A method and device for configuring a memory retry threshold

Abstract

This application discloses a method and device for configuring a memory retry threshold, relating to the field of data processing technology. The method acquires and compares historical and current memory configuration information, and performs corresponding initial configuration operations based on the comparison results. This allows for flexible determination of the initial retry threshold based on the actual memory configuration, avoiding mismatches caused by memory insertion / removal or replacement. After the operating system starts, the method adjusts the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries obtained when a system management interrupt is triggered. This satisfies the requirements of different systems for memory uncorrectable error correction retries, improving overall system stability.

Description

Technical Field

[0001] This application relates to the field of data processing technology, and in particular to a method and device for configuring a memory retry threshold. Background Technology

[0002] In modern server architectures, the reliability of the memory subsystem directly determines the overall stability of the system. Uncorrectable errors (UCEs) occurring in Dynamic Random Access Memory (DRAM) are a core factor leading to server crashes and service interruptions. To mitigate the impact of UCEs, the industry employs uncorrectable error correction and retry mechanisms. These mechanisms attempt to transform transient or intermittent UCEs into correctable errors by retransmitting data signals or switching memory access paths, thus preventing direct system crashes.

[0003] However, the memory retry threshold configuration schemes of related technologies rely on a fixed initial threshold during the boot phase. When the server experiences memory insertion, removal, or replacement, the fixed initial threshold may not match the hardware characteristics of the new memory, resulting in poor retry performance or performance penalties. In addition, when a UCE occurs and triggers a System Management Interrupt (SMI), in order to avoid system crashes, uncorrectable error correction retry is kept enabled and a fixed retry threshold is set. This cannot adapt to the memory uncorrectable error correction retry requirements of different systems, affecting the overall stability of the system. Summary of the Invention

[0004] This application provides a method and apparatus for configuring a memory retry threshold, which at least solves the problem that the memory retry threshold configuration methods in the related art cannot adapt to the requirements of memory uncorrectable error correction retry in different systems, thus affecting the overall stability of the system.

[0005] Firstly, this application provides a method for configuring a memory retry threshold, including:

[0006] During the boot process, historical memory configuration information and current memory configuration information are obtained. The historical memory configuration information includes the historical memory slot configuration method and historical memory serial number from the last boot, while the current memory configuration information includes the current memory slot configuration method and current memory serial number from the current boot.

[0007] The historical memory slot configuration method is compared with the current memory slot configuration method, as well as the historical memory serial number and the current memory serial number. Based on the comparison results, the corresponding initial configuration operation is performed.

[0008] After the operating system starts, in response to determining that a system management interrupt has been triggered, the number of retries for uncorrectable errors is obtained;

[0009] Adjust the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries.

[0010] Secondly, this application also provides a configuration device for a memory retry threshold, comprising:

[0011] The acquisition module is used to acquire historical memory configuration information and current memory configuration information during the boot process. The historical memory configuration information includes the historical memory slot configuration method and historical memory serial number from the last boot, and the current memory configuration information includes the current memory slot configuration method and current memory serial number from the current boot.

[0012] The comparison module is used to compare the historical memory slot configuration method with the current memory slot configuration method, as well as the historical memory serial number with the current memory serial number, and to perform the corresponding initial configuration operation based on the comparison results;

[0013] The acquisition module is also used to acquire the number of retries for uncorrectable errors in response to a system management interrupt being triggered after the operating system starts.

[0014] The adjustment module is also used to adjust the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries.

[0015] Thirdly, this application also provides an electronic device, including:

[0016] Memory, used to store computer programs;

[0017] A processor is used to implement the steps of the method as described in the first aspect when executing a computer program.

[0018] Fourthly, this application also provides a computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the steps of the method as described in the first aspect.

[0019] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the method described in the first aspect.

[0020] This application provides a method and device for configuring a memory retry threshold. The method acquires and compares historical and current memory configuration information, and performs corresponding initial configuration operations based on the comparison results. This allows for flexible determination of the initial retry threshold based on the actual memory configuration, avoiding mismatches caused by memory insertion / removal or replacement. After the operating system starts, the method adjusts the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries obtained when a system management interrupt is triggered. This satisfies the requirements of different systems for memory uncorrectable error correction retries and improves the overall system stability. Attached Figure Description

[0021] To more clearly illustrate the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 An application scenario diagram corresponding to a memory retry threshold configuration method provided in an embodiment of this application;

[0023] Figure 2 A flowchart illustrating a method for configuring a memory retry threshold according to an embodiment of this application;

[0024] Figure 3 A flowchart illustrating a method for configuring a memory retry threshold, as provided in another embodiment of this application;

[0025] Figure 4 A schematic diagram of a configuration device for a memory retry threshold provided in an embodiment of this application;

[0026] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of this application.

[0028] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0029] In modern server architectures, the reliability of the memory subsystem directly determines the overall stability of the system. Uncorrectable errors (UCEs) occurring in Dynamic Random Access Memory (DRAM) are a core factor leading to server crashes and service interruptions. To mitigate the impact of UCEs, the industry employs uncorrectable error correction and retry mechanisms. These mechanisms attempt to transform transient or intermittent UCEs into correctable errors by retransmitting data signals or switching memory access paths, thus preventing direct system crashes.

[0030] However, the memory retry threshold configuration schemes of related technologies rely on a fixed initial threshold during the boot phase. When the server experiences memory insertion, removal, or replacement, the fixed initial threshold may not match the hardware characteristics of the new memory, resulting in poor retry performance or performance penalties. In addition, when a UCE occurs and triggers a System Management Interrupt (SMI), in order to avoid system crashes, uncorrectable error correction retry is kept enabled and a fixed retry threshold is set. This cannot adapt to the memory uncorrectable error correction retry requirements of different systems, affecting the overall stability of the system.

[0031] Therefore, to avoid technical problems in related technologies, during the boot phase, the initial threshold can be adapted by comparing historical and current memory configuration information; during the operating system operation phase, the retry strategy is dynamically adjusted according to the actual number of UCE retries. Through the layered dynamic adjustment mechanism, the configuration mismatch problem during memory changes can be solved, and the retry threshold can be optimized on demand in SMI scenarios, thereby improving the reliability of the memory subsystem and the overall stability of the system.

