Semiconductor aging test box and test method thereof

Abstract

The invention relates to the technical field of semiconductor aging tests, in particular to a semiconductor aging test box and a test method thereof.The semiconductor aging test box is used for applying a simulation working environment to a to-be-tested device and conducting electrical parameter monitoring, the semiconductor aging test box comprises a box body, a partition plate, a cold box and a distribution plate, and the cold box is opposite to the to-be-tested device installed on the partition plate; the distribution plate divides the inner cavity of the cold box into a high-pressure layer and a refrigerating layer, the high-pressure layer is far away from the partition plate relative to the refrigerating layer, the high-pressure layer is communicated with refrigerating fluid, and the refrigerating fluid is injected into the refrigerating layer at high pressure through the hollowed-out distribution plate. The heating power of the corresponding area of the to-be-tested device is adapted by adjusting the number and the size of the local holes of the distribution plate. According to the invention, the distribution plate and the column plate are customized, and the nozzles and the columns with different densities are configured in corresponding areas according to the heating power of the device, so that the purpose of on-demand heat dissipation of non-uniform heat on the semiconductor is achieved, local overheating is avoided, and ultra-amplitude cooling of a low-heating area is avoided at the same time.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor aging test, in particular to a semiconductor aging test chamber and a test method thereof. BACKGROUND

[0002] In the electronic device reliability engineering evaluation, the accelerated aging test is a key process, which is used to verify and screen potential early failure semiconductor devices. At present, the application of high power density semiconductor components is continuously expanding, which makes the traditional aging test system face severe challenges in the simulation of working conditions, and the core of the challenge is high-precision thermal stress loading and control.

[0003] In the aging test, the powered device under test is long-term in the heating environment, and the accurate stability of the device junction temperature is the primary condition to ensure the objectivity and repeatability of the test data. The traditional aging test platform uses solid heat conduction mechanism for heat dissipation, which tightly contacts the device under test through the metal heat sink, and vertically exports the heat.

[0004] However, for new devices with ultra-high heat flow density (such as more than 100W / cm²), this heat management scheme has inherent defects: under the action of high heat flow stress, the inherent thermal conductivity of metal materials limits its heat uniformity, which makes the transverse temperature uniformity of the heat sink base lag far behind the heat generation rate inside the device, and further causes heat accumulation in the center area, resulting in the formation of local hot spots on the package surface, thereby causing significant temperature gradient inside the device under test. Not only does the heat generation area burn out due to overheating, but also the temperature uniformity of the test environment is difficult to meet the requirements of high-precision test specifications, thereby affecting the effectiveness of electrical parameter monitoring, and causing test data distortion.

[0005] Therefore, a semiconductor aging test chamber and a test method thereof are provided. SUMMARY

[0006] The present application aims to provide a semiconductor aging test chamber and a test method thereof, which solves the problem of local overheating caused by metal heat conduction lag in high-power semiconductor aging test. By customizing the distribution plate and the column plate, and configuring different densities of nozzles and columns in the corresponding area according to the heat power of the device, the purpose of on-demand heat dissipation of non-uniform heat on the semiconductor is achieved, so as to avoid local overheating and excessive cooling in low heat generation area.

[0007] To achieve the above purpose, the present application provides the following technical scheme: A semiconductor aging test box for applying simulated working environment to a device under test and monitoring electrical parameters, comprising a box body, a partition plate, a cold box and a distribution plate, the cold box is opposite to the device under test installed on the partition plate, and the contact area of the cold box and the partition plate is larger than that of the device under test and the partition plate, the distribution plate separates the inner cavity of the cold box into a high-pressure layer and a refrigeration layer, the high-pressure layer is away from the partition plate relative to the refrigeration layer, and the high-pressure layer is communicated with the refrigeration liquid, the refrigeration liquid is injected into the refrigeration layer at high pressure through the distribution plate, and the number and size of the holes of the distribution plate are adjusted to adapt to the heat power of the corresponding area of the device under test.

