Light emitting diode

Abstract

The invention provides a light emitting diode. The light-emitting diode comprises an epitaxial structure and a current blocking structure, the current blocking structure is located on the epitaxial structure, the current blocking structure comprises a plurality of first current blocking structures and a plurality of second current blocking structures, and the plurality of first current blocking structures and the plurality of second current blocking structures are alternately connected and arranged; in the first direction, the maximum width of the projection of the first current blocking structure on the epitaxial structure is smaller than the maximum width of the projection of the second current blocking structure on the epitaxial structure; the first direction intersects with the second direction, and the second direction is the arrangement direction of the plurality of first current blocking structures and the plurality of second current blocking structures.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of light emitting devices, and in particular to a light emitting diode. BACKGROUND

[0002] A light emitting diode (LED) is a kind of semiconductor device capable of emitting light, which has the advantages of energy saving, high brightness, high durability, long service life and light weight, and has been widely used in the fields of lighting and display.

[0003] The related technology provides a light emitting diode, and the light emitting diode structure comprises an epitaxial structure, a current blocking structure, a transparent conductive layer, an electrode structure and a passivation layer, wherein the current blocking structure is located on the epitaxial structure, the transparent conductive layer is located on the epitaxial structure and covers the current blocking structure, the passivation layer covers the transparent conductive layer and the epitaxial structure, and the electrode structure is electrically connected with the transparent conductive layer and the epitaxial structure through the passivation layer.

[0004] The light emitting diode with the above structure cannot improve the anti-static breakdown capability of the light emitting diode while improving the light emitting efficiency and brightness of the light emitting diode. SUMMARY

[0005] The embodiment of the present disclosure provides a light emitting diode, which can improve the anti-static breakdown capability of the light emitting diode while improving the brightness of the light emitting diode. The technical scheme is as follows:

[0006] A light emitting diode is provided, comprising: an epitaxial structure and a current blocking structure;

[0007] The current blocking structure is located on the epitaxial structure, and the current blocking structure comprises a plurality of first current blocking structures and a plurality of second current blocking structures, and the plurality of first current blocking structures and the plurality of second current blocking structures are arranged alternately and connected alternately;

[0008] In a first direction, the maximum width of the projection of the first current blocking structure on the epitaxial structure is less than the maximum width of the projection of the second current blocking structure on the epitaxial structure;

[0009] The first direction intersects with a second direction, and the second direction is the arrangement direction of the plurality of first current blocking structures and the plurality of second current blocking structures.

[0010] Optionally, in the first direction, the maximum width W1 of the projection of the first current blocking structure on the epitaxial structure is 6-10 μm.

[0011] Optionally, a maximum width W2 of a projection of the second current blocking structure on the epitaxial structure in the first direction is 12 μm to 16 μm.

[0012] Optionally, the light emitting diode further comprises a first electrode, the first electrode comprising the electrode body and the finger electrode connected to the electrode body; the finger electrode comprising a plurality of first portions on the plurality of first current blocking structures and a plurality of second portions on the plurality of second current blocking structures; a maximum width of a projection of the first portion on the epitaxial structure in the first direction is less than a maximum width of a projection of the second portion on the epitaxial structure.

[0013] Optionally, the maximum width of the projection of the first portion on the epitaxial structure in the first direction is 1.5 μm to 2.5 μm.

[0014] Optionally, the maximum width of the projection of the second portion on the epitaxial structure in the first direction is 2.5 μm to 3.5 μm.

[0015] Optionally, the light emitting diode further comprises a passivation layer between the current blocking structure and the finger electrode, and the passivation layer comprises a via on the second current blocking structure.

[0016] Optionally, a projection of the via on the epitaxial structure is located within a projection of the second current blocking structure on the epitaxial structure.

[0017] Optionally, the projection of the via on the epitaxial structure is circular, rectangular or square.

[0018] Optionally, a diameter of the circular, a diagonal length of the rectangular or a diagonal length of the square is 10 μm to 15 μm.

[0019] The technical scheme provided by the embodiments of the present disclosure has the following beneficial effects:

[0020] The width of the current blocking structure under the electrode has a significant influence on the photoelectric performance of the light-emitting diode. When the width of the current blocking structure is smaller, the light-emitting diode has higher light-emitting efficiency and brightness and lower voltage, but at the same time, the anti-static breakdown capability of the light-emitting diode is poor. In the embodiment of the present disclosure, the current blocking structure is provided with a plurality of first current blocking structures and second current blocking structures connected alternately, the width of the first current blocking structure is smaller than the width of the second current blocking structure, the smaller width of the first current blocking structure can improve the light-emitting efficiency of the light-emitting diode, thereby improving the brightness of the light-emitting diode, and the larger width of the second current blocking structure has strong current blocking capability, which can improve the anti-static breakdown capability of the light-emitting diode. Compared with the traditional current blocking structure, the brightness of the light-emitting diode can be improved while the anti-static breakdown capability of the light-emitting diode is improved. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative labor.

