Composition, film, and optoelectronic device

Abstract

The invention discloses a composition, a film and a photoelectric device, the composition comprises strong-basicity anion resin and quantum dots, the strong-basicity anion resin has a protection effect on the quantum dots and can reduce damage of high temperature to the quantum dots and improve the thermal stability of the quantum dots, and the composition can be applied to preparation of the photoelectric device. The photoelectric performance and the service life of the photoelectric device can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronic technology, in particular to a composition, a thin film and an optoelectronic device. BACKGROUND

[0002] Quantum dots (QDs) are also known as semiconductor nanocrystals, which are nanocrystals with a radius less than or close to the Bohr radius of excitons, and the average particle size is usually between 1 nm and 20 nm. Quantum dots have unique fluorescence nanometer effect. The luminescence wavelength of quantum dots can be regulated by changing their size and composition. Quantum dots have the advantages of narrow half-peak width of luminescence spectrum, high color purity, good light stability, wide excitation spectrum and controllable emission spectrum, and have wide application prospects in the technical fields of photovoltaic power generation, optoelectronic display, biological probes and the like.

[0003] Quantum dots themselves have many defects. The stability of groups or functional bonds on the defects is easily affected by the environment temperature. At a higher temperature, quantum dots will appear fluorescence quenching phenomenon. Therefore, how to improve the high-temperature resistance of quantum dots is a technical problem to be solved by the present application. SUMMARY

[0004] In view of the deficiencies of the prior art, the present application provides a composition, a thin film and an optoelectronic device.

[0005] In a first aspect, the present application provides a composition, which comprises a strong basic anion resin and quantum dots.

[0006] In a second aspect, the present application provides a preparation method of a composition, comprising the step of: mixing a strong basic anion resin, quantum dots and a solvent to obtain the composition.

[0007] In a third aspect, the present application provides a thin film, the material of the thin film comprising quantum dots and a first compound, the first compound comprising one or more of a strong basic anion resin and a degradation product of the strong basic anion resin.

[0008] In a fourth aspect, the present application provides a preparation method of a thin film, comprising the steps of: depositing the composition prepared by the preparation method of the composition in the second aspect, and then heat treating the deposited composition to obtain a thin film; optionally, the temperature of the heat treatment is 80-120℃.

[0009] In a fifth aspect, the present application provides an optoelectronic device, comprising:

[0010] a cathode and an anode arranged oppositely; and

[0011] a plurality of functional layers arranged between the anode and the cathode;

[0012] At least one of the plurality of functional layers is a thin film as described in the third aspect, or at least one of the plurality of functional layers is prepared by the method of preparing a thin film as described in the fourth aspect.

[0013] The present application provides a composition, a thin film and a photoelectric device, and has the following technical effects:

[0014] The composition provided by the present application comprises a strong basic anion resin and quantum dots, the strong basic anion resin has a protective effect on the quantum dots, can reduce the damage of high temperature to the quantum dots, and improves the thermal stability of the quantum dots. BRIEF DESCRIPTION OF DRAWINGS

[0015] The technical solutions and other beneficial effects of the present application will be apparent through the following detailed description of the specific embodiments of the present application, combined with the accompanying drawings.

[0016] Figure 1 A structural schematic diagram of a photoelectric device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0017] The technical solutions in the embodiments of the present application will be described clearly and completely below, combined with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person skilled in the art without creative work fall within the scope of protection of the present application.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as is commonly understood by one of ordinary skill in the art. In addition, any method and material similar or equivalent to those described herein can be used in the present application. The preferred methods and materials described herein are only for demonstration, but cannot limit the content of the present application.

[0019] It should be noted that the sequence of the following embodiments is not limited as the preferred sequence of the embodiments. Each embodiment of the present application can exist in a range type; it should be understood that the description in a range type is only for the convenience and brevity, and should not be understood as a hard limit to the scope of the present application; therefore, it should be considered that the described range has been specifically disclosed all possible sub-ranges and single values in the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers in the range, such as 1, 2, 3, 4, 5 and 6, regardless of the range. In addition, whenever a numerical range is indicated in this text, it means that any cited number (fraction or integer) in the indicated range is included.

[0020] In the description of this application, the term "comprising" means "including but not limited to".

[0021] The term "at least one" refers to one or more items, while "multiple" or "multi-item" refers to two or more items. The terms "at least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0022] The term "and / or" encompasses any one of two or more of the listed items, as well as any and all combinations of the listed items. These combinations include any two listed items, any number of listed items, or a combination of all listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A+B. Similarly, the technical solution "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (i.e., all connected by "logical OR"), any and all combinations of A, B, C, and D, including combinations of any two or three of A, B, C, and D, and combinations of all four of A, B, C, and D (i.e., all connected by "logical AND").

[0023] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0024] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0025] The term "alkyl" refers to a saturated hydrocarbon group, which is a hydrocarbon group formed by removing one hydrogen atom from an alkane molecule and has a straight-chain or branched structure. "C1 to C20 alkyl" can be an alkyl group having 1 to 18 carbon atoms, an alkyl group having 1 to 15 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkyl group having 1 to 8 carbon atoms, or an alkyl group having 1 to 5 carbon atoms. The number of carbon atoms can be, for example, 1, 3, 5, 8, 10, 12, 15, 18, 20, or any value between two of the aforementioned values. Suitable examples include, but are not limited to, methyl, ethyl, vinyl, ethynyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2 -Butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-nonadecanyl, n-eicosyl.

[0026] The term "alkylene" refers to a hydrocarbon group formed by removing two hydrogen atoms from an alkane molecule, having a straight-chain or branched structure. "C1 to C20 alkylene" can be an alkylene with 1 to 18 carbon atoms, an alkylene with 1 to 15 carbon atoms, an alkylene with 1 to 10 carbon atoms, an alkylene with 1 to 8 carbon atoms, or an alkylene with 1 to 5 carbon atoms. The number of carbon atoms can be, for example, 1, 3, 5, 8, 10, 12, 15, 18, 20, or any value between any two of the aforementioned values.

[0027] The term "alkenyl" refers to a hydrocarbon group formed by removing one hydrogen atom from an olefin molecule, having a straight-chain or branched structure. "C2-C20 alkenyl" can be an alkenyl group having 2 to 18 carbon atoms, 2 to 15 carbon atoms, 2 to 10 carbon atoms, 2 to 8 carbon atoms, or 2 to 5 carbon atoms. The number of carbon atoms can be, for example, 2, 4, 6, 8, 10, 12, 15, 18, 20, or any two of the aforementioned values. Suitable examples include, but are not limited to, vinyl, propenyl, or butenyl.

[0028] The term "alkenyl" refers to a hydrocarbon group formed by removing two hydrogen atoms from an olefin molecule, and has a straight-chain or branched structure. "C2-C20 alkenyl" can be an alkenyl with 2 to 18 carbon atoms, an alkenyl with 2 to 15 carbon atoms, an alkenyl with 2 to 10 carbon atoms, an alkenyl with 2 to 8 carbon atoms, or an alkenyl with 2 to 5 carbon atoms. The number of carbon atoms can be, for example, 2, 4, 6, 8, 10, 12, 15, 18, 20, or any value between two of the aforementioned values.

