Semiconductor process chamber, semiconductor process equipment and temperature control method of dielectric window

Abstract

The invention discloses a semiconductor process chamber, semiconductor process equipment and a temperature method of a dielectric window, and belongs to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body, a dielectric window and a cooling device, the dielectric window is arranged above the process chamber, the cooling device comprises a cooling chamber, the cooling chamber is arranged on the upper surface of the dielectric window and extends in the circumferential direction of the dielectric window, the cooling chamber is an annular chamber, and the annular chamber is provided with an annular area. A first airflow space is formed in the annular area of the cooling cavity, cooling gas can be introduced into the first airflow space, a second airflow space is formed in a center area defined by the annular area, and the second airflow space communicates with the first airflow space; and the cooling gas enters the first airflow space, circulates in the first airflow space and then enters the second airflow space so as to cool the dielectric window. The semiconductor process equipment comprises the semiconductor process chamber.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a temperature control method for a semiconductor process chamber, semiconductor process equipment, and dielectric window. Background Technology

[0002] Semiconductor process equipment is crucial for semiconductor manufacturing. Currently, the most commonly used etching process is dry etching, also known as plasma etching. Specifically, it utilizes a high-frequency electrical signal generated by an RF power supply to create a magnetic field within the chamber of the semiconductor process equipment via a coil. Under the influence of this magnetic field, the process gas within the chamber ionizes to generate plasma. This plasma diffuses to the surface of the wafer supported by the substrate, thus etching the wafer.

[0003] Semiconductor process equipment includes a process chamber and a dielectric window located above the process chamber. The area that generates plasma is closer to the dielectric window, so the distance the plasma diffuses to the dielectric window is shorter. Most of the plasma diffuses to the dielectric window, which increases the heat of the dielectric window. Therefore, the dielectric window needs to be cooled during the process and heated during non-process processes to ensure the temperature stability of the dielectric window.

[0004] In the prior art, the cooling devices of semiconductor process equipment mainly use compressed air to dissipate heat to a local area on the upper surface of the dielectric window. As a result, the cooling effect of the cooling device is poor. Summary of the Invention

[0005] The purpose of this application is to provide a temperature control method for semiconductor process chambers, semiconductor process equipment, and dielectric windows, which can solve the problem of poor cooling effect of cooling devices for semiconductor process equipment in related technologies.

[0006] In a first aspect, embodiments of this application provide a semiconductor process chamber, including a chamber body, a dielectric window, and a cooling device, wherein the dielectric window is disposed above the chamber body.

[0007] The cooling device includes a cooling chamber disposed on the upper surface of the medium window and extending circumferentially along the medium window. The cooling chamber is an annular chamber with an annular region. The annular region of the cooling chamber forms a first airflow space, through which cooling gas can be introduced. The central region enclosed by the annular region forms a second airflow space, which is connected to the first airflow space.

[0008] The cooling gas enters the first airflow space and circulates within it before entering the second airflow space to cool the medium window.

[0009] Secondly, embodiments of this application also provide a semiconductor process apparatus, including the semiconductor process chamber described above.

[0010] Thirdly, embodiments of this application also provide a temperature control method for a dielectric window, applied to the aforementioned semiconductor process equipment, the method comprising:

[0011] Set the preset temperature;

[0012] The flow rate of cooling gas is adjusted according to the preset temperature and radio frequency power;

[0013] Temperature of the detection medium window;

[0014] When the temperature is lower than the preset temperature, the heating power of the heating element is increased; when the temperature is higher than the preset temperature, the heating power of the heating element is decreased, so that the temperature of the medium window is maintained at the preset temperature.

[0015] In this embodiment, the cooling air not only circulates within the first airflow space of the cooling chamber to dissipate heat from the annular region of the cooling chamber, but also further flows into the second airflow space to dissipate heat from the central region enclosed by the cooling chamber. The annular region and the central region correspond to different regions of the medium window, respectively. Thus, the cooling device simultaneously dissipates heat from different regions of the medium window, increasing the heat dissipation area of ​​the medium window and improving the cooling effect of both the device and the window. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of semiconductor process equipment disclosed in related technologies;

[0017] Figure 2 This is a schematic diagram showing the cooperation of the medium window, cooling device, temperature control device and radio frequency device disclosed in the embodiments of this application;

[0018] Figure 3 This is a schematic diagram of the distribution of heating elements disclosed in the embodiments of this application;

[0019] Figure 4 This is an exploded view of the medium window and cooling device disclosed in the embodiments of this application;

[0020] Figure 5 This is a schematic diagram of the cooling chamber structure disclosed in the embodiments of this application;

[0021] Figure 6 This is a cross-sectional view of the cooling chamber and medium window disclosed in the embodiments of this application;

[0022] Figure 7 yes Figure 6 Sectional view along direction AA;

[0023] Figure 8 This is a schematic diagram of the structure of the medium window disclosed in the embodiments of this application;

[0024] Figure 9 This is a schematic diagram of the temperature distribution of the dielectric window disclosed in the embodiments of this application under a radio frequency power of 4KW;

[0025] Figure 10 This is a coordinate schematic diagram showing the change of temperature and radio frequency power of the dielectric window over time as disclosed in the embodiments of this application;

[0026] Figure 11 This is a flowchart of the temperature control method for the medium window disclosed in the embodiments of this application.

[0027] Explanation of reference numerals in the attached figures:

[0028] 100-chamber body,

[0029] 110-Media window, 111-Upper layer of media window, 112-Lower layer of media window, 110a-Slotted groove, 110b-Raised strip, 1101-Slotted opening, 110c-Detection mounting hole, 110d-Heating feed hole, 110e-Protrusion,

[0030] 120-base,

[0031] 200-Cooling device; 210-Air amplifier; 220-Airflow connector; 230-Cooling chamber; 230a-First airflow space; 2301-Inner airflow channel; 2302-Outer airflow channel; 230b-Second airflow space; 231-Top wall; 232-Inner side wall; 233-Outer side wall; 234-First strip partition; 234a-First gap; 235-Second strip partition; 235a-Second gap; 236-Airflow inlet; 237-Airflow outlet.

[0032] 300-Temperature control device, 310-Temperature sensing element, 320-Heating element, 321-Heating wire, 322-Electrode sheet, 320a-Heating zone, 330-Flow regulator, 340-Thermostat

[0033] 400 - RF device, 410 - RF power supply, 420 - Upper matching unit, 430 - Lower matching unit, 440 - Coil, 441 - Inner coil, 442 - Outer coil

[0034] 500-wafer,

[0035] 600-plasma region,

[0036] 700 - Heater. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0038] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0039] In related technologies, refer to Figure 1 As shown, the semiconductor process equipment includes a chamber body 100, a dielectric window 110, a cooling device, and a radio frequency (RF) device 400. The dielectric window 110 is disposed above the chamber body 100, and the RF device 400 is used to provide the plasma required for the process. The cooling device is used to cool the dielectric window 110.

[0040] Specifically, the RF device 400 includes an RF power supply 410, an upper matching unit 420, and a coil 440. The high-frequency electrical signal generated by the RF power supply 410 is provided to the coil 440 through the upper matching unit 420, causing the coil 440 to generate a plasma region 600 below the dielectric window 110. A base 120 for supporting the wafer 500 is provided within the chamber body 100. The plasma region 600 is located between the dielectric window 110 and the base 120, allowing the plasma to diffuse to the surface of the wafer 500 supported by the base 120, thus etching the wafer 500. Simultaneously, the plasma also diffuses to the dielectric window 110, raising its temperature. Optionally, the RF device 400 also includes a lower matching unit 430, through which the high-frequency electrical signal generated by the RF power supply 410 can be fed into the lower electrode device (including the base 120) within the chamber body 100.

