Vacuum in-situ measurement method and device for atomic oxygen flux and atomic oxygen denudation rate

Abstract

The invention provides a vacuum in-situ measurement method and device for atomic oxygen flux and atomic oxygen denudation rate. The atomic oxygen flux measurement method comprises the following steps: covering a dielectric material with a known atomic oxygen denudation rate on a resistor; measuring the atomic oxygen flux of the dielectric material covering the resistance piece in an atomic oxygen environment until the dielectric material is completely denudated and the resistance is changed, and measuring the resistance change caused by the reaction of the dielectric material and atomic oxygen to obtain the atomic oxygen flux of the atomic oxygen environment; determining the complete denudation time of the dielectric material according to the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistor is greater than a specified value; and calculating the atomic oxygen flux of the atomic oxygen environment according to the determined complete denudation time of the dielectric material. The method for measuring the atomic oxygen denudation rate and the atomic oxygen flux, which is convenient, light, low in cost and low in power consumption, can be provided for low-orbit and ultra-low-orbit spacecrafts.

Description

Technical Field

[0001] This application relates to the field of space environment engineering technology, and more specifically, to a vacuum in-situ measurement method and apparatus for atomic oxygen flux and atomic oxygen ablation rate. Background Technology

[0002] In low Earth orbit (200 km–700 km), oxygen molecules in the residual atmospheric gases dissociate into atomic oxygen under the ultraviolet light of the sun. Atomic oxygen is chemically much more reactive than molecular oxygen, and since spacecraft in orbit typically travel at speeds of around 8 km / s, the kinetic energy of collisions with atomic oxygen is approximately 5.3 eV. The exceptionally intense high-temperature oxidation reaction, combined with the erosive effect of high-speed collisions with atomic oxygen on the spacecraft surface, will cause severe erosion. Therefore, atomic oxygen is considered the most dangerous environmental factor in low Earth orbit. Thus, research and detection of the space atomic oxygen environment are essential.

[0003] Existing methods for measuring atomic oxygen flux density include mass spectrometry, physical sample methods, and quartz crystal microbalance methods. However, mass spectrometers are too large and heavy, physical sample methods cannot provide long-term real-time measurement results, and quartz crystal microbalance methods have limited measurement lifespan and are not suitable for long-term measurements in a vacuum environment.

[0004] Vacuum in-situ measurement of atomic oxygen reaction rate is usually performed by coating the test material with a quartz crystal microbalance. Because the detection is based on the direct proportionality between the frequency change and the mass change of the quartz crystal, the deposited film must be rigid and have a small mass. The rigidity of the deposited film means that it must be coated or sputtered rather than simply pasted onto the wafer, resulting in a complex process. The small mass of the deposited film makes the measurement process complicated, the volume large, the lifespan short, and the price expensive, making it unsuitable for high-frequency applications.

[0005] Therefore, it is necessary to provide a vacuum in-situ measurement method and apparatus for atomic oxygen flux and atomic oxygen erosion rate to solve one of the above-mentioned technical problems. Summary of the Invention

[0006] The purpose of this application is to provide a vacuum in-situ measurement method, apparatus, medium, and electronic device for atomic oxygen flux and atomic oxygen ablation rate, which can solve at least one of the aforementioned technical problems. The specific solution is as follows:

[0007] According to a specific embodiment of this application, this application provides a vacuum in-situ measurement method for atomic oxygen flux, comprising: covering a resistive element with a dielectric material having a known atomic oxygen erosion rate; measuring the atomic oxygen flux of the dielectric material covering the resistive element in an atomic oxygen environment until the dielectric material is completely eroded and its resistance changes, wherein the resistance change caused by the reaction of the dielectric material with atomic oxygen is measured to obtain the atomic oxygen flux of the atomic oxygen environment; determining the time when the dielectric material is completely eroded based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element is greater than a specified value; and calculating the atomic oxygen flux of the atomic oxygen environment based on the determined time when the dielectric material is completely eroded.

[0008] According to a specific embodiment of this application, this application also provides a vacuum in-situ measurement method for atomic oxygen ablation rate, comprising: measuring the atomic oxygen ablation rate of a test material covered on a resistive element in an atomic oxygen environment; waiting until the test material is completely ablated and the resistance changes; wherein, the resistance change caused by the reaction between the test material and atomic oxygen is measured to obtain the atomic oxygen ablation rate of the test material; when the atomic oxygen ablation rate measurement begins, the resistance value of the resistive element is measured; when the measured resistance value of the resistive element is greater than a specified value, the atomic oxygen ablation rate test is completed; determining the time when the test material is completely ablated based on the start time of the atomic oxygen ablation rate measurement and the end time when the resistance value of the resistive element is greater than the specified value; and calculating the atomic oxygen ablation rate of the test material based on the time when the test material is completely ablated.

[0009] According to specific embodiments of this application, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in any of the preceding claims.

