Wafer detection method and related device

Abstract

The invention provides a wafer detection method and a related device, and the method comprises the steps: obtaining an optical signal representing the shape of the edge of a wafer; and according to the change of the light intensity or the light sensing area of the light signal at each position of the wafer edge, determining the position of a wafer gap or a broken edge at the wafer edge. According to the invention, the change of the light intensity or the light sensing area of the light signal at each position of the wafer edge is taken as the basis for determining the position of the notch or the edge breakage of the wafer, the detection missing or misjudgment caused by single position point detection is avoided, and the accuracy of determining the position of the notch or the edge breakage of the wafer is high. By adopting the detection method provided by the embodiment of the invention, the position of the notch or the edge breakage of the wafer can be determined with high accuracy, the situation that multiple times of detection or manual intervention detection is needed is avoided, the wafer processing efficiency is improved, and the improvement of the wafer product quality is also facilitated.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a wafer inspection method and related apparatus. Background Technology

[0002] A wafer notch is a feature of the wafer edge during semiconductor manufacturing, typically a small cut or notch in the shape of a V. This notch plays a positioning role in subsequent IC manufacturing, processing, and handling equipment. The reference direction of each manufacturing process is relative to the notch. Determining the location of the wafer notch is one of the key factors in improving wafer processing efficiency.

[0003] Wafer edge chipping is a common problem in semiconductor manufacturing, referring to defects or breakage occurring at the edges of a wafer. Identifying the location of the chip and repairing it accordingly, or rejecting wafers with chipped edges from subsequent processing, are important measures to improve wafer product quality.

[0004] Existing wafer inspection methods have low accuracy in determining the location of wafer notches or chipped edges, often requiring multiple inspections or manual intervention, which reduces wafer processing efficiency. Summary of the Invention

[0005] This invention provides a wafer inspection method and related apparatus to solve the problem that existing wafer inspection methods have low accuracy in determining the location of wafer notches or chipped edges, often requiring multiple inspections or manual intervention, resulting in reduced wafer processing efficiency.

[0006] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, embodiments of the present invention provide a wafer inspection method, comprising: Acquire optical signals characterizing the morphology of the wafer edge; Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, the location of wafer notches or chipping can be determined.

[0007] Optionally, the location of the wafer notch or chipping at the wafer edge is determined based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, including: The change in light intensity is compared with a preset threshold range for light intensity change that characterizes wafer notches. If the change in light intensity exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in light intensity does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge. or, The change in photosensitive area is compared with a preset threshold range for the change in photosensitive area that characterizes wafer notches. If the change in photosensitive area exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in photosensitive area does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge.

[0008] Optionally, the location of the wafer notch or chipping at the wafer edge is determined based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, including: Determine the starting and ending points of the change in light intensity of the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting point and ending point of the change. Optionally, the location of the wafer notch or chipping at the wafer edge is determined based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, including: Determine the start and end times of the change in the light intensity of the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting time and ending time of the change.

[0009] Optionally, the change starting position includes: a first change starting position where the light intensity changes from low to high, and a second change starting position where the light intensity changes from high to low; The endpoint of the change includes: a first endpoint where the light intensity changes from low to high to a preset high intensity, and a second endpoint where the light intensity changes from high to low to a preset low intensity. Determining the location of the wafer notch or chipping edge based on the starting and ending positions of the change includes: The location of the wafer notch or chipped edge is determined based on the first change start position, the first change end position, the second change start position, and the second change end position.

[0010] Optionally, the starting time of the change includes: a first starting time when the light intensity changes from low to high, and a second starting time when the light intensity changes from high to low; The endpoint of the change includes: a first endpoint when the light intensity changes from low to high to a preset high intensity, and a second endpoint when the light intensity changes from high to low to a preset low intensity. Determining the location of the wafer notch or chipping edge based on the starting time and ending time of the change includes: The location of the wafer notch or chipped edge is determined based on the first change start time, the first change end time, the second change start time, and the second change end time.

[0011] Optionally, the location of the wafer notch or chipping at the wafer edge is determined based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, including: Determine the starting and ending positions of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting point and the ending point. Optionally, the location of the wafer notch or chipping at the wafer edge is determined based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, including: Determine the start and end times of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the start time and the end time.

[0012] Optionally, the starting position includes: a first starting position where the photosensitive area begins to change from small to large, and a second starting position where the photosensitive area begins to change from large to small; The endpoint positions include: a first endpoint position where the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint position where the photosensitive area changes from large to small to a preset small photosensitive area. Determining the location of the wafer notch or chipped edge based on the starting point and the ending point includes: The location of the wafer notch or chipped edge is determined based on the first starting position, the first ending position, the second starting position, and the second ending position.

[0013] Optionally, the starting point time includes: a first starting point time when the photosensitive area begins to change from small to large, and a second starting point time when the photosensitive area begins to change from large to small; The endpoint time includes: a first endpoint time when the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint time when the photosensitive area changes from large to small to a preset small photosensitive area. Determining the location of the wafer notch or chipping based on the start time and the end time includes: The location of the wafer notch or chipped edge is determined based on the first starting time, the first ending time, the second starting time, and the second ending time.

