Light emitting diode and light emitting diode preparation method
By introducing Si and Sb-doped AlInP/GaInP superlattice blocking layers into light-emitting diodes, the electrostatic discharge problem of small-sized AlGaInP light-emitting diodes is solved, improving the hot-cold ratio and luminous efficiency, and enhancing reliability.
Patent Information
- Application Number
- CN202511274020.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-08
- Publication Date
- 2026-02-03
AI Technical Summary
The insufficient electrostatic discharge performance of small-sized AlGaInP light-emitting diodes leads to a decrease in the chip's hot-cold ratio and an increase in heat generation, affecting reliability.
A barrier layer is introduced into the light-emitting diode. The barrier layer is an AlInP layer, a GaInP layer, or an AlInP/GaInP superlattice layer, doped with Si and Sb elements to improve the material's disorder and bandgap, block electron overflow, and prevent Mg diffusion.
It improves the heat dissipation ratio and luminous efficiency of light-emitting diodes, enhances their reliability, avoids electron overflow at high temperatures, and reduces heat generation.
Smart Images
Figure CN121463611A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and in particular to a light-emitting diode and a method for fabricating a light-emitting diode. Background Technology
[0002] In recent years, AlGaInP light-emitting diodes (LEDs), which have high brightness characteristics, have been increasingly widely used in the display field.
[0003] With the maturity and widespread adoption of mini display technology, prices have been declining. To maintain profitability, the size of AlGaInP LEDs used in mini display technology is becoming increasingly smaller. To improve the electrostatic discharge (ESD) performance of these smaller AlGaInP LEDs, the light-emitting layer is thinned. However, this thinning significantly reduces the thermal efficiency of the AlGaInP LED, while increasing the chip current density, leading to greater heat generation and compromising reliability. Therefore, improving the reliability of small-sized AlGaInP LEDs is a pressing issue that needs to be addressed. Summary of the Invention
[0004] This disclosure provides a light-emitting diode (LED) and a method for manufacturing an LED. The technical solution is as follows:
[0005] In a first aspect, embodiments of this disclosure provide a light-emitting diode, the light-emitting diode comprising an N-type AlInP confinement layer, an N-plane AlGaInP waveguide layer, a light-emitting layer, a P-plane AlGaInP waveguide layer, a blocking layer and a P-type AlInP confinement layer stacked sequentially;
[0006] The barrier layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer, and the barrier layer is doped with Si and Sb elements.
[0007] Optionally, the thickness of the barrier layer is 10 to 100 nm.
[0008] Optionally, the doping concentration of the barrier layer is 1E17 to 1E18 cm⁻¹. -3 .
[0009] Optionally, the light-emitting diode further includes:
[0010] The GaAs substrate, N-type GaAs buffer layer, N-type GaInP etch stop layer, N-type GaAs ohmic contact layer, N-type GaInP electrode adhesion layer and N-type AlGaInP current spreading layer are stacked sequentially.
[0011] The N-type AlInP confinement layer is located between the N-type AlGaInP current spreading layer and the N-plane AlGaInP waveguide layer.
[0012] Optionally, the light-emitting diode further includes:
[0013] A P-type AlGaInP transition layer and a P-type GaP current spreading layer are sequentially stacked on the P-type AlInP confinement layer.
[0014] Secondly, embodiments of this disclosure provide a method for fabricating a light-emitting diode (LED), the method comprising:
[0015] Fabrication of an N-type AlInP confinement layer;
[0016] An N-plane AlGaInP waveguide layer is fabricated on the N-type AlInP confinement layer;
[0017] A light-emitting layer is fabricated on the N-plane AlGaInP waveguide layer;
[0018] A P-plane AlGaInP waveguide layer is fabricated on the light-emitting layer;
[0019] A blocking layer is fabricated on the P-plane AlGaInP waveguide layer. The blocking layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The blocking layer is doped with Si and Sb elements.
[0020] A P-type AlInP confinement layer is fabricated on the barrier layer.
[0021] Optionally, the thickness of the barrier layer is 10 to 100 nm.
[0022] Optionally, the doping concentration of the barrier layer is 1E17 to 1E18 cm⁻¹. -3 .