[0022] Figure 1 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0023] Figure 2 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0024] Figure 3 is a top view of a light-emitting diode provided by an embodiment of the present disclosure;

[0025] Figure 4 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0026] Figure 5 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0027] Figure 6 is a top view of a light-emitting diode provided by an embodiment of the present disclosure;

[0028] Figure 7 is a flow chart of a light-emitting diode preparation method provided by an embodiment of the present disclosure;

[0029] Figure 8 is a flow chart of another light-emitting diode preparation method provided by an embodiment of the present disclosure;

[0030] Figure 9is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0031] Figure 10 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0032] Figure 11 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0033] Figure 12 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0034] Figure 13 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0035] Figure 14 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0036] Figure 15 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0037] Figure 16 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0038] Figure 17 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0039] Figure 18 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0040] Figure 19 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0041] Figure 20 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0042] Figure 21 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0043] Figure 22 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure;

[0044] Figure 23 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure.

[0045] The reference signs are as follows:

[0046] 10: epitaxial structure; 20: electrode structure; 30: groove;

[0047] 100: substrate; 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 104: current blocking structure; 105: transparent conductive layer; 106: first electrode; 107: second electrode; 108: passivation layer;

[0048] 1000: step structure; 1001: via hole; 1002: first via hole;

[0049] 1041: first current blocking structure; 1042: second current blocking structure;

[0050] 201: electrode body; 202: finger electrode;

[0051] 2001: first direction; 2002: second direction;

[0052] W1: maximum width of projection of the first current blocking structure on the epitaxial structure; W2: maximum width of projection of the second current blocking structure on the epitaxial structure. DETAILED DESCRIPTION

[0053] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in combination with the drawings.

[0054] Figure 1 is a structural schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 2 is a structural schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 1 and Figure 2 are different cross sections of the light-emitting diode. Referring to Figure 1 and Figure 2 , the light-emitting diode comprises an epitaxial structure 10 and a current blocking structure 104.

[0055] Figure 3 is a top view of a light-emitting diode provided by an embodiment of the present disclosure. Figure 1 is Figure 3 a cross section at A-A' in Figure 2 is Figure 3 a cross section at B-B' in Figures 1 to 3 , the current blocking structure 104 is located on the epitaxial structure 10, the current blocking structure 104 comprises a plurality of first current blocking structures 1041 and a plurality of second current blocking structures 1042, and the plurality of first current blocking structures 1041 and the plurality of second current blocking structures 1042 are arranged in an alternating connection.

[0056] In the first direction 2001, the maximum width of the projection of the first current blocking structure 1041 on the epitaxial structure 10 is less than the maximum width of the projection of the second current blocking structure 1042 on the epitaxial structure 10.

[0057] The first direction 2001 intersects with the second direction 2002, and the second direction 2002 is the arrangement direction of the plurality of first current blocking structures 1041 and the plurality of second current blocking structures 1042.

[0058] Since the width of the current blocking structure under the electrode has a significant impact on the photoelectric performance of the light-emitting diode, the smaller the width of the current blocking structure is, the higher the light-emitting efficiency and the brightness of the light-emitting diode are, and the lower the voltage is, but at the same time, the anti-static breakdown capability of the light-emitting diode will be poor. In the embodiment of the present disclosure, the current blocking structure is provided with a plurality of first current blocking structures and second current blocking structures connected alternately, the width of the first current blocking structure is smaller than the width of the second current blocking structure, wherein the smaller width of the first current blocking structure can improve the light-emitting efficiency of the light-emitting diode, thereby improving the brightness of the light-emitting diode; the larger width of the second current blocking structure has strong current blocking capability, which can improve the anti-static breakdown capability of the light-emitting diode. Compared with the traditional current blocking structure, the brightness of the light-emitting diode can be improved while the anti-static breakdown capability of the light-emitting diode is improved.

[0059] As shown in FIG. 1, the light-emitting diode further comprises a transparent conductive layer 105, an electrode structure 20, and a passivation layer 108. Figure 1 and 2 As shown in FIG. 1, the light-emitting diode further comprises a transparent conductive layer 105, an electrode structure 20, and a passivation layer 108.

[0060] The transparent conductive layer 105 is located on the epitaxial structure 10 and covers the current blocking structure 104, the passivation layer 108 covers the epitaxial structure 10 and the transparent conductive layer 105, the passivation layer 108 is located between the current blocking structure 104 and the finger electrode 202, and the passivation layer 108 comprises a through hole 1001 located on the second current blocking structure 1042.

[0061] The projection of the through hole 1001 on the epitaxial structure 10 is located within the projection of the second current blocking structure 1042 on the epitaxial structure 10.

[0062] The electrode structure 20 comprises an electrode body 201 and a finger electrode 202 connected with the electrode body 201, the projection of the finger electrode 202 on the plane of the epitaxial structure 10 is within the projections of the first current blocking structure 1041 and the second current blocking structure 1042 on the plane of the epitaxial structure 10, and the finger electrode 202 is electrically connected with the transparent conductive layer 105 through the through hole 1001.

[0063] In the implementation, the passivation layer is located between the current blocking structure and the finger electrode, and the passivation layer includes a through hole located on the second current blocking structure, which allows the finger electrode to pass through the passivation layer and be connected with the transparent conductive layer; the projection of the through hole on the epitaxial structure is located in the projection of the second current blocking structure on the epitaxial structure, which can prevent the area of the transparent conductive layer exposed to the outside from increasing, thereby reducing the risk of short circuit.

[0064] In the embodiments of the present disclosure, the electrode structure 20 includes a first electrode 106 and a second electrode 107.

[0065] The first electrode 106 includes an electrode body 201 and two finger electrodes 202 connected with the electrode body 201.

[0066] The two finger electrodes 202 are both arranged corresponding to the current blocking structure 104.

