X-ray emitting device, optoelectronic device and processing method of anode target material

Abstract

The invention provides an X-ray emitting device, a photoelectronic device and a processing method of an anode target material. The X-ray emitting device comprises the anode target material, an electron gun and a dimming assembly, the electron gun is used for emitting electron beams to form X-ray beams; the dimming assembly is used for receiving and processing the X-ray beam and transmitting the processed X-ray beam to a sample so as to form a light spot on the sample; at least one compensation unit is arranged on the anode target material and is used for compensating light spot deformation caused by an included angle between the dimming component and / or the X-ray beam and the vertical direction of the surface of the sample, so that the generated X-ray light spot is fully matched with the shape and the size of a sample detection area; the low detection precision caused by irradiation of the light spots in the non-detection area due to the fact that the X-ray light spots exceed the detection area is avoided, the detection precision is improved, the signal-to-noise ratio is increased, and the detection efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of X-ray excitation technology, and in particular to an X-ray emitting device, optoelectronic device, and a method for processing an anode target. Background Technology

[0002] With the continuous advancement of semiconductor chip manufacturing processes, the size of specific regions in integrated circuits is becoming smaller and smaller, which places higher demands on the detection of the composition and thickness of materials in these specific regions. X-ray photoelectron spectroscopy is widely used in semiconductor micro-area measurement.

[0003] Currently, the micro-area measurement capability of X-ray photoelectron spectroscopy equipment is mainly limited by the size and shape of the X-ray spot. If the area of ​​the X-ray spot on the sample surface is larger than the size of the detection area, the signal acquisition area will exceed the target area, severely affecting the test accuracy. Furthermore, in some cases, the X-ray spot formed by focusing on the sample surface can be deformed, making it impossible for the spot to match the shape of the detection area on the wafer, thus affecting the detection accuracy. Summary of the Invention

[0004] This application discloses an X-ray emitting device, an optoelectronic device, and a method for processing an anode target, which solves the technical problem that the X-ray spot cannot match the shape of the detection area on the wafer.

[0005] In a first aspect, this application provides an apparatus for emitting X-rays, including an anode target, an electron gun, and a dimming assembly;

[0006] The electron gun is used to emit an electron beam to form an X-ray beam;

[0007] The dimming component is used to receive and process the X-ray beam, and transmit the processed X-ray beam to the sample to form a light spot on the sample;

[0008] The anode target is provided with at least one compensation unit, which is used to compensate for the deformation of the light spot caused by the angle between the dimming component and / or the X-ray beam and the sample surface.

[0009] By setting a compensation unit on the anode target, the deformation of the light spot caused by the angle between the dimming component and / or the X-ray beam and the sample surface can be compensated, so that the generated X-ray light spot can fully adapt to the shape and size of the sample detection area, avoiding the problem of low detection accuracy caused by the X-ray light spot exceeding the detection area and irradiating the non-detection area. This improves detection accuracy, signal-to-noise ratio, and detection efficiency.

[0010] In one possible implementation of the first aspect, the anode target includes a substrate, and the compensation unit is disposed on the substrate; the compensation unit includes,

[0011] Multiple first grooves are spaced apart on the substrate;

[0012] A transition layer covers the entire area of ​​the inner surface of the first groove and forms a second groove;

[0013] An anode layer covers the entire area of ​​the inner surface of the second groove, and the anode layer is connected to the substrate through the transition layer;

[0014] The outer contour of the top of the anode layer is the top contour, which has a preset shape and a preset size. The top contour is used to compensate for the deformation of the light spot caused by the angle between the dimming component and / or the X-ray beam and the sample surface when the electron beam completely covers the anode layer.

[0015] The substrate has multiple first grooves, each containing a transition layer and an anode layer, forming multiple spaced anode regions. When the electron beam irradiates the anode layer, it generates an X-ray beam. The transition layer eliminates unevenness on the inner surface of the first grooves and enhances the connection between the anode layer and the substrate, ensuring the anode layer is stably positioned on the substrate and guaranteeing stable X-ray beam generation. The top contour of the anode layer is set to a preset shape and size, and the electron beam completely covers the anode layer, generating an X-ray beam that matches the shape and size of the top contour. This allows the light spot generated when the X-ray beam irradiates the sample detection area to match the shape and size of the detection area.

[0016] In one possible implementation of the first aspect, it further includes:

[0017] A cooling component, wherein the cooling component has a cooling channel for coolant flow, and the cooling component has a cooling inlet and a cooling outlet, and the cooling channel is connected to both the cooling inlet and the cooling outlet;

[0018] The cooling element is disposed on the lower side of the substrate and is fixedly connected to the substrate.

[0019] The cooling component, which is fixedly connected to the substrate, can efficiently dissipate the heat generated by electron beam irradiation of the anode layer, thereby reducing the temperature of the anode layer, reducing the evaporation rate of the anode layer metal, effectively suppressing the warping deformation of the anode layer caused by thermal stress, ensuring the stability of the anode layer, extending the lifespan of the anode layer, and ensuring X-ray intensity.

[0020] In one possible implementation of the first aspect, the cooling channel includes one or more first cooling channels extending along a first direction;

[0021] When there are multiple first cooling channels, the multiple first cooling channels are arranged sequentially and evenly at intervals on the cooling element along the second direction. The first direction and the second direction are perpendicular to each other, and the first direction and the second direction are perpendicular to the height direction of the anode target. The multiple first cooling channels are connected end to end.

[0022] Setting up several first cooling channels at uniform intervals along the second direction on the cooling component can ensure uniform temperature distribution and avoid local overheating. The connection of several first cooling channels end to end can utilize the periodic bending structure of the cooling channels to continuously disrupt the thermal boundary layer near the pipe wall during the flow of coolant, thereby significantly enhancing the intensity of convective heat transfer.

[0023] In one possible implementation of the first aspect, the dimming assembly includes a monochromator for wavelength selection and focusing of the X-ray beam. The monochromator has extremely high wavelength selection accuracy and good focusing effect.

[0024] Secondly, this application provides an optoelectronic device, including the X-ray emitting apparatus as described above.

[0025] Thirdly, this application provides a method for processing an anode target material for preparing an anode target material for an X-ray emitting device as described above. The processing method includes the following steps:

[0026] Polish the surface of the substrate;

[0027] A photoresist layer is coated on the polished surface of the substrate;

[0028] The photoresist layer is exposed and developed using a photomask to form a patterned photomask;

[0029] Using a patterned mask as a shield, a plurality of grooves with preset geometric features are etched on a substrate using a plasma etching process, and the plurality of grooves are spaced apart.

