Radiation and reflection integrated electromagnetic metasurface unit and array thereof

Abstract

The invention discloses a radiation and reflection integrated electromagnetic metasurface unit and an array thereof. The metasurface unit comprises a first dielectric substrate, a second dielectric substrate and a base structure formed by a PP layer located between the first dielectric substrate and the second dielectric substrate. A first metal layer is arranged on the upper surface of the first dielectric substrate, a metal floor layer is arranged between the first dielectric substrate and the PP layer, a second metal layer is arranged between the PP layer and the second dielectric substrate, and a third metal layer is arranged on the lower surface of the second dielectric substrate; by controlling the level of the direct-current bias line, the on-off state of the third PIN diode is further controlled to change the impedance matching state of the microstrip line and the gap, switching of the radiation reflection mode of the unit is achieved, and 2-bit reflection phase control is achieved in the reflection mode. The array comprises radiation and reflection integrated electromagnetic metasurface units which are arranged in an array mode, and each electromagnetic metasurface unit in the array can perform radiation and reflection mode switching by controlling the level of a corresponding direct current bias line so as to realize flexible regulation and control of electromagnetic waves; and the electromagnetic wave control capability can be well realized at 3.5 GHz, and the reflection efficiency is high.

Description

Technical Field

[0001] The invention belongs to the field of antenna technology, and specifically relates to a radiation-reflection integrated electromagnetic metasurface unit and its array. Background Technology

[0002] With the rapid development of wireless communication technology, how to simultaneously achieve integrated control of radiated and reflected electromagnetic waves, and thus improve the quality of non-line-of-sight channels and multi-user coverage in communication scenarios, has become a major challenge in current technological development. Integrated radiation-reflection design is of great significance in this regard. Traditional integrated radiation-reflection designs often employ a discrete component design approach, where radiation and reflection functions are implemented through discrete parts. For example, in most integrated radiation-reflection designs, an electromagnetic metasurface is loaded onto a traditional antenna. The metasurface controls the reflected wave, while the traditional antenna controls the radiated wave, thereby achieving both radiation and reflection functions. While this design can achieve integrated control of radiation and reflection, it struggles to achieve flexible switching control between radiation and reflection, and also suffers from structural complexity and increased size.

[0003] For example, the application with application number 202411203529.3 and publication number CN 118943760 A, entitled "A Low-Scattering Conical Beam Antenna Based on Polarization Conversion Metasurface", achieves an integrated radiation-reflection design by loading a metasurface around the radiating antenna. However, due to the separate design of radiation and reflection functions, it is impossible to achieve flexible control of radiation and reflection functions. Summary of the Invention

[0004] To overcome the problems existing in the prior art, the present invention aims to provide an integrated electromagnetic metasurface unit and its array, in which the antenna unit realizes radiation and reflection functions with only one structure. The unit's radiation mode and reflection mode are switched by controlling the on and off of the PIN diode. In the reflection mode, 2-bit reflection phase control is realized, which has the characteristics of flexible mode switching. It can achieve good electromagnetic wave manipulation capability at 3.5GHz and has high reflection efficiency.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: A radiation-reflection integrated electromagnetic metasurface unit includes a basic structure composed of a first dielectric substrate 10, a second dielectric substrate 12, and a PP layer 11 located between the two. A first metal layer 1 is disposed on the upper surface of the first dielectric substrate 10, a metal ground layer 2 is disposed between the first dielectric substrate 10 and the PP layer 11, a second metal layer 3 is disposed between the PP layer 11 and the second dielectric substrate 12, and a third metal layer 4 is disposed on the lower surface of the second dielectric substrate 12. The first metal layer 1 is connected to the metal ground layer 2 through the first dielectric substrate 10 via a first conductive post 5 located in the middle. A second conductive post 6 and a fourth conductive post 8 are located on both sides of the first conductive post 5 and are on the same straight line as the first conductive post 5. A third conductive post 7 and a fifth conductive post 9 are respectively disposed on both sides of the straight line. The second conductive post 6 and the fourth conductive post 8 penetrate the basic structure, and the third conductive post 7 and the fifth conductive post 9 connect the metal ground layer 2 and the third metal layer 4. The first metal layer 1 includes a polygonal patch 1-1 disposed on the upper surface of the first dielectric substrate. A first rectangular patch 1-2 and a second rectangular patch 1-3 are respectively disposed on opposite sides of the polygonal patch 1-1. The first rectangular patch 1-2 and the polygonal patch 1-1 are connected by a first PIN diode 1-4, and the second rectangular patch 1-3 and the polygonal patch 1-1 are connected by a second PIN diode 1-5.

