An irradiation system for improving wafer performance

Abstract

This application relates to an irradiation system for improving wafer performance, belonging to the field of radiation processing technology. The irradiation system for improving wafer performance includes an irradiation source, a first target disk, a scanning irradiation source, and a second target disk. The radiation emitted by the irradiation source can simultaneously cover multiple wafers mounted on the first target disk; the radiation emitted by the scanning irradiation source is concentrated at a single point; the second target disk is used to drive the wafers to move along a spiral trajectory; the wafers are configured such that after being irradiated by the irradiation source on the first target disk, they are transferred to the second target disk, where the second target disk drives the wafers to move, allowing the scanning irradiation source to scan the wafers, thereby improving the irradiation uniformity of the wafers. The irradiation system for improving wafer performance provided in this application can improve irradiation uniformity.

Description

Technical Field

[0001] This application relates to the field of radiation processing technology, and more specifically, to an irradiation system for improving wafer performance. Background Technology

[0002] In advanced semiconductor manufacturing, radiation irradiation technology is often used to modify wafer materials, such as altering the crystal structure, adjusting electrical properties, or optimizing material stress states. Achieving efficient and uniform modification is key to improving device performance and yield.

[0003] Currently, the irradiation systems commonly used in the industry typically consist of an irradiation source and a rotating target disk. The target disk has a multi-layered circular array of wafer mounting positions arranged from the inside out, centered on the axis of the irradiation source, to enable batch modification processing of wafers.

[0004] However, this system, which relies on a single irradiation mode, suffers from insurmountable drawbacks in achieving uniform modification. Due to the natural attenuation of radiation intensity from the center to the edges, and differences in incident angle caused by geometric positions, there is a significant gradient in the radiation dose absorbed by wafers at different radial locations. Specifically, wafers located in the inner ring of the target disk often receive a much higher dose than those in the outer ring. This batch-to-batch inhomogeneity leads to inconsistent modification levels and discrete electrical parameters in wafers processed within the same batch, severely impacting product consistency and yield.

[0005] Furthermore, for a single wafer, different regions may also face the problem of varying modification rates and depths due to the uneven distribution of the aforementioned radiation field, i.e., there is non-uniformity within the wafer, which directly restricts the manufacturing precision of high-end chips.

[0006] Therefore, there is an urgent need in the field for a new irradiation system solution that can fundamentally improve irradiation uniformity, thereby ensuring consistent and reliable wafer modification effects. Summary of the Invention

[0007] The purpose of this application is to provide an irradiation system that improves wafer performance, thereby improving irradiation uniformity and mitigating the aforementioned problems.

[0008] This application is achieved through the following technical solution:

[0009] This application provides an irradiation system for improving wafer performance. The irradiation system includes an irradiation source, a first target disk, a scanning irradiation source, and a second target disk. The radiation emitted by the irradiation source can simultaneously cover multiple wafers mounted on the first target disk. The radiation emitted by the scanning irradiation source is concentrated at a single point. The second target disk is used to drive the wafers to move along a spiral trajectory. The wafers are configured such that after being irradiated by the irradiation source on the first target disk, they are transferred to the second target disk, where the second target disk drives the wafers to move, allowing the scanning irradiation source to scan the wafers, thereby improving the irradiation uniformity of the wafers.

[0010] In the technical solution of this application embodiment, the irradiation uniformity of the wafer is improved by combining the batch processing of the irradiation source and the fine scanning of the scanning source. Intra-batch inhomogeneities (such as high dose in the inner ring and low dose in the outer ring) and intra-wafer inhomogeneities (such as dose differences between the center and edge) that may exist in the initial irradiation stage are effectively offset by the scanning stage. The point-like radiation of the scanning source combined with spiral motion ensures a more uniform distribution of radiation dose received on each wafer surface, thereby making wafer material modifications (such as changes in crystal structure and adjustments to electrical properties) more consistent and reliable, improving the consistency of semiconductor device performance parameters and manufacturing yield.

[0011] In some embodiments, the device further includes a mounting base, a memory, and a control module. The mounting base is used to place the wafer and is equipped with a first sensor for detecting the current radiation levels of different regions of the wafer after irradiation by an irradiation source. The memory is used to store the rated radiation levels of the wafer. The control module is used to adjust the moving speed of the second target disk based on the difference between the current radiation level and the rated radiation level.

[0012] In the technical solution of this application embodiment, the wafer and the first sensor move synchronously with the mounting base, eliminating data misalignment caused by wafer transfer, repositioning, or calibration errors between the first sensors, and ensuring the accuracy of the compensation basis. The wafer may have local micro-regions that receive less radiation due to factors such as surface impurities blocking radiation rays or internal structural inhomogeneity. These regions are low-dose defect areas. The control module can identify these low-dose defect areas based on the difference between the current radiation value of each region of the wafer detected by the first sensor and the rated radiation value. This allows the control module to adaptively adjust the moving speed of the second target disk, so that the point of action of the scanning radiation source stays in these regions for a longer time, thereby compensating for the radiation deficiency in these regions and enabling the wafer to obtain a highly consistent modification effect.

