Semiconductor wafer bevel structure, apparatus, and method

Abstract

The application relates to the field of semiconductor devices, in particular to a semiconductor wafer chamfer structure, device and method, which comprises a atomization layer, the upper surface of the atomization layer is fixedly connected with a cooling layer, the upper surface of the cooling layer is detachably fixed with a polishing layer, the inside of the cooling layer is provided with fractal micro-channels, the fractal micro-channels comprise a liquid collecting cavity located in the center of the cooling layer, the side surface of the liquid collecting cavity is symmetrically provided with primary channels in the center, and the tail ends of the primary channels are dispersively fixed with secondary channels; through the setting of the tree-shaped fractal micro-channels of the fractal micro-channels, the huge specific surface area and the fractal structure realize the efficient flow of the cooling liquid, the heat is quickly taken away at the source, the cooling efficiency is improved by several times, the temperature of the grinding area is greatly reduced, the thermal stress damage is eliminated, higher grinding efficiency parameters are allowed to be used, and the centrifugal force generated during rotation is used to drive the cooling liquid to flow through the primary channels and the secondary channels, so that the high-efficiency cooling can be realized without the energy consumption of external pumps.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more specifically to a semiconductor wafer chamfering structure, apparatus, and method. Background Technology

[0002] A wafer is a silicon wafer used to manufacture silicon semiconductor circuits. Its raw material is silicon. High-purity polycrystalline silicon is dissolved and doped with silicon crystal seed crystals, and then slowly pulled out to form a cylindrical single-crystal silicon. After grinding, polishing and slicing, the silicon crystal rod is formed into a silicon wafer, which is a wafer. During the production process, the wafer needs to have its side edges chamfered. Chamfering is an important process in semiconductor manufacturing, which aims to remove the sharp corners of the wafer edges to improve its mechanical strength and machinability, and reduce the risk of cracks and breakage.

[0003] When performing wafer chamfering, the contact surface between the grinding wheel and the wafer is prone to overheating. Excessive temperature can lead to micro-cracks and chipping at the wafer edge. Chipping damages the wafer dicing path, resulting in a decrease in the yield of subsequent photolithography processes. Current cooling methods mostly involve spraying water onto the contact surface between the grinding wheel and the wafer using an external water source during chamfering. This causes the water film to change the coefficient of friction between the grinding wheel and the wafer, leading to a deterioration in the uniformity of the chamfer width and an increase in rework rate of 25%. Furthermore, water stains left on the grinding wheel can easily carry grinding debris, which forms hard stains after drying, requiring frequent machine shutdowns for cleaning and affecting production efficiency.

[0004] Therefore, the present invention provides a semiconductor wafer chamfering structure, apparatus and method that eliminates the need to spray water onto the contact surface between the wafer and the grinding wheel, and can quickly remove heat from the source to achieve efficient cooling of the grinding wheel. Summary of the Invention

[0005] To address the problems in existing technologies where external water sources spray water onto the contact surface for cooling during chamfering, resulting in reduced wafer processing quality and efficiency, a semiconductor wafer chamfering structure, device, and method have been designed.

[0006] The technical solution adopted by the present invention to solve its technical problem is: a semiconductor wafer chamfering structure, applied to a semiconductor wafer chamfering device, including a base and a motor inside it. The motor is rotatably connected to an atomizing layer through a connecting column. A cooling layer is fixedly connected to the upper surface of the atomizing layer. A polishing layer is detachably fixed to the upper surface of the cooling layer. A fractal microchannel is provided inside the cooling layer. A liquid injection pipe is provided above the fractal microchannel and communicates with it. The fractal microchannel includes a liquid collection cavity located at the center of the cooling layer. A primary channel is symmetrically arranged on the side surface of the liquid collection cavity. The diameter of the first end of the primary channel is larger than that of the last end. Secondary channels are dispersedly fixed at the end of the primary channel.

[0007] The fractal microchannel is designed to allow the coolant inside the collection chamber to flow into the primary channel through the centrifugal force generated when the cooling layer rotates, and then diffuses into the secondary channel to cool the polishing layer. This cooling process starts at the source and does not require an external cooling source.

[0008] Furthermore, the radius of the cooling layer is R, and the contact point between the primary channel and the secondary channel is set at 0.618R, so that the coolant is evenly distributed to each secondary channel with a flow deviation of <8%, which improves the heat dissipation uniformity and the heat dissipation efficiency is improved compared with the conventional midpoint layout. The temperature rise is also effectively reduced, and the wafer edge breakage rate is reduced.

