Glass substrate edge chamfering processing method
By combining laser dynamic focusing with chemical etching, the problems of precision and efficiency in the chamfering process of ultra-thin glass substrates have been solved, achieving high-precision, low-damage chamfering, which is suitable for the processing of high-density storage disk substrates.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-19
- Publication Date
- 2026-03-13
AI Technical Summary
In the existing technology, the chamfering process of ultrathin glass substrates has problems such as limited precision, low efficiency, difficulty in meeting the needs of high-density storage, and traditional methods are prone to causing edge micro-cracks and large heat-affected zones, making the process difficult.
An internal modified layer is formed using a laser dynamic focusing device, and combined with a chemical etching solution, a penetration channel is formed inside the glass substrate by scanning with a laser beam. The chamfer shape is precisely preset, and the chemical etching solution is processed through the penetration channel to achieve rapid separation of waste areas and chamfer shaping.
It improves the precision and efficiency of chamfering, ensures the preservation of product thickness and strength, overcomes the technical bottlenecks of traditional methods, and is particularly suitable for the precision processing of ultra-thin glass.
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Figure CN121651701A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of disk substrate processing technology, and in particular to a method for chamfering the edges of a glass substrate. Background Technology
[0002] Ultra-thin glass (UTG), as a potential material for high-density storage disk substrates, is driving structural and process innovations in the fields of magnetic recording and solid-state storage. On the one hand, with the development of next-generation magnetic recording technologies such as heat-assisted magnetic recording (HAMR) and microwave-assisted magnetic recording (MAMR), extreme requirements are placed on the flatness, thickness uniformity, and thermal management of disk substrates. On the other hand, in the field of solid-state storage, UTG, as an advanced packaging substrate for 3D stacked flash memory, also needs to meet extremely high surface flatness and thermal stability. Currently, UTG is favored for its advantages such as high strength, low warpage, and excellent surface flatness. Its thinness helps reduce overall weight, improve stacking flexibility, and improve coating deposition uniformity and interface adhesion. However, the brittleness, thermal stress sensitivity, and yield challenges in large-size processing of UTG are also gradually emerging. Its high-precision circumferential cutting and edge modification processes have become important processes affecting mass production reliability and cost-effectiveness under the requirements of high-density storage.
[0003] In the current field of disk substrate processing, common methods include mechanical grinding, laser cutting, chemical etching, and integrated line processes such as ultrasonic segmentation based on the aforementioned steps. Mechanical grinding is mature and cost-effective, suitable for edge shaping and rounding of small-sized or medium-thickness substrates. However, on ultra-thin glass such as UTG, it is prone to problems such as heat input-induced edge microcracks, high edge roughness, and difficulty in maintaining stable alignment tolerances on large-sized substrates. Laser cutting offers advantages such as non-contact operation, controllable heat input, and strong adaptability to complex geometries, but it faces challenges such as heat-affected zones, edge microcrack initiation, thickness inhomogeneity, and increased processing difficulty for the brittle UTG. Chemical etching uses chemical etching solutions to corrode the edges of UTG glass to achieve chamfering. This method is often combined with other methods to optimize chamfering effects and processing efficiency. This method is relatively gentle and causes less damage to the glass edges, but the controllability of the etching rate, edge symmetry, and chemical safety and environmental compliance requirements are key bottlenecks. To overcome the limitations of a single method and improve the processing quality and efficiency of UTG glass chamfering, a combined processing method is usually adopted. For example, mechanical cutting or laser cutting is used for pretreatment, and then chemical etching is used for final processing. However, the current combined processing method still has the problems of limited processing accuracy, difficulty in achieving ideal size and shape accuracy of UTG chamfering, relatively low overall processing efficiency, and difficulty in guaranteeing product thickness. Summary of the Invention
[0004] The purpose of this invention is to provide a method for chamfering the edges of a glass substrate, which can solve the above-mentioned problems existing in the prior art.