[0032] Figure 1 An application scenario diagram corresponding to a memory retry threshold configuration method provided in an embodiment of this application is shown, such as... Figure 1 As shown, the application scenario in this embodiment includes: BIOS 10 (Basic Input / Output System), non-volatile memory 11, and central processing unit 12.

[0033] Specifically, during the system boot phase, BIOS 10 retrieves historical memory configuration information from non-volatile memory 11 and reads the current boot memory configuration information from the motherboard. The historical memory configuration information includes the memory slot configuration method and memory serial number from the last boot, while the current boot memory configuration information includes the memory slot configuration method and memory serial number. BIOS 10 then compares the current boot memory configuration information with the historical memory configuration information and performs the corresponding initial configuration operation based on the comparison result. After the operating system starts, when the system triggers an SMI interrupt, BIOS 10 reads the number of uncorrectable error retries from the registers of the central processing unit 12. Then, based on the number of uncorrectable error retries, the BIOS adjusts the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory.

[0034] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0035] Figure 2 A flowchart illustrating a method for configuring a memory retry threshold according to an embodiment of this application is shown below. Figure 2 As shown, the execution subject of this embodiment is a memory retry threshold configuration device. This device can be implemented by a computer program, or by a medium storing the relevant computer program, such as a USB flash drive and / or optical disc; or it can be implemented by a physical device integrating or installing the relevant computer program, such as a chip or electronic device. The electronic device may be a computer or a server, etc. The memory retry threshold configuration method provided in this embodiment includes the following steps:

[0036] Optionally, in this embodiment, the BIOS is taken as the execution subject.

[0037] S201. During the boot process, obtain historical memory configuration information and current memory configuration information; wherein, the historical memory configuration information includes the historical memory slot configuration method and historical memory serial number of the last boot, and the current memory configuration information includes the current memory slot configuration method and current memory serial number of the current boot.

[0038] Optionally, the BIOS reads historical configuration data from the non-volatile memory of the hard drive from the last boot, including historical memory slot configuration and historical memory serial number.

[0039] The historical memory slot configuration method records the physical deployment information of the memory modules at the last boot, such as "slot 0 - channel 0 - memory module present, slot 1 - channel 1 - memory module present", which can be determined through the slot detection register data of the memory controller.

[0040] Among them, the historical memory serial number is a unique identifier for each memory module recorded at the last boot time, which is obtained by reading the memory storage unit.

[0041] Optionally, the BIOS reads the memory configuration data at the current boot time through the memory controller and the memory storage unit, including the current memory slot configuration and the current memory serial number.

[0042] The current memory slot configuration method records the physical deployment information of the memory modules at the time of this boot, and the current memory serial number records the unique identifier of each memory module at the time of this boot.

[0043] Optionally, the BIOS stores the current memory slot configuration and current memory serial number in non-volatile memory for direct reading upon the next boot.

[0044] S202. Compare the historical memory slot configuration method with the current memory slot configuration method, and the historical memory serial number with the current memory serial number, and perform the corresponding initial configuration operation based on the comparison results.

[0045] Optionally, the judgment rule can be that if the historical memory slot configuration is completely consistent with the current memory slot configuration and the historical memory serial number corresponds one-to-one with the current memory serial number, then it is determined that no memory reconfiguration has occurred; otherwise, it is determined that a memory reconfiguration has occurred.

[0046] Optionally, if no memory reconfiguration has occurred, the retry count threshold stored in the non-volatile memory before the last shutdown can be directly used as the current initial retry count threshold without reconfiguration.

[0047] Alternatively, if a memory reconfiguration occurs, the initial retry threshold can be determined as follows:

[0048] First, by reading the hardware characteristic parameters (such as manufacturer, model, and rated error rate) from the storage chip of the current memory module, and matching these parameters with a preset initial threshold mapping table, the initial threshold of the current memory is determined. Optionally, this initial threshold mapping table can be pre-stored in the BIOS or BMC, containing initial threshold ranges for different memory specifications, such as 6-10 errors for low-error-rate memory and 12-18 errors for high-error-rate memory.

[0049] Secondly, the initial retry threshold can be determined using a dynamic initial threshold algorithm. Specifically, the initial threshold is calculated using the number of memory channels and the capacity of a single module as inputs, thus balancing versatility and adaptability. Optionally, an example formula is: Initial threshold = base value 8 + number of channels × 1 + (single module capacity / 8GB) × 1, with an upper limit of 20 times.

[0050] It should be noted that the serial number of the memory module is the unique identifier of the memory, and the slot configuration reflects the physical deployment logic. The combination of the two can accurately determine whether the memory module has been reconfigured. If it has not been reconfigured, the historical threshold is used to avoid repeated adaptation.

[0051] S203. After the operating system starts, in response to determining that a system management interrupt has been triggered, obtain the number of retries for uncorrectable errors.

[0052] It should be noted that the BIOS boots the OS system to complete the startup. During OS operation, when a memory uncorrectable error (UCE) occurs, the system will retry to try to eliminate the effects of the UCE due to the enabled uncorrectable memory error retry function. If the number of retries exceeds the uncorrectable error correction retry threshold and the UCE still cannot be recovered, the retry count is recorded in the CPU register, and the system triggers an SMI interrupt. If the number of retries does not reach the uncorrectable error correction retry threshold, the UCE has already recovered, and the retries will stop. The retry count is recorded in the CPU register, and the system also triggers an SMI interrupt.

[0053] Optionally, when the memory controller detects a UCE, it triggers a System Management Interrupt (SMI) to suspend the current business process and perform a retry operation.

[0054] Optionally, after determining that a system management interrupt has been triggered, the BIOS can accurately obtain the actual number of retries corresponding to this error by reading the retry count in the CPU register.

