Construction method of polar liquid p-n junction and thermovolt effect of polar liquid p-n junction

Abstract

The invention discloses a construction method of a polar liquid p-n junction and a thermovolt effect of the polar liquid p-n junction. According to the method, polar liquid is adopted as a liquid semiconductor, and an electrode P and an electrode N with different free electron densities are placed in the polar liquid and do not chemically react with the liquid. Dipole layers with high concentration and low concentration are respectively formed on the P / L interface and the N / L interface, so that the capacitance characteristics of the interfaces are adjusted, and a p-n junction capacitor is formed. Residual built-in electric field intensity delta EP / L and delta EN / L are formed through the difference between an interface built-in electric field and an external electric field generated by polarization, the residual built-in electric field intensity delta EP / L and the residual built-in electric field intensity delta EN / L are synthesized into a total residual built-in electric field Ebi, and then the polar liquid p-n junction with the barrier capacitance is constructed. Under the condition of uniform temperature, trace polar molecules or electrolyte molecules in the polar liquid absorb heat and are decomposed into positive ion-negative ion pairs, and the positive ion-negative ion pairs drift towards the electrode P and the electrode N respectively under the action of the p-n junction to form ion capacitance, so that the p-n junction capacitor has spontaneous power generation and power storage functions and shows a thermovolt effect.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, specifically a method for constructing a polar liquid pn junction and its thermal voltage effect. Background Technology

[0002] Semiconductors are materials whose conductivity at room temperature falls between that of conductors and insulators. Their conductivity can be tuned by doping with trace amounts of impurities or by changing the temperature. These materials have relatively low permittivity and a small bandgap. Currently, there is no publicly available technology that discloses the use of polar liquids as liquid semiconductors.

[0003] The existing fabrication processes for solid-state semiconductor pn junctions include the following: 1) Diffusion method: Utilizing the diffusion property of impurity atoms at high temperatures, impurities from P-type and N-type semiconductor materials are diffused into another semiconductor material, thereby forming a pn junction. 2) Ion implantation method: Using a high-energy ion beam, P-type or N-type impurity ions are implanted into the semiconductor material. By controlling the energy and dosage of the ion beam, the distribution of impurities is precisely controlled, thereby forming a pn junction. 3) Epitaxial growth method: A thin semiconductor film is grown on a semiconductor substrate using methods such as chemical vapor deposition. By controlling the growth conditions and doping process, the film has a conductivity type opposite to that of the substrate, thereby forming a pn junction. 4) Alloying method: A metal or alloy containing P-type and N-type impurities is heated and fused with a semiconductor material, allowing the impurities to diffuse into the semiconductor, forming a pn junction. 5) Photolithography combined with diffusion or ion implantation principles: Using photolithography, patterns of P-type and N-type regions are defined on the semiconductor material, and then impurities are introduced into the corresponding regions through diffusion or ion implantation, forming a pn junction. The aforementioned feature is that all the semiconductors used are solid-state semiconductors. The method for preparing the semiconductor pn junction involves doping with P-type and N-type impurities to control the conductivity of different regions, thereby forming a barrier capacitance and ultimately forming a solid-state semiconductor pn junction. Existing technology does not disclose a method for constructing polar liquid pn junctions of liquid semiconductors.

[0004] The photovoltaic effect of the aforementioned semiconductor pn junction: When the pn junction is illuminated, the semiconductor material absorbs the energy of photons. If the energy of the photon is higher than the band gap of the semiconductor material, it will cause an electron in the valence band to jump to the conduction band, leaving a hole. This process generates electron-hole pairs, that is, the semiconductor material generates photogenerated carriers under illumination. These carriers will separate under the influence of the potential barrier capacitance of the built-in electric field, thereby forming photocurrent and voltage. This effect has wide applications in optoelectronic devices such as solar cells, photodetectors, and photodiodes, mainly for converting light energy into electrical energy. However, the existing technology does not disclose the thermovoltaic effect of semiconductor pn junctions converting thermal energy into electrical energy at a uniform temperature. Summary of the Invention

[0005] To overcome the aforementioned deficiencies, this invention aims to provide a method for constructing a liquid semiconductor pn junction and its thermal voltage effect, thereby solving the problem of converting thermal energy into electrical energy under uniform temperature conditions. This objective is achieved through the following technical solution.

