Method and device for determining failure of field effect transistor in battery and electronic equipment

Abstract

The invention discloses a method and device for determining failure of a field effect transistor in a battery and electronic equipment, and belongs to the field of batteries. The method for determining the failure of the field effect transistor in the battery comprises the steps of obtaining target data within a preset time under the condition that the field effect transistor in the battery is determined to be in an off state and current exists in a charging and discharging loop of the battery, the target data comprises at least one of a voltage change value of the battery and a temperature change value of the field effect transistor; and under the condition that the target data is greater than a preset threshold value, determining that the field effect transistor is invalid.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of battery, and particularly relates to a method and device for determining failure of a field effect transistor in a battery and an electronic device. BACKGROUND

[0002] With the popularity of electronic devices and the development of new energy technology, a battery management system (BMS) plays an increasingly important role in the field of consumer electronics such as notebook batteries. In the battery management system, a field effect transistor (FET) as a power switching device is widely used in the charging and discharging circuit of the battery to control the conduction or disconnection of the charging and discharging circuit of the battery. However, the FET may fail due to factors such as current stress, voltage stress, and temperature change during long-term use, resulting in system failure and even safety hazards.

[0003] In the related art, whether the FET fails is usually determined by detecting whether there is current in the charging and discharging circuit of the battery when the FET in the battery is disconnected. If there is current in the charging and discharging circuit of the battery when the FET in the battery is disconnected, it is determined that the FET fails. However, if there is external interference when the FET in the battery is disconnected, the charging and discharging circuit of the battery may also have current, which may misjudge that the FET fails, and the accuracy of FET failure determination is low. SUMMARY

[0004] The present application discloses a method and device for determining failure of a field effect transistor in a battery and an electronic device, which can improve the accuracy of FET failure determination.

[0005] To solve the above problems, the present application adopts the following technical solutions: In a first aspect, the present application discloses a method for determining failure of a field effect transistor in a battery, comprising: acquiring target data within a preset time under the condition that it is determined that the field effect transistor in the battery is in a disconnected state and there is current in the charging and discharging circuit of the battery, wherein the target data comprises at least one of a voltage change value of the battery and a temperature change value of the field effect transistor; and determining that the field effect transistor fails under the condition that the target data is greater than a preset threshold.

[0006] In a second aspect, the embodiments of the present application disclose a device for determining failure of a field effect transistor in a battery, comprising: an acquisition module, configured to acquire target data within a preset time under the condition that a field effect transistor in a battery is determined to be in an off state and there is current in a charge-discharge circuit of the battery, wherein the target data comprises at least one of a voltage change value of the battery and a temperature change value of the field effect transistor; and a determination module, configured to determine that the field effect transistor is failed under the condition that the target data is greater than a preset threshold.

[0007] In a third aspect, the embodiments of the present application provide an electronic device, comprising a processor and a memory, wherein the memory stores programs or instructions executable on the processor, and the programs or instructions are executed by the processor to implement the steps of the method according to the first aspect.

[0008] In a fourth aspect, the embodiments of the present application provide a computer readable storage medium, wherein computer executable programs or instructions are stored on the computer readable storage medium, and the computer executable programs or instructions are executed by a computer to implement the steps of the method according to the first aspect.

[0009] In a fifth aspect, the embodiments of the present application provide a computer program product, comprising a computer program stored on a non-transitory computer readable storage medium, wherein the computer program comprises program instructions, and the program instructions are executed by a computer to implement the steps of the method according to the first aspect.

[0010] The technical solutions adopted by the present application can achieve the following beneficial effects: The embodiments of the present application provide a method for determining failure of a field effect transistor in a battery, under the condition that a field effect transistor in a battery is determined to be in an off state and there is current in a charge-discharge circuit of the battery, target data within a preset time is acquired, the target data comprises at least one of a voltage change value of the battery and a temperature change value of the field effect transistor, and under the condition that the target data is greater than a preset threshold, the field effect transistor is determined to be failed. By using the technical solutions of the present application, under the condition that a field effect transistor is determined to be in an off state and there is current in a charge-discharge circuit of a battery, at least one of a voltage change value of the battery and a temperature change value of the field effect transistor within a preset time is continuously acquired, further determination is performed, it is ensured that the FET is truly failed, false judgment is avoided, the accuracy and reliability of FET failure determination can be improved, and the system failure rate can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 FIG. 1 is a flowchart of a method for determining failure of a field effect transistor in a battery according to an embodiment of the present application; Figure 2 This is a voltage change diagram of a field-effect transistor disclosed in an embodiment of this application when it fails while the battery is charging; Figure 3 This is a voltage change diagram of a field-effect transistor disclosed in an embodiment of this application when it fails while the battery is in a discharging state; Figure 4 This is a schematic diagram of the structure of a battery field-effect transistor failure determination device disclosed in an embodiment of this application; Figure 5 This is a schematic diagram of the structure of an electronic device disclosed in an embodiment of this application. Detailed Implementation