[0029] The term "alkynyl" refers to a hydrocarbon group formed by removing one hydrogen atom from an alkyne molecule, having a straight-chain or branched structure. "C2-C20 alkynyl" can be an alkynyl group with 2 to 18 carbon atoms, 2 to 15 carbon atoms, 2 to 10 carbon atoms, 2 to 8 carbon atoms, or 2 to 5 carbon atoms. The number of carbon atoms can be, for example, 2, 4, 6, 8, 10, 12, 15, 18, 20, or any two of the aforementioned values. Suitable examples include, but are not limited to, ethynyl, propynyl, or butynyl.

[0030] The term "acetylenoid" refers to a hydrocarbon group formed by removing two hydrogen atoms from an alkyne molecule, and has a straight-chain or branched structure. "C2-C20 acetylenoid" can be an acetylenoid with 2 to 18 carbon atoms, an acetylenoid with 2 to 15 carbon atoms, an acetylenoid with 2 to 10 carbon atoms, an acetylenoid with 2 to 8 carbon atoms, or an acetylenoid with 2 to 5 carbon atoms. The number of carbon atoms can be, for example, 2, 4, 6, 8, 10, 12, 15, 18, 20, or any value between two of the aforementioned values.

[0031] The term "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and in the case of a polycyclic ring, at least one of the rings is an aromatic ring system. "Aryl with 6 to 20 ring atoms" can be an aryl having 6 to 18 ring atoms, an aryl having 6 to 16 ring atoms, an aryl having 6 to 14 ring atoms, or an aryl having 6 to 10 ring atoms. The number of ring atoms can be, for example, 6, 10, 12, 14, 16, 18, 20, or any value between any two of the foregoing. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0032] The term "arylene" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing two hydrogen atoms. It can be a monocyclic arylene, a fused-ring arylene, or a polycyclic arylene. For polycyclic rings, at least one ring is an aromatic ring system. "Alelene with 6 to 20 ring atoms" can be an arylene with 6 to 18 ring atoms, an arylene with 6 to 16 ring atoms, an arylene with 6 to 14 ring atoms, or an arylene with 6 to 10 ring atoms. The number of ring atoms can be, for example, 6, 10, 12, 14, 16, 18, 20, or any value between any two of the aforementioned values.

[0033] This application provides a composition comprising a strongly basic anion exchange resin and quantum dots. The strongly basic anion exchange resin protects the quantum dots, reducing damage from high temperatures and improving their thermal stability. It should be noted that at high temperatures (above 80°C), the strongly basic anion exchange resin undergoes thermal degradation; for example, the strongly basic groups may detach or degrade into weakly basic groups, further reducing damage to the quantum dots from high temperatures.

[0034] In some embodiments of this application, the strongly basic anion exchange resin has a porous structure, and at least some of the quantum dots are distributed within the pores of the strongly basic anion exchange resin, which can further enhance the protective effect of the strongly basic anion exchange resin on the quantum dots.

[0035] In order to further improve the dispersion uniformity of quantum dots in the composite material and avoid wasting strong basic anion exchange resin, in some embodiments of this application, the mass ratio of quantum dots to strong basic anion exchange resin in the composition is 1:(1 to 10), for example, it can be 1:1, 1:3, 1:5, 1:8, 1:10 or any value between the two aforementioned values.

[0036] To further improve the protective effect of strong base anion exchange resin on quantum dots, thereby further enhancing the high temperature resistance of quantum dots, in some embodiments of this application, the skeleton of the strong base anion exchange resin is selected from one or more of crosslinked copolymers of styrene and divinylbenzene, crosslinked copolymers of acrylic acid and divinylbenzene, and polystyrene. It has the advantages of simple crosslinking synthesis method, high skeleton stability (able to withstand high temperatures of 100℃ to 300℃) and low cost.

[0037] In some embodiments of this application, the strongly basic anion exchange resin has reactive groups, which have the structure shown in formula (Ⅰ):

[0038]

[0039] Wherein, * represents the binding site of the reactive group to the backbone of the strongly basic anion exchange resin, X - Selected from OH - or Cl - ;

[0040] R1 to R3 are each independently selected from unsubstituted or substituted with at least one R C1 to C20 alkyl, unsubstituted or substituted with at least one R C2 to C20 alkenyl, unsubstituted or substituted with at least one R C2 to C20 alkynyl, unsubstituted or substituted with at least one R aryl with a ring number of 6 to 20, or a combination of the aforementioned groups.

[0041] R4 is selected from unsubstituted or substituted with at least one R C1-C20 alkylene group, unsubstituted or substituted with at least one R C2-C20 alkenylene group, unsubstituted or substituted with at least one R C2-C20 alkyne group, unsubstituted or substituted with at least one R arylene group having 6-20 ring atoms, or a combination of the aforementioned groups.

[0042] Each time R appears, it is independently selected from hydroxyl, C1 to C10 alkyl, aryl with 6 to 10 ring atoms, or a combination of the aforementioned groups.

[0043] In some embodiments of this application, R1 to R3 are each independently selected from unsubstituted or substituted by at least one R C1 to C10 alkyl groups, unsubstituted or substituted by at least one R aryl groups having a ring atom number of 6 to 10, or combinations of the aforementioned groups.

[0044] In some embodiments of this application, R4 is selected from unsubstituted or substituted with at least one R C1 to C10 alkylene groups, unsubstituted or substituted with at least one R substituted aryl groups having a ring atom number of 6 to 10, or combinations of the aforementioned groups.

[0045] To further reduce the damage of high temperature to quantum dots, in some embodiments of this application, the content of reactive groups in the strongly basic anion exchange resin is 4 mmol / g to 10 mmol / g, for example, it can be 4 mmol / g, 6 mmol / g, 8 mmol / g, 10 mmol / g or any value between the two aforementioned values.

[0046] In order to promote the distribution of more quantum dots in the pores of the basic anion exchange resin and improve the uniformity of quantum dot distribution, thereby further enhancing the protective effect of the basic anion exchange resin on quantum dots, in some embodiments of this application, the average pore size of the strong basic anion exchange resin is 0.1 mm to 0.7 mm, for example, it can be 0.1 mm, 0.3 mm, 0.5 mm, 0.7 mm or any two of the aforementioned values.

[0047] In some embodiments of this application, the strong base anion exchange resin is selected from one or more of the following: 201×7 strong base styrene-based anion exchange resin, 201×4 strong base styrene-based anion exchange resin, D201 macroporous strong base styrene-based anion exchange resin, 201×7SC strong base styrene-based anion exchange resin, 201×7MB strong base styrene-based anion exchange resin, JK206 uniformly porous strong base styrene-based anion exchange resin, D202 macroporous strong base type II styrene-based anion exchange resin, HZ202 gel-type strong base anion exchange resin, and D213 macroporous strong base acrylic anion exchange resin. It should be noted that all of the aforementioned strong base anion exchange resins can be purchased from Piaoyichun (Shanghai) Resin Co., Ltd.

[0048] In some embodiments of this application, the quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots, and include, but are not limited to, single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the shell of the core-shell quantum dot has one or more layers. The average particle size of the quantum dots can be, for example, 2 nm to 20 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or any value between any two of the aforementioned values.

