High linearity low noise amplifier with current detection function and method

Abstract

The application provides a high-linearity low-noise amplifier with a current detection function and a method, and belongs to the technical field of integrated circuits.The high-linearity low-noise amplifier comprises an input matching module, a gate-source feedback stacked amplification module connected with the input matching module, an off-chip inductor feeding module, a negative feedback module, a source biasing module connected with the off-chip inductor feeding module, a passive biasing module and an output matching module connected with the gate-source feedback stacked amplification module, an operational amplification module connected with the output matching module, and a logic shaping module connected with the operational amplification module.The application solves the problem that the existing amplifier cannot simultaneously realize high linearity and low noise while performing current abnormality alarm.

Description

Technical Field

[0001] This invention belongs to the field of integrated circuit technology, and particularly relates to a high linearity, low noise amplifier and method with current detection function. Background Technology

[0002] With the continuous development of modern communication technology, the demand for ultra-high linearity amplifier chips has increased significantly in the highly demanding communication and civilian fields. In communications where signal quality and anti-interference capabilities are extremely critical, there is an urgent need for high-performance and high-reliability wireless communication equipment. In the civilian communication field, especially with the application of 5G micro base stations, the demand for high-performance and high-reliability wireless communication equipment is also growing rapidly. Therefore, developing a low-noise ultra-high linearity amplifier chip that meets these requirements is crucial for improving the performance of communication systems.

[0003] Ultra-high linearity amplifiers have high power consumption. When the operating current of an ultra-high linearity amplifier is abnormal, its performance will also be abnormal, causing the base station system to fail to perform. Therefore, the reliability of ultra-high linearity amplifiers is very important for base station systems. Summary of the Invention

[0004] To address the aforementioned shortcomings in the prior art, this invention provides a high-linearity, low-noise amplifier and method with current detection function, which solves the problem that existing ultra-high linearity amplifiers cannot simultaneously achieve high linearity and low noise while providing current anomaly alarms.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows: On the one hand, a high linearity low noise amplifier with current detection function is provided, including: an input matching module, a gate-source feedback stacked amplification module, an off-chip inductor feeding module, and a negative feedback module, all connected to the input matching module; a source bias module connected to the off-chip inductor feeding module; a passive bias module and an output matching module connected to the gate-source feedback stacked amplification module; an operational amplification module connected to the output matching module; and a logic shaping module connected to the operational amplification module.

[0006] The active bias module is also connected to the passive bias module, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module; the active bias module is connected to the gate-source feedback stacked amplification module through an off-chip inductor power supply module; the passive bias module is also connected to the negative feedback module and the output matching module; the negative feedback module is also connected to the gate-source feedback stacked amplification module.

[0007] Furthermore, the input matching module is used to accept the input signal of the high linearity low noise amplifier;

[0008] The off-chip inductor power supply module is used to reduce noise by utilizing a high-Q inductor to actively bias the gate-source feedback stacked amplifier module.

[0009] The active bias module is used to provide an active bias to the gate-source feedback stacked amplification module;

[0010] The passive bias module is used to provide passive bias to the gate-source feedback stacked amplification module;

[0011] The gate-source feedback stacked amplification module is used to perform high-linearity processing and amplification on the noise-reduced input signal to obtain the gate-source feedback amplified signal.

[0012] The negative feedback module is used to perform negative feedback processing on the gate-source feedback amplified signal to obtain a high linearity and low noise signal;

[0013] The output matching module is used to receive a high linearity, low noise signal and obtain the voltage across the matching inductor by providing an input voltage to the operational amplifier module, thereby acquiring the voltage difference of the matching inductor.

[0014] The operational amplifier module is used to amplify the voltage across the output matching module using a preset MOS transistor, based on the voltage difference of the matching inductor and the characteristics of the logic shaping circuit, to obtain a detection signal.

[0015] The logic shaping module is used to compare and judge the voltage of the detection signal and shape it. In response to the acquisition of the current detection output signal, it performs an alarm through a high linearity low noise amplifier, thus completing the high linearity low noise amplification with current detection function.

[0016] The beneficial effects of the present invention are as follows: The present invention achieves high linearity and low noise in a high linearity and low noise amplifier by using active bias, negative feedback, common source and common gate feedback and off-chip high Q inductor feeding. Furthermore, by setting up an operational amplification module and a logic shaping module on two layers of the output matching module, the voltage difference across the matching inductor is amplified and shaped to achieve high-precision current detection.

[0017] The noise figure of the high-linearity, low-noise amplifier is reduced by using external inductors and capacitors for power supply. A common-source, common-gate amplifier is used, with active bias inductor power supply and a negative feedback module to achieve high linearity. On-chip inductors are used for output matching, and voltage detection is achieved by combining the matching inductor with the operational amplifier module. An alarm for abnormal current output of the high-linearity, low-noise amplifier is achieved through a logic shaping module.

[0018] Furthermore, the input matching module includes: a grounding matching capacitor C1 and a DC blocking capacitor C2;

[0019] The grounding matching capacitor C1 is connected to the input terminal RFIN of the high linearity low noise amplifier and one end of the DC blocking capacitor C2; the other end of the DC blocking capacitor C2 is connected to the off-chip inductor feeding module, the gate-source feedback stacked amplifier module and the negative feedback module respectively.

[0020] The off-chip inductor power supply module includes: a series inductor L1 and a grounding capacitor C3;

[0021] One end of the series inductor L1 is connected to the other end of the DC blocking capacitor C2, the gate-source feedback stacked amplification module, and the negative feedback module, respectively; the other end of the series inductor L1 is connected to the grounding capacitor C3 and the active bias module, respectively.

[0022] The active bias module includes: transistor M3, resistor R1, resistor R2, and grounding resistor R3;

[0023] One end of resistor R2 is connected to the other end of series inductor L1 and grounding capacitor C3 respectively; the other end of resistor R2 is connected to the gate of transistor M3, the drain of transistor M3 and one end of resistor R1 respectively; the source of transistor M3 is connected to grounding resistor R3; the other end of resistor R1 is connected to passive bias module, gate-source feedback stacked amplification module, negative feedback module and output matching module respectively.

