Antimony chalcogenide distributed feedback laser and method of making same

Abstract

This invention provides a method for fabricating an antimonide distributed feedback laser, comprising the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming... S6. Forming a P-type InAlAsSb waveguide layer on the P-type InAlAsSb waveguide layer; S7. Forming a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S8. Forming a P-type etch barrier layer on the P-type second InAs buffer layer; S9. Forming a P-type grating layer on the P-type etch barrier layer; S10. Forming a P-type barrier layer on the P-type grating layer; S11. Forming a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method. This invention also provides an antimonide distributed feedback laser fabricated using this method.

Description

Technical Field

[0001] This invention belongs to the fields of optoelectronics and semiconductor technology, specifically relating to an antimony compound distributed feedback laser and its fabrication method. Background Technology

[0002] The 2–5 μm infrared band has two "atmospheric windows," namely the 2–2.5 μm band and the 3.5–5 μm band. Lasers operating in this band have low scattering and absorption, and are widely used in civilian and military fields such as medical devices, space optical communication, infrared optoelectronic countermeasures, and gas detection.

[0003] In the field of gas detection, many gas molecules have characteristic absorption spectral lines in this band. Utilizing the absorption characteristics of gas molecules in this band enables highly sensitive, rapid, and non-contact gas detection and atmospheric pollutant monitoring, which has significant industrial application value. Regarding the selection of working materials for semiconductor lasers in this band, antimony compounds have band gaps that precisely cover this band, making antimony compound lasers the most popular research subject in this area.

[0004] However, traditional infrared antimonybide semiconductor lasers suffer from low photoelectric conversion efficiency in practical applications, and also exhibit high threshold current, low maximum output power, and short continuous stable operating time at room temperature. Therefore, there is an urgent need to develop an infrared antimonybide semiconductor laser to address these technical problems. Summary of the Invention

[0005] To address the aforementioned technical problems in the prior art, embodiments of the present invention provide an antimonide distributed feedback laser with high photoelectric conversion efficiency, low device threshold current at room temperature, high maximum output power, and long continuous stable operating time, as well as a method for fabricating the same.

[0006] According to one aspect of the present invention, an antimonide distributed feedback laser and its fabrication method include the following steps: S1, forming an N-type first InAs buffer layer on a substrate; S2, forming an N-type lower InAsSb confinement layer on the N-type first InAs buffer layer; S3, forming an N-type lower InAlAsSb waveguide layer on the N-type lower InAsSb confinement layer; S4, forming an InGaAs / InAlGaAsSb quantum well layer on the N-type lower InAlAsSb waveguide layer; S5, forming an InGaAs / InAlGaAsSb quantum well layer on the InGaAs / InAlGaAsSb quantum well layer. S6. Form a P-type InAlAsSb waveguide layer; S7. Form a P-type InAsSb confinement layer on the P-type InAlAsSb waveguide layer; S8. Form a P-type second InAs buffer layer on the P-type InAsSb confinement layer; S9. Form a P-type etch barrier layer on the P-type second InAs buffer layer; S10. Form a P-type grating layer on the P-type etch barrier layer; S11. Form a P-type barrier layer on the P-type grating layer; S22. Form a P-type ohmic contact layer on the P-type barrier layer; wherein steps S1-S11 are performed using the MOCVD method.

[0007] In one example of the manufacturing method provided above, in step S2, the material of the N-type InAsSb confinement layer is specifically InAs. 1-y Sb y , where 0.9≤y≤0.97.

[0008] In one example of the fabrication method provided above, in step S3, the material of the N-type InAlAsSb waveguide layer is specifically In... x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.98.

[0009] In one example of the fabrication method provided above, in step S4, the InGaAs / InAlGaAsSb quantum well layer comprises multiple periods of In... x Ga 1-x As / In x Al y Ga 1-x-y As 1-z Sb z , among which, in In x Ga 1-x In As, 0.2 ≤ x ≤ 0.4; in In x Al y Ga 1-x-y As 1-z Sbz In the equation, 0.2≤x≤0.4, 0≤y≤0.5, and 0.74≤z≤0.98.

[0010] In one example of the fabrication method provided above, in step S5, the material of the P-type InAlAsSb waveguide layer is specifically In... x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.98.

[0011] In one example of the manufacturing method provided above, in step S6, the material of the InAsSb confinement layer on the P-type is specifically InAs. 1-y Sb y , where 0.9≤y≤0.97.

