Gas conveying device and method and semiconductor process equipment

Abstract

The invention relates to a gas conveying device and method and semiconductor process equipment. The conveying device comprises a gas pipeline, a spiral fan blade structure and a spring assembly. The spiral fan blade structure is arranged in the gas pipeline and is used for mixing at least two gases; the spring assemblies are installed at the two ends of the spiral fan blade structure and used for deforming when gas flows so as to generate elastic potential energy, releasing the elastic potential energy when the gas flow is interrupted, and driving the spiral fan blade structure to oscillate in the gas pipeline through the elastic potential energy. Therefore, various gases can be uniformly mixed, a gas mixing structure with a complex structure can be replaced, and the cost and the follow-up maintenance cost and time are reduced; and a self-cleaning function is realized.

Description

Technical Field

[0001] This application relates primarily to the field of semiconductor equipment, and more particularly to a gas delivery device, method, and semiconductor process equipment. Background Technology

[0002] In thin film deposition processes, the gas delivery system is one of the core components, requiring the stable delivery of various mixed gases in precise proportions into the reaction chamber to ensure the accuracy and consistency of the reaction on the wafer surface. Currently, gas delivery methods are mainly divided into two categories:

[0003] One approach uses hollow tubes as the gas line transport components to deliver gases. However, when multiple gases need to be mixed to participate in the wafer surface reaction, gas mixing relies solely on the diffusion process of the hollow tube. Due to differences in density and diffusion coefficient among different gases, the lateral diffusion rate of gas molecules is extremely low, making it difficult for multiple gases to mix uniformly during transport. This results in inconsistent reaction rates in different areas of the wafer, leading to poor film thickness uniformity, side reactions that generate impurity particles, and reduced wafer process yield.

[0004] Another approach is to use a gas delivery device with a hybrid structure, which integrates specific mixing components into the delivery path to enhance the gas mixing effect. However, the complex internal flow channels of the hybrid structure increase the gas flow resistance. The hybrid structure is exposed to gas scouring and temperature changes for a long time, which can easily lead to wear and aging, resulting in a shorter service life and higher operating costs.

[0005] Existing gas delivery systems cannot meet the requirements of precision manufacturing for gas mixing, making it difficult to guarantee the process performance of wafer surfaces. Furthermore, due to their complex structure and short lifespan, they cannot adapt to process requirements. Summary of the Invention

[0006] One objective of this application is to provide a gas delivery device, method, and semiconductor process equipment to solve the problems of uneven mixing of multiple gases in the prior art, which affects process performance, as well as the complex structure and high cost of the gas mixing.

[0007] According to one aspect of this application, a gas conveying device is provided, the gas conveying device comprising: a gas pipe, a spiral fan blade structure, and a spring assembly;

[0008] The spiral fan blade structure is disposed inside the gas pipeline for mixing at least two gases;

[0009] The spring assembly is installed at both ends of the spiral fan blade structure to deform and generate elastic potential energy when passing through the gas flow, and to release the elastic potential energy when the gas flow is interrupted, thereby driving the spiral fan blade structure to oscillate within the gas pipeline.

[0010] Optionally, the spiral fan blade mechanism includes multiple spiral fan blades and a fan blade shaft, wherein the multiple spiral fan blades are fixed to the fan blade shaft in a spiral manner.

[0011] Optionally, the gap between the spiral fan blade and the inner wall of the gas pipe is in the range of 0.15mm to 0.25mm.

[0012] Optionally, the fan blade structure includes a gas inlet end and a gas outlet end, and the spiral fan blades are distributed on the fan blade shaft with a gradually changing angle, and the spiral angle at the gas inlet end is greater than the spiral angle at the gas outlet end.

[0013] Optionally, the helical angle of the spiral fan blades is determined by the length of the gas pipeline or the types and quantities of the mixed gas.

[0014] Optionally, when the number of types of mixed gases is less than 3 or the length of the gas pipeline is greater than 200 mm, the spiral angle of the spiral fan blade is in the range of 30°~40°.