[0005] To achieve the above objectives, this application adopts the following technical solution: As one aspect of the present invention, a method for chamfering the edge of a glass substrate is provided, comprising the steps of: S1, using a laser dynamic focusing device, at least one laser beam is focused on the interior of the glass substrate to be processed, and controlled to scan along at least one first planned trajectory to form at least one first internal modification layer; wherein, the shape of the first internal modification layer corresponds to the chamfer of the edge of the glass substrate. S2, using a laser dynamic focusing device, at least one laser beam is focused on the interior of the glass substrate and controlled to scan along at least one second planned trajectory to form at least one second internal modification layer; wherein, the second internal modification layer is adjacent to the first internal modification layer and is located in the waste area; at least a portion of the second internal modification layer forms a permeation channel penetrating both sides of the axial direction of the glass substrate. S3, the glass substrate after the formation of the first internal modification layer and the second internal modification layer is placed in a chemical etching solution. The chemical etching solution enters the interior of the glass substrate through a penetration channel and etches the second internal modification layer, the glass between the first internal modification layer and the second internal modification layer, as well as the first internal modification layer. After etching, the waste area separates and falls off from the glass substrate along the second internal modification layer, and an edge chamfer is formed on the glass substrate.
[0006] Preferably, along the thickness direction of the glass substrate, the second internal modified layer is tangent to the middle position of the first internal modified layer.
[0007] Preferably, the laser beam used in step S2 is used to perform point processing on the upper and lower surfaces of the glass substrate at positions corresponding to the first internal modified layer, so as to form a plurality of recesses on the glass substrate that communicate with the first internal modified layer.
[0008] Preferably, step S2 further includes: focusing the laser beam used in step S2 onto the interior of the waste area and controlling it to scan along a third planned trajectory to form at least one third internal modification layer, and dividing the waste area into multiple independent waste segment areas through the third internal modification layer.
[0009] Preferably, the third internal modification layer is connected to the second internal modification layer and is radially and uniformly distributed on the waste area.
[0010] Preferably, in step S3, ultrasonic waves are applied to the chemical etching solution to perform dicing.
[0011] Preferably, the laser beam used in step S2 is a Bessel beam.
[0012] Preferably, the chamfered edge of the glass substrate is C-shaped or trapezoidal.
[0013] Preferably, the process of chamfering the edge of the storage disk substrate based on the glass substrate to be processed includes the following steps: In step S1, the first laser beam is focused on the interior of the glass substrate to be processed using a laser dynamic focusing device, and it is controlled to scan along the first planned trajectory to form a first internal modified layer corresponding to the shape of the chamfer on the outer edge of the glass substrate. Step S1 is executed again, and the second laser beam is focused on the interior of the glass substrate to be processed using the laser dynamic focusing device, and it is controlled to scan along the second first planned trajectory to form a first internal modified layer corresponding to the shape of the inner edge chamfer of the glass substrate. Repeat step S2, using the laser dynamic focusing device (500) to focus the third laser beam onto the interior of the glass substrate (100) to be processed, and control it to scan along two different second planning trajectories (300) to form two second internal modified layers. One outer second internal modified layer is adjacent to the outer side of the first internal modified layer corresponding to the shape of the outer edge chamfer, and the other inner second internal modified layer is adjacent to the inner side of the first internal modified layer corresponding to the shape of the inner edge chamfer. In step S3, after etching with chemical etching solution, the waste area outside the second internal modified layer on the outer side falls off along the second internal modified layer on the outer side, and the waste area inside the second internal modified layer on the inner side falls off along the second internal modified layer on the inner side, thus obtaining the outer contour of the storage disk substrate and forming outer edge chamfers and inner edge chamfers on the storage disk substrate.
[0014] Preferably, the laser dynamic focusing device is sequentially configured to include: a laser, a half-wave plate, a polarizing beam splitter, a beam expander, a spatial light modulator, a reflector, a lens group, and a focusing objective lens; The laser dynamic focusing device further includes a control system and a focus adjustment module. The control system is connected to the laser, the spatial light modulator, and the stage for supporting the glass substrate, and is used to control the operation of the laser, the spatial light modulator, and the movement of the stage. The focus adjustment module is fixed on the focusing objective lens, which is used to measure the real-time distance between itself and the surface of the glass substrate and transmit it to the control system. The control system adjusts the distance between the focusing objective lens and the surface of the glass substrate according to the real-time distance, so that the laser beam is focused at the same depth inside the glass substrate during the processing.
