Display module and display panel

Abstract

The invention discloses a display module and a display panel. The display module comprises a substrate and a plurality of display units. Each display unit comprises a first color light-emitting layer and a second color light-emitting layer which are stacked and have different light-emitting colors. The display unit comprises a first display unit and a second display unit; wherein the first display unit further comprises a color conversion layer and an epitaxial layer, the color conversion layer is arranged on the sides, away from the substrate, of the first light-emitting layer and the second light-emitting layer, the epitaxial layer is arranged between the first light-emitting layer and the second light-emitting layer, the color conversion layer converts light emitted by the first light-emitting layer or the second light-emitting layer into red light, and the epitaxial layer is connected with the first light-emitting layer and the second light-emitting layer in series. Through the through hole electrodes in the substrate, the first display unit and the second display unit, electrical control of the substrate on the light-emitting layer is achieved, wiring from the side edge of the light-emitting layer is avoided, and therefore the pixel density of the display unit can be improved.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display module and a display panel. Background Technology

[0002] With the development of silicon-based MLEDs (Micro Light-Emitting Diodes), solutions using blue LEDs to excite RQDs (Red Quantum Dots) and GQDs (Green Quantum Dots) suffer from problems such as uneven color distribution in the display module, low lifespan, and low luminous efficiency, making it difficult to meet the requirements of AR (Augmented Reality) displays. Another existing technological approach, such as... Figure 1 As shown, three types of LEDs are stacked vertically, including a red light-emitting layer 11, a green light-emitting layer 12, a blue light-emitting layer 13, a bonding layer 00, and a dielectric layer 10. Due to the opaque nature of the bonding layer 00, the upper-layer devices block the light emission from the lower-layer devices, significantly reducing the light extraction efficiency. This results in a light extraction angle of 45°–90° and a light extraction efficiency of <5%. Secondly, existing technologies use edge-connected wiring to electrically connect the electrodes of each LED layer, limiting further reduction in the spacing between LEDs. With the increasing demand for high PPI (Pixels Per Inch) displays in wearable devices such as AR glasses, it is necessary to further reduce the spacing between pixels.

[0003] Therefore, it is urgent to solve the above-mentioned technical problems. Summary of the Invention

[0004] This application provides a display module and a display panel. The display module includes:

[0005] substrate;

[0006] Multiple display units disposed on the substrate, each display unit including a first display unit and a second display unit, wherein both the first display unit and the second display unit include a reflective cup, a first light-emitting layer, an epitaxial layer, and a second light-emitting layer stacked together; wherein...

[0007] The first display unit further includes a color conversion layer;

[0008] The substrate is directly connected to the first light-emitting layer and the second light-emitting layer via through-hole electrodes.

[0009] The through-hole electrode in the substrate is divided into a first part electrode and a second part electrode. The first part electrode has a dimension A in the direction perpendicular to the substrate, and the second part electrode has a dimension B in the direction perpendicular to the substrate. The ratio of dimension B to dimension A plus dimension B is 50% to 60%.

[0010] The reflective cup is located between the first light-emitting layer and the substrate, and covers the light-emitting layers of the first display unit and the second display unit.

[0011] The vias corresponding to the reflective cup and the first light-emitting layer extend along a direction perpendicular to the substrate, and the epitaxial layer is electrically connected to the substrate through the vias; wherein...

[0012] The first display unit is provided with only one of the aforementioned through-hole electrodes;

[0013] The second display unit is provided with two through-hole electrodes.

[0014] The first display unit and the second display unit are electrically connected through a common electrode on the second light-emitting layer.

[0015] An epitaxial layer is disposed between the first light-emitting layer and the second light-emitting layer.

[0016] The epitaxial layer includes a doped GaN or AlGaN / GaN heterojunction, and the bandgap of the epitaxial layer is between the first light-emitting layer and the second light-emitting layer; and...

[0017] The first emitting layer emits blue light (450nm), the second emitting layer emits green light (520nm), and the epitaxial layer emits blue-green light (480nm).

[0018] The reflective cup has a U-shaped structure, covering the projections of the first and second light-emitting layers, and is composed of 5-10 pairs of SiO / TiO Bragg reflective layers with a reflectivity ≥90%.

[0019] The light output of the first display unit accounts for 20% to 40% of the total light output of the first display unit and the second display unit.

[0020] This application relates to a display panel, which includes the display module described above.

