Method for preparing thin-film solar cell by using mask and thin-film solar cell
By replacing laser etching with mask technology, the fabrication process of perovskite thin-film solar cells is simplified, costs are reduced, and damage is avoided. This method is also suitable for the manufacture of flexible solar cells.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-02
- Publication Date
- 2026-03-13
AI Technical Summary
The existing laser etching process for perovskite thin-film solar cells results in high equipment costs, cumbersome process flow, and film layer damage, which affects cell efficiency.
By using masking technology to replace laser etching, and by setting multiple layers of scribing positions and covering them with masks on the substrate, the connection between each layer structure is gradually broken, and thin-film solar cells are fabricated.
It reduces production costs, simplifies the process, and avoids damage caused by laser etching, making it suitable for the fabrication of flexible solar cells.
Smart Images
Figure CN121665728A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of thin-film solar cell technology, and more particularly to a method for preparing thin-film solar cells using a mask and the thin-film solar cell itself. Background Technology
[0002] Existing perovskite and other thin-film solar cells all employ laser etching technology. Series-parallel connections of sub-cells are achieved through laser etching from P1 to P4, thus enabling the fabrication of large-area solar cell modules. Furthermore, this process requires more than three laser etching steps, resulting in high equipment costs and a complex process flow. Additionally, laser etching is susceptible to defects such as cratering, internal cracks, over-etching, and etching residues, which can damage the solar cell film and lead to efficiency losses in the solar cell device.
[0003] How to solve the above-mentioned technical problems has become an urgent technical challenge for the industry. Summary of the Invention
[0004] To address the shortcomings of existing technologies, the present invention aims to provide a method for fabricating thin-film solar cells using a mask and a thin-film solar cell. The mask technology solution replaces the existing laser etching, reducing production costs while avoiding the process damage caused by laser etching.
[0005] To achieve the above objectives, this application provides a method for fabricating thin-film solar cells using a mask, comprising: A scribing position P1 is set on the upper surface of the substrate, and a scribing position mask covers the scribing position P1. The width of the P1 scribing mask matches the width of the P1 scribing area. An ITO layer is formed on the upper surface of the substrate; The ITO layer is disconnected at the line marked on P1; Remove the mask from the P1 scribing area; Both P2 and P3 scribing positions are set on the side of the ITO layer facing away from the substrate, or P2 scribing position is set separately on the side of the ITO layer facing away from the substrate. When P2 and P3 scribing positions are simultaneously set on the side of the ITO layer facing away from the substrate, the P2 scribing position mask covers the P2 scribing position, and the P3 scribing position mask covers the P3 scribing position. A functional layer is disposed on the side of the ITO layer facing away from the substrate; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at both the P2 and P3 dash positions; Remove the mask at the P2 scribing position; A metal electrode layer is provided on the side of the functional layer facing away from the substrate, and the metal electrode layer is disconnected by the P3 scribing position mask at the P3 scribing position. Remove the mask from the P3 scribing area; When a P2 scribing position is set separately on the side of the ITO layer facing away from the substrate, the P2 scribing position mask covers the P2 scribing position. A functional layer is disposed on the side of the ITO layer facing away from the substrate; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at the P2 mark. Remove the mask at the P2 scribing position; A P3 scribing position is set on the side of the functional layer facing away from the substrate, which is not the P2 scribing position, and the P3 scribing position is covered by a mask. A metal electrode layer is provided on the side of the functional layer facing away from the substrate, and the metal electrode layer is disconnected by the P3 scribing position mask at the P3 scribing position. Remove the mask from the P3 scribing area.
[0006] Preferably, the thickness of the P1 scribing mask is not less than the thickness of the ITO layer.
[0007] Preferably, the P2 and P3 scribing positions are arranged in parallel.
[0008] Preferably, the P3 line mark is located on the side of the P2 line mark facing away from the P1 line mark.
[0009] Preferably, the metal electrode layer extends downward along the scribed line P2 to connect with the ITO layer.
