Thermal interface structure and method of forming same, package structure

Abstract

This disclosure provides a thermal interface structure, a method for forming the same, and an encapsulation structure. The thermal interface structure has a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component. The thermal contact surface includes a first surface and a second surface opposite each other in a first direction. The thermal interface structure includes: a thermally conductive element extending from the first surface to the second surface in the first direction and including a plurality of thermally conductive sub-components and a gap region defined by the plurality of thermally conductive sub-components; a filling connection structure located on the side of the thermally conductive element in a second direction parallel to the thermal contact surface, filling the gap region and connecting to the thermally conductive element, wherein the filling connection structure includes an elastic filling layer and connecting layers located on opposite sides of the elastic filling layer in the first direction; and an edge seal surrounding the thermally conductive element and the filling connection structure in a direction parallel to the thermal contact surface.

Description

Technical Field

[0001] The embodiments disclosed herein relate to, but are not limited to, the field of semiconductor packaging technology, and in particular to a thermal interface structure and a method for forming the same, and a packaging structure. Background Technology

[0002] In semiconductor packaging technology, chips are packaged to achieve protection, physical and / or electrical connections, and heat dissipation. Generally, a heat sink is connected to the chip using a thermal interface material. Heat from the chip is conducted to the heat sink through the thermal interface material and then dissipated through the heat sink. The performance of the thermal interface material has a significant impact on the heat dissipation performance of the chip package. With the continuous development of semiconductor technology, chip sizes are increasing and power consumption is rising, leading to a growing demand for high-performance thermal interface materials. Summary of the Invention

[0003] A thermal interface structure is provided according to at least one embodiment of the present disclosure, having a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component. The thermal contact surface includes a first surface and a second surface opposite each other in a first direction. The thermal interface structure includes: a thermally conductive element extending from the first surface to the second surface in the first direction and including a plurality of thermally conductive sub-elements and a gap region defined by the plurality of thermally conductive sub-elements; a filler connection structure located on the side of the thermally conductive element in a second direction parallel to the thermal contact surface, filling the gap region and connecting to the thermally conductive element, wherein the filler connection structure includes an elastic filler layer and connecting layers located on opposite sides of the elastic filler layer in the first direction; and an edge seal surrounding the thermally conductive element and the filler connection structure in a direction parallel to the thermal contact surface.

[0004] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the first surface and the second surface of the thermal contact surface each include the thermally conductive surface of the thermally conductive element and the connecting surface of the connecting layer.

[0005] In a thermal interface structure provided according to at least one embodiment of the present disclosure, the thermally conductive surface and the connecting surface are alternately arranged in the second direction.

[0006] According to at least one embodiment of the present disclosure, the thermal interface structure includes: a thermally conductive middle portion surrounded by the elastic filler layer in the second direction, and the elastic filler layer is adhered to the thermally conductive middle portion; and a first thermally conductive end portion and a second thermally conductive end portion located on opposite sides of the thermally conductive middle portion in the first direction, respectively extending beyond the opposite surface of the elastic filler layer in the first direction, and connected to the connecting layer.

[0007] According to at least one embodiment of the present disclosure, the thermal interface structure includes a connection layer comprising: a first connection sublayer located on one side of the elastic filler layer in the first direction, surrounding the first thermally conductive end in the second direction, and connected to the first thermally conductive end; and a second connection sublayer located on the other side of the elastic filler layer in the first direction, surrounding the second thermally conductive end in the second direction, and connected to the second thermally conductive end.

[0008] The thermal interface structure provided according to at least one embodiment of the present disclosure has at least one of the following features: the surface of the first connecting sublayer and the surface of the first thermally conductive end are flush with each other in the second direction; and the surface of the second connecting sublayer and the surface of the second thermally conductive end are flush with each other in the second direction.

[0009] In a thermal interface structure provided according to at least one embodiment of the present disclosure, the connecting layer includes a solder layer and is soldered to the first thermally conductive end and the second thermally conductive end.

[0010] In a thermal interface structure provided according to at least one embodiment of the present disclosure, the first thermally conductive end and the second thermally conductive end each include a plating layer configured to be welded to the connecting layer.

[0011] In a thermal interface structure provided according to at least one embodiment of the present disclosure, the thickness of the elastic filling layer in the first direction is greater than the thickness of the connecting layer in the first direction.

[0012] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the orthogonal projections of the thermally conductive element and the filling connection structure on a reference plane parallel to the first direction are located within the orthogonal projection of the edge seal on the reference plane, and the thermally conductive element and the filling connection structure are located in a region sealed by the edge seal in a direction parallel to the thermal contact surface.

[0013] According to at least one embodiment of the thermal interface structure provided in this disclosure, the plurality of heat-conducting sub-components are spaced apart from each other and arranged in an array in a direction parallel to the thermal contact surface, each of the plurality of heat-conducting sub-components having a columnar structure and being surrounded and covered by the filling connection structure; or each of the plurality of heat-conducting sub-components having a sheet-like structure, and the plurality of heat-conducting sub-components being spaced apart in the second direction and alternately arranged with the filling connection structure; or the heat-conducting element having a grid-like structure, each of the plurality of heat-conducting sub-components comprising a plurality of portions of the heat-conducting element extending in different directions and intersecting with each other, and the gap region comprising a hollow region defined by the intersection of the plurality of heat-conducting sub-components.

[0014] In the thermal interface structure provided according to at least one embodiment of the present disclosure, each adjacent thermally conductive sub-component of the plurality of thermally conductive components is arranged with the same spacing.

[0015] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the thermal conductive element is an elastic thermal conductive element, and the resilience of the elastic thermal conductive element is in the range of 50% to 100%.

[0016] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the material orientation of the heat-conducting element is consistent with the heat conduction direction between the heat-generating device and the heat-dissipating component.

[0017] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the material of the thermally conductive element includes at least one of carbon fiber and graphene.

[0018] In a thermal interface structure provided according to at least one embodiment of the present disclosure, the elastic filler layer comprises an insulating material with adhesive properties.

[0019] In the thermal interface structure provided according to at least one embodiment of the present disclosure, the resilience of the elastic filling layer ranges from 10% to 100%.

[0020] At least one embodiment of this disclosure provides a packaging structure, including: a chip component including one or more chips, the chip component being the heat-generating device; a heat dissipation component disposed on one side of the chip component in a first direction and configured to dissipate heat from the chip component; and a thermal interface structure as described in any one of the preceding claims, disposed between the chip component and the heat dissipation component in the first direction, connecting the chip component and the heat dissipation component, and configured to conduct heat generated by the chip component to the heat dissipation component.

[0021] In a packaging structure provided according to at least one embodiment of the present disclosure, the first surface and the second surface of the thermal contact surface of the thermal interface structure are respectively welded to and in contact with the chip component and the heat dissipation component.

[0022] In a packaging structure provided according to at least one embodiment of the present disclosure, at the thermal contact surface of the thermal interface structure, the connecting surface of the connecting layer is welded to the chip component and the heat dissipation component respectively, and the thermally conductive surface of the thermally conductive component is in contact with the chip component and the heat dissipation component respectively.

[0023] In a packaging structure provided according to at least one embodiment of the present disclosure, a chip plating layer is provided on the surface of the chip component near the heat dissipation component, the chip plating layer is welded to the connection layer of the thermal interface structure, and is in contact with the heat-conducting component.

[0024] In a packaging structure provided according to at least one embodiment of the present disclosure, the soldering temperature of the connection layer of the thermal interface structure is configured to be lower than the reflow soldering temperature of the conductive terminals of the chip component and higher than the operating temperature of the chip.

[0025] In a packaging structure provided according to at least one embodiment of the present disclosure, the thermal conductive element and the filling connection structure are located in a space enclosed and sealed by the edge seal, the chip component and the heat dissipation component.

[0026] At least one embodiment of this disclosure provides a method for forming a thermal interface structure having a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component. The thermal contact surface includes a first surface and a second surface opposite each other in a first direction. The forming method includes: forming a thermally conductive element, the thermally conductive element including a plurality of thermally conductive sub-elements and a gap region defined by the plurality of thermally conductive sub-elements; forming a filling connection structure located on the side of the thermally conductive element in a second direction parallel to the thermal contact surface, filling the gap region and connecting to the thermally conductive element, wherein the filling connection structure includes an elastic filling layer and connecting layers located on opposite sides of the elastic filling layer in the first direction; and forming an edge seal to surround the thermally conductive element and the filling connection structure in a direction parallel to the thermal contact surface.

[0027] According to at least one embodiment of the present disclosure, the method for forming a thermal interface structure includes: forming an elastic filler material layer to surround the heat-conducting element; removing a first end portion and a second end portion of the elastic filler material layer to expose a first heat-conducting end and a second heat-conducting end of the heat-conducting element, respectively; the remaining portion of the elastic filler material layer forming the elastic filler layer and surrounding the heat-conducting middle portion of the heat-conducting element; and forming a first connecting sublayer and a second connecting sublayer on opposite sides of the elastic filler layer to cover and connect to the first heat-conducting end and the second heat-conducting end of the heat-conducting element, respectively; the first connecting sublayer and the second connecting sublayer together constituting the connecting layer.

