Wafer groove processing method and related device thereof

Abstract

The invention provides a wafer groove machining method and a related device thereof, and relates to the technical field of wafer machining, the wafer groove machining method is used for wafer machining equipment, the wafer machining equipment comprises a cutter, and the machining method comprises the steps that a wafer is recognized, and the outer contour of the wafer is determined; obtaining a preset slotting track of the wafer; a grooving path is determined based on the preset grooving track of the wafer and the outer contour of the wafer, the grooving path comprises a grooving direction, a cutter falling point and a cutter lifting point, the cutter falling point and the cutter lifting point are arranged on the wafer, and a first distance exists between the cutter falling point and the outer contour of the wafer and between the cutter lifting point and the outer contour of the wafer; and controlling the cutter to cut a groove on the wafer along the grooving path. Grooving is carried out through the cutter, multiple batches of wafers can be processed, repeated cleaning is not needed, the machining speed is high, environmental pollution is avoided, and the cost is low.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer processing, in particular to a wafer trench processing method and a related device thereof. BACKGROUND

[0002] In related art, when processing the trench of a wafer, an etching process is generally used to process the wafer to form a trench on the wafer. However, this method needs to use an etching solution, which has a high cost, and the single batch processing and cleaning time are relatively long, the production capacity is low, and the etching solution has certain environmental pollution problems.

[0003] Therefore, there is an urgent need for a wafer trench processing method and a related device thereof that can solve the problems of environmental pollution, low yield, and high cost. SUMMARY

[0004] The present application provides a wafer trench processing method and a related device thereof that can solve the problems of environmental pollution, low yield, and high cost.

[0005] To this end, a first object of the present application is to provide a wafer trench processing method.

[0006] A second object of the present application is to provide a control device for wafer trench processing.

[0007] A third object of the present application is to provide another control device for wafer trench processing.

[0008] A fourth object of the present application is to provide a readable storage medium.

[0009] A fifth object of the present application is to provide a wafer processing device.

[0010] Therefore, an embodiment of the first aspect of the present application provides a wafer trench processing method for a wafer processing device, the wafer processing device comprising a tool, the processing method comprising: identifying a wafer to determine an outer contour of the wafer; obtaining a preset trenching trajectory of the wafer; determining a trenching path based on the preset trenching trajectory of the wafer and the outer contour of the wafer, the trenching path comprising a trenching direction, a tool falling point, and a tool lifting point, the tool falling point and the tool lifting point being arranged on the wafer, and the tool falling point and the tool lifting point having a first distance from the outer contour of the wafer; and controlling the tool to cut a trench on the wafer along the trenching path.

[0011] In the technical solution, the processing method comprises: identifying the wafer to determine the outer contour of the wafer; obtaining a preset slotting track of the wafer; determining a slotting path based on the preset slotting track of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a falling point and a lifting point, the falling point and the lifting point being arranged on the wafer, and the falling point and the lifting point having a first distance from the outer contour of the wafer; and controlling the cutter to cut a groove on the wafer along the slotting path, the number of slotting paths being multiple, and the cutter being controlled to cut the multiple slotting paths in sequence. In the present application, the cutter is used for slotting, so that the corrosive solution is abandoned, and the environmental pollution is eliminated. Moreover, the wafer processing equipment using the cutter is cheaper than the wafer processing equipment using laser cutting, and the cost is lower. In the present application, in order to ensure that the cutter can process the wafer processing equipment, a processing mode of directly falling the cutter on the wafer is adopted. The cutter directly falls on the wafer, and the lifting position is also within the range of the wafer, so that an unslotted area is formed on the outer side of the wafer. The conventional falling position and lifting position of the cutter are both outside the wafer. The slotting scheme using the cutter in the present application can process multiple batches of wafers, and the processing speed is fast. The slotting scheme using the cutter in the present application does not need to be cleaned multiple times, does not pollute the environment, and only the wear of the cutter head is the cost, so the cost is low. The groove can realize the functions of device isolation, conductive channel or electric field control.