[0013] In some embodiments, the first target disk is provided with a plurality of first mounting ports for mounting a mounting base; the plurality of first mounting ports are arranged in a circular array around the central axis of the irradiation source; the first target disk is configured to be able to rotate around the central axis of the irradiation source to change the incident direction of the radiation rays on the wafer.

[0014] In the technical solution of this application embodiment, since all wafers on the first target disk are in the same geometric position and undergo the same dynamic averaging process during the initial irradiation stage, the initial irradiation dose of the wafers exiting the first target disk is highly consistent. This solves the fundamental problem in the prior art that the dose received by wafers located in the inner circle of the target disk is often much higher than that in the outer circle. Since the difference between wafers after initial irradiation is small, when the control module sets the moving speed parameter for the second target disk, it can mainly compensate for the non-uniformity within a single wafer (such as edge effects or local impurity obstruction) without having to consider the differences between wafers too much, simplifying the control algorithm and improving the compensation efficiency and effect. The single-ring layout avoids the problem of different degrees of deformation that may occur at different radii due to thermal expansion or mechanical deformation in multi-ring target disks in the prior art, making the rotational movement of the first target disk more stable and the positioning more accurate, further ensuring the repeatability of the process.

[0015] In some embodiments, the mounting base includes a turntable and a first driving member; the turntable is used to place a wafer, and the first driving member is used to drive the turntable to rotate about the center of a circle corresponding to a first mounting port.

[0016] In the technical solution of this application embodiment, by introducing the rotation of the mounting base, a dual averaging effect is constructed in conjunction with the revolution of the first target disk. This can eliminate all angle- and direction-related irradiation inhomogeneities within the wafer to the greatest extent possible from a physical mechanism perspective, providing a technical basis for obtaining the highest possible level of wafer-level uniformity. The rotation of the disk can transform the fixed-position dose shadow caused by local surface impurities into a low-level, widely distributed background dose fluctuation, turning its fatal impact on device performance into weak noise. For substrate materials with significantly anisotropic crystal structures (such as certain compound semiconductors), the rotation of the disk can ensure that radiation modification occurs uniformly in all crystal orientations, avoiding performance directionality differences caused by a fixed incident direction, and broadening the process application range of the system.

[0017] In some embodiments, the first target plate is further provided with a second mounting port, the axis of which is located on the central axis of the irradiation source; after the mounting base has been irradiated for a rated time at the first mounting port, it can be transferred to the second mounting port for continued irradiation, and then transferred to the second target plate.

[0018] In the technical solution of this application embodiment, by dynamically changing the position of the mounting base (on which the wafer is placed) from the periphery to the center, the system utilizes the characteristics of different regions of the radiation field: the peripheral region achieves azimuth uniformity through rotation, while the central region provides a high dose rate and better symmetry. The combination of these two factors allows the wafer after initial irradiation to achieve a better balance in terms of both total dose and distribution uniformity. Because the baseline quality of the initial irradiation is high, the range of dose differences that need to be corrected by scan compensation on the second target disk is reduced. This means that the scanning process can be completed faster, or more precise repairs can be performed with lower power, thereby improving the overall throughput and energy efficiency of the system. In traditional irradiation systems, although the region near the central axis of the radiation field has the highest energy density, this core high-energy region is wasted because it cannot accommodate wafers (it is usually occupied by the rotating mechanism or left empty). This scheme places the wafer directly in the energy focal region by setting a second mounting port on the first target disk, centered on the central axis of the irradiation source. This allows the previously idle or wasted highest-intensity radiation energy to be directly used for wafer modification, improving the overall energy utilization efficiency of the irradiation source. Radiation intensity is proportional to the absorbed dose rate. In the region of the second mounting port, the radiation intensity is much higher than in the outer region of the first mounting port. Therefore, the radiation dose received by the wafer per unit time at this location is much higher than at the periphery. As the wafer is transferred from the periphery to the center, the rate of accumulation of total radiation dose is accelerated. This means that to achieve the same target total dose, the total residence time of the wafer on the first target disk can be significantly shortened. This directly translates to a reduction in the processing cycle of a single wafer (the wafer can complete the initial irradiation stage faster and enter the next process) and an increase in the overall system throughput (the first target disk can complete the preliminary processing of more batches of wafers per unit time, improving overall processing efficiency).

[0019] In some embodiments, a transfer mechanism is further included, which includes a first transfer component and a second transfer component; the first transfer component is used to transfer the mounting base from the first mounting port to the second mounting port; and the second transfer component is used to transfer the mounting base from the first target plate to the second target plate.

[0020] In the technical solution of this application embodiment, the first transfer component, as a multi-functional integrated unit, undertakes three major functions: loading, internal station switching, and unloading handover. This avoids the complexity of designing independent robotic arms for each function and simplifies the spatial layout and control system around the first target disk. This design realizes the shortest path principle for wafer flow within the first target disk area. Whether it is loading, station switching, or unloading, it is all completed by components on the same optimal path, eliminating multiple handovers and path planning conflicts, thus optimizing material flow. The first transfer component uniformly handles all interactions with the first target disk, meaning that after the wafer enters the first target disk, it only contacts the first transfer component until it is handed over to the second transfer component. This reduces positioning errors between different fixtures and lowers the potential contamination risk from different mechanical structures, creating a highly stable environment for core process steps.