[0014] Secondly, embodiments of the present invention provide a wafer inspection apparatus, comprising: The acquisition module is used to acquire optical signals that characterize the morphology of the wafer edge; The execution module is used to determine the location of wafer notches or chipping at the wafer edge based on the changes in light intensity or photosensitive area of ​​the light signal at various locations on the wafer edge.

[0015] Thirdly, embodiments of the present invention provide an electronic device, including a processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the wafer inspection method as described in any one of the first aspects.

[0016] Fourthly, embodiments of the present invention provide a readable storage medium storing a program or instructions that, when executed by a processor, implement the steps of the wafer inspection method as described in any one of the first aspects.

[0017] Fifthly, embodiments of the present invention provide a computer program product, including computer instructions, which, when executed by a processor, implement the steps of the wafer inspection method as described in any one of the first aspects.

[0018] In this embodiment of the invention, optical signals characterizing the morphology of the wafer edge are acquired; based on the changes in light intensity or photosensitive area at various locations on the wafer edge, the location of wafer notches or chipping is determined. This invention uses the changes in light intensity or photosensitive area at various locations on the wafer edge as the basis for determining the location of wafer notches or chipping, avoiding detection omissions or misjudgments caused by single-point detection. This invention achieves high accuracy in determining the location of wafer notches or chipping. The detection method of this embodiment can determine the location of wafer notches or chipping with high accuracy, avoiding the need for multiple detections or manual intervention, improving wafer processing efficiency, and also contributing to improved wafer product quality. Attached Figure Description

[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 This is a schematic flowchart of the wafer inspection method according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the detection device. Figure 3A schematic diagram of the wafer notch; Figure 4 A schematic diagram illustrating the principle of generating optical signals for the detection device; Figure 3 A schematic diagram of the wafer notch; Figure 5 This is one of the schematic diagrams illustrating the principle of changes in photosensitive area; Figure 6 This is the second schematic diagram illustrating the principle of changes in photosensitive area. Figure 7 A schematic diagram illustrating the principle for determining the location of wafer notches or chipped edges; Figure 8 This is a schematic block diagram of the wafer inspection device according to an embodiment of the present invention; Figure 9 This is a schematic block diagram of an electronic device according to an embodiment of the present invention. Detailed Implementation

[0020] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] The terms "first," "second," etc., used in this embodiment of the invention are used to distinguish similar objects, not to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that embodiments of the invention can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first" and "second" are generally of the same class, without limiting the number of objects; for example, the first object can be one or more. Furthermore, in this embodiment of the invention, "or" indicates at least one of the connected objects. For example, "A or B" covers three scenarios: Scenario 1: includes A but does not include B; Scenario 2: includes B but does not include A; Scenario 3: includes both A and B. The character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0022] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0023] This invention provides a wafer inspection method, see [link to relevant documentation]. Figure 1 As shown, Figure 1 This is a schematic flowchart of a wafer inspection method according to an embodiment of the present invention, including: Step S11: Acquire optical signals characterizing the morphology of the wafer edge; Step S12: Determine the location of wafer notches or chipping at the wafer edge based on the changes in light intensity or photosensitive area at various locations on the wafer edge.

[0024] In some embodiments, a detection device may be used to acquire optical signals characterizing the morphology of the wafer edge, see [link to relevant documentation]. Figure 2 and Figure 3 As shown, the detection device includes: a wafer carrier stage 1, a light emitter 3, and a light receiver 4; The wafer carrier stage 1 is used to carry the wafer 2 and drive the wafer 2 to rotate around the axis of the wafer 2. The light emitter 3 is located on one side of the thickness direction of the wafer 2, and the light receiver 4 is located on the other side of the thickness direction of the wafer 2. Furthermore, the light receiver 4 is located directly opposite the light emitter 3. When the wafer carrier stage 1 drives the wafer 2 it carries to rotate around the axis of the wafer 2, the light emitter 3 emits a light beam toward the wafer 2 that covers at least the edge of the wafer 2, and the light receiver 4 receives the light beam emitted by the light emitter 3 that passes through the wafer 2 and generates an optical signal.

[0025] The edge of wafer 2 has a wafer notch 21.

[0026] In some embodiments, the light emitter can be a laser emitter, and the light receiver can be a laser receiver.

[0027] In some embodiments, see Figure 4 As shown, the detection device may also include a lens 5; Lens 5 is located at the beam receiving end of optical receiver 4 and is used to convert the beam emitted by optical transmitter 3 through wafer 2 into a parallel beam, and then guide the parallel beam from the beam receiving end into optical receiver 4.

[0028] In some embodiments, the lens can be either a convex lens or a concave lens. In practical applications, the user can choose to use a convex lens or a concave lens based on the distance from the lens to the light emitter and the focal position of the lens; this invention does not impose any restrictions on this.

[0029] The light beam emitted by the light emitter is refracted within the wafer, causing the beam to be non-perpendicular to the wafer surface, resulting in inaccurate measurement of the photosensitive area by the optical signal. By incorporating a lens, the accuracy of the photosensitive area measured by the optical signal can be improved, thereby increasing the accuracy of determining the wafer notch.