[0041] To prevent the medium window 110 from overheating, a cooling device is used to cool it. The cooling device includes an air amplifier, a heater 700, and a cooling chamber 230. The cooling chamber 230 is located on the upper surface of the medium window 110, forming an annular channel with the medium window 110. This annular channel has an air inlet and an air outlet. The air outlet is connected to the inlet of the air amplifier, and the outlet of the air amplifier is connected to the inlet of the heater 700. The outlet of the heater 700 is also connected to the air inlet. Thus, the air amplifier, heater 700, and cooling chamber 230 form a gas circulation channel. The airflow sequentially flows through the air amplifier, heater 700, and cooling chamber 230, reaching the upper surface of the medium window 110. The airflow exchanges heat with the medium window 110, thereby cooling it. Simply put, it uses high-pressure compressed air to enter the air amplifier. Relying on the special structural design of the air amplifier, the expansion process of the compressed air creates a negative pressure zone, which draws in the hot air in the annular channel, and then the gas circulates in the annular channel through other pipelines.

[0042] However, the heat dissipation area of ​​the medium window 110 is only the area opposite to the cooling chamber 230. That is, the gas in the gas circulation channel only flows to a local area of ​​the medium window 110, resulting in a small heat dissipation area of ​​the medium window 110 and poor heat dissipation effect, thus leading to poor cooling effect of the cooling device. In addition, related technologies generally cool the device by circulating the gas internally, resulting in a low amount of heat carried away by the gas.

[0043] In addition, the cooling device can also control the temperature of the medium window. The specific temperature control process is as follows: when the temperature of the medium window 110 is low, the heating power of the heater 700 increases; when the temperature of the medium window 110 is high, the heating power of the heater 700 decreases, so as to achieve temperature stability of the medium window 110. However, when the RF power of the RF power supply 410 is low, the cooling device can stably control the medium window. When the RF power supply 410 is high, the cooling effect of the cooling device is affected by the heating of the heater 700, making it difficult to control the heat dissipation effect of the cooling device, and thus making it difficult to stably control the medium window 110.

[0044] Furthermore, coil 440 includes inner coil 441 and outer coil 442. During the process, the plasma region 600 generated is located between inner coil 441 and outer coil 442. Therefore, when the radio frequency power increases, the temperature of the region between inner coil 441 and outer coil 442 is higher, resulting in poor temperature uniformity of dielectric window 110 in the radial direction and poor cooling uniformity of the cooling device.

[0045] Based on this, embodiments of this application provide a temperature control method for a semiconductor process chamber, semiconductor process equipment, and dielectric window to solve the problems of poor cooling effect, poor cooling uniformity, and difficulty in stable temperature control of the aforementioned cooling devices.

[0046] The temperature control method for semiconductor process chambers, semiconductor process equipment, and dielectric windows provided in this application will be described in detail below with reference to the accompanying drawings and through specific embodiments and application scenarios.

[0047] Please refer to Figures 2-10 The semiconductor process chamber disclosed in this application includes a chamber body 100, a dielectric window 110, and a cooling device 200, wherein, according to reference Figure 1 As shown, the chamber body 100 is used to provide the process environment. The main components of the semiconductor process chamber are installed on the chamber body 100. The dielectric window 110 can be a dielectric window, which can be a circular structure or a square structure, etc. The dielectric window 110 is located above the chamber body 100. The chamber body 100 and the dielectric window 110 together form a closed cavity. During the process, the closed cavity is in a vacuum state.

[0048] Cooling device 200 uses air cooling to cool the medium window 110. (Reference) Figure 2 As shown, the cooling device 200 includes a cooling chamber 230, which is disposed on the upper surface of the medium window 110 and extends circumferentially along the medium window 110. The cooling chamber 230 is an annular chamber. The annular chamber has an annular region, which forms a first airflow space 230a. Cooling gas can be introduced into the first airflow space 230a. In this embodiment, the specific type of cooling gas is not limited, as long as it can flow to the upper surface of the medium window 110 to cool the medium window 110. Moreover, the central region enclosed by the annular region forms a second airflow space 230b, which is connected to the first airflow space 230a. The annular region and the central region correspond to different positions of the medium window 110. Optionally, the lower end of the cooling chamber 230 is open, and the cooling chamber 230 directly covers the upper surface of the medium window 110; the cooling chamber 230 can be directly provided with an airflow outlet 237, and the second airflow space 230b is connected to the first airflow space 230a through the airflow outlet 237, or the second airflow space 230b and the first airflow space 230a are connected through a separate pipeline.

[0049] Thus, the cooling gas enters the first airflow space 230a and circulates within it before entering the second airflow space 230b to cool the medium window 110. Specifically, the cooling gas first dissipates heat from the annular region of the medium window 110 and then from the central region, allowing the airflow to carry away the heat from the medium window 110, thereby achieving heat dissipation.

[0050] In this embodiment, the cooling air not only circulates within the first airflow space 230a of the cooling chamber 230 to dissipate heat from the annular region of the cooling chamber 230, but the compressed air can also further flow into the second airflow space 230b to dissipate heat from the central region enclosed by the cooling chamber 230. The annular region and the central region correspond to different regions of the medium window 110, respectively. Thus, the cooling device 200 simultaneously dissipates heat from different regions of the medium window 110, increasing the heat dissipation area of ​​the medium window 110 and improving the cooling effect of the cooling device 200 and the heat dissipation effect of the medium window 110.

[0051] Optionally, the second airflow space 230b is connected to the atmosphere, that is, the cooling device 200 adopts an open heat dissipation structure, and more fresh air can be introduced during the circulation of cooling gas, which is more conducive to further improving the cooling effect of the cooling device 200 and further improving the heat dissipation effect of the medium window 110.

[0052] In this application, the semiconductor process chamber further includes a temperature control device 300, which is used to stably control the temperature of the dielectric window 110. The temperature control device 300 includes a temperature sensing element 310 and a heating element 320 connected in communication. The temperature sensing element 310 can be, but is not limited to, a temperature sensor. The temperature sensing element 310 is disposed on the dielectric window 110 to detect the temperature of the dielectric window 110. Optionally, the temperature sensing element 310 can be disposed on the upper surface of the dielectric window 110 or embedded inside the dielectric window 110. In short, the temperature probe of the temperature sensing element 310 extends into the dielectric window 110 to detect the temperature of the dielectric window 110.

[0053] The heating element 320 can be an electric heating element, specifically an electric heating wire, an electric heating plate, or the like. The shape of the electric heating wire can be spiral, disc, or the like. This application embodiment does not limit the specific structure of the heating element 320. The heating element 320 is embedded within the medium window 110.

[0054] In this embodiment, as Figure 3As shown, the dielectric window 110 includes an upper dielectric window layer 111 and a lower dielectric window layer 112. A heating element 320 is located between the upper dielectric window layer 111 and the lower dielectric window layer 112. The thickness of the upper dielectric window layer 111 ranges from 5mm to 10mm, and the thickness of the lower dielectric window layer 112 ranges from 20mm to 40mm. The heating element 320 includes a heating wire 321 and electrode plates 322. The upper dielectric window layer 111, the heating wire 321, and the lower dielectric window layer 112 are bonded together by thermoforming. The thickness of the heating element 320 is 10um-200um. The power of the heating wire 321 is between 200W and 2500W. The heating wire 321 includes multiple concentric circular wire segments connected end-to-end. Electrode plates 322 are connected to both ends of the heating wire 321, and these two electrode plates 322 are electrically connected to the positive and negative terminals of an external power supply, respectively, to energize and heat the heating wire 321. Optionally, refer to... Figure 7 As shown, the upper layer 111 of the dielectric window is provided with a detection mounting hole 110c and a heating feed hole 110d. The detection mounting hole 110c is used to install the temperature probe of the temperature detection element 310. The heating feed hole 110d is used to feed the electrode plate 322. The diameter of the electrode plate 322 is 3mm-10mm. The diameter of the heating feed hole 110d is larger than the diameter of the electrode plate 322.

