Control method and device of transverse magnetic field monocrystalline silicon growth process based on liquid level flow state visual observation, electronic equipment and storage medium

Abstract

The invention provides a control method and device for a transverse magnetic field monocrystalline silicon growth process based on liquid level flow state visual observation, electronic equipment and a storage medium, and relates to the technical field of semiconductor crystal pulling. Matching a corresponding adjusting process according to the actual condition of the obtained characteristic line, and adjusting the rotating speed and / or the magnetic field intensity of the crucible according to the matched adjusting process, so that the width of the characteristic line is moderate, and the characteristic line stably exists in the central position of the liquid level of the molten silicon solution; therefore, the characteristic line is adjusted before seeding, so that a solid-liquid interface is stable when seeding and shouldering are carried out, the growth interface of a crystal bar is stable, and the NG shouldering frequency is greatly reduced.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor crystal pulling technology, specifically relating to a control method, device, electronic equipment, and storage medium for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow. Background Technology

[0002] In the Czochralski (CZ) method for growing large-diameter (e.g., 300 mm) single-crystal silicon, thermal convection in the melt leads to temperature fluctuations and uneven oxygen content, severely affecting crystal quality. A transverse magnetic field is typically applied to suppress convection and ensure stable single-crystal growth. However, the optimization of matching magnetic field parameters (intensity, center position) with process parameters (crystal rotation, pot rotation) is highly dependent on experience, lacking real-time, intuitive control guidance, resulting in a high number of no-go (NG) errors during the shoulder formation process.

[0003] Currently, the industry commonly uses a "post-analysis" approach to optimize magnetic field and process parameters. This involves analyzing indicators such as the radial resistivity uniformity (RRU) and oxygen content distribution of the crystal rod after one batch of crystal growth is completed to infer the stability of the growth interface during the growth process, and then adjusting the process parameters for the next batch. This adjustment method is time-consuming, costly, and cannot intervene in anomalies during growth in real time. Therefore, it is necessary to provide a real-time control method for the stability of the growth interface to control the stability of the crystal growth process and reduce the number of no-go (NG) cycles during shoulder formation. Summary of the Invention

[0004] In view of this, the present invention provides a control method for the transverse magnetic field single crystal silicon growth process based on the visual observation of liquid surface flow to control the stability of the growth interface and reduce the number of NGs during the shoulder formation process.

[0005] It is also necessary to provide a device for the lateral magnetic field single-crystal silicon growth process based on the visual observation of liquid surface flow.

[0006] It is also necessary to provide an electronic device and a storage medium.

[0007] The technical solution adopted by this invention to solve its technical problem is:

[0008] A method for controlling a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow includes the following steps:

[0009] S1: When pulling a single crystal by a transverse magnetic field, determine whether characteristic lines exist and their morphological behavior on the surface of the molten silicon solution before crystal pulling;

[0010] S2: Match the corresponding adjustment process according to the actual situation of the obtained feature lines;

[0011] S3: Adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment process to make the feature line width moderate, while the feature line is stably located at the center of the molten silicon solution surface.

[0012] Preferably, in S1, the shape of the feature line refers to the feature line continuously oscillating or the feature line being stable but deviating from the center of the molten silicon solution surface or the width of the feature line.

[0013] Preferably, S2 specifically includes:

[0014] If no feature lines are observed during the acquisition process, the feature line visualization adjustment process is used to stimulate the appearance of feature lines and make the flow field state visible.

[0015] If the feature line is continuously oscillating, then different feature line stabilization adjustment processes are matched according to the amplitude of the continuous oscillation to stabilize the feature line.

[0016] If the obtained feature line is stable but deviates from the center of the molten silicon solution surface, then match the corresponding feature line position adjustment process to make the feature line stably exist at the center position of the molten silicon solution surface;

[0017] If the width of the feature line is greater than the standard line width, then the corresponding feature line width adjustment process is matched to stabilize the growth interface.

[0018] Preferably, the step of "if the feature line is continuously oscillating, then according to the amplitude of the continuous oscillation of the feature line, a corresponding feature line stabilization adjustment process is matched to stabilize the feature line" specifically: if the distance of the continuous oscillation of the feature line is more than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs.

[0019] If the distance of continuous oscillation of the feature line is less than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs.

[0020] Preferably, the feature line visualization adjustment process involves pre-adjusting the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±200 Gs.