[0030] In some embodiments, see Figure 2 As shown, the wafer carrier stage may also include: multiple adsorption modules 6; Multiple adsorption modules 6 are arranged at intervals on the wafer carrier stage 1 for adsorbing and fixing the wafer 2.

[0031] In some embodiments, the wafer carrier stage may further include: a robotic arm; The robotic arm is used to place wafer 2 on wafer carrier 1, or to remove wafer 2 from wafer carrier 1.

[0032] Optionally, the detection device may also include: an early warning device; When the intensity of light received by the light receiver 4 or the photosensitive area changes, a warning signal is issued.

[0033] Optionally, the warning device sends a warning signal to the controller of the wafer carrier stage; After receiving the warning signal, the controller of wafer carrier 1 controls wafer carrier 1 to stop rotating, thus completing the detection of wafer notches.

[0034] The detection device of this application embodiment, by setting multiple adsorption modules 6, can fix the wafer 2 during the rotation of the wafer carrier 1, and prevent the wafer 2 from falling off the wafer carrier 1; by using a robotic arm, it can realize automatic wafer picking and placing, thereby realizing automated detection; by using an early warning device, it can issue an early warning signal when a wafer notch is detected, stop the rotation of the wafer 2, and improve detection efficiency.

[0035] It should be noted that the light intensity of the optical signal is the light intensity of the beam emitted by the optical transmitter, passing through the wafer, and projected onto the optical receiver, measured in watts (W) or lumens (lm). The photosensitive area of ​​the optical signal is the area of ​​the beam emitted by the optical transmitter, passing through the wafer, and projected onto the optical receiver. Understandably, during one revolution of the wafer, the beam emitted by the optical transmitter will completely cover the edge of the wafer, thus obtaining the optical signal at each location on the wafer edge. Furthermore, based on the changes in the light intensity or photosensitive area of ​​the optical signal at each location on the wafer edge, the location of wafer notches or chipping can be determined.

[0036] It should be noted that during the process of the wafer being rotated by the wafer carrier stage, the light intensity and photosensitive area received by the light receiver when the light beam emitted by the light emitter passes through the wafer and the wafer notch are different.

[0037] Specifically, when the light beam passes through the edge of the wafer (including defect-free edges and edges with chipped edges), the light beam is absorbed or refracted by the wafer, and the light intensity on the light receiver is less than the light intensity of the light beam emitted by the light emitter; when the light beam passes through the wafer notch, the light beam is directly projected onto the light receiver, and the light intensity on the light receiver is almost equal to the light intensity of the light beam emitted by the light emitter.

[0038] When the light beam passes through the edge of the wafer (including defect-free edges and edges with chipped edges), the photosensitive area on the photoreceptor is as follows: Figure 5The area of ​​P is shown; when the light beam passes through the wafer notch, the photosensitive area on the photoreceiver is as shown. Figure 6 The area of ​​Q is shown, meaning that the photosensitive area on the photoreceiver when the beam passes through the wafer notch is greater than the photosensitive area on the photoreceiver when the beam passes through the wafer edge.

[0039] In this embodiment of the invention, optical signals characterizing the morphology of the wafer edge are acquired; based on the changes in light intensity or photosensitive area at various locations on the wafer edge, the location of wafer notches or chipping is determined. This invention uses the changes in light intensity or photosensitive area at various locations on the wafer edge as the basis for determining the location of wafer notches or chipping, avoiding detection omissions or misjudgments caused by single-point detection. This invention achieves high accuracy in determining the location of wafer notches or chipping. The detection method of this embodiment can determine the location of wafer notches or chipping with high accuracy, avoiding the need for multiple detections or manual intervention, improving wafer processing efficiency, and also contributing to improved wafer product quality.

[0040] In some embodiments of the present invention, optionally, the location of a wafer notch or chipping at the wafer edge is determined based on changes in light intensity or photosensitive area at various locations along the wafer edge, including: The change in light intensity is compared with a preset threshold range for light intensity variation that characterizes wafer notches. If the change in light intensity exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in light intensity does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge. or, The change in photosensitive area is compared with a preset threshold range for the change in photosensitive area that characterizes wafer notches. If the change in photosensitive area exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in photosensitive area does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge.

[0041] In this embodiment of the invention, the user can set specific wafer notch dimensions for the processing and manufacturing requirements of wafers of different specifications. That is, for a specific wafer specification, the fluctuation of the light signal intensity will not exceed the light intensity variation range threshold (this threshold depends on the user-set wafer notch dimensions), and the fluctuation of the photosensitive area of ​​the light signal will not exceed the photosensitive area variation range threshold (this threshold depends on the user-set wafer notch dimensions). Therefore, during wafer rotation, if the light signal intensity at a certain moment or position exceeds the light intensity variation range threshold, it indicates wafer edge chipping; if the photosensitive area of ​​the light signal at a certain moment or position exceeds the photosensitive area variation range threshold, it indicates wafer edge chipping. For example, the light intensity variation range threshold M satisfies: A≤M≤B. During wafer rotation, if the light signal intensity at a certain moment or position is <A, or if the light signal intensity at a certain moment or position is >B, the light signal intensity exceeds the light intensity variation range threshold, indicating wafer edge chipping. The following is a description with reference to specific embodiments: Example