[0028] The method for forming a thermal interface structure according to at least one embodiment of the present disclosure further includes: before forming the connecting layer, performing surface treatment on the first thermally conductive end and the second thermally conductive end of the thermally conductive member to promote the subsequent connection of the first thermally conductive end and the second thermally conductive end with the connecting layer.

[0029] In a method for forming a thermal interface structure according to at least one embodiment of the present disclosure, the connecting layer includes a solder layer, and the surface treatment includes forming a plating layer on the sidewall surface of the first thermally conductive end and the thermally conductive end by a plating process.

[0030] In the thermal interface structure and its formation method and packaging structure of the present disclosure embodiments, the thermal interface structure has high thermal conductivity, can provide an efficient thermal conduction channel between the heat-generating device and the heat-dissipating component, and can provide a flexible connection between the heat-generating device and the heat-dissipating component, thereby helping to avoid or reduce additional stress on the heat-generating device, and thus improving the heat dissipation performance and reliability of the device. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of this disclosure and are not intended to limit this disclosure.

[0032] Figure 1A and Figure 1B Schematic cross-sectional views of some chip packaging structures are shown.

[0033] Figure 2A A schematic cross-sectional view of a thermal interface structure according to some embodiments of the present disclosure is shown; Figure 2B and Figure 2C A schematic partial enlarged view of a thermal interface structure according to some embodiments of the present disclosure is shown.

[0034] Figure 3A and Figure 3B A schematic plan view of a thermal interface structure according to some embodiments of the present disclosure is shown.

[0035] Figure 4 A schematic plan view of a thermal interface structure according to other embodiments of the present disclosure is shown.

[0036] Figure 5 A schematic plan view of a thermal interface structure according to some embodiments of the present disclosure is shown.

[0037] Figure 6 A schematic cross-sectional view of a packaging structure according to some embodiments of the present disclosure is shown.

[0038] Figure 7 A schematic cross-sectional view of a packaging structure according to other embodiments of the present disclosure is shown. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0040] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0041] Figure 1A A schematic cross-sectional view of a chip packaging structure is shown; Figure 1B A schematic cross-sectional view of another chip packaging structure is shown. Figure 1A and Figure 1B This illustrates the application of different types of thermal interface material layers in chip packaging.

[0042] refer to Figure 1A The chip packaging structure includes a die 1, a thermal interface material layer 2, and a heat sink 3. The heat sink 3 is attached to the heat dissipation surface of the die 1 via the thermal interface material layer 2. The thermal interface material layer 2 forms a thermally conductive channel between the die 1 and the heat sink 3. The heat generated by the die 1 is conducted to the heat sink 3 through the thermal interface material layer 2 and then dissipated through the heat sink 3. For example, the thermal interface material layer 2 may include conventional thermal interface materials, the main material of which typically includes organic substrates such as silicone oil; for example, the thermal interface material layer may also include filler particles dispersed in the organic substrate. However, the thermal conductivity of such thermal interface materials is poor, making it difficult to meet the rapidly increasing demands of current chip heat flux density and total power consumption. In some examples, this thermal interface material can be replaced with materials such as diamond to form a high thermal conductivity channel between the die and the heat sink. However, such materials are highly rigid, forming a rigid connection between the die and the heat sink. During thermal or mechanical shock, this rigid connection is prone to failure and cannot maintain high-performance thermal conductivity for extended periods.

[0043] refer to Figure 1B In other examples, the thermal interface material layer 2 includes a main body 2a and a containment portion 2b. The material of the main body 2a may include highly thermally conductive materials such as liquid metal, graphite, and carbon fiber to improve the heat dissipation performance of the thermal interface material layer. The containment portion 2b surrounds the main body 2a. However, this type of thermal interface material layer may have reliability issues. For example, during impact vibration, the liquid metal is prone to leakage, posing a risk of electrical conductivity; furthermore, the material of the main body 2a may be unevenly distributed, potentially causing uneven stress on the core.

[0044] As the connecting material between the chip and the heat sink, the thermal interface material not only has a significant impact on the thermal resistance of the entire heat conduction path, but also has a certain impact on the stress on the chip and the warpage of the overall packaging structure.

[0045] This disclosure provides a thermal interface structure with high thermal conductivity, which can provide an efficient heat conduction channel between the heat-generating device and the heat-dissipating component, and can provide a flexible connection between the heat-generating device and the heat-dissipating component, thereby helping to avoid or reduce additional stress on the heat-generating device.

[0046] For example, embodiments of this disclosure provide a thermal interface structure having a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component. The thermal contact surface includes a first surface and a second surface opposite each other in a first direction. The thermal interface structure includes a thermally conductive element, a filling connection structure, and an edge seal. The thermally conductive element extends from the first surface to the second surface in the first direction and includes a plurality of thermally conductive sub-elements and a gap region defined by the plurality of thermally conductive sub-elements. The filling connection structure is located on the side of the thermally conductive element in a second direction parallel to the thermal contact surface, fills the gap region, and is connected to the thermally conductive element. The filling connection structure includes an elastic filling layer and connecting layers located on opposite sides of the elastic filling layer in the first direction. The edge seal surrounds the thermally conductive element and the filling connection structure in a direction parallel to the thermal contact surface.

[0047] In the thermal interface structure of this embodiment, the heat-conducting element extends from a first surface of the thermal contact surface to a second surface, thereby providing an efficient heat conduction channel between the heat-generating device and the heat-dissipating component. A filling connection structure is disposed in the gap region of the heat-conducting element to improve the structural integrity and stability of the thermal interface structure. The filling connection structure includes an elastic filling layer, thereby providing a flexible connection between the heat-generating device and the heat-dissipating component, avoiding or reducing additional stress on the chip components. The connection layer of the filling connection structure provides an effective connection between the filling connection structure and the heat-conducting element, as well as between the thermal interface structure and the heat-generating device and the heat-dissipating component. Furthermore, an edge seal surrounds the heat-conducting element and the filling connection structure, thereby providing protection for the heat-conducting element and the filling connection structure, and further improving the overall structural stability and reliability of the thermal interface structure.

[0048] Figure 2A A schematic cross-sectional view of a thermal interface structure according to some embodiments of the present disclosure is shown; Figure 2B Show Figure 2A A magnified view of region A in the thermal interface structure.

[0049] refer to Figure 2A and Figure 2BIn some embodiments, the thermal interface structure 200 includes a thermally conductive element 100, a filler connection structure 103, and an edge seal 105. The thermal interface structure 200 is configured to be applied between a heat-generating device and a heat-dissipating component, serving as an interface structure between the two to provide a heat conduction path. For example, the thermal interface structure 200 can be applied in a chip package, positioned between a chip component (which serves as a heat-generating device) and a heat-dissipating component, to improve the heat dissipation performance of the chip package.

[0050] The thermal interface structure 200 has a thermal contact surface TS configured to contact a heat-generating device and a heat-dissipating component. For example, the thermal contact surface TS includes a first surface S1 and a second surface S2 opposite to each other in a first direction D1. The first surface S1 and the second surface S2 may be configured to contact the heat-generating device and the heat-dissipating component, respectively, or vice versa, and a thermally conductive channel is formed between the first surface S1 and the second surface S2.

[0051] In some embodiments, the heat-conducting element 100 extends from a first surface S1 to a second surface S2 in a first direction D1, and includes a plurality of heat-conducting sub-elements 10 and a gap region GR defined by the plurality of heat-conducting sub-elements 10. The heat-conducting element 100 penetrates the thermal interface structure in the first direction D1, thereby improving the thermal conductivity of the thermal interface structure and facilitating the formation of an efficient heat conduction channel between the heat-generating device and the heat dissipation component.

[0052] The filling connection structure 103 is located on the side of the heat-conducting element 100 in a second direction D2, which is generally parallel to the thermal contact surface TS. It fills the gap region GR defined by the plurality of heat-conducting sub-elements 10 and is connected to the heat-conducting element 100. The second direction D2 intersects with the first direction D1, for example, it is generally perpendicular to each other. In this document, the second direction generally refers to various directions that are generally parallel to the thermal contact surface. For example, in the illustrated example, the first direction is a vertical direction, and the second direction includes various horizontal directions; in other words, the second direction may include various horizontal directions that are generally perpendicular to the first direction.

[0053] In some embodiments, a plurality of heat-conducting sub-components 10 are spaced apart in the second direction D2. The gap region GR includes the gap between adjacent heat-conducting sub-components 10, or may also include the space around the edge heat-conducting sub-components 10, for example, the gap between the edge heat-conducting sub-components 10 and the edge seal 105. In this document, the spaced arrangement of the plurality of heat-conducting sub-components includes both cases where the plurality of heat-conducting sub-components are separated from each other (i.e., not connected to each other) and cases where the plurality of heat-conducting sub-components are connected to each other and form a hollow area.