[0015] The beneficial effects of this application are as follows: In this application, different first internal modification layers are formed by dynamically modulated laser beams, and the geometric shape of the chamfer is precisely preset to ensure the accuracy of the forming. Then, the second internal modification layer and its through-channel formed by the Bessel laser beam provide the optimal penetration path and separation guide surface for subsequent chemical etching. This not only allows the etching solution to act quickly and uniformly, greatly improving the efficiency and controllability of waste separation, but also effectively limits excessive corrosion and preserves the thickness and strength of the product body to the greatest extent.
[0016] This application achieves simultaneous cleaning and separation of the waste area and precision shaping of the edge chamfer in a single chemical etching step, fundamentally overcoming the technical bottlenecks of traditional mechanical grinding, which easily leads to edge chipping and cracking, as well as the large heat-affected zone and difficulty in shaping complex chamfers in single laser processing. It is especially suitable for precision processing of brittle and heat-sensitive materials such as ultra-thin glass. Attached Figure Description
[0017] The present application will now be described in further detail with reference to the accompanying drawings and embodiments.
[0018] Figure 1 A block diagram illustrating the glass substrate edge chamfering processing method provided in an embodiment of this application; Figure 2 This is a schematic diagram of the laser dynamic focusing device provided in the embodiments of this application; Figure 3 This is a schematic diagram of the structure of the first internal modified layer prepared on the glass substrate in an embodiment of this application. Figure 4 for Figure 3 Schematic diagram of the structure of section AA in the middle; Figure 5 This is a schematic diagram of the structure of the second internal modified layer prepared on the glass substrate in an embodiment of this application; Figure 6 for Figure 5 Schematic diagram of the structure of the middle BB section; Figure 7 This is a schematic diagram of the structure of the third internal modified layer prepared on the glass substrate in an embodiment of this application.
[0019] In the picture: 100. Glass substrate; 101. First internal modification layer; 102. Second internal modification layer; 103. Waste area; 200, First planning trajectory; 300, Second planning trajectory; 400, Third planning trajectory; 500. Laser dynamic focusing device; 501. Laser; 502. Half-wave plate; 503. Polarizing beam splitter; 504. Beam expander; 505. Spatial light modulator; 506. Mirror; 507. First lens; 508. Second lens; 509. Focusing objective lens; 510. Focus adjustment module; 511. Stage; 512. CCD camera; 513. Broadband mirror. Detailed Implementation
[0020] To make the technical problems solved by this application, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of this application are further described in detail below. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0021] In the description of this application, unless otherwise expressly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0022] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0023] Figure 1 A block diagram illustrating the glass substrate edge chamfering processing method provided in an embodiment of this application; Figure 2 This is a schematic diagram of the laser dynamic focusing device provided in the embodiments of this application; Figure 3 This is a schematic diagram of the structure of the first internal modified layer prepared on the glass substrate in an embodiment of this application. Figure 4 for Figure 3 Schematic diagram of the structure of section AA in the middle; Figure 5 This is a schematic diagram of the structure of the second internal modified layer prepared on the glass substrate in an embodiment of this application; Figure 6 for Figure 5 Schematic diagram of the structure of the middle BB section; Figure 7 This is a schematic diagram of the structure of the third internal modified layer prepared on the glass substrate in an embodiment of this application.
[0024] like Figure 1As shown, this embodiment provides a method for chamfering the edge of a glass substrate, including the following steps: S1, using a laser dynamic focusing device 500, focusing at least one laser beam onto the interior of the glass substrate 100 to be processed, and controlling it to scan along at least one first planned trajectory 200 to form at least one first internal modification layer 101; wherein, the first internal modification layer 101 corresponds to the shape of the chamfer on the edge of the glass substrate 100; S2, using the laser dynamic focusing device 500, focusing at least one laser beam onto the interior of the glass substrate 100, and controlling it to scan along at least one second planned trajectory 300 to form at least one second internal modification layer 102; wherein, the second internal modification layer 102 is adjacent to the first internal modification layer 101, and Located in waste area 103; at least a portion of the second internal modified layer 102 forms a permeation channel penetrating both axial sides of the glass substrate 100; S3, the glass substrate 100 after the formation of the first internal modified layer 101 and the second internal modified layer 102 is placed in a chemical etching solution, the chemical etching solution enters the interior of the glass substrate 100 through the permeation channel, and etches the second internal modified layer 102, the first internal modified layer 101 and the glass substrate 100 between the second internal modified layer 102 and the first internal modified layer 101; after etching, the waste area 103 separates and falls off from the glass substrate 100 along the second internal modified layer 102, and an edge chamfer is formed on the glass substrate 100.
