Miniature light-emitting device and manufacturing method thereof

Abstract

The invention relates to a miniature light-emitting device and a manufacturing method thereof, and the miniature light-emitting device comprises a light-emitting array structure which is provided with a plurality of sub-pixel regions; the multiple color conversion layers are located on the light emitting side of the light emitting array structure and correspond to the multiple sub-pixel areas respectively, the color conversion layers are obtained by conducting patterning treatment on the modified quantum dot photoresist layer, the modified quantum dot photoresist layer comprises quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, and the modifier is located on the light emitting side of the light emitting array structure and corresponds to the multiple sub-pixel areas. The modifier is used for forming a hydrogen bond in the quantum dot photoresist, so that the modifier in the modified quantum dot photoresist layer can form the hydrogen bond, and the cohesion of the modified quantum dot photoresist layer is improved, so that the generation of edge burrs in the patterning treatment process can be reduced, and the pattern precision of the photoresist is improved; the quantum dot color conversion layer can meet the requirement for high resolution, the quantum dot color conversion layer can be more accurately matched with the light-emitting array structure, and the display effect and performance of the device are improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, specifically to a micro light-emitting device and its fabrication method. Background Technology

[0002] Micro LED (Micro Light Emitting Diode) display technology integrates millions of tiny LED pixels onto a single chip by miniaturizing and matrixing LEDs. Each Micro LED pixel can be controlled independently, and this self-emissive characteristic gives it a significant advantage in display performance.

[0003] Quantum dots are a new type of luminescent material characterized by high luminous efficiency and narrow peak width, enabling low power consumption, high collimation emission, and small size. Utilizing the property of quantum dots to absorb blue light and efficiently emit red / green light, quantum dot materials can be combined with blue Micro LEDs to achieve full-color displays.

[0004] As the pixel size of Micro LED continues to shrink, the resolution requirements of the corresponding quantum dot layer will also increase to match the size of Micro LED. Summary of the Invention

[0005] This application provides a micro-light-emitting device and its fabrication method to solve the problem that existing quantum dot layers cannot support the high resolution of Micro LEDs.

[0006] This application provides a micro light-emitting device, which includes: a light-emitting array structure having multiple sub-pixel regions; and multiple color conversion layers disposed on the light-emitting side of the light-emitting array structure and respectively corresponding to the multiple sub-pixel regions. The color conversion layers are obtained by patterning a modified quantum dot photoresist layer, which includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, and the modifier is used to form hydrogen bonds in the quantum dot photoresist.

[0007] The modifier contains at least one functional group selected from methyl, methoxy, and carbonyl groups.

[0008] The molecular weight of the modifier is 4000-8000.

[0009] The quantum dot photoresist includes a photoresist mother liquor and quantum dots and scattering particles dispersed in the photoresist mother liquor. The photoresist mother liquor includes a photoinitiator and a resin containing epoxy or acrylic groups.

[0010] The light emitted by the light-emitting array structure in multiple sub-pixel regions is the initial color; the multiple color conversion layers include a first color conversion layer and a second color conversion layer, wherein the first color conversion layer is used to convert the light of the initial color into the light of the first target color, the second color conversion layer is used to convert the light of the initial color into the light of the second target color, and the light of the first target color, the light of the second target color, and the light of the initial color are used to synthesize white light.

[0011] The micro-light-emitting device includes: a barrier layer, which is disposed on the light-emitting side of the light-emitting array structure and has multiple light-transmitting areas, which are respectively disposed corresponding to multiple sub-pixel areas, and multiple color conversion layers are respectively located in the multiple light-transmitting areas.

[0012] The micro light-emitting device further includes: a planarization layer disposed on the light-emitting side of the light-emitting array structure and covering at least a plurality of color conversion layers, wherein the surface of the planarization layer facing away from the light-emitting array structure and the plurality of color conversion layers is a flat surface; and a light-transmitting substrate disposed on the flat surface of the planarization layer.

[0013] The light-emitting array structure has multiple light-emitting regions and non-light-emitting regions surrounding each light-emitting region, and each sub-pixel region has at least one light-emitting region; the light-emitting array structure includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode; wherein the light-emitting layer and the second semiconductor layer are located within the light-emitting region and are stacked sequentially on one side of the first semiconductor layer, and multiple color conversion layers are located on the side of the first semiconductor layer away from the light-emitting layer; the first electrode is located within the light-emitting region and is disposed on the side of the second semiconductor layer away from the light-emitting layer, and the second electrode is located within the non-light-emitting region and is disposed on the side of the first semiconductor layer away from the multiple color conversion layers.

[0014] The micro light-emitting device also includes: a driving substrate, a light-emitting array structure disposed on one side of the driving substrate, and the side of the light-emitting array structure facing away from the driving substrate is the light-emitting side of the light-emitting array structure.

[0015] This application also provides a method for fabricating a micro light-emitting device, which includes: providing a light-emitting array structure having multiple sub-pixel regions; forming a barrier layer on the light-emitting side of the light-emitting array structure, wherein the barrier layer has multiple through holes corresponding to the multiple sub-pixel regions, the through holes penetrating the barrier layer and exposing the corresponding sub-pixel regions; and forming multiple color conversion layers, wherein the multiple color conversion layers are respectively located in the multiple through holes.

[0016] The fabrication method of the micro-light-emitting device, prior to the formation of multiple color conversion layers, further includes: providing a modified quantum dot photoresist, comprising a quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, wherein the modifier is used to form hydrogen bonds in the quantum dot photoresist; and forming multiple color conversion layers, including: coating the modified quantum dot photoresist on the side of the barrier layer facing away from the light-emitting array structure to form a modified quantum dot photoresist layer, wherein the modified quantum dot photoresist layer fills the vias; and patterning the modified quantum dot photoresist layer to form multiple color conversion layers, wherein the multiple color conversion layers are respectively set corresponding to multiple sub-pixel regions.

[0017] The modified quantum dot photoresist includes: providing a quantum dot photoresist, adding a modifier to the quantum dot photoresist, stirring and mixing evenly to obtain the modified quantum dot photoresist.

[0018] The method for fabricating a micro light-emitting device after forming multiple color conversion layers further includes: forming a planarization layer on the light-emitting side of the light-emitting array structure, the planarization layer covering the barrier layer and multiple color conversion layers, and the surface of the planarization layer facing away from the light-emitting array structure, the barrier layer and the multiple color conversion layers being a planar surface; and setting a light-transmitting substrate on the planar surface of the planarization layer.

[0019] The method for fabricating a micro-light-emitting device, prior to forming a barrier layer on the light-emitting side of the light-emitting array structure, further includes: providing a temporary substrate and bonding the backlight side of the light-emitting array structure to one side of the temporary substrate to obtain a temporary bonding structure; removing the substrate of the light-emitting array structure from the temporary bonding structure; and, after setting a transparent substrate on the flat surface of the planarization layer, the method for fabricating a micro-light-emitting device further includes: removing the temporary substrate to expose the backlight side of the light-emitting array structure; bonding the exposed backlight side of the light-emitting array structure after removing the temporary substrate to one side of the driving substrate to obtain a bonding structure; and fabricating a micro-light-emitting device based on the bonding structure.

[0020] The beneficial effects of this application are as follows: The micro light-emitting device and its fabrication method provided in this application, by setting multiple color conversion layers on the light-emitting side of the light-emitting array structure corresponding to the multiple sub-pixel regions of the light-emitting array structure, and the color conversion layers are obtained by patterning a modified quantum dot photoresist layer, wherein the modified quantum dot photoresist layer includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, and the modifier is used to form hydrogen bonds in the quantum dot photoresist, thereby not only enabling color conversion of the light emitted by the light-emitting array structure in each sub-pixel region through each color conversion layer to achieve full-color display, but also improving the cohesive force of the modified quantum dot photoresist layer because the modifier in the modified quantum dot photoresist layer can form hydrogen bonds, thus reducing the generation of edge burrs during the patterning process of the modified quantum dot photoresist layer, improving the precision of the photoresist pattern, enabling the quantum dot color conversion layer to meet high resolution requirements, facilitating a more precise match between the quantum dot color conversion layer and the light-emitting array structure, and improving the display effect and performance of the device. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic cross-sectional view of the micro light-emitting device provided in the embodiments of this application;

[0023] Figure 2 This is a schematic cross-sectional view of the micro light-emitting device provided in the embodiments of this application;

[0024] Figure 3 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0025] Figure 4 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0026] Figure 5 This is a cross-sectional schematic diagram of the light-emitting array structure provided in the embodiments of this application;

[0027] Figure 6 This is another cross-sectional structural schematic diagram of the micro light-emitting device provided in the embodiments of this application;

[0028] Figure 7 This is a schematic flowchart of the fabrication method of the micro light-emitting device provided in the embodiments of this application;

[0029] Figure 8 This is a schematic diagram of the structure of the modified quantum dot photoresist layer patterned according to an embodiment of this application. Detailed Implementation

[0030] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0031] The embodiments of this application will be further described in detail below with reference to the accompanying drawings and examples. It should be particularly noted that the following embodiments are only used to illustrate the embodiments of this application and do not limit the scope of the embodiments of this application. Similarly, the following embodiments are only some embodiments of the embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the embodiments of this application.

[0032] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0033] In the following description, the connection of the second component to the first component may include embodiments in which the second component is directly connected to the first component, and may also include embodiments in which the second component is connected to the first component via an additional component, such that the second component is not directly connected to the first component.

[0034] In the following description, the connection between the second component and the first component may include embodiments in which the second component is directly connected to the first component, and may also include embodiments in which the second component is connected to the first component via an additional component, thereby preventing the second component from being directly connected to the first component.

[0035] When describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between itself and the other layer or region. Furthermore, if the component is flipped, the layer or region will be located "below" or "under" the other layer or region. Additionally, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0036] Furthermore, the directional terms mentioned in the embodiments of this application, such as [up], [down], [front], [back], [left], [right], [inner], [outer], [side], etc., are only for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding the embodiments of this application, and not for limiting the embodiments of this application. In the various drawings, structurally similar units are represented by the same reference numerals. For clarity, the various parts in the drawings are not drawn to scale. In addition, some related parts may not be shown in the drawings.

