Solar cell, preparation method thereof and power utilization device

Abstract

The invention relates to a solar cell, a preparation method thereof and an electric device. The solar cell comprises a substrate and an electrode layer arranged on one side of the substrate. The substrate comprises a perovskite absorption layer. The electrode layer is a refractory metal electrode layer. According to the solar cell provided by the invention, the electrode layer is the refractory metal electrode layer, and compared with silver and copper metal electrodes, the refractory metal electrode layer has more stable chemical properties and does not easily react with a halogen simple substance generated by oxidation of free halogen ions of a light absorption material in the perovskite absorption layer; therefore, the technical problems of electrode contact resistance increase and electrode structure pulverization caused by the reaction between the silver and copper metal electrodes and the halogen elementary substance are solved, and the efficiency of the solar cell is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof and an electric device. BACKGROUND

[0002] In the prior art, a solar cell generally adopts a silver or copper metal electrode. However, for a perovskite solar cell, in a long-term operation process of the solar cell, perovskite material will decompose to generate halogen elements, and the halogen elements will diffuse to the metal electrode to react with silver and copper to generate metal halides, thereby increasing the contact resistance of the electrode and causing the electrode structure to be pulverized. SUMMARY

[0003] To solve the above technical problems, the present application provides a solar cell, a preparation method thereof and an electric device.

[0004] The first aspect of the present application provides a solar cell, comprising a substrate and an electrode layer arranged on one side of the substrate, wherein the substrate comprises a perovskite absorption layer; and the electrode layer is a refractory metal electrode layer.

[0005] In some embodiments, the refractory metal electrode layer is a single electrode layer or a composite electrode layer, and the refractory metal in the refractory metal electrode layer comprises at least one of Mo, Cr, W and Ni.

[0006] In some embodiments, the composite electrode layer comprises a first electrode layer and a second electrode layer, the first electrode layer is arranged between the substrate and the second electrode layer, the second electrode layer is a Ni layer, and the materials of the first electrode layer and the second electrode layer are different.

[0007] In some embodiments, the thickness H1 of the first electrode layer is 10 nm to 100 nm, and the thickness H2 of the second electrode layer is 200 nm to 1000 nm.

[0008] In some embodiments, the mass percentage of Ni is 30% to 100% based on the mass of the single electrode layer.

[0009] In some embodiments, the mass percentage of Ni is 60% to 90%.

[0010] In some embodiments, the solar cell further comprises a transparent conductive electrode layer, and the transparent conductive electrode layer is arranged between the substrate and the refractory metal electrode layer.

[0011] In some embodiments, the solar cell further comprises an Ag or Cu electrode layer, and the Ag or Cu electrode layer is arranged on the side of the refractory metal electrode layer away from the substrate.

[0012] In some embodiments, the substrate further comprises at least one of a conductive substrate layer, a hole transport layer and an electron transport layer.

[0013] The second aspect of the present application provides a method for preparing the solar cell provided in the first aspect, comprising the following steps:

[0014] forming an electrode layer on one side of the substrate to obtain the solar cell; wherein the substrate comprises the perovskite absorption layer; and the electrode layer comprises a refractory metal electrode layer.

[0015] The third aspect of the present application provides a power utilization device comprising the solar cell provided in the first aspect.

[0016] The solar cell provided in the present application has a refractory metal electrode layer for the electrode layer. Compared with silver and copper metal electrodes, the refractory metal has more stable chemical properties and is less likely to react with halogen elements generated by the oxidation of free halogen ions of the light-absorbing material in the perovskite absorption layer, thereby solving the technical problems of the increase of the contact resistance of the electrode and the pulverization of the electrode structure caused by the reaction of silver and copper metal electrodes with halogen elements, and improving the efficiency of the solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 XPS pattern of molybdenum boat and iodine element after heating at 55℃ for 0.5h.

[0018] Figure 2 XPS pattern of molybdenum boat and iodine element after heating at 55℃ for 1.5h.

[0019] Figure 3 XPS pattern of molybdenum boat and iodine element after heating at 55℃ for 2h and soaking in deionized water for 0.5h.

[0020] Figure 4 XPS pattern of tungsten boat and iodine element after heating at 55℃ for 0.5h.

