Optical apparatus and electronic apparatus

Abstract

Provided is an optical device having high light utilization efficiency. The optical device comprises a first optical path, a second optical path and a third optical path, and the first optical path, the second optical path and the third optical path converge at an emission side. The first optical path and the second optical path are light paths using the display panel as a light source, and the third optical path is a light path using external light as a light source. On the emission side of the optical device, the light of the first optical path and the light of the third optical path are first linearly polarized light, and the light of the second optical path is second linearly polarized light. The vibration directions of the first linearly polarized light and the second linearly polarized light are orthogonal, and the first linearly polarized light and the second linearly polarized light can be converged by a reflective polarizer.

Description

TECHNICAL FIELD

[0001] One embodiment of the present application relates to an optical device.

[0002] Note that one embodiment of the present application is not limited to the technical field described above. The technical field of one embodiment of the application disclosed in this specification and the like relates to an object, a method, or a manufacturing method. One embodiment of the present application relates to a process, a machine, manufacture, or a composition of matter. Specifically, according to one embodiment of the present application disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a method for driving any of them, or a method for manufacturing any of them can be given.

[0003] Note that in this specification and the like, a semiconductor device generally means a device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one embodiment of a semiconductor device. In addition, an electronic device, a display device, an imaging device, and an electronic appliance can include a semiconductor device. BACKGROUND

[0004] As an electronic device applied to XR (a general term for Virtual Reality (VR), Augmented Reality (AR), or Mixed Reality (MR)), a goggle-type device and a glasses-type device have been developed.

[0005] As a display panel which can be used for the above electronic device, a display device including a liquid crystal element, a display device including an organic EL (Electro Luminescence) element or a light-emitting diode (LED), or the like can be typically given.

[0006] Since a display device including an organic EL element does not need a backlight required for a liquid crystal display device, a thin, light, high-contrast display device with low power consumption can be implemented. For example, Patent Document 1 discloses an example of a display device using an organic EL element.

[0007] In addition, as a display device suitable for a goggle-type device and a glasses-type device, Patent Document 2 discloses an example of a high-luminance display device in which light extraction efficiency is improved by providing a microlens array.

[0008] [Prior Art Documents] [Patent Documents] [Patent Document 1] Japanese Published Patent Application No. 2018-107444 [Patent Document 2] WO 2022 / 038452. SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION As an optical see-through glasses-type device used as an AR-compatible device or the like, it is required to achieve device miniaturization and lightness and to have visibility of display that is not inferior to external light.

[0010] The above glasses-type device uses a selective reflection-type optical device that uses polarized light. Although the selective reflection-type optical device is continuously miniaturized and lightened, there is a problem of low light use efficiency because of the use of polarized light.

[0011] In view of the above problem, it is attempted to improve the visibility of display by improving the luminance of a display device. However, since the display device is also required to be high-resolution with a reduction in pixel size, the difficulty of high luminance of the display device or display element is continuously increasing.

[0012] In addition, when a high voltage or the like is applied to the display element to improve the luminance, it is possible to cause an increase in power consumption and a decrease in reliability of the display element. Therefore, there is a demand for an optical device with high light use efficiency.

[0013] Therefore, one of objects of one embodiment of the present application is to provide an optical device with good visibility of display. In addition, one of objects of one embodiment of the present application is to provide an optical device with high light use efficiency. In addition, one of objects of one embodiment of the present application is to provide an electronic device including the optical device. In addition, one of objects of one embodiment of the present application is to provide an electronic device with low power consumption. In addition, one of objects of one embodiment of the present application is to provide a novel electronic device.

[0014] MEANS FOR SOLVING PROBLEMS Note that the description of these objects does not preclude the existence of other objects. Note that one embodiment of the present application does not necessarily achieve all the above-described objects. Note that objects other than the above can be extracted from the description, drawings, claims, and the like.

[0015] One embodiment of the present application relates to an optical device with high light use efficiency.

[0016] One embodiment of the present application is an optical device including a first optical path, a second optical path, and a third optical path, in which the first optical path and the second optical path have a common starting point, the third optical path has a different starting point from the first optical path and the second optical path, the first to third optical paths converge at respective ending points, light emitted from the ending point of the first optical path and light emitted from the ending point of the third optical path are first linearly polarized light, and light emitted from the ending point of the second optical path is second linearly polarized light, the vibration directions of the first linearly polarized light and the second linearly polarized light being orthogonal to each other.

[0017] A reflective polarizing plate, a first phase difference plate, and a half mirror are provided on the first optical path, a reflective polarizing plate, a second phase difference plate, and a mirror are provided on the second optical path, and a linear polarizing plate, a third phase difference plate, a half mirror, a first phase difference plate, and a reflective polarizing plate are provided on the third optical path. The starting point of the first optical path and the second optical path is the reflective polarizing plate, the starting point of the third optical path is the linear polarizing plate, and the ending point of the first to third optical paths is the reflective polarizing plate.

[0018] One embodiment of the present application is an optical device including a reflective polarizing plate, a first phase difference plate, a second phase difference plate, a third phase difference plate, a linear polarizing plate, a half mirror, and a mirror. The reflective polarizing plate is arranged so that straight light from a light source is incident at an oblique angle. In the direction of travel of light reflected by the reflective polarizing plate, the first phase difference plate, the half mirror, the second phase difference plate, and the linear polarizing plate are arranged in this order from the side of the reflective polarizing plate. In the direction of travel of light transmitted through the reflective polarizing plate, the third phase difference plate and the mirror are arranged in this order from the side of the reflective polarizing plate.

[0019] One embodiment of the present application is an optical device including a reflective polarizing plate, a phase difference plate, a linear polarizing plate, a half mirror, and a mirror. The reflective polarizing plate is arranged so that straight light from a light source is incident at an oblique angle. In the direction of travel of light reflected by the reflective polarizing plate, the half mirror, the phase difference plate, and the linear polarizing plate are arranged in this order from the side of the reflective polarizing plate. In the direction of travel of light transmitted through the reflective polarizing plate, the mirror is arranged. The reflective polarizing plate can include a cholesteric liquid crystal.

[0020] The half mirror and the reflective polarizing plate can have a curved surface in which the side of the reflective polarizing plate is concave.

[0021] A lens can be provided on one or both of the side of the light source and the side of the reflective polarizing plate and the side of the mirror and the side of the reflective polarizing plate.

[0022] An electronic device including the above-described optical device and including a display panel including an organic EL element as a light source is one embodiment of the present application.

[0023] Effects of Invention According to one embodiment of the present application, an optical device with good display visibility can be provided. In addition, an optical device with high light use efficiency can be provided. In addition, an electronic device including the optical device can be provided. In addition, an electronic device with low power consumption can be provided. According to one embodiment of the present application, a novel electronic device can be provided.

[0024] Note that the description is not intended to limit the effects to what is described in the specification. For example, an effect also occurs that a novel electronic device can be provided according to one embodiment of the present application.

[0025] BRIEF DESCRIPTION OF DRAWINGS Figure 1 FIG. 1 is a diagram illustrating an electronic device.

[0026] Figure 2A FIG. 2 is a diagram illustrating an optical device. Figure 2B

[0027] Figure 3A FIG. 3 is a diagram illustrating light use efficiency of an optical device. Figure 3B

[0028] Figure 4A FIG. 4 is a diagram illustrating an optical device. Figure 4B

[0029] Figure 5A FIG. 5 is a diagram illustrating an optical device. Figure 5B

[0030] Figure 6 FIG. 6 is a diagram illustrating a reflective plate having a cholesteric liquid crystal.

[0031] Figures 7A to 7E FIG. 7 is a diagram illustrating a display panel.

[0032] Figure 8 FIG. 8 is a diagram illustrating a glasses-type device.

[0033] Figures 9A to 9C FIG. 9 is a diagram illustrating a structure example of a display panel.

[0034] Figure 10A FIG. 10 is a diagram illustrating a structure example of a display panel. Figure 10B

[0035] Figures 11A to 11F FIG. 11 is a diagram illustrating a structure example of a pixel.

[0036] Figure 12A FIG. 12 is a diagram illustrating a structure example of a display panel. Figure 12B

[0037] Figure 13 FIG. 13 is a diagram illustrating a structure example of a display panel.​​​​​​

[0038] Figure 14 FIG. 1 is a diagram illustrating a structure example of a display panel.

[0039] Figure 15 FIG. 2 is a diagram illustrating a structure example of a display panel.

[0040] Figure 16 FIG. 3 is a diagram illustrating a structure example of a display panel.

[0041] Figure 17 FIG. 4 is a diagram illustrating a structure example of a display panel.

[0042] Figure 18 FIG. 5 is a diagram illustrating a structure example of a display panel.

[0043] Figure 19A Figure 19B FIG. 6 is a diagram illustrating a transistor.

[0044] Figure 20A Figure 20B FIG. 7 is a diagram illustrating a transistor.

[0045] Embodiment of the Invention Embodiments are described in detail with reference to the accompanying drawings. Note that the present application is not limited to the following embodiments and it is readily apparent to those skilled in the art that a variety of changes can be made without departing from the spirit and scope of the application. Therefore, the present application should not be interpreted as being limited to the content of the embodiments shown below. Note that, in the structure of the present application described below, the same portions or portions having similar functions are denoted with the same reference numerals in different drawings, and repetitive description is omitted. Note that, in some cases, the hatching of the same components is omitted or changed as appropriate in different drawings.

[0046] In addition, even when one component is illustrated on a circuit diagram, the component can be formed using a plurality of components if there is no problem in function. For example, a plurality of transistors functioning as a switch can be connected in series or in parallel. Further, a capacitor can be divided and arranged at a plurality of positions.

[0047] Further, one conductor has a plurality of functions such as a wiring, an electrode, and a terminal in some cases, and a plurality of names are used for the same component in some cases in this specification. Further, even when direct connection between components is illustrated on a circuit diagram, in some cases, the components are actually connected through one or more conductors, and such a structure is included in the category of direct connection in this specification.

[0048] (Embodiment 1) ​​In this embodiment, an optical device and an electronic device of one embodiment of the present application are described.

[0049] One embodiment of the present application is an electronic device such as an optical see-through glasses-type device and an optical device used for the electronic device.

[0050] The optical device includes a first light path, a second light path, and a third light path, which are merged at the end points of the light paths. The first and second light paths are paths of light whose light source is a display panel, and the third light path is a path of light whose light source is external light. In an electronic device using the optical device of one embodiment of the present application, display of the display panel can be viewed while being overlaid with an external view.

[0051] First linearly polarized light is emitted from the end point of the first light path, and second linearly polarized light is emitted from the end point of the second light path. The first linearly polarized light and the second linearly polarized light have a relationship in which the directions of vibration are orthogonal to each other. These polarized lights can be merged by using a reflective polarizing plate.

[0052] In a conventional optical device used for an optical see-through glasses-type device or the like, the light use efficiency is low because only one of two light paths is used by a beam splitter or the like, and thus the luminance of a display panel needs to be increased. For example, although the luminance can be increased by applying a higher voltage to a display element, there are problems of increasing the power consumption of the display panel and accelerating deterioration of the display element.

[0053] The optical device of one embodiment of the present application has a structure in which both the first light path and the second light path are merged by the action of a reflective polarizing plate, and thus the light use efficiency of light emitted from the display panel can be increased. By increasing the light use efficiency of the optical device, display of the display panel can be performed with low luminance, and thus the power consumption can be reduced and the display element can be made long-lived.

[0054] Figure 1 is a perspective view of an electronic device of one embodiment of the present application, which shows a display panel and an optical device included in the electronic device. Note that the shapes of the respective components shown in FIG. 1A are one example. Figure 1 The shapes of the respective components shown in FIG. 1A are one example.

[0055] The optical device 60 includes the reflective polarizing plate 30, the optical unit 40, and the optical unit 50. Note that the reflective polarizing plate 30 has an action such as polarization conversion by being combined with the components included in both the optical unit 40 and the optical unit 50. Thus, the reflective polarizing plate 30 can also be regarded as each component of the optical unit 40 and the optical unit 50.

[0056] The reflective polarizing plate 30 is flat and can be disposed at an angle at which light straight from the display panel 20 as the first light source is obliquely incident to the reflecting surface. Specifically, the reflective polarizing plate 30 is disposed in such a manner that the incident angle of light emitted perpendicularly from the display surface of the display panel 20 is greater than 0° and less than 90°. Note that even within this range of angles, the range in which the constituent elements included in the optical device 60 intercept the light path is not suitable, so the angle can be set to 20° or more and 70° or less, preferably 30° or more and 60° or less, more preferably 40° or more and 50° or less, and typically 45°. The closer the incident angle is to 45°, the easier the optical design of the constituent element arrangement and the like.

[0057] The reflective polarizing plate 30 has the function of a beam splitter and can split the light incident to the reflective polarizing plate 30 into two beams: reflected light and transmitted light.

[0058] The optical unit 40 can be disposed in the direction of travel of the light reflected by the reflective polarizing plate 30. The optical unit 40 can have a structure in which a phase difference plate 41, a half mirror 42, a phase difference plate 43, and a linear polarizing plate 44 are disposed in this order from the side of the reflective polarizing plate 30.

[0059] The optical unit 50 can be disposed in the direction of travel of the light transmitted through the reflective polarizing plate 30. The optical unit 50 can have a structure in which a phase difference plate 51 and a mirror 52 are disposed in this order from the side of the reflective polarizing plate 30.

[0060] Note that the combination of the polarizing plate and the phase difference plate (the reflective polarizing plate 30 and the phase difference plate 41, the reflective polarizing plate 30 and the phase difference plate 51, the phase difference plate 43 and the linear polarizing plate 44) is also referred to as a circular polarizing plate that converts non-polarized light into circularly polarized light.

[0061] The two lights split by the reflective polarizing plate 30 are reflected by the optical unit 40 and the optical unit 50, respectively, and the directions in which the light returns to the reflective polarizing plate 30 converge at the reflective polarizing plate 30 and are incident to the eye 10. In addition, the light of the second light source is incident to the optical unit 40 from the side of the linear polarizing plate 44, and the two lights converge at the reflective polarizing plate 30 and are incident to the eye 10.

[0062] Thus, the user can see the light of the first light source and the second light source superimposed. Note that the second light source can be external light (an external scene, etc.) that the user sees at the place of use.

