Adsorption type bearing disc of semiconductor equipment

Abstract

The invention relates to an adsorption type bearing disc of semiconductor equipment. A first surface of the adsorption type bearing disc is used for bearing and adsorbing a wafer or a bearing substrate. The adsorption type bearing disc comprises a main body, a plurality of first connecting holes, a plurality of second connecting holes and at least one buffering space, the first connecting holes are connected with the first surface of the main body, the second connecting holes are connected with the second surface of the main body, and the buffering space is located in the main body part. The first connecting hole is connected with the second connecting hole through the buffer space, and the sectional area of the buffer space is larger than the aperture of the first connecting hole and the second connecting hole. The buffer space can be used for blocking liquid entering from the second connecting hole and preventing the liquid from being transmitted to the first connecting hole from the second connecting hole so as to avoid polluting a wafer placed on the first surface of the adsorption type bearing disc.

Description

Technical Field

[0001] This invention relates to an adsorption carrier tray for semiconductor equipment, suitable for bonding and debonding machines for wafers and carrier substrates, which can prevent liquid contamination of the wafers or carrier substrates placed on the adsorption carrier tray. Background Technology

[0002] With advancements in semiconductor technology, electronic products are increasingly trending towards thinner, smaller, higher-performance, more reliable, and smarter designs. Chips within electronic products significantly impact their performance; for example, thinner chips can improve heat dissipation efficiency, enhance mechanical properties, reduce on-resistance, decrease power consumption, and reduce package size and weight.

[0003] Therefore, during the chip manufacturing process, wafers are typically thinned by grinding to reduce chip thickness, lower on-resistance, reduce power consumption, increase processing speed, and extend lifespan. However, thinned wafers are very fragile and prone to warping or breakage in subsequent processes, thus reducing product yield.

[0004] To avoid the aforementioned problems, wafers are typically bonded to a carrier substrate, which supports the thinned wafers to prevent warping or breakage during the process.

[0005] Specifically, an adhesive can be coated on the surfaces of the carrier substrate and the wafer. The carrier substrate and wafer are then moved to a bonding machine for alignment, and the laminated wafer and carrier substrate are bonded together using the bonding unit and stage of the bonding machine to complete the bonding of the wafer and carrier substrate. After bonding, the wafer can undergo a grinding process, and then the wafer and carrier substrate can be debonded and separated.

[0006] During the debonding process, chemical solvents may be used to assist in separating the wafer from the substrate. After debonding, chemical solvents are used to remove any remaining colloid on the wafer surface. If these organic solvents are transferred to the back side of the wafer, they will contaminate the back metal on the wafer, thereby affecting the yield and reliability of subsequent wafer fabrication. Summary of the Invention

[0007] To address the problems faced by existing technologies, this invention proposes an adsorption-type carrier pad for semiconductor equipment, particularly suitable for bonding and debonding machines for wafers and substrates. The adsorption-type carrier pad described in this invention is mainly used to adsorb and fix the wafer or substrate, and can avoid the contact and contamination of the back metal on the wafer by organic solvents used during cleaning, thereby improving the yield and reliability of subsequent wafer fabrication.

[0008] To achieve the above objectives, the present invention provides an adsorption-type carrier disk for a semiconductor device, comprising: a main body including a first surface and a second surface, wherein the first surface is used to support a wafer or a carrier substrate; a plurality of first connection holes connecting to the first surface of the main body and forming a plurality of first openings on the first surface of the main body; a plurality of second connection holes connecting to the second surface of the main body and forming a plurality of second openings on the second surface of the main body; and at least one buffer space located inside the main body, wherein the plurality of first connection holes are connected to the plurality of second connection holes through the buffer space, and the cross-sectional area of ​​the buffer space is larger than the apertures of the plurality of first connection holes and the plurality of second connection holes.

[0009] In at least one embodiment of the adsorption-type support plate, the first connection hole includes a first connection port for connecting to the buffer space, and the second connection hole includes a second connection port for connecting to the buffer space.

