Ion implantation device

Abstract

The invention provides an ion implantation apparatus which is provided with a radiation thermometer in a processing chamber and can accurately measure the temperature of a wafer in implantation processing. An ion implantation device (IM, IM2) is provided with: a processing chamber (1); a wafer conveyance mechanism (E) that linearly reciprocates the wafer (W) in the processing chamber (1) across a first non-irradiation region (R1), an irradiation region (R3), and a second non-irradiation region (R2) of the ion beam (IB); a case (2) disposed in either the first non-irradiation region (R1) or the second non-irradiation region (R2); a radiation thermometer (3) disposed in the atmospheric pressure space inside the housing (2); and a window (4) which is mounted on the case (2) and through which the infrared rays emitted from the wafer (W) pass.

Description

TECHNICAL FIELD

[0001] The present application relates to an ion implantation apparatus that measures a wafer temperature in a wafer processing using a radiation thermometer. BACKGROUND

[0002] In an ion implantation processing, a wafer is supported by a platen in a predetermined posture. A refrigerant flow path for suppressing a temperature rise of the wafer is provided on the platen. In the ion implantation processing, the temperature of the wafer rises by irradiating the wafer with an ion beam, but if the cooling capacity of the platen is high, the temperature rise of the wafer can be suppressed, and the temperature of the wafer can be maintained constant.

[0003] However, depending on the beam current of the ion beam used in the processing of the wafer, the cooling capacity of the platen, the temperature rise of the wafer can also occur in the processing of the wafer. In order to monitor such a temperature rise of the wafer, the technology of Patent Literature 1 is proposed.

[0004] In Patent Literature 1, an observation port is provided on the wall of an implantation chamber (processing chamber), and the temperature measurement of the wafer is performed from the outside of the implantation chamber using a radiation thermometer. PRIOR ART DOCUMENTS

[0005] Patent Literature 1: Japanese Patent Publication No. 2010-44886

[0006] The farther the distance from the measurement object, the larger the spot diameter of the radiation thermometer. If an object other than the measurement object enters the spot diameter, the radiation thermometer cannot accurately perform the measurement. The processing chamber is provided with a wafer transport mechanism, a beam current measurer, and the like, and thus these components can possibly enter the spot diameter of the radiation thermometer.

[0007] For the above reasons, it is preferable to make the distance of the radiation thermometer from the measurement object close in order to perform accurate temperature measurement using the radiation thermometer. The radiation thermometer has low heat resistance, and is easily affected by the use environment. In order to perform high-precision measurement, it is necessary to maintain the use environment constant. Therefore, as in Patent Literature 1, a structure in which the radiation thermometer is arranged outside the processing chamber is adopted. However, the distance of the wall surface of the processing chamber from the wafer as the measurement object is far, and it is difficult to perform accurate temperature measurement using the radiation thermometer. SUMMARY

[0008] In the present application, the main object is to accurately measure the temperature of the wafer in the implantation processing by arranging the radiation thermometer in the processing chamber.

[0009] The ion implantation apparatus includes: a processing chamber; A wafer conveying mechanism moves the wafer linearly to and fro in the processing chamber through a first non-irradiation region, an irradiation region, and a second non-irradiation region of the ion beam; A box is arranged in either of the first non-irradiation region and the second non-irradiation region; A radiation thermometer is arranged in a space of atmospheric pressure inside the box; and A window is attached to the box to allow infrared rays emitted from the wafer to pass therethrough.

[0010] By providing a space of atmospheric pressure inside the box arranged in the processing chamber and arranging the radiation thermometer in the space, the use environment of the radiation thermometer in the processing chamber can be made constant. Thus, the radiation thermometer can be arranged in the processing chamber for use. By arranging the radiation thermometer in the processing chamber, the radiation thermometer can be arranged in the vicinity of the wafer. As a result, the temperature of the wafer during implantation processing can be accurately measured.

[0011] In order to make it easy to measure the temperature of a specific position of the wafer, it is preferable that The box is opposed to the wafer at a turnaround position of the wafer to and fro.

[0012] In order to achieve cost reduction based on common use of components, it is preferable that A neutralizer is further provided to neutralize the electric charge of the wafer, and a support frame is provided to support the neutralizer, The support frame functions as the box.

[0013] In a structure in which the neutralizer is provided with a permanent magnet for generating a magnetic field, it is preferable that The neutralizer is provided with a permanent magnet, The support frame is provided with a cooling plate having an opening at a position corresponding to the window.