[0063] In addition, the optical device 60 can also be provided with other constituent elements such as lenses. In addition, although an example in which the constituent elements adjacent in the optical unit 40 and the optical unit 50 are disposed close to each other is shown, the present technology is not limited thereto. For example, the constituent elements adjacent to each other can be disposed apart. In addition, a support for the constituent elements can be provided as needed.

[0064] In order to realize the structure in which the adjacent constituent elements are close to each other, it is preferable to use an optical adhesive having high transmittance for the wavelength of light to be used (e.g., the wavelength range of visible light or the wavelength range of blue light to red light) and no absorption and birefringence of a specific polarized light to bond the constituent elements together. Alternatively, another constituent element which is in contact with one constituent element can be formed by a method such as coating without bonding. Alternatively, the two constituent elements can be in contact with each other without an adhesive or the like interposed therebetween. Alternatively, a gap can be provided therebetween.

[0065] In the conventional optical device, only one of the two optical paths generated by a beam splitter or the like is used, and the light of the other optical path is not used. The optical device 60 of one embodiment of the present application includes two optical paths with the display panel 20 as a light source, and the light use efficiency is improved by aligning the imaging positions of the two optical paths. By converting the light emitted from the display panel 20 into linearly polarized light or circularly polarized light, the two optical paths can be merged at the end point by using constituent elements provided in the optical paths to selectively reflect and transmit.

[0066] In addition, part of the constituent elements of the optical device 60 also functions as a constituent element for introducing external light, and thus the number of constituent elements constituting the optical device 60 can be reduced. Thus, the optical device and the electronic device can be miniaturized.

[0067] Figure 2A And Figure 2B is a cross-sectional view of the optical device 60, and illustrates part of an optical path. The optical device 60 includes an optical path LP1 and an optical path LP2 with the display panel 20 as a light source and an optical path LP3 for introducing external light. Figure 2A illustrates the optical path LP1 and the optical path LP2, Figure 2B illustrates the optical path LP3.

[0068] Note that in this specification and the like, an optical path of an optical device refers to a path of light generated between constituent elements included in the optical device. For example, in an optical device, when a structure in which light enters from the outside into a constituent element A and exits to the outside from a constituent element B is employed, the optical path is a path generated between the constituent element A and the constituent element B, the constituent element A is referred to as a start point of the optical path, and the constituent element B is referred to as an end point of the optical path. Alternatively, the constituent element A can be referred to as a start point of the optical device, and the constituent element B can be referred to as an end point of the optical device. Note that a path of light between a light source and the constituent element A is also referred to as an optical path of the optical device in some cases. In addition, an optical path between the constituent element B and a light arrival portion is also referred to as an optical path of the optical device in some cases.

[0069] First, the optical path LP1 generated in the direction in which the light emitted from the display panel 20 as the first light source is reflected by the reflective polarizing plate 30 is described. The optical unit 40 can be disposed in the direction in which the light reflected by the reflective polarizing plate 30 travels.

[0070] The part of the light emitted from the display panel 20 is reflected by the reflective polarizing plate 30, transmitted through the phase difference plate 41, and reflected by the half mirror 42. The light reflected by the half mirror 42 is transmitted through the phase difference plate 41 and the reflective polarizing plate 30. In the paths of these lights, the path that starts from the reflective polarizing plate 30 and ends at the reflective polarizing plate 30 is the optical path LP1. The light that has passed through the optical path LP1 advances to the destination (the eye 10) together with the light that has passed through the optical path LP2 and the light that has passed through the optical path LP3.

[0071] As the display panel 20, a liquid crystal panel including a liquid crystal element, an organic EL panel including an organic EL element, or an LED panel including a Micro LED, or the like can be used. In particular, an organic EL panel that is self-emissive and easily forms a high-definition display portion is preferably used. Note that, in this specification and the like, a Micro LED refers to a light-emitting diode having a chip area of 10,000 μm 2 The following light-emitting diode. In addition, in the LED panel, not limited to the Micro LED, for example, a light-emitting diode having a chip area of more than 10,000 μm 2 and 1 mm 2 The following light-emitting diode (also referred to as a Mini LED). Note that the display panel 20 used in one embodiment of the present application preferably emits unpolarized light.

[0072] The reflective polarizing plate 30 can reflect linearly polarized light in which the vibration direction coincides with the reflection axis and transmit linearly polarized light orthogonal to the reflection axis with respect to the 360º omnidirectional vibration light incident. Since the reflective polarizing plate 30 is disposed so that light is incident at an oblique angle, a material having the above-described function at the angle at which it is disposed is used as the reflective polarizing plate 30. As the reflective polarizing plate, for example, a wire grid polarizing plate or a dielectric multilayer film, or the like can be used.

[0073] Note that, in this case, the case where the reflection axis of the reflective polarizing plate 30 is 0° is described, but 0° is not an absolute value but a reference value. That is, the polarization plane of the linearly polarized light reflected by the reflective polarizing plate 30 is considered to be 0°. Therefore, for example, the 90° linearly polarized light in the present embodiment refers to linearly polarized light in which the polarization plane of the linearly polarized light reflected by the reflective polarizing plate 30 is rotated by 90°.

[0074] The phase retardation plate 41 has the function of converting linearly polarized light into circularly polarized light. Here, a λ / 4 plate (1 / 4 wave plate) is used as the phase retardation plate 41. The λ / 4 plate is superimposed on the reflecting polarizer 30 such that the angle between the slow axis of the λ / 4 plate and the axis of the linearly polarized light emitted from the reflecting polarizer 30 is 45°, thereby producing right-handed circularly polarized light (right-handed circularly polarized light). Alternatively, the λ / 4 plate is superimposed on the reflecting polarizer 30 such that the angle between the slow axis of the λ / 4 plate and the axis of the linearly polarized light emitted from the reflecting polarizer 30 is -45°, thereby producing left-handed circularly polarized light (left-handed circularly polarized light). Furthermore, as the opposite function described above, the phase retardation plate 41 also has the function of converting circularly polarized light into linearly polarized light.

[0075] As the semi-reflective mirror 42, a metal film or a dielectric multilayer film can be used, for example. The semi-reflective mirror 42 preferably has positive power to focus the light reflected by the reflective polarizer 30 towards the eye 10. Therefore, the semi-reflective mirror 42 preferably has a concave curved surface on one side of the reflective polarizer 30. Furthermore, the visible light transmittance and reflectance of the semi-reflective mirror 42 can, for example, be around 50%, and one of the transmittance and reflectance can be more than 20% and less than 80%.

[0076] In optical unit 40, such as Figure 1 As shown, all the constituent elements can be arranged closely together. Therefore, although the case shown is that the constituent elements other than the semi-reflective mirror 42 also have a concave curved shape, the constituent elements other than the semi-reflective mirror 42 can also be, for example, flat plate shapes. In addition, when light can be focused in the direction of the eye 10 using the constituent elements other than the semi-reflective mirror 42 included in the optical device 60, the semi-reflective mirror 42 can also be flat plate shapes.

[0077] Reference Figure 2A The following details the polarization states of the optical path LP1 and the optical paths before and after it. Note that the following example illustrates right-circularly polarized light emitted from the phase difference plate 41, but it can also be left-circularly polarized light. Additionally, the reflection axis of the reflective polarizer 30 is 0°, and the transmission axis is 90°, while the transmission axis of the linear polarizer 44 is 90°.

[0078] Light emanating from the display panel 20, vibrating in all 360° directions, is incident on the reflective polarizer 30. The reflection axis of the reflective polarizer 30 is 0°, and 0° linearly polarized light is emitted from the reflective polarizer 30.

[0079] The 0° linearly polarized light emitted from the reflective polarizer 30 is incident on the phase retardation plate 41 and converted into right circularly polarized light. The right circularly polarized light emitted from the phase retardation plate 41 is reflected by the half-reflecting mirror 42 and reversed into left circularly polarized light, which is then incident on the phase retardation plate 41.

[0080] The left circularly polarized light incident on the phase difference plate 41 is converted into 90° linearly polarized light and passes through the reflective polarizer 30 with a transmission axis of 90° to the eye 10. That is, 90° linearly polarized light is emitted from the end of the optical path LP1.

[0081] Furthermore, the right-circularly polarized light passing through the semi-reflecting mirror 42 is converted into 0° linearly polarized light by the phase retardation plate 43. The 0° linearly polarized light emitted from the phase retardation plate 43 is then incident on the linearly polarizer 44 with a transmission axis of 90° and is absorbed. Therefore, stray light generated due to unnecessary reflections can be suppressed.

[0082] Next, the light path LP2 generated by the light emitted by the display panel 20 of the first light source in the direction of passing through the reflective polarizer 30 will be explained. The optical unit 50 can be arranged in the direction of light travel through the reflective polarizer 30.

[0083] Part of the light emitted from the display panel 20 (light source) passes through the reflective polarizer 30, then through the phase retardation plate 51, and is reflected by the reflector 52. The light reflected by the reflector 52 passes through the phase retardation plate 51 and is reflected by the reflective polarizer 30. Among these light paths, the path that starts and ends at the reflective polarizer 30 is called light path LP2. The light passing through light path LP2 merges with the light passing through light path LP1 and light passing through light path LP3 and proceeds towards the receiving part (eye 10).

[0084] For an explanation of the phase retardation plate 51, please refer to the explanation of the phase retardation plate 41 above. The reflector 52 is a total reflection mirror, which can be formed of a metal film or a dielectric film, etc.

[0085] In optical unit 50, such as Figure 1 As shown, all the constituent elements can be arranged closely together. Therefore, although the case where the constituent elements other than the reflector 52 are shown also having a concave curved shape, the constituent elements other than the reflector 52 can also be, for example, flat plate shapes. In addition, when light can be focused in the direction of the eye 10 by the constituent elements other than the reflector 52 included in the optical device 60, the reflector 52 can also be flat plate shapes.

[0086] Reference Figure 2A This section details the polarization states of the optical path LP2 and the optical paths before and after it. Note that, relative to the reflecting polarizer 30, the angle of the slow axis of the phase retardation plate 41 is the same as the angle of overlap of the slow axes of the phase retardation plate 51.

[0087] Light emanating from the display panel 20, vibrating in all 360° directions, is incident on the reflective polarizer 30. The transmission axis of the reflective polarizer 30 is 90°, and 90° linearly polarized light is emitted from the reflective polarizer 30.

[0088] The 90° linearly polarized light emitted from the reflective polarizer 30 is converted into left circularly polarized light by the phase difference plate 51. The left circularly polarized light emitted from the phase difference plate 51 is reflected by the mirror 52, inverted into right circularly polarized light, and incident on the phase difference plate 51.

[0089] The right circularly polarized light incident on the phase difference plate 51 is converted into 0° linearly polarized light, and is reflected by the reflective polarizer 30 having the reflection axis 0° to be incident on the eye 10. That is, the 0° linearly polarized light is emitted from the end point of the optical path LP2.

[0090] Next, the optical path LP3 which is a path of light using external light as a second light source will be described. The external light (light vibrating in all directions of 360°) transmits through the linear polarizer 44, the phase difference plate 43, the half mirror 42, the phase difference plate 41, and the reflective polarizer 30. The path from the start point of the linear polarizer 44 to the end point of the reflective polarizer 30 among the paths of these lights is the optical path LP3. The light passing through the optical path LP3 advances to the destination (the eye 10) together with the light passing through the optical path LP1 and the light passing through the optical path LP2.

[0091] As for the phase difference plate 43 and the linear polarizer 44, the description of the phase difference plate 41 and the reflective polarizer 30 can be referred to. Note that the linear polarizer does not have a reflection effect on polarized light, but has an effect of transmitting linearly polarized light having a transmission axis coinciding with a vibration direction and absorbing other polarized light.

[0092] Reference Signs List Figure 2B Detailed contents of the polarization state of the optical path LP3 and the optical paths before and after the optical path LP3 will be described. The external light (light vibrating in all directions of 360°) is first incident on the linear polarizer 44. Since the transmission axis of the linear polarizer 44 is 90°, 90° linearly polarized light is emitted from the linear polarizer 44, and other light is absorbed by the linear polarizer 44.

[0093] The 90° linearly polarized light emitted from the linear polarizer 44 is incident on the phase difference plate 43 and is converted into left circularly polarized light. The left circularly polarized light emitted from the phase difference plate 43 transmits through the half mirror 42 and is incident on the phase difference plate 41.

[0094] The left circularly polarized light incident on the phase difference plate 41 is converted into 90° linearly polarized light, and transmits through the reflective polarizer 30 having the transmission axis of 90° to be incident on the eye 10. That is, the 90° linearly polarized light is emitted from the end point of the optical path LP3.

[0095] Note that the left circularly polarized light emitted from the phase difference plate 43 is reflected by the half mirror 42, inverted into right circularly polarized light, and incident on the phase difference plate 43. The right circularly polarized light incident on the phase difference plate 43 is converted into 0° linearly polarized light and is incident on the linear polarizer 44 having the transmission axis of 90°, and is absorbed. Thus, stray light due to unnecessary reflection or the like can be suppressed.

[0096] The light paths LP1, LP2, and LP3 can be converged together by the reflective polarizing plate 30, whereby the images constituted by the light passing through the respective light paths can be overlapped. The most remarkable effect in one embodiment of the present application is that the light paths LP1 and LP2 originating from the same light source are converged together by the reflective polarizing plate 30, whereby the light use efficiency is improved.

[0097] The above structure can be realized by appropriately utilizing the transmission reflection characteristics of the reflective polarizing plate 30: linearly polarized light which has transmitted through the reflective polarizing plate 30 is generated in the optical unit 40 and is returned to the reflective polarizing plate 30, and linearly polarized light which has been reflected by the reflective polarizing plate 30 is generated in the optical unit 50 and is returned to the reflective polarizing plate 30. That is, one embodiment of the present application is characterized in that two linearly polarized lights whose vibration directions are in an orthogonal relationship are emitted from the optical device 60.

[0098] Next, the light use efficiency in the optical device 60 will be described with reference to Figure 3A and Figure 3B Note that the unclear surface reflection and absorption of light and the collapse of polarized light in each constituent element are not taken into account here. Further, the transmittance of the half mirror 42, the reflectance, and the transmittance of light (natural light) of 360° omnidirectional vibration when incident on the linear polarizing plate 44 are 50%. Further, the reflectance and the transmittance of polarized light corresponding to the transmission reflection characteristics of the reflective polarizing plate 30, the transmittance of the phase difference plates 41, 43, and 51, and the reflectance of the mirror 52 are all 100%.