[0009] Furthermore, the end of the secondary channel is set at 0.87R, which is located in the core heat source area generated by chamfering friction. The coolant driven by centrifugal force reaches a critical acceleration state here to avoid backflow or stagnation. The end of the secondary channel is inclined downward in an involute shape (15° is the best angle) to guide the coolant to flow smoothly into the atomization layer.

[0010] Furthermore, the distance between any two adjacent secondary channels connected at the end of the primary channel is h1, and the distance between any two close secondary channels connected at the end of adjacent primary channels is h2, where h1 = h2.

[0011] Furthermore, the atomizing layer includes a plate body fixedly connected to the cooling layer. A liquid collection tank is provided inside the plate body. A first guide groove is provided on the upper surface of the liquid collection tank and communicates with it. The first guide groove is connected to the secondary channel in a one-to-one correspondence. A second guide groove is provided on the side surface of the liquid collection tank and communicates with it. An atomizing plate is fixedly connected to the side surface of the plate body.

[0012] Furthermore, a mist collection assembly is provided on the outer side of the base. The mist collection assembly includes a pressure stabilizing ring fixedly connected to the base. A mist collection groove is fixedly connected above the pressure stabilizing ring via a connecting rod. The mist collection groove is located on the outer side of the atomizing plate. A delivery pipe is fixedly connected between the pressure stabilizing ring and the mist collection groove. The side surface of the pressure stabilizing ring is connected to an external receiving box via a flexible hose. A negative pressure pump is provided inside the receiving box.

[0013] Furthermore, a limiting block is fixedly connected to the upper surface of the cooling layer, the liquid injection pipe is located inside the limiting block, the polishing layer slides relative to the outer surface of the limiting block, and a fixing ring is provided on the outer surface of the limiting block, with the fixing ring tightly attached to the upper part of the polishing layer.

[0014] Furthermore, the cooling layer has aluminum sheets inside, and the aluminum sheets can be engaged with the inner wall of the polishing layer.

[0015] The present invention also provides a semiconductor wafer chamfering method, based on the above-described semiconductor wafer chamfering structure, comprising the following steps:

[0016] S1. Start the motor and use the motor to rotate the polishing layer to chamfer the wafer;

[0017] S2. The cooling layer and the polishing layer rotate synchronously. The coolant inside the liquid collection chamber flows to the primary channel under the action of centrifugal force, and then diffuses into the secondary channel. The flowing coolant carries away the heat generated by the polishing layer during chamfering and cools the polishing layer.

[0018] S3. The atomizing layer and the polishing layer rotate synchronously. The coolant in the secondary channel flows into the liquid collection tank through the first guide groove under the action of centrifugal force. Then, under the action of centrifugal force generated during high-speed rotation, it impacts the atomizing plate through the second guide groove and is atomized and sprayed out.

[0019] S4. When the external negative pressure pump starts, a stable negative pressure space is formed inside the pressure stabilizing ring. The delivery pipe and the mist collection tank form a negative pressure space. The mist collection tank absorbs the atomized coolant sprayed by the atomizing plate and delivers it to the collection box through the hose.

[0020] The beneficial effects of this invention are:

[0021] (1) The semiconductor wafer chamfering structure, device and method of the present invention are described in which fractal microchannels are close to the lower surface of the polishing layer to achieve zero-distance cooling of the heat source, which improves the cooling efficiency by several times and greatly reduces the risk of thermal damage to the wafer. The fractal microchannel adopts a tree-shaped fractal microchannel setting. The contact point between the primary channel and the secondary channel is set at 0.618R (the radius of the cooling layer is R). The end of the secondary channel is set at 0.87R. The end of the secondary channel adopts an involute downward tilt of 15°. The secondary channels are evenly distributed circumferentially. The huge specific surface area and fractal structure of the fractal microchannel realize the efficient flow of the coolant, realize ultra-efficient heat exchange, improve the heat transfer efficiency, significantly reduce the temperature of the polishing area, eliminate thermal stress damage, improve the quality and consistency of the chamfered edge, allow the chamfering speed to increase by 50% and the microcrack rate to decrease by 90%, improve the wafer chamfering processing efficiency and quality, and improve production efficiency.

