Perovskite solar cell, photovoltaic module, power generation device and power utilization device

Abstract

The invention provides a perovskite solar cell. The perovskite solar cell comprises a first electrode, a hole transport layer, a perovskite light absorption layer and a second electrode which are stacked in sequence, wherein the hole transport layer comprises a first layer, a second layer and a self-assembly monomolecular layer which are sequentially stacked, the first layer comprises inorganic nanoparticles, and the second layer comprises an inorganic sub-nano film. The perovskite solar cell provided by the invention has improved photoelectric performance and stability.

Description

Technical Field

[0001] This application relates to the field of battery technology, and in particular to a perovskite solar cell, photovoltaic module, power generation device, and power consumption device. Background Technology

[0002] Solar cells, as a new energy source, are primarily based on semiconductor materials. Their working principle involves the photovoltaic reaction, where photoelectric materials absorb light energy, offering advantages such as stability, safety, renewability, and zero pollution. In recent years, due to the improved efficiency of perovskite solar cells, perovskite solar cells utilizing perovskite-type organometal halide semiconductors as light-absorbing materials have experienced rapid development.

[0003] However, the low photoelectric performance and poor stability of perovskite solar cells still restrict their practical application and industrialization. Therefore, improving the photoelectric performance and stability of perovskite solar cells remains an urgent technical problem to be solved. Summary of the Invention

[0004] This application is made in view of the above-mentioned problems, and its object is to provide a perovskite solar cell, a photovoltaic module, a power generation device, and a power consumption device. The perovskite solar cell has improved photoelectric performance and stability.

[0005] To achieve the above objectives, the first aspect of this application provides a perovskite solar cell, comprising: a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode stacked sequentially; wherein the hole transport layer comprises a first layer, a second layer, and a self-assembled monolayer stacked sequentially, the first layer comprising inorganic nanoparticles, and the second layer comprising an inorganic sub-nano film.

[0006] In the perovskite solar cell of this application, by setting an ultrathin inorganic sub-nano film between the first layer and the self-assembled monolayer, the interaction between the ligands on the surface of the inorganic nanoparticles and the self-assembled monolayer material is blocked. This effectively suppresses the adverse effects of ligands on hole extraction, thereby enhancing hole extraction and / or hole transport, and consequently reducing the carrier concentration at the interface and decreasing nonradiative recombination of carriers. This improves the photoelectric performance and stability of the perovskite solar cell.

[0007] In some embodiments, the thickness of the inorganic subnanofilm is 0.25 nm to 1.0 nm. The inorganic subnanofilm is thin enough to facilitate blocking the interaction between the ligands on the surface of the inorganic nanoparticles in the first layer and the self-assembled monolayer material, without adversely affecting the battery performance due to the introduction of the inorganic subnanofilm itself.

[0008] In some embodiments, the inorganic subnanofilm comprises inorganic oxides. Treating the surface of nanoparticles with modified groups with inorganic oxides enhances hole transport capability, and the inorganic subnanofilm layer can cover some interface defects, reducing non-radiative recombination at the interface. Even using these ultrathin inorganic oxides to form ultrathin inorganic subnanofilms, while blocking the interaction between ligands on the surface of the inorganic nanoparticles in the first layer and the self-assembled monolayer material, also facilitates hole extraction and / or hole transport, further improving the photoelectric performance and stability of solar cells.

[0009] In some embodiments, the inorganic oxide includes aluminum oxide (AlO). x Silicon oxide (SiO) y , tin oxide SnO z or hafnium oxide HfO n One or more of the following, wherein 1≤x≤3, 1≤y≤4, 1≤z≤4, and 1≤n≤4. This further contributes to improving the photoelectric performance and stability of solar cells.

[0010] In some embodiments, the thickness of the first layer is 40 nm to 100 nm. This facilitates uniform coverage of the first electrode located beneath the first layer, while the appropriate thickness is beneficial for hole extraction and / or transport.

[0011] In some embodiments, the inorganic nanoparticles include one or more of inorganic oxide nanoparticles or inorganic nitride nanoparticles. This facilitates shielding of defects at the interface, thereby improving hole extraction and / or hole transport, and consequently enhancing the photoelectric performance and stability of the solar cell.

[0012] In some embodiments, the inorganic oxide nanoparticles include one or more of alumina (Al2O3) nanoparticles, silicon oxide (SiO2) nanoparticles, and tin oxide (SnO2) nanoparticles, and / or the inorganic nitride nanoparticles include silicon nitride (Si3N4) nanoparticles. This further contributes to improving the photoelectric performance and stability of solar cells.

[0013] In some embodiments, the self-assembled monolayer comprises a compound represented by the general formula QLA, wherein Q is selected from substituted or unsubstituted carbazole or triphenylamine, L is selected from substituted or unsubstituted alkylene groups, and A is selected from oxyacid groups.

[0014] In some embodiments, the compound represented by the general formula QLA satisfies one or more of the following conditions:

[0015] (1) The substituents of the substituted carbazolyl or triphenylaminel include one or more of the following: halogen groups, oxyacid groups, substituted or unsubstituted C1-C5 alkyl groups, substituted or unsubstituted C1-C5 alkoxy groups, substituted or unsubstituted six- to ten-membered aryl groups, and substituted or unsubstituted five- to ten-membered heteroaryl groups.

[0016] (2) The substituted or unsubstituted alkylene groups include any one of the C1 to C12 alkylene groups substituted or unsubstituted by halogen groups, oxyacid groups, C1 to C5 alkyl groups, C1 to C5 alkoxy groups, hexa- to deca-aryl groups, and penta- to deca-heteroaryl groups;

[0017] (3) The oxyacid group is selected from one or more of the following: phosphonic acid group, hypophosphite group, sulfonic acid group, carboxylic acid group, sulfinic acid group, boric acid group or silicate group.

[0018] In some embodiments, the compound represented by the general formula QLA includes one or more of the following: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, [4-(9H-carbazole-9-yl)butyl]phosphonic acid, (4-(3,6-dibromo-9H-carbazole-9-yl)butyl)phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, (2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, and (2-(3,6-dibromo-9H-carbazole-9-yl)ethyl)phosphonic acid.

[0019] The compound represented by the general formula QLA can self-assemble into a monolayer, which facilitates the efficient extraction of charge carriers from the perovskite light-absorbing layer to the first electrode through charge tunneling, thereby improving the photoelectric performance of the solar cell.

[0020] In some embodiments, the first layer is disposed on the side of the first electrode facing the perovskite light-absorbing layer, the second layer is disposed on the side of the first layer facing the perovskite light-absorbing layer, and the self-assembled monolayer is disposed on the side of the second layer facing the perovskite light-absorbing layer.

