Inspection device

Abstract

The surface temperature of an object to be inspected can be measured with high precision. Provided is an inspection device for inspecting an object to be inspected by bringing an electrode terminal of the object to be inspected into contact with a conductive contact and electrically connecting a tester and the object to be inspected, the inspection device being characterized by being provided with: an object to be inspected supporting section for supporting the object to be inspected; an infrared light-receiving unit that receives infrared rays radiated from at least a subject as a temperature measurement object, said infrared light-receiving unit having the subject as a temperature measurement object; and a temperature measurement device having a temperature conversion function for converting the infrared rays from the infrared light receiving unit into the temperature of the temperature measurement object, and the test object supporting unit has a black body in the peripheral region or in the vicinity of the peripheral edge of the test object supporting unit.

Description

TECHNICAL FIELD

[0001] The present application relates to an inspection apparatus, for example, which can be applied to a semiconductor inspection apparatus (hereinafter also referred to as "inspection apparatus") for inspecting electrical characteristics of semiconductor integrated circuits (hereinafter also referred to as "semiconductor devices") formed on a semiconductor wafer (hereinafter also referred to as "wafer"). BACKGROUND

[0002] In a manufacturing process of semiconductor devices formed on a wafer, it is necessary to check whether or not electrical characteristics of the semiconductor devices satisfy a prescribed value, and a semiconductor inspection apparatus mounted with a probe card is used in this checking.

[0003] For example, a probe card having a plurality of probes is connected to a test head, and terminals of semiconductor devices on a wafer are brought into contact with the probes. Then, a tester supplies inspection signals to each semiconductor device on the wafer via the probes, and the tester acquires signals in response from each semiconductor device, thereby performing electrical characteristic inspection of the semiconductor devices.

[0004] In recent years, it is required to check whether or not electrical characteristics of semiconductor devices satisfy a prescribed value even in a prescribed temperature environment, and it is necessary to accurately and highly precisely measure a surface temperature of a wafer (semiconductor devices) in the checking.

[0005] Conventionally, as a temperature measuring apparatus for measuring a surface temperature of a wafer, there is an apparatus described in Patent Document 1, which measures an infrared radiation amount radiated from a wafer using an infrared sensor (see Patent Document 1).

[0006] Here, the temperature measuring apparatus needs to be corrected using an emissivity of a black body. A correction method of the conventional temperature measuring apparatus is, for example, to take the temperature measuring apparatus off from a probe, and to correct it based on a radiation temperature of a black body furnace or the like. Alternatively, for example, a wafer-shaped black body is placed on a chuck of the probe, a change in a measured value of the infrared radiation amount is monitored, and it is confirmed that the measured value is within a certain range. When the measured value deviates from the certain range, the accuracy is confirmed again using the wafer-shaped black body, and if necessary, correction is performed again. In this way, the temperature of the wafer is measured in a non-contact manner using the infrared sensor. PRIOR ART DOCUMENT PATENT DOCUMENT

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-56253 SUMMARY PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] However, in the case where the surface temperature of a wafer (semiconductor device) under inspection is measured with a non-contact temperature sensor, when an operating current is applied to the semiconductor device, the semiconductor device generates heat, and the heat is further transferred to an electric signal probe in contact with a terminal of the semiconductor device, so that the temperature of the semiconductor device changes, making it difficult to stabilize.

[0009] Therefore, if it is intended to measure the surface temperature of a wafer under inspection with high precision using an existing temperature measuring device, the following problems arise.

[0010] Infrared rays generated from the surface of the semiconductor device are transferred to the temperature measuring device via an optical path formed by an optical fiber, a lens barrel, a lens, or the like, but the transmittance deteriorates due to the fitting state or deterioration of the optical path member, which can affect the measurement precision.

[0011] In addition, if the temperature of the optical path itself rises, infrared rays are generated from the optical path itself, so it is possible to be affected by the infrared rays.

