Cluster beam device

Abstract

The invention discloses cluster beam equipment, which relates to the technical field of cluster beams and comprises a working platform, and a cluster generation mechanism, a beam regulation and control mechanism, a beam screening mechanism and a deposition mechanism which are connected in sequence. The working platform is provided with a sliding rail and a sliding structure, so that all mechanisms can be flexibly positioned, disassembled and assembled. The cluster generation mechanism comprises an angle-adjustable condensation cavity, an adjustable nozzle and an ion funnel, so that accurate generation of clusters is realized; a conical sputter of the beam regulation and control mechanism separates non-scattering beams; the beam screening mechanism adapts to different quality screening requirements through an ion optical assembly and a multi-layer conductive polar plate quality selector; the deposition mechanism is provided with a full-degree-of-freedom manipulator, a magnetic driving rod and a telescopic mechanism, substrate installation and adjustment are conveniently completed, and the stability of the vacuum environment is guaranteed. The equipment solves the problems that existing equipment is inconvenient to adjust, complex to operate, insufficient in stability and the like, the assembling and debugging efficiency and adaptability are improved, and the equipment is suitable for material preparation in multiple fields.

Description

Technical Field

[0001] This invention relates to the field of cluster beam technology, and particularly to a cluster beam device. Background Technology

[0002] Cluster beaming technology, a core supporting technology in the intersection of nanomaterials science and surface engineering, involves the controlled aggregation of atoms and molecules through physical or chemical means to form clusters at the nanoscale. These clusters are then precisely delivered to the target substrate surface in the form of a directional beam using specialized equipment for deposition. This technology plays an irreplaceable role in key areas such as next-generation semiconductor device fabrication, high-performance functional coating development, biomedical material modification, and new energy material optimization, as it can maximally preserve the unique quantum size effects, surface effects, and mesoscopic properties of clusters. It has become one of the important technological directions driving breakthroughs in material performance and upgrading related industries.

[0003] Existing cluster beam generation equipment typically consists of multiple functional modules, including an atomic gas generation system, a gas phase condensation system, a beam extraction and focusing system, a quality selection system, and a beam deposition system. To meet stringent requirements such as cluster size accuracy and vacuum environment stability, the equipment requires the installation, debugging, and repeated disassembly and reassembly of numerous components during assembly. However, existing equipment has many problems that urgently need to be solved: First, the equipment components are generally heavy and bulky, and frequent disassembly and assembly operations can easily lead to physical fatigue of production personnel, significantly reducing production and debugging efficiency, while increasing the risk of damage such as collision and wear of components; Second, during the cluster generation process, the condensation direction of atomic vapor is difficult to control precisely, resulting in poor directionality and uniformity of the cluster beam, affecting subsequent transmission and deposition effects; Third, the beam focusing and transmission efficiency is insufficient, and the quality screening mechanism of some equipment is difficult to flexibly adapt to the cluster screening requirements of different quality specifications, and the screening resolution is limited; Fourth, during the deposition process, the installation, position adjustment and replacement of the substrate are complicated, which can easily damage the vacuum environment of the deposition chamber, leading to a decrease in the stability of the deposition process; Fifth, the adaptability and debugging convenience of the various functional modules of the equipment are poor, making it difficult to quickly respond to the process parameter adjustment requirements under different material preparation scenarios, thus limiting the applicability of the equipment. Summary of the Invention

[0004] To address the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a cluster beam device that can achieve efficient assembly and debugging and component protection, accurately control the cluster generation, transport and quality screening process, ensure the stability of the deposition vacuum environment, and adapt to the needs of different material preparation scenarios.

[0005] To solve the above-mentioned technical problems, one technical solution adopted by the present invention is: to provide a cluster beam device for realizing the generation, screening, and deposition of clusters, including: A cluster generation mechanism includes an ion source, a condensation chamber at least partially arranged around the outer periphery of the ion source, and an adjustable nozzle. The adjustable nozzle is disposed at the end of the condensation chamber corresponding to the cluster ejection end, and the end of the condensation chamber corresponding to the cluster injection end is connected to an angle adjustment mechanism to adjust the angle of the condensation chamber. A beam control mechanism for separating a non-scattering beam includes a sputterer, which is installed at the cluster emission end of the cluster generation mechanism; A beam filtering mechanism is connected to the side of the beam control mechanism away from the cluster generation mechanism. It includes an ion optical introduction device, a mass selector, and an ion optical extraction device connected in sequence. The cluster beam is emitted from the beam control mechanism, enters the mass selector through the ion optical introduction device, and is then emitted through the ion optical extraction device. The deposition mechanism includes a fourth chamber, a substrate mounting structure disposed within the fourth chamber, a molecular pump for evacuating the interior of the fourth chamber, and an evaporation source disposed on the side wall of the fourth chamber. It also includes a fully free-degree-of-freedom manipulator and a magnetic drive rod, wherein the fully free-degree-of-freedom manipulator and the magnetic drive rod are used to cooperate to mount the substrate in the substrate mounting structure and adjust its position.

[0006] Furthermore, the cluster generation mechanism also includes a first chamber, one end of the ion source extends into the first chamber and is connected to the first chamber through a differential chamber, the condensation chamber is disposed in the first chamber and surrounds the section of the ion source extending into the first chamber, the condensation chamber is connected to the differential chamber through the angle adjustment mechanism, and the sputterer is installed at the end of the first chamber away from the ion source.

