High-precision etching optimization method and apparatus for metal shadow plates

Abstract

This invention discloses a high-precision etching optimization method and apparatus for metal shadow plates, relating to the field of etching technology. The method includes: reading etching pattern information, marking etching depths at different etching positions, and generating an etching depth distribution map; collecting etching solution information and metal substrate information, performing lateral corrosion behavior simulation according to preset sidewall precision requirements, and establishing a limit single-etching constraint; performing staged occlusion etching segmentation based on the etching depth distribution map according to the limit single-etching constraint, generating staged etching parameters, each etching parameter including exposure and development parameters and etching control parameters; and controlling the staged etching of the metal substrate using the staged etching parameters. This invention solves the technical problems of uneven etching depth and difficult-to-control lateral corrosion in existing technologies by establishing a limit single-etching constraint and implementing staged occlusion etching, thereby improving etching precision and consistency.

Description

Technical Field

[0001] This invention relates to the field of etching technology, and more specifically to a high-precision etching optimization method and apparatus for metal shadow plates. Background Technology

[0002] In the existing etching process of metal shadow plates, chemical etching solutions are usually used to react the metal substrate as a whole. However, due to uneven diffusion of the etching solution and uncontrollable lateral corrosion, the etching depth at different locations is easily uneven, and the sidewall morphology is affected by corrosion diffusion, resulting in over-etching or deformation, which makes it difficult to meet the requirements for high-precision etching depth distribution and sidewall consistency. Summary of the Invention

[0003] This application provides a high-precision etching optimization method and apparatus for metal shadow plates, which is used to address the technical problems of uneven etching depth and difficult control of lateral corrosion in existing technologies.

[0004] In view of the above problems, this application provides a high-precision etching optimization method and apparatus for metal shadow plates.

[0005] A first aspect of this application provides a high-precision etching optimization method for a metallic shadow plate, the method comprising:

[0006] Read the etching pattern information, mark the etching depth at different etching positions, and generate an etching depth distribution map; collect etching solution information and metal substrate information, perform lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establish a limit single etching constraint; according to the limit single etching constraint, perform multi-stage occlusion etching segmentation based on the etching depth distribution map, and generate multi-stage etching parameters, each etching parameter including exposure and development parameters and etching control parameters; use the multi-stage etching parameters to control the multi-stage etching of the metal substrate.

[0007] A second aspect of this application provides a high-precision etching optimization apparatus for a metal shadow plate, the apparatus comprising:

[0008] The depth distribution map generation module is used to read etching pattern information, perform etching depth marking at different etching positions, and generate an etching depth distribution map; the behavior simulation module is used to collect etching solution information and metal substrate information, perform lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establish a limit single etching constraint; the segmentation module is used to perform multi-stage occlusion etching segmentation based on the etching depth distribution map according to the limit single etching constraint, and generate multi-stage etching parameters, each etching parameter including exposure and development parameters and etching control parameters; the etching control module is used to control the multi-stage etching of the metal substrate using the multi-stage etching parameters.

[0009] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0010] This application reads etching pattern information, performs etching depth marking at different etching locations, and generates an etching depth distribution map; it collects etching solution information and metal substrate information, performs lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establishes a limit single-etching constraint; according to the limit single-etching constraint, it performs multi-stage occlusion etching segmentation based on the etching depth distribution map, generating multi-stage etching parameters, each including exposure and development parameters and etching control parameters; and uses the multi-stage etching parameters to control the multi-stage etching of the metal substrate. This invention solves the technical problems of uneven etching depth and difficult-to-control lateral corrosion in existing technologies by establishing a limit single-etching constraint and implementing multi-stage occlusion etching, thereby improving etching accuracy and consistency. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 A schematic diagram of a high-precision etching optimization method for metal shadow plates provided in an embodiment of this application;

[0013] Figure 2 This is a schematic diagram of the high-precision etching optimization device for metal shadow plates provided in an embodiment of this application.

[0014] Figure labeling: Depth distribution map generation module 11, behavior simulation module 12, segmentation module 13, etching control module 14. Detailed Implementation

[0015] This application provides a high-precision etching optimization method and apparatus for metal shadow plates, which addresses the technical problems of uneven etching depth and difficult control of lateral corrosion in existing technologies. By establishing a limit single etching constraint and implementing multi-stage shading etching, the technical effect of improving etching accuracy and consistency is achieved.

