Two-phase liquid cooling heat dissipation device based on double-layer rectification structure and preparation method

Abstract

The invention discloses a two-phase liquid cooling heat dissipation device based on a double-layer rectification structure and a preparation method, and belongs to the field of semiconductor heat dissipation, and the two-phase liquid cooling heat dissipation device based on the double-layer rectification structure comprises a manifold layer of which two sides are respectively provided with an inlet groove and an outlet groove, a plurality of inlet manifolds and a plurality of outlet manifolds are arranged in the manifold layer in a staggered mode. The micro-channel layer is provided with a plurality of micro-channel units at intervals, the micro-channel layer is connected with the manifold layer, and each micro-channel unit comprises a plurality of micro-channel bodies which are sequentially communicated. The inlet manifold has the technical effects that by arranging the rectification structures on the manifold layer and the micro-channel layer respectively, countercurrent and swirling vortex in the inlet manifold can be restrained at the same time, reverse expansion of gas phases in the micro-channels is limited, and timely supplement of cooling working media is promoted, so that the heat dissipation capacity is improved; a flow self-balancing mechanism can be formed through the synergistic effect of the upper-layer rectification structure and the lower-layer rectification structure, the flow distribution uniformity and the two-phase heat exchange stability among multiple channels are improved, and the boiling heat exchange efficiency is further improved.

Description

Technical Field

[0001] This invention relates to semiconductor heat dissipation, and more particularly to a two-phase liquid cooling heat dissipation device and its preparation method based on a double-layer rectifier structure. Background Technology

[0002] Semiconductors are materials that enable logic operations, signal amplification, and energy conversion by precisely controlling their conductivity. They are the physical foundation of all modern electronic devices and computers.

[0003] In recent years, with the development of semiconductor devices towards higher integration, miniaturization, and higher power density, the heat flux density per unit area of ​​chips has continued to rise, placing higher demands on the heat exchange capacity and operational stability of heat dissipation devices. Microchannel two-phase flow boiling, due to its advantages such as large specific surface area and high heat dissipation capacity per unit area, is considered an effective technical approach to address the heat dissipation requirements of high heat flux density. However, traditional microchannel heat exchange structures still face several limiting factors under two-phase working fluid flow conditions.

[0004] Under two-phase liquid cooling conditions, the alternating impact of gas and liquid phases within the microchannel layer can easily create countercurrent or swirling vortices in the inlet manifold of the relevant heat dissipation device. This leads to unstable inlet flow of the relevant heat dissipation device, affecting the timely replenishment and uniform distribution of the cooling medium, and may even cause local flow interruption in the microchannel layer. At the same time, under two-phase liquid cooling conditions, the growth, merging, and separation processes of the gas phase within the microchannel layer can cause local pressure fluctuations, and dry areas can easily form when the liquid phase supply is insufficient. If the gas phase flows countercurrently into the inlet manifold of the relevant heat dissipation device in the microchannel layer, it will further reduce the continuity and uniformity of the liquid phase supply. Summary of the Invention

[0005] Purpose of the Invention: The purpose of this invention is to provide a two-phase liquid cooling heat dissipation device based on a double-layer rectification structure. By setting rectification structures in the manifold layer and the microchannel layer respectively, it can simultaneously suppress the backflow and swirling eddies in the inlet manifold, limit the reverse expansion of the gas phase in the microchannel, and promote the timely replenishment of the cooling working fluid, thereby improving the heat dissipation capacity. The synergistic effect of the upper and lower rectification structures can form a flow self-balancing mechanism, improve the flow distribution uniformity and two-phase heat transfer stability among multiple channels, and further enhance the boiling heat transfer efficiency. Another purpose of this invention is to provide a preparation method.