[0007] Furthermore, the ion source includes a guide rod, a sputtering cathode, a connecting structure, and a first flange for connecting the guide rod to the differential cavity. One end of the guide rod near the differential cavity is connected to the sputtering cathode, and the other end coaxially passes through the first flange and is connected to the connecting structure. The guide rod can move relative to the first flange along its own axial direction.

[0008] Furthermore, the adjustable nozzle includes a fixed base, an adjustable aperture mounted on the fixed base, and a drive mechanism disposed between the fixed base and the adjustable aperture. The adjustable aperture has a lever for adjusting the aperture. The drive mechanism is used to drive the lever to rotate, thereby adjusting the aperture of the adjustable aperture. The drive mechanism includes a driven gear and a drive assembly for driving the driven gear. The lever is also used to connect to the driven gear so that the lever rotates relative to the adjustable aperture as the driven gear rotates. An ion funnel is also provided on the side of the adjustable nozzle away from the ion source.

[0009] Furthermore, the beam control mechanism also includes a fifth flange, on which the sputtering device is mounted. The sputtering device has a hollow conical structure with a gradually decreasing outer diameter from near the fifth flange to far away from the fifth flange. When the fifth flange is assembled on the first chamber, the sputtering device is located inside the first chamber and is coaxial with the adjustable nozzle.

[0010] Furthermore, the ion optics introduction device includes at least one set of three-segment electrostatic single lenses and a ring electrode. The end of the three-segment electrostatic single lens near the beam control mechanism is connected to the beam control mechanism, and the ring electrode is located at the end of the three-segment electrostatic single lens away from the beam control mechanism. The three-segment electrostatic single lens and the ring electrode are connected and form a channel through which the cluster beam passes.

[0011] Furthermore, the mass selector includes an inlet, at least two layers of conductive electrode plates, and an outlet. The conductive electrode plates are provided with screening channels for screening the cluster beam, and the conductive electrode plates are stacked. The inlet is located corresponding to the ion optical introduction device, the outlet is located at the end of the mass selector away from the ion optical introduction device, and the ion optical extraction device is located corresponding to the outlet.

[0012] Furthermore, the ion optical extraction lens is connected to a quadrupole and an extraction optical lens, and the deposition mechanism is connected to the end of the quadrupole and the extraction optical lens that is away from the mass selector.

[0013] Furthermore, the substrate mounting structure is mounted on a set of telescopic mechanisms to adjust the vertical height. The telescopic mechanism includes an adjustment seat mounted above the fourth chamber and a telescopic rod disposed within the adjustment seat. The lower end of the telescopic rod extends into the fourth chamber and is connected to the substrate mounting structure.

[0014] Furthermore, the substrate mounting structure includes a sample holder and a sample stage disposed on the sample holder. The sample holder is connected to the lower end of the telescopic rod, and the sample stage is disposed on the side of the sample holder facing the fourth chamber and communicating with the lead-out optical lens and the quadrupole to receive cluster particles.

[0015] The cluster beam device of the present invention has at least the following beneficial effects: the slide rail and sliding structure of the working platform allow the cluster generation, beam control, beam screening, and deposition mechanisms to slide and be positioned flexibly, greatly reducing the difficulty of disassembly and adjustment during assembly and maintenance, reducing damage to components caused by frequent operation, and improving equipment efficiency and adaptability; the angle adjustment mechanism of the cluster generation mechanism, the adjustable nozzle and ion funnel work together, the conical sputterer and gradient electric field design of the beam control mechanism, and the ion optical components and multilayer conductive electrode plate quality selector of the beam screening mechanism together realize cluster beam generation. Precise control, non-scattering separation, and specific quality screening ensure beam stability and concentration. The telescopic adjustment of the deposition mechanism, the cooperation of the fully free-degree-of-freedom robotic arm and magnetic drive rod not only facilitates substrate installation, replacement, and position adjustment, but also adapts to different deposition requirements. Combined with the multi-viewing window design, it improves the convenience and controllability of deposition operations. At the same time, the sealing design of each chamber, insulation protection, and vacuum environment protection structure further enhance the reliability and safety of equipment operation, and comprehensively solve the problems of fixed modules, inconvenient adjustment, complex operation, and insufficient operational stability of existing equipment. Attached Figure Description

[0016] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 This is a schematic diagram of the structure of an embodiment of the cluster beam device of the present invention; Figure 2 This is a cross-sectional structural schematic diagram of an embodiment of the cluster beam device of the present invention; Figure 3 This is a cross-sectional structural schematic diagram of the cluster generation mechanism in one embodiment of the cluster beam device of the present invention; Figure 4 This is a schematic diagram of the differential cavity structure in one embodiment of the cluster beam device of the present invention; Figure 5 This is a schematic diagram of the angle adjustment mechanism in one embodiment of the cluster beam device of the present invention; Figure 6 This is a schematic diagram of the condenser cavity in one embodiment of the cluster beam device of the present invention; Figure 7 This is a schematic diagram of the adjustable nozzle in one embodiment of the cluster beam device of the present invention; Figure 8 This is an exploded view of the adjustable nozzle structure in one embodiment of the cluster beam device of the present invention; Figure 9 This is a schematic cross-sectional view of an adjustable nozzle in one embodiment of the cluster beam device of the present invention; Figure 10 for Figure 2 A partial structural diagram at point A in the middle; Figure 11 for Figure 2 A schematic diagram of the local structure at point B; Figure 12 This is a schematic diagram of the deposition mechanism in one embodiment of the cluster beam device of the present invention.