[0055] The heating element 320 is used to adjust the heating state according to the temperature detected by the temperature sensing element 310, so as to maintain the temperature of the medium window 110 at a preset temperature. Specifically, when the temperature detected by the temperature sensing element 310 is lower than the preset temperature, the heating effect of the heating element 320 is increased; when the temperature detected by the temperature sensing element 310 is higher than the preset temperature, the heating effect of the heating element 320 is decreased. When the heating element 320 is an electric heating element, the heating effect is adjusted by increasing or decreasing the heating power.

[0056] Optionally, the preset temperature can be a temperature value or a temperature range. It should be noted that the preset temperature can be set as needed; that is, the preset temperature is not a fixed temperature value or temperature range. Further, optionally, the preset temperature can be 110℃.

[0057] Optionally, such as Figure 2 As shown, the temperature control device 300 also includes a temperature controller 340, which is communicatively connected to the temperature detection element 310 and the heating element 320. As an automatic control element, the temperature controller 340 can automatically control the heating element 320 according to the temperature detected by the temperature detection element 310.

[0058] In this embodiment, the cooling device 200 and the temperature control device 300 are set separately. The heating process of the heating element 320 on the medium window 110 is independent of the air-cooled medium window 110 process. The heating element 320 is not affected by the air-cooling process when heating the medium window 110, and similarly, the air-cooling process is not affected by the heating element 320, thus achieving decoupling between the cooling and heating processes. Therefore, under high radio frequency power conditions, the medium window 110 accumulates more heat. The compressed gas flows through the first airflow space 230a in the cooling chamber 230. This process is not affected by the heating element 320, which is beneficial to improving the cooling and heat dissipation effect of the medium window 110. It is also beneficial to quickly cool down the medium window 110 and maintain it at the preset temperature. At the same time, the temperature of the medium window 110 is monitored in real time by using the temperature detection element 310 and the heating element 320 connected by communication, and the heating state of the heating element 320 is adjusted in real time according to the monitored temperature to further stabilize the temperature control.

[0059] Therefore, the solution in this application decouples the air cooling process from the heating process, so that the two do not affect each other, which is beneficial for stable temperature control of the dielectric window 110 under high radio frequency power conditions.

[0060] In an optional embodiment, refer to Figure 2 As shown, the cooling device 200 also includes an air amplifier 210 and an airflow connector 220. The inlet of the air amplifier 210 is used to introduce compressed gas, which serves as the cooling gas. The air amplifier 210 uses a small amount of compressed gas as a power source to drive the surrounding airflow, forming a high-pressure, high-speed airflow, thus increasing the flow rate of the compressed gas. The inlet of the air amplifier 210 can be connected to components that generate compressed air, such as an air compressor, or it can be connected to a plant to directly utilize the compressed gas discharged from the plant. In this embodiment, compressed dry air is introduced into the inlet of the air amplifier 210.

[0061] An airflow connector 220 is disposed above the cooling chamber 230. Optionally, the airflow connector 220 is pressed against the top wall 231 of the cooling chamber 230. The air amplifier 210, the airflow connector 220, and the first airflow space 230a are connected in sequence. That is, the inlet end of the airflow connector 220 is connected to the outlet end of the air amplifier 210, and the outlet end of the airflow connector 220 is connected to the first airflow space 230a of the cooling chamber 230.

[0062] Optionally, there are multiple air amplifiers 210, airflow connectors 220, and first airflow spaces 230a, which are spaced apart circumferentially around the medium window 110. Each air amplifier 210 is connected to its corresponding first airflow space 230a via its corresponding airflow connector 220. This increased number of air amplifiers 210 helps to increase the compressed gas flow rate, further improving cooling and heat dissipation. The total compressed gas flow rate of all air amplifiers 210 varies within the range of 200 L / min to 1000 L / min. Further, optionally, the multiple airflow connectors 220, multiple air amplifiers 210, and multiple first airflow spaces 230a are evenly distributed circumferentially around the medium window 110.

[0063] In this embodiment, the airflow connector 220 is pressed against the cooling chamber 230. Therefore, the weight of each airflow connector 220 and the weight of each air amplifier 210 act on the cooling chamber 230, which is conducive to the close contact between the cooling chamber 230 and the medium window 110. As a result, gaps are less likely to form between the upper surface of the cooling chamber 230 and the medium window 110, thereby avoiding airflow leakage in the first airflow space 230a, which is conducive to improving the air cooling effect and thus improving the temperature uniformity.

[0064] In this embodiment, there are four first airflow space 230a, four airflow connectors 220, and four air amplifiers 210.

[0065] Of course, in other embodiments, multiple airflow connectors 220 can be installed in other locations of the cooling chamber 230, that is, the gravity of the airflow connectors 220 and the air amplifier 210 does not act on the cooling chamber 230, and the cooling chamber 230 and the medium window 110 are connected separately in other ways to avoid gaps.

[0066] In a further embodiment, the temperature control device 300 also includes a flow regulator 330, which may be, but is not limited to, a flow regulating valve. The flow regulator 330 is disposed at the inlet end of the air amplifier 210 and is used to adjust the flow rate of compressed gas according to different preset temperatures. Optionally, this adjustment process can be performed manually or automatically using a semiconductor process equipment.

[0067] Optionally, the preset temperature can be multiple temperature ranges, including a low-temperature range, a medium-temperature range, and a high-temperature range. The low-temperature range is 90℃-100℃, the medium-temperature range is 100℃-115℃, and the high-temperature range is 115℃-125℃. The compressed air flow rate range is 200L / min-1000L / min, and the compressed air flow rate is divided into multiple levels, with two or more levels. Different levels correspond to the low-temperature range, the medium-temperature range, and the high-temperature range, respectively. When the preset temperature is within different temperature ranges, the flow regulating valve adjusts the compressed gas flow rate to the corresponding level, so that the compressed gas flow rate is adapted to the preset temperature. Of course, the flow rate range can be further divided into more levels, with at least one of the low-temperature range, medium-temperature range, and high-temperature range further subdivided to correspond to multiple flow rate levels.

[0068] In this embodiment, the flow rate regulator 330 adjusts the compressed gas flow rate according to the preset temperature, so that the air cooling effect of the cooling device 200 is adapted to the preset temperature to be maintained, avoiding the air cooling effect being too large or too small, which in turn helps to accurately and stably control the temperature through the temperature control device 300.

[0069] Of course, in other embodiments, the temperature control device 300 may not have a flow regulating element 330. The preset temperature may be a fixed temperature value or temperature range to keep the compressed gas flow constant. The temperature of the medium window 110 is controlled by adjusting the heating state of the heating element 320 only according to the detected temperature.

[0070] In one optional embodiment, there is one temperature sensing element 310 and one heating element 320, and the heating area 320a formed by the heating element 320 is opposite to the first airflow space 230a or the second airflow space 230b.

[0071] In another embodiment, reference Figure 2 and Figure 3 As shown, there are multiple temperature sensing elements 310 and heating elements 320. Each heating element 320 forms a heating region 320a that extends circumferentially along the medium window 110. The heating regions 320a are sequentially arranged radially along the medium window 110. Each first airflow space 230a and second airflow space 230b is opposite to at least one heating region 320a, and each heating region 320a corresponds to at least one temperature sensing element 310. In other words, each first airflow space 230a and second airflow space 230b corresponds to at least one temperature sensing element 310.