[0010] In at least one embodiment of the adsorption-type carrier plate, the first connection port of the first connection hole does not directly face the second connection port of the second connection hole.

[0011] In at least one embodiment of the adsorption-type carrier plate, the first connection port of the first connection hole and the second connection port of the second connection hole have a distance between them in a direction parallel to the first surface of the body.

[0012] In at least one embodiment of the adsorption-type support plate, the volume of the buffer space is greater than the volume of the plurality of first connecting holes and the plurality of second connecting holes.

[0013] In at least one embodiment of the adsorption-type support plate, the main body includes a first plate and a second plate, a plurality of first connecting holes are located in the first plate, and a plurality of second connecting holes and a buffer space are located in the second plate.

[0014] In at least one embodiment of the adsorption-type support plate, a first plate and a second plate are stacked, and a plurality of first connection holes on the first plate are connected to a buffer space on the second plate.

[0015] In at least one embodiment of the adsorption-type support plate, the buffer space of the second plate body is a buffer channel, and the first connection hole is connected to the second connection hole through the buffer channel.

[0016] In at least one embodiment of the adsorption-type carrier plate, a plurality of first connection holes on the first plate body are arranged along the buffer space of the second plate body.

[0017] In at least one embodiment of the adsorption-type carrier plate, the plurality of first connection holes are not aligned with the plurality of second connection holes.

[0018] The beneficial effects of this invention: This invention proposes an adsorption-type carrier plate for semiconductor devices, mainly comprising a main body, multiple first connection holes, multiple second connection holes, and multiple buffer spaces. The first and second connection holes are respectively connected to the first and second surfaces of the main body, while the buffer spaces are located inside the main body. The first and second connection holes are connected through the buffer spaces, wherein the second connection holes can evacuate air from the first connection holes through the buffer spaces, creating a negative pressure on the first connection holes to fix the wafer or carrier substrate onto the adsorption-type carrier plate.

[0019] When the second connection hole stops pumping air, the wafer can be removed from the suction-type carrier. The buffer space prevents liquid outside the suction-type carrier from being transported from the second connection hole to the first connection hole during the process of stopping pumping air, thus avoiding contamination of the back metal on the wafer and improving the yield and reliability of subsequent wafer fabrication.

[0020] This invention proposes an adsorption-type carrier for semiconductor devices, mainly comprising a main body, multiple first connection holes, multiple second connection holes, and multiple buffer spaces. The first and second connection holes respectively connect to the first and second surfaces of the main body, while the buffer spaces are located inside the main body. The first and second connection holes connect to the buffer spaces, forming a first connection port and a second connection port on the buffer spaces. The first connection port in the buffer space does not directly face the second connection port; a gap is formed between the first and second connection ports, so that liquid entering the buffer space from the second connection hole is not directly delivered to the first connection port, thereby preventing liquid from being transferred to the back side of the wafer. Attached Figure Description

[0021] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the adsorption-type carrier plate of the semiconductor device of the present invention.

[0022] Figure 2 This is an enlarged cross-sectional view of an embodiment of the adsorption-type carrier plate of the semiconductor device of the present invention.

[0023] Figure 3 This is a schematic diagram showing the usage state of an embodiment of the adsorption-type carrier plate of the semiconductor device of the present invention.

[0024] Figure 4 This is an exploded view of an embodiment of the adsorption-type carrier disk of the semiconductor device of the present invention.

[0025] Figure 5 This is a top view of an embodiment of the first disk body of the adsorption-type carrier disk of the semiconductor device of the present invention.

[0026] Figure 6 This is a top view of an embodiment of the second disk of the adsorption-type carrier disk of the semiconductor device of the present invention.

[0027] Figure 7 This is a top perspective view of an embodiment of the adsorption carrier plate of the semiconductor device of the present invention.