[0042] The 300mm wafer is mounted on such a platform. Figure 2 The wafer carrier 1 of the detection device is used to rotate the wafer around its own axis. The light emitter 3 is turned on to emit a light beam to illuminate the edge of the wafer. The light intensity value of the wafer after one rotation is collected by the light receiver 4. The light intensity value in the chipped edge area is >20 or <18, which is higher or lower than the light intensity threshold of 18~20lm, thus confirming that the wafer has chipped edge. Example

[0043] The 300mm wafer is mounted on such a platform. Figure 2 The wafer carrier 1 of the detection device is used to rotate the wafer around its own axis. The light emitter 3 is turned on to emit a light beam to illuminate the edge of the wafer. The light receiver 4 collects the photosensitive area of ​​the wafer after one rotation. The photosensitive area in the chipped edge area is <3 or >5, which is higher than the photosensitive area threshold of 3~5mm², thus confirming that the wafer has chipped edges.

[0044] In some embodiments of the present invention, optionally, the location of a wafer notch or chipping at the wafer edge is determined based on changes in light intensity or photosensitive area at various locations along the wafer edge, including: Determine the starting and ending points of the change in light intensity of the optical signal at the edge of the wafer; The location of the wafer notch or chipping is determined by the starting and ending points of the change. It should be noted that the light intensity of the optical signal remains basically constant when the light beam passes through an edge without a wafer notch. However, when the light beam passes through a wafer notch, the light intensity of the optical signal changes due to interference from the wafer notch. Therefore, the location of the wafer notch or chipped edge can be determined based on the starting and ending positions of the change.

[0045] In some embodiments of the present invention, optionally, the location of a wafer notch or chipping at the wafer edge is determined based on changes in light intensity or photosensitive area at various locations along the wafer edge, including: Determine the start and end times of the change in light intensity of the optical signal at the edge of the wafer; The location of wafer notches or edge breakages is determined based on the starting and ending times of the change.

[0046] It should be noted that the light intensity of the optical signal remains basically constant when the light beam passes through an edge without a wafer notch. When the light beam passes through a wafer notch, the light intensity of the optical signal changes due to interference from the wafer notch. Therefore, the location of the wafer notch or chipped edge can be determined based on the start and end times of the change.

[0047] In some embodiments of the present invention, optionally, The starting point of the change includes: a first starting point of the change in light intensity from low to high, and a second starting point of the change in light intensity from high to low; The endpoint of the change includes: a first endpoint where the light intensity changes from low to high to a preset high intensity, and a second endpoint where the light intensity changes from high to low to a preset low intensity; Based on the starting and ending points of the change, determine the location of the wafer notch or chipping, including: The location of the wafer notch or edge chipping is determined based on the first change start position, the first change end position, the second change start position, and the second change end position.

[0048] See Figure 7 As shown, the preset low intensity is light intensity A. This means that when the wafer notch is not rotated into the range of the light beam emitted by the light emitter, the light beam, after refraction and blocking at the edge of the wafer, results in light intensity A on the light receiver. The preset high intensity is light intensity B. This means that when the wafer notch is rotated into the range of the light beam emitted by the light emitter, the light beam can pass through the wafer notch; that is, the wafer's blocking of the light beam is reduced, and the light intensity on the light receiver increases to light intensity B.

[0049] Specifically, as the wafer rotates, the wafer notch begins to enter the beam range emitted by the light emitter (starting from position X1 on the wafer circumference (i.e., the first change starting point position)). The portion of the beam that is refracted and blocked begins to decrease, and the light intensity on the light receiver increases from A. As the wafer continues to rotate, when the beam emitted by the light emitter completely covers the wafer notch, the portion of the beam that is refracted and blocked continues to decrease until it reaches a constant value (the light intensity corresponding to positions X2 (i.e., the first change ending point) to X3 (i.e., the second change starting point position) on the wafer circumference), and the light intensity on the light receiver increases from A to B.

[0050] Then the wafer continues to rotate. When the wafer notch is completely out of the range of the light beam emitted by the light emitter, the part of the light beam that is refracted and blocked continues to increase until it reaches a constant value (the light intensity corresponding to position X4 on the wafer circumference (i.e., the second change endpoint position)). The light intensity on the light receiver decreases from B to A.

[0051] By observing the changes in light intensity, we can determine that the half point of region B is the center point of the wafer notch. That is, the center point of the wafer notch = (X3-X2) / 2, thus determining the location of the wafer notch or chipped edge.

[0052] In this embodiment of the invention, the change starting position includes: a first change starting position where the light intensity changes from low to high, and a second change starting position where the light intensity changes from high to low; the change ending position includes: a first change ending position where the light intensity changes from low to high to a preset high intensity, and a second change ending position where the light intensity changes from high to low to a preset low intensity; determining the position of the wafer notch or chipped edge based on the change starting position and the change ending position includes: determining the position of the wafer notch or chipped edge based on the first change starting position, the first change ending position, the second change starting position, and the second change ending position, thereby improving the accuracy of wafer notch detection.

