Adjustable and non-adjustable heat shield for influencing temperature profile of substrate support

Abstract

A heat shield for a platen of a substrate support includes a body and an absorption-reflection-transmission region. The absorption-reflection-transmission region is in contact with the body and is configured to at least one of affect or adjust at least a portion of a heat flow pattern between a distal reference surface and the platen. The absorption-reflection-transmission region includes an adjustable aspect to adjust the at least a portion of the heat flow pattern.

Description

[0001] This application is a divisional application of the invention patent application with application number 202080067825.9, application date September 24, 2020, entitled "Adjustable and non-adjustable thermal screens for influencing the temperature distribution profile of a substrate support".

[0002] Cross-reference to related applications This application claims the benefits of U.S. Provisional Application No. 62 / 907,082, filed September 27, 2019, and U.S. Provisional Application No. 62 / 951,395, filed December 20, 2019. The entire disclosure of the above-cited applications is incorporated herein by reference. Technical Field

[0003] This disclosure relates to thermal shielding for substrate processing systems. Background Technology

[0004] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors, within the scope described in this background section and in the various aspects of the specification that could not be identified as prior art at the time of filing, neither expressly nor impliedly acknowledges that it is prior art to this disclosure.

[0005] Substrate processing systems can be used to process substrates such as semiconductor wafers. Examples of substrate processing include etching, deposition, etc. During processing, the substrate is placed on a substrate support (e.g., an electrostatic chuck (ESC) or a vacuum chuck), and one or more processing gases can be directed into the processing chamber.

[0006] One or more process gases can be transported to the processing chamber via a gas transport system. In some systems, the gas transport system includes a manifold connected to a nozzle located within the processing chamber. For example, during plasma-enhanced chemical vapor deposition (PECVD) processing, a substrate can be placed on an ESC or vacuum chuck within a substrate processing system, and a thin film can be deposited on the substrate. This process involves a chemical reaction that occurs after the formation of plasma by reactant gases and the discharge of radio frequency (RF) alternating current (AC) or direct current (DC). Summary of the Invention

[0007] A heat shield is provided for a stage of a substrate support. The heat shield includes a body and absorption-reflection-transmission regions. The absorption-reflection-transmission regions are in contact with the body and configured to influence at least a portion of a heat flow pattern between a distal reference surface and the stage. The plurality of absorption-reflection-transmission regions include adjustable aspects to adjust the at least a portion of the heat flow pattern.

[0008] Among other features, the absorption-reflection-transmission region is configured to influence at least a portion of the heat flow pattern between the distal reference surface and the platform. Among other features, the body has a modular structure including the absorption-reflection-transmission region. Among other features, one or more of the absorption-reflection-transmission region includes one or more apertures. Among other features, one or more of the absorption-reflection-transmission region includes at least one of the following: (i) one or more ridges, or (ii) one or more grooves.

[0009] Among other features, one or more of the absorption-reflection-transmission regions include at least one of the following: (i) multiple layers of different thicknesses, or (ii) multiple layers of different materials. Among other features, one or more of the absorption-reflection-transmission regions are implemented as at least one of different capping layers or radially adjacent layers. Among other features, the absorption-reflection-transmission regions are implemented as segments, which are at least one of adjustable, movable, interchangeable, or replaceable to adjust the heat flow pattern.

[0010] Among other features, the body is configured to be attached to the shaft at a location between the stage and the distal reference surface, the distal reference surface being either a surface of the chamber wall or another surface affecting the radiation boundary state. Among other features, one or more of the absorption-reflection-transmission regions are adjustable to control the azimuth and radial temperature non-uniformity of at least one of the stage or substrate.

[0011] Among other features, the body is configured to attach to a shaft at a location between the platform and the distal reference surface, which is the surface of the treatment chamber wall. Among other features, one or more of the absorption-reflection-transmission regions are adjustable to control the azimuth angle and radial temperature non-uniformity of the platform.

[0012] Among other features, the plurality of absorption-reflection-transmission regions are disposed at different azimuth or radial positions on the body. Among other features, one or more of the absorption-reflection-transmission regions have at least one shape, size, material, contour, or pattern that differs from another or more of the plurality of absorption-reflection-transmission regions.

[0013] Among other features, a heat shield is provided for a stage for a substrate support. The heat shield includes a body and an absorption-reflection-transmission portion. The absorption-reflection-transmission portion is in contact with or part of the body and is configured to influence at least a portion of the heat flow pattern between a distal reference surface and the stage. One or more of the absorption-reflection-transmission portions include at least one heat flow variation characteristic different from another of the absorption-reflection-transmission portions.

[0014] Among other features, the absorption-reflection-transmission portion is at least one of a dispersed portion, multiple layers, or a covering layer. Among other features, the absorption-reflection-transmission portions are arranged radially or azimuthally relative to each other at least one of the two. Among other features, the absorption-reflection-transmission portions are located at different azimuthal or radial positions on the body.

[0015] Among other features, one or more of the absorption-reflection-transmission portions include one or more apertures. Among other features, one or more of the absorption-reflection-transmission portions include at least one of the following: (i) one or more ridges, or (ii) one or more grooves.

[0016] Among other features, one or more of the absorption-reflection-transmission portions include at least one of multiple thicknesses or different materials. Among other features, one or more of the absorption-reflection-transmission portions are implemented as at least one of different capping layers or radially adjacent layers.

[0017] Among other features, the body is configured to attach to the shaft at a location between the platform and the distal reference surface, which is the surface of the treatment chamber wall. Among other features, the absorption-reflection-transmission section is configured to minimize azimuth and radial temperature non-uniformity of the platform.

[0018] Among other features, one or more of the absorption-reflection-transmission portions have at least one shape, size, material, contour, or pattern that differs from another or more of the absorption-reflection-transmission portions. Among other features, the heat shield also includes a retaining clamp comprising the body. The absorption-reflection-transmission portion is implemented as a segment extending radially outward from the sidewall of the body.

[0019] Among other features, a heat shield is provided for a stage for a substrate support. The heat shield includes a body and an absorption-reflection-transmission region. The absorption-reflection-transmission region contacts the body and is configured to influence or adjust at least a portion of a radiative heat flow transfer pattern between a distal reference surface and the stage. The absorption-reflection-transmission region includes an adjustable aspect to adjust the at least a portion of the radiative heat flow transfer pattern. Among other features, a heat shield is provided for a stage for a substrate support. The heat shield includes a body and a plurality of absorption-reflection-transmission portions. The absorption-reflection-transmission portions contact or are part of the body and are configured to influence or adjust at least a portion of a radiative heat flow transfer pattern between a distal reference surface and the stage. One or more of the absorption-reflection-transmission portions include at least one radiative heat flow transfer characteristic different from another or more of the plurality of absorption-reflection-transmission portions.

[0020] A heat shield is provided for a platform for a substrate support. The heat shield includes a plurality of absorption-reflection-transmission sections and a frame. The frame includes: a central opening configured to receive a central axis of the substrate support; a plurality of radially inwardly projecting portions to engage with a groove on the central axis; and a plurality of windows configured to be at least partially covered by the absorption-reflection-transmission sections at a plurality of designated locations. The absorption-reflection-transmission sections are configured to be disposed in or above at least one of the plurality of windows and are held by the frame. In other features, the absorption-reflection-transmission sections and the frame thermally shield a portion of the processing chamber wall from the platform.

[0021] Among other features, the thermal screen includes a frame. The absorption-reflection-transmission region is implemented as a plurality of absorption-reflection-transmission segments. The frame includes: a central opening configured to receive an axis of the substrate support; and a plurality of windows configured to be at least partially covered by the absorption-reflection-transmission segments in a plurality of designated locations. The body is implemented as the frame. The absorption-reflection-transmission segments are configured to be disposed in or above at least one of the plurality of windows and held by the frame. Among other features, the frame is annular or polygonal. Among other features, the frame includes a plurality of protrusions that engage with hardware components.