[0021] A second aspect of this application provides a photovoltaic module, the photovoltaic module comprising the perovskite solar cell described in the first aspect.

[0022] A third aspect of this application provides a power generation device, which includes the perovskite solar cell described in the first aspect.

[0023] A fourth aspect of this application provides an electrical device comprising the perovskite solar cell described in the first aspect.

[0024] The photovoltaic modules, power generation devices, and power consumption devices of this application include the perovskite solar cells provided in this application, and therefore have at least the same advantages as the perovskite solar cells. Attached Figure Description

[0025] Figure 1 This is a cross-sectional structural schematic diagram of a perovskite solar cell according to one embodiment of this application.

[0026] Explanation of reference numerals in the attached figures:

[0027] 100-Perovskite solar cell; 101-First electrode; 102-Hole transport layer; 1021-First layer; 1022-Second layer; 1023-SAM; 103-Perovskite light-absorbing layer; 104-Electron transport layer; 105-Hole blocking layer; 106-Second electrode. Detailed Implementation

[0028] The following detailed description, with appropriate reference to the accompanying drawings, specifically discloses embodiments of the perovskite solar cell, photovoltaic module, power generation device, and power consumption device of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0029] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60–120 and 80–110 are listed for a specific parameter, it is understood that ranges of 60–110 and 80–120 are also expected. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1–3, 1–4, 1–5, 2–3, 2–4, and 2–5. In this application, unless otherwise stated, the numerical range "a–b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0~5" indicates that all real numbers between "0~5" have been listed in this article; "0~5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0030] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0031] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.

[0032] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0033] Unless otherwise specified, the terms used in this application have the common meanings as commonly understood by those skilled in the art.

[0034] Unless otherwise specified, the values ​​of the parameters mentioned in this application can be determined using various testing methods commonly used in the art, for example, according to the testing methods given in this application.

[0035] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0036] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0037] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0038] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0039] definition

[0040] The term "halogen group" includes any one of -F, -Cl, -Br, and -I.

[0041] The term "C1-C20 alkyl" refers to a straight-chain or branched aliphatic hydrocarbon group having 1 to 20 carbon atoms. The term "C1-C5 alkyl" refers to a straight-chain or branched aliphatic hydrocarbon group having 1 to 5 carbon atoms. For example, C1-C5 alkyl includes C1-C4 alkyl, C1-C3 alkyl, and C1-C2 alkyl. Examples of C1-C5 alkyl include, but are not limited to, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, and sec-pentyl.

[0042] The term "C1-C5 alkoxy" refers to "C1-C5 alkyloxy," where the "C1-C5 alkyl" part is the same as the definition of "C1-C5 alkyl" above. For example, C1-C5 alkoxy includes C1-C4 alkoxy, C1-C3 alkoxy, and C1-C2 alkoxy. Examples of C1-C5 alkoxy include, but are not limited to, methoxy, ethoxy, propoxy, butoxy, and pentoxy.

[0043] The term "aryl" refers to a monocyclic or fused polycyclic group consisting of all carbon atoms with a conjugated π-electron system. The term "six- to ten-membered aryl" refers to a monocyclic or fused polycyclic group consisting of all carbon atoms with a 6- to 10-membered conjugated π-electron system. Examples of aryl groups include, but are not limited to, phenyl and naphthyl groups.

[0044] The term "five- to ten-membered heteroaryl" refers to a 5- to 10-membered monocyclic or fused polycyclic group having a conjugated π-electron system, wherein at least one carbon atom in the monocyclic or fused polycyclic ring structure is substituted by a heteroatom selected from O, N, and S. Examples of heteroaryl groups include, but are not limited to, pyrroleyl, furanyl, thiopheneyl, thiazolyl, isothiazolyl, imidazolyl, triazolyl, tetrazolyl, pyrazolyl, oxazolyl, isoxazolyl, pyridinyl, pyrazinyl, pyridinyl, pyrimidinyl, etc.

[0045] The term "C1-C12 alkylene" refers to a group formed by the loss of two hydrogen atoms from a saturated alkane having 1 to 12 carbon atoms. For example, C1-C12 alkylene includes C1-C10 alkylene, C1-C8 alkylene, C1-C6 alkylene, C1-C4 alkylene, C1-C2 alkylene, etc. Examples of alkylene include, but are not limited to, methylene, ethylene, propylene, butylene, pentylene, and hexylene.

[0046] When “substituted” is used in this article, the substituent includes one or more of the following: halogen group, C1-C5 alkyl, C1-C5 alkoxy, nitro, cyano, amino, hydroxy, and phenyl.

[0047] As used in this application, the term "layer" refers to any substantially layered structure. A layer may have a thickness that varies over its length. Typically, the thickness of a layer is approximately constant. The "thickness" of a layer as used in this application refers to the average thickness of the layer. The thickness of a layer can be measured using methods conventional in the art. For example, it can be measured using a Zygo NewView 9000 white light interferometer.

[0048] In recent years, due to the improved efficiency of perovskite solar cells, perovskite solar cells using perovskite-type metal halide semiconductors as light-absorbing materials have developed rapidly.

[0049] The photoelectric conversion principle of perovskite solar cells is as follows: Incident light (e.g., sunlight) enters the device from the light-transmitting side, then reaches the perovskite light-absorbing layer and is absorbed by it. Under the excitation of the incident light, the perovskite light-absorbing layer generates electron-hole pairs. Under the action of an electric field, the holes and electrons separate. The electrons are transferred to one electrode, while the holes are transferred to the other electrode. Subsequently, a loop is formed through the external circuit, which can be used to drive the load.

[0050] In perovskite solar cells, inorganic nanoparticles play a crucial role in hole transport. Therefore, existing technologies utilize composite layer structures comprising layers formed from inorganic nanoparticles and self-assembled monolayers as hole transport layers to facilitate hole transport. However, unmodified inorganic nanoparticles exhibit poor dispersibility in solvents and tend to aggregate during the fabrication of layer structures. To improve the dispersibility of inorganic nanoparticles, extensive surface modification with ligands is required. However, in perovskite solar cells, most ligands are detrimental to hole extraction, negatively impacting the cell's photoelectric performance.

[0051] Therefore, a technology is needed to reduce the negative impact of ligands on the surface of inorganic nanoparticles on the performance of perovskite solar cells, thereby improving at least one aspect of the photoelectric conversion efficiency, fill factor, open-circuit voltage, short-circuit current, and stability of perovskite solar cells.

[0052] Based on this, the first aspect of this application provides a perovskite solar cell. The perovskite solar cell includes: a first electrode, a hole transport layer, a perovskite light-absorbing layer, and a second electrode sequentially stacked; wherein the hole transport layer includes a first layer, a second layer, and a self-assembled monolayer sequentially stacked, the first layer comprising inorganic nanoparticles, and the second layer comprising an inorganic sub-nanofilm.

