Simulation method, system and equipment for adaptive scanning of semiconductor device, storage medium and program product

Abstract

The invention relates to the technical field of computer aided design of semiconductor devices, discloses a simulation method and system for self-adaptive scanning of a semiconductor device, electronic equipment, a readable storage medium and a program product, and aims at solving the problem that in the prior art, under a simulation scene with complex physical quantity changes, the simulation efficiency is high. The technical problem that simulation times are redundant or simulation results are distorted due to a fixed scanning step length mode is solved. Comprising the steps that scanning parameters are obtained in response to a simulation request, and the scanning parameters comprise a scanning step length, a scanning starting point and a scanning end point; starting from the scanning starting point, constructing a scanning value according to the current scanning step length, and executing simulation based on the scanning value; obtaining the number of iterations in the current simulation process; the convergence of the simulation process is evaluated based on the number of iterations, and the scanning step length is adjusted according to the convergence evaluation result; constructing a next scanning value based on the adjusted scanning step length; and circularly executing simulation solution and scanning step length adjustment until a scanning value reaches a scanning end point, and completing simulation.

Description

Technical Field

[0001] This invention relates to the field of computer-aided design of semiconductor devices, and more particularly to a simulation method, system, electronic device, computer storage medium, and computer program product for adaptive scanning of semiconductor devices. Background Technology

[0002] Numerical simulation technology plays a crucial role in the design and manufacturing of semiconductor devices. It predicts the electrical characteristics of devices under different bias voltages, temperatures, or frequencies by constructing physical models of the devices in a computer and solving related partial differential equations (such as the drift-diffusion equation and the Poisson equation), thereby guiding process optimization and design iteration. Parameter scanning is a fundamental operation in simulation, involving continuous variation of variables such as voltage, current, or time to obtain key performance curves such as the device's IV (voltage-current) characteristics and transient response.

[0003] In actual simulations, the choice of scan step size has a decisive impact on the efficiency and stability of the simulation. Current technologies generally use a fixed scan step size. However, in regions with good convergence, a fixed scan step size cannot fully utilize the convergence advantage, leading to redundant simulation iterations, wasted computational resources, and a significant increase in simulation time and memory usage. Conversely, in regions with poor convergence, a fixed scan step size cannot be adjusted in time to address increased nonlinearity or drastic changes in physical quantities, easily causing Newton's iteration method to fail, resulting in simulation interruptions or distorted results.

[0004] Therefore, there is an urgent need for a technical solution that can dynamically and adaptively adjust the scan step size based on real-time convergence and changes in physical quantities during the parameter scanning process of the solver, thereby achieving a balance between efficiency and stability. Summary of the Invention

[0005] The main objective of this invention is to solve the technical problem that in the prior art, when simulating semiconductor devices, the fixed scan step size method cannot cope with simulation scenarios with complex changes in physical quantities, which easily leads to redundant simulation times or distorted simulation results, resulting in poor simulation performance.

[0006] The first aspect of this invention provides a simulation method for adaptive scanning of a semiconductor device, comprising: In response to a simulation request, scan parameters are obtained, wherein the scan parameters include an initial scan step size, a scan start point, and a scan end point; Starting from the scan start point, construct scan values ​​with the current scan step size, and perform simulation based on the scan values; When the simulation is successful, obtain the number of iterations in the current simulation process; The convergence of this simulation process is evaluated based on the number of iterations, and the scan step size is adjusted according to the convergence evaluation results. The next scan value is constructed based on the adjusted scan step size; The simulation is performed repeatedly, and the scan step size is adjusted until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

[0007] Optionally, in a first implementation of the first aspect of the present invention, after constructing scan values ​​with the current scan step size starting from the scan start point and performing simulation based on the scan values, the method further includes: If the simulation fails, a rollback is enabled, the current scan step size is reduced, the scan value is reconstructed, the simulation is performed based on the reconstructed scan value, and the number of iterations is obtained.

[0008] Optionally, in a second implementation of the first aspect of the present invention, a step size adjustment function is further included, wherein the expression of the step size adjustment function is: ; Among them, the This indicates the adjusted scan step size, the Indicates the scan step size of the previous step. Indicates the step size adjustment value; The process of evaluating the convergence of the simulation process based on the number of iterations and adjusting the scan step size according to the convergence evaluation results includes: When the number of simulation iterations is greater than the preset optimal number of iterations, the convergence in the current scanning step is poor. The step size adjustment value is set to be less than 0, and the adjusted scanning step size is calculated based on the step size adjustment function. When the number of simulation iterations is less than the preset optimal number of iterations, the convergence of the current scanning step is good. The step size adjustment value is set to be greater than 0, and the adjusted scanning step size is calculated based on the step size adjustment function.