[0012] In any of the above technical solutions, before the step of controlling the cutter to cut a groove on the wafer along the slotting path, the processing method further comprises: obtaining the thickness of the wafer and the depth of the groove; and determining the falling height of the cutter, the cutting speed of the cutter and the spindle speed of the cutter based on the thickness of the wafer and the depth of the groove.

[0013] In the technical solution, before the step of controlling the cutter to fall on the wafer to cut the wafer, slot along the slotting direction, and lift at the lifting point to complete the slotting, the processing method further comprises: obtaining the thickness of the wafer and the depth of the groove; and determining the falling height of the cutter, the cutting speed of the cutter and the spindle speed of the cutter based on the thickness of the wafer and the depth of the groove. In order to ensure that the cutter can cut a groove meeting the requirements, the thickness of the wafer and the depth of the groove are used to determine the falling height of the cutter, the cutting speed of the cutter and the spindle speed of the cutter in the present application. By controlling the cutting speed of the cutter and the spindle speed of the cutter, the processing defects such as wafer edge collapse, micro-cracks and incomplete photoresist peeling caused by the mismatch between the speed and the spindle speed are avoided, and the product yield is improved.

[0014] In any of the above technical solutions, the cutting speed of the cutter is greater than 30 mm / s and less than or equal to 60 mm / s; and / or the spindle speed of the cutter is greater than or equal to 30000 rpm and less than or equal to 60000 rpm.

[0015] In any of the above technical solutions, optionally, the granularity of the cutter is greater than or equal to 3000 mesh and less than or equal to 4000 mesh.

[0016] In this technical solution, the granularity of the cutter is greater than or equal to 3000 mesh and less than or equal to 4000 mesh. By controlling the granularity of the cutter, the process requirement of groove edge collapse is met.

[0017] In any of the above technical solutions, optionally, before the step of identifying the wafer, the processing method further comprises: coating photoresist on the surface of the wafer.

[0018] In this technical solution, photoresist is coated on the surface of the wafer to prevent contaminants generated during cutting from contaminating the substrate surface.

[0019] In any of the above technical solutions, optionally, before the step of controlling the cutter to cut a groove on the wafer along the slotting path, the processing method further comprises: controlling the wafer processing equipment to suck vacuum.

[0020] In this technical solution, the wafer processing equipment is controlled to suck vacuum to stably adsorb and fix the wafer on the processing platform, effectively preventing displacement or vibration of the wafer during cutting. On the one hand, this ensures the accuracy of the slotting path, avoids cutting position errors caused by wafer offset, and guarantees processing precision. On the other hand, it eliminates cutter shaking caused by vibration, thereby reducing wafer edge collapse, cracks and other processing defects, and improving product yield and processing process stability.

[0021] The second aspect of the present application provides a control device for wafer groove processing, for a wafer processing equipment comprising a cutter, the control device comprising: an identification device for identifying a wafer and determining the outer contour of the wafer; an acquisition device for acquiring a preset slotting trajectory of the wafer; a path determination device for determining a slotting path based on the preset slotting trajectory of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a cutter falling point and a cutter lifting point, the cutter falling point and the cutter lifting point being arranged on the wafer, and the cutter falling point and the cutter lifting point having a first distance from the outer contour of the wafer; a cutter control device for controlling the cutter to cut a groove on the wafer along the slotting path.

[0022] In the technical solution, the control device in the application comprises: an identification device, configured to identify the wafer and determine the outer contour of the wafer; an acquisition device, configured to acquire a preset slotting track of the wafer; a path determination device, configured to determine a slotting path based on the preset slotting track of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a falling point and a lifting point, the falling point and the lifting point being arranged on the wafer and having a first distance from the outer contour of the wafer; and a cutter control device, configured to control the cutter to cut a groove on the wafer along the slotting path. First, the cutter is used for slotting, so that the corrosive solution is abandoned, which does not have the characteristics of environmental pollution, and the wafer processing equipment using the cutter is cheaper than the wafer processing equipment using laser cutting, and the cost is lower. In the application, in order to ensure that the cutter can slot the wafer processing equipment, a processing mode of directly falling the cutter on the wafer is adopted, the cutter directly falls on the wafer, and the lifting position is also within the range of the wafer, forming an unslotted area on the outer side of the wafer. The conventional falling position and lifting position of the cutter are both outside the wafer. The slotting scheme using the cutter in the application can first process multiple batches of wafers, has a fast processing speed, does not need to be cleaned multiple times, has no environmental pollution, and only the wear of the cutter head is the cost, so the cost is low.

