Wafer processing apparatus, method, electronic device, and computer medium

Abstract

The application provides a wafer processing device, method, electronic equipment and computer medium, and belongs to the technical field of semiconductor manufacturing. The wafer processing device comprises a wafer polishing assembly, the wafer polishing assembly comprises a polishing disc, a polishing pad, a polishing head and a liquid supply module; a controller is used for determining wafer properties of a wafer; wafer polishing parameters of the wafer are determined according to the wafer properties; the wafer polishing assembly is controlled to polish the wafer according to the wafer polishing parameters, and the wafer polishing parameters are fed back to a polishing parameter library according to a wafer polishing result; wherein the wafer properties are whether the wafer is a wafer polished for the first time after replacing consumables and / or a process, and the replacing consumables comprises any one or more of replacing a polishing disc, replacing a polishing pad, replacing a polishing head, replacing polishing liquid and replacing a dressing head. The application can improve wafer polishing efficiency.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer processing apparatus, method, electronic device and computer medium. Background Technology

[0002] Currently, CMP (Chemical Mechanical Polishing) technology has been widely used in chip manufacturing. The thickness and uniformity of the remaining film on the wafer after CMP polishing are key performance indicators for the CMP process.

[0003] To determine the thickness and uniformity of the remaining film on the wafer after CMP polishing, it is crucial to determine the polishing pressure and removal rate during the wafer polishing process.

[0004] In related technologies, for non-metallic films, there is a certain lag in adjusting the removal rate and polishing pressure during wafer polishing. For example, the polishing pressure and removal rate can only be adjusted and feedback can only be given after the film thickness has been measured after wafer polishing. For the first wafer of a non-metallic film, such as the first wafer to be polished after changing the polishing pad, there is no reference for determining the polishing pressure and removal rate. Generally, it relies on relevant personnel to set them based on experience, resulting in poor accuracy in determining the polishing pressure and removal rate, which in turn affects the efficiency of wafer polishing. Summary of the Invention

[0005] The purpose of this application is to provide a wafer processing apparatus, method, electronic device, and computer medium to solve or at least alleviate one or more of the above-mentioned and other problems existing in the prior art.

[0006] A first aspect of this application provides a wafer processing apparatus, comprising: a wafer polishing assembly, the wafer polishing assembly including: a polishing disc, a polishing pad, a polishing head, and a liquid supply module; a controller, configured to determine the wafer attributes of the wafer; determine the wafer polishing parameters of the wafer based on the wafer attributes; control the wafer polishing assembly to polish the wafer according to the wafer polishing parameters, and feed back the wafer polishing parameters to a polishing parameter library based on the wafer polishing results; wherein, the wafer attributes are: whether the wafer is a wafer being polished for the first time after replacing consumables and / or changing the process, and the replacement consumables include: replacing the polishing disc, replacing the polishing pad, replacing the polishing head, replacing the polishing liquid, and replacing the dressing head, any one or more of these.

[0007] In one embodiment, when the controller feeds back the wafer polishing parameters to the polishing parameter library based on the wafer polishing result, it is specifically configured to: feed back the wafer polishing parameters to the polishing parameter library if the wafer polishing result meets the preset requirements; wherein the preset requirements include: the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the requirements.

[0008] In one embodiment, when the controller determines the wafer polishing parameters based on wafer properties, it specifically performs the following steps: if the wafer is a wafer that has undergone material replacement and / or is being polished for the first time after a process change, it retrieves reference polishing parameter information from the polishing parameter library; based on the weight values ​​corresponding to each reference polishing parameter item in the reference polishing parameter information, it performs a weighted summation of each reference polishing parameter item to obtain the wafer polishing parameters; wherein, the smaller the difference between the wafer polishing result corresponding to the reference polishing parameter item and the corresponding parameter specified in the preset requirements, the larger its corresponding weight value.

[0009] In one embodiment, the controller is further configured to: in response to the fact that the number of reference polishing parameters in the reference polishing parameter information has not reached a preset number, filter target parameter items from the reference polishing parameter information; and expand the reference polishing parameter information using the target parameter items so that the number of reference polishing parameters therein reaches a preset number.