[0099] First, the light use efficiency of the light paths LP1 and LP2 will be described with reference to Figure 3A Note that the values shown in the drawing are relative values of each position of the light path when the amount of light emitted from the display panel 20 is 1.

[0100] The light (amount of light 1) emitted from the display panel 20 is polarized by the reflective polarizing plate 30, and the amounts of light of the reflection side (light path LP1) and the transmission side (light path LP2) are 0.5, respectively.

[0101] In the light path LP1, the amount of light is attenuated to 0.25 by reflection by the half mirror 42 whose reflectance is 50%, and then the light is transmitted through the reflective polarizing plate 30 while maintaining the amount of light. Therefore, the amount of light reaching the eye 10 is 0.25.

[0102] In the light path LP2, there is no element which greatly attenuates the amount of light, and the amount of light is reflected by the reflective polarizing plate 30 while maintaining the amount of light at 0.5. Therefore, the amount of light reaching the eye 10 is 0.5. That is, the amount of light reaching the eye is 0.75 when the amount of light of the light path LP1 is added.

[0103] Next, the light use efficiency in the optical device 60 will be described with reference to Figure 3BThis demonstrates the light utilization efficiency of optical path LP3.

[0104] Of the light incident from the outside (light quantity 1), all light except the transmitted light is absorbed by the linear polarizer 44, resulting in a light quantity of 0.5. Furthermore, due to reflection by the semi-reflective mirror 42 with a reflectivity of 50%, the light quantity is attenuated to 0.25, and then transmitted through the reflective polarizer 30 while maintaining this light quantity. Therefore, the light quantity reaching the eye 10 is 0.25. Note that even though the light quantity is 0.25, because the absolute value of the external light quantity is large, it can be said that the actual light quantity is sufficient.

[0105] In existing optical devices, the light source using a display panel only utilizes the optical path equivalent to optical path LP1, and the light utilization efficiency is only about 0.25 when the light intensity of the light source is 1. However, the light utilization efficiency of an optical device according to one aspect of the present invention is estimated to be 0.75. Therefore, the light utilization efficiency of the display panel as a light source using an optical device according to one aspect of the present invention is about three times that of existing optical devices. Therefore, compared with existing optical devices, the visibility of the display panel can be improved.

[0106] Note that the light passing through optical paths LP1 and LP2 constitutes the image; therefore, the components of the optical device 60 need to be configured so that the light passing through optical paths LP1 and LP2 is imaged at the same position. When the light passing through optical paths LP1 and LP2 is not imaged at the same position, it may cause problems such as ghosting in the image on the display panel 20.

[0107] For example, such as Figure 4A As shown, when the incident angle of ray L0 relative to the reflecting surface 30R of the reflective polarizer 30 is set to 45°, a semi-reflective mirror 42 is provided in the direction of travel of ray L1, which is the light ray L0 reflected by the reflective polarizer 30, and a reflective mirror 52 is provided in the direction of travel of ray L2, which is the light ray L0 traveling directly in the reflective polarizer 30. Note that here, it is assumed that the change in the optical path due to the change in polarization state can be ignored, and the illustration and explanation of this element are omitted.

[0108] At this time, the half-reflecting mirror 42 is configured such that the optical path of ray L1 overlaps with the optical axis 42A of the reflecting surface 42R of the half-reflecting mirror 42. Similarly, the reflecting mirror 52 is configured such that the optical path of ray L2 overlaps with the optical axis 52A of the reflecting surface 52R of the reflecting mirror 52. Furthermore, the curvature of the reflecting surface 42R is made equal to the curvature of the reflecting surface 52R. Additionally, the distance D1 between the reflecting surface 30R and the reflecting surface 42R of the reflective polarizer 30, and the distance D2 between the reflecting surface 30R and the reflecting surface 52R, are made equal.

[0109] By adopting this structure, the optical path of the light ray L1 and the optical path of the light ray L2 are converged together at the reflective polarizing plate 30, and the optical path of the resultant light ray L3 that is imaged at the same position can be generated. That is, the optical path LP1 and the optical path LP2 can be converged together at the reflective polarizing plate 30, and the optical path that is imaged at the same position can be generated.

[0110] Here, the reflective surface generally refers to a boundary surface when light is incident to a substance having different refractive indexes. However, light is not necessarily reflected only at the surface of the substance. The constituent elements included in the optical device are not limited to those that reflect light at the surface, and sometimes reflect light inside. Further, sometimes the surface (front surface) on the incident side of light is used as the first reflective surface, and the surface (back surface) opposite to the surface on the incident side of light is used as the second reflective surface. Further, sometimes a plurality of reflective surfaces are included, like a multilayer film. Therefore, in the present embodiment, sometimes the portions that reflect light are collectively referred to as the reflective surface.

[0111] Note that, in consideration of assembly in a frame or the like of an electronic device, sometimes a structure that changes the shape or position or the like of one or more of the constituent elements is adopted. In this case, other constituent elements can also be added in a manner that the light passing through the optical path LP1 and the optical path LP2 is imaged at the same position. Figure 4A

[0112] For example, as shown in FIG. 6, a lens 31 can be provided between the display panel 20 and the reflective polarizing plate 30. Alternatively, a lens 32 can be provided between the reflective polarizing plate 30 and the phase difference plate 51. Even in the case where one or more of the reflective surface 42R, the reflective surface 52R, the distance D1, and the distance D2 are different from those shown in FIG. 6, by adding one or both of the lens 31 and the lens 32, the two optical paths can be formed at the same position as well. Figure 4B Figure 4A Figure 4A Similarly, the two optical paths are formed at the same position as well.

[0113] Note that, it is preferable not to provide a lens between the reflective polarizing plate 30 and the phase difference plate 41. Although the configuration of the lens in this portion can adjust the optical path LP1, it can also cause unintended changes in the optical path LP3. However, a lens 33 can be provided outside the linear polarizing plate 44. Since this portion does not affect the optical path LP1 and the optical path LP2, it can only adjust the incoming external light. In addition, as a lens for adjusting the vergence, a lens 34 can also be provided on the side of the emission of light after the convergence of the optical path LP1, the optical path LP2, and the optical path LP3.

[0114] Although Figure 4B ​​​The example in which a plano-convex lens is used as each lens is shown, but the present embodiment is not limited to this. For example, each lens can be constituted by a plurality of plano-convex lenses. Alternatively, a biconvex lens can be used as each lens. Alternatively, a structure in which a plurality of lenses selected from a biconvex lens, a plano-convex lens, a biconcave lens, a plano-concave lens, a convex meniscus lens, and a concave meniscus lens are combined can be adopted as each lens. Alternatively, each lens is not limited to a spherical lens, but can be an aspherical lens. Furthermore, each lens can have a different mode from one another.

[0115] Note that the imaging position in the above description is specifically on the retina of the eye 10. When the imaging position on the retina is misaligned by a large amount, a double image or the like can occur. Note that the imaging positions of the light through the two light paths are preferably completely coincident, but a deviation within a range that does not affect visibility can be allowed.

[0116] Specifically, a deviation in which the overlap of the light emitted from adjacent pixels of the display panel 20 is within 50% can be allowed. When the deviation is within 50%, the image is seen in a state in which the resolution is substantially maintained, but when the deviation is greater than 50%, the image is seen in a state in which the resolution is reduced, and sometimes the image feels blurred. Therefore, the range in which the imaging positions coincide according to the present embodiment includes not only complete coincidence but also a deviation in which the overlap of the light emitted from adjacent pixels is within 50%.

[0117] Note that although the example in which the reflective polarizing plate separates the light path LP1 and the light path LP2 is shown above, a half mirror or a prism can be used instead of the reflective polarizing plate.

[0118] Furthermore, as the reflective polarizing plate, a reflective polarizing plate having a cholesteric liquid crystal can be used. The cholesteric liquid crystal can separate natural light into right circularly polarized light and left circularly polarized light by selective reflection of circularly polarized light. Therefore, the combination of the reflective polarizing plate and the phase difference plate in the optical device 60 that generates circularly polarized light using natural light (circular polarizing plate) can be replaced.

[0119] Figure 5A and Figure 5B is a view that illustrates the optical device 61 when the reflective polarizing plate 46 having a cholesteric liquid crystal is used.

[0120] The basic structure of the optical device 61 is a structure in which the reflective polarizing plate 30 of the optical device 60 is replaced with the reflective polarizing plate 46 having a cholesteric liquid crystal, and the phase difference plate 41 and the phase difference plate 51 are omitted. Figure 5A The light path LP4 and the light path LP5 are shown. Figure 5B The light path LP6 is shown. Note that the constituent elements other than the reflective polarizing plate 46 are the same as those of the optical device 60, and therefore the description is omitted.

[0121] First, the light path LP4 having a path of light emitted from the display panel 20 as the first light source, which is reflected by the reflective polarizing plate 46, is described.

[0122] Part of the light emitted from the display panel 20 is reflected by the reflective polarizing plate 46 and reflected by the half mirror 42. The light reflected by the half mirror 42 transmits the reflective polarizing plate 46. In the path of these lights, the path from the reflective polarizing plate 46 as the starting point and the reflective polarizing plate 46 as the ending point is the light path LP4. The light passing through the light path LP4 advances to the destination (the eye 10) together with the light passing through the light path LP5 and the light passing through the light path LP6.

[0123] The reflective polarizing plate 46 contains a cholesteric liquid crystal having a characteristic of selectively reflecting circularly polarized light, and can transmit circularly polarized light having one-handedness and reflect circularly polarized light having the other-handedness. Here, the reflective polarizing plate 46 reflects right circularly polarized light and transmits left circularly polarized light, and details thereof will be described later.

[0124] Reference Signs List Figure 5A Details of the polarization state of the light path LP4 are described. Note that the following description assumes that the light reflected by the reflective polarizing plate 46 is right circularly polarized light, but can also be left circularly polarized light.

[0125] Light emitted from the display panel 20, which vibrates in all directions of 360°, is incident on the reflective polarizing plate 46, and right circularly polarized light is selectively reflected and left circularly polarized light is transmitted. The right circularly polarized light selectively reflected by the reflective polarizing plate 46 is reflected by the half mirror 42 and inverted to left circularly polarized light. The left circularly polarized light inverted by the half mirror 42 transmits the reflective polarizing plate 46 and is incident on the eye 10.

[0126] In addition, right circularly polarized light that transmits the half mirror 42 is incident on the phase difference plate 43 and converted to 0° linearly polarized light. The 0° linearly polarized light emitted from the phase difference plate 43 is incident on the linear polarizing plate 44 having a transmission axis of 90° and is absorbed. Thus, stray light due to unnecessary reflection or the like can be suppressed.

[0127] Next, the light path LP5 having a path of light emitted from the display panel 20 as the first light source, which transmits the reflective polarizing plate 46, is described.

[0128] Part of the light emitted from the display panel 20 transmits the reflective polarizing plate 46 and is reflected by the mirror 52. The light reflected by the mirror 52 is reflected by the reflective polarizing plate 46. In the path of these lights, the path from the reflective polarizing plate 46 as the starting point and the reflective polarizing plate 46 as the ending point is the light path LP5. The light passing through the light path LP5 advances to the destination (the eye 10) together with the light passing through the light path LP4 and the light passing through the light path LP6.

[0129] Reference Signs List Figure 5ADetails of the polarization state of the light path LP5 are described.

[0130] The light emitted from the display panel 20, which vibrates in all directions of 360°, is incident on the reflective polarizing plate 46, and the right circularly polarized light is selectively reflected, and the left circularly polarized light is transmitted. The left circularly polarized light transmitted through the reflective polarizing plate 46 is reflected by the mirror 52 and is inverted to right circularly polarized light. The right circularly polarized light inverted by the mirror 52 is reflected by the reflective polarizing plate 46 and is incident on the eye 10.

[0131] Next, the details of the polarization state of the light path LP6 are described. Figure 5B The light path LP6 is described as a path of light that uses external light as a second light source. The external light (light that vibrates in all directions of 360°) is transmitted through the linear polarizing plate 44, the phase difference plate 43, the half mirror 42, and the reflective polarizing plate 46. In the path of this light, the path that starts with the linear polarizing plate 44 and ends with the reflective polarizing plate 46 is the light path LP6. The light that passes through the light path LP6 advances to the destination (the eye 10) together with the light that passes through the light path LP4 and the light that passes through the light path LP5.

[0132] Next, the details of the polarization state of the light path LP6 are described. Figure 5B The details of the polarization state of the above-described light path LP6 are described. The external light (light that vibrates in all directions of 360°) is first incident on the linear polarizing plate 44. Since the transmission axis of the linear polarizing plate 44 is 90°, 90° linearly polarized light is emitted from the linear polarizing plate 44, and the other light is absorbed by the linear polarizing plate 44.

[0133] The 90° linearly polarized light emitted from the linear polarizing plate 44 is incident on the phase difference plate 43 and is converted to left circularly polarized light. The left circularly polarized light emitted from the phase difference plate 43 is transmitted through the half mirror 42 and the reflective polarizing plate 46 and is incident on the eye 10.

[0134] Note that the left circularly polarized light emitted from the phase difference plate 43 is reflected by the half mirror 42, is inverted to right circularly polarized light, and is incident on the phase difference plate 43. The right circularly polarized light incident on the phase difference plate 43 is converted to 0° linearly polarized light and is incident on the linear polarizing plate 44 whose transmission axis is 90° and is absorbed. Thus, it is possible to suppress stray light due to unnecessary reflection or the like.

[0135] As such, it is possible to make the light path LP4, the light path LP5, and the light path LP6 converge by the reflective polarizing plate 46, and thus it is possible to overlap the images constituted by the light that passes through each light path.

[0136] When the reflectance of one of the right circularly polarized light and the left circularly polarized light and the transmittance of the other in the reflective polarizing plate 46 are each 100% and the light quantity of the light source is 1, as with the optical device 60, the light utilization efficiency of the optical device 61 is light path LP4 + light path LP5 = 0.75. In addition, light path LP6 = 0.25.

[0137] The reflective polarizing plate 46 can employ a layer structure having a cholesteric liquid crystal. The cholesteric liquid crystal can be used as a bistable element capable of multiple outputs for one input, and can selectively reflect light of a certain wavelength and transmit light of other wavelengths under certain conditions.

