Spraying structure and process equipment and process method of semiconductor device

Abstract

The invention discloses a spraying structure, process equipment of a semiconductor device and a process method of the semiconductor device. The spraying structure comprises a gas distribution assembly which is located below a gas inlet of a process cavity so as to distribute and diffuse process gas; the cooling part is arranged in the gas distribution assembly and used for cooling the process gas to a target temperature, and the target temperature is lower than the temperature of a wafer in the process cavity; and the spraying bottom plate is arranged below the gas distribution assembly so as to introduce the process gas into the process cavity and cool the wafer. Targeted cooling can be formed, cold energy is intensively acted on the surface of the wafer needing to be cooled, the utilization rate of the cold energy is improved, the cooling precision of the temperature of the surface of the wafer can be improved, and the cooling uniformity of the surface of the wafer is improved.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor manufacturing, specifically to a spray structure, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium. Background Technology

[0002] In the semiconductor device manufacturing process, the front-end high-temperature process (usually exceeding 200°C) can cause thermal stress accumulation on the wafer surface or affect the accuracy of subsequent processes. Therefore, it is necessary to introduce cooling gas into the process chamber to achieve rapid cooling of the wafer.

[0003] In existing technologies, cooling devices are typically added outside the process cavity to cool the gases fed into it. However, this current cooling method only cools the process gases before they enter the cavity and cannot reach the heat of the wafer itself. Due to uncontrollable external ambient temperature and spray plate temperature, even if the gas is pre-cooled to the target temperature, its temperature after entering the spray plate for mixing is uncontrollable. Moreover, when multiple process gases need to be mixed, the uncontrollable temperature and flow rate of other gases can easily lead to a large temperature difference between the final temperature reaching the wafer surface and the target temperature, resulting in uncontrolled wafer temperature. In this situation, not only are process requirements not met, but the utilization rate of cooling capacity is also very low.

[0004] Furthermore, this external cooling method suffers from gas transport delays, resulting in a slow response to temperature changes on the wafer surface, which cannot meet the demands of instantaneous cooling. Moreover, the cooled gas tends to accumulate locally after entering the cavity, leading to a significant temperature difference between the wafer edge and center. Therefore, this existing cooling method fails to meet the process requirements of advanced manufacturing processes (such as 7nm and below) in terms of temperature control accuracy, temperature response speed, and uniformity of wafer surface cooling.

[0005] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the field for an improved spray structure that can form targeted cooling, concentrate the cooling energy on the wafer surface that needs to be cooled, not only improving the utilization rate of cooling energy, but also improving the cooling accuracy of the wafer surface and enhancing the uniformity of wafer surface cooling. Summary of the Invention

[0006] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0007] To overcome the aforementioned deficiencies in the prior art, the present invention provides a spray structure, a semiconductor device process equipment, a semiconductor device process method, and a computer-readable storage medium, which can form targeted cooling, concentrating the cooling energy onto the wafer surface that needs to be cooled. This not only improves the utilization rate of the cooling energy but also improves the cooling accuracy of the wafer surface and enhances the uniformity of the wafer surface cooling.

[0008] Specifically, the spray structure provided by the first aspect of the present invention includes: a gas distribution assembly located below the gas inlet of the process chamber to distribute and diffuse the process gas; a cooling element disposed in the gas distribution assembly for cooling the process gas to a target temperature, wherein the target temperature is lower than the wafer temperature in the process chamber; and a spray base plate disposed below the gas distribution assembly to introduce the process gas into the process chamber to cool the wafer.

[0009] Furthermore, in some embodiments of the present invention, the gas distribution assembly includes at least one gas distribution baffle located below the air inlet to radially split the process gas.

[0010] Furthermore, in some embodiments of the present invention, the gas distribution assembly includes multiple layers of gas distribution baffles, with the lower layer gas distribution baffle disposed below the edge of the upper layer gas distribution baffle to distribute the process gas flowing down from the edge of the upper layer gas distribution baffle layer by layer, wherein the size of the lower layer gas distribution baffle is smaller than the size of the upper layer gas distribution baffle.

[0011] Furthermore, in some embodiments of the present invention, the surface of the gas distribution baffle is provided with a plurality of radial guide channels to guide the process gas to be distributed along a preset path on the surface of the gas distribution baffle.

[0012] Furthermore, in some embodiments of the present invention, the cooling element includes a cooling channel through which a low-temperature fluid is introduced to cool and reduce the process gas flowing through the gas distribution assembly.

