Sapphire swing plate processing control system based on laser power dynamic adjustment

The sapphire processing control system with dynamic laser power adjustment monitors and coordinates laser energy and cooling in real time, solving the problem of balancing thermal damage and precision in sapphire processing and enabling the mass production of high-precision optical components.

CN121402834BActive Publication Date: 2026-07-03BEIJING STAR ARROW SENSOR TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING STAR ARROW SENSOR TECH CO LTD
Filing Date
2025-09-22
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In sapphire processing, it is difficult to balance thermal damage control with processing accuracy. Existing technologies lack the ability to dynamically adjust multiple parameters, especially in the insufficient coupling control of thickness gradient and temperature field, which makes it difficult to accurately define the range of heat-affected zone and seriously restricts the yield of high-precision optical components.

Method used

A sapphire wafer processing control system based on dynamic laser power adjustment is adopted, including a laser etching main module, a multi-parameter sensing module, a dynamic control module, and a data hub module. The system monitors data in real time through a thickness sensor, an infrared thermal imager, and an optical confocal probe. Using an FPGA real-time processor and an adaptive control algorithm, the system realizes dynamic adjustment of laser energy and coordinated control of the cooling device, establishes a real-time mapping relationship between thickness gradient and temperature field, and performs multi-parameter closed-loop feedback.

Benefits of technology

It achieves effective suppression of thermal damage and simultaneous improvement of surface precision during sapphire material processing, significantly improves the uniformity of material removal, and achieves sub-micron level indicators for surface roughness and geometric tolerances, thereby improving the processing yield and expanding the machinability boundaries of complex optical components.

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Abstract

This invention provides a sapphire wafer processing control system based on dynamic laser power adjustment. By dynamically adjusting the laser energy distribution and the coordinated control of the processing path, it effectively suppresses thermal damage and simultaneously improves surface precision during sapphire material processing. By establishing a real-time mapping relationship between thickness gradient and temperature field, and employing a multi-parameter closed-loop feedback mechanism, the heat-affected zone is precisely defined, thus avoiding remelting and cracking defects caused by heat accumulation in traditional processing. It is particularly suitable for high-precision processing requirements in areas with uneven thickness or edge regions. Adaptive energy distribution significantly improves the uniformity of material removal, enabling the surface roughness and geometric tolerances of optical components to consistently reach sub-micron levels. This globally optimized control strategy not only improves processing yield but also expands the machinability boundaries of complex optical components, providing a reliable technical guarantee for the mass production of high-precision optical devices.
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