[0006] The polygonal patch 1-1 is a polygonal shape composed of an isosceles trapezoidal patch and rectangular patches spliced ​​together at the two base sides.

[0007] The centers of the first rectangular patch 1-2 and the second rectangular patch 1-3 are located on the line connecting the midpoints of the two parallel long sides of the polygon patch 1-1.

[0008] The metal floor layer 2 includes a metal floor 2-2, with a gap 2-1 etched in the middle of the metal floor 2-2. A circular groove 2-3 is etched on the line connecting the midpoints of opposite sides of the metal floor 2-2 perpendicular to the gap 2-1, which is used to isolate the second conductive post 6 and the fourth conductive post 8 from the metal floor 2-2.

[0009] The second metal layer 3 includes a first fan-shaped branch 3-1 and a second fan-shaped branch 3-2 symmetrically arranged on the upper surface of the second dielectric substrate 12. The tips of the first fan-shaped branch 3-1 and the second fan-shaped branch 3-2 are respectively connected to the second conductive post 6 and the fourth conductive post 8 for isolating microwave signals.

[0010] The described third metal layer 4 includes a microstrip line 4-1 disposed on one side of the lower surface of the second dielectric substrate 12. The microstrip line 4-1 is in a "mountain" shape, including a main branch 4-9 in the middle and branch segments 4-10 connected in parallel on both sides. One end of the main branch 4-9 is located directly below the gap 2-1 for coupling and transmitting the energy of the gap. The other end is connected to the branch segments 4-10 on both sides. The end of one side branch segment is connected to a short-circuit microstrip branch 4-3 through a third PIN diode 4-4. A third DC bias line 4-8 is connected between the main branch 4-9 and the branch segment 4-10 on this side. The middle of the third DC bias line 4-8 is connected to the tip of a third fan-shaped branch 4-2 for isolating microwave signals. The end of the branch segment 4-10 on the other side is electrically connected to the inner conductor of the RF connector 13, and a third rectangular patch 4-5 is provided around the end of the branch segment 4-10 on this side and is electrically connected to the outer conductor of the RF connector 13. The third metal layer 4 further includes a first DC bias line 4-6 and a second DC bias line 4-7, which are respectively used for DC biasing the first PIN diode 1-4 and the second PIN diode 1-5. The first bias line 4-6 sequentially passes through and is vertically connected to the first fan-shaped branch 3-1 and the first rectangular patch 1-2 through the second conductive column 6. The second bias line 4-7 sequentially passes through and is vertically connected to the second fan-shaped branch 3-2 and the second rectangular patch 1-3 through the fourth conductive column 8.

[0011] By respectively controlling the levels of the first DC bias line 4-6, the second DC bias line 4-7, and the third DC bias line 4-8, the on / off states of the first PIN diode 1-4, the second PIN diode 1-5, and the third PIN diode 4-4 are controlled. Five different encodings correspond to five different on / off states, including the first: the first PIN diode 1-4 is off, the second PIN diode 1-5 is off, and the third PIN diode 4-4 is on; the second: the first PIN diode 1-4 is off, the second PIN diode 1-5 is on, and the third PIN diode 4-4 is on; the third: the first PIN diode 1-4 is on, the second PIN diode 1-5 is off, and the third PIN diode 4-4 is on; the fourth: the first PIN diode 1-4 is on, the second PIN diode 1-5 is on, and the third PIN diode 4-4 is on; the fifth: the first PIN diode 1-4 is on, the second PIN diode 1-5 is off, and the third PIN diode 4-4 is off.

[0012] By controlling the on / off state of the third PIN diode 4-4, the impedance matching state between microstrip line 4-1 and slot 2-1 is changed, thereby achieving the switching between unit reflection mode and radiation mode: when the third PIN diode 4-4 is on, the impedance of microstrip line 4-1 and slot 2-1 is mismatched, and the energy received on the patch cannot be coupled to microstrip line 4-1 through slot 2-1 for transmission, thus causing reflection; when the third PIN diode 4-4 is off, the matching is good, and the energy can be effectively transmitted to the antenna for radiation.