[0024] The beneficial effects of the above-mentioned further solutions are as follows: By combining the active bias of the external inductor-fed, the gate-source feedback stacked amplifier module can operate at a stable bias point. At the same time, the gate-source feedback stacked amplifier module also has low noise. The static bias point of the gate-source feedback stacked amplifier module remains stable when the operating temperature of the gate-source feedback stacked amplifier module changes, ensuring that the high linearity low noise amplifier can operate stably.

[0025] Furthermore, the passive bias module includes: resistor R4, resistor R5, grounding resistor R6, and grounding capacitor C4;

[0026] One end of resistor R5 is connected to the other end of resistor R1, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module, respectively; the other end of resistor R5 is connected to grounding resistor R6, one end of resistor R4, and the gate-source feedback stacked amplification module, respectively; the other end of resistor R4 is connected to one end of grounding capacitor C4;

[0027] The gate-source feedback stacked amplification module includes: transistor M1 and transistor M2;

[0028] The gate of transistor M1 is connected to the other end of capacitor C2, one end of series inductor L1, and the negative feedback module; the source of transistor M1 is grounded; the drain of transistor M1 is connected to the source of transistor M2; the gate of transistor M2 is connected to one end of resistor R4, the other end of resistor R5, and grounding resistor R6; the drain of transistor M2 is connected to the other end of resistor R1, one end of resistor R5, the negative feedback module, and the output matching module.

[0029] Furthermore, the negative feedback module includes: resistor R7 and capacitor C5;

[0030] One end of resistor R7 is connected to the gate of transistor M1, the other end of capacitor C2, and one end of series inductor L1; the other end of resistor R7 is connected to one end of capacitor C5; the other end of capacitor C5 is connected to the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the output matching module.

[0031] The output matching module includes: a high linearity low noise amplifier output matching inductor L2 and a grounding matching capacitor C6;

[0032] One end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier is connected to the other end of capacitor C5, the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the operational amplifier module.

[0033] The other end Vin1 of the high linearity low noise amplifier output matching inductor L2 is connected to one end of the choke inductor L3, the operational amplifier module and the high linearity low noise amplifier output RFOUT, respectively.

[0034] The other end of the choke inductor L3 is connected to VDD.

[0035] The beneficial effects of the above-mentioned further solutions are as follows: By setting up a gate-source feedback stacked amplification module and performing high linearity processing through negative feedback, the present invention improves the linearity of the high linearity low noise amplifier, enabling the high linearity low noise amplifier to remain undistorted under high input signal conditions, while ensuring that the high linearity low noise amplifier has low noise.

[0036] Furthermore, the operational amplification module specifically includes:

[0037] Resistors R8, R9, R10, R11, grounding resistor R12, R13, R14, R15, grounding capacitor C7, transistors M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22, M23, M24, M32, grounding capacitor C8, capacitor C9, resistors R16 and R17, diodes D1 and D2;

[0038] One end of the resistor R8 is connected to one end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier. The other end of the resistor R8 is connected to one end of the resistor R10 and the grounding resistor R12. The other end of the resistor R10 is connected to the grounding resistor R14, the grounding capacitor C8 and the operational amplifier input Vp.

[0039] One end of resistor R9 is connected to the other end Vin1 of the high linearity low noise amplifier output matching inductor L2. The other end of resistor R9 is connected to one end of resistor R11 and grounding resistor R13. The other end of resistor R11 is connected to grounding capacitor C7 and operational amplifier input Vn. The operational amplifier input Vn is connected to one end of resistor R15, and the other end of resistor R15 is connected to operational amplifier output Vout.

[0040] The operational amplifier input Vn is connected to the gate of transistor M16. The source of transistor M16 is connected to the drain of transistor M17 and the source of transistor M18. The drain of transistor M16 is connected to the drain of transistor M13, the gate of transistor M13, the gate of transistor M14, the gate of transistor M15, the drain of transistor M15, the drain of transistor M18, one end of capacitor C9, the cathode of diode D1, and the gate of transistor M19.

[0041] The source of transistor M13 is connected to VDD, the source of transistor M4, the drain of transistor M14, the source of transistor M14, the source of transistor M15, and the source of transistor M19, respectively.

[0042] The gate of transistor M18 is connected to the operational amplifier input Vp; the drain of transistor M19 is connected to the source of transistor M20; the drain of transistor M20 is connected to the source of transistor M21; the gate of transistor M20 is connected to the drain of transistor M5, the gate of transistor M5, the gate of transistor M22, the source of transistor M6, and the gate of transistor M6, respectively; the drain of transistor M21 is connected to one end of resistor R16, one end of resistor R17, the drain of transistor M22, and the operational amplifier output Vout, respectively; the gate of transistor M21 is connected to the current source, the drain of transistor M9, the gate of transistor M9, the gate of transistor M11, the gate of transistor M17, and the gate of transistor M23, respectively.

[0043] The other end of the capacitor C9 is connected to the other end of the resistor R16, the positive terminal of the diode D1 is connected to the negative terminal of the diode D2, and the positive terminal of the diode D2 is connected to the other end of the resistor R17.

[0044] The source of transistor M22 is connected to the drain of transistor M23; the source of transistor M23 is connected to the drain of transistor M24; the gate of transistor M24 is connected to the source of transistor M9, the drain of transistor M10, the gate of transistor M10, the gate of transistor M12, and the gate of transistor M32, respectively; the source of transistor M24 is connected to the source of transistor M10, the source of transistor M12, and the source of transistor M32, respectively, and grounded.

[0045] The source of transistor M17 is connected to the drain of transistor M32; the source of transistor M11 is connected to the drain of transistor M12.

[0046] The drain of transistor M4 is connected to the gate of transistor M4 and the source of transistor M5, respectively; the drain of transistor M6 is connected to the gate of transistor M7 and the source of transistor M7, respectively; the drain of transistor M7 is connected to the gate of transistor M8 and the source of transistor M8, respectively; the drain of transistor M8 is connected to the drain of transistor M11.

[0047] The operational amplifier output Vout is connected to the logic shaping module.