[0053] The term "inorganic nanoparticles" as used herein refers to inorganic material particles with an average particle size of 40 nm to 100 nm. Average particle size refers to the equivalent diameter of the largest particle at which the cumulative distribution in the particle size distribution curve reaches 50%. Average particle size can be measured using methods known in the art. For example, it can be measured using a particle size analyzer or a scanning electron microscope (SEM).

[0054] The term "inorganic subnanofilm" refers to an ultrathin film comprising inorganic materials with a thickness of 1.0 nm or less. The thickness of this film can be measured using instruments and methods known in the art. For example, it can be measured using a Zygo NewView 9000 white light interferometer.

[0055] The term "self-assembled monolayer (SAM)" refers to a two-dimensional monolayer that is spontaneously formed on the surface of a matrix through physicochemical interactions between molecules and the matrix surface, as well as between molecules. It is characterized by uniformity, tight packing, and low defects.

[0056] In related technologies, to promote hole transport, a composite layer structure comprising a layer formed by inorganic nanoparticles and a self-assembled monolayer is typically used as the hole transport layer. The inorganic nanoparticles used are usually surface-modified with a large number of ligands to increase their dispersibility in solvents and facilitate the fabrication of the layer structure. These ligands include -(CH2)3NH2, -(CH2)2COOH, etc. However, these ligands trap charge carriers, which is detrimental to hole extraction and negatively impacts the photoelectric performance of the battery.

[0057] In the perovskite solar cell of this application, by setting an ultrathin inorganic sub-nano film between the first layer and the self-assembled monolayer, the interaction between the ligands on the surface of the inorganic nanoparticles and the self-assembled monolayer material is blocked. This effectively suppresses the adverse effects of ligands on hole extraction, thereby enhancing hole extraction and / or hole transport, and consequently reducing the carrier concentration at the interface and decreasing nonradiative recombination of carriers. This improves at least one aspect of the perovskite solar cell's photoelectric conversion efficiency, fill factor, open-circuit voltage, short-circuit current, and stability.

[0058] In some embodiments, the thickness of the inorganic subnanofilm can be 0.25 nm to 1.0 nm, optionally 0.50 nm to 1.0 nm. Exemplarily, the thickness of the inorganic subnanofilm can be 0.25 nm, 0.50 nm, 0.75 nm, 1.0 nm, or any value within a range of two such values. Here, the thickness of the inorganic subnanofilm is sufficiently thin, which is beneficial for blocking the interaction between the ligands on the surface of the inorganic nanoparticles in the first layer and the self-assembled monolayer material, without adversely affecting battery performance due to the introduction of the inorganic subnanofilm itself.

[0059] In some embodiments, the inorganic subnanometer film comprises an inorganic oxide. In some embodiments, the inorganic oxide comprises aluminum oxide (AlO). x Silicon oxide (SiO) y , tin oxide SnO z or hafnium oxide HfO n One or more of the following, wherein 1≤x≤3, 1≤y≤4, 1≤z≤4, and 1≤n≤4. For example, x can be 1, 1.5, 2, 2.5, 3, or any value within a range of two numbers. For example, y can be 1, 1.5, 2, 2.5, 3, 3.5, 4, or any value within a range of two numbers. For example, z can be 1, 1.5, 2, 2.5, 3, 3.5, 4, or any value within a range of two numbers. For example, n can be 1, 1.5, 2, 2.5, 3, 3.5, 4, or any value within a range of two numbers. In the chemical formula AlO xSiO y SnO z HfO n In the figure, x, y, z, and n represent that these oxides are not in the form of oxides that conform to the standard stoichiometry calculated according to the valence of the elements. Instead, they are the process of the formation and disappearance of oxygen vacancies due to the existence of phenomena such as surface reconstruction and / or oxygen defects. Therefore, their composition cannot be expressed by the standard stoichiometry.

[0060] The inorganic oxides mentioned in this article, such as aluminum oxide (AlO), x Silicon oxide (SiO) y , tin oxide SnO z or hafnium oxide HfO n Using these inorganic oxides to form ultrathin inorganic sub-nano films, while blocking the interaction between ligands on the surface of inorganic nanoparticles in the first layer and the self-assembled monolayer material, it is also beneficial for hole extraction and / or hole transport, which is more conducive to improving the photoelectric performance and stability of solar cells.

[0061] In some embodiments, the inorganic subnanofilm comprises aluminum oxide (AlO2). x Aluminum oxide (AlO) x It is more effective in shielding defects at the interface, thereby improving the photoelectric performance and stability of solar cells.

[0062] In some embodiments, inorganic sub-nano films can be prepared by methods such as atomic layer deposition (ALD), chemical vapor deposition, physical vapor deposition, chemical vapor epitaxy, plasma-enhanced chemical vapor deposition, reactive plasma deposition, electron beam evaporation, magnetron sputtering, or vacuum evaporation.

[0063] In some embodiments, inorganic subnanofilms are prepared by atomic layer deposition (ALD). ALD allows for the deposition of single-atom films layer by layer onto a substrate surface, which facilitates the formation of ultrathin, uniformly thick subnanofilms. In ALD, there are no particular limitations on the precursor compounds used to form inorganic subnanofilms; precursor compounds known in the art for forming inorganic subnanofilms can be selected. Exemplarily, trimethylaluminum and water vapor can be used as precursor compounds to form aluminum oxide subnanofilms, tetraethoxysilane and water vapor can be used as precursor compounds to form silicon oxide subnanofilms, tetra(dimethylamino)tin and water vapor can be used as precursor compounds to form tin oxide subnanofilms, and tetra(ethylmethylamino)hafnium and water vapor can be used as precursor compounds to form hafnium oxide subnanofilms.

[0064] In some embodiments, the thickness of the first layer is 40 nm to 100 nm. Exemplarily, the thickness of the first layer can be 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or any value within a range of two such values. Controlling the thickness of the first layer within this range facilitates uniform coverage of the first electrode beneath the first layer, while a suitable thickness also facilitates hole extraction and / or transport.

[0065] In some embodiments, the inorganic nanoparticles include one or more of inorganic oxide nanoparticles or inorganic nitride nanoparticles. These inorganic nanoparticles partially cover interface defects, which helps to shield the defects at the interface, thereby facilitating hole extraction and / or hole transport, and thus improving the photoelectric performance and stability of the solar cell.

[0066] In some embodiments, the inorganic oxide nanoparticles include one or more of aluminum oxide (Al2O3) nanoparticles, silicon oxide (SiO2) nanoparticles, and tin oxide (SnO2) nanoparticles.