[0022] Among other features, the window portion includes a respective edge. The edge is configured to contact or engage with an absorption-reflection-transmission segment at the designated location.

[0023] Among other features, the window portions include respective frame-like portions. The frame-like portions are configured to hold the absorption-reflection-transmission segment in the designated location. The absorption-reflection-transmission segment is configured to be disposed in the plurality of windows and on the frame-like portions.

[0024] Among other features, one or more of the absorption-reflection-transmission sections are reflection sections, reflecting heat energy received from the platform back to the platform. Among other features, one or more of the absorption-reflection-transmission sections are absorption sections, absorbing heat energy emitted by the platform.

[0025] In other features, one or more of the absorption-reflection-transmission sections are transmission sections, and a portion of the heat energy emitted from the platform can pass through one or more of the absorption-reflection-transmission sections to reach the distal reference surface. In other features, one or more of the absorption-reflection-transmission sections are shaped to modify their effect on azimuth temperature non-uniformity across the entire platform. In other features, one or more of the plurality of absorption-reflection-transmission sections are shaped to modify their effect on radial temperature non-uniformity across the entire platform. In other features, the frame is annular.

[0026] Among other features, each of the absorption-reflection-transmission sections is modular and can be positioned in multiple locations within the window. Among other features, at least two of the plurality of absorption-reflection-transmission sections are of different sizes. Among other features, the plurality of absorption-reflection-transmission sections are wedge-shaped. Among other features, the plurality of absorption-reflection-transmission sections are circular.

[0027] Among other features, the frame includes a first portion and a second portion. The first portion includes the plurality of windows. The second portion includes a channel and a ridge. The channel reflects heat energy emitted by the platform back onto the platform. Among other features, at least one of the absorption-reflection-transmission sections is at least partially transparent. Among other features, at least one of the absorption-reflection-transmission sections includes multiple layers.

[0028] Among other features, the plurality of layers includes paired layers and an intermediate layer. Each of the paired layers comprises sapphire. The intermediate layer is disposed between the paired layers. The intermediate layer comprises ceramic.

[0029] Among other features, the layer comprises paired layers and an intermediate layer. Each of the paired layers comprises sapphire. The intermediate layer is disposed between the paired layers. The intermediate layer comprises at least one of ceramic, refractory material, or metal.

[0030] Among other features, the absorption-reflection-transmission segment includes a plurality of keying sides. The frame includes a plurality of keying protrusions for engaging with the keying sides of the absorption-reflection-transmission segment. In another feature, the central opening of the frame is configured to receive at least a first portion of a heat barrier. The frame is configured to be disposed on a second portion of the heat barrier. In yet another feature, each of the windows has a predetermined number of designated areas for one or more of the absorption-reflection-transmission segments.

[0031] Among other features, a heat shield assembly is provided, the heat shield assembly including the heat shield and a first heat barrier. Among other features, the heat shield assembly includes a second heat barrier. The heat shield is configured to be disposed on and engaged with the first heat barrier. The first heat barrier is configured to be disposed on and engaged with the second heat barrier.

[0032] Among other features, a substrate support is provided, the substrate support including the heat shield, the first heat barrier, the central axis, and the platform. The first heat barrier is connected to the central axis. The heat shield is a first heat shield disposed on the first heat barrier.

[0033] Among other features, the substrate support further includes: a second heat barrier connected to the central axis; and a second heat shield disposed on the second heat barrier. In another feature, the innermost radial edge of the heat shield does not contact the central axis.

[0034] Among other features, a heat shield is provided for a platform of a substrate support in a substrate processing system. The heat shield includes an absorption-reflection-transmission region implemented as a plurality of absorption-reflection-transmission segments and a frame. The frame includes a central opening for a central axis and a plurality of windows. The central opening is configured to receive at least a portion of a first thermal barrier. The windows are configured to hold the plurality of absorption-reflection-transmission segments in designated positions. The absorption-reflection-transmission segments are configured to be disposed within or above at least one of the plurality of windows. The absorption-reflection segments and the frame thermally insulate a portion of the processing chamber wall from the platform.

[0035] Among other features, one or more of the absorption-reflection-transmission sections are shaped to alter the effect of the absorption-reflection-transmission sections on azimuth temperature non-uniformity across the entire platform. Among other features, one or more of the absorption-reflection-transmission sections are shaped to alter the effect of the absorption-reflection-transmission sections on radial temperature non-uniformity across the entire platform.

[0036] Among other features, the absorption-reflection-transmission section includes a first absorption-reflection-transmission section and a second absorption-reflection-transmission section. The size of the second absorption-reflection-transmission section is different from the size of the first absorption-reflection-transmission section. Among other features, the first heat barrier is hexagonal.

[0037] Among other features, the heat shield assembly is provided, and it includes the heat shield and the first heat barrier. Among other features, the heat shield assembly includes a second heat barrier configured to be connected to the central axis. The first heat barrier is configured to be disposed on the second heat barrier.

[0038] Among other features, the central opening is hexagonal. At least a portion of the first heat barrier is hexagonal and engages with the central opening. The second heat barrier includes twelve sides. Six of the twelve sides of the second heat barrier are configured to engage with six sides of the first heat barrier.

[0039] Among other features, a heat shield is provided for a stage of a substrate support in a substrate processing system. The heat shield includes a body. The body includes: a central opening for a central axis, wherein the central opening is configured to receive at least a portion of a first heat barrier; a first portion including a first channel and a first ridge, wherein the first channel reflects heat energy emitted by the stage back to the stage; a second portion including a second channel and a second ridge, wherein the second channel transfers heat energy received from the stage to a processing chamber wall; and an overlapping portion disposed between the first portion and the second portion. In other features, the body is configured to thermally shield a portion of the processing chamber wall from the stage. In other features, the overlapping portion does not include a channel.

[0040] Among other features, a heat shield is provided for a stage for a substrate support. The heat shield includes: an absorption-reflection-transmission section; and a holding clamp. The holding clamp includes: a body configured to be connected to a central axis of a substrate processing chamber; and sidewalls having grooves. Each of the grooves is configured to receive a portion of one of the absorption-reflection-transmission sections. The absorption-reflection-transmission section is cantilevered, such that it is supported by a first portion and a second portion of the sidewall, wherein the first portion of the sidewall is located below the absorption-reflection-transmission section, and the second portion is located above it.

[0041] In other features, the groove and the absorption-reflection-transmission section are configured such that each of the absorption-reflection-transmission sections can be held in either of the grooves. In other features, the absorption-reflection-transmission section is wedge-shaped. In other features, the absorption-reflection-transmission section includes a channel hole for mounting the absorption-reflection-transmission section to or removing the absorption-reflection-transmission section from the holding clamp. In other features, the absorption-reflection-transmission section is disposed around the holding clamp to influence the heat flow pattern in 360° around the central axis.

[0042] Among other features, one or more of the plurality of absorption-reflection-transmission portions include at least one of the following: (i) one or more holes, or (ii) one or more pockets.

[0043] Among other features, each of the absorption-reflection-transmission segments has a vertical offset from an adjacent pair of absorption-reflection-transmission segments. Among other features, the absorption-reflection-transmission segments are alternately located in vertical positions around the holding clamp, such that every other absorption-reflection-transmission segment is located in a first vertical position, while the other absorption-reflection-transmission segments are located in a second vertical position; and the second vertical position is higher than the first vertical position.