[0006] Technical solution: A two-phase liquid cooling heat dissipation device based on a dual-layer rectifier structure includes: A manifold layer with inlet and outlet slots on both sides, each manifold layer having several staggered inlet manifolds and several outlet manifolds, each inlet manifold and each outlet manifold being composed of an array of multiple Tesla rectifier structures to form a Tesla valve manifold structure with asymmetric flow resistance characteristics. The direction of communication from the inlet slot to the inlet manifold is configured as the positive direction of the Tesla valve manifold structure, and the direction of communication from the outlet manifold to the outlet slot is configured as the positive direction of the Tesla valve manifold structure. A microchannel layer is provided with a plurality of microchannel units at intervals. The microchannel layer is connected to the manifold layer. The microchannel units, the inlet manifold, and the outlet manifold are all out-of-plane and at a predetermined angle. Each microchannel unit includes a plurality of microchannel bodies connected in sequence. The flow resistance from the first end to the last end of each microchannel body is less than the flow resistance from the last end to the first end. The connection between the first ends of each microchannel body is connected to the inlet manifold, and the connection between the last ends of each microchannel body is connected to the outlet manifold.

[0007] Optionally, the microchannel body is a Tesla valve microchannel structure with a Tesla island, and the communication direction from the first end to the last end of the microchannel body is configured to be the positive direction of the Tesla valve microchannel structure with a Tesla island.

[0008] Optionally, the microchannel body is a Tesla valve microchannel structure without a Tesla island, and the communication direction from the first end to the last end of the microchannel body is configured to be the positive direction of the Tesla valve microchannel structure without a Tesla island.

[0009] Optionally, the adjacent microchannel bodies are distributed at an angle so that the microchannel units present a zigzag shape.

[0010] Optionally, the microchannel body includes a first main channel, and both sides of the first main channel are connected to a first serrated structure, which is arranged periodically.

[0011] Optionally, the microchannel body includes a second main channel, and both sides of the second main channel are connected to a second serrated structure, which is arranged in a staggered manner.

[0012] Optionally, it also includes an inlet diversion channel and an outlet confluence channel respectively disposed on both sides of the manifold layer, wherein the inlet diversion channel is connected between the inlet channel and a plurality of the inlet manifolds, and the outlet confluence channel is connected between the outlet manifold and the outlet channel.

[0013] A method for fabricating a two-phase liquid-cooled heat dissipation device based on a double-layer rectifier structure, comprising: Preparation of manifold layer; Preparation of microchannel layers; Connecting the manifold layer and the microchannel layer includes: first, organically cleaning the prepared manifold layer and microchannel layer, then rinsing with deionized water, and finally drying the residual solvent and moisture on a hot plate; placing the cleaned manifold layer and microchannel layer in an oxygen plasma treatment chamber for surface activation treatment; aligning and bonding the activated surfaces; and post-curing the bonded structure at 60–80℃ for 30–120 min.

[0014] Optionally, the manifold layer is prepared, including: A mold is made of acrylic material to form the corresponding manifold layer; The polydimethylsiloxane prepolymer and curing agent are mixed evenly at a mass ratio of 10:1, and then vacuumed and degassed in a vacuum degassing system to remove the mixed air bubbles and ensure the integrity of the manifold layer after molding. Pour the degassed polydimethylsiloxane mixture into a mold, vacuum it again to remove residual air bubbles, and then place it on a hot plate at 60-80℃ to heat and cure. After curing, demold, remove the manifold layer, and rinse and clean the surface as needed.

[0015] Optionally, the microchannel layer is prepared, including: A thin film of silicon dioxide is deposited on the surface of a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD) for insulation. An aluminum metal mask is prepared on the surface of a silicon wafer through photolithography, magnetron sputtering, and lift-off processes, and is used as a hard mask for subsequent microchannel unit etching. Dry etching technology is used to etch silicon wafers to form microchannel units; Remove the aluminum mask after etching is complete.

[0016] Beneficial effects: (1) Due to the extremely high resistance of the reverse flow along the Tesla valve manifold structure (i.e., along the direction from the inlet manifold to the inlet slot), under two-phase liquid cooling conditions, the gas phase generated by the microchannel layer is not easily reversed and expands into the inlet manifold and blocks it. This effectively suppresses the backflow and vortex at the inlet end, ensuring the continuous supply and uniform distribution of the cooling medium to the microchannel layer. At the same time, the directional flow resistance characteristics of the outlet manifold are conducive to the timely discharge of the gas phase at the outlet end, reducing the retention and accumulation of the gas phase in the outlet manifold, making the two-phase flow at the inlet and outlet ends more stable, thus forming the first-layer rectification mechanism.