[0055] Optionally, the number of retries can be associated with the corresponding memory module identifier (such as slot number, memory serial number) and the error occurrence timestamp and stored in the BMC log or operating system kernel buffer to provide data support for adjusting the threshold for the number of retries to correct uncorrectable errors.

[0056] S204. Adjust the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries.

[0057] Optionally, based on the collected number of retries and the current uncorrectable error correction retry threshold, the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory can be dynamically adjusted according to the following strategy:

[0058] Optionally, if the current UCE is successfully corrected after N retries, it is transformed into a correctable error, and N is greater than or equal to 80% of the current threshold for the number of retries to correct uncorrectable errors, which is close to the current upper limit of the threshold. This indicates that the current threshold for the number of retries to correct uncorrectable errors can only barely cover the error, and the threshold for the number of retries to correct uncorrectable errors can be increased to improve reliability.

[0059] Optionally, if the number of retries N for UCE M consecutive times (M≥5 times) is less than or equal to 50% of the current threshold for the number of retries for uncorrectable error correction, it indicates that the current threshold for the number of retries for uncorrectable error correction is too high, resulting in performance waste, and the threshold for the number of retries for uncorrectable error correction may need to be lowered.

[0060] Optionally, if the number of retry counts N for the target memory's UCE for K consecutive times (K≥3 times) is the same as the current threshold for retry counts of uncorrectable error correction, but the error is still not corrected, i.e. the UCE persists, it indicates that the error is a permanent error and the retry mechanism is ineffective. The uncorrectable error correction retry function of the memory module can be turned off, and the server's fault isolation mechanism can be triggered, such as disabling the memory and prompting an alarm to replace it.

[0061] This application provides a method for configuring a memory retry threshold. By acquiring and comparing historical and current memory configuration information, and performing corresponding initial configuration operations based on the comparison results, the initial retry threshold can be flexibly determined according to the actual memory configuration, avoiding mismatches caused by memory insertion, removal, or replacement. After the operating system starts, based on the number of uncorrectable error retries obtained when a system management interrupt is triggered, the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory is adjusted accordingly. This satisfies the requirements of different systems for memory uncorrectable error correction retries and improves the overall system stability.

[0062] As an optional implementation, based on any of the above embodiments, the corresponding initial configuration operation is performed according to the comparison results, including the following steps:

[0063] Specifically, when the historical memory slot configuration method and the current memory slot configuration method, as well as the historical memory serial number and the current memory serial number are consistent, the current uncorrectable error correction retry function status and the uncorrectable error correction retry number threshold remain unchanged.

[0064] Optionally, a uniform retry threshold preset value can be stored in the BIOS or BMC in advance. This preset value is set based on the average error characteristics of industry-standard memory. For example, the default value is set to 16 times, which can be manually modified through the server operation and maintenance interface, with the range limited to 6-18 times.

[0065] It should be noted that the default state of the uncorrectable error correction retry function is "enabled" and will remain enabled unless it is manually disabled before the last shutdown.

[0066] Optionally, when the historical memory slot configuration is completely consistent with the current memory slot configuration and the historical memory serial number corresponds to the current memory serial number, the threshold for retrying uncorrectable errors before the last shutdown is kept unchanged without resetting, and the retry function status before the last shutdown is kept unchanged. If the retry function was disabled before the last shutdown due to specific needs (such as troubleshooting memory module failures), the disabled state will be maintained during this power-on; if it was enabled last time, it will be enabled again this time.

[0067] This setting avoids retry threshold resets in consistent configuration scenarios, reducing performance adaptation costs caused by retry threshold fluctuations, and is especially suitable for servers that have been running stably for a long time and do not require memory reconfiguration.

[0068] Specifically, if any of the following is inconsistent: the historical memory slot configuration method is different from the current memory slot configuration method, or the historical memory serial number is different from the current memory serial number, the threshold for the number of retry attempts to correct uncorrectable errors is set to a preset value, and the current memory slot configuration method and the current memory serial number are stored.

[0069] Optionally, when the historical memory slot configuration differs from the current memory slot configuration (e.g., adding a memory slot, changing the memory slot location), or when the historical memory serial number does not match the current memory serial number (e.g., replacing a single memory module), the retry threshold for the target memory is set to a preset value, such as 16 times.

[0070] Optionally, the current memory slot configuration, current memory serial number, and the preset values ​​set this time can be stored as new historical data for comparison during the next boot.

[0071] It should be noted that this method is suitable for scenarios with high memory reconfiguration frequency and sensitive maintenance costs. It does not require maintenance personnel to preset hardware feature mapping tables, and the initial configuration can be completed quickly through unified preset values.

[0072] This application provides a method for configuring a memory retry threshold. When the memory configuration remains unchanged, it maintains the existing correctable error correction retry function status and the uncorrectable error correction retry threshold, avoiding unnecessary adjustments that could affect system stability. If the memory configuration changes, it sets the uncorrectable error correction retry threshold to a preset value and stores the new configuration information. This allows for rapid adaptation to new memory, preventing retry issues due to mismatched uncorrectable error correction retry thresholds, and provides a basis for subsequent configuration comparisons, ensuring the reliable operation of the system's memory subsystem. As an optional implementation, based on any of the above embodiments, storing the current memory slot configuration and the current memory serial number includes the following steps:

[0073] First, store the current memory slot configuration, current memory serial number, and current boot timestamp into the target storage.

[0074] Optionally, the current memory slot configuration can be stored in a binary bit mapping format. For example, 8 memory slots correspond to 8 binary numbers (bit0-bit7). "1" indicates that the corresponding slot has a memory module, and "0" indicates that there is no memory module. For example, "11000000" means that slots 0 and 1 have memory, and the other slots are empty.

[0075] Optionally, the current memory serial number can be stored in ASCII string format, with each memory module's serial number associated with its corresponding slot number. The format can be "slot number: serial number;".

[0076] Optionally, the current boot timestamp can be stored in Unix timestamp (second level) or ISO 8601 standard format to record the precise time when the configuration data was generated, so as to trace the sequence of configuration changes.