[0044] Among other features, a method is provided for manufacturing a heat shield for a substrate support. The method includes: designing a first heat shield to provide one or more critical dimensions of a first substrate, including setting a plurality of parameters of the first heat shield to provide predetermined heat flow pattern variation characteristics during use of the first heat shield; fabricating the first heat shield according to the parameters; performing a deposition or etching operation while using the first heat shield to deposit a layer on the first substrate, or to etch a layer of the first substrate; performing a metrology operation to measure the one or more critical dimensions; analyzing data generated as a result of performing the metrology operation; and determining whether to redesign the first heat shield to meet a first predetermined criterion for the one or more critical dimensions.

[0045] Among other features, the method further includes, in response to determining to redesign the first heat shield: adjusting the parameters to provide the predetermined heat flow pattern variation characteristics; fabricating a second heat shield according to the adjusted parameters; performing a deposition or etching operation while using the second heat shield to deposit a layer on a second substrate, or etching a layer on the second substrate; performing metrological operations to measure the one or more critical dimensions; analyzing the data generated as a result of performing the metrological operations; and determining whether to redesign the second heat shield to meet the first predetermined criterion for the one or more critical dimensions.

[0046] Among other features, the method further includes: reconfiguring the first thermal screen to fine-tune one or more of the parameters to set or improve the one or more critical dimensions; performing a deposition or etching operation while using the first thermal screen to deposit a layer on a second substrate, or to etch a layer on the second substrate; performing a metrology operation to measure the one or more critical dimensions; analyzing the data generated as a result of performing the metrology operation; and determining whether to redesign the first thermal screen to meet the first predetermined criteria for the one or more critical dimensions.

[0047] Among other features, fine-tuning one or more parameters of the thermal screen includes at least one of the following: determining the number of multiple absorption-reflection-transmission segments to be included, determining the location of the absorption-reflection-transmission segments on the body of the thermal screen, or determining the type of the absorption-reflection-transmission segments.

[0048] Among other features, the method further includes processing the integral thermal screen based on one or more finely tuned parameters. Among other features, the method further includes processing the integral thermal screen based on the parameters.

[0049] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0050] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which: Figure 1 This is a functional block diagram of a substrate processing system according to an embodiment of the present disclosure, wherein the substrate processing system includes a processing chamber with a heat shield; Figure 2 This is a cross-sectional view of a substrate support according to an embodiment of the present disclosure, wherein the substrate support includes a platform and a heat shield; Figure 3 This is a perspective view of the heat shield and the corresponding wedge-shaped absorption-reflection-transmission (ART) segment according to an embodiment of this disclosure; Figure 4 This is a top view of another heatsink according to an embodiment of the present disclosure, wherein the other heatsink includes a ridged reflective section; Figure 5 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a solid portion without an ART section and another portion with a wedge-shaped heat absorption section. Figure 6 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a solid portion without an ART section and another portion having a circular ART section; Figure 7 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a reflector portion and another portion, wherein the other portion includes a circular ART section; Figure 8 This is a top cross-sectional view of another heat shield according to an embodiment of the present disclosure, wherein the other heat shield has a reflector portion and a emitter portion; Figure 9 yes Figure 8 The bottom perspective of the hotspot.

[0051] Figure 10 yes Figure 8 A partial side-perspective view of the hotspot.

[0052] Figure 11 This is a top view of another heat shield according to an embodiment of the present disclosure, wherein the other heat shield includes wedge-shaped ART sections of the same size and heat barriers; Figure 12This is a top view of another heat shield according to an embodiment of the present disclosure, wherein the other heat shield includes wedge-shaped ART sections of different sizes and heat barriers; Figure 13 yes Figure 11-12 A top-view perspective view of the heat shield frame and heat barriers.

[0053] Figure 14 yes Figure 11-12 A top-down perspective view of the first heat barrier of the heat shield.

[0054] Figure 15 yes Figure 11-12 A top-view perspective view of the second heat barrier of the heat shield.

[0055] Figure 16 It is a top perspective view of a wedge-shaped section according to an embodiment of the present disclosure, wherein the wedge-shaped section is in the form of a plate and has a window portion; Figure 17 It is a top perspective view of a wedge-shaped section according to an embodiment of the present disclosure, wherein the wedge-shaped section has an upper surface with different heights; Figure 18 It is a top perspective view of a wedge-shaped section according to an embodiment of the present disclosure, wherein the wedge-shaped section has two radially inwardly recessed ends; Figure 19 It is a top perspective view of a wedge-shaped section according to an embodiment of the present disclosure, wherein the wedge-shaped section has a thick hollow body; Figure 20 These are perspective views of different wedge-shaped sections according to embodiments of this disclosure; Figure 21 This is a perspective view of another hotspot, which includes several... Figure 17 wedge-shaped section; Figure 22 It is a perspective view of the frame of the hotspot, which includes the locking protrusions used by the ART section; Figure 23 It is a top perspective view of the processing chamber, segmented heat shield, cantilevered ART section, and retaining fixture (not frame) according to an embodiment of the present disclosure, wherein the segmented heat shield has an offset. Figure 24 This is a side view of a substrate support according to an embodiment of the present disclosure, wherein the substrate support includes a platform and a stacked thermal shield; Figure 25 This is a side view of an ART segment according to an embodiment of the present disclosure, wherein the ART segment comprises multiple layers: Figure 26 This is a side perspective view of a non-adjustable heatsink according to another embodiment of this disclosure; Figure 27 This is a flowchart illustrating a method for manufacturing an adjustable heat shield according to another embodiment of this disclosure; Figure 28 This is a flowchart illustrating a method for adjusting an adjustable heatsink according to another embodiment of this disclosure; and Figure 29 This is a flowchart illustrating a method for manufacturing a non-adjustable heat shield according to another embodiment of this disclosure; In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical elements. Detailed Implementation

[0056] During PECVD processing, the stage of the substrate support (sometimes called a base or support) is heated via one or more internal heating elements. The temperature of the substrate support can be approximately 1000°C. A significant temperature difference exists between the substrate support and the processing chamber walls. For example, the chamber walls can be 75°C or lower. Therefore, substantial heat (or energy) loss occurs from the substrate support to the chamber walls and / or to other components within the processing chamber that are at a lower temperature than the substrate support.

[0057] For PECVD processing, there are many temperature-sensitive film properties and corresponding performance parameters of the substrate (wafer) that are continuously monitored and / or evaluated. In some applications, stringent requirements are set for the consistency of performance parameters within and between wafers. For example, the temperature of the stage can vary depending on factors such as the temperature of the processing chamber walls; the amount of heat applied to the stage by one or more heating elements within the stage; and the substrate processing performed within the processing chamber. The temperature distribution profile across the stage is based on the material properties of the stage, the heat directed and absorbed by the stage, and the heat lost to the environment (including the processing chamber walls).

[0058] Controlling the power of the heating elements within the mesa that reaches the substrate support provides limited control over the temperature distribution profile of the mesa. By controlling heat loss from the mesa to surrounding components and the environment, temperature modulation of this temperature distribution can be better controlled. Temperature modulation involves heat emitted from the mesa and the reflected heat back to the mesa, resulting in temperature fluctuations across the entire mesa.

[0059] Examples described herein include adjustable and non-adjustable heat shields positioned between the platform and the processing chamber wall. The heat shield may be "annular" and include multiple absorption-reflection-transmission (ART) regions, segments, and / or portions with different heat flux pattern variations, which may be adjustable and / or preset to provide a selected platform temperature distribution profile. The ART regions, segments, and portions alter the heat flux pattern between the platform and a distal reference surface (e.g., the surface of the plasma chamber wall).