[0010] Preferably, when the gap between the scribe point P2 and the scribe point P3 is greater than zero, the scribe point P2 mask includes: a first blocking strip and a second blocking strip; The first masking strip corresponds to the line position P2, and the second masking strip corresponds to the line position P3; The thickness of both the first and second shielding strips is not less than the sum of the heights of the hole transport layer, the perovskite layer, and the electron transport layer.
[0011] Preferably, when the P2 scribing mask includes a first blocking strip and a second blocking strip, the P2 scribing mask is removed after the electron transmission layer is set. The thickness of the P3 scribing mask is not less than the thickness of the metal electrode layer.
[0012] Preferably, when the orthographic projection of the P2 scribing position on the substrate is tangent to or partially overlaps with the orthographic projection of the P3 scribing position on the substrate, the P2 scribing position mask simultaneously covers the P3 scribing position. After setting up the electron transport layer, first remove the P2 scribing position, then set the P3 scribing position mask on the P3 scribing position, and finally set the metal electrode layer.
[0013] Preferably, when the orthographic projection of the P2 scribing position on the substrate is tangent to or partially overlaps with the orthographic projection of the P3 scribing position on the substrate, the P2 scribing position mask covers the P2 scribing position, the P3 scribing position mask covers the P3 scribing position, and the height dimension of the hole transport layer, the perovskite layer, the electron transport layer, and the metal electrode layer is not greater than the thickness dimension of the P3 scribing position.
[0014] To achieve the above objectives, this application also provides a thin-film solar cell, which is prepared using the above-described method for preparing thin-film solar cells using a mask.
[0015] The above technical solution uses a mask technology solution to replace the existing laser etching solution, which reduces production costs and avoids the process damage caused by laser etching. Compared with the laser etching solution, this solution reduces the process debugging steps and has less requirement for substrate levelness, making it easier to fabricate flexible solar cells.
[0016] Other features and advantages of this application will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing this application. Attached Figure Description
[0017] The accompanying drawings are provided to further illustrate the present application and form part of the specification. Together with the embodiments of the present application, they serve to explain the present application but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application when a gap is provided between the P2 and P3 scribe positions; Figure 2 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application when there is no gap between the P2 and P3 scribe positions; Figure 3 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application, where the P3 scribe line only separates the metal electrode layer. Figure 4 This is a schematic flowchart of a method for fabricating thin-film solar cells using a mask according to an embodiment of this application.
[0018] Figure label: 101-Substrate; 102-ITO layer; 103-Hole transport layer; 104-Perovskite layer; 105-Electron transport layer; 106-Metal electrode layer; 107-P1 scribing position; 108-P2 scribing position; 109-P3 scribing position. Detailed Implementation
[0019] The preferred embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit this application.
[0020] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this application. It should be understood that the drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of this application.
[0021] The term "comprising" and its variations as used herein are open-ended inclusions, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the description below.
[0022] It should be noted that the terms "first" and "second" may be used in this application only to distinguish different devices, components or parts, and are not used to define the order of functions performed by these devices, components or parts or their interdependence.
[0023] It should be noted that the terms "one" and "more" used in this application are illustrative rather than restrictive, and those skilled in the art should understand that, unless explicitly stated otherwise in the context, they should be understood as "one or more". "More" should be understood as two or more.
[0024] The method for fabricating thin-film solar cells using a mask according to this application includes: A scribing position 107 is provided on the upper surface of the substrate 101, and a scribing position mask covers the scribing position 107. The width of the P1 scribing mask matches the width of the P1 scribing position 107; An ITO layer 102 is formed on the upper surface of the substrate 101; ITO layer 102 is disconnected at point 107 marked on P1; Remove the mask from the P1 scribing area; P2 scribing position 108 and P3 scribing position 109 are simultaneously provided on the side of ITO layer 102 facing away from substrate 101, or P2 scribing position 108 is provided alone on the side of ITO layer 102 facing away from substrate 101. When P2 scribing position 108 and P3 scribing position 109 are simultaneously provided on the side of ITO layer 102 facing away from substrate 101, the P2 scribing position mask covers P2 scribing position 108 and the P3 scribing position mask covers P3 scribing position 109. A functional layer is provided on the side of the ITO layer 102 that faces away from the substrate 101; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at both the P2 scribing position 108 and the P3 scribing position 109; Remove the mask at the P2 scribing position; A metal electrode layer 106 is provided on the side of the functional layer facing away from the substrate 101. The metal electrode layer 106 is disconnected by the P3 scribing position mask at the P3 scribing position 109. Remove the mask from the P3 scribing area; When a P2 scribing position 108 is separately provided on the side of the ITO layer 102 facing away from the substrate 101, the P2 scribing position mask covers the P2 scribing position 108. A functional layer is provided on the side of the ITO layer 102 that faces away from the substrate 101; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at point 108 on P2; Remove the mask at the P2 scribing position; A P3 scribing position 109 is provided on the side of the functional layer facing away from the substrate 101, which is not the P2 scribing position 108. The P3 scribing position 109 is covered by a mask. A metal electrode layer 106 is provided on the side of the functional layer facing away from the substrate 101. The metal electrode layer 106 is disconnected by the P3 scribing position mask at the P3 scribing position 109. Remove the mask from the P3 scribing area.
