Photoresist uniformizing method and electronic equipment

Abstract

The invention discloses a photoresist uniformizing method and electronic equipment. The photoresist uniformizing method comprises the following steps: coating a photoresist solution on the surface of a wafer according to a preset spiral track by adopting a gluing head; driving the wafer to rotate so that the glue solution is uniformly distributed on the surface of the wafer; wherein the viscosity value eta of the glue solution is obtained in the coating process, and the moving speed v of the glue coating head, the glue solution extrusion flow Q and the screw pitch p of the spiral track are controlled according to the viscosity value eta of the glue solution. According to the invention, uniform spreading of the high-viscosity photoresist can be realized, the defect rate is reduced, and the process stability and efficiency are improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor manufacturing, and particularly relates to a photoresist uniform coating method and electronic equipment. BACKGROUND

[0002] In a photoetching process, uniform coating of photoresist is a key prerequisite for ensuring the accuracy of pattern transfer. For high-viscosity photoresist, due to its poor fluidity, shear sensitivity and other characteristics, the traditional uniform coating process (such as the static drop coating-high speed rotation method) has significant defects, and it is difficult to adapt to the rheological properties of high-viscosity photoresist, which restricts its application in thick photoresist etching, high aspect ratio structure preparation and other fields.

[0003] Therefore, in view of the above technical problems, it is necessary to provide a photoresist uniform coating method and electronic equipment. SUMMARY

[0004] The application aims to provide a photoresist uniform coating method and electronic equipment, which can realize uniform spreading of high-viscosity photoresist, reduce the defect rate, and improve the process stability and efficiency.

[0005] To achieve the above-mentioned purpose, the technical scheme provided by a specific embodiment of the application is as follows:

[0006] A photoresist uniform coating method, the photoresist uniform coating method comprising:

[0007] applying photoresist solution to the wafer surface according to a preset spiral trajectory using a coating head;

[0008] driving the wafer to rotate so that the solution is uniformly distributed on the wafer surface;

[0009] wherein the viscosity value η of the solution is obtained during the coating process, and the moving speed v of the coating head, the extrusion flow rate Q of the solution and the pitch p of the spiral trajectory are controlled according to the viscosity value η of the solution.

[0010] In one or more embodiments of the application, the extrusion flow rate Q of the solution is controlled according to the viscosity value η of the solution, comprising:

[0011] obtaining the moving speed v of the coating head and the proportionality coefficient k according to the viscosity value η of the solution;

[0012] obtaining the extrusion flow rate Q of the solution according to the moving speed v of the coating head and the proportionality coefficient k, .

[0013] In one or more embodiments of the present application, the moving speed v of the glue head is controlled according to the viscosity value η of the glue solution, including: obtaining a viscosity interval in which the viscosity value η of the glue solution is located, judging whether the moving speed v of the glue head is in a corresponding speed interval, if yes, maintaining the current moving speed v of the glue head to coat the photoresist glue solution, and if no, gradually adjusting the moving speed v of the glue head according to a predetermined moving speed amplitude of the glue head until the moving speed v of the glue head is in the corresponding speed interval.

[0014] The pitch p of the spiral trajectory is controlled according to the viscosity value η of the glue solution, including: obtaining a viscosity interval in which the viscosity value η of the glue solution is located, judging whether the pitch p of the spiral trajectory is in a corresponding pitch interval, if yes, maintaining the current pitch p to coat the photoresist glue solution, and if no, gradually adjusting the pitch p according to a predetermined pitch amplitude until the pitch p is in the corresponding pitch interval.

[0015] The glue extrusion flow Q is controlled according to the viscosity value η of the glue solution, including: obtaining the viscosity value η of the glue solution, obtaining a viscosity interval in which the viscosity value η of the glue solution is located, judging whether the proportionality coefficient k is in a corresponding proportionality coefficient interval, if yes, maintaining the current glue extrusion flow Q to coat the photoresist glue solution, and if no, gradually adjusting the proportionality coefficient k according to a predetermined proportionality coefficient amplitude until the proportionality coefficient k is in the corresponding proportionality coefficient interval.

[0016] In one or more embodiments of the present application, when the viscosity interval is 1000-3000 mPa·s, the speed interval corresponding to the moving speed v of the glue head is 4-6 mm / s, the pitch interval corresponding to the pitch p is 1.5-2.0 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 3500-4000 μm·s / mm. 2

[0017] When the viscosity interval is 3000-6000 mPa·s, the speed interval corresponding to the moving speed v of the glue head is 3-5 mm / s, the pitch interval corresponding to the pitch p is 1.0-1.5 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 4000-4500 μm·s / mm. 2

[0018] When the viscosity interval is 6000-10000 mPa·s, the speed interval corresponding to the moving speed v of the glue head is 2-4 mm / s, the pitch interval corresponding to the pitch p is 0.5-1.0 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 4500-5000 μm·s / mm. 2

[0019] ​​​​In one or more embodiments of the present application, the viscosity value η of the glue solution is obtained at a set sampling frequency, it is judged whether the plurality of viscosity values η are all greater than the first threshold range corresponding to the current viscosity interval, if yes, the moving speed v of the glue head, the glue extrusion flow Q and / or the pitch p of the spiral track are gradually adjusted, if no, the current moving speed v of the glue head, the glue extrusion flow Q and the pitch p of the spiral track are maintained;

[0020] The viscosity value η of the glue solution is obtained at a set sampling frequency, it is judged whether the difference between the current viscosity value η and the last viscosity value η is greater than or equal to the first set threshold, if yes, the glue coating is paused, if no, the photoresist glue solution is continuously coated;

[0021] In the process of gradually adjusting the moving speed v of the glue head, the glue extrusion flow Q and / or the pitch p of the spiral track, a set time interval is set between the adjacent two adjustments.

[0022] In one or more embodiments of the present application, the predetermined pitch amplitude is less than or equal to 0.2 mm;

[0023] The predetermined glue head moving speed amplitude is less than or equal to 0.5 mm / s.