[0023] Optionally, the method for fabricating the light-emitting diode further includes:
[0024] Fabrication of an N-type GaAs buffer layer on a GaAs substrate;
[0025] An N-type GaInP etch stop layer is fabricated on the N-type GaAs buffer layer;
[0026] An N-type GaAs ohmic contact layer is fabricated on the N-type GaInP etch stop layer;
[0027] An N-type GaInP electrode adhesion layer is fabricated on the N-type GaAs ohmic contact layer;
[0028] An N-type AlGaInP current spreading layer is fabricated on the N-type GaInP electrode adhesion layer, and the N-type AlInP confinement layer is located between the N-type AlGaInP current spreading layer and the N-plane AlGaInP waveguide layer.
[0029] Optionally, the method for fabricating the light-emitting diode further includes:
[0030] A P-type AlGaInP transition layer is fabricated on the P-type AlInP confinement layer;
[0031] A P-type GaP current spreading layer is fabricated on the P-type AlGaInP transition layer.
[0032] The beneficial effects of the technical solutions provided in this disclosure are:
[0033] In this embodiment, a barrier layer is formed after the light-emitting layer and the P-plane AlGaInP waveguide layer. This barrier layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The barrier layer is doped with Si and Sb elements. By doping with Sb, the disorder of the material in the barrier layer can be increased, thereby increasing the bandgap of the barrier layer material and improving its ability to block electrons. At the same time, by doping with Si, the barrier layer material forms an N-type dopant, thereby improving its ability to prevent Mg in the P-type AlInP material from diffusing into the light-emitting layer. That is, by doping AlInP, GaInP, and AlInP / GaInP materials with Si and Sb elements, the barrier layer's ability to block electrons and Mg is improved, avoiding the occurrence of carrier overflow at high temperatures, avoiding the problem of high heat generation caused by increased current density in the light-emitting diode, improving the cooling-heat ratio and luminous efficiency, and increasing the reliability of the light-emitting diode. Attached Figure Description
[0034] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure;
[0036] Figure 2 This is a schematic diagram of another light-emitting diode structure provided in an embodiment of this disclosure;
[0037] Figure 3 This is a flowchart of a method for fabricating a light-emitting diode provided in an embodiment of this disclosure;
[0038] Figure 4 This is a flowchart of another method for fabricating a light-emitting diode provided in this disclosure embodiment;
[0039] Figure 5 This is a schematic diagram comparing the hot and cold ratios of light-emitting diodes provided in this disclosure and those provided in related technologies;
[0040] Figure 6 This is a schematic diagram comparing the light intensity of a light-emitting diode provided in the embodiments of this disclosure and a light-emitting diode provided in related technologies.
[0041] The attached figures are labeled as follows:
[0042] 100: GaAs substrate;
[0043] 101: N-type AlInP confinement layer; 102: N-plane AlGaInP waveguide layer; 103: Emissive layer; 104: P-plane AlGaInP waveguide layer; 105: Blocking layer; 106: P-type AlInP confinement layer;
[0044] 107: N-type GaAs buffer layer; 108: N-type GaInP corrosion stop layer; 109: N-type GaAs ohmic contact layer; 110: N-type GaInP electrode adhesion layer; 111: N-type AlGaInP current spreading layer;
[0045] 112: P-type AlGaInP transition layer; 113: P-type GaP current spreading layer. Detailed Implementation
[0046] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0047] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting diode includes an N-type AlInP confinement layer 101, an N-plane AlGaInP waveguide layer 102, a light-emitting layer 103, a P-plane AlGaInP waveguide layer 104, a blocking layer 105, and a P-type AlInP confinement layer 106 stacked sequentially.
[0048] The barrier layer 105 is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer, and the barrier layer 105 is doped with Si and Sb elements.
[0049] In this embodiment, a barrier layer is formed after the light-emitting layer and the P-plane AlGaInP waveguide layer. This barrier layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The barrier layer is doped with Si and Sb elements. By doping with Sb, the disorder of the material in the barrier layer can be increased, thereby increasing the bandgap of the barrier layer material and improving its ability to block electrons. At the same time, by doping with Si, the barrier layer material forms an N-type dopant, thereby improving its ability to prevent Mg in the P-type AlInP material from diffusing into the light-emitting layer. That is, by doping AlInP, GaInP, and AlInP / GaInP materials with Si and Sb elements, the barrier layer's ability to block electrons and Mg is improved, avoiding the occurrence of carrier overflow at high temperatures, avoiding the problem of high heat generation caused by increased current density in the light-emitting diode, improving the cooling-heat ratio and luminous efficiency, and increasing the reliability of the light-emitting diode.