[0060] As used herein, the terms "ART region," "ART segment," and "ART portion" refer to a corresponding amount of heat shield region, segment, or portion having heat absorption, reflection, and transmission characteristics. The ART region and ART portion of adjustable and non-adjustable heat shields can refer to segments, separated portions, non-separated portions, radially positioned portions, azimuthally positioned portions, layers, overlays, overlapping layers, etc. Adjustable aspects of the heat shield can be used to adjust the temperature of the platform, and therefore, adjust the refractive index of the platform to affect the temperature of the substrate being processed. The heat shield provides multiple parameters, which are preset and / or adjustable to control heat loss to the environment of the processing chamber, including heat loss to components within the processing chamber and / or the walls of the processing chamber. Some adjustable heat shields offer segmented modular designs for their ART segments, which can be customized for various temperature profiles and corresponding degrees of heat loss. The ART regions, segments, and portions are preset and / or adjustable to control azimuth and radial temperature non-uniformity.

[0061] The disclosed examples help to: improve azimuth and radial temperature uniformity across the entire substrate stage; improve control over the degree of thermal correction for adjusting temperature distribution profiles; provide hardware fine-tuning to compensate for hardware thermal inaccuracies; provide processing fine-tuning to compensate for processing thermal inaccuracies; reduce the amount of particulates generated during processing by covering potential contaminants and thermally shielding metal components that may generate particulates; and improve the performance of the substrate support without increasing the cost of the substrate support. The disclosed examples also help to improve the thermal response of the heating elements on the stage, and thus improve throughput. By reducing heat loss, the duty cycle of the heating elements can be reduced because less energy is needed to provide the same level of heating. Reducing heat loss also allows for the use of lower-cost hardware, which is evaluated for use at lower heating levels.

[0062] Figure 1Display substrate processing system 100 includes a processing chamber 101 having a heat shield 102. The heat shield 102 may be adjustable or non-adjustable and configured similarly to any heat shield disclosed herein. While a single heat shield is displayed, more than one heat shield may be included, such as... Figure 21 As shown in [the document]. Although Figure 1 A capacitively coupled plasma (CCP) system is shown, but the embodiments disclosed herein are applicable to other plasma processing systems. The embodiments are applicable to plasma-enhanced chemical vapor deposition (PECVD) processes.

[0063] The substrate processing system 100 includes a substrate support 104, such as an electrostatic chuck or a vacuum chuck, which is disposed within a processing chamber 101 and includes a stage 106. The substrate support 104, or other substrate supports disclosed herein, may be referred to as a base or support. The processing chamber 101 has at least one distal reference surface (e.g., distal reference surface 103) opposite a thermal shield 102. Other components, such as an upper electrode 108, may be disposed within the processing chamber 101. During operation, a substrate 109 is disposed on the stage 106 of the substrate support 104 and held to the stage 106 by electrostatic or vacuum clamping, and RF plasma is generated within the processing chamber 101.

[0064] By way of example only, the upper electrode 108 may include a nozzle 110 for guiding and distributing gas. The nozzle 110 may include a rod 111 having an end portion connected to the top surface of the processing chamber 101. The nozzle 110 is typically cylindrical and extends radially outward from opposite ends of the rod 111, wherein these opposite ends are located at positions separated from the top surface of the processing chamber 101. The substrate-facing surface of the nozzle 110 includes a plurality of orifices through which processing gas or purge gas flows. Alternatively, the upper electrode 108 may include a conductive plate to introduce gas in another manner. The platform 106 may serve as the lower electrode.

[0065] The platform 106 may include a temperature control element (TCE) that receives power from a power source 112. An RF generation system 120 generates an RF voltage and outputs it to the upper electrode 108. The RF generation system 120 may generate an RF voltage and output it to a substrate support 104. One of the upper electrode 108 and the substrate support 104 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 may include one or more RF generators 123 (e.g., capacitively coupled plasma RF power generators and / or other RF power generators) that generate an RF voltage fed to the upper electrode 108 via one or more matching networks 127. The RF generators 123 may be high-power RF generators, for example, generating 6-10 kilowatts (kW) or higher power.

[0066] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., 132-N (collectively referred to as gas sources 132), where N is a positive integer. Gas sources 132 supply one or more precursors and their gas mixtures. Gas sources 132 may also supply etching gases, carrier gases, and / or purge gases. Vaporized precursors may also be used. Gas sources 132 are connected to manifold 140 via valves 134-1, 134-2, ..., 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., 136-N (collectively referred to as mass flow controllers 136). The output of manifold 140 is supplied to processing chamber 101. By way of example only, the output of manifold 140 is supplied to nozzle 110.

[0067] The substrate processing system 100 also includes a heating system 141, which includes a temperature controller 142, which is connectable to the TCE via a power supply 112. Although the temperature controller 142 is shown to be separate from the system controller 160, it can be implemented as part of the system controller 160. The stage 106 may include multiple temperature control zones (e.g., four zones, each including four temperature sensors).

[0068] Temperature controller 142 controls the operation of the TCE and thus its temperature to control the temperature of the stage 106 and the substrate (e.g., substrate 109). Temperature controller 142 and / or system controller 160 can control the current supplied to the TCE based on parameters detected from sensors 143 within the processing chamber 205. Temperature sensor 243 may include a resistive temperature device, a thermocouple, a digital temperature sensor, and / or other suitable temperature sensor. During the deposition process, stage 106 can be heated to a predetermined temperature (e.g., 650 degrees Celsius (°C)).

[0069] Valve 156 and pump 158 are used to evacuate reactants from processing chamber 101. System controller 160 controls components of substrate processing system 100, including controlling the supplied RF power level, the pressure and flow rate of supplied gas, RF matching, etc. System controller 160 controls the state of valve 156 and pump 158. Robotic arm 170 is used to transport substrates onto and remove substrates from substrate support 104. For example, robotic arm 170 can transfer substrates between substrate support 104 and loading lock 172. Robotic arm 170 can be controlled by system controller 160. System controller 160 controls the operation of loading lock 172.

[0070] Power supply 112 can provide power (including high voltage) to the electrodes in substrate support 104 to electrostatically clamp substrate 109 onto stage 106. Power supply 112 can be controlled by system controller 160. Valves, pumps, power supplies, RF generators, etc., can be referred to as actuators. TCE can be referred to as temperature regulation element.

[0071] Figure 2 A substrate support 200 is shown, comprising a central shaft 202 and a platform 204. A heat shield 206 is adjustable and supported on the shaft 202. This heat shield 206 can be replaced with any other heat shield disclosed herein. The central shaft 202 extends upward from the processing chamber wall 208 and is hollow to allow power to be supplied to one or more heating elements (a heating element 207 is shown) on the platform 204. A substrate 210 is disposed on the platform 204. The heat shield 206 is annular and has a radially inward opening 216 and a frame 218, and may include an ART section 220 disposed on the frame 218. An example of the ART section 220 is shown. Figure 3-5 In sections 11 and 15-19. Other ART sections and surfaces are shown in Figure 6-10 and 20-21.

[0072] The heat shield 206 reduces the temperature gradient between the platen 204 and the next object in its vicinity. For example, without the heat shield 206, the temperature gradient between the platen 204 and the processing chamber wall 208 could be 575°C, at which point the temperature of the platen 204 would be 650°C, while the temperature of the processing chamber wall would be 75°C. With the heat shield 206 and in a steady state, the temperature gradient can be reduced to 10-150°C (or, for example, 10-20°C in another example), at which point the temperature of the platen 204 would be 650°C, while the temperature of the heat shield would be 500-640°C. Therefore, the first deviation between the cold area of ​​the platen 204 and the heat shield, and the second deviation between the hot area of ​​the platen 204 and the heat shield, can be minimized, and / or the deviation between the first deviation and the second deviation can be minimized and / or made insignificant.

[0073] The ART segment 220 can be modular and replaceable. The ART segment 220 is mounted on and held in place by gravity on the frame 218. This ART segment, and other ART segments disclosed herein, can have different shapes, sizes, angled surfaces, materials, heights, widths, lengths, profiles, patterns, etc. This ART segment, and other ART segments disclosed herein, can each have multiple layers. These layers can be formed of different materials and may or may not cover each other and / or partially overlap each other. Each ART segment 220 has its own absorption level, reflection level, and transmission level. These characteristics and / or parameters can be set based on the temperature distribution profile and / or reflectance index profile used for the platform and a given application.