[0024] In one or more embodiments of the present application, during the driving of the wafer rotation, the rotation speed of the wafer is controlled, comprising:

[0025] In the first period, the rotation speed of the wafer is gradually increased from the initial rotation speed to the maximum target rotation speed;

[0026] In the second period, the rotation speed of the wafer is gradually decreased from the maximum target rotation speed to the end rotation speed.

[0027] In one or more embodiments of the present application, the first period includes a pre-spreading stage, a glue uniformizing stage and a thickness setting stage, wherein: in the pre-spreading stage, the wafer rotation speed is 50-200 rpm, and the duration is 5-10 s; in the glue uniformizing stage, the wafer rotation speed is 300-800 rpm, and the duration is 10-20 s; in the thickness setting stage, the wafer rotation speed is 800-2000 rpm, and the duration is 5-15 s;

[0028] In the second period, the end rotation speed is less than or equal to 50 rpm, and the rotation speed drop duration is 3-5 s.

[0029] In one or more embodiments of the present application, the photoresist glue uniformizing method further comprises: adjusting the surface energy of the wafer surface and / or preheating the wafer before coating the photoresist glue solution;

[0030] The photoresist uniform coating method further comprises: obtaining a viscosity value η of the photoresist solution based on a rotary rheometer sensor, and calibrating the rotary rheometer sensor based on a standard viscosity sample before coating the photoresist solution.

[0031] The photoresist uniform coating method further comprises: obtaining the viscosity value η of the photoresist solution at a set sampling frequency, and the sampling frequency is 10-100 Hz.

[0032] The photoresist uniform coating method further comprises: pre-processing the obtained viscosity value η to filter out invalid data and retain valid viscosity values η.

[0033] The photoresist uniform coating method further comprises: determining whether the viscosity value η exceeds a preset viscosity fitting range, if yes, triggering equipment shutdown protection, and if not, continuing to coat the photoresist solution.

[0034] Another aspect of the present application provides an electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor executes the program to implement the photoresist uniform coating method.

[0035] Compared with the prior art, the photoresist uniform coating method and the electronic device of the present application reduce the generation of air bubbles by adopting spiral trajectory coating of the photoresist solution, and dynamically adjust the coating parameters by combining the viscosity value of the photoresist solution obtained by real-time sampling, thereby significantly improving the film thickness uniformity and meeting the high-precision photoetching requirement.

[0036] The present application can adapt to photoresist of different viscosities without the need to greatly adjust the structure of the photoresist uniform coating device, and has strong compatibility. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments described in the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.

[0038] Figure 1 The flowchart of the photoresist uniform coating method in an embodiment of the present application;

[0039] Figure 2 The structural schematic diagram of the uniform coating device for implementing the photoresist uniform coating method in an embodiment of the present application;

[0040] Figure 3 The structural schematic diagram of the electronic device in an embodiment of the present application. DETAILED DESCRIPTION

[0041] In order for those skilled in the art to better understand the technical solutions in the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described in the following with reference to the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative labor should fall within the protection scope of the present disclosure.

[0042] As described in the background, in the photolithography process, uniform coating of photoresist is a key prerequisite to ensure the accuracy of pattern transfer. For high viscosity photoresist (usually refers to the photoresist with viscosity greater than 1000 mPa s), due to its poor flowability, shear sensitivity and other characteristics, the traditional uniform coating process (such as static drop coating-high speed rotation method) has significant defects:

[0043] 1. The spreading speed of the glue solution is slow, and a "bowl-shaped" distribution with thick center and thin edge is easy to form, and the film thickness uniformity deviation is usually more than ± 15%;

[0044] 2. The glue solution is easy to produce "flash" phenomenon when rotating at high speed, resulting in edge accumulation or wafer overflow waste;

[0045] 3. Bubbles or stripe defects are easy to occur in the glue solution due to uneven shear force, which affects the subsequent exposure and development effect;

[0046] 4. In order to achieve complete spreading, the rotation time needs to be prolonged or the rotation speed needs to be increased, resulting in low process efficiency and poor repeatability of photoresist thickness.

[0047] Therefore, the existing process is difficult to adapt to the rheological properties of high viscosity photoresist, which restricts its application in thick photoresist lithography, high aspect ratio structure preparation and other fields, and it is urgent to develop a specific uniform coating process.

[0048] In combination with Figure 1 As shown in the figure, in order to solve the above technical problems, the present disclosure provides a photoresist uniform coating method, specifically comprising:

[0049] S1, using a glue coating head to coat photoresist glue solution on the wafer surface according to a preset spiral trajectory, wherein the viscosity value η of the glue solution is obtained during the coating process, and the moving speed v of the glue coating head, the glue solution extrusion flow Q and the pitch p of the spiral trajectory are controlled according to the viscosity value η of the glue solution;

[0050] S2, driving the wafer to rotate, so that the glue solution is uniformly distributed on the wafer surface.

[0051] The present disclosure realizes uniform pre-distribution of photoresist glue solution by controlling the photoresist glue solution to be coated on the wafer surface in a spiral trajectory, solving the problem of uneven initial distribution of the traditional glue dispensing method.

[0052] The present disclosure obtains the viscosity value η of the glue solution in the coating process, and controls the moving speed v of the glue coating head, the glue solution extrusion flow Q and the pitch p of the spiral track in real time according to the viscosity value η of the glue solution, so as to ensure that the spiral track line formed by the photoresist glue solution is continuous and uniform, and the problem of poor flowability of high-viscosity photoresist is overcome, and the uniformity of the photoresist glue solution in the glue coating stage is further ensured.

[0053] Further, in an embodiment, the preset spiral track is in the shape of an Archimedes spiral.

[0054] In an embodiment, before coating the photoresist glue solution, the surface energy of the wafer surface is adjusted, and the wafer is preheated.

[0055] The material of the wafer can be a silicon wafer, a sapphire substrate, etc. According to the type of the photoresist glue solution to be coated and the material of the wafer, the wafer surface is cleaned, hydrophobically modified or hydrophilically modified to adjust the surface energy of the wafer surface. For example, the wafer surface is treated by hexamethyldisilazane (HMDS) to achieve hydrophobic modification, and the contact angle of the wafer surface is controlled to be 60°-80°.