[0067] In the implementation, the electrode structure includes a first electrode, the first electrode includes an electrode body and two finger electrodes connected with the electrode body, and the two finger electrodes are both arranged corresponding to the current blocking structure, which can increase the coverage of the electrode on the epitaxial while making the current distribution more uniform through the two current blocking structures, thereby improving the brightness of the light-emitting diode.

[0068] In other embodiments, the first electrode 106 can also include other number of finger electrodes 202, for example, three finger electrodes connected with the electrode body 201.

[0069] In one example of the embodiments of the present disclosure, the width of the two finger electrodes 202 of the first electrode 106 can remain unchanged along the length direction.

[0070] In other examples of the embodiments of the present disclosure, the width of the two finger electrodes 202 of the first electrode 106 can change along the length direction.

[0071] Figure 4 FIG. 1 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 5 FIG. 1 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 6 FIG. 1 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 4 FIG. 1 is a structure schematic diagram of a light-emitting diode provided by an embodiment of the present disclosure. Figure 6 the cross section at A-A’ in FIG. 1, Figure 5 the cross section at A-A’ in FIG. 1, Figure 6 the cross section at B-B’ in FIG. 1, see Figures 4 to 6The first electrode 106 includes an electrode body 201 and a finger electrode 202 connected to the electrode body 201; the finger electrode 202 includes a plurality of first portions located on the plurality of first current blocking structures 1041, and a plurality of second portions located on the plurality of second current blocking structures 1042; in the first direction, the maximum width of the projection of the first portion on the epitaxial structure 10 is smaller than the maximum width of the projection of the second portion on the epitaxial structure 10.

[0072] In the implementation, in the first direction, the maximum width of the projection of the first portion on the epitaxial structure is smaller than the maximum width of the projection of the second portion on the epitaxial structure, wherein the portion corresponding to the first current blocking structure with a smaller width can improve the light-emitting efficiency of the light-emitting diode in cooperation with the first current blocking structure, thereby improving the brightness of the light-emitting diode; the portion corresponding to the second current blocking structure with a larger width can increase the blocking ability to the current in cooperation with the second current blocking structure, thereby improving the anti-static breakdown capability of the light-emitting diode.

[0073] In the implementation, the second portion with a larger width, together with the transparent conductive layer below and the current blocking structure with a larger width, forms a wide electrode finger & wide current blocking area, which is a synergistic voltage reduction and current diffusion unit with the passivation layer opening at the same frequency; the first portion with a smaller width above the current blocking structure with a smaller width and not in contact with the transparent conductive layer, together with the current blocking structure with a smaller width, the passivation layer, and the transparent conductive layer, forms a narrow electrode finger & narrow current blocking area, which is a synergistic high light unit without the passivation layer opening at the same frequency.

[0074] In the embodiment of the present disclosure, in the first direction 2001, the maximum width of the projection of the first portion on the epitaxial structure 10 can be 1.5 μm to 2.5 μm.

[0075] In the implementation, the maximum width of the projection of the first portion on the epitaxial structure is 1.5 μm to 2.5 μm, the current spreading area of the first portion at the first current blocking structure is large, and the voltage is small, which can improve the brightness of the light-emitting diode while spreading the current.

[0076] For example, in the first direction 2001, the maximum width of the projection of the first portion on the epitaxial structure 10 is 2 μm.

[0077] In the embodiment of the present disclosure, in the first direction 2001, the maximum width of the projection of the second portion on the epitaxial structure 10 can be 2.5 μm to 3.5 μm.

[0078] In the implementation, the maximum width of the second portion can be greater than the maximum width of the first portion, the current spreading area of the second portion at the second current blocking structure is small, and the voltage is large, which can improve the anti-static breakdown capability of the light-emitting diode.

[0079] Exemplarily, in the first direction 2001, the maximum width of the projection of the second portion on the epitaxial structure 10 can be 3 μm.

[0080] In the embodiment of the present disclosure, the second electrode 107 includes an electrode body 201 and one finger electrode 202 connected with the electrode body 201.

[0081] In other embodiments, the second electrode 107 can also include other number of finger electrodes 202, for example, two finger electrodes connected with the electrode body 201.

[0082] In the embodiment of the present disclosure, in the first direction 2001, the maximum width W1 of the projection of the first current blocking structure 1041 on the epitaxial structure 10 is 6 μm to 10 μm.

[0083] In this implementation, the maximum width W1 of the projection of the first current blocking structure 1041 on the epitaxial structure 10 is 6 μm to 10 μm, the current spreading area at the first current blocking structure is large, and the voltage is small, which can improve the brightness of the light emitting diode while spreading the current.

[0084] Exemplarily, the maximum width W1 of the projection of the first current blocking structure 1041 on the epitaxial structure 10 is 8 μm.

[0085] In the embodiment of the present disclosure, in the first direction 2001, the maximum width W2 of the projection of the second current blocking structure 1042 on the epitaxial structure 10 can be 12 μm to 16 μm.

[0086] In this implementation, the maximum width W2 of the projection of the second current blocking structure 1042 on the epitaxial structure 10 can be 12 μm to 16 μm, which can make the lower base width of the trapezoid corresponding to the second current blocking structure larger than the lower base width of the trapezoid corresponding to the first current blocking structure, the current spreading area at the second current blocking structure is small, and the voltage is large, which can improve the anti-static breakdown capability of the light emitting diode.