[0049] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0050] For inorganic perovskite quantum dots, the general structural formula is AMX3, where A is Cs. + M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0051] For organic perovskite quantum dots, the general structural formula is CMX3, where C is a formamidinyl group and M is a divalent metal cation, which may include, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0052] For organic-inorganic hybrid perovskite quantum dots, the general structural formula is BMX3, where B is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0053] It should be noted that, in order to further improve the solution processing performance of quantum dots, in some embodiments of this application, ligands are also attached to the surface of the quantum dots. The ligands can be common ligands in the art, including but not limited to C1-C1 ligands. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of the aromatic phosphate ligands and halogen ligands.

[0054] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0055] In some embodiments of this application, the composition further includes a solvent, a strongly basic anion exchange resin, and a quantum dot dispersant. The solvent is selected from amphoteric solvents, including but not limited to one or more of N,N-dimethylformamide, diethylene glycol monobutyl ether, methylpyrrolidone, ethylene glycol tert-butyl ether, and dipropylene glycol dimethyl ether.

[0056] In some embodiments of this application, the concentration of the strong basic anion exchange resin in the composition is 0.6 mg / mL to 2 mg / mL, for example, it can be 0.6 mg / mL, 0.8 mg / mL, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 2 mg / mL or any two of the aforementioned values. On the one hand, this improves the uniformity of distribution of the strong basic anion exchange resin and quantum dots in the composition. On the other hand, when the composition is prepared into a thin film using a solution method, it is beneficial to control the density of the film and improve the surface smoothness of the film.

[0057] This application also provides a method for preparing a composition, which can be used to prepare any of the compositions described above. The method for preparing the composition includes the steps of mixing a strongly basic anion exchange resin, quantum dots, and a solvent to obtain the composition. The strongly basic anion exchange resin, quantum dots, and solvent are all as described above.

[0058] To further improve the dispersion uniformity of the strongly basic anion exchange resin and quantum dots in the solvent, in some embodiments of this application, the mixing of the strongly basic anion exchange resin, quantum dots, and solvent includes the following steps: dissolving the strongly basic anion exchange resin in the solvent, then adding an alkali metal hydroxide to adjust the pH to 10-12, then adding the quantum dots, and mixing in a water bath at 40°C-60°C to accelerate the movement rate of the quantum dots, making it less likely for the quantum dots to agglomerate during dispersion in the strongly basic anion exchange resin. The alkali metal hydroxide is, for example, selected from one or more of sodium hydroxide and potassium hydroxide.

[0059] Further, the step of dissolving the strong base anion exchange resin in the solvent includes the following steps: adding the strong base anion exchange resin to the solvent, and dissolving the strong base anion exchange resin in the solvent under the conditions of 60°C to 80°C and stirring.

[0060] To further improve the dispersion uniformity of quantum dots and strong basic anion exchange resin in the solvent, and to avoid wasting the strong basic anion exchange resin, in some embodiments of this application, the mass ratio of quantum dots to basic anion exchange resin in the step of mixing the strong basic anion exchange resin, quantum dots and solvent is 1:(1 to 10), for example, it can be 1:1, 1:3, 1:5, 1:8, 1:10 or any value between the two aforementioned values.

[0061] To further improve the dispersion uniformity of quantum dots and strong basic anion exchange resin in the solvent, and to improve the film-forming quality of the composition, in some embodiments of this application, the concentration of the strong basic anion exchange resin in the composition is 0.6 mg / mL to 2 mg / mL, for example, it can be 0.6 mg / mL, 0.8 mg / mL, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 2 mg / mL or any value between the two aforementioned values.

[0062] This application also provides a thin film, the material of which includes quantum dots and a first compound, the first compound including one or more of a strong base anion exchange resin and a degradation product of the strong base anion exchange resin, the thin film having good flatness and photoluminescence efficiency.

[0063] In some embodiments of this application, the average surface roughness Ra of the thin film is 0.5 nm to 0.8 nm, for example, it can be 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm or any value between the two aforementioned values.

[0064] In some embodiments of this application, the photoluminescence efficiency of the thin film is 90% to 95%, for example, it can be 90%, 91%, 92%, 93%, 94%, 95% or any two of the aforementioned values.

[0065] In some embodiments of this application, the average thickness of the thin film is 10nm to 100nm, for example, it can be 10nm, 30nm, 50nm, 70nm, 100nm or any two of the aforementioned values.

[0066] In some embodiments of this application, the degradation product is a substance obtained by the shedding or degradation of strong basic groups in the strong basic anion exchange resin.

[0067] In some embodiments of this application, the degradation product is a substance obtained after heat treatment of the strongly basic anion exchange resin at 80°C to 120°C.

[0068] In some embodiments of this application, the degradation products include one or more of the following compounds: (2-a), (2-b), (2-c), and (2-d):

[0069]

[0070] Wherein, A represents the skeleton of the strongly basic anion exchange resin; -X is selected from -OH or -Cl; the selection range of R1 to R4 is as described above.

[0071] In order to further improve the dispersion uniformity of quantum dots in the thin film and reduce the manufacturing cost of the thin film, in some embodiments of this application, the mass ratio between quantum dots and the first compound is 1:(1 to 10), for example, it can be 1:1, 1:3, 1:5, 1:8, 1:10 or any two of the aforementioned values.

[0072] This application also provides a method for preparing a thin film, which can be used to prepare any of the thin films described above. The method for preparing the thin film includes the steps of: depositing a composition obtained by any of the composition preparation methods described above, and then heat-treating the deposited composition to obtain a thin film.

[0073] In the preparation method of the thin film, on the one hand, the quantum dots in the composition have good dispersion uniformity, which effectively improves the problem of quantum dot agglomeration and thus improves the flatness of the thin film; on the other hand, during the heat treatment process, the strong basic anion exchange resin will be degraded by heat, for example, the strong basic groups will fall off or degrade into weak basic groups to form one or more of the compounds shown in formula (2-a), formula (2-b), formula (2-c), and formula (2-d), thereby reducing the damage of high temperature to quantum dots and improving the photoluminescence efficiency of the thin film.

[0074] The deposition method of the composition includes, but is not limited to, one or more of the following: spin coating deposition, printing deposition, inkjet printing deposition, blade coating deposition, dip-coating deposition, immersion deposition, spray coating deposition, roller coating deposition, casting deposition, slot coating deposition, and strip coating deposition. The heat treatment temperature may be, for example, 80℃ to 100℃.

[0075] This application also provides an optoelectronic device, which includes, but is not limited to, a light-emitting device, a solar cell, or a photodetector. The optoelectronic device can be an upright structure or an inverted structure, such as... Figure 1As shown, the optoelectronic device 10 includes an anode 101 and a cathode 102 disposed opposite to each other, and a plurality of functional layers disposed between the anode 101 and the cathode 102. At least one of the plurality of functional layers is a thin film as described in any of the preceding descriptions, or at least one of the plurality of functional layers is prepared by a thin film preparation method as described in any of the preceding descriptions, which can improve the device efficiency and device lifespan of the optoelectronic device.

[0076] In some embodiments of this application, see further reference. Figure 1 The multiple functional layers include a light-emitting layer 103, which comprises a thin film as described in any of the preceding descriptions, or the light-emitting layer 103 is prepared using any of the thin film preparation methods described in the preceding descriptions.

[0077] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, and metal oxides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3.

[0078] The anode 101 or cathode 102 can also be a composite electrode. The composite electrode has a sandwich-like structure, where the upper and lower layers are independently selected from metal oxides or metal sulfides, and the middle layer is a metal, such as one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the middle layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 300 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 300 nm.