[0056] In an embodiment, before coating the photoresist glue solution, the wafer is preheated. Specifically, the wafer temperature is preheated to 20-40°C, with a temperature error of ±1°C, so as to reduce the viscosity difference between the photoresist glue solution and the wafer and promote initial spreading.

[0057] It can be understood that high-viscosity photoresist has a shear thinning effect, that is, the viscosity of the photoresist glue solution changes dynamically during coating. In order to solve this technical problem, in an embodiment of the present disclosure, a rotary rheometer is used to set a sampling frequency to obtain the viscosity value η of the glue solution in real time, and the sampling frequency is 10-100 Hz. Based on the sampling result, the coating strategy is dynamically adjusted.

[0058] For example, the rotary rheometer uses an Anton Paar MCR series microprobe. The probe of the rotary rheometer is arranged beside the nozzle of the glue coating head and directly contacts the photoresist glue solution, so as to capture the dynamic viscosity change of the photoresist glue solution during shearing.

[0059] Further, before coating the photoresist glue solution, the rotary rheometer is calibrated based on a standard viscosity sample to ensure that the measurement error is ≤±3% and avoid accuracy deviation caused by long-term use. The standard viscosity sample can use calibration glue with a viscosity value of 1000 mPa·s, 5000 mPa·s or 10000 mPa·s.

[0060] It can be understood that the viscosity data collected by the rotary rheometer is not all valid, such as the instantaneous viscosity anomaly caused by bubbles, so the viscosity value η obtained in the embodiment of the present disclosure is pre-processed to screen out invalid data and retain valid viscosity values η.

[0061] Exemplarily, the rotary rheometer transmits real-time viscosity data to the process control center through industrial Ethernet, and the control center is built-in with a data filtering algorithm (such as a sliding average filter) to remove accidental fluctuation data and retain valid viscosity values η. Further, the rotary rheometer data delay control is within 50 ms to meet the response requirement of real-time parameter adjustment.

[0062] In an embodiment, the viscosity value η of the glue solution is obtained at the beginning of coating, the initial values of the glue head moving speed v, the glue solution extrusion flow rate Q and the pitch p of the spiral trajectory are set according to the viscosity value η of the glue solution, the wafer surface is coated with photoresist glue solution from the center to the edge of the wafer, and the viscosity value η of the glue solution is obtained in real time during the coating process. The glue head moving speed v, the glue solution extrusion flow rate Q and the pitch p of the spiral trajectory are adjusted in real time according to the viscosity value η of the glue solution.

[0063] In an embodiment, the glue solution extrusion flow rate Q is controlled according to the viscosity value η of the glue solution, including:

[0064] The glue head moving speed v and the proportional coefficient k are obtained according to the viscosity value η of the glue solution;

[0065] The glue solution extrusion flow rate Q is obtained according to the glue head moving speed v and the proportional coefficient k, .

[0066] In an embodiment, the glue head moving speed v is controlled according to the viscosity value η of the glue solution, including:

[0067] The viscosity interval in which the viscosity value η of the glue solution is located is obtained, it is judged whether the glue head moving speed v is in the corresponding speed interval, if yes, the current glue head moving speed v is maintained to coat the photoresist glue solution, if no, the glue head moving speed v is gradually adjusted according to the predetermined glue head moving speed amplitude until the glue head moving speed v is in the corresponding speed interval.

[0068] In an embodiment, the pitch p of the spiral trajectory is controlled according to the viscosity value η of the glue solution, including: obtaining the viscosity interval in which the viscosity value η of the glue solution is located, judging whether the pitch p of the spiral trajectory is in the corresponding pitch interval, if yes, the current pitch p is maintained to coat the photoresist glue solution, if no, the pitch p is gradually adjusted according to the predetermined pitch amplitude until the pitch p is in the corresponding pitch interval.

[0069] In an embodiment, the glue solution extrusion flow rate Q is controlled according to the viscosity value η of the glue solution, including: the glue solution extrusion flow rate Q is obtained according to the glue head moving speed v and the proportional coefficient k, , the viscosity interval of the viscosity value η of the glue solution is obtained, whether the proportional coefficient k is in the corresponding proportional coefficient interval is judged, if yes, the current glue solution extrusion flow Q is maintained to coat the photoresist glue solution, if not, the proportional coefficient k is gradually adjusted according to the predetermined proportional coefficient amplitude, until the proportional coefficient k is in the corresponding proportional coefficient interval.

[0070] Further, in the disclosure, the pitch p is negatively related to the viscosity value η, so that the pitch is matched with the spreading width, and the dynamic balance of the coating efficiency and the coating effect is ensured. The glue head moving speed v is negatively related to the viscosity value η, and the proportional coefficient k is positively related to the viscosity value η, so that the glue head moving speed v is dynamically matched with the glue solution extrusion flow Q, the continuity of the spiral trajectory is ensured, and the excessive accumulation of the glue solution in the spiral trajectory is avoided.

[0071] Specifically,

[0072] When the viscosity interval is 1000-3000 mPa·s, the speed interval corresponding to the glue head moving speed v is 4-6 mm / s, the pitch interval corresponding to the pitch p is 1.5-2.0 mm, and the proportional coefficient interval corresponding to the proportional coefficient k is 3500-4000 μm2·s / mm.

[0073] In this viscosity interval, the flowability of the photoresist glue solution is at a medium level, the pitch p can take a larger value to improve the coating efficiency. The glue head moving speed v is matched with the glue solution extrusion flow Q, the continuity of the glue line and the spreading foundation are taken into account, the glue line in the spiral trajectory can be prevented from being too thin to break, and the excessive accumulation of the glue solution can be avoided.

[0074] When the viscosity interval is 3000-6000 mPa·s, the speed interval corresponding to the glue head moving speed v is 3-5 mm / s, the pitch interval corresponding to the pitch p is 1.0-1.5 mm, and the proportional coefficient interval corresponding to the proportional coefficient k is 4000-4500 μm2·s / mm.

[0075] When the viscosity value η increases, the glue solution spreading width (which can be understood as the cross-sectional area of the glue line) decreases, and the pitch P needs to be reduced to prevent the track gap from being too large. At the same time, in this viscosity interval, by reducing the glue head moving speed v and increasing the proportional coefficient k, the cross-sectional area of the glue line is ensured, and the spiral trajectory can be effectively fused during subsequent rotation.