[0016] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0017] It should be noted that any variation of the terms "comprising" and "having" is intended to cover non-exclusive inclusion, for example, a process, method, apparatus, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or modules that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0018] Example 1, as Figure 1 As shown, this application provides a high-precision etching optimization method for metal shadow plates, the method comprising:

[0019] Step S100: Read the etching pattern information, perform etching depth marking at different etching locations, and generate an etching depth distribution map.

[0020] In this embodiment, the pre-stored etching pattern information is first read. This etching pattern information is a circuit layout or structural design data generated and stored in advance according to the target product structure during the process design stage, which is used to clarify the specific area and shape to be etched on the metal substrate.

[0021] Next, etching depth marking is performed at different etching locations based on the etching pattern information. That is, the required etching depth is quantitatively marked in each target area of ​​the metal shadow plate substrate, so that each etching location has a depth target. Finally, the depth markings at all the above locations are globally integrated and mapped to generate an etching depth distribution map.

[0022] Step S200: Collect etching solution information and metal substrate information, perform lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establish limit single etching constraints.

[0023] In this embodiment, pre-prepared etching solution information and metal substrate information are first extracted. The etching solution information includes the chemical composition, concentration, and reaction characteristics of the etching solution, while the metal substrate information includes the type of metal material, thickness, and surface characteristics.

[0024] Next, lateral corrosion behavior simulation is performed according to the preset sidewall accuracy requirements. In this process, a spray twin of the spray-type chemical etching equipment is first established. Then, based on the etching solution information and the metal substrate information, an etching reaction model is created, establishing an etching reaction twin. The spray twin and the etching reaction twin are then run together to perform an etching solution spray test, and the continuous simulation status of lateral corrosion is monitored simultaneously during the test. Through dynamic identification, when the lateral corrosion reaches the preset sidewall accuracy requirement boundary, the corresponding etching depth, etching time, and etching solution spray volume curve over time are extracted to generate the ultimate single-etching constraint.

[0025] Furthermore, the method provided in the application embodiment, which involves collecting etching solution information and metal substrate information, performing lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establishing limit single etching constraints, also includes:

[0026] A spray twin of a spray-type chemical etching device is established; an etching reaction twin is established by modeling the etching reaction using the etching solution information and the metal substrate information; the spray twin and the etching reaction twin are combined to perform an etching solution spray test, and the continuous simulation state of lateral corrosion is monitored simultaneously. The etching depth, etching time, and etching solution spray volume curve that change with etching time when the lateral corrosion reaches the preset sidewall accuracy requirement boundary are identified, and the ultimate single etching constraint is generated.

[0027] In this embodiment, a fluid dynamics modeling method is first used to establish a spray twin of the spray chemical etching equipment based on the actual process data of the equipment. The actual process data includes nozzle type, nozzle opening diameter, spray angle, the relationship between flow rate and pressure, and the distance and movement mode between the nozzle and the metal substrate. This data is extracted from the equipment's factory process manual.

[0028] Next, a chemical reaction modeling method is used to establish an etching reaction twin, using etching solution information and metal substrate information as input.

[0029] Subsequently, a co-simulation method was used to combine a spray twin and an etching reaction twin to perform an etching solution spray test. During the spray test, the spray twin provided time-varying etching solution spray distribution data, and the etching reaction twin calculated the etching rate and lateral corrosion rate on the metal substrate surface based on this data. Through this process, the continuous simulation status of lateral corrosion was monitored simultaneously.

[0030] Finally, the etching depth, etching time, and etching solution spray volume curves as a function of etching time are identified when lateral corrosion reaches the preset sidewall accuracy requirement boundary. During this process, when co-simulation identifies that lateral corrosion has reached the preset sidewall accuracy requirement boundary, it is determined whether the residual etching solution state at this point exceeds the preset etching stop threshold. If the detection result shows that it does not exceed the threshold, the corresponding etching depth, etching time, and etching solution spray volume curves as a function of etching time are directly used to generate the ultimate single-etching constraint. If the detection result shows that it exceeds the threshold, the etching solution spray volume is dynamically reduced and adjusted according to the preset compensation mechanism, and the spray test and simulation monitoring are re-executed until the residual etching solution state meets the preset etching stop threshold. Finally, the etching depth, etching time, and etching solution spray volume curves are extracted again to generate the ultimate single-etching constraint that meets the process requirements.