[0010] According to specific embodiments of this application, this application also provides an electronic device, including: one or more processors; and a storage device for storing one or more programs, which, when executed by the one or more processors, cause the one or more processors to perform the method described in any of the preceding claims.

[0011] Compared with the prior art, the above-described solutions of this application have at least the following beneficial effects:

[0012] This application measures the atomic oxygen flux of a dielectric material covering a resistive element in an atomic oxygen environment. Once the dielectric material is completely eroded, the resistance changes, i.e., the resistance change caused by the reaction between the dielectric material and atomic oxygen is measured. Based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element exceeds a specified value, the time when the dielectric material is completely eroded can be determined. Based on the determined time when the dielectric material is completely eroded, the atomic oxygen flux of the atomic oxygen environment can be calculated.

[0013] Furthermore, by automatically measuring the resistance value of a resistive element during the atomic oxygen ablation rate measurement process, the atomic oxygen source is shut off when the measured resistance value of the resistive element exceeds a specified value, thereby stopping the atomic oxygen ablation rate measurement. Based on the start time of the atomic oxygen ablation rate measurement and the time when the resistance value of the resistive element exceeds the specified value, the time when the material under test is completely ablated can be accurately determined. This allows for precise calculation of the atomic oxygen ablation rate, enabling more effective in-situ vacuum testing and more efficient evaluation of the durability of the material under test (e.g., conductive materials on satellite surfaces) in a low Earth orbit (LEO) atomic oxygen environment. Attached Figure Description

[0014] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings:

[0015] Figure 1 This is a flowchart illustrating an example of the in-situ vacuum measurement method for atomic oxygen flux according to an embodiment of this application.

[0016] Figure 2 This is a structural example diagram from an angle of an application example of the atomic oxygen flux vacuum in-situ measurement method according to the embodiments of this application;

[0017] Figure 3 This is a structural example diagram from another angle of an application example of the atomic oxygen flux vacuum in-situ measurement method according to the embodiments of this application;

[0018] Figure 4 This is a schematic diagram of resistance change in an application example of the in-situ vacuum measurement method for atomic oxygen flux according to the embodiments of this application;

[0019] Figure 5 This is a flowchart illustrating an example of a vacuum in-situ measurement method for atomic ablation rate according to an embodiment of this application.

[0020] Figure 6This is a structural block diagram of an application example of the vacuum in-situ testing device based on resistance change and atomic oxygen ablation of this application;

[0021] Figure 7 This is a schematic diagram of the electronic device structure shown in an embodiment of this application. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0023] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the application. The singular forms “a,” “said,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms, and “multiple” generally includes at least two unless the context clearly indicates otherwise.

[0024] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0025] It should be understood that although the terms first, second, third, etc., may be used in the embodiments of this application, these descriptions should not be limited to these terms. These terms are only used to distinguish the descriptions. For example, first may also be referred to as second without departing from the scope of the embodiments of this application, and similarly, second may also be referred to as first.

[0026] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the article or device that includes said element.

[0027] In view of the above problems, this application provides a vacuum in-situ measurement method for atomic oxygen flux. This method involves covering a resistive element with a dielectric material having a known atomic oxygen erosion rate, measuring the atomic oxygen flux of the dielectric material covered on the resistive element in an atomic oxygen environment, and measuring the resistance change caused by the reaction between the dielectric material and atomic oxygen after the dielectric material is completely eroded. The time when the dielectric material is completely eroded is determined based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element exceeds a specified value. The atomic oxygen flux in the atomic oxygen environment is calculated based on the determined time when the dielectric material is completely eroded.

[0028] Furthermore, atomic oxygen ablation rate measurements are performed on the test material covering the resistive element to complete the ablation of the test material. Once the test material is completely ablated, a change in resistance is observed. The resistance change caused by the reaction between the dielectric material and atomic oxygen is measured. Based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element exceeds a specified value, the time when the test material is completely ablated is determined. The atomic oxygen ablation rate of the test material is calculated based on the determined time of complete ablation. This application enables a more efficient evaluation of the durability of test materials (e.g., conductive materials on satellite surfaces) in a low Earth orbit (LEO) atomic oxygen environment.

[0029] This application provides a convenient, lightweight, inexpensive, and low-power vacuum in-situ measurement method for atomic oxygen flux and atomic oxygen erosion rate for low-Earth orbit and ultra-low-Earth orbit spacecraft, improving automation and practicality.

[0030] It should be noted that the measurement method of this application has a wide range of applications, especially suitable for measuring the in-situ atomic oxygen flux and atomic oxygen erosion rate of spacecraft in orbit. It can also be used to measure the in-situ atomic oxygen erosion rate and the in-situ atomic oxygen flux of atomic oxygen devices in ground simulation equipment, and can also be used to measure other parameters of ground simulation equipment.