[0017] The meanings of the labels in the attached diagram are as follows: Work platform 1, base frame 11, flat plate 12, slide rail 13, second slider 14, support rod 15, connecting block 16; Cluster generation mechanism 2, first chamber 21, ion source 22, guide rod 221, sputtering cathode 222, first flange 223, first mounting base 224, bracket 225, first slider 226, bellows 227, differential cavity 23, first connecting part 231, second connecting part 232, third connecting part 233, condensation chamber 24, water inlet pipe 241, water outlet pipe 242, cavity 243, adjustable nozzle 25, fixed base 2501, adjustable aperture 2502, lever 2503, fourth flange 2504, Second mounting base; 2505, Aperture fixing plate; 2506, Mounting hole; 2507, Exposed part; 2508, Groove; 2509, First through hole; 2510, Second through hole; 2511, Driven gear; 2512, Through hole; 2513, Drive shaft; 2514, Main gear; 2515, Transmission gear; 2516, Ion funnel; 26, First annular electrode; 261, Angle adjustment mechanism; 27, Second flange; 271, Third flange; 272, Elastic pipe; 273, Adjusting bolt; 274, Cylinder; 3. Beam control mechanism; 31. Fifth flange; 32. Sputter; 33. Insulating plate; Beam selection mechanism 4, second chamber 41, third chamber 42, ion optical introduction device 43, electrostatic single lens 431, second ring electrode 432, mass selector 44, ion optical extraction device 45, quadrupole 46, extraction optical lens 47. Deposition mechanism 5, fourth chamber 501, molecular pump 502, evaporation source 503, fully free manipulator 504, magnetic drive rod 505, adjustment seat 506, telescopic rod 507, sample holder 508, sample stage 509, receiving platform 510, observation window 511. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0019] The following disclosure provides various embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements will be described below to simplify the invention. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component above or on a second component may include embodiments where the first and second components are in direct contact, or embodiments where other components may be formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or characters may be repeated in various instances of the invention. Such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations.

[0020] Furthermore, spatial relation terms such as "below," "under," "below," "above," and "above" may be used herein to readily describe the relationship between one element or component and another element (or component) or component (or component) as shown in the figure. In addition to the orientations shown in the figure, spatial relation terms will encompass various different orientations of the device in use or operation. The device may be positioned in other ways (rotated 90 degrees or in other orientations) and will be interpreted accordingly through the spatial relation descriptors used herein.

[0021] Furthermore, the technical parts described in this invention and the appended claims are primarily the improved technical parts of this invention, and do not limit the object protected by this invention to only having these technical parts. Other known essential components (structures and / or methods) and / or non-essential components of the object protected, besides the technical parts described in this invention and the appended claims, are not included in this invention and the appended claims because they do not fall within the scope of improvements of this invention; however, this does not mean that the object protected by this invention does not possess these known components.

[0022] The invention will now be further described with reference to the accompanying drawings.

[0023] Please refer to Figure 1 and Figure 2The cluster beam device of the present invention includes a working platform 1, a cluster generation mechanism 2, a beam control mechanism 3, a beam screening mechanism 4, and a deposition mechanism 5 connected sequentially on the working platform 1. The working platform 1 includes a base frame 11, a plate 12 disposed on the top of the base frame 11, a slide rail 13 disposed on the plate 12, and a plurality of sliding structures. The plurality of sliding structures are respectively disposed corresponding to the cluster generation mechanism 2, the beam control mechanism 3, the beam screening mechanism 4, and the deposition mechanism 5. Each sliding structure is slidably connected to the slide rail 13.

[0024] Please refer to Figure 3 The cluster generation mechanism 2 includes a first chamber 21, an ion source 22 and a differential chamber 23 disposed at one end of the first chamber 21, a condensation chamber 24 disposed within the first chamber 21, an adjustable nozzle 25, and an ion funnel 26. The ion source 22 is connected to the first chamber 21 through the differential chamber 23. One end of the condensation chamber 24 is connected to the first chamber 21 through an angle adjustment mechanism 27. The adjustable nozzle 25 is sealed at the other end of the condensation chamber 24. The atomic vapor generated by the ion source 22 is cooled by the condensation chamber 24 and then enters the ion funnel 26 through the adjustable nozzle 25 before being injected into the beam control mechanism 3.

[0025] The ion source 22 includes a guide rod 221, a sputtering cathode 222, a connecting structure, and a first flange 223 for connecting the guide rod 221 to the differential cavity 23. The connecting structure includes a first mounting base 224, a bracket 225, and a first slider 226. The bracket 225 is vertically disposed at one end of the first mounting base 224, and the first flange 223 is disposed at the upper end of the bracket 225. The first slider 226 is slidably disposed on the first mounting base 224 along the length direction of the guide rod 221. The guide rod 221 is horizontally mounted in the middle of the first flange 223 and can slide relative to the first flange 223 along its own length direction. One end of the guide rod 221 extends to be fixedly connected to the first slider 226, thereby sliding with the sliding of the first slider 226, and the other end of the guide rod 221 is connected to the sputtering cathode 222. A bellows 227, which covers the guide rod 221, is provided between the first flange 223 and the sputtering cathode 222. When the guide rod 221 slides relative to the first flange 223, the bellows 227 is stretched or contracted accordingly, thereby ensuring the isolation of the sputtering cathode 222 from the space outside the first chamber 21. The guide rod 221 is hollow to allow the passage of wires connected to the sputtering cathode 222.