[0008] Preferably, in order to timely discharge different heat of each area of the device under test, a nozzle is arranged on the distribution plate, the number of the nozzles of the local area of the distribution plate is positively correlated with the heat power of the corresponding area of the device under test, and the caliber of the nozzles of the local area of the distribution plate is negatively correlated with the heat power of the corresponding area of the device under test; In the above scheme, the nozzles of the corresponding area are differently arranged according to the local heat power of the device under test, in the high-power heat area, the distribution density of the nozzles is high and the caliber is small, forming a high-flow-rate and high-density impact jet group to generate a very high convective heat transfer coefficient, thereby strengthening the heat dissipation of the high-power heat area; in the low-power heat area, the distribution density of the nozzles is small or no hole is arranged, and the caliber is large, only the splashing process after the impact of the cooling liquid is used for auxiliary heat dissipation, so as to weaken the heat dissipation of the low-power heat area. Therefore, through the active intervention of the flow field, the scheme not only solves the local overheating problem, but also realizes the intensive use of energy at the level of fluid mechanics: the limited pumping pressure is concentrated in the high heat flux density area, and the local high Reynolds number jet formed by the small caliber effectively destroys the thermal boundary layer; in the low-power area, the large caliber and low flow rate are adopted, which effectively reduces the overall flow resistance and pumping power consumption of the system, and prevents the results of the aging test from being interfered due to excessive cooling of the non-heating area.

[0009] Preferably, in order to fully absorb the heat discharged by the device under test, the refrigeration layer is provided with a column plate, one side of the column plate is attached to the partition plate, and the other side of the column plate is provided with a convex column body; In the above scheme, through the arrangement of the column body on the column plate, a large amount of heat rapidly propagating along the longitudinal direction can be absorbed, and the column body can be in large-area contact with the cooling liquid sprayed by the nozzle, the column body acts as a "vertical high-speed channel" for heat, and the Joule heat generated in the heating area is directly led out to the solid-liquid interface in the shortest path, so that the heat dissipation rate and the heat generation rate are kept synchronous in the time axis, thereby accelerating the heat dissipation of the heating area.

[0010] Preferably, in order to control the heat absorption intensity of the column body in different areas, the number and length of the column bodies in the local area of the column plate are positively correlated with the heat power of the corresponding area of the device under test; In the above scheme, the column bodies in the corresponding regions are set differently according to the local heating power of the component to be tested. In the high-power heating region, the column bodies have a large distribution density and a large length to fully contact the cooling liquid sprayed by the nozzle, and thus the convective heat transfer coefficient is further improved to strengthen the heat dissipation in the high-power heating region. In the low-power heating region, the column bodies have a small distribution density and a small length to reduce the contact area between the column bodies and the cooling liquid, and thus the heat dissipation in the low-power heating region is weakened.

[0011] Preferably, in order to make the column bodies fully contact the cooling liquid, the cross section of the column bodies is gradually changed, and the column bodies have a sharp end which faces the distribution plate. In the above scheme, the sharp end of the column body effectively disturbs or destroys the thermal boundary layer of the jet flow, thereby ensuring that the low-temperature cooling liquid fully convectively exchanges heat with the side wall of the column body to ensure the heat dissipation efficiency through large-area heat exchange, and reducing the impact of the jet flow on the column plate to enhance the stability of the test box.

[0012] Preferably, in order to adapt to different specifications of the device to be tested, the distribution plate and the column plate are detachably mounted, the cooling box comprises a box body and a box cover, and the box body is provided with a sliding groove for limiting the distribution plate and the column plate. Different specifications of the device to be tested have different numbers and positions of heating regions, and the heat dissipation requirements are also different. Therefore, the distribution plate and the column plate need to be customized. In the above scheme, the distribution plate and the column plate are mounted in the box body through the sliding groove to complete the mounting and dismounting through the sliding connection.

[0013] Preferably, in order to recycle the column bodies, the column bodies are detachably connected to the column plate. In the above scheme, through the detachable connection of the column bodies on the column plate, when the column plate is replaced, the column bodies can be retained by dismounting and installed on the new column plate for recycling, thereby reducing the test cost of the device to be tested.

[0014] Preferably, in order to circulate the cooling liquid in the high-pressure layer and the refrigeration layer, the high-pressure layer and the refrigeration layer are respectively provided with an inlet and an outlet, and the inlet and the outlet are communicated with a circulation tank outside the box.

