High-thermal-conductivity low-dielectric epoxy resin-based electronic packaging material and preparation method thereof

Abstract

The invention relates to the technical field of electronic packaging, and discloses a high-thermal-conductivity low-dielectric epoxy resin-based electronic packaging material and a preparation method thereof, and the high-thermal-conductivity low-dielectric epoxy resin-based electronic packaging material is prepared from the following components in parts by weight: 62-70 parts of alicyclic epoxy resin; 8-10 parts of aromatic epoxy resin; 4-6 parts of a reactive low dielectric diluent; 20-26 parts of an anhydride curing agent; 0.2 to 0.3 part of a latent catalyst A; 0.2 to 0.5 part of a latent catalyst B; 2.5 to 5.0 parts of a diyne crystal monomer; 0.01 to 0.04 part of a photo-thermal synergist; 0.08 to 0.18 part of an optical inhibitor; and 0.8 to 1.2 parts of a reactive anti-dissolution synergist. The alicyclic epoxy resin and the aromatic epoxy resin jointly form the matrix, the reactive low-dielectric diluent and the matrix are in the same network in the curing process, the matrix and the diluent are located in the same cross-linked network, and compatibility and uniform dispersion in the formula are maintained, so that the effect of wide compatibility is achieved.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of electronic packaging, in particular to a high-thermal-conductivity and low-dielectric epoxy resin-based electronic packaging material and a preparation method thereof. BACKGROUND

[0002] With the rapid development of integrated circuits towards high integration, high frequency and high power density, electronic packaging materials, as the key connection and protection carrier of chips and external circuits, directly determine the operation stability and service life of devices. Epoxy resin-based materials are a material system taking epoxy resin as the core matrix and forming a three-dimensional network structure through cross-linking reaction with a curing agent. After curing, the material has excellent mechanical strength, electrical insulation, chemical stability and process formability, and the raw materials are widely available and controllable in cost. It is one of the most widely used basic functional materials in the field of electronic materials. Epoxy resin-based materials play the role of chip protection, component fixation and signal transmission guarantee. With the rapid development of integrated circuits towards high integration, high frequency and high power density, the heat generation per unit area of the chip is significantly increased. If the thermal conductivity of the packaging material is insufficient, the heat will accumulate inside the chip, leading to performance degradation, shortened service life and even direct damage to the device.

[0003] The prior art usually focuses on matrix optimization, selecting a single type of epoxy resin to construct the matrix, such as selecting alicyclic epoxy resin to utilize its inherent low dielectric properties, or selecting aromatic epoxy resin to strengthen the mechanical strength and temperature resistance, and then adding thermal conductive fillers (such as aluminum oxide and boron nitride) to further improve the thermal conductivity. However, in use, it is difficult to ensure performance synergy while achieving wide compatibility, resulting in packaging materials that can only adapt to specific scenarios or single substrates, with limited compatibility. SUMMARY

[0004] To solve the problem of limited compatibility of packaging materials in the prior art, which can only adapt to specific scenarios or single substrates, the application provides a high-thermal-conductivity and low-dielectric epoxy resin-based electronic packaging material and a preparation method thereof.

[0005] In a first aspect, the application provides a high-thermal-conductivity and low-dielectric epoxy resin-based electronic packaging material, which is composed of the following components by weight: 62-70 parts of alicyclic epoxy resin; 8-10 parts of aromatic epoxy resin; 4-6 parts of reactive low-dielectric diluent; 20-26 parts of acid anhydride curing agent; 0.2-0.3 parts of latent catalyst A; 0.2-0.5 parts of latent catalyst B; 2.5-5.0 parts of diacetylenic crystal monomer; 0.01-0.04 parts of photo-thermal synergist; 0.08-0.18 parts of optical inhibitor; 0.8-1.2 parts of reactive anti-dissolution synergist; 0.02-0.04 parts of inhibitor; and 0.04-0.06 parts of scavenger.

[0006] By the technical scheme, the cycloaliphatic epoxy resin and the aromatic epoxy resin are used to form the matrix, and the reactive low-dielectric diluent is used to realize the formula dilution and participate in the network formation while maintaining the system compatibility; the acid anhydride curing agent, the latent catalyst A and the latent catalyst B are combined to trigger the epoxy curing and form the cross-linked structure; the diacetylene crystal monomer and the photothermal synergist are used to realize the photothermal reaction process under the controlled light condition, the ordered structure formed by the diacetylene crystal monomer and the photothermal synergist can build the continuous heat conduction path to improve the heat conduction performance, and at the same time, the ordered structure does not damage the electrically insulating network of the epoxy matrix, so that the performance synergy of high heat conduction, low dielectric and excellent insulation is realized, and the decline of the insulation performance caused by the addition of the heat conduction component is avoided; the optical inhibitor is used to limit the transition reaction of the surface layer and improve the curing consistency in the thickness direction; the reactive anti-dissolution synergist is used to adjust the dissolution and dispersion state of the diacetylene crystal monomer in the matrix; the inhibitor is used to limit the undesired side reaction; and the scavenger is used to remove the residual active species or by-products. The above components form an implementable curing system through the matching of the compatibility and the process condition, and the final product has excellent electrically insulating performance and can remain stable in the temperature fluctuation and electric field environment of the long-term operation of the chip, so that the insulation failure or high-temperature softening does not affect the operation of the chip. The combination of the matrix resin, the acid anhydride curing, the two-stage triggering of the latent catalyst, the synergy of the diacetylene crystal monomer and the photothermal / optical component, and the cooperation of the anti-dissolution, the inhibitor and the scavenger enable the composition to realize the compatibility and the controllability of the curing process in the same system, and achieve the technical effects of the compatibility and the product performance standard required by the high-heat-conduction low-dielectric epoxy resin-based electronic packaging material. In addition, the final product has the synergistic advantages of high heat conduction, low dielectric, excellent electrically insulating and high-temperature resistance, and can provide a stable packaging protection environment for the chip, effectively dissipate the heat of the chip, isolate the electrical interference and resist the temperature fluctuation, and guarantee the stability and long-term reliability of the chip operation from the material level.

[0007] Preferably, the cycloaliphatic epoxy resin comprises 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate. The aromatic epoxy resin comprises one or more of the following: bisphenol F type diglycidyl ether, bisphenol A type diglycidyl ether. The reactive low-dielectric diluent comprises cyclohexyl glycidyl ether.

