Strip accompanying device for film coating of edge-emitting semiconductor laser

Abstract

The invention discloses an edge-emitting semiconductor laser film coating accompanying strip device which comprises a base and a vertical plate, a first gas guide cavity is formed in the base, a nitrogen storage device is arranged on the side, away from the vertical plate, of the base, a gas outlet pipe of the nitrogen storage device is communicated with the first gas guide cavity, and a plurality of accompanying strips are arranged on the upper end face of the base. A second air guide cavity is formed in the accompanying strip, the accompanying strip comprises a straight plate part and convex plate parts fixedly connected to the two ends of the straight plate part, inclined blowing holes corresponding to the active area of the edge-emitting semiconductor laser are formed in the two sides of each convex plate part, and the inclined blowing holes are communicated with the second air guide cavity; second through holes communicated with the second air guide cavities are formed in the lower end face of the straight plate part, a plurality of first through holes communicated with the first air guide cavities are formed in the base, and the second through holes are communicated with the corresponding first through holes. According to the invention, an active area of the edge-emitting semiconductor laser can be prevented from being shielded during film coating, and meanwhile, the coating film is ensured to have relatively good adhesion and mechanical strength to the surface and the side surface of a device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor lasers, and in particular to a strip device for coating edge-emitting semiconductor lasers. Background Technology

[0002] like Figure 1 As shown, the resonant cavity of the edge-emitting semiconductor laser (100) is composed of optical films on both sides. After photons are amplified by mode selection in the resonant cavity, laser light is formed in a direction parallel to the substrate. The core objective of its coating technology is to optimize the optical performance of the device cavity surface. When coating the edge-emitting semiconductor laser (100), high and low reflectance thin film materials need to be deposited on the relatively narrow device cavity surface on the side (110). The device cavity surface of the edge-emitting semiconductor laser (100) is located on the side (110), and the actual active region (120) is only distributed on the side (110) near the edge of the surface (130), and this active region (120) is almost at the junction of the side (110) and the surface (130). The cavity surface coating of the edge-emitting semiconductor laser (100) device requires good adhesion and mechanical strength to the surface (130) and side (110) of the device to ensure the functionality and reliability of the device.

[0003] In related technologies, the auxiliary strip is an auxiliary structure used to isolate adjacent edge-emitting semiconductor lasers (100) during the coating process, mainly solving the problem of physical isolation in the coating process of edge-emitting semiconductor lasers (100). During batch coating, the edge-emitting semiconductor lasers (100) need to be closely arranged, but direct contact may lead to adhesion or uneven coating. The auxiliary strip is arranged alternately with the edge-emitting semiconductor lasers (100) to form a stack, and physical isolation ensures that there is a gap between the edge-emitting semiconductor lasers (100), avoiding the accumulation of coating material between adjacent semiconductor lasers (100).

[0004] Regarding the aforementioned technologies, during the coating process of the edge-emitting semiconductor laser (100), the active area (120) is easily blocked, resulting in a low yield. Furthermore, the strips are usually arranged with the same length as the edge-emitting semiconductor laser (100). When the strips are separated from the edge-emitting semiconductor laser (100) after coating, the coating is prone to breakage on the device surface (130) and side (110), which reduces the adhesion and mechanical strength of the coating to the device surface (130) and side (110), resulting in reduced functionality and reliability of the device. Summary of the Invention

[0005] In order to avoid obstructing the active area of ​​the edge-emitting semiconductor laser during coating, and to ensure that the coating has good adhesion and mechanical strength to the surface and sides of the device, this application provides a strip device for coating edge-emitting semiconductor lasers.

[0006] This application provides a strip device for coating edge-emitting semiconductor lasers, which adopts the following technical solution: A strip device for coating an edge-emitting semiconductor laser includes a base and a vertical plate. The base has a first gas guiding cavity. A nitrogen storage device is provided on the side of the base away from the vertical plate. The outlet pipe of the nitrogen storage device is connected to the first gas guiding cavity. A plurality of strips are provided on the upper surface of the base. A second gas guiding cavity is provided in each strip. Each strip includes a straight plate portion and a convex plate portion fixedly connected to both ends of the straight plate portion. Both sides of the convex plate portion have oblique blowing holes corresponding to the active area of ​​the edge-emitting semiconductor laser. The oblique blowing holes are connected to the second gas guiding cavity. A second through hole is provided on the lower surface of the straight plate portion and is connected to the second gas guiding cavity. The base has a plurality of first through holes connected to the first gas guiding cavity. The second through holes are connected to the corresponding first through holes.