[0037] Display chips are chips with display functions. They achieve high-resolution displays through high-density integrated display units and can controllable light emission at the pixel level on a unit-by-unit basis, thereby improving the display effect of microdisplays.

[0038] Based on a comprehensive evaluation of mass production feasibility, cost, and technology, quantum dot color conversion technology has become the preferred solution for full-color Micro LEDs. It can achieve low-cost mass production (cost only slightly higher than monochrome modules) while maintaining a wide color gamut (110%–130% NTSC) and low integration difficulty, thanks to a simplified process of blue light chip + photolithographic quantum dot layer. However, three-color combining systems are limited by their large size, complex structure, and extremely high cost (approximately 7500 RMB higher than monochrome modules). Stacking solutions, on the other hand, face challenges in overcoming mass production bottlenecks due to low wafer bonding yield, red light efficiency <1% (<20μm), and concentrated heat dissipation. The inherent stability and crosstalk issues of quantum dots have been addressed through self-developed materials and packaging technology (LT95@85). ℃ (85% > 4000 hours) effectively solves this problem, making it a path that combines performance and commercial viability.

[0039] The technical route for obtaining a full-color Micro LED display module using a quantum dot color conversion scheme in an inverted chip structure can employ a Die-to-Die alignment bonding process. Die-to-Die alignment bonding refers to bonding a pre-prepared blue light chip (Die) to a quantum dot color conversion film (QDCC Die) using high-precision alignment technology to form a heterogeneous integrated structure. However, this technical route relies on bonding equipment for Die-to-Die alignment bonding, which places high demands on the precision of the bonding equipment; otherwise, it can lead to problems such as abnormal color rendering, severe optical crosstalk, and low light extraction efficiency. Moreover, when the precision of the bonding equipment cannot meet the process requirements, the pixel size in the quantum dot sheet is usually enlarged to accommodate bonding misalignment, resulting in a decrease in the pixel density, resolution, and display quality of the final color light chip. Simultaneously, due to the need to adapt to the sub-pixel distribution of the quantum dot layer, not every blue light chip can be illuminated, leading to a significant reduction in display brightness. Furthermore, the bonding adhesive required between the light chip and the quantum dot layer increases optical crosstalk and also affects the stability of the quantum dots. Furthermore, as the pixel size of Micro LED continues to shrink, the resolution requirements of the corresponding quantum dot layer will also increase to match the size of Micro LED, but existing quantum dot layers are difficult to support the high resolution of Micro LED.

[0040] To address the above problems, this application provides a micro-light-emitting device and its fabrication method. Multiple color conversion layers are formed on the light-emitting side of the light-emitting array structure, corresponding to multiple sub-pixel regions of the array structure. These color conversion layers are obtained by patterning a modified quantum dot photoresist layer. The modified quantum dot photoresist layer includes quantum dot photoresist and a modifier dispersed within it. The modifier forms hydrogen bonds within the quantum dot photoresist. This not only enables color conversion of the light emitted from each sub-pixel region by the color conversion layers, achieving full-color display, but also improves the cohesion of the modified quantum dot photoresist layer by forming hydrogen bonds. This reduces edge burrs in the patterned color conversion layers, improving the photoresist pattern accuracy and allowing the quantum dot color conversion layers to meet high-resolution requirements. This is beneficial for the integration of quantum dot color conversion layers with micro-light-emitting array structures. More precise matching of the LED light-emitting chip array improves the display effect and performance of the device. Furthermore, in this embodiment, the color conversion layer can be directly formed on the light-emitting side of the Micro LED light-emitting chip array via photolithography alignment. This eliminates the need to bond the pre-prepared blue light chip to the quantum dot color conversion film using high-precision alignment technology, thus solving the problem of poor display effect caused by low alignment accuracy of bonding equipment. This improves the display resolution sacrificed for compatibility bonding misalignment, and eliminates the need for bonding adhesive, resolving the optical crosstalk problem caused by the adhesive layer, thereby improving the display performance of the device.

[0041] The following detailed description is based on specific embodiments. It should be noted that the embodiments of this application can be presented in various forms, and some examples will be described below.

[0042] Please see Figure 1 , Figure 1 This is a cross-sectional structural diagram of the micro light-emitting device provided in the embodiments of this application. For example... Figure 1 As shown, the micro light-emitting device 1 includes a light-emitting array structure 10 and multiple color conversion layers 22A / 22B. The light-emitting array structure 10 has multiple sub-pixel regions P1 / P2 / P3. The multiple color conversion layers 22A / 22B are disposed on the light-emitting side of the light-emitting array structure 10 and are respectively disposed corresponding to the multiple sub-pixel regions P1 / P2 / P3. Each color conversion layer 22A / 22B can perform color conversion on the light emitted by the light-emitting array structure 10 within its corresponding sub-pixel region P1 / P2 / P3 to achieve full-color display.

[0043] Furthermore, each color conversion layer 22A / 22B is obtained by patterning a modified quantum dot photoresist layer, wherein the modified quantum dot photoresist layer includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, and the modifier is used to form hydrogen bonds in the quantum dot photoresist.

[0044] Specifically, patterning can be achieved using photolithography, which includes steps such as exposure and development. In the exposure step, a photomask can be used to selectively expose the modified quantum dot photoresist layer, causing a chemical reaction in the exposed areas, making the modified quantum dot photoresist layer less soluble. In the development step, a developer is used to remove the modified quantum dot photoresist layer from the unexposed areas, resulting in color conversion layers 22A / 22B corresponding to the pattern on the photomask. Furthermore, it should be noted that because the modifier in the modified quantum dot photoresist layer can form hydrogen bonds, it increases the cohesive force of the modified quantum dot photoresist, thus reducing edge burrs during patterning. This improves the pattern accuracy of the color conversion layers 22A / 22B obtained by patterning the modified quantum dot photoresist layer, allowing the color conversion layers 22A / 22B to meet high-resolution requirements. This, in turn, facilitates more precise matching between the quantum dot color conversion layers and the Micro LED light-emitting chip array, improving the display effect and performance of the device.

[0045] In some examples, the modified quantum dot photoresist layer may include a photoresist masterbatch and quantum dots and scattering particles dispersed in the masterbatch. The masterbatch may include a photoinitiator and a resin containing epoxy or acrylic groups. Specifically, the quantum dot photoresist may also include a solvent for diluting the masterbatch, thereby better dispersing the quantum dots, scattering particles, and modifiers within the masterbatch, thus improving the uniformity and stability of the modified quantum dot photoresist. Furthermore, the addition of the solvent can adjust the viscosity of the modified quantum dot photoresist, making it more suitable for coating and patterning processes.

[0046] In practical implementation, the aforementioned modifier can be a substance capable of forming hydrogen bonds with components in the quantum dot photoresist (such as resin, photoinitiator, solvent, etc.), for example, a compound containing at least one of the functional groups such as methyl (-CH3), methoxy (-OCH3), hydroxyl (-OH), carboxyl (-COOH), and amino (-NH2). These functional groups can form hydrogen bonds with corresponding groups in the quantum dot photoresist, thereby improving the cohesiveness of the modified quantum dot photoresist and reducing the generation of edge burrs during the patterning process.

[0047] In some embodiments, the modified quantum dot photoresist layer may include a photoresist mother liquor, quantum dots, scattering particles, and a solvent. The photoresist mother liquor includes a photoinitiator and a resin containing epoxy or acrylic groups, and the solvent may specifically be propylene glycol methyl ether acetate (PGMEA). The modifier may contain at least one functional group such as methyl (-CH3), methoxy (-OCH3), and carbonyl (C=O), for example, it may specifically be a compound containing methyl (-CH3), methoxy (-OCH3), and carbonyl (C=O). Thus, because the methoxy and carbonyl groups in the chemical structure of the modifier have similar chemical properties to the photoresist mother liquor and / or solvent in the quantum dot photoresist, it is beneficial for the modifier to be uniformly dispersed in the quantum dot photoresist. Meanwhile, because the methyl and methoxy groups in the chemical structure of the modifier can generate a large number of hydrogen bonds in the quantum dot photoresist, when the modified quantum dot photoresist is spin-coated and pre-baked to pre-cur it, the distance between the active components in the entire colloid can be shortened, making the photochemical reaction easier to occur. This reduces the exposure dose required for the exposure step in the patterning process, thus improving the problem of reduced photoresist pattern accuracy caused by the scattering of the exposure light (e.g., ultraviolet light) by the scattering particles in the quantum dot photoresist. It can also reduce burrs during exposure, making the edges of the reactive and unreacted areas more obvious, improving the edge clarity and resolution of the patterned modified quantum dot photoresist layer (i.e., color conversion layer 22A / 22B), and enhancing the display effect and performance of the micro light-emitting device 1.

[0048] Specifically, the proportion of modifier added to the modified quantum dot photoresist layer can be adjusted according to the specific formulation and performance requirements of the quantum dot photoresist. It is understood that the proportion of modifier added should be appropriate to avoid insufficient hydrogen bonding due to insufficient addition, while excessive addition may affect the photochemical reaction characteristics of the quantum dot photoresist or increase costs. Furthermore, by precisely controlling the type and amount of modifier, its process adaptability can be significantly optimized without affecting the original performance of the quantum dot photoresist, thus providing reliable support for the manufacture of high-resolution display devices. In practice, the method of adding the modifier can also be flexibly adjusted. For example, it can be added directly to the quantum dot photoresist or photoresist mother liquor, or premixed with quantum dots and scattering particles before mixing with the photoresist mother liquor. Different addition methods have a certain impact on the dispersion effect and function of the modifier in the photoresist system. Therefore, in practice, the optimal mixing sequence and method can be selected according to process requirements to ensure that the modifier can play its full role, while avoiding material performance deviations or process failures caused by improper mixing. Through this series of optimization measures, the overall performance of the modified quantum dot photoresist can be further improved, making it more suitable for the manufacturing requirements of high-precision and high-efficiency display devices. In actual production, the chemical stability of the modifier and its compatibility with the photoresist system are key factors in ensuring its effectiveness. To ensure that the modifier plays a stable role in the photoresist system for a long time, the modifier needs to have good thermal stability and chemical inertness to avoid degradation or side reactions during the storage or use of the photoresist, thereby affecting the performance stability of the photoresist.