[0012] Further, there is a problem that the amount of infrared radiation from the wafer changes depending on the state such as the color or roughness of the surface of the wafer as a measurement target.

[0013] In addition, if the distance from the light receiving portion (optical fiber tip or the like) of the optical fiber to the semiconductor device as a measurement target changes, the amount of light changes due to a change in the angle of incidence of infrared rays to the light receiving portion.

[0014] In view of the above problems, the present application provides an inspection device capable of measuring the surface temperature of a wafer under inspection with high precision. Technical means to solve the problem

[0015] To solve the above problems, the inspection device of the present application brings an electrode terminal of an object under inspection into contact with a conductive contact, electrically connects a tester and the object under inspection, and thereby inspects the object under inspection, characterized by comprising: (1) an object under inspection support portion that supports the object under inspection; (2) an infrared light receiving portion that receives infrared rays radiated from the object under inspection as a temperature measurement target; and (3) a temperature measuring device that has a temperature conversion function of converting the infrared rays from the infrared light receiving portion into the temperature of the temperature measurement target, (4) the object under inspection support portion has a black body at the peripheral region or the vicinity of the peripheral region of the object under inspection support portion. Effects of the invention

[0016] According to the present application, it is possible to efficiently perform calibration of a non-contact temperature meter that measures the surface temperature of an object under inspection conveyed into an inspection device and an object placement table on which the object under inspection is placed. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 This is an overall configuration diagram showing the overall structure of the inspection device according to the first embodiment. Figure 2 This is a top view showing the configuration of the examination table of the first embodiment. Figure 3 This is a flowchart (one of the flowcharts) showing the operation of the calibration process of the temperature measuring device of the inspection device in the first embodiment. Figure 4 This is an explanatory diagram illustrating the positional movement of the black body in the first embodiment. Figure 5 This is a flowchart (second part) showing the operation of the calibration process of the temperature measuring device of the inspection device in the first embodiment. Figure 6 This is an overall configuration diagram showing the overall structure of the inspection device according to the second embodiment. Figure 7 This is an explanatory diagram illustrating the distance measurement performed by the length measuring device of the second embodiment. Figure 8 This is a flowchart illustrating the calibration process of the temperature measuring device in the inspection apparatus of the second embodiment. Figure 9 This is a graph showing the relationship between the distance between the wafer surface and the infrared light-receiving part and the correction temperature in the second embodiment. Detailed Implementation

[0018] (A) First Embodiment Hereinafter, the first embodiment of the inspection device of the present invention will be described in detail with reference to the accompanying drawings.

[0019] In the accompanying drawings of the embodiments, the same symbols are used to label the same parts. However, it should be noted that the drawings are schematic, and the thickness ratios of the constituent elements, etc., differ from reality. Furthermore, the drawings also include parts with different dimensional relationships and ratios. In this embodiment, apparatus and methods for embodying the technical concept of the present invention are illustrated, rather than specifying the materials, shapes, structures, arrangements, etc., of the constituent parts as described in the embodiments.

[0020] (A-1) Configuration of the first embodiment (A-1-1) Overall Composition Figure 1 This is an overall configuration diagram showing the overall structure of the inspection device according to the first embodiment.

[0021] exist Figure 1 In the first embodiment, the inspection device 1 includes a temperature measuring device 10, a detector 50, and a test head 13.

[0022] The probe 50 has the chuck 40 that places the wafer 20 and has a temperature adjustment function capable of adjusting the temperature of the wafer 20 to a high temperature or a low temperature, and a θ-axis stage 51, a Z-axis stage 52, a Y-axis stage 53, and an X-axis stage 54.

[0023] The inspection device 1 inspects the electrical characteristics of each semiconductor device (hereinafter also referred to as "inspection object") formed on the wafer 20. The inspection device 1 is electrically connected to the probe card 14 via the electrical connection unit 18 on the second face (for example, the lower face) of the test head 13.