[0013] The center of the polygonal patch 1-1 is connected to the metal ground plane 2-2 through the first conductive post 5; the end of the short-circuit microstrip stub 4-3 is connected to the metal ground plane 2-2 through the third conductive post 7; and the third rectangular patch 4-5 is connected to the metal ground plane 2-2 through the fifth conductive post 9.

[0014] The first dielectric plate 10 and the second dielectric plate 12 are made of F4B material; the PP layer 11 is made of Rogers RO4003 material.

[0015] A radiation-reflection integrated electromagnetic metasurface array includes radiation-reflection integrated electromagnetic metasurface units arranged in an array. Each electromagnetic metasurface unit in the array can switch between radiation-reflection modes by controlling the level of the corresponding DC bias line, thereby achieving flexible control of electromagnetic waves.

[0016] Compared with existing structures, the beneficial effects of the present invention are: The antenna disclosed in this invention achieves radiation and reflection functions with only one structure and has the feature of switching between radiation and reflection modes. By controlling the on / off state of the third PIN diode 4-4, the impedance matching state between the microstrip line 4-1 and the slot 2-1 can be changed, thereby realizing the switching between unit reflection mode and radiation mode. The mode switching is flexible.

[0017] The antenna disclosed in this invention can achieve four reflection phase states at a frequency of 3.5 GHz in reflection mode, and the reflection amplitude response of all four states is less than -2 dB. The phase response meets the performance requirement of 90 ° phase difference and has the feature of 2-bit phase adjustment. Compared with the 1-bit metasurface unit structure, the antenna disclosed in this invention has a smaller phase quantization error. In radiation mode, the reflection coefficient is -22.884 dB at a frequency of 3.5 GHz.

[0018] In this invention, each electromagnetic metasurface unit in the integrated radiation-reflection electromagnetic metasurface array can switch between radiation and reflection modes by controlling the level of the corresponding DC bias line, thereby achieving flexible control of electromagnetic waves.

[0019] In summary, this invention achieves radiation and reflection functions with only one structure, switches between unit radiation and reflection modes by controlling the on / off state of the PIN diode, and achieves 2-bit reflection phase control in reflection mode. It can achieve good electromagnetic wave manipulation capability at 3.5GHz and has high reflection efficiency. Attached Figure Description

[0020] Figure 1 This is a three-dimensional structural schematic diagram of the integrated electromagnetic metasurface unit of the present invention; Figure 2 This is a schematic diagram of the structure of the first metal layer 1 of the integrated electromagnetic metasurface unit of the present invention; Figure 3 This is a schematic diagram of the metal floor layer 2 structure of the integrated electromagnetic metasurface unit of the present invention; Figure 4 This is a schematic diagram of the second metal layer 3 of the integrated electromagnetic metasurface unit of the present invention; Figure 5 This is a schematic diagram of the third metal layer 4 of the integrated electromagnetic metasurface unit of the present invention; Figure 6 This is the reflection coefficient amplitude curve of the integrated electromagnetic metasurface unit in the reflection mode of Embodiment 1 of the present invention.

[0021] Figure 7 This is the reflection coefficient phase curve of the integrated electromagnetic metasurface unit in the reflection mode of Embodiment 1 of the present invention.

[0022] Figure 8 This is the S-parameter amplitude curve of the radiation mode of the integrated electromagnetic metasurface unit in Embodiment 1 of the present invention.

[0023] Figure 9 This is a schematic diagram of the integrated electromagnetic metasurface array of the present invention.

[0024] In the diagram, 1. First metal layer; 2. Metal ground layer; 3. Second metal layer; 4. Third metal layer; 5. First conductive pillar; 6. Second conductive pillar; 7. Third conductive pillar; 8. Fourth conductive pillar; 9. Fifth conductive pillar; 10. First dielectric substrate; 11. PP layer; 12. Second dielectric substrate; 13. RF connector; 1-1. Polygonal patch; 1-2. First rectangular patch; 1-3. Second rectangular patch; 1-4, First PIN diode; 1-5, Second PIN diode; 2-1, Gap; 2-2, Metal ground plane; 2-3, Circular groove; 3-1, First fan-shaped branch; 3-2, Second fan-shaped branch; 4-1, Microstrip line; 4-2, Third fan-shaped branch; 4-3, Short-circuited microstrip branch; 4-4, Third PIN diode; 4-5, Third rectangular patch; 4-6, First bias line; 4-7, Second bias line; 4-8, Third bias line; 4-9, Main branch; 4-10, Branch. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the specific embodiments described are only for explaining the invention and are not intended to limit the invention.