[0087] Exemplarily, in the first direction 2001, the maximum width W2 of the projection of the second current blocking structure 1042 on the epitaxial structure 10 is 14 μm.

[0088] In other embodiments, the cross section of the first current blocking structure 1041 and the second current blocking structure 1042 in the first direction perpendicular to the surface of the epitaxial structure 10 can also be other shapes, for example, a rectangle.

[0089] In the embodiment of the present disclosure, the epitaxial structure 10 includes a step structure 1000, and the epitaxial structure 10 and the passivation layer 108 have a plurality of grooves 30.

[0090] The electrode structure 20 comprises a second electrode 107.

[0091] The plurality of grooves 30 are arranged in a direction of the finger electrode 202 of the second electrode 107, the electrode body 201 of the second electrode 107 is located on the stepped structure 1000, the finger electrode 202 is located on the surface of the passivation layer 108, and the finger electrode 202 is connected to the epitaxial structure 10 through the plurality of grooves 30.

[0092] In the implementation, the epitaxial structure is provided with the stepped structure, and the epitaxial structure and the passivation layer are provided with the plurality of grooves. The stepped structure can connect the electrode body to the epitaxial structure. The grooves can connect the finger electrode to the epitaxial structure. The plurality of grooves arranged in the direction of the finger electrode can disperse the current and prevent the current from gathering. Compared with the strip-shaped groove arrangement in the related art, the area of the epitaxial structure can be increased without affecting the diffusion of the current, so that the effective light-emitting area of the light-emitting diode is increased, and the brightness of the light-emitting diode is further improved.

[0093] In the embodiment of the present disclosure, the width of the through hole 1001 is greater than the width of the finger electrode 202, and the width of the through hole 1001 is less than the width of the second current blocking structure 1042.

[0094] In the implementation, the width of the through hole is greater than the width of the finger electrode. Not only can the finger electrode pass through the passivation layer and be connected to the transparent conductive layer, but also the problem that the finger electrode is difficult to extend to the transparent conductive layer due to the blocking of the passivation layer during the manufacturing of the finger electrode can be avoided. The width of the through hole is less than the width of the second current blocking structure, so that the area of the transparent conductive layer exposed to the outside is prevented from being increased, and the risk of short circuit is reduced.

[0095] In the embodiment of the present disclosure, the projection of the groove 30 on the surface of the epitaxial structure 10 is a rounded rectangle.

[0096] In the embodiment of the present disclosure, the projection of the through hole 1001 on the epitaxial structure 10 is a circle, a rectangle or a square.

[0097] In the implementation, the projection of the through hole on the epitaxial structure is a circle, a rectangle or a square, so that the current is more uniformly expanded, and the manufacturing is more convenient.

[0098] In the embodiment of the present disclosure, the diameter of the circle, the diagonal length of the rectangle or the diagonal length of the square can be 10 μm to 15 μm.

[0099] In the implementation, the width of the through hole is not too small to cause the finger electrode to be difficult to extend to the transparent conductive layer due to the blocking of the passivation layer during the manufacturing of the finger electrode, and the finger electrode and the transparent conductive layer are not in good contact. The width of the through hole is also not too large to increase the area of the transparent conductive layer exposed to the outside, thereby reducing the risk of short circuit.

[0100] In the embodiment of the present disclosure, the grooves 30 are arranged in a row along the direction of one finger electrode 202 of the second electrode 107.

[0101] In the embodiment of the present disclosure, the through holes 1001 are arranged in a row along the direction of two finger electrodes 202 of the first electrode 106.

[0102] In the embodiment of the present disclosure, the size of the groove 30 is greater than that of the through hole 1001.

[0103] In the embodiment of the present disclosure, the connection between the two finger electrodes 202 of the first electrode 106 and the electrode body 201 and the end of the two finger electrodes 202 of the first electrode 106 away from the electrode body 201 are arc-shaped.

[0104] In the embodiment of the present disclosure, the through hole 1001 at the connection between the two finger electrodes 202 of the first electrode 106 and the electrode body 201 and the through hole 1001 at the end of the two finger electrodes 202 of the first electrode 106 away from the electrode body 201 are arc-shaped.

[0105] In the embodiment of the present disclosure, the side of the groove 30 corresponding to the end of the finger electrode 202 of the second electrode 107 away from the electrode body 201 is arc-shaped.

[0106] The passivation layer 108 at the electrode body 201 of the first electrode 106 and the electrode body 201 of the second electrode 107 is annular, and the transparent conductive layer 105 is provided with a first through hole 1002, so that the electrode body 201 of the first electrode 106 can be directly connected with the second semiconductor layer 103, the electrode body 201 of the second electrode 107 can be directly connected with the first semiconductor layer 101, and the two electrode bodies 201 are each covered with a small piece of passivation layer 108 as a blocking structure.

[0107] In the embodiment of the present disclosure, the epitaxial structure 10 includes a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103.

[0108] In the embodiment of the present disclosure, the first semiconductor layer 101 can be an N-type semiconductor layer, and the second semiconductor layer 103 can be a P-type semiconductor layer.

[0109] For example, the first semiconductor layer 101 can be an N-type GaN layer, and the second semiconductor layer 103 can be a P-type GaN layer.

[0110] In other embodiments, the first semiconductor layer 101 can be a P-type semiconductor layer, and the second semiconductor layer 103 can be an N-type semiconductor layer.