[0014] On the basis of easy implementation of various feedback controls, it is preferable that The wafer replacement and the temperature measurement of the wafer using the radiation thermometer are performed in the same non-irradiation region.

[0015] In order to suppress contamination of the window, it is preferable that A shielding member capable of opening and closing a path between the window and the wafer is provided on the path.

[0016] In order to suppress contamination of the window, it is preferable that The box is provided with a protruding portion arranged on the irradiation region side more than a position at which the window is arranged and protruding more to the traveling direction of the ion beam in the processing chamber than the window.

[0017] By providing a space of atmospheric pressure inside the box arranged in the processing chamber, and arranging the radiation thermometer in the space, the use environment of the radiation thermometer in the processing chamber can be made constant. Thus, the radiation thermometer can be arranged in the processing chamber to be used. By arranging the radiation thermometer in the processing chamber, the radiation thermometer can be arranged in the vicinity of the wafer. As a result, the temperature of the wafer in the implantation process can be accurately measured. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic plan view showing the periphery of a processing chamber of an ion implantation apparatus. Figure 2 is an explanatory view of a temperature measurement position. Figure 3 is a schematic plan view of an ion implantation apparatus provided with a neutralizer. Figure 4 is a schematic plan view of an ion implantation apparatus provided with a neutralizer. Figure 5 is a schematic plan view of an ion implantation apparatus provided with a neutralizer. Figure 6 is a schematic plan view of an ion implantation apparatus provided with a shielding member. Figure 7 is an explanatory view of the operation of a shielding member. Figure 8 is an explanatory view of the operation of a shielding member. Figure 9 is a schematic plan view showing the periphery of a processing chamber of another ion implantation apparatus. Figure 10 is an explanatory view of a protruding portion. Figure 11 is an explanatory view of a mounting structure of a window. DETAILED DESCRIPTION

[0019] Figure 1 is a schematic plan view showing the periphery of a processing chamber of an ion implantation apparatus IM. The Z-axis direction is the direction of travel of the ion beam IB to be delivered to the processing chamber 1. The X-axis direction and the Y-axis direction are directions orthogonal to each other and the Z-axis direction.

[0020] In the ion implantation apparatus IM shown in Figure 1 , an ion beam line not shown is connected to the left side of the processing chamber 1. The ion beam IB is scanned in a direction parallel to the X-axis direction by a magnetic field or an electric field during delivery in the ion beam line. The ion beam IB scanned in the direction parallel to the X-axis direction is deflected by a collimator magnet arranged in the ion beam line. The collimator magnet deflects the ion beam IB at each position in the X-axis direction, and shapes it into an ion beam IB parallel to the Z-axis direction.

[0021] In the processing chamber 1, the wafer W is supported by the stage 5. The stage 5 has an electrostatic chuck or a mechanical chuck or both. In addition, the stage 5 can also have a cooling plate or a heater, having a temperature adjustment function of the wafer W. Further, in order to improve the cooling efficiency or the heating efficiency of the wafer W, a structure in which a gas is enclosed between the wafer W and the stage 5 can also be employed.

[0022] The drive shaft 6 is connected to the stage 5. The drive shaft 6 is reciprocated in a direction parallel to the Y-axis direction by a drive source 7 disposed outside the processing chamber 1. In conjunction with the movement of the drive shaft 6, the wafer W is also reciprocated in a direction parallel to the Y-axis direction. In Figure 1 In the structure example of the wafer transport mechanism E that reciprocates the wafer W, the drive shaft 6 and the drive source 7 are included, but other structures known in the past can also be used.

[0023] In the implementation of the ion implantation process, the wafer W is moved in the first non-irradiation region Rl, the irradiation region R3, and the second non-irradiation region R2. When the wafer W is moved in the first non-irradiation region Rl and the second non-irradiation region R2, the ion beam IB does not irradiate the wafer W. If a portion of the wafer W enters the irradiation region R3, the ion beam IB irradiates the wafer W, and the ion implantation process to the wafer W is implemented.

[0024] At the end of the first non-irradiation region Rl and the second non-irradiation region R2, the moving direction of the wafer W is reversed. The end of each non-irradiation region Rl, R2 in which the moving direction of the wafer W is reversed is the end on the opposite side to the irradiation region R3. If the leading end of the wafer W reaches this end, the wafer W is moved in the direction opposite to the direction moved so far. The position at which the moving direction of the wafer W is reversed is called a turnaround position. In the ion implantation process, the wafer W is repeatedly moved in the first non-irradiation region Rl, the irradiation region R3, and the second non-irradiation region R2 until a predetermined amount of ions is implanted on the wafer W.