[0030] Remove the photoresist and clean;

[0031] A transition layer is deposited on the surface of the substrate where the groove is formed;

[0032] An anodized layer is deposited on the surface of the transition layer;

[0033] The surface of the substrate is planarized until the substrate outside the groove is exposed and the top surface of the substrate is flush with the top surface of the substrate, thereby forming a plurality of spaced anode layers on the substrate.

[0034] The anode target processing method includes the steps described above, which can form an anode layer on a substrate. The top contour of the anode layer has a preset shape and size, and can generate an X-ray beam that matches the shape and size of the top contour. This can compensate for the spot deformation caused by the dimming component and / or the angle between the X-ray beam and the sample surface, so that the generated X-ray spot fully matches the shape and size of the sample detection area, avoiding the low detection accuracy caused by the spot irradiating the non-detection area, thus improving detection accuracy and efficiency.

[0035] In one possible implementation of the third aspect, the following steps are also included:

[0036] After forming a plurality of spaced anode layers, an isolation layer is deposited on the surface of the substrate on which the anode layers are disposed, the isolation layer being used to isolate the metal vapor and / or cations of the anode layers.

[0037] The anode target processing method also includes plating an isolation layer, which can cover the surface of the anode layer to isolate the metal vapor and / or cations of the anode layer, thereby reducing the contamination and damage of the metal vapor and cations of the anode layer to surrounding devices.

[0038] Fourthly, this application provides an anode target, comprising,

[0039] A substrate having a plurality of spaced-apart first grooves;

[0040] A transition layer covers the entire area of ​​the inner surface of the first groove and forms a second groove;

[0041] An anode layer covers the entire area of ​​the inner surface of the second groove, and the anode layer is connected to the substrate through the transition layer; the outer contour of the top of the anode layer is a top contour, and the top contour has a preset shape and a preset size.

[0042] The top profile is used to compensate for the beam distortion caused by the angle between the dimming component and / or the X-ray beam and the sample surface when the electron beam completely covers the anode layer.

[0043] In one possible implementation of the first or fourth aspect, at least one of the top profiles of the anode target has a distance of less than 1µm between any two points on the top profile in the direction perpendicular to the height of the anode target, such that the anode layer to which the top profile belongs is a nanoscale anode layer, which enables the X-ray beam to irradiate the sample surface to generate a nanoscale spot, thereby meeting the detection requirements of the nanoscale detection area on the sample.

[0044] In one possible implementation of the first or fourth aspect, the shape of each of the top contours is one of polygons, circles, ellipses, and irregular shapes, such that the generated light spots can be adapted to detection areas of different shapes and sizes.

[0045] In one possible implementation of the first or fourth aspect, at least two of the top contours of the anode target have different preset shapes and / or preset sizes, so that the same anode target can be adapted to different detection areas, thereby improving the adaptability of the anode target.

[0046] In one possible implementation of the first or fourth aspect, the thickness of the transition layer is a first thickness H1, where 5nm ≤ H1 ≤ 200nm.

[0047] Setting H1 ≥ 5nm can eliminate the unevenness of the substrate surface and enable the transition layer to better connect the anode layer and the substrate, avoiding the weak connection between the anode layer and the substrate due to the first thickness H1 being too small; setting H1 ≤ 200nm can avoid the first thickness H1 being too large, which would prevent the heat on the anode layer from being transferred to the substrate well, thus ensuring good heat dissipation of the anode layer.

[0048] In one possible implementation of the first or fourth aspect, the thickness of the anode layer along the height direction of the anode target is a second thickness H2, where 500 nm ≤ H2 ≤ 10 µm.

[0049] Setting H2 ≤ 10µm avoids excessive second thickness, preventing heat from the anode layer from being unable to transfer to the substrate, thus enabling better heat dissipation of the anode layer; setting H2 ≥ 500nm gives the anode layer better irradiation resistance and improves its lifespan.

[0050] In one possible implementation of the first or fourth aspect, the transition layer is made of at least one of chromium and titanium, which can effectively connect the substrate and the anode layer.

[0051] In one possible implementation of the first or fourth aspect, the anode layer is made of at least one of tungsten, molybdenum, copper, silver, chromium, aluminum, and magnesium, which is capable of generating X-ray beams well.

[0052] In one possible implementation of the first or fourth aspect, the top of the substrate is provided with a first surface, and the top opening of the first groove is provided on the first surface;

[0053] The anode target also includes:

[0054] An isolation layer, covering the first surface and the side of the anode layer away from the transition layer, is used to isolate the metal vapor and / or cations of the anode layer.

[0055] Setting up an isolation layer can isolate the metal vapor and / or cations of the anode layer, thereby reducing the contamination and damage of the metal vapor and cations of the anode layer to surrounding devices.

[0056] In one possible implementation of the first or fourth aspect, the thickness of the isolation layer is a third thickness H3, where 1 nm ≤ H3 ≤ 500 nm.

[0057] Setting H3 ≥ 1 nm can effectively isolate the metal vapor and cations in the anode layer. Setting H3 ≤ 500 nm can prevent excessive third thickness from affecting the passage of electron beams and X-rays. Attached Figure Description

[0058] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0059] Figure 1 This is a schematic diagram of the X-ray beam irradiating the detection area in the existing design;

[0060] Figure 2 This is a schematic diagram of the structure of the X-ray emitting device in the embodiments of this application;

[0061] Figure 3 This is a top view of the anode target in an embodiment of this application;

[0062] Figure 4 This is a cross-sectional view of the anode target in an embodiment of this application;

[0063] Figure 5 This is a schematic diagram of electron beam irradiation onto an anode target in an embodiment of this application;

[0064] Figure 6 This is another cross-sectional view of the anode target in the embodiments of this application;

[0065] Figure 7 This is a side view of the anode target in an embodiment of this application;

[0066] Figure 8 This is a cross-sectional view of the cooling component in an embodiment of this application;

[0067] Figure 9 This is another schematic diagram of the structure of the X-ray emitting device in the embodiments of this application;

[0068] Figure 10 This is a diagram showing the processing sequence of the anode target in the embodiments of this application;

[0069] Figure 11 This is a partial processing sequence diagram of the anode target material in the embodiments of this application;

[0070] Figure 12 This is another processing sequence diagram of the anode target material in the embodiments of this application;

[0071] Figure 13 This is another partial processing sequence diagram of the anode target material in the embodiments of this application;

[0072] Figure 14 These are the highest temperature curves of the anode layer under different transition layer thicknesses in the embodiments of this application;

[0073] Figure 15 The transmittance of electron beams with different kinetic energies under a 400nm isolation layer in the embodiments of this application;

[0074] Figure 16 This represents the transmittance of X-rays with different kinetic energies under the 90nm isolation layer in the embodiments of this application.

