Perovskite solar cell based on pyridine heterocyclic organic compound-dithiopyr passivation and preparation method thereof

Abstract

The invention relates to a perovskite solar cell based on pyridine heterocyclic organic compound-dithiopyr passivation and a preparation method of the perovskite solar cell. The perovskite solar cell adopts a p-i-n trans structure, and sequentially comprises a glass substrate, a transparent conductive oxide, a hole transport layer, an organic-inorganic hybrid perovskite active layer, an electron transport layer, a hole barrier layer and a metal electrode from bottom to top. A pyridine heterocyclic organic compound-dithiopyr is selected to perform surface passivation on the perovskite active layer, and fluorine-containing and sulfur-substituted pyridine heterocyclic rings can form short and strong chemical bonds with lead ions, so that perovskite crystal lattices are shrunk, the stability of the perovskite active layer is effectively enhanced, and the perovskite active layer can also be used as a moisture-proof barrier to improve the photoelectric conversion efficiency. Moisture invasion is prevented, and the internal structure of the battery is protected from being damaged. And under the synergistic effect of strong chemical bonds and hydrophobicity, the stable performance of the battery can be kept under different environmental conditions.

Description

Technical Field

[0001] This invention relates to the fields of optoelectronic thin film technology and perovskite solar cells, specifically to a passivation material based on the pyridine heterocyclic organic compound fluoxetine and a perovskite solar cell and its preparation method. Background Technology

[0002] Metal halide perovskite solar cells (PSCs) have emerged as one of the most promising candidate technologies for terawatt-scale photovoltaic (PV) deployments, with their core advantages lying in their combination of excellent power conversion efficiency (PCE) and cost-effective solution processing characteristics. To advance the commercialization of this technology, a crucial aspect of PSC fabrication is achieving stable and efficient defect passivation during the surface treatment stage. This step is also a core technological prerequisite for the controllable fabrication of high-performance PSCs.

[0003] In pin-configured perovskite solar cells, the upper interface corresponds to the heterogeneous contact region between the perovskite active layer and the electron transport layer (ETL), and its interface characteristics directly dominate the device's photoelectric performance and long-term stability. High-density defect states are commonly found on the surface of perovskite films, primarily stemming from lattice distortion and unsaturated coordination sites caused by rapid solvent evaporation and loss of volatile components such as organic cations during fabrication. These defects form deep-level traps in the interface region, inducing severe nonradiative recombination losses and significantly degrading interlayer carrier transport efficiency. Simultaneously, in the high-temperature and high-humidity operating environment, the weaker ionic bonds within the perovskite lattice are prone to dissociation, generating vacancy defects (such as iodine vacancies) and interstitial ions. These migratory defects diffuse and accumulate towards the metal electrode / ETL interface, accelerating interfacial chemical reactions and posing a severe challenge to device stability.

[0004] The core mechanism for suppressing ion migration lies in the effective passivation of uncoordinated sites (such as undercoordinated Pb²⁺) in the perovskite lattice, while the structural integrity of the electron-selective contact interface, as the final barrier to ion migration, is crucial. Fullerene materials (such as C...) 60 Perovskite is a widely used electron-selective contact layer material, but its thermodynamic stability is insufficient, and it is prone to agglomeration and crystallization under high-temperature service conditions, leading to the disruption of film continuity. This phenomenon not only hinders charge transport across the interface but also weakens its ability to block interfacial reactions between the metal electrode and the perovskite active layer, ultimately accelerating device performance degradation.

[0005] Therefore, constructing an ideal upper interface contact requires meeting three core conditions: (1) efficient passivation of perovskite surface defects and regulation of surface structure stability; (2) precise matching of interface energy levels and excellent charge transport dynamics; and (3) the electron-selective contact layer must have a dense structure and long-term stability to effectively block ion migration. In summary, optimizing the upper interface microstructure and chemical environment through interface engineering strategies is a key path to overcome the bottleneck of long-term service life of perovskite solar cells. Summary of the Invention