[0021] The feature line position adjustment process involves adjusting the crucible rotation speed by ±0.5 rpm;

[0022] The feature line width adjustment process involves pre-adjusting the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±50GS.

[0023] Preferably, the standard line width is less than 2 mm.

[0024] A control device for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, the device comprising:

[0025] Acquisition module: used to acquire the presence and morphological behavior of feature lines in the molten silicon solution surface before crystal pulling when pulling single crystals in a transverse magnetic field;

[0026] Matching module: Used to match the corresponding adjustment method based on the actual situation of the acquired feature lines;

[0027] Adjustment module: used to adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment method, so that the feature line width is moderate, and the feature line is stably located at the center of the molten silicon solution surface.

[0028] Preferably, the matching module includes a pre-storage unit and a matching unit.

[0029] The pre-storage unit is used to pre-store different adjustment processes;

[0030] The matching unit is used to perform matching based on the actual situation of the acquired feature lines and the pre-stored adjustment process.

[0031] An electronic device includes: one or more processors; and one or more computer-readable storage media having instructions stored thereon;

[0032] When the instruction is executed by the one or more processors, the processors perform the control method for the lateral magnetic field single-crystal silicon growth process based on the visualization observation of liquid surface flow, as described above.

[0033] A computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, causes the processor to perform the control method for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, as described above.

[0034] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0035] The present invention provides a control method, apparatus, electronic device, and storage medium for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow. When pulling a single crystal using a transverse magnetic field, the presence and morphology of feature lines in the molten silicon solution surface before crystal pulling are obtained. Based on the actual situation of the obtained feature lines, a corresponding adjustment process is matched. The crucible rotation speed and / or magnetic field strength are adjusted according to the matched adjustment process to ensure that the feature line width is moderate and that the feature line stably exists at the center position of the molten silicon solution surface. Therefore, adjusting the feature lines before crystal pulling stabilizes the solid-liquid interface during crystal pulling and shoulder formation, thereby stabilizing the growth interface of the crystal rod and significantly reducing the number of no-go (NG) shoulder formations. Attached Figure Description

[0036] Figure 1 This is a block diagram of the control device for the transverse magnetic field single-crystal silicon growth process based on the visual observation of the liquid surface flow state.

[0037] Figure 2 This is a schematic diagram of the electronic device.

[0038] In the figure: Acquisition module 110, Matching module 120, Pre-storage unit 121, Matching unit 122, Adjustment module 130, Processor 210, Communication interface 220, Memory 230, Communication bus 240. Detailed Implementation

[0039] The technical solutions and effects of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0040] A method for controlling a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow includes the following steps:

[0041] S1: When pulling a single crystal by a transverse magnetic field, determine whether characteristic lines exist and their morphological behavior on the surface of the molten silicon solution before crystal pulling;

[0042] Among them, the characteristic line refers to the visible linear feature corresponding to the electromagnetic jet that appears on the free surface of the molten silicon solution under the action of a transverse magnetic field. Its direction is parallel to the direction of the magnetic field and is often manifested as a dark stripe in the observation system, commonly known as a "black line".

[0043] Electromagnetic jet is a directional, high-speed ribbon-like fluid formed within molten silicon under the action of a transverse magnetic field due to the Lorentz force.

[0044] S2: Match the corresponding adjustment process according to the actual situation of the obtained feature lines;

[0045] S3: Adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment process to make the feature line width moderate, while the feature line is stably located at the center of the molten silicon solution surface.

[0046] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0047] The present invention provides a control method, apparatus, electronic device, and storage medium for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow. When pulling a single crystal using a transverse magnetic field, the presence and morphology of feature lines in the molten silicon solution surface before crystal pulling are obtained. Based on the actual situation of the obtained feature lines, a corresponding adjustment process is matched. The crucible rotation speed and / or magnetic field strength are adjusted according to the matched adjustment process to ensure that the feature line width is moderate and that the feature line stably exists at the center position of the molten silicon solution surface. Therefore, adjusting the feature lines before crystal pulling stabilizes the solid-liquid interface during crystal pulling and shoulder formation, thereby stabilizing the growth interface of the crystal rod and significantly reducing the number of no-go (NG) shoulder formations by approximately 60%.

[0048] Specifically, the feature lines are adjusted before crystal pulling so that the temperature and flow rate fluctuations on the silicon solution surface before shoulder formation are suppressed to a level sufficient for stable single crystal growth, thereby reducing the number of pull-outs during shoulder formation and increasing the single crystal survival rate.