[0012] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0013] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the electrically connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0014] The following description, in conjunction with the accompanying drawings, details the method, apparatus, and electronic device for determining the failure of a field-effect transistor in a battery disclosed in this application, through specific embodiments and application scenarios.

[0015] This application discloses a method for determining the failure of a field-effect transistor in a battery. Figure 1 This is a flowchart illustrating a method for determining the failure of a field-effect transistor in a battery, as disclosed in an embodiment of this application. Figure 1 As shown, the method includes the following steps: S120. When it is determined that the field-effect transistor in the battery is in the off state and there is current in the charging and discharging circuit of the battery, acquire target data within a preset time.

[0016] The target data includes at least one of the voltage change value of the battery and the temperature change value of the field-effect transistor.

[0017] The scheme of the present application can be applied to a control device in a battery, for example, a control device in a protection chip of the battery, executed by a BMS algorithm.

[0018] The control end of the field effect transistor in the battery is electrically connected with the charge-discharge control end of the protection chip in the battery, the first end of the field effect transistor is electrically connected with the negative electrode of the battery cell in the battery, and the second end of the field effect transistor is electrically connected with the negative electrode of the battery connector in the battery. It is determined that the field effect transistor in the battery is in an off state, that is, the charge-discharge control end of the protection chip sends a cut-off instruction to the control end of the field effect transistor, which indicates that the electrical connection between the first end and the second end of the field effect transistor is disconnected. If the field effect transistor fails, the first end and the second end of the field effect transistor are still connected after the charge-discharge control end of the protection chip sends the above-mentioned cut-off instruction to the control end of the field effect transistor. In this case, there is a charging current or a discharging current in the charge-discharge circuit of the battery, that is, the current value in the charge-discharge circuit of the battery is greater than zero.

[0019] In combination with the influence of interference factors, in the case that the field effect transistor in the battery is determined to be in an off state and there is a current in the charge-discharge circuit of the battery, the field effect transistor may fail, and then target data in a preset time period is obtained to accurately determine whether the field effect transistor fails.

[0020] It should be noted that in the case that the field effect transistor (FET) in the battery fails, the impedance becomes large, resulting in a large amount of heat generated by the FET when the current flows, the temperature of the field effect transistor changes, and the battery continues to be charged or discharged, thereby changing the voltage of the battery.

[0021] Exemplarily, the preset time can be 30s. It should be noted that this is only an example, and the present application does not limit the specific value of the preset time.

[0022] S140, in the case that the target data is greater than a preset threshold, it is determined that the field effect transistor fails.

[0023] In the present application, the preset threshold value corresponding to the voltage change value of the battery can be a first threshold value, and the preset threshold value corresponding to the temperature change value of the field effect transistor can be a second threshold value. In the case that the voltage change value of the battery in the preset time is greater than the first threshold value and / or the temperature change value of the field effect transistor in the preset time is greater than the second threshold value, it is determined that the field effect transistor fails.

[0024] Exemplarily, the second threshold value can be 8℃, and the specific values of the first threshold value and the second threshold value can also be set according to actual needs.

[0025] This application provides a method for determining the failure of a field-effect transistor (FET) in a battery. When it is determined that the FET in the battery is in an off state and there is current in the battery's charging / discharging circuit, target data is acquired within a preset time period. This target data includes at least one of the battery's voltage change value and the FET's temperature change value. If the target data exceeds a preset threshold, the FET is determined to have failed. By employing the technical solution of this application, even when it is determined that the FET is in an off state and there is current in the battery's charging / discharging circuit, at least one of the battery's voltage change value and the FET's temperature change value is acquired within a preset time period for further judgment. This ensures that the FET is truly failed, avoids false positives, improves the accuracy and reliability of FET failure determination, and reduces the system failure rate.