[0015] Preferably, in order to timely discharge the cooling liquid on the surface of the distribution plate to make the nozzle smooth, a flow guide groove is formed on the surface of the refrigeration layer where the distribution plate is located, and the flow guide groove is connected with the outlet. In the above scheme, through the flow guide groove, the cooling liquid sprayed by the nozzle and returned to the distribution plate is timely guided to the outlet, so as to avoid the accumulation of the cooling liquid at the outlet end of the nozzle, and thus ensure the smoothness of the nozzle.

[0016] The test method of the semiconductor aging test box includes the following four stages: 1. According to the power distribution map of the device to be tested, the distribution plate and the column plate are configured, the configured distribution plate and column plate are loaded into the cold box, and the device to be tested is positioned on the partition plate; 2. High-pressure refrigerant is pumped into the high-pressure layer of the cold box, and the refrigerant is injected into the refrigeration layer through the nozzle of the distribution plate under the action of pressure; 3. Through the differentiated nozzle of the distribution plate, a high-flow-rate and high-density jet group is formed in the high-power area of the device to be tested, which impacts and wraps the corresponding column; 4. The column conducts the non-uniform heat generated by the device to be tested to the refrigeration layer, and the heat is taken away by the jet flushing of different intensities, and the refrigerant after heat absorption is discharged to the circulating tank for cooling circulation.

[0017] Compared with the prior art, the beneficial effects of the present application are: 1. The distribution plate and the column plate are customized according to the power distribution map of the device to be tested, the high-density and small-aperture nozzles are configured in the high-power corresponding area of the distribution plate to form a high-flow-rate jet group, and the high-density and long-size columns are configured in the corresponding area of the column plate to maximize the longitudinal heat conduction path and the heat exchange area, thereby forcing the heat to be quickly conducted to the cooling medium along the shortest path in the vertical direction, avoiding the delay of the lateral diffusion of the heat in the center of the heating area, preventing the local overheating and burning of the device to be tested, and avoiding the excessive cooling of the low-power area, thereby ensuring the accuracy of the aging test.

[0018] 2. The column in the present application has a cross-section that gradually changes and a sharp end structure facing the distribution plate, which can effectively pierce the boundary layer of the jet, ensure that the low-temperature cooling liquid directly flushes the side wall of the column, thereby increasing the heat exchange area, and at the same time, the surface of the distribution plate matched with it is provided with a flow guide groove connected to the liquid outlet, which can quickly discharge the waste liquid after heat exchange, thereby preventing the weakening of the subsequent jet impact kinetic energy caused by the "water cushion effect" formed by the accumulation of waste liquid.

[0019] 3. The distribution plate and the column plate in the present application are detachably installed in the box body through the sliding groove, and the column is detachably connected to the column plate through the thread, when the specification or power distribution of the device to be tested changes, only the opening layout of the distribution plate needs to be reprocessed or the arrangement of the columns on the column plate needs to be adjusted at low cost, or even the old column can be directly disassembled and installed on the new plate for recycling, thereby improving the compatibility and economy of the test box for multiple types of semiconductor aging tests. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 It is a schematic diagram of the overall isometric structure of the present application; Figure 2 It is a schematic diagram of the internal structure of the cold box of the present application; Figure 3 It is a schematic diagram of the Figure 2 enlarged schematic diagram of part A in the present application Figure 4 A schematic diagram of the front view structure of the cold box of the present application is shown in Figure 1. Figure 5 A schematic diagram of the cold box of the present application is shown in Figure 2. Figure 4 An enlarged schematic diagram of part B of Figure 1 is shown in Figure 3. Figure 6 A schematic diagram of the installation of the cold box of the present application is shown in Figure 4. Figure 7 A schematic diagram of the column plate structure of the present application is shown in Figure 5. Figure 8 A schematic diagram of the distribution plate structure of the present application is shown in Figure 6.