[0049] In some specific embodiments, the molecular weight of the aforementioned modifier can be 4000-8000. Specifically, the modifier can be a polymer compound containing at least one of the functional groups such as methyl, methoxy, and carbonyl, and the molecular weight of the polymer compound can be 4000-8000. Thus, by selecting a polymer compound as the modifier, the modifier can contain a large amount of methyl, methoxy, and carbonyl groups, thereby enabling the modifier to generate more hydrogen bonds in the quantum dot photoresist, further enhancing the cohesion of the modified quantum dot photoresist layer, reducing edge burrs during patterning, and improving the pattern accuracy of the color conversion layers 22A / 22B. Simultaneously, the polymer compound as a modifier also has better thermal stability and chemical inertness, enabling it to function stably in the photoresist system for a long time, ensuring the performance stability of the photoresist. Furthermore, the polymer compound as a modifier has good transmittance to exposure light sources such as ultraviolet light, and will not interfere with the photochemical reaction during the photolithography process, ensuring the high precision of the photoresist pattern. In practical implementation, appropriate polymer compounds can be selected as modifiers according to the specific formulation and performance requirements of quantum dot photoresists. By precisely controlling their type and dosage, the process adaptability and overall performance of the modified quantum dot photoresists can be optimized.

[0050] In this embodiment, as Figure 1 As shown, the plurality of sub-pixel regions P1 / P2 / P3 in the light-emitting array structure 10 may include a plurality of first sub-pixel regions P1, a plurality of second sub-pixel regions P2, and a plurality of third sub-pixel regions P3. Correspondingly, the plurality of color conversion layers 22A / 22B / 23C may include a plurality of first color conversion layers 22A and a plurality of second color conversion layers 22B. Furthermore, the plurality of first color conversion layers 22A are respectively disposed corresponding to the plurality of first sub-pixel regions P1, and the plurality of second color conversion layers 22B are respectively disposed corresponding to the plurality of second sub-pixel regions P2.

[0051] It is understood that in the micro-light-emitting device 1, the light-emitting array structure 10 in each sub-pixel region P1 / P2 / P3 can correspond to a sub-pixel in the micro-light-emitting device 1. Specifically, in the micro-light-emitting device 1, the light-emitting array structure 10 in each first sub-pixel region P1 can correspond to a first sub-pixel in the micro-light-emitting device 1, the light-emitting array structure 10 in each second sub-pixel region P2 can correspond to a second sub-pixel in the micro-light-emitting device 1, and the light-emitting array structure 10 in each third sub-pixel region P3 can correspond to a third sub-pixel in the micro-light-emitting device 1.

[0052] In this embodiment, for each first color conversion layer 22A, the first color conversion layer 22A can be configured to convert the light emitted by the light-emitting array structure 10 in the first sub-pixel region P1 corresponding to the first color conversion layer 22A into light of a first target color. For each second color conversion layer 22B, the second color conversion layer 22B can be configured to convert the light emitted by the light-emitting array structure 10 in the second sub-pixel region P2 corresponding to the second color conversion layer 22B into light of a second target color, and the second target color is different from the first target color.

[0053] Specifically, the light emission colors of the light-emitting array structures 10 within the multiple sub-pixel regions P1 / P2 / P3 can be the same, and all can be the initial colors. In other words, the light emission colors of the light-emitting array structures 10 within the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 can all be the initial colors. For example, the light emitted by the light-emitting array structures 10 within the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 can all be blue light or ultraviolet light; that is, the initial colors can be blue or colorless.

[0054] Specifically, the aforementioned plurality of first color conversion layers 22A correspond one-to-one with the aforementioned plurality of first sub-pixel regions P1. Furthermore, each first color conversion layer 22A can cover the light-emitting side of the light-emitting array structure 10 within its corresponding first sub-pixel region P1, so that when the light-emitting array structure 10 within the first sub-pixel region P1 emits light, the light emitted by the light-emitting array structure 10 within the first sub-pixel region P1 can be converted into light of the first target color, and the initial color is different from the first target color.

[0055] Specifically, the aforementioned plurality of second color conversion layers 22B correspond one-to-one with the aforementioned plurality of second sub-pixel regions P2. Furthermore, each second color conversion layer 22B can cover the light-emitting side of the light-emitting array structure 10 within its corresponding second sub-pixel region P2, so that when the light-emitting array structure 10 within the second sub-pixel region P2 emits light, the light emitted by the light-emitting array structure 10 within the second sub-pixel region P2 can be converted into light of a second target color, and the initial color is different from the second target color.

[0056] In some embodiments, the light of the initial color, the light of the first target color, and the light of the second target color can be combined to form white light. For example, the initial color can be blue, the first target color can be red, and the second target color can be green. The first color conversion layer 22A can be obtained by patterning a modified red quantum dot photoresist layer, and the material of the second color conversion layer 22B can be obtained by patterning a modified green quantum dot photoresist layer.

[0057] In other embodiments, such as Figure 2 As shown, the aforementioned multiple color conversion layers 22A / 22B / 23C may further include multiple third color conversion layers 22C, which are respectively configured to correspond to the aforementioned multiple third sub-pixel regions P3. Furthermore, for each third color conversion layer 22C, the third color conversion layer 22C can be configured to convert the light emitted by the light-emitting array structure 10 within the third sub-pixel region P3 corresponding to the third color conversion layer 22C into light of a third target color. The initial color is different from the third target color, and the light of the third target color, the light of the first target color, and the light of the second target color can be combined to form white light.

[0058] Specifically, the aforementioned plurality of third color conversion layers 22C correspond one-to-one with the aforementioned plurality of third sub-pixel regions P3. Furthermore, each third color conversion layer 22C can cover the light-emitting side of the light-emitting array structure 10 within its corresponding third sub-pixel region P3, so that when the light-emitting array structure 10 within the third sub-pixel region P3 emits light, the light of the initial color emitted by the light-emitting array structure 10 within the third sub-pixel region P3 can be converted into light of the third target color.

[0059] Thus, by using different color conversion layers 22A / 22B / 22C to convert the emitted light of the same color sub-pixel into emitted light of multiple different colors, the full-color display of the aforementioned micro-light-emitting device 1 can be achieved.

[0060] For example, the light of the initial color can be ultraviolet light, the light of the first target color can be red light, the light of the second target color can be green light, and the light of the third target color can be blue light. The first color conversion layer 22A can be obtained by patterning the modified red quantum dot photoresist layer, the second color conversion layer 22B can be obtained by patterning the modified green quantum dot photoresist layer, and the third color conversion layer 22C can be obtained by patterning the modified blue quantum dot photoresist layer.

[0061] Furthermore, it should be noted that the aforementioned modified red quantum dot photoresist layer, modified green quantum dot photoresist layer, and modified blue quantum dot photoresist layer are all modified quantum dot photoresist layers, and the main difference between them lies in the type of quantum dots used to form the modified quantum dot photoresist layer. For example, the quantum dots in the modified red quantum dot photoresist layer are red quantum dots that emit red light, the quantum dots in the modified green quantum dot photoresist layer are green quantum dots that emit green light, and the quantum dots in the modified blue quantum dot photoresist layer are blue quantum dots that emit blue light. Thus, by patterning the modified quantum dot photoresist layers with different emission colors to obtain color conversion layers 22A / 22B / 22C with different emission colors, the pattern accuracy of the color conversion layers 22A / 22B / 22C with different emission colors can be improved, thereby achieving higher precision color performance and clearer display effects.

[0062] In the above embodiments, such as Figure 1 and Figure 2 As shown, the aforementioned micro-light-emitting device 1 may further include a barrier layer 21, which is disposed on the light-emitting side of the light-emitting array structure 10 and may have multiple light-transmitting areas, which are respectively disposed corresponding to the aforementioned multiple sub-pixel areas P1 / P2 / P3. Furthermore, the light emitted by the light-emitting array structure 10 in each sub-pixel area P1 / P2 / P3 is emitted through its corresponding light-transmitting area, and each color conversion layer 22A / 22B / 22C corresponds to one light-transmitting area and may be disposed within its corresponding light-transmitting area.

[0063] Specifically, in the aforementioned micro-light-emitting device 1, the plurality of light-transmitting areas correspond one-to-one with the plurality of sub-pixel areas P1 / P2 / P3. Furthermore, for each light-transmitting area, the light-transmitting area can be located directly above the corresponding sub-pixel area P1 / P2 / P3, and the orthogonal projection of the light-transmitting area on the light-emitting array structure 10 can completely cover the corresponding sub-pixel area P1 / P2 / P3, so that the light emitted by the light-emitting array structure 10 within the sub-pixel areas P1 / P2 / P3 can be emitted from the light-transmitting area as much as possible, thereby improving the light extraction efficiency of the aforementioned micro-light-emitting device 1.

[0064] Specifically, the aforementioned barrier layer 21 may also have a light-blocking area surrounding each light-transmitting area. Furthermore, during the use of the aforementioned micro-light-emitting device 1, the light emitted by the light-emitting array structure 10 within each sub-pixel area P1 / P2 / P3 that is incident on its corresponding light-transmitting area will exit from its corresponding light-transmitting area, while the light emitted by the light-emitting array structure 10 within each sub-pixel area P1 / P2 / P3 that is incident on the light-blocking area will be absorbed by the light-blocking area. Therefore, when the micro-light-emitting device 1 is applied in the display field, it can significantly reduce optical crosstalk between sub-pixels, thereby improving the display effect of the corresponding product (e.g., a display terminal device).

[0065] In some specific embodiments, such as Figure 1 and Figure 2 As shown, the aforementioned barrier layer 21 is provided with multiple through holes 23A / 23B / 23C. These multiple through holes 23A / 23B / 23C are respectively arranged corresponding to the aforementioned multiple sub-pixel areas P1 / P2 / P3. The area where each through hole 23A / 23B / 23C is located on the barrier layer 21 is a light-transmitting area, and the remaining area of ​​the barrier layer 21 excluding the area where the multiple through holes 23A / 23B / 23C are located is the aforementioned light-blocking area. Specifically, the aforementioned multiple color conversion layers 22A / 22B / 23C are respectively located in the multiple through holes 23A / 23B / 23C. Furthermore, each through hole 23A / 23B / 23C corresponds to a sub-pixel area P0 and is opposite to its corresponding sub-pixel area P0, thereby ensuring that the light emitted by the light-emitting array structure 10 in each sub-pixel area P1 / P2 / P3 can be emitted through its corresponding through hole 23A / 23B / 23C.