[0077] Optionally, a three-segment storage structure consisting of a header identifier, a data area, and a checksum area can be adopted. The header identifier is fixed as "MEM_CONFIG_V1" (8 bytes) and is used to identify the configuration data type to avoid confusion with other stored data. Optionally, the current memory slot configuration method is obtained from the memory controller, the current memory serial number is read from each memory storage chip, and the current power-on timestamp is obtained from the server's real-time clock module. The three types of data are then assembled into the data area in the order of slot configuration method, memory serial number, and timestamp.

[0078] Optionally, a designated partition of the server's built-in non-volatile flash memory can be selected as the target storage. This partition is independent of the firmware area to avoid configuration data loss during firmware upgrades. Optionally, an atomic operation of erasing before writing can be used to avoid data corruption caused by partial writing. The old data in the target storage partition is erased first, and then the header identifier and data area are completely written to ensure the atomicity of the data write.

[0079] Secondly, a storage check code is generated after storage is completed; the storage check code is used to verify the storage integrity of the current memory slot configuration and the current memory serial number.

[0080] Optionally, a Cyclic Redundancy Check (CRC32) algorithm or a message digest algorithm (such as MD5) can be used to generate the stored checksum. A fixed-length stored checksum is generated using the complete bytes of the header identifier and data area as input. The checksum is stored in a checksum area immediately following the data area, for example, "Header Identifier (8 bytes), Data Area (30 bytes), Checksum (4 bytes)", to facilitate simultaneous retrieval of data and stored checksum during subsequent readings.

[0081] Optionally, when retrieving historical memory configuration information upon the next boot, the integrity of the stored data must be verified first to avoid using corrupted configuration data. Specific steps include data reading and checksum verification.

[0082] Optionally, the complete data of "header identifier, data area, and checksum area" is read from the target memory. First, the header identifier is checked to see if it is "MEM_CONFIG_V1". If it does not match, it is determined to be an invalid configuration. If the header identifier matches, the data area and the stored checksum C1 are separated. Using the same algorithm as when storing, the read header identifier and data area are used as input to recalculate the checksum C2.

[0083] Optionally, if C1=C2, the configuration data is determined to be complete and valid, and the slot configuration, serial number and timestamp in the data area are parsed normally; if C1≠C2, the data is determined to be corrupted.

[0084] This application provides a method for configuring a memory retry threshold. By storing the current memory slot configuration, the current memory serial number, and the current boot timestamp together in the target memory, it fully records the key information and time points of the memory configuration, providing rich evidence for subsequent traceability and comparative analysis. After storage, a storage check code is generated, which can effectively verify the integrity of the stored content, prevent data from being damaged or lost during storage, ensure that the recorded memory configuration information is accurate and reliable, and thus ensure that the entire memory retry threshold configuration method runs based on correct data, improving the stability and reliability of the system's memory subsystem.

[0085] As an optional implementation, based on any of the above embodiments, in response to determining that a system management interrupt has been triggered, the number of retries for uncorrectable errors is obtained, including the following steps:

[0086] First, in response to a system management interrupt, the Basic Input / Output System Firmware Interrupt Service Handler is invoked; the Basic Input / Output System Firmware Interrupt Service Handler is used to read the number of retries for uncorrectable errors stored in the register.

[0087] The BIOS firmware interrupt service routine is a dedicated interrupt handling function pre-compiled in the BIOS firmware. It has access to the memory controller registers and is used to parse the SMI trigger cause and read the retry count.

[0088] The register in question records the number of UCE retries; the register address and format vary depending on the processor architecture. Optionally, this register can be a CPU register.

[0089] Optionally, the faulty memory slot identifier reported by the memory controller when SMI is triggered can be mapped to the slot number and serial number association table to bind the number of retries to the faulty memory serial number.

[0090] Optionally, the BIOS interrupt service routine reads a specified bit field of the register through memory-mapped I / O to obtain the number of retries for this UCE, and temporarily stores the read value in the BIOS memory buffer.

[0091] Finally, the number of retries for uncorrectable errors read is associated with the memory sequence number at the time the system management interrupt is triggered and recorded.

[0092] Optionally, the BIOS interrupt service routine reads the fault address and slot register of the memory controller, which stores the slot number corresponding to the faulty memory. Then, the BIOS interrupt service routine calls the slot serial number association table preset in the BIOS and queries the corresponding memory serial number based on the obtained slot number. The BIOS interrupt service routine assembles the retry count, fault serial number, and SMI trigger timestamp into structured data and writes the structured data into the BMC log buffer for operation and maintenance query.

[0093] This application provides a method for configuring a memory retry threshold. It reads the number of retries for uncorrectable errors by calling the Basic Input / Output System firmware interrupt service routine in response to a system management interrupt. This utilizes the mature and stable interrupt handling mechanism of the BIOS firmware, enabling reliable and accurate data acquisition. The method associates the read number of retries with the memory serial number triggered by the system management interrupt, establishing a correspondence between the number of retries and the specific memory location. This facilitates precise location of the problematic memory and provides a basis for analyzing the causes of uncorrectable memory errors and adjusting retry strategies accordingly, thereby effectively improving the system's ability to handle memory errors and its overall stability.

[0094] Figure 3 A flowchart illustrating a method for configuring a memory retry threshold, as provided in another embodiment of this application, is shown below. Figure 3As shown in the illustration, as an optional implementation, based on any of the above embodiments, adjusting the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory according to the number of uncorrectable error retries includes the following steps:

[0095] S301. Based on the number of retries when uncorrectable errors occurred multiple times in the target memory history, obtain the target average number of retries.

[0096] Here, target memory refers to the memory module whose retry function status needs to be evaluated. The target average is the arithmetic mean of the number of valid retries of the target memory over the last T times (T≥3).

[0097] S302. Obtain a reference average number of retries based on the number of times uncorrectable errors occurred in the history of other memory.

[0098] Here, "other memory" refers to memory modules belonging to the same server as the target memory. The reference average is the average of the most recent P (P≥3) valid retries for each of the other memory modules.