[0025] In this embodiment, different first internal modification layers 101 are formed by dynamically modulated laser beams, and the geometric shape of the chamfer is precisely preset to ensure the accuracy of the forming. Then, the second internal modification layer 102 formed by the Bessel laser beam and its through-channel provide the optimal penetration path and separation guide surface for subsequent chemical etching. This not only allows the etching solution to act quickly and uniformly, greatly improving the efficiency and controllability of waste separation, but also effectively limits excessive corrosion and preserves the thickness and strength of the product body to the greatest extent.
[0026] In one embodiment, along the thickness direction of the glass substrate 100, the second internal modified layer 102 is tangent to the middle position of the first internal modified layer 101. Alternatively, the second internal modified layer 102 is tangent to the top of the first internal modified layer 101 (i.e., the chamfered edge). This arrangement effectively shortens the etching distance and greatly improves the efficiency of waste separation.
[0027] Furthermore, the permeation channels on the second internal modified layer 102 are perpendicular to the upper and lower surfaces of the glass substrate 100.
[0028] In one embodiment, along the thickness direction of the glass substrate 100, at positions on the upper and lower surfaces of the glass substrate 100 corresponding to the first internal modified layer 101, the laser beam used in step S2 is used for targeted processing to form multiple recesses on the glass substrate 100 that communicate with the first internal modified layer. That is, penetration channels are also formed at these recesses, allowing the etching solution to smoothly penetrate into the interior of the glass substrate 100 and quickly reach the areas requiring etching during the etching process. This ensures the stability and uniformity of the etching process while significantly improving the efficiency of waste separation.
[0029] In one embodiment, step S2 further includes: focusing the laser beam used in step S2 onto the interior of the waste area and controlling it to scan along a third planned trajectory 400 to form at least one third internal modification layer, thereby dividing the waste area into multiple independent waste fragmentation areas through the third internal modification layer. In this embodiment, the third internal modification layer in the waste area divides the waste area into multiple independent waste fragmentation areas, improving the efficiency of fragment separation in the waste area.
[0030] It is understood that at least a portion of the third internal modification layer will also form permeation channels penetrating both axial sides of the glass substrate 100. Generally, it is necessary to minimize the spacing between adjacent permeation channels; optionally, adjacent permeation channels may partially overlap or be adjacent to each other. Correspondingly, the permeation channels located on the second internal modification layer 102 also need to adopt a similar arrangement.
[0031] In one embodiment, the third internal modification layer is connected to the second internal modification layer 102 and is radially and uniformly distributed on the waste area 103. In this embodiment, the connection of the third internal modification layer to the second internal modification layer 102 allows the waste area to precisely detach along the second internal modification layer. The radial distribution of the third internal modification layer on the waste area 103 increases the distribution range of the permeation channels of the third internal modification layer on the waste area 103, which is beneficial to further improve the efficiency of waste separation.
[0032] In one embodiment, in step S3, ultrasonic waves are applied to the chemical etching solution to perform chipping, which can improve the efficiency of waste separation.
[0033] In one embodiment, the laser beam used in step S2 is a Bessel beam. In this embodiment, a high-energy laser beam is used to form micro-penetration channels within the glass substrate 100, guiding the etching solution to act quickly and uniformly, greatly improving the efficiency and controllability of waste separation.
[0034] In one embodiment, the shape of the chamfered edge of the glass substrate 100 may include a C-shape or a trapezoidal shape. The shape of the chamfered edge is not specifically limited here and can be selected according to the actual product needs.
[0035] like Figure 2 As shown, the laser dynamic focusing device 500 provided in this embodiment will be introduced first. The laser dynamic focusing device 500 includes, in sequence and optically connected, a laser 501, a half-wave plate 502, a polarizing beam splitter 503, a beam expander 504, a spatial light modulator 505, a reflector 506, a lens group, and a focusing objective lens 509.