[0138] The cholesteric liquid crystal has a layered structure in which liquid crystal molecules in each layer are aligned in a prescribed direction. In addition, the alignment direction of adjacent layers is twisted and different, thereby forming a helical structure across the multiple layers. The helical structure has right-handed and left-handed twists, and has a prescribed pitch (period). The cholesteric liquid crystal can reflect circularly polarized light whose wavelength is equal to the product of the refractive index and the pitch, and whose twist direction is the same as the helical structure.

[0139] Figure 6 is a view illustrating one example of the reflective polarizing plate 46 having a cholesteric liquid crystal. Here, a case is shown in which the reflective polarizing plate 46 has a three-layer structure of a layer 46b, a layer 46g, and a layer 46r. The layer 46b, the layer 46g, and the layer 46r can all be referred to as cholesteric liquid crystal layers. The layer 46b contains a cholesteric liquid crystal CICb, the layer 46g contains a cholesteric liquid crystal CLCg, and the layer 46r contains a cholesteric liquid crystal CLCr. The cholesteric liquid crystals CICb, CLCg, and CLCr have helical structures whose pitches are different from each other.

[0140] Here, the product of the pitch Pb and the refractive index of the cholesteric liquid crystal CICb of the layer 46b corresponds to the wavelength of blue light. The product of the pitch Pg and the refractive index of the cholesteric liquid crystal CLCg of the layer 46g corresponds to the wavelength of green light. The product of the pitch Pr and the refractive index of the cholesteric liquid crystal CLCr of the layer 46r corresponds to the wavelength of red light. The refractive indices of the cholesteric liquid crystals CICb, CLCg, and CLCr are substantially equal, and thus the pitches can satisfy Pb < Pg < Pr. In addition, each of the cholesteric liquid crystals CICb, CLCg, and CLCr is a right-handed helical structure.

[0141] When white light W of right circularly polarized light is incident on this layer structure from the side of the layer 46b, as shown in Figure 6 , the component of blue light B is reflected by the layer 46b, the component of green light G is reflected by the layer 46g, and the component of red light R is reflected by the layer 46r. At this time, the polarization state of the reflected light does not change, and is all in the state of right circularly polarized light. In other words, the reflected circularly polarized light is in a state in which the chirality is maintained.

[0142] In addition, as shown in Figure 6 , the white light W is composed of the three primary colors of light of blue light B, green light G, and red light R, but in reality, the light of each color of RGB emitted from the display panel 20 is not monochromatic, but has a wide wavelength distribution.

[0143] Further, liquid crystal molecules constituting the cholesteric liquid crystal have anisotropy of refractive index, and the product of the refractive index and the pitch takes a value within a certain range. The cholesteric liquid crystal can reflect light whose wavelength is equal to the value within the range.

[0144] Therefore, as long as the refractive index and the pitch of the cholesteric liquid crystal are appropriate, even if the RGB colors of the incident light are wide, each color can be reflected. In other words, right circularly polarized light whose wavelength is within the range of blue light to red light (for example, 430 nm to 780 nm) can be reflected by the reflective polarizing plate 46.

[0145] On the other hand, when white light W of left circularly polarized light is incident from the layer 46b side, selective reflection does not occur in the layers 46b, 46g, and 46r, and the white light W is transmitted without changing the chirality in the state of left circularly polarized light.

[0146] Note that, Figure 6 The reflection of each layer is simply shown, and Bragg reflection in which a reflection surface is formed for each pitch can occur in the cholesteric liquid crystal. In addition, in the case where each of the cholesteric liquid crystals CLCb, CLECg, and CLECr is a left-handed helical structure, the incident right circularly polarized light is transmitted and the left circularly polarized light is reflected, contrary to the above-described explanation of reflection and transmission.

[0147] Figure 7A is a block diagram of a display panel 20 included in an electronic device that is one embodiment of the present application. The display panel 20 includes a pixel array 74, a circuit 75, and a circuit 76. The pixel array 74 includes pixels 70 arranged in a column direction and a row direction.

[0148] The pixel 70 can include a plurality of sub-pixels 71. The sub-pixels 71 have a function of emitting light used for display. By making the light emitted by the sub-pixels 71 have colors such as R (red), G (green), and B (blue), color display can be performed.

[0149] Sub-pixel 71 includes a light-emitting device that emits visible light. Preferably, an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is used as the light-emitting device. Examples of light-emitting materials included in the EL element include fluorescent materials, phosphorescent materials, materials exhibiting thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials, etc.). Alternatively, LEDs such as Micro LEDs (Light Emitting Diodes) can also be used as the light-emitting device. Furthermore, non-light-emitting devices such as liquid crystal devices can also be used in sub-pixel 71.

[0150] Circuits 75 and 76 are driving circuits used to drive sub-pixel 71. Circuit 75 can be used as a source driving circuit, and circuit 76 can be used as a gate driving circuit. For example, shift register circuits can be used as circuits 75 and 76.

[0151] Note that the display panel can be divided into multiple regions, and pixels can be driven in each of the divided regions.

[0152] For example, such as Figure 7B As shown, circuits 75 and 76 can be separately arranged under pixel array 74. In this case, display panel 20 has a stacked structure of layers 77 and 78, with multiple circuits 75 and multiple circuits 76 respectively arranged in layer 77, and pixel array 74 arranged in layer 78 in a manner that overlaps with them.

[0153] By segmenting the configuration circuits 75 and 76, the pixel array 74 can be driven by segmented regions. For example, parts of the pixel array 74 can operate at different frame rates. Parts of the pixel array 74 can be displayed at different resolutions, thereby also accommodating foveated rendering.

[0154] Furthermore, by placing the driving circuitry in the lower layer of the pixel array 74, the wiring length can be shortened and the wiring capacitance reduced. This allows for a display panel capable of high-speed and low-power operation. Additionally, a narrow bezel design for the display panel 20 can be achieved.

[0155] Notice, Figure 7B The configuration and area of ​​circuits 75 and 76 shown are merely examples and can be appropriately modified. Furthermore, a portion of circuits 75 and 76 can also be formed in the same layer as the pixel array 74. Additionally, layer 77 can also house circuits such as storage circuits, arithmetic circuits, and communication circuits.

[0156] In this structure, for example, layer 77 can be disposed on a single-crystal silicon substrate, circuits 75 and 76 can be formed using transistors (hereinafter, Si transistors) containing silicon in the channel formation region, and the pixel circuits included in the pixel array 74 disposed in layer 78 can be formed using transistors (hereinafter, OS transistors) containing metal oxide in the channel formation region. OS transistors can be formed using thin films and stacked on Si transistors.

[0157] Note that, as Figure 7C As shown, a layer 79, in which OS transistors are disposed, may also be included between layer 77 and layer 78. OS transistors forming part of the pixel circuitry included in the pixel array 74 may be disposed in layer 79. Alternatively, OS transistors forming part of circuits 75 and 76 may be disposed. Alternatively, OS transistors forming part of circuits such as storage circuits, arithmetic circuits, and communication circuits that can be disposed in layer 77 may be disposed.

[0158] Furthermore, the top surface shape of the display panel 20 is not limited to a rectangle; it can also be, for example... Figure 7D The circle shown. Or, it could be as follows: Figure 7E The octagon and other polygons shown.

[0159] Figure 8 It shows including Figure 1 The diagram shows an example of an eyeglass-type device comprising a display panel 20 and an optical device 60. Here, the combination of the display panel 20 and the optical device 60 is shown as a display unit 92 in dashed lines. The eyeglass-type device includes two sets of display units 92.

[0160] A light-transmitting section is included in the front of the frame 90, through which external light is introduced into the display unit 92. The user can view the display by overlapping the light from the display panel 20 included in the display unit 92 with the external light. Virtual information can be displayed on the display panel 20. The user can view this scene by overlapping it with the display, and can experience augmented reality by overlaying virtual information onto reality.

[0161] Alternatively, the housing 90 or the strap 91 may also be provided with input terminals and output terminals. Cables supplying image signals from image output devices or power for charging a battery housed within the housing 90 can be connected to the input terminals. The output terminals may be used as audio output terminals, for example, and can be connected to headphones or headsets. However, if audio data can be output wirelessly or audio can be output from an external image output device, this audio output terminal may not be required.

[0162] In addition, the inside of the frame 90 or the strap 91 can be provided with a wireless communication module and a storage module, and the like. The content of viewing can be downloaded and stored in the storage module by wireless communication. Thus, the user can view the downloaded content at any time offline. In addition, the Internet can be connected to obtain information of the viewed scene.

[0163] In addition, a line-of-sight detection sensor can be provided in the frame 90. For example, the user can see operation buttons such as a power-on, power-off, sleep, volume adjustment, channel change, menu display, selection, determination, return, and the like, and operation buttons such as play, stop, pause, fast forward, fast reverse, and the like of a video, whereby each operation can be performed.

[0164] By using the optical device 60 of one embodiment of the present application for a glasses-type device, a small, thin, low-power-consumption, and highly reliable electronic device can be implemented.

[0165] At least a part of the present embodiment can be implemented in appropriate combination with other embodiments and examples described in the present specification.

[0166] (Embodiment 2) In this embodiment, a structure example of a display panel which can be used for an electronic device of one embodiment of the present application is described. The display panel described below can be used as the display panel 20 of Embodiment 1.

[0167] One embodiment of the present application is a display panel including light-emitting elements (also referred to as light-emitting devices). The display panel includes two or more pixels of different light-emitting colors. Each of the pixels includes a light-emitting element. Each of the light-emitting elements includes a pair of electrodes and an EL layer between the electrodes. The light-emitting element is preferably an organic EL element (organic electroluminescent element). Two or more light-emitting elements which emit different colors each include an EL layer including a different material. For example, a full-color display panel can be implemented by including three kinds of light-emitting elements which emit light of red (R), green (G), or blue (B), respectively.

[0168] In manufacturing a display panel including a plurality of light emitting elements having different light emitting colors, a layer containing at least a light emitting material (light emitting layer) needs to be formed into islands, respectively. Here, a method of forming an island-shaped organic film by an evaporation method using a shadow mask or the like is known when a part or all of an EL layer is formed, respectively. However, in this method, the shape and position of the island-shaped organic film deviate from those at the design due to various influences such as a larger profile of the deposited film caused by the precision of the metal mask, misalignment of the metal mask and the substrate, flexure of the metal mask, and vapor scattering, and it is difficult to achieve high definition and high aperture ratio of the display panel. Further, in evaporation, the thickness of the end portion is sometimes small due to a blurred profile of the layer. That is, the thickness of the island-shaped light emitting layer is sometimes different depending on the position. In addition, when a large and high resolution or high definition display panel is manufactured, there is a concern that the yield of the manufacturing decreases due to deformation caused by low dimensional precision and heat of the metal mask. Therefore, a measure of improving the definition (also referred to as pixel density) by simulation by adopting a special pixel arrangement such as Pentile arrangement has been taken.

[0169] Note that in this specification and the like, island-shaped refers to a state in which two or more layers formed using the same material in the same process are physically separated. For example, an island-shaped light emitting layer refers to a state in which the light emitting layer is physically separated from an adjacent light emitting layer.

[0170] In one embodiment of the present application, an EL layer is processed into a fine pattern by a photolithography method without using a shadow mask such as a high-precision metal mask (FMM). Thus, a display panel having high definition and high aperture ratio, which has been difficult to achieve so far, can be achieved. Further, since the EL layer can be manufactured separately, a display panel having very clear and high-contrast display quality can be achieved. In addition, for example, the EL layer can be processed into a fine pattern using both a metal mask and a photolithography method.

[0171] Further, a part or all of the EL layer can be physically separated. Thus, a leakage current between light emitting elements via a layer (also referred to as a common layer) commonly used by adjacent light emitting elements can be suppressed. Thus, unintended light emission due to crosstalk can be suppressed, and thus a display device having extremely high contrast can be achieved. In particular, a display panel in which current efficiency is high at low luminance can be achieved.

[0172] One embodiment of the present application can also realize a display panel that combines a white light-emitting element and a color filter. In this case, the same structure of light-emitting element can be used as each light-emitting element in a pixel (sub-pixel) that emits light of a different color, and all the layers in each light-emitting element can be used as a common layer. Furthermore, part or all of each EL layer can be separated by a process using photolithography. Thus, a display panel with high contrast can be realized while suppressing leakage current through the common layer. In particular, in an element having a tandem structure in which a plurality of light-emitting layers are stacked with a high-conductivity intermediate layer interposed therebetween, leakage current through the intermediate layer can be effectively prevented, so that a display panel with high luminance, high resolution, and high contrast can be realized.

[0173] When the EL layer is processed using photolithography, deterioration can occur due to exposure of part of the light-emitting layer. Therefore, it is preferable to provide an insulating layer that covers at least the side surface of the island-shaped light-emitting layer. The insulating layer can also cover part of the top surface of the island-shaped EL layer. The insulating layer preferably uses a material that has a barrier property against water and oxygen. For example, an inorganic insulating film that is less likely to allow water or oxygen to diffuse can be used. Thus, the display panel with high reliability can be realized while suppressing deterioration of the EL layer.

[0174] Further, there is a region (recess) in which no EL layer of each light-emitting element is provided between adjacent two light-emitting elements. In the case where a common electrode or a common electrode and a common layer are formed so as to cover the recess, a phenomenon in which the common electrode is disconnected (also referred to as disconnection) due to a step at the end of the EL layer can occur, leading to insulation of the common electrode over the EL layer. Thus, a structure in which a resin layer used as a planarization film is used to fill a local step between adjacent two light-emitting elements (also referred to as LFP: Local Filling Planarization) is preferably employed. The resin layer is used as a planarization film. Thus, the display panel with high reliability can be realized while suppressing disconnection of the common layer or the common electrode.

[0175] Hereinafter, a more specific structural example of a display panel of one embodiment of the present application will be described with reference to drawings.

[0176] [Structural Example 1] Figure 9A A top view of a display panel 100 of one embodiment of the present application is shown. The display panel 100 includes a plurality of light-emitting elements 110R that emit red light, a plurality of light-emitting elements 110G that emit green light, and a plurality of light-emitting elements 110B that emit blue light over a substrate 101. Figure 9A In the display panel 100, the symbols of R, G, and B are written in the light-emitting regions of the light-emitting elements for easy distinction between the light-emitting elements.