[0074] The substrate support 200 may also include one or more heat barriers (a heat barrier 230 is shown). The heat shield 206 and the heat barrier 230 may be collectively referred to as the heat shield assembly. The heat barrier 230 may be attached to the shaft 202 and support the heat shield 206. The heat shield 206 may rest on the heat barrier 230. The weight and thickness of the heat shield 206, including the frame 218 and the ART segment 220, may be minimized and balanced such that the heat shield 206 remains balanced on the heat barrier 230, wherein (i) the distance between the heat shield 206 and the processing chamber wall 208 remains the same, and (ii) the distance between the heat shield 206 and the platform 204 remains the same. When balanced, the top surface 240 of the heat shield 206 may be parallel to the bottom surface 242 of the platform 204. Similarly, the bottom surface 244 of the heat shield 206 may be parallel to the top (or distal reference) surface 246 of the processing chamber wall 208. In one implementation, the weight and thickness of the heat shield 206 are minimized.

[0075] Although the heat shield 206 is attached to the axis at a location between the platform 204 and the distal reference surface 246, alternatively or additionally, the heat shield 206 can be positioned between the platform 204 and one or more other surfaces, which will also affect the radiative boundary state. The heat exchange between any two bodies via radiation depends on the temperatures, emissivity, absorptivity, reflectivity, and transmissivity of the two bodies, as well as the view factor between them. Any change in these parameters will cause a change in heat exchange. These parameters can be categorized and referred to as the radiative boundary state.

[0076] Increasing the infrared transmission of the heat shield 206 beneath the hot area of ​​the platform 204 increases the heat loss of the platform 204. Improving the directional emissivity of the heat shield 206 beneath the cold area of ​​the platform 204 reduces heat loss; therefore, if the heat shield 206 is configured to act as a focusing ring, infrared radiation can be reflected back to the platform 204. The ART section 220 can be configured to reflect the infrared radiation emitted by the platform 204. Arrow 250 illustrates the focused reflection of infrared radiation. Arrow 252 depicts the infrared radiation from the platform 204. Arrow 254 illustrates the infrared transmission through the heat shield 206.

[0077] Thermal barrier 230 prevents premature failure of the heat shield 206 due to a high temperature gradient between the heat shield 206 and the processing chamber wall 208. A large temperature gradient could cause cracking in the heat shield 206. Thermal barrier 230 reduces the temperature gradient between the heat shield and the next adjacent object. Reducing the temperature gradient prevents cracking in the heat shield 206, thereby improving the reliability of the heat shield 206. Thermal barrier 230, and other thermal barriers disclosed herein, may be formed of aluminum oxide (Al2O3) and / or aluminum nitride (AlN) and / or any other suitable refractory material and / or suitable metal. In some embodiments, thermal barrier 230, and other thermal barriers disclosed herein, are formed of an insulating material and serve as a thermal insulator.

[0078] ART section 220 can be configured to adjust (or set) the temperature distribution profile across the entire platform 204. An example of ART section 220 is shown in... Figure 3-5 11-12 and 16-20. Figure 3A heatsink 300 is shown, comprising a frame 302 having openings (or windows) 304 for ART sections and protrusions 305 for engagement with a central axis. While the frame 302 is shown with protrusions 305 for engagement with the central axis, the frame 302 may have protrusions for engagement with one or more other hardware components. These protrusions may extend inward or outward and may be located on the interior of the frame 302 (as shown) or on other portions of the frame 302. As shown, the ART sections are wedge-shaped and include transparent (or drain) sections 306, solid micro-transparent sections 308, and reflective (opaque) sections 310. The ART sections may have different widths to partially or completely cover one or more of the openings 304. One or more of the openings 304 may not include the ART sections.

[0079] Frame 302 may have any number of openings for ART segments. During substrate processing, one or more of these openings 304 may not include any ART segments, or may be partially or completely filled by ART segments. In the example shown, frame 302 has three openings configured to receive ART segments, one of which is completely filled by segment 306, the second opening is completely filled by segment 310, and the third opening is partially filled by segment 308.

[0080] In a given area of ​​heat shield 300, when no ART screen is provided on the frame between the platform and the processing chamber wall, the maximum heat transfer from the platform to the processing chamber wall is provided. A further reduced heat transfer is provided when one of the sections 306 is provided between the platform and the processing chamber wall. Maximum heat absorption is provided when one of the sections 308 is provided between the platform and the processing chamber wall. Maximum heat reflection is provided when one of the sections 310 is provided between the platform and the processing chamber wall. Arrow 326 is shown to illustrate the thermal effect of the no-ART section, the transparent section 306, the solid micro-transparent section 308, and the reflective (opaque) section 310 on the platform. For example, the transparent section 306 may be formed of sapphire and / or other suitable thermally transparent materials. The solid micro-transparent section 308 may be formed of ceramic, zirconium, and / or other suitable micro-transparent and heat-absorbing materials. The reflective (opaque) section 310 may be formed of aluminum oxide (Al2O3), aluminum nitride (AlN) and / or other suitable reflective materials.

[0081] Each of the ART segments 306, 308, and 310 may include a removal hole (one hole labeled 320) for gripping and removing the ART segment 306, 308, or 310 with a finger. The frame 302 may have a lift pin hole 322 through which a lift pin can pass and for lifting the substrate from the stage. The frame 302 may also include a peripheral frame 330 in each opening 304, on which segments 306, 308, and 310 are placed. Although segments 306, 308, and 310 are shown in a particular one of these openings 304, segments 306, 308, and 310 may be moved to other openings 304. Each opening 304 may include different types of ART segments, including segments 306, 308, and 310 of different types.

[0082] The reflective section 310 includes ridges 350 separated by channels 352, wherein these channels 352 have recessed surfaces. The sides of the ridges 350 may be perpendicular to the channels 352 or may be angled to have a predetermined pitch, thereby guiding reflected heat and / or focusing heat to a specific area of ​​the platform at a predetermined angle.

[0083] Figure 4 Another heatsink 400 is shown, comprising a frame 402 having multiple openings 404 with multiple rack-like portions (one of which is labeled 406), on which ridged reflective sections 408 are disposed. As shown, the ridged reflective sections 408 may be wedge-shaped. The available positions of the ridged reflective sections 408 are identified by numbers 1-9. Although nine positions are shown, the dimensions of the ridged reflective sections 408 and the dimensions of these openings may vary to accommodate any number of ridged reflective sections.

[0084] Figure 5A processing chamber 500 including a heat shield 502 is shown. The heat shield 502 includes a frame 503 having a solid (or perforated) portion 504 without ART segments and another (or perforated) portion 506 with heat-absorbing wedge-shaped segments 508. The heat shield 502 includes two openings 510, 512 within portion 506. Opening 510 includes a single ART segment. Opening 512 includes four ART segments. Because the ART segments 508 are partially transparent, a ring 514 is visible from the top side of the heat shield 502. In one embodiment, the ART segments 508 are formed of sapphire. In another embodiment, the ART segments 508 include multiple layers, wherein a silicon (Si) layer is disposed between two sapphire layers. These layers are parallel to each other and extend radially and azimuthally. The sapphire material may cover the edges of the silicon layers to provide edge protection. The sapphire layers protect the silicon layers from exposure to the environment within the processing chamber 500 and thus prevent degradation of the silicon layers. By comprising multiple layers, one or more of which are formed of silicon, the ART segment is more transparent to infrared radiation. An example of a multilayer ART segment is shown in... Figure 25 middle.