[0067] In some embodiments, the inorganic nitride nanoparticles include silicon nitride (Si3N4) nanoparticles.

[0068] In some embodiments, the inorganic nanoparticles have ligands such as -(CH2)3NH2 and -(CH2)2COOH on their surface to modify the surface, thereby increasing the dispersibility of the inorganic nanoparticles in the solvent and facilitating the preparation of a cambium structure.

[0069] The aforementioned inorganic nanoparticles can be obtained commercially. For example, the inorganic nanoparticles may include one or more of the following: Brofos-Al2O3-60 product purchased from Bohuas Nanotechnology Co., Ltd., Zc-Si80 product purchased from Jiangsu Zhichuan Technology Co., Ltd., SO3040 product purchased from Beijing Juguang Evonik Technology Co., Ltd., and Brofos-Si3N4 product purchased from Bohuas Nanotechnology Co., Ltd.

[0070] In some embodiments, the self-assembled monolayer comprises a compound represented by the general formula QLA, wherein Q is selected from substituted or unsubstituted carbazole or triphenylamine, L is selected from substituted or unsubstituted alkylene groups, and A is selected from oxyacid groups.

[0071] In some embodiments, the compound represented by general formula QLA satisfies one or more of the following conditions:

[0072] (1) The substituents of the substituted carbazolyl or triphenylaminel include one or more of the following: halogen group, oxyacid group, substituted or unsubstituted C1-C5 alkyl, substituted or unsubstituted C1-C5 alkoxy, substituted or unsubstituted six- to ten-membered aryl, substituted or unsubstituted five- to ten-membered heteroaryl.

[0073] (2) The substituted or unsubstituted alkylene groups include any one of the C1 to C12 alkylene groups substituted or unsubstituted by halogen groups, oxyacid groups, C1 to C5 alkyl groups, C1 to C5 alkoxy groups, six- to ten-aryl groups, five- to ten-heteroaryl groups;

[0074] (3) The oxyacid group is selected from one or more of the following: phosphonic acid group (-P(=O)(OH)2), hypophosphite group (-P(=O)-OH), sulfonic acid group (-SO3H), carboxylic acid group (-COOH), sulfinic acid group (-S(=O)-OH), boric acid group (-B(OH)2) or silicate group (-SiO3H).

[0075] In some embodiments, the compounds represented by the general formula QLA include [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), and (4-(3,6-dibromo-9H-carbazole-9-yl)butyl)phosphonic acid (Br One or more of the following: (-4PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), (2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid (Me-2PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), and (2-(3,6-dibromo-9H-carbazole-9-yl)ethyl)phosphonic acid (Br-2PACz).

[0076] The compound represented by the general formula QLA can self-assemble into a monolayer, which facilitates the efficient extraction of charge carriers from the perovskite light-absorbing layer to the first electrode through charge tunneling, thereby improving the photoelectric performance of the solar cell.

[0077] This application does not impose any particular limitation on the thickness of the self-assembled monolayer; any thickness conventionally used in the art for self-assembled monolayers may be adopted. For example, the thickness of the self-assembled monolayer (SAM) is in the range of 2 nm to 10 nm.

[0078] In some embodiments, a first layer is disposed on the side of the first electrode facing the perovskite light-absorbing layer, a second layer is disposed on the side of the first layer facing the perovskite light-absorbing layer, and a self-assembled monolayer is disposed on the side of the second layer facing the perovskite light-absorbing layer. That is, in these embodiments, the perovskite solar cell includes a first electrode, a first layer, a second layer, a self-assembled monolayer, a perovskite light-absorbing layer, and a second electrode, which are sequentially stacked.

[0079] The first and second electrodes are used to collect electrons / holes. In some embodiments, one of the first and second electrodes is a transparent electrode. This transparent electrode is the one that first receives the incident light. Exemplarily, the transparent electrode may include a transparent conductive material. This application does not particularly limit the transparent conductive material. Exemplarily, the transparent conductive material includes one or more of the following: tin oxide, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, antimony-doped tin oxide, indium-doped tungsten oxide (IWO), indium-doped chromium oxide (ICrO), indium-doped titanium oxide (ITiO), and graphene.

[0080] In some embodiments, the other electrode of the first and second electrodes may include the transparent conductive material described above or other conductive materials. This application does not particularly limit the other conductive materials. For example, other conductive materials include one or more of metals and their alloys, and elemental carbon materials. Exemplarily, metals and their alloys include one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, and tungsten. Exemplarily, elemental carbon materials include one or more of graphite, graphene, and carbon nanotubes.

[0081] In some embodiments, the first electrode is a transparent electrode, or also referred to as the front electrode; the second electrode is an electrode formed of other conductive materials as described above, or also referred to as the back electrode.

[0082] A perovskite light-absorbing layer is disposed between the first and second electrodes, and electron-hole pairs can be generated based on the excitation of incident light. This application does not impose a particular limitation on the band gap of the perovskite light-absorbing layer; a band gap conventionally used in the art can be employed. For example, the band gap of the perovskite light-absorbing layer can be in the range of 1.17 eV to 2.30 eV. This application does not impose a particular limitation on the band gap measurement method. For example, the band gap measurement method may include: first, obtaining an ultraviolet absorption curve through ultraviolet absorption spectroscopy; then, calculating the band gap of the perovskite light-absorbing layer using the Tauc equation. This application does not impose a particular limitation on the thickness of the perovskite light-absorbing layer; a thickness conventionally used in the art can be employed. For example, the thickness of the perovskite light-absorbing layer is in the range of 500 nm to 800 nm.

[0083] In some embodiments, the perovskite light-absorbing layer comprises a perovskite material. In some embodiments, the perovskite material comprises one or more of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6, wherein A comprises one or more inorganic or organic monovalent cations, B comprises one or more inorganic divalent cations, C comprises one or more inorganic monovalent cations, D comprises one or more inorganic trivalent cations, and X comprises one or more inorganic anions.

[0084] For example, organic monovalent cations include (NR1R2R3R4). + (R1R2N=CR3R4) + (R1R2N-C(R5)=NR3R4) + Or (R1R2N-C(NR5R6)=NR3R4) + One or more of the following, wherein R1, R2, R3, R4, R5, and R6 are each independently selected from H, substituted or unsubstituted C1-C20 alkyl groups, or substituted or unsubstituted aryl groups. Optionally, the organic monovalent cation includes (H2N=CH-NH2). + (abbreviated as FA), CH3NH3 + One or more of (abbreviated as MA).