[0021] In the figure: 1, box body; 2, partition; 3, device under test; 31, heat generating area; 4, cold box; 41, high pressure layer; 411, liquid inlet; 42, refrigeration layer; 421, liquid outlet; 43, box body; 431, chute; 44, box cover; 5, distribution plate; 51, nozzle; 52, flow guide groove; 6, column plate; 61, column body; 611, sharp end; 7, circulating tank. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0023] Please refer to Figures 1 to 8 The present application provides a semiconductor aging test box and a test method thereof, and the technical solutions are as follows: A semiconductor aging test box for applying a simulated working environment to a device under test 3 and monitoring electrical parameters, comprising a box body 1, a partition 2, a cold box 4 and a distribution plate 5. The partition 2 is installed in layers inside the box body 1 for bearing the device under test 3, and is made of a high-thermal-conductivity metal material to reduce the vertical thermal resistance. The aging test is a destructive test, and the thermal environment provided by the box body 1 accelerates the aging of the device under test 3, thereby evaluating the service performance of the device under test 3 in a relatively short time. The cold box 4 is opposite to the device under test 3 installed on the partition 2, and the shell of the cold box 4 is made of an engineering plastic or stainless steel that is resistant to high temperature and corrosion, to withstand the high-temperature environment of the aging test and the pressure of the cooling liquid. Referring to Figure 1In the present mode, the device to be tested 3 is placed above the partition plate 2 and positioned, and the cold box 4 is installed below the partition plate 2, and the contact area of the cold box 4 and the partition plate 2 is larger than the contact area of the device to be tested 3 and the partition plate 2, and preferably, the contact area of the cold box 4 and the partition plate 2 is 1.1 to 2.0 times the contact area of the device to be tested 3 and the partition plate 2, so as to avoid space waste while ensuring sufficient heat exchange, and in order to further eliminate the contact thermal resistance, high-thermal-conductivity silicone grease or phase-change thermal-conductivity gaskets are coated between the device to be tested 3 and the partition plate 2 and between the contact surfaces of the partition plate 2 and the cold box 4; the distribution plate 5 divides the inner cavity of the cold box 4 into a high-pressure layer 41 and a refrigeration layer 42, the high-pressure layer 41 is away from the partition plate 2 relative to the refrigeration layer 42, and the high-pressure layer 41 is communicated with refrigerant, and the design pressure value of the high-pressure layer 41 should be at least 0.8 MPa, so as to ensure that the structure does not deform when the high-pressure refrigerant is pumped in, and the refrigerant is injected into the refrigeration layer 42 through the hollow distribution plate 5, and the number and size of the holes in the local area of the distribution plate 5 are adjusted to adapt to the heat power of the corresponding area of the device to be tested 3.

[0024] As an embodiment of the present application, refer to Figures 1 to 3 The distribution plate 5 is provided with a plurality of nozzles 51, and the number of the nozzles 51 in the local area of the distribution plate 5 is positively correlated with the heat power of the corresponding area of the device to be tested 3, and the caliber of the nozzles 51 in the local area of the distribution plate 5 is negatively correlated with the heat power of the corresponding area of the device to be tested 3; In the present mode, taking a circular heat area 31 in the center of the device to be tested 3 as an example, due to the low speed of heat transverse propagation, the closer to the center of the circular heat area 31, the more difficult the heat is to dissipate, therefore, in the present mode, the equal-number annular array of nozzles 51 is made to radiate outward along a straight line with the center of the heat area 31 as a reference, and the caliber of the nozzles 51 closer to the center is smaller, and further, when the cooling liquid in the high-pressure layer 41 is injected into the refrigeration layer 42, the flow rate and density of the jet flow closer to the center are greater, that is, the convective heat transfer coefficient with the heat area 31 is higher; in actual tests, according to different shapes of the heat area 31, the nozzles 51 can be adjusted accordingly; In the manufacturing process, the distribution plate 5 is processed by CNC precision machining; as for the preferred range of the parameters of the nozzles 51: in the core high-heat area 31 of the device to be tested 3 with a heat flux density exceeding 100 W / cm², the caliber of the nozzles 51 is set to 0.5-1.0 mm, and the hole spacing is set to 2-4 mm; while in the edge low-heat area 31, the caliber of the nozzles 51 can be increased to 2.0-3.0 mm, and the hole spacing is increased to 8-10 mm, and further, a pressure difference gradient is established in the high-pressure layer 41 through the change of the caliber, and by using Bernoulli's principle, the fluid is forced to obtain a higher jet flow speed at the small caliber.