[0054] In some embodiments, the filling connection structure 103 located on the side of the heat-conducting element 100 in the second direction D2 includes the filling connection structure 103 being located on one or more sides of each heat-conducting sub-element 10 in the second direction D2. For example, the filling connection structure 103 is provided on at least two sides of each heat-conducting sub-element 10, that is, the filling connection structure 103 surrounds the heat-conducting sub-element 10 from the at least two sides; or, each heat-conducting sub-element 10 can be completely surrounded by the filling connection structure 103.

[0055] An edge seal 105 surrounds (e.g., completely surrounds) the heat-conducting element 100 and the filling connection structure 103 in a direction parallel to the thermal contact surface TS. For example, the thermal interface structure 200 includes a main region and a peripheral region, with the edge seal 105 located in the peripheral region and possibly in a closed ring shape, and the main region being the area defined by the inner sidewall of the edge seal 105. The heat-conducting element 100 and the filling connection structure 103 are located in the main region, i.e., in the region surrounded by the edge seal 105. In some embodiments, a plurality of heat-conducting sub-elements 10 of the heat-conducting element 100 are spaced apart in the main region, for example, they may be evenly distributed in the main region, and the filling connection structure 103 fills the space in the main region not occupied by the heat-conducting element 100.

[0056] Continue to refer to Figure 2A and Figure 2B In some embodiments, the filling connection structure 103 may include an elastic filling layer 101 and a connecting layer 102. The connecting layer 102 is located on opposite sides of the elastic filling layer 101 in a first direction D1.

[0057] The filler connection structure includes an elastic filler layer, enabling the thermal interface structure to form a flexible connection between the heat-generating device (e.g., a chip component) and the heat dissipation component, avoiding or reducing additional stress on the heat-generating device. For example, the thermal interface structure can compensate for warping deformation when the chip component warps, effectively absorbing the gaps caused by chip component warping. That is, when the chip component warps, it can change shape with the spatial changes between the chip component and the heat dissipation component, thereby avoiding additional stress on the chip component. Moreover, the filler connection structure includes a connecting layer, thereby providing both a flexible connection and an effective connection with the thermally conductive component, the heat-generating device, and the heat dissipation component.

[0058] In some embodiments, the first and second surfaces of the thermal contact surface of the thermal interface structure each include a thermally conductive surface of the thermally conductive element and a connecting surface of the connecting layer. The thermal contact surface includes both a thermally conductive surface and a connecting surface, thereby forming an efficient thermal conduction channel between the heat-generating device and the heat-dissipating component, reducing the contact thermal resistance between the thermal interface structure and the heat-generating device and the heat-dissipating component while ensuring the connection stability between the thermal interface structure and the heat-generating device and the heat-dissipating component.

[0059] In some embodiments, the thermally conductive surface and the connecting surface are alternately arranged in the second direction. For example, the alternating arrangement of the thermally conductive surface and the connecting surface can ensure that each region of the thermal interface structure has good heat dissipation performance and forms an effective connection with the heat-generating device and the heat dissipation component, and can also help to make the heat-generating device (e.g., chip component) be subjected to uniform force.

[0060] refer to Figure 2A and Figure 2B For example, the thermal contact surface TS of the thermal interface structure 200 mainly includes the corresponding surfaces of the thermally conductive element 100 and the connecting layer 102. For example, the first surface S1 and the second surface S2 of the thermal contact surface TS each include the thermally conductive surface 100s of the thermally conductive element 100 and the connecting surface 103s of the connecting layer 102. The thermally conductive surface 100s includes the corresponding surfaces of a plurality of thermally conductive sub-elements 10. For example, the plurality of thermally conductive sub-elements 10 and the filling connecting structure 103 are alternately arranged in a direction parallel to the thermal contact surface. Correspondingly, the thermally conductive surface 100s and the connecting surface 103s are alternately arranged in a direction parallel to the thermal contact surface.

[0061] In some embodiments, the heat-conducting component includes a heat-conducting middle portion, a first heat-conducting end portion, and a second heat-conducting end portion. The heat-conducting middle portion is surrounded by an elastic filler layer in a second direction, and the elastic filler layer is adhered to the heat-conducting middle portion. The first heat-conducting end portion and the second heat-conducting end portion are located on opposite sides of the heat-conducting middle portion in a first direction, respectively extending beyond the opposite surface of the elastic filler layer in the first direction, and are connected to the connecting layer.

[0062] In some embodiments, the connecting layer includes a first connecting sublayer and a second connecting sublayer. The first connecting sublayer is located on one side of the elastic filler layer in a first direction and surrounds and connects to the first thermally conductive end in a second direction. The second connecting sublayer is located on the other side of the elastic filler layer in the first direction and surrounds and connects to the second thermally conductive end in the second direction.

[0063] In some embodiments, the surface of the first connecting sublayer is flush with the surface of the first thermally conductive end in a second direction; the surface of the second connecting sublayer is flush with the surface of the second thermally conductive end in a second direction.

[0064] For example, the connection layer 102 includes a first connection sublayer 102a and a second connection sublayer 102b, which are located on opposite sides of the elastic filler layer 101 in the first direction D1 and are connected to the heat-conducting element 100. For example, the first connection sublayer 102a and the second connection sublayer 102b may also be configured to connect a heat-generating device and a heat dissipation component.

[0065] For example, the heat-conducting element 100 includes a heat-conducting middle portion 100c and a first heat-conducting end portion 100a and a second heat-conducting end portion 100b located on opposite sides of the heat-conducting middle portion 100c in a first direction D1. Figure 2B The various parts of the heat-conducting component 100 are divided by dashed lines. These dashed lines are for ease of description only and do not indicate that there are clearly visible interfaces between the various parts of the heat-conducting component. In some embodiments, multiple parts of the various heat-conducting sub-components of the heat-conducting component 100 are connected to each other and are integrally formed.

[0066] In some embodiments, the elastic filler layer 101 is disposed on the side of the thermally conductive center 100c of the thermally conductive member 100, for example, it may be adhered to the thermally conductive center 100c. The thermally conductive center 100c may be surrounded by the elastic filler layer 101 in the second direction D2.

[0067] The first thermally conductive end 100a and the second thermally conductive end 100b extend beyond the opposing surfaces of the elastic filling layer 101 in the first direction D1, and are connected to the connecting layer 102. For example, the first connecting sublayer 102a is located on one side of the elastic filling layer 101 in the first direction D1, surrounds the first thermally conductive end 100a in the second direction D2, and is connected to the first thermally conductive end 100a. The second connecting sublayer 102b is located on the other side of the elastic filling layer 101 in the first direction D1, surrounds the second thermally conductive end 100b in the second direction D2, and is connected to the second thermally conductive end 100b.

[0068] In some embodiments, the surface of the first connecting sublayer 102a away from the elastic filling layer 101 is substantially flush with the surface of the first thermally conductive end 100a away from the thermally conductive middle portion 100c in the second direction D2. In some embodiments, the surface of the second connecting sublayer 102b away from the elastic filling layer 101 is substantially flush with the surface of the second thermally conductive end 100b away from the thermally conductive middle portion 100c in the second direction D2. For example, the surfaces of the first connecting sublayer 102a and the second connecting sublayer 102b are the connecting surfaces 103s of the filling connecting structure 103; the surfaces of the first thermally conductive end 100a and the second thermally conductive end 100b are the thermally conductive surfaces 100s of the thermally conductive element 100.

[0069] In some embodiments, the connection layer includes a solder layer and is soldered to the first thermally conductive end and the second thermally conductive end. In some embodiments, the first thermally conductive end and the second thermally conductive end each include a plating layer configured to be soldered to the connection layer.

[0070] In some embodiments, the elastic filler layer 101 adheres to the thermally conductive center 100c and is connected to the thermally conductive member 100; the connecting layer 102 is connected to the first thermally conductive end 100a and the second thermally conductive end 100b by welding. For example, the elastic filler layer 101 comprises an adhesive material, thereby allowing it to adhere to the thermally conductive center 100c. The connecting layer 102 may include a solder layer, such as a metal solder layer, for welding multiple thermally conductive sub-components, and can be used for welding heat-generating devices and heat-dissipating components.

[0071] In some embodiments, the heat-conducting element 100 includes a weldable material, allowing it to be directly welded to the connecting layer 102. In other embodiments, the ends of the heat-conducting element 100 may be surface-treated to facilitate welding between the heat-conducting element 100 and the connecting layer 102.

[0072] For example, Figure 2C The diagram schematically shows the end of the heat-conducting component 100 having a surface-treated coating for welding. For example... Figure 2C As shown, the first heat-conducting end 100a and the second heat-conducting end 100b each include a plating layer 10p configured to be welded to the connecting layer 102. The plating layer 10p may be or include a metallic plating layer, such as a gold plating layer. For example, the plating layer 10p is disposed on the sidewall surfaces of both ends of each heat-conducting sub-component 10 to be welded to the first connecting sub-layer 102a and the second connecting sub-layer 102b, respectively. In some embodiments, the plating layer may not be disposed on the surface of the heat-conducting middle portion 100c.