[0021] Figure 5 XPS pattern of tungsten boat and iodine element after heating at 55℃ for 1.5h.

[0022] Figure 6 XPS pattern of tungsten boat and iodine element after heating at 55℃ for 2h and soaking in deionized water for 0.5h.

[0023] Figure 7 XRD comparison pattern of iodine fumigated high-purity nickel metal particles at different times.

[0024] Figure 8 XPS pattern of high-purity nickel metal particles after iodine fumigation and heating for 2h. DETAILED DESCRIPTION

[0025] Reference will now be made in detail to the embodiments of the present application, one or more examples of which are set forth below. Each example is provided by way of explanation of the present application, not limitation of the present application. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the scope or spirit of the present application. For example, features illustrated or described as part of one embodiment, can be used with another embodiment to yield a still further embodiment.

[0026] Thus, it is intended that the present application cover modifications and variations of this application provided they come within the scope of the appended claims and their equivalents. Other objects, features, and aspects of the present application are disclosed in or are apparent from the following detailed description of the application. It is to be understood by the foregoing description that the form of the application herein disclosed is to be considered only insofar as representative of the principles of the application. The description together with the claims and the drawings is to be regarded in an illustrative rather than a restrictive sense.

[0027] In the present application, the technical features described in an open way include both the closed technical solution consisting of the listed features and the open technical solution containing the listed features.

[0028] In the present application, when referring to a numerical interval, unless otherwise specified, the numerical interval is considered to be continuous and includes the minimum value and the maximum value of the range, as well as every value between the minimum value and the maximum value. Further, when the range refers to integers, every integer between the minimum value and the maximum value of the range is included. In addition, when multiple ranges are provided to describe a feature or a characteristic, the ranges can be combined. In other words, unless otherwise specified, all ranges disclosed herein are to be understood to include any and all sub-ranges subsumed therein.

[0029] In the present application, when referring to a data range, if only the unit is provided after the right endpoint, it means that the units of the left endpoint and the right endpoint are the same. For example, 100~150nm means that the units of the left endpoint "100" and the right endpoint "150" are both nm (nanometer).

[0030] If not specified, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0031] If not specified, all technical features and optional technical features of the present application can be combined with each other to form new technical solutions.

[0032] If not specifically stated, all steps of the present application can be performed in sequence or randomly, preferably in sequence. For example, a method comprising steps (a) and (b) means that the method can comprise steps (a) and (b) in sequence, or steps (b) and (a) in sequence. For example, it is mentioned that the method can further comprise step (c), which means that step (c) can be added to the method in any order, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0033] If not specifically stated, "comprising" and "including" mentioned in the present application means open, and can also be closed. For example, "comprising" and "including" can mean that other components not listed can also be included or contained, or only the listed components can be included or contained.

[0034] If not specifically stated, in the present application, the term "or" is inclusive. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, any one of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or A and B are both true (or exist).

[0035] In conventional batteries, silver or copper electrodes are generally used, which have the following defects: the cost of silver material is high, which accounts for 15% to 20% of the total cost of the battery; the long-term stability is poor, and the efficiency decay rate is greater than 30% / 1000h under the condition of 85℃ / 85%RH environment; the interface reaction causes the open-circuit voltage (Voc) and the series resistance loss; and for perovskite solar cells, in the long-term operation process of the battery, the perovskite material will decompose to generate iodine element, and the iodine element will diffuse to the metal electrode and react with silver and copper to generate metal halide, resulting in an increase in the contact resistance of the electrode and the powderization of the electrode structure. Therefore, it is urgent to find a new electrode to solve the above technical problems.

[0036] The first aspect of the present application provides a solar cell, comprising a substrate and an electrode layer arranged on one side of the substrate, wherein the substrate comprises a perovskite absorption layer; and the electrode layer is a refractory metal electrode layer.

[0037] The solar cell provided in the present application has a refractory metal electrode layer, which is more stable in chemical properties than the silver or copper metal electrode used in conventional technology, and is not easy to react with the halogen element generated by the oxidation of the free halogen ion of the light-absorbing material in the perovskite absorption layer, thereby solving the technical problems of the increase in the contact resistance of the electrode and the powderization of the structure caused by the reaction of the silver or copper metal electrode with the halogen element, and improving the efficiency of the solar cell.