[0099] S303. If the ratio of the target average value to the reference average value is greater than the first preset ratio, disable the uncorrectable error correction retry function of the target memory.

[0100] The first preset ratio is a preset quantization threshold used to determine whether the target memory is abnormal, with a value range of 1.5-2.0. Optionally, based on industry test data: the fluctuation of the number of retry times for normal memory is ≤50%, and a ratio exceeding 1.5 indicates that the error characteristics of the target memory deviate significantly from the normal level, and the retry mechanism is ineffective. The default value is set to 1.5.

[0101] Optionally, the complete data of "header identifier, data area and check code area" is read from the BMC non-volatile log. After verification by the check code, the serial numbers of the target memory and other memory are parsed, and then the UCE retry count record associated with the serial numbers of the target memory and other memory is extracted.

[0102] Optionally, if the ratio of the target average value to the reference average value is less than or equal to the first preset ratio, it indicates that the number of retries in the target memory is within the normal fluctuation range, and its retry function status and the current threshold are maintained unchanged, and the statistical results are stored in the BMC log.

[0103] Optionally, if the ratio of the target average value to the reference average value is greater than the first preset ratio, it indicates that the target memory may have potential hardware defects (such as DRAM chip aging), and the retry mechanism can no longer effectively convert UCE. Therefore, the uncorrectable error correction retry function of the target memory is turned off.

[0104] Optionally, after disabling the uncorrectable error correction retry function of the target memory, the red fault light of the target memory slot can be lit to send an alarm message to the operation and maintenance platform. The alarm message includes the memory serial number and the shutdown timestamp.

[0105] This application provides a method for configuring a memory retry threshold. By calculating the target average and a reference average based on the number of retries when uncorrectable errors occur in the target memory and other memory in history, and performing a ratio analysis, the error retry situation of the target memory can be more comprehensively evaluated. When the ratio of the target average to the reference average is greater than a first preset ratio, the uncorrectable error correction retry function of the target memory is disabled. Therefore, by identifying target memory with abnormally frequent error retries, its uncorrectable error correction retry function can be stopped in a timely manner, avoiding ineffective retries that consume system resources, preventing system stability degradation due to persistent errors in this memory, and effectively improving the reliability and operating efficiency of the entire system's memory subsystem.

[0106] like Figure 3 As shown in the figure, as an optional implementation, based on any of the above embodiments, the following steps are also included:

[0107] S304. If the ratio of the target average value to the reference average value is less than or equal to the first preset ratio, update the threshold for the number of uncorrectable error correction retry times in the target memory to the target average value.

[0108] Specifically, if the ratio of the target average to the reference average is less than or equal to a first preset ratio, the UCE retry threshold for the target memory is updated from the current value to the target average. Optionally, if the target average is not an integer, it is rounded up to ensure that the number of retries required for the actual error is covered.

[0109] S305. Adjust the operating voltage and memory refresh rate of the target memory; wherein, the operating voltage is adjusted in preset step values, and the memory refresh rate is adjusted in preset percentages.

[0110] The preset voltage step value is the minimum unit for adjusting the operating voltage of the target memory, with a range of ±0.02V to ±0.05V, and a default setting of ±0.02V. Optionally, a safe voltage range can be preset according to the memory model, such as 1.1V-1.35V for DDR4 memory and 1.05V-1.25V for DDR5 memory, to prevent excessively high voltage from burning out the memory or excessively low voltage from causing a decrease in stability.

[0111] The preset refresh rate adjustment percentage is a pre-set percentage used to fine-tune the memory refresh rate, with a value range of ±3% to ±8%, and a default setting of ±5%.

[0112] Optionally, the BMC accesses the voltage monitoring register of the memory VRM (Voltage Regulator Module) via the I2C bus to obtain the current operating voltage of the target memory.

[0113] Optionally, the BIOS reads the refresh cycle register from the memory controller to calculate the current refresh rate.

[0114] This application provides a method for configuring a memory retry threshold. When the ratio of the target average value to the reference average value is less than or equal to a first preset ratio, the threshold for the number of uncorrectable error correction retry attempts for the target memory is updated to the target average value. This makes the setting of the uncorrectable error correction retry attempt threshold more closely reflect the actual error retry situation of the target memory, improving the effectiveness of the retry mechanism. Furthermore, adjusting the operating voltage and memory refresh rate of the target memory, with preset step values ​​and preset percentages, helps improve the memory operating environment, reduces the probability of uncorrectable errors recurring, enhances the stability of the memory subsystem, and ensures the overall reliable operation of the server system.

[0115] As an optional implementation, based on any of the above embodiments, the following steps are also included:

[0116] First, after updating the threshold for the number of retries to correct uncorrectable errors in the target memory to the target average value, a threshold update flag is set, and the update time, the threshold before the update, the threshold after the update, and the corresponding target average value are recorded.

[0117] The threshold update flag is used to identify the update status of the threshold and can be represented by binary bits. Optionally, key information about the threshold update can be stored in a threshold update record table, which records the update time, the threshold before the update, the threshold after the update, and the corresponding target average value.

[0118] Optionally, after updating the threshold for the number of retry attempts to correct uncorrectable errors in the target memory to the target average value, a flag setting command is sent to the BMC. Upon receiving the command, the BMC writes the threshold update flag to the configuration data area corresponding to the target memory, overwriting the original flag. Then, the data (including update time, threshold before update, threshold after update, and corresponding target average value) is assembled according to the threshold update record table format and stored in the threshold history partition of the BMC non-volatile log, allowing maintenance personnel to view it via command line.

[0119] Secondly, based on the number of retries that caused uncorrectable errors within the target memory in the past preset time period, a new target average value is determined.

[0120] Optionally, the mean recalculation process can be triggered via a scheduled task in the BMC within a preset time period. Alternatively, it can also be manually triggered by operations and maintenance personnel through the BMC web interface.

[0121] The preset time period is the time interval used to periodically recalculate the target average value. The value range can be 7 days to 30 days, and the default is 14 days.

[0122] Optionally, the number of UCE retries in the target memory over the past preset time period can be extracted from the BMC log.