[0021] Beneficial Effects: This application discloses a display panel and a display module. The display panel includes a substrate and multiple display units disposed on the substrate. Each display unit includes a first light-emitting layer and a second light-emitting layer stacked with different emitting colors. The first display unit further includes a red color conversion layer disposed on the side of the first and second light-emitting layers facing away from the substrate. The color conversion layer converts the light emitted by the first or second light-emitting layer into red light. This application, by configuring the first display unit to include a first light-emitting layer, a second light-emitting layer, and a color conversion layer with different emitting colors, and configuring the second display unit to include a first light-emitting layer, a second light-emitting layer, and a transparent dielectric layer, connects the first and second light-emitting layers through an epitaxial layer, and achieves electrical connection between the CMOS substrate and the first and second display units through through-hole electrodes, saves space for side-mounted traces, can accommodate more display units, and is beneficial for the design and fabrication of high-PPI display panels. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0024] Figure 1 These are side and top views of the pixel structure in related technologies;

[0025] Figure 2 This is a side view of the pixel structure of the solution in this application;

[0026] Figure 3 This is a top view of the pixels of the solution in this application;

[0027] Figures 4-9 These are flowcharts illustrating the manufacturing process of the display panel provided in the embodiments of this application;

[0028] Figure 10 This is the CIE1931 standard color gamut diagram of this embodiment.

[0029] Explanation of reference numerals in the attached figures:

[0030] 00 - Bonding layer; 10 - Dielectric layer; 11 - Red emitting layer; 12 - Green emitting layer; 13 - Blue emitting layer;

[0031] 1-1 Display unit; 21- First display unit; 22- Second display unit; 100- Substrate; 110- Through-hole electrode; 110(A)- First part of through-hole electrode; 110(B)- Second part of through-hole electrode; 120- Substrate; 201- First light-emitting layer; 202- Epitaxial layer; 203- Second light-emitting layer; 210- Reflective cup; 220- Common electrode; 230- Reflective layer; 301- Red color conversion layer; 302- Transparent protective layer. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0033] Furthermore, the terms "first," "second," and similar words do not indicate any order, quantity, or importance, but are merely used to distinguish different technical features. The terms "multiple" and similar words indicate two or more unless otherwise expressly specified.

[0034] The embodiments of this application provide a display module, with reference to the embodiments of the present invention. Figure 2 As shown, the display module includes a first display unit 21 and a second display unit 22, which are arranged in a matrix. The first display unit 21 consists of a substrate 100, a reflector 210, a first light-emitting layer 201, a second light-emitting layer 203, an epitaxial layer 202 between the first and second light-emitting layers 201 and 203, and a red color conversion layer 301, which is disposed above the second light-emitting layer 203. The blue-green light emitted by the first light-emitting layer 201, epitaxial layer 202, and second light-emitting layer 203 is absorbed by the red color conversion layer 301 and converted into red light for emission. The second display unit 22 has a similar structure to the first display unit 21, consisting of a substrate 100, a reflector 210, a first light-emitting layer 201, a second light-emitting layer 203, an epitaxial layer 202 between the first and second light-emitting layers 201 and 203, and a transparent protective layer 302. The difference lies in the fact that the second light-emitting layer 203 of the second display unit 22 is topped with a transparent protective layer 302.

[0035] In this embodiment of the invention, the red color conversion layer 301 on the first display unit 21 must use blue-green light to excite the red quantum dots in the color conversion layer. The energy state of the quantum dots is excited from the steady state to the excited state. During the process of the electron returning from the excited state to the ground state, the energy difference between the excited state and the ground state is released in the form of light energy and heat energy, so that it can emit red light.

[0036] Referring to the embodiments of the present invention Figure 3 As shown, unlike existing technologies where blue and green light sources are separated by a bonding layer 00 and a dielectric layer 10, the first light-emitting layer 201 and the second light-emitting layer 203 are electrically connected through an epitaxial layer 202. The light emission of the first display unit 21 and the second display unit 22 is controlled by a CMOS (Complementary Metal-Oxide-Semiconductor) substrate 100. Specifically, the through-hole electrode 100 penetrates the reflector cup 210 and the first light-emitting layer 201 and is directly electrically connected to the CMOS substrate 100. This avoids the drawbacks of side-overlapping wiring schemes between the first and second light-emitting layers 201 and 203, which require reserving space between each display unit 1-1. This scheme optimizes pixel layout, saves pixel gap space, and is beneficial for the fabrication of high-PPI display panels.