[0006] To address the aforementioned issues, this study selected pyridine-based heterocyclic organic compound fluoxetine as a bifunctional candidate material and introduced it into an inverted perovskite solar cell as an interface passivation layer to solve the key problems. The fluorinated hydrophobic side chains in this molecule can construct a robust hydrophobic protective layer, improving the device's environmental stability through physical barrier effects; simultaneously, the π electron cloud of its pyridine ring and the lone pair electrons of its thiol group (-SH) can achieve efficient passivation of surface defects in the perovskite film. Thermodynamically, fluoxetine can significantly increase the formation energy of surface defects in perovskites and stabilize undercoordinated Pb through strong coordination. 2+ Species, while simultaneously inhibiting the generation and growth of non-photoactive phases. During electron transport layer (ETL) deposition, fluoxetine can induce C through intermolecular interactions. 60 Molecular orientation and stacking form a dense and uniform layered structure, optimizing the uniformity of thin film deposition, thereby constructing an ion migration barrier layer that effectively inhibits the migration behavior of halogen anions and organic cations inside the device.

[0007] Furthermore, the material of the interface passivation layer has the following structure:

[0008] Furthermore, the solvent dissolved in the interface passivation layer material is isopropanol (IPA); Furthermore, the concentration of the interface passivation layer is 1% to 3%, preferably 1.5%; Another aspect of the present invention provides an inverted perovskite solar cell, comprising, from bottom to top, a glass substrate, a transparent conductive oxide, a hole transport layer, an organic-inorganic hybrid perovskite active layer, an electron transport layer, a hole blocking layer, and a metal electrode. Simultaneously, an interface passivation layer is introduced on the surface of the organic-inorganic hybrid perovskite active layer, wherein the interface passivation layer is the aforementioned interface passivation layer material.

[0009] Furthermore, the transparent conductive oxide includes either indium tin oxide (ITO) or fluorine-doped indium tin oxide (FTO); Furthermore, the hole transport layer is 4PABCz, and the solvent used is ethanol (ETOH) with a concentration of 0.2~1 mg / ml, preferably 0.5 mg / ml; Furthermore, the organic-inorganic hybrid perovskite active layer precursor solution comprises: Cs0.05FA0.95PbI3, which is a mixture of cesium iodide (CsI), formamidinium hydroiodate (FAI), lead iodide (PbI2), methylammonium chloride (MACl), and lead chloride (PbCl2) in a molar ratio of 0.05:0.95:1.05:0.1:0.03, and the solvent is a mixed solvent of DMF and DMSO, preferably in a ratio of DMF:DMSO = 4:1; Furthermore, a hole blocking layer is provided between the electron transport layer and the electrode layer; Furthermore, the electron transport layer is C60 with a thickness of 20-30 nm, preferably 25 nm. Furthermore, the hole blocking layer is a BCP with a thickness of 5~10nm, preferably 7nm; Furthermore, the metal electrode is any one of gold (Au), silver (Ag), and copper (Cu), with a thickness of 80~120nm, preferably 100nm.

[0010] This invention also provides a method for fabricating the applied inverse perovskite solar cell, which includes the following steps: (1) Preparation of a surface passivation solution for pyridine heterocyclic organic compounds, specifically fluthionine; (2) Perform surface plasma cleaning on the transparent conductive substrate and deposit a hole transport layer on its surface; (3) Deposit a perovskite layer on the surface of the hole transport layer; (4) The pyridine heterocyclic organic compound-fluthiosulfate surface passivation solution obtained in step (1) is dynamically spin-coated onto the surface of the perovskite active layer to form an interface passivation layer. (5) Deposit an electron transport layer in the passivation layer at the interface; (6) Deposit a hole blocking layer on the surface of the electron transport layer; (7) Deposit a metal electrode on the surface of the hole blocking layer.

[0011] The method for preparing the interface passivation layer solution described in this invention is to dissolve 10-30 μL of fluthiamethoxam solution in 1 mL of IPA solution, and store it at 8-10°C.