[0026] Please refer to Figure 4The differential cavity 23 has a first connecting portion 231 for connecting to the first chamber 21, a second connecting portion 232 disposed on the first connecting portion 231, and a third connecting portion 233. The second connecting portion 232 is a hollow cylindrical shape, and a cavity 243 in its middle extends through the first connecting portion 231. The second connecting portion 232 is used for connecting a first flange 223 thereto. When the differential cavity 23 is connected to the first chamber 21, the guide rod 221 and the bellows 227 extend into the first chamber 21 through the cavity 243 in the middle of the second connecting portion 232. The third connecting portion 233 is used to connect a delivery pipe for supplying cooling medium to the condensation chamber 24.

[0027] Please refer to Figure 5 The angle adjustment mechanism 27 includes a second flange 271, a third flange 272, and an elastic pipe 273 disposed between the second flange 271 and the third flange 272. The second flange 271 is connected to the inner wall of the first chamber 21 near the differential chamber 23, and the third flange 272 is connected to the condensation chamber 24. The condensation chamber 24 and the elastic pipe 273 are both sleeved on the outside of the guide rod 221 and the bellows 227. A plurality of evenly arranged adjusting members are provided between the second flange 271 and the third flange 272. By adjusting the adjusting members, one side of the elastic pipe 273 can be compressed, causing the angle adjustment mechanism 27 to deflect and drive the condensation chamber 24 to rotate.

[0028] The adjusting components include an adjusting bolt 274 and a cylinder 275 threadedly matched with the adjusting bolt 274. The adjusting bolt 274 is rotatably mounted on the second flange 271, and the central axis of the adjusting bolt 274 is parallel to the central axis of the second flange 271. The end of the adjusting bolt 274 extends towards the third flange 272, and an adjusting hole is provided at a corresponding position on the third flange 272 for the adjusting bolt 274 to pass through. The inner diameter of the adjusting hole is larger than the outer diameter of the adjusting bolt 274 to allow for movement of the adjusting bolt 274. The cylinder 275 is screwed onto the outer circumference of the adjusting bolt 274 and is rotatably connected to the side of the third flange 272 facing the second flange 271. Several sets of the adjusting components are arranged evenly spaced in a circular pattern around the central axis of the second flange 271. By adjusting different adjusting components, the effect of compressing one side of the elastic pipe 273 can be achieved.

[0029] Please refer to Figure 6The condensing chamber 24 is a cylindrical structure open at both ends and arranged around the sputtering cathode 222. One end of the condensing chamber 24 is connected to the third flange 272. The sputtering cathode 222 and part of the bellows 227 are located inside the condensing chamber 24. The condensing chamber 24 includes an inner wall, an outer wall, an inlet pipe 241, and an outlet pipe 242. A cavity 243 is formed between the inner wall and the outer wall. The inlet pipe 241 and the outlet pipe 242 are both connected to the cavity 243 to receive and discharge refrigerant. There are two third connecting parts 233. The other ends of the inlet pipe 241 and the outlet pipe 242 are respectively connected to the two third connecting parts 233. The third connecting parts 233 are externally connected to equipment for conveying the cooling medium (not shown in the figure).

[0030] Please refer to Figure 7 , Figure 8 and Figure 9 The adjustable nozzle 25 is disposed on the side of the condensation chamber 24 away from the angle adjustment mechanism 27 and closes the condensation chamber 24. The adjustable nozzle 25 includes a fixed base 2501, an adjustable aperture 2502 mounted on the fixed base 2501, and a drive mechanism disposed between the fixed base 2501 and the adjustable aperture 2502. The adjustable aperture 2502 has a lever 2503 for adjusting the aperture, and the drive mechanism is used to drive the lever 2503 to rotate, thereby adjusting the aperture of the adjustable aperture 2502. The adjustable aperture 2502 is detachably connected to the fixed base 2501 via a set of connecting mechanisms.

[0031] The connecting mechanism includes a fourth flange 2504, a second mounting base 2505, and an aperture fixing plate 2506. The fixing base 2501 has a mounting hole 2507 for assembling the connecting mechanism, the mounting hole 2507 extending through the fixing base 2501 along its thickness direction. The mounting hole 2507 has a first hole and a second hole coaxially arranged, the inner diameter of the first hole being smaller than the inner diameter of the second hole to form a stepped surface between them, the stepped surface serving to axially limit the second mounting base 2505.

[0032] The outer diameter of the second mounting base 2505 matches the mounting hole 2507 so that it can be engaged within the mounting hole 2507. Both axial sides of the second mounting base 2505 are exposed outside the mounting hole 2507. The aperture fixing plate 2506 is coaxially and detachably disposed on the side of the second mounting base 2505 exposed outside the first hole. In this embodiment, the aperture fixing plate 2506 and the second mounting base 2505 share a first fixing hole. A first fixing bolt (not shown in the figure) is disposed in the first fixing hole to connect the second mounting base 2505 and the aperture fixing plate 2506. The first fixing hole has several holes evenly spaced around the axis of the second mounting base 2505 and the aperture fixing plate 2506, and there are also several first fixing bolts that match each other. The side of the aperture fixing plate 2506 away from the second mounting base 2505 has an exposed portion 2508 exposed outside the first hole. The exposed portion 2508 is arc-shaped. The adjustable aperture 2502 is engaged within the inner circumference of the exposed portion 2508, and the lever 2503 extends radially from the arc-shaped notch of the exposed portion 2508.