[0007] Optionally, a slider is fixedly connected to the lower end face of the straight plate, and a groove adapted to the slider is provided along the length direction of the base.

[0008] Optionally, a base plate is fixedly connected to the lower end of the upright plate, and a bidirectional cylinder is fixedly mounted on the base plate. Both output ends of the bidirectional cylinder are connected to vertical abutment plates.

[0009] Optionally, the abutment plate is provided with a slot, and both output ends of the bidirectional cylinder are fixedly connected with a slotted block.

[0010] Optionally, the upright plate is slidably connected to a pressure plate along the height direction.

[0011] Optionally, the width of the pressure plate is the same as the length of the straight plate section.

[0012] Optionally, the liner is made of pure silicon.

[0013] In summary, this application includes at least one of the following beneficial technical effects: When coating the edge-emitting semiconductor laser, there are gaps between the convex plate and the two adjacent edge-emitting semiconductor lasers. The film layer is continuously deposited on the surface and side of the edge-emitting semiconductor laser, with good adhesion. The film layer has good adhesion and mechanical strength to the surface and side of the edge-emitting semiconductor laser. Nitrogen gas is blown out through the oblique blow hole and directed towards the active region of the edge-emitting semiconductor laser, so that the film layer will not remain in the active region of the edge-emitting semiconductor laser, that is, the film layer will not block the active region of the edge-emitting semiconductor laser. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of a side-emitting semiconductor laser.

[0015] Figure 2 It is a schematic diagram of the overall structure of a spacer device for coating an edge-emitting semiconductor laser.

[0016] Figure 3 It aims to highlight the schematic diagram of the position of the edge-emitting semiconductor laser and the spacer.

[0017] Figure 4 It aims to highlight the schematic diagram of the connection between the double-acting cylinder and the abutting plate.

[0018] Figure 5 It aims to highlight the schematic diagram of the positions of the first air guide cavity and the second air guide cavity.

[0019] Figure 6 It aims to highlight the schematic diagram of the positions of the inclined blowing holes and the edge-emitting semiconductor laser.

[0020] Explanation of reference numerals: 100, edge-emitting semiconductor laser; 110, side surface; 120, active region; 130, surface; 140, film layer; 1, base; 2, vertical plate; 3, first air guide cavity; 4, nitrogen storage device; 5, spacer; 6, second air guide cavity; 7, straight plate part; 8, convex plate part; 9, inclined blowing hole; 10, second through hole; 11, first through hole; 13, sliding groove; 14, bottom plate; 15, double-acting cylinder; 16, abutting plate; 17, clamping groove; 18, clamping block; 19, pressing plate. Detailed implementation manners

[0021] The following further elaborates on this application in detail with reference to all the attached drawings.

[0022] The embodiment of this application discloses a spacer device for coating an edge-emitting semiconductor laser.

[0023] Embodiment

[0024] Refer to Figure 2 and Figure 3 A spacer device for coating an edge-emitting semiconductor laser includes a base 1 and a vertical plate 2. The vertical plate 2 is fixedly connected to the base 1. Both the vertical plate 2 and the base 1 are made of non-metallic materials to avoid affecting the subsequent coating process of the edge-emitting semiconductor laser 100. Multiple spacers 5 are placed on the upper end surface of the base 1. The length of the spacer 5 is the same as that of the edge-emitting semiconductor laser 100. The spacer 5 includes a straight plate part 7 and convex plate parts 8 fixedly connected to both ends of the straight plate part 7. The convex plate parts 8 are integrally in a "convex" shape.

[0025] Refer to Figure 2 and Figure 3When coating the edge-emitting semiconductor laser 100, the edge-emitting semiconductor laser 100 to be coated and the accompanying strips 5 are arranged crosswise on the upper end face of the base 1, that is, one edge-emitting semiconductor laser 100 is placed between each adjacent accompanying strip 5. A slider is fixedly connected to the lower end face of the straight plate 7, and the base 1 has a groove 13 along the length direction that matches the slider, and the slider slides in the groove 13. By sliding all the straight plates 7 toward the upright plate 2, all the accompanying strips 5 and the edge-emitting semiconductor laser 100 are sequentially kept in contact along the length direction of the base 1.