[0025] As an embodiment of the present application, refer to Figure 4The refrigeration layer 42 is provided with a column plate 6, one side of the column plate 6 is attached to the partition plate 2, and the other side of the column plate 6 is provided with a protruding column 61; the distance between the distribution plate 5 and the column plate 6 is a key parameter affecting the heat dissipation effect, and is preferably controlled to be between 5mm and 15mm, which can accommodate the column 61 and limit the disorderly escape of the fluid after the jet impact, and ensure the controlled backflow path.

[0026] As an embodiment of the present application, referring to Figure 5 The number and length of the column 61 in the local area of the column plate 6 are positively correlated with the heat generation power of the corresponding area of the device under test 3; In this mode, the column 61 is arranged similarly with reference to the arrangement shape of the jet port 51: with the center of the heat generation area 31 as the reference, the column 61 in the equi-number annular array radiates outward along a straight line, and the length of the column 61 closer to the center is larger, which further cooperates with the cooling liquid sprayed by different jet ports 51, the column 61 closer to the center is contacted with the jet with higher intensity, and the contact area is larger, which further quickly releases the heat absorbed by itself.

[0027] As an embodiment of the present application, referring to Figure 5 The cross section of the column 61 is gradually changed, and the column 61 has a sharp end 611, and the sharp end 611 of the column 61 faces the distribution plate 5; The specific shape of the column 61 is preferably a streamlined cone or pyramid, the root diameter of the column 61 is larger to reduce the thermal resistance of conduction; and the top of the column 61 gradually shrinks to the sharp end 611. This gradual change structure has two significant effects: first, the splash resistance when the jet impact is reduced, so that the cooling liquid can smoothly flow upward along the surface of the column 61; second, the heat capacity of the root of the column 61 is increased to prevent the root of the column 61 from being instantaneously heat saturated under high-power impact.

[0028] As an embodiment of the present application, referring to Figure 6 The distribution plate 5 and the column plate 6 can be detachably installed, the cold box 4 includes a box body 43 and a box cover 44, and the box body 43 is provided with a sliding groove 431 limiting the distribution plate 5 and the column plate 6; In the mode, the box body 43 is installed below the partition 2, and the box body 43 is provided with an opening towards the opening side of the cabinet 1, and the box cover 44 is installed at the opening of the box body 43, and the sliding rail module can be installed between the box cover 44 and the box body 43, or the detachable connection can be realized through the bolt connection and the like, so as to open and close the box body 43; when the box body 43 is opened, the distribution plate 5 and the column plate 6 are respectively slid into the box body 43 through the sliding grooves 431 below and above the box body 43, and when the box body 43 is closed, the sealing performance between the box body 43 and the box cover 44 is ensured, so as to prevent the cooling liquid in the high-pressure layer 41 from leaking out during work, and specifically, the sealing grooves are arranged at the edges of the distribution plate 5 and the column plate 6, and the high-temperature-resistant fluorine rubber O-shaped ring is embedded in the grooves, when the box cover 44 is installed on the box body 43, the inside of the box cover 44 is axially pressed against the distribution plate 5 and the column plate 6, so that the O-shaped ring is elastically deformed at the end surface of the sliding groove 431, thereby realizing high-pressure sealing. In addition, in order to ensure the accurate alignment of the nozzle 51 and the column body 61, the positioning pin or the foolproof clamping groove is arranged in the sliding groove 431, so as to ensure that the axial deviation is less than 0.1 mm after the plate body is slid to the bottom.

[0029] As an embodiment of the present application, refer to Figure 7 and Figure 8 The column body 61 is detachably connected to the column plate 6, one end of the column body 61 connected to the column plate 6 is provided with a thread, and a threaded hole for thread connection with the column body 61 is formed in the column plate 6. In the mode, the front ends of the column plate 6 and the distribution plate 5 are produced by the same process: the blank materials of the two are the same and the specifications are consistent, and the same size of the nozzle 51 is formed at the same position, and in the rear end process, the column plate 6 only needs to complete the tapping at the nozzle 51, thereby reducing the production cost through the combination of multiple processes; it should be noted that in order to ensure the heat conduction effect of the column plate 6 on the device to be tested 3, the column plate 6 should use high-thermal-conductivity materials.