[0031] Example 1

[0032] The following is combined Figures 1 to 4 The optional embodiments of the method of this application are described in detail.

[0033] like Figure 1 As shown, in step S101, a dielectric material with a known atomic oxygen erosion rate is applied to the resistive element.

[0034] Specifically, the dielectric material includes a space thin-film insulating material, and the resistive element of the atomic oxygen flux measuring device includes silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

[0035] exist Figure 2In one example, an atomic oxygen flux measurement device (including a resistive element) is placed in situ within a vacuum chamber or in a space environment. A dielectric material is mounted on the resistive element of the atomic oxygen flux measurement device such that the dielectric material covers the resistive element, and the dielectric material is a satellite conductive material (e.g., a polyimide film) so that the dielectric material and the resistive element are electrically connected.

[0036] Specifically, a dielectric material of a certain thickness (e.g., a polyimide film) is coated onto the resistive element, and then placed in an atomic oxygen environment (e.g., in a vacuum chamber) Figure 3 The gray U-shaped object in the image represents the dielectric material, used to perform or conduct atomic oxygen flux measurements on the dielectric material covering the resistive element.

[0037] In one specific embodiment, for example, after the atomic oxygen flux measuring device is exposed to an atomic oxygen environment, the resistive element is protected by the covering dielectric material, and its resistance remains unchanged. When the covering dielectric material is completely eroded away, the resistive element begins to erode, and its resistance value changes. Soon, the resistive element is completely eroded, and the circuit is broken. The thickness of the dielectric material is known, and the resistance remains unchanged until the circuit is broken, thus completing the atomic oxygen flux measurement.

[0038] Specifically, the in-situ measurement device for atomic oxygen ablation rate uses a silver film resistor as a sensor (also known as a silver film resistance sensor). The silver film resistor, or resistive film, is fabricated on a PCB board, with a thickness of approximately 40 nm. The structure of the silver film resistance sensor chip is symmetrical, as shown in the diagram. Figure 3 As described above. For example, the resistor wire is 0.5mm wide, the middle resistor wire is 6mm long, and the two outer resistor wires are 5mm long. Each end of the resistor wire is connected to a solder pad, for example, a 3mm x 4mm solder pad.

[0039] When the silver film thickness is 40nm, the width is 0.5mm, and the length is 16mm, the resistance of the silver resistance wire can be 19Ω.

[0040] It should be noted that in this application, the atomic oxygen erosion rate measurement device uses a silver film resistive atomic oxygen sensor. The principle is as follows: a dielectric material is covered on the silver film resistive sensor, which is then placed in an atomic oxygen environment for erosion testing. The above is merely an optional example and should not be construed as a limitation of this application.

[0041] Next, in step S102, the atomic oxygen flux of the dielectric material covering the resistive element is measured in an atomic oxygen environment. When the dielectric material is completely eroded and the resistance changes, the resistance change caused by the reaction of the dielectric material with atomic oxygen is measured to obtain the atomic oxygen flux in the atomic oxygen environment.

[0042] Specifically, atomic oxygen flux is measured in situ within a vacuum chamber or in a space environment. An atomic oxygen flux measurement device is specifically deployed within the vacuum chamber or in the space environment to perform the measurement. The resistance value of the resistive element within the atomic oxygen flux measurement device is measured in real time.

[0043] A resistance meter installed inside the vacuum chamber is used to measure the resistance value of a resistive element in real time. The time when the atomic oxygen flux measurement begins, the start and end times of changes in the resistance element, the time when the resistance exceeds a specified value, and the time when the dielectric material and the resistive element break the circuit are recorded to determine the time when the dielectric material is completely eroded. The specified value is in the range of 20 MΩ to 100 MΩ.

[0044] Furthermore, when the resistance measuring device measures a resistance value greater than a specified value (e.g., a specified value of 20 MΩ), the atomic oxygen source is turned off, and the atomic oxygen flux measurement is completed.

[0045] In this example, the resistive element of the atomic oxygen flux measuring device is protected by a dielectric material, and its resistance remains constant. However, when the covering dielectric material is completely eroded away by atomic oxygen, the resistive element begins to be eroded by atomic oxygen. At this point, the resistance value changes (for example, a sharp increase occurs at a certain point in time, eventually leading to an open circuit; see details). Figure 4 When the resistor is completely stripped, the circuit is broken. At this point, the resistor acts as a switching signal indicating the completion of the dielectric material erosion, thus linking the change in resistance of the resistor to the complete erosion of the dielectric material.

[0046] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0047] Next, in step S103, the time when the dielectric material is completely eroded is determined based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element is greater than a specified value.

[0048] The time when the dielectric material is completely eroded is determined based on the start time t1 of the recorded atomic oxygen flux measurement and the end time t2 when the resistance value of the resistive element is greater than a specified value (e.g., 20 MΩ).