[0028] Explanation of reference numerals in the attached figures: 10: Adsorption type support plate 11: Main Body 111: First plate 112: First Surface 113: Second plate 114: Second Surface 12: Third connecting hole 13: First connecting hole 131: First Opening 133: First connection port 15: Second connecting hole 151: Second opening 153: Second connection port 17: Buffer space 19: Buffer Channel 191: First Circular Channel 193: Second annular channel 195: Connection Channel 21: Platform 211: Pipeline 23: Wafer 25: Supporting substrate A: Cross-sectional area A1: Aperture A2: Aperture D: Spacing. Detailed Implementation

[0029] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the adsorption-type carrier disk of the semiconductor device of the present invention. As shown in the figure, the adsorption-type carrier disk 10 can be applied to semiconductor devices, and is particularly suitable for use on bonding or debonding machines. The adsorption-type carrier disk 10 mainly includes a main body 11, a plurality of first connecting holes 13, a plurality of second connecting holes 15, and at least one buffer space 17, wherein the first connecting holes 13, the second connecting holes 15, and the buffer space 17 are disposed on the main body 11.

[0030] In one embodiment of the present invention, the main body 11 may be a plate-shaped body and includes a first surface 112 and a second surface 114. For example, the main body 11 may be disc-shaped, the first surface 112 may be the upper surface of the adsorption carrier 10, and the second surface 114 may be the lower surface of the adsorption carrier 10.

[0031] One end of each of the plurality of first connecting holes 13 is connected to the first surface 112 of the main body 11, and a plurality of first openings 131 are formed on the first surface 112 of the main body 11. A plurality of second connecting holes 15 are connected to the second surface 114 of the main body 11, and a plurality of second openings 151 are formed on the second surface 114 of the main body 11.

[0032] During the chip manufacturing process, wafer 23 is typically thinned by grinding to reduce chip thickness, lower on-resistance, reduce power consumption, increase processing speed, and extend lifespan. Wafer 23 is then subjected to back-side processing, such as adding back metal to the back side, and is subsequently diced or subjected to advanced packaging processes.

[0033] To prevent wafer 23 from breaking during the aforementioned process steps, it is typically bonded to the carrier substrate 25. Then, the stacked wafer 23 and carrier substrate 25 undergo related processes, such as the aforementioned grinding and thinning, back-side processing, dicing, or advanced packaging of wafer 23. After completing these processes, wafer 23 is further separated from the carrier substrate 25, and subsequent processes are performed on wafer 23.

[0034] Specifically, during the above-mentioned bonding, grinding and thinning, back-side processing, dicing, advanced packaging and / or debonding steps, the stacked wafers 23 and the carrier substrate 25 are placed on the adsorption carrier 10, and the stacked wafers 23 and the carrier substrate 25 are fixed by the adsorption carrier 10.

[0035] In practical applications, such as Figure 3 As shown, the second surface 114 of the adsorption carrier 10 can be placed on a stage 21, wherein the stage 21 includes at least one conduit 211. The conduit 211 of the stage 21 can be connected to a second connection hole 15 provided on the second surface 114 of the adsorption carrier 10, and is used to evacuate air from the connected second connection hole 15 to form a negative pressure in the first connection hole 13, thereby adsorbing and fixing the wafer 23 onto the adsorption carrier 10.

[0036] During the bonding of wafer 23 and carrier substrate 25, wafer 23 can be placed on the first surface 112 of the adsorption carrier 10, and carrier substrate 25 can be adhered to wafer 23 to complete the bonding of wafer 23 and carrier substrate 25. In different embodiments, carrier substrate 25 may be placed on the first surface 112 of adsorption carrier 10, and wafer 23 may be adhered to carrier substrate 25.

[0037] During the debonding of wafer 23 and carrier substrate 25, the stacked wafer 23 and carrier substrate 25 can be placed on the first surface 112 of the adsorption carrier 10, and the adsorption carrier 10 adsorbs and fixes the wafer 23. Then, the stacked wafer 23 and carrier substrate 25 are heated to soften the colloid between them. During the debonding process, chemical agents are sometimes used to dissolve or remove the colloid between wafer 23 and carrier substrate 25 to facilitate the separation of wafer 23 and carrier substrate 25.