[0036] Laser 501 is mainly used to emit a laser beam for processing products. This laser beam is linearly polarized light with a wavelength between 1000nm and 1100nm. Half-wave plate 502 is mainly used to adjust the polarization state of the laser beam. Polarizing beam splitter 503 is mainly used in conjunction with half-wave plate 502 to adjust the energy of the processing laser beam. Beam expander 504 is mainly used to collimate and expand the laser beam. Spatial light modulator 505 is mainly used to modulate the wavefront amplitude and phase of the incident beam through the optical polarization and birefringence of liquid crystal molecules. It can be used as a dynamic optical element to modulate the spatial distribution of light intensity and phase in real time. Different laser beam shaping effects can be achieved by loading different phase diagrams. Reflector 506 is mainly used to change the transmission direction of the laser beam. The lens assembly mainly includes a first lens 507 and a second lens 508, used to adjust the size of the laser beam to match the numerical aperture of the focusing objective 509. The distance from the spatial light modulator 505 to the first lens 507 is equal to the focal length of the first lens 507; the distance between the first lens 507 and the second lens 508 is equal to the sum of their focal lengths; and the distance from the second lens 508 to the focusing objective 509 is equal to the focal length of the second lens 508. The focusing objective 509 is mainly used to focus the laser beam. It is connected to a focus adjustment module 510, which measures in real time the distance to the surface of the glass substrate 100 to be processed, placed on the stage 511. When the deviation of this distance from a preset distance value exceeds a certain range, the height of the focusing objective 509 is adjusted to bring the distance within the preset deviation range. This ensures that even with an uneven substrate surface, the laser beam can still be processed at the required position, resulting in good processing results.
[0037] In some embodiments, the laser dynamic focusing device 500 further includes a control system and a focus adjustment module 510; the control system is connected to the control end of the laser 501, the spatial light modulator 505, and the stage 511 for supporting the glass substrate 100, and is used to control the operation of the laser 501, the spatial light modulator 505, and the movement of the stage 511; the focus adjustment module 510 is fixed on the focusing objective lens 509, and is used to measure the real-time distance between it and the surface of the glass substrate 100 and transmit it to the control system; the control system adjusts the distance between the focusing objective lens 509 and the surface of the glass substrate 100 according to the real-time distance, so that the laser beam is focused at the same depth inside the glass substrate 100 during the processing.
[0038] In some embodiments, the laser dynamic focusing device 500 further includes a broadband reflector 513 and a CCD camera 512. The broadband reflector 513 is mainly used to change the transmission direction of the laser beam and also to allow the detection light to pass through, facilitating observation of the processing. The CCD camera 512 is mainly used for positioning before processing and for observing the processing effect during processing.
[0039] In one embodiment, the glass substrate 100 to be processed is rectangular in shape, and the storage disk substrate after processing using the glass substrate 100 edge chamfering method is annular in shape. The specific steps of the storage disk substrate edge chamfering method include: refer to Figure 3 and Figure 4 As shown, step S1 includes: In step S11, a first phase map of the first laser beam corresponding to the chamfered outer circle is loaded onto the spatial light modulator 505. The laser beam emitted from the laser 501 is modulated by the spatial light modulator 505 to form the first laser beam corresponding to the chamfered outer circle. After being reflected by the spatial light modulator 505, it is focused onto the interior of the glass substrate 100 to be processed by the first lens 507, the second lens 508, several mirrors 506, and the focusing objective lens 509, and controlled to scan along the first planned trajectory 200 corresponding to the chamfered outer circle to form the first internal modified layer 101 corresponding to the chamfered outer circle. That is, the first internal modified layer 101 corresponding to the chamfered outer circle corresponds to the shape of the chamfered outer circle edge of the storage disk substrate. It should be noted that the chamfer shape can be, but is not limited to, C-shaped or trapezoidal.
[0040] In step S12, a second phase map of the second laser beam corresponding to the inner chamfer is loaded onto the spatial light modulator 505. The laser beam emitted from the laser 501 is modulated by the spatial light modulator 505 to form the second laser beam corresponding to the inner chamfer. After being reflected by the spatial light modulator 505, it is focused onto the interior of the glass substrate 100 to be processed by the first lens 507, the second lens 508, several mirrors 506, and the focusing objective lens 509, and controlled to scan along the first planned trajectory 200 corresponding to the inner chamfer, forming the first internal modified layer 101 corresponding to the inner chamfer. That is, the first internal modified layer 101 corresponding to the inner chamfer corresponds to the shape of the inner chamfer of the storage disk substrate. It should be noted that the chamfer shape can be, but is not limited to, C-shaped or trapezoidal.