[0072] In this embodiment, multiple temperature sensing elements 310 and multiple heating elements 320 are used to control the temperature of the upper surface of the medium window 110 in the radial direction. Each set of temperature sensing elements 310 and heating elements 320 controls the temperature of different areas of the medium window 110, which helps to improve the temperature uniformity in the radial direction of the medium window 110.

[0073] Optionally, the number of heating elements 320 is three, and the heating area 320a formed by each heating element 320 is an annular heating area. Each annular heating area corresponds to at least two temperature sensing elements 310, and the temperature sensing elements 310 corresponding to each annular heating area are distributed at intervals in the circumference of the annular heating area to detect the temperature at different positions in the same area. Therefore, each annular heating area is provided with a temperature measuring mounting hole and a heating feed hole 110d. The number of temperature measuring mounting holes is greater than or equal to the number of annular heating areas, and the number of heating feed holes 110d is twice the number of annular heating areas. Of course, the number of heating elements 320 can also be set to other numbers, the heating area 320a can be of other shapes, and the number of temperature sensing elements 310 corresponding to each heating area 320a can also be other numbers.

[0074] In the scheme of this application, reference is made to Figures 5-7 As shown, the cooling chamber 230 includes a top wall 231, an inner side wall 232, and an outer side wall 233. The top wall 231, the inner side wall 232, and the outer side wall 233 are all annular structures, making the formed cooling chamber 230 annular. The area between the top wall 231 and the inner coil 441 and the outer coil 442 is located on the periphery of the inner side wall 232 relative to the outer side wall 233. The top wall 231 is connected to the inner side wall 232 and the outer side wall 233 respectively. The inner side wall 232, the top wall 231, and the outer side wall 233 form a first airflow space 230a. Specifically, the inner side wall 232, the top wall 231, the outer side wall 233, and the upper surface of the medium window 110 form the first airflow space 230a. Optionally, the top wall 231, the inner side wall 232, and the outer side wall 233 can be an integral structure or a separate structure; the inner side wall 232 and the outer side wall 233 are parallel to the axis of the cooling chamber 230, and the plane where the top wall 231 is located is perpendicular to the axis of the cooling chamber 230.

[0075] like Figure 5 As shown, the inner wall 232 encloses a second airflow space 230b. Specifically, the inner wall 232 and the upper surface of the medium window 110 form the second airflow space 230b. That is, the area of ​​the upper surface of the medium window 110 corresponding to the second airflow space 230b is exposed and not covered by the cooling chamber 230. The inner wall 232 is provided with an airflow outlet 237, and the first airflow space 230a communicates with the second airflow space 230b through the airflow outlet 237.

[0076] In this embodiment, the inner wall 232 can cooperate with other structures to directly form the first airflow space 230a. At the same time, the inner wall 232 directly encloses the second airflow space 230b, which helps to simplify the structure of the cooling chamber 230.

[0077] In this embodiment, the first airflow space 230a is an annular space and the second airflow space 230b is a circular space. The first airflow space 230a is opposite to at least one heating area 320a, and the second airflow space 230b is opposite to at least one heating area 320a. In this way, the area of ​​the medium window 110 corresponding to the cooling chamber 230 is further divided into zones for temperature control, which is more conducive to improving the temperature uniformity in the radial direction of the medium window 110.

[0078] Of course, in other embodiments, the cooling chamber 230 may also adopt other structures to form an airflow space 230a and a second airflow space 230b.

[0079] In an optional embodiment, the cooling chamber 230 further includes a first strip-shaped baffle 234 connected to the top wall 231. The first strip-shaped baffle 234 extends radially along the medium window 110 and is a straight baffle. Both ends of the first strip-shaped baffle 234 can be connected to the inner sidewall 232 and the outer sidewall 233. The first strip-shaped baffle 234, the inner sidewall 232, the top wall 231, the outer sidewall 233, and the upper surface of the medium window 110 form a first airflow space 230a. Optionally, the first strip-shaped baffle 234 can be connected to the top wall 231, to the inner sidewall 232, and to the outer sidewall 233 by welding, bonding, or other methods, or the relevant structures can be directly machined onto the integral material. Specifically, the cooling chamber 230 is provided with an airflow inlet 236 and an airflow outlet 237. The first airflow space 230a is connected to the airflow inlet 236 and the airflow outlet 237 respectively. The airflow inlet 236 and the airflow outlet 237 are located on both sides of the first strip-shaped partition 234, so that the gas entering the first airflow space 230a flows in one direction.

[0080] In another embodiment, reference Figure 5 As shown, there are multiple first strip-shaped partitions 234, which are spaced apart circumferentially along the medium window 110. Moreover, each first strip-shaped partition 234 extends radially along the medium window 110. Two adjacent first strip-shaped partitions 234, the inner sidewall 232, the top wall 231, the outer sidewall 233, and the upper surface of the medium window 110 form a first airflow space 230a. The multiple first strip-shaped partitions 234 divide the internal space of the cooling chamber 230 into multiple first airflow spaces 230a.

[0081] Optionally, the number of first strip-shaped baffles 234 is equal to the number of first airflow spaces 230a. Each first strip-shaped baffle 234 has the same structure and shape, and the first strip-shaped baffles 234 are evenly distributed along the circumference of the medium window 110, thereby dividing the internal space of the cooling chamber 230 into multiple first airflow spaces 230a of equal volume. Of course, the first strip-shaped baffles 234 may also be unevenly distributed along the circumference of the medium window 110, and the volumes of the formed first airflow spaces 230a may also be unequal.

[0082] Based on the fact that there are multiple first airflow spaces 230a, such as Figure 4 As shown, there are multiple air amplifiers 210. Each air amplifier 210 is connected to a first airflow space 230a, and each first airflow space 230a is connected to at least one temperature detection element 310. In other words, multiple temperature detection elements 310 can be spaced out in the circumferential direction of the medium window 110.

[0083] In this embodiment, by setting multiple first strip-shaped baffles 234, the internal space of the cooling chamber 230 is divided into multiple first airflow spaces 230a. Multiple airflows simultaneously cool the medium window 110, which helps to improve the temperature uniformity of the medium window 110 in the circumferential direction.

[0084] In the scheme of this application, reference is made to Figures 5-7 As shown, the cooling chamber 230 also includes a second strip-shaped baffle 235, which is connected to the top wall 231. The two can be connected by welding, bonding, or other methods, or the relevant structure can be directly processed into the integral material. The second strip-shaped baffle 235 extends circumferentially along the medium window 110. Moreover, the second strip-shaped baffle 235 is located between the inner sidewall 232 and the outer sidewall 233, and is located within the first airflow space 230a, serving to separate the first airflow space 230a. Optionally, if there are multiple first airflow spaces 230a, the second strip-shaped baffle 235 can be an arc-shaped baffle; if there is only one first airflow space 230a, the second strip-shaped baffle 235 can be an annular baffle.

[0085] The second strip-shaped partition 235 divides each of the first airflow spaces 230a into an inner airflow channel 2301 and an outer airflow channel 2302. The second strip-shaped partition 235 and the inner sidewall 232 form the inner airflow channel 2301, and the second strip-shaped partition 235 and the outer sidewall 233 form the outer airflow channel 2302. Specifically, the second strip-shaped partition 235, the inner sidewall 232, and the first strip-shaped partition 234 together form the inner airflow channel 2301, and the second strip-shaped partition 235, the outer sidewall 233, and the first strip-shaped partition 234 together form the outer airflow channel 2302. The inner airflow channel 2301 and the outer airflow channel 2302 are connected, and the inner airflow channel 2301 is connected to the second airflow space 230b through the airflow outlet 237.