[0038] After the separation steps of wafer 23 and carrier substrate 25 are completed, wafer 23 is usually placed on the first surface 112 of adsorption carrier tray 10 to facilitate the use of robotic arm to transport wafer 23 and perform subsequent process steps on wafer 23, so as to avoid damage to the milled and thinned wafer 23 during the transport or subsequent processing.

[0039] Specifically, after the wafer 23 is separated from the substrate 25, the wafer 23 is placed on the first surface 112 of the adsorption carrier 10, and chemical agents are used to remove the adhesive residue on the surface of the wafer 23. During the removal of residual adhesive from the surface of the wafer 23, the stage 21 evacuates air through the second connection hole 15 of the adsorption carrier 10 via the conduit 211, creating a negative pressure in the first connection hole 13 of the adsorption carrier 10 to fix the wafer 23 onto the first surface 112 of the adsorption carrier 10. The adsorption carrier 10 can then rotate the wafer 23 to perform the cleaning step.

[0040] After removing residual adhesive from the surface of wafer 23, the pipeline 211 of stage 21 stops evacuating the second connection hole 15 of the adsorption carrier 10, allowing wafer 23 to move relative to stage 21. However, when the pipeline 211 of stage 21 stops evacuating the second connection hole 15 of the adsorption carrier 10, the chemical agents remaining on stage 21 and / or adsorption carrier 10 may be transferred through the second connection hole 15 to the space between the adsorption carrier 10 and wafer 23 due to the negative pressure within the second connection hole 15, causing contamination to the back side of wafer 23.

[0041] In one embodiment of the present invention, if the back side of wafer 23 has already been equipped with a back metal, the chemical agent may cause contamination of the back metal upon contact with it. For example, if the back metal on wafer 23 is a silver columnar structure, contact with the chemical agent will cause the silver columnar structure to become contaminated and deteriorate. This will result in reliability issues in the subsequent wafer production when the silver columnar structure on wafer 23 is reflowed with the tin lead frame because the interface between the silver and tin is not clean enough.

[0042] To avoid the above problems, such as Figure 1 and Figure 2As shown, the present invention further forms at least one buffer space 17 inside the main body 11 of the adsorption-type support plate 10. The buffer space 17 is disposed inside the main body 11, wherein a plurality of first connection holes 13 are connected to a plurality of second connection holes 15 through the buffer space 17.

[0043] Specifically, one end of each of the first connecting holes 13 is connected to the first surface 112 of the main body 11, and a plurality of first openings 131 are formed on the first surface 112 of the main body 11. The other end of each of the first connecting holes 13 is connected to the buffer space 17, and at least one first connecting port 133 is formed on the buffer space 17.

[0044] Multiple second connection holes 15 are connected to the second surface 114 of the main body 11, and multiple second openings 151 are formed on the second surface 114 of the main body 11. The other end of the second connection hole 15 is connected to the buffer space 17, and at least one second connection port 153 is formed on the buffer space 17.

[0045] In practical applications, the liquid entering the adsorption carrier 10 through the second connection hole 15 is blocked by the buffer space 17 set inside the adsorption carrier 10, which can prevent the liquid from being transported from the second connection hole 15 to the first connection hole 13, thereby reducing the contact between the chemical agent and the back side of the wafer 23 placed on the first surface 112 of the adsorption carrier 10, and reducing the probability of contaminating the metal on the back side of the wafer 23.

[0046] In one embodiment of the present invention, the cross-sectional area A of the buffer space 17 is larger than the aperture A1 of the first connecting hole 13 and the aperture A2 of the second connecting hole 15. For example, the volume of the buffer space 17 is larger than the volume of the multiple second connecting holes 15 and / or the first connecting hole 13, and can be used to temporarily contain the liquid entering the body 11 of the adsorption carrier plate 10 through the second connecting hole 15.