[0008] By the above technical scheme: the alicyclic epoxy resin 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate and one or more of the aromatic epoxy resin bisphenol F type diglycidyl ether, bisphenol A type diglycidyl ether together constitute the epoxy matrix, both types of epoxy are functional resins that can react with anhydride system, used to form cross-linked structure in the curing process, wherein 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate; this kind of alicyclic epoxy resin not only has low dielectric properties, but also has excellent electrical insulation performance, can effectively isolate the electrical interference of chip operation, prevent leakage or signal crosstalk, the aromatic epoxy resin can enhance the crosslinking density, improve the high temperature resistance and mechanical strength of the final product, ensure that the material does not soften and degrade in the medium and high temperature environment of long-term operation of the chip; cooperate with the reaction type low dielectric diluent cyclohexyl glycidyl ether for dilution of the system during preparation and pouring, and the epoxy function of the diluent and the matrix reacts during the curing process, so that the diluent and the matrix are in the same cross-linked network, wherein the cyclohexyl glycidyl ether is cross-linked with the matrix through the epoxy function, which not only avoids the dielectric rise caused by the residual free small molecules, but also further optimizes the electrical insulation uniformity of the system, ensures the stability of signal transmission of the packaging material in the high frequency working scene of the chip, so as to maintain the compatibility of the matrix and the diluent and the consistency of the curing process within the formulation range, so as to form an implementable cross-linked network and compatible relationship in the same epoxy-anhydride curing system.

[0009] Preferably, the anhydride curing agent comprises one or more of the following: methyl tetrahydrophthalic anhydride, hexahydrophthalic anhydride, maleic anhydride; The latent catalyst A comprises 1-cyanoethyl-2-ethyl-4-methylimidazole; The latent catalyst B comprises: 1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate.

[0010] By the above technical scheme: the cross-linking bond energy formed by the reaction of the anhydride curing agent and the epoxy matrix is high, which further improves the high temperature resistance of the cured product, can withstand the local high temperature during chip operation, and reduces the dielectric performance fluctuation at high temperature, and the ring-opening reaction with the epoxy matrix to form a cross-linked structure, the cross-linked network structure is dense and stable, on the one hand, it gives the material excellent high temperature resistance, on the other hand, it further optimizes the electrical insulation performance, blocks the charge migration path, reduces the dielectric loss, the latent catalyst A and the latent catalyst B control the catalytic triggering and promotion of the epoxy-anhydride curing reaction, so as to distinguish the reaction in the gelation stage and the subsequent curing stage, realize both high thermal conductivity and long-term stable electrical insulation and high temperature resistance of the material, and meet the demand of chip packaging for multiple performance synergy of the material.

[0011] Preferably, the diacetylenic crystal monomer is 10,12-docosadiyne diacid; The photothermal synergist includes: 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole; The optical inhibitor includes: p-nitrophenyl ether; The reactive anti-dissolution synergist includes one or more of the following: cyclohexyl glycidyl ether, neopentyl glycol diglycidyl ether; The inhibitor includes: 2,6-di-tert-butyl-p-cresol; The cleaning agent includes N-hydroxyphthalimide.

[0012] Through the above technical solution: the diyne crystal monomer is 10,12-docosadiynediic acid, which forms an ordered aggregate structure under photothermal synergy. This structure not only constructs an efficient thermally conductive pathway but also synergistically forms an insulating barrier with the epoxy matrix, avoiding the insulation risk caused by direct contact between the thermally conductive component and the chip pins; the photothermal synergist is 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole, which works in conjunction with the reaction process of the diyne crystal monomer; the optical inhibitor is p-nitrobenzene ether, which limits local over-reaction and regulates the reaction rate distribution. By limiting excessive surface reaction, it avoids the brittleness or decreased insulation performance of the surface layer caused by excessive cross-linking, ensuring the thickness of the encapsulation material. Uniformity of upward electrical insulation and thermal conductivity; the reactive anti-dissolution synergist is cyclohexyl glycidyl ether and / or neopentyl glycol diglycidyl ether, which adjusts the dissolution and dispersion state of the diyne crystal monomer in the matrix, and reacts with the system through its epoxy function during the curing process to reduce the degree of freeness; the inhibitor is 2,6-di-tert-butyl-p-cresol, which limits undesirable side reactions; the scavenger is N-hydroxyphthalimide, which removes residual active species during or after curing. The combination of diyne crystal monomer with photothermal synergist and optical inhibitor, combined with the adjustment of dissolution and dispersion by reactive anti-dissolution synergist, and the control of side reactions and residual activity by inhibitor and scavenger.

[0013] Secondly, the application provides a method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, comprising the following steps: S1 Premix: Alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are mixed and stirred to make the matrix homogeneous; S2 addition and gating: Diyne crystal monomer, optical inhibitor and reactive anti-dissolution synergist are added sequentially, and the system temperature is controlled with transmittance as the indicator; S3 Addition and Degassing: Anhydride curing agent, latent catalyst A, latent catalyst B, photothermal synergist, inhibitor and scavenger are added in stages, and degassing is performed through two-stage vacuum process; S4 pregel: Heating in an inert atmosphere and determining the pregel window by online rheological monitoring; S5 in-situ topological polymerization: Narrow-band light source irradiation is used to achieve energy deposition using photothermal synergists, and the completion of topological polymerization is determined by online spectral monitoring; S6 anchoring and main curing: heating activates latent catalyst B and removes the end-group shielding of diyne crystal monomers, while applying an alternating electric field and causing the scavenger and inhibitor to react; S7 Cooling and Release: Sampling or demolding after the inert atmosphere is removed.

[0014] Through the above technical solution: S1 mixes and stirs alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent to make the matrix homogeneous, providing a stable substrate for the subsequent addition of functional components. S2 is added sequentially with diyne crystal monomer, optical inhibitor and reactive anti-dissolution synergist, and gating is performed with transmittance as an indicator to adjust the dissolution and dispersion state of diyne crystal monomer and control the timing of addition. S3 is added in stages with anhydride curing agent, latent catalyst A, latent catalyst B, photothermal synergist, inhibitor and scavenger, and the feeding sequence is matched with the degassing process through two-stage vacuum degassing. S4 is heated in an inert atmosphere and online rheological monitoring is performed to determine the pregelation window and serve as the process basis for transitioning from the feeding stage to the light irradiation stage. Online rheological monitoring in an inert atmosphere not only ensures the accuracy of the pregelation window, but also avoids the interference of oxygen and water vapor in the air on the system, prevents the formation of bubbles or impurities, and further ensures the electrical insulation uniformity and high temperature resistance stability of the cured product. S5 uses a narrow-band light source for irradiation and utilizes a photothermal synergist to achieve energy deposition. The completion of in-situ topological polymerization is determined by online spectral monitoring, which identifies the switching point from the photo-irradiation process to the thermal curing process. Online spectral monitoring ensures that the ordered structure formed by the diyne crystal monomers is uniform and sufficient, which not only ensures the integrity of the thermal conductivity path but also avoids fluctuations in electrical insulation performance caused by uneven polymerization, thus providing process assurance for the synergistic effect of multiple properties of the material. S6 heating activates latent catalyst B and removes the end-group shielding of diyne crystal monomers. Simultaneously, an alternating electric field is applied, and the scavenger reacts with the inhibitor, making the crosslinking reaction more complete. The crosslinking density of the cured material is further increased, and the high-temperature resistance is significantly enhanced. It can withstand the steady-state high temperature generated by chip operation for a long time. The simultaneously applied alternating electric field further reduces dielectric loss and enhances electrical insulation performance by regulating the polar molecular arrangement, ensuring stable signal transmission of the chip in high-frequency operating scenarios and reducing electromagnetic interference. After the inert atmosphere is removed, S7 is cooled and released. The slow cooling process can avoid internal stress caused by sudden temperature changes in the solidified material, prevent the insulation performance from deteriorating or mechanical cracking caused by internal stress, ensure the bonding stability between the packaging material and the chip and substrate, and further ensure the reliability of chip operation.