[0017] (2) Due to the high resistance from the tail end to the head end of the microchannel body, even if there are local pressure fluctuations caused by gas phase growth, merging and separation within the microchannel layer during the two-phase boiling process, the high-resistance reverse path (tail end to head end) can still significantly inhibit the expansion of the gas phase towards the inlet manifold, preventing the gas phase from invading the inlet manifold in the reverse direction. This can maintain the unobstructed liquid phase supply path, improve the continuity and uniformity of liquid phase supply, inhibit the local drying of the microchannel layer, and form a second-layer rectification mechanism.

[0018] (3) In this embodiment, a two-phase liquid cooling heat dissipation device based on a double-layer rectification structure forms a passive regulation mechanism at the structural level through the double-layer rectification structure of the manifold layer and the microchannel layer. During the two-phase boiling process, the gas phase generated in the microchannel layer will expand to both the downstream and upstream sides simultaneously. When expanding downstream, the gas phase will occupy the cross-section of the microchannel layer, resulting in a reduction in the effective flow area, thereby increasing the local pressure drop in the downstream direction; when expanding upstream, the gas phase will collide with the upstream incoming liquid phase, forming a reverse expansion resistance.

[0019] In conventional microchannel structures, the upstream flow path is relatively unobstructed, resulting in limited resistance to the reverse expansion of the gas phase and a relatively weak contribution to the total pressure drop of the channel. However, in this embodiment, a rectifying structure such as a Tesla valve is arranged at the inlet of the microchannel layer, giving the upstream flow a significant unidirectional impedance characteristic. As the gas phase expands upstream, it not only needs to overcome the opposing resistance from the incoming liquid phase but also experiences additional flow obstruction from the rectifying structure, thus significantly suppressing its reverse expansion process.

[0020] The strong constraint imposed by the rectifying structure on the upstream expansion of the gas phase results in greater resistance on both sides of the gas phase expansion in the high dryness channel, further increasing the equivalent pressure drop in the high dryness channel. In contrast, the liquid phase dominates in the lower dryness channel, resulting in lower flow resistance. Therefore, the system can achieve passive self-balancing of flow rate based on the natural resistance difference between the two phases without any active control.

[0021] (4) Through the dual-layer rectification collaborative design of the manifold layer and the microchannel layer, the two-phase liquid cooling heat dissipation device based on the dual-layer rectification structure in this embodiment can effectively reduce the occurrence of air blockage and periodic flow oscillation, make the cooling working fluid flow more stable, the system temperature distribution more uniform, significantly reduce the local maximum temperature and thermal stress, and improve the reliability and life of semiconductors such as high heat flux density power devices or chip packages. Attached Figure Description

[0022] Figure 1 This is a structural diagram of a two-phase liquid cooling heat dissipation device based on a double-layer rectification structure according to Embodiment 1 of the present invention; Figure 2 This is one of the structural diagrams of the manifold layer in Embodiment 1 of the present invention; Figure 3 This is the second structural diagram of the manifold layer in Embodiment 1 of the present invention; Figure 4 This is an overall diagram of the microchannel layer in Embodiment 1 of the present invention; Figure 5 This is a partial view of the microchannel layer in Embodiment 1 of the present invention; Figure 6 This is a partial view of the microchannel layer in Embodiment 2 of the present invention; Figure 7 This is a partial view of the microchannel layer in Embodiment 3 of the present invention; Figure 8 This is a partial view of the microchannel layer in Embodiment 4 of the present invention; Figure 9 This is a partial view of the microchannel layer in Embodiment 5 of the present invention; Figure 10 This is a partial view of the microchannel layer in Embodiment 6 of the present invention; In the diagram: 1. Manifold layer; 111. Inlet channel; 112. Inlet branch channel; 113. Inlet manifold; 121. Outlet channel; 122. Outlet merge channel; 123. Outlet manifold; 2. Microchannel layer; 21. Microchannel unit; 211. Microchannel body; 2111. First main channel; 2112. First serrated structure; 2113. Second main channel; 2114. Second serrated structure. Detailed Implementation