[0079] To further improve the photoelectric performance of the optoelectronic device 10, further reference is made to some embodiments of this application. Figure 1The optoelectronic device 10 includes multiple functional layers, including an electronic functional layer 104. For the optoelectronic device 10 including a light-emitting layer 103, the electronic functional layer 104 is disposed between the cathode 102 and the light-emitting layer 103. The electronic functional layer 104 can be a single-layer or multi-layer structure, and its average thickness is, for example, 10 nm to 100 nm. When the electronic functional layer 104 is a multi-layer structure, it may include, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 102 than the hole blocking layer. For an electronic functional layer 104 including both an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode 102 than the hole blocking layer. For an electronic functional layer 104 including both an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 102 than the electron transport layer. It should be noted that when the electronic functional layer 104 comprises multiple materials and the electronic functional layer 104 has a multi-layer structure, the multiple materials may all be in the same layer, or may be in different layers, or may be partially in the same layer.

[0080] In some embodiments of this application, the material of the electronic functional layer 104 includes one or more of a first inorganic compound material, a second inorganic compound material, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material. The first inorganic compound material includes, but is not limited to, one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS, and / or IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP, and / or IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS; and / or, the second inorganic compound material includes one or more doped first compounds, the doping element of the doped first compound includes, but is not limited to, one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn, and the host material of the doped first compound is selected, for example, from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2. The first doped compound is selected from one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide, for example, ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, and Zn. (1-x) Mg x O, Zn(1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, wherein 0 < x ≤ 0.5. It should be noted that the first inorganic compound material and the doped first compound can be, for example, in the form of nanoparticles, nanosheets, nanoneedles or nanorods, respectively, with nanoparticles as an example, and the average particle size of the nanoparticles being, for example, 2 nm to 50 nm.

[0081] To further promote electron-hole transport balance, thereby further improving the photoelectric performance and device lifetime of optoelectronic device 10, in some embodiments of this application, multiple functional layers include a hole functional layer 105. For optoelectronic device 10 including light-emitting layer 103, please refer to [reference needed]. Figure 1 The hole functional layer 105 is disposed between the anode 101 and the light-emitting layer 103.

[0082] In the optoelectronic device 10 of this application embodiment, the average thickness of the hole functional layer 105 is, for example, 10 nm to 100 nm. The hole functional layer 105 can be a single-layer structure or a multi-layer structure. The hole functional layer 105 includes, for example, a hole injection layer 1051 and / or a hole transport layer 1052. For the optoelectronic device 10 including the hole injection layer 1051 and the hole transport layer 1052, please continue to refer to... Figure 1 Hole injection layer 1051 is closer to anode 101 than hole transport layer 1052.

[0083] The hole functional layer 105 is made of one or more of the following: organic compounds, third inorganic compound materials, and fourth inorganic compound materials. Among these, organic compounds include, but are not limited to, poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), and polyaniline (CAS No. 25233-30-1). Polypyrrole (CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)di- 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4'-tris(carbazole-9-yl)triphenylamine (CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185) 690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS number 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS number 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS number 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (abbreviated as Spiro-TPD),One or more of the following: N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobisfluorene (Spiro-omeTAD, CAS No. 207739-72-8); and / or, the third inorganic compound material includes, but is not limited to, graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, and chromium oxide. The fourth inorganic compound material comprises one or more of copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the host material of the doped second compound is selected from graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), p-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2), or tungsten sulfide (e.g., WS2), and the doping element of the doped second compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals, and the molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped second compound.

[0084] It is understood that when the hole functional layer 105 comprises multiple materials and the hole functional layer 105 has a multi-layer structure, the multiple materials can all be in the same layer, or be in different layers, or be partially in the same layer. For example, see [continued] Figure 1 When the hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 stacked together, the material of the hole functional layer 105 includes PEDOT:PSS and TFB, with PEDOT:PSS and TFB located in different layers. The material of the hole injection layer 1051 is PEDOT:PSS, and the material of the hole transport layer 1052 is TFB.

[0085] This application also provides a method for fabricating an optoelectronic device, comprising the following steps:

[0086] S10. Provide a first electrode and form multiple functional layers on one side of the first electrode;

[0087] S20. A second electrode is formed on the side of the multiple functional layers away from the first electrode.

[0088] The step of forming multiple functional layers on one side of the first electrode includes: depositing a composition prepared by any of the aforementioned methods on one side of the first electrode, and then heat-treating the deposited composition to obtain a functional layer.

[0089] In some embodiments of this application, the functional layer obtained after heat treatment of the deposited composition is a light-emitting layer, one of the first electrode and the second electrode is an anode, and the other is a cathode. The method for fabricating the optoelectronic device further includes the steps of forming a hole functional layer between the anode and the light-emitting layer, and / or forming an electron functional layer between the cathode and the light-emitting layer. The structural composition of both the hole functional layer and the electron functional layer is as described above.

[0090] It is understood that when the first electrode is the anode and the second electrode is the cathode, the step of forming multiple functional layers on one side of the first electrode includes: sequentially forming a hole functional layer, a light-emitting layer, and an electron functional layer on one side of the first electrode, with the second electrode formed on the side of the electron functional layer away from the light-emitting layer. When the first electrode is the cathode and the second electrode is the anode, the step of forming multiple functional layers on one side of the first electrode includes: sequentially forming an electron functional layer, a light-emitting layer, and a hole functional layer on one side of the first electrode, with the second electrode formed on the side of the hole functional layer away from the light-emitting layer.

[0091] It should be noted that the methods for forming the various functional layers in optoelectronic devices include, but are not limited to, chemical and / or physical methods. Among them, chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical coating and solution methods. Physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating.

[0092] After the various functional layers of the optoelectronic device are fabricated, an encapsulation process is required. Encapsulation can be performed using common machine encapsulation or manual encapsulation. In the encapsulation environment, the oxygen and water content are both below 0.1 ppm to ensure the stability of the optoelectronic device.

[0093] In order to further improve the bonding tightness between any two adjacent functional layers in the optoelectronic device, thereby further improving the optoelectronic performance of the optoelectronic device, in some embodiments of this application, after the encapsulation process, the method for preparing the optoelectronic device further includes the step of: performing heat treatment on the device after the encapsulation process, the heat treatment temperature being, for example, 80℃~150℃, and the heat treatment time being, for example, 5min~20min.

[0094] This application also provides an electronic device, which includes any of the optoelectronic devices described above, or optoelectronic devices prepared by any of the methods described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0095] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0096] Material Example 1

[0097] This embodiment provides a composition, a thin film, and a method for preparing the same. The composition comprises 201×7 strongly basic styrene-based anion exchange resin (purchased from Powder Puree (Shanghai) Resin Co., Ltd.) and CdSe quantum dots. The CdSe quantum dots have an emission wavelength of 480 nm, a full width at half maximum (FWHM) of 20 nm, and an average particle size of 6 nm. Oleic acid and oleylamine ligands are attached to the surface of the CdSe quantum dots. The mass ratio of CdSe quantum dots to 201×7 strongly basic styrene-based anion exchange resin in the composition is 3:5.