[0033] The fourth flange 2504 is detachably disposed on the side of the second mounting base 2505 away from the aperture mounting plate. A groove 2509 is formed on the side of the fourth flange 2504 facing the second mounting base 2505. The inner diameter of the groove 2509 matches the outer diameter of the second mounting base 2505 to allow the second mounting base 2505 to be accommodated. A sealing groove is formed on the side of the second mounting base 2505 facing the fourth flange 2504. A sealing ring is disposed within the sealing groove. The second mounting base 2505 and the fourth flange 2504 can press the sealing ring together from both sides to increase the sealing performance between them. A second fixing hole is formed between the second mounting base 2505 and the fourth flange 2504. A second fixing bolt (not shown in the figure) is disposed within the second fixing hole to connect the second mounting base 2505 and the fourth flange 2504. The second fixing hole has several holes evenly spaced around the axis of the second mounting base 2505 and the aperture fixing plate 2506, and the second fixing bolt also has several matching bolts. A third fixing hole is provided between the fourth flange 2504 and the fixing base 2501, and a third fixing bolt (not shown in the figure) is provided in the third fixing hole to connect the fourth flange 2504 and the fixing base 2501. When the fourth flange 2504 is connected to the fixing base 2501, the second mounting base 2505 and the aperture fixing plate 2506 can be fixed to the fixing base 2501. The fourth flange 2504 is also used to connect and seal the end of the condensation chamber 24 away from the angle adjustment mechanism 27.

[0034] A first through hole 2510 is formed at the center of the fourth flange 2504, penetrating the fourth flange 2504. The inner diameter of the first through hole 2510 gradually decreases from the distance from the second mounting base 2505 to the distance from the second mounting base 2505, forming a frustum-shaped hole. A second through hole 2511 is formed at the center of the second mounting base 2505, penetrating the second mounting base 2505. The inner diameter of the second through hole 2511 gradually decreases from the distance from the fourth flange 2504 to the distance from the fourth flange 2504, forming a frustum-shaped hole. The maximum inner diameter of the second through hole 2511 matches the minimum inner diameter of the first through hole 2510 for mutual connection and matching. The first through hole 2510 and the second through hole 2511 allow the cluster beam to pass through, and after passing through, the cluster beam exits through the hole in the middle of the adjustable aperture 2502 to achieve the jetting of the cluster beam. Such a frustum-shaped aperture can guide the cluster beam. When the cluster beam passes through, the scattered beams will collide with the conical structure, while the highly concentrated beams will pass through the circular aperture of the aperture, thus filtering out the highly concentrated beams and improving the sputtering quality.

[0035] The drive mechanism includes a driven gear 2512 and a drive assembly for driving the driven gear 2512. A transmission shaft 2514 is rotatably fitted around the outer periphery of the exposed portion 2508. The driven gear 2512 has a radially extending through hole 2513, into which the lever 2503 is inserted. The drive assembly includes a transmission shaft 2514 and a main gear 2515. The transmission shaft 2514 is rotatably mounted on the fixed base 2501, with both ends extending outwards. One end of the transmission shaft 2514 is connected to an external power source, and the other end is fixedly connected to the main gear 2515. The main gear 2515 is rotatably connected to the fixed base 2501, and the main gear 2515 meshes with the driven gear 2512, or the main gear 2515 meshes with the driven gear 2512 via a transmission gear 2516. In this embodiment, a transmission gear 2516 is provided on the fixed base 2501 at a position corresponding to the position between the main gear 2515 and the driven gear 2512, and there are several transmission gears 2516.

[0036] Please refer to Figure 10The ion funnel 26 is disposed on the side of the adjustable nozzle 25 away from the condensation chamber 24 to receive particles ejected by the adjustable nozzle 25. The ion funnel 26 includes a DC power supply and N first annular electrodes 261. The N first annular electrodes 261 are stacked concentrically from the inside out, forming a planar structure. Each first annular electrode 261 has the same wall thickness, and the radius of the N first annular electrodes 261 gradually increases from the inside out, forming concentric circles. Each first annular electrode 261 is spaced at the same distance. The DC power supply applies a DC voltage with a constant gradient to each first annular electrode 261 from the inside out. According to the focusing principle, the gradient voltage of the different concentric first annular electrodes 261 creates a potential gradient field from the outside in and from high to low on the same plane. Therefore, a large number of particles will be rapidly and strongly focused within the same plane.

[0037] The beam control mechanism 3 is used to separate a non-scattering beam and includes a fifth flange 31 sealed to the end of the first chamber 21 and a sputterer 32 mounted on the fifth flange 31. The sputterer 32 has a hollow conical structure with a gradually decreasing outer diameter from near the fifth flange 31 to far away from the fifth flange 31. When the fifth flange 31 is assembled on the first chamber 21, the sputterer 32 is located inside the first chamber 21 and is coaxial with the adjustable nozzle 25.

[0038] The sputterer 32 employs a negative voltage design, forming a gradient electric field with the fifth flange 31. The negative voltage and the surrounding electric field create a potential barrier, allowing only ions with energy higher than the barrier to pass through. This more effectively filters ions with specific energies, improving separation resolution. The negative voltage and the surrounding electric field work together to create a focusing effect on the ion beam, accelerating or decelerating ions in the negative voltage field and guiding them along an optimized path, reducing scattering and energy loss. The conical structure of the sputterer 32 reduces interference from stray ions. The geometry of its internal conical cavity ensures a more uniform electric field distribution when the ion beam enters from the tip, creating a natural focusing effect and significantly improving ion manipulation precision. An insulating plate 33 is connected to the upper end of the fifth flange 31, and the sputterer 32 is located inside the insulating plate 33. A gasket is also installed inside the insulating plate 33. The use of a gasket in conjunction with the insulating plate 33 ensures the vacuum sealing performance of the equipment, preventing gas leakage and external contamination, and meeting the stringent requirements of high-precision experiments.