[0037] The via electrode 110 connects the substrate 100 to the epitaxial layer 202, the first light-emitting layer 201, and the second light-emitting layer 203. The via electrode 110 is T-shaped, and the cross-sectional area of ​​the portion connecting to the first light-emitting layer 201 is smaller than the cross-sectional area of ​​the via electrode 100 in the substrate 100. This is because a larger cross-sectional area of ​​the via electrode in the substrate 100 is beneficial for wiring and CMOS substrate 100 design, and also reduces impedance voltage division in critical circuits. The via electrode deposited in the substrate is divided into two parts: the second part 110(B) of the via electrode closer to the substrate 120 has a dimension B in the direction perpendicular to the substrate, and the first part 110(A) of the via electrode closer to the first light-emitting layer 201 has a dimension A in the direction perpendicular to the substrate. The ratio of B / (A+B) is preferably 53.3%, but can be selected from 50%, 52%, 53.3%, 54%, 56%, 58%, and 60%. The reason is that if the proportion of size B is too small, it will affect the electrical connection and the contact impedance will be too large. The reason for setting size B / (A+B) to be less than 60% is for cost control.

[0038] like Figure 3As shown, a common electrode 220 is provided between the first display unit 21 and the second display unit 22, between the second light-emitting layer 203 and the color conversion layer 301. In this embodiment, both display units are designed with a common cathode. The common electrode 220 electrically connects the second light-emitting layer 203 of the first display unit 21 and the second display unit 22. Furthermore, in the second display unit 22, the common electrode 220 is electrically connected to the epitaxial layer 202 through a through-hole electrode 110. A reflector cup 210 is disposed between the first light-emitting layer 201 and the substrate 100, covering the first light-emitting layer 201 and the second light-emitting layer 203 of the first display unit 21 and the second display unit 22. The effect of the reflector cup completely covering the first light-emitting layer 201 and the second light-emitting layer 203 can effectively improve the light emission effect of the display unit 1-1.

[0039] The epitaxial layer 202 between the first light-emitting layer 201 and the second light-emitting layer 203 is electrically connected to the substrate 100 through the through-hole electrode 110 of the first light-emitting layer 201 and the reflector cup 210. The first display unit 21 is electrically connected to the substrate 100 through a through-hole electrode 110. When the substrate 100 supplies power to the first display unit 21, it drives the first light-emitting layer 201, the epitaxial layer 202, and the second light-emitting layer 203 to emit light synchronously. Because the emission peak wavelengths of the first light-emitting layer 201, the epitaxial layer 202, and the second light-emitting layer 203 are smaller than the emission peak wavelength of red light, the red color conversion layer 301 can be excited to emit red light.

[0040] The second display unit 22 is electrically connected to the substrate 100 via two independent through-hole electrodes 100. One through-hole electrode 110 is connected to the first light-emitting layer 201, and the other through-hole electrode 110 passes through the first light-emitting layer 210 and is connected to the second light-emitting layer 203. The first light-emitting layer 201 and the second light-emitting layer 203 can be controlled to emit light independently.

[0041] In this embodiment of the invention, the light-emitting layers of the first display unit 21 and the second display unit 22 are flip-chip bonded in the same process step. Therefore, the first light-emitting layer 201 of the first display unit 21 and the first light-emitting layer 201 of the second display unit 22 are light-emitting layers from the same batch that are bonded in a single step. As a result, the wavelengths corresponding to the characteristic peaks of the emission spectrum are equal, so that the display modules will not have color differences and will be the same gray level.

[0042] The first display unit 21 and the second display unit 22 are electrically connected via a common electrode 220 on the second light-emitting layer 203. The common electrode connects the first display unit 21 and the second display unit 22, providing a unified current path. This design reduces the number of electrodes, simplifies circuit design, and ensures synchronous operation of the two display units. Although the two display units are connected via the common electrode 220, their light-emitting characteristics can be adjusted using independent driving circuits or control signals. The second light-emitting layer 203 not only serves as a light source but also as a carrier for the electrode connection. Through the common electrode 220, the second light-emitting layer 203 can provide a unified current injection for the two display units, ensuring consistency in luminous efficiency and brightness. The common electrode acts as a common cathode design for the display units 21-2, which reduces the number of electrodes and lowers manufacturing complexity and cost.

[0043] An epitaxial layer 202 is disposed between the first light-emitting layer 201 and the second light-emitting layer 203. The thickness of the epitaxial layer needs to be precisely controlled; it must be thick enough to achieve lattice buffering, but not too thick to avoid reducing carrier transport efficiency. One of the main functions of the epitaxial layer is to alleviate stress caused by lattice mismatch. If the epitaxial layer is too thin, it cannot effectively buffer lattice mismatch, which may lead to an increase in interface defects (such as dislocations), thereby reducing device performance. If the epitaxial layer is too thick, it may introduce additional stress, leading to material cracking or device failure.