[0048] The beneficial effects of the above-mentioned further solutions are as follows: the present invention amplifies the small voltage difference on the matching inductor to obtain a larger output voltage difference through an operational amplifier, and uses a differential amplifier cascaded with a common-source amplifier to provide a higher open-loop amplification gain. The differential amplifier provides a higher common-mode rejection ratio. The small input voltage difference on the matching inductor is passed through a high-gain operational amplifier to obtain a larger output voltage difference.

[0049] Furthermore, the logic shaping module includes: resistor R18, grounding resistor R19, grounding resistor R20, grounding resistor R21, grounding resistor R22, grounding resistor R23, grounding resistor R24, grounding resistor R25, grounding resistor R26, resistor R27, grounding resistor R28, grounding resistor R29, transistor M25, transistor M26, transistor M27, transistor M28, transistor M29, transistor M30, and transistor M31;

[0050] One end of the resistor R18 is connected to the operational amplifier output Vout, and the other end of the resistor R18 is connected to the ground resistor R19 and the gate of the transistor M25.

[0051] The source of transistor M25 is grounded, and the drain of transistor M25 is connected to one end of resistor R29, grounding resistor R20, and the gate of transistor M27, respectively; the other end of resistor R29 is connected to VDD.

[0052] One end of the resistor R27 is connected to the operational amplifier output Vout, and the other end of the resistor R27 is connected to the ground resistor R28 and the gate of the transistor M26, respectively.

[0053] The source of transistor M26 is grounded, and the drain of transistor M26 is connected to one end of resistor R21, grounding resistor R22, and the gate of transistor M28, respectively; the other end of resistor R21 is connected to VDD.

[0054] The source of transistor M27 is grounded, and the drain of transistor M27 is connected to one end of resistor R23 and the gate of transistor M29, respectively; the other end of resistor R23 is connected to VDD.

[0055] The source of transistor M28 is grounded, and the drain of transistor M28 is connected to one end of resistor R24 ​​and the gate of transistor M31, respectively; the other end of resistor R24 ​​is connected to VDD.

[0056] The source of transistor M29 is grounded, and the drain of transistor M29 is connected to one end of resistor R25 and the gate of transistor M30, respectively; the other end of resistor R25 is connected to VDD.

[0057] The source of transistor M30 is connected to the drain of transistor M31, and the drain of transistor M30 is connected to one end of resistor R26 and the current detection output Vdet; the other end of resistor R26 is connected to VDD.

[0058] The source of the transistor M31 is grounded.

[0059] The beneficial effects of the above-mentioned further solutions are as follows: the present invention completes voltage difference comparison and logic operation through logic shaping circuit, and completes current detection output through logic shaping module.

[0060] On the other hand, a high-linearity, low-noise amplification method with current detection function is provided, comprising the following steps:

[0061] S1. Receives the input signal from the high linearity low noise amplifier and preprocesses it using an off-chip inductor power supply module to obtain a noise-reduced input signal;

[0062] S2. The noise-reduced input signal is processed and amplified with high linearity using the gate-source feedback stacked amplification module. By providing active and passive bias, a stable operating point is provided for the gate-source feedback stacked amplification module to obtain the gate-source feedback amplified signal.

[0063] Among them, the active bias comes from the active bias module, and the passive bias comes from the passive bias module;

[0064] S3. The gate-source feedback amplified signal is subjected to negative feedback processing to obtain a high linearity and low noise signal, which is then received by the output matching module to obtain the voltage across the matching inductor.

[0065] S4. Calculate the voltage difference across the matching inductor by measuring the voltage across the two ends of the matching inductor, and provide the input voltage to the operational amplifier module based on the output matching module. According to the voltage difference across the matching inductor and the characteristics of the logic shaping circuit, amplify the voltage across the two ends of the matching inductor using a preset MOS transistor to obtain the detection signal.

[0066] S5. The detection signal is compared and logically operated through the logic shaping module to obtain the output signal, and then alarmed through the high linearity low noise amplifier to complete the high linearity low noise amplification with current detection function.

[0067] The beneficial effects of the above-mentioned further solutions are as follows: The present invention achieves high linearity and low noise in a high linearity and low noise amplifier by using active and passive bias, negative feedback, common source and common gate feedback and inductor feeding. Furthermore, by setting up an operational amplification module and a logic shaping module on two layers of the output matching module, the voltage difference across the matching inductor is amplified, compared and logically shaped, and alarm is triggered by the high linearity and low noise amplifier, thus achieving high-precision current detection. Attached Figure Description

[0068] Figure 1 This is a structural diagram of the high linearity, low noise amplifier with current detection function of the present invention.

[0069] Figure 2 This is the schematic diagram of the low-noise, high-linearity amplifier circuit in this embodiment.

[0070] Figure 3This is a circuit diagram of the off-chip inductor power supply module and the active bias module in this embodiment.

[0071] Figure 4 This is the external circuit schematic of the operational amplifier module in this embodiment.

[0072] Figure 5 This is a schematic diagram of the internal circuit of the operational amplifier module in this embodiment.

[0073] Figure 6 This is a simulation result diagram of the operational amplifier module in this embodiment.

[0074] Figure 7 This is the circuit schematic of the logic shaping module in this embodiment.

[0075] Figure 8 This is a simulation result diagram of the logic shaping module circuit in this embodiment.

[0076] Figure 9 This is a flowchart of the method in this embodiment. Detailed Implementation

[0077] The specific embodiments of the present invention are described below to enable those skilled in the art to understand the present invention. However, it should be understood that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, various changes are obvious as long as they are within the spirit and scope of the present invention as defined and determined by the appended claims. All inventions utilizing the concept of the present invention are protected.

[0078] Before describing this embodiment, the following terms will be explained:

[0079] Cascode amplifier: a common-source, common-gate amplifier;

[0080] Q value: Quality factor.

[0081] Example 1

[0082] like Figure 1 As shown, the present invention provides a high linearity, low noise amplifier with current detection function, comprising:

[0083] The input matching module, the gate-source feedback stacked amplifier module connected to the input matching module, the off-chip inductor power supply module, the negative feedback module, the source bias module connected to the off-chip inductor power supply module, the passive bias module connected to the gate-source feedback stacked amplifier module, the output matching module, the operational amplifier module connected to the output matching module, and the logic shaping module connected to the operational amplifier module.