[0047] In one embodiment of the invention, the first connecting hole 13 and the second connecting hole 15 of the connecting buffer space 17 may be located on different straight lines, wherein the first connecting hole 13, the buffer space 17, and the second connecting hole 15 form a bend-like structure. In other words, the first connecting port 133 of the first connecting hole 13 does not directly face the second connecting port 153 of the second connecting hole 15. For example, the first connecting port 133 of the first connecting hole 13 and the second connecting port 153 of the second connecting hole 15 have a distance D along the direction of the first surface 112 of the parallel adsorption support plate 10, so that the liquid entering the buffer space 17 from the second connecting hole 15 will be isolated by the buffer space 17 and will not be directly transferred to the first connecting hole 13.

[0048] In the drawings of this embodiment, the cross-sectional shape of the buffer space 17 is square. In practical applications, the cross-sectional shape of the buffer space 17 can be other different geometric shapes, such as trapezoidal, circular, elliptical, etc. When the cross-sectional shape of the buffer space 17 is trapezoidal, the sidewall adjacent to the first connection port 133 can be the waist of the trapezoid. Specifically, the sidewall adjacent to the first connection port 133 will face the second connection port 153, wherein the distance between the sidewall and the second connection port 153 will increase in the direction away from the first connection port 133, so as to improve the effect of the buffer space 17 in blocking the fluid entering through the second connection hole 15.

[0049] like Figure 4 As shown, the main body 11 of the adsorption-type support plate 10 may include a first plate 111 and a second plate 113, wherein a first connecting hole 13 is disposed on the first plate 111, and a second connecting hole 15 and a buffer space 17 are disposed on the second plate 113. For example, the first connecting hole 13 may be a through hole penetrating the first plate 111, while the second connecting hole 15 may penetrate the second plate 113 through the buffer space 17, wherein the cross-sectional area of ​​the buffer space 17 is larger than that of the second connecting hole 15.

[0050] The first disk 111 is stacked on the second disk 113, wherein the first connecting hole 13 on the first disk 111 is aligned with and connected to the buffer space 17 of the second disk 113 to form a buffer space. Figure 1 The suction-type support plate 10 is shown. In another embodiment of the present invention, the first connecting hole 13 and the buffer space 17 can be provided on the first plate body 111, while the second connecting hole 15 is provided on the second plate body 113. Alternatively, a portion of the buffer space 17 can be provided on the first plate body 111, and the remaining buffer spaces 17 can be provided on the second plate body 113.

[0051] Figure 5 This is a top view of an embodiment of the first disk body of the adsorption-type carrier disk of the semiconductor device of the present invention. Figure 6 This is a top view of an embodiment of the second disk of the adsorption-type carrier disk of the semiconductor device of the present invention. Figure 7 This is a top perspective view of an embodiment of the first and second disk bodies of the adsorption carrier disk of the semiconductor device of the present invention.

[0052] like Figure 5 As shown, the first disc body 111 of the adsorption type carrier disc 10 includes a plurality of first connection holes 13, wherein the plurality of first connection holes 13 are disposed on the first disc body 111 and penetrate through the two surfaces of the first disc body 111.

[0053] like Figure 6 As shown, the second disk body 113 of the adsorption-type carrier disk 10 includes at least one buffer channel 19 and a plurality of second connecting holes 15, wherein the buffer channel 19 is... Figure 1One specific embodiment of the buffer space 17. For example, the buffer channel 19 and the plurality of second connecting holes 15 may be grooves provided on the second disk body 113, wherein the plurality of second connecting holes 15 are connected to the buffer channel 19, such that the second connecting holes 15 penetrate the second disk body 113 through the buffer channel 19.

[0054] In one embodiment of the present invention, the buffer channel 19 may include a first annular channel 191, a second annular channel 193, and at least one connecting channel 195. For example, the circumference of the second annular channel 193 is greater than that of the first annular channel 191, wherein the first annular channel 191 is located inside the second annular channel 193, and the connecting channel 195 may be arranged radially along the second disk body 113 and connect the first annular channel 191 and the second annular channel 193.