[0085] For example, the inorganic monovalent cation includes: Li + Na + K + 、Rb + Cs + Cu + Ag + Au + or Hg + One or more of the following. Optionally, the inorganic monovalent cation includes Rb. + Cs + One or more of them.

[0086] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Ni 2+ Cd 2+ Cu2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ One or more of the following. Optionally, the inorganic divalent cation includes Pb. 2+ Sn 2+ One or more of them.

[0087] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Au 3+ Or Al 3+ One or more of them.

[0088] For example, inorganic anions include: F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CN - SeCN - One or more of them.

[0089] In some embodiments, the perovskite light-absorbing layer comprises: (FA) a MA 1-a ) b Cs 1-b Pb(I c Br 1-c )3, where 0≤a≤1, 0≤b≤1, 0≤c≤1, and FA represents (H2N=CH-NH2) + MA represents CH3NH3 + In some embodiments, the perovskite light-absorbing layer comprises (FA) 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 )3, CH3NH3PbI3, FAPbI3, (FA 0.83 MA0.17 ) 0.95 Cs 0.05 Pb(I 0.83 Br 0.17 3. One or more of CsPbI3, CsPbI2Br, and CsPbIBr2. The band gap of the above perovskite light-absorbing layer can be adjusted, which is beneficial to obtaining better photoelectric properties.

[0090] In some embodiments, a perovskite solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second electrode stacked sequentially. The hole transport layer comprises a first layer, a second layer, and a self-assembled monolayer stacked sequentially. The first layer comprises inorganic nanoparticles, and the second layer comprises an inorganic sub-nanofilm. The first electrode, first layer, second layer, self-assembled monolayer, perovskite light-absorbing layer, and second electrode are as described above and will not be repeated here. The electron transport layer is disposed between the perovskite light-absorbing layer and the second electrode, and functions to transport electrons generated by the excitation of the perovskite light-absorbing layer to the second electrode, while preventing hole transport.

[0091] This application does not impose any particular limitation on the electron transport material used in the electron transport layer; commonly used electron transport materials in the art can be used. For example, electron transport materials include one or more of the following: imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, imide compounds include one or more of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Exemplarily, quinone compounds include benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone [6,6]-phenyl-C 61 One or more of methyl butyrate. Exemplarily, fullerenes and their derivatives include fullerene C60, [6,6]-phenyl-C60, etc. 61 - Methyl butyrate (PCMB). Exemplarily, the metal element in the metal oxide includes one or more of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, or Cr. Optionally, the metal oxide includes one or more of tin dioxide (SnO2) and titanium dioxide (TiO2). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes one or more of strontium titanate and calcium titanate. Exemplarily, the fluoride includes one or more of lithium fluoride and calcium fluoride.

[0092] This application does not impose any particular limitation on the thickness of the electron transport layer; a thickness conventionally used in the art for electron transport layers may be adopted. For example, the thickness of the electron transport layer is 15 nm to 35 nm.

[0093] In some embodiments, a perovskite solar cell includes a first electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and a second electrode, which are sequentially stacked. The hole transport layer comprises a first layer, a second layer, and a self-assembled monolayer, which are sequentially stacked. The first layer comprises inorganic nanoparticles, and the second layer comprises an inorganic sub-nanofilm. The first electrode, the first layer, the second layer, the self-assembled monolayer, the perovskite light-absorbing layer, the electron transport layer, and the second electrode are as described above and will not be repeated here. The hole blocking layer is disposed between the electron transport layer and the second electrode. The hole blocking layer improves both electron extraction and hole blocking performance.

[0094] The hole blocking layer includes a hole blocking material. This application does not impose any particular limitation on the hole blocking material. For example, the hole blocking material may include one or more of SnO2 and copper bath (BCP, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline).

[0095] This application does not impose any particular limitation on the thickness of the hole blocking layer; a thickness commonly used in the art for hole blocking layers may be adopted. For example, the thickness of the hole blocking layer is 5 nm to 10 nm.

[0096] Figure 1 A cross-sectional structural schematic diagram of a perovskite solar cell according to one embodiment of this application is shown. Figure 1 As shown, the perovskite solar cell 100 includes, from bottom to top, a first electrode 101, a hole transport layer 102, a perovskite light-absorbing layer 103, an electron transport layer 104, a hole blocking layer 105, and a second electrode 106 stacked sequentially. The hole transport layer includes a first layer 1021, a second layer 1022, and a self-assembled monolayer 1023 stacked sequentially. The first electrode 101, first layer 1021, second layer 1022, self-assembled monolayer 1023, perovskite light-absorbing layer 103, electron transport layer 104, hole blocking layer 105, and second electrode 106 are each described above and will not be repeated here.

[0097] In some embodiments, the perovskite solar cell further includes a passivation layer disposed on at least one surface of the perovskite light-absorbing layer, which helps to reduce defects at the interface and further improve the performance of the solar cell.

[0098] The passivation layer may include passivating agents conventionally used in the art for passivating perovskite light-absorbing layers, such as small organic molecules, organic salts, inorganic salts, and polymers. Small organic molecule passivating agents include, but are not limited to, phenylethylamine, ethylenediamine, pyridine, butanethiol, and 2,5-thiophene dicarboxylic acid. Organic salt passivating materials include, but are not limited to, piperazine iodine, phenylethylamine hydroiodate, dodecyl hydroiodate, guanidine bromide, thiophene ethylamine hydroiodate, ethylenediamine hydroiodate, and oleylamine iodine. Inorganic salt passivating materials include, but are not limited to, zinc chloride, potassium chloride, and gallium chloride. Polymer passivating materials include, but are not limited to, polymethyl methacrylate, polyethylene oxide, polyacrylonitrile, and polyvinyl alcohol.

[0099] The fabrication methods for the various functional layers of a solar cell, such as the first electrode, the first layer, the self-assembled monolayer, the perovskite light-absorbing layer, the passivation layer, the electron transport layer, the hole blocking layer, and the second electrode, are not particularly limited and can include fabrication methods commonly used in the art, such as chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, vacuum thermal evaporation, atomic layer deposition, magnetron sputtering, spin coating, slot coating, blade coating, and mechanical pressing.

[0100] In some embodiments, the perovskite solar cell further includes a substrate layer disposed on the side of the first electrode away from the hole transport layer for supporting the perovskite solar cell. The substrate layer can be, but is not limited to, a glass substrate or a flexible substrate. In some embodiments, the flexible substrate layer may be made of, for example (but not limited to), an organic polymer material, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0101] This application also provides a photovoltaic module, including the perovskite solar cell provided in the above embodiments. In some embodiments, the photovoltaic module further includes solder strips connecting multiple solar cells, a junction box for current transmission, and cell encapsulation components.