[0044] In this embodiment, the thickness of the lattice buffer layer in the epitaxial layer is typically in the range of tens to hundreds of nanometers. For AlGaN / GaN systems, the buffer layer thickness is typically 50 nm to 200 nm, depending on the Al composition and the degree of lattice mismatch. Barrier layer (e.g., AlGaN / GaN / AlGaN structure): The barrier layer thickness is typically 5 nm to 20 nm, used to confine carrier diffusion. Problems with excessively thin epitaxial layers: insufficient lattice buffering effect, potentially leading to increased interface defects; poor optical isolation effect, potentially leading to optical interference. Excessively thick epitaxial layers bring the following problems: longer carrier transport paths, reducing transport efficiency; increased heat accumulation, potentially affecting device stability; increased manufacturing costs; and prolonged epitaxial growth time.

[0045] The substrate 100 of the MLED structure is electrically connected to the first light-emitting layer 201, the second light-emitting layer 203, and the dual-color epitaxial layer 202 through a via 110 and the metal layer therein, passing through a reflective cup 210. The material of the first light-emitting layer can be selected from the PN junction material nGaN+pGaN+MQWs (GaN (gallium nitride) is a wide-bandgap semiconductor material with excellent photoelectric properties, widely used in light-emitting diodes (LEDs) and laser diodes (LDs). n-type and p-type doping are achieved by doping silicon (Si) and magnesium (Mg) respectively, forming a PN junction to support the recombination of electrons and holes for light emission. MQWs (multiple quantum wells): Multiple quantum well structures are formed by alternating growth of InGaN / GaN or AlGaN / GaN layers on a GaN substrate. The role of the quantum well is to restrict the recombination of electrons and holes in the well, thereby improving the luminous efficiency. The design of MQWs (such as well width and barrier height) can adjust the emission wavelength). The material of the second light-emitting layer can be selected from nGaN+pGaN+MQWs. For QWs, the material of the dual-color epitaxial layer can be selected from the AlGaN+GaN+AlGaN system (AlGaN (AlGaN: AlGaN is a wide bandgap material whose bandgap width can be controlled by adjusting the Al composition. AlGaN / GaN / AlGaN structures are often used to form quantum wells or heterojunctions, with high electron mobility and excellent optical performance. GaN: As an intermediate layer, GaN can provide good lattice matching and carrier transport performance), and the p+GaN / n+Ga material system is the second choice (p+GaN / n+GaN: This structure is formed by highly doped p-type and n-type GaN layers. High doping can enhance carrier injection efficiency, but may increase light absorption loss. It is suitable for light-emitting devices that require high carrier concentration). Since the epitaxial layer 202 adopts a semiconductor material system, the epitaxial layer 202 can not only achieve electrical isolation between the first light-emitting layer 201 and the second light-emitting layer 203, but also emit light under the electric drive of the substrate 100. In this embodiment, by adjusting the composition of InGaN or AlGaN in the MQWs, emission from ultraviolet to visible light can be achieved. The dual-color epitaxial layer 202 can achieve dual-color emission through different emitting layer designs. In this embodiment, the bandgap of the epitaxial layer 202 is 3.0-3.2 eV, forming a carrier confinement effect, with an external quantum efficiency (EQE) ≥ 30%. The first emitting layer 201 emits blue light (450 nm), the second emitting layer 203 emits green light (520 nm), and the emission spectrum wavelength of the epitaxial layer 202 is between the two, emitting blue-green light (480 nm).