[0066] Specifically, such as Figure 1 and Figure 2 As shown, the aforementioned plurality of through holes 23A / 23B / 23C may include a plurality of first through holes 23A, a plurality of second through holes 23B, and a plurality of third through holes 23C. Furthermore, each first through hole 23A is opposite to a corresponding first sub-pixel region P1, each second through hole 23B is opposite to a corresponding second sub-pixel region P2, and each third through hole 23C is opposite to a corresponding third sub-pixel region P3. Specifically, the plurality of first through holes 23A can correspond one-to-one with the plurality of first sub-pixel regions P1, the plurality of second through holes 23B can correspond one-to-one with the plurality of second sub-pixel regions P2, and the plurality of third through holes 23C can correspond one-to-one with the plurality of third sub-pixel regions P3.

[0067] Specifically, such as Figure 1 and Figure 2As shown, in the above embodiment where the plurality of color conversion layers 22A / 22B / 23C include a plurality of first color conversion layers 22A and a plurality of second color conversion layers 22B, the plurality of first color conversion layers 22A can be respectively located in the plurality of first through holes 23A, and the plurality of second color conversion layers 22B can be respectively located in the plurality of second through holes 23B. Furthermore, the plurality of first color conversion layers 22A and the plurality of first through holes 23A can correspond one-to-one, and the plurality of second color conversion layers 22B and the plurality of second through holes 23B can correspond one-to-one, with each first color conversion layer 22A located in its corresponding first through hole 23A and each second color conversion layer 22B located in its corresponding second through hole 23B.

[0068] Specifically, such as Figure 2 As shown, in the above embodiment where the plurality of color conversion layers 22A / 22B / 23C further includes a plurality of third color conversion layers 22C, the plurality of third color conversion layers 22A can be respectively located in the plurality of third vias 23C. Furthermore, the plurality of third color conversion layers 22C and the plurality of third vias 23C can correspond one-to-one, and each third color conversion layer 22C can be located in its corresponding third via 23C.

[0069] In some examples, the material of the aforementioned barrier layer 21 may include, but is not limited to, highly reflective metals such as silver or aluminum. For example, the barrier layer 21 may specifically be a silver foil layer or an aluminum foil layer. It is understood that, compared to barrier layers formed by black photoresist, which suffer from high light absorption and severe light energy loss, the barrier layer 21 in this embodiment is formed by perforating a high-reflectivity metal foil. The perforation wall has high reflectivity and low light absorption, which can improve the utilization rate of the light emitted by the light-emitting array structure 10 in each sub-pixel region P1 / P2 / P3, thereby improving luminous efficiency and reducing power consumption.

[0070] In the above embodiments, such as Figure 1 and Figure 2 As shown, the aforementioned micro-light-emitting device 1 may further include a planarization layer 24, which is disposed on the light-emitting side of the light-emitting array structure 10 and at least covers the aforementioned plurality of color conversion layers 22A / 22B / 22C. Specifically, in the aforementioned embodiment where the micro-light-emitting device 1 further includes a barrier layer 23, as shown... Figure 1 and Figure 2 As shown, the flat layer 24 can also cover the retaining wall layer 23.

[0071] Specifically, the surface of the planarization layer 24 facing away from the light-emitting array structure 10 and the plurality of color conversion layers 22A / 22B / 22C can be a flat surface, so that the planarization layer 24 can achieve a planarization effect, thereby providing a good processing foundation for subsequent processes and helping to improve the overall flatness and display uniformity of the device. In addition, the planarization layer 24 also plays a protective role, preventing the color conversion layers 22A / 22B / 22C and the barrier layer 23 from being damaged or contaminated in subsequent processes, thereby improving the stability and reliability of the device.

[0072] In some examples, the planarization layer 24 can be made of a light-transmitting material, such as transparent organic materials like epoxy resin, polyacrylate, polycarbonate, polyethylene terephthalate, or polyimide, or inorganic transparent materials like silicon dioxide or silicon nitride, to ensure that light can pass through the planarization layer 24 without attenuation. Furthermore, the thickness of the planarization layer 24 can be adjusted according to actual needs to balance planarization effect with material stress control, thereby further improving the performance and reliability of the micro-light-emitting device 1.

[0073] In some specific embodiments, such as Figure 3 As shown, the aforementioned micro light-emitting device 1 may also include multiple attenuation filter layers 26, which are respectively located in the multiple third through holes 23C, thereby enabling the light emitted by the light-emitting array structure 10 in the third sub-pixel region P3 to be attenuated by the corresponding attenuation filter layer 26 before being emitted.

[0074] The material of the attenuation filter layer 26 can be selected from materials that can partially absorb the light emitted by the light-emitting array structure 10 in the third sub-pixel area P3. For example, materials that can partially absorb blue light can be selected to achieve light intensity attenuation, thereby reducing the difference between the brightness of the light in the third sub-pixel area P3 after color conversion and the brightness of the light in the first sub-pixel area P1 and the second sub-pixel area P2 after color conversion. This further balances the brightness uniformity of the overall display screen, ensuring that the light from each sub-pixel area P1 / P2 / P3 can be blended with a more balanced light intensity ratio when finally synthesizing white light after color conversion. This eliminates visual defects caused by uneven brightness, making every detail of the screen present a delicate and harmonious color performance, and comprehensively improving the sense of layering and realism of the display effect.

[0075] Furthermore, in practical implementation, the material, thickness, and other parameters of the attenuation filter layer 26 can be adjusted according to actual needs to achieve the ideal light attenuation effect, thereby achieving the purpose of white balance control. In some examples, the material of the aforementioned attenuation filter layer 26 can be a material that can transmit red and green light but partially transmit blue light; for example, it can be a yellow filter material.

[0076] In some specific embodiments, such as Figure 4 As shown, the aforementioned flattening layer 24 can be an attenuation filter flattening layer 27, thereby enabling the light emitted by the light-emitting array structure 10 in each sub-pixel region P1 / P2 / P3 to undergo color conversion through the corresponding color conversion layers 22A / 22B, and then be attenuated by the attenuation filter flattening layer 27 before being emitted.

[0077] The attenuation filter flattening layer 27 can be made of a material capable of partially absorbing the light emitted by the light-emitting array structure 10 within the sub-pixel regions P1 / P2 / P3. For example, a material capable of partially absorbing blue light can be used. This reduces the amount of initial color light contained in the light from each sub-pixel region P1 / P2 / P3 after color conversion, such as reducing the blue light component. Consequently, it can visually eliminate the color imbalance caused by an excessive initial color light component, resulting in a more natural and softer color performance and improved visual comfort. In addition, the attenuation filter flattening layer 27 also has a flattening function, which can effectively improve the light scattering problem caused by the unevenness of the surface of the color conversion layers 22A / 22B, thereby improving the stability and consistency of light propagation and providing higher clarity and more delicate layering for the image presentation.

[0078] Furthermore, in practical implementation, the material, thickness, and other parameters of the attenuation filter flattening layer 27 can be adjusted according to actual needs to achieve the ideal light attenuation effect. This results in each sub-pixel area P1 / P2 / P3 having a more balanced brightness performance in the final image, ensuring a delicate and natural picture, and further enhancing the image quality performance of the display device in high-resolution and high-brightness application scenarios. In some examples, the material of the aforementioned attenuation filter flattening layer 27 can be a material that can transmit red and green light but partially transmit blue light; for example, it can be a yellow filter material.

[0079] In some specific embodiments, such as Figures 1 to 4 As shown, the aforementioned micro-light-emitting device 1 may further include a light-transmitting substrate 30, which is disposed on the flat surface of the planarization layer 24 and serves to support the film structure located thereon. Furthermore, the light-transmitting substrate 30 can also protect the internal components of the micro-light-emitting device 1. Exemplarily, the light-transmitting substrate 30 may include any suitable substrate such as a glass substrate, a polyimide substrate, or a sapphire substrate.

[0080] Specifically, such as Figures 1 to 4 As shown, the aforementioned micro light-emitting device 1 may further include an adhesive layer (not shown in the figure), which is located between the planarization layer 24 and the light-transmitting substrate 30, and connects the planarization layer 24 and the light-transmitting substrate 30 together.

[0081] The adhesive layer serves both to bond and transmit light. In some examples, the adhesive layer can be made of a low-gloss material, such as optical adhesive or a mixture thereof.

[0082] In the above embodiments, such as Figure 5 As shown, the above-mentioned light-emitting array structure 10 may include a plurality of light-emitting units 100, and in the above-mentioned light-emitting array structure 10, each sub-pixel region P1 / P2 / P3 may have one or more light-emitting units 100.

[0083] Specifically, such as Figure 5 As shown, the aforementioned light-emitting array structure 10 may have multiple light-emitting regions C1, which are spaced apart. Specifically, the multiple light-emitting regions C1 may be arranged in an array to form a light-emitting region array. Furthermore, the aforementioned light-emitting structure 11 may also have non-light-emitting regions C2, which may include a spacing region C21 and a peripheral region C22. The spacing region C21 is the interval between the multiple light-emitting regions C1, used to separate each light-emitting region C1 from other light-emitting regions C1 located around it. The peripheral region C22 is the area surrounding the multiple light-emitting regions C1.

[0084] It is understood that in the aforementioned micro-light-emitting device 1, the light-emitting array structure 10 within each light-emitting region C1 can correspond to a light-emitting unit 100, and this light-emitting unit 100 can be a light-emitting diode, specifically a micro-light-emitting diode (Micro-LED). In some examples, such as... Figure 6 As shown, each sub-pixel region P1 / P2 / P3 of the above-mentioned light-emitting array structure 10 can correspond to a light-emitting region C1 of the light-emitting array structure 10, thereby enabling each light-emitting region C1 of the light-emitting array structure 10 to correspond to a sub-pixel, which is beneficial to improving display resolution and pixel density.