[0023] To make the technical solution of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0024] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings. The terms "first," "second," etc., used in this invention are for the convenience of describing the technical solutions of the invention and have no specific limiting effect; they are all general terms and do not constitute a limitation on the technical solutions of the invention. It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of this application can be combined with each other. In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, not to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances. Multiple technical solutions in the same embodiment, as well as multiple technical solutions in different embodiments, can be arranged and combined to form new technical solutions that do not contradict or conflict, all of which are within the scope of protection claimed by this invention.

[0025] Example 1 like Figures 1-5This embodiment provides a two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure, including: a manifold layer 1 with an inlet groove 111 and an outlet groove 121 on both sides respectively; the manifold layer 1 has a plurality of inlet manifolds 113 and a plurality of outlet manifolds 123 arranged in an alternating manner; both the inlet manifolds 113 and the outlet manifolds 123 are composed of an array of multiple Tesla rectifier structures to form a Tesla valve manifold structure with asymmetric flow resistance characteristics; the connection direction from the inlet groove 111 to the inlet manifold 113 is configured as the positive direction of the Tesla valve manifold structure; the connection direction from the outlet manifold 123 to the outlet groove 121 is configured as the positive direction of the Tesla valve manifold structure. The structure is configured as a Tesla valve manifold. A microchannel layer 2 is provided with several microchannel units 21 at intervals. The microchannel layer 2 is connected to the manifold layer 1. The microchannel units 21, the inlet manifold 113, and the outlet manifold 123 are all out-of-plane and at a preset angle. The microchannel unit 21 includes a plurality of microchannel bodies 211 connected in sequence. The flow resistance from the first end to the last end of the microchannel body 211 is less than the flow resistance from the last end to the first end. The first end of the microchannel body 211 and the connection point of the first end are connected to the inlet manifold 113. The last end of the microchannel body 211 and the connection point of the last end are connected to the outlet manifold 123.

[0026] Specifically, during operation, the cooling medium first enters several inlet manifolds 113 from the inlet tank 111. Since the inlet manifold 113 is a Tesla valve manifold structure and the connection direction from the inlet tank 111 to the inlet manifold 113 is configured as the positive direction of the Tesla valve manifold structure, the cooling medium can move in the inlet manifold 113 with minimal resistance. At the same time, since the resistance of the reverse flow along the Tesla valve manifold structure (i.e., along the direction from the inlet manifold 113 to the inlet tank 111) is extremely large, and since the outlet manifold 123 is a Tesla valve manifold structure and the connection direction from the outlet manifold 123 to the outlet tank 121 is configured as the positive direction of the Tesla valve manifold structure, under two-phase liquid cooling conditions, the gas phase generated by the microchannel layer 2 is not easily reversed and expands into the inlet manifold 113 and blocks the inlet manifold 113, thereby effectively suppressing the backflow and vortex at the inlet end, ensuring the continuous supply and uniform distribution of the cooling medium to the microchannel layer 2. Meanwhile, the directional flow resistance characteristics of the outlet manifold 123 facilitate the timely discharge of the gas phase at the outlet end, reducing the retention and accumulation of the gas phase in the outlet manifold 123, making the two-phase flow at the inlet and outlet ends more stable, thus forming the first-layer rectification mechanism. Next, the cooling medium in the inlet manifold 113, driven by the subsequent cooling medium, enters the microchannel unit 21. Because the flow resistance from the beginning to the end of the microchannel body 211 is less than the flow resistance from the end to the beginning, the flow resistance of the microchannel body 211... The connection between the first and second ends is connected to the inlet manifold 113, facilitating the movement of the cooling medium along the microchannel body 211 from the first to the second end with minimal resistance. Due to the higher resistance along the microchannel body 211 from the second to the first end, even during two-phase boiling, local pressure fluctuations caused by gas phase growth, merging, and separation within the microchannel layer 2 can be significantly suppressed by the high-resistance reverse path (from the second to the first end) to prevent gas phase expansion towards the inlet manifold 113, thus preventing reverse gas phase intrusion into the inlet manifold 113. This maintains the unobstructed liquid phase supply path, improves the continuity and uniformity of liquid phase supply, suppresses local drying of the microchannel layer 2, and forms a second-layer rectification mechanism. Finally, the cooling medium within the microchannel body 211, propelled by subsequent cooling media, flows sequentially through the outlet manifold 123 and the outlet channel 121, and is discharged.