[0123] Subsequently, if the ratio of the updated target average to the current uncorrectable error correction retry threshold is greater than a second preset ratio, the current uncorrectable error correction retry threshold is replaced with the updated target average, and the threshold update flag is updated. If the ratio of the updated target average to the current uncorrectable error correction retry threshold is less than or equal to the second preset ratio, the current uncorrectable error correction retry threshold remains unchanged.

[0124] The second preset ratio is a pre-set quantitative standard for determining whether to perform threshold adjustment, with a value range of 1.1-1.3 and a default value of 1.2.

[0125] This application provides a method for configuring a memory retry threshold. By setting a threshold update flag and recording the update time, the threshold before and after the update, and the corresponding target average value, it provides complete and detailed data support for subsequent system maintenance and problem tracing, facilitating maintenance personnel's understanding of the threshold adjustment history and memory operation status. A new target average value is determined based on the number of retries for uncorrectable errors that occurred in the target memory within a preset time period, which can promptly reflect changes in recent memory error retry situations, making the threshold adjustment basis more closely aligned with the current actual state of the memory. By comparing a second preset ratio with the ratio of the updated target average value to the current uncorrectable error correction retry threshold, it determines whether to replace the current uncorrectable error correction retry threshold, ensuring that the uncorrectable error correction retry threshold always adapts well to memory error retry situations, improving the rationality of the memory retry threshold configuration and system stability.

[0126] As an optional implementation, based on any of the above embodiments, the following steps are also included:

[0127] First, after disabling the uncorrectable error correction retry function of the target memory, the memory serial number of the target memory, the time when the retry function was disabled, the target average value before the retry function was disabled, and the reference average value are stored together.

[0128] Optionally, the memory sequence number of the target memory, the time when the retry function was turned off, the target average value before the retry function was turned off, and the reference average value can be recorded in the retry function shutdown record table.

[0129] Optionally, after the BIOS completes the target memory retry function shutdown, the target memory serial number, retry function shutdown time, target average value and reference average value before the retry function shutdown are extracted according to the format of the retry function shutdown record table and assembled into a data area; the CRC32 check code is calculated for the header identifier and the data area, and the complete header identifier, data area and check code are stored in the function shutdown partition of the BMC non-volatile log.

[0130] Secondly, the target memory is checked for uncorrectable errors according to a preset detection cycle.

[0131] The preset detection period is a pre-set time interval for periodically detecting memory error status after the function is turned off. The value range is 3 days to 14 days, and the default is 7 days.

[0132] Optionally, the BMC can use a timed task to check whether uncorrectable errors still exist according to a preset detection cycle. Optionally, the BMC accesses the UCE status register of the memory controller corresponding to the target memory via the I2C bus, reads the register value and clears the historical error flag; if the register value is 0 (no uncleared UCE), it is determined that there are no uncorrectable errors; if it is non-zero (UCE exists), it is initially determined that there are uncorrectable errors.

[0133] Subsequently, if no uncorrectable errors are found in the target memory after multiple consecutive checks, the uncorrectable error correction retry function for the target memory is enabled, and the threshold for the number of uncorrectable error correction retryes for the target memory is set to a preset value. If an uncorrectable error is detected in the target memory, the uncorrectable error correction retry function for the target memory is kept disabled, and the retry function's disable time is updated.

[0134] The threshold for multiple consecutive detections is used to determine the indicator that the memory error state has returned to normal, that is, no UCE is found in multiple consecutive detections. The value range can be 2 to 5 times, and the default is set to 3 times.

[0135] Optionally, if it is determined that there are still uncorrectable errors, the retry function shutdown time in the retry function shutdown record table is updated to the current detection time.

[0136] This application provides a method for configuring a memory retry threshold. By detecting uncorrectable errors in the target memory at a preset detection cycle, it can promptly detect changes in memory status, preventing system instability caused by prolonged undetected memory problems and providing a reliable basis for subsequent functional state adjustments. Furthermore, when no errors are detected after multiple consecutive checks, the retry function is enabled and a preset value is set, restoring its error correction capability while ensuring memory stability. When an error is detected, the function remains disabled and the shutdown time is updated, effectively preventing erroneous memory from causing system problems again, thus improving the system's flexibility in handling memory errors and overall stability.

[0137] As an optional implementation, based on any of the above embodiments, adjusting the operating voltage and memory refresh rate of the target memory includes the following steps:

[0138] If the target average value is less than the threshold for the number of uncorrectable error correction retries before the target memory update, the operating voltage will be reduced by a preset step value, and the memory refresh rate will be reduced by a preset percentage.

[0139] If the target average value is greater than or equal to the threshold for the number of uncorrectable error correction retries before the target memory update, the operating voltage will be increased by a preset step value, and the memory refresh rate will be increased by a preset percentage.

[0140] Among them, the threshold for retrying uncorrectable errors before the update refers to the historical retry threshold before the current threshold update in the target memory, which can be read from the threshold update record table.

[0141] Optionally, if the target average value is less than the threshold for the number of retries to correct uncorrectable errors before the update, it means that the number of retries required for the actual error in the target memory is lower than the historical threshold, the error rate decreases, and hardware parameters can be reduced to optimize power consumption and performance.

[0142] Optionally, if the target average value is greater than or equal to the threshold for the number of retries to correct uncorrectable errors before the update, it indicates that the number of retries required for the actual error in the target memory is not less than the historical threshold, and the error rate has not decreased or increased. In this case, hardware parameters can be increased to enhance stability.

[0143] Optionally, the threshold for the number of uncorrectable error correction retries before the target memory update and the current target average value are extracted from the threshold update record table. Optionally, the current hardware parameters of the target memory are read through the BMC, and further, the current voltage value is obtained by accessing the voltage monitoring register of the memory VRM, and the current memory refresh frequency is obtained by accessing the refresh frequency configuration register of the memory controller.

[0144] Optionally, the BMC sends a voltage adjustment command to the VRM, and the VRM updates the output voltage value and sends a confirmation message back to the BMC. The BMC sends a frequency adjustment command to the BIOS, and after the BIOS verifies the checksum, it updates the refresh frequency configuration register of the memory controller to complete the frequency configuration.