[0049] Specifically, a controller is also installed outside the vacuum chamber. The controller is used to control the resistance measuring device to measure the resistance value of the circuit under test in real time (specifically including the resistance value of the dielectric material and the resistance value of the resistive element). The controller is also used to control the start and end of the atomic oxygen flux measurement.

[0050] The complete erosion time of the dielectric material is expressed by the following expression:

[0051] t = t2 - t1 (1)

[0052] Where t represents the time during which the dielectric material is completely eroded during the atomic oxygen flux measurement process in the current atomic oxygen environment; t1 represents the start time of the atomic oxygen flux measurement; and t2 represents the time when the resistance value of the resistive element is greater than the specified value.

[0053] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0054] Next, in step S104, the atomic oxygen flux of the atomic oxygen environment is calculated based on the determined time when the medium material is completely eroded.

[0055] The atomic oxygen flux in an atomic oxygen environment is calculated using the following expression:

[0056]

[0057] in, The atomic oxygen flux in the atomic oxygen environment, expressed in atoms / cm². 2 E t 'Indicates the atomic oxygen ablation rate of the dielectric material used for atomic oxygen flux measurement, in cm. 3 / atom;t is the time in seconds during which the medium material used for atomic oxygen flux measurement is completely eroded;h is the thickness of the medium material used for atomic oxygen flux measurement in μm.

[0058] Based on the measured change in electrical conductivity and the amount of recoil atoms caused by the collision between the test material and atomic oxygen particles, corresponding calculations or analyses are performed.

[0059] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0060] Compared with the prior art, this application covers a dielectric material with a known atomic oxygen erosion rate onto a resistive element, and measures the atomic oxygen flux of the dielectric material covering the resistive element in an atomic oxygen environment. When the dielectric material is completely eroded, the resistance changes, and the resistance change caused by the reaction between the dielectric material and atomic oxygen is measured. Based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element is greater than a specified value, the time when the dielectric material is completely eroded is determined. Based on the determined time when the dielectric material is completely eroded, the atomic oxygen flux of the atomic oxygen environment is calculated.

[0061] Example 2

[0062] The following is combined Figure 5 The optional embodiments of the method of this application are described in detail.

[0063] like Figure 5 As shown, this application also provides a vacuum in-situ measurement method for atomic oxygen erosion rate, which includes the following steps.

[0064] In step S201, the atomic oxygen erosion rate of the test material covering the resistive element is measured in an atomic oxygen environment. When the test material is completely eroded, the resistance changes. The atomic oxygen erosion rate of the test material is obtained by measuring the resistance change caused by the reaction between the test material and atomic oxygen.

[0065] Specifically, the material to be tested includes a space thin-film insulating material. The resistive element of the atomic oxygen ablation rate measuring device is made of materials including silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

[0066] In one example, a resistor is placed in situ within a vacuum chamber or in a space environment, and a material under test (DUT) is mounted on the resistor such that the DUT covers the resistor. The DUT is a satellite-conductive material (e.g., a polyimide film), allowing the DUT to be electrically connected to the resistor.

[0067] Specifically, a material to be tested (e.g., a polyimide film) of a certain thickness is mounted on an atomic oxygen reaction rate measuring device (specifically, a resistive element), and placed in the atomic oxygen environment of a vacuum chamber. (See also...) Figure 3 In this example, the material to be tested is... Figure 3 A medium gray U-shaped object is used to perform or conduct atomic oxygen ablation rate measurements on the test material covered on a resistive element.

[0068] In this example, the resistive element is a silver film resistive sensor.

[0069] In one specific embodiment, for example, after the measuring device is exposed to an atomic oxygen environment, the resistive element is protected by the test material covering it, and its resistance remains unchanged. When the test material is completely eroded away by atomic oxygen, the resistive element begins to erode, its resistance value changes, and soon the resistive element is completely eroded, resulting in an open circuit. The thickness of the test material covering it is known, and the resistance remains constant until the circuit is broken. The atomic oxygen accumulation flux received by the test material covering it during this time can be measured, thereby obtaining the atomic oxygen erosion rate of the test material.

[0070] Specifically, the in-situ measurement device for atomic oxygen ablation rate uses a resistive element as a sensor (also known as a silver film resistive sensor). A silver film resistor, or resistive film, is fabricated on a PCB board, with a thickness of approximately 40 nm. The structure of the silver film resistive sensor is symmetrical. For example, the resistance line width is 0.5 mm, the middle resistance line is 6 mm long, and the two outer resistance lines are 5 mm long. Each end of the resistance line is connected to a pad, for example, a 3 mm × 4 mm pad.

[0071] When the silver film thickness is 40nm, the width is 0.5mm, and the length is 16mm, the resistance of the silver resistive wire can be calculated to be 19Ω.