[0049] On the other hand, when the same single crystal furnace, the same product, and the same external environment are used, the optimal process obtained by adjusting the above method can be directly used in the next batch of crystal rod pulling, which greatly reduces the time for process optimization and reduces the waste of costs.

[0050] In one possible implementation, in S1, the morphology of the feature line refers to the feature line continuously oscillating or the feature line being stable but deviating from the center of the molten silicon solution surface or the width of the feature line.

[0051] In one possible implementation, S2 specifically includes:

[0052] If no feature lines are observed during the acquisition process, the feature line visualization adjustment process is used to stimulate the appearance of feature lines and make the flow field state visible.

[0053] If the feature line is continuously oscillating, then different feature line stabilization adjustment processes are matched according to the amplitude of the continuous oscillation to stabilize the feature line.

[0054] If the obtained feature line is stable but deviates from the center of the molten silicon solution surface, then match the corresponding feature line position adjustment process to make the feature line stably exist at the center position of the molten silicon solution surface;

[0055] If the width of the feature line is greater than the standard line width, then the corresponding feature line width adjustment process is matched to stabilize the growth interface.

[0056] Specifically, in the actual crystal pulling process, the feature lines are pre-adjusted based on the acquired feature lines to make them visible. If the feature lines exist, their stability and position are adjusted to ensure they are stable and located at the center of the liquid surface. If the feature lines are stable and located at the center of the liquid surface, the standard linewidth of the feature lines is adjusted to obtain the optimal process parameters under the same thermal field, the same external environment, and the same product.

[0057] Furthermore, the phrase "if the feature line is continuously oscillating, then according to the amplitude of the continuous oscillation of the feature line, a corresponding feature line stabilization adjustment process is matched to stabilize the feature line" specifically means: if the distance of the continuous oscillation of the feature line is more than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs; during the adjustment process, the crucible rotation is adjusted first and then the magnetic field is adjusted to reduce the impact on the thermal field.

[0058] If the distance of continuous oscillation of the feature line is less than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs.

[0059] Furthermore, the feature line visualization adjustment process involves pre-adjusting the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±200 Gs.

[0060] The feature line position adjustment process involves adjusting the crucible rotation speed by ±0.5 rpm;

[0061] The feature line width adjustment process involves pre-adjusting the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±50GS.

[0062] Furthermore, the standard linewidth is below 2mm. Using the above method, the number of crystal ingot pulls is reduced from 10 to 4.

[0063] Please refer to Figure 1 A control device for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, the device comprising:

[0064] Acquisition module 110: used to acquire whether and how the feature lines exist on the surface of the molten silicon solution before crystal pulling when pulling a single crystal in a transverse magnetic field;

[0065] Matching module 120: used to match the corresponding adjustment method according to the actual situation of the acquired feature lines;

[0066] Adjustment module 130: used to adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment method so that the feature line width is moderate, while the feature line is stably located at the center of the molten silicon solution surface.

[0067] Furthermore, the matching module 120 includes a pre-storage unit 121 and a matching unit 122.

[0068] The pre-storage unit 121 is used to pre-store different adjustment processes;

[0069] The matching unit 122 is used to perform matching based on the actual situation of the acquired feature lines and the pre-stored adjustment process.

[0070] An electronic device includes: one or more processors 210; and one or more computer-readable storage media having instructions stored thereon; when the instructions are executed by the one or more processors 210, the processors 210 perform the control method for a lateral magnetic field single-crystal silicon growth process based on liquid surface flow visualization observation as described above.

[0071] Please refer to Figure 2 This is a schematic diagram of an electronic device structure according to an embodiment of this application. Figure 2 As shown, the electronic device includes a processor 210, a communication interface 220, a memory 230, and a communication bus 240. The processor 210, communication interface 220, and memory 230 communicate with each other via the communication bus 240.

[0072] Memory 230 is used to store computer programs.

[0073] When the processor 210 executes the program stored in the memory 230, it implements the incremental compensation method for the liquid outlet distance of any of the above embodiments.

[0074] The communication interface 220 is used for communication between the above-mentioned electronic device and other devices.

[0075] The aforementioned communication bus 240 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus 240 can be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, it is represented by only one thick line in the figure, but this does not indicate that there is only one bus or one type of bus.

