Failure analysis method and system and defect marking structure

Abstract

The invention discloses a failure analysis method and system and a defect marking structure, and belongs to the technical field of semiconductors. Cross-scale and cross-equipment seamless precise positioning is realized, and the transition problem from macroscopic positioning to microscopic analysis is perfectly solved through a multi-stage marking system combining'micron-scale defect marking 'and'macroscopic pointing marking' with the assistance of'digital distance marking '; wherein the pointing mark ensures that a general area is quickly found, and the distance mark provides accurate navigation, so that the time for searching defects under high-magnification equipment is greatly shortened, the analysis efficiency is improved by more than multiple times, and the defect loss is effectively avoided.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, such as quality control and failure analysis technology in semiconductor manufacturing, microelectronics and materials science, and particularly to a failure analysis method, system and defect marking structure. Background Technology

[0002] In high-end manufacturing industries such as semiconductors, display panels, and precision optics, product yield is a core indicator, and minute defects in the production process are key factors affecting yield. Therefore, rapid and accurate failure analysis of defects is a crucial step in the manufacturing process. Existing failure analysis processes typically face the following technical challenges: (1) Difficulty in localization and relocation: The coordinate systems of defects scanned by defect detection equipment are not consistent with those of other high-magnification failure analysis equipment. When transferring samples between different devices, due to the huge differences in coordinate deviation and field of view, it is extremely time-consuming and labor-intensive to find micron or even nanometer-scale defects on the analysis equipment, and key defects may even be lost due to the inability to locate them. (2) Visibility and durability of markings: Traditional defect marking methods may not be obvious enough or difficult to identify under observation equipment of different scales. After finding a defect, analysts lack a multi-level marking scheme that can quickly guide the location under macroscopic vision and accurately locate it in microscopic analysis. Therefore, how to solve the problem of accurate defect localization and relocation across scales and devices is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0003] The purpose of this application is to provide a failure analysis method, system, and defect marking structure to solve the problem of accurate defect location and relocation across scales and devices.

[0004] To achieve the above objectives, this application provides a failure analysis method, comprising:

[0005] Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample to be tested and determine the coordinates of the defects; the surface of the sample to be tested includes at least one of the defects;

[0006] Step 2: After scanning is completed, multiple micron-sized defect marks are formed on the surface of the sample to be tested around the defect along the circumferential direction according to the coordinates of the defect;

[0007] Step 3: Under the microscope, locate the defect and the defect mark according to the coordinates of the defect, and form a pointing mark on the surface of the sample to be tested on the side of the defect mark away from the defect; the pointing mark points to the defect;

[0008] Step 4: After forming the pointing mark, add a distance mark to the interface of the microscope; the distance mark is located between the pointing mark and the defect mark; the distance mark includes the distance value between the pointing mark and the adjacent defect mark;

[0009] Step 5: In the failure analysis equipment, locate the position of the defect mark according to the pointing mark and the distance mark, and locate the defect according to the defect mark;

[0010] Step 6: After locating the defect, perform failure analysis on the defect using the failure analysis equipment to obtain the analysis results.

[0011] Optionally, after step 6, the method further includes:

[0012] Step 7: Enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

[0013] Optionally, after step 7, the method further includes:

[0014] Step 8: When key information is detected in the entered analysis data, feedback information is generated and pushed to the MES system, so that the MES system feeds back the feedback information to the corresponding process segment and provides the cause of the defect; the MES system is integrated and connected with the database.

[0015] Optionally, step 7 includes:

[0016] Step 71: Create the database; the database fields include the special mark number and the analysis data; the special mark is a numbered mark pre-formed on the surface of the sample to be tested on the side of the defect mark facing away from the defect;

[0017] Step 72: Using the special marker number as the primary key, enter the analysis data into the corresponding field of the database to establish a one-to-one correspondence between the special marker number and the analysis data.

[0018] Optionally, before step 3, the following steps are also included:

[0019] Step 30: Set the coordinate offset in the microscope according to the coordinates of different models of the defect detection equipment; the coordinate offset is the coordinate offset between the defect detection equipment and the microscope.