[0006] A method for constructing a polar liquid pn junction, the key point of which is to use a polar liquid as a liquid semiconductor, placing electrodes P and N with different free electron densities in a polar liquid L, where electrodes P and N do not chemically react with the polar liquid L; a high-concentration dipole layer is polarized at the P / L interface, and a low-concentration dipole layer is polarized at the N / L interface, thereby adjusting the capacitance characteristics of the different interfaces to form the pn junction capacitor; the method for constructing the polar liquid pn junction capacitor relies solely on the built-in electric field strength E at the P / L and N / L interfaces. P / L and E N / L Polarization generates an external electric field strength E' P / L and E' N / L Due to the relative permittivity ε r E is always greater than 1, making E P / L Greater than E' P / L E N / L Greater than E' N / L This results in the formation of residual built-in electric field strength ΔE at the P / L and N / L interfaces, respectively. P / L and ΔE N / L Remaining built-in electric field strength ΔE P / L and ΔE N / L In a polar liquid, a total residual built-in electric field strength E is synthesized. bi E bi =ΔE P / L -ΔE N / L This forms a barrier capacitance, thereby constructing the polar liquid pn junction.

[0007] The thermal voltage effect of this polar liquid pn junction is as follows: Under uniform temperature conditions, trace polar molecules or electrolyte molecules in the polar liquid absorb heat and decompose into positive-negative ion pairs. Under the influence of the barrier capacitance of the polar liquid pn junction, positive ions drift towards electrode P, and negative ions drift towards electrode N, thereby forming an ionic capacitance. This enables the pn junction capacitor to generate and store electricity spontaneously, exhibiting a thermal voltage effect with self-organization.

[0008] The thermal voltage effect of the pn junction capacitor in the open-circuit equilibrium state is as follows: the ionic capacitance approaches its maximum value, the recombination and decomposition process of positive and negative ions in the polar liquid reaches equilibrium, and the accumulation and release of the interfacial ion layer also reaches equilibrium. At this time, the pn junction capacitor has the maximum voltage in the open-circuit equilibrium state.

[0009] The thermal voltage effect of the pn junction capacitor under short-circuit equilibrium state is as follows: the ionic capacitance approaches the minimum value, the recombination and decomposition process of positive and negative ions in the polar liquid reaches equilibrium, and the accumulation and release of the interfacial ion layer also reaches equilibrium. At this time, the pn junction capacitor has the minimum voltage of the short-circuit equilibrium state.

[0010] The thermal voltage effect of the pn junction capacitor during the switching between open-circuit equilibrium and short-circuit equilibrium states is as follows: When switching from short-circuit equilibrium to open-circuit equilibrium, the positive and negative ions generated by the continuous decomposition of the polar liquid drift towards electrode P and electrode N respectively under the action of the barrier capacitance and accumulate charge, causing the voltage of the pn junction capacitor to continuously increase until it reaches the maximum voltage of the open-circuit equilibrium state; when switching from open-circuit equilibrium to short-circuit equilibrium, the pn junction capacitor begins to discharge, the ionic capacitance continuously decreases, and the voltage across its terminals continuously decreases until it reaches the minimum voltage of the short-circuit equilibrium state; during the switching between the short-circuit equilibrium state and the open-circuit equilibrium state of the pn junction capacitor, the changes in voltage and current are repeatedly reproduced.

[0011] Advantages of this invention:

[0012] 1. This invention selects a polar liquid as the liquid semiconductor. Polar liquids are easily polarized, and their conductivity can be adjusted by doping with trace amounts of electrolyte or by changing the temperature. In contrast, the conductivity of solid semiconductors can be adjusted by doping with trace amounts of impurities or by changing the temperature.