[0076] When the viscosity interval is 6000-10000 mPa·s, the speed interval corresponding to the glue head moving speed v is 2-4 mm / s, the pitch interval corresponding to the pitch p is 0.5-1.0 mm, and the proportional coefficient interval corresponding to the proportional coefficient k is 4500-5000 μm2·s / mm.

[0077] In the super high viscosity range, the flowability of the photoresist glue solution is poor and sensitive to shear force, so the pitch p can be controlled to the minimum value to ensure the dense and continuous glue lines. By further reducing the glue head moving speed v and increasing the proportion coefficient k, the glue amount per unit length of the glue line is increased, which avoids the "glue break" of the spiral trajectory and provides sufficient glue amount basis for the fusion of the glue lines in the pre-expansion stage.

[0078] It can be understood that when , the speed interval is , the pitch interval is , and the proportion coefficient interval is ;

[0079] When , the speed interval is , the pitch interval is , and the proportion coefficient interval is ;

[0080] When , the speed interval is , the pitch interval is , and the proportion coefficient interval is .

[0081] Further, to further improve the uniformity of the coating stage, the present disclosure sets a parameter adjustment trigger condition to avoid parameter misadjustment while ensuring smooth transition of the glue lines. Specifically:

[0082] In an embodiment, the viscosity value η of the glue solution is obtained at a set sampling frequency, and it is judged whether the plurality of continuous viscosity values η all exceed the first threshold range corresponding to the current viscosity interval. If yes, the glue head moving speed v, the glue extrusion flow Q and the pitch p of the spiral trajectory are adjusted step by step, and if no, the current glue head moving speed v, the glue extrusion flow Q and the pitch p of the spiral trajectory are maintained.

[0083] For example, when the three groups of continuous viscosity values η all exceed ±10% (i.e. the first threshold range) of the current viscosity interval, the parameter adjustment is triggered. For example, the current glue head moving speed v = 5 mm / s, the pitch p of the spiral trajectory = 1.5 mm (i.e. the corresponding viscosity interval is 1000-3000 mPa·s), and if the three groups of continuous viscosity values η all reach 3300 mPa·s, the glue head moving speed v, the glue extrusion flow Q and the pitch p of the spiral trajectory need to be adjusted step by step to control the proportion coefficient k in the glue head moving speed v and the glue extrusion flow Q and the pitch p of the spiral trajectory to adjust to the speed interval, the proportion coefficient interval and the pitch interval corresponding to the viscosity interval 3000-6000 mPa·s, respectively.

[0084] It can be understood that in the above adjustment process, if the parameters are suddenly changed, it will cause abnormal glue line pattern. For example, the pitch p is reduced from 1.5mm to 1.0mm, which may cause local glue line overlap. In order to solve this problem, the present disclosure adopts the strategy of adjusting step by step in multiple times, which ensures that the glue lines in the spiral trajectory are as evenly distributed as possible, and after adjusting the parameters each time, the next adjustment is carried out after a certain time interval, which ensures the smooth transition of the size of the glue lines in the spiral trajectory. Specifically:

[0085] In an embodiment, during the process of adjusting the moving speed v of the glue applying head, the glue liquid extrusion flow Q and the pitch p of the spiral trajectory step by step, after adjusting according to the set amplitude, the next adjustment is carried out after a set time interval.

[0086] In an embodiment, the predetermined pitch amplitude is 0.2mm. If the adjustment amplitude of the pitch p is greater than the predetermined pitch amplitude, the pitch p is adjusted step by step in multiple times. For example, if the viscosity value η is suddenly increased from 2000mPa·s to 7000mPa·s, the pitch p is increased from 2.0mm to 0.8mm step by step in 3-5 times, and the interval of each adjustment is 0.5s.

[0087] In an embodiment, the predetermined glue applying head moving speed amplitude is 0.5mm / s.

[0088] In an embodiment, the viscosity value η of the glue liquid is obtained at a set sampling frequency, and it is judged whether the difference between the current viscosity value η and the last viscosity value η is greater than or equal to the first set threshold value. If yes, the glue coating is paused, and if no, the photoresist glue liquid is continuously coated.

[0089] Further, in the present disclosure, the first set threshold value is set to ±20% of the last viscosity value η, that is, if the data fluctuation between the adjacent two viscosity values η exceeds ±20% (for example, the viscosity value η is suddenly increased from 5000mPa·s to 6000mPa·s), the pre-warning is triggered and the coating is paused, which can check the glue liquid conveying pipeline (for example, whether there is a blockage causing shear force mutation), to avoid parameter misadjustment.

[0090] Further, in an embodiment of the present disclosure, a boundary protection strategy is provided, which specifically includes: judging whether the viscosity value η exceeds the preset viscosity adaptation range, if yes, triggering the equipment shutdown protection, and if no, continuing to coat the photoresist glue liquid.

[0091] When or , it means that the viscosity value η exceeds the preset viscosity adaptation range, triggering the equipment shutdown protection, and at the same time, a prompt "viscosity exceeds the adaptation range, please replace the photoresist or adjust the equipment parameters" is popped up, to avoid invalid process running.

[0092] ​The present disclosure controls various parameters of the spiral trajectory (including the moving speed v of the glue head, the pitch p of the spiral trajectory, and the glue extrusion flow Q) to automatically adapt the optimal parameter combination according to the viscosity value η of the photoresist glue, realizes the uniform pre-distribution of the glue on the wafer surface, and realizes the complete spreading process without prolonging the rotation time or improving the rotation speed, greatly improves the process efficiency, and the photoresist thickness has good repeatability.

[0093] It can be understood that, in the rotating wafer glue uniformizing stage, if the wafer is directly driven to rotate at a high speed, the photoresist glue is easy to accumulate at the edge of the wafer, causing uneven distribution of the photoresist on the wafer surface, or causing the photoresist glue to overflow the wafer, causing waste of the photoresist. If the wafer is driven to rotate at a low speed, the process efficiency will be greatly reduced, and a "bowl-shaped" distribution with a thick center and a thin edge is easy to form.