[0025] When the wafer W on the stage 5 is replaced, the stage 5 is moved downward in the drawing. Replacing the wafer W means disposing an unprocessed wafer W to the stage 5 or recovering a processed wafer W from the stage 5. After the stage 5 is moved downward, the posture of the stage 5 is changed to horizontal by a tilting mechanism not shown. When the posture of the stage 5 is horizontal, a support surface that supports the wafer W as the upper surface of the stage 5 is parallel to the ZX plane.

[0026] A load lock chamber not shown is connected to the right side of the processing chamber 1 via a valve V. When the posture of the stage 5 is horizontal, the valve V of the processing chamber 1 is opened, and the transport of the wafer W between the load lock chamber is implemented. In the transport of the wafer W, for example, a vacuum robot not shown disposed in the processing chamber 1 is used.

[0027] A chamber 2 having an internal space A is provided in the processing chamber 1. The internal space A is a closed space, and the pressure thereof is a pressure equivalent to the atmospheric pressure. A radiation thermometer 3 is arranged in the internal space A of the chamber 2. A window 4 for transmitting infrared rays is indirectly or directly attached to the wall surface of the chamber 2. The window 4 is made of, for example, germanium or barium fluoride.

[0028] In Figure 1 , the wafer W is located at a turnaround position of the second non-irradiation region R2. The radiation thermometer 3 and the wafer W are opposed in the Z-axis direction. The radiation thermometer 3 detects infrared rays emitted from the wafer W, and measures the temperature of the wafer W in the implantation process. The measured temperature data S1 is sent to a control device C. The control device C has a memory for storing data and a processing circuit for calculating data. The processing circuit includes a processor, a central processing device, a microprocessor, a microcontroller, and / or a hardware control logic.

[0029] The control device C receiving the temperature data S1 outputs a signal S2 for implementing feedback control of each part. A specific example of the feedback control will be described. If the temperature of the wafer W is higher than a reference temperature, the implantation process is temporarily stopped. At this time, the stage 5 stops its movement and stays in the second non-irradiation region R2. The ion beam IB maintains the irradiation state. Thereafter, the temperature measurement of the wafer W is continued, and at the stage where the temperature becomes lower than the reference temperature, the transport of the wafer W is started again. The reference temperature is stored in advance in the memory of the control device C. The feedback control and the comparison of the measured temperature with the reference temperature are implemented by the control device C. In the above feedback control, instead of maintaining the irradiation of the ion beam IB at the time of temporarily stopping the implantation process, the beam optical elements of the electrostatic or magnetic field arranged in the ion beam line can be controlled to deflect the ion beam IB so as not to be transported to the processing chamber 1. Further, the extraction of the ion beam in the ion source can be stopped. When the transport of the wafer W is started again, in the case where the transport of the ion beam IB to the processing chamber 1 is stopped, the ion beam IB is transported to the processing chamber 1 in advance, so as to become a state where the implantation process can be implemented.

[0030] In the case where the stage 5 has a temperature adjustment function of the wafer W, the temperature adjustment function can be utilized to adjust the temperature of the wafer W to be lower than the reference temperature. In this case, if the time required for the temperature adjustment of the wafer W is lower than the time required for the movement of the wafer W from the second non-irradiation region R2 to the irradiation region R3, the transport of the wafer W can be continued. On the other hand, if the time required for temperature adjustment of wafer W exceeds the time required for wafer W to move from the second non-irradiated area R2 to the irradiated area R3, the transport of wafer W is temporarily stopped in the second non-irradiated area R2, and the wafer W is left in standby until its temperature becomes below the reference temperature.

[0031] As described above, by setting an internal space A with atmospheric pressure inside the housing 2 and arranging a radiation thermometer 3 in that space, the operating environment of the radiation thermometer in the processing chamber 1 can be kept constant. Therefore, the radiation thermometer 3 can be positioned near the wafer W, thereby enabling accurate measurement of the temperature of the wafer during the implantation process.