[0013] 2. This invention places electrodes P and N with different free electron densities in a polar liquid L. By utilizing the built-in electric fields at the P / L and N / L interfaces, the capacitance characteristics of these different interfaces are adjusted, thereby synthesizing a barrier capacitor and ultimately constructing a liquid polar pn junction. In contrast, the fabrication methods for semiconductor pn junctions all involve doping with P-type and N-type impurities to adjust the conductivity characteristics of different regions, thereby forming a barrier capacitor and ultimately a solid-state semiconductor pn junction.

[0014] 3. This invention utilizes the endothermic decomposition of trace polar molecules or electrolyte molecules in a polar liquid to generate positive-negative ion pairs as charge carriers. Under the influence of potential barrier capacitance, these charge carriers separate to form current and voltage, thus exhibiting the thermal photovoltaic effect of a polar liquid pn junction, thereby solving the problem of converting thermal energy into electrical energy under uniform temperature conditions. In contrast, semiconductor materials generate hole-electron pairs as charge carriers under illumination. Similarly, under the influence of potential barrier capacitance, these charge carriers separate to form current and voltage, thus exhibiting the photovoltaic effect of a semiconductor pn junction, thereby solving the problem of converting light energy into electrical energy under illumination conditions. Attached Figure Description

[0015] Figure 1This is a schematic diagram of the electric field strength of the pn junction capacitor of the present invention.

[0016] Figure 2 This is a schematic diagram of the pn junction capacitor potential of the present invention.

[0017] Figure 3 This is a schematic diagram of the pn junction capacitor structure of the present invention.

[0018] Figure 4 This is a schematic diagram of an embodiment of the pn junction capacitor (Pt|H2O|Au) of the present invention.

[0019] Figure 5 yes Figure 4 Figure 1 shows the voltage variation over time of an open-circuit pn junction capacitor (Pt|H2O|Au).

[0020] Figure 6 yes Figure 4 An example diagram showing the change in current over time of a short-circuited pn junction capacitor (Pt|H2O|Au). Implementation

[0021] The present invention will now be further described with reference to the accompanying drawings.

[0022] The method for constructing this polar liquid pn junction is as follows: Figure 1 As shown, in a pn junction capacitor, electrodes P and N with different free electron densities are placed in a polar liquid L. The P / L interface and the N / L interface each form a polarized contact, with built-in electric field strengths E and E, respectively. P / L and E N / L The charges do not diffuse into each other; the electric double layer consists of a dipole layer on one side of the polar liquid L, and the built-in electric field strengths are E'. P / L and E' N / L Assume that the relative permittivity of both dipole layers is ε. rj The capacitance C formed by the two dipole layers j Then there is a residual built-in electric field strength ΔE P / L and ΔE N / L .

[0023]

[0024]

[0025] The P / L interface and the N / L interface combine to form a total residual built-in electric field intensity E. bi (T).

[0026]

[0027] like Figure 2As shown: Assume the dipole layer thickness at both the P / L and N / L interfaces is δ. j And the distance between the two electrodes is d. Then the remaining built-in electric field strength E bi (T) The barrier capacitance C formed bi This generates a residual built-in potential difference U. bi (T).

[0028]

[0029] In the formula, κ is the Boltzmann constant, e is the electron charge, T is the thermodynamic temperature, and σ is the electron charge. P and σ N These represent the free electron densities of electrodes P and N, respectively.

[0030] The above indicates that both the P / L and N / L interfaces are polarized contacts, due to the relative permittivity ε rj A residual built-in electric field strength E is always greater than 1 in a polar liquid. bi (T), and its barrier capacitance C bi and the remaining built-in potential difference U bi (T) marks the formation of a polar liquid pn junction.

[0031] like Figure 3 As shown, the thermal voltage effect of the polar liquid pn junction is as follows: Under normal conditions, a trace amount of polar molecules or electrolyte molecules in the polar liquid absorb heat and dissociate into positive ion-negative ion pairs, such as the trace amount of H2O contained in H2O. ＋ and 0H － Positive and negative ions drift towards the surfaces of electrodes P and N under the influence of the polar liquid pn junction, forming an ionic capacitance C. i Its polarity is related to the barrier capacitance C. bi Conversely, its voltage is the built-in potential difference, which is the voltage U(T) of the pn junction capacitor. During the transition from short-circuit equilibrium to open-circuit equilibrium, as charge accumulates, the voltage U(T) gradually increases until it reaches the voltage U(T) of the open-circuit equilibrium state. max Assume the ion layer thickness at both interfaces is δ. i The relative permittivity is ε. ri .