[0009] Optionally, in a third implementation of the first aspect of the present invention, the calculation expression for the step size adjustment value is: ; Among them, the Indicates the step size adjustment value; the represents the adaptive coefficient, which ranges from [0, 1); This represents the function for adjusting the optimal number of iterations. This represents the sum of the maximum relative changes of physical quantities during the simulation fitting process, which monotonically increases as the gradient change of the fitted physical quantities increases. Indicates the preset optimal number of iterations; This indicates the number of the previous iteration.

[0010] Alternatively, in a fourth implementation of the first aspect of the invention, The expression for the optimal iteration number adjustment function is: ; in, and It is a constant, and .

[0011] Optionally, in a fifth implementation of the first aspect of the invention, the constant... The value range of the constant is [1.2, 1.8]. The value range is [0.2, 0.8], and .

[0012] A second aspect of the present invention provides a simulation system for adaptive scanning of semiconductor devices, comprising: The parameter acquisition module is used to acquire scanning parameters in response to a simulation request, wherein the scanning parameters include the initial scanning step size, the scanning start point, and the scanning end point; The scan value construction module is used to construct scan values ​​starting from the scan start point and using the current scan step size; The simulation execution module is used to perform simulation based on the scan values; The step size adjustment module is used to obtain the number of iterations in the current simulation process when the simulation solution is successful; evaluate the convergence of the current simulation process based on the number of iterations, and adjust the scan step size according to the convergence evaluation result; The scan value construction module is also used to construct the next scan value based on the adjusted scan step size; The loop execution module is used to repeatedly perform simulation solutions and adjust the scan step size until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

[0013] A third aspect of the present invention provides a simulation apparatus for adaptive scanning of a semiconductor device, comprising: a memory and at least one processor, wherein the memory stores instructions; the at least one processor invokes the instructions in the memory to cause the simulation apparatus for adaptive scanning of the semiconductor device to perform the steps of the above-described simulation method for adaptive scanning of a semiconductor device.

[0014] A fourth aspect of the present invention provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the steps of the above-described simulation method for adaptive scanning of a semiconductor device.

[0015] A fifth aspect of the present invention provides a computer program product comprising a computer program / instructions that, when executed by a processor, implement the steps of the simulation method for adaptive scanning of a semiconductor device as described above.

[0016] The technical solution provided by this invention involves acquiring scan parameters in response to a simulation request. These scan parameters include an initial scan step size, a scan start point, and a scan end point. Starting from the scan start point, a scan value is constructed using the current scan step size, and simulation is performed based on this scan value. When the simulation is successfully solved, the number of iterations in the current simulation process is obtained. The convergence of the current simulation process is evaluated based on the number of iterations, and the scan step size is adjusted according to the convergence evaluation results. The next scan value is constructed based on the adjusted scan step size. The simulation solution and scan step size adjustment are performed iteratively until the constructed scan value reaches the scan end point, thus completing the simulation of the semiconductor device. The beneficial effects of this method are: it can adaptively adjust the scan step size according to the simulation effect, reduce the redundancy of the simulation iterations or avoid the distortion of the simulation results, and can achieve a balance between simulation efficiency and stability, thereby improving the simulation effect.

[0017] The system, electronic device, computer-readable storage medium, and computer program product provided by this invention also solve the corresponding technical problems. Attached Figure Description

[0018] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 This is a flowchart illustrating the first embodiment of the simulation method for adaptive scanning of semiconductor devices in this invention. Figure 2 This is a flowchart illustrating a second embodiment of the simulation method for adaptive scanning of semiconductor devices according to the present invention. Figure 3 This is a schematic diagram of an embodiment of a simulation system for adaptive scanning of semiconductor devices according to the present invention; Figure 4 This is a schematic diagram of an embodiment of a simulation device for adaptive scanning of semiconductor devices according to an embodiment of the present invention; Figure 5 This is a schematic diagram illustrating the principle of a computer-readable medium according to an embodiment of the present invention. Detailed Implementation

[0019] Exemplary embodiments of the invention will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limiting the invention to the embodiments set forth herein. Rather, these exemplary embodiments are provided to make the invention more comprehensive and complete, and to facilitate a full communication of the inventive concept to those skilled in the art. The same reference numerals in the drawings denote the same or similar elements, components, or parts, and therefore repeated descriptions of them will be omitted.

[0020] Subject to the technical concept of this invention, the features, structures, characteristics or other details described in a particular embodiment may be combined in one or more other embodiments in a suitable manner.