[0015] Preferably, in step S1, under an inert atmosphere, the mixture is stirred at 60–70°C and 150–400 rpm for 10–30 minutes to homogeneous matrix.

[0016] Through the above technical solution: In step S1, the alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are stirred under an inert atmosphere to make the system homogeneous. The inert atmosphere is used to isolate the active gas to reduce the viscosity fluctuation caused by side reactions or moisture absorption of the matrix during the premixing stage. The homogeneous matrix provides a stable optical background for the subsequent sequential addition of diyne crystal monomers, optical inhibitors and reactive anti-dissolution synergists, with transmittance as the gating index. It also provides consistent flow conditions for the staged addition of anhydride curing agents and latent catalysts and the two-stage vacuum degassing. It also supports the feasibility of online rheological determination of pregelation, in-situ topological polymerization determination under narrow band light, and temperature-activated latent catalyst and alternating electric field treatment.

[0017] Preferably, the specific steps of step S2 are as follows: S201. Add diyne crystal monomer and optical inhibitor at 60–70°C, and continue stirring for 10–20 min at a stirring speed of 200–400 rpm. S202, then add the reactive anti-dissolution synergist, using a step-by-step dropwise addition method at 0.10–0.20 parts by weight per step, stirring for 5–10 minutes at 60–70°C and 200–400 rpm after each addition; S203, cool to 50°C, use the transmittance at 600nm and 1mm optical path as an online indicator, the target transmittance is 5-30%, if the target is not reached, continue to increase or decrease the reactive anti-solution synergist in small steps within the above range.

[0018] The above technical solution involves: firstly, adding diyne crystal monomers and optical inhibitors to a homogeneous matrix under stirring conditions, followed by continued stirring, to establish a stable initial dispersion and optical background during the addition phase; then, adding a reactive anti-dissolution synergist using a stepwise dropwise addition method with sequential stirring under the same controlled conditions, allowing for rhythmic control of the synergist's entry and diffusion, adjusting the dissolution and dispersion state of the diyne crystal monomers in the matrix, and reducing the instantaneous concentration gradient caused by a single addition; subsequently, cooling is performed, and transmittance based on wavelength and optical path length is used as an online indicator. The addition phase is confirmed to be complete when the transmittance reaches the target range; if the target is not reached, closed-loop adjustment is performed within permissible limits by slightly increasing or decreasing the reactive anti-dissolution synergist. The combined effect of the above operations is that, through controlled addition, stepwise dropwise addition, and online transmittance gating, the interaction between the diyne crystal monomers, optical inhibitors, and reactive anti-dissolution synergist is confined within a monitorable and adjustable window, forming a reproducible initial state for subsequent feeding, degassing, and illumination steps.

[0019] Preferably, the specific steps of step S3 are as follows: S301. Add the anhydride curing agent and latent catalyst A sequentially at 50°C, and stir at a speed of 150–300 rpm for 3–8 min. S302, then perform the first vacuum degassing at a vacuum degree of -0.08 to -0.095 MPa for 5–10 min; S303. After the first degassing, add latent catalyst B, photothermal synergist, inhibitor and scavenger, and stir at 100-200 rpm for 3-5 minutes. S304, and then perform a second vacuum degassing at a vacuum degree of -0.08 to -0.095 MPa for 2–5 minutes; The operating temperature is controlled at 40–50°C.

[0020] The above technical solution involves: firstly, adding anhydride curing agent and latent catalyst A sequentially at a controlled temperature to pre-dispersettle the curing agent and catalyst A in a homogeneous matrix and setting the initial reaction cycle; then, performing a first vacuum degassing under vacuum to remove dissolved gases and entrained bubbles introduced by the previous feeding; subsequently, adding latent catalyst B, photothermal synergist, inhibitor, and scavenger and mixing under controlled stirring conditions to orderly introduce functional components for subsequent thermal triggering, photo-related processes, side reaction control, and residual activity removal; then, performing a second vacuum degassing under vacuum to further reduce the gas content in the system; the entire operation is carried out within a limited temperature range to constrain reaction activity and maintain rheological stability, thereby forming a synergistic relationship between the feeding sequence and the two-stage degassing, achieving control of the gas content of the mixture and the phased introduction of functional components to support the subsequent pre-gel determination, phototreatment, and main curing.

[0021] Preferably, in step S5: A narrowband light source with a center wavelength of 350–380 nm and a full width at half maximum (FWHM) of ≤30 nm is used, with a light intensity of 5–20 mW·cm. -2 Irradiate for 5–25 minutes, and monitor the spectrum until the absorbance ratio R of the two fixed wavelengths in the 450–700 nm range is 0.30–0.60 and this condition is maintained for 2–5 minutes before the irradiation ends.

[0022] Through the above technical solution: step S5 uses a narrowband light source, and the absorption ratio of two fixed wavelengths is used as an online monitoring index. When the absorption ratio reaches a predetermined range and continues for a predetermined duration, the irradiation ends. The narrowband light source is used to limit the incident spectral composition, and the absorption ratio and its duration criterion are used to convert the reaction endpoint into a monitorable and identifiable process signal and serve as the termination condition.

[0023] Preferably, the specific steps of step S6 are as follows: S601, heat to 150–180°C and hold for 60–180 min to activate latent catalyst B; S602. Simultaneously apply an alternating electric field with a frequency of 100–1000 Hz and a field strength of 0.1–0.8 kV·cm. -1 It lasts for 60–120 minutes.

[0024] The above technical solution involves heating to a set temperature and holding it for a certain period of time to activate latent catalyst B and promote the main curing reaction. During the heating and holding process, an alternating electric field with a set frequency and field strength is applied and maintained simultaneously to perform electric field treatment during the main curing stage.

[0025] In summary, this application has the following beneficial effects: 1. This application uses alicyclic epoxy resin and aromatic epoxy resin to form the matrix, and uses a reactive low dielectric diluent to form a network with the matrix during the curing process. Since the matrix and diluent are in the same crosslinking network and maintain compatibility and uniform dispersion in the formulation, a wide compatibility effect is achieved.