[0039] The beam filtering mechanism 4 is used to transport and filter the cluster beam output by the cluster generation mechanism 2. It includes an ion optical introduction device 43, a quality selector 44, and an ion optical extraction device 45 connected in sequence. The cluster beam generated by the cluster generation mechanism 2 enters the quality selector 44 through the ion optical introduction device 43, and then enters the deposition mechanism 5 through the ion optical extraction device 45. It also includes a second chamber 41 surrounding the ion optical introduction device 43, and a third chamber 42 surrounding the quality selector 44 and the ion optical extraction device 45.

[0040] One end of the second chamber 41 is connected to the fifth flange 31, and the other end is connected to the third chamber 42. The ion optics introduction device 43 is located within the second chamber 41. The ion optics introduction device 43 includes at least one set of three-segment electrostatic single lenses 431 and a second annular electrode 432. The second annular electrode 432 is located at the end of the three-segment electrostatic single lens 431 furthest from the beam control mechanism 3. The three-segment electrostatic single lens 431 and the second annular electrode 432 are connected and form a channel through which the cluster beam passes. The second annular electrode 432 is led out from the end of the ion optics introduction device 43 and subjected to the same steady-state voltage as the mass selector 44, here -500V, to reduce the impact on the beam caused by electric field changes when transitioning from ion optics to mass selection.

[0041] The specific ion optical introduction device 43 achieves focusing or divergence through combinations of different voltages (the higher the degree of focusing, the easier it is to pass through screening, i.e., the smaller the degree of divergence, the better), resulting in a higher degree of focusing of cluster ions and better screening at the subsequent transverse TOF gaps. It includes two sets of three-segment electrostatic single lenses 431 and a second annular electrode 432. Each electrostatic single lens 431 is provided with an insulating structure to fix it, and each electrostatic single lens 431 is subjected to a different voltage. The voltage at both ends is the same, and the voltage in the middle is higher or lower than the voltage at both ends, so that the more lens segments and the more combinations of applied voltages, the more focusing and diverging processes there are, and the stronger the control capability. Each electrostatic single lens 431 is fixedly connected by a ceramic structure. The second annular electrode 432, which leads out at the end, is different from the electrostatic single lens 431 in that it has a side wall and a hole on the side wall at the rear end.

[0042] The mass selector 44 is composed of five layers of vertically stacked conductive electrode plates, all of which are subjected to a normal -500V voltage to maintain internal uniformity. The first and fifth electrodes are subjected to pulsed voltage waveforms of different phases from -500V to 0V. The exit of the mass selector 44 is a slit, allowing only the majority of the selected mass beam to pass through, thus achieving the function of mass screening. Each pair of stacked conductive electrodes is fixedly connected by an insulating structure; a potential difference is formed between the top or bottom layer and the adjacent electrode plate, causing the cluster beam to receive an upward or downward force for vertical movement; the middle three layers are subjected to the same voltage, forming a voltage-stabilized region with no electric field during flight. Theoretically, there can be multiple layers in the middle; this embodiment uses one layer as an example. The bottom layer provides an upward force, and the top layer provides a downward force, counteracting the upward force, ultimately causing the cluster beam to fly horizontally. A pulsed voltage is applied to the side plate of the middle layer, screening ions that have completed a full pulse cycle and discarding ions that have not. Cluster ions of different masses have different flight velocities in the mass selector 44, thus enabling the selection of cluster ions with specific mass targets. The mass selector 44 also includes an inlet and an outlet. The conductive electrode plate is provided with a screening channel for screening the cluster beam. The inlet is located corresponding to the ion optical introduction device 43, and the outlet is located at the end of the mass selector 44 away from the ion optical introduction device 43.

[0043] Please refer to Figure 11 The ion optical extraction device 45 employs a structure comprising a set of three-segment annular electrode single lenses arranged sequentially along the same central axis. The three-segment annular electrode single lens comprises three hollow third annular electrodes arranged sequentially along the same central axis. The first section of the third annular electrode is applied with the same -500V voltage as the mass selector 44 to reduce the influence of particle beam transition. The second and third sections are applied with -2000V and -500V voltages respectively to form a focusing electric field, controlling the beam spot size at the deposition position, with the same structure as the electrostatic single lens 431 in the ion optical introduction device 43. The focusing degree of the area deposited on the substrate is adjusted by the ion optical extraction device 45. There are two outlets, each connected to a set of ion optical extraction devices 45. Each set of ion optical extraction devices 45 is connected to a quadrupole 46 and an extraction optical lens 47. The ends of the quadrupole 46 and the extraction optical lens 47 furthest from the mass selector 44 are connected to the deposition mechanism 5.

[0044] Please refer to Figure 12The deposition mechanism 5 includes a fourth chamber 501, a substrate mounting structure disposed within the fourth chamber 501, a molecular pump 502 for evacuating the interior of the fourth chamber 501, and an evaporation source 503 disposed on the side wall of the fourth chamber 501. The fourth chamber 501 is slidably connected to the slide rail 13 via the sliding structure. The substrate mounting structure is mounted on a set of telescopic mechanisms to adjust its vertical height. It also includes a fully free-degree-of-freedom manipulator 504 and a magnetic drive rod 505. The fully free-degree-of-freedom manipulator 504 and the magnetic drive rod 505 are used to cooperate in mounting the substrate in the substrate mounting structure and adjusting its position.