[0075] Explanation of reference numerals in the attached figures:

[0076] 100 - Anode target;

[0077] 1-Substrate; 11-First groove; 12-First surface;

[0078] 2-Transition layer; 21-Second groove;

[0079] 3-Anode layer; 31-Top profile;

[0080] 4-Isolation layer; 41-Third groove;

[0081] 5-Cooling component; 51-Cooling channel; 52-Cooling inlet; 53-Cooling outlet;

[0082] 61 - Photoresist layer; 63 - Groove;

[0083] A-Detection area;

[0084] B-spot;

[0085] 200 - Electron gun; 201 - Electron beam;

[0086] 300 - Dimming unit; 7 - Monochromator;

[0087] 81 - Mask; 82 - Ultraviolet light;

[0088] 91-Sample. Detailed Implementation

[0089] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims. Clearly, the described embodiments are only a portion, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0090] With the continuous advancement of semiconductor chip manufacturing processes, the size of specific regions in integrated circuits is becoming increasingly smaller, placing higher demands on the detection of material composition and thickness in these regions. X-ray photoelectron spectroscopy (XPS) is widely used in semiconductor micro-area measurement, and common measurement equipment includes XPS, angle-resolved photoelectron spectroscopy (ARPS), and Auger electron spectroscopy (AES). Currently, the micro-area measurement capability of XPS equipment is mainly limited by the size and shape of the X-ray spot. If the area of ​​the X-ray spot on the sample surface is larger than the size of the area to be measured, the signal acquisition area will exceed the target area, severely affecting the testing accuracy.

[0091] Because there is an angle between the X-ray beam and the sample surface, it is difficult for optical devices to achieve an ideal state. Additionally, when the monochromator and other dimming components focus the wavelength, they will generate additional projections on the sample surface, causing the focused X-ray spot to be distorted. Consequently, the focused X-ray spot cannot match the shape of the detection area on the wafer, affecting the detection accuracy. Figure 1 This is a schematic diagram of the X-ray beam irradiating the detection area in the existing design. Figure 1 The results showed that the spot formed by the X-ray beam irradiating the sample did not match the detection area, and the spot could not completely cover the detection area.

[0092] To address the aforementioned technical problems, this application proposes an X-ray emitting device, an optoelectronic device, and a method for processing an anode target. A compensation unit is provided on the anode target to compensate for beam deformation caused by the angle between the dimming component and / or the perpendicular direction of the X-ray beam to the sample surface. This ensures that the generated beam spot fully adapts to the shape and size of the detection area on the sample, avoiding the problem of low detection accuracy caused by the X-ray beam spot exceeding the detection area and irradiating the non-detection area. This improves detection accuracy, signal-to-noise ratio, and detection efficiency.

[0093] The apparatus for emitting X-rays, optoelectronic devices, and anode target processing methods provided in this application will now be described with reference to the accompanying drawings and specific embodiments.

[0094] refer to Figure 2 and Figure 5 This application proposes an X-ray emitting device, including an anode target 100, an electron gun 200, and a dimming assembly 300. The electron gun 200 emits an electron beam 201. The anode target 100 is provided with at least one compensation unit, which receives the electron beam 201 and generates an X-ray beam based on the electron beam 201. The dimming assembly 300 receives and processes the X-ray beam and transmits the processed X-ray beam to a sample 91 to form a spot B on the sample 91. The compensation unit compensates for the deformation of the spot B caused by the angle between the dimming assembly 300 and / or the X-ray beam and the surface of the sample 91. This compensation can also be understood as shaping the X-ray beam so that the shaped X-ray beam irradiating the sample 91 forms a spot B that matches the shape and size of the detection area A. More specifically, shaping the X-ray beam can also be understood as maintaining the initial shape and size of the X-ray beam at the time of emission, or making the shape and size of the X-ray beam different from its shape and size at the time of emission.

[0095] A compensation unit is provided on the anode target 100 to compensate for the deformation of the light spot B caused by the angle between the dimming component 300 and / or the X-ray beam and the surface of the sample 91. This ensures that the generated light spot B fully adapts to the shape and size of the detection area A on the sample 91, preventing the X-ray light spot B from exceeding the detection area A and causing the light spot B to irradiate the non-detection area, resulting in low detection accuracy, improved detection accuracy, improved signal-to-noise ratio, and improved detection efficiency.

[0096] In some implementations, reference Figure 2 The height direction of the anode target 100 is from the bottom end to the top end of the anode target 100.

[0097] refer to Figure 3 and Figure 4 The anode target 100 includes a substrate 1, and a compensation unit is disposed on the substrate 1. The compensation unit includes a first groove 11, a transition layer 2, and an anode layer 3. Multiple first grooves 11 are provided, and the multiple first grooves 11 are spaced apart on the substrate 1. Specifically, the first groove 11 can be a cylindrical groove. The transition layer 2 covers the entire area of ​​the inner surface of the first groove 11 and forms a second groove 21. Specifically, the second groove 21 can be a cylindrical groove. The anode layer 3 covers the entire area of ​​the inner surface of the second groove 21. Furthermore, the anode layer 3 is connected to the substrate 1 through the transition layer 2. The transition layer 2 is used to eliminate the unevenness of the inner surface of the first groove 11, and the transition layer 2 can enhance the connection strength between the anode layer 3 and the substrate 1.

[0098] refer to Figure 2 , Figure 3 and Figure 4The X-ray emitting apparatus provided in this application includes an electron gun 200. The electron gun 200 is used to emit an electron beam 201. The electron beam 201 irradiates the anode layer 3, causing the anode layer 3 to generate an X-ray beam. The X-ray emitting apparatus also includes a dimming component 300. The dimming component 300 is used to select the wavelength and focus the X-ray beam. The X-ray beam processed by the dimming component 300 irradiates the surface of the sample 91 to form a light spot B.

