Wide-area refresh rate display driving system based on neuromorphic device and working method thereof

Abstract

The application provides a wide-area refresh rate display driving system based on a neuromorphic device and a working method thereof, and belongs to the technical field of display, and comprises an input module, a control module and a light-emitting module; the control module comprises an enabling control module and a brightness control module which are connected with each other, the input module is connected with the enabling control module, and the light-emitting module is connected with the brightness control module; the input module splices and inputs an input enabling signal and an input data signal into the control module; the enabling control module adopts an artificial neuron device, and a single artificial neuron device is switched between on and off states according to the input enabling signal; the brightness control module adopts an artificial synapse device, and a single artificial synapse device is transformed among a plurality of different conductance states according to the input data signal; and the light-emitting module performs light-emitting display under the regulation and control of the brightness control module. The application can not only realize pixel-level control through an artificial neuron, but also realize wide-area refresh rate through an artificial synapse.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of devices and the field of display driving, and particularly relates to a wide-area refresh rate display driving system based on a neuromorphic device and a working method thereof. BACKGROUND

[0002] Vision is the most important way for humans to obtain information from the outside world. High refresh rate display effects can bring smoother experience to human-computer interaction, which is also the mainstream development direction of the current display industry. The driving circuit based on traditional row-column scanning is limited by the driving mode and cannot realize fine control of single pixels. Only the data in the whole row can be refreshed. At the same time, limited by the traditional driving mode, the upper limit of the refresh rate is affected by the charging and discharging rate of the capacitor, and the lower limit of the refresh rate is affected by the transistor leakage current. These objective factors have increasingly affected the development of the display industry.

[0003] Thanks to the switching and memory characteristics of artificial neurons, the single pixel can be enabled and controlled to realize fine control of single pixels and better display experience. At the same time, with the adjustable characteristics of multiple conductance states of artificial synapse devices, combined with their long-term and short-term memory functions, the role of traditional driving capacitors can be replaced to realize more efficient display. The current artificial synapses can achieve a response time of ns level and can be kept for a long time. According to this feature, the wide-area refresh rate technology can be realized to greatly improve the performance of the display in the refresh rate field and provide a new idea for the development of future intelligent display. SUMMARY

[0004] The purpose of the application is to propose a wide-area refresh rate display driving system based on neuromorphic devices and a working method thereof, which can realize fine control of single pixels, get rid of the dependence on capacitors to realize wide-area refresh rate, greatly expand the upper and lower limits of the refresh rate of the display, and be fully compatible with the traditional array driving. The application expands the application field of neuromorphic devices and improves the conventional display driving circuit.

[0005] To achieve the above purpose, the technical scheme of the application is as follows:

[0006] A wide-area refresh rate display driving system based on neuromorphic devices, comprising an input module, a control module and a light-emitting module; the control module comprises an enable control module and a brightness control module connected with each other, the input module is connected with the enable control module, and the light-emitting module is connected with the brightness control module.

[0007] The input module splices and inputs the input enable signal and the input data signal into the control module.

[0008] The enabling control module adopts artificial neuron devices, and a single artificial neuron device switches between on and off according to an input enabling signal;

[0009] The brightness control module adopts artificial synapse devices, and a single artificial synapse device transforms among a plurality of different conductance states according to an input data signal:

[0010] The light-emitting module performs light-emitting display under the regulation of the brightness control module.

[0011] Preferably, the artificial neuron device is a sandwich structure, including a bottom metal electrode layer, an ion-migratable insulating layer, and a top metal electrode layer arranged on a substrate from bottom to top; the bottom metal electrode layer and the top metal electrode layer adopt conductive materials, and the ion-migratable insulating layer adopts ion-migratable insulating materials.

[0012] Preferably, in the artificial neuron device, the conductive material of the bottom metal electrode layer is a highly doped silicon wafer or an inert metal material including copper or platinum; the ion-migratable insulating material is a metal oxide insulating material including tantalum oxide or zirconium oxide; and the conductive material of the top metal electrode layer is an active metal material including silver or indium oxide.