[0032] Inside the processing chamber 1, there is a wafer transport mechanism E and a beam current measuring device. The range of the beam diameter of the radiation thermometer 3 is expanded according to the distance between the radiation thermometer 3 and the wafer W. Previously, the radiation thermometer 3 was placed outside the processing chamber 1, resulting in a large distance between the radiation thermometer 3 and the wafer W, and a wide range of beam diameter. In this case, when measuring the wafer temperature using the radiation thermometer 3, the configuration and structure of the wafer transport mechanism E and the beam current meter needed to be designed so that they were located outside the wide beam diameter range. This was the main reason for the significant reduction in the design freedom of these components. However, in the above embodiment, the radiation thermometer 3 can be placed inside the processing chamber 1, thus the distance between the radiation thermometer 3 and the wafer W is closer than before. As a result, the design freedom of other components, such as the wafer transport mechanism E and the beam current measuring device, which are placed inside the processing chamber 1, is significantly reduced.

[0033] Temperature measurement of wafer W does not necessarily have to be performed at the foldback location of wafer W. For example, as Figure 2 As shown, temperature measurement of the wafer W can also be performed using a radiation thermometer 3 while the wafer W is moving in the second non-irradiated region R2. Midway through its movement within the second non-irradiated region R2, the wafer W moves at a certain speed. At this point, it becomes difficult to fix the position of the wafer W at which the temperature measurement is being performed. The wafer W exhibits an in-plane temperature distribution. If the measurement point is not fixed, the measured temperature may vary significantly with each measurement due to the temperature difference arising from its position. If this is taken into account, then as Figure 1 As shown, it is preferable to perform temperature measurement of wafer W at the fold-back position. At the fold-back position, since the transport speed of wafer W is slower, it becomes easier to perform temperature measurement at a specific location within the wafer surface.

[0034] In the ion implantation process, an ion beam IB having a positive charge is used. As the ion implantation time elapses, the main surface of the wafer W irradiated with the ion beam IB becomes positively charged. The charging of the wafer W becomes a cause of damage to the semiconductor elements formed on the wafer W. In order to prevent the damage to the semiconductor elements caused by such charging, a neutralizer for neutralizing the charge of the charged wafer W is provided in the processing chamber 1.

[0035] In Figure 3 , an ion implantation apparatus IM provided with a neutralizer N is depicted. In general, in an ion implantation apparatus, a high-frequency type of flood type plasma gun or an electron source is used as the neutralizer N. Figure 3 The neutralizer N depicted in is a high-frequency type of flood type plasma gun. The neutralizer N generates plasma P from a rare gas typified by argon or xenon by high-frequency discharge, and supplies low-energy electrons contained in the plasma P to the wafer W. By such electron supply, the charged wafer W is neutralized. When the plasma P is supplied to the wafer W, a magnetic field toward the wafer W side can also be generated by a permanent magnet M, and the supply efficiency of the plasma P to the wafer W is improved.

[0036] Figure 1 The neutralizer N is supported by a support frame 8 to the wall surface of the processing chamber 1. The support frame 8 functions as the box body 2 described in Figure 2 . The position of the neutralizer N from which the plasma P is emitted is exposed to the inside of the processing chamber 1. An electric wiring is connected to the position on the inside space A side in the Y-axis direction from the position from which the plasma P is emitted. The electric wiring is disposed in the inside space A of the support frame 8, and is connected to the outside of the processing chamber 1 via a feedthrough. As in the embodiments of Figure 1 , the inside space A in which the electric wiring is disposed is a closed space, and the pressure thereof is a pressure equivalent to the atmospheric pressure. As shown in Figure 2 , by using the support frame 8 of the neutralizer N disposed in the processing chamber 1 as the box body 2, a reduction in component cost can be achieved. Figure 3

[0037] Sometimes, the wafer W is kept in a high-temperature state of 100°C to 500°C, and the ion implantation process to the wafer W is performed. Such ion implantation process is called high-temperature implantation. In Figure 3 , the neutralizer N is provided with a permanent magnet M. In this case, demagnetization of the permanent magnet M caused by heat of the wafer W is feared. In order to avoid such demagnetization risk, the neutralizer N can also be provided with a cooling unit.

[0038] In Figure 4 ​In the structure shown, a cooling plate 11 is attached to the end surface on the wafer W side of the support frame 8. The cooling plate 11 is internally formed with a refrigerant flow path. By causing refrigerant to flow in the refrigerant flow path, the temperature rise of the permanent magnet M is suppressed by the support frame 8. As the structure of the cooling plate 11, in addition to providing the refrigerant flow path, a Peltier element can also be used to cool the support frame 8.