[0010] In one embodiment, when the controller is used to filter target parameter items from the reference polishing parameter information, it is specifically used to: select the reference polishing parameter item whose corresponding wafer polishing result is closest to the preset requirement as the target parameter item.

[0011] A second aspect of this application provides a wafer fabrication method, including:

[0012] Determine the wafer attributes; determine the wafer polishing parameters based on the wafer attributes; polish the wafer according to the wafer polishing parameters, and feed the wafer polishing parameters back to the polishing parameter library based on the wafer polishing results; wherein, the wafer attributes are: whether the wafer is the first wafer polished after replacing consumables and / or changing the process, and the replacement consumables include: replacing the polishing disc, replacing the polishing pad, replacing the polishing head, replacing the polishing fluid, and replacing the dressing head, any one or more of the following.

[0013] In one embodiment, feeding back wafer polishing parameters to a polishing parameter library based on the wafer polishing result includes: if the wafer polishing result meets preset requirements, then feeding back the wafer polishing parameters to the polishing parameter library; wherein, the preset requirements include: the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the requirements.

[0014] A third aspect of this application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor executes the computer program to implement the steps of the methods described above.

[0015] A fourth aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the methods described above.

[0016] A fifth aspect of this application provides a computer program product, including a computer program or computer executable instructions, wherein when the computer program or computer executable instructions are executed by a processor, the steps of the methods described above are implemented.

[0017] The beneficial effect of the embodiments of this application is that the solution of this application can determine the wafer polishing parameters according to whether the wafer is a wafer polished for the first time after replacing consumables and / or changing the process. It is applicable to the wafer polishing scenario of the first wafer, ensuring the timeliness and accuracy of polishing the first wafer and improving the efficiency of polishing the first wafer.

[0018] The solution proposed in this application can feed back the wafer polishing parameters to the polishing parameter library based on the wafer polishing results, so as to update the polishing parameter library. This makes the data used to determine the wafer polishing parameters of the first wafer more reliable, thereby improving the accuracy and efficiency of polishing the first wafer. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the structure of a wafer polishing assembly provided in one embodiment of this application;

[0021] Figure 2 This is a schematic flowchart illustrating the process of determining wafer polishing parameters based on wafer properties, provided as an embodiment of this application.

[0022] Figure 3 A schematic flowchart illustrating the wafer polishing process provided in one embodiment of this application;

[0023] Figure 4 A flowchart illustrating the adjustment of the number of reference polishing parameters according to an embodiment of this application;

[0024] Figure 5 This is a schematic diagram showing the thickness and uniformity of the thin film on the first wafer after polishing it using existing technology.

[0025] Figure 6 This is a schematic diagram showing the thickness and uniformity of the thin film on the first wafer obtained after polishing the first wafer according to the scheme of this application.

[0026] Figure 7 This is a schematic diagram illustrating the steps of polishing the first wafer using the wafer processing apparatus proposed in this application.

[0027] Figure 8 A schematic flowchart of a wafer fabrication method provided in an embodiment of this application;

[0028] Figure 9 This is a schematic block diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0029] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0030] To make the objectives, technical solutions, and advantages of this application clearer, the following description will be provided in conjunction with the accompanying drawings and specific embodiments.

[0031] Figure 1 This is a schematic diagram of the structure of a wafer polishing assembly 11 provided in one embodiment of this application. This application provides a wafer processing apparatus, which includes a wafer polishing assembly 11 and a controller. Figure 1 The arrows in the diagram indicate the direction of rotation. The wafer polishing assembly 11 includes: a polishing disk 111, a polishing pad 112, a polishing head 113, and a liquid supply module 114.

[0032] Among them, the polishing disk 111 is used as a rotating base of the polishing system in the wafer polishing process, providing mechanical motion power and stability support for the wafer polishing process, driving the polishing pad 112 to rotate at high speed, and achieving wafer polishing through friction.

[0033] Polishing pad 112 is used as the working surface for mechanical polishing, directly contacting the wafer to ensure consistent force on the wafer surface.

[0034] Polishing head 113 is used to hold the wafer and precisely control the polishing pressure and movement.

[0035] The liquid supply module 114 is used to continuously deliver polishing liquid and maintain the chemical reaction environment during the wafer polishing process.