[0099] Specifically, the anode layer 3 can be used to generate an X-ray beam when irradiated by the electron beam 201. The X-ray beam is then used to irradiate the surface of the sample 91 after being processed by the dimming component 300 to form a light spot B.

[0100] The substrate 1 can be made of diamond. Diamond has good thermal conductivity, which can efficiently dissipate the heat generated by the electron beam 201 irradiating the anode layer 3, thereby reducing the temperature of the anode layer 3, reducing the evaporation rate of the metal in the anode layer 3, effectively suppressing the warping deformation of the anode layer 3 caused by thermal stress, ensuring the stability of the anode layer 3, extending the service life of the anode layer 3, and ensuring X-ray intensity. Specifically, the substrate 1 can be made of single-crystal diamond.

[0101] The material of each transition layer 2 can be a metal. Specifically, the material of the transition layer 2 can be at least one of chromium and titanium, which can better connect the substrate 1 and the anode layer 3. If the material of the transition layer 2 is titanium, titanium has a low coefficient of thermal expansion and stable chemical properties; if the material of the transition layer 2 is chromium, the connection strength between the anode layer 3 and the substrate 1 is better.

[0102] The anode layer 3 is made of metal. The anode layer 3 can be made of at least one of tungsten, molybdenum, copper, silver, chromium, aluminum, and magnesium. When the accelerated electron beam strikes the metal target, the electron beam suddenly decelerates during the impact, and the lost kinetic energy is released as photons, thus generating an X-ray spectrum with continuous characteristics. Different materials can be used for the anode layer 3 in different first grooves 11. If the anode layer 3 is made of tungsten and / or molybdenum, it can produce high-intensity, high-energy X-rays. If the anode layer 3 is made of at least one of copper, silver, or chromium, it can produce X-rays with extremely high intensity and excellent monochromaticity.

[0103] refer to Figure 5 The outer contour of the top of the anode layer 3 can be referred to as the top contour 31. The top contour 31 has a preset shape and a preset size. The top contour 31 is used to compensate for the deformation of the light spot B caused by the angle between the dimming component 300 and / or the X-ray beam and the surface of the sample 91 when the electron beam 201 completely covers the anode layer 3.

[0104] Specifically, the electron beam spot is a circular spot with a Gaussian-like distribution. The X-ray beam emitted from the large-size anode layer excited by the electron beam has a circular spot. Here, "large-size anode layer" can be understood as having a surface size larger than the size of the electron beam spot generated by the electron beam irradiating the anode layer. The dimming component compresses the X-ray beam in one direction, such as the diffraction direction, while being relatively lenient in another direction, such as the non-dispersive direction. This lenientness can be understood as the dimming component having a relatively weak or no compression effect on the X-ray beam. The circular X-ray beam, after passing through the dimming component, forms an X-ray beam with an elliptical cross-section. When the X-ray beam irradiating the sample has an angle with the perpendicular direction to the sample surface, it further ellipticalizes the spot, resulting in an elliptical spot on the sample surface. When the X-ray beam irradiating the sample is parallel to the perpendicular direction to the sample surface (X-rays irradiate the sample surface perpendicularly), it does not further ellipse the spot. In this application, the shape of the anode layer in the compensation unit is changed in advance so that the spot of the X-ray beam emitted by the anode layer is elliptical. Then, when the X-ray beam passes through the dimming component and there is an angle between the X-ray beam and the perpendicular direction of the sample surface, the spot of the X-ray beam irradiating the sample surface is circular.

[0105] The sample detection area A can have various shapes. Based on the shape and size of the sample detection area A, the dimming component 300, and the angle between the X-ray beam and the vertical direction of the sample 91 surface, a preset shape and size of the top contour of the anode layer are obtained. For example, the preset shape and size of the top contour of the anode layer are determined based on a closed-loop iterative design method. This method integrates the dimming component 300, the angle between the X-ray beam and the vertical direction of the sample 91 surface, the shape and size of the detection area A, and the measurement data of the actual generated light spot. Through feedback optimization, the precise design of the top contour is ultimately achieved. Specifically, taking the detection area A as the target, the angle between the dimming component 300, the X-ray beam, and the vertical direction of the sample 91 surface is used as a quantitative measure, while the shape and size of the top contour of the anode layer are considered as adjustable variables. The result is predicted through simulation, resulting in the light spot B formed by the X-ray beam irradiating the sample 91 surface. An automated algorithm continuously optimizes the shape and size of the top contour of the anode layer until the output result is within a preset difference from the target, thus obtaining the preset shape and size of the top contour of the anode layer.

[0106] In one embodiment, the method for designing the top profile of the anode layer of the anode target includes the following steps:

[0107] S1: Establish the initial top contour model of the anode layer and input it into the optical path simulation software;

[0108] S2: In the optical path simulation software, define the parameters of electron gun 200, dimming component 300, the angle between the X-ray beam and the sample 91 surface perpendicular to the target detection area;

[0109] S3: Run the simulation to obtain the simulated spot shape and energy distribution on the target detection area;

[0110] S4: Compare the simulated light spot with the target detection area, and iteratively correct the geometric parameters of the top contour model of the anode layer based on the comparison results;

[0111] S5: When the matching degree between the simulated light spot and the target detection area reaches the preset threshold, the final top contour shape data of the anode layer is output for processing and manufacturing.

[0112] In this application, a substrate 1 is provided with a plurality of first grooves 11, and a transition layer 2 and an anode layer 3 are provided in the first grooves 11, which can form a plurality of spaced anode areas. When the electron beam 201 irradiates the anode layer 3, the anode layer 3 can generate an X-ray beam. The transition layer 2 can eliminate the unevenness of the inner surface of the first grooves 11 and enhance the connection strength between the anode layer 3 and the substrate 1, so that the anode layer 3 is stably placed on the substrate 1, ensuring the stable generation of the X-ray beam. The top contour 31 of the anode layer 3 is set with a preset shape and preset size, and the electron beam 201 completely covers the anode layer 3, which can generate an X-ray beam that matches the shape and size of the top contour 31. This can compensate for the deformation of the light spot B caused by the angle between the dimming component 300 and / or the X-ray beam and the sample 91 surface, so that the generated X-ray light spot B fully matches the shape and size of the detection area A of the sample 91, avoiding the low detection accuracy caused by the light spot B irradiating the non-detection area beyond the detection area A, thus improving detection accuracy, signal-to-noise ratio, and detection efficiency.