[0053] In some embodiments of the present invention, optionally, The starting point of the change includes: the first starting point of the change in light intensity from low to high, and the second starting point of the change in light intensity from high to low; The endpoint of the change includes: a first endpoint when the light intensity changes from low to high to a preset high intensity, and a second endpoint when the light intensity changes from high to low to a preset low intensity; Based on the start and end times of the change, determine the location of the wafer notch or chipping, including: The location of the wafer notch or chipping is determined based on the first change start time, the first change end time, the second change start time, and the second change end time.

[0054] See Figure 7 As shown, the preset low intensity is light intensity A. This means that when the wafer notch is not rotated into the range of the light beam emitted by the light emitter, the light beam, after refraction and blocking at the edge of the wafer, results in light intensity A on the light receiver. The preset high intensity is light intensity B. This means that when the wafer notch is rotated into the range of the light beam emitted by the light emitter, the light beam can pass through the wafer notch; that is, the wafer's blocking of the light beam is reduced, and the light intensity on the light receiver increases to light intensity B.

[0055] Specifically, the rotation function of the wafer carrier stage is activated synchronously with the light emitter and the light receiver, and the activation time is a target time point; at the target time point, the wafer notch has not rotated into the range of the light beam emitted by the light emitter, the light beam is refracted and blocked by the edge of the wafer, and the light intensity on the light receiver is A; As the wafer carrier rotates the wafer to time point T1 (the starting point of the first change), the wafer notch begins to enter the range of the light beam emitted by the light emitter. The portion of the light beam that is refracted and blocked begins to decrease, and the light intensity on the light receiver increases from A. As the wafer continues to rotate until time point T2 (the ending point of the first change), the light beam emitted by the light emitter completely covers the wafer notch. The portion of the light beam that is refracted and blocked continues to decrease until it reaches a constant value, and the light intensity on the light receiver increases from A to B. The wafer continues to rotate until time point T3 (the starting point of the second change). The wafer notch gradually moves away from the beam range emitted by the light emitter, and the portion of the beam that is refracted and blocked begins to increase. The light intensity on the light receiver decreases from B. The wafer continues to rotate until time point T4 (the ending point of the second change). When the wafer notch completely moves away from the beam range emitted by the light emitter, the portion of the beam that is refracted and blocked continues to increase until it reaches a constant value. The light intensity on the light receiver decreases from B to A.

[0056] Based on the changes in light intensity, we can determine that the half point of region B is the moment when the light beam is projected onto the center point of the wafer notch. That is, the moment when the light beam is projected onto the center point of the wafer notch = (T3-T2) / 2. Then, we determine the position corresponding to the moment when the light beam is projected onto the center point of the wafer notch as the position of the wafer notch or edge breakage.

[0057] In this embodiment of the invention, the starting time of change includes: a first starting time when the light intensity changes from low to high, and a second starting time when the light intensity changes from high to low; the ending time of change includes: a first ending time when the light intensity changes from low to high to a preset high intensity, and a second ending time when the light intensity changes from high to low to a preset low intensity; determining the location of the wafer notch or chipped edge based on the starting time and ending time of change includes: determining the location of the wafer notch or chipped edge based on the first starting time, the first ending time, the second starting time, and the second ending time of change, thereby improving the accuracy of wafer notch detection.

[0058] In some embodiments of the present invention, optionally, the location of a wafer notch or chipping at the wafer edge is determined based on changes in light intensity or photosensitive area at various locations along the wafer edge, including: Determine the starting and ending points of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; Determine the location of wafer notches or chipped edges based on the starting and ending positions.

[0059] It should be noted that when the light beam passes through an edge without a wafer notch, the photosensitive area of ​​the optical signal remains basically constant. When the light beam passes through a wafer notch, the photosensitive area increases. Therefore, the location of the wafer notch or chipped edge can be determined based on the starting and ending positions.

[0060] In some embodiments of the present invention, optionally, the location of a wafer notch or chipping at the wafer edge is determined based on changes in light intensity or photosensitive area at various locations along the wafer edge, including: Determine the start and end times of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The location of wafer notches or chipping is determined based on the start and end times.

[0061] It should be noted that when the light beam passes through an edge without a wafer notch, the photosensitive area of ​​the optical signal remains basically constant. When the light beam passes through a wafer notch, the photosensitive area increases. Therefore, the location of the wafer notch or chipped edge can be determined based on the start and end times.

[0062] In some embodiments of the present invention, optionally, The starting point position includes: the first starting point position where the photosensitive area begins to change from small to large, and the second starting point position where the photosensitive area begins to change from large to small; The endpoint positions include: a first endpoint position where the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint position where the photosensitive area changes from large to small to a preset small photosensitive area. Based on the starting and ending positions, determine the location of the wafer notch or chipping, including: The location of the wafer notch or chipping is determined based on the first starting point position, the first ending point position, the second starting point position, and the second ending point position.