[0024] At the time of inspection, the electrode terminals of the semiconductor devices are brought into electrical contact with each of the probes 17 of the probe card 14. Then, the inspection device 1 supplies an electrical signal from the tester to each semiconductor device on the wafer 20 via the probes, and acquires a signal in response from each semiconductor device. Thus, the tester performs characteristic inspection of the semiconductor devices.

[0025] The temperature measuring device 10 is connected to the optical fiber 12, and the optical fiber 12 is connected to the infrared light receiving section 16. The infrared light receiving section 16 receives infrared light radiated from a temperature measurement object (hereinafter also simply referred to as "measurement object"), and the temperature measuring device 10 acquires the infrared light radiated from the measurement object via the optical fiber 12. The temperature measuring device 10 converts the amount of infrared light input from the infrared light receiving section 16 into a temperature, and measures the surface temperature of the measurement object. Thus, it is possible to non-contact measure the surface temperature of the measurement object.

[0026] In addition, the temperature measuring device 10 periodically or as needed appropriately measures the surface temperature of the black body 30 placed on the first face (for example, the upper face) of the chuck 40, and performs correction of the measured temperature of the temperature measuring device 10.

[0027] As a functional constituent element, the temperature measuring device 10 has a temperature conversion section 101, a temperature correction section 102, and a temperature display section 103.

[0028] The temperature conversion section 101 acquires the infrared light received by the infrared light receiving section 16 via the optical fiber 12, and converts the amount of infrared light radiated from the measurement object into a temperature.

[0029] The temperature correction section 102 takes the black body 30 disposed in the peripheral region or the vicinity of the periphery of the chuck 40 as the measurement object, switches the temperature of the chuck 40 to a temperature required for measurement, and converts the amount of infrared light radiated from the black body 30 acquired from the infrared light receiving section 16 into a temperature at each measurement temperature. In addition, the temperature correction section 102 prepares a correction table in advance based on the amount of infrared light radiated from the black body 30 and the temperature.

[0030] The temperature correction section 102 measures the temperature of the black body 30 based on the amount of infrared radiation received by the infrared light receiving section 16 on a regular basis or as needed. The temperature correction section 102 corrects the measurement results of the temperature measurement device 10 with reference to a correction table prepared in advance and the temperature based on the amount of infrared radiation of the black body 30. Thus, periodic calibration of the temperature measurement device 10, abnormality detection of the infrared light receiving section 16 and the temperature measurement device 10, and the like can be performed.

[0031] The temperature display section 103 displays the temperature derived by the temperature conversion section 101 and the temperature corrected by the temperature correction section 102. For example, the temperature display section 103 can use a display section such as a liquid crystal display.

[0032] In addition, the temperature measurement device 10 has a function of inputting the amount of infrared radiation from the infrared light receiving section 16, converting the inputted amount of infrared radiation into a temperature, displaying the converted temperature, or converting the amount of infrared radiation into an electric signal and outputting the electric signal to another device.

[0033] The test head 13 is connected to the probe card 14 via the electric connection unit 18 on the second surface (e.g., the lower surface). The test head 13 is connected to a tester not shown, and transmits and receives electric signals between the tester and the probe card 14. Thus, the electric characteristics of the semiconductor devices on the wafer 20 can be inspected.

[0034] The electric connection unit 18 is a mounting unit that mounts the probe card 14 on the test head 13, and electrically connects the test head 13 and the probe card 14.

[0035] The probe card 14 contacts the probe 17 to the electrode terminal of the semiconductor device formed on the wafer 20, supplies an electric signal to the semiconductor device via the probe 17, and responds to a response signal from the semiconductor device via the probe 17. The probe card 14 is an example of an electric connection device that electrically connects between the tester and the semiconductor device on the wafer 20. The probe card 14 is provided with the probe assembly 15 having a plurality of probes 17 on the second surface (e.g., the lower surface) side.

[0036] The probe assembly 15 is an assembly provided with a plurality of probes 17 on the second surface (e.g., the lower surface) side of the probe card 14.