[0073] In some embodiments, the thickness of the elastic filler layer in the first direction is greater than the thickness of the connecting layer in the first reverse direction.

[0074] For example, the connection layer 102 can be configured to have a relatively thin thickness, as long as the connection layer 102 can be effectively connected to the heat-conducting component 100 and can effectively connect the thermal contact surface of the thermal interface structure 200 with the heat-generating device and the heat dissipation component. For example, making the connection layer 102 relatively thin can achieve effective connection while keeping the overall thickness of the thermal interface structure small, which is beneficial for reducing the overall device size. For example, when the thermal interface structure is applied in a chip packaging structure, it can help reduce the overall size of the chip packaging structure.

[0075] In some embodiments, in the filled connection structure, the thickness of the elastic filler layer 101 in the first direction D1 may be greater than the thickness of the connecting layer 102 in the first direction D1 (i.e., the sum of the thicknesses of the first connecting sub-layer 102a and the second connecting sub-layer 102b). For example, setting the thickness of the elastic filler layer 101 to be greater than the thickness of the connecting layer 102 can help ensure that the filled connection structure as a whole has better elasticity.

[0076] In some embodiments, the thermally conductive element is an elastic thermally conductive element, and the resilience of the elastic thermally conductive element ranges from 50% to 100%. In some embodiments, the material orientation of the thermally conductive element is consistent with the thermal conduction direction between the heat-generating device and the heat-dissipating component. For example, the material of the thermally conductive element includes at least one of carbon fiber and graphene.

[0077] For example, the heat-conducting element 100 is an elastic heat-conducting element and includes a resilient high thermal conductivity material, i.e., a material with a high thermal conductivity and good resilience or elasticity. For example, the heat-conducting element 100 can serve as the main heat-conducting component of the thermal interface structure 200 to form an efficient heat conduction channel between the heat-generating device and the heat-dissipating component. For example, the thermal conductivity of the heat-conducting element 100 can be higher than that of the elastic filling layer 101, or the thermal conductivity of the heat-conducting element 100 can also be higher than that of the connecting layer 102; or the thermal conductivity of the connecting layer 102 can also be close to that of the heat-conducting element 100. For example, the thermal conductivity of the heat-conducting element 100 can be above about 300 W / (m·K), or above 1000 W / (m·K). In this document, "above a certain value" means greater than or equal to that value.

[0078] It should be understood that "resilience" or "elasticity" refers to the ability of a material to recover or tend to recover its initial state (e.g., its original shape and size) after being deformed by compression, stretching, bending, etc. under the action of external force, when the external force is removed.

[0079] In some embodiments, the springback rate of the heat-conducting component 100 may be greater than 50%, for example, within the range of about 50% to about 100%, about 60% to about 100%, about 70% to about 100%, about 80% to about 100%, or about 90% to about 100%. In this document, the springback rate of a component refers to the ratio of the springback amount to the deformation; the deformation refers to the deformation of the component when subjected to an external force, and the springback amount refers to the amount of springback recovered by the component when the external force is removed. For example, taking compression deformation as an example, if a component has an initial thickness a, a thickness b after being compressed by an external force, and a thickness c after springback after the external force is removed; then the deformation of the component under external force is ab, the springback amount is cb; the springback rate is (cb) / (ab), and the residual deformation is ac. It should be understood that the calculation logic for the springback rate of tensile deformation is similar to that of compression deformation. The higher the springback rate of a component, the closer the component is to its initial state after springback.

[0080] In some embodiments, the resilience of the heat-conducting element 100 may be due to the inherent resilience of the material it comprises; or, the heat-conducting element 100 may also possess resilience due to the structural characteristics of its material. For example, the material of the heat-conducting element 100 has a laminated structure, which may have elasticity similar to that of a spring structure.

[0081] In some embodiments, the heat-conducting element 100 is elastic, which can also help improve the flexible contact between the thermal interface structure and the heat-generating device and the heat-dissipating component, forming a flexible connection between the heat-generating device and the heat-dissipating component, thereby avoiding or reducing additional stress on the heat-generating device. For example, it can absorb the gaps and stress caused by warping when the heat-generating device warps, thus avoiding additional stress on the heat-generating device.

[0082] In some embodiments, the heat-conducting element 100 may include heat-conducting materials with high thermal conductivity and good resilience, such as carbon fiber (e.g., carbon fiber cloth) and graphene. The material orientation of the heat-conducting element 100 is consistent with the heat conduction direction of the thermal interface structure 200. For example, the heat-conducting element 100 has optimal thermal conductivity in its material orientation, and its material orientation is consistent with the heat conduction direction, thereby ensuring that the heat-conducting element 100 has high thermal conductivity. The material orientation of the heat-conducting element 100 refers to the direction of extension or stacking of its material. For example, when the heat-conducting element 100 includes carbon fiber, its material orientation refers to the length extension direction of the fiber; when the heat-conducting element 100 includes graphene material with a layered structure, its material orientation refers to the stacking direction of the layered structure. Consistency between the material orientation and the heat conduction direction includes cases where the material orientation and the heat conduction direction are exactly the same or substantially the same.

[0083] For example, the heat conduction direction of the thermal interface structure 200 may be or include the direction from the first surface S1 to the second surface S2, i.e., the first direction D1 shown. For example, the material orientation of the heat conductor 100 is also approximately in the first direction D1. The alignment of the material orientation of the heat conductor 100 with the heat conduction direction maximizes the utilization of its thermal conductivity, giving the heat conductor 100 excellent thermal conductivity and enabling the establishment of an efficient heat conduction channel between the heat-generating device and the heat dissipation component.

[0084] In some embodiments, the filler connection structure 103 connects multiple heat-conducting sub-components 10 of the heat-conducting component 100 to maintain the overall material orientation of the heat-conducting component 100 and the structural integrity and stability of the thermal interface structure. Moreover, the elastic filler layer of the filler connection structure 103 has good resilience, thereby providing a flexible connection between the heat-generating device and the heat-dissipating component.

[0085] In some embodiments, the elastic filler layer comprises an adhesive insulating material. For example, the resilience of the elastic filler layer ranges from 10% to 100%.

[0086] For example, the elastic filler layer 101 includes an adhesive material, thereby allowing it to adhere stably to the plurality of heat-conducting sub-components 10 of the heat-conducting element 100, maintaining the overall orientation of the heat-conducting material and the material integrity and structural stability of the thermal interface structure. The elastic filler layer 101 also has resilience, for example, the ability to rebound after being compressed. In some embodiments, the resilience of the elastic filler layer 101 may be greater than, approximately equal to, or less than the resilience of the heat-conducting element 100. For example, the resilience of the elastic filler layer 101 may be greater than 10%, greater than 20%, greater than 30%, or greater than 40%, for example, in the range of about 10% to 100%; for example, the resilience of the elastic filler layer 101 may be greater than 50%, for example, in the range of about 50% to 100%, about 60% to about 100%, about 70% to about 100%, about 80% to about 100%, or about 90% to about 100%. In some embodiments, the elastic filler layer 101 may also have good thermal conductivity to assist the heat-conducting component 100 in providing higher thermal conductivity. In some embodiments, the elastic filler layer 101 may be an insulating material to prevent the first connecting sublayer 102a and the second connecting sublayer 102b from being electrically connected through the elastic filler layer 101.

[0087] For example, in the filled connection structure 103, the elastic filler layer 101 includes an adhesive insulating material, which may include organic and / or inorganic insulating materials. For example, the elastic filler layer 101 may include an organic substrate, which may include polymer materials such as silicone oil; for example, the elastic filler layer 101 may also include thermally conductive fillers dispersed in the organic substrate, such as inorganic fillers such as aluminum nitride and zinc oxide. For example, the elastic filler layer 101 may include materials such as thermally conductive silicone grease, thermally conductive gel, and thermally conductive adhesive.

[0088] In some embodiments, the orthographic projection of the heat-conducting element and the filling connection structure onto a reference plane parallel to the first direction lies within the orthographic projection of the edge seal onto the reference plane, and the heat-conducting element and the filling connection structure lie within the area sealed by the edge seal in a direction parallel to the thermal contact surface.

[0089] For example, the edge seal 105 surrounds and protects the heat-conducting element 100 and the filling connection structure 103 to ensure the structural integrity and stability of the thermal interface structure. For example, the orthogonal projection of the heat-conducting element 100 and the filling connection structure 103 onto a reference plane parallel to the first direction D1 lies within the orthogonal projection of the edge seal 105 onto said reference plane. For example, the heat-conducting element 100 and the filling connection structure 103 are located within the area sealed by the edge seal 105 in a direction parallel to the thermal contact surface.

[0090] In some embodiments, the edge seal 105 can improve the structural stability of the thermal interface structure. For example, the edge seal 105 is configured to prevent material leakage in the filler connection structure 103, such as preventing leakage of material debris, especially conductive debris, that may be generated in the filler connection structure 103; for example, the edge seal 105 can prevent leakage of conductive debris from the thermally conductive element 100 and / or debris leakage from the connection layer 102 during welding or use, thereby avoiding impact on device reliability due to unintended conductivity caused by such debris. For example, the edge seal 105 can form effective protection during welding and long-term high-temperature use to ensure the structural stability of the thermal interface structure 200. For example, the edge seal 105 can be an elastic seal and includes an insulating material, such as an elastic sealant.