[0015] When the number of types of the mixed gas is at least three or the length of the gas pipeline is less than 200 mm, the spiral angle of the spiral fan blade is in the range of 40° to 56°.

[0016] Optionally, each spiral fan blade has an anti-adhesion coating on its surface, and the thickness of the spiral fan blade is in the range of 0.3mm to 0.4mm.

[0017] Optionally, the gas conveying device includes a first branch pipe and a second branch pipe for conveying different types of gases;

[0018] The first branch pipe and the second branch pipe meet at a connection point, and the gas pipe is located downstream of the connection point for mixing the mixed gas flowing in from the first branch pipe and the second branch pipe.

[0019] According to another aspect of this application, a gas delivery method is also provided, employing the gas delivery device as described above, the method comprising:

[0020] At least two gases are introduced into the gas pipeline, and gas mixing is achieved through the spiral fan blade structure;

[0021] The spring assembly deforms as it passes through a gas flow to generate elastic potential energy, and releases the elastic potential energy when the gas flow is interrupted.

[0022] The elastic potential energy drives the spiral fan blade structure to oscillate within the gas pipe, thereby clearing deposits from the gas pipe.

[0023] According to another aspect of this application, a semiconductor process apparatus is also provided, comprising:

[0024] The reaction chamber and the gas delivery device as described above;

[0025] The gas delivery device is used to mix at least two gases and then deliver them into the reaction chamber.

[0026] Compared with existing technologies, this application provides a gas delivery device comprising: a gas pipeline, a spiral fan blade structure, and a spring assembly; the spiral fan blade structure is disposed within the gas pipeline for mixing at least two gases; the spring assembly is installed at both ends of the spiral fan blade structure for deforming to generate elastic potential energy when passing through the gas flow, and releasing the elastic potential energy when the gas flow is interrupted, thereby driving the spiral fan blade structure to oscillate within the gas pipeline. This enables uniform mixing of multiple gases, replacing complex gas mixing structures, reducing initial costs and subsequent maintenance expenses and time; and achieving a self-cleaning function. Attached Figure Description

[0027] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings, wherein:

[0028] Figure 1 This diagram illustrates a gas delivery device according to one aspect of this application.

[0029] Figure 2 This illustration shows a schematic diagram of the structure inside a gas pipeline in one embodiment of this application;

[0030] Figure 3 This invention provides a schematic diagram of a gas delivery device including a branch structure in one embodiment of the present application.

[0031] Figure 4 A schematic diagram showing the helical angle of a spiral fan blade in one embodiment of this application is shown;

[0032] Figure 5 This invention provides a schematic diagram of the CO2 mass fraction in one embodiment of the present application.

[0033] Figure 6 This invention provides a schematic diagram of the Ar mass fraction in one embodiment of the present application.

[0034] Figure 7 This diagram illustrates a gas delivery method according to another aspect of this application.

[0035] Figure 8 This diagram illustrates a structure for conveying two mixed gases in one embodiment of this application.

[0036] The numbers on the map are:

[0037] 10 - Gas pipeline;

[0038] 20-Helical fan blade structure;

[0039] 30 - Spring assembly;

[0040] 201-Spiral fan blade;

[0041] 202-Fan blade shaft;

[0042] 40 - First branch pipe;

[0043] 50 - Second branch pipe;

[0044] 60 - Connecting part.

[0045] The same or similar reference numerals in the accompanying drawings represent the same or similar parts. Detailed Implementation

[0046] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0047] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein, and therefore this application is not limited to the specific embodiments disclosed below.

[0048] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0049] Furthermore, the terms “up,” “down,” “left,” “right,” “top,” “bottom,” “horizontal,” and “vertical” used in the following description should be understood as the orientations shown in the paragraph and related figures. This relative terminology is for illustrative purposes only and does not imply that the described device must be manufactured or operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0050] It is understood that although terms such as “first,” “second,” “third,” etc., may be used here to describe various pipes, channels, components, areas, layers, and / or parts, these components, areas, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different pipes, channels, components, areas, layers, and / or parts.