[0085] Specifically, such as Figure 5 As shown, the aforementioned light-emitting array structure 10 may include a light-emitting structure 11, which may include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. The light-emitting layer 112 and the second semiconductor layer 113 are located within the light-emitting region C1 and are sequentially stacked on one side of the first semiconductor layer 111. Furthermore, the light-emitting side of the aforementioned light-emitting array structure 10 may specifically be the light-emitting side of the light-emitting structure 11, and the aforementioned plurality of color conversion layers 22A / 22B / 22C may specifically be located on the side of the first semiconductor layer 111 facing away from the light-emitting layer 112.

[0086] The light-emitting layer 112 can be a quantum well layer, such as an indium gallium nitride (IGaN) quantum well layer, or an IGaN / GaN multi-quantum well layer. The first semiconductor layer 111 and the second semiconductor layer 113 have different polarities. Specifically, the first semiconductor layer 111 can be either an N-type semiconductor layer or a P-type semiconductor layer, and the second semiconductor layer 113 can be either an N-type semiconductor layer or a P-type semiconductor layer. The N-type semiconductor layer can be specifically an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer can be specifically a P-type gallium nitride layer or a P-type aluminum gallium nitride layer.

[0087] In some specific embodiments, the light-emitting structure 11 may further include a buffer layer (not shown in the figure), the buffer layer is located on the side of the first semiconductor layer 111 away from the light-emitting layer 112, and the plurality of color conversion layers 22A / 22B / 22C may be specifically located on the side of the buffer layer away from the first semiconductor layer 111.

[0088] Specifically, the light-emitting structure 11 may further include a first substrate (not shown in the figure), the first substrate being located on the side of the buffer layer away from the first semiconductor layer 111, and the plurality of color conversion layers 22A / 22B / 22C may be specifically located on the side of the first substrate away from the buffer layer.

[0089] The first substrate serves to support the film structure located thereon. The buffer layer can alleviate the stress between the first semiconductor layer 111 and the first substrate caused by lattice mismatch and thermal expansion coefficient mismatch.

[0090] In some examples, the first substrate can be a sapphire substrate, a silicon substrate, or a silicon carbide substrate, etc. The material of the buffer layer can include buffer materials such as silicon nitride, silicon oxide, gallium nitride, or aluminum nitride. For example, the buffer layer can specifically be an unintentionally doped gallium nitride (U-GaN) layer.

[0091] It should be noted that, compared to the scheme in which the multiple color conversion layers 22A / 22B / 22C are specifically located on the side of the first substrate away from the buffer layer, and the scheme in which the multiple color conversion layers 22A / 22B / 22C are specifically located on the side of the buffer layer away from the first semiconductor layer 111, the scheme in which the multiple color conversion layers 22A / 22B / 22C are specifically located on the side of the first semiconductor layer 111 away from the light-emitting layer 112 makes the multiple color conversion layers 22A / 22B / 22C closer to the light-emitting layer 112 in the light-emitting structure 11. This can improve the color conversion efficiency of the multiple color conversion layers 22A / 22B / 22C for the light emitted by the light-emitting layer 112, and shorten the propagation path of light between the multiple color conversion layers 22A / 22B / 22C and the light-emitting structure 11, reduce light loss, and improve the luminous efficiency and display effect of the micro light-emitting device 1.

[0092] In some specific embodiments, such as Figure 5 As shown, the light-emitting structure 11 may further include a first electrode 115 and a second electrode 116. The first electrode 115 is located in the light-emitting region C1 and is disposed on the side of the second semiconductor layer 113 away from the light-emitting layer 112. The second electrode 116 is located in the non-light-emitting region C2, for example, it may be specifically located in the peripheral region C22 of the non-light-emitting region C2.

[0093] In some embodiments, such as Figure 5 As shown, the light-emitting structure 11 may further include a current diffusion layer 114, which is located in the light-emitting region C1 and disposed between the first electrode 115 and the second semiconductor layer 113. The current diffusion layer 114 can extend and distribute the current to the second semiconductor layer 113 (e.g., a P-type gallium nitride layer), thereby improving the light-emitting efficiency of the light-emitting layer 112.

[0094] Furthermore, in a specific implementation, the current diffusion layer 114 can be fabricated by depositing multiple layers of metal (e.g., titanium Ti, aluminum Al, gold Au, platinum Pt or nickel Ni) or semiconductor oxide (e.g., indium tin oxide ITO or zinc oxide ZnO) on the surface of the second semiconductor layer 113 away from the light-emitting layer 112 to form a current conduction.

[0095] In some embodiments, such as Figure 5 As shown, the light-emitting structure 11 may also include a passivation layer 117, which covers the light-emitting structure 11 to effectively block external water and oxygen from corroding the light-emitting structure 11, thereby improving product reliability.

[0096] Furthermore, in the above-described embodiment where the light-emitting structure 11 further includes a current diffusion layer 114, such as... Figure 5 As shown, the passivation layer 117 can also cover the current diffusion layer 114 to effectively block external water and oxygen from corroding the current diffusion layer 114, thereby improving product reliability.

[0097] Specifically, such as Figure 5 As shown, the first electrode 115 may include a first electrode layer 1151, a first conductive structure 1152, and a first bonding electrode 1153 sequentially stacked in a direction away from the second semiconductor layer 113. The second electrode 116 may include a second electrode layer 1161, a second conductive structure 1162, and a second bonding electrode 1163 sequentially stacked in a direction away from the first semiconductor layer 111. Furthermore, the passivation layer 117 may cover the first electrode layer 1151 and the second electrode layer 1161 to effectively prevent external water and oxygen from eroding the first electrode layer 1151 and the second electrode layer 1161, thereby improving product reliability.

[0098] Specifically, the first bonding electrode 1153 can be disposed on the side of the passivation layer 117 opposite to the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161, corresponding to the region of the first electrode layer 1151. The first conductive structure 1152 can be located between the first bonding electrode 1153 and the first electrode layer 1151, and penetrate through the film structure (e.g., the passivation layer 117) located between the first bonding electrode 1153 and the first electrode layer 1151. Furthermore, the two opposite ends of the first conductive structure 1152 in the longitudinal Z direction can be electrically connected to the first bonding electrode 1153 and the first electrode layer 1151, respectively, thereby realizing the electrical connection between the first bonding electrode 1153 and the first electrode layer 1151.

[0099] Specifically, the second bonding electrode 1163 can be disposed on the side of the passivation layer 117 opposite to the light-emitting structure 11, the first electrode layer 1151, and the second electrode layer 1161, corresponding to the region of the second electrode layer 1161. The second conductive structure 1162 can be located between the second bonding electrode 1163 and the second electrode layer 1161, and penetrate through the film structure (e.g., the passivation layer 117) located between the second bonding electrode 1163 and the second electrode layer 1161. Furthermore, the two opposite ends of the second conductive structure 1162 in the longitudinal Z direction can be electrically connected to the second bonding electrode 1163 and the second electrode layer 1161, respectively, thereby realizing the electrical connection between the second bonding electrode 1163 and the second electrode layer 1161.

[0100] In some specific embodiments, in the above-described light-emitting structure 11, the first semiconductor layer 111 can be an N-type semiconductor layer, and the second semiconductor layer 113 can be a P-type semiconductor layer. Correspondingly, the first electrode 115 can be a P-type electrode electrically connected to the P-type semiconductor layer, and the second electrode 116 can be an N-type electrode electrically connected to the N-type semiconductor layer, thereby enabling all light-emitting units 100 in the above-described light-emitting array structure 10 to share the same N-type electrode and each have an independent P-type electrode.

[0101] In other specific embodiments, in the above-described light-emitting structure 11, the first semiconductor layer 111 can be a P-type semiconductor layer, and the second semiconductor layer 113 can be an N-type semiconductor layer. Correspondingly, the first electrode 115 can be an N-type electrode electrically connected to the N-type semiconductor layer, and the second electrode 116 can be a P-type electrode electrically connected to the P-type semiconductor layer, thereby enabling all light-emitting units 100 in the above-described light-emitting array structure 10 to share the same P-type electrode and each have an independent N-type electrode.

[0102] In some examples, the second electrode 116 may be annular, and its orthogonal projection on the first semiconductor layer 111 may surround the orthogonal projections of all the first electrodes 115 on the first semiconductor layer 111 to reduce the contact resistance of the second electrode 116.

[0103] In some examples, the material of the first electrode layer 1151 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). The material of the second electrode layer 1161 may also include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first electrode layer 1151 and the second electrode layer 1161 may be made of the same material and may be formed simultaneously.

[0104] In some examples, the material of the first conductive structure 1152 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Similarly, the material of the second conductive structure 1162 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first conductive structure 1152 and the second conductive structure 1162 may be made of the same material and may be formed simultaneously.

[0105] In some examples, the material of the first bonding electrode 1153 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu); and the material of the second bonding electrode 1163 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu). Furthermore, in specific implementations, the first bonding electrode 1153 and the second bonding electrode 1163 may be made of the same material and may be formed simultaneously.

[0106] In some examples, the material of the passivation layer 117 may include at least one of insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0107] In the above embodiments, such as Figure 5 As shown, the above-mentioned light-emitting array structure 10 may further include a driving substrate 12, and in the light-emitting array structure 10, the light-emitting structure 11 is disposed on one side of the driving substrate 12. The side of the light-emitting structure 11 away from the driving substrate 12 can be the light-emitting side of the light-emitting structure 11, and the side of the light-emitting structure 11 facing the driving substrate 12 can be the backlight side of the light-emitting structure 11.

[0108] Specifically, in the above-described embodiment where the light-emitting structure 11 further includes a first electrode 115 and a second electrode 116, such as... Figure 5 As shown, the light-emitting structure 11 can be bonded to the driving substrate 12 through the first electrode 115 and the second electrode 116.

[0109] In some specific embodiments, the driving substrate 12 may include a driving circuit layer 121, a first driving electrode 122, and a second driving electrode 123. The driving circuit layer 121 includes a driving circuit, and the first driving electrode 122 and the second driving electrode 123 are disposed on the same side of the driving circuit layer 121 and are both electrically connected to the driving circuit.