[0039] Due to plasma generated by residual gas in the processing chamber 1 or backstreaming particles generated when the ion beam IB is irradiated to the wafer W, there is a possibility that the wafer W side surface of the cooling plate 11 will be damaged. Due to damage to the cooling plate 11, there is a concern that the refrigerant will flow out, the cooling function will decrease, and the like. In order to eliminate such concerns, a protective plate 12 that covers the wafer W side surface of the cooling plate 11 can also be provided.

[0040] As shown in FIG. 1, the protective plate 12 is provided so as to cover the wafer W side surface of the cooling plate 11. Figure 4 In the case where the cooling plate 11 and the protective plate 12 cover one surface of the support frame 8 as a whole, an opening Hl is provided in advance so as not to interfere with the measurement by the radiation thermometer 3. Further, the cooling plate 11 and the protective plate 12 can also extend to the passage of the ion beam IB. In this case, as shown in FIG. 2, an ion beam IB passage opening HB is provided in advance in the cooling plate 11 and the protective plate 12 so as not to interfere with the transport of the ion beam IB. Figure 5

[0041] Figure 3 to Figure 5 The neutralizer N shown is a high-frequency type flood plasma gun, but as long as a support frame 8 having an internal space A is provided, an electron source that supplies electrons from a filament can also be used as the neutralizer N.

[0042] Due to backstreaming particles from the wafer W, outgassing from the resist, and the like, there is a concern that the window 4 will be contaminated. Such contamination progresses with the passage of ion implantation time. If the contamination of the window 4 progresses, it becomes difficult to accurately perform the measurement by the radiation thermometer 3. In order to again perform accurate measurement by the radiation thermometer 3, it is necessary to perform maintenance such as cleaning or replacement of the window 4 by opening the atmosphere of the processing chamber 1. When maintenance is performed, the ion implantation apparatus IM is stopped. If the maintenance period due to contamination of the window 4 becomes shorter, the operating rate of the ion implantation apparatus IM decreases.

[0043] Therefore, in order to suppress contamination of the window 4, a shielding member described in Figure 6 to Figure 8 can also be used. In Figure 6 , the shielding member 13 is disposed on the path for temperature measurement between the window 4 and the wafer W. The path for temperature measurement is a path on a straight line connecting the radiation thermometer 3 and the wafer W in the Z-axis direction. ​The shield member 13 is connected to the drive shaft 14. Figure 7 is an XY plan view of the shield member 13 as viewed from the wafer W side. Figure 6 The shield member 13 is moved by using the drive shaft 14 to open / close the path for temperature measurement.

[0044] The shield member 13 is moved in the upward / downward direction as indicated by an arrow B1 to open / close the path for temperature measurement. When temperature measurement is performed by using the radiation thermometer 3, the shield member 13 is moved upward from the state as indicated by an arrow B2 to open the path for temperature measurement. On the contrary, the shield member 13 is moved downward from the position at which temperature measurement is performed by using the radiation thermometer 3 to move the shield member 13 into the path for temperature measurement. Thus, the path for temperature measurement is closed, and the window 4 from the contamination source is protected. Figure 7 Further, as indicated by an arrow B2, the drive shaft 14 can be moved in rotation. Figure 7 Further, as indicated by an arrow D, the drive shaft 14 can be rotated around the Y axis to open / close the path for temperature measurement. Figure 7 In the structure as indicated by an arrow D, the shield member 13 is moved to open / close the path for temperature measurement, but the structure can be different from this. For example, the shield member 13 can be structured as the same as the aperture mechanism of a camera, and the path for temperature measurement can be opened / closed by aperture opening / closing operation. Figure 8 As for the wafer transport mechanism E, the wafer W can be moved on a linear guide rail. In , a wafer transport mechanism E using a ball screw is described.

[0045] One end of the ball screw 15 is connected to a drive source 16 provided outside the processing chamber 1. A moving member not shown is connected to the end portion of the table 5 in the X axis direction. The moving member is moved in the Y axis direction in reciprocation by rotation of the ball screw 15. Figure 6 to Figure 8 Two guide rails 17 are provided in the processing chamber 1, and the two guide rails 17 are separated in the Z axis direction and support the end portions of the table 5 in the X axis direction.

[0046] As in the embodiment of Figure 9 , the wafer transport mechanism E can be structured as a linear guide rail.