[0037] The probe 17 is an electrically conductive contact that forms an electric path to the electrode terminal of the semiconductor device. The type of the probe 17 is not particularly limited, and for example, a cantilever type probe or a vertical type probe can be used.

[0038] In addition, in the present embodiment, a case is exemplified in which the probe 17 is a conductive contact that forms an electrical path with the electrode terminal of the semiconductor device, but in a case in which the semiconductor device is an optical semiconductor, the probe 17 can include, in addition to the probe 17 being a conductive contact, an optical probe (for example, an optical fiber) that transmits and receives an optical signal between the optical input / output section of the optical semiconductor.

[0039] The chuck 40 fixes the wafer 20 on a first surface (also referred to as "chuck top" or "chuck stage") of the chuck 40 and moves in the XYZθ-axis directions. In addition, the chuck 40 is provided with one or more blackbodies 30 on the upper surface of the chuck 40. The method of providing the blackbodies 30 will be described later.

[0040] The chuck 40 has a chuck temperature sensor (also referred to as "first temperature sensor") 131 that detects the temperature of the chuck 40, a blackbody placement portion temperature sensor (also referred to as "second temperature sensor") 132 that detects the temperature of the blackbody placement portion 41 on which the blackbody 30 is placed, and a temperature signal transmitting and receiving portion 133 that is an interface with the temperature measuring device 10.

[0041] The temperature signal transmitting and receiving portion 133 transmits a chuck temperature signal from the chuck temperature sensor 131 and a blackbody placement portion temperature signal from the blackbody placement portion temperature sensor 132 to the temperature measuring device 10.

[0042] The θ-axis stage 51, the Z-axis stage 52, the Y-axis stage 53, and the X-axis stage 54 are movement driving mechanisms that move the chuck 40.

[0043] (A-1-2) Detailed Configuration of the Chuck 40 Figure 2 is a plan view that shows the configuration of the chuck 40 of the first embodiment in plan view.

[0044] As shown in Figure 2 , the shape of the wafer placement surface (upper surface shape: that is, the shape of the chuck top) of the chuck 40 is substantially circular, and the size of the chuck 40 is slightly larger than the size of the wafer 20.

[0045] The blackbody 30 whose temperature and infrared radiation amount are clear is provided in advance on the peripheral portion 42 of the wafer placement surface of the chuck 40.

[0046] Here, in the example of Figure 2 , a case is shown in which a total of five blackbodies 30 are provided, four of which are provided on the peripheral portion 42 of the wafer placement surface of the chuck 40 and one of which is provided on the blackbody placement portion 41 provided on the peripheral portion 42. Regarding the four blackbodies 30, they are disposed at equal intervals from each other on the peripheral portion 42 of the chuck 40.

[0047] In addition, the number of black bodies 30 is not limited to this, and one black body 30 can be provided on the chuck 40, or two or more black bodies 30 can be provided. The black body 30 is used as a reference for the amount of infrared radiation. In addition, when the temperature measuring device is calibrated, the black body 30 is not particularly limited as long as it can be moved to the position of the infrared light receiving portion 16. In addition, a plurality of black body placement portions 41 can be provided, and a black body 30 can be provided for each black body placement portion 41.

[0048] The black body 30 is a thermal radiator whose temperature and the amount of infrared radiation are known in advance. For example, the black body 30 can use a black body in the form of a sticker (black body sticker), a black body to which black body paint is applied, or the like.

[0049] The temperature correction portion 102 converts the amount of infrared radiation emitted by the black body 30 into a temperature when the measurement accuracy of the temperature measuring device 10 is confirmed, an abnormality in the measurement accuracy, a measurement abnormality of the infrared sensor, or the like occurs, and creates a correction table using the result. Then, the temperature signal output value of the temperature measuring device 10 is corrected with reference to the correction table.

[0050] In other words, the amount of infrared radiation of the black body 30 is measured in an inspection or periodically, a temperature is derived from the amount of infrared radiation, and the temperature signal output value of the temperature measuring device 10 can be corrected by comparing the temperature with the correction table.