[0021] In some embodiments, the first transfer component rotates synchronously with the first target disk.

[0022] In the technical solution of this application embodiment, the movement and addressing time of the first transfer component is hidden within the process processing time (i.e., the rotation and irradiation time of the first target disk) by synchronous rotation. This allows the station switching and transfer actions to be completed instantly after signal triggering, thereby improving the system's cycle speed and overall throughput. The design of synchronous rotation between the first transfer component and the first target disk avoids frequent start-stop operations of the first target disk while waiting for the first transfer component to transfer. The uniform and continuous rotational motion of the first target disk is smoother and generates less vibration than frequent acceleration and deceleration motion, which helps to ensure the stability of the irradiation process.

[0023] In some embodiments, a protective cover is also included, the internal space of which constitutes a process cavity; the irradiation source, the scanning source, the first target disk, the second target disk, and the transfer mechanism are all disposed within the process cavity.

[0024] In the technical solution of this application embodiment, the sealed process chamber can passively or actively maintain a high cleanliness environment, effectively preventing particulate matter in the outside air from falling on the wafer surface, thereby avoiding the solidification of contaminants inside the wafer or causing local irradiation blockage during the irradiation process.

[0025] In some embodiments, the mounting base is further provided with a leveling mechanism; the leveling mechanism can cooperate with the inner wall of the first mounting port or the second mounting port to adjust the direction of the central axis of the wafer so that it is parallel to the central axis of the irradiation source.

[0026] In the technical solution of this application embodiment, by instantaneously leveling and locking, the minute deviations in the wafer attitude caused by vibrations during the rotation of the first target disk and the installation and removal of the mounting base are eliminated, ensuring the consistency of the incident angle of the radiation rays from a geometrical perspective. This mechanism completes calibration instantly during installation, without occupying additional process time. It achieves complex precision control through simple mechanical interaction, improving the uniformity of the initial irradiation by the irradiation source and effectively synergizing with the subsequent compensation scanning by the scanning source.

[0027] In some embodiments, the leveling mechanism includes a push ring and a plurality of mating parts; the outer peripheral surface of the mounting base is provided with a third mounting port for the mating parts to move; the plurality of mating parts are arranged in a circular array around the central axis of the wafer; the mating parts are provided with a bevel and an end face on the side facing the push ring, and an arc surface on the side facing the corresponding inner wall; the push ring can move up and down along the central axis of the wafer, so that the contact surface between the push ring and the mating parts can switch between the bevel and the end face; when the push ring contacts the mating part on the bevel, the arc surface contacts or separates from the inner wall; when the push ring contacts the mating part on the end face, the arc surface abuts against the inner wall.

[0028] In the technical solution of this application embodiment, the upward movement of the push ring from a low position to a high position enables controllable switching between two states: easy installation of the mounting base during installation and precise leveling and locking during operation. In the initial installation phase (push ring low position), the mating parts retract radially, reducing installation resistance and wear. In the later installation phase (push ring rising), precise leveling and secure locking are achieved through the inclined plane, resisting vibrations caused by the rotation of the first target disk and ensuring geometric stability during irradiation. This design utilizes simple axial movement to control radial leveling and locking, resulting in a compact structure, reliable operation, and good repeatability.

[0029] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A schematic diagram of the external structure of an irradiation system for improving wafer performance provided in some embodiments of this application;

[0032] Figure 2 Cross-sectional views of irradiation systems for improving wafer performance provided in some embodiments of this application;

[0033] Figure 3 Cross-sectional view of the mounting base provided in some embodiments of this application

[0034] Figure 4 This is a partial structural schematic diagram of the irradiation structure provided in some embodiments of this application;

[0035] Figure 5 This is a partial structural schematic diagram of the irradiation structure provided in some other embodiments of this application;

[0036] Figure 6 Exploded views of the mounting base provided in some embodiments of this application;

[0037] Figure 7 When the push ring contacts the inclined surface of the mating part Figure 2 Enlarged view of point A in the middle;

[0038] Figure 8 When the push ring contacts the end face of the mating part Figure 2 Enlarged view of point A in the middle.

[0039] Icons: 1-Irradiation source; 2-First target plate; 20-First mounting port; 21-Second mounting port; 3-Scanning source; 4-Second target plate; 5-Wafer; 6-Mounting base; 60-First sensor; 61-Third mounting port; 62-Turntable; 63-First drive component; 7-Transfer mechanism; 70-First transfer assembly; 71-Second transfer assembly; 8-Protective cover; 80-Process cavity; 9-Leveling mechanism; 90-Push ring; 91-Matching component. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0041] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in the description of this application is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms "comprising" and "having," and any variations thereof, in the description, claims, and accompanying drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the description, claims, or accompanying drawings of this application are used to distinguish different objects, not to describe a specific order or hierarchy.