[0038] In some embodiments, the refractory metal electrode layer is a single electrode layer or a composite electrode layer, and the refractory metal in the refractory metal electrode layer comprises at least one of molybdenum (Mo), chromium (Cr), tungsten (W), and nickel (Ni).

[0039] In some embodiments, the refractory metal electrode layer is a composite electrode layer.

[0040] The composite electrode layer comprises a first electrode layer and a second electrode layer, the first electrode layer is arranged between the substrate and the second electrode layer, the second electrode layer is a nickel (Ni) layer, and the first electrode layer and the second electrode layer are made of different materials.

[0041] It can be understood that the first electrode layer described above can be composed of a single refractory metal, for example, the first electrode layer is a molybdenum (Mo) electrode layer, a chromium (Cr) electrode layer, or a tungsten (W) electrode layer. It can also be composed of two or more refractory metals, for example, Ni-Mo, Ni-Cr, Ni-W, Mo-Cr, Mo-W, Cr-W, Ni-Mo-Cr, Ni-Mo-W, Mo-Cr-W, Ni-Mo-Cr-W, Ni / Mo, Ni / Cr, Ni / W, Mo / Cr, Mo / W, Cr / W, Ni / Mo / Cr, Ni / Mo / W, Mo / Cr / W, Ni / Mo / Cr / W, etc.

[0042] In the present application, Ni-Mo refers to a mixture of nickel metal and molybdenum metal, wherein the nickel metal and the molybdenum metal are simply mixed together. Ni / Mo refers to a nickel-molybdenum alloy, wherein the nickel-molybdenum alloy is prepared by specific process conditions.

[0043] The present application sets the first electrode layer between the substrate and the second electrode layer, and the first electrolyte layer contains at least one of molybdenum (Mo), chromium (Cr), and tungsten (W). The work function values of molybdenum, chromium, and tungsten are all low, which can better match the electron transport layer in the solar cell compared with the nickel electrode layer, thereby avoiding the technical problem of mismatch between the electrode layer and the electron transport layer or the transparent conductive electrode layer.

[0044] In some embodiments, the thickness of the first electrode layer is H1, and the thickness of the second electrode layer is H2, wherein the thickness of H1 is 10 nm to 100 nm, including but not limited to 10 nm, 20 nm, 40 nm, 60 nm, 80 nm, and 100 nm; the thickness of H2 is 200 nm to 1000 nm, including but not limited to 200 nm, 400 nm, 600 nm, 800 nm, and 1000 nm.

[0045] Further, the thickness of H1 is 10 nm to 15 nm, and the thickness of H2 is 300 nm to 500 nm.

[0046] The present application sets the thickness H1 of the first electrode layer at 10 nm to 100 nm. Within this range, the first electrode layer can effectively match the energy level barrier of the work function reduction of the electron transport layer or the transparent conductive electrode layer. When H1 is less than 10 nm, the thin film cannot be completely covered due to island growth under actual process conditions, and the energy level matching effect is slightly lower. When H1 is greater than 100 nm, the raw material cost is relatively high.

[0047] The present application sets the thickness H2 of the second electrode layer at 200 nm to 1000 nm. Within this range, the current of the sub-cell can be effectively collected. When H2 is less than 200 nm, the series resistance of the assembly will increase due to insufficient conductivity. When H2 is greater than 1000 nm, the marginal benefit of the assembly efficiency improvement brought by the improved conductivity is limited, but the material cost is significantly increased and the process productivity is reduced.

[0048] In some embodiments, the insoluble metal electrode layer is a single electrode layer. The mass percentage of Ni is 30% to 100% based on the mass of the single electrode layer, including but not limited to 30%, 30%, 50%, 70%, 90%, 100%. Further, the mass percentage of Ni is 60% to 90%.

[0049] It can be understood that when the insoluble metal electrode layer is a single electrode layer, the single electrode layer preferably includes both nickel and other insoluble metals. For example, Ni-Mo, Ni-Cr, Ni-W, Ni-Mo-Cr, Ni-Mo-W, Ni-Mo-Cr-W, etc. By adjusting the ratio of nickel and other insoluble metals in the electrode layer within a suitable range, the technical problem of mismatching between the nickel electrode layer and the electron transport layer is solved while avoiding the reaction between the metal electrode and the halogen element, and the cost is controlled.