[0012] Compared with the prior art, the present invention has the following beneficial effects: (1) Efficient passivation of perovskite surface defects and regulation of surface structure stability: The passivation layer material fluoxetine used in this invention is rich in elements with lone pairs of electrons such as oxygen, nitrogen, and sulfur, which can form short and strong chemical bonds with lead ions, thereby shrinking the perovskite lattice and effectively enhancing the stability of the perovskite active layer; at the same time, fluoxetine is rich in fluorinated branches, which can act as a moisture barrier to prevent moisture from entering and protect the internal structure of the battery from damage. (2) Precise matching of interface energy levels and excellent charge transport dynamics: The passivation layer material used in this invention induces carrier redistribution and modulates the work function (WF) of the perovskite surface by reconstructing the surface states of the active layer to improve the open circuit voltage; (3) Dense structure and long-term stability of electron selective contact layer: The passivation layer material used in this invention improves the surface roughness of the film, forms a surface conducive to uniform deposition of C60, and induces the directional stacking growth of C60 layers to form a dense structure, thus forming an effective barrier to inhibit ion migration. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below: Figure 1 This is a schematic diagram of a comparative perovskite solar cell. Figure 2 This is a schematic diagram of the structure of a perovskite solar cell in an embodiment; Figure 3 Here is a SEM image of the perovskite layer in Comparative Example 1; Figure 4 SEN image of the perovskite layer in Example 2; Figure 5 XRD images of Comparative Example 1 and Example 2; Figure 6 XPS Pb images of Comparative Example 1 and Example 2; Figure 7 XPS N images of Comparative Example 1 and Example 2; Figure 8 XPS I images of Comparative Example 1 and Example 2; Figure 9 The current-voltage (JV) curves of small-area (0.06 cm2) inverted perovskite solar cells of the present invention are shown in Example 1 and Examples 1-5. Detailed Implementation

[0014] The technical solutions of the present invention will be described in complete and detailed manner below with reference to the embodiments of the present invention. The described embodiments are only some embodiments of the present invention and not all of them. Based on the embodiments of the present invention, those skilled in the art are all within the protection scope of the present invention without making inventive inventions.

[0015] This invention employs an interface passivation layer material for the surface of an inverse perovskite active layer, specifically a pyridine-based heterocyclic organic compound—fluoxetine. This organic compound not only effectively passivates surface defects in the active layer and improves surface structural stability, but also enhances the hydrophobicity of the thin film surface, ensuring long-term stability during device operation.

[0016] A second aspect of the present invention provides an inverted perovskite solar cell, comprising, from bottom to top, a glass substrate, a transparent conductive oxide, a hole transport layer, an organic-inorganic hybrid perovskite active layer, an electron transport layer, a hole blocking layer, and a metal electrode. An interface passivation layer is introduced on the surface of the organic-inorganic hybrid perovskite active layer, wherein the interface passivation layer is the aforementioned interface passivation layer material.

[0017] In some specific embodiments of the present invention, the transparent conductive oxide includes any one of indium tin oxide (ITO) and fluorine-doped indium tin oxide (FTO); In some specific embodiments of the present invention, the hole transport layer is 4PABCz, and the solvent used is ethanol (ETOH) with a concentration of 0.2~1 mg / ml, preferably 0.5 mg / ml; In some specific embodiments of the present invention, the organic-inorganic hybrid perovskite active layer precursor solution comprises: Cs0.05FA0.95PbI3, which is a mixture of cesium iodide (CsI), formamidinium hydroiodate (FAI), lead iodide (PbI2), methylammonium chloride (MACl), and lead chloride (PbCl2) in a molar ratio of 0.05:0.95:1.05:0.1:0.03, and the solvent is a mixed solvent of DMF and DMSO, preferably in a ratio of DMF:DMSO = 4:1; In some specific embodiments of the present invention, a hole blocking layer is provided between the electron transport layer and the electrode layer; In some specific embodiments of the present invention, the electron transport layer is C60 with a thickness of 20-30 nm, preferably 25 nm; In some specific embodiments of the present invention, the hole blocking layer is a BCP with a thickness of 5~10nm, preferably 7nm; In some specific embodiments of the present invention, the metal electrode is any one of gold (Au), silver (Ag), and copper (Cu), with a thickness of 80~120nm, preferably 100nm.