[0032]

[0033] The above shows that pn junction capacitors under normal conditions exhibit the phenomenon of spontaneous power generation and energy storage, demonstrating the thermovolt-ampere effect of converting thermal energy into electrical energy at a uniform temperature.

[0034] During the transition from open-circuit equilibrium to short-circuit equilibrium, the pn junction capacitor discharges, and the ionic capacitance C... iAs the capacitance C continues to decrease, its voltage U(T) continues to decrease, and the ionic capacitance C... i It tends to be the minimum, relative permittivity ε ri It tends to the minimum, i.e., ε ri →1. The recombination and decomposition of positive and negative ions reach an equilibrium state, and the ion layer thickness δ i It tends towards the maximum, i.e., δ i →d, the accumulation and release of the ion layer reach equilibrium. At this point, the electromotive force of the pn junction capacitor circuit is the minimum voltage U of the ion capacitor. min (T).

[0035]

[0036] The above shows that a pn junction in a short-circuit equilibrium state has a minimum voltage U. min (T) demonstrates the thermovolt effect, which converts thermal energy into electrical energy at a uniform temperature.

[0037] like Figure 4 As shown, a pn junction capacitor (Pt|H2O|Au) is used as an example, with electrodes P and N having a thickness of 0.1 mm and an area of ​​30 × 30 mm, respectively. 2 Platinum (Pt) and gold (Au) sheets with a purity exceeding 99.99% were used. The leads for the Pt and Au sheets were Pt wires and Au wires, respectively, which passed through rubber stoppers for sealing and insulation to form electrodes. The Pt and Au sheets were isolated and fixed by 5mm thick polytetrafluoroethylene gaskets and their fine filaments, and immersed in high-purity water (H2O). Since Pt and Au do not chemically react with H2O and have no oxide film on their surfaces, and ultra-high purity Pt, Au, and H2O are readily available, the pn junction capacitor (Pt|H2O|Au) is suitable for experimental research in this example. The pn junction capacitor was placed in a metal box and then placed in a constant temperature chamber for measurement, effectively eliminating the influence of electrochemical reactions, thermoelectric effects, photoelectric effects, electromagnetic effects, and electrokinetic effects.

[0038] like Figure 5 As shown, under a uniform temperature of 20℃, the pn junction capacitor (Pt|H2O|Au) was measured. The experimental results show that the pn junction capacitor exhibits spontaneous power generation and energy storage during the transition from a short-circuit equilibrium state to an open-circuit equilibrium state. The voltage U gradually increases with time, eventually reaching a stable maximum value in the open-circuit equilibrium state. max It is 0.158V.

[0039] like Figure 6As shown: During the transition of a pn junction capacitor (Pt|H2O|Au) from an open-circuit equilibrium state to a short-circuit equilibrium state, experimental results show that the pn junction capacitor discharges, and the current I decreases rapidly over time, eventually stabilizing at a sustained minimum value in the short-circuit equilibrium state. This minimum value I... min 1.88×10 -9 (A)

[0040] The above are as follows Figure 5 As shown and as Figure 6 The process of switching between the short-circuit equilibrium state and the open-circuit equilibrium state of the pn junction capacitor shown is repeatedly reproduced, and the changes in the voltage and current values ​​are reproduced repeatedly.

[0041] In summary, this invention places electrodes P and N with different free electron densities in a polar liquid L. By adjusting the capacitance characteristics of these two interfaces through the built-in electric fields at the P / L and N / L interfaces, a total residual built-in electric field is synthesized in the polar liquid, forming a barrier capacitor, thereby constructing a polar liquid pn junction. This opens up a new research direction in the semiconductor field. In the polar liquid, trace amounts of positive and negative ions or electrolyte molecules form ionic capacitors under the influence of the built-in electric field of the polar liquid pn junction, endowing the pn junction capacitor with the functions of spontaneous power generation and energy storage, exhibiting a thermal voltage effect, and showing broad application prospects.