[0050] In this context, an N-plane AlGaInP waveguide layer refers to an AlGaInP waveguide layer located on the side of the light-emitting layer where an N-type doped material (N-type AlInP confinement layer) is disposed. A P-plane AlGaInP waveguide layer refers to an AlGaInP waveguide layer located on the side of the light-emitting layer where a P-type doped material (P-type AlInP confinement layer) is disposed.
[0051] In this embodiment of the disclosure, the thickness of the barrier layer 105 is 10 to 100 nm.
[0052] In this implementation, the aforementioned thickness is used to fabricate the barrier layer. This ensures the barrier layer's ability to block electrons and magnesium while miniaturizing the overall design of the LED. Specifically, a barrier layer thickness below 10nm is insufficient to block electrons; a thickness greater than 100nm excessively obstructs magnesium diffusion, leading to increased voltage and decreased luminous efficiency.
[0053] For example, the thickness of the barrier layer 105 is 50 nm.
[0054] In this embodiment of the disclosure, the doping concentration of the barrier layer 105 is 1E17 to 1E18 cm⁻¹. -3 .
[0055] In this implementation, the blocking layer is fabricated using the above doping concentration. On the one hand, this ensures the blocking ability of the blocking layer to block electrons and Mg. On the other hand, the doping concentration will not significantly affect the light-emitting recombination of the light-emitting diode, thus ensuring the light-emitting efficiency.
[0056] For example, the doping concentration of the barrier layer 105 is 5E17cm. -3 .
[0057] In this embodiment of the disclosure, the dopants used in the barrier layer 105 are TMSb and Si2H6.
[0058] The Si₂H₆ dopant is used at a concentration of 0.2–0.8 sccm, and the TMSb dopant is used at a concentration of 0.5–1 sccm. The Si₂H₆ dopant at these concentrations acts to block Mg diffusion, while the TMSb dopant at these concentrations alters the band gap and blocks electron interaction.
[0059] In this embodiment, the thickness of the N-type AlInP confinement layer 101 is 250–350 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–2E18 cm⁻¹. -3 .
[0060] For example, the thickness of the N-type AlInP confinement layer 101 is 300 nm, and the doping concentration is 1.5E18 cm⁻¹. -3 .
[0061] In this embodiment, the thickness of the N-plane AlGaInP waveguide layer 102 is 50–100 nm.
[0062] For example, the thickness of the N-plane AlGaInP waveguide layer 102 is 80 nm.
[0063] Among them, the N-plane AlGaInP waveguide layer 102 is an undoped layer.
[0064] In this embodiment of the disclosure, the light-emitting layer 103 is a multi-quantum well layer with a quantum well thickness of 2-6 nm and a quantum barrier thickness of 5-10 nm. The multi-quantum well layer includes a quantum well layer / quantum barrier structure with 5-20 cycles.
[0065] For example, the quantum well thickness of the multi-quantum well layer is 4 nm, the quantum barrier thickness is 8 nm, and the multi-quantum well layer includes a quantum well layer / quantum barrier structure with 10 cycles.
[0066] In this embodiment, the thickness of the P-plane AlGaInP waveguide layer 104 is 50–100 nm.
[0067] For example, the thickness of the P-plane AlGaInP waveguide layer 104 is 80 nm.
[0068] Among them, the P-plane AlGaInP waveguide layer 104 is an undoped layer.
[0069] In this embodiment, the thickness of the p-type AlInP confinement layer 106 is 300–800 nm, the dopant is Cp₂Mg, and the doping concentration is 3E¹⁷–1E¹⁸ cm⁻¹. -3 .
[0070] For example, the thickness of the p-type AlInP confinement layer 106 is 500 nm, and the doping concentration is 3E17 to 1E18 cm⁻¹. -3 .
[0071] Figure 2 This is a schematic diagram of another light-emitting diode provided in an embodiment of this disclosure. See also... Figure 2 The light-emitting diode also includes:
[0072] The GaAs substrate 100, the N-type GaAs buffer layer 107, the N-type GaInP etch stop layer 108, the N-type GaAs ohmic contact layer 109, the N-type GaInP electrode adhesion layer 110 and the N-type AlGaInP current spreading layer 111 are stacked sequentially.