[0072] It should be noted that in this application, the atomic oxygen erosion rate measurement device uses a silver film resistive atomic oxygen sensor. The principle is as follows: the material to be tested is covered on the silver film resistive sensor and placed in an atomic oxygen environment for parameter measurement. The above is merely an optional example and should not be construed as a limitation of this application.

[0073] Next, in step S202, when the atomic oxygen erosion rate measurement is started, the resistance value of the resistive element is measured. When the measured resistance value of the resistive element is greater than a specified value, the atomic oxygen erosion rate test is completed.

[0074] Specifically, the atomic oxygen ablation rate measurement is performed on the material to be tested within a vacuum chamber.

[0075] A resistance measuring device installed inside a vacuum chamber is used to measure the resistance value of the resistive element in real time. The time when the atomic oxygen ablation rate measurement begins, the start and end times of changes in the resistance element, the time when the resistance exceeds a specified value, and the time when the test material and the resistive element break the circuit are recorded to determine the complete ablation time of the test material. The specified value is in the range of 20MΩ to 100MΩ.

[0076] Furthermore, when the resistance measuring device measures a resistance value greater than a specified value (e.g., a specified value of 20 MΩ), the atomic oxygen source is turned off to complete the atomic oxygen erosion rate measurement.

[0077] In this example, the resistive element of the atomic oxygen reaction rate measuring device is protected by the test material, and its resistance remains constant. However, once the test material is completely etched away by atomic oxygen, the resistive element begins to be etched away as well. At this point, the resistance value changes (e.g., a sharp increase occurs at a certain point in time, eventually leading to an open circuit). When the resistive element is completely etched away, the circuit is broken. In this case, the resistive element acts as a switching signal indicating the completion of the test material etch, thus correlating the change in resistance of the resistive element with the complete etching of the test material.

[0078] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0079] Next, in step S203, the time when the material under test is completely eroded is determined based on the start time of the atomic oxygen ablation rate measurement and the end time when the resistance value of the resistive element is greater than a specified value.

[0080] In one specific embodiment, the measuring device is placed in the atomic oxygen irradiation area of ​​the atomic oxygen equipment, the atomic oxygen source is turned on to perform atomic oxygen ablation rate measurement, the atomic oxygen irradiation start time t1' is recorded, when the resistance value of the circuit under test is greater than a specified value (e.g. 20MΩ), the current time t2' is recorded, and the atomic oxygen source is turned off, that is, the atomic oxygen irradiation is stopped or the atomic oxygen ablation rate measurement is stopped, thereby completing the complete ablation of the material under test.

[0081] Specifically, a controller is also installed outside the vacuum chamber. The controller is used to control the resistance measuring device to measure the resistance value of the circuit under test in real time (specifically including the resistance value of the material under test and the resistance value of the resistive element). The controller is also used to control the start and stop of atomic oxygen irradiation of the atomic oxygen source.

[0082] The time it takes for the material under test to be completely eroded is expressed by the following expression:

[0083] t'=t2'-t1' (3)

[0084] Where t represents the complete erosion time of the material under test in the current atomic oxygen erosion rate measurement; t1' represents the start time of the atomic oxygen erosion rate measurement, i.e. the start time of atomic oxygen irradiation; and t2' represents the time when the resistance value of the resistive element is greater than the specified value.

[0085] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0086] Next, in step S204, the atomic oxygen ablation rate of the test material is calculated based on the time it takes for the test material to be completely ablated.

[0087] The atomic ablation rate of the test material is calculated using the following expression:

[0088]

[0089] Among them, E t This represents the atomic oxygen erosion rate of the material under test, calculated using the current atomic oxygen erosion rate measurement, in cm. 3 / atom;t' represents the complete erosion time of the material under test as measured by the atomic oxygen erosion rate, in seconds; This refers to atomic oxygen flux density, expressed in atoms / cm².2 ·s;h' represents the thickness of the sample to be tested, in μm.

[0090] For example, the atomic oxygen reactivity of a certain polyimide is calculated, and the calculated atomic oxygen reactivity (e.g., 9.06 × 10⁻⁶) is used. -25 cm 3 / AO) is used as the atomic oxygen erosion rate.

[0091] Based on the change in resistance of the atomic oxygen erosion rate measuring device caused by the reaction between the test material and atomic oxygen particles, relevant calculations or analyses are performed.

[0092] It should be noted that the above is only an optional example and should not be construed as a limitation of this application.

[0093] Compared with existing technologies, this application automatically measures the resistance value of a resistive element during the atomic oxygen ablation rate measurement process. When the measured resistance value of the resistive element is greater than a specified value, the atomic oxygen source is turned off to complete the atomic oxygen ablation rate measurement. Based on the start time of the atomic oxygen ablation rate measurement and the time when the resistance value of the resistive element is greater than the specified value, the time when the test material is completely ablated can be accurately determined. Based on the determined time when the test material is completely ablated, the atomic oxygen ablation rate can be accurately calculated, enabling more effective in-situ vacuum testing and more efficient evaluation of the durability of test materials (e.g., conductive materials on satellite surfaces) in the atomic oxygen environment of low Earth orbit (LEO).