[0045] One side of the fourth chamber 501 is connected to an optical lens 47 and a quadrupole 46. The optical lens 47 and the quadrupole 46 are arranged vertically, and the connection points between the optical lens 47, the quadrupole 46, and the fourth chamber 501 are located on the same vertical axis. There are two evaporation sources 503, each corresponding to the connection point between the optical lens 47 and the quadrupole 46 and the fourth chamber 501. Specifically, the two evaporation sources 503 are located on one side of the fourth chamber 501 and extend into it. The two evaporation sources 503 are respectively positioned corresponding to the two connecting points. That is, the central axis of the connecting point between the lead-out optical lens 47 and the fourth chamber 501 intersects with the central axis of the corresponding evaporation source 503, and the central axis of the connecting point between the quadrupole 46 and the fourth chamber 501 intersects with the central axis of the corresponding evaporation source 503. The evaporation sources 503 heat the target material to above its boiling point or sublimation temperature through resistance heating or electron beam bombardment, thereby generating a high-purity gaseous atomic or ion stream. The molecular pump 502 is provided at the bottom of the fourth chamber 501 to evacuate the interior of the fourth chamber 501.

[0046] A telescopic mechanism is provided on the fourth chamber 501. The telescopic mechanism includes an adjustment seat 506 mounted above the fourth chamber 501 and a telescopic rod 507 disposed within the adjustment seat 506. The lower end of the telescopic rod 507 extends into the fourth chamber 501 and is connected to the substrate mounting structure. The telescopic rod 507 can be a hydraulic rod or other existing devices capable of achieving a telescopic effect. The substrate mounting structure is disposed at the lower end of the telescopic rod 507 and can change its vertical height as the telescopic rod 507 extends or retracts.

[0047] The substrate mounting structure includes a sample holder 508, sample stages 509 disposed on the sample holder 508, and a receiving platform 510 disposed on the sample holder 508. The sample holder 508 is connected to the lower end of the telescopic rod 507. Several sample stages 509 are provided, all disposed on the same side of the sample holder 508, specifically on the side of the sample holder 508 facing the communication port. The receiving platform 510 is disposed on the sample holder 508 at the same side as the sample stages 509, and is located below the sample stages 509. In this embodiment, both the sample stages 509 and the receiving platform 510 have slots for mounting the substrate. During deposition, the telescopic rod 507 is adjusted to change the height of the substrate mounting structure, so that the substrate on the receiving platform 510 is positioned to receive the target material. The target material ejected from the communication port, after being processed by the evaporation source 503, can be deposited on the substrate. Furthermore, a cooling cavity (not shown in the figure) is provided on the sample holder 508 at a position corresponding to the receiving stage 510 to cool the substrate on the receiving stage 510.

[0048] The magnetic drive rod 505 is horizontally inserted through the side wall of the fourth chamber 501, specifically above the two evaporation sources 503. A horizontal short tube is installed on the side wall of the fourth chamber 501, one end of which communicates with the outside and the other end with the inside of the fourth chamber 501. The short tube is used to insert the magnetic drive rod 505, which slides within the short tube and is slidably and sealingly connected to the opening between the short tube and the outside, thus ensuring that the movement of the magnetic drive rod 505 does not disrupt the vacuum environment inside the fourth chamber 501.

[0049] The fully free-degree-of-freedom manipulator 504 for gripping the substrate is inserted through the side wall of the fourth chamber 501, and the axes of the fully free-degree-of-freedom manipulator 504 and the magnetic drive rod 505 are located on the same horizontal plane to cooperate in adjusting the position of the substrate. Specifically, after the substrate deposition on the receiving stage 510 is completed, the magnetic drive rod 505 and the fully free-degree-of-freedom manipulator 504 cooperate to remove the substrate, and remove an undeposited substrate from the sample stage 509 and place it into the receiving stage 510 for a new round of deposition.

[0050] The fourth chamber 501 is also provided with a plurality of observation windows 511. The number of observation windows 511 is configured to be multiple, for observing the deposition process of the cluster beam drawn out by the quadrupole or the lead-out optical lens from different angles and positions.

[0051] Each set of sliding structures includes a second slider 14, a support rod 15, and a connecting block 16. The second slider 14 is slidably connected to the slide rail 13. The support rod 15 is disposed at the upper end of the second slider 14. The connecting block 16 is disposed at the upper end of the support rod 15. The connecting block 16 is used to connect with the first mounting base 224, the first chamber 21, the second chamber 41, and the third chamber 42.

[0052] Compared with existing technologies, the cluster beam device of this invention features a sliding platform with a sliding structure that allows for flexible sliding and positioning of the cluster generation, beam control, beam screening, and deposition mechanisms. This significantly reduces the difficulty of disassembly and adjustment during assembly and maintenance, minimizes damage to components caused by frequent operation, and improves equipment efficiency and adaptability. The angle adjustment mechanism of the cluster generation mechanism, the adjustable nozzle working in conjunction with the ion funnel, the conical sputtering device and gradient electric field design of the beam control mechanism, and the ion optics components and multilayer conductive electrode plate quality selector of the beam screening mechanism all contribute to achieving precise cluster beam control. Quasi-control, non-scattering separation, and specific quality screening ensure beam stability and concentration. The telescopic adjustment of the deposition mechanism, the cooperation of a fully free manipulator and magnetic drive rod, not only facilitates substrate installation, replacement, and position adjustment, but also adapts to different deposition requirements. Combined with a multi-viewing window design, it enhances the convenience and controllability of deposition operations. At the same time, the sealing design of each chamber, insulation protection, and vacuum environment protection structure further enhance the reliability and safety of equipment operation, comprehensively solving the problems of fixed modules, inconvenient adjustment, complex operation, and insufficient operational stability of existing equipment.