[0145] This application provides a method for configuring a memory retry threshold. By using preset step values ​​and preset percentages to adjust the operating voltage and memory refresh rate, the adjustment process becomes flexible and controllable. It can perform fine optimization based on the actual state and needs of the memory, and better adapt to the characteristics and operating environment of different memory types.

[0146] Figure 4 This is a schematic diagram of a configuration device for a memory retry threshold provided in an embodiment of this application, as shown below. Figure 4 As shown, the memory retry threshold configuration device provided in this embodiment is located in an electronic device. The memory retry threshold configuration device 40 provided in this embodiment includes: an acquisition module 41, a comparison module 42, and an adjustment module 43.

[0147] The memory retry threshold configuration device provided in this embodiment can execute... Figure 2 The implementation principles and technical effects of the methods shown are similar, and will not be repeated here.

[0148] Specifically, the acquisition module 41 is used to acquire historical memory configuration information and current memory configuration information during the boot phase; wherein, the historical memory configuration information includes the historical memory slot configuration method and historical memory serial number of the last boot, and the current memory configuration information includes the current memory slot configuration method and current memory serial number of the current boot; the comparison module 42 is used to compare the historical memory slot configuration method with the current memory slot configuration method, and the historical memory serial number with the current memory serial number, and perform the corresponding initial configuration operation according to the comparison result; the acquisition module 41 is also used to acquire the number of uncorrectable error retries in response to the determination of triggering a system management interrupt after the operating system starts; the adjustment module 43 is also used to adjust the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory according to the number of uncorrectable error retries.

[0149] Optionally, when performing the corresponding initial configuration operation based on the comparison result, the comparison module 42 is specifically used to: keep the current uncorrectable error correction retry function state and the uncorrectable error correction retry number threshold unchanged when the historical memory slot configuration method and the current memory slot configuration method, as well as the historical memory serial number and the current memory serial number, are consistent; and when the historical memory slot configuration method and the current memory slot configuration method, or the historical memory serial number and the current memory serial number are inconsistent, set the uncorrectable error correction retry number threshold to a preset value and store the current memory slot configuration method and the current memory serial number.

[0150] Optionally, when comparing module 42 stores the current memory slot configuration method and the current memory serial number, it is specifically used to: store the current memory slot configuration method, the current memory serial number, and the current boot timestamp into the target memory; generate a storage verification code after storage is completed; and use the storage verification code to verify the storage integrity of the current memory slot configuration method and the current memory serial number.

[0151] Optionally, the acquisition module 41, in response to determining that a system management interrupt has been triggered and acquiring the number of uncorrectable error retries, is specifically used to: in response to a system management interrupt, call the basic input / output system firmware interrupt service routine; wherein the basic input / output system firmware interrupt service routine is used to read the number of uncorrectable error retries stored in the register; and associate the read number of uncorrectable error retries with the memory sequence number when the system management interrupt is triggered.

[0152] Optionally, when adjusting the uncorrectable error correction retry function status or the uncorrectable error correction retry threshold of the target memory based on the number of uncorrectable error retries, the adjustment module 43 is specifically used to: obtain a target average number of retries based on the number of retries when uncorrectable errors occur multiple times in the history of the target memory; obtain a reference average number based on the number of retries when uncorrectable errors occur multiple times in the history of other memory; and disable the uncorrectable error correction retry function of the target memory when the ratio of the target average to the reference average is greater than a first preset ratio.

[0153] Optionally, the adjustment module 43 is further configured to: update the threshold for the number of uncorrectable error correction retryes of the target memory to the target average value when the ratio of the target average value to the reference average value is less than or equal to a first preset ratio; adjust the operating voltage and memory refresh frequency of the target memory; wherein the operating voltage is adjusted in preset step values ​​and the memory refresh frequency is adjusted in preset percentages.

[0154] Optionally, the adjustment module 43 is further configured to: after updating the threshold for the number of uncorrectable error correction retry attempts in the target memory to the target average value, set a threshold update flag and record the update time, the threshold before update, the threshold after update, and the corresponding target average value; redetermine a new target average value based on the number of retries for uncorrectable errors that occurred in the target memory within a preset time period; if the ratio of the updated target average value to the current threshold for the number of uncorrectable error correction retry attempts is greater than a second preset ratio, replace the current threshold for the number of uncorrectable error correction retry attempts with the updated target average value and update the threshold update flag; if the ratio of the updated target average value to the current threshold for the number of uncorrectable error correction retry attempts is less than or equal to the second preset ratio, keep the current threshold for the number of uncorrectable error correction retry attempts unchanged.

[0155] Optionally, the adjustment module 43 is further configured to: after disabling the uncorrectable error correction retry function of the target memory, associate and store the memory serial number of the target memory, the retry function shutdown time, the target average value before the retry function is disabled, and the reference average value; detect whether there are still uncorrectable errors in the target memory according to a preset detection cycle; if no uncorrectable errors are found in the target memory after multiple consecutive detections, enable the uncorrectable error correction retry function of the target memory and set the threshold for the number of uncorrectable error correction retry times of the target memory to a preset value; if uncorrectable errors are detected in the target memory, keep the uncorrectable error correction retry function of the target memory in a disabled state and update the retry function shutdown time.

[0156] Optionally, when adjusting the operating voltage and memory refresh rate of the target memory, the adjustment module 43 is specifically used to: if the target average value is less than the threshold for the number of uncorrectable error correction retries before the target memory update, then reduce the operating voltage by a preset step value and reduce the memory refresh rate by a preset percentage; if the target average value is greater than or equal to the threshold for the number of uncorrectable error correction retries before the target memory update, then increase the operating voltage by a preset step value and increase the memory refresh rate by a preset percentage.

[0157] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application, as shown below. Figure 5 As shown, the electronic device 50 provided in the embodiments of this application includes: a memory 51 and a processor 52.