[0021] In the description of specific embodiments, the features, structures, characteristics, or other details described in this invention are intended to enable those skilled in the art to fully understand the embodiments. However, it is not excluded that those skilled in the art can practice the technical solutions of this invention without one or more of the specific features, structures, characteristics, or other details.

[0022] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0023] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0024] The terms “and / or” or “and / or” include all combinations of any one or more of the listed items.

[0025] Please see Figure 1 The first embodiment of the simulation method for adaptive scanning of semiconductor devices in this invention includes: S101. Obtain scan parameters in response to simulation request; It is understood that the execution subject of this invention can be a simulation device or system for adaptive scanning of semiconductor devices, or it can be a terminal or a server; no specific limitation is made here. This embodiment of the invention will be described using a server as an example.

[0026] This invention can be specifically used in the physical simulation of semiconductor devices, enabling the virtual and systematic prediction and evaluation of semiconductor device performance on a computer before actual chip manufacturing and testing. This significantly reduces R&D costs, shortens the R&D cycle, and increases the success rate. The physical simulation described in this embodiment can be used to obtain the complete characteristic curves of the device, determine the device's operating range and limits, verify whether the design meets specifications, and analyze the sensitivity to process variations, etc. Specifically, it can be used to simulate, for example, the current-voltage characteristics of diodes, transistors, or the characteristics of other semiconductor devices under parameters such as temperature and doping concentration, and to observe device behavior.

[0027] For example, when simulating the current-voltage characteristics of a diode, it is necessary to scan the voltage value and solve for the corresponding current. If a voltage scan from 0V to 1V is required, using a fixed scan step size (e.g., 0.01V) may result in fast convergence at low voltages, but the scan step size is too small and wastes time; converging is slow at high voltages, but the scan step size is too large and may cause divergence. Using the adaptive scanning method in this embodiment, the scan step size can be adjusted according to the convergence of each voltage point; for example, in the 0V to 0.5V region, convergence is fast and the number of iterations is small, so the scan step size automatically increases to 0.02V; in the 0.5V to 1V region, convergence is slow and the number of iterations is large, so the scan step size decreases to 0.005V; thus, the overall simulation is faster and more stable.

[0028] Specifically, upon receiving a simulation request, the server responds by first acquiring the parameters required for the scan. These scanning parameters include, at a minimum, the overall simulation scan range, a preset initial scan step size, a preset optimal number of iterations per scan step, adaptive adjustment coefficients, and key physical quantities for the current simulation. These key physical quantities are related to the specific requirements of the simulation and include, but are not limited to, electrostatic potential, electron concentration, and hole concentration, used to calculate changes in physical quantities.

[0029] In a specific example, when simulating the current-voltage characteristics of a diode, the scanning range can be 0V-1V, that is, the voltage at the start of the scan is 0V and the voltage at the end of the scan is 1V; the initial scan step size can be set to 0.1V; the preset optimal number of iterations for each scan step can be set to 20; the adaptive adjustment coefficient is 0.5; and the key physical quantities are electrostatic potential, electron concentration, or hole concentration.

[0030] S102. Starting from the scan start point, construct scan values ​​with the current scan step size, and perform simulation based on the scan values; After obtaining the scan parameters, the specific scan and simulation can be started. In this embodiment, the simulation specifically involves obtaining a pre-built set of model equations and solving them based on the scan values ​​using Newton's iteration method.

[0031] First, this step starts from the initial scan starting point and constructs scan values ​​with a preset initial scan step size. The scan is then performed and simulation is conducted based on these constructed scan values. For example, if the first scan simulation starts from 0V and the scan step size is 0.1V, the constructed scan values ​​will change from the scan starting point to 0.1V.

[0032] S103. When the simulation is successfully solved, obtain the number of iterations in the current simulation process; During each scan simulation, it is determined whether the simulation is successful. If the simulation is successful, the number of iterations during the scan process is obtained, which can be used to evaluate the convergence of the current scan simulation process.

[0033] In this step, if the simulation fails, a rollback step is initiated, reverting to step S102. The scan step size is reduced according to a preset step size reduction rule, the scan values ​​are reconstructed, and the simulation is performed based on the reconstructed scan values. In one specific implementation, the preset step size reduction rule in this step can be a pre-set reduction ratio coefficient, the value of which ranges from (0,1). When rollback is required, the preset reduction ratio coefficient is obtained, and the reduction ratio coefficient is multiplied by the scan step size used when the previous simulation failed to obtain the updated scan step size.

[0034] In a specific implementation example, when the simulation fails to solve the problem using 0.1V as the scan value, rollback is enabled, the scan step size is changed to 0.05V, the updated scan value is 0.05V, and the simulation is solved again based on this updated scan value.