[0111] In embodiments of the present disclosure, the active layer 102 can be a multi-quantum well layer, for example, an InGaN / GaN multi-quantum well structure.

[0112] In embodiments of the present disclosure, the recess 30 and the step structure 1000 are opened to the first semiconductor layer 101.

[0113] In embodiments of the present disclosure, the sidewalls of the recess 30 and the step structure 1000 are covered with a passivation layer 108.

[0114] In embodiments of the present disclosure, the current blocking structure 104 can be a SiO2 layer.

[0115] In other embodiments, the current blocking structure 104 can also be other layers, for example, an Al2O3 layer.

[0116] In embodiments of the present disclosure, the transparent conductive layer 105 can be an Indium Tin Oxide (ITO) layer. ITO has good transparency and conductivity, and can conduct current to form an electrical connection while allowing light to pass through.

[0117] In embodiments of the present disclosure, the finger electrode 202 of the first electrode 106 is connected through the via 1001 and the transparent conductive layer 105, and the finger electrode 202 of the second electrode 107 is connected through the recess 30 and the first semiconductor layer 101.

[0118] In embodiments of the present disclosure, the first electrode 106 and the second electrode 107 can be one or more combinations of Cr, Al, AlCu, Ti, Ni, Pt, and Au, etc.

[0119] For example, the first electrode 106 and the second electrode 107 are a Cr / Al / AlCu / Ti / Ni / Pt / Au stack.

[0120] In embodiments of the present disclosure, the light emitting diode further comprises a substrate 100, and the epitaxial structure 10 is located on the substrate 100.

[0121] In embodiments of the present disclosure, the substrate 100 can be any one of a sapphire substrate, a Si substrate, and a SiC substrate, and the material of the substrate 100 is not limited in the embodiments of the present disclosure.

[0122] For example, the substrate 100 is a sapphire substrate.

[0123] It is worth mentioning that in the embodiments of the present disclosure, the structure of the light emitting diode can be selectively increased or reduced on the basis of the structure of the light emitting diode, and the present disclosure does not limit this.

[0124] Figure 7 is a flow chart of a light emitting diode preparation method provided by an embodiment of the present disclosure. Referring to Figure 7 , the method steps include:

[0125] S11, making an epitaxial structure.

[0126] S12, making a current blocking structure, the current blocking structure is located on the epitaxial structure, the current blocking structure includes a plurality of first current blocking structures and a plurality of second current blocking structures, the plurality of first current blocking structures and the plurality of second current blocking structures are arranged alternately connected, in a first direction, the maximum width of the projection of the first current blocking structure on the epitaxial structure is less than the maximum width of the projection of the second current blocking structure on the epitaxial structure, the first direction intersects with the second direction, and the second direction is the arrangement direction of the plurality of first current blocking structures and the plurality of second current blocking structures.

[0127] Since the width of the current blocking structure under the electrode has a significant impact on the photoelectric performance of the light emitting diode, when the width of the current blocking structure is smaller, the light emitting efficiency and brightness of the light emitting diode are higher, and the voltage is lower, but at the same time, the anti-static breakdown capability of the light emitting diode will be poor. In the embodiments of the present disclosure, the current blocking structure is provided with a plurality of first current blocking structures and second current blocking structures alternately connected, the width of the first current blocking structure is smaller than the width of the second current blocking structure, wherein the smaller width of the first current blocking structure can improve the light emitting efficiency of the light emitting diode, thereby improving the brightness of the light emitting diode; the second current blocking structure has a larger width and a stronger current blocking capability, which can improve the anti-static breakdown capability of the light emitting diode. Compared with the traditional current blocking structure, the brightness of the light emitting diode can be improved while the anti-static breakdown capability of the light emitting diode is improved.

[0128] Figure 8 is another flow chart of a light emitting diode preparation method provided by an embodiment of the present disclosure. Referring to Figure 8 , the method steps include:

[0129] S21, forming a first semiconductor layer, an active layer and a second semiconductor layer on a substrate in sequence, the second semiconductor layer, the active layer and the first semiconductor layer constitute an epitaxial structure.

[0130] Among them, the substrate can be any one of sapphire substrate, Si substrate and SiC substrate and other substrates.

[0131] Exemplarily, the substrate is a sapphire substrate.

[0132] In an example, step S21 comprises:

[0133] First, a first semiconductor layer is made.

[0134] In an embodiment of the present disclosure, the first semiconductor layer is an N-type GaN layer.

[0135] Second, an active layer is made.

[0136] In an embodiment of the present disclosure, the active layer is a multi-quantum well layer, for example, an InGaN / GaN multi-quantum well structure.

[0137] Third, a second semiconductor layer is made.

[0138] In an embodiment of the present disclosure, the second semiconductor layer is a P-type GaN layer.

[0139] In an embodiment of the present disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on the substrate.

[0140] In an embodiment of the present disclosure, the growth of the semiconductor layers can be achieved by using a Veeco K465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) device or an AIXTRON metal organic chemical vapor deposition device. High-purity H2 (hydrogen) or high-purity N2 (nitrogen) or a mixture of high-purity H2 and high-purity N2 is used as a carrier gas, high-purity NH3 is used as an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) are used as gallium sources, trimethyl indium (TMIn) is used as an indium source, silane (SiH4) is used as an N-type dopant, trimethyl aluminum (TMAl) is used as an aluminum source, and dimethyl magnesium (CP2Mg) is used as a P-type dopant.