[0085] The heat shield 502 includes three protrusions 520 that project radially inward and slide along a groove 522 in a chuck 524. The chuck 524 is located on a shaft 526. During installation, the protrusions 520 of the heat shield 502 are aligned with the groove 522. The heat shield 502 is then slid onto the chuck 524. The protrusions 520 prevent the heat shield 502 from rotating.

[0086] Figure 6 A processing chamber 600 including a heat shield 602 is shown. The heat shield 602 includes a solid (or perforated) portion 604 without ART sections and another (or perforated) portion 606 with circular ART sections. Pairs of different types of ART sections are shown, some of which are labeled 608, 610. These ART sections may resemble the wedge-shaped sections disclosed herein and are formed of different ART materials, wherein the ART material is selected based on the absorption, reflection, and transmission properties chosen for a given application. Although these ART sections are shown as circular, of equal size, and arranged in radially extending rows, the ART sections may have different shapes and sizes and be arranged in different configurations (or patterns). These ART sections are arranged in their respective openings (or windows) 612 and can be positioned on a frame in a manner similar to that of the wedge-shaped sections.

[0087] The heat shield 602 includes three protrusions 620, which protrude radially inward and slide along a groove 622 of a chuck 624. The chuck 624 is located on a shaft 626. During installation, the protrusions 620 of the heat shield 602 are aligned with the grooves 622. The heat shield 602 is then slid onto the chuck 624. The protrusions 620 prevent the heat shield 602 from rotating.

[0088] Figure 7 A processing chamber 700 is shown, including a heat shield 702 having a reflector portion 704 and another portion 706 including a circular ART segment. The reflector portion 704 may be configured similarly to the reflective ART segments disclosed herein and may include a channel 703 and a ridge 705. The channel 703 and / or the reflector portion 704 may be formed of a reflective material, such as aluminum oxide or other reflective materials. The channel 703 may face the bottom side of the substrate stage.

[0089] This shows pairs of ART segments of different types, some of which are labeled 708, 710, etc. These ART segments can be similar to... Figure 6 The ART sections. These ART sections are set in their respective openings (or windows) 712 and can be located on the frame in a manner similar to the wedge-shaped sections disclosed herein.

[0090] The heat shield 702 includes three protrusions 720 that project radially inward and slide along a groove 722 in a chuck 724. The chuck 724 is located on a shaft 726. During installation, the protrusions 720 of the heat shield 702 are aligned with the grooves 722. The heat shield 702 is then slid onto the chuck 724. The protrusions 720 prevent the heat shield 702 from rotating.

[0091] In one embodiment, the heat shield 702 includes a transfer channel and ridge facing downward toward the processing chamber wall, instead of a reflective channel and ridge facing upward toward the substrate stage. In another embodiment, the heat shield 702 includes both a reflective channel and ridge and a transfer channel and ridge. An example of a transfer channel and ridge is shown in... Figure 9 In the middle, these transmission channels and the spine are displayed inverted.

[0092] Figure 8-10A heatsink 800 is shown, comprising a body (or frame) 801 having a reflector portion (or first half) 802 and an emitter portion (or second half) 804. The reflector portion 802 includes: a channel 806 and a ridge 808 having a reflective surface on a first side; and a solid flat surface 809 on the opposite side. The emitter portion 804 includes: a channel 810 and a ridge 812 having a reflective recessed surface on a first side; and a solid flat surface 814 on the opposite side. An overlap region 816 may exist between the reflector portion 802 and the emitter portion 804. The channels 806 and 810 have sidewalls forming the ridges 808 and 812. An exemplary sidewall 820 is shown. Figure 10 The heat shield 800 includes three protrusions 822 that project radially inward and slide along a groove of a chuck (e.g., one of the chucks disclosed herein). The heat shield 800 also includes an innermost radial edge 830 and an outermost radial edge 832.

[0093] Figure 11 Another heat shield 1100, including a frame 1102, is shown. The frame 1102 has openings 1104 for wedge-shaped ART segments 1106. These ART segments 1106 are of equal size. The heat shield 1100 is positioned on heat barriers 1110 and 1112. The heat shield 1100 is positioned on and in contact with heat barrier 1110. Heat barrier 1110 is positioned on and in contact with heat barrier 1112. During installation, heat barrier 1112 can be attached to a central axis (not shown), then heat barrier 1110 can be slid onto the central axis and rotated to lock with heat barrier 1112. Then, heat shield 1100 can be slid onto heat barrier 1110 and rotated to lock with heat barrier 1110. An example of a heat barrier is shown below. Figure 14-15 The description will be further shown and illustrated. The heat barrier functions in a manner similar to other heat barriers disclosed herein.

[0094] The heat barrier 1112 may be hexagonal and include six contact points for the heat barrier 1110 (shown in...). Figure 15 The heat barrier 1110 may be dodecagonal and include twelve outer sides 1114, or may be any other suitable shape. Six sides of the heat barrier 1110 may contact the six radially inner sides 1116 of the heat barrier 1112.

[0095] Figure 12Another heat shield 1200 is shown, including a frame 1102 with openings 1104 for wedge-shaped ART segments 1206. The ART segments 1206 have different sizes. The ART segments 1206 may have different angular widths to provide different numbers of segments in each opening 1104. This allows for adjustment of the level of adjustment and / or the granularity of temperature control. In the example shown, two ART segments of different sizes are shown. The larger ART segments may have holes 1208 or pockets for easy gripping, removal, and placement of these ART segments. The heat shield 1200 is shown positioned on a heat barrier 1110.

[0096] Figure 13 Showing Figure 11-12 The heat shields 1100 and 1200 include a frame 1102 and heat barriers 1110 and 1112. The frame 1102 includes an opening 1104 having a frame-like portion 1300 for the ART section. The frame-like portion 1300 extends around the outer edge of the window portion 1104.

[0097] Still referencing Figure 14-15 . Figure 14 Showing Figure 11-12 The heat shield 1100, 1200 and the heat barrier 1110. The heat barrier 1110 provides the connection between the barrier and the heat shield. Figure 15 show Figure 11-12 The heat shields 1100 and 1200 have heat barriers 1112. Heat barriers 1110 provide a connection between the shaft and the barrier. Heat barriers 1110 include six radially outwardly projecting protrusions 1400, on which heat barriers 1112 are disposed. Protrusions 1400 are adjacent to sides 1114. Heat barriers 1110 include six attachment points 1402 for attaching the heat barrier 1110 to the shaft or a fastening member of the shaft.

[0098] The heat barrier 1112 includes six contact points (or outwardly protruding pads) 1500, on which one of the heat shields 1100 and 1200 is disposed. The heat barrier 1112 includes a base 1502 and a hexagonal ring 1504 extending upward from the base 1502. The base 1502 and the ring 1504 may form a single component. The ring 1504 slides into the central opening of the heat shield and prevents the heat shield from rotating. The sides of the ring 1504 contact the radially innermost edge of the heat shield.

[0099] The hexagonal configuration of the heat barriers 1110, 1112 and the corresponding heat shield frames provides a robust design for better thermal isolation. Furthermore, by having the ART segments of the corresponding heat shields located in dispersed, specific positions, performance reproducibility is improved.

[0100] Figure 16-20 Different wedge-shaped ART segments are shown; these wedge-shaped ART segments can be used or sized for use in [specific applications]. Figure 2-5 And in frames 218, 302, 402, 503, and 1102 of 11-13. The wedge-shaped ART segments have different geometries, which affect azimuth and radial temperature nonuniformity in different ways. The geometry of the wedge-shaped ART segments, as well as the corresponding hole and notch patterns, can be modified and adjusted to minimize and / or change the effects of the wedge-shaped ART segments on azimuth and radial nonuniformity. Furthermore, although the wedge-shaped ART segments are displayed with specific shapes and properties (e.g., holes, notches, pockets, peaks, ridges, depressions, etc.), these shapes and properties and / or the number of properties can be changed. Figure 16 A plate-shaped wedge-shaped section 1600 is shown, and the wedge-shaped section 1600 has a window 1602 that is also wedge-shaped.