[0051] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Therefore, the drawings only show the components relevant to this application and are not drawn according to the actual number, shape, and size of the components in the actual implementation. In the actual implementation, the form, quantity, and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex. To keep the illustrations as concise as possible, not all structures are shown in the drawings.

[0052] Figure 1 The diagram shows a gas delivery device according to one aspect of this application, which includes a gas pipeline 10, a spiral fan blade structure 20, and a spring assembly 30.

[0053] The spiral fan blade structure 20 is disposed inside the gas pipe 10 for mixing at least two gases;

[0054] The spring assembly 30 is installed at both ends of the spiral fan blade structure 20 and is used to deform to generate elastic potential energy when passing through the gas flow, and to release the elastic potential energy when the gas flow is interrupted, thereby driving the spiral fan blade structure 20 to oscillate within the gas pipeline 10.

[0055] like Figure 2 As shown, two spring assemblies 30 are respectively installed at both ends of the spiral fan blade structure 20. The arrow indicates the direction of spring extension and contraction. The spring assemblies 30 at both ends are used to deform when passing through the gas flow to generate elastic potential energy.

[0056] It should be noted that the outer diameter of the spring used in the spring assembly is smaller than the inner diameter of the gas pipeline to ensure that the spring can be used normally in the pipeline. The spring stiffness and installation preload can be determined according to the pressure of the gas flowing in and the specific dimensions during installation. The spring material can be 316L or 316LVV.

[0057] The gas pipe 10 is used to mix multiple gases and transport them into the reaction chamber. The pipe wall can be designed to enhance turbulence intensity, providing sufficient residence time for the gases to ensure thorough mixing. The spiral fan blade structure generates a velocity gradient, creating vortices in the gas and generating fluid potential energy. This potential energy is converted into mechanical energy as it passes through the spring assembly, causing the spring assembly to deform and generate elastic potential energy. This elastic potential energy drives the spiral fan blade structure to oscillate, generating secondary vortices that agitate the gas in dead zones within the pipe, expelling residual gas and achieving a self-cleaning function.

[0058] By adding a spiral fan blade structure inside the gas pipeline, two or more gases are fully mixed after passing through the spiral fan blade before entering the reaction chamber, thereby enabling the uniformly mixed multiple gases to participate in the surface reaction of the wafer.

[0059] It should be noted that for some processes with less stringent requirements for gas mixing, this structure can be used to replace existing gas mixing blocks. Compared to mixing blocks, the spiral fan blade structure has a lower manufacturing cost and achieves mixing of multiple gases and self-cleaning within the pipeline through airflow dynamics, thereby reducing initial costs and subsequent maintenance expenses and time. Furthermore, it requires no additional energy input, solving the mixing and deposition problems in practical processes.

[0060] In one embodiment of this application, as Figure 1 As shown, the spiral fan blade mechanism 20 includes a plurality of spiral fan blades 201 and a fan blade shaft 202, wherein the plurality of spiral fan blades 201 are fixed to the fan blade shaft 202 in a spiral manner.

[0061] The fan blade 201 is a spiral blade, which can be multiple, such as 2 to 8 blades, and is fixed on the fan blade shaft 202. The fan blade shaft 202 is the central shaft that supports and fixes multiple fan blades. Each end of the fan blade shaft 202 is connected to a spring assembly 30. When the spiral fan blade 201 rotates, it generates shearing and pushing force on the gas entering the gas pipe, promoting the mixing of different gases.

[0062] The fan blade shaft 202 ensures structural stability during rotation of multiple fan blades and converts the elastic potential energy released by the spring into oscillating motion of the fan blades, while simultaneously transferring fluid kinetic energy as airflow passes through. This oscillating motion continuously agitates the gas even during periods of inactivity, preventing stratification and ensuring continuous mixing of various gases.

[0063] In one embodiment of this application, the gap between the spiral fan blade 201 and the inner wall of the gas pipe 10 is in the range of 0.15mm to 0.25mm.