[0050] In some embodiments, the thickness H3 of the single electrode layer is 200 nm to 2000 nm, including but not limited to 200 nm, 400 nm, 600 nm, 800 nm, 1000 nm, 2000 nm. Further, the thickness H3 of the single electrode layer is 300 nm to 500 nm.

[0051] By controlling the thickness H3 of the single electrode layer to be 200 nm to 2000 nm, the current of the sub-cell can be effectively collected. When H3 is less than 200 nm, the series resistance of the assembly will increase due to insufficient conductivity. When H3 is greater than 2000 nm, the marginal benefit of the assembly efficiency improvement brought by the improved conductivity is limited, but the material cost is significantly increased and the process productivity is reduced.

[0052] In some embodiments, the solar cell further comprises a transparent conductive electrode layer, which is disposed between the substrate and the refractory metal electrode layer.

[0053] In some embodiments, the transparent conductive electrode layer comprises at least one of ITO, FTO, AZO, BZO, IZO, IWO, ICO, VTTO, and SnOx. The addition of the transparent conductive electrode layer between the substrate and the refractory metal electrode layer can effectively improve the carrier transport capability of the solar cell.

[0054] In some embodiments, the solar cell further comprises an Ag or Cu electrode layer, which is disposed on the side of the refractory metal electrode layer away from the substrate.

[0055] The present application achieves the thinning of the electrode layer by adding an Ag or Cu electrode layer on the side of the refractory metal electrode layer away from the substrate.

[0056] In some embodiments, the substrate further comprises at least one of a conductive substrate layer, a hole transport layer, and an electron transport layer.

[0057] In some embodiments, the conductive substrate layer comprises at least one of FTO, ITO, AZO, BZO, and IZO. The use of the above-mentioned at least one conductive substrate layer can effectively improve the carrier transport capability of the solar cell.

[0058] In some embodiments, the chemical formula of the material of the perovskite absorption layer comprises ABX3, and the ABX3 structure is composed of corner-shared BX6 octahedra and A cations in the interstices thereof, wherein A comprises monovalent cations, B comprises at least one of monovalent cations, divalent cations, and trivalent cations, and X comprises halide anions. A is preferably one or more of MA, FA, Cs, or Rb, B is preferably Pb, and X is preferably one or more of I, Br, Cl halide anions or SCN, BF4, PF6, etc. pseudohalide anions.

[0059] In some embodiments, the material of the electron transport layer comprises one or more of fullerene C60, fullerene C70, tin oxide, zinc oxide, titanium oxide, zinc tin oxide, graphene, and a fullerene derivative.

[0060] In some embodiments, the material of the hole transport layer includes, but is not limited to, one or more of nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, cuprous thiocyanate, redox graphene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD), poly(3-hexylthiophene-2,5-diyl) (P3HT), N2,N2,N2',N2',N7,N7,N7',N7'-octakis(4-methoxyphenyl)spiro[fluorene-9,9'-xanthene]-2,2',7,7'-tetramine (X60), N2,N7-di(4-methoxyphenyl)-N2,N7-di(2-spiro[fluorene-9,9'-xanthene])-spiro[fluorene-9,9'-xanthene]-2,7-diamine (X55), poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), 2,2,7,7-tetrakis(N,N-di-p-tolyl)amino-9,9-spirobifluorene (Spiro-TTB), polyvinylcarbazole (PVK), a self-assembled material containing a triphenylamine structure, a small molecule material or a polymer thereof, a self-assembled material containing a carbazole structure, a small molecule material or a polymer thereof.

[0061] The second aspect of the present application provides a method for preparing a solar cell as provided in the first aspect above, comprising the following steps:

[0062] forming an electrode layer on one side of the substrate to obtain the solar cell; wherein the substrate comprises a perovskite absorption layer; and the electrode layer is a refractory metal electrode layer.

[0063] It can be understood that the solar cell in the present application can be a perovskite thin film cell or a perovskite stacked cell. In the present application, it is not particularly limited.

