Method for measuring thickness of silicon carbide crystal during crystal growth

Abstract

The application discloses a crystal thickness measurement method during silicon carbide crystal growth, and particularly relates to the technical field of silicon carbide crystal preparation, and comprises the following steps: acquiring real-time attitude data of the crystal by configuring a three-dimensional gyroscope and an array of inclination sensors, establishing an attitude dynamic model, and compensating the incident angle of a measurement path according to the attitude dynamic model; verifying and optimizing the compensation accuracy in combination with multi-source data; buffering the data in each cycle and predicting the angle deviation trend through periodic modeling, and then controlling the attitude adjustment of a crystal support platform, so as to realize dynamic angle compensation and platform adaptive control during the measurement process; the application realizes real-time angle compensation of the measurement path by constructing the attitude dynamic model of the crystal, verifies the error by fusing multi-source data, and effectively improves the precision, stability and adaptive ability of the thickness measurement in the silicon carbide crystal growth process in combination with periodic modeling prediction and platform attitude adjustment, so as to reduce systematic errors.

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