[0042] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0043] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "attachment" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0044] In this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, in this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0045] In this application, "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0046] According to some embodiments of this application, optionally, such as Figures 1-2 , Figures 4-5 As shown, this application provides an irradiation system for improving wafer performance. The irradiation system for improving wafer performance includes an irradiation source 1, a first target disk 2, a scanning irradiation source 3, and a second target disk 4. The radiation emitted by the irradiation source 1 can simultaneously cover multiple wafers 5 mounted on the first target disk 2. The radiation emitted by the scanning irradiation source 3 is concentrated at a single point. The second target disk 4 is used to drive the wafers 5 to move along a spiral trajectory. The wafers 5 are configured such that after being irradiated by the irradiation source 1 on the first target disk 2, they are transferred to the second target disk 4, where the second target disk 4 drives the wafers 5 to move, so that the scanning irradiation source 3 scans the wafers 5, thereby improving the irradiation uniformity of the wafers 5.

[0047] Wafer 5 is the basic material for semiconductor manufacturing, usually a circular silicon wafer (other materials such as gallium arsenide can also be used). It is the matrix of the chip, and all subsequent circuits and devices are processed and formed on wafer 5, which is eventually cut into individual chips.

[0048] Radiation irradiation technology is a technique that modifies materials by applying specific types of radiation (such as ion beams, electron beams, gamma rays, etc.) to wafer 5. Its core purpose is to change the microscopic state of the wafer 5 material.

[0049] Radiation dose is an indicator of how much radiation energy a wafer absorbs and is a core control parameter for modification effectiveness. Too low a dose will lead to insufficient modification, while too high a dose may damage the material; therefore, precise control is essential.

[0050] Irradiation source 1 is a common type of radiation source in traditional radiation processing technology. The radiation intensity of irradiation source 1 follows the rule that the intensity decreases with distance. The wafers 5 on the inner ring of the first target disk 2 are closer to the radiation source and receive higher radiation intensity; the wafers 5 on the outer ring are farther away and receive lower radiation intensity.

[0051] In actual operation, multiple wafers 5 are mounted on the first target disk 2. The irradiation source 1 is activated, and the emitted radiation rays simultaneously cover all wafers 5 on the first target disk 2. During this stage, the wafers 5 receive initial batch irradiation. The irradiation source 1 provides broad radiation coverage, but due to the natural attenuation of radiation intensity from the center to the edge, the radiation dose received by wafers 5 at different radial positions may vary. After the initial irradiation is complete, the wafers 5 are removed from the first target disk 2 and loaded onto the second target disk 4. On the second target disk 4, the scanning radiation source 3 is activated, and its emitted radiation rays are concentrated at a single point. Simultaneously, the second target disk 4 drives the wafers 5 along a helical trajectory, causing the surface of the wafers 5 to move relative to the scanning radiation source 3. The scanning radiation source 3 continuously scans the moving wafers 5, covering the entire surface of the wafers 5. Due to the movement of the helical trajectory, each point on each wafer 5 is uniformly irradiated by the scanning radiation source 3, thereby compensating for the non-uniformity of the initial irradiation stage.

[0052] This application improves the irradiation uniformity of wafer 5 by combining the batch processing of irradiated radiation source 1 with the fine scanning of scanning radiation source 3. Intra-batch inhomogeneities (such as high dose to inner wafers 5 and low dose to outer wafers 5) and intra-wafer inhomogeneities (such as dose differences between the center and edge) that may exist in the initial irradiation stage are effectively offset by the scanning stage. The point-like radiation of the scanning radiation source 3 combined with spiral motion ensures a more uniform distribution of radiation dose received on the surface of each wafer 5, thereby making the material modification of wafer 5 (such as changes in crystal structure and adjustments to electrical properties) more consistent and reliable, improving the consistency of performance parameters and manufacturing yield of semiconductor devices.

[0053] Furthermore, with the scanning radiation source 3 as a backup, the irradiation radiation source 1 can enhance its own irradiation intensity, thereby accelerating the irradiation efficiency of the wafer 5 and improving the overall processing efficiency of the wafer 5.

[0054] According to some embodiments of this application, optionally, such as Figures 2-3 , Figures 6-8 As shown, it also includes a mounting base 6, a memory, and a control module. The mounting base 6 is used to place the wafer 5. The mounting base 6 is equipped with a first sensor 60, which is used to detect the current radiation value of different areas of the wafer 5 after being irradiated by the irradiation source 1. The memory is used to store the rated radiation value of the wafer 5. The control module is used to adjust the moving speed of the second target disk 4 according to the difference between the current radiation value and the rated radiation value.

[0055] In practical applications, wafer 5 is placed on a dedicated mounting base 6, which is fixed to the first target disk 2. Subsequently, the irradiation source 1 is activated, irradiating all wafers 5 on the first target disk 2 in batches. As soon as the initial irradiation ends, the first sensor 60 on the mounting base 6 immediately activates, detecting the current radiation dose value of each area on the surface of the wafer 5 it supports. This data is sent to the control module. Then, the entire mounting base 6 (along with the wafers 5 and the first sensor 60) is removed from the first target disk 2 and mounted as a whole onto the second target disk 4. This process ensures that the wafer 5 remains connected to the first sensor 60, which records its irradiation history. On the second target disk 4, the control module retrieves the dose distribution data corresponding to the mounting base 6. While the scanning source 3 scans the wafer 5, the control module dynamically adjusts the moving speed of the second target disk 4 in real time based on the dose difference of the wafer 5, achieving personalized compensated irradiation.