[0013] Furthermore, in some embodiments of the present invention, the gas distribution assembly is provided with a temperature probe for detecting the current temperature of the process gas.

[0014] Furthermore, the semiconductor device process equipment provided according to the second aspect of the present invention includes: a process chamber in which a wafer is placed; and the spray structure provided in the first aspect of the present invention, located below the air inlet of the process chamber, for introducing process gas cooled to a target temperature into the process chamber to cool the wafer via the process gas for low-temperature process processing.

[0015] Furthermore, according to the third aspect of the present invention, the process method for the semiconductor device described above is implemented using the process equipment for the semiconductor device described above according to the first aspect of the present invention. The process method includes the following steps: determining a target temperature based on a low-temperature process; adjusting the temperature of the cooling element in the spray structure to cool the process gas flowing through the cooling element to the target temperature, wherein the target temperature is lower than the wafer temperature in the process chamber; and introducing the process gas into the process chamber via the spray base plate in the spray structure to cool the wafer.

[0016] Furthermore, in some embodiments of the present invention, the step of adjusting the temperature of the cooling element in the spray structure includes: adjusting the temperature of the cooling element located in the gas distribution assembly to below the target temperature before the process gas enters the spray structure.

[0017] Furthermore, in some embodiments of the present invention, during the process of the process gas flowing through the gas distribution assembly after entering the spray structure, the temperature of the cooling element is adjusted to be below the target temperature.

[0018] Furthermore, according to a fourth aspect of the present invention, a computer-readable storage medium is provided having computer instructions stored thereon. When the computer instructions are executed by a processor, a process method for implementing the semiconductor device described above according to the third aspect of the present invention is implemented. Attached Figure Description

[0019] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0020] Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0021] Figure 2A A cross-sectional structural schematic diagram of a gas distribution assembly provided according to some embodiments of the present invention is shown.

[0022] Figure 2B A cross-sectional structural schematic diagram of a gas distribution assembly provided according to other embodiments of the present invention is shown.

[0023] Figure 2C A cross-sectional structural schematic diagram of a gas distribution assembly provided according to other embodiments of the present invention is shown.

[0024] Figure 3 A schematic diagram of the cooling channel structure provided according to some embodiments of the present invention is shown.

[0025] Figure 4 A flowchart of a process method for a semiconductor device according to some embodiments of the present invention is shown.

[0026] Figure label:

[0027] 100 Semiconductor device manufacturing equipment;

[0028] 110 process cavity;

[0029] 111 air intake;

[0030] 120 heating plate;

[0031] 200 spray structure;

[0032] 210 gas distribution unit;

[0033] 211 Upper air distribution baffle;

[0034] 212 Lower layer air distribution baffle;

[0035] 213 First air distribution baffle;

[0036] 214 Second air distribution baffle;

[0037] 215 Third Valve Baffle;

[0038] 220 cooling components;

[0039] 221 cooling channel;

[0040] 230 spray base plate;

[0041] 240 temperature probe;

[0042] Steps S410~S430. Detailed Implementation

[0043] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0044] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0045] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0046] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0047] As mentioned above, in existing technologies, a cooling device is typically added outside the process cavity to cool the gas fed into the cavity. However, this existing cooling method can only cool the process gas before it enters the cavity and cannot reach the heat of the wafer itself. Due to uncontrollable external ambient temperature and spray plate temperature, even if the gas is pre-cooled to the target temperature, its temperature after entering the spray plate for mixing is uncontrollable. Moreover, when multiple process gases need to be mixed, the temperature and flow rate of other gases are also uncontrollable, which can easily lead to a large temperature difference between the final temperature reaching the wafer surface and the target temperature, resulting in wafer temperature runaway. In this case, not only are process requirements not met, but the utilization rate of cooling capacity is also very low. In addition, in this external cooling method, due to the delay in gas transmission, the response speed of wafer surface temperature changes is slow, which cannot match the instantaneous cooling requirements. Furthermore, after the cooled gas enters the cavity, local accumulation is likely to occur, resulting in a significant temperature difference between the gas at the wafer edge and the center. Therefore, the existing cooling method cannot meet the process requirements of advanced processes (such as 7nm and below) in terms of temperature control accuracy, temperature response speed, and uniformity of cooling on the wafer surface.

[0048] To address the aforementioned problems in the prior art, this invention provides a spray structure, a semiconductor device manufacturing equipment, and a semiconductor device manufacturing method, forming targeted cooling that concentrates cooling energy onto the wafer surface requiring cooling. This not only improves the utilization rate of cooling energy but also enhances the cooling accuracy of the wafer surface and improves the uniformity of wafer surface cooling.