[0035] S104. Evaluate the convergence of this simulation process based on the number of iterations, and adjust the scan step size according to the convergence evaluation results; In this embodiment, if the simulation solution is successful, the number of iterations in the current simulation process is obtained, and the convergence of the current scanning process is evaluated based on the specific number of iterations during the scanning simulation.

[0036] In one specific implementation, at step S101, when obtaining the scan parameters in response to the simulation request, the method further includes obtaining the preset optimal number of iterations for each iteration.

[0037] In one specific implementation, when the number of simulation iterations exceeds the preset optimal number of iterations, the convergence of the current scanning step is considered poor and the physical quantity changes significantly, and the scanning step size is reduced accordingly. When the number of simulation iterations does not exceed the preset optimal number of iterations, the convergence of the current scanning step is considered good and the physical quantity changes relatively small, and the scanning step size is increased accordingly. In a preferred embodiment, the preset optimal number of iterations is 20.

[0038] Specifically, during adaptive adjustment, a step size adjustment function can be pre-constructed, and adaptive adjustment can be achieved through this function. The expression for the step size adjustment function is: ; Among them, the This indicates the adjusted scan step size, the Indicates the scan step size of the previous step. This represents the step size adjustment value. When the number of simulation iterations is greater than the preset optimal number of iterations, the convergence in the current scanning step is poor, so the step size adjustment value is set to less than 0, and the adjusted scanning step size is calculated based on the step size adjustment function; when the number of simulation iterations is less than the preset optimal number of iterations, the convergence in the current scanning step is good, so the step size adjustment value is set to greater than 0, and the adjusted scanning step size is calculated based on the step size adjustment function.

[0039] In another specific implementation, when determining convergence and evaluating whether to adjust the scan step size based on the current simulation iteration count and the optimal iteration count, the method further includes calculating an adjustment value based on a preset optimal iteration count adjustment function, a preset optimal iteration count, and the current simulation iteration count, and adaptively adjusting the scan step size according to the adjustment value. Specifically, the expression for calculating the step size adjustment value is: ; Among them, the Indicates the step size adjustment value; the The adaptive coefficient is defined as [0, 1), and can be adjusted based on the complexity of the specific simulation scheme, preferably 0.5. This represents the function for adjusting the optimal number of iterations. This represents the sum of the maximum relative changes of key physical quantities during the simulation fitting process, which monotonically increases as the gradient change of the fitted physical quantities increases. Indicates the preset optimal number of iterations; This indicates the number of the previous iteration.

[0040] The expression for the optimal iteration number adjustment function is: ; in, and It is a constant, and .

[0041] In one specific implementation, it is necessary to satisfy... To achieve better adjustment results.

[0042] Preferred, constant The value range of the constant is [1.2, 1.8]. The value range is [0.2, 0.8]; for example... =1.45, When =0.55, .

[0043] In this step, if the previous step resulted in a rollback and a reduction in the scan step size for resimulation, then when calculating and adjusting the scan step size, the scan step size from the previous step will be the value after the rollback and reduction.

[0044] Based on the expression for this step size adjustment value, it can be seen that in the region of good convergence: ,at this time: ; Therefore, the following can be achieved: That is, to make the adjusted scan step size greater than the scan step size of the previous step; In regions with poor convergence ,at this time: ; Therefore, the following can be achieved: ; That is, to make the adjusted scan step size smaller than the previous scan step size; And when hour: ; but: ; That is, keep the adjusted scan step size equal to the previous scan step size.

[0045] S105. Construct the next scan value based on the adjusted scan step size; After adjusting the scan step size, construct the next scan value based on the scan value from the previous successful simulation and the adjusted scan step size.

[0046] To illustrate with an example, if the scan value of the last successful simulation was 0.1V and the calculated adjusted scan step size was 0.08V, then the scan value of the last successful simulation and the calculated adjusted scan step size are added together to obtain the next scan value of 0.18V.

[0047] S106. Repeatedly execute the simulation solution and adjust the scan step size until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

[0048] In this embodiment, after each scan, the operations in S102-S104 described above are executed repeatedly, such as simulation solving and scanning step size adjustment, until the constructed next scan value exceeds or reaches the scan endpoint. When the scan value exceeds or reaches the scan endpoint, the scan endpoint is used as the last scan value for simulation. After successful execution, the simulation ends, completing the simulation process for this semiconductor device. Finally, simulation results, simulation curves, or simulation reports are output.

[0049] The simulation scheme provided in this embodiment of the invention can dynamically and adaptively adjust the scanning step size according to the real-time convergence and changes in physical quantities during the parameter scanning process, thereby achieving a technical effect that balances the efficiency and stability of the simulation scanning.