[0027] Furthermore, the two-phase liquid cooling heat dissipation device based on a double-layer rectification structure in this embodiment forms a passive regulation mechanism at the structural level through the double-layer rectification structure of manifold layer 1 and microchannel layer 2. During the two-phase boiling process, the gas phase generated in microchannel layer 2 expands simultaneously to both downstream and upstream sides. When expanding downstream, the gas phase occupies the cross-section of microchannel layer 2, resulting in a reduction in the effective flow area, thereby increasing the local pressure drop in the downstream direction; when expanding upstream, the gas phase opposes the upstream liquid phase, forming a reverse expansion resistance.

[0028] In conventional microchannel structures, the upstream flow path is relatively unobstructed, resulting in limited resistance to the reverse expansion of the gas phase and a relatively weak contribution to the total pressure drop of the channel. However, in this embodiment, a rectifier structure, such as a Tesla valve, is arranged at the inlet end of the microchannel layer 2, giving the upstream flow a significant unidirectional impedance characteristic. As the gas phase expands upstream, it not only needs to overcome the opposing resistance from the incoming liquid phase but also experiences additional flow obstruction from the rectifier structure, thus significantly suppressing its reverse expansion process.

[0029] The strong constraint imposed by the rectifying structure on the upstream expansion of the gas phase results in greater resistance on both sides of the gas phase expansion in the high dryness channel, further increasing the equivalent pressure drop in the high dryness channel. In contrast, the liquid phase dominates in the lower dryness channel, resulting in lower flow resistance. Therefore, the system can achieve passive self-balancing of flow rate based on the natural resistance difference between the two phases without any active control.

[0030] Meanwhile, through the dual-layer rectification collaborative design of manifold layer 1 and microchannel layer 2, the two-phase liquid cooling heat dissipation device based on the dual-layer rectification structure in this embodiment can effectively reduce the occurrence of air blockage and periodic flow oscillation, make the cooling working fluid flow more stable, the system temperature distribution more uniform, significantly reduce the local maximum temperature and thermal stress, and improve the reliability and life of semiconductors such as high heat flux density power devices or chip packages.

[0031] The cooling medium can be ethylene glycol, ethanol, methanol, or propanol, etc. Since the inlet manifolds 113 and outlet manifolds 123 are staggered, the flow uniformity of the cooling medium is good. The specific number of inlet manifolds 113 and outlet manifolds 123 is not limited; it can be four, five, etc., but the number of both is preferably equal. The specific number of microchannel units 21 and microchannel bodies 211 is not limited. The specific number of microchannel units 21 can be twenty, thirty, etc., and the specific number of microchannel bodies 211 can be seven, eight, etc. The microchannel units 21, inlet manifolds 113, and outlet manifolds 123 are all out-of-plane and at a predetermined angle, meaning they can be perpendicular to each other (e.g., ...). Figure 3 , Figure 5 , Figure 7 , Figure 9 and Figure 10 ), or they can be non-perpendicular (e.g. Figure 3 , Figure 6 and Figure 8 ).

[0032] Furthermore, such as Figure 5 The microchannel body 211 is a Tesla valve microchannel structure without a Tesla island, and the communication direction from the beginning to the end of the microchannel body 211 is configured as the positive direction of the Tesla valve microchannel structure without a Tesla island.

[0033] Specifically, compared to the Tesla valve microchannel structure with Tesla islands, the Tesla valve microchannel structure without Tesla islands results in a decrease in the rectification and flow suppression performance of the microchannel body 211, but the manufacturing cost and complexity are reduced.