[0013] Preferably, the preparation method of the artificial neuron device specifically includes the following steps:

[0014] Step 1: growing a 100-600 nm thick highly doped silicon wafer or copper or platinum inert metal material on a substrate to obtain a bottom metal electrode layer;

[0015] Step 2: preparing an ion-migratable insulating layer by sputtering ion-migratable insulating materials on the bottom metal electrode layer;

[0016] Step 3: preparing a top metal electrode layer by a thermal evaporation process on the ion-migratable insulating layer.

[0017] Preferably, the artificial synapse device is a bottom-gate top-contact structure, including a bottom metal electrode layer, an insulating layer with an electric double layer effect, a semiconductor layer, and a top metal electrode layer arranged on a substrate from bottom to top;

[0018] The bottom metal electrode layer serves as a device gate, and the top metal electrode layer is provided with a device source and a device drain;

[0019] The bottom metal electrode layer and the top metal electrode layer adopt conductive materials, the insulating layer with the electric double layer effect adopts ion-migratable insulating materials, and the semiconductor layer adopts a high-mobility semiconductor material.

[0020] Preferably, in the artificial synapse device, the conductive material of the bottom metal electrode layer is a highly doped silicon wafer or an inert metal material, including copper or platinum; the conductive material of the top metal electrode layer is an active metal material, including gold or silver; the high-mobility semiconductor material is PDVT-10; and the ion-migratable insulating material is a metal oxide insulating material, including tantalum oxide, zirconium oxide or hafnium oxide.

[0021] Preferably, the method for preparing the artificial synapse device specifically comprises the following steps:

[0022] Step 1: growing a highly doped silicon wafer or an inert metal material on a substrate to obtain a bottom metal electrode layer;

[0023] Step 2: preparing an insulating layer with an electric double layer effect on the bottom metal electrode layer by a thin film preparation process, the thin film preparation process including sputtering or monatomic deposition;

[0024] Step 3: preparing a semiconductor layer on the insulating layer with an electric double layer effect by a thin film preparation process, the thin film preparation process including sputtering, monatomic deposition or spin coating;

[0025] Step 4: preparing a top metal electrode layer on the semiconductor layer by a thin film preparation process, the source electrode and the drain electrode are arranged through the top metal electrode layer, and the semiconductor region between the source electrode and the drain electrode is the channel, the thin film preparation process including sputtering or thermal evaporation.

[0026] Preferably, the light-emitting device of the brightness control module adopts a unidirectional conductive device; the top metal electrode layer of the artificial neuron device is connected to the input module, and the bottom metal electrode layer of the artificial neuron device is connected to the gate of the artificial synapse device; the source of the artificial synapse device is connected to the positive electrode of the circuit, and the drain of the artificial synapse device is connected to the anode of the light-emitting device; and the cathode of the light-emitting device is connected to the common ground of the circuit.

[0027] Preferably, the substrate is an insulating substrate including glass, quartz or PET.

[0028] The working method of the wide-area refresh rate display driving system based on the neuromorphic device, the method is implemented by using any of the above wide-area refresh rate display driving systems, and comprises the following stages:

[0029] The enabling stage: inputting an input signal to the enable control module, and determining whether the artificial neuron device is opened according to the input enable signal; in the case that the input enable signal is valid, the artificial neuron device is opened and kept, and enters the updating and light-emitting stage; in the case that the input enable signal is invalid, the artificial neuron device is closed, and waits for the next enable signal; the valid input enable signal is specifically that the input voltage exceeds the burst threshold voltage.

[0030] The update and light-emitting stage: the brightness control module adjusts the conductance state of the artificial synapse device according to the input data signal to control the brightness change of the light-emitting module; the input data signal is applied to the gate of the artificial synapse device, the conductance state of the artificial synapse device is changed, so that the voltage of the drain of the artificial synapse device applied to the anode of the light-emitting device is changed, and the light-emitting module emits light under the regulation of the brightness control module;

[0031] The reset stage: the input enable signal applies a reverse voltage to the enable control module, the artificial neuron device is turned off, and the reset enable control module.