[0177] The light-emitting elements 110R, the light-emitting elements 110G, and the light-emitting elements 110B are arranged in a matrix.Figure 9A It shows a so-called stripe arrangement in which light-emitting elements of the same color are arranged in one direction. Note that the arrangement method of the light-emitting elements is not limited to this, and other arrangement methods such as S stripe arrangement, Delta arrangement, Bayer arrangement, zigzag arrangement, etc. can also be used, and Pentile arrangement, Diamond arrangement, etc. can also be used.

[0178] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). As the light-emitting substance contained in the EL element, an inorganic compound (such as a quantum dot material) can also be used in addition to the organic compound.

[0179] In addition, Figure 9A It shows a connection electrode 111C electrically connected to the common electrode 113. The connection electrode 111C is supplied with the potential (for example, an anode potential or a cathode potential) supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 110R, etc. are arranged.

[0180] The connection electrode 111C can be provided along the outer periphery of the display area. For example, it can be provided along one side of the outer periphery of the display area, or can be provided along two or more sides of the outer periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped (rectangular), L-shaped, "冂"-shaped (square bracket-shaped), or quadrangular, etc. Note that in this specification, etc., the top surface shape refers to the shape when viewed from above, that is, the shape when viewed from the top.

[0181] Figure 9B 、 Figure 9C They are respectively cross-sectional schematic views corresponding to Figure 9A the dash lines A1 - A2 and the dash lines A3 - A4 in Figure 9B It shows a cross-sectional schematic view of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, Figure 9C It shows a cross-sectional schematic view of the connection portion 140 where the connection electrode 111C is connected to the common electrode 113.

[0182] The light-emitting element 110R includes a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G includes a pixel electrode 111G, an organic layer 112G, the common layer 114, and the common electrode 113. The light-emitting element 110B includes a pixel electrode 111B, an organic layer 112B, the common layer 114, and the common electrode 113. The common layer 114 and the common electrode 113 are commonly used for the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B.

[0183] The organic layer 112R included in the light-emitting element 110R contains at least a light-emitting organic compound that emits red light. The organic layer 112G included in the light-emitting element 110G contains at least a light-emitting organic compound that emits green light. The organic layer 112B included in the light-emitting element 110B contains at least a light-emitting organic compound that emits blue light. Each of the organic layer 112R, the organic layer 112G, and the organic layer 112B can also be referred to as an EL layer, and includes at least a layer containing a light-emitting substance (light-emitting layer).

[0184] Hereinafter, when the contents common to the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B are described, they are described as the light-emitting element 110 in some cases. Similarly, when the contents common to the constituent elements distinguished by letters such as the organic layer 112R, the organic layer 112G, and the organic layer 112B are described, they are described using symbols in which the letters are omitted in some cases.

[0185] The organic layer 112 and the common layer 114 can each independently include one or more of an electron-injection layer, an electron-transport layer, a hole-injection layer, and a hole-transport layer. For example, the organic layer 112 has a stacked-layer structure of a hole-injection layer, a hole-transport layer, a light-emitting layer, and an electron-transport layer from the side of the pixel electrode 111, and the common layer 114 includes an electron-injection layer.

[0186] The pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are each provided in each of the light-emitting elements. Further, the common electrode 113 and the common layer 114 are provided as one layer commonly used for the light-emitting elements. Either of the pixel electrodes and the common electrode 113 uses a conductive film having a light-transmitting property with respect to visible light, and the other uses a conductive film having a reflective property. By making each of the pixel electrodes have a light-transmitting property and making the common electrode 113 have a reflective property, a bottom emission type (bottom emission structure) display panel can be implemented, in contrast to this, by making each of the pixel electrodes have a reflective property and making the common electrode 113 have a light-transmitting property, a top emission type (top emission structure) display panel can be implemented. Further, by making both of the pixel electrodes and the common electrode 113 have a light-transmitting property, a dual emission type (dual emission structure) display panel can be implemented.

[0187] A protective layer 121 is provided on the common electrode 113 so as to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing into the light emitting elements from above.

[0188] The end portion of the pixel electrode 111 preferably has a tapered shape. When the end portion of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the end portion of the pixel electrode 111 can also have a tapered shape. By providing the end portion of the pixel electrode 111 with a tapered shape, the coverage of the organic layer 112 provided across the end portion of the pixel electrode 111 can be improved. Further, by providing the side surface of the pixel electrode 111 with a tapered shape, foreign matter (e.g., dust or fine particles, etc.) in the manufacturing process can be easily removed by a washing process or the like, and thus is preferable.

[0189] In the present specification and the like, a tapered shape refers to a shape in which at least a portion of the side surface of a constituent element is provided obliquely with respect to the substrate surface. For example, a region in which the side surface is oblique and the angle with the substrate surface (also referred to as a taper angle) is less than 90° is preferable.

[0190] The organic layer 112 is processed into an island shape by photolithography. Therefore, the organic layer 112 has a shape in which the angle between the top surface and the side surface at the end portion is close to 90°. On the other hand, the film thickness of the organic film formed using an FMM (Fine Metal Mask) or the like has a tendency to be thinner as it approaches the end portion, and for example, the top surface is formed in a slope shape in a range of 1 μm or more and 10 μm or less from the end portion, and thus it is difficult to distinguish the top surface from the side surface.

[0191] An insulating layer 125, a resin layer 126, and a layer 128 are provided between two adjacent light emitting elements.

[0192] The side surface of each of the organic layers 112 faces each other with the resin layer 126 interposed therebetween between two adjacent light emitting elements. The resin layer 126 is provided between two adjacent light emitting elements so as to fill the region between the end portions of the organic layers 112 and the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and the common layer 114 and the common electrode 113 are provided so as to cover the top surface of the resin layer 126.

[0193] The resin layer 126 is used as a planarization film that fills the step between two adjacent light emitting elements. By providing the resin layer 126, it is possible to prevent the phenomenon in which the common electrode 113 is disconnected (also referred to as disconnection) due to the step of the end portion of the organic layer 112, and the common electrode on the organic layer 112 is insulated.

[0194] As the resin layer 126, an insulating layer containing an organic material is suitably used. For example, as the resin layer 126, an acrylic resin, a polyimide resin, an epoxy resin, an imine resin, a polyamide resin, a polyimide amide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, a precursor of the above resins, and the like can be used. Further, as the resin layer 126, an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used.

[0195] Further, as the resin layer 126, a photosensitive resin can be used. As the photosensitive resin, a photoresist can be used. The photosensitive resin can use a positive material or a negative material.

[0196] The resin layer 126 can contain a material that absorbs visible light. For example, the resin layer 126 itself can be composed of a material that absorbs visible light, or the resin layer 126 can contain a pigment that absorbs visible light. As the resin layer 126, for example, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and is used as a black matrix, or the like can be used.

[0197] The insulating layer 125 is in contact with the side surface of the organic layer 112. Further, the insulating layer 125 covers the upper end portion of the organic layer 112. Further, a part of the insulating layer 125 is in contact with the top surface of the substrate 101.

[0198] The insulating layer 125 is positioned between the resin layer 126 and the organic layer 112 and is used as a protective film for preventing the resin layer 126 from being in contact with the organic layer 112. When the organic layer 112 is in contact with the resin layer 126, it is possible that the organic layer 112 is dissolved due to an organic solvent or the like used when the resin layer 126 is formed. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, the side surface of the organic layer 112 can be protected.

[0199] The insulating layer 125 can be an insulating layer containing an inorganic material. As the insulating layer 125, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and an oxynitride insulating film can be used. The insulating layer 125 can have a single-layer structure or a stacked-layer structure. As the oxide insulating film, a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium-gallium-zinc oxide film, a gallium oxide film, a germanium oxide film, a yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film, or the like can be given. As the nitride insulating film, a silicon nitride film and an aluminum nitride film, or the like can be given. As the oxynitride insulating film, a silicon oxynitride film and an aluminum oxynitride film, or the like can be given. As the oxynitride insulating film, a silicon oxynitride film and an aluminum oxynitride film, or the like can be given. In particular, by using an aluminum oxide film, an oxide metal film such as a hafnium oxide film, an inorganic insulating film such as a silicon oxide film, or the like formed by an ALD method for the insulating layer 125, an insulating layer 125 having few pinholes and excellent in the function of protecting the EL layer can be formed.

[0200] In this specification and the like, an "oxynitride" refers to a material in which the content of oxygen is more than the content of nitrogen in its composition, and a "nitride oxide" refers to a material in which the content of nitrogen is more than the content of oxygen in its composition. For example, in the case where "silicon oxynitride" is described, a material in which the content of oxygen is more than the content of nitrogen in its composition is meant, and in the case where "silicon nitride oxide" is described, a material in which the content of nitrogen is more than the content of oxygen in its composition is meant.

[0201] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method which has high coverage.

[0202] In addition, by providing a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum, or the like) between the insulating layer 125 and the resin layer 126, the above-described reflective film can reflect light emitted from the light-emitting layer. Thus, the light extraction efficiency can be further improved.

[0203] The layer 128 is a part of a protective layer (also referred to as a mask layer, a sacrificial layer) for protecting the organic layer 112 at the time of etching the organic layer 112, and is a part of a residual portion. The layer 128 can use a material that can be used for the above-described insulating layer 125. In particular, the layer 128 and the insulating layer 125 preferably use the same material, and thus the same device used for processing or the like can be used.

[0204] In particular, since an aluminum oxide film, an oxide metal film such as a hafnium oxide film, an inorganic insulating film such as a silicon oxide film, or the like formed by an ALD method is a film having few pinholes, the function of protecting the EL layer is excellent, and thus can be suitably used for the insulating layer 125 and the layer 128.

[0205] The protective layer 121 can have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. As the inorganic insulating film, for example, an oxide film or a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, a hafnium oxide film, or the like can be given. Alternatively, a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, indium gallium zinc oxide, or the like can be used as the protective layer 121.

[0206] A stacked film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121. For example, it is preferable that an organic insulating film be interposed between a pair of inorganic insulating films. Further, the organic insulating film is preferably used as a planarization film. Thus, the top surface of the organic insulating film can be planarized, so that the coverage of the inorganic insulating film thereon is improved, whereby the barrier property can be improved. Further, the top surface of the protective layer 121 is planarized, so that when a structure (e.g., a color filter, an electrode of a touch sensor, or a lens array) is provided over the protective layer 121, the influence of the concavo-convex shape of the underlying structure can be reduced, so that it is preferable.

[0207] Figure 9C A connection portion 140 in which the connection electrode 111C and the common electrode 113 are electrically connected is shown. In the connection portion 140, an opening portion is provided in the insulating layer 125 and the resin layer 126 over the connection electrode 111C. In the opening portion, the connection electrode 111C and the common electrode 113 are electrically connected.

[0208] Note that, Figure 9C The connection portion 140 in which the connection electrode 111C and the common electrode 113 are electrically connected is shown, but the common electrode 113 can be provided over the connection electrode 111C with the common layer 114 interposed therebetween. In particular, in the case where a carrier injection layer is used as the common layer 114, or the like, the resistivity of the material used for the common layer 114 is sufficiently low and the film thickness thereof is also thin, so that in many cases, the common layer 114 is positioned in the connection portion 140 without any problem. Thus, the common electrode 113 and the common layer 114 can be formed using the same mask for shielding, so that the manufacturing cost can be reduced.

[0209] [Structure Example 2] Hereinafter, a display panel different from the above-described structure example 1 in part of the structure will be described. Note that the description of the parts common to the above-described structure example 1 is omitted in some cases with reference to the above-described structure example 1.

[0210] Figure 10A is a cross-sectional schematic view of a display panel 100a. The display panel 100a differs from the display panel 100 mainly in the structure of the light-emitting element and in that the former includes a coloring layer.

[0211] The display panel 100a includes a light emitting element 110W that emits white light. The light emitting element 110W includes a pixel electrode 111, an organic layer 112W, a common layer 114, and a common electrode 113. The organic layer 112W emits white light. For example, the organic layer 112W can include two or more light emitting materials whose light emitting colors are in a complementary color relationship. For example, a light emitting organic compound that emits blue light and a light emitting organic compound that emits yellow light can be included. For example, the organic layer 112W can also include a light emitting organic compound that emits red light, a light emitting organic compound that emits green light, and a light emitting organic compound that emits blue light.

[0212] Between the two adjacent light emitting elements 110W, each organic layer 112W is separated. Thus, leakage current flowing through the organic layer 112W between the adjacent light emitting elements 110W can be suppressed, and crosstalk due to the leakage current can be suppressed. Therefore, a display panel with high contrast and color reproducibility can be achieved.

[0213] An insulating layer 122 that functions as a planarization film is provided on the protective layer 121, and the coloring layer 116R, the coloring layer 116G, and the coloring layer 116B are provided on the insulating layer 122.

[0214] As the insulating layer 122, an organic resin film or an inorganic insulating film whose top surface is planarized can be used. Since the insulating layer 122 is a formed surface of the coloring layer 116R, the coloring layer 116G, and the coloring layer 116B, the thickness of the coloring layer 116R and the like can be uniform when the top surface of the insulating layer 122 is planar, and thus color purity can be improved. Note that when the thickness of the coloring layer 116R and the like is not uniform, the amount of light absorption differs depending on the region in the coloring layer 116R, and thus color purity can decrease.

[0215] [Structure Example 3] Figure 10B is a cross-sectional view of a display panel 100b.

[0216] The light emitting element 110R includes the pixel electrode 111, a conductive layer 115R, the organic layer 112W, and the common electrode 113. The light emitting element 110G includes the pixel electrode 111, a conductive layer 115G, the organic layer 112W, and the common electrode 113. The light emitting element 110B includes the pixel electrode 111, a conductive layer 115B, the organic layer 112W, and the common electrode 113. The conductive layer 115R, the conductive layer 115G, and the conductive layer 115B each have light transmittance and are used as an optical adjustment layer.

[0217] By using a film that reflects visible light as the pixel electrode 111 and a film that has both reflectivity and transmissivity for visible light as the common electrode 113, a microcavity resonator (microcavity) structure can be achieved. At this time, by adjusting the thickness of the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B in such a manner that the most appropriate optical path length is achieved, even if an organic layer 112 that exhibits white emission is used, light of different wavelengths can be extracted from the light emitting elements 110R, 110G, and 110B respectively to obtain enhanced light.