[0056] In this application, the wafer 5 and the first sensor 60 move synchronously with the mounting base 6, eliminating data misalignment caused by wafer 5 transfer, repositioning, or calibration errors between the first sensors 60, thus ensuring the accuracy of the compensation basis. The wafer 5 may have localized micro-regions that receive less radiation due to factors such as surface impurities blocking radiation rays or internal structural inhomogeneities. These regions are low-dose defect areas. The control module can identify these low-dose defect areas based on the difference between the current radiation value of each region of the wafer 5 detected by the first sensor 60 and the rated radiation value. This allows the control module to adaptively adjust the moving speed of the second target disk 4, enabling the scanning radiation source 3 to remain in these regions for a longer period of time, thereby compensating for the radiation deficiency in these regions and achieving a highly consistent modification effect on the wafer 5.

[0057] In practice, the control module can not only adjust the moving speed of the second target disk 4 according to the difference, but also coordinate the adjustment of the radiation intensity of the scanning radiation source 3 to achieve dual modulation of speed and intensity, so as to achieve a more precise compensation effect.

[0058] According to some embodiments of this application, optionally, such as Figure 2 and Figure 5As shown, the first target disk 2 is provided with a plurality of first mounting ports 20 for mounting the mounting base 6; the plurality of first mounting ports 20 are arranged in a circular array around the central axis of the irradiation source 1; the first target disk 2 is configured to be able to rotate around the central axis of the irradiation source 1 to change the incident direction of the radiation rays on the wafer 5.

[0059] In practical applications, all wafers 5 are mounted on the same circumference of the first target disk 2 via mounting bases 6. This arrangement ensures that, in a static state, each wafer 5 is at the same distance from the irradiation source 1 and has the same initial geometric angle. After the irradiation source 1 is activated, the first target disk 2 begins to rotate uniformly around its axis. The purpose of this rotation is to eliminate azimuth inhomogeneity (even if the radiation field itself has a small azimuth intensity distribution inhomogeneity, rotation ensures that each wafer 5 receives equal irradiation at all azimuth angles, thus homogenizing this systematic error) and to average the incident direction (rotation continuously changes the incident direction of the radiation rays on the wafer 5, which can average out the anisotropic modification effects related to the crystal orientation or microstructure of the wafer 5 that may be caused by a fixed incident angle, thereby improving the modification uniformity within a single wafer 5).

[0060] Since all wafers 5 on the first target disk 2 are in the same geometric position and undergo the same dynamic averaging process during the initial irradiation stage, the initial irradiation dose of wafers 5 exiting the first target disk 2 is highly consistent. This solves the fundamental problem in the prior art where wafers 5 located in the inner ring of the target disk often receive a much higher dose than those in the outer ring. Because the differences between wafers 5 after initial irradiation are small, the control module can primarily compensate for non-uniformities (such as edge effects or local impurity obstruction) within a single wafer 5 when setting the moving speed parameters for the second target disk 4, without needing to consider the differences between wafers 5 excessively. This simplifies the control algorithm and improves compensation efficiency and effectiveness. The single-ring layout avoids the problem of varying degrees of deformation that may occur at different radii due to thermal expansion or mechanical deformation in multi-ring target disks in the prior art, making the rotational movement of the first target disk 2 more stable and the positioning more precise, further ensuring the repeatability of the process.

[0061] According to some embodiments of this application, optionally, such as Figure 3 , Figures 6-8 As shown, the mounting base 6 includes a turntable 62 and a first driving member 63; the turntable 62 is used to place the wafer 5, and the first driving member 63 is used to drive the turntable 62 to rotate around the center of the corresponding first mounting port 20.

[0062] In practical applications, after the mounting base 6 is installed on the first mounting port 20 of the first target disk 2, its turntable 62 is used to place the wafer 5. During the initial irradiation stage, the mounting base 6 simultaneously performs two rotational movements: revolution (the entire first target disk 2 rotates around the central axis of the irradiation source 1) and rotation (the first driving component 63 of each mounting base 6 drives its turntable 62 to rotate around the center of the corresponding first mounting port 20 (i.e., the central axis of the wafer 5 itself)). This combined revolution and rotation motion mode averages the radiation incident radiation in two dimensions. The revolution solves the systematic non-uniformity in the azimuth direction of the radiation field, while the rotation targets the individual wafer 5 itself, eliminating irradiation non-uniformity related to a fixed azimuth caused by the microscopic unevenness of the wafer 5, local shading of surface impurities, or anisotropy inherent in the material itself. For example, a fixed impurity shadow will be moved across the entire circumference during the rotation, thereby minimizing its dose impact on a single point.

[0063] By introducing the rotation of mounting base 6, which synergizes with the revolution of the first target disk 2, a dual averaging effect is constructed. This physically eliminates all angle- and direction-related irradiation inhomogeneities within wafer 5, providing a technical basis for achieving the highest possible level of uniformity within wafer 5. The rotation of disk 62 transforms the fixed-position dose shadowing caused by local surface impurities into a low-level, widely distributed background dose fluctuation, turning its fatal impact on device performance into weak noise. For substrate materials with significantly anisotropic crystal structures (such as certain compound semiconductors), the rotation of disk 62 ensures that radiation modification occurs uniformly in all crystal orientations, avoiding performance directionality differences caused by a fixed incident direction and broadening the system's process application range.