[0094] This application also provides apparatus embodiments that follow the above embodiments, for implementing the method steps described in the above embodiments. The interpretation of the same names is the same as that in the above embodiments, and they have the same technical effects as those in the above embodiments, so they will not be repeated here.

[0095] Reference Figure 6 This application provides a vacuum in-situ testing device 500, which is used to perform the vacuum in-situ measurement method of atomic oxygen flux described in Example 1 or the vacuum in-situ measurement method of atomic oxygen erosion rate described in Example 2.

[0096] like Figure 6 As shown, the vacuum in-situ testing device 500 includes a measuring probe 510, a resistance measuring device 520, an automatic processing module 530, and a calculation processing module 540.

[0097] Specifically, the measuring probe 510 is used to measure the material under test covered by the resistive element within the vacuum chamber, or to measure the resistive element within the vacuum chamber. The resistance measuring device 520 automatically measures the resistance value of the resistive element when the atomic oxygen flux vacuum in-situ measurement or the atomic oxygen ablation rate vacuum in-situ measurement begins. When the measured resistance value of the resistive element exceeds a specified value, the atomic oxygen flux vacuum in-situ measurement or the atomic oxygen ablation rate vacuum in-situ measurement is stopped. The automatic processing module 530 determines the time when the relevant material is completely ablated based on the start time of the atomic oxygen flux vacuum in-situ measurement or the start time of the atomic oxygen ablation rate vacuum in-situ measurement, and the time when the resistance value of the resistive element exceeds the specified value. The calculation processing module 540 performs parameter calculations based on the determined time when the relevant material is completely ablated.

[0098] In one alternative embodiment, atomic oxygen flux measurement is performed in situ within a vacuum chamber or in a space environment. An atomic oxygen flux measurement device is deployed within the vacuum chamber or in the space environment. The resistance value of the atomic oxygen flux measurement device is measured in real time, and the start time of the atomic oxygen flux measurement, the start time and end time of any changes in the atomic oxygen flux measurement device, and the time exceeding a specified value are recorded to determine the time at which the dielectric material is completely eroded; the specified value is in the range of 20 MΩ to 100 MΩ.

[0099] The dielectric material includes a space thin-film insulating material; the resistive element of the atomic oxygen flux measuring device includes silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

[0100] The atomic oxygen flux in an atomic oxygen environment is calculated using the following expression:

[0101]

[0102] in, The atomic oxygen flux in the atomic oxygen environment, expressed in atoms / cm². 2 E t 'Indicates the atomic oxygen ablation rate of the dielectric material used for atomic oxygen flux measurement, in cm. 3 / atom;t is the time in seconds during which the medium material used for atomic oxygen flux measurement is completely eroded;h is the thickness of the medium material used for atomic oxygen flux measurement in μm.

[0103] In another specific embodiment, the atomic oxygen ablation rate measurement is performed on the material to be tested in situ within a vacuum chamber or in a space environment.

[0104] An atomic oxygen ablation rate measuring device, installed in a vacuum chamber or space environment, is used to measure the resistance value of the resistive element in real time. The time when the atomic oxygen ablation rate measurement begins, the start and end times of the change in the resistive element, and the time when the change exceeds a specified value are recorded to determine the complete ablation time of the material to be measured. The specified value is in the range of 20MΩ to 100MΩ.

[0105] The material to be tested includes a space thin-film insulating material; the resistive element of the atomic oxygen ablation rate measuring device is made of silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

[0106] The atomic ablation rate of the test material is calculated using the following expression:

[0107]

[0108] Among them, E t This represents the atomic oxygen erosion rate calculated for the tested material in the current atomic oxygen erosion rate measurement, in cm. 3 / atom;t' is the time, in seconds, during which the material under test is completely etched in the atomic oxygen ablation rate measurement. This refers to atomic oxygen flux density, expressed in atoms / cm². 2 ·s;h' represents the thickness of the material to be measured, in μm.

[0109] Based on the change in resistance of the atomic oxygen erosion rate measuring device caused by the reaction between the test material and atomic oxygen particles, relevant calculations or analyses are performed.

[0110] Compared with the prior art, this application measures the atomic oxygen flux of the dielectric material covering the resistive element in an atomic oxygen environment. When the dielectric material is completely eroded, the resistance changes, i.e., the resistance change caused by the reaction of the dielectric material with atomic oxygen is measured. Based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element is greater than a specified value, the time when the dielectric material is completely eroded can be determined. Based on the determined time when the dielectric material is completely eroded, the atomic oxygen flux of the atomic oxygen environment can be calculated.