[0113] refer to Figure 3 , Figure 4 and Figure 5 Each top contour 31 can be polygonal, circular, elliptical, or irregular in shape to meet the requirements of the detection area A on the sample 91. Specifically, the irregular top contour 31 can be formed by straight line segments and / or arc segments.

[0114] For example, the detection area A of sample 91 is actually circular. Considering the influence of the angle between the dimming component 300 and / or the X-ray beam and the vertical direction of the sample 91 surface, the top contour 31 is preset to be elliptical, so that the light spot B formed on the surface of sample 91 is circular and matches the shape of the detection area A of sample 91.

[0115] Furthermore, the size and / or shape of the top contour 31 can be preset so that the size and / or shape of the light spot B illuminating the surface of the sample 91 is adapted to the size and / or shape of the detection area A of the sample 91, thereby improving detection accuracy and efficiency.

[0116] For example, the detection area A of sample 91 is actually a square. Considering the influence of the angle between the dimming component 300 and / or the X-ray beam and the vertical direction of the sample 91 surface, the top contour 31 is preset to be a polygon (asymmetrical polygon), so that the light spot B formed by irradiating the sample 91 surface is square and matches the shape of the detection area A of sample 91. In addition, the size of the top contour 31 is preset so that the size of the light spot B irradiating the sample 91 surface matches the size of the detection area A of sample 91, thereby improving detection accuracy and efficiency.

[0117] In some implementations, reference Figure 3 , Figure 4 and Figure 5 Among all the top contours 31 of the anode target 100, at least one top contour 31 has a distance of less than 1µm between any two points in the direction perpendicular to the height of the anode target 100, so that the anode layer 3 to which the top contour 31 belongs is a nanoscale anode layer, which enables the X-ray beam to irradiate the surface of the sample 91 to generate a nanoscale light spot, which can meet the detection requirements of the nanoscale detection area on the sample 91.

[0118] In some implementations, reference Figure 3 , Figure 4 and Figure 5 Among all the top contours 31 of the anode target 100, at least two top contours 31 have different preset shapes and / or preset sizes, so that an anode target 100 can be adapted to different detection areas A, thereby increasing the adaptation range of the anode target 100, making full use of the space on the anode target 100, and saving costs.

[0119] In some implementations, reference Figure 3 , Figure 4 and Figure 5 The thickness of the transition layer 2 is a first thickness H1, where 5nm ≤ H1 ≤ 200nm. H1 ≥ 5nm can eliminate the unevenness of the substrate 1 surface and prevent the connection between the anode layer 3 and the substrate 1 from being too weak due to an insufficient first thickness H1. H1 ≤ 200nm avoids the first thickness H1 being too large, which would prevent the heat on the anode layer 3 from being properly transferred to the substrate 1, thus ensuring good heat dissipation of the anode layer 3.

[0120] When the material of transition layer 2 is chromium and the material of anode layer 3 is aluminum, the relationship between the thickness of transition layer 2 and the maximum temperature of anode layer 3 is shown in the figure below. Figure 14 . Figure 14The results show that the greater the thickness of the transition layer 2, the higher the maximum temperature of the anode layer 3. Therefore, limiting the thickness of the transition layer 2 to within 200 nm allows for better heat dissipation of the anode layer 3. Chromium enhances the bonding strength, primarily because it forms chromium tricarbide, which improves interfacial strength and provides a hot electron transfer channel.

[0121] In some implementations, reference Figure 3 , Figure 4 and Figure 5 The thickness of the anode layer 3 along the height direction of the anode target 100 is the second thickness H2. H2 ≤ 10µm is used to avoid the second thickness being too large, which would prevent heat from the anode layer 3 from being unable to be transferred to the substrate 1, thus enabling the anode layer 3 to have better heat dissipation. H2 ≥ 500nm gives the anode layer 3 a certain degree of irradiation resistance, thereby improving the life cycle of the anode layer 3.

[0122] In some implementations, reference Figure 3 , Figure 4 and Figure 5 The substrate 1 has a first surface 12 on its top. The top opening of the first groove 11 is located on the first surface 12. The anode target 100 also includes an isolation layer 4. The isolation layer 4 covers the first surface 12 and the side of the anode layer 3 away from the transition layer 2. The isolation layer 4 is used to isolate the metal vapor and / or cations of the anode layer 3.

[0123] An electron beam 201 penetrates the isolation layer 4 and irradiates the anode layer 3 to generate an X-ray beam, which then exits through the isolation layer 4. The isolation layer 4 can be a conductive doped diamond layer or a silicon nitride layer. Specifically, the conductive doped diamond layer is formed by adding dopants during its formation to create a diamond layer with a certain degree of conductivity. The dopants can be materials such as boron, nitrogen, or phosphorus.

[0124] The isolation layer 4 can isolate the metal vapor and / or cations of the anode layer 3, thereby reducing the contamination and damage of the anode layer metal vapor and cations to peripheral devices such as the electron gun.

[0125] In some implementations, reference Figure 3 , Figure 4 and Figure 5 The thickness of the isolation layer 4 is a third thickness H3. H3 ≥ 1 nm enables the isolation layer 4 to isolate the metal vapor and cations of the anode layer 3. H3 ≤ 500 nm prevents the third thickness from being too large, which would affect the passage of the electron beam 201 and X-rays.

[0126] For example, when the insulating layer is made of silicon nitride, electron beams with different kinetic energies have higher transmittance through the 400nm insulating layer. Figure 15 .

[0127] When the insulating layer is made of 400 nm thick silicon nitride, the transmittance of X-rays with different kinetic energies through a 90 nm insulating layer is shown in the figure. Figure 16 . Figure 16 The data shows that the higher the X-ray kinetic energy, the greater the transmittance.

[0128] In some implementations, reference Figure 13 The outer surface of the isolation layer 4 is planar, or the outer surface of the isolation layer 4 has a third groove 41 corresponding to the second groove 21. The depth of the third groove 41 is a first depth L1, where L1 ≤ 30 nm. The first depth L1 is set to avoid being too large, so as to prevent the third groove 41 from being too deep and affecting the generation and spatial shape of X-rays. Specifically, the third groove 41 can be a cylindrical groove.