[0026] 2. This application uses an acid anhydride curing agent and latent catalysts A and B to trigger and promote curing in stages. In the in-situ light irradiation stage, diyne crystal monomers and photothermal synergists are introduced, along with a narrow-band light source and a fixed wavelength absorption ratio termination criterion, and optical inhibitors are used to control the surface reaction. Since the curing path is staged and the light irradiation endpoint can be quantified, the final product performance meets the standards.

[0027] 3. This application adopts a two-stage vacuum degassing process by adding reactive anti-dissolution synergists in stages and using gating indicators to achieve controlled dissolution / dispersion of diyne crystal monomers and control of gas content in the system.

[0028] 4. In this application, the latent catalyst B is activated by heating and an alternating electric field is applied simultaneously. At the same time, the scavenger and the inhibitor react synergistically during this stage. Since the main curing stage achieves network anchoring and residual active species treatment, the final curing process is executable and the cured network is stable. Attached Figure Description

[0029] Figure 1 This is a perspective view of this application. Detailed Implementation

[0030] The present application will be further described in detail below with reference to the accompanying drawings and embodiments.

[0031] The following are the main raw materials and reagents used in the examples and comparative examples, and their sources and specifications are as follows; unless otherwise specified, all reagents are commercially available analytical grade or higher products: 1. 3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., product number: E103015; 2. Bisphenol F diglycidyl ether, purchased from Guangdong Wengjiang Chemical Reagent Co., Ltd., CAS: 2095-03-6; 3. Bisphenol A diglycidyl ether, purchased from Wuhan Jixin Yibang Biotechnology Co., Ltd., CAS: 1675-54-3; 4. Cyclohexyl glycidyl ether, purchased from Shanghai Qiao Chemical Technology Co., Ltd., CAS: 3681-02-5; 5. Methyltetrahydrophthalic anhydride, purchased from Shanghai Huayuan Biochemical Technology Co., Ltd., CAS: 11070-44-3; 6. Hexahydrophthalic anhydride, purchased from Chongqing Yuanyuanxiang Technology Development Co., Ltd., CAS: 13149-00-3; 7. Maleic anhydride, purchased from Jinan Century Tongda Chemical Co., Ltd., CAS: 108-31-6; 8. 1-Cyanoethyl-2-ethyl-4-methylimidazole, purchased from Shanghai Maclean Biochemical Technology Co., Ltd., CAS: 23996-25-0; 9. 1,8-Diazabicyclo[5.4.0]undecene-p-toluenesulfonate, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., product number: D487124 10,12-docosadiynediic acid, purchased from Jilin Zhongke Science & Technology Co., Ltd., CAS: 28393-02-4; 11. 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., product number: D155328; 12. p-Nitrophenyl ether, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., product number: D155720; 13. Neopentyl glycol diglycidyl ether, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., product number: N121958; 14. 2,6-Di-tert-butyl-p-cresol, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd., CAS: 128-37-0; 15. N-hydroxyphthalimide, purchased from Xi'an Fanghao Chemical Co., Ltd., CAS: 524-38-9; Example 1 This application provides a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, composed of the following components by weight: 62 parts alicyclic epoxy resin, 10 parts aromatic epoxy resin, 4 parts reactive low dielectric diluent, 26 parts acid anhydride curing agent, 0.2 parts latent catalyst A, 0.5 parts latent catalyst B, 2.5 parts diyne crystal monomer, 0.04 parts photothermal synergist, 0.08 parts optical inhibitor, 1.2 parts reactive anti-dissolution synergist, 0.02 parts inhibitor, and 0.06 parts scavenger.

[0032] Among them, the alicyclic epoxy resin is selected from 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate; Aromatic epoxy resins are selected from bisphenol F diglycidyl ether; The reactive low-dielectric diluent is selected from cyclohexyl glycidyl ether; The anhydride curing agent is selected from methyltetrahydrophthalic anhydride; Latent catalyst A is selected from 1-cyanoethyl-2-ethyl-4-methylimidazolium; The latent catalyst B is selected from 1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate; The diyne crystal monomer is selected from 10,12-docodiynediic acid; The photothermal synergist is selected from 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole; The optical inhibitor is selected from p-nitrobenzene ether; The reactive anti-dissolution synergist is selected from neopentyl glycol diglycidyl ether; The inhibitor is selected from 2,6-di-tert-butyl-p-cresol; The cleaning agent is selected from N-hydroxyphthalimide.

[0033] S1 Premix: Under the protection of nitrogen inert atmosphere, alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are added to the mixing equipment, the temperature is controlled at 60°C, and the mixture is stirred at 400 rpm for 10 minutes to make the resin matrix reach a homogeneous state.

[0034] S2 addition and gating: First, diyne crystal monomers and optical inhibitors were added to the homogeneous matrix at 60°C, and stirred at 200 rpm for 20 min. Then, reactive anti-dissolution synergist was added in steps, with each step adding 0.1 parts by weight. After each addition, the mixture was stirred at 60°C and 200 rpm for 10 min. Finally, the system was cooled to 50°C, and the transmittance was measured at 600 nm and 1 mm optical path. The result was 28%, which meets the target range of 5-30%, and no adjustment of the reactive anti-dissolution synergist dosage is required.

[0035] S3 Addition and Degassing: First, add the anhydride curing agent and latent catalyst A sequentially to the system at 50°C, and stir at 300 rpm for 3 min; then perform the first vacuum degassing at -0.08 MPa for 10 min; after the first degassing, perform the S303 operation, adding latent catalyst B, photothermal synergist, inhibitor and scavenger, and stirring at 100 rpm for 5 min; finally, perform the second vacuum degassing at -0.095 MPa for 2 min, controlling the operating temperature within the range of 40-50°C throughout the process.

[0036] S4 Pregelation: The degassed system is transferred to an inert atmosphere-protected device and slowly heated to 80°C. The viscosity change of the system is tracked in real time by online rheological monitoring. When the viscosity suddenly increases to 5000 cP, the pregelation window is considered to have ended.

[0037] S5 in-situ topological polymerization: The pre-gelled system was irradiated with a narrow-band light source with the following parameters: center wavelength 350 nm, full width at half maximum (FWHM) 25 nm, and light intensity controlled at 20 mW·cm⁻¹. -2 The irradiation time was 5 minutes. At the same time, the absorption change of the system in the 450-700nm range was monitored by online spectral monitoring. When the absorption ratio R between 450nm and 650nm wavelengths was 0.60 and this ratio lasted for 2 minutes, the in-situ topological polymerization was terminated.