[0041] The order of steps S11 and S12 can be interchanged without any specific restrictions.
[0042] refer to Figure 5 and Figure 6 As shown, step S2 includes: In step S21, a third phase diagram of the third laser beam is applied to the spatial light modulator 505 to the side of the first internal modified layer 101 adjacent to the outer chamfer and near the waste area 103. The laser beam emitted from the laser 501 is modulated by the spatial light modulator 505 to form a third laser beam. After being reflected by the spatial light modulator 505, it is focused by the first lens 507, the second lens 508, several mirrors 506, and the focusing objective lens 509 onto the interior of the glass substrate 100, forming the second internal modified layer 102 corresponding to the outer chamfer. Here, the second internal modified layer 102 corresponding to the outer chamfer is generally as close as possible to the side of the first internal modified layer 101 adjacent to the waste area 103. In other words, the second internal modified layer 102 corresponding to the outer chamfer is generally as close as possible to the outer side of the first internal modified layer 101 corresponding to the outer chamfer. At least a portion of the second internal modification layer 102, corresponding to the outer chamfer, forms a permeation channel penetrating the upper and lower sides of the glass substrate 100. Generally, it is necessary to minimize the spacing between adjacent permeation channels. Optionally, adjacent permeation channels may partially overlap or be adjacent to each other. Correspondingly, the permeation channels located on the second internal modification layer 102 also need to adopt a similar arrangement.
[0043] In step S22, a fourth phase diagram of the fourth laser beam is applied to the spatial light modulator 505 to the side of the first internal modified layer 101 corresponding to the inner chamfer that is near the waste area 103. The laser beam emitted from the laser 501 is modulated by the spatial light modulator 505 to form the fourth laser beam. After being reflected by the spatial light modulator 505, it is focused by the first lens 507, the second lens 508, several mirrors 506, and the focusing objective lens 509 onto the interior of the glass substrate 100, forming the second internal modified layer 102 corresponding to the inner chamfer. Here, the second internal modified layer 102 corresponding to the inner chamfer is generally as close as possible to the side of the first internal modified layer 101 corresponding to the inner chamfer that is near the waste area 103. In other words, the second internal modified layer 102 corresponding to the inner chamfer is generally as close as possible to the inner side of the first internal modified layer 101 corresponding to the inner chamfer. At least a portion of the second internal modification layer 102, corresponding to the inner chamfer, forms a permeation channel penetrating the upper and lower sides of the glass substrate 100. Generally, it is necessary to minimize the spacing between adjacent permeation channels. Optionally, adjacent permeation channels may partially overlap or be adjacent to each other. Correspondingly, the permeation channels located on the second internal modification layer 102 also need to adopt a similar arrangement.
[0044] The order of steps S21 and S22 can be interchanged without any specific restrictions.
[0045] In one embodiment, the second internal modified layer 102 corresponding to the outer chamfer can be tangent to the first internal modified layer 101 corresponding to the outer chamfer. The second internal modified layer 102 corresponding to the inner chamfer can also be tangent to the first internal modified layer 101 corresponding to the inner chamfer. As shown in the figure, the second internal modified layer 102 corresponding to the outer chamfer cuts the side of the first internal modified layer 101 corresponding to the outer chamfer away from the center. The second internal modified layer 102 corresponding to the inner chamfer cuts the side of the first internal modified layer 101 corresponding to the inner chamfer closer to the center.
[0046] As shown in the figure, the shapes of the first internal modified layer 101 corresponding to the outer chamfer and the first internal modified layer 101 corresponding to the inner chamfer are both circular. The permeation channels on the second internal modified layer 102 corresponding to the outer chamfer and the second internal modified layer 102 corresponding to the inner chamfer are arranged vertically along the thickness direction of the glass substrate 100. This arrangement can further shorten the etching distance and greatly improve the efficiency of waste separation.
[0047] In one embodiment, at the positions corresponding to the penetration channels on both axial sides of the glass substrate 100, the laser beam used in step S2 is used for point processing to form open surface openings on both axial sides of the glass substrate 100, thereby ensuring that the upper and lower surfaces of the glass substrate 100 are cut through so that the chemical etching solution can smoothly penetrate into the interior of the glass substrate 100.