[0022] (2) The semiconductor wafer chamfering structure, device and method of the present invention adopts centrifugal force self-drive to replace mechanical pump. The powerful centrifugal force generated by the high speed rotation of the cooling layer throws the coolant radially out of the liquid collection chamber and makes it flow through the primary channel and the secondary channel, thereby cooling the polishing layer. There is no external pump energy consumption. At the same time, the micro-pyramidal grooves on the surface of the atomizing plate work together with the centrifugal force to achieve passive atomization. After the coolant is atomized, it can greatly increase the liquid surface area and quickly exchange heat with the surrounding environment to cool it down. Attached Figure Description

[0023] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0024] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0025] Figure 2 This is a schematic diagram showing the disassembled parts of the present invention;

[0026] Figure 3 This is a multi-angle split view of the present invention;

[0027] Figure 4 This is a cross-sectional view of the internal structure of the present invention;

[0028] Figure 5 This is a schematic diagram of the cooling layer of the present invention;

[0029] Figure 6 This is a schematic cross-sectional view of the cooling layer of the present invention;

[0030] Figure 7 This is a schematic diagram of the internal structure of the cooling layer of the present invention;

[0031] Figure 8 for Figure 7 Enlarged diagram of point B in the diagram;

[0032] Figure 9 for Figure 4 An enlarged diagram of point A in the diagram.

[0033] In the diagram: 1. Base; 2. Motor; 3. Atomizing layer; 31. Plate; 32. Liquid collection tank; 33. First guide groove; 34. Second guide groove; 35. Atomizing plate; 4. Cooling layer; 5. Polishing layer; 7. Fog collection assembly; 71. Pressure stabilizing ring; 72. Fog collection tank; 73. Delivery pipe; 9. Fractal microchannel; 91. Liquid collection chamber; 92. Primary channel; 93. Secondary channel; 10. Injection pipe; 11. Limiting block; 12. Fixing ring; 13. Aluminum sheet. Detailed Implementation

[0034] To make the technical means, technical features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0035] Example: Figures 1-9 As shown, the semiconductor wafer chamfering structure of the present invention is applied to a semiconductor wafer chamfering device, including a base 1 and a motor 2 inside it. The motor 2 is rotatably connected to an atomizing layer 3 via a connecting column. A cooling layer 4 is fixedly connected to the upper surface of the atomizing layer 3. A polishing layer 5 is detachably fixed to the upper surface of the cooling layer 4. A fractal microchannel 9 is provided inside the cooling layer 4. A liquid injection pipe 10 is provided above the fractal microchannel 9 and communicates with it. The fractal microchannel 9 includes a liquid collection cavity 91 located at the center of the cooling layer 4. A primary channel 92 is symmetrically arranged on the side surface of the liquid collection cavity 91. Secondary channels 93 are dispersedly fixed at the ends of the primary channel 92.

[0036] In this embodiment, the atomizing layer 3, cooling layer 4, and polishing layer 5 are rotated by the motor 2. When the polishing layer 5 rotates, it contacts the side of the wafer through the groove on its side to perform chamfering and polishing. During chamfering, the large amount of heat generated by the polishing layer 5 is mainly concentrated at the outer edge of the polishing layer 5. Coolant is injected into the liquid collection chamber 91 through the liquid injection pipe 10. The coolant can be a fluorinated liquid. The centrifugal force generated when the cooling layer 4 rotates causes the coolant inside the liquid collection chamber 91 to flow to the primary channel 92, and then diffuses into the secondary channel 93. The coolant flows through the primary channel 92 and the secondary channel 93 to uniformly cool the polishing layer 5. Since the fractal microchannel 9 is close to the polishing layer 5, the huge specific surface area of ​​the fractal microchannel 9 and the efficient flow of coolant brought by the fractal structure achieve ultra-efficient heat exchange. No external cooling source is required, so that the heat is quickly removed at the source, the cooling efficiency is improved several times, and the risk of wafer thermal damage is greatly reduced. Then the coolant in the secondary channel 93 flows into the atomizing layer 3 and is atomized and sprayed out.

[0037] Specifically, there are several primary channels 92 and secondary channels 93. In this embodiment, there are 8 primary channels 92, and the diameter of the first end of the primary channel 92 is larger than that of the last end. There are 64 secondary channels 93. Each primary channel 92 is connected to 8 secondary channels 93 at its end. The distance between any two adjacent secondary channels 93 connected at the end of the primary channel 92 is h1, and the distance between any two close secondary channels 93 connected at the end of adjacent primary channels 92 is h2, where h1=h2.