[0026] In addition, the method for determining the failure of field-effect transistors in batteries provided in this application is highly efficient and low-cost.

[0027] In this embodiment, the preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, determining that the field-effect transistor has failed when the target data is greater than the preset threshold may include: determining that the field-effect transistor has failed when the battery is in a charging state when the voltage change value of the battery is greater than the first threshold and the voltage change value is positive. That is, if the battery voltage increases within a preset time, it is determined that the field-effect transistor has failed when the battery is in a charging state.

[0028] In one implementation, such as Figure 2 As shown, within a preset time period, the overall voltage change direction (positive or negative) can be determined by utilizing voltage changes occurring every 4 seconds. For example, the first voltage change, DeltaV1, is determined based on the first 1s to 4s, followed by the second, DeltaV2, from the 2nd to 5th seconds, and so on. This overall voltage change direction ensures that the voltage exhibits a unidirectional change within the preset time period. It should be noted that... Figure 2 This is a graph showing the voltage change when the field-effect transistor fails while the battery is charging.

[0029] In this embodiment, the preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, determining that the field-effect transistor has failed when the target data is greater than the preset threshold can include: determining that the field-effect transistor has failed when the battery is in a discharging state when the voltage change value of the battery is greater than the first threshold and the voltage change value is negative. That is, if the battery voltage decreases within a preset time, it is determined that the field-effect transistor has failed when the battery is in a discharging state. It should be noted that... Figure 3 This is a diagram showing the voltage change when the field-effect transistor fails while the battery is discharging.

[0030] In one implementation, such as Figure 3 As shown, within a preset time period, the overall voltage change direction can be determined by the voltage change every 4 seconds. For example, the first voltage change DeltaV1 is determined based on the first 1 second to the 4th second, and the second voltage DeltaV2 is determined based on the second 2nd to the 5th second, and so on. The voltage change direction is determined based on the overall voltage change, ensuring that the voltage changes in one direction within the preset time period.

[0031] In this embodiment of the application, after determining that the field-effect transistor (FET) has failed, the process may further include: sending a control signal to a fuse in the battery, wherein the control signal is used to instruct the electrical connection between a first terminal and a second terminal of the fuse to be broken, the first terminal of the fuse being electrically connected to the positive terminal of a cell in the battery, and the second terminal of the fuse being electrically connected to the positive terminal of a battery connector in the battery. After determining that the FET has failed, sending a control signal to the fuse in the battery cuts off the main circuit, providing permanent protection and preventing safety hazards caused by overcharging or over-discharging due to FET failure, thereby improving safety.

[0032] The method for determining the failure of a battery-grown field-effect transistor (FET) provided in this application can be executed by a device for determining the failure of a battery-grown FET. This application uses an example of a device for determining the failure of a battery-grown FET executing the method for determining the failure of a battery-grown FET to illustrate the device provided in this application.

[0033] Figure 4 This is a schematic diagram of a device for determining the failure of a field-effect transistor in a battery, as disclosed in an embodiment of this application. Figure 4 As shown, the device 400 for determining the failure of a field-effect transistor in a battery includes an acquisition module 410 and a determination module 420.

[0034] In this application, the acquisition module 410 is used to acquire target data within a preset time when it is determined that the field-effect transistor in the battery is in an off state and there is current in the charging and discharging circuit of the battery. The target data includes at least one of the voltage change value of the battery and the temperature change value of the field-effect transistor. The determination module 420 is used to determine that the field-effect transistor is faulty when the target data is greater than a preset threshold.

[0035] In one implementation, a preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, the determining module 420 determines that the field-effect transistor has failed when the target data is greater than the preset threshold. This includes: when the voltage change value of the battery is greater than the first threshold and the voltage change value is positive, determining that the field-effect transistor has failed when the battery is in a charging state.

[0036] In one implementation, a preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, the determining module 420 determines that the field-effect transistor has failed when the target data is greater than the preset threshold. This includes determining that the field-effect transistor has failed when the battery is in a discharging state when the voltage change value of the battery is greater than the first threshold and the voltage change value is negative.

[0037] In one implementation, the above-mentioned device further includes: a transmitting module, configured to send a control signal to a fuse in the battery after determining that the field-effect transistor has failed, wherein the control signal is configured to instruct the electrical connection between a first end and a second end of the fuse to be fused, the first end of the fuse being electrically connected to the positive terminal of a cell in the battery, and the second end of the fuse being electrically connected to the positive terminal of a battery connector in the battery.