[0098] The method for preparing the composition includes the following steps:

[0099] S1.1 Take 50 mg of 201×7 strong base styrene-based anion exchange resin and place it in 50 mL of N,N-dimethylformamide. Dissolve the 201×7 strong base styrene-based anion exchange resin in N,N-dimethylformamide at 80 °C with magnetic stirring. Then add NaOH to adjust the pH to 11 to obtain the first mixture.

[0100] S1.2. Add 30 mg of CdSe quantum dots to the first mixture and stir for 30 min in a water bath at 50°C to obtain the composition.

[0101] In this embodiment, the thin film material includes CdSe quantum dots and a first compound, which includes one or more of 201×7 strong base styrene-based anion exchange resin and degradation products of 201×7 strong base styrene-based anion exchange resin.

[0102] The method for preparing the thin film includes the following steps: providing a substrate, spin-coating the composition obtained in this embodiment onto one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 100°C for 5 minutes under a nitrogen atmosphere to obtain a thin film with an average thickness of 40 nm.

[0103] Material Example 2

[0104] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the mass ratio of CdSe quantum dots to 201×7 strong basic styrene-based anion exchange resin in the composition is 1:1.

[0105] Compared to the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that "30 mg of CdSe quantum dots" in step S1.2 is replaced with "50 mg of CdSe quantum dots".

[0106] Compared to the thin film in Material Example 1, the difference in the thin film in this example is that the ratio of CdSe quantum dots to the first compound is different.

[0107] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0108] Material Example 3

[0109] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the mass ratio of CdSe quantum dots to 201×7 strong basic styrene-based anion exchange resin in the composition is 1:2.

[0110] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that "30 mg of CdSe quantum dots" in step S1.2 is replaced with "25 mg of CdSe quantum dots".

[0111] Compared to the thin film in Material Example 1, the difference in the thin film in this example is that the ratio of CdSe quantum dots to the first compound is different.

[0112] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0113] Material Example 4

[0114] This embodiment provides a composition, a film, and a method for preparing the same. Compared with the composition in Material Example 1, the difference in this embodiment is that the 201×7 strong base styrene-based anion exchange resin is replaced with "201×4 strong base styrene-based anion exchange resin (purchased from Piaoyichun (Shanghai) Resin Co., Ltd)".

[0115] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that the "201×7 strong base styrene-based anion exchange resin" in step S1.1 is completely replaced with "201×4 strong base styrene-based anion exchange resin", while the reaction conditions and the amount of raw materials remain unchanged.

[0116] Compared to the film in Material Example 1, the film in this example differs in that the first compound includes one or more of 201×4 strong base styrene-based anion exchange resin and degradation products of 201×4 strong base styrene-based anion exchange resin.

[0117] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0118] Material Example 5

[0119] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the difference in this embodiment is that the 201×7 strong basic styrene-based anion exchange resin is replaced with "JK206 uniformly porous strong basic styrene-based anion exchange resin (purchased from Piaoyichun (Shanghai) Resin Co., Ltd)".

[0120] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that the "201×7 strong base styrene anion exchange resin" in step S1.1 is completely replaced with "JK206 uniformly porous strong base styrene anion exchange resin", while the reaction conditions and the amount of raw materials remain unchanged.

[0121] Compared to the film in Material Example 1, the film in this example differs in that the first compound includes one or more of JK206 uniformly porous strong basic styrene-based anion exchange resin and degradation products of JK206 uniformly porous strong basic styrene-based anion exchange resin.

[0122] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0123] Material Example 6

[0124] This embodiment provides a composition, a film, and a method for preparing the same. Compared to the composition in Material Example 1, the difference in this embodiment is that the 201×7 strong base styrene-based anion exchange resin is replaced with "D213 macroporous strong base acrylic anion exchange resin (purchased from Piaoyichun (Shanghai) Resin Co., Ltd)".

[0125] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that the "201×7 strong base styrene-based anion exchange resin" in step S1.1 is completely replaced with "D213 macroporous strong base acrylic anion exchange resin", while the reaction conditions and the amount of raw materials remain unchanged.

[0126] Compared to the film in Material Example 1, the film in this example differs in that the first compound includes one or more of D213 macroporous strong basic acrylic anion exchange resin and degradation products of D213 macroporous strong basic acrylic anion exchange resin.

[0127] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0128] Material Example 7

[0129] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the difference in this embodiment is that the 201×7 strong base styrene-based anion exchange resin is replaced with "D202 macroporous strong base type II styrene-based anion exchange resin (purchased from Piaoyichun (Shanghai) Resin Co., Ltd)".

[0130] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that the "201×7 strong base styrene-based anion exchange resin" in step S1.1 is completely replaced with "D202 macroporous strong base type II styrene-based anion exchange resin", while the reaction conditions and the amount of raw materials remain unchanged.

[0131] Compared to the film in Material Example 1, the film in this example differs in that the first compound includes one or more of D202 macroporous strong base type II styrene-based anion exchange resin and degradation products of D202 macroporous strong base type II styrene-based anion exchange resin.

[0132] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0133] Material Example 8

[0134] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that: CdSe quantum dots are replaced with "CdSe / ZnSe quantum dots", the emission wavelength of CdSe / ZnSe quantum dots is 530nm, the full width at half maximum (FWHM) of CdSe / ZnSe quantum dots is 22nm, the average particle size of the core of CdSe / ZnSe quantum dots is 8nm, the average thickness of the shell of CdSe / ZnSe quantum dots is 2nm, and oleic acid / oleylamine ligands are attached to the surface of CdSe / ZnSe quantum dots.

[0135] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that "take 30 mg of CdSe quantum dots" in step S1.2 is replaced with "take 30 mg of CdSe / ZnSe quantum dots".

[0136] In this embodiment, the thin film material includes CdSe / ZnSe quantum dots and a first compound, which includes one or more of 201×7 strong base styrene-based anion exchange resin and degradation products of 201×7 strong base styrene-based anion exchange resin.

[0137] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0138] Material Example 9

[0139] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared to the composition in Material Example 1, the composition in this embodiment differs in that: CdSe quantum dots are replaced with "CdSe / ZnSe / ZnS quantum dots", the emission wavelength of the CdSe / ZnSe / ZnS quantum dots is 620 nm, the full width at half maximum (FWHM) of the CdSe / ZnSe / ZnS quantum dots is 24 nm, the average particle size of the core of the CdSe / ZnSe / ZnS quantum dots is 10 nm, the average thickness of the intermediate shell of the CdSe / ZnSe / ZnS quantum dots is 2 nm, the average thickness of the outer shell of the CdSe / ZnSe / ZnS quantum dots is 2 nm, and oleic acid / oleylamine ligands are attached to the surface of the CdSe / ZnSe / ZnS quantum dots.

[0140] Compared with the preparation method of the composition in Material Example 1, the difference in the preparation method of the composition in this example is that "take 30 mg of CdSe quantum dots" in step S1.2 is replaced with "take 30 mg of CdSe / ZnSe / ZnS quantum dots".

[0141] In this embodiment, the thin film material includes CdSe / ZnSe / ZnS quantum dots and a first compound, the first compound including one or more of 201×7 strong base styrene-based anion exchange resin and degradation products of 201×7 strong base styrene-based anion exchange resin.

[0142] The film in this embodiment is prepared using the composition in this embodiment, and the preparation method is the same as that of the film preparation method in Material Example 1.