[0073] The N-type AlInP confinement layer 101 is located between the N-type AlGaInP current spreading layer 111 and the N-plane AlGaInP waveguide layer 102.
[0074] In the embodiments disclosed herein, the barrier layer is made of materials such as AlInP, GaInP, and AlInP / GaInP, with a lattice constant matching the GaAs substrate, resulting in high crystal quality of the grown material.
[0075] In this embodiment, the thickness of the N-type GaAs buffer layer 107 is 150–300 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–2E18 cm⁻¹. -3 .
[0076] For example, the thickness of the N-type GaAs buffer layer 107 is 200 nm, and the doping concentration is 1.5E18 cm⁻¹. -3 .
[0077] In this embodiment, the thickness of the N-type GaInP etch stop layer 108 is 150–200 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–1E19 cm⁻¹. -3 .
[0078] For example, the thickness of the N-type GaInP etch stop layer 108 is 180 nm, and the doping concentration is 5E18 cm⁻¹. -3 .
[0079] In this embodiment, the thickness of the N-type GaAs ohmic contact layer 109 is 50–100 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 5E18–1E19 cm⁻¹. -3 .
[0080] For example, the thickness of the N-type GaAs ohmic contact layer 109 is 80 nm, and the doping concentration is 8E18 cm⁻¹. -3 .
[0081] In this embodiment, the thickness of the N-type GaInP electrode adhesion layer 110 is 10–20 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 5E18–1E19 cm⁻¹. -3 .
[0082] For example, the thickness of the N-type GaInP electrode adhesion layer 110 is 15 nm, and the doping concentration is 8E18 cm⁻¹. -3 .
[0083] In this embodiment, the thickness of the N-type AlGaInP current spreading layer 111 is 2–3 μm, the dopant is SiH4 / Si2H6, and the doping concentration is 7E17–2E18 cm⁻¹. -3 .
[0084] The N-type GaInP electrode adhesion layer is part of the epitaxial layer and its function is to prevent the electrode from being eroded (i.e., to prevent the GaAs ohmic contact layer material under the electrode from being corroded).
[0085] For example, the thickness of the N-type AlGaInP current-spreading layer 111 is 2.5 μm, and the doping concentration is 1E18 cm⁻¹. -3 .
[0086] See you again Figure 2 The light-emitting diode further includes:
[0087] A P-type AlGaInP transition layer 112 and a P-type GaP current spreading layer 113 are sequentially stacked on the P-type AlInP confinement layer 106.
[0088] In this embodiment, the thickness of the p-type AlGaInP transition layer 112 is 10–50 nm, the dopant is Cp₂Mg, and the doping concentration is 3E₁₈–1E₁₹ cm⁻¹. -3 .
[0089] For example, the thickness of the p-type AlGaInP transition layer 112 is 30 nm, and the doping concentration is 6E18 cm⁻¹. -3 .
[0090] Among them, the P-type AlGaInP transition layer plays a role in lattice transition and improves the quality of GaP crystal.
[0091] In this embodiment, the thickness of the p-type GaP current spreading layer 113 is 5–10 μm, the dopant is Cp₂Mg, and the doping concentration is 4E₁₷–3E₁₸ cm⁻¹. -3 .
[0092] For example, the thickness of the P-type GaP current spreading layer 113 is 8 μm, and the doping concentration is 1E18 cm⁻¹.-3 .
[0093] In addition, the light-emitting diode may also include an N-electrode and a P-electrode, wherein the N-electrode is electrically connected to an N-type doped semiconductor layer and the P-electrode is electrically connected to a P-type doped semiconductor layer.
[0094] It should be noted that the light-emitting diode may include components that are more advanced than those described above. Figure 1 or Figure 2 There is no limit to the number of membrane layers, whether more or fewer.
[0095] Figure 3 This is a flowchart illustrating a method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 3 The method includes:
[0096] 301. Create an N-type AlInP confinement layer.
[0097] 302. Fabricate an N-plane AlGaInP waveguide layer on the N-type AlInP confinement layer.
[0098] 303. Fabricate a light-emitting layer on the N-plane AlGaInP waveguide layer.
[0099] 304. Fabricate a P-plane AlGaInP waveguide layer on the light-emitting layer.