[0012] In one example of the manufacturing method provided above, in step S8, the specific material of the P-type corrosion barrier layer is InAs. 1-y Sb y , where y = 0.78.

[0013] In one example of the fabrication method provided above, in step S9, the specific material of the P-type grating layer is In. x Ga 1-x As 1-y Sb y , where x = 0.75, 0.95 ≤ y ≤ 0.98.

[0014] In one example of the fabrication method provided above, in step S10, the P-type barrier layer comprises P-type In layers sequentially stacked on the P-type grating layer. x Ga 1-x As 1-y Sb y Barrier gradient layer and P-type In x Ga 1-x As 1-y Sb y Barrier transition layer, wherein, in P-type In x Ga 1-x As 1-y Sb y In the barrier gradient layer, x = 0.75, y = 0.95; in the P-type In x Ga 1-x As 1-y Sb y In the barrier transition layer, x = 0.8 and y = 0.95.

[0015] The antimonide distributed feedback laser provided according to another aspect of the present invention is formed by the above-described fabrication method.

[0016] Beneficial effects: The infrared antimonybide semiconductor laser according to the embodiments of the present invention has high photoelectric conversion efficiency in practical applications, and at room temperature, the device threshold current is small, the maximum output power is high, and the continuous stable working time is long. Attached Figure Description

[0017] The above and other aspects, features, and advantages of embodiments of the present invention will become clearer from the following description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 This is a schematic diagram of the structure of an antimony compound distributed feedback laser according to an embodiment of the present invention;

[0019] Figure 2 The above is a performance test diagram of an antimony distributed feedback laser fabricated using the fabrication method of an antimony distributed feedback laser according to an embodiment of the present invention.

[0020] Figure 3 The graphs show the photoelectric conversion efficiency and output power of the antimony distributed feedback laser according to Embodiments 1 and 2 of the present invention as a function of current.

[0021] Figure 4 This is a lifetime curve diagram of an antimony compound distributed feedback laser according to Embodiments 1 and 2 of the present invention. Detailed Implementation

[0022] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention can be implemented in many different forms, and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the various embodiments of the invention and various modifications suitable for particular intended applications.

[0023] As used herein, the term "comprising" and its variations are open terms meaning "including but not limited to". The terms "based on", "according to", etc., mean "at least partially based on" or "at least partially based on". The terms "embodiment", "an example", "one embodiment", and "an embodiment" mean "at least one embodiment". The terms "another embodiment", "another embodiment", "another example", "yet another example" mean "at least one other embodiment". The terms "first", "second", etc., may refer to different or the same objects. Other definitions, whether explicit or implicit, may be included below. Unless explicitly indicated by the context, the definition of a term remains consistent throughout the specification.

[0024] It should also be noted that, in order to avoid obscuring the invention with unnecessary details, only the structures and / or processing steps closely related to the solution according to the invention are shown in the accompanying drawings, while other details that are not closely related are omitted.

[0025] Figure 1 This is a schematic diagram of an antimonyide distributed feedback laser according to an embodiment of the present invention. (Combined with...) Figure 1 A method for fabricating an antimonide distributed feedback laser according to an embodiment of the present invention will be described in detail.

[0026] Reference Figure 1 According to an embodiment of the present invention, the method for fabricating an antimony compound distributed feedback laser includes steps S1 to S11. In this embodiment, steps S1 to S11 are performed using MOCVD (metal-organic chemical vapor deposition). That is, steps S1 to S11 are performed using an MOCVD device.

[0027] Specifically, in step S1, an N-type first InAs buffer layer 110 is formed on the substrate 100. The substrate 100 is an InAs substrate, but this invention is not limited to this type.

[0028] The method for performing step S1 in the MOCVD equipment specifically includes: First, reducing the reaction chamber pressure of the MOCVD equipment to 50 mbar, continuously introducing arsine gas while raising the temperature to 300-380°C, and further raising the temperature to 400-600°C to perform deoxidation treatment on the surface of the substrate 100; Second, lowering the temperature to 450-500°C to grow the first InAs buffer layer 110 with a growth thickness of 200-400 nm and a growth rate of 0.5 nm / s; the Si doping concentration is 1E17-1E18.

[0029] In step S2, an N-type lower InAsSb confinement layer 120 is formed on the N-type first InAs buffer layer 110.

[0030] Specifically, in step S2, the N-type InAsSb confinement layer 120 is grown while maintaining the reaction chamber temperature, and the growth material is InAs. 1-y Sb y The growth thickness is 500-1500 nm, and the growth rate is 0.5 nm / s. The Sb composition y value is 0.9-0.97 (including endpoint values); the Si doping concentration is 1E17-1E18. It should also be noted that the endpoint values ​​mentioned below are all included within this range.