[0091] In some embodiments, the plurality of heat-conducting sub-components of the heat-conducting element may have any suitable shape or arrangement. For example, the plurality of heat-conducting sub-components are spaced apart from each other and arranged in an array in a direction parallel to the thermal contact surface, each of the plurality of heat-conducting sub-components having a columnar structure and being surrounded and covered by a filling connection structure; or the plurality of heat-conducting sub-components each having a sheet-like structure, and the plurality of heat-conducting sub-components are spaced apart in a second direction and alternately arranged with the filling connection structure; or the heat-conducting element has a grid-like structure, the plurality of heat-conducting sub-components each including a plurality of portions of the heat-conducting element extending in different directions and intersecting with each other, and the gap region including a hollow area defined by the intersection of the plurality of heat-conducting sub-components.

[0092] In some embodiments, adjacent thermally conductive sub-components of the thermally conductive element are arranged at the same spacing. This facilitates the uniform distribution of the multiple thermally conductive sub-components in the main body region, thereby enabling each region of the thermal interface structure to have uniform thermal conductivity and ensuring that the heat-generating devices (e.g., chip components) in contact with it are subjected to uniform stress.

[0093] Figure 3A and Figure 3B A plan view of a thermal interface structure according to some embodiments of the present disclosure is shown, wherein Figure 3A For along Figure 2A A plan view captured by the plane containing the intermediate connecting layer. Figure 3B This is a plan view taken along the plane containing the elastic filler layer.

[0094] refer to Figure 3A and Figure 3B The thermal interface structure 200 includes a main body region R1 and a peripheral region R2. The heat-conducting element 100 and the filling connection structure 103 are located in the main body region R1, and the edge seal 105 is located in the peripheral region R2 and surrounds and seals the main body region R1.

[0095] In some embodiments, the heat-conducting component 100 includes a plurality of heat-conducting sub-components 10, which are spaced apart from each other, for example, arranged in an array along a second direction D2 parallel to the thermal contact surface. In some embodiments, each heat-conducting sub-component 10 may have a columnar structure, for example, it may be cylindrical or other types of columnar; for example, from a planar view, the planar shape of the heat-conducting sub-component 10 may be circular. Each of the plurality of heat-conducting sub-components 10 is surrounded and covered by a filling connection structure 103. As described above, the second direction D2 includes a plurality of horizontal directions, for example, it may include a first sub-direction D21 and a second sub-direction D22. For example, the plurality of heat-conducting sub-components 10 may be arranged in an array including multiple rows and columns along the first sub-direction D21 and the second sub-direction D22.

[0096] In some embodiments, a plurality of heat-conducting sub-components 10 may be uniformly distributed in the main body region R1. For example, the plurality of heat-conducting sub-components 10 may have substantially the same dimensions (e.g., width, diameter, area, etc.). Taking a cylindrical heat-conducting sub-component as an example, from a plan view, the plurality of heat-conducting sub-components 10 may have substantially the same diameter and therefore substantially the same area. In some embodiments, the plurality of heat-conducting sub-components 10 may be arranged at equal intervals; for example, the first interval d1 between adjacent heat-conducting sub-components 10 in each row of heat-conducting sub-components arranged in the first sub-direction D21 may be substantially the same as each other; for example, the second interval d2 between adjacent heat-conducting sub-components 10 in each column of heat-conducting sub-components arranged in the second sub-direction D22 may be substantially the same as each other. In some embodiments, the first interval d1 and the second interval d2 may also be substantially the same as each other.

[0097] The filling connection structure 103 fills the space in the main body region R1 that is not occupied by the plurality of heat-conducting sub-components 10, fills the gaps between the plurality of heat-conducting sub-components 10 and the gaps between the heat-conducting sub-components 10 and the edge seal 105; in this example, each heat-conducting sub-component 10 is surrounded by the filling connection structure 103.

[0098] In some embodiments, a plurality of heat-conducting sub-components and a filling connection structure are provided in the main body area. Arranging the plurality of heat-conducting sub-components with the same size and at equal intervals in the row and / or column directions facilitates the uniform distribution of the heat-conducting sub-components. This allows the plurality of heat-conducting sub-components to provide a uniform heat conduction channel between the heat-generating device and the heat-dissipating component, and also allows the heat-generating device to be subjected to uniform force. It should be understood that the shape and number of heat-conducting sub-components shown in the figures are illustrative examples and are not intended to limit the scope of this disclosure.

[0099] refer to Figure 2A , Figure 3A and Figure 3BIn the filling connection structure 103, the elastic filling layer 101 and the connecting layer 102 overlap each other in the first direction D1, that is, the orthographic projections of the elastic filling layer 101 and the connecting layer 102 on the reference plane perpendicular to the first direction overlap each other. In some examples, when no additional plating is provided at the end of the heat-conducting element 100, the elastic filling layer 101 and the connecting layer 102 completely overlap, that is, their orthographic projections on the reference plane coincide with each other; in other examples, when a plating is provided at the end of the heat-conducting element 100, the dimension of the connecting layer 102 in the second direction may be slightly smaller than the dimension of the elastic filling layer 101 in the second direction. For example, the orthographic projection of the connecting layer 102 on the reference plane perpendicular to the first direction may be located within the orthographic projection of the elastic filling layer 101 on the reference plane.

[0100] Figure 4 and Figure 5 A schematic plan view of a thermal interface structure according to other embodiments of the present disclosure is shown, illustrating thermally conductive elements with other shapes. Figure 4 and Figure 5 The connecting layer of the filling connection structure is shown in the figure. It should be understood that the elastic filling layer and the connecting layer are located in similar positions in the plan view, and the plan view of the plane where the elastic filling layer is located is not specifically shown in these embodiments.

[0101] refer to Figure 2A and Figure 4 In some embodiments, the plurality of heat-conducting sub-components 10 of the heat-conducting component 100 may each be sheet-like; that is, from a plan view, the plurality of heat-conducting sub-components 10 appear as strips. For example... Figure 4 As shown, for example, a plurality of heat-conducting sub-components 10 may be arranged at intervals along a first sub-direction D21 of the second direction D2, and may extend substantially parallel to each other along a second sub-direction D22 of the second direction D2. The spacing between adjacent heat-conducting sub-components 10 in the first sub-direction D21 may be substantially equal to each other.

[0102] For example, multiple heat-conducting sub-components 10 may be alternately arranged with a filling connection structure 103 on a first sub-direction D21 of the second direction D2. The filling connection structure 103 fills the gaps between the multiple heat-conducting sub-components 10 and the gaps between the heat-conducting sub-components 10 and the edge seal 105. In some embodiments, the opposite ends of the heat-conducting sub-components 10 on the second sub-direction D22 may contact the edge seal 105; or, the opposite ends of the heat-conducting sub-components 10 on the second sub-direction D22 may not contact the edge seal 105, and the filling connection structure 103 may also be formed between the ends and the edge seal 105.

[0103] In this example, the filling connection structure 103 surrounding the heat conductor 100 may be the filling connection structure 103 surrounding the opposite sides of each heat conductor sub-component 10 in the heat conductor 100 in the first sub-direction D21; or it may also include the filling connection structure surrounding one or both sides of the heat conductor 100 in the second sub-direction D22.

[0104] refer to Figure 5 In other embodiments, the heat-conducting element 100 may have a grid-like structure, and the plurality of heat-conducting sub-elements 10 are multiple portions of the grid-like heat-conducting element extending in different directions and intersecting with each other. The gap regions of the heat-conducting element 100 are hollow areas defined by the intersection of the plurality of heat-conducting sub-elements 10. For example, the plurality of heat-conducting sub-elements 10 include a plurality of first heat-conducting sub-elements 10a and a plurality of second heat-conducting sub-elements 10b. The plurality of first heat-conducting sub-elements 10a are portions of the heat-conducting element 100 extending along a first sub-direction D21, and the plurality of second heat-conducting sub-elements 10b are portions of the heat-conducting element 100 extending along a second sub-direction D22. The plurality of first heat-conducting sub-elements 10a and the plurality of second heat-conducting sub-elements 10b intersect with each other and define a plurality of hollow areas, i.e., the gap regions of the heat-conducting element 100. In this example, the plurality of heat-conducting sub-elements are arranged at equal intervals, including a plurality of hollow areas having approximately the same size.

[0105] It should be understood that Figures 3A to 5 The shape of the heat-conducting element 100 and the arrangement of the plurality of heat-conducting sub-elements shown are for illustrative purposes only, and this disclosure is not limited thereto. In some embodiments, the equivalent thermal conductivity of the thermal interface structure can be adjusted by adjusting the amount of heat-conducting element filling the main body region.