[0036] The controller is used to perform the following steps S101-S103:

[0037] S101. Determine the wafer properties;

[0038] S102. Determine the wafer polishing parameters based on the wafer properties;

[0039] In one embodiment, the wafer polishing parameters include the polishing pressure and removal rate of the polished wafer;

[0040] S103. Control the wafer polishing assembly to polish the wafer according to the wafer polishing parameters, and feed the wafer polishing parameters back to the polishing parameter library according to the wafer polishing results.

[0041] Among them, the wafer attributes are: whether the wafer is the first polishing wafer after replacing consumables and / or changing the process. The replacement consumables include any one or more of the following: replacing the polishing disk 111, replacing the polishing pad 112, replacing the polishing head 113, replacing the polishing fluid, and replacing the dressing head.

[0042] Changing the process refers to changing the film layer on the surface of the polished wafer. Different film layers are made of different materials, such as copper, aluminum, silicon, tungsten, etc.

[0043] The dressing head is used to perform micron-level cutting on the surface of the polishing pad 112 to remove the passivation layer accumulated during the polishing process and restore the porous structure and roughness of the polishing pad 112.

[0044] The solution proposed in this application can determine the wafer polishing parameters based on whether the wafer is being polished for the first time after replacing consumables and / or changing processes. This is applicable to the polishing of the first wafer, ensuring the timeliness and accuracy of polishing the first wafer and improving its efficiency. Furthermore, the solution can feed the wafer polishing parameters back to a polishing parameter library based on the polishing results, updating the library and ensuring that the data used to determine the polishing parameters of the first wafer again is more reliable, further improving the accuracy and efficiency of polishing the first wafer.

[0045] In some optional embodiments of this application, when the controller is used to execute the aforementioned S102, that is, to determine the wafer polishing parameters of the wafer based on the wafer properties, it is specifically used to execute the following steps S1021-S1022, and more details can be found in [the following text is missing from the original] Figure 2 As shown:

[0046] S1021. If the wafer is the first polishing after replacing consumables and / or changing the process, then obtain the reference polishing parameter information from the polishing parameter library.

[0047] Specifically, the aforementioned polishing parameter library includes multiple reference polishing parameter items whose corresponding wafer polishing results meet preset requirements; each reference polishing parameter item corresponds to a polished wafer, and each reference polishing parameter item includes: wafer removal rate and polishing pressure of multiple polishing areas of the wafer.

[0048] The preset requirements include that the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the regulations.

[0049] In one embodiment, the conformity of the wafer surface film thickness and wafer morphology characteristics to the specified conditions can be defined as follows: the thickness of the wafer surface film is within a preset thickness range, and the difference between the wafer morphology characteristics and the preset target morphology characteristics is less than a preset morphology difference value. The difference between the wafer morphology characteristics and the preset target morphology characteristics, as well as the preset morphology difference value, can be a matrix.

[0050] In one embodiment, the preset thickness range is determined based on the target thickness and the allowable deviation range. For example, if the target thickness is 3000A and the allowable deviation range is 100A, then the preset thickness range is 3000A ± 100A.

[0051] The multiple polishing areas of the wafer can be obtained by dividing the wafer into radial concentric circles, and the polishing pressure of different polishing areas can be different.

[0052] Accordingly, the surface of the polishing head 113 is also divided into several regions. For example, the surface of the polishing head 113 can be divided into seven geometrically independent or functionally distinguishable regions. Taking a 7-Zone polishing head as an example... , , , , , , It can represent the polishing pressure of seven zones.

[0053] In some optional embodiments of this application, the reference polishing parameter information in the polishing parameter library is obtained based on multiple historical polishing parameter items.

[0054] In one embodiment, the plurality of historical polishing parameter items are the wafer polishing parameters of a certain number of wafers that were first polished when the consumables were changed and / or the process was changed at least once in the past.

[0055] Using the wafer polishing parameters of a certain number of wafers polished at the beginning of the polishing process after at least one replacement of consumables and / or a change in process as reference polishing parameter information in the polishing parameter library can make the data used to determine the wafer polishing parameters of the first wafer more reliable and the polishing scenario more similar, thus ensuring the accuracy of the determined wafer polishing parameters of the first wafer.