[0084] The active bias module is also connected to the passive bias module, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module; the active bias module is connected to the gate-source feedback stacked amplification module through an off-chip inductor power supply module; the passive bias module is also connected to the negative feedback module and the output matching module; the negative feedback module is also connected to the gate-source feedback stacked amplification module.

[0085] In this embodiment, the input matching module is connected to the gate-source feedback stacked amplification module, the off-chip inductor power supply module, and the negative feedback module, respectively; the off-chip inductor power supply module is connected to the active bias module; the active bias module is connected to the passive bias module, the output matching module, the gate-source feedback stacked amplification module, and the negative feedback module, respectively; the output matching module is connected to the operational amplification module; and the operational amplification module is connected to the logic shaping module.

[0086] The purpose of this invention is to provide a high-linearity, low-noise amplifier with current detection. It achieves ultra-high linearity through an active bias module, a negative feedback module, and a gate-source feedback stacked amplification module structure. Ultra-low noise is achieved by using an off-chip high-Q inductor for power supply. The output matching module uses inductor matching, the operational amplifier module amplifies the voltage difference across the matching inductor, and the logic shaping module shapes the output of the operational amplifier module. It outputs a high level for abnormal current and a low level for normal operation, thus implementing an abnormal current alarm function.

[0087] like Figure 2 As shown, the input matching module is used to accept the input signal of the high linearity low noise amplifier, and specifically includes: a ground matching capacitor C1 and a DC blocking capacitor C2;

[0088] The grounding matching capacitor C1 is connected to the input terminal RFIN of the high linearity low noise amplifier and one end of the DC blocking capacitor C2; the other end of the DC blocking capacitor C2 is connected to the off-chip inductor feeding module, the gate-source feedback stacked amplifier module and the negative feedback module respectively.

[0089] like Figure 3 As shown, the off-chip inductor power supply module is used to reduce noise by utilizing a high-Q inductor to the active bias of the gate-source feedback stacked amplifier module, specifically including: series inductor L1 and grounding capacitor C3.

[0090] One end of the series inductor L1 is connected to the other end of the DC blocking capacitor C2, the gate-source feedback stacked amplification module, and the negative feedback module, respectively; the other end of the series inductor L1 is connected to the grounding capacitor C3 and the active bias module, respectively.

[0091] The active bias module is used to provide active bias to the gate-source feedback stacked amplification module, and specifically includes: transistor M3, resistor R1, resistor R2 and grounding resistor R3;

[0092] One end of resistor R2 is connected to the other end of series inductor L1 and grounding capacitor C3 respectively; the other end of resistor R2 is connected to the gate of transistor M3, the drain of transistor M3 and one end of resistor R1 respectively; the source of transistor M3 is connected to grounding resistor R3; the other end of resistor R1 is connected to passive bias module, gate-source feedback stacked amplification module, negative feedback module and output matching module respectively.

[0093] In this embodiment, the active bias module provides a stable DC bias operating point for the amplifier, preventing changes in the operating temperature from causing changes in the bias point of the high linearity low noise amplifier. This ensures that the high linearity low noise amplifier can maintain stable performance under different temperature environments. The external inductor feeding module connects the gate-source feedback stacked amplifier modules. Through the external high-Q inductor in the external inductor feeding module, the bias terminal to the gate RF equivalent open circuit of the gate-source feedback stacked amplifier module reduces the noise figure of the high linearity low noise amplifier, thereby achieving low noise.

[0094] The passive bias module is used to provide passive bias to the gate-source feedback stacked amplification module, and specifically includes: resistor R4, resistor R5, grounding resistor R6 and grounding capacitor C4.

[0095] One end of resistor R5 is connected to the other end of resistor R1, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module, respectively; the other end of resistor R5 is connected to grounding resistor R6, one end of resistor R4, and the gate-source feedback stacked amplification module, respectively; the other end of resistor R4 is connected to one end of grounding capacitor C4.

[0096] The gate-source feedback stacked amplification module is used to perform high linearity processing and amplification on the noise-reduced input signal to obtain the gate-source feedback amplified signal, and specifically includes: transistor M1 and transistor M2;

[0097] The gate of transistor M1 is connected to the other end of capacitor C2, one end of series inductor L1, and the negative feedback module; the source of transistor M1 is grounded; the drain of transistor M1 is connected to the source of transistor M2; the gate of transistor M2 is connected to one end of resistor R4, the other end of resistor R5, and grounding resistor R6; the drain of transistor M2 is connected to the other end of resistor R1, one end of resistor R5, the negative feedback module, and the output matching module.

[0098] The negative feedback module is used to perform negative feedback processing on the gate-source feedback amplified signal to obtain a high linearity and low noise signal, and specifically includes: resistor R7 and capacitor C5;

[0099] One end of the resistor R7 is connected to the gate of transistor M1, the other end of capacitor C2, and one end of series inductor L1; the other end of the resistor R7 is connected to one end of capacitor C5; the other end of capacitor C5 is connected to the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the output matching module.

[0100] In this embodiment, the gate-source feedback stacked amplifier module adopts a Cascode architecture. With the bias provided by the active bias module and the passive bias module, a stable operating point is provided for the gate-source feedback stacked amplifier module, ensuring that the operating current fluctuation of the high linearity low noise amplifier is small at different temperatures.

[0101] The output matching module is used to receive a high linearity low noise signal and obtain the voltage across the matching inductor by providing an input voltage to the operational amplifier module, thereby obtaining the voltage difference of the matching inductor. Specifically, it includes: the high linearity low noise amplifier output matching inductor L2 and the grounding capacitor C6.

[0102] One end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier is connected to the other end of capacitor C5, the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the operational amplifier module.

[0103] The other end Vin1 of the high linearity low noise amplifier output matching inductor L2 is connected to one end of the choke inductor L3, the operational amplifier module and the high linearity low noise amplifier output RFOUT, respectively.

[0104] The other end of the choke inductor L3 is connected to VDD.

[0105] In this embodiment, the output matching module includes a series matching inductor L2 and a parallel capacitor, which improves the linearity of the high linearity low noise amplifier, while also improving the standing wave ratio and gain of the high linearity low noise amplifier.