[0141] Figure 9 is a structural schematic diagram of a light-emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 10 is a structural schematic diagram of a light-emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 11 is a top view of a light-emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 9 is Figure 11 is a cross section at A-A’. Figure 10 is Figure 11 is a cross section at B-B’. Referring to Figures 9 to 11 , the first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are sequentially stacked on the substrate 100.

[0142] S22, the epitaxial structure is subjected to a patterning process to form a step structure and a plurality of grooves.

[0143] Exemplarily, the step S22 can include:

[0144] Firstly, a layer of SiO2 is grown on the surface of the epitaxial layer by using a PECVD device, and the growth temperature is controlled to be 100-500 ℃.

[0145] Secondly, the SiO2 layer on the epitaxial layer in the part to be etched is removed by using a photoetching and a BOE etching solution, and the second semiconductor layer is exposed.

[0146] Thirdly, the second semiconductor layer, the active layer and the first semiconductor layer are etched in sequence from top to bottom by using an ICP etching, and a step structure and a plurality of grooves extending to the first semiconductor layer are formed.

[0147] Figure 12 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 13 is a structural schematic diagram of a light emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 14 is a top view of a light emitting diode manufacturing process provided by an embodiment of the present disclosure. Figure 12 is Figure 14 is a cross section at A-A'. Figure 13 is Figure 14 is a cross section at B-B'. Referring to Figures 12 to 14 , the epitaxial structure 10 includes a step structure 1000 and a plurality of grooves 30.

[0148] S23, manufacturing a current blocking structure.

[0149] Exemplarily, the step S23 can include:

[0150] Firstly, a current blocking film layer is deposited.

[0151] The current blocking film layer is deposited on the surface of the epitaxial structure by using a PECVD device under the condition that the temperature is 100-500 ℃.

[0152] Exemplarily, the current blocking film layer is deposited on the surface of the second semiconductor layer of the epitaxial structure by using a PECVD device under the condition that the temperature is 300 ℃.

[0153] Secondly, the current blocking film layer is patterned to form a first current blocking structure and a second current blocking structure.

[0154] In this embodiment of the present disclosure, the cross-sections of the first current blocking structure and the second current blocking structure perpendicular to the surface of the epitaxial structure in the first direction are trapezoidal. The width of the lower base of the trapezoid corresponding to the first current blocking structure is 6μm to 10μm, and the width of the lower base of the trapezoid corresponding to the second current blocking structure is 12μm to 16μm.

[0155] In this implementation, the width of the lower base of the trapezoid corresponding to the first current blocking structure is 6μm to 10μm, and the width of the lower base of the trapezoid corresponding to the second current blocking structure is 12μm to 16μm. This allows the width of the lower base of the trapezoid corresponding to the second current blocking structure to be greater than that of the trapezoid corresponding to the first current blocking structure. The first current blocking structure has a large current expansion area and a small voltage, which increases the brightness of the light-emitting diode while expanding the current. The second current blocking structure has a small current expansion area and a large voltage, which can improve the anti-static breakdown capability of the light-emitting diode.

[0156] For example, the bottom surface width of the trapezoid corresponding to the first current blocking structure is 8 μm, and the bottom surface width of the trapezoid corresponding to the second current blocking structure is 14 μm.

[0157] Figure 15 This is a schematic diagram of the fabrication process of a light-emitting diode provided in an embodiment of this disclosure. Figure 16 This is a schematic diagram of the fabrication process of a light-emitting diode provided in an embodiment of this disclosure. Figure 17 This is a top view of the manufacturing process of a light-emitting diode provided in an embodiment of this disclosure. Figure 15 for Figure 17 The cross section at A-A'. Figure 16 for Figure 17 The cross-section at B-B'. See also Figures 15 to 17 The current blocking structure 104 is located on the epitaxial structure 10. The current blocking structure 104 includes a plurality of first current blocking structures 1041 and a plurality of second current blocking structures 1042, which are alternately connected.

[0158] S24. Fabricate a transparent conductive layer.

[0159] For example, step S24 may include:

[0160] The first step is to deposit a transparent conductive film using reactive plasma deposition (RPD).

[0161] In the embodiments of the present disclosure, the transparent conductive film layer can be an Indium Tin Oxide (ITO) layer. The ITO has good transparency and conductivity, and it allows light to pass through while conducting current to form an electrical connection.

[0162] In the embodiments of the present disclosure, the transparent conductive film layer can be formed by an evaporation method.

[0163] In the embodiments of the present disclosure, the transparent conductive film layer can be formed by an evaporation method.

[0164] In the embodiments of the present disclosure, the transparent conductive layer is provided with a first through hole, so that the electrode body of the first electrode can be directly connected with the second semiconductor layer, and the electrode body of the second electrode can be directly connected with the first semiconductor layer.

[0165] In the embodiments of the present disclosure, the patterning of the transparent conductive film layer can include: spin coating photoresist; forming a mask pattern by exposure and development; and performing wet etching on the transparent conductive film layer under the shielding of the mask pattern.

[0166] In the embodiments of the present disclosure, the patterning of the transparent conductive film layer can include: spin coating photoresist; forming a mask pattern by exposure and development; and performing wet etching on the transparent conductive film layer under the shielding of the mask pattern.