[0094] In order to solve this problem, in the process of driving the wafer to rotate in an embodiment of the present disclosure, the rotation speed of the wafer is controlled, including:

[0095] In the first period, the rotation speed of the wafer is progressively increased from the initial rotation speed to the maximum target rotation speed;

[0096] In the second period, the rotation speed of the wafer is gradually reduced from the maximum target rotation speed to the end rotation speed.

[0097] For the rheological properties of high-viscosity glue, the present disclosure designs a rotation speed control method of low-speed fusion, medium-speed diffusion, high-speed constant thickness, and deceleration ending, constructs a rotation speed change curve combining stepwise and linear, and accurately controls the whole process from spreading to film thickness setting.

[0098] In an embodiment, the first period includes a pre-spreading stage, a glue uniformizing stage, and a thickness setting stage, wherein:

[0099] In the pre-spreading stage, the spiral glue line is preliminarily fused and spread by centrifugal force, and the track gap is eliminated. The rotation speed of the wafer in this stage is 50-200 rpm, and the duration is 5-10 s;

[0100] In the glue uniformizing stage, the glue is uniformly diffused to the edge under the action of shear force, and the film thickness is preliminarily formed. The rotation speed of the wafer in this stage is 300-800 rpm, and the duration is 10-20 s;

[0101] In the thickness setting stage, the final film thickness is accurately controlled by centrifugal force. The rotation speed of the wafer in this stage is 800-2000 rpm, and the duration is 5-15 s.

[0102] Further, in the thickness setting stage, the target film thickness is negatively related to the rotation speed of the wafer, and the corresponding relationship is determined by pre-calibration to select a reasonable rotation speed of the wafer.

[0103] In the second period, the finishing speed is ≤50rpm, and the speed drop lasts for 3~5s. That is, the wafer speed is controlled to drop linearly from the maximum target speed to the finishing speed within 3~5s to avoid edge backflow accumulation caused by sudden stop.

[0104] This disclosure employs a spiral trajectory for coating the adhesive solution, reducing bubble generation. Combined with the adhesive solution viscosity value obtained from real-time sampling, the coating parameters are dynamically adjusted, significantly improving film thickness uniformity and meeting the requirements of high-precision photolithography.

[0105] By using a progressive step speed control to control the wafer rotation, the adhesive solution is evenly spread on the wafer surface after passing through three stages: initial spreading, initial forming, and film thickness determination. Finally, the wafer speed is gradually reduced and the wafer is continuously rotated for a certain period of time to avoid adhesive solution backflow and accumulation at the edges, thus greatly reducing the defect rate.

[0106] This disclosure is adaptable to photoresists of different viscosities, requiring no major adjustments to the equipment structure, and has strong compatibility.

[0107] The present disclosure will be further described below with reference to specific embodiments.

[0108] Example 1:

[0109] Combination Figure 1 and Figure 2 As shown, this embodiment uses... Figure 2 The spin coating apparatus shown implements a photoresist spin coating method. The apparatus includes a coating head 21, a rotational rheometer 22, a robotic arm 23, a photoresist supply line 24, and a substrate support platform 25. The robotic arm 23 drives the coating head 21 to apply photoresist along a spiral trajectory 27 above the wafer 26. The substrate support platform 25 supports the wafer 26, ensuring stability during spin coating. The photoresist supply line 24 delivers photoresist to the coating head 21, and the rotational rheometer 22 acquires the viscosity value η of the photoresist.

[0110] It is understood that the coating head 21, rotational rheology sensor 22, robotic arm 23, photoresist tube 24, and substrate support platform 25 in the spin coater are well known in the prior art, and any known or unknown spin coater can be used here without restriction.

[0111] In this embodiment, the wafer is an 8-inch silicon wafer (radius 105mm), the photoresist is a negative photoresist with a viscosity of 2000mPa·s, and the photoresist homogenization method specifically includes:

[0112] (1) Wafer pretreatment:

[0113] The wafer surface was activated by oxygen plasma with a power of 200W and a processing time of 30 seconds.

[0114] After coating HMDS on the wafer surface, bake at 150°C for 60 seconds to make the contact angle of the wafer surface 70°±5°;

[0115] Preheat the wafer to 30°C±1°C.

[0116] (2) Apply photoresist solution to the wafer surface according to the preset spiral trajectory using a glue coating head:

[0117] The initial parameters of the preset spiral trajectory include: the starting radius of the spiral trajectory r0=8mm, the ending radius of the spiral trajectory r n =100mm, and the initial pitch of the spiral trajectory p=1.5mm;

[0118] The initial value of the moving speed v of the glue coating head is 5mm / s, and the initial value of the glue extrusion flow Q is 0.02ml / s;

[0119] Based on the target thickness of the photoresist layer (10μm), set the total glue coating amount to 3~4ml.

[0120] (3) Drive the wafer to rotate to uniformly distribute the glue solution on the wafer surface:

[0121] In the pre-spreading stage, the wafer rotation speed is 100rpm, and the duration is 8s;

[0122] In the glue uniformizing stage, the wafer rotation speed is 500rpm, and the duration is 15s;

[0123] In the thickness setting stage, the wafer rotation speed is 1200rpm, and the duration is 10s.

[0124] In the deceleration and ending stage, control the wafer rotation speed to linearly decrease from 1200rpm to 50rpm, and continue to rotate at the ending rotation speed of 50rpm for 4s.

[0125] (4) Soft baking: heat plate bake the wafer at 80°C for 60 seconds to remove part of the solvent in the photoresist layer and improve the strength of the photoresist layer.

[0126] (5) Process effect verification:

[0127] Use ellipsometer to detect the film thickness of the coated silicon wafer: select 12 points on the center and radius direction for measurement, and the measurement results include: the average film thickness is 10.2μm, the maximum film thickness is 10.5μm, the minimum film thickness is 9.8μm, and the film thickness uniformity is ±3.4%;

[0128] Defect detection (KLA-Tencor surface detection): the number of defects on each silicon wafer in this embodiment is less than 5, (the number of defects on each silicon wafer under traditional glue uniformizing process is usually more than 15).