[0064] In some embodiments, the preparation of the substrate comprises the following steps:

[0065] forming an electrode layer on one side of the substrate to obtain the solar cell; wherein the substrate comprises a perovskite absorption layer; and the electrode layer is a refractory metal electrode layer.

[0066] Alternatively, sequentially disposing a conductive substrate layer, an electron transport layer, a perovskite absorption layer and a hole transport layer on a glass substrate to obtain the substrate.

[0067] In some embodiments, the preparation of the solar cell comprises the following steps:

[0068] disposing a conductive substrate layer on a glass substrate;

[0069] P1 scribe line: the conductive substrate layer is divided by a battery scribe process to form a P1 slot that exposes the substrate;

[0070] A hole transport layer, a perovskite absorption layer, and an electron transport layer are sequentially arranged on the surface of the conductive substrate layer.

[0071] P2 scribe line: the hole transport layer, the perovskite absorption layer, and the electron transport layer are divided by a battery scribe process on one side of the P1 slot to form a P2 slot that exposes the conductive substrate layer.

[0072] An electrode layer is arranged on the electron transport layer; wherein the electrode layer comprises a refractory metal electrode layer.

[0073] P3 scribe line: a P3 slot is formed by a battery scribe process on the side of the P2 slot away from the P1 slot, and the P3 slot at least divides the electrode layer.

[0074] In some embodiments, the preparation of the solar cell comprises the following steps:

[0075] A hole transport layer, a perovskite absorption layer, an electron transport layer, a transparent conductive layer, and an electrode layer are sequentially arranged on the heterojunction bottom N face, wherein the electrode layer is a refractory metal electrode layer.

[0076] The third aspect of the present application provides a power utilization device, which comprises the solar cell provided in the first aspect.

[0077] The present application will be further described below in conjunction with specific examples and comparative examples.

[0078] Example 1

[0079] The solar cell in this example is a perovskite thin film cell.

[0080] The glass substrate is cleaned and an ITO conductive substrate layer is deposited thereon. The ITO conductive substrate layer is divided by a laser etching scribe process to form a P1 slot that exposes the substrate, and the slot width is 30 μm.

[0081] Hole transport layer: a nickel oxide hole transport layer is deposited on the surface of the ITO conductive substrate layer by a physical vapor deposition (PVD) method, and the temperature is controlled at 200℃ and the argon-oxygen ratio is 19:1.

[0082] Perovskite absorption layer: perovskite material is coated on the surface of the hole transport layer by a slot coating process to form a perovskite absorption layer. The precursor solution of the perovskite material has a molar ratio of FAI:CsI:PbI2:PbBr2 of 0.9:0.1:1:0.05, and the solvents are N,N-dimethylformamide (DMF) and N-methyl pyrrolidone (NMP) with a volume ratio of 8:2.

[0083] Electron transport layer: Fullerene C60 electron transport layer is formed on the surface of the perovskite absorption layer by a thermal evaporation process (the deposition rate of the thin film material is 1 A / s), and then a SnO2 layer is prepared by atomic layer deposition (ALD), with a thickness of 10 nm.

[0084] The hole transport layer, the perovskite absorption layer, and the electron transport layer are divided on one side of the P1 slot by a laser etching scribe process to form a P2 slot that exposes the conductive substrate layer.

[0085] Electrode layer: The electrode layer is formed on the electron transport layer by a magnetron sputtering process. The electrode layer is a nickel metal electrode layer with a thickness of 500 nm.

[0086] P3 scribe: A P3 slot is formed on the side of the P2 slot away from the P1 slot by a battery scribe process, and the P3 slot at least divides the electrode layer.

[0087] Examples 2 to 13

[0088] Examples 2-13 are all perovskite thin-film batteries, and the main difference compared with Example 1 is the composition of the electrode layer and the thickness distribution of the electrode layer, which will not be described in detail here. The parameters of the solar cells in Examples 1-13 are summarized in Table 1 below.

[0089] Example 14

[0090] The difference between this example and Example 11 is that a TCO layer is provided between the substrate and the electrode layer. The TCO layer is an ITO layer with a thickness of 20 nm.

[0091] Example 15

[0092] The difference between this example and Example 11 is that a copper electrode layer is provided on the side of the electrode layer away from the substrate, with a thickness of 100 nm.