[0031] In step S3, an N-type lower InAlAsSb waveguide layer 130 is formed on the N-type lower InAsSb confinement layer 120.

[0032] Specifically, in step S3, an N-type InAlAsSb waveguide layer 130 is grown in the reaction chamber, and the growth material is In. x Al 1-x As 1-y Sb y The In component has an x ​​value of 0.7-0.85 and the Sb component has a y value of 0.96-0.98; the growth thickness is 400-600 nm.

[0033] In step S4, an InGaAs / InAlGaAsSb quantum well layer 140 is formed on the N-type InAlAsSb waveguide layer 130.

[0034] Specifically, in step S4, an InGaAs / InAlGaAsSb quantum well layer 140 is grown for 5-10 cycles at a reaction chamber temperature of 470-490℃, wherein the production material is In... x Ga 1-x As and In x Al y Ga 1-x-y As 1-z Sb z In x Ga 1-x In As, the In component has an x-value of 0.2-0.4 and a thickness of 100-200 nm; in In x Al y Ga 1-x-y As 1-z Sb z In the sample, the x-value of In is 0.2-0.4, the y-value of Al is 0-0.5, the Ga is 0.3-0.8, the z-value of Sb is 0.74-0.98, and the thickness is 150-300 nm.

[0035] In step S5, a P-type InAlAsSb waveguide layer 150 is formed on the InGaAs / InAlGaAsSb quantum well layer 140.

[0036] Specifically, in step S5, a P-type InAlAsSb waveguide layer 150 is grown at a constant temperature (relative to step S4), and the growth material is In. x Al 1-x As 1-y Sb y The In component has an x ​​value of 0.7-0.85 and the Sb component has a y value of 0.96-0.98; the growth thickness is 400-600 nm.

[0037] In step S6, a P-type InAsSb confinement layer 160 is formed on the P-type InAlAsSb waveguide layer 150.

[0038] Specifically, in step S6, a p-type InAsSb confinement layer 160 is grown at a temperature of 470-490°C, and the growth material is InAs. 1-y Sb y The Sb component y value is 0.9-0.97, and the growth thickness is 1200-1500 nm.

[0039] In step S7, a second InAs buffer layer 170 of type P is formed on the InAsSb confinement layer 160 of type P.

[0040] Specifically, in step S7, a P-type second InAs buffer layer 170 is grown at a temperature of 470-490℃, with InAs as the growth material, V / Ⅲ being 32, and a growth thickness of 500nm.

[0041] In step S8, a P-type corrosion barrier layer 180 is formed on the P-type second InAs buffer layer 170.

[0042] Specifically, in step S8, a P-type corrosion barrier layer 180 is grown at a temperature of 470-490℃, and the growth material is InAs. 1-y Sb y The Sb component has a y-value of 0.78 and a growth thickness of 800-100 nm.

[0043] In step S9, a P-type grating layer 190 is formed on the P-type etch barrier layer 180.

[0044] Specifically, step S9 includes: first, growing P-type In on the P-type corrosion barrier layer 180 at a temperature of 470-490℃. x Ga 1-x As 1-y Sb yA grating fabrication layer is formed, with an In composition x-value of 0.75 and an Sb composition y-value of 0.95-0.98, and a growth thickness of 1000-1200 nm. Next, an etching method is used to fabricate the P-type In layer. x Ga 1-x As 1-y Sb y The grating fabrication layer is etched to form a P-type grating layer 190 with the desired pattern. It should be noted that after the P-type In... x Ga 1-x As 1-y Sb y The grating fabrication layer is created by removing the epitaxial wafer from the reaction chamber and then performing an etching process.

[0045] In step S10, a P-type barrier layer 200 is formed on the P-type grating layer 190.

[0046] Specifically, step S10 includes: First, adjusting the reaction chamber pressure to 50 mbar, continuously introducing arsine gas when the temperature reaches 280°C, and raising the temperature to 470-490°C to grow a P-type InAs protective layer (not shown) on the P-type grating layer 190, such that the thickness of the P-type InAs protective layer covers the P-type grating layer 190; Second, sequentially growing P-type InAs from bottom to top on the P-type InAs protective layer. x Ga 1-x As 1-y Sb y A barrier gradient layer (with In composition x value of 0.75, Sb composition y value of 0.95, V / Ⅲ ratio of 3.8, and thickness of 500-1000 nm) and p-type In x Ga 1-x As 1-y Sb y Barrier transition layer (where In component x value is 0.8, Sb component y value is 0.95, V / Ⅲ is 3.6, and thickness is 50-100nm).