[0050] Specifically, based on the method in this embodiment, the simulation automatically and rapidly increases the scan step size in regions with good convergence, reducing the total number of scans required for the simulation, accelerating the simulation speed, and reducing the consumption of simulation resources. Conversely, the simulation automatically decreases the scan step size in regions with poor convergence, preventing potential divergence and reducing backoff, thus ensuring both simulation accuracy and efficiency. Furthermore, the scheme in this embodiment enhances the customizability of the scheme through preset and adjustable optimal iteration counts and adaptive coefficients, allowing for specific scan step size adjustment schemes to be set according to the specific circumstances of the scheme, thereby improving the simulation effect.

[0051] Please refer to Figure 2 The second embodiment of the simulation method for adaptive scanning of semiconductor devices in this invention includes: S201, Component and Scene Setup; It is understood that the execution subject of this invention can be a simulation device or system for adaptive scanning of semiconductor devices, or it can be a terminal or a server; no specific limitation is made here. This embodiment of the invention will be described using a server as an example.

[0052] Before performing the adaptive scanning simulation, device and scene settings need to be configured during the technical preparation phase in order to build models of the semiconductor device to be simulated and the external environment in which it exists.

[0053] In one specific implementation, constructing the geometric model of a semiconductor device includes specifying the geometry and dimensions of each region, defining the material properties of each region, and setting the doping type and doping distribution. Scene setup includes selecting an active physical model from a model library based on simulation accuracy and complexity requirements, and setting the global environment, physical effects, and boundary conditions for the simulation.

[0054] S202, Scan Settings; After completing the initial device and scene setup, scan settings are also required. This is to configure the specific parameters of the adaptive scan task, laying the foundation for subsequent dynamic adjustment of the scan step size.

[0055] Specifically, the specific parameters of the scanning task set in this step include at least the overall simulation scanning range, the preset initial scanning step size, the preset optimal number of iterations for each scanning step, the adaptive adjustment coefficient, and the key physical quantities in the current simulation. For details, please refer to the content of step S101 in the aforementioned embodiment, which will not be repeated here.

[0056] S203. Construct simulation equations; In this step, the physical problem to be simulated is transformed into a set of mathematical equations that can be solved by a computer. In one specific implementation, the simulation engine can automatically construct a set of coupled partial differential equations describing the behavior of the semiconductor device based on the semiconductor device model constructed in step S201, so as to construct the initial mathematical model in the semiconductor device model.

[0057] S204. Construct scan values ​​according to the scan step size; Next, the specific scanning and simulation steps can be executed. In this embodiment, firstly, at S204, the scan values ​​are constructed according to the initial scan start point and scan step size.

[0058] As described in step S102 of the aforementioned embodiment, starting from the initial scanning start point, a scanning value is constructed with a preset initial scanning step size, and a scan is performed and a simulation is conducted based on this scanning value.

[0059] S205, Iterative solution; After obtaining the scan values, the specific iterative solution steps are executed.

[0060] S206. Determine whether the current solution process has converged normally; Determine whether the current solution process has converged normally. If it has not converged normally, proceed to step S207 to enable rollback; if it has converged normally, proceed to step S208 to proceed to the next determination.

[0061] S207. If normal convergence is not achieved, enable backoff and adjust the scan step size. In this embodiment, if normal convergence does not occur, a rollback scheme is activated. During the rollback step, the scan step size is reduced, and the process returns to step S204 to reconstruct the scan values ​​based on the updated scan step size. The scheme in this step is essentially the same as that in S103 of the aforementioned embodiment.

[0062] S208. If convergence is normal, determine whether the scan endpoint has been reached. If convergence is normal, the rollback scheme is activated. Based on whether the scan endpoint has been reached, if not, S209 is executed and iterative simulation continues.

[0063] Furthermore, the contents of S206-S208 in this embodiment are basically similar to those of S103 in the aforementioned embodiment.

[0064] S209. If the scanning endpoint is not reached, adjust the scanning step size according to the convergence effect. In this step, the scan step size will be adjusted according to the convergence effect. Specifically, when the convergence effect is good, the scan step size will be reduced and the scan value will be reconstructed in step S204.

[0065] The specific method for adjusting the scanning step size in this embodiment is basically the same as that in step S104 of the previous embodiment, so it will not be repeated here.

[0066] S210. If the scanning endpoint has been reached, the simulation ends.

[0067] If the constructed scan value exceeds or equals the scan endpoint, it is considered that the scan endpoint has been reached. The scan endpoint is used as the last scan value to execute the simulation. After successful execution, the simulation process of this semiconductor device is completed.