[0038] Optionally, such as Figure 5 As shown, this application embodiment also provides an electronic device 500, including a processor 501 and a memory 502. The memory 502 stores a program or instructions that can run on the processor 501. When the program or instructions are executed by the processor 501, they implement the various steps of the above-described method embodiment for determining the failure of a field-effect transistor in a battery, and can achieve the same technical effect. To avoid repetition, they will not be described again here.

[0039] It should be noted that the electronic devices in the embodiments of this application include mobile electronic devices and non-mobile electronic devices.

[0040] This application also provides a computer-readable storage medium storing a computer-executable program or instructions. When the computer-executable program or instructions are executed by a computer, they implement the various processes of the above-described method for determining the failure of a field-effect transistor in a battery, and achieve the same technical effect. To avoid repetition, they will not be described again here.

[0041] The computer-readable storage medium may be a computer read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0042] This application also provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions that, when executed by a computer, cause the computer to perform the steps of the method for determining the failure of a field-effect transistor in a battery as described above.

[0043] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0044] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for determining the failure of a field-effect transistor in a battery, characterized in that, include: When it is determined that the field-effect transistor in the battery is in the off state and there is current in the charging and discharging circuit of the battery, target data within a preset time period is acquired, wherein the target data includes at least one of the voltage change value of the battery and the temperature change value of the field-effect transistor. If the target data exceeds a preset threshold, the field-effect transistor is determined to be faulty.

2. The determination method according to claim 1, characterized in that, A preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, determining that the field-effect transistor has failed when the target data is greater than the preset threshold includes: If the voltage change of the battery is greater than the first threshold and the voltage change is positive, it is determined that the field-effect transistor has failed while the battery is charging.

3. The determination method according to claim 1, characterized in that, A preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, determining that the field-effect transistor has failed when the target data is greater than the preset threshold includes: If the voltage change of the battery is greater than the first threshold and the voltage change is negative, it is determined that the field-effect transistor has failed when the battery is in a discharging state.

4. The determination method according to claim 1, characterized in that, After determining that the field-effect transistor has failed, the method further includes: A control signal is sent to the fuse in the battery, wherein the control signal is used to instruct the electrical connection between the first end and the second end of the fuse to be broken, the first end of the fuse being electrically connected to the positive terminal of the cell in the battery, and the second end of the fuse being electrically connected to the positive terminal of the battery connector in the battery.

5. A device for determining the failure of a field-effect transistor in a battery, characterized in that, include: The acquisition module is used to acquire target data within a preset time when it is determined that the field-effect transistor in the battery is in the off state and there is current in the charging and discharging circuit of the battery. The target data includes at least one of the voltage change value of the battery and the temperature change value of the field-effect transistor. The determination module is used to determine that the field-effect transistor has failed when the target data is greater than a preset threshold.

6. The determining device according to claim 5, characterized in that, A preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, the determining module determines that the field-effect transistor has failed if the target data is greater than the preset threshold, including: If the voltage change of the battery is greater than the first threshold and the voltage change is positive, it is determined that the field-effect transistor has failed while the battery is charging.

7. The determining device according to claim 5, characterized in that, A preset threshold corresponding to the voltage change value of the battery is a first threshold. When the target data includes the voltage change value of the battery, the determining module determines that the field-effect transistor has failed if the target data is greater than the preset threshold, including: If the voltage change of the battery is greater than the first threshold and the voltage change is negative, it is determined that the field-effect transistor has failed when the battery is in a discharging state.

8. An electronic device, characterized in that, It includes a processor and a memory, the memory storing a program or instructions that can run on the processor, the program or instructions being executed by the processor to implement the steps of the method for determining the failure of a field-effect transistor in a battery as described in any one of claims 1-4.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer-executable program or instructions, which, when executed by a computer, implement the steps of the method for determining the failure of a field-effect transistor in a battery as described in any one of claims 1-4.

10. A computer program product, characterized in that, The computer program product includes a computer program stored on a non-transitory computer-readable storage medium, the computer program including program instructions that, when executed by a computer, cause the computer to perform the steps of the method for determining the failure of a field-effect transistor in a battery as described in any one of claims 1-4.

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