[0106] In some embodiments, thermal interface structures can be applied in various suitable fields to be configured between heat-generating devices and heat-dissipating components, providing an efficient heat conduction path and improving the heat dissipation performance of the device. The following example illustrates the application of thermal interface structures in the semiconductor packaging field.

[0107] Figure 6 A schematic cross-sectional view of a packaging structure according to some embodiments of the present disclosure is shown, the packaging structure including Figure 1A The thermal interface structure is shown.

[0108] In some embodiments, the packaging structure includes a chip component, a heat dissipation component, and a thermal interface structure of any of the above embodiments. The chip component includes one or more chips and is a heat-generating device. The heat dissipation component is disposed on one side of the chip component in a first direction and is configured to dissipate heat from the chip component. The thermal interface structure is disposed between the chip component and the heat dissipation component in the first direction, connects the chip component and the heat dissipation component, and is configured to conduct heat generated by the chip component to the heat dissipation component.

[0109] In the packaging structure of this disclosure embodiment, the thermal interface structure can improve the efficient heat conduction channel between the chip component and the heat dissipation component, thereby improving the heat dissipation performance of the chip component and the packaging structure. Moreover, the thermal interface structure can form a flexible connection between the chip component and the heat dissipation component, thereby avoiding or reducing additional stress on the chip component.

[0110] In some embodiments, the first and second surfaces of the thermal contact surface of the thermal interface structure are welded to and in contact with the chip component and the heat dissipation component, respectively.

[0111] In some embodiments, at the thermal contact surface of the thermal interface structure, the connecting surface of the connecting layer is welded to the chip component and the heat dissipation component respectively, and the thermally conductive surface of the thermally conductive component contacts the chip component and the heat dissipation component respectively.

[0112] refer to Figure 6 For example, package structure 500 includes chip component 300, heat dissipation component 400, and thermal interface structure 200. Chip component 300 may include one or more chips and is a heat-generating device. Heat dissipation component 400 is disposed on one side of chip component 300 in a first direction D1 and configured to dissipate heat from chip component 300. Thermal interface structure 200 is disposed between chip component 300 and heat dissipation component 400 in the first direction D1, connecting (e.g., flexibly connecting) chip component 300 and heat dissipation component 400, and configured to conduct heat generated by chip component 300 to heat dissipation component 400. For example, thermal interface structure 200 is soldered to chip component 300 and heat dissipation component 400 respectively.

[0113] refer to Figure 1A and Figure 6 In some embodiments, the first surface S1 of the thermal contact surface TS of the thermal interface structure 200 is welded to and in contact with the chip component 300, and the second surface S2 is welded to and in contact with the heat dissipation component 400. For example, at the thermal contact surface TS of the thermal interface structure 200, the connecting surface of the connecting layer 102 is welded to the chip component 300 and the heat dissipation component 400 respectively, and the thermally conductive surface of the thermally conductive component 100 is in contact with the chip component 300 and the heat dissipation component 400 respectively.

[0114] For example, the thermal interface structure 200 is welded to the chip component 300 and the heat sink component 400 via the first connecting sublayer 102a and the second connecting sublayer 102b of the connecting layer 102, respectively, thereby ensuring effective connection between the thermal interface structure and the chip component and the heat sink component, and can help reduce contact thermal resistance. The thermally conductive surface of the thermally conductive component 100 contacts the chip component 300 and the heat sink component 400 (e.g., direct contact) to establish an efficient heat conduction channel between the chip component 300 and the heat sink component 400. Moreover, welding the thermal interface structure to the chip component and the heat sink component can also help reduce or almost eliminate the contact thermal resistance between it and the chip component and the heat sink component, thereby improving the heat dissipation capacity of the thermal interface structure.

[0115] In some embodiments, a chip plating layer is provided on the surface of the chip component near the heat dissipation component. The chip plating layer is welded to the connection layer of the thermal interface structure and is in contact with the heat-conducting component.

[0116] For example, a chip plating layer 301 is provided on the side of the chip component 300 near the heat dissipation component 400. The chip plating layer 301 is welded to the connection layer 102 of the thermal interface structure 200 and thus the chip component 300 and the thermal interface structure 200 are fixedly connected to each other. In some embodiments, the chip plating layer 301 is in direct contact with the heat-conducting element 100 of the thermal interface structure 200 to facilitate chip heat dissipation.

[0117] In some embodiments, the thermal interface structure's thermal conductive elements and filling connection structure are located in a space enclosed and sealed by edge seals, chip components, and heat dissipation components.

[0118] For example, the opposing surfaces of the edge seal 105 in the first direction D1 contact the chip component 300 and the heat dissipation component 400, respectively, so that the heat conduction component 100 and the filling connection structure 103 are located within the sealed space formed by the edge seal 105, the chip component 300 and the heat dissipation component 400.

[0119] In some embodiments, the edge seal 105 may be adhered to the chip component 300 and the heat dissipation component 400. For example, the edge seal 105 may be adhesive, and its two opposing surfaces in a first direction may be attached to the chip component 300 and the heat dissipation component 400, respectively. Alternatively, the edge seal 105 may also be attached to the chip component 300 and the heat dissipation component 400 via an adhesive layer.

[0120] In some embodiments, the chip component 300 may be or include one or more chips, or may be a chip package including one or more chips, and this disclosure does not limit the chip type of the chip component or the type of the chip package.

[0121] In some embodiments, one or more chips in a chip component may include chips of the same or different types, and the number and type of chips may be selected according to product requirements. For example, a chip component may include one or more of the following: system-on-chip (SoC), digital signal processor (DSP) chip, graphics processing unit (GPU), application-specific integrated circuit (ASIC) chip, high bandwidth memory (HBM) and other memory chips, central processing unit (CPU), tensor processing unit (TPU), neural network processing unit (NPU), deep learning processing unit (DPU), accelerated processing unit (APU), general-purpose computing on graphics processing unit (GPGPU), and chiplet. For example, a chip package may include flip chip package, chip on wafer on substrate (CoWoS) package, and other packages, and this disclosure is not limited thereto.

[0122] Figure 7 A schematic cross-sectional view of a packaging structure according to other embodiments of the present disclosure is shown, illustrating an example of a chip component being a chip package.

[0123] refer to Figure 7 In some embodiments, the chip component 300 includes one or more chips 30, an adapter board 40, and a packaging substrate 50. In some examples, the chip component 300 includes multiple chips 30, which may include logic chips such as SoCs and memory chips such as HBMs, but this disclosure is not limited thereto.

[0124] The adapter board 40 is located between the chip 30 and the packaging substrate 50 to provide interconnection between multiple chips 30 and electrical connection between the chip 30 and the packaging substrate 50. The adapter board 40 may be a silicon-based adapter board, such as including a semiconductor substrate, substrate vias, and interconnect structures. In other embodiments, the adapter board 40 may also be replaced by a redistribution structure, or a connection structure such as a redistribution structure with embedded bridging chips.

[0125] In some embodiments, multiple chips 30 may be electrically connected to an adapter plate 40 via multiple conductive bumps such as micro bumps. An underfill layer may be provided between the multiple chips 30 and the adapter plate 40 to surround and protect the multiple conductive bumps.

[0126] In some embodiments, the chip component 300 may further include an encapsulation layer 32 located on the side of the adapter plate 40 away from the packaging substrate 50 to encapsulate a plurality of chips 30. The encapsulation layer 32 may include a molding compound, such as an epoxy molding compound (EMC).

[0127] A conductive connector 41 is provided between the adapter plate 40 and the package substrate 50 to provide an electrical connection between the adapter plate 40 and the package substrate 50. For example, the conductive connector 41 may be or include a controlled collapsed chip connection (C4) bump. In some embodiments, the chip component 300 may also include an underfill layer 42 that fills the space between the adapter plate 40 and the package substrate 50 and surrounds the conductive connector 41.

[0128] In some embodiments, other electronic devices, such as an auxiliary device 36, may also be disposed on the packaging substrate 50. For example, the auxiliary device 36 may include passive devices such as capacitors. The auxiliary device 36 may be disposed on the side of the packaging substrate 50 closer to the chip 30 and / or on the side of the packaging substrate 50 farther from the chip 30.

[0129] In some embodiments, a reinforcing structure 37 is provided on the packaging substrate 50, and the reinforcing structure 37 and the chip 30 are disposed on the same side of the packaging substrate 50. For example, the reinforcing structure 37 is disposed on the edge of the packaging substrate 50 and can be attached to the packaging substrate 50 by an adhesive layer. The chip 30 and the adapter plate 40 may be located in a region surrounded by the reinforcing structure 37 in a direction parallel to the main surface of the packaging substrate. The reinforcing structure 37 can help control and reduce the warpage of the packaging substrate and the overall packaging structure.

[0130] The thermal interface structure 200 may be disposed at least on the side of the chip 30 away from the adapter plate, and located between the chip 30 and the heat sink 400. The connection layer of the thermal interface structure 200 is soldered to both the chip 30 and the heat sink 400 to fix them together. The thermally conductive elements of the thermal interface structure 200 are in direct contact with the chip 30 and the heat sink 400, thereby forming an efficient thermal conduction channel for chip heat dissipation.