[0051] Since the black body 30 is provided on the wafer placement surface of the chuck 40, the black body 30 can be moved to the position of the infrared light receiving portion 16 even in an inspection, and thus the temperature signal output value of the temperature measuring device 10 can be corrected without replacing the wafer 20.

[0052] In addition, the black body 30 does not have to be an ideal perfect black body, and something that is considered to be a black body can be used.

[0053] (A-2) Action of the First Embodiment (A-2-1) First Correction Method Figure 3 is a flowchart showing the action of the correction process of the temperature measuring device 10 of the inspection device 1 of the first embodiment.

[0054] Here, an example of periodic correction of the temperature measuring device 10, for example, as a fiber-type non-contact thermometer will be described. In addition, the order of the correction process is not limited to Figure 3 .

[0055] [Step S101] First, the θ-axis stage 51, the Z-axis stage 52, the Y-axis stage 53, and the X-axis stage 54, which are moving drive mechanisms, are driven, and the wafer 20 is moved to the position of the infrared light receiving portion 16. Figure 4As shown, the moving mechanism moves the black body 30 disposed in the peripheral region of the wafer placement surface of the chuck 40, near the periphery, to the position of the infrared light receiving section 16 (step S101).

[0056] [Step S102] Next, the temperature of the chuck 40 is set to the temperature required for measurement (step S102). For example, in the case of this embodiment, the temperature is set to "-40°C", "25°C", and "125°C".

[0057] [Step S103] The temperature of the chuck 40 becomes the set temperature, and the infrared light receiving section 16 receives the infrared light radiated from the black body 30 and transmits the infrared light to the temperature measuring device 10 via the optical fiber 12. In the temperature measuring device 10, the amount of infrared light radiation from the black body 30 is converted to a temperature based on the infrared light from the infrared light receiving section 16 (step S103).

[0058] [Step S105] Next, it is determined whether or not the measurement at all temperatures required for measurement (for example, -40°C, 25°C, and 125°C) is completed (step S105).

[0059] Then, in the case where the measurement is completed (step S105 / YES), the process proceeds to step S106, and in the case where the measurement is not completed (step S105 / NO), the process returns to step S102, the set temperature of the chuck 40 is changed, and the process is continued.

[0060] [Step S106] Based on the amount of infrared light radiation from the black body 30 and the derived temperature, a correction table (hereinafter also referred to as "first correction table") is created (step S106).

[0061] For example, in the case where a prior relationship table exists in advance based on the relationship between the temperature and the amount of infrared light radiation from the black body 30, the correction table is created by comparing this prior relationship table with the measurement results obtained in S102, S103, and S105.

[0062] [Step S111] The temperature measuring device 10 compares the correction table with the measurement results of the amount of infrared light radiation from the black body 30 measured periodically, and detects the temporal change of the infrared light sensor and the change in the amount of infrared light radiation from the wafer based on the comparison results (step S111).

[0063] (A-2-2) Second Correction Method Figure 5 is a flowchart showing the operation of the correction process of the temperature measuring device 10 of the inspection device 1 of the first embodiment (part 2).

[0064] Here, an example of correction of a value after temperature conversion of the amount of infrared radiation equivalent to the surface temperature of the semiconductor device on the wafer, received by the temperature measuring device 10, for example, in the inspection, will be described. The order of the correction process is not limited to Figure 5 .

[0065] Further, the second correction method is intended to perform correction without taking the wafer 20 as a measurement target from the chuck 40.

[0066] For example, when the inspection of the electrical characteristics of the semiconductor device on a certain wafer 20 is performed, the correction process is implemented without replacing the wafer 20 and without detaching the temperature measuring device 10 from the detector 50. Further, for example, the correction of the amount of infrared radiation using the black body 30 can be performed during the period until the inspection of the certain wafer 20 ends and the next wafer 20 is placed on the chuck 40.