[0129] In some implementations, reference Figure 6 and Figure 7 The anode target 100 also includes a cooling element 5. The cooling element 5 has a cooling channel 51 for coolant flow. The cooling element 5 has a cooling inlet 52 and a cooling outlet 53, both of which are connected to the cooling channel 51. The cooling element 5 is located at the bottom end of the substrate 1, away from the top end. The cooling element 5 is fixedly connected to the substrate 1. The coolant can be water. The high heat generated by the anode layer 3 under electron beam 201 irradiation is directly transferred to the cooling element 5 through heat conduction. The coolant flows through the cooling channel 51, and the coolant carries away a large amount of heat through convection heat transfer, thereby achieving continuous cooling of the cooling element 5.

[0130] The cooling element 5, which is fixedly connected to the substrate 1, can efficiently dissipate the heat generated by the anode layer 3, reduce the temperature of the anode layer 3, thereby reducing the evaporation rate of the metal in the anode layer 3, effectively suppressing the warping deformation of the anode layer 3 caused by thermal stress, ensuring the stability of the anode layer 3, extending the life cycle of the anode layer 3, and ensuring X-ray intensity.

[0131] The cooling component 5 and the substrate 1 can be connected by welding. Specifically, the cooling component 5 and the substrate 1 are connected by brazing, and the thickness of the brazing weld is between 10μm and 60μm.

[0132] The material of the cooling component 5 can be copper. Copper has good thermal conductivity, which can further improve the heat dissipation performance of the anode layer 3, reduce the temperature of the anode layer 3, improve the stability of the anode layer 3, and ensure the intensity of X-rays. Specifically, the material of the cooling component 5 can be oxygen-free copper.

[0133] In some implementations, reference Figure 7 and Figure 8To improve the heat transfer efficiency between the cooling element 5 and the substrate 1, the top surface of the cooling element 5 is fitted to the bottom surface of the substrate 1. To further improve the heat transfer efficiency, the cooling channel 51 is made as long as possible on the cooling element. Specifically, the cooling channel 51 may include one or more first cooling channels 511. The first cooling channel 511 extends along a first direction. When multiple first cooling channels 511 are provided, they are arranged sequentially and evenly at intervals along a second direction on the cooling element 5. The first and second directions are perpendicular, and both directions are perpendicular to the height direction of the anode target 100. The multiple first cooling channels 511 are connected end-to-end, and their periodic bending structure continuously disrupts the thermal boundary layer near the pipe wall during coolant flow, thereby significantly enhancing convective heat transfer intensity. The arrangement of multiple first cooling channels 511 sequentially and evenly at intervals along the second direction on the cooling element 5 ensures uniform temperature distribution and avoids localized overheating.

[0134] Specifically, among the three adjacent first cooling channels 511, the first cooling channel 511 located in the middle is the middle first cooling channel. The two ends of the middle first cooling channel are respectively connected to the ends of the first cooling channels 511 on both sides of the middle first cooling channel to increase the flow path of the coolant and improve the heat exchange effect.

[0135] In some embodiments, the anode target 100 further includes a driving assembly. The driving assembly is fixedly connected to the cooling element 5 and / or the substrate 1. The driving assembly drives the substrate 1 to move in the height direction of the anode target 100, the driving assembly can drive the substrate 1 to move in the length direction of the anode target 100, and the driving assembly can also drive the substrate 1 to move in the width direction of the anode target 100, so that the electron beam 201 emitted by the electron gun 200 can irradiate different anode layers 3.

[0136] Multiple anode layers 3 can be arranged in a matrix on the substrate 1. The spacing between the centers of two adjacent top contours 31 is equal, which facilitates the driving component to drive the substrate 1 to move, so that the electron beam 201 generated by the electron gun 200 irradiates different anode layers 3.

[0137] In some implementations, reference Figure 2 and Figure 9 The X-ray emitting device proposed in this application can be an X-ray source. The X-ray source includes the anode target 100 described above. The X-ray source also includes the electron gun 200 described above. The electron gun 200 is capable of emitting an electron beam 201. The electron beam 201 irradiates the anode layer 3 on the anode target 100 to generate an X-ray beam. The X-ray beam generated by the anode layer 3 is a primary color X-ray beam.

[0138] refer to Figure 2The X-ray source may also include a dimming component 300. The dimming component 300 performs wavelength selection on the X-ray beam generated by the anode layer 3 to form a monochromatic X-ray beam. Furthermore, the dimming component 300 focuses the X-ray beam generated by the anode layer 3. The X-ray beam focused by the dimming component 300 irradiates the surface of the sample 91 to form a light spot B. The light spot B can irradiate the detection area A of the sample 91 to detect the detection area A.

[0139] The X-ray source is equipped with an anode target 100. The X-ray source generates an X-ray beam. The X-ray beam irradiates the surface of the sample 91, and the resulting X-ray spot B is matched with the detection area A on the sample 91. This avoids the spot B irradiating the non-detection area outside the detection area A, which would result in low detection accuracy. This improves detection accuracy and efficiency.

[0140] In some implementations, reference Figure 2 The dimming assembly 300 may include a monochromator 7 for wavelength selection and focusing of the X-rays generated by the anode layer 3. Devices using this X-ray source can be X-ray photoelectron spectrometers. Devices using this X-ray source can also be angle-resolved photoelectron spectrometers.

[0141] The dimming assembly 300 may include a monochromator 7, which is used to select and focus the wavelength of the X-rays generated by the anode layer 3. The monochromator 7 has extremely high wavelength selection accuracy and good focusing effect.

[0142] In some embodiments, this application also proposes an optoelectronic device including the aforementioned X-ray emitting apparatus, thus possessing the corresponding technical effects and advantages described above. The optoelectronic device includes, but is not limited to, an X-ray photoelectron spectrometer, an angle-resolved photoelectron spectrometer, or an Auger electron spectrometer.

[0143] In some embodiments, this application also provides a method for processing an anode target, used to prepare the aforementioned anode target. (Reference) Figure 9 , Figure 10 and Figure 11 The processing method for anode target 100 includes the following steps:

[0144] S1: Polish the surface of substrate 1;

[0145] S2: Coat a photoresist layer 61 on the polished surface of substrate 1;

[0146] S3: The photoresist layer 61 is exposed and developed by the mask 81 to form a patterned mask;

[0147] S4: Using a patterned mask as a shield, a plurality of grooves 63 with preset geometric features are etched on the substrate 1 by plasma etching process, and the plurality of grooves 63 are spaced apart.