[0129] Example 2

[0130] This embodiment verifies the feasibility of the rotation speed and rotation speed duration in each stage of the uniform coating process by data.

[0131] 1. Pre-spreading stage (wafer rotation speed of 50-200 rpm):

[0132] (I) Rotation speed setting based on experimental data

[0133] Taking negative photoresist with a viscosity of 2000 mPa·s and an 8-inch silicon wafer as the experimental object, based on the rotation speed-coating line fusion rate comparison experiment, the rationality of the pre-spreading stage rotation speed setting was verified. The experimental data are shown in Table 1:

[0134] Table 1

[0135]

[0136] In Table 1, the coating line fusion rate is the gap filling ratio. The experimental data show that when the rotation speed is 80-100 rpm, it can meet the basic requirement of “coating line fusion rate ≥ 95%” and ensure that the “edge splashing occurrence rate ≤ 0%”. Therefore, 80-100 rpm is taken as the core reference rotation speed interval in the pre-spreading stage. Combined with the experimental data of photoresist with other viscosity values η, the wafer rotation speed is controlled at 50-200 rpm in the pre-spreading stage, and when the viscosity value η is low, the wafer rotation speed is high, and when the viscosity value η is high, the pre-spreading stage rotation speed setting is verified to be reasonable.

[0137] (II) State-related switching time experimental data

[0138] A high-speed camera (frame rate 120 fps) was used to monitor the coating line fusion state in real time, and “gap ratio ≤ 5%” was taken as the switching threshold, i.e., when the gap ratio between the coating lines is ≤ 5%, it means that the pre-spreading stage has completed the pre-spreading goal, and it can be switched to the uniform coating stage. The experimental data are shown in Table 2:

[0139] Table 2

[0140]

[0141] The experimental data show that when the viscosity value η ≤ 5000 mPa·s, the switching condition can be met within 5-10 seconds at the initial rotation speed; when the viscosity is greater than 5000 mPa·s, the wafer rotation speed can be gradually increased by a small amplitude multiple times (5-10 rpm each time) to extend the wafer rotation time to 15 seconds, and then switch to the uniform coating stage after ensuring that the gap is completely filled.

[0142] 2. Medium-speed uniform coating stage (wafer rotation speed of 300-800 rpm):

[0143] (1) Rotation speed setting based on experimental data

[0144] The shear rate (s -1 ) was controlled at 10 2 ~10 3 s -1 With the core target, for different viscosity values of photoresist, based on the rotation speed-shear rate-film thickness deviation-experiment, the rotation speed range was determined, and the experimental data are shown in Table 3:

[0145] Table 3

[0146]

[0147] The experimental data show that when the wafer rotation speed is 300~800rpm, the shear rate of different viscosity photoresists can fall within the optimal leveling interval of 10 2 ~10 3 s -1 , and the film thickness deviation is ≤±8.5%; when the rotation speed exceeds 800rpm, the photoresist with higher viscosity (viscosity value η is greater than 6000mPa·s) will appear the phenomenon of insufficient center glue or excessive diffusion at the edge. Therefore, it is reasonable to limit the wafer rotation speed to 300~800rpm during the gel uniformization stage.

[0148] (2) Experimental data of state-related switching time

[0149] The film thickness deviation of 12 detection points (one detection point is set at the center of the wafer, and 11 detection points are set at intervals along the radial extension direction) was monitored by an ellipsometer (measurement accuracy ±0.1μm). The film thickness deviation ≤±10% was used as the switching threshold, that is, when the film thickness deviation ≤±10%, it indicates that the gel uniformization stage has completed the gel uniformization target, and the switching into the constant thickness stage can be performed. The experimental data are shown in Table 4:

[0150] Table 4

[0151]

[0152] The experimental data show that within the preset viscosity adaptation range, the wafer rotation speed is set to 300~800rpm, and the duration is 10~20s, which can meet the switching condition.

[0153] 3. High-speed constant thickness stage (wafer rotation speed is 800~2000rpm):

[0154] (1) Rotation speed setting based on experimental data

[0155] Based on the Meyerhofer equation, with the target film thickness of 10μm as the benchmark, for different viscosity photoresists, based on the rotation speed-film thickness-uniformity experiment, the rotation speed range was determined, and the experimental data are shown in Table 5:

[0156] Table 5

[0157]

[0158] Experimental verification, when the speed is in 800~2000rpm, the actual film thickness of different viscosity photoresist can be controlled in the target range of 10±0.5μm, the film thickness uniformity is ≤±3.4%; when the speed exceeds the corresponding optimal value, the film thickness will be too thin due to excessive centrifugal force, therefore the speed in this stage is set to 800~2000rpm, and the optimal speed is matched according to the viscosity (i.e. when the viscosity value η is low, the wafer speed is controlled to be high, and when the viscosity value η is high, the wafer speed is controlled to be low).

[0159] (II) State-related switching timing experimental data

[0160] The film thickness is monitored in real time by ellipsometer, and "film thickness reaches target value±2% and uniformity≤±5%" is used as the switching threshold, i.e. when the film thickness reaches the target value±2% and the uniformity is ≤±5%, the thickness target is completed, and the speed reduction can be switched to the end stage. The experimental data is shown in Table 6:

[0161] Table 6

[0162]

[0163] Experimental data shows that under normal glue amount (3-4ml), the switching condition can be met within 4~15 seconds; if the glue amount is insufficient (such as less than 3ml), the glue amount needs to be supplemented and the monitoring time is extended to 16 seconds to ensure that the film thickness meets the standard before switching to the speed reduction stage. Therefore, the duration of the thickness setting stage is 5~15s, which can meet the switching condition.

[0164] 4. Speed reduction and end stage (linearly reduced from the maximum target speed to 50rpm or less):

[0165] (I) Speed reduction gradient setting basis experimental data

[0166] Based on the capillary number Ca less than 0.1 as the core target, the optimal descending gradient is determined based on the descending gradient-edge reflux rate experiment, and the experimental data is shown in Table 7:

[0167] Table 7

[0168]

[0169] Experiments show that when the falling time is 4-6 seconds (i.e. the falling gradient is 230-350 rpm / s), the capillary number Ca is less than 0.1, the edge backflow rate is less than or equal to 7%, the ratio of the edge film thickness to the center film thickness is between 0.93 and 0.98, and there is no obvious accumulation. When the falling time is less than 4 seconds (i.e. the falling gradient is greater than 380 rpm / s), the capillary number Ca is greater than 0.1, and the backflow rate increases significantly. Therefore, the falling time is set to 3-5 seconds to ensure that the speed falling gradient is reasonable.