[0025] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0026] Example 1 Figure 1 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application, where a gap is provided between the P2 and P3 scribe lines. Figure 2 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application when there is no gap between the P2 and P3 scribe lines. Figure 3 This is a schematic diagram of the structure of a thin-film solar cell according to an embodiment of this application, where the P3 scribe line only separates the metal electrode layer. Figure 4 This is a schematic flowchart of a method for fabricating thin-film solar cells using a mask according to an embodiment of this application, as shown below. Figures 1-4As shown in the embodiments of this application, a method for preparing thin-film solar cells using a mask is used to prepare thin-film solar cells, such as perovskite solar cells.
[0027] First, in step 201, a scribe line P1 is set on the upper surface of the substrate, and a scribe line mask covers the scribe line P1.
[0028] In one exemplary embodiment, the substrate 101 may be a glass substrate if necessary.
[0029] In one exemplary embodiment, a P1 scribing position 107 is provided on the upper surface of the substrate 101 as needed. The position and width of the P1 scribing position 107 on the substrate 101 are set as needed.
[0030] In one exemplary embodiment, the P1 scribing position 107 is covered by a P1 scribing position mask, which can be understood as the mask being placed on the P1 scribing position 107.
[0031] In one exemplary embodiment, the material of the P1 scribing mask is selected as needed, such as a metal mask.
[0032] In one exemplary embodiment, the width of the P1 scribing mask matches the width of the P1 scribing position 107, and the thickness of the P1 scribing mask is not less than the thickness of the ITO layer 102, for example, the two are equal in size.
[0033] In an exemplary embodiment, when multiple P1 scribing positions 107 need to be set, multiple corresponding P1 scribing position masks are matched as needed, and the multiple P1 scribing position masks constitute a P1 scribing position mask mesh. The P1 scribing position mask mesh can be understood as having strip-shaped masks at the corresponding P1 scribing positions 107, while non-P1 scribing positions 107 are set as empty positions for subsequent setting of ITO layer 102 on substrate 101.
[0034] Step 202: Deposit an ITO layer on the upper surface of the substrate.
[0035] In one exemplary embodiment, an ITO layer 102 is provided on the upper surface of the substrate 101, that is, an ITO layer 102 is provided on the side where the P1 scribing mask is provided.
[0036] In an exemplary embodiment, when the ITO layer 102 is set, due to the presence of the P1 scribing mask, the substrate 101 does not have the ITO layer 102 on the P1 scribing position 107, or it can be understood that the ITO layer 102 is in a disconnected state at the P1 scribing position 107.
[0037] Step 203: Remove the mask of the P1 scribing position.
[0038] In one exemplary embodiment, after setting the ITO layer 102, the P1 scribing mask is removed.
[0039] In one exemplary implementation, removing the P1 scribing mask can be done by removing or taking off the P1 scribing mask.
[0040] In one exemplary embodiment, two technical approaches are used to set the P2 scribing position and the P3 scribing position as needed. One approach is to set the P2 scribing position and the P3 scribing position simultaneously on the side of the ITO layer facing away from the substrate, as shown in step 2041. The other approach is to set the P2 scribing position separately on the side of the ITO layer facing away from the substrate, as shown in step 2042.