[0076] The processor 210 mentioned above may include, but is not limited to: a central processing unit (CPU), a network processor (NP), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0077] The aforementioned memory 230 may include, but is not limited to: read-only memory (ROM), random access memory (RAM), compact disc read-only memory (CD-ROM), electronically erasable programmable read-only memory (EEPROM), hard disk, floppy disk, flash memory, etc.

[0078] A computer-readable storage medium having a computer program stored thereon, which, when executed by a processor 210, causes the processor 210 to perform the control method for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, as described above.

[0079] The various embodiments in this specification are related to each other and are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0080] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0081] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM, RAM, magnetic disk, optical disk), and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0082] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

[0083] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed in this application can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0084] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0085] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0086] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0087] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0088] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, ROM, RAM, magnetic disks, or optical disks.

[0089] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the invention. Those skilled in the art will understand that implementing all or part of the above-described embodiments and making equivalent changes in accordance with the claims of the present invention are still within the scope of the invention.

Claims

1. A method for controlling the growth process of single-crystal silicon with a transverse magnetic field based on visual observation of liquid surface flow, characterized in that, Includes the following steps: S1: When pulling a single crystal by a transverse magnetic field, determine whether characteristic lines exist and their morphological behavior on the surface of the molten silicon solution before crystal pulling; S2: Match the corresponding adjustment process according to the actual situation of the obtained feature lines; S3: Adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment process to make the feature line width moderate, while the feature line is stably located at the center of the molten silicon solution surface.

2. The control method for transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 1, characterized in that, In S1, the shape of the feature line refers to the feature line continuously oscillating or the feature line being stable but deviating from the center of the molten silicon solution surface or the width of the feature line.

3. The control method for transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 2, characterized in that, S2 specifically includes: If no feature lines are observed during the acquisition process, the feature line visualization adjustment process is used to stimulate the appearance of feature lines and make the flow field state visible. If the feature line is continuously oscillating, then different feature line stabilization adjustment processes are matched according to the amplitude of the continuous oscillation to stabilize the feature line. If the obtained feature line is stable but deviates from the center of the molten silicon solution surface, then match the corresponding feature line position adjustment process to make the feature line stably exist at the center position of the molten silicon solution surface; If the width of the feature line is greater than the standard line width, then the corresponding feature line width adjustment process is matched to stabilize the growth interface.

4. The control method for transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 3, characterized in that, The phrase "if the feature line is continuously oscillating, then according to the amplitude of the continuous oscillation of the feature line, match the corresponding feature line stabilization adjustment process to stabilize the feature line" specifically means: if the distance of the continuous oscillation of the feature line is more than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs. If the distance of continuous oscillation of the feature line is less than 1 / 4 of the diameter of the quartz crucible, the feature line stabilization adjustment process is to pre-adjust the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjust the magnetic field strength by ±100-200 Gs.

5. The control method for transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 3, characterized in that, The feature line visualization adjustment process involves pre-adjusting the crucible rotation speed by ±2-3 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±200 Gs. The feature line position adjustment process involves adjusting the crucible rotation speed by ±0.5 rpm; The feature line width adjustment process involves pre-adjusting the crucible rotation speed by ±0.5 rpm, and if the adjustment is ineffective, adjusting the magnetic field strength by ±50GS.

6. The control method for transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 4, characterized in that, The standard line width is below 2mm.

7. A control device for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, characterized in that, The device includes: Acquisition module: used to acquire the presence and morphological behavior of feature lines in the molten silicon solution surface before crystal pulling when pulling single crystals in a transverse magnetic field; Matching module: Used to match the corresponding adjustment method based on the actual situation of the acquired feature lines; Adjustment module: used to adjust the crucible rotation speed and / or magnetic field strength according to the matching adjustment method, so that the feature line width is moderate, and the feature line is stably located at the center of the molten silicon solution surface.

8. The control device for the transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in claim 7, characterized in that, The matching module includes a pre-storage unit and a matching unit. The pre-storage unit is used to pre-store different adjustment processes; The matching unit is used to perform matching based on the actual situation of the acquired feature lines and the pre-stored adjustment process.

9. An electronic device, characterized in that, include: One or more processors; and one or more computer-readable storage media on which instructions are stored; When the instruction is executed by the one or more processors, the processor performs the control method for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow as described in any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that, It stores a computer program that, when executed by a processor, causes the processor to perform the control method for a transverse magnetic field single-crystal silicon growth process based on visual observation of liquid surface flow, as described in any one of claims 1 to 6.

Images