[0158] The memory 51 stores a computer program, and the processor 52 is configured to run the computer program to perform the steps in any of the above-described embodiments of the memory retry threshold configuration method.

[0159] Embodiments of this application also provide a computer-readable storage medium storing a computer program, wherein the computer program is configured to execute the steps in any of the above-described memory retry threshold configuration method embodiments when running.

[0160] In one exemplary embodiment, the aforementioned computer-readable storage medium may include, but is not limited to, various media capable of storing computer programs, such as a USB flash drive, read-only memory (ROM), random access memory (RAM), portable hard disk, magnetic disk, or optical disk.

[0161] Embodiments of this application also provide a computer program product, which includes a computer program that, when executed by a processor, implements the steps in any of the above-described memory retry threshold configuration method embodiments.

[0162] Embodiments of this application also provide another computer program product, including a non-volatile computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps in any of the above-described memory retry threshold configuration method embodiments.

[0163] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0164] The solution provided in this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only intended to help understand the method and core ideas of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of this application.

Claims

1. A method for configuring a memory retry threshold, the method comprising: The application relates to a method for adjusting an uncorrectable error correction retry function state of a target memory. In a booting stage, historical memory configuration information and current memory configuration information are acquired; wherein the historical memory configuration information comprises a historical memory slot configuration mode and a historical memory serial number of last booting, and the current memory configuration information comprises a current memory slot configuration mode and a current memory serial number of current booting; The historical memory slot configuration mode and the current memory slot configuration mode, and the historical memory serial number and the current memory serial number are compared, and corresponding initial configuration operations are executed according to comparison results; The corresponding initial configuration operations executed according to the comparison results comprise: In the case that the historical memory slot configuration mode and the current memory slot configuration mode, and the historical memory serial number and the current memory serial number are all consistent, the current uncorrectable error correction retry function state and the uncorrectable error correction retry number threshold value are kept unchanged; In the case that any one of the historical memory slot configuration mode and the current memory slot configuration mode, or the historical memory serial number and the current memory serial number is inconsistent, the uncorrectable error correction retry number threshold value is set to a preset value, and the current memory slot configuration mode and the current memory serial number are stored; After the operating system is started, the uncorrectable error retry number is acquired in response to determination that a system management interrupt is triggered; According to the uncorrectable error retry number, the uncorrectable error correction retry function state or the uncorrectable error correction retry number threshold value of the target memory is adjusted.

2. The method of claim 1, wherein, The current memory slot configuration mode and the current memory serial number are stored, which comprises: The current memory slot configuration mode, the current memory serial number and a current booting time stamp are stored into a target memory; After storage is completed, a storage check code is generated; the storage check code is used for verifying storage integrity of the current memory slot configuration mode and the current memory serial number.

3. The method of claim 1, wherein, In response to determination that a system management interrupt is triggered, the uncorrectable error retry number is acquired, which comprises: In response to the system management interrupt, a basic input output system firmware interrupt service processing program is called; wherein the basic input output system firmware interrupt service processing program is used for reading the uncorrectable error retry number stored in a register; The read uncorrectable error retry number is associated with a memory serial number at the time when the system management interrupt is triggered and is recorded.

4. The method according to any one of claims 1 to 3, characterized in that, According to the uncorrectable error retry number, the uncorrectable error correction retry function state or the uncorrectable error correction retry number threshold value of the target memory is adjusted, which comprises: A target average value of multiple retry numbers is obtained according to retry numbers of the target memory when uncorrectable errors occur multiple times historically; A reference average value is obtained according to retry numbers of other memories when uncorrectable errors occur multiple times historically; In the case that a ratio of the target average value to the reference average value is greater than a first preset ratio value, the uncorrectable error correction retry function of the target memory is closed.

5. The method of claim 4, wherein, The application further relates to a computer device. In a case where the ratio of the target average value to the reference average value is less than or equal to the first preset ratio, the uncorrectable error correction retry threshold of the target memory is updated to the target average value; The working voltage and the memory refresh frequency of the target memory are adjusted; wherein the working voltage is adjusted by a preset step value, and the memory refresh frequency is adjusted by a preset percentage.

6. The method of claim 5, wherein, Further comprising: After the uncorrectable error correction retry threshold of the target memory is updated to the target average value, a threshold update flag is set, and the update time, the threshold before the update, the threshold after the update, and the corresponding target average value are recorded; A new target average value is re-determined based on the number of retries of uncorrectable errors of the target memory in a past preset time period; In a case where the ratio of the updated target average value to the current uncorrectable error correction retry threshold is greater than a second preset ratio, the current uncorrectable error correction retry threshold is replaced by the updated target average value, and the threshold update flag is updated; In a case where the ratio of the updated target average value to the current uncorrectable error correction retry threshold is less than or equal to the second preset ratio, the current uncorrectable error correction retry threshold remains unchanged.

7. The method of claim 4, wherein, Further comprising: After the uncorrectable error correction retry function of the target memory is closed, the memory serial number of the target memory, the retry function closing time, the target average value before the retry function is closed, and the reference average value are stored in association; According to a preset detection period, it is detected whether there is still uncorrectable error in the target memory; In a case where uncorrectable error is not found in the target memory in a plurality of continuous detections, the uncorrectable error correction retry function of the target memory is started, and the uncorrectable error correction retry threshold of the target memory is set to a preset value; In a case where uncorrectable error is detected in the target memory, the uncorrectable error correction retry function of the target memory is kept in a closed state, and the retry function closing time is updated.

8. The method of claim 5, wherein, The adjustment of the working voltage and the memory refresh frequency of the target memory comprises: If the target average value is less than the uncorrectable error correction retry threshold of the target memory before the update, the working voltage is lowered by the preset step value, and the memory refresh frequency is lowered by the preset percentage; If the target average value is greater than or equal to the uncorrectable error correction retry threshold of the target memory before the update, the working voltage is raised by the preset step value, and the memory refresh frequency is raised by the preset percentage.

9. An electronic device, comprising: Comprise: A memory for storing a computer program; A processor for executing the computer program to implement the method of any one of claims 1-8.

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