[0064] According to some embodiments of this application, optionally, such as Figure 2 and Figure 5 As shown, the first target plate 2 is also provided with a second mounting port 21, the axis of which is located on the central axis of the irradiation source 1; after the mounting base 6 has been irradiated for the rated time on the first mounting port 20, it can be transferred to the second mounting port 21 for continued irradiation, and then transferred to the second target plate 4.

[0065] In practical applications, the mounting base 6 (carrying the wafer 5) is first installed on the first mounting port 20. The first target disk 2 rotates, the irradiation source 1 is activated, and the wafer 5 receives the first stage of irradiation in dynamic averaging mode until a preset rated time is reached (e.g., 70% of the target total dose is achieved). Subsequently, the mounting base 6 is removed from the first mounting port 20, transferred to the second mounting port 21, and fixed. Since the second mounting port 21 is located on the central axis, the wafer 5 is now in the core region of the radiation field. The radiation intensity in the central region is usually the highest. Continuing irradiation at this position can effectively increase the total radiation dose accumulated by the wafer 5 previously located on the periphery, ensuring that it quickly reaches the preset level. The radiation field in the central region has unique distribution characteristics (e.g., a more perpendicular incident angle and better symmetry). Irradiation here helps to repair any small angle-related inhomogeneities that may still exist after the first step of dynamic irradiation, injecting a highly symmetrical dose distribution into the wafer 5. After completing the central irradiation, the mounting base 6 is transferred to the second target disk 4. At this point, the current radiation value detected by the first sensor 60 is the result of two optimizations: one for the peripheral dynamics and one for the central statics, resulting in improved overall uniformity. Based on this, the control module makes a final fine adjustment to the moving speed of the second target disk 4 to eliminate any residual, random local unevenness.

[0066] By dynamically changing the position of the mounting base 6 (containing the wafer 5) from the periphery to the center, the system utilizes the characteristics of different regions of the radiation field: the peripheral region achieves azimuth homogenization through rotation, while the central region provides a high dose rate and better symmetry. This combination results in a better balance between total dose and uniformity of distribution for the wafer 5 after initial irradiation. Due to the high baseline quality of the initial irradiation, the dose difference range that needs to be corrected by scan compensation on the second target disk 4 is reduced. This means that the scanning process can be completed faster, or more precise repairs can be performed with lower power, thereby improving the overall system throughput and energy efficiency. In traditional irradiation systems, although the region near the central axis of the radiation field has the highest energy density, this core high-energy region is wasted because it cannot accommodate the wafer 5 (it is usually occupied by the rotating mechanism or left empty). This scheme places the wafer 5 directly in the energy focal region by setting a second mounting port 21 on the first target disk 2, with its axis located on the central axis of the irradiation source 1. This allows the previously idle or wasted highest-intensity radiation energy to be directly used for wafer 5 modification, improving the overall energy utilization efficiency of the irradiation source 1. Radiation intensity is proportional to the absorbed dose rate. In the region of the second mounting port 21, the radiation intensity is much higher than in the outer region of the first mounting port 20. Therefore, the radiation dose received by the wafer 5 per unit time at this location is much higher than that at the periphery. When the wafer 5 is transferred from the periphery to the center, the rate of accumulation of its total radiation dose is accelerated. This means that in order to achieve the same target total dose, the total residence time of the wafer 5 on the first target disk 2 can be significantly shortened. This directly translates to a reduction in the processing cycle of a single wafer 5 (the wafer 5 can complete the initial irradiation stage faster and enter the next process) and an increase in the overall throughput of the system (the first target disk 2 can complete the preliminary processing of more batches of wafers 5 per unit time, thus improving the overall processing efficiency).

[0067] According to some embodiments of this application, optionally, such as Figure 2 , Figures 4-5 As shown, it also includes a transfer mechanism 7, which includes a first transfer component 70 and a second transfer component 71; the first transfer component 70 is used to transfer the mounting base 6 from the first mounting port 20 to the second mounting port 21; the second transfer component 71 is used to transfer the mounting base 6 from the first target plate 2 to the second target plate 4.

[0068] In practical applications, when other transfer equipment (such as workshop overhead cranes or loading robots) delivers the mounting base 6 to the area of ​​the first target plate 2, the first transfer component 70 receives the mounting base 6 and installs it onto the first mounting port 20, ready to receive the first stage of dynamic irradiation. After the mounting base 6 has been irradiated for the rated time at the first mounting port 20, the first transfer component 70 moves again, removing the mounting base 6 from the first mounting port 20 and transferring it to the second mounting port 21 for the second stage of central irradiation. After central irradiation is completed, the first transfer component 70 removes the mounting base 6 from the second mounting port 21 and then smoothly places it onto the receiving end of the second transfer component 71. Upon receiving the mounting base 6, the second transfer component 71 undertakes the task of transporting it across process modules, ultimately placing it onto the second target plate 4 for final scan compensation irradiation.