[0049] In some non-limiting embodiments, the spray structure provided in the first aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention, and used to implement the process method of the semiconductor device provided in the third aspect of the present invention.

[0050] Specifically, in some non-limiting embodiments, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions thereon. When the computer instructions are executed by a processor, they can be used to implement the process method of the semiconductor device provided in the third aspect of the present invention.

[0051] The working principle of the above-described spray structure will be described below with reference to embodiments of semiconductor device process equipment and methods. Those skilled in the art will understand that these embodiments of semiconductor device process equipment and methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the spray structure. Similarly, the spray structure is also only one non-limiting implementation provided by the present invention, and does not limit all operating modes or functions of these semiconductor device process equipment, nor does it limit the implementing entities and execution order of each step in the semiconductor device process method.

[0052] Please refer to Figure 1 , Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown.

[0053] like Figure 1 As shown, in some embodiments of the present invention, the semiconductor device process equipment 100 mainly includes a process chamber 110 and a spray structure 200. The process chamber 110 is provided with a heating plate 120, which can be used to support the wafer and regulate the temperature to bring the wafer close to the target temperature required for the target process. The spray structure 200 can be located below the air inlet 111 of the process chamber 110, and is used to introduce process gas cooled to the target temperature into the process chamber 110 to cool the wafer for low-temperature processing.

[0054] In this embodiment, the spray structure 200 can cool the gas before it is sprayed, thereby greatly shortening the transport path of the cooling gas and enabling targeted cooling of the wafer. This reduces delays and cooling energy consumption during gas transport, ensuring that the temperature of the process gas reaching the wafer surface is the target temperature, thus cooling the wafer surface to the target temperature. Here, "wafer" can include bare wafers or device wafers. The type of wafer should match the type of cryogenic process to be performed.

[0055] Specifically, in some optional embodiments, cryogenic processing may include photolithography or etching processes following deposition. If the wafer directly enters the photolithography or etching process after deposition, the high temperature on the wafer surface can cause the photoresist to soften or the etching rate to become unstable. Cryogenic processing may also include rapid thermal processing (RTP), or ion implantation or etching processes after thermal oxidation, which require rapidly reducing the wafer surface temperature from above 1000°C to below 200°C. In addition, cryogenic processing may also include thinning or testing processes after wafer bonding. If rapid cooling is not achieved after bonding, thermal stress can cause cracking at the wafer bonding interface.

[0056] Continue as Figure 1 As shown, in some embodiments of the present invention, the spray structure 200 may include a gas distribution assembly 210, a cooling element 220, and a spray base plate 230. The gas distribution assembly 210 may be located below the air inlet 111 of the process chamber 110 to distribute and diffuse the process gas. The cooling element 220 may be disposed in the gas distribution assembly 210 to cool the process gas to a target temperature. The target temperature may be lower than the wafer temperature inside the process chamber 110. The spray base plate 230 may be disposed below the gas distribution assembly 210 to introduce process gas into the process chamber 110 to cool the wafer. In this embodiment, by disposing of the cooling element 220 within the gas distribution assembly 210, not only is the integration of the equipment improved, eliminating the need for additional heat exchange components outside the process chamber 110 and shortening the transmission path of the process gas, thus improving the utilization rate of cooling capacity, but it also further improves the cooling accuracy of the wafer surface temperature and enhances the uniformity of wafer surface cooling.

[0057] Specifically, such as Figure 1 As shown, in some optional embodiments, the gas distribution assembly 210 may include at least one gas distribution baffle. The gas distribution baffle may be located below the air inlet 111 to block the straight flow of gas flowing in from the air inlet 111, causing the high-speed concentrated process gas flow to be radially distributed and diffused to the outer edge, forming a more uniform planar distribution. The cooling element 220 may be disposed inside or on the upper surface of at least one gas distribution baffle.

[0058] Further, please see Figure 2A , Figure 2AA cross-sectional structural schematic diagram of a gas distribution assembly provided according to some embodiments of the present invention is shown.