[0086] Optionally, there are at least two first strip-shaped baffles 234 and at least two first airflow spaces 230a. Each first airflow space 230a contains at least one second strip-shaped baffle 235. Thus, two adjacent first strip-shaped baffles 234, the inner sidewall 232, and the second strip-shaped baffle 235 together form an inner airflow channel 2301, and two adjacent first strip-shaped baffles 234, the outer sidewall 233, and the second strip-shaped baffle 235 together form an outer airflow channel 2302. The inner airflow channel 2301 and the outer airflow channel 2302 are respectively opposite to different heating regions 320a. That is, in the radial direction of the medium window 110, the cooling chamber 230 is opposite to at least two heating regions 320a. Each heating region 320a is temperature-controlled by a separate temperature sensing element 310 and a heating element 320. Therefore, further partitioning and temperature-controlling the surface of the medium window 110 corresponding to the cooling chamber 230 is beneficial for further improving the temperature uniformity of the medium window 110. Optionally, the inner airflow channel 2301 of each first airflow space 230a may be opposite to the same heating region 320a, and similarly, the outer airflow channel 2302 of each first airflow space 230a may also be opposite to the same heating region 320a.

[0087] Specifically, such as Figure 5 As shown, taking the example of setting two second strip-shaped baffles 235 in each first airflow space 230a, the position of the airflow inlet 236 and the gap between the two second strip-shaped baffles 235 are set accordingly. The arrows indicate the flow direction of the gas entering the gas inlet 236. Part of the gas flows in the inner airflow channel 2301, and the other part of the gas enters the outer airflow channel 2302 through the gap between the two second strip-shaped baffles 235. Then, it flows back to the inner airflow channel 2301 through the gap between the outer airflow channel 2302 and the first strip-shaped baffle 234, and finally flows into the second airflow space 230b through the airflow outlet 237.

[0088] In this embodiment, by setting the second strip-shaped baffle 235, the airflow entering the first airflow space 230a flows sequentially between the inner airflow channel 2301 and the outer airflow channel 2302, which helps to increase the airflow path in the first airflow space 230a, prolong the residence time of the airflow in the first airflow space 230a, and further improve the cooling effect.

[0089] Of course, in other embodiments, the cooling chamber 230 may not be provided with the second strip partition 235, that is, the first airflow space 230a is not divided into the inner airflow channel 2301 and the outer airflow channel 2302.

[0090] In one optional embodiment, a second strip-shaped baffle 235 is disposed within each first airflow space 230a. One end of the second strip-shaped baffle 235 forms a first gap 234a with the first strip-shaped baffle 234, and the other end of the second strip-shaped baffle 235 is connected to the first strip-shaped baffle 234. The airflow inlet 236 is located in the outer airflow channel 2302. Then, the gas entering the first airflow space 230a flows from the outer airflow channel 2302 through the first gap 234a to the inner airflow channel 2301, and then flows into the second airflow space 230b through the airflow outlet 237.

[0091] In another embodiment, reference Figure 5 and Figure 7 As shown, there are multiple second strip-shaped baffles 235, which are spaced apart circumferentially in the medium window 110, with at least two second strip-shaped baffles 235 spaced apart within each first airflow space 230a. (Reference) Figure 5 As shown, a first gap 234a is provided between the first strip-shaped partition 234 and the second strip-shaped partition 235 located in the same first airflow space 230a. The inner airflow channel 2301 and the outer airflow channel 2302 are connected through the first gap 234a, and the inner airflow channel 2301 and the outer airflow channel 2302 are respectively opposite to at least one heating area 320a. Moreover, a second gap 235a is provided between two adjacent second strip-shaped partitions 235 located in the same first airflow space 230a, and the inner airflow channel 2301 is also connected to the outer airflow channel 2302 through the second gap 235a.

[0092] Specifically, the cooling gas entering the inner airflow channel 2301 flows through the inner airflow channel 2301 and then flows out through the airflow outlet 237, while the other part enters the outer airflow channel 2302 through the second gap 235a, flows through the outer airflow channel 2302, and then flows out through the first gap 234a and the airflow outlet 237; or, the cooling gas entering the outer airflow channel 2302 flows through the outer airflow channel 2302 and then flows out through the first gap 234a and the airflow outlet 237, while the other part enters the inner airflow channel 2301 through the second gap 235a, flows through the inner airflow channel 2301, and then flows out through the airflow outlet 237.

[0093] In this embodiment, multiple second strip-shaped baffles 235 are provided in each first airflow space 230a, which can further divert the airflow flowing into the first airflow space 230a in the circumferential direction of the medium window 110, so that the airflow of the cooling gas is divided into at least two streams that circulate simultaneously. The flow area of ​​each airflow is further reduced, which is more conducive to improving the temperature uniformity of the medium window 110 in the circumferential direction.

[0094] Optionally, two second strip partitions 235 are provided between two adjacent first strip partitions 234, and a first gap 234a is formed between each of the two second strip partitions 235 in each first airflow space 230a and its adjacent first strip partition 234.

[0095] With this configuration, the airflow inlet 236, the second gap 235a, the external airflow channel 2302, and the first gap 234a are sequentially connected. Since the second gap 235a is located in the middle of the external airflow channel 2302, the airflow entering through the airflow inlet 236 will not only be split into the internal airflow channel 2301 and the external airflow channel 2302, but the airflow flowing into the external airflow channel 2302 through the second gap 235a will also be further split, with the two split airflows flowing in opposite directions (see reference). Figure 5 (The direction indicated by the middle arrow).

[0096] In a further embodiment, the top wall 231 is provided with a plurality of airflow inlets 236, each airflow inlet 236 being opposite to and communicating with a respective internal airflow channel 2301. Optionally, refer to Figure 5 As shown, in the radial direction of the cooling chamber 230, the position of the airflow inlet 236 is opposite to the second gap 235a.

[0097] In this embodiment, the airflow entering through the airflow inlet 236 is split within the inner airflow channel 2301. Part of the airflow flows within the inner airflow channel 2301, while the other part flows within the outer airflow channel 2302. This part of the airflow stays in the first airflow space 230a for a longer time, which is beneficial to improving the heat dissipation effect of the medium window 110.

[0098] Of course, in other embodiments, each airflow inlet 236 may be opposite to and connected to each external airflow channel 2302.

[0099] In an optional embodiment, refer to Figure 5 As shown, the inner sidewall 232 is provided with a plurality of airflow outlets 237 at intervals, and each inner airflow channel 2301 is connected to at least one airflow outlet 237. Optionally, each inner airflow channel 2301 is simultaneously opposite to and connected to at least two airflow outlets 237. In this embodiment, each inner airflow channel 2301 is simultaneously opposite to and connected to two airflow outlets 237. Moreover, the cooling chamber 230 has a plane of symmetry, which is perpendicular to the upper surface of the medium window 110. The airflow inlet 236, the airflow outlet 237, the first strip partition 234, and the second strip partition 235 are symmetrically distributed about the plane of symmetry.

[0100] Optionally, the number of airflow inlets 236, airflow outlets 237, first strip baffles 234, and second strip baffles 235 are all even. The plane of symmetry can be the plane where the two first strip baffles 234 are located in the radial direction of the cooling chamber 230, or it can be the plane where the center line connecting the two airflow inlets 236 are located in the radial direction of the cooling chamber 230.

[0101] In this embodiment, the cooling chamber 230 adopts a symmetrical structure, which is conducive to making the airflow circulation in each first airflow space 230a more similar, so that the heat dissipation effect of each first airflow space 230a on the medium window 110 is more similar, which is conducive to improving the temperature uniformity of the medium window 110.

[0102] Of course, in other embodiments, the airflow inlet 236, airflow outlet 237, first strip partition 234, and second strip partition 235 may not adopt a symmetrical distribution structure.

[0103] It should be noted that, Figure 6 for Figure 5 The structure obtained by sectioning the structure along the first sectioning direction, and the first sectioning direction passes through... Figure 5 The center of the two opposing airflow inlets 236, and the first cross-sectional direction is perpendicular to the upper surface of the medium window 110.