[0023] The third aspect of the application provides a control device for wafer groove processing, comprising a memory and a processor, the memory stores programs or instructions executable on the processor, and the programs or instructions are executed by the processor to implement the steps of the wafer groove processing method provided in the first aspect.

[0024] The fourth aspect of the application provides a readable storage medium having programs and / or instructions stored thereon, the programs and / or instructions are executed by the processor to implement the steps of the wafer groove processing method provided in the first aspect.

[0025] The fifth aspect of the application provides a wafer processing equipment, comprising: a cutter for slotting a wafer; a control device for wafer groove processing as provided in the second aspect, and / or a control device for wafer groove processing as provided in the third aspect, and / or a readable storage medium as provided in the fourth aspect.

[0026] Additional aspects and advantages of the application will become apparent in the light of the following description section, or will be understood by practicing the application. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present application or the embodiments in the related art, the drawings needed to be used in the embodiments or related technical description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0028] Figure 1 is a flowchart of a wafer trench processing method according to an embodiment of the present application;

[0029] Figure 2 is one of the block diagrams of a control device for wafer trench processing according to an embodiment of the present application;

[0030] Figure 3 is the second block diagram of a control device for wafer trench processing according to an embodiment of the present application;

[0031] Figure 4 is a schematic diagram of a wafer according to an embodiment of the present application;

[0032] Figure 5 is a schematic diagram of a wafer processing device according to an embodiment of the present application.

[0033] Wherein, 1 wafer, 10 outer contour, 2 preset slotting trajectory, 3 slotting path, 32 slotting direction, 34 tool falling point, 36 tool lifting point, 400 wafer processing device, 402 tool. DETAILED DESCRIPTION

[0034] In order to more clearly illustrate the above-mentioned purposes, features and advantages of the present application, the present application will be further described in detail below in combination with the drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0035] In the following description, many specific details are set forth in order to provide a thorough understanding of the present application, however, the present application can also be implemented in other ways different from those described herein, therefore, the scope of protection of the present application is not limited by the specific embodiments disclosed below.

[0036] As Figure 5 shown, the present application provides a wafer trench processing method, which is used in a wafer processing device 400, and the wafer processing device 400 includes a tool 402, as Figure 1 shown, the processing method includes:

[0037] S101: identifying the wafer to determine the outer contour of the wafer;

[0038] S103: obtaining the preset slotting trajectory of the wafer;

[0039] S105: determining a slotting path based on the preset slotting track of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a falling point and a lifting point, the falling point and the lifting point being arranged on the wafer, and the falling point and the lifting point having a first distance from the outer contour of the wafer;

[0040] S107: controlling the cutter to cut a groove on the wafer along the slotting path.