[0018] This invention also provides a method for fabricating the applied inverse perovskite solar cell, which includes the following steps: (1) Preparation of surface passivation solution of pyridine heterocyclic organic compound - fluthionine; (2) Perform surface plasma cleaning on the transparent conductive substrate and deposit a hole transport layer on its surface; (3) Deposit a perovskite layer on the surface of the hole transport layer; (4) The pyridine heterocyclic organic compound-fluthiosulfate surface passivation solution obtained in step (1) is dynamically spin-coated onto the surface of the perovskite active layer to form an interface passivation layer. (5) Deposit an electron transport layer in the passivation layer at the interface; (6) Deposit a hole blocking layer on the surface of the electron transport layer; (7) Deposit a metal electrode on the surface of the hole blocking layer.

[0019] The selection of materials and the preparation processes involved in the glass substrate, transparent conductive oxide, hole transport layer, organic-inorganic hybrid perovskite active layer, electron transport layer, hole blocking layer and metal electrode of the perovskite solar cell are all conventional methods in the art and are not limited here. Those skilled in the art can make selections according to actual needs.

[0020] In some specific embodiments of the present invention, the method for preparing the described interface passivation layer solution is to dissolve 10-30 μL of fluthiamethoxam solution in 1 mL of IPA solution, and the storage conditions are 8-10°C.

[0021] The embodiments of this application are described in detail below. It should be noted that all reagents used in the following embodiments are commercially available.

[0022] Comparative Example 1

[0023] This comparative example introduces a reverse perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 1 As shown, the battery comprises layers of FTO / SAM / PVK / C60 / BCP / Cu, and its fabrication method includes the following steps: (1) Take a fluorine-doped indium tin oxide (FTO) transparent conductive substrate glass with dimensions of 2.5mm x 2.5mm x 2mm and perform surface treatment in a plasma cleaning equipment according to the following parameters: speed 250mm / s; X-axis coordinate: 73.059mm; Y-axis coordinate: 180mm; Z-axis coordinate: 55mm, and then transfer it to an N2 glove box. The glove box atmosphere is: Temp≤25℃, RH≤10%. (2) Take 80 μL of 0.5 mg / ml [4-(9H-9'-phenyl-3,3'-dicarbazo-9-yl)butyl]phosphoric acid (4PABCz) ethanol solution and add it to the spin-coating substrate. Spin-coat the substrate for 30 s at a speed of 4000 rpm and an acceleration of 2000 rpm / s. Transfer the glass substrate after spin-coating the hole transport layer to a hot stage at 100°C and anneal for 10 min. (3) Dissolve 97.4 mg cesium iodide (CsI), 1225 mg formamidinium hydroiodate (FAI), 3631 mg lead iodide (PbI2), 50.65 mg methylammonium chloride (MACl), and 62.57 mg lead chloride (PbCl2) in a mixed organic solvent of 4 ml DMF and 1 ml DMSO, and shake to dissolve for at least 4 hours to obtain a perovskite precursor solution. Take 80 μL of the prepared precursor solution and drop it onto the hole transport layer, and deposit a perovskite film using a spin coating process. The spin coating program is as follows: spin speed 4000 rpm, acceleration 800 rpm / s, spin coating for 50 s, add 100 μL of chlorobenzene as an antisolvent at the 20th second from the end of the program, and then anneal at 110 °C for 20 minutes on a hot plate.

[0024] (4) Place the glass with the perovskite thin film into the vapor deposition apparatus, start the automatic vacuuming button, and wait until the vacuum reaches 1X10 -4 First, select the C60 evaporation program, set the evaporation temperature to 480 degrees Celsius, and wait until the evaporation rate reaches 0.07 Å / s. Then, open the substrate baffle to begin deposition, evaporating to 25 nm and ending the process. Next, begin BCP deposition, setting the evaporation temperature to 130 degrees Celsius. When the evaporation rate reaches 0.01 Å / s, open the substrate baffle to begin deposition, evaporating to 6 nm and ending the process. Break the vacuum, replace the silver evaporation template, and restart the automatic vacuuming process to 1 x 10⁻⁶. -4 Pa, select the Cu vapor deposition program. This program is in automatic operation mode. Just click to start the deposition. The program will automatically end and break the vacuum after vapor deposition up to 100nm.