[0031] Furthermore, the method provided in the application embodiments also includes:

[0032] When identifying the etching depth, etching time, and etching fluid spray volume curve that the lateral corrosion reaches the preset sidewall accuracy requirement boundary, determine whether the residual etching fluid state exceeds the preset etching stop state threshold. If not, generate the ultimate single etching constraint using the etching depth, etching time, and etching fluid spray volume curve that varies with etching time.

[0033] In this embodiment, the continuous simulation state of lateral corrosion is first analyzed based on the joint simulation results. When the lateral corrosion reaches the preset sidewall accuracy requirement boundary, the corresponding etching depth, etching time, and etching fluid spray volume curve changing with etching time are extracted. The preset sidewall accuracy requirement boundary refers to the allowable sidewall morphology deviation range of the metal shadow plate during etching. The etching depth corresponds to the maximum vertical etching depth achievable within this deviation range. The etching time corresponds to the time interval from the start of etching to reaching this depth. The etching fluid spray volume curve is the trajectory of the liquid spray flow rate of the spraying device changing with time within this time interval, used to characterize the relationship between liquid action intensity and etching rate.

[0034] After extracting the above parameters, the residual etching solution state at the end of etching is detected using a residual liquid state monitoring method. This involves measuring the volume or thickness of the residual liquid on the surface of the metal substrate and inside the etching trenches, and using this as a quantitative result of the residual liquid state. This detection result is then compared with a preset etching stop state threshold. The preset etching stop state threshold is a residual liquid allowable limit set in advance based on material characteristics and process requirements. It is used to determine whether the residual etching solution on the substrate surface and inside the etching trenches after a single etching operation will continue to cause excessive corrosion or morphological deviations.

[0035] If the test results show that the residual etching solution state does not exceed the preset etching stop state threshold, then the extracted etching depth, etching time and etching solution spray volume curves are directly used to generate the limit single etching constraint.

[0036] Furthermore, the method provided in the application embodiments also includes:

[0037] If the residual etching solution exceeds the preset etching stop state threshold, the etching solution spraying volume is dynamically reduced and adjusted according to the preset compensation before the test is repeated until the preset etching stop state threshold is met, thus generating the ultimate single etching constraint.

[0038] In this embodiment, when the residual etching solution is detected to exceed the preset etching stop threshold, a compensation control mechanism is activated to dynamically reduce the amount of etching solution sprayed according to a preset compensation. This adjustment process gradually reduces the spray flow rate over time, thereby gradually reducing the amount of residual liquid on the substrate surface and in the trenches, thus weakening the secondary corrosion effect of the residual etching solution on the metal substrate.

[0039] After dynamically reducing and adjusting the spray volume, a new spray test was performed. The lateral corrosion was continuously monitored through the combined operation of the spray twin and the etching reaction twin. During this process, the spray twin provided input data on changes in spray coverage and spray volume, while the etching reaction twin calculated the etching depth and lateral corrosion evolution under different spray conditions and provided real-time feedback on the distribution of residual liquid on the surface and in the trenches.

[0040] If the new simulation monitoring results indicate that the residual etching solution state still exceeds the preset etching stop state threshold, the etching solution spraying volume will continue to be dynamically reduced according to the preset compensation, and the spraying test and continuous simulation monitoring will be repeated. Through this iterative process, the reduction magnitude and time distribution of the spraying volume curve will be continuously optimized until the residual etching solution state is stably controlled within the preset etching stop state threshold.

[0041] Once the preset etching stop threshold is met, the etching depth, etching time, and etching solution spray volume curve as a function of etching time are extracted, and a limit single etching constraint that meets the process requirements is generated.

[0042] Step S300: According to the limit single etching constraint, perform multi-stage occlusion etching segmentation based on the etching depth distribution map to generate multi-stage etching parameters. Each etching parameter includes exposure and development parameters and etching control parameters.