[0104] In this embodiment, the cooling chamber 230 has a centerline. To ensure the strength of the cooling chamber 230, the distance between the arc-shaped centerline of the inner wall 232 and the centerline of the cooling chamber 230 is 150mm-250mm. The radial distance between the second strip-shaped baffle and the inner wall 232 (i.e., the width of the inner airflow channel 2301) is 80mm-120mm. The distance between the arc-shaped centerline of the second strip-shaped baffle and the centerline of the cooling chamber 230 is 350mm-420mm. The radial distance between the second strip-shaped baffle and the outer wall 233 (i.e., the width of the outer airflow channel 2302) is 80mm-120mm. Of course, the parameters can also be adjusted according to the shape of the coil 440 to ensure that the inner airflow channel 2301 of the cooling chamber 230 corresponds to the plasma region 600.

[0105] The height of the cooling chamber 230 is 10mm-40mm, and the thickness of the top wall 231 is 5mm-20mm, ensuring that the top wall 231 has greater strength and preventing thermal deformation; the height of the first airflow space 230a is 5mm-20mm, to avoid its height being too large, which would slow down the airflow and reduce the cooling and heat dissipation capacity, and also to avoid its height being too small, which would increase the resistance and reduce the airflow.

[0106] The widths of the inner wall 232, the outer wall 233, and the first strip-shaped partition 234 are 5mm-25mm, and the width of the second strip-shaped partition 235 is 15mm-50mm. This arrangement helps to improve the strength of the cooling chamber 230, prevent thermal deformation, and thus avoid air leakage due to gaps between the cooling chamber 230 and the medium window 110, thereby preventing a reduction in cooling efficiency and temperature uniformity.

[0107] In the scheme of this application, reference is made to Figures 6-8 As shown, the upper surface of the medium window 110 is provided with a strip groove 110a. Optionally, the upper layer 111 of the medium window has a strip groove 110a. The strip groove 110a extends circumferentially along the medium window 110, that is, the strip groove 110a is an arc-shaped groove. The strip groove 110a is opposite to and communicates with the inner airflow channel 2301, and the strip groove 110a is opposite to and communicates with the inner airflow channel 2301 of the same first airflow space 230a. Optionally, the heating element 320 is disposed inside the medium window 110, so it does not affect the provision of the strip groove 110a on the upper surface of the medium window 110.

[0108] In embodiments where there are multiple first airflow spaces 230a, the cross-sectional shape of the strip groove 110a along the radial direction of the medium window 110 can be a square structure or other shapes. This application embodiment does not limit the length and shape of the strip groove 110a, but ensures that the same strip groove 110a is only connected to the inner airflow channel 2301 of the same first airflow space 230a, so as to avoid airflow mixing caused by connecting to different first airflow spaces 230a. In addition, the strip groove 110a needs to avoid the temperature measurement mounting hole and the heating feed hole 110d mentioned above.

[0109] In this embodiment, by creating a strip groove 110a on the upper surface of the medium window 110, the contact area between the airflow in the first airflow space 230a and the upper surface of the medium window 110 is increased, thereby increasing the heat exchange area and improving the cooling and heat dissipation effects. Furthermore, the plasma concentration is higher in the region below the medium window 110 corresponding to the inner airflow channel 2301 of the cooling chamber 230, and the temperature of the region opposite the medium window 110 and the inner airflow channel 2301 is also higher. Therefore, the strip groove 110a, facing the inner airflow channel 2301, increases the contact area between the airflow and the higher-temperature region of the medium window 110, which more effectively improves the heat exchange effect and further enhances the cooling and heat dissipation effects.

[0110] Of course, in other embodiments, the upper surface of the medium window 110 may not have a strip groove 110a, that is, the upper surface of the medium window 110 is a plane.

[0111] In one alternative embodiment, only one strip groove 110a is formed on the upper surface of the medium window 110 in the radial direction.

[0112] In another embodiment, reference Figure 7 and Figure 8 As shown, there are multiple strip grooves 110a, which are arranged radially at intervals along the medium window 110. Optionally, the multiple strip grooves 110a are respectively opposite to and connected to the same internal airflow channel 2301. In a further embodiment where there are multiple first airflow spaces 230a, multiple strip grooves 110a can be arranged at intervals in the circumferential direction of the medium window 110, so that each internal airflow channel 2301 is respectively opposite to and connected to multiple strip grooves 110a. Optionally, the number of strip grooves 110a opened in the area corresponding to each internal airflow channel 2301 is equal, and the spacing between any two adjacent strip grooves 110a is equal.

[0113] In this embodiment, the number of strip grooves 110a is increased, and the contact area between the airflow in each internal airflow channel 2301 and the upper surface of the medium window 110 is further increased, which further increases the heat exchange area and is conducive to further improving the cooling effect and heat dissipation effect.

[0114] In this embodiment, 2-10 strip grooves 110a are opened in the area corresponding to the internal airflow channel 2301 of each first airflow space 230a. The width of each strip groove 110a is 2mm-15mm and the depth of each strip groove 110a is 2mm-10mm.

[0115] In one alternative embodiment, reference is made to... Figure 8 As shown, the portion of the medium window 110 located between two adjacent strip grooves 110a is a ridge 110b. The ridge 110b has multiple slots 1101 spaced apart along its extension direction. Moreover, the dimension of the slot 1101 in the extension direction of the ridge 110b is smaller than the dimension of the ridge 110b in the radial direction of the medium window 110. That is, the width of the slot 1101 is smaller than the width of the ridge 110b. The width of the ridge 110b can be 5mm-10mm. Optionally, the slot 1101 is connected to two adjacent strip slots 110a, so that the depth of the slot 1101 is maximized. That is, the same convex strip 110b forms multiple protrusions 110e by opening the slot 1101. Further, optionally, the embodiment of this application does not limit the shape of the slot 1101. The formed protrusions 110e can be prism-shaped or cylindrical. The slot 1101 can be opened for each convex strip 110b separately, or the slot 1101 can be opened for only some of the convex strips 110b.

[0116] In this embodiment, based on the strip groove 110a provided in the medium window 110, a slot 1101 is further opened to increase the exposed area of ​​the protrusion 110b. As a result, the contact area between the medium window 110 and the first airflow space 230a is further increased, which further increases the heat exchange area and is conducive to further improving the cooling and heat dissipation effects.

[0117] In another embodiment, reference Figure 8 As shown, the portion of the medium window 110 located between two adjacent strip grooves 110a is a raised strip 110b, which has a curved structure. Optionally, the raised strip 110b can have a regular curved structure; more preferably, the curve can be a wavy line or a sine curve, etc.; or, the raised strip 110b can have an irregular curved structure. It should be noted that the plane containing the raised strip 110b is still parallel to the upper surface of the medium window 110, and the maximum amplitude of the curve is less than twice the width of the strip groove 110a.

[0118] In this embodiment, based on the setting of the strip groove 110a, the shape of the convex strip 110b is changed so that the center line of the strip groove 110a is superimposed with the curve shape, which can increase the disturbance of the turbulent flow field, improve the heat transfer coefficient, thereby improving the heat transfer efficiency and enhancing the cooling and heat dissipation effects.

[0119] Of course, the surface of the medium window 110 can be Figure 8 The structure shown can be configured such that only the strip groove 110a is provided in the medium window 110, or only the slot 1101 is provided in the medium window 110 based on the strip groove 110a, or only the convex strip 110b is set as a curved structure in the medium window 110 based on the strip groove 110a. The medium window 110 can adopt one of the above embodiments or at least a combination of two embodiments.

[0120] Based on the semiconductor process chamber disclosed in this application, embodiments of this application also disclose a semiconductor process apparatus, which includes the semiconductor process chamber in the above embodiments.