[0047] In step S11, a P-type ohmic contact layer 210 is formed on the P-type barrier layer 200.

[0048] Specifically, in step S11, the material InAs is used. 1-y Sb y A P-type ohmic contact layer 210 is grown and formed, wherein the Sb component y value is 0.88, V / Ⅲ is 1.9, and the thickness is 10-100 nm.

[0049] Hereinafter, the performance of an antimony distributed feedback laser fabricated using a preferred embodiment of the fabrication method of an antimony distributed feedback laser according to an embodiment of the present invention will be compared and explained with that of an antimony semiconductor laser fabricated using a conventional fabrication method.

[0050] An embodiment of the method for fabricating an antimony distributed feedback laser according to an embodiment of the present invention (hereinafter referred to as Embodiment 1) shows the following antimony distributed feedback laser fabricated:

[0051] First, when the reaction chamber pressure of the MOCVD equipment drops to 50 mbar and the temperature is raised to 330 degrees, arsine gas is continuously introduced, and the temperature is further raised to 590 degrees to perform deoxidation treatment on the surface of the InAs substrate 110.

[0052] Second, the reaction temperature is lowered to 480℃ to grow an N-type first InAs buffer layer 110 with a thickness of 200nm and a growth rate of 0.5nm / s; the Si doping concentration is 1E17-1E18.

[0053] Third, maintain the temperature to continue growing N-type InAs 0.04 Sb 0.96 The confinement layer is 120, with a growth thickness of 800 nm.

[0054] Fourth, growth of N-type In 0.8 Al 0.2 As 0.02 Sb 0.98 Waveguide layer, with a growth thickness of 400nm.

[0055] Fifth, In grown for 10 cycles at 480℃ 0.2 Ga 0.8 As / In x0.3 Al 0.2 Ga 0.5 As 0.2 Sb 0.8 The quantum well layer 140 has a thickness of 300 nm.

[0056] Sixth, growth of P-type In at constant temperature 0.8 Al 0.2 As 0.02 Sb 0.98 Waveguide layer 150, with a growth thickness of 400nm.

[0057] Seventh, growth of P-type InAs at 480℃ 0.04 Sb 0.96 The confinement layer is 160, and the growth thickness is 1300nm.

[0058] Eighth, a P-type second InAs buffer layer 170 was grown at a temperature of 480℃, wherein V / Ⅲ is 32, and the growth thickness is 500nm.

[0059] Ninth, growth of P-type InAs at 480℃ 0.22 Sb 0.78Corrosion barrier layer 180, growth thickness 900nm.

[0060] Tenth, growth of P-type In at 480℃ 0.75 Ga 0.25 As 0.05 Sb y0.95 The grating fabrication layer has a growth thickness of 1000 nm.

[0061] Eleventh, the reaction chamber is cooled to room temperature and the pressure is increased to atmospheric pressure, then the epitaxial wafer is removed.

[0062] Twelfth, use an etching method to apply a preset pattern to P-type In 0.75 Ga 0.25 As 0.05 Sb y0.95 The grating fabrication layer is etched to form P-type In. 0.75 Ga 0.25 As 0.05 Sb y0.95 190 grating layers.

[0063] Thirteenth, when the reaction chamber pressure is 50 mbar and the temperature reaches 280℃, arsine gas is continuously introduced. When the temperature rises to 480℃, a 500 nm thick P-type InAs protective layer is grown.

[0064] Fourteenth, 800 nm thick P-type InAs are grown sequentially from bottom to top on the P-type InAs protective layer. 0.75 Ga 0.25 As 0.05 Sb 0.95 A barrier gradient layer and a 50nm thick P-type In 0.8 Ga 0.2 As 0.05 Sb 0.95 A barrier transition layer is formed to create a P-type barrier layer 200.

[0065] Fifteenth, growing a P-type InA layer with a thickness of 80 nm on the P-type barrier layer 200. 0.12 Sb 0.88 Ohmic contact layer 210.

[0066] Sixteenth, cool the reaction chamber to room temperature, increase the pressure to atmospheric pressure, and remove the epitaxial wafer.