[0064] The radial distance between the outermost edge of the fan blade and the inner wall of the gas pipe needs to be greater than the boundary layer thickness (0.08 mm) and less than the turbulence scale (0.3 mm). In this embodiment, for the application of mixed gas in wafer processing, this range is preferably 0.15 mm to 0.25 mm. When the gap is less than 0.15 mm, the gas diffusion time will be too short, which will not meet the thin film deposition timing requirements. When the gap is greater than 0.25 mm, the gap will be too large, resulting in large eddies and stripe defects on the wafer surface.

[0065] In one specific embodiment of this application, the gap between the spiral fan blade 201 and the inner wall of the gas pipe 10 is set to 0.2 mm.

[0066] In one embodiment of this application, as Figure 3 As shown, the gas conveying device includes a first branch pipe 40 and a second branch pipe 50, used to convey different types of gases.

[0067] The first branch pipe 40 and the second branch pipe 50 meet at the connecting part 60. The gas pipe 10 is located downstream of the connecting part 60 and is used to mix the mixed gas flowing in from the first branch pipe 40 and the second branch pipe 50.

[0068] The pipeline can be T-shaped, with the horizontal section including two end pipes: a first branch pipe and a second branch pipe. Different types of gases are transported through the branch pipes, and the different types of gases converge at the middle connection and enter the vertical section pipe downstream of the connection. A spring assembly and a fan blade structure are added inside the vertical section pipe to mix the different types of gases.

[0069] In one embodiment of this application, the fan blade structure 20 includes a gas inlet end and a gas outlet end. The spiral fan blades are distributed on the fan blade shaft with a gradually changing angle, and the spiral angle at the gas inlet end is greater than the spiral angle at the gas outlet end.

[0070] The gas inlet end of the fan-shaped structure is equipped with a spring assembly and connected to a branch pipe, thereby receiving different types of gases transported by the two branch pipes. The outlet end is equipped with another spring assembly and connected to the reaction chamber, so that the mixed gas is transported into the reaction chamber through the outlet end.

[0071] The fan blade structure is distributed along the fan blade shaft from the inlet end to the outlet end with a gradually changing angle. When the gas first enters, the angle of the fan blade structure is greater than the angle of the fan blades in the later part. As the gas enters, the fan blade angle gradually decreases.

[0072] Using a large inlet angle increases the effective air intake area, gas residence time, and precursor concentration, while preventing airflow from stripping the fan blade surface. The angle gradually decreases thereafter, creating a gradual transition that enhances gas diffusion. The angle is minimized at the outlet, resulting in uniform deposition on the wafer surface. For example, an inlet angle of 42° followed by a gradually decreasing angle, ending at 32° at the outlet. These specific inlet and outlet angle values ​​are merely examples; the actual fan blade angle should be designed according to specific circumstances, ensuring that the inlet angle is greater than the outlet angle.

[0073] In one embodiment of this application, the helical angle of the helical fan blade 201 is determined by the length of the gas pipe 10 or the types and quantities of mixed gases.

[0074] The helix angle of the fan blades can be dynamically adjusted according to the length of the gas pipeline, as well as the types and quantities of mixed gases. When there are many types of gases (especially those with large density differences), a large helix angle can prolong the residence time of the gas in the pipeline and promote molecular diffusion and mixing. When the gas pipeline is short, a larger helix angle can improve the mixing efficiency of the gas within a limited length.

[0075] Specifically, when the number of types of mixed gases is less than three or the length of the gas pipeline is greater than 200 mm, the helical angle of the spiral fan blades is in the range of 30°~40°. Figure 4 The spiral angle shown can be 32°; when the number of types of mixed gas is at least 3 or the length of the gas pipeline is less than 200mm, the spiral angle range of the spiral fan blade is 40°~56°.