[0110] Furthermore, in a specific implementation, the first electrode 115 of the light-emitting structure 11 can be bonded to the first driving electrode 122 of the driving substrate 12, and the second electrode 116 of the light-emitting structure 11 can be bonded to the second driving electrode 123 of the driving substrate 12, so as to realize the electrical connection between the light-emitting structure 11 and the driving substrate 12, thereby enabling the driving substrate 12 to drive the light-emitting structure 11 to emit light, so as to realize the display function of the micro light-emitting device 1.

[0111] Specifically, the light-emitting array structure 10 may also include a bottom filler (not shown in the figure). The bottom filler is located between the light-emitting structure 11 and the driving substrate 12 and fills the gap between the light-emitting structure 11 and the driving substrate 12 to enhance the bonding strength between the light-emitting structure 11 and the driving substrate 12, thereby improving the reliability of the product.

[0112] In some examples, the aforementioned underfill adhesive can be obtained by filling the gap between the light-emitting structure 11 and the driving substrate 12 with an adhesive (e.g., epoxy resin adhesive) through an underfill process after bonding the light-emitting structure 11 to the driving substrate 12, and then curing the adhesive filled between the light-emitting structure 11 and the driving substrate 12.

[0113] In some examples, the aforementioned driving substrate 12 may be a driving chip or a driving wafer.

[0114] In some examples, the material of the first driving electrode 122 may include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). The material of the second driving electrode 123 may also include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). Furthermore, in specific implementations, the first driving electrode 122 and the second driving electrode 123 may be made of different materials and may be formed simultaneously.

[0115] In this embodiment, the aforementioned micro-light-emitting device 1 can be applied to flexible electronic devices to realize technologies such as Augmented Reality (AR), Virtual Reality (VR), Extended Reality (XR), and Mixed Reality (MR). In some examples, the aforementioned micro-light-emitting device 1 can be the projection part of an electronic device, such as a projector or a head-up display (HUD). In other examples, the aforementioned micro-light-emitting device 1 can also be the display part of an electronic device, such as a smartphone, smartwatch, laptop, tablet, dashcam, navigator, head-mounted device, or any device with a display screen.

[0116] As can be seen from the above, the micro light-emitting device provided in this application embodiment has multiple color conversion layers on the light-emitting side of the light-emitting array structure, corresponding to the multiple sub-pixel areas of the light-emitting array structure. The color conversion layers are obtained by patterning a modified quantum dot photoresist layer. The modified quantum dot photoresist layer includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist. The modifier is used to form hydrogen bonds in the quantum dot photoresist. This not only enables color conversion of the light emitted by the light-emitting array structure in each sub-pixel area through each color conversion layer to achieve full-color display, but also improves the cohesion of the modified quantum dot photoresist layer by forming hydrogen bonds. This reduces the generation of edge burrs during the patterning process of the modified quantum dot photoresist layer, improves the photoresist pattern accuracy, and enables the quantum dot color conversion layer to meet high resolution requirements. This facilitates a more precise match between the quantum dot color conversion layer and the light-emitting array structure, improving the display effect and performance of the device.

[0117] Please see Figure 7 , Figure 7 This is a schematic flowchart illustrating the fabrication method of the micro-light-emitting device provided in the embodiments of this application. Please also refer to... Figures 1 to 6 as well as Figure 8 , Figures 1 to 6 as well as Figure 8 This is a schematic diagram of the fabrication process of the micro light-emitting device 1 provided in this embodiment. The specific process of fabricating the micro light-emitting device 1 provided in this embodiment is as follows:

[0118] Step S11: Provide a light-emitting array structure 10, the light-emitting array structure 10 having multiple sub-pixel regions P1 / P2 / P3 (e.g., ... Figures 1 to 6 (As shown).

[0119] Step S12: A barrier layer 21 is formed on the light-emitting side of the light-emitting array structure 10. Multiple through-holes 23A / 23B / 23C are provided on the barrier layer 21 corresponding to multiple sub-pixel regions P1 / P2 / P3. The through-holes 23A / 23B / 23C penetrate the barrier layer 21 and expose the corresponding sub-pixel regions P1 / P2 / P3 (e.g., ...). Figures 1 to 6 (As shown).

[0120] Specifically, such as Figures 1 to 6 As shown, step S12 above may include:

[0121] Step S121: Form a barrier material layer on the light-emitting side of the light-emitting array structure 10.

[0122] Specifically, a 4μm thick metal layer can be deposited on the light-emitting side surface of the light-emitting array structure 10 using an electron beam evaporation process to form a barrier material layer, wherein the barrier material layer is the metal layer, and the metal layer can be specifically an aluminum layer.

[0123] Step S122: On the side of the barrier material layer facing away from the light-emitting array structure 10, multiple through holes 23A / 23B / 23C are formed corresponding to multiple sub-pixel regions P1 / P2 / P3 respectively, to obtain the barrier layer 21.

[0124] Specifically, a dry etching process (e.g., inductively coupled plasma etching) can be used to etch multiple through-holes P1 / P2 / P3 through the barrier material layer on the side of the barrier material layer facing away from the light-emitting array structure 10, corresponding to multiple sub-pixel regions P1 / P2 / P3, from top to bottom, to obtain a barrier layer 21. The barrier layer 21 is the remaining barrier material layer after etching to form through-holes 23A / 23B / 23C. Furthermore, these multiple through-holes 23A / 23B / 23C expose the aforementioned multiple sub-pixel regions P1 / P2 / P3, ensuring that the light emitted by the light-emitting array structure 10 within each subsequent sub-pixel region P1 / P2 / P3 can exit through their respective through-holes 231 / 23B / 23C.

[0125] Step S13: Form multiple color conversion layers 22A / 22B / 22C, wherein the multiple color conversion layers 22A / 22B / 22C are respectively located in multiple vias 23A / 23B / 23C (e.g., Figures 1 to 6 (As shown).

[0126] In some embodiments, prior to step S13, the method for fabricating the micro-light-emitting device 1 may further include:

[0127] Step S14: Provide a modified quantum dot photoresist, which includes a quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, and the modifier is used to form hydrogen bonds in the quantum dot photoresist.

[0128] Specifically, a quantum dot photoresist can be provided, and a modifier can be added to the quantum dot photoresist and stirred until homogeneous to obtain a modified quantum dot photoresist. In some examples, 0.1 mL of the above-mentioned modifier can be added to 1 mL of quantum dot photoresist and stirred until completely homogeneous to obtain the modified quantum dot photoresist.

[0129] The quantum dot photoresist may include a photoresist masterbatch and quantum dots and scattering particles dispersed in the masterbatch. The masterbatch may include a photoinitiator and a resin containing epoxy or acrylic groups. In some examples, the quantum dot photoresist may also include a solvent to dilute the masterbatch, thereby better dispersing the quantum dots, scattering particles, and modifiers within the masterbatch, thus improving the uniformity and stability of the modified quantum dot photoresist. Furthermore, the addition of the solvent can adjust the viscosity of the modified quantum dot photoresist, making it more suitable for coating and patterning processes.

[0130] In practical implementation, the aforementioned modifier can be a substance capable of forming hydrogen bonds with components in the quantum dot photoresist (such as resin, photoinitiator, solvent, etc.), for example, a compound containing at least one of the functional groups such as methyl (-CH3), methoxy (-OCH3), hydroxyl (-OH), carboxyl (-COOH), and amino (-NH2). These functional groups can form hydrogen bonds with corresponding groups in the quantum dot photoresist, thereby improving the cohesiveness of the modified quantum dot photoresist and reducing the generation of edge burrs during the patterning process.

[0131] In some examples, the modifier described above may contain at least one functional group such as methyl, methoxy, and carbonyl. The molecular weight of the modifier may be between 4000 and 8000. Exemplarily, the modifier may specifically be a polymeric compound containing at least one functional group such as methyl, methoxy, and carbonyl, and the molecular weight of the polymeric compound may be between 4000 and 8000.

[0132] It is understood that the quantum dot photoresist and modifier used in the embodiments of this application can be prepared or can be obtained commercially.

[0133] Accordingly, step S13 above may include:

[0134] Step S131: On the side of the barrier layer 21 facing away from the light-emitting array structure 10, a modified quantum dot photoresist is coated to form a modified quantum dot photoresist layer 20. The modified quantum dot photoresist layer 20 fills the vias 23A / 23B / 23C (e.g., Figure 8 (As shown).

[0135] Specifically, such as Figure 8As shown, the modified quantum dot photoresist can be uniformly coated onto the side of the barrier layer 21 facing away from the light-emitting array structure 10 using coating methods such as spin coating, blade coating, spray coating, roller coating, or screen printing, forming a modified quantum dot photoresist layer 20 of a certain thickness. During the coating process, the thickness and uniformity of the modified quantum dot photoresist layer 20 can be controlled by adjusting parameters such as coating speed and coating amount.

[0136] Step S132: Pattern the modified quantum dot photoresist layer 20 to form multiple color conversion layers 22A / 22B. These multiple color conversion layers 22A / 22B are respectively configured to correspond to multiple sub-pixel regions P1 / P2 / P3 (e.g., ...). Figure 8 (As shown).

[0137] The patterning process can be achieved using photolithography, specifically including steps such as exposure and development. In the exposure step, a photomask 2 can be used to selectively expose the modified quantum dot photoresist layer 20, causing a chemical reaction in the exposed areas, making the modified quantum dot photoresist layer 20 less soluble. In the development step, a developer is used to remove the modified quantum dot photoresist layer 20 from the unexposed areas, thereby obtaining the color conversion layers 22A / 22B corresponding to the pattern 2 on the photomask. Furthermore, it should be noted that because the modifier in the modified quantum dot photoresist layer 20 can form hydrogen bonds, it increases the cohesive force of the modified quantum dot photoresist layer, thus reducing edge burrs during the patterning process, improving the precision of the photoresist pattern, enabling the quantum dot color conversion layer to meet high-resolution requirements, and facilitating a more precise match between the quantum dot color conversion layer and the light-emitting array structure, thereby improving the display effect and performance of the device.

[0138] Thus, through steps S11 to S14 described above, a micro-light-emitting device 1 with multiple color conversion layers 22A / 22B can be fabricated. These color conversion layers 22A / 22B have high pattern precision and can accurately match each sub-pixel region P1 / P2 / P3 of the light-emitting array structure 10, thereby improving the resolution and display effect of the device.