[0068] The simulation scheme provided in this embodiment of the invention can dynamically and adaptively adjust the scan step size based on real-time convergence and changes in physical quantities during parameter scanning. Based on the method in this embodiment, the simulation automatically and rapidly increases the scan step size in regions with good convergence, reducing the total number of scans required for simulation, accelerating the simulation speed, and reducing the consumption of simulation resources; the simulation automatically decreases the scan step size in regions with poor convergence, preventing potential divergence and reducing backoff, thus ensuring both simulation accuracy and efficiency. Furthermore, the scheme in this embodiment enhances its customizability through preset and adjustable optimal iteration counts and adaptive coefficients, allowing for specific scan step size adjustment schemes to be set according to the specific circumstances of the scheme, achieving a technical effect that balances the efficiency and stability of simulation scanning.

[0069] The simulation method for adaptive scanning of semiconductor devices in embodiments of the present invention has been described above. The simulation system for adaptive scanning of semiconductor devices in embodiments of the present invention is described below. Please refer to [link / reference]. Figure 3 One embodiment of the simulation system for adaptive scanning of semiconductor devices in this invention includes: The parameter acquisition module 301 is used to acquire scanning parameters in response to a simulation request, wherein the scanning parameters include an initial scanning step size, a scanning start point, and a scanning end point; The scan value construction module 302 is used to construct scan values ​​starting from the scan start point and using the current scan step size; Simulation execution module 303 is used to perform simulation based on the scan values; The step size adjustment module 304 is used to obtain the number of iterations in the current simulation process when the simulation solution is successful; evaluate the convergence of the current simulation process based on the number of iterations, and adjust the scan step size according to the convergence evaluation result; The scan value construction module 302 is also used to construct the next scan value based on the adjusted scan step size; The loop execution module 305 is used to perform simulation solving and adjust the scan step size in a loop until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

[0070] The technical effects achievable by the embodiments of the present invention are as follows: the scanning step size can be adaptively adjusted according to the simulation effect, reducing the redundancy of the simulation times or avoiding the distortion of the simulation results, thus achieving a balance between simulation efficiency and stability and improving the simulation effect.

[0071] In another embodiment of this application, the simulation system for adaptive scanning of the semiconductor device further includes a rollback module. When the simulation solution fails, the rollback module is used to enable rollback and reduce the current scan step size. The scan value construction module is also used to reconstruct the scan value. The simulation execution module is also used to perform simulation solution based on the reconstructed scan value and obtain the number of iterations.

[0072] In another embodiment of this application, the step size adjustment module is further configured to construct a step size adjustment function, the expression of which is: ; Among them, the This indicates the adjusted scan step size, the Indicates the scan step size of the previous step. Indicates the step size adjustment value; The step size adjustment module is specifically used for: When the number of simulation iterations is greater than the preset optimal number of iterations, the convergence in the current scanning step is poor. The step size adjustment value is set to be less than 0, and the adjusted scanning step size is calculated based on the step size adjustment function. When the number of simulation iterations is less than the preset optimal number of iterations, the convergence of the current scanning step is good. The step size adjustment value is set to be greater than 0, and the adjusted scanning step size is calculated based on the step size adjustment function.

[0073] In another embodiment of this application, the calculation expression for the step size adjustment value is: ; Among them, the Indicates the step size adjustment value; the represents the adaptive coefficient, which ranges from [0, 1); This represents the function for adjusting the optimal number of iterations. This represents the sum of the maximum relative changes of physical quantities during the simulation fitting process, which monotonically increases as the gradient change of the fitted physical quantities increases. Indicates the preset optimal number of iterations; This indicates the number of the previous iteration.

[0074] In another embodiment of this application, the expression for the optimal iteration number adjustment function is: ; in, and It is a constant, and .

[0075] In another embodiment of this application, the constant The value range of the constant is [1.2, 1.8]. The value range is [0.2, 0.8], and .

[0076] In another embodiment of this application, the specific working details of the simulation system for adaptive scanning of the semiconductor device during operation are as described in the aforementioned simulation method for adaptive scanning of the semiconductor device, and will not be repeated here.

[0077] The technical effects achievable by the embodiments of the present invention are as follows: the scanning step size can be adaptively adjusted according to the simulation effect, reducing the redundancy of the simulation times or avoiding the distortion of the simulation results, thus achieving a balance between simulation efficiency and stability and improving the simulation effect.

[0078] Based on the same inventive concept, this specification also provides an electronic device for simulating adaptive scanning of semiconductor devices. The electronic device for simulating adaptive scanning of semiconductor devices in this embodiment of the invention will be described in detail below from the perspective of hardware processing.