[0038] In this embodiment, the primary channel 92 and the secondary channel 93 are evenly distributed circumferentially to eliminate cooling dead zones, improve the uniformity of cooling, and make the surface temperature difference of the polished layer 5 ≤ 5℃. The diameter of the first end of the primary channel 92 is larger than that of the end. The large diameter at the first end reduces the impact force when the fluid enters the branch and avoids the generation of eddies. The small diameter outlet ensures that the fluid flows out at a higher speed, thereby improving the cooling efficiency.

[0039] Specifically, the radius of the cooling layer 4 is R, and the contact point between the primary channel 92 and the secondary channel 93 is set at 0.618R.

[0040] In this embodiment, since the heat load on the polishing layer 5 is concentrated in the outer ring during wafer chamfering, setting the contact point between the primary channel 92 and the secondary channel 93 at 0.618R allows the coolant to be distributed more evenly to each secondary channel 93, with a flow deviation of <8%, and the heat dissipation efficiency is better than when it is set at other positions (for example, the heat dissipation efficiency is increased by about 40% compared to the conventional midpoint layout at 0.5R, and the temperature rise is reduced by about 34%). The temperature rise is also effectively controlled, thereby reducing the wafer edge breakage rate. It can simultaneously achieve uniform flow distribution and maximize heat source coverage efficiency, thus improving heat dissipation uniformity.

[0041] Specifically, the end of the secondary channel 93 is set at 0.87R, and the end of the secondary channel 93 is inclined downward in an involute shape.

[0042] In this embodiment, the 0.87R point is located in the core heat source area generated by chamfering friction, and the end is positioned in the peak heat flux density area, which can directly flush the heat source. The centrifugal force-driven coolant reaches a critical acceleration state here, avoiding coolant backflow or stagnation. The involute downward slope of the end of the secondary channel 93, specifically 15°, can guide the coolant to flow smoothly into the first guide groove 33, ensuring that the fluid enters the collection tank 32 without impact, while realizing thermal management optimization and low-consumption fluid transmission.

[0043] Specifically, the atomizing layer 3 includes a plate 31 fixedly connected to the cooling layer 4. A liquid collection tank 32 is provided inside the plate 31. A first guide groove 33 is provided on the upper surface of the liquid collection tank 32 and communicates with it. The first guide groove 33 is connected to the secondary channel 93 in a one-to-one correspondence. A second guide groove 34 is provided on the side surface of the liquid collection tank 32 and communicates with it. An atomizing plate 35 is fixedly connected to the side surface of the plate 31.

[0044] In this embodiment, during the rotation and chamfering, the coolant in each secondary channel 93 flows into the collection tank 32 through the corresponding first guide groove 33. Under the action of centrifugal force generated during high-speed rotation, the coolant in the collection tank 32 flows outward through the second guide groove 34 and impacts the atomizing plate 35 to atomize and spray out. Micro-pyramidal arrays are provided on the atomizing plate 35 at the positions corresponding to the second guide groove 34. Centrifugal force drives the coolant in the collection tank 32 to flow through the second guide groove 34 and spray outward at high speed, impacting the atomizing plate 35. At the same time, the Coriolis force generated by rotation enhances the diffusion effect of the droplets. The micro-groove design on the surface of the atomizing plate 35 can also generate the Venturi effect, further reducing local pressure and promoting atomization. After the coolant is atomized, it can greatly increase the liquid surface area and quickly exchange heat with the surrounding environment to cool it down.

[0045] Specifically, the cooling layer 4 has an aluminum sheet 13 inside, and the aluminum sheet 13 can be engaged with the inner wall of the polishing layer 5.

[0046] In this embodiment, the radius of the cooling layer 4 is R, and the aluminum sheet 13 is uniformly arranged at 0.8R in the circumferential direction. Since the frictional heat generated by the contact between the wafer edge and the working layer is most concentrated at the outer edge, the aluminum sheet 13 is arranged at 0.8R, which can quickly conduct most of the heat generated by the polishing layer 5 to the cooling layer 4, thereby increasing the cooling efficiency.

[0047] Specifically, a mist collection assembly 7 is provided on the outer side of the base 1. The mist collection assembly 7 includes a pressure stabilizing ring 71 fixedly connected to the base 1. A mist collection groove 72 is fixedly connected above the pressure stabilizing ring 71 via a connecting rod. The mist collection groove 72 is located on the outer side of the atomizing plate 35. A delivery pipe 73 is fixedly connected between the pressure stabilizing ring 71 and the mist collection groove 72. The side surface of the pressure stabilizing ring 71 is connected to the external receiving box via a flexible hose. A negative pressure pump is provided inside the receiving box.