[0026] Example 1 like Figure 1 As shown, the integrated electromagnetic metasurface unit, from top to bottom, includes a first metal layer 1, a first dielectric substrate 10, a metal ground layer 2, a PP layer 11, a second metal layer 3, a second dielectric substrate 12, and a third metal layer 4.

[0027] like Figure 2 As shown, the first metal layer 1 includes a polygonal patch 1-1, a first rectangular patch 1-2, a second rectangular patch 1-3, a first PIN diode 1-4, and a second PIN diode 1-5. Specifically, the first rectangular patch 1-2 is connected to the polygonal patch 1-1 via the first PIN diode 1-4, and the second rectangular patch 1-3 is connected to the polygonal patch 1-1 via the second PIN diode 1-5. The centers of the first rectangular patch 1-2 and the second rectangular patch 1-3 are located on the line connecting the midpoints of two sides of the polygonal patch 1-1.

[0028] like Figure 3 As shown, the metal floor layer 2 includes a metal floor 2-2, a gap 2-1 and a circular groove 2-3. The gap 2-1 is etched in the center of the metal floor 2-2, and the circular groove 2-3 is etched on the midpoint connecting line on both sides of the metal floor 2-2, which is used to isolate the conductive posts 6 and 8 from the floor.

[0029] like Figure 4As shown, the second metal layer 3 includes a first fan-shaped branch 3-1 and a second fan-shaped branch 3-2, which are used to reduce the mutual influence between the radio frequency signal and the low-frequency control signal.

[0030] like Figure 5 As shown, the fourth metal layer 4 includes a microstrip line 4-1, a third fan-shaped stub 4-2, a short-circuited microstrip stub 4-3, a third PIN diode 4-4, a third rectangular patch 4-5, a first DC bias line 4-6, a second DC bias line 4-7, and a third DC bias line 4-8. The microstrip line 4-1 and the short-circuited microstrip stub 4-3 are connected via the third PIN diode 4-4. By controlling the on / off state of the third PIN diode 4-4, the impedance matching state between the microstrip line 4-1 and the slot 2-1 can be changed, thereby achieving the switching between the unit's reflection mode and radiation mode. When the third PIN diode 4-4 is off, the impedance of the microstrip line 4-1 and the slot 2-1 is mismatched, and the energy received on the patch cannot be coupled to the microstrip line 4-1 through the slot 2-1 for transmission, resulting in reflection. When the third PIN diode 4-4 is off, the matching is good, and the energy can be effectively transmitted to the antenna for radiation.

[0031] The center of the polygonal patch 1-1 is connected to the metal ground plane 2-2 through the first conductive post 5; the end of the short-circuited microstrip stub 4-3 is connected to the metal ground plane 2-2 through the third conductive post 7; the third rectangular patch 4-5 is connected to the metal ground plane 2-2 through the fifth conductive post 9; the end of the microstrip line 4-1 and the third rectangular patch 4-5 are respectively connected to the inner and outer conductors of the RF connector 13.

[0032] refer to Figures 1-5 The second conductive post 6 extends vertically from the first rectangular patch 1-2 to the bottom of the base structure, connecting with the first fan-shaped branch 3-1 and the first bias line 4-6, but not with the metal floor 2-2; the fourth conductive post 8 extends vertically from the second rectangular patch 1-3 to the bottom of the base structure, connecting with the second fan-shaped branch 3-2 and the second bias line 4-7, but not with the metal floor 2-2; the third bias line 4-8 connects with the third fan-shaped branch 4-2 and the microstrip line 4-1.

[0033] Specifically, the on / off states of PIN diodes 1-4, 1-5, and 4-4 can be controlled by adjusting the voltage levels of bias lines 4-6, 4-7, and 4-8. "001" corresponds to PIN diode 1-4 being off, PIN diode 1-5 being off, and PIN diode 4-4 being on. "011" corresponds to PIN diode 1-4 being off, PIN diode 1-5 being on, and PIN diode 4-4 being on. "101" corresponds to PIN diode 1-4 being on, PIN diode 1-5 being off, and PIN diode 4-4 being on. "111" corresponds to PIN diode 1-4 being on, PIN diode 1-5 being on, and PIN diode 4-4 being on. "100" corresponds to PIN diode 1-4 being on, PIN diode 1-5 being off, and PIN diode 4-4 being off.