[0041] Step 2041: Simultaneously set P2 scribing position and P3 scribing position on the side of the ITO layer facing away from the substrate. The P2 scribing position is covered by a mask, and the P3 scribing position is covered by a mask.
[0042] In one exemplary embodiment, P2 scribing position 108 and P3 scribing position 109 are provided on the side of ITO layer 102 facing away from substrate 101.
[0043] In one exemplary embodiment, a P2 scribing mask is provided at the P2 scribing position 108, which covers the P2 scribing position 108. The material of the P2 scribing mask is the same as that of the P1 scribing mask as needed.
[0044] In one exemplary embodiment, when multiple P2 scribing positions 108 need to be set as needed, multiple corresponding P2 scribing position masks are matched, and the multiple P2 scribing position masks constitute a P2 scribing position mask mesh; similarly, multiple P3 scribing position masks constitute a P3 scribing position mask mesh.
[0045] In one exemplary embodiment, a P3 scribing mask is provided at the P3 scribing position 109, which covers the P3 scribing position 109. The material of the P3 scribing mask is the same as that of the P1 scribing mask as needed.
[0046] In one exemplary embodiment, the P2 datum position 108 and the P3 datum position 109 are arranged in parallel.
[0047] In one exemplary embodiment, the P3 scribing position 109 is disposed on the side of the P2 scribing position 108 opposite to the P1 scribing position 107, as shown below. Figure 1 and Figure 2 As shown, line position 108 of P2 is located to the right of line position 107 of P1, while line position 109 of P3 is located to the right of line position 108 of P2.
[0048] In an exemplary embodiment, when the gap between scribe point P2 108 and scribe point P3 109 is greater than zero, such as Figure 1 As shown, the P2 scribing mask includes: a first masking strip and a second masking strip.
[0049] In an exemplary embodiment, the first masking strip corresponds to the P2 scribing position 108, and the second masking strip corresponds to the P3 scribing position 109. The thickness of both the first and second masking strips is not less than the sum of the heights of the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105. It can be understood that when there is a gap between the P2 scribing position 108 and the P3 scribing position 109, the P3 scribing position mask below the metal electrode layer 106 and the P2 scribing position mask are set on the same mask mesh, or the P2 scribing position mask mesh simultaneously accommodates the P3 scribing position mask in the area below the metal electrode layer 106, or the P2 scribing position mask and the P3 scribing position mask are simultaneously set on the P2 scribing position mask mesh, except that the P3 scribing position mask on the P2 scribing position mask mesh needs to be removed synchronously with the removal of the P2 scribing position mask.
[0050] In an exemplary embodiment, when the orthographic projection of the P2 scribing position 108 on the substrate 101 is tangent to or partially overlaps with the orthographic projection of the P3 scribing position 109 on the substrate 101, the P2 scribing position mask simultaneously covers the P3 scribing position 109; or it can be understood that the P2 scribing position 108 and the P3 scribing position 109 below the metal electrode layer 106 are covered by the same P2 scribing position mask, or it can be understood that the P2 scribing position mask and the P3 scribing position mask are integrally formed and disposed on the same P2 scribing position mask mesh surface.
[0051] Step 2051: Deposit a functional layer on the side of the ITO layer facing away from the substrate. In one exemplary embodiment, the functional layer is a stacked structure, including a hole transport layer 103, a perovskite layer 104, and an electron transport layer 105, wherein the perovskite layer 104 is disposed between the hole transport layer 103 and the electron transport layer 105. Depending on the needs, the functional layer can be adjacent to either the electron transport layer 105 and the ITO layer 102, or it can be adjacent to the hole transport layer 103 and the ITO layer 102. In this application, the functional layer is explained using the example of the hole transport layer 103 and the ITO layer 102 being adjacent. Figures 1 to 3 As shown.
[0052] In one exemplary embodiment, a hole transport layer 103, a perovskite layer 104, and an electron transport layer 105 are sequentially disposed on the side of the ITO layer 102 facing away from the substrate 101, that is, the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105 are sequentially disposed upward on the side of the ITO layer 102 facing away from the substrate 101.