[0041] In this embodiment, as shown in Figure 4 and Figure 5 , the processing method comprises: identifying the wafer 1, determining the outer contour 10 of the wafer 1; obtaining the preset slotting track 2 of the wafer 1; determining the slotting path 3 based on the preset slotting track 2 of the wafer 1 and the outer contour 10 of the wafer 1, the slotting path 3 comprising a slotting direction 32, a falling point 34 and a lifting point 36, the falling point 34 and the lifting point 36 being arranged on the wafer 1, and the falling point 34 and the lifting point 36 having a first distance A from the outer contour 10 of the wafer 1; controlling the cutter 402 to cut a groove on the wafer 1 along the slotting path 3. In this application, the cutter 402 is first used for slotting, so that the corrosive solution is abandoned, which does not have the characteristics of environmental pollution, and the wafer processing equipment 400 using the cutter 402 is cheaper than the wafer processing equipment 400 using laser cutting, and the cost is lower. In order to ensure that the cutter 402 can slot the wafer processing equipment 400, a direct falling processing method is adopted, in which the cutter 402 directly falls on the wafer 1, and the lifting position is also within the range of the wafer 1, forming an unslotted area outside the wafer 1. The conventional falling position and lifting position of the cutter 402 are both outside the wafer 1. The slotting scheme using the cutter 402 in this application can first process multiple batches of wafers 1, and the processing speed is fast, without the need for multiple cleaning, no environmental pollution, and only the wear of the cutter head as the cost, which is low in cost.

[0042] In any of the above embodiments, optionally, as shown in Figure 4 and Figure 5 , before the step of controlling the cutter 402 to cut a groove on the wafer 1 along the slotting path 3, the processing method further comprises: obtaining the thickness B of the wafer 1 and the depth C of the groove; determining the falling height of the cutter 402, the cutting speed of the cutter 402 and the spindle speed of the cutter 402 based on the thickness B of the wafer 1 and the depth C of the groove.

[0043] In this embodiment, before the step of controlling the cutter 402 to cut the trench on the wafer 1 along the slotting path 3, the processing method further comprises: obtaining the thickness B of the wafer 1 and the depth C of the trench; determining the drop height of the cutter 402, the cutting speed of the cutter 402 and the spindle speed of the cutter 402 based on the thickness B of the wafer 1 and the depth C of the trench. In order to ensure that the cutter 402 can open the required trench, the thickness B of the wafer 1 and the depth C of the trench are required to determine the drop height of the cutter 402, the cutting speed of the cutter 402 and the spindle speed of the cutter 402 in this application. By controlling the cutting speed of the cutter 402 and the spindle speed of the cutter 402, the processing defects such as wafer edge collapse, micro-cracks, and incomplete photoresist peeling caused by speed-speed mismatch are avoided, and the product yield is improved.

[0044] In any of the above embodiments, optionally, as shown in Figure 5 the cutting speed of the cutter 402 is greater than 30 mm / s and less than or equal to 60 mm / s; and / or the spindle speed of the cutter 402 is greater than or equal to 30,000 rpm and less than or equal to 60,000 rpm.

[0045] In any of the above embodiments, optionally, the grit size of the cutter 402 is greater than or equal to 3,000 mesh and less than or equal to 4,000 mesh.

[0046] In this embodiment, the grit size of the cutter 402 is greater than or equal to 3,000 mesh and less than or equal to 4,000 mesh. By controlling the grit size of the cutter 402, the process requirements for trench edge collapse are met.

[0047] In any of the above embodiments, optionally, before the step of identifying the wafer 1, the processing method further comprises: coating photoresist on the surface of the wafer 1.

[0048] In this embodiment, photoresist is coated on the surface of the wafer 1 to prevent contaminants generated during cutting from contaminating the substrate surface.

[0049] In any of the above embodiments, optionally, as shown in Figure 4 and Figure 5 before the step of controlling the cutter 402 to cut the trench on the wafer 1 along the slotting path 3, the processing method further comprises: controlling the wafer processing equipment 400 to suck vacuum.

[0050] In this embodiment, the wafer processing equipment 400 is controlled to draw a vacuum to stably adsorb and fix the wafer 1 on the processing platform, effectively preventing displacement or vibration during the cutting process. This ensures the accuracy of the grooving path 3, avoids cutting position errors caused by wafer 1 offset, and guarantees processing precision. On the other hand, it eliminates tool 402 vibration caused by vibration, thereby reducing processing defects such as chipping and cracking of the wafer 1, and improving product yield and processing stability.