[0100] 305. A blocking layer is fabricated on the P-plane AlGaInP waveguide layer. The blocking layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The blocking layer is doped with Si and Sb elements.
[0101] 306. A P-type AlInP confinement layer is formed on the barrier layer.
[0102] In this embodiment, a barrier layer is formed after the light-emitting layer and the P-plane AlGaInP waveguide layer. This barrier layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The barrier layer is doped with Si and Sb elements. By doping with Sb, the disorder of the material in the barrier layer can be increased, thereby increasing the bandgap of the barrier layer material and improving its ability to block electrons. At the same time, by doping with Si, the barrier layer material forms an N-type dopant, thereby improving its ability to prevent Mg in the P-type AlInP material from diffusing into the light-emitting layer. That is, by doping AlInP, GaInP, and AlInP / GaInP materials with Si and Sb elements, the barrier layer's ability to block electrons and Mg is improved, avoiding the occurrence of carrier overflow at high temperatures, avoiding the problem of high heat generation caused by increased current density in the light-emitting diode, improving the cooling-heat ratio and luminous efficiency, and increasing the reliability of the light-emitting diode.
[0103] Figure 4 This is a flowchart of another method for fabricating a light-emitting diode provided in this disclosure. See also... Figure 4 The method includes:
[0104] 401. Fabricate an N-type GaAs buffer layer on a GaAs substrate.
[0105] In this embodiment, the thickness of the N-type GaAs buffer layer is 150–300 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–2E18 cm⁻¹. -3 .
[0106] For example, the thickness of the N-type GaAs buffer layer is 200 nm, and the doping concentration is 1.5E18 cm⁻¹. -3 .
[0107] 402. An N-type GaInP etch stop layer is fabricated on the N-type GaAs buffer layer.
[0108] In this embodiment, the thickness of the N-type GaInP etch stop layer is 150–200 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–1E19 cm⁻¹. -3 .
[0109] For example, the thickness of the N-type GaInP etch stop layer is 180 nm, and the doping concentration is 5E18 cm⁻¹. -3 .
[0110] 403. An N-type GaAs ohmic contact layer is fabricated on the N-type GaInP etch stop layer.
[0111] In this embodiment, the thickness of the N-type GaAs ohmic contact layer is 50–100 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 5E18–1E19 cm⁻¹. -3 .
[0112] For example, the thickness of the N-type GaAs ohmic contact layer is 80 nm, and the doping concentration is 8E18 cm⁻¹. -3 .
[0113] 404. An N-type GaInP electrode adhesion layer is fabricated on the N-type GaAs ohmic contact layer.
[0114] In this embodiment, the thickness of the N-type GaInP electrode adhesion layer is 10–20 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 5E18–1E19 cm⁻¹. -3 .
[0115] For example, the thickness of the N-type GaInP electrode adhesion layer is 15 nm, and the doping concentration is 8E18 cm⁻¹.-3 .
[0116] 405. An N-type AlGaInP current spreading layer is fabricated on the N-type GaInP electrode adhesion layer.
[0117] In this embodiment, the thickness of the N-type AlGaInP current spreading layer is 2–3 μm, the dopant is SiH4 / Si2H6, and the doping concentration is 7E17–2E18 cm⁻¹. -3 .
[0118] For example, the thickness of the N-type AlGaInP current-spreading layer is 2.5 μm, and the doping concentration is 1E18 cm⁻¹. -3 .
[0119] 406. An N-type AlInP confinement layer is fabricated on the N-type AlGaInP current spreading layer.
[0120] In this embodiment, the thickness of the N-type AlInP confinement layer is 250–350 nm, the dopant is SiH4 / Si2H6, and the doping concentration is 1E18–2E18 cm⁻¹. -3 .
[0121] For example, the thickness of the N-type AlInP confinement layer is 300 nm, and the doping concentration is 1.5E18 cm⁻¹. -3 .
[0122] 407. Fabricate an N-plane AlGaInP waveguide layer on the N-type AlInP confinement layer.
[0123] In this embodiment, the thickness of the N-plane AlGaInP waveguide layer is 50–100 nm.
[0124] For example, the thickness of the N-plane AlGaInP waveguide layer is 80 nm.
[0125] 408. Fabricate a light-emitting layer on the N-plane AlGaInP waveguide layer.