[0025] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2 Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9As shown. Example 1

[0026] This embodiment describes an inverted perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 2 As shown, the battery comprises FTO / SAM / PVK / Interface layer / C60 / BCP / Cu layers. Its preparation method is basically the same as that of Comparative Example 1, except that an interface passivation layer is added between the perovskite active layer and the electron transport layer. The specific preparation method of the interface passivation layer is as follows: 50 μL of a 1% interface passivation layer solution is taken and spin-coated at a rotation speed of 5000 rpm and an acceleration of 2000 rpm / s for 40 s. The interface passivation layer solution is dynamically dropped onto the prepared perovskite thin film layer.

[0027] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2 Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9 As shown. It can be seen that, compared to the control example, the performance improvement of the embodiment is reflected in the short-circuit current ( Jsc ) and open circuit voltage ( Voc Improvement of: Jsc From 22.92 mA / cm 2 Increased to 23.92 mA / cm 2 ; Voc Increased from 1.17 V to 1.18 V. Example 2

[0028] This embodiment describes an inverted perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 2 As shown, the battery comprises FTO / SAM / PVK / Interface layer / C60 / BCP / Cu layers, and its preparation method is basically the same as that of Example 1, except that the concentration of the interface passivation layer solution used is 1.5%.

[0029] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2 Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9 As shown. It can be seen that, compared to the control example, the performance improvement of the embodiment is reflected in the short-circuit current ( Jsc ) and open circuit voltage ( Voc Improvement of: JscFrom 22.92 mA / cm 2 Increased to 24.03 mA / cm 2 ; Voc The voltage was increased from 1.17 V to 1.18 V. By introducing an interface passivation layer, porosity at perovskite grain boundaries was effectively reduced, which increased the defect formation energy on the perovskite surface, stabilized undercoordinated Pb(II), and eliminated the non-photoactive phase. Due to its suitable dipole characteristics, prothioconazole induced carrier redistribution and modulated the work function (WF) of the perovskite surface to increase the open-circuit voltage. Interaction and grain boundary improvement diagrams are shown below. Figures 3-8 . Example 3

[0030] This embodiment describes an inverted perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 2 As shown, the battery comprises FTO / SAM / PVK / Interface layer / C60 / BCP / Cu layers, and its preparation method is basically the same as that of Example 1, except that the concentration of the interface passivation layer solution used is 2%.

[0031] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2 Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9 As shown. It can be seen that, compared to the control example, the performance improvement of the embodiment is reflected in the short-circuit current ( Jsc ) and open circuit voltage ( Voc Improvement of: Jsc From 22.92 mA / cm 2 Increased to 23.14 mA / cm 2 ; Voc Increased from 1.17 V to 1.18 V. Example 4

[0032] This embodiment describes an inverted perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 2 As shown, the battery comprises FTO / SAM / PVK / Interface layer / C60 / BCP / Cu layers, and its preparation method is basically the same as that of Example 1, except that the concentration of the interface passivation layer solution used is 2.5%.

[0033] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9 As shown. It can be seen that, compared to the control example, the performance improvement of the embodiment is reflected in the short-circuit current ( Jsc Improvement of ) Jsc From 22.92 mA / cm 2 Increased to 23.88 mA / cm 2 .

[0034] Example 5 This embodiment describes an inverted perovskite solar cell with a fluorine-sulfuric acid interface passivation layer, as shown in the attached figure. Figure 2 As shown, the battery comprises FTO / SAM / PVK / Interface layer / C60 / BCP / Cu layers, and its preparation method is basically the same as that of Example 1, except that the concentration of the interface passivation layer solution used is 3%.

[0035] Performance testing: A circular hole with an area of ​​0.06 cm² is used. 2 Using a 0.1mm thick alloy sheet as a light-shielding template, the current-voltage characteristic curves of the inverted perovskite solar cell were tested under AM 1.5 G illumination. The results are as follows: Figure 9 As shown. It can be seen that, compared to the control example, the performance improvement of the embodiment is reflected in the short-circuit current ( Jsc ) and open circuit voltage ( Voc Improvement of: Jsc From 22.92 mA / cm 2 Increased to 23.90 mA / cm 2 ; Voc Increased from 1.17 V to 1.18 V.