[0093] Example 16

[0094] The difference between this example and Example 11 is that an ITO layer is provided between the substrate and the electrode layer, with a thickness of 10 nm. A copper electrode layer is provided on the side of the electrode layer away from the substrate, with a thickness of 120 nm.

[0095] Example 17

[0096] The solar cell in this example is a crystalline silicon perovskite stacked cell.

[0097] Hole transport layer: A nickel oxide hole transport layer is deposited on the heterojunction bottom N face by physical vapor deposition (PVD) method, with a control temperature of 200°C and an argon-oxygen ratio of 19:1.

[0098] Perovskite absorption layer: perovskite material is coated on the surface of the hole transport layer by slot coating process to form a perovskite absorption layer. The precursor solution of the perovskite material is FAI:CsI:PbI2:PbBr2 with a molar ratio of 0.8:0.2:0.8:0.2, and the solvent is N,N-dimethylformamide (DMF):dimethyl sulfoxide (DMSO) with a volume ratio of 8:2.

[0099] Electron transport layer: a fullerene C60 electron transport layer is first formed on the surface of the perovskite absorption layer by a thermal evaporation process (the deposition rate of the thin film material is 1 A / s), and then a SnO2 layer is prepared by atomic layer deposition (ALD) with a thickness of 10 nm.

[0100] Transparent conductive layer: IZO layer is prepared by magnetron sputtering process with a thickness of 70 nm.

[0101] Electrode layer: the electrode layer is formed on the transparent conductive layer by screen printing process. Among them, low-temperature nickel paste (line width is 30 μm, and spacing is 2 mm) is used, and 120°C annealing is performed for 20 min.

[0102] Example 18

[0103] The difference between this example and example 17 is that the electrode layer is a Ni / Cr electrode layer,

[0104] Electrode layer: the electrode layer is formed on the transparent conductive layer by screen printing process. Among them, low-temperature nickel 75 chromium alloy paste (line width is 30 μm, and spacing is 2 mm) is used, and 120°C annealing is performed for 20 min.

[0105] Example 19

[0106] The difference between this example and example 18 is that a silver electrode layer with a thickness of 1000 nm is arranged on the side of the electrode layer away from the substrate.

[0107] Electrode layer: the electrode layer is formed on the transparent conductive layer by screen printing process. Among them, low-temperature nickel 75 chromium alloy paste (line width is 30 μm, and spacing is 3 mm) is used, and 120°C annealing is performed for 20 min. The second electrode layer is aligned and overprinted on the first electrode layer. Among them, low-temperature silver paste (line width is 30 μm, and spacing is 3 mm) is used, and 120°C annealing is performed for 20 min.

[0108] Comparative Example 1

[0109] The difference between this comparative example and example 1 is that a copper metal electrode is used.

[0110] Comparative Example 2

[0111] The difference between this comparative example and example 1 is that a silver metal electrode is used.

[0112] Comparative Example 3

[0113] The difference between this comparative example and Example 1 is that a copper electrode layer with a thickness of 100 nm is provided between the substrate and the refractory metal electrode layer.

[0114] Comparative Example 4

[0115] The difference between this comparative example and Example 11 is that a copper electrode layer with a thickness of 50 nm is provided between the substrate and the refractory metal electrode layer.

[0116] Comparative Example 5

[0117] The difference between this comparative example and Example 17 is that a silver metal electrode is used.

[0118] The solar cell parameters of all the examples and comparative examples of the present application are summarized in Table 1 below:

[0119] Table 1

[0120]

[0121] Test Example

[0122] (1) Reaction of refractory metal with iodine vapor

[0123] The refractory metals are molybdenum and tungsten, and the following test method is used:

[0124] A. Place tungsten boat and molybdenum boat with iodine element under a petri dish, and use a heating table to heat, set the temperature to 55°C, heat for 0.5 h, 1.5 h and 2 h, and cool to room temperature (in air).

[0125] B. Soak the boat heated for 2 h in deionized water for 30 min.

[0126] C. Perform XPS detection on the sample obtained after heating and cooling.