[0038] S6 Anchoring and Main Curing: First, the system is heated to 180°C and held for 60 minutes to activate latent catalyst B; simultaneously, the S602 operation is performed, applying an alternating electric field with parameters of 1000Hz frequency and 0.1kV·cm. -1 The electric field was applied for 120 minutes.

[0039] S7 Cooling and Release: After the main curing is complete, remove the inert atmosphere and allow the system to cool naturally to 25°C. After cooling to room temperature, demold.

[0040] Example 2 This application provides a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, composed of the following components by weight: 66 parts alicyclic epoxy resin, 9 parts aromatic epoxy resin, 5 parts reactive low dielectric diluent, 23 parts acid anhydride curing agent, 0.25 parts latent catalyst A, 0.35 parts latent catalyst B, 3.75 parts diyne crystal monomer, 0.025 parts photothermal synergist, 0.13 parts optical inhibitor, 1.0 part reactive anti-dissolution synergist, 0.03 parts inhibitor, and 0.05 parts scavenger.

[0041] Among them, the alicyclic epoxy resin is selected from 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate; the aromatic epoxy resin is selected from a mixture of bisphenol A type diglycidyl ether and bisphenol F type diglycidyl ether (mass ratio 1:1); the reactive low dielectric diluent is selected from cyclohexyl glycidyl ether; the acid anhydride curing agent is selected from hexahydrophthalic anhydride; the latent catalyst A is selected from 1-cyanoethyl-2-ethyl-4-methylimidazolium; and the latent catalyst B is selected from 1 ,8-Diazabicyclo[5.4.0]undecene-p-toluenesulfonate; the diyne crystal monomer is selected from 10,12-docosadiynediic acid; the photothermal synergist is selected from 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole; the optical inhibitor is selected from p-nitrobenzene ether; the reactive anti-dissolution synergist is selected from cyclohexyl glycidyl ether; the inhibitor is selected from 2,6-di-tert-butyl-p-cresol; the scavenger is selected from N-hydroxyphthalimide.

[0042] S1 Premix: Under the protection of nitrogen inert atmosphere, alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are added to the mixing equipment, the temperature is controlled at 65°C, and the mixture is stirred at 275 rpm for 20 minutes to make the resin matrix reach a homogeneous state.

[0043] S2 addition and gating: First, diyne crystal monomers and optical inhibitors were added to the homogeneous matrix at 65°C, and stirred at 300 rpm for 15 min. Then, reactive anti-dissolution synergist was added in steps, with each step adding 0.15 parts by weight. After each addition, the mixture was stirred at 65°C and 300 rpm for 7.5 min. Finally, the system was cooled to 50°C, and the transmittance was measured at 600 nm and 1 mm optical path. The result was 18%, which meets the target range of 5-30%, and no adjustment of the reactive anti-dissolution synergist dosage is required.

[0044] S3 Addition and Degassing: First, add the anhydride curing agent and latent catalyst A sequentially to the system at 50°C, and stir at 225 rpm for 5.5 min; then perform the first vacuum degassing at -0.0875 MPa for 7.5 min; after the first degassing, add latent catalyst B, photothermal synergist, inhibitor and scavenger, and stir at 150 rpm for 4 min; finally, perform the second vacuum degassing at -0.0875 MPa for 3.5 min, and control the operating temperature within the range of 40-50°C throughout the process.

[0045] S4 Pregelation: The degassed system is transferred to an argon-inert atmosphere protected device and slowly heated to 85°C. The viscosity change of the system is tracked in real time by online rheological monitoring. When the viscosity suddenly increases to 5500 cP, the pregelation window is considered to have ended.

[0046] S5 in-situ topological polymerization: The pre-gelled system was irradiated with a narrow-band light source with the following parameters: center wavelength 365 nm, full width at half maximum (FWHM) 28 nm, and light intensity controlled at 12.5 mW·cm⁻¹. -2 The irradiation time was 15 min; at the same time, the absorption change of the system in the 450-700 nm range was monitored by online spectral monitoring. When the absorption ratio R of 480 nm and 680 nm wavelengths was 0.45 and this ratio lasted for 3.5 min, the in-situ topological polymerization was terminated.

[0047] S6 Anchoring and Main Curing: First, the system is heated to 165°C and held for 120 min to activate latent catalyst B; simultaneously, an alternating electric field is applied with the following parameters: frequency 550 Hz, field strength 0.45 kV·cm. -1 The electric field was applied for 90 minutes.

[0048] S7 Cooling and Release: After the main curing is complete, remove the inert atmosphere and allow the system to be cooled to 30°C by air blowing. After cooling to the target temperature, demold.

[0049] Example 3 This application provides a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, composed of the following components by weight: 70 parts alicyclic epoxy resin, 8 parts aromatic epoxy resin, 6 parts reactive low dielectric diluent, 20 parts acid anhydride curing agent, 0.3 parts latent catalyst A, 0.2 parts latent catalyst B, 5.0 parts diyne crystal monomer, 0.01 parts photothermal synergist, 0.18 parts optical inhibitor, 0.8 parts reactive anti-dissolution synergist, 0.04 parts inhibitor, and 0.04 parts scavenger.

[0050] Among them, the alicyclic epoxy resin is selected from 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate; the aromatic epoxy resin is selected from bisphenol A type diglycidyl ether; the reactive low dielectric diluent is selected from cyclohexyl glycidyl ether; the acid anhydride curing agent is selected from maleic anhydride; the latent catalyst A is selected from 1-cyanoethyl-2-ethyl-4-methylimidazolium; the latent catalyst B is selected from 1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate; the diyne crystal monomer is selected from 10,12-docosadiynediic acid; the photothermal synergist is selected from 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole; the optical inhibitor is selected from p-nitrobenzene ether; the reactive anti-dissolution synergist is selected from neopentyl glycol diglycidyl ether; the inhibitor is selected from 2,6-di-tert-butyl-p-cresol; and the scavenger is selected from N-hydroxyphthalimide.

[0051] S1 Premix: Under the protection of nitrogen inert atmosphere, alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are added to the mixing equipment, the temperature is controlled at 70°C, and the mixture is stirred at 150 rpm for 30 minutes to make the resin matrix reach a homogeneous state.

[0052] S2 addition and gating: First, diyne crystal monomers and optical inhibitors were added to the homogeneous matrix at 70°C, and stirred at 400 rpm for 10 min. Then, reactive anti-dissolution synergist was added in steps, with each step adding 0.2 parts by weight. After each addition, the mixture was stirred at 70°C and 400 rpm for 5 min. Finally, the system was cooled to 50°C, and the transmittance was measured at 600 nm and 1 mm optical path. The result was 7%, which is within the target range of 5-30%, and no adjustment of the reactive anti-dissolution synergist dosage was required.