[0032] Compared with the prior art, the present application has the following beneficial effects:

[0033] The present application is compatible with the scanning driving of the traditional display driving circuit, utilizes the on-off mechanism of the artificial neuron to realize the fine control of a single pixel, utilizes the multi-conductance state and memory characteristics of the artificial synapse device to realize the wide-area refresh rate, and provides a new display idea for improving the upper limit of the refresh rate of the existing display. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 It is a wide-area refresh rate display driving system based on neuromorphic devices of the present application;

[0035] Figure 2 It is a circuit schematic diagram of the wide-area refresh rate display driving system based on neuromorphic devices of the present application;

[0036] Figure 3 It is a structure schematic diagram of the artificial neuron device of the present application;

[0037] Figure 4 It is a structure schematic diagram of the artificial synapse device of the present application;

[0038] Figure 5 It is a conductance change graph of the artificial neuron device prepared in Example 1 under different control voltages;

[0039] Figure 6 It is a conductance change graph of the artificial synapse device prepared in Example 1 under different control voltages;

[0040] Figure 7 It is a driving timing diagram of the wide-area refresh rate display driving system based on neuromorphic devices prepared in Example 1.

[0041] In the figure:

[0042] 100-bottom metal electrode layer of artificial neuron device, 110-ion migratable insulating layer of artificial neuron device, 120-top metal electrode layer of artificial neuron device; 200-bottom metal electrode layer of artificial synapse device, 210-insulating layer with electric double layer effect of artificial synapse device, 220-semiconductor layer of artificial synapse device, 230-top metal electrode layer of artificial synapse device. DETAILED DESCRIPTION

[0043] The technical solutions of the present application will be described in detail below with reference to the accompanying drawings. Figures 1-7 The technical solutions of the present application will be described in detail below with reference to the accompanying drawings.

[0044] The present application provides a wide-area refresh rate display driving system based on neuromorphic devices, as shown in the figure, comprising an input module, a control module and a light-emitting module; the control module comprises an enable control module and a brightness control module connected to each other, the input module is connected to the enable control module, and the light-emitting module is connected to the brightness control module. Figure 1

[0045] The input module splices and inputs the input enable signal and the input data signal to the control module.

[0046] The enable control module adopts artificial neuron devices, and a single artificial neuron device switches between on and off states according to the input enable signal.

[0047] The brightness control module adopts artificial synapse devices, and a single artificial synapse device changes between a plurality of different conductance states according to the input data signal.

[0048] The light-emitting module emits light under the regulation of the brightness control module.

[0049] The artificial neuron device has two switch states of burst and rest, and switches to the on state when the input voltage exceeds the burst threshold voltage, and remains unchanged, and only switches to the off state after applying a reverse off voltage; one end of the artificial neuron device is connected to the input module, and the other end is connected to the brightness control module, for controlling whether the input data is transmitted backward according to the input enable signal.

[0050] The artificial synapse device has memory characteristics and can have multiple conductance adjustability under the action of different electric pulses, and the conductance change has short-range and long-range plasticity of synapses; one end of the artificial synapse device is connected to the enable control module, and the other end is connected to the light-emitting module, and under the condition that the enable signal is valid, the conductance of the artificial synapse device is changed according to the data signal, for controlling the light-emitting module to emit light.

[0051] Figure 2 ​A circuit schematic diagram of a wide-area refresh rate display driving system based on a neuromorphic device according to the present application; in the figure: ENABLE represents an input enable signal, DATA represents an input data signal, M represents a memristor type artificial neuron, ST represents an artificial synapse transistor, LED represents a light emitting diode, VDD represents a common power supply voltage, and GND represents a common ground voltage.