[0167] Figure 18 is a structural schematic diagram of a light emitting diode manufacturing process provided by the embodiments of the present disclosure. Figure 19 is a structural schematic diagram of a light emitting diode manufacturing process provided by the embodiments of the present disclosure. Figure 20 is a top view of a light emitting diode manufacturing process provided by the embodiments of the present disclosure. Figure 18 is Figure 20 is a cross section at A-A'. Figure 19 is Figure 20 is a cross section at B-B'. Referring to Figures 18 to 20 , the transparent conductive layer 105 is located on the epitaxial structure 10 and covers the current blocking structure 104. The transparent conductive layer 105 has corresponding structures at the step structure 1000 and the plurality of grooves 30, and the transparent conductive layer 105 is provided with a first through hole 1002 at the subsequent electrode body.

[0168] As shown in Figure 18 , the shape of the first through hole 1002 can include a circular portion in the middle and two portions extending from the circular portion to the two current blocking structures 104 on both sides.

[0169] In other examples, the first through hole 1002 can also be a regular shape, for example, a circle.

[0170] S25, manufacturing a passivation layer.

[0171] In the embodiments of the present disclosure, the passivation layer can be a SiO2 layer.

[0172] In the embodiments of the present disclosure, the passivation layer is deposited by using a PECVD device.

[0173] S26, forming a via and a groove on the passivation layer.

[0174] In the embodiments of the present disclosure, the passivation layer is formed into a via and a groove by a wet etching or dry etching method.

[0175] Exemplarily, the passivation sub-layer is formed into a via and a groove by a BOE etching. The passivation layer groove and the epitaxial groove are communicated, thereby forming a groove connected to the first semiconductor layer. Meanwhile, the passivation layer covers the sidewall of the epitaxial groove, thereby avoiding contact with the active layer and the second semiconductor layer.

[0176] In the embodiments of the present disclosure, the passivation layer has a via corresponding to the second current blocking structure, the width of the via is greater than the width of the finger electrode, and the width of the via is less than the width of the second current blocking structure.

[0177] In this implementation, the width of the via is greater than the width of the finger electrode, which not only allows the finger electrode to pass through the passivation layer and be connected to the transparent conductive layer, but also avoids the problem that the finger electrode is difficult to extend to the transparent conductive layer due to the blockage of the passivation layer during the fabrication of the finger electrode, resulting in poor contact between the finger electrode and the transparent conductive layer; the width of the via is less than the width of the second current blocking structure, which can prevent the area of the transparent conductive layer exposed to the outside from increasing, thereby reducing the risk of short circuit.

[0178] Figure 21 FIG. 1 is a structural schematic diagram of a light emitting diode fabrication process provided by an embodiment of the present disclosure. Figure 22 FIG. 1 is a structural schematic diagram of a light emitting diode fabrication process provided by an embodiment of the present disclosure. Figure 23 FIG. 1 is a structural schematic diagram of a light emitting diode fabrication process provided by an embodiment of the present disclosure. Figure 21 FIG. 1 is a structural schematic diagram of a light emitting diode fabrication process provided by an embodiment of the present disclosure. Figure 23 A cross section at A-A’. Figure 22 FIG. 1 is a structural schematic diagram of a light emitting diode fabrication process provided by an embodiment of the present disclosure. Figure 23 A cross section at B-B’. Figures 21 to 23 The passivation layer 108 covers the epitaxial structure 10 and the transparent conductive layer 105, and the passivation layer 108 has a via 1001 corresponding to the second current blocking structure 1042.

[0179] S27, fabricating an electrode structure.

[0180] In the embodiments of the present disclosure, the electrode structure includes a first electrode and a second electrode.

[0181] The first electrode comprises an electrode body and two finger electrodes connected to the electrode body.

[0182] The two finger electrodes are each arranged with a current blocking structure.

[0183] In the implementation, the electrode structure comprises a first electrode, the first electrode comprises an electrode body and two finger electrodes connected to the electrode body, and the two finger electrodes are each arranged with a current blocking structure. The current blocking structure can make the current distribution more uniform while increasing the coverage of the electrode on the epitaxial layer, thereby improving the brightness of the light-emitting diode.

[0184] In an example, the width of the two finger electrodes of the first electrode can remain unchanged, as shown in the structure of Figures 1 to 3 .

[0185] In another example, the width of the two finger electrodes of the first electrode can change correspondingly with the width of the plurality of first current blocking structures and the plurality of second current blocking structures, as shown in the structure of Figures 4 to 6 .

[0186] In the implementation, the width of the two finger electrodes of the first electrode can change correspondingly with the width of the plurality of first current blocking structures and the plurality of second current blocking structures, wherein the part corresponding to the first current blocking structure with a smaller width can improve the light-emitting efficiency of the light-emitting diode in cooperation with the first current blocking structure, thereby improving the brightness of the light-emitting diode; and the part corresponding to the second current blocking structure with a larger width can increase the blocking ability of the current in cooperation with the second current blocking structure, thereby improving the anti-static breakdown capability of the light-emitting diode.

[0187] In other embodiments, the first electrode can further comprise other numbers of finger electrodes, for example, three finger electrodes connected to the electrode body.

[0188] In the embodiments of the present disclosure, the second electrode comprises an electrode body and one finger electrode connected to the electrode body.

[0189] In other embodiments, the second electrode can further comprise other numbers of finger electrodes, for example, two finger electrodes connected to the electrode body.

[0190] In the embodiments of the present disclosure, the first electrode and the second electrode can be made by a vapor deposition process.