[0043] In this embodiment, when performing segmented occlusion etching based on the etching depth distribution map according to the limit single-et etching constraint, the etching depth of different regions is first partitioned and sorted based on the etching depth distribution map to form an etching depth sequence. Then, the etching depth is extracted one by one from the etching depth sequence, and segmented occlusion etching is performed sequentially in conjunction with the limit single-et etching constraint. A global segmentation result is obtained through multiple iterations. Next, the etching position for each step is extracted from the global segmentation result to generate exposure and development parameters for the photolithography process. Combined with the etching time under the limit single-et etching constraint and the etching solution spray volume curve varying with etching time, etching control parameters for process control are generated, thus forming the segmented etching parameters.

[0044] Furthermore, in the method provided in the application embodiment, according to the limit single-et etching constraint, multi-stage occlusion etching segmentation is performed based on the etching depth distribution map to generate multi-stage etching parameters. Each etching parameter includes exposure and development parameters and etching control parameters, and also includes:

[0045] Based on the etching depth distribution map, the area is divided according to etching depth to generate multiple etching depths for multiple regions. These etching depths are arranged in ascending order to generate an etching depth sequence. A first etching depth is extracted from the etching depth sequence, and segmented into multiple occlusion etchings according to the limiting single etching constraint to generate a first segmented result. A second etching depth is then extracted from the etching depth sequence. Based on the first segmented result, segmented occlusion etching is performed again according to the limiting single etching constraint to generate a second segmented result. The second segmented result is connected to the first segmented result, and this process is repeated until every etching depth in the etching depth sequence is traversed to obtain a global segmented result. The etching position of each step in the global segmented result is extracted to generate exposure and development parameters. The etching parameters are identified based on the etching time corresponding to the limiting single etching constraint and the etching solution spray volume curve changing with etching time, generating etching control parameters for each step.

[0046] In this embodiment, the metal shadow plate is first divided into regions based on the etching depth distribution map using a region segmentation method and connected component labeling, according to the target etching depth at each location, resulting in multiple regions and their corresponding etching depths. Then, the multiple etching depths are sorted in ascending stable order to generate an etching depth sequence.

[0047] Next, the first etching depth is extracted from the etching depth sequence. This first etching depth refers to the etching depth at the beginning of the sequence. Based on this first etching depth, and combined with the limit single-pass etching constraint, multi-stage masking etching segmentation is implemented through photolithography mask generation and masking pattern transfer. After the corresponding exposure, development, and etching steps are completed, the first segmented result is obtained. If the target etching depth of a certain area is not an integer multiple of the limit single-pass etching constraint, the etching time and etchant spray volume curves need to be synchronously adjusted in the last etching step to avoid exceeding the process limits and ensure sidewall accuracy.

[0048] The second etching depth is then extracted from the etching depth sequence. Based on the first segmentation result, segmented etching is performed again according to the limiting single-etching constraint. Through a new round of mask design, exposure, development, and etching operations, the second segmentation result is obtained. If this etching depth does not perfectly match the limiting single-etching constraint, the etching solution parameters also need to be adjusted. By traversing the entire etching depth sequence and connecting each segmentation result sequentially, the global segmentation result is finally obtained.

[0049] Subsequently, the etching locations for each etching pass are extracted from the global sequence results, and corresponding exposure and development parameters are generated. The etching locations are the areas to be etched; these areas are transparent during exposure and become exposed on the metal surface after development. Areas that do not require etching are covered by cured photoresist to form a corrosion-resistant protective layer. Specifically, the exposure steps include creating a film based on the pattern of the etching locations, coating the metal plate surface with photoresist, curing the photoresist under the transparent areas using ultraviolet light, while leaving the photoresist under the black areas uncured. The development step involves rinsing with developer to remove the uncured photoresist, retaining the cured areas to form a protective layer. This process yields the exposure and development parameters for each etching pass.

[0050] Finally, the etching parameters are identified based on the etching time corresponding to the limiting single-etching constraint and the etchant spray volume curve changing with the etching time. In this process, the global batch results are first analyzed sequentially to determine whether the etching depth of each batch is consistent with the limiting single-etching constraint. If the etching depth is consistent with the limiting single-etching constraint, the corresponding etching control parameters are directly generated based on the etching time corresponding to the constraint and the etchant spray volume curve changing with the etching time. If the etching depth is inconsistent with the limiting single-etching constraint, gain matching is performed through a pre-prepared gain control module to adjust the etching time and etchant spray volume curve corresponding to the limiting single-etching constraint, thereby generating the adjusted etching control parameters.