[0053] The above embodiments merely illustrate preferred implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention should be determined by the appended claims.

Claims

1. A cluster beam apparatus for generating, screening, and depositing clusters, characterized in that: include: A cluster generation mechanism includes an ion source, a condensation chamber at least partially arranged around the outer periphery of the ion source, and an adjustable nozzle. The adjustable nozzle is disposed at the end of the condensation chamber corresponding to the cluster ejection end, and the end of the condensation chamber corresponding to the cluster injection end is connected to an angle adjustment mechanism to adjust the angle of the condensation chamber. A beam control mechanism for separating a non-scattering beam includes a sputterer, which is installed at the cluster emission end of the cluster generation mechanism; A beam filtering mechanism is connected to the side of the beam control mechanism away from the cluster generation mechanism. It includes an ion optical introduction device, a mass selector, and an ion optical extraction device connected in sequence. The cluster beam is emitted from the beam control mechanism, enters the mass selector through the ion optical introduction device, and is then emitted through the ion optical extraction device. The deposition mechanism includes a fourth chamber, a substrate mounting structure disposed within the fourth chamber, a molecular pump for evacuating the interior of the fourth chamber, and an evaporation source disposed on the side wall of the fourth chamber. It also includes a fully free-degree-of-freedom manipulator and a magnetic drive rod, wherein the fully free-degree-of-freedom manipulator and the magnetic drive rod are used to cooperate to mount the substrate in the substrate mounting structure and adjust its position.

2. The cluster beam device as described in claim 1, characterized in that: The cluster generation mechanism further includes a first chamber, one end of the ion source extends into the first chamber and is connected to the first chamber through a differential chamber, the condensation chamber is disposed in the first chamber and surrounds the section of the ion source extending into the first chamber, the condensation chamber is connected to the differential chamber through the angle adjustment mechanism, and the sputterer is installed at the end of the first chamber away from the ion source.

3. The cluster beam device as described in claim 2, characterized in that: The ion source includes a guide rod, a sputtering cathode, a connecting structure, and a first flange for connecting the guide rod to the differential cavity. One end of the guide rod near the differential cavity is connected to the sputtering cathode, and the other end is coaxially inserted through the first flange and connected to the connecting structure. The guide rod can move relative to the first flange along its own axial direction.

4. The cluster beam device as described in claim 1, characterized in that: The adjustable nozzle includes a fixed base, an adjustable aperture mounted on the fixed base, and a drive mechanism disposed between the fixed base and the adjustable aperture. The adjustable aperture has a lever for adjusting the aperture. The drive mechanism is used to drive the lever to rotate, thereby adjusting the aperture of the adjustable aperture. The drive mechanism includes a driven gear and a drive assembly for driving the driven gear. The lever is also used to connect to the driven gear so that the lever rotates relative to the adjustable aperture as the driven gear rotates. An ion funnel is also provided on the side of the adjustable nozzle away from the ion source.

5. The cluster beam device as described in claim 2, characterized in that: The beam control mechanism also includes a fifth flange, on which the sputtering device is mounted. The sputtering device has a hollow conical structure with a gradually decreasing outer diameter from near the fifth flange to far away from the fifth flange. When the fifth flange is assembled on the first chamber, the sputtering device is located in the first chamber and is coaxial with the adjustable nozzle.

6. The cluster beam device as described in claim 1, characterized in that: The ion optics introduction device includes at least one set of three-segment electrostatic single lenses and a ring electrode. The end of the three-segment electrostatic single lens closest to the beam control mechanism is connected to the beam control mechanism. The ring electrode is located at the end of the three-segment electrostatic single lens furthest from the beam control mechanism. The three-segment electrostatic single lens and the ring electrode are connected and form a channel through which the cluster beam passes.

7. The cluster beam device as described in claim 1, characterized in that: The mass selector includes an inlet, at least two layers of conductive electrode plates, and an outlet. The conductive electrode plates are provided with screening channels for screening the cluster beam, and the conductive electrode plates are stacked. The inlet is located corresponding to the ion optical introduction device, the outlet is located at the end of the mass selector away from the ion optical introduction device, and the ion optical extraction device is located corresponding to the outlet.

8. The cluster beam device as described in claim 7, characterized in that: The ion optical extraction lens is connected to a quadrupole and an extraction optical lens. The deposition mechanism is connected to the end of the quadrupole and the extraction optical lens that is away from the mass selector.

9. The cluster beam device as described in claim 8, characterized in that: The substrate mounting structure is mounted on a set of telescopic mechanisms to adjust the vertical height. The telescopic mechanism includes an adjustment seat mounted above the fourth chamber and a telescopic rod disposed in the adjustment seat. The lower end of the telescopic rod extends into the fourth chamber and is connected to the substrate mounting structure.

10. The cluster beam device as described in claim 9, characterized in that: The substrate mounting structure includes a sample holder and a sample stage disposed on the sample holder. The sample holder is connected to the lower end of the telescopic rod, and the sample stage is disposed on the side of the sample holder facing the fourth chamber and communicating with the lead-out optical lens and the quadrupole to receive cluster particles.

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