[0106] In this embodiment, the operational amplifier module is used to amplify the voltage across the output matching module using a preset MOSFET based on the voltage difference of the matching inductor and the characteristics of the logic shaping circuit, to obtain a detection signal. The operational amplifier module includes external circuitry and internal circuitry, specifically including:

[0107] Resistors R8, R9, R10, R11, grounding resistor R12, R13, R14, R15, grounding capacitor C7, transistors M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22, M23, M24, M32, grounding capacitor C8, capacitor C9, resistors R16 and R17, diodes D1 and D2;

[0108] like Figure 4 In the external circuit shown, one end of resistor R8 is connected to one end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier. The other end of resistor R8 is connected to one end of resistor R10 and grounding resistor R12. The other end of resistor R10 is connected to grounding resistor R14, grounding capacitor C8 and operational amplifier input Vp.

[0109] One end of resistor R9 is connected to the other end Vin1 of the high linearity low noise amplifier output matching inductor L2. The other end of resistor R9 is connected to one end of resistor R11 and grounding resistor R13. The other end of resistor R11 is connected to grounding capacitor C7 and operational amplifier input Vn. The operational amplifier input Vn is connected to one end of resistor R15, and the other end of resistor R15 is connected to operational amplifier output Vout.

[0110] In this embodiment, as Figure 5 In the internal circuit shown, the operational amplifier input Vn is connected to the gate of transistor M16, the source of transistor M16 is connected to the drain of transistor M17 and the source of transistor M18, and the drain of transistor M16 is connected to the drain of transistor M13, the gate of transistor M13, the gate of transistor M14, the gate of transistor M15, the drain of transistor M15, the drain of transistor M18, one end of capacitor C9, the cathode of diode D1, and the gate of transistor M19.

[0111] The source of transistor M13 is connected to VDD, the source of transistor M4, the drain of transistor M14, the source of transistor M14, the source of transistor M15, and the source of transistor M19, respectively.

[0112] The gate of transistor M18 is connected to the operational amplifier input Vp; the drain of transistor M19 is connected to the source of transistor M20; the drain of transistor M20 is connected to the source of transistor M21; the gate of transistor M20 is connected to the drain of transistor M5, the gate of transistor M5, the gate of transistor M22, the source of transistor M6, and the gate of transistor M6, respectively; the drain of transistor M21 is connected to one end of resistor R16, one end of resistor R17, the drain of transistor M22, and the operational amplifier output Vout, respectively; the gate of transistor M21 is connected to the current source, the drain of transistor M9, the gate of transistor M9, the gate of transistor M11, the gate of transistor M17, and the gate of transistor M23, respectively.

[0113] The other end of the capacitor C9 is connected to the other end of the resistor R16, the positive terminal of the diode D1 is connected to the negative terminal of the diode D2, and the positive terminal of the diode D2 is connected to the other end of the resistor R17.

[0114] The source of transistor M22 is connected to the drain of transistor M23; the source of transistor M23 is connected to the drain of transistor M24; the gate of transistor M24 is connected to the source of transistor M9, the drain of transistor M10, the gate of transistor M10, the gate of transistor M12, and the gate of transistor M32, respectively; the source of transistor M24 is connected to the source of transistor M10, the source of transistor M12, and the source of transistor M32, respectively, and grounded.

[0115] The source of transistor M17 is connected to the drain of transistor M32; the source of transistor M11 is connected to the drain of transistor M12.

[0116] The drain of transistor M4 is connected to the gate of transistor M4 and the source of transistor M5, respectively; the drain of transistor M6 is connected to the gate of transistor M7 and the source of transistor M7, respectively; the drain of transistor M7 is connected to the gate of transistor M8 and the source of transistor M8, respectively; the drain of transistor M8 is connected to the drain of transistor M11.

[0117] The operational amplifier output Vout is connected to the logic shaping module.

[0118] In this embodiment, the input of the operational amplifier module is connected to the matching inductor L2 for input and output. Since the matching inductor L2 has internal resistance, there is a certain voltage difference across the inductor when the high linearity low noise amplifier is working. The magnitude of the voltage difference is determined by the internal resistance of the matching inductor and the operating current of the high linearity low noise amplifier. The gain of the operational amplifier module is designed based on the voltage difference of the matching inductor and the characteristics of the logic shaping circuit.

[0119] The operational amplifier employs a differential amplifier cascaded with a common-source amplifier, providing high open-loop gain. The differential amplifier offers high common-mode rejection ratio. The small input voltage difference across the matching inductor, after passing through the high-gain operational amplifier, results in a larger output voltage difference, which is ultimately output to the logic shaping circuit. The operational amplifier schematic is shown below. Figure 4 and Figure 5 As shown, in the operational amplifier, R8=R9, R12=R13, R10=R11, R14=R15, and the amplifier gain is as follows:

[0120] Operational amplifier closed-loop gain: ;

[0121] Simulation results of the operational amplifier are as follows Figure 6 As shown, VM is the voltage difference across the matching inductor. When the operating current of the low-noise, high-linearity amplifier changes, VM also changes. The curve of the operational amplifier output voltage versus VM is shown below. Figure 6 As shown.

[0122] In this embodiment, the logic shaping module is used to compare and judge the detection signal and shape it. In response to acquiring the current detection output signal, it uses a high-linearity, low-noise amplifier to generate an alarm, thus completing the high-linearity, low-noise amplification with current detection function. Figure 7 As shown, specifically including: resistor R18, grounding resistor R19, grounding resistor R20, grounding resistor R21, grounding resistor R22, grounding resistor R23, grounding resistor R24, grounding resistor R25, grounding resistor R26, resistor R27, grounding resistor R28, grounding resistor R29, transistor M25, transistor M26, transistor M27, transistor M28, transistor M29, transistor M30, and transistor M31;

[0123] One end of resistor R18 is connected to the operational amplifier output Vout, and the other end of resistor R18 is connected to ground resistor R19 and the gate of transistor M25 respectively.

[0124] The source of transistor M25 is grounded, and the drain of transistor M25 is connected to one end of resistor R29, grounding resistor R20, and the gate of transistor M27, respectively; the other end of resistor R29 is connected to VDD.