[0034] In this embodiment, the first dielectric plate 10 and the second dielectric plate 12 are F4B boards with thicknesses of 3.2 mm and 0.4 mm, respectively; the PP layer 11 is Rogers RO4003 board with a thickness of 0.203 mm.

[0035] When the third PIN diode 4-4 is turned on, the unit operates in reflection mode. Four states with a phase difference of approximately 90° are achieved by controlling the on / off states of PIN diodes 1-4 and 1-5. Simulations of the electromagnetic metasurface unit are performed, and the simulation results are as follows: Figure 6 , Figure 7 As shown. By Figure 6 Simulation results show that the reflection amplitude response at 3.5 GHz is greater than 2dB, by Figure 7 The simulation results show that the phase value at the 3.5GHz frequency point is -134.8°. The values ​​of 52.8°, 34.3°, and 115.4° meet the performance requirement of a 90° phase difference, indicating that the above-mentioned integrated electromagnetic metasurface unit can achieve good electromagnetic wave manipulation capability and has high reflection efficiency at 3.5 GHz in reflection mode.

[0036] In state "100", the element operates in radiation mode, and the simulation results are as follows: Figure 8 As shown. By Figure 8 The simulation results show that, under radiation mode, the reflection coefficient |S11| of the element at the 3.5 GHz frequency point is -22.884 dB.

[0037] Example 2 See Figure 9A radiation-reflection integrated electromagnetic metasurface array includes radiation-reflection integrated electromagnetic metasurface units arranged in an array. Each electromagnetic metasurface unit in the array can switch between radiation-reflection modes by controlling the level of the corresponding DC bias line, thereby achieving flexible control of electromagnetic waves.

[0038] In the description of this invention, it should be noted that the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this invention is usually placed when in use, or the orientation or positional relationship in which those skilled in the art would conventionally understand. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

Claims

1. A radiation-reflection integrated electromagnetic metasurface unit, comprising a basic structure consisting of a first dielectric substrate (10), a second dielectric substrate (12), and a PP layer (11) located between the two; characterized in that, The first dielectric substrate (10) has a first metal layer (1) on its upper surface, a metal floor layer (2) between the first dielectric substrate (10) and the PP layer (11), a second metal layer (3) between the PP layer (11) and the second dielectric substrate (12), and a third metal layer (4) on its lower surface. The first metal layer (1) is connected to the metal floor layer (2) through a first conductive post (5) located in the middle of it. The second conductive post (6) and the fourth conductive post (8) are located on both sides of the first conductive post (5) and are on the same straight line as the first conductive post (5). The third conductive post (7) and the fifth conductive post (9) are respectively provided on both sides of the straight line. The second conductive post (6) and the fourth conductive post (8) penetrate the basic structure. The third conductive post (7) and the fifth conductive post (9) connect the metal floor layer (2) and the third metal layer (4).

2. The integrated electromagnetic metasurface unit according to claim 1, characterized in that, The first metal layer (1) includes a polygonal patch (1-1) disposed on the upper surface of the first dielectric substrate. A first rectangular patch (1-2) and a second rectangular patch (1-3) are respectively disposed on opposite sides of the polygonal patch (1-1). The first rectangular patch (1-2) and the polygonal patch (1-1) are connected by a first PIN diode (1-4), and the second rectangular patch (1-3) and the polygonal patch (1-1) are connected by a second PIN diode (1-5). The centers of the first rectangular patch (1-2) and the second rectangular patch (1-3) are located on the line connecting the midpoints of the two parallel long sides of the polygonal patch (1-1).

3. The integrated electromagnetic metasurface unit according to claim 2, characterized in that, The polygonal patch (1-1) is a polygonal shape composed of an isosceles trapezoidal patch and rectangular patches spliced ​​at the two base sides.

4. The integrated electromagnetic metasurface unit according to claim 1, characterized in that, The metal floor layer (2) includes a metal floor (2-2), a gap (2-1) is etched in the middle of the metal floor (2-2), and a circular groove (2-3) is etched on the line connecting the midpoints of opposite sides of the metal floor (2-2) perpendicular to the gap (2-1), which is used to isolate the second conductive post (6) and the fourth conductive post (8) from the metal floor (2-2).