[0052] As shown in Figure 3 The artificial neuron device is a sandwich structure, including, from bottom to top, a bottom metal electrode layer 100 of the artificial neuron device, an ion-migratable insulating layer 110 of the artificial neuron device, and a top metal electrode layer 120 of the artificial neuron device, which are sequentially arranged above a substrate; the bottom metal electrode layer 100 and the top metal electrode layer 120 of the artificial neuron device are made of conductive materials, and the ion-migratable insulating layer 110 of the artificial neuron device is made of ion-migratable insulating materials.

[0053] The conductive material of the bottom metal electrode layer 100 of the artificial neuron device is a highly doped silicon wafer or an inert metal material, including copper or platinum; the ion-migratable insulating material is a metal oxide insulating material, including tantalum oxide or zirconium oxide; and the conductive material of the top metal electrode layer 120 of the artificial neuron device is an active metal material, including silver or indium oxide.

[0054] In an embodiment of the present application, the bottom metal electrode layer 100 of the artificial neuron device is a highly doped silicon wafer, the ion-migratable insulating layer 110 of the artificial neuron device is tantalum oxide, and the top metal electrode layer 120 of the artificial neuron device is silver.

[0055] The preparation method of the artificial neuron device specifically includes the following steps:

[0056] Step 1: growing a 100-600 nm thick highly doped silicon wafer or copper, platinum inert metal material on a substrate to obtain a bottom metal electrode layer 100 of the artificial neuron device;

[0057] Step 2: sputtering ion-migratable insulating materials on the bottom metal electrode layer 100 of the artificial neuron device to obtain an ion-migratable insulating layer 110 of the artificial neuron device;

[0058] Step 3: preparing a top metal electrode layer 120 of the artificial neuron device by a thermal evaporation process on the ion-migratable insulating layer 110 of the artificial neuron device.

[0059] As shown in Figure 4As shown, the artificial synapse device is a bottom-gate top-contact structure, comprising, from bottom to top, an artificial synapse device bottom metal electrode layer 200, an artificial synapse device insulating layer 210 with an electric double layer effect, an artificial synapse device semiconductor layer 220, and an artificial synapse device top metal electrode layer 230 arranged in sequence above the substrate;

[0060] The artificial synapse device bottom metal electrode layer 200 serves as a device gate, and the artificial synapse device top metal electrode layer 230 is provided with a device source and a device drain.

[0061] The artificial synapse device bottom metal electrode layer 200 and the artificial synapse device top metal electrode layer 230 are made of conductive materials, the artificial synapse device insulating layer 210 with an electric double layer effect is made of ion-migratable insulating materials, and the artificial synapse device semiconductor layer 220 is made of high-mobility semiconductor materials.

[0062] The conductive material of the artificial synapse device bottom metal electrode layer 200 is a highly doped silicon wafer or an inert metal material, including copper or platinum; the conductive material of the artificial synapse device top metal electrode layer 230 is an active metal material, including gold or silver; the high-mobility semiconductor material is PDVT-10; and the ion-migratable insulating material is a metal oxide insulating material, including tantalum oxide, zirconium oxide, or hafnium oxide.

[0063] In an embodiment of the present application, the artificial synapse device bottom metal electrode layer 200 is a highly doped silicon wafer, which serves as both a substrate and a gate, the artificial synapse device insulating layer 210 with an electric double layer effect is tantalum oxide, the artificial synapse device semiconductor layer 220 is PDVT-10, and the artificial synapse device top metal electrode layer 230 is silver.

[0064] The method for preparing the artificial synapse device specifically comprises the following steps:

[0065] Step 1: growing a highly doped silicon wafer or an inert metal material on a substrate to obtain an artificial synapse device bottom metal electrode layer 200;

[0066] Step 2: preparing an artificial synapse device insulating layer 210 with an electric double layer effect on the artificial synapse device bottom metal electrode layer 200 by a thin film preparation process, wherein the thin film preparation process includes sputtering or monatomic deposition;

[0067] Step 3: preparing an artificial synapse device semiconductor layer 220 on the artificial synapse device insulating layer 210 with an electric double layer effect by a thin film preparation process, wherein the thin film preparation process includes sputtering, monatomic deposition, or spin coating;

[0068] Step 4: a top metal electrode layer 230 of the artificial synapse device is prepared on the semiconductor layer 220 of the artificial synapse device by a thin film preparation process, source and drain electrodes are arranged through the top metal electrode layer 230 of the artificial synapse device, a semiconductor region between the source and drain electrodes is a channel, and the thin film preparation process includes sputtering or thermal evaporation.