[0056] In one embodiment, the reference polishing parameter information in the polishing parameter library includes the wafer's state information before polishing, which needs to be within a preset state range before polishing. Specifically, the state information includes the thickness of the wafer thin film and the wafer's morphological features. The preset state range before polishing includes a preset thickness range before polishing and a preset morphological feature range before polishing.

[0057] In one embodiment, such as Figure 3 As shown, the wafer polishing process may include the following steps S31-S35:

[0058] S31. Obtain multiple historical polishing parameter items;

[0059] S32. From multiple historical polishing parameter items, select a preset number of historical polishing parameter items whose wafer polishing results are closest to the preset requirements.

[0060] S33. For each historical polishing parameter item selected from the preset number, determine whether the corresponding wafer's state information before polishing is within the preset state range before polishing. If so, add the historical polishing parameter item to the reference polishing parameter information; otherwise, do not process it.

[0061] By removing historical polishing parameters whose pre-polishing state information of the corresponding wafer is outside the preset pre-polishing state range, the accuracy of the determined wafer polishing parameters of the first wafer can be ensured while improving data processing efficiency.

[0062] S34. When it is determined that the wafer to be polished is a wafer whose consumables have been replaced and / or whose process has been changed for the first time, the wafer polishing parameters are determined based on the reference polishing parameter information;

[0063] S35. Polish the wafer according to the determined wafer polishing parameters.

[0064] In one embodiment, the reference polishing parameter information can be in tabular form, with each row of the table corresponding to a wafer. The row information includes the removal rate and the polishing pressure of each polishing region across multiple polishing areas. In another embodiment, the table may also include a wafer number, which has no special meaning and is merely used to identify the wafer. Specifically, when the reference polishing parameter information includes 15 reference polishing parameter items, the reference polishing parameter information can be as shown in Table 1.

[0065] Table 1 Reference Polishing Parameter Information

[0066]

[0067] S1022. Based on the weight values ​​corresponding to each reference polishing parameter item in the reference polishing parameter information, perform a weighted summation on each reference polishing parameter item to obtain the wafer polishing parameters.

[0068] The smaller the difference between the wafer polishing result corresponding to the reference polishing parameter and the specified parameters in the preset requirements, the larger its corresponding weight value. The sum of the weight values ​​corresponding to each reference polishing parameter is 1.

[0069] The smaller the difference between the wafer polishing result corresponding to the reference polishing parameter item and the specified parameters in the preset requirements, the greater its corresponding weight value. This ensures that more reliable data accounts for a larger proportion in the process of determining the wafer polishing parameters, thus guaranteeing the accuracy of the determined wafer polishing parameters.

[0070] In some optional embodiments of this application, in S1022, the wafer polishing parameters are obtained by weighted summation of each reference polishing parameter item according to the weight value corresponding to each reference polishing parameter item in the reference polishing parameter information, including:

[0071] For each polishing region in each reference polishing parameter item, the polishing pressure of each polishing region is weighted and summed to obtain the polishing pressure of each polishing region of the wafer;

[0072] For each reference polishing parameter, the removal rate is weighted and summed to obtain the wafer removal rate.

[0073] The weights of the polishing pressure in each polishing zone and the weights of each removal rate are the same as the weights of their respective reference polishing parameter items.

[0074] In one embodiment, the polishing pressure of each polishing region in each reference polishing parameter item is weighted and summed to obtain the polishing pressure of each polishing region of the wafer. In the process of realizing this, the polishing pressure of multiple polishing regions in each reference polishing parameter item can be used as a matrix in the calculation.

[0075] Specifically, for the polishing pressure of polishing region Z1 in each reference polishing parameter item, the polishing pressure of polishing region Z1 is weighted and summed to obtain the polishing pressure of polishing region Z1 of the wafer, which can be achieved by the following formula:

[0076]

[0077] in, , , as well as The weights of the reference polishing parameters for the corresponding wafer number. Polishing area for the first wafer Polishing pressure, , , ,as well as These are the polishing areas of wafer number 1. Polishing pressure, polishing area of ​​wafer number 2 Polishing pressure, polishing area of ​​wafer number 3 Polishing pressure, polishing area of ​​wafer number 15 Polishing pressure.