[0101] The ART segments disclosed herein can be keyed to facilitate holding these ART segments in a configured position on the frame of the hotspot. For example, segment 1600 includes a keying side 1604 with a notch 1605. Although one side of segment 1600 is shown as keyed, more than one side can be keyed. The frame of the hotspot may have radially inwardly extending keying protrusions coupled to the keying side of the ART segment. An exemplary frame 2200 is shown in Figure 22 The frame 2200 includes multiple keying protrusions 2202 (one for each ART segment). Although the keying protrusions are shown as the outermost radial portion of the window portion 2204 along the frame 2200, the keying protrusions may be located on other sides of the window portion 2204.

[0102] Figure 17 A wedge-shaped segment 1700 with an upper surface 1702 is shown, wherein the upper surface 1702 has a different height and has an angled side portion 1704 and a centrally located peak portion 1706. As an example, the position of the peak portion 1706 can be moved radially inward or outward to adjust for deviations in the wedge-shaped segment 1700 due to radial temperature non-uniformity. As another example, the height of the peak portion 1706 relative to the bottom of the wedge-shaped segment 1700 can also be adjusted. Figure 21 The image shows an example of a heatsink comprising several wedge-shaped segments of 1700. Figure 18 A wedge-shaped section 1800 with a double radially inwardly notched end 1802 is shown. The end 1802 includes two notches 1804. Figure 19 A wedge-shaped segment 1900 with a body 1902 is shown, wherein the body 1902 may be hollow to reduce weight. In the example shown, the height of the body 1902 is consistent across the body 1902 laterally. Figure 20 The image shows examples of ART segments with different heights. Implementable. Figure 16-18 Examples and Figure 20 At least some examples show that, in addition to affecting azimuth temperature nonuniformity, radial temperature nonuniformity is also affected.

[0103] Figure 20 Display: Solid wedge section 2000; Thick wedge section 2002 having a top surface 2003, which can be positioned near the platform during implementation; Wedge section 2004 having an angled top surface 2005 to guide heat at certain angles relative to the platform; Wedge section 2006 having an angled top surface 2007 and an extension 2009 that extends beyond and is suspended at the radially outermost edge of the corresponding heatsink; Wedge section 2008 having a top surface 2011 that extends from the radially innermost edge 201 Section 2002 to its outermost radial edge 2015 is radially convex; wedge-shaped section 2010 has a top surface 2017 that is radially concave from its innermost radial edge 2019 to its outermost radial edge 2021; wedge-shaped section 2012 has a concave top surface 2023 in the azimuth direction to radially minimize interaction with adjacent sections of the same thickness; wedge-shaped section 2014 has a concave, angled top surface 2025 in the azimuth direction, such that the thickness of the section is greatest at its innermost radial edge. Sections 2002, 2004, 2006, 2008, 2010, 2012, and 2014 may be hollow to reduce weight.

[0104] The ART segment disclosed herein can be perforated to include one or more holes. These holes can have different sizes and shapes. Figure 16-17 The image shows an example of an ART segment with a single hole.

[0105] Figure 21 A heatsink 2100 is displayed, including a frame 2102 having windows 2104. Multiple ART segments 2106 are provided in each window 2104. These ART segments are similar to... Figure 17 The ART segments 1700 have different sizes. Some ART segments 2106 include an opening 2108, while others do not.

[0106] Figure 23The image shows a processing chamber 2300, a segmented heat shield 2301 with offset, a cantilevered ART section 2302, and a retaining clamp 2304 (not a frame). The ART section 2302 is wedge-shaped and has a radially innermost end 2305 for insertion into a groove 2306 of the retaining clamp 2304. The retaining clamp 2304 includes a body 2307 having cylindrical sidewalls 2309 with grooves 2306. The radially innermost end 2305 is inserted into the groove 2306, while the ART section 2302 is tilted downward toward the retaining clamp 2304 such that the radially outermost end 2308 of the ART section 2302 is higher than the radially innermost end 2305. Once inserted into groove 2306, the outermost radial end 2308 of the ART segment is pivoted downwards, causing the top surface of the ART segment 2302 to extend horizontally. In one embodiment, the outermost radial end 2308 is pivoted downwards, causing the ART segment 2302 to tilt downwards, wherein the outermost radial end 2308 is 0-0.2° lower than the innermost radial end 2305. The retaining clamp 2304 has a lower portion 2320 with attachment points 2322 for attaching the retaining clamp 2304 to the central shaft.

[0107] The heat shield 2301 is modularly designed to allow for easy and quick replacement of the ART segments 2302, as well as insertion and removal of the heat shield 2301, without disassembling the substrate support. When a passageway to the interior of chamber 2300 is provided, each ART segment 2302 can be easily pulled out or inserted into one of the grooves 2306. The ART segments 2302 can be positioned 360° around the clamp 2304 and can be vertically offset from each other, as shown. This facilitates easy insertion and removal of the ART segments 2302. Furthermore, the offset provides another setting to adjust the amount of absorption, reflection, and transmission based on the distance between the substrate stage and the top surface of the ART segment 2302. Although shown horizontally in azimuth, each ART segment can be angled in azimuth such that one radially extending edge of the ART segment is lower than the other opposing radially extending edges.

[0108] In one embodiment, the ART segment 2302 is formed of ceramic, while the clamp 2304 is formed of aluminum. In another embodiment, both the ART segment 2302 and the clamp 2304 are formed of aluminum. The ART segment 2302 may be formed of a non-aluminum or metal-based material other than aluminum.

[0109] Figure 24A substrate support 2400 is shown, comprising a platform 2402 and stacked heat shields 2404 and 2406 arranged in a nested configuration. The substrate support 2400 includes a central axis 2408 on which the platform 2402 is disposed. The platform 2402 supports a substrate 2409. Each heat shield 2404 and 2406 has a respective heat barrier 2410 and 2412, which are attached to the central axis 2408 and support the heat shield 2404 and 2406. The heat shields 2404 and 2406 and the heat barriers 2410 and 2412 can be collectively referred to as a heat shield assembly. Although two heat shields and two heat barriers are shown, any number of each may be included. Each additional heat shield provides another thermal separation layer between the platform 2402 and the processing chamber wall 2420, wherein the processing chamber wall 2420 has a distal reference surface 2421. Each heat shield 2404, 2406 may be configured similarly to any heat shield disclosed herein. Furthermore, a gap may exist between the heat shield 2406 and the heat barrier 2410 (as shown), or the heat barrier 2410 may be disposed on the heat shield 2406. Heat shields 2404, 2406 may include ART segments 2422, 2424, 2426, 2428, such as any ART segment disclosed herein.

[0110] As an example, the tabletop can be at 650°C, the temperature of the heat shield 2404 can be between 400-500°C, the temperature of the heat shield 2406 can be between 250-350°C, and the temperature of the processing chamber wall 2420 can be at 70°C. This nested configuration can also be used in applications where the tabletop 2402 temperature exceeds 650°C.

[0111] Figure 25 A multi-layer ART segment 2500 is shown, comprising a first layer 2502, a second layer 2504, and a third layer 2506. The ART segment 2500 may include a channel hole 2508 and a keying side 2510 with a notch 2512. Layers 2502 and 2506 may be formed of one or more materials and may protect the second layer 2504, which may be formed of one or more different materials. One of layers 2502 and 2506 may cover the periphery of the second layer, as shown at edges 2514 and 2516. As an example, layers 2502 and 2506 may include sapphire, while the intermediate layer 2504 may include ceramic, refractory material, or at least one of one or more metals.