[0051] Furthermore, in the method provided in the application embodiments, generating the second fractional result further includes:

[0052] Identify the second residual depth that is not covered by the first segmentation result, and perform segmented occlusion etching on the second residual depth according to the limit single etching constraint to generate the second segmentation result.

[0053] In this embodiment, when extracting the second etching depth from the etching depth sequence, a coverage analysis is first performed to identify the portion not covered by the first etching result, and this portion is defined as the second residual depth. The second residual depth represents the etching depth range within the second etching depth that still needs to be further removed beyond the etching area completed by the first etching.

[0054] After obtaining the second residual depth, the process is decomposed according to the limit of single-pass etching. This residual depth is divided into several sub-regions that meet the single-pass etching depth limit. By successively performing staged occlusion etching segmentation, each sub-region can be etched within the single-pass etching limit. During this process, each segmentation corresponds to a new process step until the entire second residual depth is completely processed. Through these operations, the final staged result corresponding to the second etching depth is generated.

[0055] Furthermore, the method provided in the application embodiments also includes:

[0056] When connecting the second fractional result to the first fractional result, the first fractional result is marked with each etching position in the etching depth distribution map, and the second fractional result is marked with other etching positions except for the position corresponding to the first etching depth.

[0057] In this embodiment, to connect the second segmentation result to the first segmentation result, each etching position corresponding to the first segmentation result is first marked in the etching depth distribution map. This marking process establishes a position index within the graphics data layer, explicitly marking the area covered by the completed first etching depth as a completed state, thereby ensuring that these areas will not participate in new segmentation or exposure in subsequent etching processes.

[0058] After marking the first set of results, the marking operation continues for the second set of results. In this modification, based on the depth order defined in the etching depth distribution map, only the areas other than those corresponding to the first etching depth are marked, i.e., covering the second etching depth and etching positions greater than the second etching depth. Through this layer-by-layer marking and connection from shallow to deep, continuous and non-overlapping batch merging results are formed, ensuring that the depth of each layer is effectively controlled under the constraint of the extreme single etching, providing accurate input basis for the subsequent generation of exposure and development parameters and etching control parameters.

[0059] Furthermore, in the method provided in the application embodiment, the etching parameters are identified based on the etching time corresponding to the limit single etching constraint and the etching liquid spray volume curve changing with the etching time, and etching control parameters are generated for each etching step, which further includes:

[0060] Analyze whether the etching depth of each step in the global fractional etching result is consistent with the limiting single etching constraint; if so, generate corresponding etching control parameters based on the etching time corresponding to the limiting single etching constraint and the etching fluid spray volume curve that varies with the etching time; if not, perform gain matching through a preset gain control module, and adjust the etching time corresponding to the limiting single etching constraint and the etching fluid spray volume curve that varies with the etching time according to the matching gain to generate corresponding etching control parameters.

[0061] In this embodiment, the global results are first analyzed layer by layer to determine whether the etching depth corresponding to each etching step is consistent with the limit single etching constraint. When it is detected that the etching depth of a certain etching step is consistent with the limit single etching constraint, the etching time and the etching fluid spray volume curve corresponding to the constraint are directly called, and the corresponding etching control parameters are generated accordingly.

[0062] When the etching depth at a given time does not match the limit single-etching constraint, a correction is made by the gain control module. The gain control module includes a depth comparator and an automatic gain controller. The depth comparator compares the current etching depth with the constraint depth and outputs the deviation. The automatic gain controller matches the corresponding gain coefficient based on this deviation. Then, the etching time corresponding to the limit single-etching constraint and the etchant spray volume curve changing with the etching time are adjusted according to the matched gain. Specifically, the gain coefficient is multiplied one by one by the original etching time and etchant spray volume curve to obtain the adjusted time parameters and flow rate curve. This adjusted parameter is used as the etching control parameter.

[0063] Furthermore, the method provided in the application embodiments also includes:

[0064] The gain control module includes a depth comparator and an automatic gain controller. The depth comparator compares the deviation between the etching depth of each etching step and the depth of the limiting single etching constraint, and inputs the result to the automatic gain controller. The automatic gain controller matches the corresponding gain according to the deviation. The automatic gain controller is constructed through sample deviation data and sample control gain training.