[0102] In some embodiments, the battery encapsulation component includes photovoltaic glass. The photovoltaic glass covers the aforementioned solar cell, serving to protect it. Simultaneously, the photovoltaic glass possesses excellent light transmittance and high hardness, allowing it to withstand large diurnal temperature variations and harsh weather conditions.

[0103] In some embodiments, the battery encapsulation component includes an ethylene-vinyl acetate copolymer (EVA) film disposed between the photovoltaic glass and the solar cell for bonding the photovoltaic glass and the solar cell.

[0104] In some implementations, the battery encapsulation components include a photovoltaic backsheet. The photovoltaic backsheet serves to protect the solar cells.

[0105] Optionally, the photovoltaic backsheet material may include a polyvinyl fluoride composite film or a thermoplastic elastic material. The photovoltaic backsheet material possesses properties such as insulation, water resistance, and aging resistance.

[0106] In some implementations, the battery encapsulation component includes a solar aluminum frame, made of aluminum alloy, which features high strength and corrosion resistance. It serves to support and protect the solar cells.

[0107] This application also provides a power generation device, including the solar cell provided in the above embodiments.

[0108] This application also provides an electrical device, including the solar cell provided in the above embodiments.

[0109] In some implementations, the electrical appliance may include lighting equipment, energy storage equipment, etc., but is not limited to these. For example, the electrical appliance includes solar water heaters, solar streetlights, solar photovoltaic generators, etc.

[0110] Example

[0111] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0112] Example 1

[0113] The following steps are used to prepare perovskite solar cells.

[0114] 1. Provide the first electrode

[0115] Take a 2.0*2.0cm FTO conductive glass piece, and remove 0.35cm of FTO from each end using laser etching to expose the glass substrate. Clean the etched FTO conductive glass sequentially with cleaning solution, deionized water, acetone, and ethanol using ultrasonic cleaning. After ultrasonic cleaning, dry the FTO conductive glass. Before use, irradiate the FTO conductive glass with ultraviolet light.

[0116] 2. Formation of a hole transport layer

[0117] 2.1 Formation of the first layer

[0118] At room temperature, 50 mg of alumina nanoparticles (referred to as alumina NP, Brofos-Al2O3-60 model, with a particle size of 60 nm) were dispersed in 5 mL of isopropanol. The alumina nanoparticles have a ligand -(CH2)2COOH on their surface. 120 μL of the resulting dispersion was dropped onto a prepared FTO glass substrate and spin-coated at 4000 rpm for 30 s using a spin coater. After spin-coating, the substrate was placed on a hot plate and annealed at 100 °C for 15 min, then allowed to cool naturally to room temperature to obtain a first layer with a thickness of 60 nm.

[0119] 2.2 Formation of the second layer

[0120] Using atomic layer deposition (ALD) with an ALD device (Nanotech Microelectronics Equipment Co., Ltd., NCE-200R), a sub-nanometer aluminum oxide film was formed on the first layer as the second layer (referred to as ALD AlO). X The precursor compounds used were trimethylaluminum and water vapor, the inert gas was N2, the deposition temperature was 100℃, and two deposition cycles were performed. This resulted in a second layer with a thickness of 0.5 nm.

[0121] 2.3 Formation of self-assembled monolayers

[0122] Weigh 3 mg of MeO-4PACz and disperse it in 6 mL of isopropanol. Shake for 30 min until the MeO-4PACz is completely dissolved. Add 120 μL of the resulting dispersion to the second layer and spin coat it at 4500 rpm / s for 25 s using a spin coater. After spin coating, place it on a hot plate and anneal at 110 °C for 15 min, then allow it to cool naturally to room temperature to obtain a self-assembled monolayer with a thickness of 2 nm.

[0123] 3. Formation of a perovskite light-absorbing layer

[0124] Weigh out 480.31 mg formamidinium hydroiodate (FAI), 31.39 mg methylammonium iodide (MAI), 6.38 mg methylammonium bromide (MABr), 38.97 mg cesium iodide (CsI), 22.57 mg lead bromide (PbBr2), and 1452.18 mg lead iodide (PbI2), and dissolve them in 2 mL of a mixture of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio of 4:1) to obtain a perovskite precursor solution.

[0125] The solution was then agitated in the dark for 5 hours. After agitation, impurities in the precursor solution were removed using a filter head (25 mm diameter needle filter, 0.22 μm mesh size). 150 μL of the perovskite precursor solution was added dropwise onto the hole transport layer and spin-coated at 5000 rpm for 40 seconds. Ten seconds before the end of the spin-coating, 200 μL of chlorobenzene was rapidly added to regulate perovskite crystallization. After spin-coating, the solution was annealed at 150 °C for 15 minutes to obtain a perovskite light-absorbing layer with a thickness of 550 nm, wherein the perovskite material was (FA... 0.98 MA 0.02 ) 0.95 Cs 0.05 Pb(I 0.98 Br 0.02 3.

[0126] 4. Formation of an electron transport layer

[0127] A 35 nm thick C layer was prepared on the perovskite light-absorbing layer by vapor deposition. 60 Electron transport layer.

[0128] 5. Formation of a cavity barrier layer

[0129] A 5 nm thick BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) hole blocking layer was prepared on the electron transport layer by vapor deposition.

[0130] 6. Forming the second electrode

[0131] A 90 nm thick layer of metallic copper (Cu) is deposited on the hole blocking layer as the second electrode.

[0132] Examples 2 to 16

[0133] The perovskite solar cells of Examples 2 to 16 were prepared using the same method as in Example 1, except that the first and second layers of each example were prepared using the materials in Table 1 below.

[0134] Specifically, in Example 2, the formation process of the second layer is as follows: A silicon oxide sub-nanometer film (referred to as ALD SiO) is formed on the first layer using atomic layer deposition (ALD) equipment. y The precursor compounds used were tetraethoxysilane and water vapor, the inert gas was N2, the deposition temperature was 100℃, and two deposition cycles were performed. This resulted in a second layer with a thickness of 0.5 nm.

[0135] In Example 3, the formation process of the second layer is as follows: A tin oxide sub-nanometer film (referred to as ALD SnO) is formed on the first layer using atomic layer deposition (ALD) equipment.z The precursor compound used was tetra(dimethylamino)tin and water vapor, the inert gas was N2, the deposition temperature was 100℃, and two deposition cycles were performed. This resulted in a second layer with a thickness of 0.5 nm.

[0136] In Example 4, the formation process of the second layer is as follows: A hafnium oxide subnanofilm (abbreviated as ALD HfO) is formed on the first layer using atomic layer deposition (ALD) equipment. n The precursor compound used was tetra(ethylmethylamino)hafnium and water vapor, the inert gas was N2, the deposition temperature was 100℃, and two deposition cycles were performed. This resulted in a second layer with a thickness of 0.5 nm.