[0067] Another embodiment of the method for fabricating an antimony distributed feedback laser according to an embodiment of the present invention produces an antimony distributed feedback laser (hereinafter referred to as Embodiment Two) as follows:

[0068] First, when the pressure in the reaction chamber of the MOCVD equipment drops to 50 mbar and the temperature is raised to 330 degrees, arsenic is continuously introduced, and the temperature is further raised to 590 degrees to perform deoxidation treatment on the surface of the InAs substrate.

[0069] Second, the reaction chamber temperature was lowered to 480℃ to grow an InAs buffer layer with a thickness of 200nm and a growth rate of 0.5nm / s; the Si doping concentration was 1E17-1E18.

[0070] Third, maintain the temperature to continue growing N-type InAs 0.04 Sb 0.96 The lower confinement layer is grown to a thickness of 800 nm.

[0071] Fourth, growth of N-type In 0.8 Al 0.2 As 0.02 Sb 0.98 The lower waveguide layer is grown to a thickness of 400 nm.

[0072] Fifth, growth for 5 cycles at 480℃. 0.2 Ga 0.8 As / In x0.3 Al 0.2 Ga 0.5 As 0.2 Sb 0.8 The quantum well layer is 150 nm thick.

[0073] Sixth, P-type In grows at constant temperature 0.8 Al 0.2 As 0.02 Sb 0.98 The upper waveguide layer is grown to a thickness of 400 nm.

[0074] Seventh, growth of P-type InAs at 480℃ 0.04 Sb 0.96 The upper confinement layer is grown to a thickness of 1300 nm.

[0075] Eighth, a P-type InAs buffer layer was grown at a temperature of 480℃, with V / Ⅲ being 32 and a growth thickness of 500nm.

[0076] Ninth, growth of P-type InAs at 480℃ 0.22 Sb 0.78 Corrosion barrier layer, with a growth thickness of 900 nm.

[0077] Tenth, P-type In grown at 480℃ 0.75 Ga 0.25 As 0.05 Sb y0.95 The grating fabrication layer has a growth thickness of 1000 nm.

[0078] Eleventh, the reaction chamber is cooled to room temperature and the pressure is increased to atmospheric pressure, then the epitaxial wafer is removed.

[0079] Twelfth, the grating layer is fabricated using an etching method.

[0080] Thirteenth, when the reaction chamber pressure is 50 mbar and the temperature reaches 280℃, arsine gas is continuously introduced. When the temperature rises to 480℃, a 500 nm thick P-type InAs protective layer is grown.

[0081] Fourteenth, then, P-type InAs protective layers with a thickness of 800 nm are grown sequentially from bottom to top. 0.75 Ga 0.25 As 0.05 Sb 0.95 50nm thick P-type In 0.8 Ga 0.2 As 0.05 Sb 0.95 Barrier transition layer, and 80nm thick P-type InAs 0.12 Sb 0.88 Ohmic contact layer.

[0082] Fifteenth, the reaction chamber is cooled to room temperature and the pressure is increased to atmospheric pressure, then the epitaxial wafer is removed.

[0083] Figure 2 The diagram shows the performance test results of an antimony distributed feedback laser fabricated using the fabrication method of an antimony distributed feedback laser according to an embodiment of the present invention.

[0084] Reference Figure 2 Within a current range of 50mA to 90mA, the laser's main mode covers a wavelength range of approximately 2127nm to 2129nm, which is about 2nm of discontinuous tuning range. It has good wavelength stability and can be precisely aligned with the gas absorption peak by adjusting the temperature or current. It has a high side-mode rejection ratio (SMSR), which can effectively suppress side modes, avoid cross-interference from non-target gases, and improve the sensitivity of gas detection.

[0085] Figure 3 This is a graph showing the photoelectric conversion efficiency and output power of the antimony compound distributed feedback laser according to Embodiments 1 and 2 of the present invention as a function of current. Wherein, Figure 3 In the diagram, line A represents the photoelectric conversion efficiency curve, and line B represents the output power curve. Figure 4 This is a lifetime curve diagram of an antimony compound distributed feedback laser according to Embodiments 1 and 2 of the present invention. Wherein, Figure 4 In the figure, line C is the lifetime curve of Example 1, and line D is the lifetime curve of Example 2.

[0086] Reference Figure 3 Example 1 uses ten InGaAs / InAlGaAsSb quantum well layers, more than Example 2. By increasing the thickness of the quantum well layer, the optical confinement factor is increased, effectively reducing the threshold current. The threshold current at 20°C is 50mA, and the maximum output power is around 55mW. Furthermore, Example 1 achieves a photoelectric conversion efficiency of 40%, higher than the 32% of Example 2, thus improving laser performance. The device lifetime is also significantly extended, achieving continuous stable operation at room temperature for 8000 hours. Figure 4 (), which is much higher than in Example 2.