[0053] In one exemplary embodiment, the thickness of the P2 scribing mask is not less than the sum of the heights of the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105, that is, the thickness of the P2 scribing mask is not less than the height of the functional layer.
[0054] In one exemplary embodiment, the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105 are all disconnected at the P2 scribbled position 108 and the P3 scribbled position.
[0055] Step 2061: Remove the mask for the P2 scribing area.
[0056] In one exemplary embodiment, after the hole transport layer 103, the perovskite layer 104 and the electron transport layer 105 are sequentially set, the P2 scribing mask is removed.
[0057] In an exemplary embodiment, removing the P2 scribing mask can be done by removing the P2 scribing mask. After removing the P2 scribing mask, the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105 are all disconnected at the P2 scribing position 108.
[0058] In one exemplary embodiment, when the P2 scribing mask includes a first blocking strip and a second blocking strip, the P2 scribing mask is removed after the electron transmission layer 105 is set.
[0059] Step 2071: A metal electrode layer is disposed on the side of the functional layer facing away from the substrate.
[0060] In one exemplary embodiment, after removing the P2 scribing mask, a metal electrode layer 106 is provided on the side of the electron transport layer 105 facing away from the substrate 101.
[0061] In one exemplary embodiment, the metal electrode layer 106 is disconnected at the P3 scribe point 109 by the P3 scribe point mask.
[0062] In one exemplary embodiment, the metal electrode layer 106 extends downward along the P2 scribing position 108 to connect with the ITO layer 102; it can be understood that after removing the P2 scribing position mask, when the metal electrode layer 106 is set, the metal electrode layer 106 fills the gap on the P2 scribing position 108 after the removal of the P2 scribing position mask.
[0063] In an exemplary embodiment, when the P2 scribing mask includes a first blocking strip and a second blocking strip, the thickness of the P3 scribing mask is not less than the thickness of the metal electrode layer 106, that is, the P3 scribing mask mesh surface at that location has only a thickness for setting the metal electrode layer 106.
[0064] In an exemplary embodiment, when the orthographic projection of the P2 scribing position 108 on the substrate 101 is tangent to or partially overlaps with the orthographic projection of the P3 scribing position 109 on the substrate 101, after the electron transport layer 105 is set, the P2 scribing position mask is removed first, then the P3 scribing position mask is set at the corresponding P3 scribing position 109, and finally the metal electrode layer 106 is set.
[0065] In an exemplary embodiment, as needed, when the orthographic projection of the P2 scribing position 108 on the substrate 101 is tangent to or partially overlaps with the orthographic projection of the P3 scribing position 109 on the substrate 101, the P2 scribing position mask covers the P2 scribing position 108, and the P3 scribing position mask covers the P3 scribing position 109. That is, the P2 scribing position mask mesh and the P3 scribing position mask mesh are simultaneously disposed on the ITO layer 102. The height dimension of the hole transport layer 103, the perovskite layer 104, the electron transport layer 105, and the metal electrode layer 106 is not greater than the thickness dimension of the P3 scribing position 109. At this time, the P3 scribing position mask mesh can be maintained until the metal electrode layer 106 is disposed before removal.
[0066] In an exemplary embodiment, when the orthographic projection of the P2 scribing position 108 on the substrate 101 partially overlaps with the orthographic projection of the P3 scribing position 109 on the substrate 101, the width of the overlapping area is no greater than one-third of the width of either projection.
[0067] Step 2081: Remove the mask for the P3 scribing area.
[0068] In one exemplary embodiment, after the metal electrode layer 106 is set, the P3 scribing mask is removed; removing the P3 scribing mask may be done by removing the P3 scribing mask as needed.
[0069] When a P2 scribe line is separately set on the side of the ITO layer facing away from the substrate, after step 203 ends, proceed to step 2042, as follows. Figure 4 As shown.
[0070] Step 2042: A separate P2 scribing position is set on the side of the ITO layer facing away from the substrate, and the P2 scribing position is covered by a mask.
[0071] In one exemplary embodiment, a P2 scribing position is separately provided on the side of the ITO layer facing away from the substrate, and the P2 scribing position is covered by a mask.