[0112] While several types of adjustable heatsinks have been described above, non-adjustable heatsinks can also be modified to have the matching ART characteristics of any adjustable heatsink in a specific configuration. For example, one could... Figure 3-11The adjustable heatsinks 1, 13, and 21-23 are formed as an integral structure with corresponding ART areas and / or portions. As an example, the adjustable heatsinks 1, 13, and 21-23 can be selected. Figure 3-11 13 and 21-23 are any of the specific configurations of adjustable heatsinks, and then a single monolithic structure is processed to have the same size, shape and dimensions as the selected adjustable heatsink. Figure 26 Another example of an integral heatsink is shown in the image.

[0113] Figure 26 A circular, non-adjustable heat shield 2600 is shown. The heat shield 2600 has a fixed structure including a plate 2601 with a centrally located hexagonal opening 2602, circular holes 2604, and four arc-shaped side holes 2608. Curved ridges 2606 extend away from the plate 2601. The openings are configured to couple to thermal barriers (e.g., Figure 13 (Heat barrier 1110). Holes 2604 and ridges 2606 are located radially outside and surround the opening 2602. Holes 2608 are provided radially outside and surround the opening 2602, the holes 2604, and the curved ridges 2606. In the example shown, although there are three holes 2604, three ridges 2606, and ten holes 2608, each may include any number. Ridges 2606 include (i) peaks 2610 extending between longitudinal ends 2612, and (ii) radially inclined and arched opposing sides 2614. These holes 2608 are equidistant from each other.

[0114] Figure 27 A reproducible method 2700 for manufacturing an adjustable or non-adjustable thermal shield (e.g., any thermal shield disclosed herein) is shown. Method 2700 includes an initial design of the thermal shield at 2702 to adjust the heat flow pattern variation characteristics by setting and / or improving one or more critical dimensions of the substrate to meet a first predetermined criterion for that one or more critical dimensions. This includes: determining and / or selecting: the size, shape, dimensions, and / or composition of the frame and / or body; the number, size, shape, dimensions, and / or composition of the ART regions, segments, and / or portions of the frame and / or body; the number of ART regions, segments, and / or portions to be included; the size, shape, dimensions, location, and / or composition of each ART region, segment, and / or portion; the number, location, size, shape, and dimensions of the holes and / or other features of the thermal shield, etc. This also includes fabricating the thermal shield to be tested. Operation 2702 may have significant recurring costs and long lead times. At 2703, the thermal shield is fabricated according to the latest set parameters.

[0115] At 2704, the substrate is fed to the station to perform a deposition or etching operation. At 2706, when a thermal screen is used, a deposition or etching operation is performed, for example, on a film layer of the substrate, to change one or more critical dimensions of the substrate.

[0116] At 2708, the substrate is transferred from the deposition / etching station to the measurement station. At 2710, metrology is performed to measure one or more critical dimensions, and the measured data is analyzed to determine, based on the first predetermined criterion, whether modifications to one or more heat flow pattern variation characteristics and / or the ART aspect of the heatsink are necessary. If the heatsink design requires modification, operation 2702 is performed to redesign and fabricate another heatsink. Heatsink parameters can be modified based on this analysis and used at operation 2702.

[0117] Although method 2700 is described in terms of forming an adjustable heat shield, a similar method can be used to form a non-adjustable heat shield.

[0118] Figure 28 Method 2800 for adjusting the repetitive execution of an adjustable thermal screen is shown. Figure 28 The method can be completed Figure 27 The method is performed afterward. Method 2800 includes fine-tuning the thermal screen at 2802 to set and / or improve one or more critical dimensions of the substrate to meet a second predetermined criterion. The second predetermined criterion may have more precise requirements than the first predetermined criterion. This may, for example, include determining the number of ART segments to be included, the type of ART segments, and the location of the ART segments on the frame or body of the thermal screen. This may include determining locations on the frame and / or body where ART segments are not included. Operation 2802 may not have any recurring costs and has a short lead time, for example, much shorter than Figure 27 The lead time for operation 2702.

[0119] At 2804, the substrate is fed to the station to perform a deposition or etching operation. At 2806, when a thermal screen is used, for example, a deposition or etching operation is performed on a film layer of the substrate to change one or more critical dimensions of the substrate.

[0120] At 2808, the substrate is transferred from the deposition / etching station to the measurement station. At 2810, metrology is performed to measure one or more critical dimensions, and the measured data is analyzed to determine if one or more ART aspects of the thermal screen need modification. If the thermal screen design requires modification, operation 2802 is performed to further fine-tune the thermal screen. Thermal screen parameters can be modified based on this analysis and used at operation 2802.

[0121] Figure 29A method 2900 for repetitively executing the manufacture of a non-adjustable thermal screen is shown. This method can be executed alone or in conjunction with... Figure 28 The method is executed after that. For example, Figure 28 The method can be executed to fine-tune the adjustable heatsink, saving time and cost, and then the following can be executed. Figure 29 The method is based on and / or matched by the execution Figure 28 The method provides the final adjustable heatsink for processing integral heatsinks.

[0122] Method 2900 includes fabricating an integral (non-adjustable) heat shield at 2902. This may be based on previous test results. Operation 2902 can be performed... Figure 27 and 28 The operation is performed after one or more of the methods described above. Operation 2902 may not have any recurring costs, and its lead time may be, for example, shorter than [a certain amount]. Figure 27 The lead time for operation 2702 is longer than... Figure 28 The lead time for operation 2802.

[0123] At 2904, the substrate is fed to the station to perform a deposition or etching operation. At 2906, when a thermal screen is used, a deposition or etching operation is performed, for example, on a film layer of the substrate, to change one or more critical dimensions of the substrate.

[0124] At 2908, the substrate is transferred from the deposition / etching station to the measurement station. At 2910, metrology is performed to measure one or more critical dimensions. At 2912, the measured data is analyzed to determine whether one or more ART aspects of the thermal screen need modification, and thus the thermal screen needs to be redesigned and / or modified. This may be based on a third predetermined criterion. This third predetermined criterion may have more specific requirements than the first predetermined criterion. This third predetermined criterion may match or have requirements similar to the second predetermined criterion. If the thermal screen design requires modification, operation 2902 is performed. The thermal screen parameters can be modified based on this analysis and used at operation 2902.

[0125] The disclosed heat shield has predetermined and set parameters to adjust the heat loss of the high-temperature platform. The disclosed heat shield can be used as a tool to improve the design of the processing chamber and / or as a feature in a tool to improve tool performance.

[0126] The ART segments, regions, and parts disclosed in this article may not be separate portions of the hot screen. Multiple adjustment techniques can be superimposed to achieve continuous (spatial) tailoring of performance.

[0127] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0128] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second elements is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate element exists between the first and second elements, but it can also be an indirect relationship, where one or more intermediate elements exist between the first and second elements (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0129] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools and other transfer tools and / or loading locks connected to or interfaced with a specific system.

[0130] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing specific processes on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silica, surfaces, circuits, and / or wafer dies.

[0131] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide processing recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the processing and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a room that communicate with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control processing on the room.

[0132] Example systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing systems that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0133] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. A heat shield for a substrate support plate, the heat shield comprising: frame; Multiple absorption-reflection-transmission sections are in contact with the frame and configured to influence at least a portion of the heat flow pattern between the distal reference surface and the platform, wherein the multiple absorption-reflection-transmission sections include adjustable aspects to adjust the at least a portion of the heat flow pattern. as well as in: The framework includes: A central opening, configured to receive the axis of the substrate support, and Multiple windows, configured to be at least partially covered by the multiple absorption-reflection-transmission segments at designated locations; and The plurality of absorption-reflection-transmission sections are configured to be disposed in or above at least one of the plurality of windows and are held by the frame.

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