[0034] Furthermore, such as Figures 2-3 It also includes an inlet diversion channel 112 and an outlet confluence channel 122 respectively located on both sides of the manifold layer 1. The inlet diversion channel 112 is connected between the inlet channel 111 and a number of inlet manifolds 113, and the outlet confluence channel 122 is connected between the outlet manifold 123 and the outlet channel 121.

[0035] Specifically, the inlet diversion channel 112 facilitates the uniform entry of the cooling medium from the inlet channel 111 into several inlet manifolds 113, and the shape of the inlet diversion channel 112 is preferably cuboid; the outlet confluence channel 122 facilitates the uniform entry of the cooling medium from several outlet manifolds 123 into the outlet channel 121, and the shape of the outlet confluence channel 122 is preferably cuboid.

[0036] This embodiment also provides a preparation method for preparing a two-phase liquid cooling heat dissipation device based on a double-layer rectification structure, comprising: preparing a manifold layer 1; preparing a microchannel layer 2; and connecting the manifold layer 1 and the microchannel layer 2, comprising: first performing organic cleaning (acetone, isopropanol, and ethanol are heated and cleaned sequentially for 5 min each), then rinsing with deionized water, and finally drying the residual solvent and moisture on a hot plate; placing the cleaned manifold layer 1 and microchannel layer 2 in an oxygen plasma treatment chamber for surface activation treatment; aligning and bonding the activated surfaces; and post-curing the bonded overall structure at 60–80℃ for 30–120 min.

[0037] Specifically, the order of preparation of manifold layer 1 and microchannel layer 2 is not restricted; manifold layer 1 can be prepared first, or microchannel layer 2 can be prepared first. During organic cleaning, the layers are first heated in acetone for 5 minutes. Acetone is a strong organic solvent that effectively dissolves most organic contaminants. Next, they are heated in isopropanol for 5 minutes. Isopropanol, as a "transition solvent," is well miscible with acetone and removes acetone residue. Finally, they are heated in ethanol for 5 minutes. Ethanol further removes isopropanol residue and water traces, and its low surface tension facilitates subsequent drying. Oxygen plasma bonding ensures good sealing between manifold layer 1 and microchannel layer 2. Post-curing promotes further bonding reactions on the surfaces of manifold layer 1 and microchannel layer 2, improving overall pressure resistance and resistance to liquid erosion. However, it is important to note that manifold layer 1, made of PDMS, should not be soaked in acetone for extended periods, as this can cause swelling.

[0038] Further, the preparation of manifold layer 1 includes: forming a mold corresponding to manifold layer 1 using acrylic material (PMMA); mixing polydimethylsiloxane (PDMS) prepolymer and curing agent uniformly at a mass ratio of 10:1, and performing vacuum degassing treatment in a vacuum degassing system to remove mixed air bubbles and ensure the integrity of manifold layer 1 after molding; pouring the degassed PDMS mixture into the mold, vacuuming again to remove residual air bubbles, and then placing it on a hot plate at 60-80℃ for heating and curing; after curing, demolding, removing manifold layer 1, and rinsing and cleaning the surface as needed.

[0039] Specifically, PDMS facilitates the formation and transparency of manifold layer 1, thus making it easier to observe the two-phase liquid cooling process; the curing agent needs to be selected that is compatible with the PDMS prepolymer phase.

[0040] Further, the microchannel layer 2 is prepared by: depositing a silicon dioxide thin film on the silicon wafer surface using plasma-enhanced chemical vapor deposition (PECVD) for insulation; preparing an aluminum metal mask on the silicon wafer surface using photolithography, magnetron sputtering, and lift-off processes to serve as a hard mask for subsequent etching of the microchannel unit 21; etching the silicon wafer using dry etching technology to form the microchannel unit 21; and removing the aluminum metal mask after etching is completed.

[0041] Example 2 like Figure 6 Compared with the technical solution of Embodiment 1, the microchannel body 211 of this embodiment can be improved as follows: The adjacent microchannel bodies 211 are inclined to each other so that the microchannel units 21 present a zigzag shape.