[0069] The light emitting device of the brightness control module adopts a unidirectional conductive device, and the driving voltage is relatively low; the top metal electrode layer 120 of the artificial neuron device is connected to the input module, and the bottom metal electrode layer 100 of the artificial neuron device is connected to the gate of the artificial synapse device; the source of the artificial synapse device is connected to the positive electrode of the circuit, and the drain of the artificial synapse device is connected to the anode of the light emitting device; and the cathode of the light emitting device is connected to the common ground of the circuit. In an embodiment of the present application, the system regulates the selected control module by inputting a voltage pulse signal through a scan line (for transmitting an enable signal), and locks the data transmitted by a data line (for transmitting a data signal) to the corresponding control module. After a voltage is applied to the power line (connecting the positive electrode of the circuit and the artificial synapse device), the corresponding light emitting module emits light.

[0070] The substrate is an insulating substrate including glass, quartz or PET.

[0071] The present application also provides a working method of a wide-area refresh rate display driving system based on a neuromorphic device, which is implemented by using any of the above wide-area refresh rate display driving systems, and includes the following stages:

[0072] The enable stage: an input signal is input to the enable control module, and the enable control module determines whether the artificial neuron device is turned on according to the input enable signal; in the case that the input enable signal is valid, the artificial neuron device is turned on and kept, and enters the update and light emitting stage; in the case that the input enable signal is invalid, the artificial neuron device is turned off, and waits for the next enable signal; the input enable signal is valid specifically in that the input voltage exceeds the burst threshold voltage;

[0073] The update and light emitting stage: the brightness control module adjusts the conductance state of the artificial synapse device according to the input data signal to control the brightness change of the light emitting module; the input data signal is applied to the gate of the artificial synapse device to change the conductance state of the artificial synapse device, so that the drain voltage of the artificial synapse device applied to the anode of the light emitting device changes, the data is updated and stored through the conductance state, and the light emitting module emits light under the regulation of the brightness control module;

[0074] The reset stage: the input enable signal applies a reverse voltage to the enable control module, the artificial neuron device is turned off, and the enable control module is reset.

[0075] Two specific embodiments are provided below:

[0076] Embodiment 1

[0077] 1) A heavily doped P-type silicon wafer with 100 nm silicon dioxide on the surface was cleaned by acetone, isopropyl alcohol, chloroform, and distilled water (three times) and dried with nitrogen to obtain a clean silicon wafer.

[0078] 2) A 50-70 nm thick tantalum oxide insulating layer was sputtered on the silicon wafer obtained in step 1) by sputtering with argon and oxygen at a ratio of 20:5 and a sputtering pressure of 0.5 Pa.

[0079] 3) A 50 nm thick top silver electrode layer with a channel length of 30 μm and a width of 1000 μm was evaporated on the tantalum oxide insulating layer obtained in step 2) by thermal evaporation using a special mask.

[0080] 4) A 50-70 nm thick PDVT-10 semiconductor layer was spin-coated on the tantalum oxide insulating layer obtained in step 2) by spin coating.

[0081] 5) A 50 nm thick top silver electrode layer with a channel length of 30 μm and a width of 1000 μm was evaporated on the semiconductor layer obtained in step 4) by thermal evaporation using a special mask.

[0082] 6) The input module inputs an input signal to the artificial neuron, and the artificial neuron determines whether the pixel needs to change the brightness according to the enable signal.

[0083] 7) In the case where the enable signal is valid, the artificial synapse device changes its conductance according to the data signal and saves it.

[0084] 8) The enable reset signal in the input signal resets the state of the artificial neuron.