[0030] As an embodiment of the present application, refer to Figure 6 The high-pressure layer 41 and the refrigeration layer 42 are respectively provided with an inlet 411 and an outlet 421, the inlet 411 and the outlet 421 are communicated with the circulating tank 7 outside the cabinet 1, the circulating tank 7 discharges the high-pressure cooling liquid to the high-pressure layer 41 while receiving the cooling liquid backflowing from the refrigeration layer 42, so as to realize the circulation of the cooling liquid. The circulating tank 7 is integrated with a variable frequency liquid pump and a heat exchanger; during the test, the liquid pump automatically adjusts the pump-in pressure according to the feedback of the temperature sensor, and a flow stabilizing grid is arranged at the inlet 411, so as to ensure that the fluid pressure entering the high-pressure layer 41 is uniformly distributed; the diameter of the outlet 421 should be larger than that of the inlet 411, so as to smoothly backflow the jet, thereby preventing the cooling liquid in the refrigeration layer 42 from accumulating on the surface of the distribution plate 5.

[0031] As an embodiment of the present application, refer to Figure 6 and Figure 8The distribution plate 5 is provided with a flow guide groove 52 on the surface of the refrigeration layer 42, and the flow guide groove 52 is connected with the liquid outlet 421; The flow guide groove 52 is processed at the rear end of the distribution plate 5, has a plurality of flow guide grooves 52, the cross-sectional shape of the flow guide groove 52 is preferably a "U" shape or a semicircle, and the layout should avoid the dense area of the spray port 51, specifically, the flow guide groove 52 takes the heat center area as the watershed, and extends to the liquid outlet 421 in a radial or fishbone shape, the groove depth gradually deepens from 0.5mm at the center to 3mm at the edge, and the gravity potential energy and fluid kinetic energy are used to guide the "waste liquid" after heat exchange to quickly evacuate, thereby preventing the accumulation of backflow cooling liquid on the surface of the distribution plate 5, so that the spray port 51 can smoothly spray the cooling liquid, thereby maintaining high heat exchange efficiency; in addition, in order to realize the unified discharge of the cooling liquid, the flow guide grooves 52 at different positions are connected to the liquid outlet 421 through internal channels.

[0032] Working principle: In order to solve the problem of local hot spots and temperature gradient caused by uneven heat power distribution of high-power semiconductor devices in aging test, and realize "on-demand heat dissipation" of heat in different areas, the specific way is to customize the jet impact and heat transfer enhancement structure in the cooling box 4 according to the heat distribution map of the device to be tested 3, and drive the refrigerant through the circulating pump pressure system to establish a high-intensity convective heat transfer field proportional to the heat flux in the heat area 31, thereby avoiding the local overheating caused by the heat conduction lag of the traditional metal heat sink, and ensuring that the temperature of the low heat area 31 does not be super-amplitude cooled; In order to ensure that the efficiency of the heat dissipation structure is accurately matched with the actual heat characteristics of the device, the specific way is to configure the distribution plate 5 and the column plate 6 according to the power distribution map of the device to be tested 3 before the test starts, the distribution plate 5 establishes a non-uniform pressure and kinetic energy conversion area through the differential spray port 51 distribution; the column plate 6 establishes a non-uniform heat transfer and heat exchange surface through the differential number and length of the column body 61, then the configured distribution plate 5 and column plate 6 are installed in the cooling box 4, and the positioning of the device to be tested 3 on the partition plate 2 is completed; At the beginning of the test, the high-pressure refrigerant is pumped into the high-pressure layer 41 of the cooling box 4 through the circulating tank 7, and the pressure potential energy provided by the pump body in the circulating tank 7 is used. The refrigerant is injected into the refrigeration layer 42 through the spray port 51 of the distribution plate 5 under the action of pressure, forming a high-speed jet impact, and under the action of the differential spray port 51 of the distribution plate 5, a high-speed and high-density jet group is formed in the high-power area of the device to be tested 3, which can strongly impact and wrap the corresponding column body 61, realizing a very high convective heat transfer coefficient. In order to realize continuous and efficient removal of heat and recycling of medium, specifically, the column 61 conducts the non-uniform heat generated by the device under test 3 along a low thermal resistance path to the refrigeration layer 42, and then the heat is taken away by different intensity of jet flushing, realizing the liquid phase transfer of heat; finally, the heat-absorbed refrigerant is discharged to the circulating tank 7 through the liquid outlet 421 for cooling circulation, ensuring the constant temperature of the cooling liquid and maintaining the accuracy of the aging test.