[0067] [Steps S201, S202] First, the reference wafer is placed on the chuck 40 (step S201), and the temperature of the chuck 40 is set to the temperature required for measurement (step S202).

[0068] For example, in this embodiment, the case where the temperature is set to "-40°C", "25°C", and "125°C" is exemplified, but the value of the temperature is not limited thereto, and the number of temperature settings is not limited to three.

[0069] [Step S203] The θ-axis stage 51, the Z-axis stage 52, the Y-axis stage 53, and the X-axis stage 54, which are the movement driving mechanisms, are driven to move the black body 30 on the chuck 40 to the position of the infrared light receiving section 16 (step S203).

[0070] [Step S204] The infrared light receiving section 16 receives the infrared light radiated from the black body 30 and supplies it to the temperature measuring device 10. In the temperature measuring device 10, the amount of infrared radiation of the black body 30 is converted to the temperature based on the infrared light from the infrared light receiving section 16 (step S204).

[0071] [Step S206] Next, a certain semiconductor device formed on the reference wafer is moved to the position of the infrared light receiving section 16 (step S206) as a reference device. The reference device is an arbitrary device (semiconductor device) on the reference wafer.

[0072] [Step S207] The infrared light receiving section 16 receives infrared light from the reference device and supplies it to the temperature measuring device 10. In the temperature measuring device 10, the amount of infrared light radiation from the reference device is converted into temperature based on the infrared light from the infrared light receiving section 16 (step S207).

[0073] [Step S209] Next, it is determined whether or not the measurement at all temperatures required for the measurement (for example, -40°C, 25°C, 125°C) is completed (step S209).

[0074] Then, in the case where the measurement is completed (step S209 / YES), the process shifts to step S210, and in the case where it is not completed (step S209 / NO), the process returns to step S202, the set temperature of the chuck 40 is changed, and the process is continued.

[0075] [Step S210] In the temperature measuring device 10, a correction table (hereinafter also referred to as "2nd correction table") is created, which indicates the relationship between the amount of infrared light radiation from the black body 30 and the temperature signal value at each set temperature, and the relationship between the amount of infrared light radiation from the reference device and the temperature signal value.

[0076] [Step S216] In the inspection, any one of the plurality of black bodies 30 is moved under the infrared light receiving section 16, the infrared light receiving section 16 receives infrared light radiated from the black body 30, and transmits the infrared light to the temperature measuring device 10. Then, the temperature measuring device 10 converts the amount of infrared light radiation from the black body 30 into temperature. In addition, if it is in the inspection, the temperature of the black body 30 can also be measured periodically.

[0077] Using the correction table created in S210, the amount of infrared light radiation from the black body 30 and the temperature measured in the inspection, the temporal change of the infrared light receiving section 16 as an infrared light sensor, and the change in the amount of infrared light radiation from the wafer are detected (step S216).

[0078] (A-3) Effects of the 1st Embodiment As described above, conventionally, when the correction of the non-contact thermometer is performed, the non-contact thermometer is removed from the probe, or the correction is performed using a black body wafer for correction. However, according to the 1st embodiment, by providing the black body on the chuck, the correction can be performed by measuring the amount of radiation from the black body in the inspection or periodically. As a result, the burden of complicated processing can be reduced, and the wafer surface temperature can be measured.

[0079] In addition, according to the 1st embodiment, since the correction can also be performed in the inspection of the wafer (semiconductor device), the wafer surface temperature can be measured correctly.

[0080] (B) Second Embodiment Next, a second embodiment of the inspection apparatus of the present application will be described with reference to the drawings.

[0081] (B-1) Configuration of the Second Embodiment Figure 6 is a general configuration view showing the general configuration of the inspection apparatus of the second embodiment.

[0082] In Figure 6 , the inspection apparatus 1A of the second embodiment, like the first embodiment, has, in addition to the temperature measuring apparatus 10, the probe 50, and the test head 13, a non-contact length measuring apparatus 61 that measures the distance between the light entrance surface of the infrared light receiving section 16 and the first surface (e.g., the upper surface) of the wafer 20, and a transmission path 62 that transmits the distance information (sensing data) of the non-contact length measuring apparatus 61 to the temperature measuring apparatus 10.