[0218] Further, by providing coloring layers 116R, 116G, and 116B on the optical paths of the light emitting elements 110R, 110G, and 110B respectively, light of high color purity can be extracted.

[0219] In addition, an insulating layer 123 is provided that covers the end portions of the pixel electrode 111, the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B. The end portion of the insulating layer 123 preferably has a tapered shape. By providing the insulating layer 123, the coverage of the organic layer 112W, the common electrode 113, the protective layer 121, and the like formed thereon can be improved.

[0220] The organic layer 112W and the common electrode 113 are provided as a continuous film in each of the light emitting elements. By adopting this structure, the manufacturing process of the display panel can be greatly simplified, and therefore is preferable.

[0221] Here, the end portion of the pixel electrode 111 preferably has a substantially perpendicular shape. By this, a portion with a steep inclination can be formed on the surface of the insulating layer 123, and a portion with a small thickness can be formed in a portion of the organic layer 112W that covers this portion, or a portion of the organic layer 112W can be separated. By this, leakage current between adjacent light emitting elements through the organic layer 112W can be suppressed without processing the organic layer 112W using photolithography or the like.

[0222] The above describes an example of the structure of the display panel.

[0223] [Layout of Pixels] Hereinafter, a pixel layout different from that of Embodiment 1 will be mainly described. The arrangement of the light emitting elements (subpixels) is not particularly limited, and various arrangement methods can be adopted. Figure 9A

[0224] As the top surface shape of the subpixel, for example, polygons such as a triangle, a quadrangle (including a rectangle, a square), a pentagon, and the like, rounded shapes of these polygons, an ellipse, or a circle, and the like can be given. Here, the top surface shape of the subpixel corresponds to the top surface shape of the light emitting region of the light emitting element.

[0225] Figure 11A ​The pixel 150 shown adopts an S stripe arrangement. Figure 11A The pixel 150 shown is composed of three sub-pixels of the light emitting elements 110a, 110b, 110c. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c can be a blue light emitting element, a red light emitting element, and a green light emitting element, respectively.

[0226] Figure 11B The pixel 150 shown includes the light emitting element 110a having a top surface shape of an approximately trapezoidal shape with rounded corners or an approximately triangular shape, the light emitting element 110b having a top surface shape of an approximately trapezoidal shape with rounded corners or an approximately triangular shape, and the light emitting element 110c having a top surface shape of an approximately quadrangular shape with rounded corners or an approximately hexagonal shape. Further, the light emitting area of the light emitting element 110a is larger than that of the light emitting element 110b. In this way, the shape and size of each light emitting element can be determined independently. For example, the size of a light emitting element with high reliability can be smaller. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c can be a green light emitting element, a red light emitting element, and a blue light emitting element, respectively.

[0227] Figure 11C The pixels 124a, 124b shown adopt a PenTile arrangement. Figure 11C An example in which the pixel 124a including the light emitting element 110a and the light emitting element 110b and the pixel 124b including the light emitting element 110b and the light emitting element 110c are alternately arranged is shown. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c can be a red light emitting element, a green light emitting element, and a blue light emitting element, respectively.

[0228] Figure 11D and Figure 11E The pixels 124a, 124b shown adopt a delta arrangement. The pixel 124a includes two light emitting elements (the light emitting elements 110a, 110b) in the upper row (first row) and one light emitting element (the light emitting element 110c) in the lower row (second row). The pixel 124b includes one light emitting element (the light emitting element 110c) in the upper row (first row) and two light emitting elements (the light emitting elements 110a, 110b) in the lower row (second row). For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c can be a red light emitting element, a green light emitting element, and a blue light emitting element, respectively.

[0229] Figure 11D An example in which each light emitting element has a top surface shape of an approximately quadrangular shape with rounded corners is shown, Figure 11E An example in which each light emitting element has a circular top surface shape is shown.

[0230] Figure 11FAn example in which the light emitting elements of each color are arranged in a zigzag shape is shown. Specifically, the positions of the upper edges of two light emitting elements (e.g., light emitting element 110a and light emitting element 110b or light emitting element 110b and light emitting element 110c) arranged in a row direction do not coincide when viewed from above. For example, the light emitting element 110a, the light emitting element 110b, and the light emitting element 110c can each be a red light emitting element, a green light emitting element, and a blue light emitting element, respectively.

[0231] In photolithography, the more fine the pattern to be processed is, the more the influence of diffraction of light cannot be ignored, so the fidelity is deteriorated when transferring the pattern of a photomask by exposure, and it is difficult to process a resist mask into a desired shape. Therefore, even if the pattern of a photomask is a rectangle, a pattern with rounded corners is easily formed. Thus, the top surface shape of the light emitting element is sometimes a polygonal shape with rounded corners, an elliptical shape, or a circular shape, or the like.

[0232] Further, in the manufacturing method of the display panel of one embodiment of the present application, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material of the EL layer and the curing temperature of the resist material, the curing of the resist film is sometimes insufficient. The resist film that is not sufficiently cured sometimes has a shape that deviates from a desired shape when processed. As a result, the top surface shape of the EL layer is sometimes a polygonal shape with rounded corners, an elliptical shape, or a circular shape, or the like. For example, when a resist mask whose top surface shape is a square is to be formed, a resist mask whose top surface shape is a circle is sometimes formed, and the top surface shape of the EL layer is a circle.

[0233] In order to make the top surface shape of the EL layer a desired shape, a technique in which a mask pattern is corrected in advance so as to coincide with a transfer pattern (OPC (Optical Proximity Correction) technique) can be used. Specifically, in the OPC technique, a correction pattern is added to a corner of a pattern or the like on a mask pattern.

[0234] The layout of the pixel is described above.

[0235] At least part of this embodiment mode can be implemented in appropriate combination with other embodiment modes described in this specification.

[0236] (Embodiment 3) In this embodiment, another structural example of a display panel that can be used for an electronic device of one embodiment of the present application is described.

[0237] The display panel of this embodiment is a high-definition display panel, which is particularly suitable for a display portion of a VR device such as a head-mounted display and a wearable device such as a head-mountable AR device.

[0238] [Display Module] Figure 12A is a perspective view of a display module 280. The display module 280 includes the display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and can be any one of the display panels 200B to 200F to be described later.

[0239] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is a region where an image is displayed.

[0240] Figure 12B is a schematic cross-sectional view of a structure of the substrate 291 side. The substrate 291 has a circuit portion 282, a pixel circuit portion 283 over the circuit portion 282, and a pixel portion 284 over the pixel circuit portion 283 stacked thereover. Further, a terminal portion 285 to be connected to the FPC 290 is provided over a portion of the substrate 291 which does not overlap with the pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 through a wiring portion 286 formed with a plurality of wiring lines.

[0241] The pixel portion 284 includes a plurality of pixels 284a arranged in a matrix. Figure 12B An enlarged view of one pixel 284a is shown on the right side of FIG. 8A. The pixel 284a includes a light-emitting element 110R which emits red light, a light-emitting element 110G which emits green light, and a light-emitting element 110B which emits blue light.

[0242] The pixel circuit portion 283 includes a plurality of pixel circuits 283a arranged in a matrix. One pixel circuit 283a controls light emission of the three light-emitting elements included in one pixel 284a. One pixel circuit 283a can include three circuits which control light emission of one light-emitting element. For example, the pixel circuit 283a can have a structure in which at least one selection transistor, one current control transistor (driver transistor), and a capacitor are provided for one light-emitting element. At this time, a gate of the selection transistor is input with a gate signal and a source thereof is input with a source signal. Thus, an active matrix display panel can be implemented.

[0243] The circuit portion 282 includes a circuit for driving each of the pixel circuits 283a of the pixel circuit portion 283. For example, one or both of a gate line driver circuit and a source line driver circuit are preferably included. Further, at least one of an arithmetic circuit, a storage circuit, and a power supply circuit, and the like can be provided. In addition, a transistor provided in the circuit portion 282 can also be part of the pixel circuit 283a. That is, the pixel circuit 283a can be formed using a transistor included in the pixel circuit portion 283 and a transistor included in the circuit portion 282.

[0244] The FPC 290 functions as a wiring for supplying a video signal or a power supply potential from the outside to the circuit portion 282. Further, an IC can be mounted on the FPC 290.

[0245] The display module 280 can have a structure in which the lower side of the pixel portion 284 is overlapped with one or both of the pixel circuit portion 283 and the circuit portion 282, and thus the display portion 281 can have a very high aperture ratio (effective display area ratio). For example, the aperture ratio of the display portion 281 can be 40 % or more and less than 100 %, preferably 50 % or more and 95 % or less, more preferably 60 % or more and 95 % or less. Further, the pixel 284a can be arranged at a very high density, and thus the display portion 281 can have a very high pixel density. For example, the display portion 281 preferably has the pixel 284a arranged at a pixel density of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, still further preferably 6000 ppi or more and 20000 ppi or less, or 30000 ppi or less.

[0246] Such a display module 280 is very clear, and thus is suitable for a VR device or an eyeglass-type AR device such as a head-mounted display. For example, in a structure in which the display portion of the display module 280 is viewed through a lens, since the display module 280 has a display portion 281 with a very high resolution, a user cannot see pixels even if the display portion is enlarged with the lens, and thus a display with a high sense of immersion can be achieved. Further, the display module 280 is not limited to this, and can be applied to an electronic device having a smaller display portion. For example, the display module 280 is suitable for a display portion of a wearable electronic device such as a wristwatch-type device.

[0247] [Display Panel 200A] Figure 13 The display panel 200A illustrated in FIG. 12A includes a substrate 301, light emitting elements 110R, 110G, and 110B, a capacitor 240, and a transistor 310.

[0248] The substrate 301 corresponds to the substrate 291 in Figure 12A and Figure 12B .

[0249] The transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, a semiconductor substrate such as a single crystal silicon substrate can be used, for example. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is positioned between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low-resistance region 312 is a region in the substrate 301 doped with an impurity and is used as one of a source and a drain. The insulating layer 314 covers a side surface of the conductive layer 311.

[0250] Further, an element isolation layer 315 is provided between the adjacent two transistors 310 in a manner of being embedded in the substrate 301.

[0251] Further, an insulating layer 261 is provided in a manner of covering the transistor 310, and a capacitor 240 is provided over the insulating layer 261.

[0252] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween. The conductive layer 241 is used as one electrode of the capacitor 240, the conductive layer 245 is used as the other electrode of the capacitor 240, and the insulating layer 243 is used as a dielectric of the capacitor 240.

[0253] The conductive layer 241 is provided over the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided so as to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0254] The capacitor 240 is covered with an insulating layer 255a, the insulating layer 255a is covered with an insulating layer 255b, and the insulating layer 255b is covered with an insulating layer 255c.

[0255] The insulating layer 255a, the insulating layer 255b, and the insulating layer 255c are preferably formed using an inorganic insulating film. For example, it is preferable that a silicon oxide film be used as the insulating layer 255a and the insulating layer 255c and a silicon nitride film be used as the insulating layer 255b. By this means, the insulating layer 255b can be used as an etching protective film. Although an example in which a part of the insulating layer 255c is etched to be provided with a recess is described in this embodiment, the recess can not be provided in the insulating layer 255c.

[0256] The insulating layer 255c is provided with a light emitting element 110R, a light emitting element 110G, and a light emitting element 110B. The structures of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B can be referred to Embodiment Mode 2.

[0257] The display panel 200A has light emitting elements formed separately for each light emitting color, so the chromaticity changes little between low luminance light emission and high luminance light emission. Further, the organic layers 112R, 112G, and 112B are separated from each other, so crosstalk between adjacent subpixels can be suppressed even if a high-definition display panel is used. Thus, a high-definition display panel with high display quality can be implemented.

[0258] The region between adjacent light emitting elements is provided with the insulating layer 125, the resin layer 126, and the layer 128.

[0259] The pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B of the light emitting element are electrically connected to one of the source and the drain of the transistor 310 through the plug 256 embedded in the insulating layers 255a, 255b, and 255c, the conductive layer 241 embedded in the insulating layer 254, and the plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c is identical or substantially identical to the height of the top surface of the plug 256. As the plug, various conductive materials can be used.

[0260] In addition, the light emitting elements 110R, 110G, and 110B are provided with the protective layer 121. The substrate 170 is attached to the protective layer 121 by the adhesive layer 171.

[0261] No insulating layer covering the top surface end portion of the pixel electrode 111 is provided between the two pixel electrodes 111 adjacent to each other. Thus, the interval between adjacent light emitting elements can be made very small. Thus, a high-definition or high-resolution display panel can be implemented.

[0262] [Display panel 200B] Figure 14 The display panel 200B illustrated in the drawing has a structure in which the transistor 310A and the transistor 310B each of which has a channel formed in a semiconductor substrate are stacked. Note that in the description of the display panel below, the same parts as those of the display panel described earlier are sometimes omitted.

[0263] The display panel 200B has a structure in which the substrate 301B provided with the transistor 310B, the capacitor 240, and the light emitting device is attached to the substrate 301A provided with the transistor 310A.

[0264] Here, the bottom surface of the substrate 301B is provided with the insulating layer 345, and the insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers serving as protective layers, and can suppress diffusion of impurities into the substrate 301B and the substrate 301A. As the insulating layers 345 and 346, inorganic insulating films that can be used for the protective layer 121 can be used.

[0265] A plug 343 that penetrates the substrate 301B and the insulating layer 345 is provided in the substrate 301B. Here, an insulating layer 344 that covers the side surface of the plug 343 is preferably provided as a protective layer.

[0266] In addition, a conductive layer 342 is provided on the lower side of the insulating layer 345 in the substrate 301B. The conductive layer 342 is embedded in the insulating layer 335, and the bottom surfaces of the conductive layer 342 and the insulating layer 335 are planarized. In addition, the conductive layer 342 is electrically connected to the plug 343.

[0267] On the other hand, the substrate 301A is provided with a conductive layer 341 on the insulating layer 346. The conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0268] The same conductive material is preferably used for the conductive layer 341 and the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above element can be used. It is particularly preferable to use copper for the conductive layer 341 and the conductive layer 342. Thus, a Cu-Cu (copper-copper) direct bonding technique (a technique for electrically connecting Cu (copper) pads) can be employed.