[0125] One end of resistor R27 is connected to the operational amplifier output Vout, and the other end of resistor R27 is connected to ground resistor R28 and the gate of transistor M26, respectively.

[0126] The source of transistor M26 is grounded, and the drain of transistor M26 is connected to one end of resistor R21, grounding resistor R22, and the gate of transistor M28, respectively; the other end of resistor R21 is connected to VDD.

[0127] The source of transistor M27 is grounded, and the drain of transistor M27 is connected to one end of resistor R23 and the gate of transistor M29, respectively; the other end of resistor R23 is connected to VDD.

[0128] The source of transistor M28 is grounded, and the drain of transistor M28 is connected to one end of resistor R24 ​​and the gate of transistor M31, respectively; the other end of resistor R24 ​​is connected to VDD.

[0129] The source of transistor M29 is grounded, and the drain of transistor M29 is connected to one end of resistor R25 and the gate of transistor M30, respectively; the other end of resistor R25 is connected to VDD.

[0130] The source of transistor M30 is connected to the drain of transistor M31, and the drain of transistor M30 is connected to one end of resistor R26 and the current detection output Vdet; the other end of resistor R26 is connected to VDD.

[0131] The source of the transistor M31 is grounded.

[0132] In this embodiment, the logic shaping module compares the output voltage of the operational amplifier module and performs logic operations. When the voltage deviates from the normal operating current of the high linearity low noise amplifier, it outputs a high level as an alarm.

[0133] Preset 4 voltage levels: V1, V2, V3, and V4;

[0134] Transistors M26 and M28 are used to determine if the operational amplifier output Vout is less than v4. If Vout is less than v4, M28 outputs a high level; if Vout is greater than v4, M28 outputs a low level. Transistors M25, M27, and M29 are used to determine if the operational amplifier output Vout is greater than v1. If Vout is greater than v1, M29 outputs a high level; if Vout is less than v1, M29 outputs a low level. Transistors M30 and M31 are used to perform logic operations. If both transistors M28 and M29 output a low level, the current detection output Vdet outputs a high level. If at least one of transistors M29 and M28 outputs a low level, the current detection output Vdet outputs a high level.

[0135] If the normal operating current is not deviated, a high linearity and low noise signal is obtained through a normal operating high linearity and low noise amplifier with current detection function.

[0136] The differential voltage signal Vout, amplified by the operational amplifier, is output to the logic shaping circuit. When the high-linearity low-noise amplifier is working normally, v2 < Vout < v3, and the logic shaping module outputs a low voltage. When the current of the high-linearity low-noise amplifier is abnormally low, the operational amplifier outputs a higher differential voltage, i.e., Vout > v4, and the logic shaping module outputs a high voltage for abnormal current alarm. When the current of the high-linearity low-noise amplifier is abnormally low, the operational amplifier outputs a lower differential voltage, i.e., Vout < v1, and the logic shaping circuit outputs a high level for abnormal current alarm. The simulation results of the actual logic shaping module circuit are as follows: Figure 8 As shown, the functions are as follows:

[0137] When Vout < v1 or Vout > v4, the logic shaping module outputs a high level;

[0138] When v2 < Vout < v3, the logic shaping module outputs a low level.

[0139] In this embodiment, the key wiring diagram of the high linearity low noise amplifier with current detection function is shown in Tables 1 and 2.

[0140] Table 1

[0141]

[0142] Table 2

[0143]

[0144] Example 2

[0145] In this embodiment, as shown... Figure 9 As shown, this invention provides a high linearity, low noise amplification method with current detection function, applied to a high linearity, low noise amplifier with current detection function as described in Example 1. The implementation method is as follows:

[0146] S1. Receives the input signal from the high linearity low noise amplifier and preprocesses it using an off-chip inductor power supply module to obtain a noise-reduced input signal;

[0147] S2. The noise-reduced input signal is processed and amplified with high linearity using the gate-source feedback stacked amplification module. By providing active and passive bias, a stable operating point is provided for the gate-source feedback stacked amplification module to obtain the gate-source feedback amplified signal.

[0148] Among them, the active bias comes from the active bias module, and the passive bias comes from the passive bias module;

[0149] S3. The gate-source feedback amplified signal is subjected to negative feedback processing to obtain a high linearity and low noise signal, which is then received by the output matching module to obtain the voltage across the matching inductor.

[0150] S4. Calculate the voltage difference across the matching inductor by measuring the voltage across its terminals. Then, based on the output matching module, provide the input voltage to the operational amplifier module. According to the voltage difference across the matching inductor and the characteristics of the logic shaping circuit, amplify the voltage across the matching inductor using a preset MOSFET to obtain the detection signal.

[0151] In this embodiment, the output matching of the high linearity low noise amplifier includes a series inductor. The voltage difference across the matching inductor varies with different operating currents of the high linearity low noise amplifier. Since the matching inductor is small, the voltage difference across the inductor is also small. The operational amplifier linearly amplifies the voltage difference. The operational amplifier uses a differential amplifier cascaded with a common source amplifier, which can provide higher gain and amplify the small voltage difference across the matching inductor.

[0152] S5. The detection signal is compared and logically operated through the logic shaping module to obtain the output signal, and then alarmed through the high linearity low noise amplifier to complete the high linearity low noise amplification with current detection function.

[0153] In this embodiment, the logic shaping module compares and performs logic operations on the output voltage difference of the operational amplifier. If the output voltage difference of the operational amplifier is within the voltage difference range corresponding to normal operation, a low level is output. If the output voltage difference of the operational amplifier exceeds the voltage difference range corresponding to normal operation, a high level is output. Based on the low and high levels of the output, an output signal is obtained. If the output signal is high, an alarm is triggered by a high-linearity, low-noise amplifier.

[0154] In this embodiment, as Figure 7 As shown, the high linearity and low noise amplification method with current detection function provided in the embodiment can implement the technical solution shown in the above system embodiment 1. Its implementation principle and beneficial effects are similar, and will not be repeated here.