[0131] In some embodiments, each chip 30 has a chip plating layer 301 located on the surface of the chip 30 away from the adapter plate 40, and the chip 30 is soldered to the connection layer of the thermal interface structure 200 through the chip plating layer 301. For example, the chip 30 includes a semiconductor substrate, a device layer, and an interconnect structure; the semiconductor substrate may be a silicon-containing substrate, the device layer is disposed on one side of the semiconductor substrate, and may include active devices and / or passive devices; the interconnect structure is disposed on the side of the device layer away from the substrate, and may provide interconnection between multiple devices in the device layer; the interconnect structure may also include conductive pads as external connection windows of the chip, for example, for electrical connection with the adapter plate 40. The side of the chip 30 with conductive pads may be referred to as the front side of the chip, and the side where the semiconductor substrate is located may be referred to as the back side of the chip.

[0132] In some embodiments, the chip 30 is flip-chip mounted on the adapter plate 40, with its back side facing the heat dissipation member 400. A chip plating layer 301 is disposed on the back side of the chip, for example, covering a semiconductor substrate.

[0133] In some embodiments, the thermal interface structure 200 covers the surface of the chip 30 away from the adapter plate, and may also cover the surface of the encapsulation layer 32 away from the adapter plate. The heat dissipation component 400 is attached to the chip component 300 through the thermal interface structure 200; for example, the heat dissipation component 400 may also overlap the reinforcing structure 37.

[0134] In some embodiments, the chip component 300 may include conductive terminals 52 disposed on the side of the package substrate 50 away from the adapter plate 40. For example, the chip component 300 may be further connected to other package components, such as a printed circuit board (not shown), via the conductive terminals 52. The conductive terminals 52 may be or include solder balls, such as a ball grid array (BGA).

[0135] In some embodiments, the soldering temperature of the connection layer of the thermal interface structure is configured to be lower than the reflow soldering temperature of the conductive terminals of the chip component, but higher than the operating temperature of the chip.

[0136] For example, the soldering temperature of the thermal interface structure 200 is lower than the reflow soldering temperature of the conductive terminals 52 of the chip component 300, but higher than the operating temperature of the chip 30. For example, the soldering temperature of the thermal interface structure 200 may include the soldering temperature between its connection layer and the chip plating layer 301 of the chip component 300, or the soldering temperature between the connection layer and the heat dissipation component 400. Alternatively, the soldering temperature of the thermal interface structure 200 may also include the soldering temperature between its connection layer and the thermally conductive element. In some embodiments, the soldering temperature of the thermal interface structure 200 may also be lower than the reflow soldering temperature of the conductive connector 41, and lower than the reflow soldering temperature of the conductive bumps between the chip 30 and the adapter plate 40.

[0137] The operating temperature of chip 30 can be the case temperature of chip 30 during operation, such as the temperature of the side of chip 30 closest to thermal interface structure 200. For example, the soldering temperature of thermal interface structure 200 can be higher than the highest temperature of the case temperature of chip 30 during long-term operation.

[0138] Soldering the thermal interface structure at a temperature lower than the reflow soldering temperature of the chip components avoids adverse effects on the conductive terminals and / or other conductive connections of the chip components due to soldering of the thermal interface structure, ensuring the device reliability of these chip components. Soldering the thermal interface structure at a temperature higher than the chip's operating temperature ensures the connection effectiveness of the thermal interface structure during chip operation, avoiding adverse effects on the connection between the thermal interface structure and the chip components, the connection between the thermal interface structure and the heat dissipation components, and / or the connection between the internal connection layer of the thermal interface structure and the thermally conductive components due to the chip's operating temperature, thereby improving the effectiveness and reliability of the thermal interface structure and its connection with the chip components and heat dissipation components.

[0139] This disclosure provides a method for forming a thermal interface structure. The thermal interface structure has a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component. The thermal contact surface includes a first surface and a second surface opposite each other in a first direction. The forming method includes: forming a thermally conductive element, the thermally conductive element including a plurality of thermally conductive sub-components and a gap region defined by the plurality of thermally conductive sub-components; forming a filling connection structure located on the side of the thermally conductive element in a second direction parallel to the thermal contact surface, filling the gap region and connecting to the thermally conductive element, wherein the filling connection structure includes an elastic filling layer and a connecting layer located on opposite sides of the elastic filling layer in the first direction; and forming an edge seal to surround the thermally conductive element and the filling connection structure in a direction parallel to the thermal contact surface.

[0140] The method for forming the thermal interface structure according to the embodiments of this disclosure has the same technical effects as described above for the thermal interface structure. Moreover, the thermal interface structure according to the embodiments of this disclosure has a simpler structure, is easy to maintain, can be mass-produced, is easy to use on a large scale, and has high production efficiency.

[0141] In some embodiments, forming a filler connection structure includes: forming an elastic filler material layer to surround a heat-conducting element; removing a first end portion and a second end portion of the elastic filler material layer to expose a first heat-conducting end and a second heat-conducting end of the heat-conducting element, respectively; the remaining portion of the elastic filler material layer forming an elastic filler layer and surrounding a heat-conducting middle portion of the heat-conducting element; and forming a first connecting sublayer and a second connecting sublayer on opposite sides of the elastic filler layer to cover and connect to the first heat-conducting end and the second heat-conducting end of the heat-conducting element, respectively; the first connecting sublayer and the second connecting sublayer together constituting a connection layer.

[0142] refer to Figure 2A and Figure 2B For example, forming the filling connection structure 103 includes the following steps: First, forming an elastic filling material layer to surround the heat conductor 100. The thickness of the elastic filling material layer in the first direction is approximately equal to the thickness of the heat conductor 100 in the first direction, that is, the heat-conducting middle portion 100c, the first heat-conducting end portion 100a, and the second heat-conducting end portion 100b of the heat conductor 100 can all be covered by the elastic filling material layer. Next, the first and second end portions of the elastic filler material layer are removed to expose the first thermally conductive end 100a and the second thermally conductive end 100b of the heat conductor 100, respectively. The remaining portion of the elastic filler material layer forms an elastic filler layer 101 and surrounds the thermally conductive middle portion 100c of the heat conductor 100. Then, a first connecting sublayer 102a and a second connecting sublayer 102b are formed on opposite sides of the elastic filler layer 101 to cover and connect to the first thermally conductive end 100a and the second thermally conductive end 100b of the heat conductor 100, respectively. The first connecting sublayer 102a and the second connecting sublayer 102b together constitute the connecting layer 102.

[0143] In some embodiments, forming the thermal conductive element 100 and the elastic filler material layer may include alternatingly stacking a plurality of thermal conductive sub-elements 10 and elastic filler material layers in a second direction D2.

[0144] In some embodiments, before forming the bonding layer, the first and second thermally conductive ends of the thermally conductive element are surface-treated to facilitate subsequent bonding between the first and second thermally conductive ends and the bonding layer.

[0145] In some embodiments, the connection layer includes a solder layer, and the surface treatment includes forming a plating layer on the first thermally conductive end and the sidewall surface of the thermally conductive end by a plating process.

[0146] refer to Figure 2A and Figure 2CFor example, after forming the elastic filler layer 101 and exposing the first thermally conductive end 100a and the second thermally conductive end 100b of the thermally conductive element 100, the first thermally conductive end 100a and the second thermally conductive end 100b may be surface-treated to facilitate subsequent connection between the thermally conductive end and the connecting layer 102. For example, the connecting layer 102 may be or include a solder layer, and the surface treatment includes forming a plating layer 10p on the sidewall surfaces of the first thermally conductive end 100a and the second thermally conductive end 100b by a plating process.

[0147] In the thermal interface structure and its formation method, as well as the packaging structure including the present disclosure, the thermal interface structure has improved thermal conductivity and low contact thermal resistance between the thermal interface structure and the heat-generating device (e.g., chip component) and the heat dissipation component, thereby improving the heat dissipation performance of the chip component and the packaging structure. In some examples, the equivalent thermal conductivity of the thermal interface structure can reach 100 W / (m·K) or higher; for example, under the same thickness conditions, the equivalent thermal conductivity of the thermal interface structure of the present disclosure embodiments can even exceed the thermal conductivity of copper (approximately 400 W / (m·K)). For example, when the thermal interface structure of the present disclosure embodiments is located between the chip component and the heat dissipation component, the maximum junction temperature can be reduced by approximately 25°C to 30°C, and its heat dissipation performance under the same heat dissipation conditions can be improved by 50% or more compared to conventional thermal interface materials, thereby improving the device performance and reliability of the chip component and the packaging structure.

[0148] Furthermore, the thermal interface structure of this disclosure provides a flexible connection between the chip components and the heat dissipation components, which has good resilience. Therefore, it can absorb the deformation and stress that may be caused by chip warpage, avoiding or reducing additional stress on the chip. This significantly improves heat dissipation performance while enhancing the reliability of the chip components and packaging structure. The benefits of using the thermal interface structure of this disclosure are particularly significant for chips with larger sizes and higher power consumption.