[0063] See Figure 7 As shown, the preset small photosensitive area is the photosensitive area A. This means that when the wafer notch is not rotated into the range of the light beam emitted by the light emitter, the light beam, after refraction and blocking at the edge of the wafer, reaches the photosensitive area A on the light receiver. The preset large photosensitive area is the photosensitive area B. This means that when the wafer notch is rotated into the range of the light beam emitted by the light emitter, the light beam can pass through the wafer notch; that is, the wafer's blocking of the light beam is reduced, and the photosensitive area on the light receiver increases to the photosensitive area B.

[0064] Specifically, as the wafer rotates, the wafer notch begins to enter the beam range emitted by the light emitter (starting from position X1 on the wafer circumference (i.e., the first starting point position)). The portion of the beam that is refracted and blocked begins to decrease, and the photosensitive area on the light receiver increases from A. As the wafer continues to rotate, when the beam emitted by the light emitter completely covers the wafer notch, the portion of the beam that is refracted and blocked continues to decrease until it reaches a constant value (the photosensitive area corresponding to positions X2 (i.e., the first ending point) to X3 (i.e., the second starting point position) on the wafer circumference), and the photosensitive area on the light receiver increases from A to B.

[0065] Then the wafer continues to rotate. When the wafer notch is completely out of the range of the light beam emitted by the light emitter, the part of the light beam that is refracted and blocked continues to increase until it reaches a constant value (the light intensity corresponding to position X4 (i.e., the second endpoint position) on the wafer circumference). The photosensitive area on the light receiver decreases from B to A.

[0066] By observing the changes in the photosensitive area, we can determine that the half point of region B is the center point of the wafer notch. That is, the center point of the wafer notch = (X3-X2) / 2, thus determining the location of the wafer notch or chipped edge.

[0067] In this embodiment of the invention, the starting position includes: a first starting position where the photosensitive area begins to change from small to large, and a second starting position where the photosensitive area begins to change from large to small; the ending position includes: a first ending position where the photosensitive area changes from small to large to a preset large photosensitive area, and a second ending position where the photosensitive area changes from large to small to a preset small photosensitive area; determining the location of the wafer notch or chip based on the starting position and the ending position includes: determining the location of the wafer notch or chip based on the first starting position, the first ending position, the second starting position, and the second ending position, thereby improving the accuracy of wafer notch detection.

[0068] In some embodiments of the present invention, optionally, The starting point includes: the first starting point when the photosensitive area begins to change from small to large, and the second starting point when the photosensitive area begins to change from large to small; The endpoint moments include: the first endpoint moment when the photosensitive area changes from small to large to a preset large photosensitive area, and the second endpoint moment when the photosensitive area changes from large to small to a preset small photosensitive area. Based on the start and end times, determine the location of the wafer notch or chipping, including: The location of the wafer notch or chipping is determined based on the first starting time, the first ending time, the second starting time, and the second ending time.

[0069] See Figure 7 As shown, the preset small photosensitive area is the photosensitive area A. This means that when the wafer notch is not rotated into the range of the light beam emitted by the light emitter, the light beam, after refraction and blocking at the edge of the wafer, reaches the photosensitive area A on the light receiver. The preset large photosensitive area is the photosensitive area B. This means that when the wafer notch is rotated into the range of the light beam emitted by the light emitter, the light beam can pass through the wafer notch; that is, the wafer's blocking of the light beam is reduced, and the photosensitive area on the light receiver increases to the photosensitive area B.

[0070] Specifically, the rotation function of the wafer carrier stage is activated synchronously with the light emitter and the light receiver, and the activation time is a target time point; at the target time point, the wafer notch has not rotated into the range of the light beam emitted by the light emitter, and the light beam is refracted and blocked by the edge of the wafer, and the photosensitive area on the light receiver is A; As the wafer carrier rotates the wafer to time point T1 (the first starting moment), the wafer notch begins to enter the range of the light beam emitted by the light emitter. The portion of the light beam that is refracted and blocked begins to decrease, and the photosensitive area on the light receiver increases from A. As the wafer continues to rotate until time point T2 (the first ending moment), the light beam emitted by the light emitter completely covers the wafer notch. The portion of the light beam that is refracted and blocked continues to decrease until it reaches a constant value, and the photosensitive area on the light receiver increases from A to B. The wafer continues to rotate until time point T3 (the second starting point). The wafer notch gradually moves away from the beam range emitted by the light emitter, and the portion of the beam that is refracted and blocked begins to increase. The photosensitive area on the light receiver decreases from B. The wafer continues to rotate until time point T4 (the second ending point). When the wafer notch completely moves away from the beam range emitted by the light emitter, the portion of the beam that is refracted and blocked continues to increase until it reaches a constant value. The photosensitive area on the light receiver decreases from B to A.

[0071] By observing the changes in the photosensitive area, we can determine that the half point of region B is the moment when the light beam is projected onto the center point of the wafer notch. That is, the moment when the light beam is projected onto the center point of the wafer notch = (T3-T2) / 2. Then, we determine the position corresponding to the moment when the light beam is projected onto the center point of the wafer notch as the position of the wafer notch or edge breakage.