[0076] The angle of the spiral fan blades is dynamically adjusted according to the number of gas types N or the pipe length L. When N < 3 or L > 200 mm, the spiral angle range is 30°~40° to maintain laminar flow stability and avoid turbulent separation. When N ≥ 3 or L ≤ 200 mm, the spiral angle is 40°~56° to compensate for insufficient mixing distance in short pipes, accelerate gas diffusion through strong turbulence, and improve the cross-mixing of multiple mixed gases.

[0077] In one embodiment of this application, each spiral fan blade has an anti-adhesion coating on its surface, and the thickness of the spiral fan blade is in the range of 0.3mm to 0.4mm.

[0078] The surface of the propeller fan blades is coated with an anti-adhesion coating to prevent particles or byproducts generated during the reaction from adhering to the blades, thus avoiding particle detachment and wafer contamination, while ensuring stable and uniform airflow. This coating is obtained by passivation treatment with nitric acid, which forms a dense passivation film on the metal surface through oxidizing agents such as nitric acid, thereby reducing the risk of coating detachment due to corrosion of the metal substrate of the fan blades.

[0079] In the embodiments of this application, single-stage fan blades are preferred, and the thickness of the fan blades needs to be greater than 0.3 mm to ensure that the fan blades do not deform or break under high-speed rotation and gas impact. If they are too thin, they will result in insufficient strength. The thickness of the fan blades also needs to be less than 0.4 mm to control the thickness in order to avoid adding too much weight and reduce gas flow resistance.

[0080] In one embodiment of this application, CO2 and Ar are simultaneously introduced onto both sides of the spiral fan blades, and the gas is mixed through the spiral fan blades. Springs are installed at both ends of the spiral fan blade structure, and a mass meter is installed at the outlet end to measure the gas mixing condition within the pipeline. Figure 5 The schematic diagram of CO2 mass fraction shown below and Figure 6 The schematic diagram of Ar mass fraction shown illustrates that the two gases are fully mixed after passing through the spiral fan blades.

[0081] Figure 7 The diagram illustrates a gas delivery method according to another aspect of this application, employing the gas delivery device as described above. The method includes steps S11 to S13.

[0082] Step S11: At least two gases are introduced into the gas pipeline, and gas mixing is achieved through the spiral fan blade structure.

[0083] The gas conduit is used to mix multiple gases and deliver them into the reaction chamber. Designs to enhance turbulence intensity can be incorporated into the conduit walls, providing sufficient residence time for the gases to ensure thorough mixing. The helical fan blade structure generates a velocity gradient, creating vortices in the gas and generating fluid potential energy.

[0084] Specifically, such as Figure 8 As shown, gases A and B enter gas pipe 10 through gas branch pipes respectively. The rotation of the spiral fan blades 20 generates bidirectional convective airflow. The counterclockwise fan blades push the gas downward and the clockwise fan blades push the gas upward, forming convection and gradually mixing. The spiral fan blade structure improves the uniformity of the two mixed gases.

[0085] Step S12: The spring assembly deforms to generate elastic potential energy when passing through the gas flow, and releases the elastic potential energy when the gas flow is interrupted.

[0086] The spring assembly is located at both ends of the spiral fan blade structure. The potential energy generated by the spiral fan blade is converted into mechanical energy when the airflow passes through the spring assembly. The spring assembly deforms under the airflow pressure to generate elastic potential energy. When the airflow is interrupted, the elastic potential energy is released.

[0087] Next, in step S13, the spiral fan blade structure is driven to oscillate within the gas pipe by the elastic potential energy, so as to remove the deposits within the gas pipe.

[0088] By releasing elastic potential energy and driving the fan blades to oscillate inside the gas pipeline, a secondary vortex can be generated to stir up the gas in the dead corners of the pipeline, expelling residual gas and achieving a self-cleaning function.

[0089] By adding a spiral fan-blade structure inside the gas pipeline, two or more gases are thoroughly mixed after passing through the spiral fan blades before entering the reaction chamber. For processes where gas mixing requirements are not high, this structure can replace existing mixing blocks. Compared to mixing blocks, the spiral fan-blade structure has a lower manufacturing cost and achieves mixing of multiple gases and self-cleaning within the pipeline through airflow dynamics, thereby reducing initial costs and subsequent maintenance expenses and time. Furthermore, it requires no additional energy input, solving the mixing and deposition problems in practical processes.