[0051] like Figure 2 As shown, a second aspect of this application provides a control device 200 for wafer trenching, used in a wafer processing equipment 400. The wafer processing equipment 400 includes a cutting tool 402. The control device 200 for wafer trenching includes: an identification device 202 for identifying the wafer and determining its outer contour; an acquisition device 204 for acquiring a preset trenching trajectory of the wafer; a path determination device 206 for determining a trenching path based on the preset trenching trajectory and the outer contour of the wafer, the trenching path including a trenching direction, a tool entry point, and a tool exit point, the tool entry point and the tool exit point being located on the wafer, and a first distance between the tool entry point and the tool exit point and the outer contour of the wafer; and a cutting tool control device 208 for controlling the cutting tool to cut trenches on the wafer along the trenching path.

[0052] In this embodiment, the control device 200 for wafer trenching in this application includes: an identification device 202 for identifying the wafer and determining its outer contour; an acquisition device 204 for acquiring a preset trenching trajectory of the wafer; a path determination device 206 for determining a trenching path based on the preset trenching trajectory and the outer contour of the wafer, the trenching path including a trenching direction, a tool entry point, and a tool exit point, the tool entry point and the tool exit point being located on the wafer, and a first distance between the tool entry point and the tool exit point and the outer contour of the wafer; and a tool control device 208 for controlling the tool to cut trenches on the wafer along the trenching path. By using a tool for trenching, the use of etching solutions is eliminated, eliminating environmental pollution. Furthermore, wafer processing equipment using tools is cheaper than laser-cut wafer processing equipment, resulting in lower costs. In this application, to ensure that the cutting tool can perform grooving on the wafer processing equipment, a processing method is adopted where the tool directly enters the wafer. The tool enters the wafer directly, and the tool lift-off position is also within the wafer's range, forming a ring of ungrooved area on the outer side of the wafer. This changes the conventional solution where both the tool's entry and lift-off positions are outside the wafer. This tool-based grooving solution allows for the processing of multiple batches of wafers at high speed, eliminates the need for multiple cleaning cycles, causes no environmental pollution, and has low cost due only to tool wear.

[0053] like Figure 3The third aspect of this application provides a control device 300 for wafer trench processing, including a memory 302 and a processor 304. The memory 302 stores programs or instructions that can be run on the processor 304. When the program or instructions are executed by the processor, they implement the steps of the wafer trench processing method provided in the first aspect.

[0054] A fourth aspect of this application provides a readable storage medium having a program and / or instructions stored thereon, which, when executed by a processor, implement the steps of the wafer trench fabrication method provided in the first aspect.

[0055] like Figure 5 As shown, the fifth aspect of this application provides a wafer processing apparatus 400, including: a cutting tool 402 for slotting a wafer; a control device 200 for wafer trenching as provided in the second aspect, and / or a control device 300 for wafer trenching as provided in the third aspect, and / or a readable storage medium as provided in the fourth aspect.

[0056] The wafer processing equipment 400 is a dicing machine.

[0057] The dicing machine's accuracy of ±0.001mm meets the requirements for precision and surface roughness of the grooves. The integrity of glass passivation after dicing is comparable to that of etching. The width of the groove can be selected based on the groove design, allowing for the selection of dicing blades of appropriate thickness. The overall solution is superior to etching. Substrate preparation: Photoresist is applied to the substrate to prevent contamination during cutting. Blade selection: Based on the width of the grooves involved, a dicing blade of appropriate thickness and with edge chipping meeting process requirements is selected. The particle size is generally 3000-4000 mesh. Dicing machine cutting parameters are established, such as dicing depth, cutting speed (30mm / s to 60mm / s), spindle speed (30000 rpm to 60000 rpm), cutting stroke, and cutting protection distance. The cutting method differs somewhat from conventional methods and incorporates improvements. During dicing, each cut must be made directly from the edge of the substrate wafer, and the blade must be lifted in advance before dicing. Product edge recognition identifies the product shape and its position in the dicing machine's coordinate system. Cutting protection is set to a negative value to precisely control the cutting drop and lift points. Cutting area shielding is implemented to precisely control the first cut position and the overall number of cuts. Appropriate drop speed settings ensure cutting quality. This dicing machine replaces the etching process by dicing grooves on silicon single-crystal substrates. After dicing, glass passivation can be performed directly, resulting in fewer processes, lower costs, less environmental pollution, and increased efficiency. It meets the requirements for GPP (Glass Passivated Parts) chip trenches, offering low cost, high efficiency, and pollution-free cutting using pure water.