[0137] In Examples 5 to 8, the formation process of the first layer is as follows: At room temperature, 50 mg of silica nanoparticles (referred to as silica NP, Jiangsu Zhichuan Technology Co., Ltd., Zc-Si80) with a particle size of 80 nm were dispersed in 5 ml of isopropanol. The silica nanoparticles have a ligand -(CH2)3-NH2 on their surface. 120 μL of the resulting dispersion was dropped onto a prepared FTO glass substrate and spin-coated at 4000 rpm / s for 30 s using a spin coater. After spin-coating, the substrate was placed on a hot plate and annealed at 100 °C for 15 min, then naturally cooled to room temperature to obtain a first layer with a thickness of 80 nm. In Examples 5 to 8, the formation process of the second layer was the same as in Examples 1 to 4.

[0138] In Examples 9 to 12, the formation process of the first layer is as follows: At room temperature, 50 mg of tin oxide nanoparticles (referred to as tin oxide NP, Beijing Juguang Yingchuang Technology Co., Ltd., SO3040) with a particle size of 50 nm were dispersed in 5 ml of isopropanol. The tin oxide nanoparticles have a ligand -(CH2)3-NH2 on their surface. 120 μL of the resulting dispersion was dropped onto a prepared FTO glass plate and spin-coated at 4000 rpm / s for 30 s using a spin coater. After spin-coating, the plate was placed on a hot plate and annealed at 100 °C for 15 min, then naturally cooled to room temperature to obtain a first layer with a thickness of 50 nm. In Examples 9 to 12, the formation process of the second layer is the same as in Examples 1 to 4.

[0139] In Examples 13 to 16, the formation process of the first layer is as follows: At room temperature, 50 mg of silicon nitride nanoparticles (referred to as silicon nitride NP, Brofos-Si3N4, with a particle size of 60 nm) were dispersed in 5 ml of isopropanol. The surface of the silicon nitride nanoparticles has the ligand -(CH2)3-NH2. 120 μL of the resulting dispersion was dropped onto a prepared FTO glass substrate and spin-coated at 4000 rpm / s for 30 s using a spin coater. After spin-coating, the substrate was placed on a hot plate and annealed at 100°C for 15 min, then naturally cooled to room temperature to obtain a first layer with a thickness of 60 nm. In Examples 13 to 16, the formation process of the second layer was the same as in Examples 1 to 4.

[0140] Table 1: Materials of the first and second layers in Examples 1 to 16

[0141]

[0142] Comparative Example 1

[0143] Perovskite solar cells were prepared using the same method as in Example 1, except that no first and second layers were formed.

[0144] Comparative Examples 2 to 5

[0145] Perovskite solar cells were prepared using the same method as in Example 1, except that in Comparative Examples 2 to 5, a first layer was formed in the same manner as in Examples 1, 5, 9 and 13, but a second layer was not formed.

[0146] Comparative Examples 6 to 9

[0147] Perovskite solar cells were prepared using the same method as in Example 1, except that in Comparative Examples 6 to 9, a first layer was not formed, and a second layer was formed in the same manner as in Examples 1 to 4.

[0148] The materials of the first and second layers in Comparative Examples 1 to 9 are shown in Table 2 below.

[0149] Table 2: Materials of the first and second layers in Comparative Examples 1 to 9

[0150] serial number The material of the first layer The second layer of material Hole transport layer structure Comparative Example 1 / / SAM Comparative Example 2 Alumina NP / Alumina NP-SAM Comparative Example 3 Silicon oxide NP / NP-SAM of silicon dioxide Comparative Example 4 Tin oxide NP / Tin oxide NP-SAM Comparative Example 5 Silicon nitride NP / Silicon nitride NP-SAM Comparative Example 6 / <![CDATA[ALD AlO x ]]> <![CDATA[ALD AlO x -SAM]]> Comparative Example 7 / <![CDATA[ALD SiO y ]]> <![CDATA[ALD SiO y -ALONE<!-- 13 --> ]]> Comparative Example 8 / <![CDATA[ALD SnO z ]]> <![CDATA[ALD SnO z -SAM]]> Comparative Example 9 / <![CDATA[ALD HfO n ]]> <![CDATA[ALD HfO n -SAM]]>

[0151] Testing the photoelectric performance of solar cells

[0152] The photoelectric conversion efficiency (PCE) and open-circuit voltage (V) of the solar cell were tested using the following method. OC ), short-circuit current (J)SC ).

[0153] The photoelectric performance parameters of the battery were tested under standard test conditions using a solar simulator, with a total irradiance of 100 mW / cm². 2 The spectral intensity is AM1.5G. P was obtained. out P in V mpp J mpp V OC J SC Then, calculate the PCE based on the following formula:

[0154] PCE = P out / P in

[0155] =V OC ×J SC ×(V mpp ×J mpp ) / (V OC ×J SC );

[0156] =V OC ×J SC ×FF / P in ;

[0157] Where P out P in V mpp J mpp FF represent the battery's operating output power, incident light power, battery's maximum power point voltage, battery's maximum power point current, and fill factor, respectively.

[0158] Solar cell stability test

[0159] The stability of the solar cell was tested using the following method.

[0160] The solar cell was clamped in a test fixture and placed on a 55°C heated stage for continuous heating. Under N2 atmosphere and AM1.5 standard sunlight, the change in its photoelectric conversion efficiency over time was tracked. The time required for its photoelectric conversion efficiency to decay to 80% of its initial photoelectric conversion efficiency is denoted as T. 80 This is used to indicate the stability level of a solar cell.

[0161] The photoelectric performance and stability test results of the solar cells of Examples 1 to 16 and Comparative Examples 1 to 9 are shown in Table 3 below.

[0162] Table 3: Battery performance and stability test results in Examples 1-16 and Comparative Examples 1-9

[0163]

[0164] The solar cell in Comparative Example 1 does not include a first layer and a second layer. The solar cells in Comparative Examples 2 to 5 do not include a second layer. The solar cells in Comparative Examples 6 to 9 do not include a first layer. However, the solar cells in Examples 1 to 16 of this application include a first layer and an inorganic sub-nanofilm disposed between the first layer and the self-assembled monolayer as a second layer. As can be seen from the test results in Table 3, the solar cells of the present application are superior to the comparative solar cells in at least one aspect of photoelectric conversion efficiency, fill factor, open-circuit voltage, short-circuit current, and stability, while other aspects (e.g., short-circuit current) are at least comparable to the comparative solar cells. This indicates that the solar cells of this application, which simultaneously include a first layer, a second layer, and a self-assembled monolayer as a hole transport layer, can exhibit superior photoelectric performance and stability.