5. The integrated electromagnetic metasurface unit according to claim 1, characterized in that, The second metal layer (3) includes a first fan-shaped branch (3-1) and a second fan-shaped branch (3-2) symmetrically arranged on the upper surface of the second dielectric substrate (12). The tips of the first fan-shaped branch (3-1) and the second fan-shaped branch (3-2) are respectively connected to the second conductive post (6) and the fourth conductive post (8) to isolate microwave signals.

6. The integrated electromagnetic metasurface unit according to claim 1, characterized in that, The third metal layer (4) includes a microstrip line (4-1) disposed on one side of the lower surface of the second dielectric substrate (12). The microstrip line (4-1) is shaped like a "mountain" and includes a main branch (4-9) in the middle and two parallel branches (4-10) on both sides. One end of the main branch (4-9) is located directly below the gap (2-1) and is used for energy transmission via gap coupling. The other end is connected to the two branches (4-10). The end of one branch is connected to the short-circuited microstrip branch (4-3) through a third PIN diode (4-4). The main branch (4-9) and the branch (4-10) on this side are connected in the middle by a third DC bias line (4-8). The middle of the third DC bias line (4-8) is connected to the tip of the third fan-shaped branch (4-2) for isolating microwave signals. The end of the branch section (4-10) on the other side is electrically connected to the inner conductor of the radio frequency connector (13), and a third rectangular patch (4-5) is provided around the end of the branch section (4-10) on this side and electrically connected to the outer conductor of the radio frequency connector (13); the third metal layer (4) also includes a first DC bias line (4-6) and a second DC bias line (4-7), which are used to DC bias the first PIN diode (1-4) and the second PIN diode (1-5) respectively; the first bias line (4-6) passes through the second conductive post (6) and vertically connects the first fan branch section (3-1) and the first rectangular patch (1-2) in sequence; the second bias line (4-7) passes through the fourth conductive post (8) and vertically connects the second fan branch section (3-2) and the second rectangular patch (1-3) in sequence.

7. The integrated electromagnetic metasurface unit according to claim 1, characterized in that, By controlling the levels of the first DC bias line (4-6), the second DC bias line (4-7), and the third DC bias line (4-8) respectively, the first PIN diode (1-4), the second PIN diode (1-5), and the third PIN diode (4-4) are switched on and off. Five different codes correspond to five different on / off states, including the first state: the first PIN diode (1-4) is off, the second PIN diode (1-5) is off, and the third PIN diode (4-4) is on; the second state: the first PIN diode (1-4) is off. The first type is: the first PIN diode (1-4) is on, the second PIN diode (1-5) is off, and the third PIN diode (4-4) is on. The second type is: the first PIN diode (1-4) is on, the second PIN diode (1-5) is off, and the third PIN diode (4-4) is on. The third type is: the first PIN diode (1-4) is on, the second PIN diode (1-5) is on, and the third PIN diode (4-4) is on. The fourth type is: the first PIN diode (1-4) is on, the second PIN diode (1-5) is off, and the third PIN diode (4-4) is off.

8. The integrated electromagnetic metasurface unit according to claim 7, characterized in that, By controlling the on / off state of the third PIN diode (4-4), the impedance matching state between the microstrip line (4-1) and the slot (2-1) is changed, thereby achieving the switching between the unit reflection mode and the radiation mode: when the third PIN diode (4-4) is on, the impedance of the microstrip line (4-1) and the slot (2-1) is mismatched, and the energy received on the patch cannot be coupled to the microstrip line (4-1) through the slot (2-1) for transmission, thus causing reflection; when the third PIN diode (4-4) is off, the matching is good, and the energy can be effectively transmitted to the antenna for radiation.

9. The integrated electromagnetic metasurface unit according to claim 2, characterized in that, The center of the polygonal patch (1-1) is connected to the metal ground plane (2-2) through the first conductive post (5); the end of the short-circuit microstrip stub (4-3) is connected to the metal ground plane (2-2) through the third conductive post (7); the third rectangular patch (4-5) is connected to the metal ground plane (2-2) through the fifth conductive post (9).

10. A radiation-reflection integrated electromagnetic metasurface array, comprising radiation-reflection integrated electromagnetic metasurface units arranged in an array, characterized in that, Each electromagnetic metasurface unit in the array can switch between radiation and reflection modes by controlling the level of the corresponding DC bias line, thereby achieving flexible control of electromagnetic waves.

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