[0026] Reference Figure 2 and Figure 4 A base plate 14 is fixedly connected to the lower end of the upright plate 2. A bidirectional cylinder 15 is fixedly installed on the base plate 14. Both output ends of the bidirectional cylinder 15 are connected to vertical abutment plates 16. By operating the output ends of the bidirectional cylinder 15 to retract, the two abutment plates 16 are driven to move closer to each other. The two abutment plates 16 then abut against the two ends of the side-emitting semiconductor laser 100 respectively. Since the auxiliary strips 5 are the same length as the side-emitting semiconductor laser 100, all auxiliary strips 5 and the side-emitting semiconductor laser 100 are ultimately kept flush.

[0027] Reference Figure 2 and Figure 4 The abutment plate 16 has a slot 17. Both output ends of the bidirectional cylinder 15 are fixedly connected to the slot 17 and the locking block 18. After all the supporting strips 5 are flush with the edge-emitting semiconductor laser 100, the locking block 18 is separated from the slot 17 to disassemble the abutment plate 16, which facilitates the subsequent coating of both ends along the length of the edge-emitting semiconductor laser 100.

[0028] Reference Figure 2 and Figure 3 A pressure plate 19 is slidably connected to the vertical plate 2 along its height direction. The vertical plate 2 has a vertical groove, and one end of the pressure plate 19 slides up and down within the vertical groove. The pressure plate 19 then slides downwards along the height direction of the vertical groove, flattening the strip 5 and the edge-emitting semiconductor laser 100, ensuring that the strip 5 and the edge-emitting semiconductor laser 100 are on the same plane. The width of the pressure plate 19 is the same as the length of the straight plate 7, preventing coating material from being sprayed onto the pressure plate 19 during the coating process on the edge-emitting semiconductor laser 100.

[0029] Reference Figure 3 and Figure 5A first gas guiding cavity 3 is provided inside the base 1. A nitrogen storage device 4 is installed on the side of the base 1 away from the upright plate 2. The nitrogen storage device 4 can be a nitrogen cylinder. The gas outlet pipe of the nitrogen storage device 4 is connected to the first gas guiding cavity 3. A second gas guiding cavity 6 is provided inside the strip 5. A second through hole 10 connected to the second gas guiding cavity 6 is provided on the lower end face of the straight plate 7. The base 1 has multiple first through holes 11 connected to the first gas guiding cavity 3. The second through holes 10 are connected to the corresponding first through holes 11. When coating the edge-emitting semiconductor laser 100, there is a gap between the convex plate 8 and the two adjacent edge-emitting semiconductor lasers 100, so that the film layer 140 will not adhere to the convex plate 8 during coating, that is, the film layer 140 will not contact the strip 5. During the coating process, the film layer 140 is continuously and uninterruptedly formed on the surface 130 and side 110 of the edge-emitting semiconductor laser 100, and has good adhesion to the surface 130 and side 110. The film layer 140 has good adhesion and mechanical strength to the edge-emitting semiconductor laser 100.

[0030] Reference Figure 3 and Figure 5 The auxiliary strip 5 is made of pure silicon, which makes the difference in the coefficient of thermal expansion between the auxiliary strip 5 and the edge-emitting semiconductor laser 100 small, thus avoiding adverse effects on the performance of the edge-emitting semiconductor laser 100. After coating, the film layer 140 extends to a certain extent on the side 110 of the edge-emitting semiconductor laser 100. This extension connects with the film layer 140 on the surface 130, increasing the adhesion area of ​​the film layer 140 and enhancing adhesion. Moreover, this extension is a smooth transition without the appearance of traditional broken edges, effectively enhancing the mechanical strength of the film layer 140 and making it less prone to peeling off.

[0031] Reference Figure 3 and Figure 6 The nitrogen storage device 4 is activated, and the nitrogen in the nitrogen storage device 4 enters the first gas guide cavity 3 through the gas outlet pipe. The nitrogen then flows through the first through hole 11 and the second through hole 10 into the second gas guide cavity 6 of the auxiliary strip 5. Both sides of the convex plate 8 are provided with oblique blowing holes 9 corresponding to the active region 120 of the edge-emitting semiconductor laser 100. The oblique blowing holes 9 are connected to the second gas guide cavity 6. Nitrogen is blown out through the oblique blowing holes 9 and directly onto the active region 120 of the edge-emitting semiconductor laser 100. The nitrogen will not react with the coating material, and therefore, during the coating process, the film layer 140 will not remain in the active region 120 of the edge-emitting semiconductor laser 100, i.e., the film layer 140 will not block the active region 120 of the edge-emitting semiconductor laser 100.