[0069] The first transfer component 70, as a multi-functional integrated unit, undertakes three major functions: loading, internal station switching, and unloading. This avoids the complexity of designing independent robotic arms for each function and simplifies the spatial layout and control system around the first target tray 2. This design achieves the shortest path principle for wafer 5 flow within the area of ​​the first target tray 2. Whether loading, station switching, or unloading, all are completed by components on the same optimal path, eliminating multiple handovers and path planning conflicts, thus optimizing material flow. Since the first transfer component 70 handles all interactions with the first target tray 2, it means that after entering the first target tray 2, the wafer 5 only contacts the first transfer component 70 until it is handed over to the second transfer component 71. This reduces positioning errors between different fixtures and lowers the potential contamination risk from different mechanical structures, creating a highly stable environment for core process steps.

[0070] According to some embodiments of this application, optionally, the first transfer component 70 rotates synchronously with the first target disk 2.

[0071] In practical applications, during the irradiation process of the first target disk 2, the first transfer component 70 does not remain stationary but rotates synchronously with it. There is no relative angular displacement between the two. In this synchronous rotation state, the first transfer component 70 can perform a series of preparatory tasks, such as: its end effector can move in advance and position itself above or near the mounting base 6 (whether it is the first mounting port 20 or the second mounting port 21) to be picked up. When the first target disk 2 reaches a certain preset phase, since the first transfer component 70 is already in a preparatory state with zero relative angular displacement with the target mounting base 6, it can immediately perform gripping, releasing, or transfer actions. This eliminates the time required for the first transfer component 70 to start, address, and position itself from a stationary state after the first target disk 2 stops.

[0072] By rotating synchronously, the movement and addressing time of the first transfer component 70 is hidden within the process time (i.e., the rotation and irradiation time of the first target disk 2). This allows station switching and transfer actions to be completed instantaneously after signal triggering, thereby improving the system's cycle speed and overall throughput. The design of synchronous rotation between the first transfer component 70 and the first target disk 2 avoids frequent start-stop cycles of the first target disk 2 while waiting for the first transfer component 70 to transfer. The uniform and continuous rotation of the first target disk 2 is smoother and generates less vibration than frequent acceleration and deceleration, which helps ensure the stability of the irradiation process.

[0073] According to some embodiments of this application, optionally, such as Figures 1-2 As shown, it also includes a protective cover 8, the internal space of which constitutes a process cavity 80; the irradiation source 1, the scanning source 3, the first target disk 2, the second target disk 4, and the transfer mechanism 7 are all disposed in the process cavity 80.

[0074] In practical applications, all irradiation processing and wafer 5 transfer operations are completed within the process cavity 80 formed by the protective shield 8. The wafer 5 is fed in and taken out through a dedicated transfer port, ensuring that the internal environment of the process cavity 80 is isolated from the external environment.

[0075] The sealed process chamber 80 can passively or actively maintain a high level of cleanliness, effectively preventing particulate matter in the outside air from falling onto the surface of the wafer 5, thereby avoiding the solidification of contaminants inside the wafer 5 or causing local irradiation blockage during the irradiation process.

[0076] According to some embodiments of this application, optionally, such as Figure 3 , Figures 6-8 As shown, the mounting base 6 is also provided with a leveling mechanism 9; the leveling mechanism 9 can cooperate with the inner wall of the first mounting port 20 or the second mounting port 21 to adjust the direction of the central axis of the wafer 5 so that it is parallel to the central axis of the irradiation source 1.

[0077] In actual operation, the high-speed rotation and start-up of the first target disk 2, and the gripping and placing actions of the first transfer component 70 on the mounting base 6, are significant sources of vibration. These vibrations accumulate and are sufficient to cause the mounting base 6 to shift or tilt within the first mounting port 20 or the second mounting port 21. To address this issue, the mounting base 6 of this application is equipped with a leveling mechanism 9. When the mounting base 6 is placed and fixed to the first mounting port 20 or the second mounting port 21 by the first transfer component 70, the leveling mechanism 9 contacts the inner wall of the corresponding mounting port. Under the action of the contact force, the leveling mechanism 9 automatically adjusts the bearing plane of the wafer 5 on the mounting base 6, making the central axis of the wafer 5 parallel to the central axis of the irradiation source 1.

[0078] By instantaneously leveling and locking, the minute deviations in the wafer 5's orientation caused by vibrations during the rotation of the first target disk 2 and the installation and removal of the mounting base 6 are eliminated, ensuring the consistency of the incident angle of the radiation rays from a geometrical perspective. This mechanism completes calibration instantly during installation, without consuming additional process time. It achieves complex precision control through simple mechanical interaction, enhancing the uniformity of the initial irradiation by the irradiation source 1 and effectively synergizing with the subsequent compensating scan by the scanning source 3.

[0079] According to some embodiments of this application, optionally, such as Figure 3 , Figures 6-8 As shown, the leveling mechanism 9 includes a push ring 90 and multiple mating parts 91; the outer peripheral surface of the mounting base 6 is provided with a third mounting port 61 for the mating parts 91 to move; the multiple mating parts 91 are arranged in a circular array around the central axis of the wafer 5; the mating parts 91 have a bevel and an end face on the side facing the push ring 90, and an arc surface on the side facing the corresponding inner wall; the push ring 90 can move up and down along the central axis of the wafer 5, so that the contact surface between it and the mating parts 91 switches between the bevel and the end face; when the push ring 90 contacts the mating parts 91 on the bevel, the arc surface contacts or separates from the inner wall; when the push ring 90 contacts the mating parts 91 on the end face, the arc surface abuts against the inner wall.