[0059] like Figure 2A As shown, in some optional embodiments, the gas distribution assembly 210 may include multiple layers of gas distribution baffles. A lower gas distribution baffle 212 may be disposed below the edge of the upper gas distribution baffle 211 to progressively distribute the process gas flowing down from the edge of the upper gas distribution baffle 211. The size of the lower gas distribution baffle 212 may be smaller than the size of the upper gas distribution baffle 211 to compensate for the gas flow rate in the area blocked by the upper gas distribution baffle 211. Specifically, the larger upper gas distribution baffle 211 first disperses the concentrated intake gas, performing a first large-scale diffusion, preferentially dispersing and guiding the airflow to the edge area of ​​the spray base plate 230. The smaller lower gas distribution baffle 212, located below the upper gas distribution baffle 211, is smaller in size than the upper gas distribution baffle 211, therefore its edge is located in the blocked area below the upper gas distribution baffle 211 (e.g., the lower gas distribution baffle 212). Figure 2A (As shown by the dashed line representing the airflow path), thereby enabling the process gas to be diverted to the shielded area. In this embodiment, the process gas is diffused to a uniform flow direction through a multi-layer gas distribution baffle. The cooling element 220 provided in the gas distribution baffle can reduce the temperature difference between the process gas at the wafer edge and the center, improve the uniformity of surface cooling, and thus avoid local process deviations.

[0060] Furthermore, such as Figure 2B As shown, in some optional embodiments, there can be an even number of lower-level gas distribution baffles 212 on the same layer, forming a symmetrically distributed gas distribution assembly 210. The airflow can be evenly distributed layer by layer along paths that divide into two or four. The flow rate ratio of each layer can be precisely controlled to ensure that the air volume finally distributed to each area of ​​the spray base plate 230 is highly consistent. In this embodiment, since the distribution paths are completely symmetrical, flow rate deviations caused by path differences can be avoided, making it suitable for deposition processes with extremely high requirements for flow rate uniformity.

[0061] In some alternative embodiments, the size of the lower air distribution baffle may be smaller than the size of the upper air distribution baffle to which it is physically connected. For example... Figure 2C As shown, the first air distribution baffle 213, the second air distribution baffle 214, and the third air distribution baffle 215 are located in three layers. The second air distribution baffle 214, located in the second layer, is smaller than the first air distribution baffle 213, which is physically connected to it. The second air distribution baffle 214, located in the third layer, is smaller than the first air distribution baffle 213, which is physically connected to it, but can be larger than, smaller than, or equal to the size of the second air distribution baffle 214.

[0062] In this embodiment, the aforementioned staggered baffle structure, through the misalignment of the upper and lower baffles, can force the airflow to deflect and circulate, forming a large number of tiny vortices. This effectively breaks up uneven airflow clusters, allowing multiple process gases, or process gases and carrier gases, to mix thoroughly and eliminate local concentration differences. In comparison, the aforementioned... Figure 2B The provided symmetrical gas splitting assembly 210 mainly relies on the diffusion effect of multi-stage splitting, resulting in a weak mixing effect and a tendency for localized gas composition unevenness. Furthermore, Figure 2C The provided staggered gas distribution assembly 210 naturally creates a lateral pressure difference with high pressure at the center and low pressure at the edges, thereby driving the central airflow to replenish the edges, ensuring high uniformity of pressure and flow rate across the entire spray structure 200 coverage area. In contrast, while the aforementioned symmetrical gas distribution assembly 210 balances the flow rate through symmetrical distribution, its pressure replenishment capability for the edge region is limited, and uneven wafer edge reaction may still occur under extreme process conditions. Therefore, in this embodiment, edge compensation driven by pressure difference can further improve the uniformity of cooling and process effects in the wafer center and edge regions.

[0063] Furthermore, in some embodiments, the surface of the gas distribution baffle may be provided with several radial flow channels to guide the process gas to flow along a preset path on the surface of the gas distribution baffle. For example... Figure 2A or Figure 2B As shown, the airflow flowing from the edge of the upper gas distribution baffle 211 to the lower gas distribution baffle 212 will experience flow deviation due to inertial impact and eddy current interference. The airflow will diffuse chaotically on the surface of the lower gas distribution baffle 212, making it impossible to guarantee the uniformity of the gas distributed to the surrounding areas via the baffle. To address this, by creating guide channels on the surface of the gas distribution baffle, the airflow direction can be actively guided, the velocity distribution can be controlled, and the directional distribution of the airflow can be strengthened. This improves the accuracy and consistency of gas delivery to the edge and center regions of the wafer surface, thereby further enhancing the uniformity of cooling between the edge and center regions of the wafer surface.