[0072] In this embodiment of the invention, the starting time includes a first starting time when the photosensitive area begins to change from small to large, and a second starting time when the photosensitive area begins to change from large to small; the ending time includes a first ending time when the photosensitive area changes from small to large to a preset large photosensitive area, and a second ending time when the photosensitive area changes from large to small to a preset small photosensitive area; determining the location of the wafer notch or chip based on the starting time and the ending time includes determining the location of the wafer notch or chip based on the first starting time, the first ending time, the second starting time, and the second ending time, thereby improving the accuracy of wafer notch detection.

[0073] This invention provides a wafer inspection device, see [link to relevant documentation]. Figure 8 As shown, Figure 8 This is a schematic block diagram of a wafer inspection device according to an embodiment of the present invention. The wafer inspection device 80 includes: Acquisition module 81 is used to acquire optical signals that characterize the morphology of the wafer edge; The execution module 82 is used to determine the location of wafer notches or chipping at the wafer edge based on the changes in light intensity or photosensitive area of ​​the light signal at various locations on the wafer edge.

[0074] In some embodiments of the present invention, optionally, the execution module 82 is further configured to compare the change in light intensity with a preset light intensity change range threshold characterizing a wafer notch; if the change in light intensity exceeds the light intensity change range threshold, it is determined that there is a chipping edge at the wafer edge; if the change in light intensity does not exceed the light intensity change range threshold, it is determined that there is a wafer notch at the wafer edge. In some embodiments of the present invention, optionally, the execution module 82 is further configured to compare the change in photosensitive area with a preset photosensitive area change range threshold characterizing wafer notches; if the change in photosensitive area exceeds the photosensitive area change range threshold, it is determined that there is edge chipping at the wafer edge; if the change in photosensitive area does not exceed the photosensitive area change range threshold, it is determined that there is wafer notches at the wafer edge.

[0075] In some embodiments of the present invention, optionally, the execution module 82 is further configured to determine the starting point and ending point of the change in the light intensity of the optical signal on the wafer edge; The execution module 82 is further configured to determine the location of the wafer notch or chip based on the change start point position and the change end point position; In some embodiments of the present invention, optionally, the execution module 82 is further configured to determine the start time and the end time of the change in the light intensity of the optical signal at the edge of the wafer; The execution module 82 is further configured to determine the location of the wafer notch or chipping edge based on the change start time and the change end time.

[0076] In some embodiments of the present invention, optionally, the change starting position includes: a first change starting position where the light intensity changes from low to high, and a second change starting position where the light intensity changes from high to low; The endpoint of the change includes: a first endpoint where the light intensity changes from low to high to a preset high intensity, and a second endpoint where the light intensity changes from high to low to a preset low intensity. The execution module 82 is further configured to determine the location of the wafer notch or chipping edge based on the first change start position, the first change end position, the second change start position, and the second change end position.

[0077] In some embodiments of the present invention, optionally, the starting time of the change includes: a first starting time when the light intensity changes from low to high, and a second starting time when the light intensity changes from high to low; The endpoint of the change includes: a first endpoint when the light intensity changes from low to high to a preset high intensity, and a second endpoint when the light intensity changes from high to low to a preset low intensity. The execution module 82 is further configured to determine the location of the wafer notch or chipping edge based on the first change start time, the first change end time, the second change start time, and the second change end time.

[0078] In some embodiments of the present invention, optionally, the execution module 82 is further configured to determine the starting position and the ending position of the change of the photosensitive area of ​​the optical signal on the wafer edge; The execution module 82 is further configured to determine the location of the wafer notch or chip based on the starting point position and the ending point position; In some embodiments of the present invention, optionally, the execution module 82 is further configured to determine the start time and the end time of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The execution module 82 is further configured to determine the location of the wafer notch or chip based on the start time and the end time.

[0079] In some embodiments of the present invention, optionally, the starting position includes: a first starting position where the photosensitive area begins to change from small to large, and a second starting position where the photosensitive area begins to change from large to small; The endpoint positions include: a first endpoint position where the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint position where the photosensitive area changes from large to small to a preset small photosensitive area. The execution module 82 is further configured to determine the location of the wafer notch or chipped edge based on the first starting position, the first ending position, the second starting position, and the second ending position.

[0080] In some embodiments of the present invention, optionally, the starting point time includes: a first starting point time when the photosensitive area begins to change from small to large, and a second starting point time when the photosensitive area begins to change from large to small; The endpoint time includes: a first endpoint time when the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint time when the photosensitive area changes from large to small to a preset small photosensitive area. The execution module 82 is further configured to determine the location of the wafer notch or chipped edge based on the first starting time, the first ending time, the second starting time, and the second ending time.

[0081] The wafer inspection device provided in this embodiment of the invention can achieve Figures 1 to 7 The various processes implemented in the method embodiments achieve the same technical effect, and will not be described again here to avoid repetition.

[0082] This invention provides an electronic device 90, see [link to relevant documentation]. Figure 9 As shown, Figure 9 This is a schematic block diagram of an electronic device 90 according to an embodiment of the present invention, including a processor 91, a memory 92, and a program or instructions stored in the memory 92 and executable on the processor 91. When the program or instructions are executed by the processor, they implement the steps in any wafer inspection method of the present invention.