[0080] In practical applications, when the mounting base 6 needs to be inserted into the first mounting port 20 or the second mounting port 21, the push ring 90 is in a low position, contacting the mating part 91 on the inclined surface. At this time, the arc surface of the mating part 91 is in a radially retracted state, separated from or slightly in contact with the inner wall of the mounting port, providing guidance and reducing resistance for the insertion of the mounting base 6. After the mounting base 6 is placed in the mounting port, the push ring 90 is controlled to rise along the central axis of the wafer 5. During the rising process, the contact surface between the push ring 90 and the mating part 91 gradually switches from the inclined surface to the end face. Guided and pushed by the inclined surface, the mating part 91 is radially pushed outward, so that its arc surface is fully abutted against the inner wall of the first mounting port 20 or the second mounting port 21. Multiple circumferentially distributed mating parts 91 move synchronously, jointly correcting and locking the posture of the mounting base 6, ensuring that the central axis of the wafer 5 is parallel to the central axis of the irradiation source 1.

[0081] This application achieves controllable switching between two states: easy installation of the mounting base 6 during installation and precise leveling and locking during operation, through the upward movement of the push ring 90 from a low position to a high position. In the initial installation phase (push ring 90 in the low position), the mating part 91 retracts radially, reducing installation resistance and wear. In the later installation phase (push ring 90 rising), precise leveling and secure locking are achieved through the inclined plane, resisting vibrations caused by the rotation of the first target disk 2 and ensuring geometric stability during irradiation. This design utilizes simple axial movement to control radial leveling and locking, resulting in a compact structure, reliable operation, and good repeatability.

[0082] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. An irradiation system for improving wafer performance, characterized in that, include: An irradiation source and a first target disk, wherein the radiation emitted by the irradiation source can simultaneously cover multiple wafers mounted on the first target disk; A scanning radiation source and a second target disk, wherein the radiation emitted by the scanning radiation source is concentrated at a point, and the second target disk is used to drive the wafer to move along a spiral trajectory; The wafer is configured to be transferred to the second target disk after being irradiated by the irradiation source in the first target disk, and the second target disk drives the wafer to move so that the scanning irradiation source scans the wafer, thereby improving the irradiation uniformity of the wafer. A mounting base is provided for placing the wafer. The mounting base is equipped with a first sensor for detecting the current radiation levels of different regions of the wafer after irradiation by the irradiation source. A memory for storing the rated radiation value of the wafer; The control module is used to adjust the moving speed of the second target disk based on the difference between the current radiation value and the rated radiation value.

2. The irradiation system for improving wafer performance according to claim 1, characterized in that, The first target plate is provided with a plurality of first mounting ports for mounting the mounting base; Multiple first mounting ports are arranged in a circular array around the central axis of the irradiated radiation source; The first target disk is configured to rotate about the central axis of the irradiated radiation source to change the incident direction of the radiation rays on the wafer.

3. The irradiation system for improving wafer performance according to claim 2, characterized in that, The mounting base includes a turntable and a first driving component; The turntable is used to place the wafer, and the first driving member is used to drive the turntable to rotate around the center of the circle corresponding to the first mounting port.

4. The irradiation system for improving wafer performance according to claim 2, characterized in that, The first target disk is also provided with a second mounting port, the axis of which is located on the central axis of the irradiated radiation source; After the mounting base has been irradiated in the first mounting port for the rated time, it can be transferred to the second mounting port for continued irradiation, and then transferred to the second target plate.

5. The irradiation system for improving wafer performance according to claim 4, characterized in that, Also includes: The transfer mechanism includes a first transfer component and a second transfer component; The first transfer component is used to transfer the mounting base from the first mounting port to the second mounting port; The second transfer component is used to transfer the mounting base from the first target plate to the second target plate.

6. The irradiation system for improving wafer performance according to claim 5, characterized in that, The first transfer component rotates synchronously with the first target disk.

7. The irradiation system for improving wafer performance according to claim 5, characterized in that, Also includes: The protective cover has an internal space that forms a process cavity; The irradiation source, the scanning source, the first target disk, the second target disk, and the transfer mechanism are all disposed within the process cavity.

8. The irradiation system for improving wafer performance according to claim 5, characterized in that, The mounting base is also provided with a leveling mechanism; The leveling mechanism can cooperate with the inner wall of the first or second mounting port to adjust the direction of the central axis of the wafer so that it is parallel to the central axis of the irradiated radiation source.

9. An irradiation system for improving wafer performance according to claim 8, characterized in that, The leveling mechanism includes a push ring and multiple mating parts; The outer peripheral surface of the mounting base is provided with a third mounting port for the mating component to move; Multiple mating components are arranged in a circumferential array around the central axis of the wafer; The mating component has an inclined surface and an end face on the side facing the push ring, and an arc surface on the side facing the corresponding inner wall; The push ring can move up and down along the central axis of the wafer, so that the contact surface between it and the mating part can switch between the inclined surface and the end face; When the push ring contacts the mating part on the inclined surface, the arc surface contacts or separates from the inner wall; When the push ring contacts the mating part at the end face, the arc surface abuts against the inner wall.

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