[0191] In the embodiments of the present disclosure, the first electrode and the second electrode can be one or a combination of Cr, Al, AlCu, Ti, Ni, Pt and Au, etc.

[0192] For example, the first electrode and the second electrode are a Cr, Al, AlCu, Ti, Ni, Pt and Au stack.

[0193] In the embodiments of the present disclosure, step S27 can further include: after the annealing treatment of the electrode structure, grinding, polishing and cutting to obtain the light emitting diode chip.

[0194] Table 1 below is a comparison chart of luminance and forward voltage of the light emitting diode provided by the embodiments of the present disclosure and the light emitting diode provided by the related art.

[0195] The experimental data of the light emitting diode provided by the embodiments of the present disclosure in Table 1 below is Figures 3 to 6 The experimental data of the light emitting diode provided by the embodiments of the present disclosure in Table 1 below is

[0196] Wherein, Wld_Avg represents the average value of the main wavelength, in nm; Lop_Avg represents the average value of the luminance, in lm; ΔIv represents the luminance difference value, in percentage; Vf_Avg represents the average value of the forward voltage; ΔVf represents the voltage difference value, in percentage. The last digit after the decimal point of Lop and Vf is the estimated value.

[0197] As can be seen from Table 1, the luminance of the light emitting diode provided by the embodiments of the present disclosure is improved compared with the luminance of the light emitting diode provided by the related art, and the forward voltage of the light emitting diode provided by the embodiments of the present disclosure is reduced compared with the forward voltage of the light emitting diode provided by the related art. The light emitting diode provided by the embodiments of the present disclosure improves the anti-static breakdown capability while improving the light efficiency and luminance.

[0198] Table 1

[0199]

[0200]

[0201]

[0202]

[0203]

[0204]

[0205]

[0206] Table 2 below is a pass rate data table of the light emitting diode provided by the embodiments of the present disclosure and the light emitting diode provided by the related art under different electrostatic discharge voltages.

[0207] Wherein, Wld represents the main wavelength, in nm; Lop represents the luminance, in lm; ΔIv represents the luminance difference value, in percentage; Vf represents the forward voltage; ΔVf represents the voltage difference value, in percentage. The last digit after the decimal point of Lop and Vf is the estimated value.

[0208] As can be seen from Table 2, the pass rate of the light emitting diode provided by the embodiment of the present disclosure can reach 30% under the condition of a voltage of 3500V, while the pass rate of the light emitting diode provided by the related art is 0% under the condition of a voltage of 3500V.

[0209] Table 2

[0210]

[0211]

[0212] The above merely provides optional embodiments of the present disclosure but does not intend to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A light-emitting diode, characterized in that, The light-emitting diode includes: an epitaxial structure (10) and a current blocking structure (104); The current blocking structure (104) is located on the epitaxial structure (10). The current blocking structure (104) includes a plurality of first current blocking structures (1041) and a plurality of second current blocking structures (1042), and the plurality of first current blocking structures (1041) and the plurality of second current blocking structures (1042) are alternately connected and arranged. In the first direction (2001), the maximum width of the projection of the first current blocking structure (1041) onto the epitaxial structure (10) is smaller than the maximum width of the projection of the second current blocking structure (1042) onto the epitaxial structure (10). The first direction (2001) intersects with the second direction (2002), and the second direction (2002) is the arrangement direction of the plurality of first current blocking structures (1041) and the plurality of second current blocking structures (1042).

2. The light-emitting diode according to claim 1, characterized in that, In the first direction (2001), the maximum width W1 of the projection of the first current blocking structure (1041) onto the epitaxial structure (10) is 6μm to 10μm.

3. The light-emitting diode according to claim 1, characterized in that, In the first direction (2001), the maximum width W2 of the projection of the second current blocking structure (1042) onto the epitaxial structure (10) is 12μm to 16μm.

4. The light-emitting diode according to claim 1, characterized in that, The light-emitting diode further includes a first electrode (106), which includes the electrode body (201) and the finger electrode (202) connected to the electrode body (201); the finger electrode (202) includes a plurality of first portions located on the plurality of first current blocking structures (1041) and a plurality of second portions located on the plurality of second current blocking structures (1042); in the first direction, the maximum width of the projection of the first portion onto the epitaxial structure (10) is smaller than the maximum width of the projection of the second portion onto the epitaxial structure (10).

5. The light-emitting diode according to claim 4, characterized in that, In the first direction (2001), the maximum width of the projection of the first part onto the extensional structure (10) is 1.5 μm to 2.5 μm.

6. The light-emitting diode according to claim 4, characterized in that, In the first direction (2001), the maximum width of the projection of the second part onto the extensional structure (10) is 2.5 μm to 3.5 μm.

7. The light-emitting diode according to any one of claims 1 to 6, characterized in that, The light-emitting diode further includes a passivation layer (108) located between the current blocking structure (104) and the finger electrode (202), and the passivation layer (108) includes a via (1001) located on the second current blocking structure (1042).

8. The light-emitting diode according to claim 7, characterized in that, The projection of the through hole (1001) on the epitaxial structure (10) lies within the projection of the second current blocking structure (1042) on the epitaxial structure (10).

9. The light-emitting diode according to claim 7, characterized in that, The projection of the through hole (1001) onto the epitaxial structure (10) is a circle, a rectangle, or a square.

10. The light-emitting diode according to claim 9, characterized in that, The diameter of the circle, the diagonal length of the rectangle, or the diagonal length of the square is 10μm to 15μm.

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