[0148] S5: Peel off the photoresist on substrate 1 and clean substrate 1;

[0149] S6: A transition layer 2 is plated on the surface of the substrate 1 where the groove 63 is provided;

[0150] S7: Plate an anode layer 3 on the surface of transition layer 2;

[0151] S8: The surface of the substrate 1 is planarized until the substrate outside the groove 63 is exposed and the top surface of the anode layer 3 is flush with the top surface of the substrate 1, forming multiple spaced anode layers 3 on the substrate 1.

[0152] Specifically, in step S1, the surface of the substrate 1 is polished using a chemical mechanical polishing process. The purpose is to obtain an atomically smooth and undamaged substrate surface, which can significantly improve the strength of the connection between the transition layer 2 and the substrate 1 and the anode layer 3. This allows the anode layer 3 to maintain excellent thermal conductivity uniformity and structural stability under electron beam irradiation 201, ultimately ensuring stable X-ray beam output and extending the lifespan of the anode layer 3.

[0153] Specifically, chemical mechanical polishing (CMP) equipment can be used to polish substrate 1. The polishing slurry uses colloidal silica-based alkaline slurry with a pH value controlled between 10.5 and 11.5. Under alkaline conditions, the diamond surface undergoes slight oxidation, forming an easily removable amorphous carbon soft layer, effectively avoiding microcracks and subsurface damage that may be caused by pure mechanical grinding. The downward polishing pressure is 3-5 psi (pounds per square inch), which is sufficient to ensure effective contact between the polishing pad and substrate 1, while minimizing the abrasive's penetration depth and shear stress on the surface, greatly avoiding subsurface lattice damage, which significantly increases interfacial thermal resistance. The polishing disc rotation speed is maintained at 80-100 rpm (revolutions per minute), matching the rotation speed with the pressure to achieve uniform global planarization, avoiding defects such as dish-shaped pits, and ultimately making the substrate surface roughness less than 0.3 nm.

[0154] In step S3, the pattern on the photomask 81 is pre-set so that the X-ray spot B matches the detection area. Ultraviolet (UV) light 82 is used to expose the photoresist layer through the photomask, and after development, a patterned photomask is formed. A photolithography machine is then used to expose the photoresist layer.

[0155] In step S4, the depth of the groove 63 depends on the plasma power and etching time. The plasma etching parameters include: the processing gas is one or more of oxygen, nitrogen, argon, and carbon tetrafluoride; the gas flow rate is 10 sccm-200 sccm (Standard Cubic Centimeter per Minute, abbreviated as sccm); the radio frequency power is 200W-800W; the ambient pressure is 0.2Pa-3.0Pa; and the etching time is 30s-600s.

[0156] In step S5, the photoresist is stripped and cleaned using a photoresist cleaning solution.

[0157] In step S6, the transition layer 2 can be prepared using magnetron sputtering, chemical vapor deposition, or vacuum evaporation. Specifically, when prepared using chemical vapor deposition, plasma-enhanced chemical vapor deposition can be used. The thickness of the transition layer 2 is a first thickness H1.

[0158] In step S7, the anode layer 3 can be prepared using magnetron sputtering, chemical vapor deposition, or vacuum evaporation. Specifically, when prepared using chemical vapor deposition, plasma-enhanced chemical vapor deposition or microwave plasma-enhanced chemical vapor deposition can be used. The thickness of the anode layer 3 is the second thickness H2. The magnetron sputtering process of the anode layer 3 is as follows: under inert gas atmosphere, working pressure of 0.1 Pa-1.0 Pa, substrate temperature of 150°C-400°C, and target power density of 3 W / cm²-10 W / cm², tungsten or molybdenum is deposited on the transition layer by magnetron sputtering to form a dense anode layer with internal stress below 500 MPa.

[0159] In step S8, the substrate 1 is planarized using a chemical mechanical polishing device. The purpose of step S8 is not only to remove excess anode layer material around the groove, but also to accurately retain and realize the groove shape formed by the photolithography and etching steps in order to obtain the top contour of the anode layer and ensure that the accuracy of the top contour of the anode layer meets the requirements of spot compensation.

[0160] The surface of the anode layer is scanned in three dimensions using a white light interferometer or a laser confocal microscope. The obtained top contour data is compared with the design model. If the deviation of the key feature data is within a reasonable range, the anode layer is deemed qualified.

[0161] The method for processing the anode target 100 includes the steps described above, which can form an anode layer 3 on the substrate 1. The top contour 31 of the anode layer 3 has a preset shape and a preset size, which can generate an X-ray beam that matches the shape and size of the top contour 31. This can compensate for the deformation of the light spot B caused by the angle between the dimming component 300 and / or the X-ray beam and the surface of the sample 91, so that the generated X-ray light spot B fully matches the shape and size of the detection area A of the sample 91, avoiding the low detection accuracy caused by the light spot B irradiating the non-detection area due to the light spot B exceeding the detection area A, thereby improving detection accuracy and detection efficiency.

[0162] In some implementations, reference Figure 12 and Figure 13 The processing method for the anode target 100 also includes the following steps:

[0163] After forming multiple spaced anode layers 3, an isolation layer 4 is deposited on the surface of the anode layer 3 on the substrate 1. The isolation layer 4 is used to isolate the metal vapor and / or cations of the anode layer 3.

[0164] Specifically, the isolation layer 4 can be prepared using magnetron sputtering, chemical vapor deposition, or vacuum evaporation. Specifically, when prepared using chemical vapor deposition, plasma-enhanced chemical vapor deposition can be employed. The thickness of the isolation layer 4 is the third thickness H3.

[0165] The processing method for setting the anode target 100 also includes plating an isolation layer 4, which can cover the surface of the anode layer and isolate the metal vapor and / or cations of the anode layer 3, thereby reducing the contamination and damage of the anode layer metal vapor and cations to peripheral devices such as the electron gun 200.

[0166] Specifically, under the conditions of reaction pressure of 100Pa-1000Pa and substrate temperature of 450°C-600°C, silane and methane are introduced as reaction source gases, and a silicon carbide isolation layer is formed by chemical vapor deposition.

[0167] A boron-doped diamond isolation layer is formed by introducing borane or trimethylborane as a dopant source in a hydrogen and methane mixed atmosphere at a substrate temperature of 800°C-1000°C.