[0048] In this embodiment, under the action of an external negative pressure pump, a stable negative pressure space is formed inside the pressure stabilizing ring 71. The delivery pipe 73 and the mist collection tank 72 form a negative pressure space. The mist sprayed from the atomizing plate 35 flies into the mist collection tank 72 under the action of centrifugal force. Under the action of the external negative pressure pump, the mist collection tank 72 adsorbs the mist. After passing through the delivery pipe 73 and the pressure stabilizing ring 71, the mist is transported to the collection box for recycling through a hose.

[0049] Specifically, a limiting block 11 is fixedly connected to the upper surface of the cooling layer 4, the liquid injection pipe 10 is located inside the limiting block 11, the polishing layer 5 slides relative to the outer surface of the limiting block 11, and a fixing ring 12 is provided on the outer surface of the limiting block 11, with the fixing ring 12 closely attached to the upper part of the polishing layer 5.

[0050] In this embodiment, when the polishing layer 5 wears out after a period of use, the screws on the fixing ring 12 are removed, the fixing ring 12 is slid upward, and then the polishing layer 5 is removed upward for replacement. The new polishing layer 5 is slid downward along the outer surface of the limiting block 11, and then the fixing ring 12 is slid downward along the outer surface of the limiting block 11. Then the screws are tightened for fixation, which facilitates the replacement of the polishing layer 5.

[0051] A semiconductor wafer chamfering method based on semiconductor wafer chamfering structure includes the following steps:

[0052] S1. Start motor 2, and use motor 2 to drive the polishing layer 5 to rotate and chamfer the wafer;

[0053] S2. The cooling layer 4 and the polishing layer 5 rotate synchronously. The coolant inside the liquid collection chamber 91 flows to the primary channel 92 under the action of centrifugal force, and then diffuses into the secondary channel 93. The flowing coolant carries away the heat generated by the polishing layer 5 during chamfering and cools the polishing layer 5.

[0054] S3, the atomizing layer 3 and the polishing layer 5 rotate synchronously. The coolant in the secondary channel 93 flows into the liquid collection tank 32 through the first guide groove 33 under the action of centrifugal force. Then, under the action of centrifugal force generated during high-speed rotation, it impacts the atomizing plate 35 through the second guide groove 34 and is atomized and sprayed out.

[0055] S4. The external negative pressure pump starts, and a stable negative pressure space is formed inside the pressure stabilizing ring 71. The delivery pipe 73 and the mist collection tank 72 form a negative pressure space. The mist collection tank 72 absorbs the atomized coolant sprayed by the atomizing plate 35. After passing through the delivery pipe 73 and the pressure stabilizing ring 71, it is delivered to the collection box through the hose.

[0056] Working principle: Motor 2 is started, driving the atomizing layer 3, cooling layer 4, and polishing layer 5 to rotate. As the polishing layer 5 rotates, it contacts the wafer side through its side grooves to chamfer and polish the wafer. During chamfering, the polishing layer 5 generates a large amount of heat, mainly concentrated at its outer edge. The heat generated by the polishing layer 5 is quickly conducted to the cooling layer 4 through the aluminum sheet 13, allowing for rapid cooling of the polishing layer 5 via the fractal microchannels 9. Coolant is injected into the collection chamber 91 through the injection pipe 10. Under the centrifugal force generated by the rotation of the cooling layer 4, the coolant in the collection chamber 91 is evenly diffused into each primary channel 92, and from the primary channels 92, it continues to diffuse into each secondary channel. Within channel 93, the coolant flows through primary channel 92 and secondary channel 93 to uniformly cool the polishing layer 5, allowing heat to be quickly removed at the source, increasing cooling efficiency several times. Subsequently, the coolant in each secondary channel 93 flows into the collection tank 32 through the corresponding first guide groove 33. Under the action of centrifugal force generated during high-speed rotation, the coolant in the collection tank 32 flows outward through the second guide groove 34, impacting the atomizing plate 35 and being atomized and sprayed out. Under the action of centrifugal force, the mist flies into the mist collection tank 72. Under the action of an external negative pressure pump, the mist collection tank 72 absorbs the mist sprayed from the atomizing plate 35. After passing through the delivery pipe 73 and the pressure stabilizing ring 71, the mist is transported to the collection box for recycling through a hose.