[0078] like , The value is 0.05. According to Table 1, the following can be calculated:

[0079]

[0080] When the polishing pressure of multiple polishing regions in each reference polishing parameter can be used as a matrix in the calculation, the polishing pressure of each polishing region in each reference polishing parameter is weighted and summed. The polishing pressure of each polishing region of the wafer can be calculated using the following formula:

[0081]

[0082] in, The polishing pressure refers to the polishing pressure of each polishing area on the first identified wafer. , , ,as well as These are the polishing pressures of each polishing area of ​​wafer number 1, wafer number 2, wafer number 3, and wafer number 15, respectively.

[0083] The removal rate of the wafer is obtained by weighted summation of the removal rates for each reference polishing parameter, which can be achieved using the following formula:

[0084] ;

[0085] in, This refers to the wafer removal rate, specifically the removal rate of the first wafer. , , ,as well as The removal rates are for wafer number 1, wafer number 2, wafer number 3, and wafer number 15, respectively.

[0086] like , The value is 0.05. According to Table 1, the following can be calculated:

[0087]

[0088] In some optional embodiments of this application, when the controller is used to feed back the wafer polishing parameters to the polishing parameter library based on the wafer polishing result, it is specifically used to: feed back the wafer polishing parameters to the polishing parameter library if the wafer polishing result meets the preset requirements;

[0089] If the wafer polishing result does not meet the preset requirements, no action will be taken.

[0090] Specifically, feeding back wafer polishing parameters to the polishing parameter library may include adding the wafer polishing parameters as a polishing parameter item to the polishing parameter library.

[0091] In some optional embodiments of this application, the controller is further configured to adjust the number of reference polishing parameters. Specifically, the controller is further configured to perform the following steps S41-S42, as follows: Figure 4 As shown:

[0092] S41. In response to the fact that the number of reference polishing parameters in the reference polishing parameter information has not reached the preset number, the target parameter items are filtered from the reference polishing parameter information.

[0093] The aforementioned preset quantity can be set by relevant personnel. Ensuring that the number of reference polishing parameters in the reference polishing parameter information reaches the preset quantity can guarantee the comprehensiveness of the data used to determine the wafer polishing parameters, thereby ensuring the accuracy of the determined wafer polishing parameters.

[0094] In one embodiment, the aforementioned preset number can be 15.

[0095] S42. Expand the reference polishing parameter information using the target parameter items so that the number of reference polishing parameter items reaches the preset number.

[0096] In one embodiment, when the controller performs the aforementioned S41, that is, when filtering target parameter items from the reference polishing parameter information, it specifically selects the reference polishing parameter item whose corresponding wafer polishing result is closest to the preset requirement as the target parameter item.

[0097] The reference polishing parameter item whose corresponding wafer polishing result is closest to the preset requirement is the reference polishing parameter item with the most satisfactory and reliable wafer polishing result in the reference polishing parameter information. Using this reference polishing parameter item as the target parameter item to expand the reference polishing parameter information can make the wafer polishing result obtained by using the determined wafer polishing parameters closer to the ideal value and with higher accuracy.

[0098] In one embodiment, the weight value corresponding to each reference polishing parameter item is preset, and the number of weight values ​​is a preset quantity.

[0099] For example, if there are only 11 reference polishing parameters in the reference polishing parameter information, the reference polishing parameter that is closest to the preset requirement is selected from these 11 items. For example, the reference polishing parameter item with wafer number 1 is the target parameter item.

[0100] Accordingly, if , The value is 0.05. According to Table 1, the following can be calculated:

[0101]

[0102] The following calculations can be performed sequentially using this method: , , , , , ;

[0103]

[0104] The method described in this application for polishing the first wafer results in a thin film thickness that is closer to the target thickness and has better uniformity.

[0105] Figure 5 This diagram illustrates the thickness and uniformity of the thin film on the first wafer after polishing using existing technology. Figure 6 This is a schematic diagram showing the thickness and uniformity of the thin film on the first wafer obtained after polishing the first wafer according to the scheme of this application. Figure 5 and Figure 6 The horizontal axis represents the distance from the wafer center, the vertical axis represents the thickness value, and each dot represents a sampled value of the wafer's thin film thickness. Based on the scheme of this application, after polishing the first wafer, the thickness of the thin film on the resulting first wafer is closer to the target thickness, and the uniformity of the thin film thickness is better.