[0085] 9) The power supply voltage VDD applies a 3V voltage, and the light-emitting module LED lights up.

[0086] Figure 5 The conductance change of the artificial neuron prepared for Example 1 under different control voltages, Figure 6 The conductance change of the artificial synapse prepared for Example 1 under different control voltages, Figure 7 The driving timing relationship of the wide-area refresh rate display driving system based on the neuromorphic device prepared for Example 1.

[0087] Example 2

[0088] 1) A heavily doped P-type silicon wafer with 100 nm silicon dioxide on the surface was cleaned by acetone, isopropyl alcohol, chloroform, and distilled water (three times) and dried with nitrogen to obtain a clean silicon wafer.

[0089] 2) Using a special mask, a 50 nm thick platinum layer with a length of 500 μm and a width of 500 μm is sputtered on the silicon wafer obtained in step 1) as a bottom metal electrode layer by magnetron sputtering.

[0090] 3) A 50-70 nm thick tantalum oxide insulating layer is sputtered on the bottom metal electrode layer obtained in step 2) by sputtering under the conditions of an argon and oxygen ratio of 20:5 and a sputtering pressure of 0.5 Pa.

[0091] 4) A 50-70 nm thick PDVT-10 semiconductor layer is spin-coated on the tantalum oxide insulating layer obtained in step 3) by spin coating.

[0092] 5) A 50 nm thick top silver electrode layer with a channel length of 30 μm and a width of 1000 μm is evaporated on the semiconductor layer obtained in step 4) by thermal evaporation using a special mask.

[0093] 6) The input module inputs an input signal to an artificial neuron, and the artificial neuron determines whether the pixel needs to change the brightness according to an enable signal.

[0094] 7) In the case where the enable signal is valid, the artificial synapse device changes its conductance according to a data signal and saves it.

[0095] 8) The state of the artificial neuron is reset by an enable reset signal in the input signal.

[0096] 9) The power supply voltage VDD applies a 3 V voltage, and the light-emitting module LED is turned on.

[0097] The above embodiments are the preferred embodiments of the present application, but the embodiments of the present application are not limited by the above embodiments, and any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present application are equivalent replacement methods and are included in the protection scope of the present application.

Claims

1. A neuromorphic device based wide area refresh rate display driving system, characterized by, The system comprises an input module, a control module and a light-emitting module; the control module comprises an enabling control module and a brightness control module connected with each other, the input module is connected with the enabling control module, and the light-emitting module is connected with the brightness control module; The input module splices and inputs an input enabling signal and an input data signal into the control module; The enabling control module adopts artificial neuron devices, and a single artificial neuron device switches between on and off states according to the input enabling signal; The brightness control module adopts artificial synapse devices, and a single artificial synapse device transforms among a plurality of different conductance states according to the input data signal; The light-emitting module performs light-emitting display under the regulation of the brightness control module; The working method of the wide-area refresh rate display driving system comprises the following stages: The enabling stage: input signals are input into the enabling control module, the enabling control module determines whether the artificial neuron device is turned on according to the input enabling signal; in the case that the input enabling signal is valid, the artificial neuron device is turned on and kept, and the updating and light-emitting stage is entered; in the case that the input enabling signal is invalid, the artificial neuron device is turned off, and the next enabling signal is waited for; the valid input enabling signal is specifically that the input voltage exceeds the burst threshold voltage; The updating and light-emitting stage: the brightness control module adjusts the conductance state of the artificial synapse device according to the input data signal to control the brightness change of the light-emitting module; the input data signal is applied to the gate electrode of the artificial synapse device to change the conductance state of the artificial synapse device, so that the voltage of the drain electrode of the artificial synapse device applied to the anode of the light-emitting device changes, and the light-emitting module performs light-emitting under the regulation of the brightness control module; The reset stage: the input enabling signal applies a reverse voltage to the enabling control module, the artificial neuron device is turned off, and the enabling control module is reset.