[0042] Specifically, when the distance between the two long ends of the microchannel unit 21 is fixed, since the microchannel unit 21 is in a zigzag shape, it is convenient for one microchannel unit 21 to contain more microchannel bodies 211. For example, a straight microchannel unit 21 can only contain seven microchannel bodies 211, while a zigzag microchannel unit 21 can contain twelve microchannel bodies 211. This increases the difference in flow resistance between the forward and reverse directions of the microchannel unit 21, while the forward direction still maintains a small equivalent flow resistance, ensuring good rectification performance. Meanwhile, the equivalent flow resistance in the reverse direction accumulates rapidly, which facilitates the effective improvement of flow suppression performance, thereby further ensuring good rectification performance.

[0043] Example 3 like Figure 7 Compared with the technical solution of Embodiment 1, the microchannel body 211 of this embodiment can be improved as follows: The microchannel body 211 is a Tesla valve microchannel structure with a Tesla island, and the communication direction from the first end to the last end of the microchannel body 211 is configured to be the positive direction of the Tesla valve microchannel structure with a Tesla island.

[0044] Specifically, the Tesla valve microchannel structure with Tesla island facilitates good reverse flow suppression performance of the microchannel body 211, thereby improving the overall rectification performance of the microchannel body 211.

[0045] Example 4 like Figure 8 Compared with the technical solution of Embodiment 3, the microchannel body 211 of this embodiment can be improved as follows: The adjacent microchannel bodies 211 are inclined to each other so that the microchannel units 21 present a zigzag shape.

[0046] Specifically, when the distance between the two long ends of the microchannel unit 21 is fixed, since the microchannel unit 21 is in a zigzag shape, it is convenient for one microchannel unit 21 to contain more microchannel bodies 211. For example, a straight microchannel unit 21 can only contain seven microchannel bodies 211, while a zigzag microchannel unit 21 can contain twelve microchannel bodies 211. This increases the difference in flow resistance between the forward and reverse directions of the microchannel unit 21, while the forward direction still maintains a small equivalent flow resistance, ensuring good rectification performance. Meanwhile, the equivalent flow resistance in the reverse direction accumulates rapidly, which facilitates the effective improvement of flow suppression performance, thereby further ensuring good rectification performance.

[0047] Example 5 like Figure 9 Compared with the technical solution of Embodiment 1, the microchannel body 211 of this embodiment can be improved as follows: The microchannel body 211 includes a first main channel 2111, and both sides of the first main channel 2111 are connected to a first serrated structure 2112, which is arranged periodically.

[0048] Specifically, the first sawtooth structure 2112 arranged in a periodic manner facilitates the microchannel body 211 to have certain flow suppression and rectification performance. The shape of the first sawtooth structure 2112 is preferably an isosceles right triangle, and one of its right-angled sides coincides with the first main channel 2111.

[0049] Example 6 like Figure 10 Compared with the technical solution of Embodiment 1, the microchannel body 211 of this embodiment can be improved as follows: The microchannel body 211 includes a second main channel 2113, and both sides of the second main channel 2113 are connected to a second serrated structure 2114, which are arranged in a staggered manner.

[0050] Specifically, the staggered arrangement of the second sawtooth structure 2114 facilitates the microchannel body 211 to have certain flow suppression and rectification performance, while also having good disturbance performance.

[0051] The above embodiments merely illustrate several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this patent should be determined by the appended claims.