[0032] The implementation principle of the edge-emitting semiconductor laser coating device according to an embodiment of this application is as follows: The edge-emitting semiconductor laser 100 to be coated and the supporting strips 5 are arranged crosswise on the upper end face of the base 1. All the straight plates 7 are slid towards the vertical plate 2, keeping all the supporting strips 5 and the edge-emitting semiconductor laser 100 in contact along the length direction of the base 1. By operating the output end of the bidirectional cylinder 15 to retract, the two abutment plates 16 are driven to move closer to each other. The two abutment plates 16 then abut against the two ends of the edge-emitting semiconductor laser 100 respectively. Since the supporting strips 5 and the edge-emitting semiconductor laser 100 are of the same length, all the supporting strips 5 and the edge-emitting semiconductor laser 100 are finally kept flush. The locking block 18 is separated from the locking slot 17 to disassemble the abutment plate 16. Then, the pressure plate 19 slides downward along the height direction of the vertical groove, so that the pressure plate 19 flattens the supporting strips 5 and the edge-emitting semiconductor laser 100. When coating the edge-emitting semiconductor laser 100, gaps exist between the convex plate portion 8 and each of the two adjacent edge-emitting semiconductor lasers 100, preventing the film layer 140 from adhering to the convex plate portion 8, i.e., the film layer 140 does not contact the auxiliary strip 5. During the coating process, the film layer 140 forms continuously and uninterruptedly on the surface 130 and side 110 of the edge-emitting semiconductor laser 100, exhibiting good adhesion. The film layer 140 has good adhesion and mechanical strength to the edge-emitting semiconductor laser 100. The nitrogen storage device 4 is activated, and the nitrogen in the nitrogen storage device 4 enters the first gas guiding chamber 3 through the gas outlet pipe. The nitrogen then flows through the first through hole 11 and the second through hole 10 into the second gas guiding chamber 6 of the auxiliary strip 5. Nitrogen gas is blown out through the oblique blow hole 9 and is directed towards the active region 120 of the edge-emitting semiconductor laser 100. The film layer 140 will not remain in the active region 120 of the edge-emitting semiconductor laser 100, that is, the film layer 140 will not block the active region 120 of the edge-emitting semiconductor laser 100.

[0033] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. An edge-emitting semiconductor laser coating with a device, including a pedestal (1) and a vertical plate (2), characterized in that: The base (1) is provided with a first air guiding cavity (3), the side of the base (1) away from the vertical plate (2) is provided with a nitrogen storage device (4), the outlet pipe of the nitrogen storage device (4) is communicated with the first air guiding cavity (3), the upper end surface of the base (1) is provided with a plurality of accompanying strips (5), the accompanying strips (5) are provided with a second air guiding cavity (6), the accompanying strips (5) comprise straight plate portions (7) and lug plate portions (8) fixedly connected to the two ends of the straight plate portions (7), the lug plate portions (8) are provided with inclined blowing holes (9) corresponding to the active regions (120) of the edge-emitting semiconductor lasers (100) on the two sides, the inclined blowing holes (9) are communicated with the second air guiding cavities (6); the lower end surface of the straight plate portion (7) is provided with a second through hole (10) communicated with the second air guiding cavity (6), the base (1) is provided with a plurality of first through holes (11) communicated with the first air guiding cavity (3), and the second through hole (10) is communicated with the corresponding first through hole (11).

2. The apparatus according to claim 1, wherein the apparatus is characterized by: The lower end surface of the straight plate portion (7) is fixedly connected with a sliding block, and the base (1) is provided with a sliding groove (13) matched with the sliding block along the length direction.

3. The apparatus according to claim 1, wherein the apparatus is characterized by: The lower end portion of the vertical plate (2) is fixedly connected with a bottom plate (14), the bottom plate (14) is fixedly provided with a bidirectional air cylinder (15), and the two output ends of the bidirectional air cylinder (15) are both connected with vertical abutting plates (16).

4. The apparatus according to claim 3, wherein the apparatus is characterized by: The abutting plate (16) is provided with a clamping groove (17), and the two output ends of the bidirectional air cylinder (15) are both fixedly connected with clamping blocks (18) clamped by the clamping groove (17).

5. The apparatus according to claim 1, wherein the apparatus is characterized by: The vertical plate (2) is slidingly connected with a pressing plate (19) along the height direction.

6. The apparatus according to claim 5, wherein the apparatus is characterized by: The width of the pressing plate (19) is the same as the length of the straight plate portion (7).

7. The apparatus according to claim 1, wherein the apparatus is characterized by: The accompanying strips (5) are made of pure silicon material.

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