[0121] In this embodiment, the semiconductor process chamber of the semiconductor process equipment dissipates heat to different areas of the dielectric window 110 through the cooling chamber 230. This increases the heat dissipation area of ​​the dielectric window 110, improving the cooling effect of the cooling device 200 and the heat dissipation effect of the dielectric window 110. Optionally, the semiconductor process equipment also includes the radio frequency device 400 mentioned above.

[0122] In summary, using the semiconductor process equipment described in this application embodiment, under the condition that the RF power of the upper electrode is 4 kW, the temperature distribution diagram of the upper surface of the dielectric window 110 is shown below. Figure 9 As shown in the figure, when the preset temperature is controlled at 105℃, the temperature range of the upper surface of the medium window 110 is 103℃-109℃, and the temperature is controllable; the temperature is 5.8℃, the temperature difference is small, and the temperature uniformity is greatly improved. Additionally, refer to... Figure 9 As shown, when the RF power is turned on or off, the temperature fluctuation range of the upper surface of the dielectric window 110 is less than 1℃, the temperature control accuracy is high, and stable temperature control is achieved.

[0123] Based on the semiconductor process equipment disclosed in this application, this application embodiment also provides a temperature control method for a dielectric window, applied to the aforementioned semiconductor process equipment. The semiconductor process equipment further includes a temperature control device 300, which includes a temperature detection element 310 and a heating element 320. The temperature detection element 310 is used to detect the temperature of the dielectric window 110, and the heating element 320 is used to adjust the heating state according to the temperature detected by the temperature detection element 310, so that the temperature of the dielectric window 110 is maintained at a preset temperature.

[0124] refer to Figure 11 As shown, the temperature control method for the medium window includes:

[0125] S100. Determine the preset temperature. Different types of semiconductor process equipment have different operating temperatures. Some equipment operates at 100℃, some at 110℃, and some at 120℃. The temperature that the dielectric window 110 needs to maintain is consistent with the operating temperature of the equipment. Therefore, the preset temperature of the dielectric window 110 is determined first according to the type of equipment.

[0126] S200: Adjusts the flow rate of cooling gas according to the preset temperature and radio frequency power.

[0127] S300, Detect the temperature of the medium window 110. Specifically, the temperature of the medium window 110 corresponding to each heating zone 320a is detected using the temperature sensing element 310.

[0128] S400: If the detected temperature is lower than the preset temperature, increase the heating power of the heating element 320; if the detected temperature is higher than the preset temperature, decrease the heating power of the heating element 320.

[0129] Optionally, the temperature controller 340 controls the heating power of the heating element 320 based on the detected temperature; there are multiple temperature detection elements 310 and heating elements 320, with each temperature detection element 310 corresponding to a heating element 320. Different detection elements are used to detect the temperature of different heating areas 320a of the medium window 110, thereby controlling the temperature of each heating area 320a to be maintained at the preset temperature, achieving accurate temperature control.

[0130] This method adjusts the cooling gas flow rate according to the preset temperature and radio frequency power, ensuring that the air cooling effect of the cooling device 200 matches the desired preset temperature. This avoids excessive or insufficient air cooling, facilitating more precise and stable temperature control. Based on the determined cooling gas flow rate, the heating power is continuously adjusted according to the temperature detected by the medium window 110, allowing for real-time adjustment of the heating effect. This facilitates rapid temperature control and helps maintain the temperature of the upper surface of the medium window 110 stably at the preset temperature even under higher radio frequency power conditions.

[0131] In an optional embodiment, adjusting the flow rate of the cooling gas according to a preset temperature and radio frequency power specifically includes:

[0132] S210. Determine whether the radio frequency device 400 is turned on. The radio frequency device 400 is used to generate radio frequency power, and the status of the radio frequency device 400 can be used to determine whether the radio frequency device is turned on.

[0133] S220. With the RF device 400 in the off state, the RF power is zero, and the dielectric window 110 is in a heat preservation state. Therefore, a significant air cooling process is not required. The cooling gas flow rate is adjusted to the minimum value to minimize the air cooling effect. The minimum cooling gas flow rate can be zero or a flow rate greater than zero.

[0134] S230. When the RF device 400 is in the on state, it means that the RF power is greater than zero and the dielectric window 110 is in the heat dissipation state. It is necessary to increase the air cooling effect. At this time, adjust the flow rate of the cooling gas according to the preset temperature so that the flow rate range of the cooling gas is adapted to the preset temperature.

[0135] Optionally, as described above, the preset temperature can be multiple temperature ranges, including a low temperature range, a medium temperature range, and a high temperature range. The flow rate of the cooling gas is divided into multiple different levels. The low temperature range, the medium temperature range, and the high temperature range each correspond to at least one flow rate level. Depending on which range the preset temperature is in, the flow rate of the cooling gas is adjusted to the corresponding level, which helps to maintain the temperature of the medium window 110 within the corresponding temperature range.

[0136] This temperature control method first determines the cooling gas flow rate based on whether radio frequency power is generated. This avoids a situation where a large cooling gas flow rate when the radio frequency device 400 is not turned on results in significant heat dissipation from the medium window 110, leading to a large temperature difference between the medium window 110 and the preset temperature. Of course, in other embodiments, the flow rate adjustment required when the radio frequency device 400 is off can be disregarded, and the cooling gas flow rate can be adjusted solely based on the preset temperature and the magnitude of the radio frequency power when the radio frequency device is on.

[0137] In a further embodiment, adjusting the flow rate of the cooling gas according to a preset temperature and radio frequency power specifically includes:

[0138] S240. When the radio frequency device is in the on state and the flow range of the cooling gas is compatible with the preset temperature, the flow rate of the cooling gas is further adjusted according to the radio frequency power generated by the radio frequency device so that the flow rate of the cooling gas is compatible with the radio frequency power.

[0139] Optionally, when the flow rate of the cooling gas matches the preset temperature, the flow rate of the cooling gas has been adjusted to the corresponding level, and each level also has a certain flow rate adjustment range. The flow rate of the cooling gas is then further adjusted according to the magnitude of the radio frequency power. Specifically, different radio frequency power values ​​correspond to different flow rate values ​​in each level. The higher the radio frequency power, the higher the adjusted flow rate of the cooling gas; the lower the radio frequency power, the lower the adjusted flow rate of the cooling gas.

[0140] This temperature control method first determines the flow range of the cooling gas based on the preset temperature, and then accurately adjusts the flow value of the cooling gas based on the magnitude of the radio frequency power. It can accurately adjust the flow rate of the cooling gas based on the two variables of preset temperature and radio frequency power, so that the flow rate of the cooling gas is adapted to both the preset temperature and the radio frequency power, which is beneficial for more precise and stable temperature control of the medium window 110.

[0141] Of course, in other embodiments, the flow rate range of the cooling gas can be determined first based on the magnitude of the radio frequency power, and then the flow rate value of the cooling gas can be accurately adjusted according to the preset temperature. Specifically, after determining the preset temperature, it is first determined whether the radio frequency power supply 410 is turned on. If not, the flow rate of the cooling gas is adjusted to the lowest level, and then the difference between the detected temperature and the preset temperature is determined. The program calculates how to adjust the heating power of the heating element 320 according to the difference so that the temperature of the medium window 110 can be quickly stabilized and the difference between the detected temperature and the preset temperature is less than 1°C. If the radio frequency power supply 410 is turned on, it is determined which temperature range the set temperature is in (i.e., one of the low temperature range, medium temperature range, and high temperature range). The flow rate of the compressed air is adjusted to the corresponding level according to the temperature range, and the difference between the detected temperature and the preset temperature is further determined. The program calculates how to adjust the heating power of the heating element 320 according to the difference so that the temperature of the medium window 110 can be quickly stabilized and the difference between the detected temperature and the preset temperature is less than 1°C.