[0065] In this embodiment, the gain control module includes a depth comparator and an automatic gain controller. The depth comparator compares the etching depth achieved in each etching step with the target depth set in the limiting single-etch constraint, and outputs the deviation between the two. The limiting single-etch constraint is used to limit the maximum allowable depth for a single etching step.

[0066] The deviation is then passed as an input signal to the automatic gain controller (AGC). The AGC matches the corresponding gain coefficient based on the input deviation. During the training process of the AGC, a large amount of historical deviation data from actual etching processes and corresponding sample control gains are selected as training samples to establish the correspondence between input and output. A feedforward neural network is used as the basic model during training. Historical deviation data is input into the network, and the network parameters are continuously adjusted through backpropagation to make the output gain coefficient as close as possible to the sample control gain. After iterative training, a stable mapping model is formed, enabling the AGC to quickly output the corresponding gain coefficient for new deviation data in practical applications.

[0067] Step S400: Control the etching of the metal substrate in stages using the said etching parameters.

[0068] In this embodiment, when controlling the etching of a metal substrate using epoch-based etching parameters, firstly, based on the exposure and development parameters in the epoch-based etching parameters, a pattern transfer is completed on the surface of the metal substrate using photolithography, forming a structure with photoresist coverage and exposed areas. Subsequently, based on the etching control parameters in the epoch-based etching parameters, the etching solution spraying process is controlled according to the etching time and the etching solution spraying volume curve that varies with the etching time, thereby achieving precise execution of epoch-based etching.

[0069] In summary, the embodiments of this application have at least the following technical effects:

[0070] This application reads etching pattern information, performs etching depth marking at different etching locations, and generates an etching depth distribution map; it collects etching solution information and metal substrate information, performs lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establishes a limit single-etching constraint; according to the limit single-etching constraint, it performs multi-stage occlusion etching segmentation based on the etching depth distribution map, generating multi-stage etching parameters, each including exposure and development parameters and etching control parameters; and uses the multi-stage etching parameters to control the multi-stage etching of the metal substrate. This invention solves the technical problems of uneven etching depth and difficult-to-control lateral corrosion in existing technologies by establishing a limit single-etching constraint and implementing multi-stage occlusion etching, thereby improving etching accuracy and consistency.

[0071] Example 2, based on the same inventive concept as the high-precision etching optimization method for metal shadow plates in the foregoing examples, such as... Figure 2 As shown, this application provides a high-precision etching optimization apparatus for metal shadow plates. The apparatus and method embodiments in this application are based on the same inventive concept. The apparatus includes:

[0072] The depth distribution map generation module 11 is used to read the etching pattern information, perform etching depth marking at different etching positions, and generate an etching depth distribution map; the behavior simulation module 12 is used to collect etching fluid information and metal substrate information, perform lateral corrosion behavior simulation according to preset sidewall accuracy requirements, and establish a limit single etching constraint; the segmentation module 13 is used to perform segmented occlusion etching based on the etching depth distribution map according to the limit single etching constraint, and generate segmented etching parameters, each etching parameter including exposure and development parameters and etching control parameters; the etching control module 14 is used to perform segmented etching control on the metal substrate using the segmented etching parameters.

[0073] Furthermore, the device is also used to perform the following functions:

[0074] A spray twin of a spray-type chemical etching device is established; an etching reaction twin is established by modeling the etching reaction using the etching solution information and the metal substrate information; the spray twin and the etching reaction twin are combined to perform an etching solution spray test, and the continuous simulation state of lateral corrosion is monitored simultaneously. The etching depth, etching time, and etching solution spray volume curve that change with etching time when the lateral corrosion reaches the preset sidewall accuracy requirement boundary are identified, and the ultimate single etching constraint is generated.

[0075] Furthermore, the device is also used to perform the following functions:

[0076] When identifying the etching depth, etching time, and etching fluid spray volume curve that the lateral corrosion reaches the preset sidewall accuracy requirement boundary, determine whether the residual etching fluid state exceeds the preset etching stop state threshold. If not, generate the ultimate single etching constraint using the etching depth, etching time, and etching fluid spray volume curve that varies with etching time.

[0077] Furthermore, the device is also used to perform the following functions:

[0078] If the residual etching solution exceeds the preset etching stop state threshold, the etching solution spraying volume is dynamically reduced and adjusted according to the preset compensation before the test is repeated until the preset etching stop state threshold is met, thus generating the ultimate single etching constraint.