[0036] Open-circuit voltages of forward and reverse scans in Comparative Examples 1 and Examples 1-5 ( Voc ), short-circuit current ( Jsc The specific parameters for fill factor (FF) and power conversion efficiency (PCE) are shown in Table 1.

[0037] Table 1

Claims

1. A perovskite solar cell passivated with a pyridine-based heterocyclic organic compound, fluoxetine, characterized in that, The surface passivation material of the organic-inorganic hybrid perovskite active layer is a pyridine-based heterocyclic organic compound, fluthioridin.

2. The organic-inorganic hybrid perovskite active layer surface passivation material according to claim 1 has the structure of formula (1): Equation (1).

3. A perovskite solar cell based on pyridine heterocyclic organic compound-fluoxetine passivation according to claim 1, characterized in that, The active layer surface passivation material is dissolved in isopropanol (IPA).

4. A perovskite solar cell based on pyridine heterocyclic organic compound-fluoxetine passivation according to claim 1, characterized in that, The concentration of the passivation material on the active layer surface is 1% to 3%, preferably 1.5%.

5. A perovskite solar cell, employing a pin-inverted structure, comprising, from bottom to top, a glass substrate, a transparent conductive oxide, a hole transport layer, an organic-inorganic hybrid perovskite active layer, an electron transport layer, a hole blocking layer, and a metal electrode, characterized in that, An interface passivation layer is provided between the perovskite layer and the electron transport layer, and the material of the interface passivation layer is a pyridine heterocyclic organic compound - fluoxetine.

6. A perovskite solar cell according to claim 5, characterized in that, The transparent conductive oxide includes any one of indium tin oxide (ITO) and fluorine-doped indium tin oxide (FTO); the hole transport layer is [4-(9H-9'-phenyl-3,3'-dicarbazo-9-yl)butyl]phosphate (4PABCz); the organic-inorganic hybrid perovskite active layer composition is Cs0.05FA0.95PbI3, prepared from a precursor solution including cesium iodide (CsI), formamidinium hydroiodate (FAI), lead iodide (PbI2), methylammonium chloride (MACl), and lead chloride (PbCl2); the electron transport layer is a fullerene derivative (C60); the hole blocking layer is copper bath (BCP). The metal electrode is any one of gold (Au), silver (Ag), and copper (Cu).

7. A perovskite solar cell according to any one of claims 5 to 6, characterized in that, The hole transport layer 4PABCz uses ethanol (ETOH) as the solvent, with a concentration of 0.2~1 mg / ml, preferably 0.5 mg / ml; the organic-inorganic hybrid perovskite active layer precursor solution uses a mixed solvent of DMF and DMSO, preferably in a ratio of DMF:DMSO=4:1; the electron transport layer C60 has a thickness of 20~30 nm, preferably 25 nm; the hole blocking layer BCP has a thickness of 5~10 nm, preferably 7 nm; the metal electrode is any one of gold (Au), silver (Ag), and copper (Cu), with a thickness of 80~120 nm, preferably 100 nm.

8. A method for preparing a perovskite solar cell according to any one of claims 5 to 7, characterized in that, Includes the following steps: (1) Preparation of surface passivation solution of pyridine heterocyclic organic compound - fluthionine (2) Perform surface plasma cleaning on the transparent conductive substrate and deposit a hole transport layer on its surface; (3) Deposit a perovskite layer on the surface of the hole transport layer; (4) The pyridine heterocyclic organic compound-fluthiosulfate surface passivation solution obtained in step (1) is dynamically spin-coated onto the surface of the perovskite active layer to form an interface passivation layer. (5) Deposit an electron transport layer in the passivation layer at the interface; (6) Deposit a hole blocking layer on the surface of the electron transport layer; (7) Deposit a metal electrode on the surface of the hole blocking layer.

9. The method for preparing a perovskite solar cell according to claim 8, characterized in that, The method for preparing the pyridine heterocyclic organic compound-fluthiocyanate surface passivation solution is to dissolve 10-30 μL of fluthiocyanate solution in 1 mL of IPA solution.

10. The method for preparing a perovskite solar cell according to claim 9, characterized in that, The pyridine heterocyclic organic compound-fluthiocyanate surface passivation solution is stored at 8~10℃.

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