[0149] The following points need to be explained:

[0150] (1) The accompanying drawings of the embodiments of this disclosure only involve the structures involved in the embodiments of this disclosure. Other structures can be referred to the general design.

[0151] (2) Where there is no conflict, features of the same embodiment and different embodiments of this disclosure can be combined with each other.

[0152] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A thermal interface structure, characterized in that, The thermal interface structure includes a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component, the thermal contact surface comprising a first surface and a second surface opposite each other in a first direction, and the thermal interface structure comprising: A heat-conducting component extends from the first surface to the second surface in the first direction and includes a plurality of heat-conducting sub-components and a gap region defined by the plurality of heat-conducting sub-components; A filling connection structure fills the gap area and connects to the heat-conducting component, wherein the filling connection structure includes an elastic filling layer and a connecting layer, the connecting layer being located on opposite sides of the elastic filling layer in a first direction, and both the elastic filling layer and the connecting layer being located on the side of the heat-conducting component in a second direction parallel to the thermal contact surface; and An edge seal surrounds the thermally conductive element and the filler connection structure in a direction parallel to the thermal contact surface. The thermal conductivity of the thermally conductive element is greater than that of the elastic filler layer, and the two opposing thermally conductive surfaces of the thermally conductive element in the first direction are exposed by the connecting layer.

2. The thermal interface structure according to claim 1, characterized in that, The first surface and the second surface of the thermal contact surface each include the thermally conductive surface of the thermally conductive element and the connecting surface of the connecting layer.

3. The thermal interface structure according to claim 2, characterized in that, The thermally conductive surface and the connecting surface are alternately arranged in the second direction.

4. The thermal interface structure according to claim 1, characterized in that, The heat-conducting component includes: The thermally conductive middle portion is surrounded by the elastic filler layer in the second direction, and the elastic filler layer adheres to the thermally conductive middle portion; and The first and second thermally conductive ends are located on opposite sides of the thermally conductive middle portion in the first direction, respectively extending beyond the opposite surface of the elastic filling layer in the first direction, and connected to the connecting layer.

5. The thermal interface structure according to claim 4, characterized in that, The connection layer includes: A first connecting sublayer is located on one side of the elastic filler layer in the first direction and surrounds and connects to the first thermally conductive end in the second direction; and The second connecting sublayer is located on the other side of the elastic filler layer in the first direction, and surrounds the second thermally conductive end in the second direction and is connected to the second thermally conductive end.

6. The thermal interface structure according to claim 5, characterized in that, It has at least one of the following characteristics: The surface of the first connecting sublayer and the surface of the first thermally conductive end are flush with each other in the second direction; and The surface of the second connecting sublayer and the surface of the second thermally conductive end are flush with each other in the second direction.

7. The thermal interface structure according to claim 4, characterized in that, The connecting layer includes a solder layer and is soldered to the first heat-conducting end and the second heat-conducting end.

8. The thermal interface structure according to claim 7, characterized in that, The first thermally conductive end and the second thermally conductive end each include a plating layer configured to be welded to the connecting layer.

9. The thermal interface structure according to claim 1, characterized in that, The thickness of the elastic filler layer in the first direction is greater than the thickness of the connecting layer in the first direction.

10. The thermal interface structure according to claim 1, characterized in that, The orthographic projection of the heat-conducting element and the filling connection structure onto a reference plane parallel to the first direction lies within the orthographic projection of the edge seal onto the reference plane, and the heat-conducting element and the filling connection structure are located in the area sealed by the edge seal in a direction parallel to the thermal contact surface.

11. The thermal interface structure according to claim 1, characterized in that, The plurality of heat-conducting sub-components are spaced apart from each other and arranged in an array in a direction parallel to the thermal contact surface. Each of the plurality of heat-conducting sub-components has a columnar structure and is surrounded and covered by the filling connection structure; or Each of the plurality of heat-conducting sub-components has a sheet-like structure, and the plurality of heat-conducting sub-components are arranged at intervals in the second direction, and are alternately arranged with the filling connection structure; or The heat-conducting component has a grid-like structure, and the plurality of heat-conducting sub-components each include multiple portions of the heat-conducting component that extend in different directions and intersect with each other, and the gap area includes a hollow area defined by the intersection of the plurality of heat-conducting sub-components.

12. The thermal interface structure according to any one of claims 1-11, characterized in that, The heat-conducting components of the heat-conducting element are arranged with adjacent heat-conducting sub-components at the same spacing.

13. The thermal interface structure according to any one of claims 1-11, characterized in that, The heat-conducting component is an elastic heat-conducting component, and the resilience of the elastic heat-conducting component is in the range of 50% to 100%.

14. The thermal interface structure according to any one of claims 1-11, characterized in that, The material orientation of the heat-conducting component is consistent with the heat conduction direction between the heat-generating device and the heat-dissipating component.

15. The thermal interface structure according to any one of claims 1-11, characterized in that, The material of the thermal conductive component includes at least one of carbon fiber and graphene.

16. The thermal interface structure according to any one of claims 1-11, characterized in that, The elastic filler layer comprises an insulating material with adhesive properties.

17. The thermal interface structure according to any one of claims 1-11, characterized in that, The resilience of the elastic filler layer ranges from 10% to 100%.

18. A packaging structure, characterized in that, include: A chip component, comprising one or more chips, wherein the chip component is the heating device; A heat dissipation component is disposed on one side of the chip component in the first direction and is configured to dissipate heat from the chip component. as well as The thermal interface structure as described in any one of claims 1-17 is disposed in the first direction between the chip component and the heat dissipation component, connecting the chip component and the heat dissipation component, and is configured to conduct heat generated by the chip component to the heat dissipation component.

19. The packaging structure according to claim 18, characterized in that, The first and second surfaces of the thermal interface structure are welded to and in contact with the chip component and the heat dissipation component, respectively.

20. The packaging structure according to claim 19, characterized in that, At the thermal contact surface of the thermal interface structure, the connecting surface of the connecting layer is welded to the chip component and the heat dissipation component respectively, and the thermally conductive surface of the thermally conductive component is in contact with the chip component and the heat dissipation component respectively.

21. The packaging structure according to claim 19, characterized in that, A chip plating layer is provided on the surface of the chip component near the heat dissipation component. The chip plating layer is welded to the connection layer of the thermal interface structure and is in contact with the heat-conducting component.

22. The packaging structure according to any one of claims 18-21, characterized in that, The welding temperature of the connecting layer of the thermal interface structure is configured to be lower than the reflow soldering temperature of the conductive terminals of the chip component, but higher than the operating temperature of the chip.

23. The packaging structure according to any one of claims 18-21, characterized in that, The thermally conductive component and the filling connection structure are located in a space enclosed and sealed by the edge seal, the chip component, and the heat dissipation component.

24. A method for forming a thermal interface structure, characterized in that, The thermal interface structure has a thermal contact surface configured to contact a heat-generating device and a heat-dissipating component, the thermal contact surface including a first surface and a second surface opposite each other in a first direction, and the forming method includes: A heat-conducting component is formed, the heat-conducting component extending from the first surface to the second surface in the first direction, and including a plurality of heat-conducting sub-components and a gap region defined by the plurality of heat-conducting sub-components; A filling connection structure is formed, which fills the gap area and connects to the heat-conducting component. The filling connection structure includes an elastic filling layer and a connecting layer. The connecting layer is located on opposite sides of the elastic filling layer in a first direction, and both the elastic filling layer and the connecting layer are located on the side of the heat-conducting component in a second direction parallel to the thermal contact surface. An edge seal is formed to surround the thermally conductive element and the filler connection structure in a direction parallel to the thermal contact surface. The thermal conductivity of the thermally conductive element is greater than that of the elastic filler layer, and the two opposing thermally conductive surfaces of the thermally conductive element in the first direction are exposed by the connecting layer.

25. The method for forming a thermal interface structure according to claim 24, characterized in that, Forming the filling connection structure includes: A layer of elastic filler material is formed to surround the heat-conducting component; Remove the first and second end portions of the elastic filler material layer to expose the first and second thermally conductive ends of the thermally conductive element, respectively. The remaining portion of the elastic filler material layer forms the elastic filler layer and surrounds the thermally conductive middle portion of the thermally conductive element; and A first connecting sublayer and a second connecting sublayer are formed on opposite sides of the elastic filler layer to cover and connect to the first heat-conducting end and the second heat-conducting end of the heat-conducting element, respectively. The first connecting sublayer and the second connecting sublayer together constitute the connecting layer.

26. The method for forming a thermal interface structure according to claim 25, characterized in that, Also includes: Before forming the connecting layer, the first and second thermally conductive ends of the thermally conductive element are surface treated to facilitate subsequent connection between the first and second thermally conductive ends and the connecting layer.

27. The method for forming a thermal interface structure according to claim 26, characterized in that, The connecting layer includes a solder layer, and the surface treatment includes forming a plating layer on the sidewall surface of the first heat-conducting end and the heat-conducting end through a plating process.

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