[0053] S3 Addition and Degassing: First, add the anhydride curing agent and latent catalyst A sequentially to the system at 45°C, and stir at 150 rpm for 8 min; then perform the first vacuum degassing at -0.095 MPa for 5 min; after the first degassing, add latent catalyst B, photothermal synergist, inhibitor and scavenger, and stir at 200 rpm for 3 min; finally, perform the second vacuum degassing at -0.08 MPa for 5 min, and control the operating temperature within the range of 40-50°C throughout the process.

[0054] S4 Pregelation: The degassed system is transferred to an argon-inert atmosphere protected device and slowly heated to 90°C. The viscosity change of the system is tracked in real time by online rheological monitoring. When the viscosity suddenly increases to 6000 cP, the pregelation window is considered to have ended.

[0055] S5 in-situ topological polymerization: The pre-gelled system was irradiated with a narrow-band light source with the following parameters: center wavelength 380 nm, full width at half maximum (FWHM) 30 nm, and light intensity controlled at 5 mW·cm⁻¹. -2 The irradiation time was 25 min. At the same time, the absorption change of the system in the 450-700 nm range was monitored by online spectral monitoring. When the absorption ratio R of 500 nm and 700 nm wavelengths was 0.30 and this ratio lasted for 5 min, the in-situ topological polymerization was terminated.

[0056] S6 Anchoring and Main Curing: First, the system is heated to 150°C and held for 180 min to activate latent catalyst B; simultaneously, an alternating electric field is applied with the following parameters: frequency 100 Hz, field strength 0.8 kV·cm. -1 The electric field was applied for 60 minutes.

[0057] S7 Cooling and Release: After the main curing is complete, remove the inert atmosphere, allow the system to be water-cooled to 25°C, and then demold after cooling to room temperature.

[0058] Comparative Example 1 The only difference from Example 1 is that the reactive anti-dissolution synergist (neopentyl glycol diglycidyl ether) was not added in step S2, while the other raw material composition and preparation process parameters are the same as in Example 1.

[0059] Comparative Example 2 The only difference from Example 1 is that in step S203, the transmittance of 600nm and 1mm optical path is not used as the control index, and the amount of reactive anti-dissolution synergist is determined by experience. The other raw material composition and preparation process parameters are the same as in Example 1.

[0060] Comparative Example 3 The only difference from Example 1 is that the photothermal synergist (2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole) is replaced with a common photoinitiator (2,4,6-trimethylbenzoyl-diphenylphosphine oxide, TPO). The remaining raw material composition and preparation process parameters are the same as in Example 1.

[0061] Comparative Example 4 The only difference from Example 1 is that no optical inhibitors were added to the raw materials, while the composition of the other raw materials and the preparation process parameters are the same as those in Example 1.

[0062] Comparative Example 5 The only difference from Example 1 is that latent catalyst A (1-cyanoethyl-2-ethyl-4-methylimidazolium) is removed, and only latent catalyst B (1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate) is retained. The composition of other raw materials and preparation process parameters are the same as those in Example 1.

[0063] Comparative Example 6 The only difference from Example 1 is that no inhibitor was added to the raw materials, while the composition of the other raw materials and the preparation process parameters are the same as those in Example 1.

[0064] Comparative Example 7 The only difference from Example 1 is that no cleaning agent was added to the raw materials, while the composition of the other raw materials and the preparation process parameters are the same as those in Example 1.

[0065] Comparative Example 8 The only difference from Example 1 is that the reactive low dielectric diluent is replaced with a non-reactive diluent (dibutyl phthalate), while the other raw material composition and preparation process parameters are the same as in Example 1.

[0066] Comparative Example 9 The only difference from Example 1 is that the pregelation window was not determined by online rheological monitoring in step S4. Instead, the temperature was fixed at 80°C and held for 15 minutes before proceeding to S5. The remaining raw material composition and preparation process parameters were the same as in Example 1.

[0067] Comparative Example 10 The only difference from Example 1 is that a broadband light source with a center wavelength of 300-400nm and a half-width of 50nm is used in step S5 to replace the original narrowband light source of 350-380nm. The other raw material composition and preparation process parameters are the same as those in Example 1.

[0068] Comparative Example 11 The only difference from Example 1 is that the absorption ratio in the 450-700nm range was not monitored in step S5, and the process proceeded to S6 after a fixed irradiation of 5 minutes. The remaining raw material composition and preparation process parameters were the same as in Example 1.

[0069] Comparative Example 12 The only difference from Example 1 is that the first vacuum degassing is removed in step S3, and vacuum degassing is only performed once after all components are added. The remaining raw material composition and preparation process parameters are the same as in Example 1.

[0070] Comparative Example 13 The only difference from Example 1 is that no alternating electric field was applied in step S6, and the temperature was only raised to 180°C and held for 60 minutes. The other raw material composition and preparation process parameters are the same as in Example 1.

[0071] Comparative Example 14 The only difference from Example 1 is that the reactive anti-dissolution synergist is added all at once in step S202, instead of being added dropwise in 0.1 parts by weight per step. The composition of the other raw materials and the preparation process parameters are the same as in Example 1.

[0072] Experimental content I. Thermal conductivity testing Each sample was processed into a Φ12.7mm×2mm disc, polished, wiped with ethanol to remove impurities, and dried before use. A NETZSCH HLA FA467 laser flash thermal conductivity meter was used for testing under nitrogen atmosphere conditions of 50 mL / min and 25℃. The instrument was first calibrated with a standard alumina ceramic. The sample was then placed on the sample stage, and a momentary laser pulse was emitted onto the upper surface of the sample. The temperature-time curve was recorded by thermocouples on the lower surface. The instrument automatically calculated the thermal diffusivity (α), and the sample density (ρ) was determined using the water displacement method. The specific heat capacity (c) was determined according to ASTM D5470-2017, "Standard Test Method for Thermal Conductivity of Polymer Matrix Composites". p According to the formula, the thermal conductivity λ = α × ρ × c p The calculation was performed, and the average value of three parallel samples was taken as the final result, with the unit being W / (m·K).

[0073] II. Dielectric property testing Each sample was processed into a 20mm × 20mm × 1mm square sheet. Gold-plated electrodes were sputtered onto the top and bottom surfaces, ensuring the electrodes were free of pinholes and had no over-plating at the edges. Following IEC 60250-2015 "Measurement of dielectric loss factor and relative permittivity of solid insulating materials", an Agilent E4980A precision impedance analyzer was used at 25℃ and 50% ± 5% relative humidity, with a test frequency of 1MHz (a common frequency in high-frequency applications of electronic packaging). Open-circuit and short-circuit calibrations were performed first. Then, the sample was placed in the electrode holder, and a 1V AC voltage was applied. The capacitance (C) and dielectric loss tangent (tanδ) were measured. The dielectric constant εᵣ was calculated using the formula C × d / (ε₀ × S) (where d is the sample thickness and ε₀ is the vacuum dielectric constant 8.85 × 10⁻⁶). -12 (F / m, S is the electrode area), tanδ is the instrument data directly read, and the average value of 3 parallel tests is taken.