[0055] like Figure 7 As shown, the first disk body 111 and the second disk body 113 of the adsorption type carrier disk 10 are stacked. The multiple first connecting holes 13 provided on the first disk body 111 are aligned and connected to the buffer channel 19 provided on the second disk body 113. The multiple first connecting holes 13 are connected to multiple second connecting holes 15 through the buffer channel 19. For example, the multiple first connecting holes 13 located on the first disk body 111 can be arranged along the buffer channel 19 and arranged on the first disk body 111 in a shape approximately similar to the buffer channel 19.

[0056] When the first disk 111 and the second disk 113 are stacked, the multiple first connecting holes 13 on the first disk 111 will not be aligned with the second connecting holes 15 on the second disk 113. The first connecting holes 13 will connect to the second connecting holes 15 through a buffer channel 19. Furthermore, the number of first connecting holes 13 on the first disk 111 can be greater than the number of second connecting holes 15 on the second disk 113, and the diameter of the second connecting holes 15 on the second disk 113 can be greater than the diameter of the first connecting holes 13 on the first disk 111.

[0057] In one embodiment of the present invention, a plurality of third connecting holes 12 may be provided on the first disk 111 and the second disk 113, wherein the positions and numbers of the plurality of third connecting holes 12 on the first disk 111 and the second disk 113 are the same. When the first disk 111 and the second disk 113 are stacked, the third connecting holes 12 on the first disk 111 will be aligned with the third connecting holes 12 on the second disk 113, so that the third connecting holes 12 penetrate the main body 11 of the adsorption-type support disk 10.

[0058] In practical applications, when the robotic arm carries and transports the adsorption-type carrier 10, it can create a negative pressure on the first surface 112 of the adsorption-type carrier 10 through the third connecting hole 12 to adsorb and fix the wafer 23 placed on the first surface 112 of the adsorption-type carrier 10. Specifically, the number of third connecting holes 12 can be less than the number of first connecting holes 13, which can reduce the amount of chemical agent transferred to the first surface 112 of the adsorption-type carrier 10 through the third connecting holes 12.

[0059] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. An adsorption-type support tray for a semiconductor device, characterized in that, include: A main body includes a first surface and a second surface, wherein the first surface is used to support a wafer or a substrate. Multiple first connecting holes are connected to the first surface of the body, and multiple first openings are formed on the first surface of the body; Multiple second connection holes are connected to the second surface of the body, and multiple second openings are formed on the second surface of the body; and At least one buffer space is located inside the main body, wherein the plurality of first connecting holes are connected to the plurality of second connecting holes through the buffer space, and the cross-sectional area of ​​the buffer space is larger than the apertures of the plurality of first connecting holes and the plurality of second connecting holes.

2. The adsorption-type support plate as described in claim 1, characterized in that, The first connection hole includes a first connection port for connecting the buffer space, and the second connection hole includes a second connection port for connecting the buffer space.

3. The adsorption-type support plate as described in claim 2, characterized in that, The first connection port of the first connection hole will not directly face the second connection port of the second connection hole.

4. The adsorption-type support plate as described in claim 2, characterized in that, The first connection port of the first connection hole and the second connection port of the second connection hole have a distance between them in a direction parallel to the first surface of the body.

5. The adsorption-type support plate as described in claim 1, characterized in that, The volume of the buffer space is greater than the volume of the plurality of first connecting holes and the plurality of second connecting holes.

6. The adsorption-type support plate as described in claim 1, characterized in that, The main body includes a first disk and a second disk, the plurality of first connection holes are located in the first disk, and the plurality of second connection holes and the buffer space are located in the second disk.

7. The adsorption-type support plate as described in claim 6, characterized in that, The first disk and the second disk are stacked, and the plurality of first connection holes on the first disk are connected to the buffer space on the second disk.

8. The adsorption-type support plate as described in claim 7, characterized in that, The buffer space of the second disk is a buffer channel, and the plurality of first connection holes are connected to the plurality of second connection holes through the buffer channel.

9. The adsorption-type support plate as described in claim 8, characterized in that, The plurality of first connection holes on the first disc are arranged along the buffer space of the second disc.

10. The adsorption-type support plate as described in claim 8, characterized in that, The multiple first connection holes will not align with the multiple second connection holes.

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