[0269] [Display panel 200C] Figure 15 The display panel 200C illustrated has a structure in which the conductive layer 341 and the conductive layer 342 are joined by a bump 347.

[0270] As Figure 15 illustrated, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing the bump 347 between the conductive layer 341 and the conductive layer 342. The bump 347 can be formed using a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), or the like, for example. In addition, a solder is used as the bump 347, for example. In addition, an adhesive layer 348 can be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 can not be provided.

[0271] [Display panel 200D] Figure 16 The display panel 200D illustrated differs from the display panel 200A mainly in the structure of the transistor.

[0272] The transistor 320 is an OS transistor in which a metal oxide (also referred to as an oxide semiconductor) is used in a semiconductor layer that forms a channel.

[0273] The transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0274] The substrate 331 corresponds to Figure 12A and Figure 12B the substrate 291 in FIG. 29.

[0275] An insulating layer 332 is provided over the substrate 331. The insulating layer 332 is used as a barrier layer which prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the substrate 331 and prevents oxygen from being released from the semiconductor layer 321 to the side of the insulating layer 332. As the insulating layer 332, a film from which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used, for example.

[0276] The conductive layer 327 is provided over the insulating layer 332, and the insulating layer 326 is provided so as to cover the conductive layer 327. The conductive layer 327 is used as a first gate electrode of the transistor 320, and part of the insulating layer 326 is used as a first gate insulating layer. At least a portion of the insulating layer 326 which contacts the semiconductor layer 321 preferably uses an oxide insulating film such as a silicon oxide film. The top surface of the insulating layer 326 is preferably planarized.

[0277] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably contains a metal oxide film (also referred to as an oxide semiconductor) which exhibits semiconductor properties. The pair of conductive layers 325 is in contact with the semiconductor layer 321 and is used as a source electrode and a drain electrode.

[0278] The insulating layer 328 is provided so as to cover the top surface and side surface of the pair of conductive layers 325 and the side surface of the semiconductor layer 321 and the like, and the insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 is used as a barrier layer which prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 and the like and prevents oxygen from being released from the semiconductor layer 321. As the insulating layer 328, the same insulating film as the insulating layer 332 described above can be used.

[0279] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. The inside of the opening is embedded with the insulating layer 323 which is in contact with the top surface of the semiconductor layer 321 and the conductive layer 324. The conductive layer 324 is used as a second gate electrode, and the insulating layer 323 is used as a second gate insulating layer.

[0280] The top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are subjected to planarization treatment so that their heights are uniform or substantially uniform, and the insulating layer 329 and the insulating layer 265 are provided so as to cover them.

[0281] The insulating layers 264 and 265 are used as interlayer insulating layers. The insulating layer 329 is used as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can use the same insulating film as the insulating layer 328 and the insulating layer 332 described above.

[0282] The plug 274 electrically connected to one of the pair of conductive layers 325 is embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and a portion of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. At this time, as the conductive layer 274a, a conductive material that is not likely to diffuse hydrogen and oxygen is preferably used.

[0283] There is no particular limitation on the structure of the transistor included in the display panel of this embodiment. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor, or the like can be used. Further, a top-gate or bottom-gate transistor structure can be employed. Alternatively, a gate can be provided on the upper and lower surfaces of the semiconductor layer forming a channel.

[0284] As the transistor 320, a structure in which two gates sandwich a semiconductor layer forming a channel is employed. Further, the two gates can be connected and the transistor can be driven by supplying the same signal to the two gates. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0285] There is also no particular limitation on the crystallinity of the semiconductor material of the semiconductor layer used for the transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having crystallinity other than a single crystal semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor in which part of the semiconductor has a crystalline region) can be used. When a single crystal semiconductor or a semiconductor having crystallinity is used, the characteristics of the transistor can be inhibited from being deteriorated, and thus is preferable.

[0286] The band gap of the metal oxide of the semiconductor layer used for the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide having a wide band gap, the off-state current of the OS transistor can be reduced.

[0287] The metal oxide preferably contains at least indium or zinc, more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0288] Alternatively, the semiconductor layer of the transistor can contain silicon. As the silicon, there are amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, and the like), and the like.

[0289] As the metal oxide that can be used for the semiconductor layer, for example, an indium oxide, a gallium oxide, and a zinc oxide can be given. The metal oxide preferably contains two or more kinds selected from indium, an element M, and zinc. The element M is one or more kinds selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, the element M is preferably one or more kinds selected from aluminum, gallium, yttrium, and tin.

[0290] Note that in the case where a metal oxide is used for the semiconductor layer, the metal oxide is preferably formed by a sputtering method or an ALD method. In the case where the metal oxide is formed by a sputtering method, productivity can be improved and the film density can be increased. In the case where the metal oxide is formed by an ALD method, the coverage of the film can be improved.

[0291] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)) is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, aluminum, and zinc (also referred to as IAZO) is preferably used. Alternatively, an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO) is preferably used. Alternatively, an oxide containing indium and zinc is preferably used. Alternatively, an oxide containing indium and gallium is preferably used.

[0292] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably higher than or equal to the atomic ratio of M. As the atomic ratio of metal elements of such an In-M-Zn oxide, for example, there are a composition of In:M:Zn = 1:1:1 or its neighborhood, a composition of In:M:Zn = 1:1:1.2 or its neighborhood, a composition of In:M:Zn = 1:3:2 or its neighborhood, a composition of In:M:Zn = 1:3:4 or its neighborhood, a composition of In:M:Zn = 2:1:3 or its neighborhood, a composition of In:M:Zn = 3:1:2 or its neighborhood, a composition of In:M:Zn = 4:2:3 or its neighborhood, a composition of In:M:Zn = 4:2:4.1 or its neighborhood, a composition of In:M:Zn = 5:1:3 or its neighborhood, a composition of In:M:Zn = 5:1:6 or its neighborhood, a composition of In:M:Zn = 5:1:7 or its neighborhood, a composition of In:M:Zn = 5:1:8 or its neighborhood, a composition of In:M:Zn = 6:1:6 or its neighborhood, and a composition of In:M:Zn = 5:2:5 or its neighborhood. Note that the neighborhood of the composition includes a range of ±30% of the desired atomic ratio.

[0293] As the element M, gallium or tin is preferably used. Further, as the element M, a plurality of the above elements can be combined. In addition, as the semiconductor layer, an In:M:Zn = 40:1:10 or its neighborhood metal oxide is preferably used. Specifically, an In:Sn:Zn = 40:1:10 or its neighborhood metal oxide can be appropriately used.

[0294] For example, when a composition of In:Ga:Zn = 4:2:3 or its neighborhood is described as the atomic ratio, the following cases are included: when In is 4, Ga is higher than or equal to 1 and lower than or equal to 3, and Zn is higher than or equal to 2 and lower than or equal to 4. Further, when a composition of In:Ga:Zn = 5:1:6 or its neighborhood is described as the atomic ratio, the following cases are included: when In is 5, Ga is higher than 0.1 and lower than or equal to 2, and Zn is higher than or equal to 5 and lower than or equal to 7. Further, when a composition of In:Ga:Zn = 1:1:1 or its neighborhood is described as the atomic ratio, the following cases are included: when In is 1, Ga is higher than 0.1 and lower than or equal to 2, and Zn is higher than 0.1 and lower than or equal to 2.

[0295] The semiconductor layer can include two or more metal oxide layers having different compositions. For example, a stacked structure of a first metal oxide layer having a composition of In:M:Zn = 1:3:4 [atomic ratio] or its neighborhood and a second metal oxide layer having a composition of In:M:Zn = 1:1:1 [atomic ratio] or its neighborhood provided over the first metal oxide layer can be appropriately used. Further, as the element M, gallium or aluminum is particularly preferably used.

[0296] Further, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) can be used.

[0297] As the oxide semiconductor having crystallinity, for example, an oxide semiconductor having a CAAC (c-axis aligned crystal) structure, a poly-crystal structure (Poly-crystal), a nano-crystal (nc) structure, or the like can be used. The oxide semiconductor having crystallinity can realize a transistor with a low density of defect states and high reliability. Note that the CAAC structure is a crystal structure in which a plurality of microcrystals (typically, a plurality of IGZO microcrystals) have c-axes aligned and are connected in a manner described above without being oriented in the a-b plane. The CAAC structure has fewer grain boundaries and crystal grains in the a-b plane than the poly-crystal structure, and thus a transistor with high reliability can be realized.

[0298] The field-effect mobility of the OS transistor is very high compared to that of a transistor using amorphous silicon. Further, the leakage current between a source and a drain in the off state of the OS transistor (also referred to as off-state current) is extremely low, and thus the charge stored in a capacitor connected in series to the transistor can be held for a long time. Further, by using the OS transistor, the power consumption of a display panel can be reduced.

[0299] Further, in increasing the luminance of the light-emitting element included in the pixel circuit, the amount of current flowing through the light-emitting element needs to be increased. For this reason, the voltage between a source and a drain of the driver transistor included in the pixel circuit needs to be increased. Since the voltage resistance between a source and a drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied to the OS transistor. Thus, by using the OS transistor as the driver transistor included in the pixel circuit, the amount of current flowing through the light-emitting element can be increased, and thus the luminance of the light-emitting element can be increased.

[0300] Further, when a transistor operates in the saturation region, the change in the current between a source and a drain with respect to the change in the voltage between a gate and a source of the OS transistor is smaller than that of the Si transistor. Thus, by using the OS transistor as the driver transistor included in the pixel circuit, the current flowing between a source and a drain can be determined in detail depending on the change in the voltage between a gate and a source, and thus the amount of current flowing through the light-emitting element can be controlled. Thus, the number of gray scales of the pixel circuit can be increased.

[0301] Further, in comparison with the Si transistor, the OS transistor can flow a stable current (saturation current) even if the voltage between the source and the drain is gradually increased, with respect to the saturation characteristics of the current flowing through the transistor when operating in the saturation region. Therefore, by using the OS transistor as the drive transistor, a stable current can flow through the light emitting device even if, for example, the current-voltage characteristics of the EL device are uneven. That is, the source-drain current of the OS transistor hardly changes even if the voltage between the source and the drain is increased when operating in the saturation region, and thus the luminance of the light emitting device can be stabilized.

[0302] As described above, by using the OS transistor as the drive transistor included in the pixel circuit, "reduction in power consumption", "increase in luminance", "multi-gray scale", "suppression of unevenness in the light emitting device", and the like can be achieved.

[0303] [Display panel 200F] In Figure 17 In the display panel 200F illustrated in FIG. 27, the transistor 310 in which the channel is formed in the substrate 301 and the transistor 320 in which the channel-forming semiconductor layer contains a metal oxide are laminated.

[0304] The insulating layer 261 is provided so as to cover the transistor 310, and the conductive layer 251 is provided on the insulating layer 261. Further, the insulating layer 262 is provided so as to cover the conductive layer 251, and the conductive layer 252 is provided on the insulating layer 262. Both the conductive layer 251 and the conductive layer 252 are used as a wiring. Further, the insulating layer 263 and the insulating layer 332 are provided so as to cover the conductive layer 252, and the transistor 320 is provided on the insulating layer 332. Further, the insulating layer 265 is provided so as to cover the transistor 320, and the capacitor 240 is provided on the insulating layer 265. The capacitor 240 is electrically connected to the transistor 320 through the plug 274.

[0305] The transistor 320 can be used as a transistor included in a pixel circuit. Further, the transistor 310 can be used as a transistor included in a pixel circuit or a transistor included in a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Further, the transistor 310 and the transistor 320 can be used as a transistor included in various circuits such as an arithmetic circuit or a storage circuit.

[0306] With this structure, not only a pixel circuit but also a drive circuit or the like can be formed directly below the light emitting device, and thus the display panel can be made smaller in comparison with a case where a drive circuit is provided around a display region.

[0307] [Display panel 200G] Figure 18The display panel 200G shown uses transistor 320A (vertical transistor) instead of Figure 17 The structure of transistor 320 in the display panel 200F is shown. Alternatively, a structure using transistor 320A instead of transistor 320 can also be used. Figure 16 The display panel shown is 200D.

[0308] Figure 19A This is a cross-sectional view of the XZ plane of transistor 320A. Furthermore, Figure 19B It is a cross-sectional view of the XY plane including the wiring 440.

[0309] Transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. The oxide semiconductor 470 serves as a semiconductor layer, the insulator 430 serves as a gate insulator, and the conductor 420 serves as a gate electrode. Furthermore, wiring 450 has a region serving as one of the source and drain electrodes of transistor 320A. Additionally, wiring 440 has a region serving as the other of the source and drain electrodes of transistor 320A.

[0310] An opening 490 is provided to reach the wiring 450 through the wiring 440 and the insulator 480. The top surface of the opening 490 is a generally circular columnar shape. By adopting this structure, miniaturization or high integration of the memory cells can be achieved. Note that the side surface of the opening 490 is preferably perpendicular to the top surface of the wiring 450.

[0311] At least a portion of the oxide semiconductor 470 is disposed in the opening 490. The oxide semiconductor 470 has a region in the opening 490 that contacts the top surface of the wiring 450, a region that contacts the side surface of the wiring 440, and a region that contacts the side surface of the insulator 480.

[0312] The insulator 430 is configured such that at least a portion of it covers the opening 490. The conductor 420 is configured such that at least a portion of it is located in the opening 490. Note that the conductor 420 is preferably disposed in a manner that is embedded in the opening 490, and its top surface shape is preferably generally circular in order to improve integration.

[0313] like Figure 19A As shown, the oxide semiconductor 470 has region 470i, region 470na and region 470nb disposed in a manner that sandwiches region 470i.

[0314] The region 470na is a region of the oxide semiconductor 470 that is in contact with the wiring 450. At least part of the region 470na is used as one of a source region and a drain region of the transistor 320A. The region 470nb is a region of the oxide semiconductor 470 that is in contact with the wiring 440. At least part of the region 470nb is used as the other of the source region and the drain region of the transistor 320A. As Figure 19B indicated, the wiring 440 is in contact with the entire periphery of the oxide semiconductor 470. Thus, the other of the source region and the drain region of the transistor 320A can be formed in the entire periphery of the portion of the oxide semiconductor 470 formed in the same layer as the wiring 440.