[0111] Furthermore, by automatically measuring the resistance value of a resistive element during the atomic oxygen ablation rate measurement process, the atomic oxygen source is shut off when the measured resistance value of the resistive element exceeds a specified value, thereby stopping the atomic oxygen ablation rate measurement. Based on the start time of the atomic oxygen ablation rate measurement and the time when the resistance value of the resistive element exceeds the specified value, the time when the material under test is completely ablated can be accurately determined. This allows for precise calculation of the atomic oxygen ablation rate, enabling more effective in-situ vacuum testing and more efficient evaluation of the durability of the material under test (e.g., conductive materials on satellite surfaces) in a low Earth orbit (LEO) atomic oxygen environment.

[0112] like Figure 7 As shown, this embodiment provides an electronic device, which includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, which are executed by the at least one processor to enable the at least one processor to perform the method steps described in the above embodiment.

[0113] This application provides a non-volatile computer storage medium storing computer-executable instructions that can perform the steps described in the above embodiments.

[0114] The following is for reference. Figure 7 The diagram illustrates a structural schematic of an electronic device suitable for implementing the embodiments of this application. The terminal devices in the embodiments of this application may include, but are not limited to, mobile terminals such as mobile phones, laptops, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), in-vehicle terminals (e.g., in-vehicle navigation terminals), and fixed terminals such as digital TVs and desktop computers. Figure 7 The electronic device shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments of this application.

[0115] like Figure 7 As shown, the electronic device may include a processing unit (e.g., a central processing unit, a graphics processing unit, etc.) 401, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 402 or a program loaded from a storage device 408 into a random access memory (RAM) 403. The RAM 403 also stores various programs and data required for the operation of the electronic device. The processing unit 401, ROM 402, and RAM 403 are interconnected via a bus 404. An input / output (I / O) interface 405 is also connected to the bus 404.

[0116] Typically, the following devices can be connected to I / O interface 405: input devices 406 including, for example, touchscreens, touchpads, keyboards, mice, cameras, microphones, accelerometers, gyroscopes, etc.; output devices 407 including, for example, liquid crystal displays (LCDs), speakers, vibrators, etc.; storage devices 408 including, for example, magnetic tapes, hard disks, etc.; and communication devices 409. Communication device 409 allows electronic devices to communicate wirelessly or wiredly with other devices to exchange data. Although Figure 7Electronic devices with various devices are shown, but it should be understood that it is not required to implement or have all of the devices shown. More or fewer devices may be implemented or have alternatively.

[0117] Specifically, according to embodiments of this application, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, embodiments of this application include a computer program product comprising a computer program carried on a computer-readable medium, the computer program containing program code for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network via a communication device 409, or installed from a storage device 408, or installed from a ROM 402. When the computer program is executed by the processing device 401, it performs the functions defined in the methods of the embodiments of this application.

[0118] It should be noted that the computer-readable medium described above in this application can be a computer-readable signal medium, a computer-readable storage medium, or any combination thereof. A computer-readable storage medium can be, for example,—but not limited to—an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this application, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. In this application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable program code. Such propagated data signals can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium can be any computer-readable medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium can be transmitted using any suitable medium, including but not limited to: wires, optical fibers, RF (radio frequency), etc., or any suitable combination thereof.

[0119] The aforementioned computer-readable medium may be included in the aforementioned electronic device; or it may exist independently and not assembled into the electronic device.

[0120] Computer program code for performing the operations of this application can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, and C++, and conventional procedural programming languages ​​such as the "C" language or similar programming languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0121] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0122] The units described in the embodiments of this application can be implemented in software or hardware. The names of the units are not, in some cases, limiting the scope of the unit itself.

Claims

1. A method for in-situ vacuum measurement of atomic oxygen flux, characterized in that, include: A dielectric material with a known atomic oxygen erosion rate is applied to the resistive element; The atomic oxygen flux of the dielectric material covering the resistive element is measured in an atomic oxygen environment. When the dielectric material is completely eroded, the resistance changes. The atomic oxygen flux in the atomic oxygen environment is obtained by measuring the resistance change caused by the reaction of the dielectric material with atomic oxygen. The time when the dielectric material is completely eroded is determined based on the start time of the atomic oxygen flux measurement and the end time when the resistance value of the resistive element is greater than a specified value. The atomic oxygen flux of the atomic oxygen environment is calculated based on the time it takes for the determined medium material to be completely eroded.

2. The method for in-situ vacuum measurement of atomic oxygen flux according to claim 1, characterized in that, The calculation of the atomic oxygen flux in the atomic oxygen environment based on the determined time for complete erosion of the medium material includes: The atomic oxygen flux in an atomic oxygen environment is calculated using the following expression: in, The atomic oxygen flux in the atomic oxygen environment, expressed in atoms / cm². 2 E t 'Indicates the atomic oxygen ablation rate of the dielectric material used for atomic oxygen flux measurement, in cm. 3 / atom;t is the time in seconds during which the medium material used for atomic oxygen flux measurement is completely eroded;h is the thickness of the medium material used for atomic oxygen flux measurement in μm.