[0139] In some specific embodiments, such as Figure 8 As shown, step S132 may include: exposing the modified quantum dot photoresist layer 20, and then developing the exposed modified quantum dot photoresist layer to obtain multiple color conversion layers 22A / 22B.

[0140] Specifically, such as Figure 8As shown, after coating the light-emitting side of the light-emitting array structure 10 with modified quantum dot photoresist to form a modified quantum dot photoresist layer 20, the modified quantum dot photoresist layer 20 can be pre-baked to remove the solvent in the modified quantum dot photoresist layer 20, thereby achieving pre-curing of the modified quantum dot photoresist layer 20. Then, a preset photomask 2 can be placed above the pre-cured modified quantum dot photoresist layer, and ultraviolet light (or other beam energy) of a specific wavelength is used to expose the pre-cured modified quantum dot photoresist layer through the light-transmitting area in the photomask 2. During this exposure process, the photoresist in the exposed area of ​​the pre-cured modified quantum dot photoresist layer that receives light undergoes a cross-linking and curing reaction, enabling it to have different chemical solubility than the photoresist in the unexposed area of ​​the pre-cured modified quantum dot photoresist layer that does not receive light. Next, based on the difference in chemical solubility between the photoresist in the exposed area and the non-exposed area of ​​the modified quantum dot photoresist layer after exposure, a developer can be used to differentially dissolve the modified quantum dot photoresist layer after exposure, resulting in a patterned photoresist layer (i.e., color conversion layer 22A / 22B) with a photolithographic pattern, thus completing the development of the modified quantum dot photoresist layer after exposure.

[0141] Furthermore, it should be noted that because the modifier in the modified quantum dot photoresist can form hydrogen bonds, it improves the cohesive force of the modified quantum dot photoresist. Therefore, when the modified quantum dot photoresist is spin-coated and pre-baked to pre-cur the modified quantum dot photoresist layer 20, the distance between the active components in the entire colloid can be shortened, making the photochemical reaction easier to occur. This reduces the exposure dose required during the exposure process, thus improving the problem of reduced photoresist pattern accuracy caused by the scattering of the exposure light (e.g., ultraviolet light) by the scattering particles in the quantum dot photoresist. It can also reduce burrs during exposure, making the edges of the reactive and unreacted areas more obvious. This improves the edge clarity and pattern accuracy of the patterned modified quantum dot photoresist layer (i.e., color conversion layers 22A / 22B), thereby enhancing the display effect and performance of the micro light-emitting device 1.

[0142] In some examples, the aforementioned modifier is specifically a polymer compound containing methyl, methoxy, and carbonyl groups, with a molecular weight of 4,000 to 8,000. This can reduce the exposure dose by about 20%, while improving the lithography resolution to a linewidth of about 5 μm.

[0143] In some specific embodiments, such as Figures 1 to 6 As shown, the aforementioned multiple color conversion layers 22A / 22B / 22C include multiple first color conversion layers 22A and multiple second color conversion layers 22B. Furthermore, step S131 may specifically include:

[0144] Step S1311: On the light-emitting side of the barrier layer 21 away from the light-emitting array structure 10, a first modified quantum dot photoresist is coated to form a first modified quantum dot photoresist layer, which fills the above-mentioned plurality of first vias 23A2.

[0145] Step S1312: On the light-emitting side of the barrier layer 21 away from the light-emitting array structure 10, a second modified quantum dot photoresist is coated to form a second modified quantum dot photoresist layer, which at least fills the above-mentioned plurality of second vias 23B.

[0146] Accordingly, step S132 above can specifically include:

[0147] Step S1321: Expose the first modified quantum dot photoresist layer, and then develop the exposed first modified quantum dot photoresist layer to obtain multiple first color conversion layers 22A.

[0148] Step S1322: Expose the second modified quantum dot photoresist layer, and then develop the exposed second modified quantum dot photoresist layer to obtain multiple second color conversion layers 22B.

[0149] Specifically, in the above embodiment where the plurality of color conversion layers 22A / 22B / 22C further include a plurality of third color conversion layers 22C, step S131 may further include:

[0150] Step S1313: On the light-emitting side of the barrier layer 21 away from the light-emitting array structure 10, a third modified quantum dot photoresist is coated to form a third modified quantum dot photoresist layer, which at least fills the above-mentioned plurality of third vias 23C.

[0151] Accordingly, step S132 may further include:

[0152] Step S1323: Expose the third modified quantum dot photoresist layer, and then develop the exposed third modified quantum dot photoresist layer to obtain multiple third color conversion layers 22C.

[0153] It should be noted that the first, second, and third modified quantum dot photoresists mentioned above are all modified quantum dot photoresists, and the main difference between them lies in the different types of quantum dots they contain. For example, the quantum dots in the first modified quantum dot photoresist are red quantum dots that emit red light, the quantum dots in the second modified quantum dot photoresist are green quantum dots that emit green light, and the quantum dots in the third modified quantum dot photoresist layer are blue quantum dots that emit blue light. Thus, by using multiple photolithography processes to fabricate color conversion layers 22A / 22B / 22C with different emitting colors, it is ensured that the light emitted by the light-emitting array structure 10 in each sub-pixel region P1 / P2 / P3 can be converted into the desired color through its corresponding color conversion layer 22A / 22B / 22C, thereby achieving full-color display. Furthermore, the precise position and size of each color conversion layer 22A / 22B / 22C are controlled by photolithography, which further improves the color accuracy and resolution of the micro light-emitting device 1.

[0154] In the above embodiments, such as Figures 1 to 6 As shown, after step S13, the method for fabricating the micro-light-emitting device 1 may further include:

[0155] Step S15: A planarization layer 24 is formed on the light-emitting side of the light-emitting array structure 10. The planarization layer 24 covers the barrier layer 21 and multiple color conversion layers 22A / 22B / 22C, and the surface of the planarization layer 24 facing away from the light-emitting array structure 10, the barrier layer 21 and the multiple color conversion layers 22A / 22B / 22C is a flat surface.

[0156] Specifically, such as Figures 1 to 6 As shown, a planarization layer 24 can be formed on the light-emitting side of the light-emitting array structure 10 using conventional thin-film deposition processes such as plasma-enhanced chemical vapor deposition (PECVD), spin coating, spray coating, and inkjet printing. The planarization layer 24 not only covers the aforementioned barrier layer 21 and the multiple color conversion layers 22A / 22B / 22C, but also covers the attenuation filter layer 26, forming a flat structure with a uniform overall surface height, thereby improving the device's optical performance and light emission uniformity. Simultaneously, the planarization layer 24 enhances the isolation between the color conversion layers 22A / 22B / 22C and the external environment, improving device stability and lifespan.

[0157] In some embodiments, such as Figures 1 to 6 As shown, after step S15, the method for fabricating the micro light-emitting device 1 may further include:

[0158] Step S16: A light-transmitting substrate 30 is formed on the flat surface of the planarization layer 24.

[0159] Specifically, such as Figures 1 to 6As shown, an adhesive can be applied to the flat surface of the planarization layer 24 to bond the light-transmitting substrate 30 to the planarization layer 24, thereby completing the application of the light-transmitting substrate 30. The light-transmitting substrate 30 can protect the internal components of the micro-light-emitting device 1. Exemplarily, the light-transmitting substrate 30 can be any suitable substrate, such as a glass substrate, a polyimide substrate, or a sapphire substrate.

[0160] In some examples, permanent bonding adhesive can be spin-coated onto the flat surface of planarization layer 24 at a spin speed of 1500 rpm for 20 seconds. Then, the transparent substrate 30 is bonded to the flat surface of planarization layer 24 and heat-bonded using a vacuum bonding apparatus at a bonding temperature of 180°C. ℃ The bonding pressure is 3000N and the bonding time is 10min, so as to realize the light-transmitting substrate 30 on the flat surface of the planarization layer 24.

[0161] In some specific embodiments, such as Figure 5 As shown, the light-emitting array structure 10 has multiple light-emitting regions C1, which are spaced apart. Specifically, the multiple light-emitting regions C1 can be arranged in an array to form a light-emitting region array. Furthermore, the light-emitting structure 10 may also have non-light-emitting regions C2, which may include a spacing region C21 and a peripheral region C22. The spacing region C21 is the interval between the multiple light-emitting regions C1, used to separate each light-emitting region C1 from other light-emitting regions C1 located around it. The peripheral region C22 is the area surrounding the multiple light-emitting regions C1.

[0162] Specifically, such as Figure 5 As shown, the aforementioned light-emitting array structure 10 may include a light-emitting structure 11, which may include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. The light-emitting layer 112 and the second semiconductor layer 113 are located within the light-emitting region C1 and are sequentially stacked on one side of the first semiconductor layer 111. Furthermore, the light-emitting side of the aforementioned light-emitting array structure 10 may specifically be the light-emitting side of the light-emitting structure 11, and the aforementioned plurality of color conversion layers 22A / 22B / 22C may specifically be located on the side of the first semiconductor layer 111 facing away from the light-emitting layer 112.

[0163] In some embodiments, the light-emitting structure 11 may further include a buffer layer (not shown in the figure), the buffer layer being located on the side of the first semiconductor layer 111 away from the light-emitting layer 112, and the plurality of color conversion layers 22A / 22B / 22C may be specifically located on the side of the buffer layer away from the first semiconductor layer 111.

[0164] Specifically, the light-emitting structure 11 may further include a first substrate (not shown in the figure), the first substrate being located on the side of the buffer layer away from the first semiconductor layer 111, and the plurality of color conversion layers 22A / 22B / 22C may be specifically located on the side of the first substrate away from the buffer layer.

[0165] Furthermore, prior to step S12, the method for fabricating the micro-light-emitting device 1 may further include:

[0166] Step S17: Provide a temporary substrate and bond the backlight side of the light-emitting array structure 10 to one side of the temporary substrate to obtain a temporary bonding structure.