[0143] Material Comparison Example 1

[0144] This comparative example provides a thin film and its preparation method. The material of the thin film includes CdSe quantum dots (the same as in Material Example 1), and the average thickness of the thin film is 40 nm.

[0145] The preparation method of the thin film in this comparative example includes the following steps: providing a substrate, and spin-coating a solution containing CdSe quantum dots on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, wherein the solvent of the solution containing CdSe quantum dots is N,N-dimethylformamide, the concentration of CdSe quantum dots is 1 mg / mL, and then heat-treating it under a nitrogen atmosphere at 100°C for 5 min to obtain a thin film with an average thickness of 40 nm.

[0146] Material Comparison Example 2

[0147] This comparative example provides a thin film and its preparation method. The material of the thin film includes CdSe / ZnSe quantum dots (the same as in Material Example 8), and the average thickness of the thin film is 40 nm.

[0148] The preparation method of the thin film in this comparative example includes the following steps: providing a substrate, and spin-coating a solution containing CdSe / ZnSe quantum dots on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, wherein the solvent of the solution containing CdSe / ZnSe quantum dots is N,N-dimethylformamide, the concentration of CdSe / ZnSe quantum dots is 1 mg / mL, and then heat-treating under a nitrogen atmosphere at 100°C for 5 min to obtain a thin film with an average thickness of 40 nm.

[0149] Material Comparison Example 3

[0150] This comparative example provides a thin film and its preparation method. The material of the thin film includes CdSe / ZnSe / ZnS quantum dots (the same as in Material Example 9), and the average thickness of the thin film is 40 nm.

[0151] The preparation method of the thin film in this comparative example includes the following steps: providing a substrate, and spin-coating a solution containing CdSe / ZnSe / ZnS quantum dots on one side of the substrate under a nitrogen atmosphere at room temperature and pressure. The solvent of the solution containing CdSe / ZnSe / ZnS quantum dots is N,N-dimethylformamide, and the concentration of CdSe / ZnSe / ZnS quantum dots is 1 mg / mL. Then, the film is heat-treated at 100°C under a nitrogen atmosphere for 5 min to obtain a thin film with an average thickness of 40 nm.

[0152] Device Example 1

[0153] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1 As shown, in the direction from bottom to top, the optoelectronic device 10 includes an anode 101, a hole functional layer 105, a light-emitting layer 103, an electron functional layer 104, and a cathode 102 stacked sequentially. The hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 stacked sequentially, with the hole injection layer 1051 being closer to the anode 101 than the hole transport layer 1052. The electron functional layer 104 is a single-layer structure and is an electron transport layer.

[0154] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0155] The material of anode 101 includes ITO, and the average thickness of anode 101 is 100 nm;

[0156] The cathode 102 is made of Al and has an average thickness of 100 nm.

[0157] The light-emitting layer 103 is the thin film in Material Example 1;

[0158] The material of electronic functional layer 104 includes Zn0.85 Mg 0.15 O nanoparticles (average particle size of 5 nm), and the average thickness of the electronic functional layer 104 is 40 nm;

[0159] The hole injection layer 1051 is made of PEDOT:PSS and has an average thickness of 20nm.

[0160] The hole transport layer 1052 is made of TFB material and has an average thickness of 15 nm.

[0161] The fabrication method of the light-emitting device in this embodiment includes the following steps:

[0162] S10.1 Provide a substrate (material is glass and average thickness is 0.4mm), sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then sequentially ultrasonically clean the substrate including ITO with deionized water for 15min, acetone for 15min, ethanol for 15min and isopropanol for 15min, dry it and then perform ultraviolet-ozone surface treatment for 15min to obtain a substrate containing an anode;

[0163] S10.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then place it at 150℃ for constant temperature heat treatment for 20 min to obtain hole injection layer.

[0164] S10.3 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a TFB solution on the side of the hole injection layer away from the anode. The concentration of TFB in the TFB solution is 8 mg / mL and the solvent of the TFB solution is chlorobenzene. Then, place it under a nitrogen atmosphere and heat-treat at 170°C for 20 min to obtain the hole transport layer.

[0165] S10.4. Referring to the thin film preparation method in Material Example 1, a light-emitting layer is formed on the side of the hole transport layer away from the hole injection layer;

[0166] S10.5. Under a nitrogen atmosphere at room temperature and pressure, spin-coat nano-Zn onto the side of the luminescent layer furthest from the hole transport layer. 0.85 Mg 0.15 O solution, nano Zn 0.85 Mg 0.15 Nano Zn in O solution 0.85 Mg 0.15 The concentration of O is 40 mg / mL, and the nano-Zn 0.85 Mg 0.15 The solvent for the O solution is ethanol, and then it is subjected to reduced pressure drying under a nitrogen atmosphere with a pressure of 0.01 Pa to obtain the electronic functional layer.

[0167] S10.6 Place the prefabricated device after completing step S10.6 in a vacuum with a vacuum degree not exceeding 3×10⁻⁶. -4 In the vapor deposition chamber of Pa, Al is thermally vapor-deposited on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode. Then, it is encapsulated with epoxy resin. The encapsulated device is then placed in a nitrogen atmosphere and subjected to constant temperature heat treatment at 120°C for 10 minutes to obtain the optoelectronic device.

[0168] Device Examples 2 to 9

[0169] The structure of the optoelectronic device in device embodiment n is basically the same as that of the optoelectronic device in device embodiment 1. The main difference is that the light-emitting layer is different. The light-emitting layer in device embodiment n corresponds to the thin film in material embodiment n, where n is an integer from 2 to 9. For example, the light-emitting layer in device embodiment 2 is the thin film in material embodiment 2, and so on. The light-emitting layer in device embodiment 9 is the thin film in material embodiment 9.

[0170] Compared to the method for fabricating the optoelectronic device in Device Example 1, the method for fabricating the optoelectronic device in Device Example n differs in that step S10.4 is replaced with "Forming a light-emitting layer on the side of the hole transport layer away from the hole injection layer, referring to the thin film fabrication method in Material Example n".

[0171] Device Example 10

[0172] This embodiment provides an optoelectronic device and its fabrication method. The structure of the optoelectronic device in this embodiment is basically the same as that of the optoelectronic device in Device Embodiment 1.

[0173] Compared to the method for fabricating the optoelectronic device in Device Example 1, the difference in the method for fabricating the optoelectronic device in this example is that step S10.6 is replaced with "placing the prefabricated device after completing step S10.6 in a vacuum with a vacuum degree not exceeding 3×10⁻⁶". -4 In the vapor deposition chamber of Pa, Al is thermally vapor-deposited on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode, and then encapsulated with epoxy resin to obtain the optoelectronic device.

[0174] Device Example 11

[0175] This embodiment provides an optoelectronic device and its fabrication method. The structure of the optoelectronic device in this embodiment is basically the same as that of the optoelectronic device in Device Embodiment 1.

[0176] Compared to the method for fabricating the optoelectronic device in Device Example 1, the difference in the method for fabricating the optoelectronic device in this example is that step S10.6 is replaced with "placing the prefabricated device after completing step S10.6 in a vacuum with a vacuum degree not exceeding 3×10⁻⁶". -4In the Pa evaporation chamber, Al is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode. Then, it is encapsulated with epoxy resin. Finally, the encapsulated device is placed in a nitrogen atmosphere and subjected to constant temperature heat treatment at 150°C for 10 minutes to obtain the optoelectronic device.