[0083] Further, the temperature measuring apparatus 10 of the second embodiment has a temperature conversion section 101, a temperature correction section 102, and a temperature display section 103.

[0084] Figure 7 is an explanatory view showing the distance measurement by the non-contact length measuring apparatus 61 of the second embodiment.

[0085] The non-contact length measuring apparatus 61 measures the distance to the object in a non-contact manner by sending light to the length measurement object and receiving the reflected light.

[0086] For example, as Figure 7 shown, the light entrance section (end section) of the infrared light receiving section 16 is disposed opposite the semiconductor device on the wafer 20, and the position of the light entrance section of the infrared light receiving section 16 becomes the reference in the measurement of the infrared radiation amount.

[0087] The position of the light entrance section (end section) of the infrared light receiving section 16 and the position of the end section of the non-contact length measuring apparatus 61 are known in advance, and the distance (distance in the Z-axis direction; height) between the end section of the non-contact length measuring apparatus 61 and the light entrance section of the infrared light receiving section 16 is set to "W2".

[0088] Further, in the case where the non-contact length measuring apparatus 61 takes the upper surface of the wafer 20 as the object, the distance (distance in the Z-axis direction; height) between the end section of the non-contact length measuring apparatus 61 and the upper surface of the wafer 20 is set to "W1".

[0089] (B-2) Operation of the Second Embodiment Figure 8 is a flowchart showing the operation of the correction processing of the temperature measuring apparatus 10 of the inspection apparatus 1A of the second embodiment.

[0090] Figure 8 S201 to S204, S206, S207, S209, S210, and S216 in FIG. 20 are processes explained in the first embodiment Figure 4 in the first embodiment. These processes have been explained in the first embodiment, and thus the explanation of the processes of S301 to S302 in FIG. 31 is referred to. Figure 4

[0091] [Step S301] The distance data from the non-contact length measuring device 61 is transmitted to the temperature correction section 102 of the temperature measuring device 10 (step S301).

[0092] Here, an example of a method of deriving the distance between the non-contact length measuring device 61 and the upper surface of the wafer 20 is explained.

[0093] For example, the distance (distance in the Z-axis direction; height) W2 between the end portion of the non-contact length measuring device 61 and the light entrance portion of the infrared light receiving portion 16 is set in advance. Thus, by subtracting W2 from the distance W1 from the non-contact length measuring device 61 to the wafer 20, the distance "W1-W2" between the light entrance portion (end portion) of the infrared light receiving portion 16 and the upper surface of the wafer 20 is derived.

[0094] [Step S302] The temperature correction section 102 refers to the relationship between the distance to the wafer 20 and the correction temperature set in advance, and derives the correction temperature corresponding to the distance (W1-W2) between the light entrance portion (end portion) of the infrared light receiving portion 16 and the upper surface of the wafer 20 (step S302).

[0095] For example, assume that the relationship between the distance to the wafer 20 and the correction temperature illustrated in FIG. 22 exists. Figure 9 The temperature correction section 102 refers to the relationship between the distance to the wafer 20 and the correction temperature set in advance, and derives the correction temperature corresponding to the distance (W1-W2) between the light entrance portion (end portion) of the infrared light receiving portion 16 and the upper surface of the wafer 20 (step S302). Figure 9 The temperature correction section 102 refers to the relationship between the distance to the wafer 20 and the correction temperature set in advance, and derives the correction temperature corresponding to the distance (W1-W2) between the light entrance portion (end portion) of the infrared light receiving portion 16 and the upper surface of the wafer 20 (step S302).

[0096] (B-3) Effects of the Second Embodiment As described above, according to the second embodiment, the effects of the first embodiment can be obtained.