[0042] The above description is intended to illustrate the technical means of the present invention and is not intended to limit the scope of the invention. Any obvious improvements or substitutions made to the present invention by those skilled in the art based on existing common knowledge also fall within the protection scope of the claims of the present invention.

Claims

1. A method of constructing a p-n junction of polar liquid, characterized by: The polar liquid is used as a liquid semiconductor, and electrodes P and N with different free electron densities are placed in the polar liquid L, and the electrodes P and N do not react with the polar liquid L; A high-concentration dipole layer is polarized at the P / L interface, and a low-concentration dipole layer is polarized at the N / L interface, so as to adjust the capacitance characteristics of different interfaces and form the p-n junction capacitor; The method for constructing the polar liquid pn junction in this pn junction capacitor is as follows: relying solely on the built-in electric field strength E at the P / L and N / L interfaces. P / L and E N / L Polarization generates an external electric field strength E' P / L and E' N / L Due to the relative permittivity ε r E is always greater than 1, making E P / L Greater than E' P / L E N / L Greater than E' N / L This results in the formation of residual built-in electric field strength ΔE at the P / L and N / L interfaces, respectively. P / L and ΔE N / L The remaining built-in electric field strength ΔE P / L and ΔE N / L In a polar liquid, a total residual built-in electric field strength E is synthesized. bi E bi =ΔE P / L -ΔE N / L This forms a barrier capacitance, thereby constructing the polar liquid pn junction.

2. A thermovoltage effect of a polar liquid p-n junction according to claim 1, characterized in that: Under the condition of uniform temperature, trace polar molecules or electrolyte molecules in the polar liquid L are endothermically decomposed into positive and negative ion pairs, and under the action of the p-n junction of the polar liquid, the positive ions drift to the electrode P and the negative ions drift to the electrode N, so as to form an ionic capacitor, further endowing the p-n junction capacitor with the functions of spontaneous power generation and power storage, and exhibiting the thermal voltage effect of self-organization.

3. The thermovoltage effect of a polar liquid p-n junction according to claim 2, characterized in that: When the polar liquid p-n junction is in an open-circuit equilibrium state, the ionic capacitor tends to be at a maximum value, the recombination and decomposition processes of positive and negative ions in the polar liquid reach equilibrium, and the accumulation and release of the ion layer at the interface also reach the equilibrium state, and at this time, the p-n junction capacitor has a maximum voltage value in the open-circuit equilibrium state.

4. The thermovoltage effect of a polar liquid p-n junction according to claim 2, characterized in that: When the polar liquid p-n junction is in a short-circuit equilibrium state, the ionic capacitor tends to be at a minimum value, the recombination and decomposition processes of positive and negative ions in the polar liquid reach equilibrium, and the accumulation and release of the ion layer at the interface also reach the equilibrium state, and at this time, the p-n junction capacitor has a minimum voltage value in the short-circuit equilibrium state.

5. The thermovoltage effect of a polar liquid p-n junction according to claim 2, characterized in that: During the mutual switching process of the short-circuit equilibrium state and the open-circuit equilibrium state of the polar liquid p-n junction, when the short-circuit equilibrium state is switched to the open-circuit equilibrium process, the positive and negative ions continuously generated by the decomposition of the polar liquid drift to the electrodes P and N under the action of the polar liquid p-n junction and accumulate charges, resulting in a continuous increase in the voltage of the p-n junction capacitor until the maximum voltage value in the open-circuit equilibrium state is reached; when the open-circuit equilibrium state is switched to the short-circuit equilibrium process, the p-n junction capacitor begins to discharge, the ionic capacitor continuously decreases, and the voltage across the capacitor continuously decreases until the minimum voltage value in the short-circuit equilibrium state is reached; during the mutual switching process of the short-circuit equilibrium state and the open-circuit equilibrium state of the p-n junction capacitor, the voltage and current values change repeatedly.

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