[0177] Device Comparison Examples 1-3

[0178] The structure of the optoelectronic device in Comparative Example m is basically the same as that of the optoelectronic device in Device Example 1. The main difference is that the light-emitting layer is different. The light-emitting layer in Comparative Example m corresponds to the thin film in Comparative Example m, where m is an integer from 1 to 3. For example, the light-emitting layer in Comparative Example 1 is the thin film in Comparative Example 1, and so on. The light-emitting layer in Comparative Example 3 is the thin film in Comparative Example 3.

[0179] Compared to the method for fabricating the optoelectronic device in Device Example 1, the method for fabricating the optoelectronic device in Device Comparative Example m differs in that step S10.4 is replaced with "the method for fabricating the thin film in the reference material comparative example m forms a light-emitting layer on the side of the hole transport layer away from the hole injection layer".

[0180] Experimental Example 1

[0181] The performance of the thin films in Material Examples 1 to 9 and Material Comparative Examples 1 to 3 was tested. The surface roughness Ra of each film was measured using an atomic force microscope, and the photoluminescence efficiency of each film was measured using an Edinburgh FS5 instrument. The test results are shown in Table 1 below:

[0182] Table 1

[0183]

[0184]

[0185] As shown in Table 1, compared with the films in Comparative Examples 1 to 3, the films in Examples 1 to 10 have significantly lower surface roughness Ra and higher photoluminescence efficiency. Taking the films in Example 1 and Comparative Example 1 as examples, the Ra of the film in Example 1 is only 14.7% of that in Comparative Example 1, and the photoluminescence efficiency of the film in Example 1 is 33% higher than that of the film in Comparative Example 1.

[0186] Therefore, it can be seen that using the solution method to prepare a film from a composition containing a strong base anion exchange resin and quantum dots can, on the one hand, effectively improve the aggregation of quantum dots, thereby improving the surface smoothness of the film; on the other hand, the strong base anion exchange resin can reduce the damage of quantum dots to high temperatures and improve the thermal stability of quantum dots, thereby ensuring that the film has good photoluminescence efficiency.

[0187] Experiment Example 2

[0188] The performance of the optoelectronic devices in Device Examples 1 to 11 and Device Comparative Examples 1 to 3 after 1 hour of packaging was tested. The performance tests were conducted in an environment with a temperature of 25°C and a relative humidity of 50%.

[0189] The testing instruments include the Fostar FPD optical characteristic measurement equipment and the external quantum efficiency optical testing instrument. The Fostar FPD optical characteristic measurement equipment is an efficiency testing system built from components such as Ocean Optics USB2000, LabVIEW-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, efficiency test dark box and data acquisition system. It acquires parameters such as the turn-on voltage, current, brightness, and emission spectrum of each optoelectronic device, and then calculates key parameters such as external quantum efficiency and power efficiency.

[0190] Lifetime testing refers to detecting the time it takes for a device's brightness to decay to a certain percentage of its maximum brightness under a constant current of 2mA. The time it takes for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting a decay fitting formula. For example, the lifetime at a brightness of 1000 nits is denoted as T95@1000nits, and the calculation formula is as follows:

[0191]

[0192] Among them, T95 L The lifespan at low brightness is typically taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L The typical value is 1000 nits, where A is the acceleration factor, which is set to 1.7.

[0193] The external quantum efficiency (EQE) is measured as the ratio of electron-hole pairs injected into a quantum dot to emitted photons, expressed as a percentage (%). It is a crucial parameter for evaluating the quality of electroluminescent devices and can be obtained using an EQE optical testing instrument. The specific calculation formula is as follows:

[0194]

[0195] Where ηe is the optical output coupling efficiency, ηγ is the ratio of the number of recombinated carriers to the number of injected carriers, x is the ratio of the number of excitons that generate photons to the total number of excitons, KR is the radiative process rate, and KNR is the non-radiative process rate.

[0196] EQE max This represents the maximum external quantum efficiency.

[0197] Voltage@1000nits(V) is the operating voltage under the condition of 1000 nits brightness.

[0198] The performance test data for each optoelectronic device are detailed in Table 2 below:

[0199] Table 2

[0200]

[0201] In addition, each of the above-mentioned optoelectronic devices, after being packaged for 1 hour, was subjected to a specific temperature for 30 minutes, and then the EQE was tested. max The test results are shown in Table 3 below:

[0202]

[0203]

[0204] As shown in Tables 2 and 3, compared with Device Comparative Example 1, the optoelectronic devices in Device Examples 1 to 7, Device Example 10 and Device Example 11 have better luminous efficiency, device lifespan and thermal stability; compared with Device Comparative Example 2, the optoelectronic device in Device Example 8 has better luminous efficiency, device lifespan and thermal stability; compared with Device Comparative Example 3, the optoelectronic device in Device Example 9 has better luminous efficiency, device lifespan and thermal stability.

[0205] Therefore, using a composition containing a strongly basic anion exchange resin and quantum dots (blue, red, or green quantum dots) to prepare the emissive layer of an optoelectronic device can effectively improve the luminous efficiency and lifespan of the device. This is because, on the one hand, it can improve the film quality of the emissive layer prepared by solution processing and reduce the surface roughness of the emissive layer; on the other hand, it can improve the thermal stability of the quantum dots, thereby improving the photoluminescence efficiency of the emissive layer. The optoelectronic devices in Comparative Examples 1 to 3 are made of blue, green, and red quantum dots, respectively. Due to the tendency of quantum dots to aggregate in solution and their thermal sensitivity, the surface smoothness of the emissive layer in Comparative Examples 1 to 3 is poor, and the photoluminescence efficiency is low. Therefore, the luminous efficiency, lifespan, and thermal stability of the optoelectronic devices in Comparative Examples 1 to 3 are poor.

[0206] The above provides a detailed description of a composition, thin film, and optoelectronic device provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A composition, characterized in that, The composition comprises a strongly basic anion exchange resin and quantum dots.

2. The composition according to claim 1, characterized in that, The strongly basic anion exchange resin has a porous structure, and at least some of the quantum dots are distributed within the pores of the strongly basic anion exchange resin. And / or, in the composition, the mass ratio of the quantum dots to the strongly basic anion exchange resin is 1:(1-10); And / or, the backbone of the strongly basic anion exchange resin is selected from one or more of the following: cross-linked copolymers of styrene and divinylbenzene, cross-linked copolymers of acrylic acid and divinylbenzene, and polystyrene; And / or, the composition further includes a solvent in which the strongly basic anion exchange resin and the quantum dots are dispersed; optionally, the solvent is selected from one or more of N,N-dimethylformamide, diethylene glycol monobutyl ether, methylpyrrolidone, ethylene glycol tert-butyl ether, and dipropylene glycol dimethyl ether, and / or the concentration of the strongly basic anion exchange resin in the composition is 0.6 mg / mL to 2 mg / mL; And / or, the strongly basic anion exchange resin has reactive groups having the structure shown in formula (I): Wherein, * represents the binding site of the reactive group to the backbone of the strongly basic anion exchange resin, X - Selected from OH - or Cl - ; R1 to R3 are each independently selected from unsubstituted or substituted with at least one R C1 to C20 alkyl, unsubstituted or substituted with at least one R C2 to C20 alkenyl, unsubstituted or substituted with at least one R C2 to C20 alkynyl, unsubstituted or substituted with at least one R aryl with a ring number of 6 to 20, or a combination of the aforementioned groups. R4 is selected from unsubstituted or substituted with at least one R C1-C20 alkylene group, unsubstituted or substituted with at least one R C2-C20 alkenylene group, unsubstituted or substituted with at least one R C2-C20 alkyne group, unsubstituted or substituted with at least one R arylene group having 6-20 ring atoms, or a combination of the aforementioned groups. Each time R appears, it is independently selected from hydroxyl, C1 to C10 alkyl, aryl with 6 to 10 ring atoms, or a combination of the aforementioned groups; And / or, the content of reactive groups in the strongly basic anion exchange resin is 4 mmol / g to 10 mmol / g; And / or, the average pore size of the strongly basic anion exchange resin is 0.1 mm to 0.7 mm.