2. The neuromorphic device-based wide-area refresh rate display driving system of claim 1, wherein, The artificial neuron device is a sandwich structure comprising, from bottom to top, a bottom metal electrode layer, an ion-migratable insulating layer and a top metal electrode layer arranged above a substrate; the bottom metal electrode layer and the top metal electrode layer adopt conductive materials, and the ion-migratable insulating layer adopts ion-migratable insulating materials.

3. The neuromorphic device-based wide-area refresh rate display driving system of claim 2, wherein, The conductive material of the bottom metal electrode layer is a highly doped silicon wafer or an inert metal material, including copper or platinum; the ion-migratable insulating material is a metal oxide insulating material, including tantalum oxide or zirconium oxide; and the conductive material of the top metal electrode layer is an active metal material, including silver or indium oxide.

4. The neuromorphic device-based wide-area refresh rate display driving system of claim 3, wherein, The preparation method of the artificial neuron device specifically comprises the following steps: Step 1: growing a 100-600 nm thick highly doped silicon wafer or copper or platinum inert metal material on a substrate to obtain a bottom metal electrode layer; Step 2: sputtering ion-migratable insulating materials on the bottom metal electrode layer to prepare an ion-migratable insulating layer; Step 3: preparing a top metal electrode layer on the ion-migratable insulating layer by a thermal evaporation process.

5. The neuromorphic device-based wide-area refresh rate display driving system of claim 2, wherein, The artificial synapse device is a bottom-gate top-contact structure comprising, from bottom to top, a bottom metal electrode layer, an insulating layer with an electric double layer effect, a semiconductor layer and a top metal electrode layer arranged above a substrate; The bottom metal electrode layer serves as a device gate, and the top metal electrode layer is provided with a device source and a device drain. The bottom metal electrode layer and the top metal electrode layer are made of conductive materials, the insulating layer with the electric double layer effect is made of ion-migratable insulating materials, and the semiconductor layer is made of high-mobility semiconductor materials.

6. The neuromorphic device-based wide-area refresh rate display driving system of claim 5, wherein, The conductive material of the bottom metal electrode layer is a highly doped silicon wafer or an inert metal material, including copper or platinum; the conductive material of the top metal electrode layer is an active metal material, including gold or silver; the high-mobility semiconductor material is PDVT-10; and the ion-migratable insulating material is a metal oxide insulating material, including tantalum oxide, zirconium oxide or hafnium oxide.

7. The neuromorphic device-based wide-area refresh rate display driving system of claim 6, wherein, The preparation method of the artificial synapse device specifically includes the following steps: Step 1: growing a highly doped silicon wafer or an inert metal material on a substrate to obtain a bottom metal electrode layer; Step 2: preparing an insulating layer with an electric double layer effect on the bottom metal electrode layer by a thin film preparation process, the thin film preparation process including sputtering or monatomic deposition; Step 3: preparing a semiconductor layer on the insulating layer with an electric double layer effect by a thin film preparation process, the thin film preparation process including sputtering, monatomic deposition or spin coating; Step 4: preparing a top metal electrode layer on the semiconductor layer by a thin film preparation process, setting a source electrode and a drain electrode through the top metal electrode layer, and the semiconductor region between the source electrode and the drain electrode being a channel, the thin film preparation process including sputtering or thermal evaporation.

8. The neuromorphic device-based wide-area refresh rate display driving system of claim 5, wherein, The light-emitting device of the brightness control module adopts a unidirectional conductive device; the top metal electrode layer of the artificial neuron device is connected to an input module, and the bottom metal electrode layer of the artificial neuron device is connected to the gate of the artificial synapse device; the source electrode of the artificial synapse device is connected to the positive electrode of a circuit, and the drain electrode of the artificial synapse device is connected to the anode of a light-emitting device; and the cathode of the light-emitting device is connected to the common ground of a circuit.

9. A neuromorphic device based wide area refresh rate display driving system according to any of claims 2-7, characterized in that, The substrate is an insulating substrate including glass, quartz or PET. The substrate is an insulating substrate including glass, quartz or PET.

Images