[0046] The reflector cup 210 is designed as a U-shaped groove, primarily to improve light extraction efficiency. The U-shaped design effectively collects and guides light from the first light-emitting layer 201 and the second light-emitting layer 203. This shape reflects and concentrates the light emitted by the light-emitting layers in a specific direction, thereby improving light extraction efficiency and intensity. The reflector cup 210 covers the projection areas of the first and second light-emitting layers 201 and 203, ensuring that all emitted light is collected and guided by the reflector cup. This design minimizes light scattering and loss. The DBR reflector layer 220 between the reflector cup 210 and the color conversion layer 301 is a film layer of the same material. Existing embodiments use 5 to 10 pairs of alternating SiO / TiO microstructured film layers. The Bragg reflector layer is a multilayer film structure formed by alternating stacks of high-refractive-index material (TiO) and low-refractive-index material (SiO). This structure achieves high reflectivity through interference effects, especially within a specific wavelength range. SiO (silicon oxide): has a low refractive index (approximately 1.45), serving as a low-refractive-index layer. TiO (titanium dioxide): With a high refractive index (approximately 2.4), it serves as a high refractive index layer. The thickness of each SiO / TiO layer pair is designed to be one-quarter wavelength (λ / 4) to achieve optimal interference reflection. Increasing the number of layers can improve reflectivity. This microstructure can be configured as micro / nano rods or prismatic films, improving total internal reflection and light emission from the reflector cup through the Bragg reflection principle. Furthermore, the projected area of ​​the color conversion layer 301 is close to that of the second light-emitting layer, ensuring sufficient conversion and utilization of the blue light emitted by the first light-emitting layer and the green light emitted by the second light-emitting layer. In this embodiment, the light extraction rate reaches over 30%, while in existing vertically stacked pixel structures, the light extraction rate is less than 5% due to the bonding metal blocking the lower LED.

[0047] To maximize the light emission effect of the display module, the reflector cup 210 and the color conversion layer 210 work together, with their frontal projection covering the blue-green light source to maximize the light emission effect. The first light-emitting layer 201 and the substrate...

[0048] The orthographic projection of the reflector cup 210 on the substrate 100 between 100 can completely cover the orthographic projections of the first light-emitting layer 201 and the second light-emitting layer 203 on the substrate 100, and the orthographic projection of the color conversion layer 301 on the substrate 100 covers the orthographic projection of the reflector cup 210 on the substrate 100.

[0049] In this embodiment, the reflector cup adopts an inverted trapezoidal structure, making the light-emitting area larger than the light-receiving area. In the optimal embodiment, the angle between the sidewall of the reflector cup and the plane of the light-emitting layer is 120°. Optional settings include: 90°, 95°, 100°, 105°, 110°, 115°, 120°, 125°, 130°, 135°, 140°, and 145°. The size of the angle between the sidewall of the reflector cup and the light-emitting surface depends on the aspect ratio of the longitudinal section of the inverted trapezoidal color conversion layer.

[0050] The light-emitting area between the first display unit 21 and the second display unit 22 is fixed. The light intensity can be adjusted by controlling the magnitude of the luminous current through the CMOS substrate. The difference in light intensity is entirely controlled by the magnitude of the luminous current, not by the area difference. By controlling the luminous current through the CMOS substrate, the light intensity of the first and second display units can be precisely adjusted. The light emission of the first display unit 21 accounts for 30% of the total light emission, which is an optimized setting suitable for achieving visual balance. Optional settings include: red light to white light ratios of 20%, 25%, 30%, 35%, and 40%. When the red light:blue-green light ratio is 3:7, the overall picture quality and appearance of the display panel are optimal. This ratio design achieves natural color transitions and visual comfort while improving display effects. Red light is typically used in display panels to enhance warm tones and color saturation. Too low a red light ratio may result in a cool image, while too high a ratio may result in a warm image or distortion. A red light ratio of 30% to white light achieves good color balance and visual comfort. Blue-green light is mainly used to provide cool tones and high brightness. A higher proportion of blue-green light (e.g., 70%) ensures the overall brightness of the display panel while avoiding excessively warm tones. In this embodiment, the color gamut range of this test item is larger than the standard DCI-P3-Coverage color gamut range.

[0051] like Figure 10 As shown, referring to the CIE1931 standard, this embodiment achieves a DCI-P3 coverage of 100% (DCI-P3 is a wide color gamut standard proposed by the Motion Picture Industry Association (DCI), widely used in digital cinema, television, and display devices. Its color gamut coverage is larger than sRGB, capable of presenting richer and more vibrant colors, especially in the red and green regions. The DCI-P3 color gamut range is close to the colors perceptible to the human eye, suitable for high dynamic range (HDR) content display, and commonly used in modern displays, mobile phone screens, and film production). To demonstrate the high color gamut characteristics of this module, color images must be used; therefore, instructions for using color images are provided here.

[0052] like Figures 4-9 As shown, the manufacturing process of a display panel provided by an embodiment of this application will be described next.

[0053] like Figure 4 As shown, the second light-emitting layer 203, the epitaxial layer 202, and the first light-emitting layer 201 are deposited on a temporary substrate by flip-chip bonding, and then the DBR reflective layer is bonded to the LED wafer.