[0048] In one embodiment, reference Figure 7 As shown, step S2 further includes: focusing the laser beam used in step S2 onto the interior of the glass substrate 100 and controlling it to scan along the third planned trajectory 400 to form multiple third internal modification layers; the multiple third internal modification layers are respectively connected to the second internal modification layer 102 and are radially distributed on the waste area 103. In this embodiment, the third internal modification layers not only increase the penetration channels for the chemical etching solution into the interior of the glass substrate 100, but also form stress dispersion in the waste area 103 to facilitate chipping, thus improving the overall efficiency of waste separation.
[0049] In one embodiment, in step S4, ultrasonic waves are applied to the chemical etching solution to perform cleaving. It is important to note that the liquid composition, concentration, etching time, and ultrasonic processing parameters of the chemical etching solution are related to the composition and thickness of the actual glass substrate 100 being processed. The chemical etching solution enters the glass substrate 100 through the penetration channels of the second internal modification layer 102, widening the gaps in the waste area 103 on the glass substrate 100. Combined with the effect of ultrasonic waves, this facilitates the shedding of the waste area 103, forming the desired product shape, which in this case is a ring-shaped structure.
[0050] In this embodiment, the laser beam used in step S2 can be a Bessel beam.
[0051] There are no specific limitations on the shape of the glass substrate 100. The glass substrate 100 may be one or more of the following shapes: circular, annular, and elliptical.
[0052] In one embodiment, the glass substrate 100 is made of ultra-thin glass. To ensure the smooth progress of subsequent processes, the etching process needs to minimize the removal of the glass substrate 100's thickness. However, it also needs to ensure that the chemical etching solution can fully penetrate the penetration channels of the second internal modified layer 102, seeping into the material along these channels to etch and form a chamfer. In this solution, to facilitate the penetration of the etching solution and remove the waste area 103, a penetration channel is added next to the first internal modified layer 101 corresponding to the chamfer trajectory, running through the glass substrate 100. The etching solution enters the glass substrate 100 along the shortest straight path, reducing the etching time and preserving more thickness.
[0053] During etching, the etching solution preferentially penetrates into the interior of the glass substrate 100 through the penetration channels, rapidly weakening the mechanical connections of the waste area 103. The etching solution further diffuses laterally into the first internal modified layer 101. Although it starts slightly later, due to its higher material activity, etching will begin preferentially compared to the unmodified glass substrate 100. When the glass substrate 100 located between the first internal modified layer 101 and the second internal modified layer 102 is completely removed, the edge chamfer of the glass substrate 100 is obtained.
[0054] In the description herein, it should be understood that the terms "upper," "lower," "left," "right," and other orientations or positional relationships are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used merely for descriptive distinction and have no special meaning.
[0055] In the description of this specification, references to terms such as "an embodiment," "example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.
[0056] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style of the specification is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
[0057] The technical principles of this application have been described above with reference to specific embodiments. These descriptions are merely for explaining the principles of this application and should not be construed as limiting the scope of protection of this application in any way. Based on this explanation, those skilled in the art can readily conceive of other specific embodiments of this application without inventive effort, and these embodiments will all fall within the scope of protection of this application.
Claims
1. A method for chamfering the edges of a glass substrate, characterized in that, Including the following steps: S1, using a laser dynamic focusing device (500), at least one laser beam is focused on the interior of the glass substrate (100) to be processed, and controlled to scan along at least one first planned trajectory (200) to form at least one first internal modification layer (101); wherein, the shape of the first internal modification layer (101) corresponds to the chamfer of the edge of the glass substrate (100); S2, using a laser dynamic focusing device (500), at least one laser beam is focused on the interior of the glass substrate (100) and controlled to scan along at least one second planned trajectory (300) to form at least one second internal modification layer (102); wherein, the second internal modification layer (102) is adjacent to the first internal modification layer (101) and located in the waste area (103); at least a portion of the second internal modification layer (102) forms a permeation channel penetrating both sides of the glass substrate (100) along the axial direction; S3, the glass substrate (100) after the formation of the first internal modified layer (101) and the second internal modified layer (102) is placed in a chemical etching solution. The chemical etching solution enters the interior of the glass substrate (100) through a penetration channel and etches the glass between the second internal modified layer (102), the first internal modified layer (101) and the second internal modified layer (102), as well as the first internal modified layer (101). After etching, the waste area (103) separates and falls off from the glass substrate (100) along the second internal modified layer (102) and forms an edge chamfer on the glass substrate (100).