[0126] In this embodiment of the disclosure, the light-emitting layer is a multi-quantum well layer, the quantum well thickness of which is 2-6 nm and the quantum barrier thickness is 5-10 nm. The multi-quantum well layer includes a quantum well layer / quantum barrier structure with 5-20 cycles.
[0127] For example, the quantum well thickness of the multi-quantum well layer is 4 nm, the quantum barrier thickness is 8 nm, and the multi-quantum well layer includes a quantum well layer / quantum barrier structure with 10 cycles.
[0128] 409. Fabricate a P-plane AlGaInP waveguide layer on the light-emitting layer.
[0129] In this embodiment, the thickness of the P-plane AlGaInP waveguide layer is 50–100 nm.
[0130] For example, the thickness of the P-plane AlGaInP waveguide layer is 80 nm.
[0131] 410. A blocking layer is fabricated on the P-plane AlGaInP waveguide layer. The blocking layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The blocking layer is doped with Si and Sb elements.
[0132] In this embodiment of the disclosure, the thickness of the barrier layer is 10 to 100 nm.
[0133] In this implementation, the aforementioned thickness is used to fabricate the barrier layer. This ensures the barrier layer's ability to block electrons and magnesium while miniaturizing the overall design of the LED. Specifically, a barrier layer thickness below 10nm is insufficient to block electrons; a thickness greater than 100nm excessively obstructs magnesium diffusion, leading to increased voltage and decreased luminous efficiency.
[0134] For example, the thickness of the barrier layer is 50 nm.
[0135] In this embodiment of the disclosure, the doping concentration of the barrier layer is 1E17 to 1E18 cm⁻¹. -3 .
[0136] In this implementation, the blocking layer is fabricated using the above doping concentration. On the one hand, this ensures the blocking ability of the blocking layer to block electrons and Mg. On the other hand, the doping concentration will not significantly affect the light-emitting recombination of the light-emitting diode, thus ensuring the light-emitting efficiency.
[0137] For example, the doping concentration of the barrier layer is 5E17cm. -3 .
[0138] In the embodiments disclosed herein, the dopants used in the barrier layer are TMSb and Si2H6.
[0139] The Si₂H₆ dopant is used at a concentration of 0.2–0.8 sccm, and the TMSb dopant is used at a concentration of 0.5–1 sccm. The Si₂H₆ dopant at these concentrations acts to block Mg diffusion, while the TMSb dopant at these concentrations alters the band gap and blocks electron interaction.
[0140] 411. A P-type AlInP confinement layer is formed on the barrier layer.
[0141] In this embodiment, the thickness of the p-type AlInP confinement layer is 300–800 nm, the dopant is Cp₂Mg, and the doping concentration is 3E¹⁷–1E¹⁸ cm⁻¹.-3 .
[0142] For example, the thickness of the p-type AlInP confinement layer is 500 nm, and the doping concentration is 3E17 to 1E18 cm⁻¹. -3 .
[0143] 412. Fabricate a P-type AlGaInP transition layer on the P-type AlInP confinement layer.
[0144] In this embodiment, the thickness of the p-type AlGaInP transition layer is 10–50 nm, the dopant is Cp₂Mg, and the doping concentration is 3E¹⁸–1E¹⁹ cm⁻¹. -3 .
[0145] For example, the thickness of the p-type AlGaInP transition layer is 30 nm, and the doping concentration is 6E18 cm⁻¹. -3 .
[0146] 413. Fabricate a P-type GaP current spreading layer on the P-type AlGaInP transition layer.
[0147] In this embodiment, the thickness of the P-type GaP current spreading layer is 5–10 μm, the dopant is Cp₂Mg, and the doping concentration is 4E¹⁷–3E¹⁸ cm⁻¹. -3 .
[0148] For example, the thickness of the P-type GaP current spreading layer is 8 μm, and the doping concentration is 1E18 cm⁻¹. -3 .
[0149] Figure 5 This is a schematic diagram comparing the cooling and heating ratios of light-emitting diodes provided in this disclosure and those provided in related technologies. See also... Figure 5 The upper curve is the cold-to-hot ratio curve of the light-emitting diode provided in the embodiments of this disclosure, and the lower curve is the cold-to-hot ratio curve of the light-emitting diode provided in the related art.