[0097] Further, since the distance between the light entrance portion (end portion) of the infrared light receiving portion and the upper surface of the wafer can vary the amount of infrared light incident to the infrared light receiving portion, according to the second embodiment, the surface temperature of the wafer can be corrected considering the correction value corresponding to the distance. As a result, a wafer surface temperature with higher precision can be provided. ​

[0098] (C) Other Embodiments According to the above-described first and second embodiments, the following functions can be achieved.

[0099] (C-1) The correction can be performed at any time according to a correction value based on data of a non-contact thermometer that uses a black body furnace for correction performed at the time of shipment of the inspection device, periodic correction, and the like. However, variations in transmittance due to the fitting state or deterioration of an optical path (optical fiber, lens barrel, lens, and the like) can occur.

[0100] In contrast, according to the present embodiment, the inspection of a reference light emitter (i.e., a black body + a certain temperature) in an actual use environment, the two-time correction, the wafer chuck in which a black body is provided on a part of the top surface of the wafer chuck, or the wafer chuck in which a black body is separately provided, can have the function of performing the two-time correction such that the difference in the amount of light emission of each temperature band is a certain value or less.

[0101] (C-2) In the device to be measured, the following function is provided: by measuring the difference between the value of the temperature sensor built into the wafer chuck at the time when the most average finished wafer or the wafer first used as a reference is subjected to temperature by the wafer chuck or the like and the value of the wafer chuck surface temperature measured, the measurement error that differs depending on the design of the actual workpiece or the like is corrected.

[0102] (C-3) The function of collecting in advance data on temperature variations caused by the distance between the temperature measurement target and the infrared light receiving portion, monitoring the distance information at any time, and adjusting the correction amount according to the obtained distance information is provided. In addition, the distance information required for the correction can be obtained from a device that performs positioning in the Z-axis direction, or a height sensor can be provided around the infrared light receiving portion. Explanation of Symbols

[0103] 1 and 1A: inspection device, 10: temperature measurement device, 12: optical fiber, 13: test head, 14: probe card, 15: probe assembly, 16: infrared light receiving portion, 17: probe, 18: electrical connection unit, 20: object to be inspected, 30: black body, 40: chuck, 41: black body placement portion, 42: peripheral portion, 50: detector, 51: θ-axis stage, 52: Z-axis stage, 53: Y-axis stage, 54: X-axis stage, 61: non-contact length measuring device, 62: signal transmission path, 101: temperature conversion portion, 102: temperature correction portion, 103: temperature display portion.

Claims

1. An inspection apparatus which brings an electrode terminal of an object to be inspected into contact with a conductive contact, electrically connects a tester and the object to be inspected, and thereby inspects the object to be inspected, the inspection apparatus characterized by comprising: an object to be inspected support portion which supports the object to be inspected; an infrared light receiving portion which receives infrared light radiated from the object to be inspected, with the object to be inspected serving as at least a temperature measurement target object; and a temperature measuring apparatus which has a temperature conversion function of converting the infrared light from the infrared light receiving portion into a temperature of the temperature measurement target object, wherein the object to be inspected support portion has a black body in a peripheral edge region or a vicinity of a peripheral edge of the object to be inspected support portion.

2. The inspection apparatus according to claim 1, wherein the temperature measuring apparatus has a temperature correction portion which acquires an amount of infrared light radiation of the black body from the infrared light receiving portion, with the black body disposed in the peripheral edge region or the vicinity of the peripheral edge of the object to be inspected support portion serving as the temperature measurement target object, and corrects the converted temperature in accordance with the amount of infrared light radiation of the black body.

3. The inspection apparatus according to claim 1, wherein a distance measurement portion which measures a distance between the object to be inspected supported by the object to be inspected support portion and the infrared light receiving portion is provided, and the temperature correction portion performs temperature correction corresponding to the distance between the object to be inspected and the infrared light receiving portion, with reference to a relationship between the distance and the temperature between the object to be inspected and the infrared light receiving portion set in advance. ​ ​ ​ ​ ​ ​ ​ ​

Images