[0127] As shown in Figures 1-3 , XPS of molybdenum boat after heating at 55°C for 0.5 h. Figure 1 XPS of molybdenum boat after heating at 55°C for 1.5 h. Figure 2 XPS of molybdenum boat after heating at 55°C for 2 h and soaking in deionized water for 0.5 h. Figure 3

[0128] As can be seen, after the molybdenum boat is iodine smoked at 55°C for 0.5 h, the sample is composed of I, O and Mo elements, so there may be some oxidized substances formed with Mo metal in the sample; however, as can be seen from the figure, the peak of I 3d is not obvious, so it cannot be judged that iodine and molybdenum metal have combined to form new substances. Figure 1

[0129] As can be seen, after the molybdenum boat is iodine smoked at 55°C for 0.5 h, the sample is composed of I, O and Mo elements, so there may be some oxidized substances formed with Mo metal in the sample; however, as can be seen from the figure, the peak of I 3d is not obvious, so it cannot be judged that iodine and molybdenum metal have combined to form new substances.Figure 2 It can be seen that the molybdenum boat after iodine fumigation at 55°C for 1.5h, the sample is composed of I, O, Mo elements, so there may be some oxidation state substances formed with Mo metal in the sample; compared with Figure 1 , the peak of I 3d is enhanced, so it is judged that the metal molybdenum after iodine fumigation for 1.5h may form new substances on the surface with the increase of time.

[0130] Figure 3 It can be seen that the molybdenum boat after iodine fumigation at 55°C for 2h and soaking in deionized water for 0.5h, the sample is composed of I, O, Mo elements, but the peak of I 3d in the figure almost disappears, and the atomic content of iodine element is only 0.33% according to the analysis by jade software, so the iodine on the molybdenum boat after soaking in deionized water will be soaked off, and the iodine on the surface cannot be combined with molybdenum to form a firm compound by heating. Because the molybdenum boat has the characteristics of high melting point, high strength and high corrosion resistance, so the reaction with iodine element by heating at 55°C is not obvious.

[0131] As shown in Figures 4-6 , the XPS of the tungsten boat after heating at 55°C for 0.5h is shown in Figure 4 . Figure 5 The XPS of the tungsten boat after heating at 55°C for 1.5h is shown in Figure 6 . The XPS of the tungsten boat after heating at 55°C for 2h and soaking in deionized water for 0.5h is shown in

[0132] Figure 4 It can be seen that the tungsten boat after iodine fumigation at 55°C for 0.5h, the sample is composed of I, O, W elements, so there may be some oxidation state substances formed with Mo metal in the sample; it can be seen in the figure that the peak of I 3d is not high, but it can be seen that there is iodine element in the sample. Therefore, it is inferred that the tungsten boat after iodine fumigation at 55°C for 0.5h may form new oxidation state substances.

[0133] Figure 5 It can be seen that the tungsten boat after iodine fumigation at 55°C for 1.5h, the sample is composed of I, O, W elements, so there may be some oxidation state substances formed with W metal in the sample; compared with Figure 4 , the peak of I 3d is weakened, so it is judged that the iodine attached to the tungsten boat evaporates with the increase of time, but a part of it still remains on the tungsten boat. Therefore, the tungsten boat after iodine fumigation at 55°C cannot form stable new substances.

[0134] Figure 6As can be seen, after the tungsten boat is iodine fumigated at 55℃ for 2h and soaked in deionized water for 0.5h, the sample is composed of O and W elements, the I3d peak in the figure almost disappears, and the jade software analysis shows that the content of iodine element in the sample is 0, so the iodine on the tungsten boat after soaking in deionized water will be soaked off, and the surface iodine and molybdenum cannot be combined into a firm compound by heating. Because the tungsten boat has good electrical conductivity, thermal conductivity, high temperature resistance, wear resistance and corrosion resistance and other properties. Therefore, the reaction of 55℃ heating with iodine element is not obvious, and a stable compound cannot be formed.

[0135] The poorly soluble metal is nickel (φ8-13mm, Ni≥99.99%, manufacturer: North Science and Materials), and the following test method is used:

[0136] A1, place the high-purity nickel particles and iodine element under the culture dish, use the heating table to heat, set the temperature to 55℃, and heat for 2h, 4h, 6h and 8h, and cool to room temperature (in air).

[0137] B1, the high-purity nickel particles iodine fumigated for 8h are heated again on the heating table for 2h.

[0138] C1, the sample after the experiment is detected by XRD and XPS.