[0170] (II) State Association Switching Timing Experimental Data

[0171] The edge film thickness is monitored by a laser profiler (measurement accuracy ±0.5 μm), and the ratio of the edge film thickness to the center film thickness is between 0.9 and 1.1 as the switching threshold. The experimental data are shown in Table 8:

[0172] Table 8

[0173]

[0174] Experimental data show that within the set speed falling time (3-5 seconds), the ratio of the edge film thickness can meet the requirements. When the speed falls below 50 rpm and the ratio meets the requirements, the end deceleration phase ends and the soft baking link is entered.

[0175] As can be seen from the above technical solutions, the photoresist uniform coating method provided by the present application has the following advantages over the traditional uniform coating process:

[0176] Significant improvement in film thickness uniformity: In the traditional process, the film thickness uniformity of high-viscosity photoresist is usually greater than ±15%. The present application controls the film thickness uniformity of high-viscosity photoresist to within ±5%, meeting the high-precision photoetching requirements.

[0177] Defect rate is reduced: Based on the spiral trajectory pre-distribution of the coating liquid to reduce the generation of bubbles, and based on the stepped speed control to avoid edge accumulation, the defect density is reduced by more than 60%;

[0178] Process efficiency is improved: Compared with the traditional process, the total uniform coating time of the present application is shortened by 20-30%, and the film thickness repeatability (CPK value) is improved from 1.0 to more than 1.6;

[0179] Material utilization rate is improved: The spiral trajectory coating reduces the waste of coating liquid, and the utilization rate of photoresist is improved by more than 30%;

[0180] Strong compatibility: It can adapt to different viscosity photoresist types (such as positive thick photoresist, negative photoresist, etc.), without the need to significantly adjust the equipment structure.

[0181] Another embodiment of the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements a photoresist uniform coating method when executing the program.

[0182] Figure 3 A hardware structure diagram of an electronic device according to an embodiment of the present specification is shown. As shown, the electronic device 30 can include at least one processor 31, a memory 32 (e.g., a non-volatile memory), an internal memory 33, and a communication interface 34, and the at least one processor 31, the memory 32, the internal memory 33, and the communication interface 34 are connected together via a bus 35. The at least one processor 31 executes at least one computer-readable instruction stored or encoded in the memory 32. Figure 3

[0183] It should be understood that the computer-executable instructions stored in the memory 32, when executed, cause the at least one processor 31 to perform various operations and functions described above in conjunction with the various embodiments of the present specification. Figure 1

[0184] In embodiments of the present specification, the electronic device 30 can include, but is not limited to, a personal computer, a server computer, a workstation, a desktop computer, a laptop computer, a notebook computer, a mobile electronic device, a smart phone, a tablet computer, a cellular phone, a personal digital assistant (PDA), a handheld device, a messaging device, a wearable electronic device, a consumer electronic device, and the like.

[0185] Another embodiment of the present disclosure also provides a computer-readable medium, which carries computer-executable instructions, wherein the computer-executable instructions, when executed by a processor, can be used to implement various operations and functions of the photoresist uniform coating method described in the various embodiments of the present specification.

[0186] The computer-readable medium in the present disclosure can be a computer-readable signal medium or a computer-readable storage medium or any combination of the two. The computer-readable storage medium may, for example, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or apparatus, or any combination of the above. More specific examples of the computer-readable storage medium can include, but are not limited to, an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present disclosure, the computer-readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, device, or apparatus.​​

[0187] In this disclosure, a computer readable signal medium can include a data signal embodied in or transmitted by a carrier wave or other transport medium, and can take any

[0188] Those skilled in the art will appreciate that embodiments of the present disclosure can be readily used as a method, apparatus, system, and computer program product. Accordingly, the present disclosure can take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present disclosure can take the form of a computer program product on one or more computer readable storage media (including, but not limited to, disk memory, CD-ROMs, optical storage devices, etc.) embodying computer readable program code.

[0189] The present disclosure is described herein with reference to the drawings, in which are shown flow diagrams of methods, apparatus, systems, and computer program products according to this disclosure. It will be understood that each block of the flow diagrams, and / or combinations of blocks in the flow diagrams, can be implemented by computer program instructions. Such computer program instructions can be provided to a processor of a general purpose computer, special purpose computer, embedded processing element or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flow diagrams block or blocks. Figure 1 The flow diagrams can also represent a method, apparatus or computer program product for operating a computer according to this disclosure. The flow diagrams do not depict the architecture, or other and / or Figure 1 The flow diagrams can also represent a method, apparatus or computer program product for operating a computer according to this disclosure. The flow diagrams do not depict the architecture, or other and / or

[0190] It will be apparent to those skilled in the art that the present disclosure is not limited to the above-described exemplary embodiments, and that the present disclosure can be implemented in other specific forms without departing from the spirit or essential characteristics of the present disclosure. Thus, the embodiments are to be considered in all respects as illustrative and not restrictive, the scope of the present disclosure being indicated by the appended claims rather than by the above description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. No limitation is intended to the scope of the claims with respect to any embodiment illustrated in the drawings or described specifically in the above description.

[0191] Furthermore, it should be understood that although the specification is described in terms of embodiments, not every embodiment includes every feature described. The specification can include implicit combinations of explicitly mentioned features and / or explicit combinations of implicitely mentioned features. Each embodiment depends on the explicit combinations of features and / or the implicit combinations of features made specifically within that embodiment, and each such embodiment can be combined with every other such embodiment to create further embodiments.