[0142] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process chamber, characterized in that, It includes a chamber body (100), a medium window (110), and a cooling device (200), wherein the medium window (110) is disposed above the chamber body (100). The cooling device (200) includes a cooling chamber (230) disposed on the upper surface of the medium window (110) and extending circumferentially along the medium window (110). The cooling chamber (230) is an annular chamber with an annular region. The annular region of the cooling chamber (230) forms a first airflow space (230a). Cooling gas can be introduced into the first airflow space (230a). The central region enclosed by the annular region forms a second airflow space (230b). The second airflow space (230b) is connected to the first airflow space (230a). The cooling gas enters the first airflow space (230a) and circulates within the first airflow space (230a) before entering the second airflow space (230b) to cool the medium window (110).

2. The semiconductor process chamber according to claim 1, characterized in that, The cooling chamber (230) includes a top wall (231), an inner side wall (232), and an outer side wall (233). The top wall (231), inner side wall (232), and outer side wall (233) are all annular structures. The outer side wall (233) is located around the inner side wall (232). The top wall (231) is connected to both the inner side wall (232) and the outer side wall (233). The inner side wall (232), top wall (231), and outer side wall (233) form the first airflow space (230a), and the inner side wall (232) encloses the second airflow space (230b). The inner wall (232) is provided with an airflow outlet (237), and the first airflow space (230a) is connected to the second airflow space (230b) through the airflow outlet (237).

3. The semiconductor process chamber according to claim 2, characterized in that, The cooling chamber (230) further includes a plurality of first strip partitions (234), which are spaced apart circumferentially along the medium window (110), and each of the first strip partitions (234) extends radially along the medium window (110). The upper surface of two adjacent first strip partitions (234), the inner sidewall (232), the top wall (231), the outer sidewall (233), and the medium window (110) forms a first airflow space (230a). The plurality of first strip partitions (234) divide the internal space of the cooling chamber (230) into a plurality of first airflow spaces (230a).

4. The semiconductor process chamber according to claim 3, characterized in that, The cooling chamber (230) further includes a second strip partition (235) extending circumferentially along the medium window (110). The second strip partition (235) divides each of the first airflow spaces (230a) into an inner airflow channel (2301) and an outer airflow channel (2302). The second strip partition (235) forms the inner airflow channel (2301) between itself and the inner sidewall (232), and the second strip partition (235) forms the outer airflow channel (2302) between itself and the outer sidewall (233). The inner airflow channel (2301) communicates with the outer airflow channel (2302), and the inner airflow channel (2301) communicates with the second airflow space (230b) through the airflow outlet (237).

5. The semiconductor process chamber according to claim 4, characterized in that, There are multiple second strip-shaped partitions (235), which are spaced apart circumferentially in the medium window (110). At least two second strip-shaped partitions (235) are spaced apart in each of the first airflow spaces (230a). A first gap (234a) is provided between the first strip-shaped partition (234) and the second strip-shaped partition (235) located in the same first airflow space (230a). A second gap (235a) is provided between two adjacent second strip-shaped partitions (235) located in the same first airflow space (230a). The inner airflow channel (2301) is connected to the outer airflow channel (2302) through the first gap (234a) and the second gap (235a) respectively.

6. The semiconductor process chamber according to claim 5, characterized in that, The top wall (231) is provided with a plurality of airflow inlets (236), each of the airflow inlets (236) being opposite to and communicating with each of the inner airflow channels (2301). The inner sidewall (232) is provided with a plurality of airflow outlets (237) at intervals, and each of the inner airflow channels (2301) is communicating with at least one of the airflow outlets (237). The cooling chamber (230) has a symmetrical plane, and the airflow inlet (236), the airflow outlet (237), the first strip partition (234) and the second strip partition (235) are symmetrically distributed about the symmetrical plane.

7. The semiconductor process chamber according to claim 4, characterized in that, The upper surface of the medium window (110) is provided with a strip groove (110a), which extends circumferentially along the medium window (110) and is opposite to and connected to the internal airflow channel (2301).

8. The semiconductor process chamber according to claim 7, characterized in that, The number of the strip grooves (110a) is multiple, and the strip grooves (110a) are arranged at radial intervals along the medium window (110).

9. The semiconductor process chamber according to claim 8, characterized in that, The portion of the medium window (110) between two adjacent strips (110a) is a ridge (110b). The ridge (110b) is provided with a plurality of slots (1101) spaced apart along its own extension direction. The size of the slots (1101) in the direction of extension of the ridge (110b) is smaller than the size of the ridge (110b) in the radial direction of the medium window (110).

10. The semiconductor process chamber according to claim 7, characterized in that, The portion of the medium window (110) between two adjacent strip grooves (110a) is a raised strip (110b), which has a curved structure.

11. The semiconductor process chamber according to any one of claims 1-10, characterized in that, The semiconductor process chamber also includes a temperature control device (300), which includes a temperature detection element (310) and a heating element (320) connected in communication. The temperature detection element (310) is disposed in the dielectric window (110) to detect the temperature of the dielectric window (110). The heating element (320) is embedded in the dielectric window (110) and is used to adjust the heating state according to the temperature detected by the temperature detection element (310) so that the temperature of the dielectric window (110) is maintained at a preset temperature.

12. The semiconductor process chamber according to claim 11, characterized in that, The number of temperature sensing elements (310) and heating elements (320) is multiple. The heating area (320a) formed by each heating element (320) extends circumferentially along the medium window (110). Each heating area (320a) is arranged sequentially in the radial direction of the medium window (110). Each first airflow space (230a) and second airflow space (230b) is opposite to at least one heating area (320a), and each heating area (320a) corresponds to at least one temperature sensing element (310).

13. The semiconductor process chamber according to claim 11, characterized in that, The cooling device (200) further includes an air amplifier (210) and an airflow connector (220). The air amplifier (210) is used to introduce compressed gas, and the airflow connector (220) is disposed above the cooling chamber (230). The air amplifier (210), the airflow connector (220), and the first airflow space (230a) are connected in sequence. The temperature control device (300) further includes a flow regulator (330), which is disposed at the inlet end of the air amplifier (210) and is used to adjust the flow rate of the compressed gas according to different preset temperatures.

14. A semiconductor process apparatus, characterized in that, Includes the semiconductor process chamber as described in any one of claims 1-13.

15. A method for temperature control of a dielectric window, applied to the semiconductor process equipment of claim 14, characterized in that, The method includes: Set the preset temperature; The flow rate of the cooling gas is adjusted according to the preset temperature and radio frequency power; Detect the temperature of the medium window (110); When the temperature is lower than the preset temperature, the heating power of the heating element (320) is increased; when the temperature is higher than the preset temperature, the heating power of the heating element (320) is decreased, so that the temperature of the medium window (110) is maintained at the preset temperature.

16. The temperature control method according to claim 15, characterized in that, The adjustment of the cooling gas flow rate according to the preset temperature and radio frequency power specifically includes: Determine whether the radio frequency device (400) is turned on; With the radio frequency device (400) in the off state, the flow rate of the cooling gas is adjusted to the minimum value; When the radio frequency device (400) is in the on state, the flow rate of the cooling gas is adjusted according to the preset temperature so that the flow rate range of the cooling gas is adapted to the preset temperature.

17. The temperature control method according to claim 16, characterized in that, The method of adjusting the flow rate of the cooling gas according to the preset temperature and radio frequency power further includes: When the radio frequency device (400) is in the on state and the flow rate range of the cooling gas is adapted to the preset temperature, the flow rate of the cooling gas is further adjusted according to the radio frequency power generated by the radio frequency device (400) so that the flow rate value of the cooling gas is adapted to the radio frequency power.

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