[0150] The horizontal axis represents the temperature ratio, and the vertical axis represents the hot-cold ratio. It can be seen that the hot-cold ratio of the light-emitting diode provided in this embodiment is significantly improved compared to the light-emitting diodes provided in related technologies.
[0151] Figure 6 This is a schematic diagram comparing the light intensity of a light-emitting diode (LED) provided in this disclosure embodiment and an LED provided in related technologies. See also... Figure 6 The upper curve is the light intensity curve corresponding to the light-emitting diode provided in the embodiments of this disclosure, and the lower curve is the light intensity curve corresponding to the light-emitting diode provided in the related technology.
[0152] The horizontal axis represents current, measured in mA; the vertical axis represents luminous intensity, measured in mcd. It can be seen that the luminous intensity of the light-emitting diode provided in this embodiment is significantly improved compared to the light-emitting diodes provided in related technologies.
[0153] The above description is merely an embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A light-emitting diode, characterized in that, The light-emitting diode comprises an N-type AlInP confinement layer (101), an N-plane AlGaInP waveguide layer (102), a light-emitting layer (103), a P-plane AlGaInP waveguide layer (104), a blocking layer (105), and a P-type AlInP confinement layer (106) stacked sequentially. The barrier layer (105) is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer, and the barrier layer (105) is doped with Si and Sb elements.
2. The light-emitting diode according to claim 1, characterized in that, The thickness of the barrier layer (105) is 10-100 nm.
3. The light-emitting diode according to claim 1, characterized in that, The doping concentration of the barrier layer (105) is 1E17 to 1E18 cm⁻¹. -3 .
4. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The light-emitting diode also includes: The GaAs substrate (100), N-type GaAs buffer layer (107), N-type GaInP etch stop layer (108), N-type GaAs ohmic contact layer (109), N-type GaInP electrode adhesion layer (110) and N-type AlGaInP current spreading layer (111) are stacked sequentially. The N-type AlInP confinement layer (101) is located between the N-type AlGaInP current spreading layer (111) and the N-plane AlGaInP waveguide layer (102).
5. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The light-emitting diode also includes: A P-type AlGaInP transition layer (112) and a P-type GaP current spreading layer (113) are sequentially stacked on the P-type AlInP confinement layer (106).
6. A method for fabricating a light-emitting diode, characterized in that, The method for manufacturing the light-emitting diode includes: Fabrication of an N-type AlInP confinement layer; An N-plane AlGaInP waveguide layer is fabricated on the N-type AlInP confinement layer; A light-emitting layer is fabricated on the N-plane AlGaInP waveguide layer; A P-plane AlGaInP waveguide layer is fabricated on the light-emitting layer; A blocking layer is fabricated on the P-plane AlGaInP waveguide layer. The blocking layer is an AlInP layer, a GaInP layer, or an AlInP / GaInP superlattice layer. The blocking layer is doped with Si and Sb elements. A P-type AlInP confinement layer is fabricated on the barrier layer.
7. The method for fabricating a light-emitting diode according to claim 6, characterized in that, The thickness of the barrier layer is 10–100 nm.
8. The method for fabricating a light-emitting diode according to claim 6, characterized in that, The doping concentration of the barrier layer is 1E17 to 1E18 cm⁻¹ -3 .
9. The method for fabricating a light-emitting diode according to any one of claims 6 to 8, characterized in that, The method for manufacturing the light-emitting diode further includes: Fabrication of an N-type GaAs buffer layer on a GaAs substrate; An N-type GaInP etch stop layer is fabricated on the N-type GaAs buffer layer; An N-type GaAs ohmic contact layer is fabricated on the N-type GaInP etch stop layer; An N-type GaInP electrode adhesion layer is fabricated on the N-type GaAs ohmic contact layer; An N-type AlGaInP current spreading layer is fabricated on the N-type GaInP electrode adhesion layer, and the N-type AlInP confinement layer is located between the N-type AlGaInP current spreading layer and the N-plane AlGaInP waveguide layer.
10. The method for fabricating a light-emitting diode according to any one of claims 6 to 8, characterized in that, The method for manufacturing the light-emitting diode further includes: A P-type AlGaInP transition layer is fabricated on the P-type AlInP confinement layer; A P-type GaP current spreading layer is fabricated on the P-type AlGaInP transition layer.