Claims

1. A photoresist planarization method, characterized by, The photoresist uniform coating method comprises: applying photoresist solution on the wafer surface according to a preset spiral track by using a coating head; driving the wafer to rotate so that the photoresist solution is uniformly distributed on the wafer surface; wherein the viscosity value η of the photoresist solution is obtained during the coating process, and the moving speed v of the coating head, the extrusion flow Q of the photoresist solution and the pitch p of the spiral track are controlled according to the viscosity value η of the photoresist solution.

2. The photoresist planarization method of claim 1, wherein controlling the extrusion flow Q of the photoresist solution according to the viscosity value η of the photoresist solution comprises: obtaining the moving speed v of the coating head and the proportional coefficient k according to the viscosity value η of the photoresist solution; According to the moving speed v of the gluing head and the proportional coefficient k, the glue extrusion flow Q is obtained, .

3. The photoresist planarization method of claim 1, wherein controlling the moving speed v of the coating head according to the viscosity value η of the photoresist solution comprises: obtaining the viscosity interval in which the viscosity value η of the photoresist solution is located, judging whether the moving speed v of the coating head is in the corresponding speed interval, if yes, maintaining the current moving speed v of the coating head to coat the photoresist solution, if no, gradually adjusting the moving speed v of the coating head according to the predetermined moving speed amplitude of the coating head until the moving speed v of the coating head is in the corresponding speed interval; and / or, controlling the pitch p of the spiral track according to the viscosity value η of the photoresist solution comprises: obtaining the viscosity interval in which the viscosity value η of the photoresist solution is located, judging whether the pitch p of the spiral track is in the corresponding pitch interval, if yes, maintaining the current pitch p to coat the photoresist solution, if no, gradually adjusting the pitch p according to the predetermined pitch amplitude until the pitch p is in the corresponding pitch interval; and / or, The glue liquid extrusion flow Q is controlled according to the viscosity value η of the glue liquid, comprising: obtaining the glue liquid extrusion flow Q according to the glue head moving speed v and the proportional coefficient k, obtaining the viscosity interval in which the viscosity value η of the glue liquid is located, judging whether the proportional coefficient k is in the corresponding proportional coefficient interval, if yes, maintaining the current glue liquid extrusion flow Q to coat the photoresist glue liquid, if not, gradually adjusting the proportional coefficient k according to the predetermined proportional coefficient amplitude until the proportional coefficient k is in the corresponding proportional coefficient interval.

4. The photoresist planarization method of claim 3, wherein When the viscosity interval is 1000-3000 mPa-s, the speed interval corresponding to the glue head moving speed v is 4-6 mm / s, the pitch interval corresponding to the pitch p is 1.5-2.0 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 3500-4000 μm 2 · s / mm; When the viscosity interval is 3000-6000 mPa-s, the speed interval corresponding to the glue head moving speed v is 3-5 mm / s, the pitch interval corresponding to the pitch p is 1.0-1.5 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 4000-4500 μm 2 · s / mm; When the viscosity interval is 6000-10000 mPa-s, the speed interval corresponding to the glue head moving speed v is 2-4 mm / s, the pitch interval corresponding to the pitch p is 0.5-1.0 mm, and the proportionality coefficient interval corresponding to the proportionality coefficient k is 4500-5000 μm 2 ·s / mm.

5. The photoresist planarization method of claim 3, wherein obtaining the viscosity value η of the photoresist solution at a set sampling frequency, judging whether the continuous multiple viscosity values η all exceed the first threshold range corresponding to the current viscosity interval, if yes, gradually adjusting the moving speed v of the coating head, the extrusion flow Q of the photoresist solution and / or the pitch p of the spiral track, if no, maintaining the current moving speed v of the coating head, the extrusion flow Q of the photoresist solution and the pitch p of the spiral track; and / or, obtaining the viscosity value η of the photoresist solution at a set sampling frequency, judging whether the difference between the current viscosity value η and the previous viscosity value η is greater than or equal to the first set threshold, if yes, pausing the coating, if no, continuing to coat the photoresist solution; and / or, during the process of gradually adjusting the moving speed v of the coating head, the extrusion flow Q of the photoresist solution and / or the pitch p of the spiral track, a set time interval is set between the adjacent two adjustments.

6. The photoresist planarization method of claim 3, wherein the predetermined pitch amplitude is less than or equal to 0.2 mm; and / or, the predetermined moving speed amplitude of the coating head is less than or equal to 0.5 mm / s.

7. The photoresist planarization method of claim 1, wherein during the process of driving the wafer to rotate, the rotation speed of the wafer is controlled, comprising: in the first period, the rotation speed of the wafer is controlled to gradually increase from the initial rotation speed to the maximum target rotation speed; in the second period, the rotation speed of the wafer is controlled to gradually decrease from the maximum target rotation speed to the end rotation speed.

8. The photoresist planarization method of claim 7, wherein the first period comprises a pre-spreading stage, a uniform coating stage and a thickness setting stage, wherein: in the pre-spreading stage, the rotation speed of the wafer is 50-200 rpm, and the duration is 5-10 s; in the uniform coating stage, the rotation speed of the wafer is 300-800 rpm, and the duration is 10-20 s; in the thickness setting stage, the rotation speed of the wafer is 800-2000 rpm, and the duration is 5-15 s; and / or, in the second period, the end rotation speed is less than or equal to 50 rpm, and the duration of the rotation speed decrease is 3-5 s.

9. The photoresist planarization method of claim 1, wherein The photoresist uniform coating method further comprises: adjusting the surface energy of the wafer surface and / or preheating the wafer before coating the photoresist solution; and / or, The photoresist uniform coating method further comprises: obtaining the viscosity value η of the solution based on the rotary rheometer sensor, and calibrating the rotary rheometer sensor based on a standard viscosity sample before coating the photoresist solution; and / or, The photoresist uniform coating method further comprises: obtaining the viscosity value η of the solution at a set sampling frequency, and the sampling frequency is 10-100 Hz; and / or, The photoresist uniform coating method further comprises: pre-processing the obtained viscosity value η to filter out invalid data and retain valid viscosity value η; and / or, The photoresist uniform coating method further comprises: judging whether the viscosity value η exceeds a preset viscosity fitting range, if yes, triggering equipment shutdown protection, and if not, continuing to coat the photoresist solution.

10. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to implement the photoresist uniform coating method in any one of claims 1-9.

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