[0057] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of protection claimed by the present invention. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A semiconductor wafer chamfering structure, comprising a base and an internal motor, characterized in that: The motor is rotatably connected to an atomizing layer via a connecting column. A cooling layer is fixedly connected to the upper surface of the atomizing layer. A polishing layer is detachably fixed to the upper surface of the cooling layer. A fractal microchannel is provided inside the cooling layer. A liquid injection pipe is provided above the fractal microchannel and communicates with it. The fractal microchannel includes a liquid collection chamber located at the center of the cooling layer. A primary channel is symmetrically arranged on the side surface of the liquid collection chamber. The diameter of the first end of the primary channel is larger than that of the last end. Secondary channels are dispersedly fixed at the end of the primary channel. Fractal microchannels are designed to allow the coolant inside the collection chamber to flow into the primary channel through the centrifugal force generated when the cooling layer rotates, and then diffuse into the secondary channel to rapidly cool the polishing layer. The atomizing layer includes a plate body fixedly connected to the cooling layer. A liquid collection tank is provided inside the plate body. A first guide groove is provided on the upper surface of the liquid collection tank and communicates with it. The first guide groove is connected to the secondary channel in a one-to-one correspondence. A second guide groove is provided on the side surface of the liquid collection tank and communicates with it. An atomizing plate is fixedly connected to the side surface of the plate body. A mist collection assembly is provided on the outer side of the base. The mist collection assembly includes a pressure stabilizing ring fixedly connected to the base. A mist collection groove is fixedly connected above the pressure stabilizing ring via a connecting rod. The mist collection groove is located on the outer side of the atomizing plate. A delivery pipe is fixedly connected between the pressure stabilizing ring and the mist collection groove. The side surface of the pressure stabilizing ring is connected to an external receiving box via a flexible hose. A negative pressure pump is provided inside the receiving box. The upper surface of the cooling layer is fixedly connected to a limiting block, the liquid injection tube is located inside the limiting block, the polishing layer slides relative to the outer surface of the limiting block, and a fixing ring is provided on the outer surface of the limiting block, with the fixing ring tightly attached to the upper part of the polishing layer.

2. The semiconductor wafer chamfer structure according to claim 1, characterized in that: The radius of the cooling layer is R, and the contact point between the primary channel and the secondary channel is set at 0.618R to evenly distribute the coolant to each secondary channel.

3. The semiconductor wafer chamfer structure according to claim 2, characterized in that: The end of the secondary channel is the core heat source area generated by chamfering friction, which is set at 0.87R. The rotation of the cooling layer causes the centrifugal force-driven coolant to reach a critical acceleration state. The end of the secondary channel is involute-shaped and tilted downwards to guide the coolant to flow smoothly into the atomization layer.

4. The semiconductor wafer chamfer structure according to claim 1, characterized in that: The distance between any two adjacent secondary channels connected at the end of the primary channel is h1, and the distance between any two close secondary channels connected at the end of adjacent primary channels is h2, where h1 = h2.

5. A semiconductor wafer chamfer structure according to claim 1, characterized in that: The cooling layer has an aluminum sheet inside, and the aluminum sheet can be engaged with the inner wall of the polishing layer.

6. A semiconductor wafer chamfering device, characterized in that: Includes the semiconductor wafer chamfer structure as described in any one of claims 1-5.

7. A method for chamfering semiconductor wafers, characterized in that: The semiconductor wafer chamfering apparatus according to claim 6 includes the following steps: S1. Start the motor and use the motor to rotate the polishing layer to chamfer the wafer; S2. The cooling layer and the polishing layer rotate synchronously. The coolant inside the liquid collection chamber flows to the primary channel under the action of centrifugal force, and then diffuses into the secondary channel. The flowing coolant carries away the heat generated by the polishing layer during chamfering and cools the polishing layer. S3. The atomizing layer and the polishing layer rotate synchronously. The coolant in the secondary channel flows into the liquid collection tank through the first guide groove under the action of centrifugal force. Then, under the action of centrifugal force generated during high-speed rotation, it impacts the atomizing plate through the second guide groove and is atomized and sprayed out. S4. When the external negative pressure pump starts, a stable negative pressure space is formed inside the pressure stabilizing ring. The delivery pipe and the mist collection tank form a negative pressure space. The mist collection tank absorbs the atomized coolant sprayed by the atomizing plate and delivers it to the collection box through the hose.

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