[0074] III. Strength Testing Each sample was processed into a strip of 80mm × 10mm × 4mm, with chamfered ends. Following GB / T9341-2008 "Determination of Bending Properties of Plastics", an INSTRON 5969 universal testing machine was used in three-point bending mode, with a span L = 40mm and a loading rate of 2mm / min until the sample fractured. The maximum load (F) was recorded. The bending strength was calculated using the formula σ = 3FL / (2bh). 2 Calculate (where b is the sample width and h is the sample thickness), in MPa, and take the average of the effective values ​​of 3 parallel samples (discard invalid data where the fracture location deviates from the center of the span by ±5mm).

[0075] IV. Substrate Adhesion Testing Each sample was uniformly coated onto the surface of copper foil (35μm thick) and alumina ceramic substrate (1mm thick), with a coating thickness of 50μm±5μm. The coatings were cured according to the corresponding process to form composite samples. Referring to GB / T9286-1998 "Cross-cut test for paint and varnish films", 11×11 vertical scratches were made on the coating surface using a cross-cutting knife (1mm spacing), forming 100 1mm×1mm squares. The squared areas were then tightly adhered with 3M 610 tape, pressed for 10 seconds, and then quickly peeled off at a 180° angle. The coating peeling within the squares was observed and classified according to the standard as 0B (complete peeling) to 5B (no peeling). The highest grade among three parallel samples was taken as the final adhesion grade.

[0076] Table 1 shows the experimental tables above.

[0077] Experimental instructions 1. As can be seen from Examples 1-3 and Comparative Example 1, and Table 1, the reactive anti-dissolution synergist can construct a continuous thermal conductivity pathway by optimizing the interfacial compatibility between the resin matrix and the diyne crystal monomer, while reducing the interfacial polarization effect to reduce dielectric loss. After removing the reactive anti-dissolution synergist, not only does the system compatibility decrease, leading to the breakage of the thermal conductivity pathway and causing the thermal conductivity to decrease from 1.82 W / (m·K) in Example 1 to 1.25 W / (m·K), but the dielectric constant also increases from 2.85 to 3.52 due to the enhanced interfacial polarization. Furthermore, the uneven dispersion of components weakens the bonding force between the resin and the substrate, resulting in a decrease in flexural strength from 128 MPa to 98 MPa and a decrease in copper foil adhesion from 5B to 3B. This effect is reflected in multiple related performance indicators, including thermal conductivity, dielectric properties, mechanical properties, and process compatibility.

[0078] 2. Combining Examples 1-3 and Comparative Example 3 with Table 1, it can be seen that 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole can synergistically enhance the photopolymerization and thermal polymerization processes, reducing polymerization defects and improving the structural stability of the system. When it is replaced with a common photoinitiator (TPO), the synergistic effect of photopolymerization disappears, and disordered cross-linked structures are easily generated during the polymerization process, resulting in a decrease in thermal conductivity from 1.82 W / (m·K) in Example 1 to 1.38 W / (m·K), an increase in dielectric loss from 0.0082 to 0.0132, and a decrease in structural stability, which increases the rate of change of dielectric constant during thermal cycling from 2.1% to 6.3%. At the same time, the adhesion between the resin and the ceramic substrate decreases from 5B to 4B, further demonstrating the key role of the dedicated photothermal synergist in performance balance.

[0079] 3. Combining Examples 1-3 and Comparative Example 5 with Table 1, it can be seen that the compound system of 1-cyanoethyl-2-ethyl-4-methylimidazolium and 1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate can precisely control the polymerization kinetics and optimize the crosslinking network density. After removing the latent catalyst A, the uncontrolled polymerization rate led to uneven crosslinking network, causing the thermal conductivity to decrease from 1.82 W / (m·K) in Example 1 to 1.12 W / (m·K), the dielectric constant to increase from 2.85 to 3.68, the flexural strength to decrease from 128 MPa to 92 MPa, and the structural stability to decrease significantly. The change rate of dielectric constant during thermal cycling increased from 2.1% to 10.5%, and the adhesion between the copper foil and the ceramic substrate decreased from 5B to 2B, highlighting the synergistic necessity of the compound.

[0080] 4. Combining Examples 1-3 and Comparative Example 8 with Table 1, it can be seen that cyclohexyl glycidyl ether can participate in the polymerization reaction, reduce free small molecules in the system to reduce dielectric loss, and improve resin flowability to enhance component dispersibility. After replacing it with a non-reactive diluent (dibutyl phthalate), the increase in free small molecules led to an increase in dielectric constant from 2.85 in Example 1 to 3.82, dielectric loss from 0.0082 to 0.0210, and the non-reactive diluent weakened the crosslinking network strength, causing the thermal conductivity to decrease from 1.82 W / (m·K) to 1.05 W / (m·K), the flexural strength to decrease from 128 MPa to 88 MPa, and the thermal stability to decrease significantly, with the thermal weight loss temperature (T5%) decreasing from 362℃ to 308℃, demonstrating the supporting role of the reactive diluent in performance.

[0081] 5. Combining Examples 1-3 and Comparative Example 13 with Table 1, it can be seen that alternating electric field-assisted curing can induce the directional arrangement of polar groups in the system, reduce disordered structure to improve thermal conductivity and reduce dielectric loss. After removing the alternating electric field, the random distribution of polar groups leads to obstruction of the thermal conductivity path, and the thermal conductivity decreases from 1.82 W / (m·K) in Example 1 to 1.45 W / (m·K), while the dielectric constant increases from 2.85 to 3.22. At the same time, the disordered structure slightly affects the bending strength, decreasing from 128 MPa to 110 MPa. However, since the component compatibility is not compromised, the substrate adhesion still maintains the 4B level, indicating that the alternating electric field mainly optimizes thermal conductivity and dielectric properties, and has little impact on process compatibility.

[0082] 6. Combining Examples 1-3 and Comparative Example 14 with Table 1, it can be seen that the stepwise addition of the reactive anti-dissolution synergist can avoid agglomeration caused by excessively high local concentrations, ensuring its uniform dispersion to fully exert its interface regulation effect. When added all at once, local agglomeration causes an imbalance in the synergist's effect, the thermal conductivity decreases from 1.82 W / (m·K) in Example 1 to 1.52 W / (m·K), the dielectric constant increases from 2.85 to 3.15, and the flexural strength decreases from 128 MPa to 115 MPa. Furthermore, the agglomerated particles slightly affect the structural stability, and the rate of change of dielectric constant during thermal cycling increases from 2.1% to 5.2%. However, since the overall compatibility is not compromised, the substrate adhesion still maintains a 4B grade, demonstrating the importance of the stepwise addition process for performance uniformity.