[0058] In addition, the descriptions in the present application such as "first", "second", etc. are only for the purpose of description and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0059] In the present application, unless otherwise specifically defined and limited, the terms "connection", "fixing" and the like should be understood broadly, for example, "fixing" can be fixed connection, or detachable connection, or integral; can be mechanical connection, or electrical connection; can be directly connected, or indirectly connected through intermediate medium; can be internal communication of two elements or interaction relationship of two elements, unless otherwise specifically limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0060] In addition, the embodiments of various embodiments of the present application can be combined with each other, but it must be based on the fact that the person skilled in the art can realize it, when the combination of the embodiments appears contradictory or unachievable, it should be considered that the combination of the embodiments does not exist, nor within the protection scope claimed by the present application.

[0061] The above is only the preferred embodiment of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method of processing a wafer trench, the method comprising: A wafer processing device comprising a tool, the processing method comprising: ​ identifying the wafer to determine an outer contour of the wafer; obtaining a preset slotting trajectory of the wafer; determining a slotting path based on the preset slotting trajectory of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a tool drop point and a tool lift point, the tool drop point and the tool lift point being disposed on the wafer, the tool drop point and the tool lift point having a first distance from the outer contour of the wafer; controlling the tool to cut the trench on the wafer along the slotting path.

2. The method of claim 1, wherein Before the step of controlling the tool to cut the trench on the wafer along the slotting path, the processing method further comprises: obtaining a thickness of the wafer and a depth of the trench; determining a tool drop height, a tool cutting speed and a tool spindle speed of the tool based on the thickness of the wafer and the depth of the trench.

3. The method of claim 2, wherein the step of etching the trench is performed by dry etching. the tool cutting speed is greater than 30 mm / s and less than or equal to 60 mm / s; and / or the tool spindle speed is greater than or equal to 30000 rpm and less than or equal to 60000 rpm.

4. The method of claim 1, wherein the tool granularity is greater than or equal to 3000 mesh and less than or equal to 4000 mesh.

5. The method of claim 1 to 4, wherein Before the step of identifying the wafer to determine an outer contour of the wafer, the processing method further comprises: coating photoresist on the wafer surface.

6. The method of claim 1 to 4, wherein Before the step of controlling the tool to cut the trench on the wafer along the slotting path, the processing method further comprises: controlling the wafer processing device to suck vacuum.

7. A control device for wafer trench processing, characterized by, A wafer processing device comprising a tool, the control device comprising: an identifying device for identifying the wafer to determine an outer contour of the wafer; an obtaining device for obtaining a preset slotting trajectory of the wafer; a path determining device for determining a slotting path based on the preset slotting trajectory of the wafer and the outer contour of the wafer, the slotting path comprising a slotting direction, a tool drop point and a tool lift point, the tool drop point and the tool lift point being disposed on the wafer, the tool drop point and the tool lift point having a first distance from the outer contour of the wafer; a tool controlling device for controlling the tool to cut the trench on the wafer along the slotting path.

8. A control device for wafer trench processing, characterized by, comprising: a memory storing a program or instructions; a processor, the processor implementing the steps of the wafer trench processing method of any one of claims 1 to 6 when executing the program or instructions.

9. A readable storage medium, on which a program or instructions are stored, characterized in that, the program or instructions, when executed by the processor, implement the steps of the wafer trench processing method of any one of claims 1 to 6.

10. A wafer processing apparatus characterized by comprising: comprising: a tool for slotting the wafer; the control device for wafer trench processing of claim 7; and / or the control device for wafer trench processing of claim 8; and / or the readable storage medium of claim 9.

Images