Sodium bismuth titanate-based lead-free ferroelectric film

By introducing Sr0.4Na0.2NbO3 into BNT-based ferroelectric thin films, a (0.94-x)Bi0.5Na0.25K0.25Ti0.7Zr0.3O3-0.06BaTiO3-xSr0.4Na0.2NbO3 ferroelectric thin film with a refined grain structure was formed, which solved the problem of insufficient energy storage performance of BNT-based thin films and significantly improved the breakdown strength and energy storage density.

CN121366809APending Publication Date: 2026-01-20QINGDAO UNIV OF SCI & TECH
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Patent Information

Application Number
CN202511542434.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-10-27
Publication Date
2026-01-20

AI Technical Summary

Technical Problem

Pure sodium bismuth titanate (BNT) based films have a high residual polarization intensity and a low breakdown strength, resulting in a low recoverable energy storage density, which limits their application in energy storage devices.

Method used

By introducing Sr0.4Na0.2NbO3 with a tungsten bronze structure into BNT-based ferroelectric thin films, a (0.94-x)Bi0.5Na0.25K0.25Ti0.7Zr0.3O3-0.06BaTiO3-xSr0.4Na0.2NbO3 ferroelectric thin film is formed. The preparation process is optimized, including solution mixing, spin coating and heat treatment, to form a refined grain structure.

Benefits of technology

It improved the breakdown strength by about 56%, increased the maximum polarization intensity to 102.4 μC/cm2, and increased the energy storage density by about 37%, achieving higher energy storage performance.

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Abstract

The invention belongs to the technical field of ferroelectric materials, and particularly relates to a Sr0. 4Na0. 2NbO3 doped Bi0. 5Na0. 5TiO3 (BNT) based ferroelectric film and a preparation method of the Sr0. 4Na0. 2NbO3 based ferroelectric film. A modified sodium bismuth titanate Bi0. 5Na0. 5TiO3 (BNT)-based material is doped with A / B site elements, Sr0. 4Na0. 2NbO3 with a tungsten bronze structure is selected as a doping component, the chemical composition is (0.94-x) Bi0. 5Na0. 5Na0. 2NbO3, the doping amount of the Sr0. 4Na0. 2NbO3 is 0.01-0.1, the doping amount of the Sr0. 4Na0. 2NbO3 is 0.01-0.1, and 1 mol% of manganese is additionally doped on the basis of the Sr0. 4Na0. 2NbO3. The lead-free ferroelectric film is prepared by a sol-gel method. The breakdown resistance (Eb) and recoverable energy storage density (Wrec) of the sodium bismuth titanate-based lead-free ferroelectric film prepared according to the invention are remarkably improved, compared with an undoped sample, the Eb is improved by 56%, the maximum polarization intensity (Pmax) reaches 102.4 [mu] C / cm < 2 >, and the Wrec is improved from 94.11 J / cm < 3 > to 128.82 J / cm < 3 > and improved by 37%.
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