[0079] Figure 4 This is a schematic diagram of an electronic device provided as an embodiment of this specification. Refer to the following... Figure 4 To describe the electronic device 400 according to this embodiment of the invention. Figure 4 The electronic device 400 shown is merely an example and should not impose any limitations on the functionality and scope of use of the embodiments of the present invention.

[0080] like Figure 4As shown, the electronic device 400 is presented in the form of a general-purpose computing device. The components of the electronic device 400 may include, but are not limited to: at least one processing unit 410, at least one storage unit 420, a bus 430 connecting different system components (including storage unit 420 and processing unit 410), a display unit 440, etc.

[0081] The storage unit stores program code that can be executed by the processing unit 410, causing the processing unit 410 to perform the steps described in the processing method section of this specification according to various exemplary embodiments of the present invention. For example, the processing unit 410 can perform, for example... Figure 1 or Figure 2 The steps are shown.

[0082] The storage unit 420 may include a readable medium in the form of a volatile storage unit, such as a random access memory unit (RAM) 4201 and / or a cache storage unit 4202, and may further include a read-only memory unit (ROM) 4203.

[0083] The storage unit 420 may also include a program / utility 4204 having a set (at least one) program module 4205, such program module 4205 including but not limited to: an operating system, one or more application programs, other program modules and program data, each or some combination of these examples may include an implementation of a network environment.

[0084] Bus 430 can represent one or more of several types of bus structures, including a memory cell bus or memory cell controller, a peripheral bus, a graphics acceleration port, a processing unit, or a local bus using any of the various bus structures.

[0085] Electronic device 400 can also communicate with one or more external devices 100 (e.g., keyboard, pointing device, Bluetooth device, etc.), and with one or more devices that enable a user to interact with electronic device 400, and / or with any device that enables electronic device 400 to communicate with one or more other computing devices (e.g., router, modem, etc.). This communication can be performed via input / output (I / O) interface 450. Furthermore, electronic device 400 can also communicate with one or more networks (e.g., local area network (LAN), wide area network (WAN), and / or public networks, such as the Internet) via network adapter 460. Network adapter 460 can communicate with other modules of electronic device 400 via bus 430. It should be understood that, although... Figure 4As not shown, other hardware and / or software modules may be used in conjunction with electronic device 400, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems.

[0086] Through the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described in this invention can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions according to the embodiments of this invention can be embodied in the form of a software product, which can be stored in a computer-readable storage medium (such as a CD-ROM, USB flash drive, external hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, or network device, etc.) to execute the method described above according to this invention. When the computer program is executed by a data processing device, it enables the computer-readable medium to implement the method described above, i.e.: as... Figure 1 or Figure 2 The method shown.

[0087] Figure 5 This is a schematic diagram of a computer-readable medium provided for embodiments of this specification.

[0088] accomplish Figure 1 or Figure 2 The computer program of the method shown can be stored on one or more computer-readable media. A computer-readable medium can be a readable signal medium or a readable storage medium. A readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of readable storage media (a non-exhaustive list) include: an electrical connection having one or more wires, a portable disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof.

[0089] The computer-readable storage medium may include data signals propagated in baseband or as part of a carrier wave, carrying readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. The readable storage medium may also be any readable medium other than a readable storage medium, capable of transmitting, propagating, or transmitting programs for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination thereof.

[0090] In addition, the present invention also provides a computer program product, including a computer program / instruction that, when executed by a processor, implements a simulation method for adaptive scanning of a semiconductor device as described in any of the above embodiments.

[0091] Program code for performing the operations of this invention can be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can execute entirely on the user's computing device, partially on the user's device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving remote computing devices, the remote computing device can be connected to the user's computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0092] In summary, the present invention can be implemented in hardware, or as software modules running on one or more processors, or a combination thereof. Those skilled in the art will understand that in practice, general-purpose data processing devices such as microprocessors or digital signal processors (DSPs) can be used to implement some or all of the functions of some or all of the components according to the embodiments of the present invention. The present invention can also be implemented as a device or apparatus program (e.g., a computer program and computer program product) for performing part or all of the methods described herein. Such programs implementing the present invention can be stored on a computer-readable medium or can be in the form of one or more signals. Such signals can be downloaded from an Internet website, provided on a carrier signal, or provided in any other form.