[0165] In particular, compared to the solar cells in Comparative Examples 2 to 5, the solar cells in Examples 1 to 16 of this application have an additional inorganic sub-nanofilm as a second layer. Based on the test results in Table 3, it can be inferred that the second layer blocks the interaction between the ligands on the surface of the inorganic nanoparticles and the self-assembled monolayer material, effectively suppressing the adverse effects of the ligands on hole extraction. This enhances hole extraction and / or hole transport, thereby reducing the carrier concentration at the interface and decreasing non-radiative recombination of carriers. Therefore, the photoelectric performance and stability of the solar cells in these embodiments are generally superior to those in Comparative Examples 2 to 5.

[0166] Examples 17 to 20

[0167] The perovskite solar cells of Examples 17 to 20 were prepared using the same method as those of Examples 1 to 4, with the only difference being that in Examples 17 to 20, four ALD deposition cycles were performed when forming the second layer. This resulted in a second layer with a thickness of 1.0 nm.

[0168] Examples 21 to 24

[0169] The perovskite solar cells of Examples 21 to 24 were prepared using the same method as in Examples 1 to 4, with the only difference being that in Examples 21 to 24, one ALD deposition cycle was performed when forming the second layer. This resulted in a second layer with a thickness of 0.25 nm.

[0170] Comparative Examples 10 to 13

[0171] Comparative Examples 10 to 13 were prepared using the same method as in Examples 1 to 4, with the only difference being that in Comparative Examples 10 to 13, six ALD deposition cycles were performed when forming the second layer. This resulted in a second layer with a thickness of 1.5 nm.

[0172] Table 4: Materials and thicknesses of the first and second layers in Examples 1-4, 17-24 and Comparative Examples 10-13

[0173]

[0174] Table 5: Battery performance and stability test results in Examples 1-4, 17-24 and Comparative Examples 10-13

[0175]

[0176] In Examples 1 to 4, the thickness of the second layer was 0.5 nm. In Examples 17 to 20, the thickness of the second layer was 1.0 nm. In Examples 21 to 24, the thickness of the second layer was 0.25 nm. In Comparative Examples 10 to 13, the thickness of the second layer was 1.5 nm. As can be seen from the test results in Table 5, the solar cells of Examples 1 to 4 and 17 to 24 are superior to those of Comparative Examples 10 to 13 in at least one aspect of photoelectric conversion efficiency, fill factor, open-circuit voltage, short-circuit current, and stability. This indicates that controlling the thickness of the second layer within the range of 0.25 nm to 1.0 nm can produce superior cell performance and stability.

[0177] It should be noted that this application is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same structure and effect as the technical concept within the scope of this application are included in the technical scope of this application. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing by combining some of the constituent elements of the embodiments, without departing from the spirit of this application, are also included in the scope of this application.

Claims

1. A perovskite solar cell, characterized in that, include: The first electrode, hole transport layer, perovskite light-absorbing layer and second electrode are stacked in sequence. The hole transport layer comprises a first layer, a second layer, and a self-assembled monolayer stacked sequentially. The first layer comprises inorganic nanoparticles, and the second layer comprises an inorganic sub-nano film.

2. The perovskite solar cell according to claim 1, characterized in that, The thickness of the inorganic sub-nano film is 0.25 nm to 1.0 nm.

3. The perovskite solar cell according to claim 1 or 2, characterized in that, The inorganic sub-nanometer film comprises inorganic oxides.

4. The perovskite solar cell according to claim 3, characterized in that, The inorganic oxide includes aluminum oxide (AlO). x Silicon oxide (SiO) y , tin oxide SnO z or hafnium oxide HfO n One or more of the following, wherein 1≤x≤3, 1≤y≤4, 1≤z≤4, and 1≤n≤4.

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that, The thickness of the first layer is 40nm to 100nm.

6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that, The inorganic nanoparticles include one or more of inorganic oxide nanoparticles or inorganic nitride nanoparticles.

7. The perovskite solar cell according to claim 6, characterized in that, The inorganic oxide nanoparticles include one or more of aluminum oxide Al2O3 nanoparticles, silicon oxide SiO2 nanoparticles, and tin oxide SnO2 nanoparticles, and / or the inorganic nitride nanoparticles include silicon nitride Si3N4 nanoparticles.

8. The perovskite solar cell according to any one of claims 1 to 7, characterized in that, The self-assembled monolayer includes compounds represented by the general formula QLA. Wherein, Q is selected from substituted or unsubstituted carbazolyl or triphenylaminol, L is selected from substituted or unsubstituted alkylene groups, and A is selected from oxyacid groups.

9. The perovskite solar cell according to claim 8, characterized in that, The compounds represented by the general formula QLA satisfy one or more of the following conditions: (1) The substituents of the substituted carbazolyl or triphenylaminel include one or more of the following: halogen groups, oxyacid groups, substituted or unsubstituted C1-C5 alkyl groups, substituted or unsubstituted C1-C5 alkoxy groups, substituted or unsubstituted six- to ten-membered aryl groups, and substituted or unsubstituted five- to ten-membered heteroaryl groups. (2) The substituted or unsubstituted alkylene groups include any one of the C1 to C12 alkylene groups substituted or unsubstituted by halogen groups, oxyacid groups, C1 to C5 alkyl groups, C1 to C5 alkoxy groups, hexa- to deca-aryl groups, and penta- to deca-heteroaryl groups; (3) The oxyacid group is selected from one or more of the following: phosphonic acid group, hypophosphite group, sulfonic acid group, carboxylic acid group, sulfinic acid group, boric acid group or silicate group.

10. The perovskite solar cell according to claim 8 or 9, characterized in that, The compounds represented by the general formula QLA include one or more of the following: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, [4-(9H-carbazole-9-yl)butyl]phosphonic acid, (4-(3,6-dibromo-9H-carbazole-9-yl)butyl)phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, (2-(3,6-dimethyl-9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, and (2-(3,6-dibromo-9H-carbazole-9-yl)ethyl)phosphonic acid.

11. The perovskite solar cell according to any one of claims 1 to 10, characterized in that, The first layer is disposed on the side of the first electrode facing the perovskite light-absorbing layer, the second layer is disposed on the side of the first layer facing the perovskite light-absorbing layer, and the self-assembled monolayer is disposed on the side of the second layer facing the perovskite light-absorbing layer.

12. A photovoltaic module, characterized in that, The photovoltaic module includes any one of claims 1 to 11.

13. A power generation device, characterized in that, The power generation device includes a perovskite solar cell according to any one of claims 1 to 11.

14. An electrical appliance, characterized in that, The electrical device includes any one of claims 1 to 11.

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