[0139] As shown in Figures 7-8 , the XRD comparison chart of the high-purity nickel metal particles iodine fumigated for different times. Figure 7 is the XPS chart of the high-purity nickel metal particles iodine fumigated and then heated for 2h. Figure 8

[0140] Figure 7 As can be seen, compared with the XRD standard diffraction peak of metal nickel, when the fumigation time is 2h, the diffraction peak does not change; when the fumigation time is 4h, new diffraction peaks appear at 31.68°, 38.64°, 55.7° and 69.7°, and the diffraction peak of metal nickel disappears, and the reaction of metal nickel and iodine vapor forms nickel iodide; with the increase of fumigation time, the diffraction peak returns to the state of metal nickel after 6h, 8h and reheating. Therefore, it is judged that under the condition of 55℃, nickel iodide can be formed when the fumigation time is 4h, but with the increase of heating time, the compound decomposes.

[0141] Figure 8 As can be seen, from the full spectrum, I and Ni elements are detected in the sample, and the jade software analysis does not detect the existence of nickel iodide, combined with Figure 7 , the nickel iodide formed on the surface of the high-purity nickel particles iodine fumigated is extremely small and even negligible.

[0142] Therefore, it can be concluded that the reaction of the poorly soluble metal with iodine element is not obvious. ​

[0143] (2) Stability test

[0144] The photoelectric conversion efficiency of the battery was tested under standard simulated sunlight emitting a standard sunlight (spectrum AM1.5G, irradiance 1000 W / m 2 ); the photoelectric conversion efficiency of the device after 1000 h of light was tested; the photoelectric conversion efficiency (PCE) of the solar cell after 1000 h of use was tested under the condition of relative humidity RH 85%, 85°C, and the PCE was calculated by the following formula:

[0145]

[0146] Wherein PCE is the photoelectric conversion efficiency, Voc is the open circuit voltage, Jsc is the short circuit current density, FF is the fill factor, and Pin is the input power.

[0147] The results are shown in Table 2 below.

[0148] Table 2

[0149]

[0150] The technical features of the above embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not contradict, they should be considered as within the scope of the present disclosure.

[0151] The above embodiments only express several implementation manners of the present application, and the description is specific and detailed, but it should not be understood as a limitation on the patent scope of the application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A solar cell, characterized in that, It includes a substrate and an electrode layer disposed on one side of the substrate, wherein the substrate includes a perovskite absorber layer; and the electrode layer is a refractory metal electrode layer.

2. The solar cell according to claim 1, characterized in that, The refractory metal electrode layer is a single electrode layer or a composite electrode layer, and the refractory metal in the refractory metal electrode layer includes at least one of Mo, Cr, W, and Ni.

3. The solar cell according to claim 2, characterized in that, The composite electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is disposed between the substrate and the second electrode layer. The second electrode layer is a Ni layer. The first electrode layer and the second electrode layer are made of different materials.

4. The solar cell according to claim 3, characterized in that, The thickness H1 of the first electrode layer is 10 nm to 100 nm, and the thickness H2 of the second electrode layer is 200 nm to 1000 nm.

5. The solar cell according to claim 2, characterized in that, The mass percentage of Ni is 30% to 100%, with the single electrode layer as the absolute mass. Preferably, the mass percentage of Ni is 60% to 90%.

6. The solar cell according to any one of claims 1-5, characterized in that, The solar cell further includes a transparent conductive electrode layer, which is disposed between the substrate and the refractory metal electrode layer.

7. The solar cell according to any one of claims 1-5, characterized in that, The solar cell further includes an Ag or Cu electrode layer, which is disposed on the side of the refractory metal electrode layer away from the substrate.

8. The solar cell according to any one of claims 1-5, characterized in that, The substrate further includes at least one of a conductive substrate layer, a hole transport layer, and an electron transport layer.

9. A method for preparing a solar cell according to any one of claims 1-8, characterized in that, Includes the following steps: An electrode layer is formed on one side of a substrate to obtain a solar cell; wherein the substrate includes a perovskite absorber layer; and the electrode layer includes a refractory metal electrode layer.

10. An electrical appliance, characterized in that, The electrical device includes the solar cell according to any one of claims 1-8.

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