[0106] The process of polishing the first wafer based on existing technology includes the following steps S701-S706:

[0107] S701, Verify new equipment and / or replace consumables and / or change processes;

[0108] Before wafer polishing can begin, it is necessary to validate the new equipment and / or replace the consumables and / or the process. This step is to ensure the compatibility and performance of the new equipment and / or consumables and / or the new process, laying the foundation for wafer polishing. Here, "equipment" refers to the wafer processing apparatus in the existing technology.

[0109] S702, Set the target thickness and target morphology features of the thin film on the wafer;

[0110] After validating the equipment and / or replacing consumables and / or changing the process, set the target thickness and target morphology characteristics of the wafer. This step ensures that the polishing standards are set correctly during the polishing process to meet the requirements of subsequent polishing.

[0111] S703, the controller controls the first lifetime of operation;

[0112] Lifetime refers to the number of wafers that a consumable can support polishing during its lifespan, such as 500 wafers. After completing the polishing standard settings, the controller controls the completion of the first lifetime polishing process.

[0113] S704. Engineers used 50 wafers as a time interval to summarize the corresponding removal rate and polishing pressure at different stages of the wafer's lifespan. During the polishing process, they adjusted the removal rate and polishing pressure based on the consumption of consumables. When summarizing the corresponding removal rate and polishing pressure at different stages of the wafer's lifespan, wafers whose pre-polishing condition information was outside the preset pre-polishing condition range were not considered. The consumption level of consumables can be determined by the usage time of the consumables, or by the number of consumables and the number of wafers polished.

[0114] S705. After replacing consumables and / or changing the process, if the currently set removal rate or polishing pressure is not suitable, the engineer will refer to the previously summarized removal rate and polishing pressure at different stages of the lifespan, manually calculate and optimize the polishing pressure and removal rate until the polished wafer meets the preset requirements:

[0115] S706, the machine continues to operate.

[0116] While the machine continues to run, the polishing pressure and removal rate of the first wafer will not be updated automatically until an abnormality occurs, at which point the engineer will intervene.

[0117] Figure 7 This is a schematic diagram illustrating the steps of polishing a first wafer using the wafer processing apparatus proposed in this application. Specifically, the process of polishing a first wafer using the wafer processing apparatus proposed in this application includes the following steps S71-S74:

[0118] S71. Verify new equipment and / or replace consumables and / or change processes;

[0119] Before wafer polishing can begin, it is necessary to validate the new equipment and / or replace the consumables and / or the process. This step is to ensure the compatibility and performance of the new equipment and / or consumables and / or the new process, laying the foundation for wafer polishing. Here, the equipment refers to the wafer processing apparatus in the scheme of this application.

[0120] S72. Set the target thickness and target morphology features of the thin film on the wafer;

[0121] After validating the equipment and / or replacing consumables and / or changing the process, set the target thickness and target morphology characteristics of the wafer. This step ensures that the polishing standards are set correctly during the polishing process to meet the requirements of subsequent polishing.

[0122] S73, the controller controls the first lifetime of operation;

[0123] Lifetime refers to the number of wafers that a consumable can support polishing during its lifespan, such as 500 wafers. After completing the polishing standard settings, the controller controls the completion of the first lifetime polishing process.

[0124] S74. The controller controls the execution of the wafer fabrication method in this application.

[0125] In some embodiments, the controller can be an intelligent adjustment system. The solution of this application can automatically optimize the polishing pressure and removal rate of the first wafer, and can also feed back the wafer polishing parameters to the polishing parameter library based on the wafer polishing results for updating the polishing parameter library. Engineers do not need to intervene; the more wafers the machine polishes, the larger the corresponding polishing parameter library can be, and the more accurate the determination of the polishing pressure and removal rate of the first wafer will be in the next iteration.

[0126] The solution proposed in this application can automatically update the polishing parameter library and automatically determine the polishing pressure and removal rate of the first wafer, ensuring accurate and timely data and avoiding anomalies.