[0083] This invention provides a readable storage medium on which a program or instruction is stored. When the program or instruction is executed by a processor, it implements the various processes of the wafer inspection method embodiment as described above and achieves the same technical effect. To avoid repetition, it will not be described again here.

[0084] The readable storage medium may include, for example, read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk. In some examples, the readable storage medium may be a non-transient readable storage medium.

[0085] This invention also provides a computer program product, including computer instructions. When the computer instructions are executed by a processor, they implement the various processes of any of the above-described wafer inspection method embodiments and achieve the same technical effect. To avoid repetition, they will not be described again here.

[0086] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0087] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of the present invention.

[0088] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A wafer inspection method, characterized in that, include: Acquire optical signals characterizing the morphology of the wafer edge; Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations on the wafer edge, the location of wafer notches or chipping can be determined.

2. The wafer inspection method according to claim 1, characterized in that, Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations along the wafer edge, the location of wafer notches or chipping is determined, including: The change in light intensity is compared with a preset threshold range for light intensity change that characterizes wafer notches. If the change in light intensity exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in light intensity does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge. or, The change in photosensitive area is compared with a preset threshold range for the change in photosensitive area that characterizes wafer notches. If the change in photosensitive area exceeds the threshold range, it is determined that there is edge chipping at the wafer edge; if the change in photosensitive area does not exceed the threshold range, it is determined that there is a wafer notch at the wafer edge.

3. The wafer inspection method according to claim 1, characterized in that, Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations along the wafer edge, the location of wafer notches or chipping is determined, including: Determine the starting and ending points of the change in light intensity of the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting point and ending point of the change. or, Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations along the wafer edge, the location of wafer notches or chipping is determined, including: Determine the start and end times of the change in the light intensity of the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting time and ending time of the change.

4. The wafer inspection method according to claim 3, characterized in that, The change starting point position includes: a first change starting point position where the light intensity changes from low to high, and a second change starting point position where the light intensity changes from high to low; The endpoint of the change includes: a first endpoint where the light intensity changes from low to high to a preset high intensity, and a second endpoint where the light intensity changes from high to low to a preset low intensity. Determining the location of the wafer notch or chipping edge based on the starting and ending positions of the change includes: The location of the wafer notch or chipped edge is determined based on the first change start position, the first change end position, the second change start position, and the second change end position.

5. The wafer inspection method according to claim 3, characterized in that, The starting point of the change includes: a first starting point of the change when the light intensity changes from low to high, and a second starting point of the change when the light intensity changes from high to low; The endpoint of the change includes: a first endpoint when the light intensity changes from low to high to a preset high intensity, and a second endpoint when the light intensity changes from high to low to a preset low intensity. Determining the location of the wafer notch or chipping edge based on the starting time and ending time of the change includes: The location of the wafer notch or chipped edge is determined based on the first change start time, the first change end time, the second change start time, and the second change end time.

6. The wafer inspection method according to claim 1, characterized in that, Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations along the wafer edge, the location of wafer notches or chipping is determined, including: Determine the starting and ending positions of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the starting point and the ending point. or, Based on the changes in light intensity or photosensitive area of ​​the optical signal at various locations along the wafer edge, the location of wafer notches or chipping is determined, including: Determine the start and end times of the change in the photosensitive area of ​​the optical signal at the edge of the wafer; The location of the wafer notch or chipped edge is determined based on the start time and the end time.

7. The wafer inspection method according to claim 6, characterized in that, The starting point position includes: a first starting point position where the photosensitive area begins to change from small to large, and a second starting point position where the photosensitive area begins to change from large to small; The endpoint positions include: a first endpoint position where the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint position where the photosensitive area changes from large to small to a preset small photosensitive area. Determining the location of the wafer notch or chipped edge based on the starting point and the ending point includes: The location of the wafer notch or chipped edge is determined based on the first starting position, the first ending position, the second starting position, and the second ending position.

8. The wafer inspection method according to claim 6, characterized in that, The starting point time includes: the first starting point time when the photosensitive area begins to change from small to large, and the second starting point time when the photosensitive area begins to change from large to small; The endpoint time includes: a first endpoint time when the photosensitive area changes from small to large to a preset large photosensitive area, and a second endpoint time when the photosensitive area changes from large to small to a preset small photosensitive area. Determining the location of the wafer notch or chipping based on the start time and the end time includes: The location of the wafer notch or chipped edge is determined based on the first starting time, the first ending time, the second starting time, and the second ending time.

9. A wafer inspection device, characterized in that, include: The acquisition module is used to acquire optical signals that characterize the morphology of the wafer edge; The execution module is used to determine the location of wafer notches or chipping at the wafer edge based on the changes in light intensity or photosensitive area of ​​the light signal at various locations on the wafer edge.

10. An electronic device, characterized in that: It includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the wafer inspection method as described in any one of claims 1 to 8.

11. A readable storage medium, characterized in that: The readable storage medium stores a program or instructions that, when executed by a processor, implement the steps of the wafer inspection method as described in any one of claims 1 to 8.

12. A computer program product, characterized in that, It includes computer instructions that, when executed by a processor, implement the steps of the wafer inspection method as described in any one of claims 1 to 8.

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