[0090] According to another aspect of this application, a semiconductor process apparatus is also provided, comprising: a gas delivery device and a reaction chamber as described above; wherein at least two gases are mixed using the gas delivery device and then delivered to the reaction chamber.

[0091] A wafer is placed inside the reaction chamber. When multiple gases need to be mixed to participate in the reaction on the wafer surface, different types of gases are introduced into the gas pipeline through branch pipes. The spiral fan blade structure inside the gas pipeline rotates to mix the multiple gases, resulting in a uniformly mixed gas. The mixed gas is then transported to the reaction chamber to participate in the reaction on the wafer surface, thereby improving the uniformity and efficiency of deposition.

[0092] It should be noted that the equipment described in this application can also be used for some processes where the requirements for gas mixing are not high, thereby reducing costs and subsequent maintenance expenses and time. The spiral fan blades can dynamically adjust their angle to adapt to different gas combinations.

[0093] The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0094] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0095] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

Claims

1. A gas delivery device, characterized by, The gas delivery device comprises a gas pipe, a spiral fan structure and a spring assembly. The spiral fan structure is arranged in the gas pipe for mixing at least two kinds of gas. The spring assembly is installed at both ends of the spiral fan structure for deforming to generate elastic potential energy when gas flows through, releasing the elastic potential energy when gas flow is interrupted, and driving the spiral fan structure to oscillate in the gas pipe by the elastic potential energy.

2. The gas delivery apparatus of claim 1, wherein, The spiral fan mechanism comprises a plurality of spiral fans and a fan shaft, and the plurality of spiral fans are fixed on the fan shaft in a spiral manner.

3. The gas delivery apparatus of claim 2, wherein, The gap between the spiral fan and the inner wall of the gas pipe ranges from 0.15mm to 0.25mm.

4. The gas delivery apparatus of claim 2, wherein, The fan structure comprises a gas inlet end and a gas outlet end, and the spiral fans adopt a gradually changing angle when distributed on the fan shaft, and the spiral angle at the gas inlet end is greater than that at the gas outlet end.

5. The gas delivery apparatus of claim 2, wherein, The spiral angle of the spiral fan is determined by the length of the gas pipe or the number of mixed gas types.

6. The gas delivery apparatus of claim 5, wherein, When the number of mixed gas types is less than 3 or the length of the gas pipe is greater than 200mm, the spiral angle of the spiral fan ranges from 30° to 40°. When the number of mixed gas types is at least 3 or the length of the gas pipe is less than 200mm, the spiral angle of the spiral fan ranges from 40° to 56°.

7. The gas delivery apparatus of claim 1, wherein, The surface of each spiral fan is provided with an anti-adhesion coating, and the thickness of the spiral fan ranges from 0.3mm to 0.4mm.

8. The gas delivery apparatus of claim 1, wherein, The gas delivery device comprises a first branch pipe and a second branch pipe for delivering different types of gas. The first branch pipe and the second branch pipe meet at a connection part, and the gas pipe is arranged downstream of the connection part for mixing the mixed gas flowing from the first branch pipe and the second branch pipe.

9. A gas delivery method using the gas delivery apparatus according to any one of claims 1 to 8, characterized by, The method comprises: At least two kinds of gas enter the gas pipe, and gas mixing is achieved by the spiral fan structure; The spring assembly deforms to generate elastic potential energy when gas flows through, and releases the elastic potential energy when gas flow is interrupted; The spiral fan structure is driven to oscillate in the gas pipe by the elastic potential energy to remove deposits in the gas pipe.

10. A semiconductor process apparatus, characterized by, It comprises: A reaction chamber and a gas delivery device as claimed in any one of claims 1 to 8; At least two kinds of gas are mixed and then delivered into the reaction chamber by using the gas delivery device.

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