[0127] Please refer to Figure 8 , Figure 8This is a schematic flowchart of a wafer fabrication method provided in an embodiment of the present application. The method can be executed by a controller in the aforementioned wafer fabrication apparatus and may include the following steps S81-S83:

[0128] S81. Determine the wafer properties;

[0129] S82. Determine the wafer polishing parameters based on the wafer properties;

[0130] S83. Control the wafer polishing assembly to polish the wafer according to the wafer polishing parameters, and feed the wafer polishing parameters back to the polishing parameter library according to the wafer polishing results;

[0131] Among them, the wafer attribute is: whether the wafer is the first polishing wafer after replacing consumables and / or changing the process. Replacement consumables include any one or more of the following: replacing polishing pad, replacing polishing pad, replacing polishing head, replacing polishing fluid, and replacing dressing head.

[0132] In one embodiment, in the aforementioned S83, feeding back the wafer polishing parameters to the polishing parameter library based on the wafer polishing result includes: if the wafer polishing result meets the preset requirements, then feeding back the wafer polishing parameters to the polishing parameter library;

[0133] The preset requirements include that the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the regulations.

[0134] In one embodiment, in the aforementioned S82, determining the wafer polishing parameters of the wafer based on the wafer properties includes: if the wafer is a wafer that is being polished for the first time after replacing consumables and / or changing the process, then obtaining reference polishing parameter information from the polishing parameter library;

[0135] Based on the weight values ​​corresponding to each reference polishing parameter item in the reference polishing parameter information, the reference polishing parameter items are weighted and summed to obtain the wafer polishing parameters of the wafer;

[0136] Among them, the smaller the difference between the wafer polishing result corresponding to the reference polishing parameter item and the specified parameters in the preset requirements, the greater its corresponding weight value.

[0137] In one embodiment, the aforementioned method further includes: in response to the fact that the number of reference polishing parameters in the reference polishing parameter information does not reach a preset number, filtering target parameter items from the reference polishing parameter information;

[0138] The reference polishing parameter information is expanded using the target parameter items, so that the number of reference polishing parameter items reaches the preset number.

[0139] In one embodiment, filtering target parameter items from reference polishing parameter information includes: selecting the reference polishing parameter item whose corresponding wafer polishing result is closest to the preset requirement as the target parameter item.

[0140] The specific implementation method in this embodiment can be found in the foregoing content, and will not be repeated here.

[0141] See Figure 9 , Figure 9 This is a schematic block diagram of an electronic device provided according to an embodiment of this application. Figure 9 The electronic device 900 in this embodiment may include one or more processors 901, one or more input devices 902, one or more output devices 903, and one or more memories 904. The processors 901, input devices 902, output devices 903, and memories 904 communicate with each other via a communication bus 905. The memory 904 stores computer programs, including program instructions. The processor 901 executes the program instructions stored in the memory 904. Specifically, the processor 901 is configured to invoke the program instructions to execute the steps in the methods described above.

[0142] It should be understood that, in the embodiments of this application, the processor 901 may be a central processing unit (CPU), or it may be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor.

[0143] The memory 904 may include read-only memory and random access memory, and provides instructions and data to the processor 901. A portion of the memory 904 may also include non-volatile random access memory.

[0144] In specific implementations, the processor 901, input device 902, and output device 903 described in the embodiments of this application can execute the implementation methods described in the embodiments of this application, or they can execute the implementation methods of the electronic devices described in the embodiments of this application, which will not be repeated here.

[0145] In another embodiment of this application, a computer-readable storage medium is provided. This computer-readable storage medium stores a computer program, which includes program instructions. When executed by a processor, the program instructions implement all or part of the processes in the methods described above. Alternatively, the computer program can instruct related hardware to complete the process. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include any entity or device capable of carrying computer program code, a recording medium, a USB flash drive, a portable hard drive, a magnetic disk, an optical disk, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium, etc.

[0146] The computer-readable storage medium can be an internal storage unit of the electronic device in any of the foregoing embodiments, such as a hard disk or memory of the electronic device. The computer-readable storage medium can also be an external storage device of the electronic device, such as a plug-in hard disk, smart media card (SMC), secure digital card (SD) card, flash card, etc., equipped on the electronic device. Furthermore, the computer-readable storage medium can include both internal and external storage units of the electronic device. The computer-readable storage medium is used to store computer programs and other programs and data required by the electronic device. The computer-readable storage medium can also be used to temporarily store data that has been output or will be output.