[0093] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the present invention is not inherently related to any specific computer, virtual device, or electronic device, and various general-purpose devices can also implement the present invention. The above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

[0094] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0095] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A simulation method for adaptive scanning of a semiconductor device, characterized in that, include: In response to a simulation request, scan parameters are obtained, wherein the scan parameters include an initial scan step size, a scan start point, and a scan end point; Starting from the scan start point, construct scan values ​​with the current scan step size, and perform simulation based on the scan values; When the simulation is successful, obtain the number of iterations in the current simulation process; Construct a step size adjustment function, the expression of which is: ； Among them, the This indicates the adjusted scan step size, the Indicates the scan step size of the previous step. Indicates the step size adjustment value; When the number of simulation iterations is greater than the preset optimal number of iterations, the convergence in the current scanning step is poor. The step size adjustment value is set to be less than 0, and the adjusted scanning step size is calculated based on the step size adjustment function. When the number of simulation iterations is less than the preset optimal number of iterations, the convergence in the current scanning step is good. The step size adjustment value is set to be greater than 0, and the adjusted scanning step size is calculated based on the step size adjustment function. The next scan value is constructed based on the adjusted scan step size; The simulation is performed repeatedly, and the scan step size is adjusted until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

2. The simulation method for adaptive scanning of semiconductor devices according to claim 1, characterized in that, After constructing scan values ​​starting from the scan start point with the current scan step size and performing simulation based on the scan values, the process further includes: If the simulation fails, a rollback is enabled, the current scan step size is reduced, the scan value is reconstructed, the simulation is performed based on the reconstructed scan value, and the number of iterations is obtained.

3. The simulation method for adaptive scanning of semiconductor devices according to claim 2, characterized in that, The process of reducing the current scan step size and reconstructing the scan values ​​includes: Obtain the pre-set reduction ratio; The scan values ​​are reconstructed by multiplying the reduction scaling factor by the scan step size used when the simulation solution fails.

4. The simulation method for adaptive scanning of semiconductor devices according to claim 1, characterized in that, The formula for calculating the step size adjustment value is: ； Among them, the Indicates the step size adjustment value; the represents the adaptive coefficient, which ranges from [0, 1); This represents the function for adjusting the optimal number of iterations. This represents the sum of the maximum relative changes of physical quantities during the simulation fitting process, which monotonically increases as the gradient change of the fitted physical quantities increases. Indicates the preset optimal number of iterations; This indicates the number of the previous iteration.

5. The simulation method for adaptive scanning of semiconductor devices according to claim 4, characterized in that, The expression for the optimal iteration number adjustment function is: ； in, and It is a constant, and .

6. The simulation method for adaptive scanning of semiconductor devices according to claim 5, characterized in that, The constant The value range of the constant is [1.2, 1.8]. The value range is [0.2, 0.8], and .

7. A simulation system for adaptive scanning of a semiconductor device, characterized in that, The simulation system for adaptive scanning of the semiconductor device includes: The parameter acquisition module is used to acquire scanning parameters in response to a simulation request, wherein the scanning parameters include the initial scanning step size, the scanning start point, and the scanning end point; The scan value construction module is used to construct scan values ​​starting from the scan start point and using the current scan step size; The simulation execution module is used to perform simulation based on the scan values; The step size adjustment module is used to obtain the number of iterations in the current simulation process when the simulation solution is successful; and to construct the step size adjustment function, the expression of which is: ； Among them, the This indicates the adjusted scan step size, the Indicates the scan step size of the previous step. Indicates the step size adjustment value; The step size adjustment module is further configured to: when the number of simulation iterations is greater than the preset optimal number of iterations, the convergence in the current scanning step is poor, so the step size adjustment value is set to be less than 0, and the adjusted scanning step size is calculated based on the step size adjustment function; when the number of simulation iterations is less than the preset optimal number of iterations, the convergence in the current scanning step is good, so the step size adjustment value is set to be greater than 0, and the adjusted scanning step size is calculated based on the step size adjustment function. The scan value construction module is also used to construct the next scan value based on the adjusted scan step size; The loop execution module is used to repeatedly perform simulation solutions and adjust the scan step size until the constructed scan value reaches the scan endpoint, thus completing the simulation of the semiconductor device.

8. A simulation device for adaptive scanning of semiconductor devices, characterized in that, The simulation device for adaptive scanning of the semiconductor device includes: a memory and at least one processor, wherein the memory stores instructions; The at least one processor invokes the instructions in the memory to cause the semiconductor device adaptive scanning simulation device to perform the steps of the semiconductor device adaptive scanning simulation method as claimed in any one of claims 1-6.

9. A computer-readable storage medium storing a computer program / instructions thereon, characterized in that, When the program / instructions are executed by the processor, they implement the steps of the simulation method for adaptive scanning of the semiconductor device as described in any one of claims 1-6.

10. A computer program product comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by the processor, the steps of the simulation method for adaptive scanning of the semiconductor device as described in any one of claims 1-6 are implemented.

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