[0072] Step 2052: A functional layer is formed on the side of the ITO layer facing away from the substrate. In an exemplary embodiment, the functional layer is a stacked structure, including a hole transport layer 103, a perovskite layer 104, and an electron transport layer 105, wherein the perovskite layer 104 is disposed between the hole transport layer 103 and the electron transport layer 105.
[0073] In one exemplary embodiment, the thickness of the P2 scribing mask is not less than the height of the functional layer, that is, the thickness of the P2 scribing mask is not less than the sum of the heights of the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105.
[0074] In one exemplary embodiment, the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105 are disconnected at the P2 scribe point 108, as shown. Figures 1-3 As shown.
[0075] Step 2062: Remove the P2 scribing mask.
[0076] In one exemplary implementation, after the functional layer is set up, the P2 scribing mask is removed.
[0077] In an exemplary embodiment, removing the P2 scribing mask can be done by removing the P2 scribing mask. After removing the P2 scribing mask, the hole transport layer 103, the perovskite layer 104, and the electron transport layer 105 are all disconnected at the P2 scribing position 108.
[0078] Step 2072: Set a P3 scribing position on the side of the functional layer facing away from the substrate, which is not the P2 scribing position, and cover the P3 scribing position with a mask.
[0079] In an exemplary embodiment, a P3 scribing position is provided on the side of the functional layer facing away from the substrate. The orthographic projection of the P3 scribing position on the substrate 101 is not connected to the orthographic projection of the P2 scribing position on the substrate 101, that is, the two are not tangent or overlap.
[0080] In one exemplary embodiment, the P3 scribing area is covered by a mask.
[0081] Step 2082: A metal electrode layer is disposed on the side of the functional layer facing away from the substrate.
[0082] In one exemplary embodiment, after removing the P2 scribing mask, a metal electrode layer 106 is formed on the side of the functional layer facing away from the substrate 101.
[0083] In one exemplary embodiment, the metal electrode layer 106 is disconnected at the P3 scribe point 109 by the P3 scribe point mask.
[0084] In one exemplary embodiment, the metal electrode layer 106 extends downward along the P2 scribing position 108 to connect with the ITO layer 102; it can be understood that after removing the P2 scribing position mask, when the metal electrode layer 106 is set, the metal electrode layer 106 fills the gap on the P2 scribing position 108 after the removal of the P2 scribing position mask.
[0085] Step 209: Remove the mask for the P3 scribing area.
[0086] In one exemplary embodiment, after the metal electrode layer 106 is set, the P3 scribing mask is removed; removing the P3 scribing mask may be done by removing the P3 scribing mask as needed.
[0087] In one exemplary embodiment, when setting the P1 scribing mask, P2 scribing mask, and P3 scribing mask, the edges of these three can be provided with magnetic attachments for fixing to maintain stability and prevent displacement relative to the substrate 101.
[0088] In one exemplary embodiment, the P1 scribing mask, the P2 scribing mask, and the P3 scribing mask are configured as a frame as needed, and the P1 scribing mask, the P2 scribing mask, and the P3 scribing mask are respectively configured within the frame.
[0089] In one exemplary embodiment, the mesh thickness of the P1 scribing mask, the P2 scribing mask, and the P3 scribing mask is 0.1-5mm, for example, 0.3mm.
[0090] In an exemplary embodiment, the method for fabricating thin-film solar cells using masks in this application embodiment can employ an alignment recognition device for positioning and identification when setting the P1 scribing mask, P2 scribing mask, and P3 scribing mask. For example, alignment can be performed using a CCD camera, mechanical alignment, manual alignment using an optical microscope, etc.
[0091] In one exemplary embodiment, the materials of the P1 scribing mask, the P2 scribing mask, and the P3 scribing mask can be metal, ceramic, PET, etc.
[0092] In one exemplary embodiment, when the structural diagram of a thin-film solar cell... Figure 3 As shown, when the width dimensions of scribing positions P1 (107), P2 (108), and P3 (109) are the same, the same mask can be used, which can further save costs.
[0093] Example 2 Example 2 is a thin-film solar cell, which is prepared using the mask-based method described in the above examples.