[0147] This application provides a computer program product, which includes computer-executable instructions or a computer program. The computer-executable instructions or computer program are stored in a computer-readable storage medium. The processor of an electronic device reads the computer-executable instructions from the computer-readable storage medium and executes the computer-executable instructions, causing the electronic device to perform the methods described in the embodiments of this application.

[0148] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this application.

[0149] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the electronic devices and units described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0150] In the several embodiments provided in this application, it should be understood that the disclosed electronic devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces or units, or it may be an electrical, mechanical, or other form of connection.

[0151] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of the embodiments of this application, depending on actual needs.

[0152] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0153] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A wafer processing apparatus, characterized in that, include: A wafer polishing assembly, comprising: a polishing disk, a polishing pad, a polishing head, and a liquid supply module; The controller is used to determine the wafer properties; determine the wafer polishing parameters of the wafer based on the wafer properties; control the wafer polishing assembly to polish the wafer according to the wafer polishing parameters; and feed the wafer polishing parameters back to the polishing parameter library based on the wafer polishing results. Wherein, the wafer attribute is: whether the wafer is a wafer polished for the first time after replacing consumables and / or changing the process, and the replacement consumables include any one or more of the following: replacing the polishing pad, replacing the polishing mat, replacing the polishing head, replacing the polishing fluid, and replacing the dressing head; When the controller is used to determine the wafer polishing parameters based on the wafer properties, it is specifically used for: If the wafer is the first polished wafer after replacing consumables and / or changing the process, then the reference polishing parameter information is obtained from the polishing parameter library; Based on the weight values ​​corresponding to each reference polishing parameter item in the reference polishing parameter information, the reference polishing parameter items are weighted and summed to obtain the wafer polishing parameters of the wafer; Among them, the smaller the difference between the wafer polishing result corresponding to the reference polishing parameter item and the specified parameters in the preset requirements, the greater its corresponding weight value. In the reference polishing parameter information in the polishing parameter library, the corresponding wafer's state information before polishing needs to be within a preset state range before polishing. The state information includes the thickness of the wafer thin film and the morphological characteristics of the wafer.

2. The apparatus as claimed in claim 1, characterized in that, The controller, when used to feed back the wafer polishing parameters to the polishing parameter library based on the wafer polishing result, is specifically used to: if the wafer polishing result meets the preset requirements, then feed back the wafer polishing parameters to the polishing parameter library; The preset requirements include that the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the specified requirements.

3. The apparatus as described in claim 1, characterized in that, The controller is also used for: In response to the fact that the number of reference polishing parameters in the reference polishing parameter information does not reach a preset number, target parameter items are filtered from the reference polishing parameter information; The reference polishing parameter information is expanded using the target parameter items so that the number of reference polishing parameter items reaches a preset number.

4. The apparatus as described in claim 3, characterized in that, When the controller is used to filter target parameter items from the reference polishing parameter information, it is specifically used for: Select the reference polishing parameter item whose wafer polishing result is closest to the preset requirement from the reference polishing parameter information as the target parameter item.

5. A wafer fabrication method, characterized in that, A controller suitable for use in any one of claims 1-4 wafer fabrication apparatus, comprising: Determine the wafer properties; The wafer polishing parameters are determined based on the wafer properties; The wafer is polished according to the stated wafer polishing parameters, and the wafer polishing parameters are fed back to the polishing parameter library based on the wafer polishing results; The wafer attribute is: whether the wafer is a wafer that is being polished for the first time after replacing consumables and / or changing the process, and the replacement consumables include any one or more of the following: replacing the polishing disc, replacing the polishing pad, replacing the polishing head, replacing the polishing fluid, and replacing the dressing head.

6. The method as described in claim 5, characterized in that, The step of feeding back the wafer polishing parameters to the polishing parameter library based on the wafer polishing result includes: if the wafer polishing result meets the preset requirements, then feeding back the wafer polishing parameters to the polishing parameter library; The preset requirements include that the thickness of the thin film on the wafer surface and the morphological characteristics of the wafer meet the specified requirements.

7. An electronic device comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method as described in any one of claims 5-6.

8. A computer storage medium, characterized in that, It stores a computer program that, when executed by a processor, implements the steps of the method as described in any one of claims 5-6.

9. A computer program product, characterized in that, Includes computer instructions that instruct a computing device to perform the steps of the method as described in any one of claims 5-6.

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