[0064] In some alternative embodiments, the gas-distributing baffle can be an umbrella-shaped inclined plate with an inclination angle ranging from 0° to 60°. By setting the gas-distributing baffle as an umbrella-shaped inclined plate sloping downwards from the center to the edge, the gas distribution velocity can be increased, thereby improving process efficiency. Furthermore, in some preferred embodiments, the gas-distributing baffle can be an umbrella-shaped inclined plate, and its surface is also provided with several radial guide channels to further increase the gas distribution velocity and ensure the uniformity of gas distribution.

[0065] Next, please refer to Figure 3 , Figure 3 A schematic diagram of the cooling channel structure provided according to some embodiments of the present invention is shown.

[0066] like Figure 3As shown, in some embodiments, the cooling element 220 may include a cooling channel 221 through which a cryogenic fluid can flow to cool the process gas flowing through the gas distribution assembly 210. Specifically, the cryogenic fluid may include cooling gas and cooling liquid. Cooling gas may include, but is not limited to, nitrogen, helium, and clean dry air. These gases are suitable for cryogenic and clean cooling scenarios. Cooling liquid may include, but is not limited to, deionized water, ethylene glycol aqueous solution, fluorinated liquid, and mineral oil / synthetic oil. These liquids are suitable for cooling scenarios requiring high efficiency and large heat removal. Furthermore, by placing the cooling element 220 in the gas distribution assembly 210, the gas being distributed can be cooled during the distribution process, thereby further improving the uniformity of the distributed gas temperature.

[0067] Continue as Figure 1 As shown, preferably, the gas distribution assembly 210 may also be equipped with a temperature probe 240 for detecting the current temperature of the process gas, thereby facilitating real-time monitoring and adjustment of the temperature of the process gas flowing through the gas distribution assembly 210. This enables more precise temperature control and cooling of the process gas.

[0068] This concludes the basic description of the spray structure 200 provided in the first aspect of the present invention, and the main structure of the semiconductor device process equipment 100 provided in the second aspect of the present invention. Next, please refer to... Figure 4 Let's work together to understand the working principle of the spray structure 200. Figure 4 A flowchart of a process method for a semiconductor device according to some embodiments of the present invention is shown.

[0069] like Figure 4 As shown, in some embodiments of the present invention, the semiconductor device manufacturing process can be implemented via a semiconductor device manufacturing apparatus 100. This manufacturing process may include steps S410-S430. Step S410 involves determining a target temperature based on a low-temperature process. Step S420 involves adjusting the temperature of the cooling element in the spray structure to cool the process gas flowing through the cooling element to the target temperature. The target temperature may be lower than the wafer temperature within the process chamber. Step S430 involves introducing process gas into the process chamber via a spray base plate in the spray structure to cool the wafer.

[0070] Specifically, in some optional embodiments, cryogenic processing may include photolithography or etching processes following deposition. If the wafer directly enters the photolithography or etching process after deposition, the high temperature on the wafer surface can cause the photoresist to soften or the etching rate to become unstable. Cryogenic processing may also include rapid thermal processing (RTP), or ion implantation or etching processes after thermal oxidation, which require rapidly reducing the wafer surface temperature from above 1000°C to below 200°C. In addition, cryogenic processing may also include thinning or testing processes after wafer bonding. If rapid cooling is not achieved after bonding, thermal stress can cause cracking at the wafer bonding interface.

[0071] The target temperature of the process gas can be determined based on the temperature requirements of the cryogenic process. In some optional embodiments, the correspondence between the temperature of the cooling element and the gas temperature can be pre-calibrated. Then, according to the target temperature of the process gas, the temperature of the cooling element 220 is adjusted to be below the target temperature. Generally, the temperature of the cooling element 220 can be set below the target temperature to ensure that the process gas can be cooled to the target temperature.

[0072] It is understood that, in this invention, the correspondence between gas temperature and cooling component temperature can vary depending on the type of gas, gas flow rate, cooling component material, and cooling component structure. This variation may be a linear shift, a proportional amplification or reduction, an exponential amplification or reduction, or a combination of these. The actual correspondence between the two is subject to calibration results and will not be elaborated further here.

[0073] Continue as Figure 4 As shown, in some optional embodiments, when performing step S420 above, the temperature of the cooling element 220 located in the gas distribution assembly 210 can be pre-adjusted to below the target temperature before the process gas enters the spray structure 200. Then, the process gas is introduced into the spray structure 200 so that it is directly and quickly cooled to the target temperature by the pre-adjusted cooling element 220, thereby improving the cooling efficiency.