[0155] In this embodiment of the invention, the high linearity, low noise amplification method with current detection function, in order to achieve the principle and beneficial effects of the system embodiment 1 described above, includes hardware structures and / or software modules corresponding to each function. Those skilled in the art should readily recognize that, in conjunction with the illustrative modules and algorithm steps described in the embodiments disclosed herein, the present invention can be implemented in hardware and / or a combination of hardware and computer software. Whether a function is executed by hardware or computer software depends on the specific application and design constraints of the technical solution. Different methods can be used to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

Claims

1. A high-linearity, low-noise amplifier with current detection function, characterized in that, include: The input matching module, the gate-source feedback stacked amplifier module connected to the input matching module, the off-chip inductor power supply module, the negative feedback module, the active bias module connected to the off-chip inductor power supply module, the passive bias module connected to the gate-source feedback stacked amplifier module, the output matching module, the operational amplifier module connected to the output matching module, and the logic shaping module connected to the operational amplifier module. The active bias module is also connected to the passive bias module, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module; the active bias module is connected to the gate-source feedback stacked amplification module via an off-chip inductor power supply module; the passive bias module is also connected to the negative feedback module and the output matching module; the negative feedback module is also connected to the gate-source feedback stacked amplification module. The input matching module is used to accept the input signal from the high linearity low noise amplifier; The off-chip inductor power supply module is used to reduce noise by utilizing a high-Q inductor to actively bias the gate-source feedback stacked amplifier module. The active bias module is used to provide an active bias to the gate-source feedback stacked amplification module; The passive bias module is used to provide passive bias to the gate-source feedback stacked amplification module; The gate-source feedback stacked amplification module is used to perform high-linearity processing and amplification on the noise-reduced input signal to obtain the gate-source feedback amplified signal. The negative feedback module is used to perform negative feedback processing on the gate-source feedback amplified signal to obtain a high linearity and low noise signal; The output matching module is used to receive a high linearity, low noise signal and obtain the voltage across the matching inductor by providing an input voltage to the operational amplifier module, thereby acquiring the voltage difference of the matching inductor. The operational amplifier module is used to amplify the voltage across the output matching module using a preset MOS transistor, based on the voltage difference of the matching inductor and the characteristics of the logic shaping circuit, to obtain a detection signal. The logic shaping module is used to compare and judge the voltage of the detection signal and shape it. In response to the acquisition of the current detection output signal, it performs an alarm through a high linearity low noise amplifier, thus completing the high linearity low noise amplification with current detection function.

2. The high-linearity, low-noise amplifier with current detection function according to claim 1, characterized in that, The input matching module includes: a grounding matching capacitor C1 and a DC blocking capacitor C2; The grounding matching capacitor C1 is connected to the input terminal RFIN of the high linearity low noise amplifier and one end of the DC blocking capacitor C2; the other end of the DC blocking capacitor C2 is connected to the off-chip inductor feeding module, the gate-source feedback stacked amplifier module and the negative feedback module respectively. The off-chip inductor power supply module includes: a series inductor L1 and a grounding capacitor C3; One end of the series inductor L1 is connected to the other end of the DC blocking capacitor C2, the gate-source feedback stacked amplification module, and the negative feedback module, respectively; the other end of the series inductor L1 is connected to the grounding capacitor C3 and the active bias module, respectively. The active bias module includes: transistor M3, resistor R1, resistor R2, and grounding resistor R3; One end of resistor R2 is connected to the other end of series inductor L1 and grounding capacitor C3 respectively; the other end of resistor R2 is connected to the gate of transistor M3, the drain of transistor M3 and one end of resistor R1 respectively; the source of transistor M3 is connected to grounding resistor R3; the other end of resistor R1 is connected to passive bias module, gate-source feedback stacked amplification module, negative feedback module and output matching module respectively.

3. The high-linearity, low-noise amplifier with current detection function according to claim 2, characterized in that, The passive bias module includes: resistor R4, resistor R5, grounding resistor R6, and grounding capacitor C4; One end of resistor R5 is connected to the other end of resistor R1, the gate-source feedback stacked amplification module, the negative feedback module, and the output matching module, respectively; the other end of resistor R5 is connected to grounding resistor R6, one end of resistor R4, and the gate-source feedback stacked amplification module, respectively; the other end of resistor R4 is connected to one end of grounding capacitor C4; The gate-source feedback stacked amplification module includes: transistor M1 and transistor M2; The gate of transistor M1 is connected to the other end of capacitor C2, one end of series inductor L1, and the negative feedback module; the source of transistor M1 is grounded; the drain of transistor M1 is connected to the source of transistor M2; the gate of transistor M2 is connected to one end of resistor R4, the other end of resistor R5, and grounding resistor R6; the drain of transistor M2 is connected to the other end of resistor R1, one end of resistor R5, the negative feedback module, and the output matching module.

4. The high-linearity, low-noise amplifier with current detection function according to claim 3, characterized in that, The negative feedback module includes: resistor R7 and capacitor C5; One end of resistor R7 is connected to the gate of transistor M1, the other end of capacitor C2, and one end of series inductor L1; the other end of resistor R7 is connected to one end of capacitor C5; the other end of capacitor C5 is connected to the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the output matching module. The output matching module includes: a high linearity low noise amplifier output matching inductor L2 and a grounding matching capacitor C6; One end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier is connected to the other end of capacitor C5, the drain of transistor M2, the other end of resistor R1, one end of resistor R5, and the operational amplifier module. The other end Vin1 of the high linearity low noise amplifier output matching inductor L2 is connected to one end of the choke inductor L3, the operational amplifier module and the high linearity low noise amplifier output RFOUT, respectively. The other end of the choke inductor L3 is connected to VDD.