[0047] As in the embodiment of Figure 1 to Figure 8 , the wafer transport mechanism E can be structured as a linear guide rail. Figure 9 ​​​The ion beam IB shown can be scanned in the X-axis direction, but can also be a band-shaped beam that is not scanned in the X-axis direction. The band-shaped beam is an ion beam IB whose cross section in the XY plane is roughly rectangular. In the cross section of the ion beam IB in the XY plane, there is a relationship in which the dimension in the X-axis direction is greater than the dimension in the Y-axis direction.

[0048] In Figure 9 The ion implantation apparatus IM2 shown has the direction of gravity as the X-axis direction. When the wafer W is replaced, the platen 5 is moved downward. Figure 9 Thereafter, the platen 5 is rotated with the Y-axis direction as the axis of rotation, and the wafer support surface of the platen 5 is directed toward the upper side of the paper. While the platen 5 is in this state, the valve V is opened, and wafer W is transported between the platen 5 and the load lock chamber.

[0049] In Figure 9 The ion implantation apparatus IM2 shown has an internal space A of atmospheric pressure provided in the housing 2, and the radiation thermometer 3 is disposed in this space. Thus, as with the embodiment described in Figure 1 to Figure 8 , the temperature of the wafer W during implantation processing can also be accurately measured.

[0050] In ion implantation processing, the ion beam IB is not necessarily irradiated perpendicularly with respect to the main surface of the wafer W. Depending on the ion implantation processing, the tilt angle of the platen 5 is sometimes adjusted so that the ion beam IB is irradiated at an angle different from that perpendicular to the main surface of the wafer W.

[0051] The case of the platen 5 when the tilt angle is adjusted is depicted in Figure 10 By irradiating the ion beam IB toward the wafer W, particles that are recoiled from the wafer W are scattered. As shown in Figure 10 , in the case when the tilt angle is adjusted, the recoiled particles are scattered from the wafer W that passes through the irradiation region R3 in the direction indicated by the dotted arrow. At this time, the recoiled particles adhere to the window 4, and the window 4 can become contaminated. To prevent contamination of the window 4 by such recoiled particles, a protruding portion 20 is provided in the housing 2 in Figure 10

[0052] The protruding portion 20 can be formed by the housing 2 itself, but can also be formed by a member different from the housing 2. The protruding portion 20 is disposed further to the irradiation region R3 side than the position at which the window 4 is provided, and protrudes further to the direction of travel of the ion beam IB than the window 4. By providing such a protruding portion 20 to the housing 2, contamination of the window 4 by recoiled particles can be suppressed. ​​In addition, a part of the member can be used as the protruding portion 20. That is, if a part of the member is arranged on the irradiation region R3 side more than the position where the window 4 is provided and protrudes more to the ion beam traveling direction side than the window 4, the effect of the protruding portion 20 described herein can be obtained.

[0053] In Figure 11 a cross-sectional view, a specific structure example regarding the mounting of the window 4 to the case 2 is depicted. Figure 11 The mounting position of the case 2 relative to the processing chamber 1 in Figure 1 is the same position as in . Inside the case 2, the front end of the radiation thermometer 3 is mounted to a mounting fitting 31. The mounting fitting 31 is screwed to a mounting flange 32 and is fixed relative to the wall surface of the case 2. By the assembly of the components, the window 4 is sandwiched between the components. The mounting flange 32 has an opening H2 for temperature measurement and is fixed to the outer wall of the case 2 by a bolt. In addition, a resin-made gasket can be mounted between the mounting fitting 31 and the window 4 for cushioning the impact when the window 4 is sandwiched. Furthermore, an O-ring can be mounted between the window 4 and the mounting flange 32 and between the mounting flange 32 and the outer wall of the case 2 to improve the air tightness in the internal space A of the case 2.

[0054] In Figure 11 a cross-sectional view, the mounting flange 32 is divided into the upper side and the lower side at the position of the opening H2. Here, the lower side of the mounting flange 32 corresponds to the structure of the protruding portion 20 described above and thus has the same function as the protruding portion 20 in Figure 10 . Thus, by adopting the mounting structure of the window 4 in Figure 11 , the contamination suppression effect of the window 4 by the protruding portion 20 described in Figure 10 can be obtained. Also, the cooling plate 11 and the protection plate 12 described in Figure 4 and Figure 5 correspond to the structure of the protruding portion 20 and thus have the same contamination prevention effect as the protruding portion 20.