[0083] 7. Combining Examples 1-3 and Comparative Examples 4 and 12 with Table 1, it can be seen that p-nitrobenzene ether and the two-stage vacuum degassing process are both aimed at reducing system defects. Removing the optical inhibitor will cause local overreaction during photopolymerization, generating microbubbles or carbonized particles, which will reduce the adhesion between the copper foil and the ceramic substrate from 5B to 2B, and increase the rate of change of dielectric constant during thermal cycling from 2.1% to 9.2%. Removing the first vacuum degassing will leave residual bubbles, which will cause the dielectric constant to increase from 2.85 to 3.40 and the bending strength to decrease from 128MPa to 103MPa.

[0084] 8. Combining Examples 1-3 and existing conventional epoxy resin encapsulation materials (EP-618) with Table 1, it can be seen that the thermal conductivity (1.68-1.82 W / (m·K)) is 4.8-5.2 times that of the blank control sample (0.35 W / (m·K)), the dielectric constant (2.85-2.98) is 32.2%-32.9% lower than that of the existing conventional epoxy resin encapsulation material (EP-618) (4.25), the flexural strength (122-128 MPa) is 43.5%-50.6% higher than that of the existing conventional epoxy resin encapsulation material (EP-618) (85 MPa), and the thermal cycling stability and substrate adhesion are significantly better than those of the blank control sample.

[0085] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, characterized in that, It is composed of the following components in parts by weight: 62–70 parts alicyclic epoxy resin; 8–10 parts aromatic epoxy resin; 4–6 parts reactive low dielectric diluent; 20–26 parts acid anhydride curing agent; 0.2–0.3 parts latent catalyst A; 0.2–0.5 parts latent catalyst B; 2.5–5.0 parts diyne crystal monomer; 0.01–0.04 parts photothermal synergist; 0.08–0.18 parts optical inhibitor; 0.8–1.2 parts reactive anti-dissolution synergist; 0.02–0.04 parts inhibitor; and 0.04–0.06 parts scavenger.

2. The high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 1, characterized in that, The alicyclic epoxy resin includes: 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate; The aromatic epoxy resin includes one or more of the following: bisphenol F diglycidyl ether, bisphenol A diglycidyl ether; The reactive low-dielectric diluent includes cyclohexyl glycidyl ether.

3. The high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 1, characterized in that, The anhydride curing agent includes one or more of the following: methyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, and maleic anhydride; The latent catalyst A comprises 1-cyanoethyl-2-ethyl-4-methylimidazolium; The latent catalyst B comprises: 1,8-diazabicyclo[5.4.0]undecene-p-toluenesulfonate.

4. The high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 1, characterized in that, The diyne crystal monomer is 10,12-docodiynediic acid; The photothermal synergist includes: 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole; The optical inhibitor includes: p-nitrophenyl ether; The reactive anti-dissolution synergist includes one or more of the following: cyclohexyl glycidyl ether, neopentyl glycol diglycidyl ether; The inhibitor includes: 2,6-di-tert-butyl-p-cresol; The cleaning agent includes N-hydroxyphthalimide.

5. A method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material, characterized in that, A high thermal conductivity, low dielectric epoxy resin-based electronic packaging material for any one of claims 1-4 comprises the following steps: S1 Premix: Alicyclic epoxy resin, aromatic epoxy resin and reactive low dielectric diluent are mixed and stirred to make the matrix homogeneous; S2 addition and gating: Diyne crystal monomer, optical inhibitor and reactive anti-dissolution synergist are added sequentially, and the system temperature is controlled with transmittance as the indicator; S3 Addition and Degassing: Anhydride curing agent, latent catalyst A, latent catalyst B, photothermal synergist, inhibitor and scavenger are added in stages, and degassing is performed through two-stage vacuum process; S4 pregel: Heating in an inert atmosphere and determining the pregel window by online rheological monitoring; S5 in-situ topological polymerization: Narrow-band light source irradiation is used to achieve energy deposition using photothermal synergists, and the completion of topological polymerization is determined by online spectral monitoring; S6 anchoring and main curing: heating activates latent catalyst B and removes the end-group shielding of diyne crystal monomers, while applying an alternating electric field and causing the scavenger and inhibitor to react; S7 Cooling and Release: Sampling or demolding after the inert atmosphere is removed.

6. The method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 5, characterized in that: In step S1, under an inert atmosphere, the mixture is stirred at 60–70°C and 150–400 rpm for 10–30 minutes to homogeneous matrix.

7. The method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 5, characterized in that, The specific steps of step S2 are as follows: S201. Add diyne crystal monomer and optical inhibitor at 60–70°C, and continue stirring for 10–20 min at a stirring speed of 200–400 rpm. S202, then add the reactive anti-dissolution synergist, using a step-by-step dropwise addition method at 0.10–0.20 parts by weight per step, stirring for 5–10 minutes at 60–70°C and 200–400 rpm after each addition; S203, cool to 50°C, use the transmittance at 600nm and 1mm optical path as an online indicator, the target transmittance is 5-30%, if the target is not reached, continue to increase or decrease the reactive anti-solution synergist in small steps within the above range.

8. The method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 5, characterized in that, The specific steps of step S3 are as follows: S301. Add the anhydride curing agent and latent catalyst A sequentially at 50°C, and stir at a speed of 150–300 rpm for 3–8 min. S302, then perform the first vacuum degassing at a vacuum degree of -0.08 to -0.095 MPa for 5–10 min; S303. After the first degassing, add latent catalyst B, photothermal synergist, inhibitor and scavenger, and stir at 100-200 rpm for 3-5 minutes. S304, and then perform a second vacuum degassing at a vacuum degree of -0.08 to -0.095 MPa for 2–5 minutes; The operating temperature is controlled at 40–50°C.

9. The method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 5, characterized in that, In step S5: A narrowband light source with a center wavelength of 350–380 nm and a full width at half maximum (FWHM) of ≤30 nm is used, with a light intensity of 5–20 mW·cm. -2 Irradiate for 5–25 minutes, and monitor the spectrum until the absorbance ratio R of the two fixed wavelengths in the 450–700 nm range is 0.30–0.60 and this condition is maintained for 2–5 minutes.

10. The method for preparing a high thermal conductivity, low dielectric epoxy resin-based electronic packaging material according to claim 5, characterized in that, The specific steps of step S6 are as follows: S601, heat to 150–180°C and hold for 60–180 min to activate latent catalyst B; S602. Simultaneously apply an alternating electric field with a frequency of 100–1000 Hz and a field strength of 0.1–0.8 kV·cm. -1 It lasts for 60–120 minutes.

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