2. The glass substrate edge chamfering method according to claim 1, characterized in that, Along the thickness direction of the glass substrate (100), the second internal modified layer (102) is tangent to the middle position of the first internal modified layer (101).
3. The glass substrate edge chamfering method according to claim 1, characterized in that, The laser beam used in step S2 is used to perform point processing on the upper and lower surfaces of the glass substrate (100) at positions corresponding to the first internal modified layer (101) to form a plurality of recesses on the glass substrate (100) that communicate with the first internal modified layer.
4. The glass substrate edge chamfering method according to claim 1, characterized in that, Step S2 further includes: focusing the laser beam used in step S2 onto the interior of the waste area and controlling it to scan along the third planned trajectory (400) to form at least one third internal modification layer, and dividing the waste area (103) into multiple independent waste segment areas through the third internal modification layer.
5. The glass substrate edge chamfering method according to claim 4, characterized in that, The third internal modification layer is connected to the second internal modification layer (102) and is radially and uniformly distributed on the waste area (103).
6. The glass substrate edge chamfering method according to claim 1, characterized in that, In step S3, ultrasonic waves are applied to the chemical etching solution to cleave the sample.
7. The glass substrate edge chamfering method according to claim 1, characterized in that, The laser beam used in step S2 is a Bessel beam.
8. The glass substrate edge chamfering method according to claim 1, characterized in that, The chamfered edge of the glass substrate (100) can be C-shaped or trapezoidal.
9. The glass substrate edge chamfering method according to any one of claims 1 to 8, characterized in that, The process of chamfering the edge of a storage disk substrate based on the glass substrate (100) to be processed includes the following steps: In step S1, the first laser beam is focused on the interior of the glass substrate (100) to be processed using a laser dynamic focusing device (500), and it is controlled to scan along the first planned trajectory (200) to form a first internal modified layer (101) corresponding to the shape of the chamfer of the outer edge of the glass substrate (100). Step S1 is executed again, and the second laser beam is focused on the interior of the glass substrate (100) to be processed using the laser dynamic focusing device (500), and it is controlled to scan along the second first planning trajectory (200) to form a first internal modified layer (101) corresponding to the shape of the inner edge chamfer of the glass substrate (100). Repeat step S2, using the laser dynamic focusing device (500) to focus the third laser beam onto the interior of the glass substrate (100) to be processed, and control it to scan along two different second planning trajectories (300) to form two second internal modified layers (102). One outer second internal modified layer (102) is adjacent to the outer side of the first internal modified layer (101) corresponding to the shape of the outer edge chamfer, and the other inner second internal modified layer (102) is adjacent to the inner side of the first internal modified layer (101) corresponding to the shape of the inner edge chamfer. In step S3, after etching with chemical etching solution, the waste area (103) outside the second internal modified layer (102) on the outside falls off along the second internal modified layer (102) on the outside, and the waste area (103) inside the second internal modified layer (102) on the inside falls off along the second internal modified layer (102) on the inside, thus obtaining the outer contour of the storage disk substrate and forming the outer edge chamfer and inner edge chamfer on the storage disk substrate.
10. The glass substrate edge chamfering method according to any one of claims 1 to 8, characterized in that, The laser dynamic focusing device (500) is sequentially configured with: a laser (501), a half-wave plate (502), a polarizing beam splitter (503), a beam expander (504), a spatial light modulator (505), a reflector (506), a lens group, and a focusing objective lens (509). The laser dynamic focusing device (500) further includes a control system and a focus adjustment module (510); the control system is connected to the laser (501), the spatial light modulator (505), and the stage (511) for supporting the glass substrate (100), and is used to control the operation of the laser (501), the spatial light modulator (505), and the movement of the stage (511); the focus adjustment module (510) is fixed on the focusing objective (509), and is used to measure the real-time distance between it and the surface of the glass substrate (100) and transmit it to the control system. The control system adjusts the distance between the focusing objective (509) and the surface of the glass substrate (100) according to the real-time distance, so that the laser beam is focused at the same depth inside the glass substrate (100) during the processing.