3. The method for in-situ vacuum measurement of atomic oxygen flux according to claim 2, characterized in that, Perform atomic oxygen flux measurements in a vacuum chamber or in situ in a space environment; An atomic oxygen flux measurement device is deployed in a vacuum chamber or space environment. The resistance value of the atomic oxygen flux measurement device is measured in real time. The start time of the atomic oxygen flux measurement, the start time and end time of the change in the atomic oxygen flux measurement device, and the time when the value exceeds a specified value are recorded to determine the time when the medium material is completely eroded. The specified value is in the range of 20MΩ to 100MΩ.

4. The method for in-situ vacuum measurement of atomic oxygen flux according to claim 1 or 2, characterized in that, The dielectric material includes a space thin-film insulating material; The resistive element of the atomic oxygen flux measuring device is made of materials including silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

5. A vacuum in-situ measurement method for atomic oxygen ablation rate, characterized in that, include: The atomic oxygen ablation rate of the test material covered on the resistive element is measured in an atomic oxygen environment. When the test material is completely ablated, the resistance changes. The atomic oxygen ablation rate of the test material is obtained by measuring the resistance change caused by the reaction of the test material with atomic oxygen. When the atomic oxygen erosion rate measurement is started, the resistance value of the resistor is measured. When the resistance value of the resistor is found to be greater than the specified value, the atomic oxygen erosion rate test is completed. The time when the material under test is completely eroded is determined based on the start time of the atomic oxygen ablation rate measurement and the end time when the resistance value of the resistive element is greater than a specified value. The atomic oxygen ablation rate of the test material is calculated based on the time it takes for the test material to be completely ablated.

6. The vacuum in-situ measurement method for atomic oxygen ablation rate according to claim 5, characterized in that, The step of calculating the atomic oxygen ablation rate of the test material based on the time it takes for the test material to be completely ablated includes: The atomic ablation rate of the test material is calculated using the following expression: Among them, E t This represents the atomic oxygen erosion rate calculated for the tested material in the current atomic oxygen erosion rate measurement, in cm. 3 / atom;t' is the time, in seconds, during which the material under test is completely etched in the atomic oxygen ablation rate measurement. This refers to atomic oxygen flux density, expressed in atoms / cm². 2 ·s;h' represents the thickness of the material to be measured, in μm.

7. The vacuum in-situ measurement method for atomic oxygen erosion rate according to claim 5 or 6, characterized in that, When the atomic oxygen erosion rate measurement begins, the resistance value of the resistive element is measured. When the measured resistance value of the resistive element is greater than a specified value, the atomic oxygen erosion rate test is completed, including: The atomic oxygen ablation rate measurement is performed on the material to be tested in a vacuum chamber or in situ in a space environment. An atomic oxygen ablation rate measuring device, installed in a vacuum chamber or space environment, is used to measure the resistance value of the resistive element in real time. The time when the atomic oxygen ablation rate measurement begins, the start and end times of the change in the resistive element, and the time when the change exceeds a specified value are recorded to determine the complete ablation time of the material to be measured. The specified value is in the range of 20MΩ to 100MΩ.

8. The vacuum in-situ measurement method for atomic oxygen erosion rate according to claim 5 or 6, characterized in that, Based on the change in resistance of the atomic oxygen erosion rate measuring device caused by the reaction between the test material and atomic oxygen particles, relevant calculations or analyses are performed.

9. The vacuum in-situ measurement method for atomic oxygen ablation rate according to claim 6, characterized in that, The material to be tested includes a space thin-film insulating material; The resistive element of the atomic oxygen erosion rate measuring device is made of materials including silver, osmium, carbon, and conductive materials that can react with atomic oxygen.

10. A vacuum in-situ measurement device, characterized in that, It is used to perform the in-situ vacuum measurement method for atomic oxygen flux as described in claim 1 or the in-situ vacuum measurement method for atomic oxygen erosion rate as described in claim 5, wherein the in-situ vacuum measurement device comprises: Measuring probe; A resistance measuring device is used to automatically measure the resistance value of a resistive element when starting to perform a vacuum in-situ measurement of atomic oxygen flux or a vacuum in-situ measurement of atomic oxygen erosion rate. When the measured resistance value of the resistive element is greater than a specified value, the vacuum in-situ measurement of atomic oxygen flux or a vacuum in-situ measurement of atomic oxygen erosion rate is stopped. The automatic processing module determines the time when the relevant material is completely eroded based on the start time of the in-situ vacuum measurement of atomic oxygen flux or the start time of the in-situ vacuum measurement of atomic oxygen ablation rate, and the time when the resistance value of the resistive element is greater than a specified value. The calculation and processing module performs parameter calculations based on the determined time when the relevant materials are completely eroded.

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