[0079] Furthermore, the device is also used to perform the following functions:

[0080] Based on the etching depth distribution map, the area is divided according to etching depth to generate multiple etching depths for multiple regions. These etching depths are arranged in ascending order to generate an etching depth sequence. A first etching depth is extracted from the etching depth sequence, and segmented into multiple occlusion etchings according to the limiting single etching constraint to generate a first segmented result. A second etching depth is then extracted from the etching depth sequence. Based on the first segmented result, segmented occlusion etching is performed again according to the limiting single etching constraint to generate a second segmented result. The second segmented result is connected to the first segmented result, and this process is repeated until every etching depth in the etching depth sequence is traversed to obtain a global segmented result. The etching position of each step in the global segmented result is extracted to generate exposure and development parameters. The etching parameters are identified based on the etching time corresponding to the limiting single etching constraint and the etching solution spray volume curve changing with etching time, generating etching control parameters for each step.

[0081] Furthermore, the device is also used to perform the following functions:

[0082] Identify the second residual depth that is not covered by the first segmentation result, and perform segmented occlusion etching on the second residual depth according to the limit single etching constraint to generate the second segmentation result.

[0083] Furthermore, the device is also used to perform the following functions:

[0084] When connecting the second fractional result to the first fractional result, the first fractional result is marked with each etching position in the etching depth distribution map, and the second fractional result is marked with other etching positions except for the position corresponding to the first etching depth.

[0085] Furthermore, the device is also used to perform the following functions:

[0086] Analyze whether the etching depth of each step in the global fractional etching result is consistent with the limiting single etching constraint; if so, generate corresponding etching control parameters based on the etching time corresponding to the limiting single etching constraint and the etching fluid spray volume curve that varies with the etching time; if not, perform gain matching through a preset gain control module, and adjust the etching time corresponding to the limiting single etching constraint and the etching fluid spray volume curve that varies with the etching time according to the matching gain to generate corresponding etching control parameters.

[0087] Furthermore, the device is also used to perform the following functions:

[0088] The gain control module includes a depth comparator and an automatic gain controller. The depth comparator compares the deviation between the etching depth of each etching step and the depth of the limiting single etching constraint, and inputs the result to the automatic gain controller. The automatic gain controller matches the corresponding gain according to the deviation. The automatic gain controller is constructed through sample deviation data and sample control gain training.

[0089] It should be noted that the order of the embodiments described above is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, the above description focuses on specific embodiments of this specification. The processes depicted in the accompanying drawings do not necessarily require a specific or sequential order to achieve the desired results. In some implementations, multitasking and parallel processing are possible or may be advantageous.

[0090] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0091] This specification and accompanying drawings are merely illustrative examples of this application and are intended to cover any and all modifications, variations, combinations, or equivalents within the scope of this application. Clearly, those skilled in the art can make various alterations and modifications to this application without departing from its scope. Therefore, if such modifications and modifications fall within the scope of this application and its equivalents, this application intends to include such modifications and modifications.

Claims

1. A method for high precision etching optimization of metal shadow masks, characterized in that, The method comprises the following steps: reading etching pattern information, performing different etching position etching depth marking, and generating etching depth distribution map; collecting etching liquid information and metal plate substrate information, performing lateral etching behavior simulation according to preset sidewall precision requirement, and establishing limit single etching constraint; performing multiple etching shielding etching segmentation based on the etching depth distribution map according to the limit single etching constraint, and generating multiple etching parameters, wherein the etching parameters of each time include exposure development parameters and etching control parameters; controlling multiple etching of the metal plate substrate according to the multiple etching parameters; collecting etching liquid information and metal plate substrate information, performing lateral etching behavior simulation according to preset sidewall precision requirement, and establishing limit single etching constraint, comprising: establishing a spraying twin of the spraying type chemical etching equipment; modeling etching reaction based on the etching liquid information and the metal plate substrate information, and establishing an etching reaction twin; performing spraying test of the etching liquid by combining the spraying twin and the etching reaction twin, and synchronously monitoring continuous simulation state of lateral etching, identifying etching depth, etching time and etching liquid spraying amount curve changing with etching time when lateral etching reaches preset sidewall precision requirement boundary, and generating the limit single etching constraint.