[0074] In some alternative embodiments, if the precise target temperature is not obtained beforehand, the process gas can be introduced into the spray structure 200 first, and then, during its distribution through the gas distribution assembly 210, the cooling intensity of the cooling element 220 can be changed to adjust its temperature below the target temperature, so that the process gas is cooled to the target temperature as it flows through the gas distribution assembly 210. In this embodiment, ineffective cooling waste can be reduced by concentrating all the cooling provided by the cooling element 220 in the spray structure 200 on the wafer surface that needs cooling.

[0075] Furthermore, in some preferred embodiments, the cooling temperature of the cooling element 220 can be adjusted in two stages: before the process gas enters the spray structure 200 and during the process gas flow through the gas distribution assembly 210. For example, before the process gas enters the spray structure 200, the cooling element 220 in the spray structure 200 is pre-adjusted to a first temperature slightly lower than the target temperature. Then, after the process gas enters the spray structure 200 and flows through the gas distribution assembly 210, the temperature of the cooling element 220 is finely adjusted to a second temperature lower than the target temperature based on the real-time temperature of the process gas detected by the temperature probe 240, so as to adjust the temperature of the process gas to the target temperature, thereby improving the accuracy of the cooling temperature regulation of the process gas. The second temperature can be lower than the first temperature.

[0076] In summary, the present invention provides a spray structure, a semiconductor device process equipment, and a semiconductor device process method, forming targeted cooling that concentrates the cooling energy onto the wafer surface that needs to be cooled. This not only improves the utilization rate of the cooling energy but also improves the cooling accuracy of the wafer surface and enhances the uniformity of the wafer surface cooling.

[0077] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0078] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0079] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0080] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A spray structure, characterized in that, include: The gas distribution assembly is located below the gas inlet of the process chamber to distribute and diffuse the process gas. A cooling element, disposed in the gas distribution assembly, is used to cool the process gas to a target temperature, wherein the target temperature is lower than the wafer temperature within the process cavity; as well as A spray base plate is located below the gas distribution assembly to introduce the process gas into the process chamber and cool the wafer.

2. The spray structure as described in claim 1, characterized in that, The gas distribution assembly includes at least one gas distribution baffle located below the air inlet to radially split the process gas.

3. The spray structure as described in claim 1, characterized in that, The gas distribution assembly includes multiple layers of gas distribution baffles, with the lower layer gas distribution baffle located below the edge of the upper layer gas distribution baffle to distribute the process gas flowing down from the edge of the upper layer gas distribution baffle layer by layer. The size of the lower layer gas distribution baffle is smaller than the size of the upper layer gas distribution baffle.

4. The spray structure as described in claim 2, characterized in that, The surface of the gas distribution baffle is provided with several radial flow channels to guide the process gas to flow along a preset path on the surface of the gas distribution baffle.

5. The spray structure as described in claim 1, characterized in that, The cooling component includes a cooling channel through which a low-temperature fluid is introduced to cool and reduce the temperature of the process gas flowing through the gas distribution assembly.

6. The spray structure as described in claim 1, characterized in that, The gas distribution assembly is equipped with a temperature probe for detecting the current temperature of the process gas.

7. A semiconductor device manufacturing apparatus, characterized in that, include: The process chamber, which houses the wafers; as well as The spray structure as described in any one of claims 1 to 6 is located below the air inlet of the process chamber and is used to introduce process gas cooled to a target temperature into the process chamber to cool the wafer via the process gas for low-temperature processing.

8. A process method for a semiconductor device, characterized in that, The process method is implemented using the process equipment of the semiconductor device as described in claim 7, and includes the following steps: Based on the low-temperature process, the target temperature is determined; and The temperature of the cooling element in the spray structure is adjusted to cool the process gas flowing through the cooling element to the target temperature, wherein the target temperature is lower than the wafer temperature in the process chamber; The process gas is introduced into the process chamber through the spray base plate in the spray structure to cool the wafer.

9. The process method as described in claim 8, characterized in that, The step of adjusting the temperature of the cooling component in the spray structure includes: Before the process gas enters the spray structure, the temperature of the cooling element located in the gas distribution assembly is pre-adjusted to below the target temperature.

10. The process method as described in claim 8 or 9, characterized in that, The step of adjusting the temperature of the cooling component in the spray structure further includes: During the process gas flow through the gas distribution assembly after entering the spray structure, the temperature of the cooling element is adjusted to be below the target temperature.

11. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the process method of the semiconductor device as described in any one of claims 8 to 10 is implemented.

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