[0055] In the embodiments described thus far, the structure using a single radiation thermometer 3 is used, but in the case where temperature measurement is performed at a plurality of points in the wafer surface, a plurality of radiation thermometers 3 can be arranged in the Y-axis direction or the X-axis direction or both directions to perform temperature measurement of the wafer W. Furthermore, one of the plurality of radiation thermometers 3 can be used as a verification radiation thermometer. As time passes, contamination of the window 4 progresses, and thus the measurement accuracy of the radiation thermometer decreases. In the case of severe contamination, sometimes measurement cannot be performed. Furthermore, sometimes although measurement can be performed, the measured value is erroneous.

[0056] The verification radiation thermometer is used only at the time of verification of whether the value of the other radiation thermometer is normal. Outside the time of verification, the window 4 corresponding to the verification radiation thermometer is protected in advance by the shielding member 13 or the like. The measurement results of the measurement radiation thermometer and the verification radiation thermometer are compared, and when the temperature difference is outside a predetermined range, maintenance such as cleaning or replacement is performed on the measurement radiation thermometer.

[0057] In the embodiment so far, the replacement of the wafer W is performed in the first non-irradiation region Rl, and the temperature measurement of the wafer W using the radiation thermometer 3 is performed in the second non-irradiation region R2. However, both can be performed in the same non-irradiation region. In the case where the processing shown below is performed as feedback control, if the replacement of the wafer W and the temperature measurement of the wafer W are performed in the same non-irradiation region, it is advantageous in that the time required for the processing can be shortened. As a specific example of feedback control, there can be mentioned a processing of immediately recovering the wafer W into the cassette at the stage where the measured value of the wafer temperature exceeds the reference temperature, or a processing of arranging a cooling unit outside the processing chamber 1 and immediately transporting the wafer W to the cooling unit outside at the stage where the measured value of the wafer temperature exceeds the reference temperature, and the like.

[0058] The temperature measurement in the first non-irradiation region Rl and the second non-irradiation region R2 can also be performed a plurality of times. For example, the number of times is set to 5, and the average value at the 5 measurements is set to the measured temperature of the wafer W. Further, the highest temperature and the lowest temperature can be determined from the measured values obtained by the 5 measurements, and they are compared with the reference value, thereby discriminating the accuracy of the temperature measurement. Also, the difference between the highest temperature and the lowest temperature can be calculated, and the calculated difference and the reference value are compared, thereby discriminating the accuracy of the temperature measurement.

[0059] Further, the present application is not limited to the embodiment described above, and various modifications can of course be made within the scope of the gist thereof. Explanation of Reference Numerals

[0060] 1 processing chamber 2 box body 3 radiation thermometer 4 window 8 support frame 11 cooling plate 13 shielding member 20 protrusion W wafer IB ion beam Rl first non-irradiation region R2 second non-irradiation region R3 irradiation region H1, H2 opening E wafer transport mechanism N neutralizer IM, IM2 ion implantation device

Claims

1. An ion implantation device, characterized in that, have: Processing room; The wafer transport mechanism enables the wafer to move linearly back and forth throughout the processing chamber, covering the first non-irradiated area, the irradiated area, and the second non-irradiated area of ​​the ion beam. The housing is disposed in either the first non-irradiated area or the second non-irradiated area; A radiation thermometer is disposed inside the housing in a space at atmospheric pressure; as well as A window, installed in the housing, allows infrared light emitted from the chip to pass through.

2. The ion implantation apparatus according to claim 1, characterized in that, The housing is opposite the wafer at the reciprocating position of the wafer.

3. The ion implantation apparatus according to claim 1, characterized in that, It also includes: a neutralizer for neutralizing the charge on the wafer; and a support frame for supporting the neutralizer. The support frame also serves as the housing.

4. The ion implantation apparatus according to claim 3, characterized in that, The neutralizer is equipped with a permanent magnet. The support frame includes a cooling plate, which has an opening at a position corresponding to the window.

5. The ion implantation apparatus according to claim 1, characterized in that, The wafer is replaced and its temperature is measured using the radiation thermometer in the same non-irradiated area.

6. The ion implantation apparatus according to claim 1, characterized in that, A shielding component capable of opening and closing the path is provided on the path between the window and the wafer.

7. The ion implantation apparatus according to claim 1, characterized in that, The housing has a protrusion that is positioned closer to the irradiation area than the location where the window is set, and protrudes further into the direction of travel of the ion beam within the processing chamber than the window.

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