[0087] The terms “exemplary,” “example,” etc., used throughout this specification mean “serving as an example, instance, or illustration” and do not imply “preferred” or “advantageous” than other embodiments. Detailed descriptions are included for the purpose of providing an understanding of the described techniques. However, these techniques can be practiced without these detailed descriptions. In some instances, well-known structures and apparatuses are shown in block diagram form to avoid obscuring the concepts of the described embodiments.

[0088] The optional embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above embodiments. Within the scope of the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all fall within the protection scope of the embodiments of the present invention.

[0089] The foregoing description of this specification is provided to enable any person skilled in the art to implement or use the content of this specification. Various modifications to the content of this specification will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the scope of protection of this specification. Therefore, this specification is not limited to the examples and designs described herein, but is consistent with the widest scope of the principles and novel features disclosed herein.

Claims

1. A method for fabricating an antimony compound distributed feedback laser, characterized in that, The manufacturing method includes the following steps: S1. An N-type first InAs buffer layer is formed on the substrate; S2. An N-type lower InAsSb confinement layer is formed on the N-type first InAs buffer layer; S3. An N-type lower InAlAsSb waveguide layer is formed on the N-type lower InAsSb confinement layer; S4. An InGaAs / InAlGaAsSb quantum well layer is formed on the N-type InAlAsSb waveguide layer. S5. A P-type InAlAsSb waveguide layer is formed on the InGaAs / InAlGaAsSb quantum well layer. S6. A P-type InAsSb confinement layer is formed on the P-type InAlAsSb waveguide layer. S7. A second InAs buffer layer of type P is formed on the InAsSb confinement layer of type P; S8. A P-type corrosion barrier layer is formed on the P-type second InAs buffer layer; S9. A P-type grating layer is formed on the P-type corrosion barrier layer; S10. A P-type barrier layer is formed on the P-type grating layer; S11. A P-type ohmic contact layer is formed on the P-type barrier layer; Among them, steps S1-S11 are performed using the MOCVD method.

2. The manufacturing method according to claim 1, characterized in that, In step S2, the material of the N-type InAsSb confinement layer is specifically InAs. 1-y Sb y , where 0.9≤y≤0.

97.

3. The manufacturing method according to claim 1, characterized in that, In step S3, the material of the N-type InAlAsSb waveguide layer is specifically In. x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.

98.

4. The manufacturing method according to claim 1, characterized in that, In step S4, the InGaAs / InAlGaAsSb quantum well layer includes multiple periods of In x Ga 1-x As / In x Al y Ga 1-x-y As 1-z Sb z , among which, in In x Ga 1-x In As, 0.2 ≤ x ≤ 0.4; in In x Al y Ga 1-x-y As 1-z Sb z In the equation, 0.2≤x≤0.4, 0≤y≤0.5, and 0.74≤z≤0.

98.

5. The manufacturing method according to claim 1, characterized in that, In step S5, the material of the P-type InAlAsSb waveguide layer is specifically In. x Al 1-x As 1-y Sb y , where 0.7≤x≤0.85, 0.96≤y≤0.

98.

6. The manufacturing method according to claim 1, characterized in that, In step S6, the material of the InAsSb confinement layer on the P-type is specifically InAs. 1-y Sb y , where 0.9≤y≤0.

97.

7. The manufacturing method according to claim 1, characterized in that, In step S8, the specific material of the P-type corrosion barrier layer is InAs. 1-y Sb y , where y = 0.

78.

8. The manufacturing method according to claim 1, characterized in that, In step S9, the specific material of the P-type grating layer is In. x Ga 1-x As 1-y Sb y , where x = 0.75, 0.95 ≤ y ≤ 0.

98.

9. The manufacturing method according to claim 1, characterized in that, In step S10, the P-type barrier layer includes P-type In layers sequentially stacked on the P-type grating layer. x Ga 1-x As 1-y Sb y Barrier gradient layer and P-type In x Ga 1-x As 1-y Sb y Barrier transition layer, wherein, in P-type In x Ga 1-x As 1-y Sb y In the barrier gradient layer, x = 0.75, y = 0.95; in the P-type In x Ga 1-x As 1-y Sb y In the barrier transition layer, x = 0.8 and y = 0.

95.

10. An antimonide distributed feedback laser manufactured by the method described in any one of claims 1-9.

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