[0033] Although embodiments of the present application have been shown and described, it is to be understood that various modifications, substitutions, replacements and changes can be made to these embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A semiconductor aging test chamber for applying a simulated working environment and monitoring electrical parameters of a device under test, comprising a chamber body and partitions, characterized in that: It also includes a cold box and a distribution plate. The cold box is opposite to the device under test (DUT) mounted on the partition, and the contact area between the cold box and the partition is larger than the contact area between the DUT and the partition. The distribution plate divides the inner cavity of the cold box into a high-pressure layer and a cooling layer. The high-pressure layer is away from the partition relative to the cooling layer, and the high-pressure layer is connected to the refrigerant. The refrigerant is injected into the cooling layer under high pressure through the perforated distribution plate. The number and size of the holes in the distribution plate are adjusted to adapt to the heating power of the corresponding area of ​​the DUT.

2. The semiconductor aging test chamber according to claim 1, characterized in that: In order to dissipate the different amounts of heat from different areas of the device under test in a timely manner, nozzles are provided on the distribution plate. The number of nozzles in a local area of ​​the distribution plate is positively correlated with the heat generation power of the corresponding area of ​​the device under test, and the diameter of the nozzles in a local area of ​​the distribution plate is negatively correlated with the heat generation power of the corresponding area of ​​the device under test.

3. A semiconductor aging test chamber according to claim 1, characterized in that: In order to fully absorb the heat emitted by the device under test, the cooling layer is provided with a column plate, one side of which is attached to a partition, and the other side of which is provided with a protruding column.

4. A semiconductor aging test chamber according to claim 3, characterized in that: In order to control the heat absorption intensity of the columns in different areas, the number and length of the columns in a local area of ​​the column plate are positively correlated with the heat generation power of the corresponding area of ​​the device under test.

5. A semiconductor aging test chamber according to claim 3, characterized in that: To ensure full contact between the column and the coolant, the column has a gradually changing cross-section and a pointed tip that faces the distribution plate.

6. A semiconductor aging test chamber according to claim 3, characterized in that: To accommodate devices under test of different specifications, both the distribution plate and the column plate are detachable and installable. The cold box includes a box body and a box cover, and the box body has grooves for limiting the distribution plate and the column plate.

7. A semiconductor aging test chamber according to claim 5, characterized in that: To allow for the recycling of the column, it is detachably attached to the column plate.

8. A semiconductor aging test chamber according to claim 1, characterized in that: To ensure the circulation of coolant in the high-pressure layer and the cooling layer, the high-pressure layer and the cooling layer are respectively provided with a liquid inlet and a liquid outlet, which are connected to a circulation tank outside the housing.

9. A semiconductor aging test chamber according to claim 8, characterized in that: In order to discharge the coolant from the surface of the distribution plate in a timely manner so that the nozzles can flow smoothly, a guide groove is formed on the surface of the distribution plate located on the cooling layer, and the guide groove is connected to the liquid outlet.

10. A test method applied to the semiconductor aging test chamber according to any one of claims 1 to 9, characterized in that: include: S1. Configure the distribution board and column plate according to the power distribution diagram of the device under test, put the configured distribution board and column plate into the cold box, and then position the device under test on the partition plate. S2. High-pressure refrigerant is pumped into the high-pressure layer of the cold box. Under pressure, the refrigerant is injected into the cold layer through the nozzle of the distribution plate. S3. Through the differentiated nozzles of the distribution plate, a high-velocity, high-density jet stream is formed in the high-power region of the device under test, impacting and enveloping the corresponding column; S4. The column conducts the non-uniform heat generated by the device under test to the cooling layer, and carries away the heat through jets of different intensities. The heat-absorbing refrigerant is discharged through the outlet to the circulation tank for cooling circulation.

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