[0168] It should be noted that the numerical values ​​and ranges involved in this application are approximate values. Due to the influence of the manufacturing process, there may be a certain range of errors, which can be considered negligible by those skilled in the art.

[0169] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0170] In the description of this application, it should be understood that the terms “center,” “length,” “width,” “thickness,” “top,” “bottom,” “upper,” “lower,” “left,” “right,” “front,” “rear,” “vertical,” “horizontal,” “inner,” “outer,” “axial,” and “circumferential,” etc., used to indicate orientation or positional relationships are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the indicated position or component must have a specific orientation, or a specific structure and operation, and therefore should not be construed as a limitation of the present invention.

[0171] The devices or elements referred to in the embodiments of this application or implied herein must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the embodiments of this application. In the description of the embodiments of this application, "a plurality of" means two or more, unless otherwise precisely specified.

[0172] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in a sequence other than those illustrated or described herein.

[0173] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0174] The term "multiple" in this article refers to two or more. The term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. Furthermore, the character " / " in this article generally indicates an "or" relationship between the preceding and following related objects; in formulas, the character " / " indicates a "division" relationship between the preceding and following related objects.

[0175] It is understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application.

[0176] It is understood that, in the embodiments of this application, the order of the above-mentioned process numbers does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

Claims

1. An apparatus for emitting X-rays, characterized by: The anode target (100), an electron gun (200) and a light modulation assembly (300) are included. The electron gun (200) is used to emit an electron beam (201) to form an X-ray beam. The light modulation assembly (300) is used to receive and process the X-ray beam, and transmit the processed X-ray beam to a sample (91) to form a light spot (B) on the sample (91). The anode target (100) is provided with at least one compensation unit for compensating the deformation of the light spot (B) caused by the angle between the light modulation assembly (300) and / or the X-ray beam and the vertical direction of the surface of the sample (91).

2. The apparatus of claim 1, wherein: The anode target (100) includes a base material (1), and the compensation unit is arranged on the base material (1); the compensation unit includes, a plurality of first grooves (11) arranged on the base material (1) at intervals; a transition layer (2) covering all areas of the inner surface of the first groove (11) and forming a second groove (21); an anode layer (3) covering all areas of the inner surface of the second groove (21), and the anode layer (3) is connected to the base material (1) through the transition layer (2); The outer contour of the top of the anode layer (3) is a top contour (31), and the top contour (31) has a preset shape and a preset size, and the top contour (31) is used to compensate the deformation of the light spot (B) caused by the angle between the light modulation assembly (300) and / or the X-ray beam and the vertical direction of the surface of the sample (91) when the electron beam (201) completely covers the anode layer (3).

3. The apparatus of claim 2, wherein: Among all the top contours (31) of the anode target (100), the distance between any two points on at least one of the top contours (31) in the vertical direction of the height of the anode target (100) is less than 1µm.

4. The apparatus of claim 2, wherein: The shape of each top contour (31) is one of polygon, circle, ellipse and special shape.

5. The apparatus of claim 2, wherein: Among all the top contours (31) of the anode target (100), the preset shape and / or the preset size of at least two of the top contours (31) are different.

6. The apparatus of claim 2, wherein: The thickness of the transition layer (2) is a first thickness H1, and 5nm≤H1≤200nm.

7. The apparatus of claim 2, wherein: The thickness of the anode layer (3) in the height direction of the anode target (100) is a second thickness H2, and 500nm≤H2≤10µm.

8. The device of any one of claims 2-7, wherein: The material of each transition layer (2) is at least one of chromium and titanium.

9. The device of any one of claims 2-7, wherein: The material of each anode layer (3) is at least one of aluminum, copper, magnesium, silver and chromium.

10. The device of any one of claims 2-7, wherein: The top of the base material (1) is provided with a first surface (12), and the top of the first groove (11) is open on the first surface (12); The anode target (100) further includes: an isolation layer (4) covering the first surface (12) and the side of the anode layer (3) away from the transition layer (2), used to isolate the metal vapor and / or cations of the anode layer (3).

11. The apparatus of claim 10, wherein: The thickness of the isolation layer (4) is a third thickness H3, and 1nm≤H3≤500nm.

12. The device of any one of claims 2-7, wherein: Further including, A cooling member (5) is provided inside a cooling channel (51) for coolant flow, and a cooling inlet (52) and a cooling outlet (53) are provided on the cooling member (5), and the cooling channel (51) is in communication with the cooling inlet (52) and the cooling outlet (53); The cooling member (5) is arranged on the lower side of the base material (1), and the cooling member (5) is fixedly connected with the base material (1).

13. The apparatus of claim 12, wherein: The cooling channel (51) comprises one or more first cooling channels (511) extending in a first direction; When the first cooling channel (511) is multiple, multiple first cooling channels (511) are arranged in sequence and uniformly spaced on the cooling member (5) in a second direction, the first direction and the second direction are perpendicular, and the first direction, the second direction and the height direction of the anode target material are perpendicular, and multiple first cooling channels (511) are connected in a loop.

14. The apparatus of claim 1, wherein: The light modulation assembly (300) comprises a monochromator (7) for wavelength selection and focusing of the X-ray beam.

15. An optoelectronic device, characterized by: A device as claimed in any one of claims 1-14.

16. A method of processing an anode target material, characterized by: A method for manufacturing an anode target material in a device as claimed in any one of claims 1-14, the method comprising the steps of, polishing the surface of the base material (1); coating a photoresist layer (61) on the polished surface of the base material (1); exposing and developing the photoresist layer (61) through a mask (81) to form a patterned mask; using a plasma etching process to etch a plurality of grooves (63) with predetermined geometric features on the base material (1) with the patterned mask as a shield, and the plurality of grooves (63) are arranged in a spaced manner; stripping the photoresist and cleaning; plating a transition layer (2) on the surface of the base material (1) where the grooves (63) are arranged; plating an anode layer (3) on the surface of the transition layer (2); performing a planarization process on the surface of the base material (1) until the base material (1) outside the grooves (63) is exposed and the top surface of the base material (1) is flush with the top surface of the base material (1), forming a plurality of spaced anode layers (3) on the base material (1).

17. The method of claim 16, wherein: Further comprising the following steps, after forming a plurality of spaced anode layers (3), plating an isolation layer (4) on the surface of the base material (1) where the anode layer (3) is arranged, and the isolation layer (4) is used to isolate the metal vapor and / or cations of the anode layer (3).

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