[0094] In one exemplary embodiment, the structure of the thin-film solar cell of this application includes two technical solutions: one with a gap between the P2 and P3 scribing positions, and the other without a gap. Figure 1 and Figure 2 The two structures shown.
[0095] In one exemplary embodiment, the thin-film solar cell of this application is, for example, a perovskite solar cell.
[0096] It will be understood by those skilled in the art that the above are merely preferred embodiments of this application and are not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for fabricating thin-film solar cells using a mask, characterized in that, include: A P1 scribing position is provided on the upper surface of the substrate, and the P1 scribing position is covered by a mask. The width of the P1 scribing mask matches the width of the P1 scribing position. An ITO layer is formed on the upper surface of the substrate; The ITO layer is disconnected at the P1 mark position; Remove the P1 scribing mask; Both P2 and P3 scribing positions are simultaneously provided on the side of the ITO layer facing away from the substrate, or the P2 scribing position is provided alone on the side of the ITO layer facing away from the substrate. When P2 scribing position and P3 scribing position are simultaneously provided on the side of the ITO layer facing away from the substrate, the P2 scribing position mask covers the P2 scribing position, and the P3 scribing position mask covers the P3 scribing position. A functional layer is disposed on the side of the ITO layer facing away from the substrate; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at both the P2 and P3 marked positions. Remove the P2 scribing mask; A metal electrode layer is disposed on the side of the functional layer facing away from the substrate, and the metal electrode layer is disconnected by the P3 scribing position mask at the P3 scribing position. Remove the P3 scribing mask; When the P2 scribing position is set separately on the side of the ITO layer facing away from the substrate, the P2 scribing position mask covers the P2 scribing position. A functional layer is disposed on the side of the ITO layer facing away from the substrate; The thickness of the P2 scribing mask is not less than the height of the functional layer; The functional layer is disconnected at the P2 marked position; Remove the P2 scribing mask; A P3 scribing position is provided on the side of the functional layer facing away from the substrate, other than the P2 scribing position, and the P3 scribing position is covered by a mask. A metal electrode layer is disposed on the side of the functional layer facing away from the substrate, and the metal electrode layer is disconnected by the P3 scribing position mask at the P3 scribing position. Remove the P3 scribing mask.
2. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, The thickness of the P1 scribing mask is not less than the thickness of the ITO layer.
3. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, The P2 and P3 line marking positions are arranged in parallel.
4. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, The P3 line mark is located on the side of the P2 line mark that faces away from the P1 line mark.
5. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, The metal electrode layer extends downward along the P2 scribe line to connect with the ITO layer.
6. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, When the gap between the P2 scribing position and the P3 scribing position is greater than zero, the P2 scribing position mask includes: a first blocking strip and a second blocking strip; The first blocking strip corresponds to the P2 scribbled position, and the second blocking strip corresponds to the P3 scribbled position; The thickness of both the first and second shielding strips is not less than the height of the functional layer.
7. The method for fabricating thin-film solar cells using a mask according to claim 6, characterized in that, When the P2 scribing mask includes a first blocking strip and a second blocking strip, the P2 scribing mask is removed after the functional layer is set. The thickness of the P3 scribing mask is not less than the thickness of the metal electrode layer.
8. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, When the orthographic projection of the P2 scribing position on the substrate is tangent to or partially overlaps with the orthographic projection of the P3 scribing position on the substrate, the P2 scribing position mask simultaneously covers the P3 scribing position. After setting the functional layer, first remove the P2 scribing mask, then set the P3 scribing mask on the P3 scribing position, and finally set the metal electrode layer.
9. The method for fabricating thin-film solar cells using a mask according to claim 1, characterized in that, When the orthographic projection of the P2 scribing position on the substrate is tangent to or partially overlaps with the orthographic projection of the P3 scribing position on the substrate, the P2 scribing position mask covers the P2 scribing position, the P3 scribing position mask covers the P3 scribing position, and the height dimension of the functional layer and the metal electrode layer is not greater than the thickness dimension of the P3 scribing position mask.
10. A thin-film solar cell, characterized in that, It is prepared by the method of preparing thin-film solar cells using a mask as described in any one of claims 1-9.