[0054] Secondly, such as Figure 5 As shown, the reflector cup 210 and part of the first light-emitting layer 201 are removed by laser lift-off or wet chemical etching to prepare for the subsequent deposition of the via electrode 110.

[0055] like Figure 6 As shown, some vias in the substrate 100 are removed using laser lift-off or wet chemical etching. The substrate is then flip-chip mounted over the flip-chip reflector 210 and its first light-emitting layer 201, epitaxial layer 202, and second light-emitting layer 203, and metal is deposited in the vias to form metal leads. A via is etched above the second light-emitting layer 203 of the second display unit 22. This via is trapezoidal in shape to facilitate subsequent metal layer deposition. The via electrode 110 is preferably made of copper, and the process for forming the via electrode 110 can be physical vapor deposition (PVD), which includes methods such as vacuum evaporation, sputtering, and ion plating.

[0056] like Figure 7 As shown, Figure 6 The process module shown is flipped and then the common electrode layer 220 is bonded. The common electrode layer can be reused as a common cathode design or as a planarization layer to prepare for the subsequent deposition of the color conversion layer.

[0057] like Figure 8 As shown, a bank structure is provided on the common electrode layer 220, and a corresponding reflective cup shape is etched above the first display unit 21 and the second display unit 22.

[0058] like Figure 9 As shown, a color conversion layer 301 is formed above some display units, thereby forming a first display unit 21. The remaining display units 22 without a color conversion layer 301 are the second display units 22. In this embodiment, the color conversion layer 301 can be a phosphor or a quantum dot material, etc., and the quantum dot material is one of CdSe (cadmium selenide), perovskite, InP (indium phosphide), etc. Optionally, the full width at half maximum (FWHM) of the red light emitted from the color conversion layer 213 is 30 nanometers to 50 nanometers.

[0059] This application also provides a display terminal, which includes the display panel described above.

[0060] In this embodiment, the display terminal can be a micro-display, such as an AR / VR device or any product or component with display functionality.

[0061] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0062] The specific embodiments of this application have been described in detail above. The embodiments disclosed above are merely preferred embodiments of this application. Those skilled in the art can make many modifications and improvements without departing from the concept of this application. All such modifications and improvements fall within the scope of protection defined by the claims of this application.

Claims

1. A display module, characterized by The display module comprises: a substrate; a plurality of display units arranged on the substrate, the display units comprising a first display unit and a second display unit, each of the first display unit and the second display unit comprising a reflective cup, a first light-emitting layer, an epitaxial layer, and a second light-emitting layer arranged in layers; the first display unit further comprising a color conversion layer; the substrate is directly connected to the first light-emitting layer and the second light-emitting layer through a through-hole electrode.

2. The display module of claim 1, wherein: the through-hole electrode in the substrate is divided into a first part electrode and a second part electrode, the size of the first part electrode in the direction perpendicular to the substrate is size A, and the size of the second part electrode in the direction perpendicular to the substrate is size B, the ratio of size B to size A plus size B is 50% to 60%.

3. The display module of claim 1, wherein: the reflective cup is located between the first light-emitting layer and the substrate, and covers the first light-emitting layer and the second light-emitting layer of the first display unit and the second display unit.

4. The display module of claim 3, wherein: the through-hole corresponding to the reflective cup and the first light-emitting layer penetrates in the direction perpendicular to the substrate, and the epitaxial layer is electrically connected to the substrate through the through-hole electrode; wherein the first display unit is provided with only one through-hole electrode; the second display unit is provided with two through-hole electrodes.

5. The display module of claim 1, wherein: the first display unit and the second display unit are electrically connected through a common electrode on the second light-emitting layer.

6. The display module of claim 1, wherein: an epitaxial layer is arranged between the first light-emitting layer and the second light-emitting layer.

7. The display module of claim 6, wherein: the epitaxial layer comprises doped GaN or AlGaN / GaN heterojunction, the band gap of the epitaxial layer is between the first light-emitting layer and the second light-emitting layer; and the first light-emitting layer emits blue light (450 nm), the second light-emitting layer emits green light (520 nm), and the epitaxial layer emits blue-green light (480 nm).

8. The display module of claim 3, wherein: the reflective cup is a U-shaped structure, covers the projection of the first light-emitting layer and the second light-emitting layer, and is composed of 5-10 pairs of SiO / TiO Bragg reflection layers, with a reflectivity of ≥90%.

9. The display module of claim 1, wherein: the light output of the first display unit accounts for 20% to 40% of the total light output of the first display unit and the second display unit.

10. A display panel, characterized by, The display module comprises any one of claims 1 to 9.

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