2. The method for high precision etching optimization of metal shadow masks of claim 1, wherein, When the etching depth, the etching time and the etching liquid spraying amount curve changing with the etching time are identified when the lateral etching reaches the preset sidewall precision requirement boundary, it is judged whether the residual etching liquid state exceeds the preset etching stop state threshold, and if not, the etching depth, the etching time and the etching liquid spraying amount curve changing with the etching time are used to generate the limit single etching constraint.

3. The method for high precision etching optimization of metal shadow masks of claim 2, wherein, If the residual etching liquid state exceeds the preset etching stop state threshold, the etching liquid spraying amount is adjusted by dynamic reduction according to preset compensation, and then the test is performed again until the preset etching stop state threshold is met, and the limit single etching constraint is generated.

4. The method for high precision etching optimization of metal shadow masks of claim 1, wherein, Performing multiple etching shielding etching segmentation based on the etching depth distribution map according to the limit single etching constraint, and generating multiple etching parameters, wherein the etching parameters of each time include exposure development parameters and etching control parameters, comprising: dividing the etching depth distribution map into multiple regions according to etching depth, and generating multiple etching depths of the multiple regions; arranging the multiple etching depths in order from small to large, and generating etching depth sequence; extracting first etching depth from the etching depth sequence, performing multiple etching shielding etching segmentation according to the limit single etching constraint, and generating first multiple etching result; continuing to extract second etching depth from the etching depth sequence, performing multiple etching shielding etching segmentation based on the first multiple etching result according to the limit single etching constraint, generating second multiple etching result, and connecting the second multiple etching result to the first multiple etching result until each etching depth in the etching depth sequence is traversed, and obtaining global multiple etching result; extracting etching position of each time from the global multiple etching result, generating exposure development parameters, and identifying etching parameters according to etching time corresponding to the limit single etching constraint and etching liquid spraying amount curve changing with etching time, and generating etching control parameters of each time.

5. The method for high precision etching optimization of metal shadow masks of claim 4, wherein, Generating the second multiple etching result comprises: Identify a second residual depth which is not covered by the first sub-etching result, perform sub-occlusion etching segmentation on the second residual depth according to the limit single-etching constraint to generate the second sub-etching result.

6. The method for high precision etching optimization of metal shadow masks of claim 4, wherein, When connecting the second sub-etching result to the first sub-etching result, perform marking of each etching position in the etching depth distribution map on the first sub-etching result, and perform marking of other etching positions except the position corresponding to the first etching depth on the second sub-etching result.

7. The method for high precision etching optimization of metal shadow masks of claim 4, wherein, Identify etching parameters according to the etching time corresponding to the limit single-etching constraint and the etching liquid spraying amount curve varying with etching time, and generate etching control parameters for each etching time, including: Analyze whether the etching depth for each etching time in the global sub-etching result is consistent with the limit single-etching constraint; If yes, generate corresponding etching control parameters according to the etching time corresponding to the limit single-etching constraint and the etching liquid spraying amount curve varying with etching time; If no, perform gain matching through a preset gain control module, and generate corresponding etching control parameters by adjusting the etching time corresponding to the limit single-etching constraint and the etching liquid spraying amount curve varying with etching time according to the matched gain.

8. The method for high precision etching optimization of metal shadow masks of claim 7, wherein, The gain control module includes a depth comparator and an automatic gain controller; The deviation of the etching depth for each etching time from the depth of the limit single-etching constraint is input to the automatic gain controller through the depth comparator, and the automatic gain controller matches the corresponding gain according to the deviation; The automatic gain controller is trained and constructed by sample deviation data and sample control gain.

9. A high precision etching optimization device for metal shadow masks, characterized in that The device is used to perform the high-precision etching optimization method for metal shadow plates as claimed in any one of claims 1-8, and the device includes: A depth distribution map generation module for reading etching pattern information, performing etching depth marking at different etching positions, and generating an etching depth distribution map; A behavior simulation module for collecting etching liquid information and metal plate substrate information, performing lateral corrosion behavior simulation according to a preset sidewall precision requirement, and establishing a limit single-etching constraint; A segmentation module for performing sub-occlusion etching segmentation based on the etching depth distribution map according to the limit single-etching constraint, and generating sub-etching parameters, including exposure development parameters and etching control parameters for each etching time; An etching control module for performing sub-etching control on the metal plate substrate based on the sub-etching parameters.

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