Claims

1. A two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure, characterized in that, include: A manifold layer (1) is provided with an inlet slot (111) and an outlet slot (121) on both sides respectively. The manifold layer (1) has a plurality of inlet manifolds (113) and a plurality of outlet manifolds (123) arranged in an alternating manner. The inlet manifolds (113) and the outlet manifolds (123) are both composed of multiple Tesla rectifier structures arrayed to form a Tesla valve manifold structure with asymmetric flow resistance characteristics. The connection direction from the inlet slot (111) to the inlet manifold (113) is configured as the positive direction of the Tesla valve manifold structure, and the connection direction from the outlet manifold (123) to the outlet slot (121) is configured as the positive direction of the Tesla valve manifold structure. A microchannel layer (2) is provided with a plurality of microchannel units (21) at intervals. The microchannel layer (2) is connected to the manifold layer (1). The microchannel units (21), the inlet manifold (113), and the outlet manifold (123) are all out-of-plane and at a preset angle. The microchannel unit (21) includes a plurality of microchannel bodies (211) connected in sequence. The flow resistance from the first end to the last end of the microchannel body (211) is less than the flow resistance from the last end to the first end. The first end and the connection point of the first end of the microchannel body (211) are connected to the inlet manifold (113). The last end and the connection point of the last end of the microchannel body (211) are connected to the outlet manifold (123).

2. The two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 1, characterized in that, The microchannel body (211) is a Tesla valve microchannel structure with a Tesla island, and the communication direction from the first end to the last end of the microchannel body (211) is configured to be the positive direction of the Tesla valve microchannel structure with a Tesla island.

3. The two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 1, characterized in that, The microchannel body (211) is a Tesla valve microchannel structure without a Tesla island, and the communication direction from the first end to the last end of the microchannel body (211) is configured to be the positive direction of the Tesla valve microchannel structure without a Tesla island.

4. A two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 2 or 3, characterized in that, The adjacent microchannel bodies (211) are inclined to each other so that the microchannel units (21) present a zigzag shape.

5. A two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 1, characterized in that, The microchannel body (211) includes a first main channel (2111), and both sides of the first main channel (2111) are connected to a first serrated structure (2112), which is arranged periodically.

6. A two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 1, characterized in that, The microchannel body (211) includes a second main channel (2113), and both sides of the second main channel (2113) are connected to a second serrated structure (2114), which is arranged in a staggered manner.

7. A two-phase liquid cooling heat dissipation device based on a double-layer rectifier structure according to claim 1, characterized in that, It also includes an inlet diversion channel (112) and an outlet confluence channel (122) respectively disposed on both sides of the manifold layer (1). The inlet diversion channel (112) is connected between the inlet channel (111) and a plurality of the inlet manifolds (113), and the outlet confluence channel (122) is connected between the outlet manifold (123) and the outlet channel (121).

8. A preparation method for preparing a two-phase liquid-cooled heat dissipation device based on a double-layer rectifier structure as described in any one of claims 1-7, characterized in that, include: Preparation of manifold layer (1); Preparation of microchannel layer (2); Connecting the manifold layer (1) and the microchannel layer (2) includes: first cleaning the prepared manifold layer (1) and microchannel layer (2) with organic cleaner, then rinsing with deionized water, and finally drying the residual solvent and moisture on a hot plate; placing the cleaned manifold layer (1) and microchannel layer (2) in an oxygen plasma treatment chamber for surface activation treatment; aligning and bonding the activated surfaces; and post-curing the bonded structure at 60–80℃ for 30–120 min.

9. The preparation method according to claim 8, characterized in that, Preparation of the manifold layer (1) includes: A mold for forming the corresponding manifold layer (1) is made of acrylic material; The polydimethylsiloxane prepolymer and curing agent were mixed evenly at a mass ratio of 10:1, and vacuum degassing was performed in a vacuum degassing system to remove the mixed air bubbles and ensure that the manifold layer (1) was intact after molding. Pour the degassed polydimethylsiloxane mixture into a mold, vacuum it again to remove residual air bubbles, and then place it on a hot plate at 60-80℃ to heat and cure. After curing, demold and remove the manifold layer (1), and rinse and clean the surface as needed.

10. The preparation method according to claim 8, characterized in that, The preparation of the microchannel layer (2) includes: A thin film of silicon dioxide is deposited on the surface of a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD) for insulation. An aluminum metal mask is prepared on the surface of a silicon wafer by photolithography, magnetron sputtering and lift-off processes, and is used as a hard mask for subsequent etching of microchannel units (21); The silicon wafer was etched using dry etching technology to form microchannel units (21); Remove the aluminum mask after etching is complete.

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