[0315] The region 470i is a region of the oxide semiconductor 470 between the region 470na and the region 470nb. At least part of the region 470i is used as a channel formation region of the transistor 320A. That is, the channel formation region of the transistor 320A is formed in a portion of the oxide semiconductor 470 in the region between the wiring 450 and the wiring 440. Further, it can be said that the channel formation region of the transistor 320A is in a region of the oxide semiconductor 470 in contact with the insulator 480 or a region near the region.

[0316] The channel length of the transistor 320A is the distance between the source region and the drain region. In other words, it can be said that the channel length of the transistor 320A is determined depending on the thickness of the insulator 480 over the wiring 450. In Figure 19A the drawing, the channel length L of the transistor 320A is indicated by a double-headed arrow in a dashed line. The channel length L is the distance between the end of the region where the oxide semiconductor 470 and the wiring 450 are in contact and the end of the region where the oxide semiconductor 470 and the wiring 440 are in contact in a cross-sectional view. That is, the channel length L corresponds to the length of the side of the opening portion 490 side of the insulator 480 in a cross-sectional view.

[0317] In a conventional transistor, the channel length is set in accordance with the exposure limit of a photolithography method, but in one embodiment of the present application, the channel length can be set in accordance with the thickness of the insulator 480. Thus, the channel length of the transistor 320A can be set to a very fine structure (e.g., 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more or 5 nm or more) below the exposure limit of the photolithography method. By this means, the on-state current of the transistor 320A can be increased.

[0318] Further, as described above, the channel formation region, the source region, and the drain region can be formed in the opening portion 490. Thus, the occupied area of the transistor 320A can be reduced compared to a conventional transistor in which the channel formation region, the source region, and the drain region are provided separately in the XY plane. With this, the pixel density can be increased.

[0319] In this manner, in the opening portion 490, the transistor having the channel formation region along the side surface of the insulator 480 is also referred to as a vertical transistor.

[0320] In addition, in the XY plane including the channel formation region of the oxide semiconductor 470, the channel formation region is provided in the center of the oxide semiconductor 470, and the source region and the drain region are provided in the outer periphery of the oxide semiconductor 470. Figure 19B Similarly, the oxide semiconductor 470, the insulator 430, and the conductor 420 are provided in a concentric circular shape. Thus, the side surface of the conductor 420 provided in the center faces the side surface of the oxide semiconductor 470 with the insulator 430 interposed therebetween. In other words, the entire outer periphery of the oxide semiconductor 470 is a channel formation region when viewed in plan view. At this time, for example, the channel width of the transistor 320A is determined depending on the length of the outer periphery of the oxide semiconductor 470. That is, it can be said that the channel width of the transistor 320A is determined depending on the size of the maximum width of the opening portion 490 (the maximum diameter in the case where the shape of the opening portion 490 when viewed in plan view is circular). In the case where the shape of the opening portion 490 when viewed in plan view is circular, the channel width W of the transistor 320A can be calculated as "D x π". Figure 19A In the case where the shape of the opening portion 490 when viewed in plan view is circular, the maximum width D of the opening portion 490 corresponds to the diameter of the opening portion 490, and the channel width W can be calculated as "D x π". Figure 19B In the case where the shape of the opening portion 490 when viewed in plan view is circular, the maximum width D of the opening portion 490 corresponds to the diameter of the opening portion 490, and the channel width W can be calculated as "D x π". Figure 19B In the case where the shape of the opening portion 490 when viewed in plan view is circular, the maximum width D of the opening portion 490 corresponds to the diameter of the opening portion 490, and the channel width W can be calculated as "D x π".

[0321] In the case where the shape of the opening portion 490 when viewed in plan view is circular, the maximum width D of the opening portion 490 corresponds to the diameter of the opening portion 490, and the channel width W can be calculated as "D x π".

[0322] In addition, in the storage device of one embodiment of the present application, the channel length L of the transistor 320A is preferably smaller than the channel width W of the transistor 320A. The channel length L of the transistor 320A in one embodiment of the present application is greater than or equal to 0.1 times and less than or equal to 0.99 times the channel width W of the transistor 320A, preferably greater than or equal to 0.5 times and less than or equal to 0.8 times the channel width W. With such a structure, a transistor with good electrical characteristics and high reliability can be implemented.

[0323] In addition, by forming the opening portion 490 in a substantially circular shape in plan view, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged in concentric circles. Thus, the distance between the conductor 420 and the oxide semiconductor 470 is substantially uniform, so that a gate electric field can be substantially uniformly applied to the oxide semiconductor 470.

[0324] In the channel formation region of a transistor in which an oxide semiconductor is used for a semiconductor layer, it is preferable that the concentration of oxygen vacancies or impurities such as hydrogen, nitrogen, a metal element, or the like be low compared to that of a source region and a drain region. For example, the concentration of aluminum in the channel formation region of the oxide semiconductor is preferably 1 x 10 22 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 1 x 10 21 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 1 x 10 20 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 5 x 10 19 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 1 x 10 19 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 5 x 10 18 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 1 x 10 18 atoms / cm 3 Further preferably, the concentration of aluminum in the channel formation region of the oxide semiconductor is 1 x 10

[0325] In addition, hydrogen in the vicinity of an oxygen vacancy sometimes forms a defect in which hydrogen enters the oxygen vacancy (hereinafter, sometimes referred to as V O H) and generates an electron which becomes a carrier, so that V O H is also preferably reduced in the channel formation region. In this manner, the channel formation region of the transistor is a high-resistance region in which the carrier concentration is low. Thus, the channel formation region of the transistor can be said to be i-type (intrinsic) or substantially i-type.

[0326] In addition, the source region and the drain region of a transistor in which an oxide semiconductor is used for a semiconductor layer are regions in which the concentration of oxygen vacancies or V OH is high and the carrier concentration is increased, whereby the transistor is low-resistance. That is, the source region and the drain region of the transistor are n-type regions having higher carrier concentration and lower resistance than the channel formation region.

[0327] Note that in Figure 19A the side surface of the opening 490 is perpendicular to the top surface of the wiring 450, but the present application is not limited to this. For example, the side surface of the opening 490 can have a tapered shape.

[0328] Figure 20A is a cross-sectional view of the transistor 320B which is a transistor having a different structure from that of FIG. 19 in an XZ plane. Note that Figure 20B is a cross-sectional view in an XY plane.

[0329] The transistor 320B differs from the transistor 320A in that the wiring 450 is not included, is provided over the insulator 460, the wiring 440S and the wiring 440D are included instead of the wiring 440, and the shape of the oxide semiconductor 470. The wiring 440S is used as a source electrode and the wiring 440D is used as a drain electrode.

[0330] The oxide semiconductor 470 has a ring shape. Specifically, the oxide semiconductor 470 has a region in contact with the side surface of the wiring 440S, a region in contact with the side surface of the wiring 440D, and a region in contact with the side surface of the insulator 480 in the opening 490. Here, the oxide semiconductor 470 is not in contact with the top surfaces of the wiring 440S and the wiring 440D. The oxide semiconductor 470 having the above shape can be formed, for example, by processing with anisotropic etching.

[0331] As Figure 20B indicated, the width H of the wiring 440S and the wiring 440D is smaller than the maximum width D of the opening 490. At this time, the circumferential direction of the opening 490 corresponds to the channel length direction of the transistor 320B. Here, because the oxide semiconductor 470 has a ring shape, there are two current paths (i.e., channels) from the wiring 440S to the wiring 440D. Note that the oxide semiconductor 470 does not necessarily have a ring shape and can have a structure in contact with both the wiring 440S and the wiring 440D.

[0332] The channel length can be controlled in accordance with the shape and size of the opening portion 490. For example, in the case where the channel length is desired to be increased, the circumference of the opening portion 490 can be increased. Note that, in this embodiment, the shape of the opening portion 490 in plan view is circular, but the present application is not limited to this. For example, the shape of the opening portion 490 in plan view can be an ellipse, a quadrangle with rounded corners, or the like, in addition to a circle. Further, it can be a regular polygon such as an equilateral triangle, a square, a regular pentagon, or the like, or a polygon other than a regular polygon. Further, in the case of a concave polygon in which at least one of the internal angles of a star polygon or the like exceeds 180 degrees, the channel width can be increased. Further, an oval, a polygon with rounded corners, a closed curve in which a straight line and a curved line are combined, or the like can be used. In this case, the maximum width of the opening portion 490 is preferably calculated in accordance with the shape of the uppermost portion of the opening portion 490. For example, in the case where the opening portion is a square or a rectangle in plan view, the maximum width of the opening portion 490 is preferably set to the length of the line opposite to the uppermost portion of the opening portion 490.

[0333] Further, as Figure 20A indicated, the height of the oxide semiconductor 470 corresponds to the channel width W of the transistor 320B. Thus, the channel width W of the transistor 320B can be controlled in accordance with the thickness of the insulator 480. Thus, the channel width of the transistor 320B can be set to a very fine structure (e.g., 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more or 5 nm or more) below the exposure limit of a photolithography method.

[0334] The transistor 320A is a transistor in which the channel length is extremely small and the channel width is large, and a high on-state current can be obtained. On the other hand, the transistor 320B is a transistor in which the channel width is extremely small and the channel length is large, and an appropriate on-state current can be obtained, which is easy to design. The transistor 320A and the transistor 320B can be manufactured as part of the manufacturing process and can be manufactured separately on the same substrate. For example, in a display device, the transistor 320B can be used as a driver transistor for controlling current flowing through a light-emitting element, and the transistor 320A can be used as a transistor having a switching function.

[0335] At least part of this embodiment can be implemented in appropriate combination with the other embodiments and examples described in this specification.

[0336] [Explanation of Symbols] 10: eye, 20: display panel, 30R: reflecting surface, 30: reflective polarizing plate, 31: lens, 32: lens, 33: lens, 34: lens, 40: optical unit, 41: phase difference plate, 42R: reflecting surface, 42: half mirror, 43: phase difference plate, 44: linear polarizing plate, 46b: layer, 46g: layer, 46r: layer, 46: reflective polarizing plate, 50: optical unit, 51: phase difference plate, 52R: reflecting surface, 52: mirror, 60: optical device, 61: optical device, 70: pixel, 71: sub-pixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 90: frame, 91: strap, 92: display unit, 100a: display panel, 100b: display panel, 100: display panel, 101: substrate, 110a: light emitting element, 110B: light emitting element, 110b: light emitting element, 110c: light emitting element, 110G: light emitting element, 110R: light emitting element, 110W: light emitting element, 110: light emitting element, 111B: pixel electrode, 111C: connection electrode, 111G: pixel electrode, 111R: pixel electrode, 111: pixel electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 112W: organic layer, 112: organic layer, 113: common electrode, 114: common layer, 115B: conductive layer, 115G: conductive layer, 115R: conductive layer, 116B: coloring layer, 116G: coloring layer, 116R: coloring layer, 121: protective layer, 122: insulating layer, 123: insulating layer, 124a: pixel, 124b: pixel, 125: insulating layer, 126: resin layer, 128: layer, 140: connection portion, 150: pixel, 170: substrate, 171: adhesive layer, 200A: display panel, 200B: display panel, 200C: display panel, 200D: display panel, 200F: display panel, 200G: display panel, 240: capacitor, 241: conductive layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display portion, 282: circuit portion, 283a: pixel circuit, 283: pixel circuit portion, 284a: pixel, 284: pixel portion, 285: terminal portion, 286: wiring portion, 290: FPC, 291: substrate, 292: substrate, 301A: substrate, 301B: substrate, 301: substrate, 310A: transistor, 310B: transistor, 310: transistor, 311: conductive layer,312: low-resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320A: transistor, 320B: transistor, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 420: conductive body, 430: insulator, 440D: wiring, 440S: wiring, 440: wiring, 450: wiring, 460: insulator, 470i: region, 470na: region, 470nb: region, 470: oxide semiconductor, 480: insulator, 490: opening,

Claims

1. An optical device, comprising: First optical path, second optical path, and third optical path The first optical path and the second optical path share a common starting point. The third optical path has a different starting point than the first and second optical paths. The first to third optical paths converge at their respective endpoints. The light emitted from the end point of the first optical path and the light emitted from the end point of the third optical path are first linearly polarized light. The light emitted from the end of the second optical path is second-polarized light. Furthermore, the vibration directions of the first linearly polarized light and the second linearly polarized light are orthogonal.

2. The optical device according to claim 1, The first optical path is provided with a reflective polarizer, a first phase difference plate, and a half-reflective mirror. The second optical path is provided with the aforementioned reflective polarizer, second phase difference plate, and reflector. The third optical path is provided with a linear polarizer, a third phase retardation plate, the half-reflective mirror, the first phase retardation plate, and the reflective polarizer. The starting point of both the first and second optical paths is the reflective polarizer. The starting point of the third optical path is the linear polarizer. Furthermore, the endpoint of the first optical path to the third optical path is the reflective polarizer.

3. An optical device, comprising: Reflective polarizer, first phase retardation plate, second phase retardation plate, third phase retardation plate, linear polarizer, half-reflective mirror and reflective mirror, The reflective polarizer is configured such that the straight light from the light source is incident at an oblique angle. In the direction of light travel reflected by the reflective polarizer, starting from one side of the reflective polarizer, the first phase retardation plate, the half-reflective mirror, the second phase retardation plate, and the linear polarizer are arranged sequentially. Furthermore, the third phase difference plate and the reflector are sequentially arranged from one side of the reflective polarizer in the direction of light travel through the reflective polarizer.

4. An optical device, comprising: Reflective polarizers, phase retardation plates, linear polarizers, half-reflective mirrors, and reflective mirrors. The reflective polarizer is configured such that the straight light from the light source is incident at an oblique angle. In the direction of light travel reflected by the reflective polarizer, the semi-reflective mirror, the phase retardation plate, and the linear polarizer are sequentially arranged from one side of the reflective polarizer. Furthermore, the reflector is provided in the direction of light travel through the reflective polarizer.

5. The optical device according to claim 4, wherein the reflective polarizer has a cholesteric liquid crystal.

6. The optical device according to any one of claims 2 to 5, wherein the semi-reflective mirror and the reflective mirror have a concave curved surface on one side of the reflective polarizer.

7. The optical device according to any one of claims 3 to 5, wherein a lens is provided between the light source and the reflective polarizer and between the reflector and the reflective polarizer, or between one or both.

8. An electronic device, comprising: The optical device as described in claim 7; as well as The light source is a display panel comprising organic EL elements.

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