5. The high-linearity, low-noise amplifier with current detection function according to claim 4, characterized in that, The operational amplifier module specifically includes: resistors R8, R9, R10, R11, grounding resistors R12, R13, R14, and R15, grounding capacitor C7, transistors M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15, M16, M17, M18, M19, M20, M21, M22, M23, M24, and M32, grounding capacitor C8, capacitor C9, resistors R16 and R17, diode D1, and diode D2; One end of the resistor R8 is connected to one end Vin0 of the output matching inductor L2 of the high linearity low noise amplifier. The other end of the resistor R8 is connected to one end of the resistor R10 and the grounding resistor R12. The other end of the resistor R10 is connected to the grounding resistor R14, the grounding capacitor C8 and the operational amplifier input Vp. One end of resistor R9 is connected to the other end Vin1 of the high linearity low noise amplifier output matching inductor L2. The other end of resistor R9 is connected to one end of resistor R11 and grounding resistor R13. The other end of resistor R11 is connected to grounding capacitor C7 and operational amplifier input Vn. The operational amplifier input Vn is connected to one end of resistor R15, and the other end of resistor R15 is connected to operational amplifier output Vout. The operational amplifier input Vn is connected to the gate of transistor M16. The source of transistor M16 is connected to the drain of transistor M17 and the source of transistor M18. The drain of transistor M16 is connected to the drain of transistor M13, the gate of transistor M13, the gate of transistor M14, the gate of transistor M15, the drain of transistor M15, the drain of transistor M18, one end of capacitor C9, the cathode of diode D1, and the gate of transistor M19. The source of transistor M13 is connected to VDD, the source of transistor M4, the drain of transistor M14, the source of transistor M14, the source of transistor M15, and the source of transistor M19, respectively. The gate of transistor M18 is connected to the operational amplifier input Vp; the drain of transistor M19 is connected to the source of transistor M20; the drain of transistor M20 is connected to the source of transistor M21; the gate of transistor M20 is connected to the drain of transistor M5, the gate of transistor M5, the gate of transistor M22, the source of transistor M6, and the gate of transistor M6, respectively; the drain of transistor M21 is connected to one end of resistor R16, one end of resistor R17, the drain of transistor M22, and the operational amplifier output Vout, respectively; the gate of transistor M21 is connected to the current source, the drain of transistor M9, the gate of transistor M9, the gate of transistor M11, the gate of transistor M17, and the gate of transistor M23, respectively. The other end of the capacitor C9 is connected to the other end of the resistor R16, the positive terminal of the diode D1 is connected to the negative terminal of the diode D2, and the positive terminal of the diode D2 is connected to the other end of the resistor R17. The source of transistor M22 is connected to the drain of transistor M23; the source of transistor M23 is connected to the drain of transistor M24; the gate of transistor M24 is connected to the source of transistor M9, the drain of transistor M10, the gate of transistor M10, the gate of transistor M12, and the gate of transistor M32, respectively; the source of transistor M24 is connected to the source of transistor M10, the source of transistor M12, and the source of transistor M32, respectively, and grounded. The source of transistor M17 is connected to the drain of transistor M32; the source of transistor M11 is connected to the drain of transistor M12. The drain of transistor M4 is connected to the gate of transistor M4 and the source of transistor M5, respectively; the drain of transistor M6 is connected to the gate of transistor M7 and the source of transistor M7, respectively; the drain of transistor M7 is connected to the gate of transistor M8 and the source of transistor M8, respectively; the drain of transistor M8 is connected to the drain of transistor M11. The operational amplifier output Vout is connected to the logic shaping module.

6. The high-linearity, low-noise amplifier with current detection function according to claim 5, characterized in that, The logic shaping module includes: resistor R18, grounding resistor R19, grounding resistor R20, grounding resistor R21, grounding resistor R22, grounding resistor R23, grounding resistor R24, grounding resistor R25, grounding resistor R26, resistor R27, grounding resistor R28, grounding resistor R29, transistor M25, transistor M26, transistor M27, transistor M28, transistor M29, transistor M30, and transistor M31; One end of the resistor R18 is connected to the operational amplifier output Vout, and the other end of the resistor R18 is connected to the ground resistor R19 and the gate of the transistor M25. The source of transistor M25 is grounded, and the drain of transistor M25 is connected to one end of resistor R29, grounding resistor R20, and the gate of transistor M27, respectively; the other end of resistor R29 is connected to VDD. One end of the resistor R27 is connected to the operational amplifier output Vout, and the other end of the resistor R27 is connected to the ground resistor R28 and the gate of the transistor M26, respectively. The source of transistor M26 is grounded, and the drain of transistor M26 is connected to one end of resistor R21, grounding resistor R22, and the gate of transistor M28, respectively; the other end of resistor R21 is connected to VDD. The source of transistor M27 is grounded, and the drain of transistor M27 is connected to one end of resistor R23 and the gate of transistor M29, respectively; the other end of resistor R23 is connected to VDD. The source of transistor M28 is grounded, and the drain of transistor M28 is connected to one end of resistor R24 ​​and the gate of transistor M31, respectively; the other end of resistor R24 ​​is connected to VDD. The source of transistor M29 is grounded, and the drain of transistor M29 is connected to one end of resistor R25 and the gate of transistor M30, respectively; the other end of resistor R25 is connected to VDD. The source of transistor M30 is connected to the drain of transistor M31, and the drain of transistor M30 is connected to one end of resistor R26 and the current detection output Vdet; the other end of resistor R26 is connected to VDD. The source of the transistor M31 is grounded.

7. A high-linearity, low-noise amplification method with current detection function, applied to the high-linearity, low-noise amplifier with current detection function as described in any one of claims 1-6, characterized in that, Includes the following steps: S1. Receives the input signal from the high linearity low noise amplifier and preprocesses it using an off-chip inductor power supply module to obtain a noise-reduced input signal; S2. The noise-reduced input signal is processed and amplified with high linearity using the gate-source feedback stacked amplification module. By providing active and passive bias, a stable operating point is provided for the gate-source feedback stacked amplification module to obtain the gate-source feedback amplified signal. Among them, the active bias comes from the active bias module, and the passive bias comes from the passive bias module; S3. The gate-source feedback amplified signal is subjected to negative feedback processing to obtain a high linearity and low noise signal, which is then received by the output matching module to obtain the voltage across the matching inductor. S4. Calculate the voltage difference across the matching inductor by measuring the voltage across the two ends of the matching inductor, and provide the input voltage to the operational amplifier module based on the output matching module. According to the voltage difference across the matching inductor and the characteristics of the logic shaping circuit, amplify the voltage across the two ends of the matching inductor using a preset MOS transistor to obtain the detection signal. S5. The detection signal is compared and logically operated by the logic shaping module to obtain the current detection output signal, and then alarm is generated by the high linearity low noise amplifier to complete the high linearity low noise amplification with current detection function.

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