3. The composition according to claim 1 or 2, characterized in that, The strong base anion exchange resin is selected from one or more of the following: 201×7 strong base styrene-based anion exchange resin, 201×4 strong base styrene-based anion exchange resin, D201 macroporous strong base styrene-based anion exchange resin, 201×7SC strong base styrene-based anion exchange resin, 201×7MB strong base styrene-based anion exchange resin, JK206 uniformly porous strong base styrene-based anion exchange resin, D202 macroporous strong base type II styrene-based anion exchange resin, HZ202 gel-type strong base anion exchange resin, and D213 macroporous strong base acrylic anion exchange resin. And / or, the quantum dots are selected from one or more of blue luminescent quantum dots, green luminescent quantum dots, and red luminescent quantum dots; And / or, the quantum dot is selected from one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell quantum dot includes one or more shells, and the materials of the single-component quantum dot, the core of the core-shell quantum dot, and the shell of the core-shell quantum dot are independently selected from one or more of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, and group I-III-VI compounds;Optionally, the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZn One or more of STe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, and / or the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and / or the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, and AlNA. s, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and / or the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2; and / or the inorganic perovskite quantum dots have the general structural formula AMX3, where A is Cs. + M is a divalent metal cation, and M is selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ and Eu 2+ One or more of the following, where X is a halide anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, where C is formamidinyl; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, where B is an organic amine cation.

4. A method for preparing a composition, characterized in that, The process includes the following steps: mixing a strongly basic anion exchange resin, quantum dots, and a solvent to obtain the composition.

5. The method for preparing the composition according to claim 4, characterized in that, The process of mixing the strong base anion exchange resin, quantum dots, and solvent includes the following steps: dissolving the strong base anion exchange resin in the solvent, then adding an alkali metal hydroxide to adjust the pH to 10-12, then adding quantum dots, and mixing in a water bath at 40-60°C. And / or, in the step of mixing the strong basic anion exchange resin, quantum dots and solvent, the mass ratio of the quantum dots to the strong basic anion exchange resin is 1:(1-10); And / or, the strongly basic anion exchange resin is selected from the strongly basic anion exchange resins described in claim 2 or 3; And / or, the quantum dot is selected from the quantum dots described in claim 3; And / or, the solvent is selected from one or more of N,N-dimethylformamide, diethylene glycol monobutyl ether, methylpyrrolidone, ethylene glycol tert-butyl ether, and dipropylene glycol dimethyl ether; And / or, the concentration of the strongly basic anion exchange resin in the composition is 0.6 mg / mL to 2 mg / mL.

6. A thin film, characterized in that, The material of the thin film includes quantum dots and a first compound, the first compound including one or more of a strongly basic anion exchange resin and a degradation product of the strongly basic anion exchange resin.

7. The thin film according to claim 6, characterized in that, The strongly basic anion exchange resin is selected from the strongly basic anion exchange resins described in claim 2 or 3; The degradation product is a substance obtained after heat treatment of the strongly basic anion exchange resin at 80℃~120℃; And / or, the degradation products include one or more of the following compounds: (2-a), (2-b), (2-c), and (2-d): Wherein, A represents the skeleton of the strongly basic anion exchange resin; -X is selected from -OH or -Cl; R1 to R3 are each independently selected from unsubstituted or substituted with at least one R C1 to C20 alkyl, unsubstituted or substituted with at least one R C2 to C20 alkenyl, unsubstituted or substituted with at least one R C2 to C20 alkynyl, unsubstituted or substituted with at least one R aryl with a ring number of 6 to 20, or a combination of the aforementioned groups. R4 is selected from unsubstituted or substituted with at least one R C1-C20 alkylene group, unsubstituted or substituted with at least one R C2-C20 alkenylene group, unsubstituted or substituted with at least one R C2-C20 alkyne group, unsubstituted or substituted with at least one R arylene group having 6-20 ring atoms, or a combination of the aforementioned groups. Each time R appears, it is independently selected from hydroxyl, C1 to C10 alkyl, aryl with 6 to 10 ring atoms, or a combination of the aforementioned groups; The skeleton is selected from one or more of the following: cross-linked copolymers of styrene and divinylbenzene, cross-linked copolymers of acrylic acid and divinylbenzene, and polystyrene; And / or, the average surface roughness Ra of the thin film is 0.5 nm to 0.8 nm; And / or, the photoluminescence efficiency of the thin film is 90% to 95%; And / or, the average thickness of the film is 10 nm to 100 nm; And / or, the mass ratio of the quantum dot to the first compound is 1:(1 to 10).

8. A method for preparing a thin film, characterized in that, The process includes the following steps: depositing a composition prepared by the method described in claim 4 or 5, and then heat-treating the deposited composition to obtain a thin film; optionally, the heat treatment temperature is 80°C to 120°C.

9. An optoelectronic device, characterized in that, include: The anode and cathode are positioned opposite each other; as well as Multiple functional layers are disposed between the anode and the cathode; Wherein, at least one of the plurality of functional layers is a thin film as described in claim 6 or 7, or at least one of the plurality of functional layers is prepared by the thin film preparation method as described in claim 8.

10. The optoelectronic device according to claim 9, characterized in that, The plurality of functional layers include a light-emitting layer, which comprises a thin film as described in claim 6 or 7, or the light-emitting layer is prepared by the method for preparing a thin film as described in claim 8; And / or, the plurality of functional layers include an electronic functional layer, the material of which includes one or more of a first inorganic compound material, a second inorganic compound material, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, and a group IB-IIIA-VIA semiconductor material; wherein, the first inorganic compound material includes one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, and / or the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, and / or the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, and / or the group IIB-VIA semiconductor material is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The IA-VA group semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA group semiconductor material is selected from one or more of CuInS and CuGaS, and / or the second inorganic compound material includes one or more doped first compounds, the host material of the doped first compound is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the doping element of the doped first compound includes one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; And / or, the plurality of functional layers include a hole functional layer, the material of which includes one or more of organic materials, a third inorganic compound material, and a fourth inorganic compound material; wherein, the organic material includes poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polyaniline, polypyrrole, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4 [-Butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4'-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N' -(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino] The fourth inorganic compound material comprises one or more of [-9,9'-spirodifluorene], and / or the third inorganic compound material comprises one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and / or the fourth inorganic compound material comprises one or more doped second compounds, wherein the host material of the doped second compound comprises graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped second compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals.

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