[0167] Specifically, temporary bonding adhesive can be spin-coated onto the backlight side of the light-emitting array structure 10 at a spin speed of 1500 rpm for 20 seconds, and then at 160°C. ℃ Pre-curing was performed by heating for 10 minutes, followed by spin-coating of temporary bonding adhesive onto the surface of a temporary substrate (e.g., a double-polished sapphire substrate) at 1500 rpm for 20 seconds, and then further cured at 160°C. ℃ Pre-curing is performed by heating for 10 minutes. Afterward, the two layers of adhesive can be bonded side-by-side using a vacuum bonding machine at a bonding temperature of 180°C. ℃ The bonding pressure was 3000N and the bonding time was 10min, resulting in a temporary bonded structure.

[0168] Step S18: Remove the first substrate of the light-emitting array structure 10 in the temporary bonding structure.

[0169] Specifically, after obtaining the temporary bonding structure, the first substrate of the light-emitting array structure 10 in the temporary bonding structure can be removed using a laser stripping device. The wavelength of the laser used for stripping is 266nm and the power is 0.6W.

[0170] Furthermore, in the above embodiment where the light-emitting array structure 10 includes a first substrate and a buffer layer, the first substrate of the light-emitting array structure 10 in the temporary bonding structure can be removed first using a laser stripping device, and then the buffer layer 122 of the light-emitting array structure 10 in the temporary bonding structure can be decomposed and removed, thereby completing the removal of the first substrate and the buffer layer of the light-emitting array structure 10 in the temporary bonding structure.

[0171] Accordingly, step S12 may specifically include: forming a barrier layer 21 on the light-emitting side of the light-emitting array structure 10 after removing the first substrate and / or buffer layer.

[0172] Furthermore, after step S16, the method for fabricating the micro-light-emitting device 1 may further include:

[0173] Step S19: Remove the temporary substrate to expose the backlight side of the light-emitting array structure 10.

[0174] Specifically, a laser stripping device can be used to strip the temporary substrate. The wavelength of the laser used for stripping is 266nm and the power is 0.6W.

[0175] Step S20: Bond the backlight side of the light-emitting array structure 10 exposed after removing the temporary substrate to one side of the driving substrate 12 to obtain a bonding structure.

[0176] Specifically, after removing the temporary substrate, the residual adhesive can be cleaned first, and then the light-emitting array structure 10 can be reflowed and flip-chip bonded to the driving substrate 12 to obtain a bonding structure.

[0177] Step S21: Micro-light-emitting device 1 is fabricated based on the bonding structure.

[0178] Specifically, after obtaining the bonding structure, the bonding structure can be subjected to underfilling, cutting, die bonding, and wire bonding in sequence to obtain a color display module, which is a micro light-emitting device 1.

[0179] Thus, the micro-light-emitting device 1 obtained through the above steps S11 to S21 can have higher resolution, greater pixel density, wider color gamut, higher blue light to white light ratio and higher peak brightness. For example, it can achieve a 480*480 resolution color display on a 0.2-inch display screen, the color gamut of the color display can reach 120%, the blue light to white light ratio can reach 1:0.6, and there is no need to use die-to-die bonding equipment, which improves the product yield.

[0180] It should be noted that the specific structure of the micro light-emitting device 1 in this embodiment can be referred to the specific implementation method in the above embodiment of the micro light-emitting device, so it will not be repeated here.

[0181] As can be seen from the above, the fabrication method of the micro light-emitting device provided in this application embodiment involves providing a light-emitting array structure having multiple sub-pixel regions, and providing a modified quantum dot photoresist, which includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, wherein the modifier is used to form hydrogen bonds in the quantum dot photoresist; then, the modified quantum dot photoresist is coated on the light-emitting side of the light-emitting array structure to form a modified quantum dot photoresist layer, and the modified quantum dot photoresist layer is patterned to form multiple color conversion layers, which are respectively associated with multiple sub-pixels. By configuring corresponding zones, not only can the light emitted from the light-emitting array structure in each sub-pixel zone be converted into colors through each color conversion layer to achieve full-color display, but also the modifier in the modified quantum dot photoresist layer can form hydrogen bonds, which improves the cohesive force of the modified quantum dot photoresist layer. Therefore, it can reduce the generation of edge burrs during the patterning process of the modified quantum dot photoresist layer, improve the photoresist pattern accuracy, enable the quantum dot color conversion layer to meet high resolution requirements, and facilitate more precise matching between the quantum dot color conversion layer and the light-emitting array structure, thereby improving the display effect and performance of the device.

[0182] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The features, structures, or characteristics described above can be combined in any suitable manner in one or more embodiments.

[0183] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A miniature light-emitting device, characterized in that, include: The light-emitting array structure has multiple sub-pixel regions; Multiple color conversion layers are disposed on the light-emitting side of the light-emitting array structure and are respectively disposed corresponding to the multiple sub-pixel regions. The color conversion layers are obtained by patterning a modified quantum dot photoresist layer. The modified quantum dot photoresist layer includes quantum dot photoresist and a modifier dispersed in the quantum dot photoresist. The modifier is used to form hydrogen bonds in the quantum dot photoresist.

2. The micro light-emitting device according to claim 1, characterized in that, The modifier contains at least one functional group selected from methyl, methoxy, and carbonyl.

3. The micro light-emitting device according to claim 2, characterized in that, The molecular weight of the modifier is 4000-8000.

4. The micro light-emitting device according to claim 1, characterized in that, The quantum dot photoresist includes a photoresist mother liquor and quantum dots and scattering particles dispersed in the photoresist mother liquor, wherein the photoresist mother liquor includes a photoinitiator and a resin containing epoxy groups or acrylic groups.

5. The micro light-emitting device according to claim 1, characterized in that, The light emission color of the light-emitting array structure within each of the multiple sub-pixel regions is the initial color; The plurality of color conversion layers include a first color conversion layer and a second color conversion layer, wherein the first color conversion layer is used to convert the light of the initial color into the light of the first target color, the second color conversion layer is used to convert the light of the initial color into the light of the second target color, and the light of the first target color, the light of the second target color, and the light of the initial color are used to synthesize white light.

6. The micro light-emitting device according to claim 1, characterized in that, The micro light-emitting device includes: A barrier layer is disposed on the light-emitting side of the light-emitting array structure and has multiple light-transmitting areas, which are respectively disposed corresponding to the multiple sub-pixel areas, and the multiple color conversion layers are respectively located in the multiple light-transmitting areas.

7. The micro light-emitting device according to claim 1, characterized in that, The micro light-emitting device also includes: A planarization layer is disposed on the light-emitting side of the light-emitting array structure and covers at least the plurality of color conversion layers, wherein the surface of the planarization layer facing away from the light-emitting array structure and the plurality of color conversion layers is a flat surface; A light-transmitting substrate is disposed on the flat surface of the planarization layer.

8. The micro light-emitting device according to claim 1, characterized in that, The light-emitting array structure has multiple light-emitting regions and non-light-emitting regions arranged around each light-emitting region, and each sub-pixel region has at least one light-emitting region; Furthermore, the light-emitting array structure includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode; The light-emitting layer and the second semiconductor layer are located within the light-emitting region and are stacked sequentially on one side of the first semiconductor layer, and the plurality of color conversion layers are located on the side of the first semiconductor layer away from the light-emitting layer; The first electrode is located in the light-emitting area and is disposed on the side of the second semiconductor layer opposite to the light-emitting layer. The second electrode is located in the non-light-emitting area and is disposed on the side of the first semiconductor layer opposite to the plurality of color conversion layers.

9. The micro light-emitting device according to claim 1, characterized in that, The micro light-emitting device also includes: A driving substrate, wherein the light-emitting array structure is disposed on one side of the driving substrate, and the side of the light-emitting array structure facing away from the driving substrate is the light-emitting side of the light-emitting array structure.

10. A method for fabricating a micro light-emitting device, characterized in that, include: A light-emitting array structure is provided, the light-emitting array structure having multiple sub-pixel regions; A barrier layer is formed on the light-emitting side of the light-emitting array structure. The barrier layer has multiple through holes corresponding to the multiple sub-pixel areas. The through holes penetrate the barrier layer and expose the corresponding sub-pixel areas. Multiple color conversion layers are formed, and the multiple color conversion layers are respectively located in the multiple through holes.

11. The method for fabricating a micro light-emitting device according to claim 10, characterized in that, Prior to forming the multiple color conversion layers, the method further includes: A modified quantum dot photoresist is provided, the modified quantum dot photoresist comprising a quantum dot photoresist and a modifier dispersed in the quantum dot photoresist, wherein the modifier is used to form hydrogen bonds in the quantum dot photoresist; Furthermore, the formation of multiple color conversion layers includes: On the side of the barrier layer facing away from the light-emitting array structure, the modified quantum dot photoresist is coated to form a modified quantum dot photoresist layer, which fills the via. The modified quantum dot photoresist layer is patterned to form multiple color conversion layers, which are respectively configured to correspond to the multiple sub-pixel regions.

12. The method for fabricating a micro light-emitting device according to claim 11, characterized in that, The modified quantum dot photoresist includes: A quantum dot photoresist is provided, and a modifier is added to the quantum dot photoresist. The mixture is stirred and mixed evenly to obtain a modified quantum dot photoresist.

13. The method for fabricating a micro light-emitting device according to claim 10, characterized in that, After forming the multiple color conversion layers, the method further includes: A planarization layer is formed on the light-emitting side of the light-emitting array structure. The planarization layer covers the barrier layer and the plurality of color conversion layers, and the surface of the planarization layer facing away from the light-emitting array structure, the barrier layer and the plurality of color conversion layers is a flat surface. A light-transmitting substrate is disposed on the flat surface of the flat layer.

14. The method for fabricating a micro light-emitting device according to claim 13, characterized in that, Before forming a barrier layer on the light-emitting side of the light-emitting array structure, the method further includes: A temporary substrate is provided, and the backlight side of the light-emitting array structure is bonded to one side of the temporary substrate to obtain a temporary bonding structure; Remove the substrate of the light-emitting array structure from the temporary bonding structure; Furthermore, after the light-transmitting substrate is disposed on the flat surface of the planarization layer, the method further includes: Remove the temporary substrate to expose the backlight side of the light-emitting array structure; After removing the temporary substrate, the exposed backlight side of the light-emitting array structure is bonded to one side of the driving substrate to obtain a bonding structure. Micro-light-emitting devices were fabricated based on the bonding structure described above.

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