[0020] Optionally, step 3 includes:

[0021] Use a marker to draw the pointing mark on the surface of the sample under test on the side of the defect mark that is opposite to the defect mark.

[0022] Optionally, step 2 includes:

[0023] The control system in the marking generation device reads the coordinates of the defect and drives the defect marking generation device in the marking generation device to form multiple micron-sized defect marks on the surface of the sample to be tested around the defect in the circumferential direction according to the coordinates of the defect; the defect marking generation device includes a diamond probe or a laser head.

[0024] Optionally, step 5 includes:

[0025] The sample to be tested is transferred to the failure analysis device;

[0026] Locate the pointing marker with the naked eye;

[0027] The defect marker array is located at low magnification, and the target marker and distance marker are used to navigate to the defect marker.

[0028] The defect is located based on the defect marker.

[0029] To achieve the above objectives, this application also provides a failure analysis system, including: a defect marking module and a failure analysis module;

[0030] The defect marking module is used to perform:

[0031] Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample to be tested and determine the coordinates of the defects; the surface of the sample to be tested includes at least one of the defects;

[0032] Step 2: After scanning is completed, multiple micron-sized defect marks are formed on the surface of the sample to be tested around the defect along the circumferential direction according to the coordinates of the defect;

[0033] The failure analysis module is used to perform:

[0034] Step 3: Under the microscope, locate the defect and the defect mark according to the coordinates of the defect, and form a pointing mark on the surface of the sample to be tested on the side of the defect mark away from the defect; the pointing mark points to the defect;

[0035] Step 4: After forming the pointing mark, add a distance mark to the interface of the microscope; the distance mark includes the distance value between the pointing mark and the adjacent defect mark;

[0036] Step 5: In the failure analysis equipment, locate the position of the defect mark according to the pointing mark and the distance mark, and locate the defect according to the defect mark;

[0037] Step 6: After locating the defect, perform failure analysis on the defect using the failure analysis equipment to obtain the analysis results.

[0038] Optionally, the failure analysis system further includes: a data input module;

[0039] The data entry module is used to perform step 7: enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

[0040] Optionally, the failure analysis system further includes: a feedback system module;

[0041] The feedback system module is used to execute step 8: when it detects that the input analysis data includes key information, it generates feedback information and pushes the feedback information to the MES system, so that the MES system feeds back the feedback information to the corresponding process segment and provides the cause of the defect; the MES system is integrated and connected with the database.

[0042] To achieve the above objectives, this application also provides a defect marking structure for use in the failure analysis method described above. The defect marking structure includes: multiple micron-sized defect markings disposed on the sample surface, as well as pointing markings and distance markings; the sample surface includes at least one defect.

[0043] The defect markings are arranged circumferentially around the defect;

[0044] The pointing mark is located on the side of the defect mark that is away from the defect; the pointing mark points towards the defect.

[0045] The distance marker is located between the pointing marker and the defect marker; the distance marker includes the distance value between the pointing marker and the adjacent defect marker.

[0046] Optionally, the defect marking structure further includes: special markings disposed on the sample surface;

[0047] The special mark is located on the side of the defect mark opposite to the defect; the special mark is a mark that includes a number.

[0048] Clearly, the failure analysis method provided in this application achieves seamless and precise positioning across scales and devices: through a multi-level marking system combining "micrometer-level defect markers" and "macroscopic directional markers," supplemented by "digital distance markers," it perfectly solves the transition problem from macroscopic positioning to microscopic analysis. Specifically, the directional markers ensure rapid location of the general area, while the distance markers provide precise navigation, significantly shortening the time spent searching for defects under high-magnification equipment, improving analysis efficiency by several times, and effectively preventing defect loss. This application also provides a failure analysis system and defect marking structure, possessing the aforementioned beneficial effects. Attached Figure Description

[0049] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0050] Figure 1 A flowchart of the first failure analysis method provided in the embodiments of this application;

[0051] Figure 2 A flowchart of the second failure analysis method provided in the embodiments of this application;

[0052] Figure 3 A flowchart of the third failure analysis method provided in the embodiments of this application;

[0053] Figure 4 A flowchart of the fourth failure analysis method provided in the embodiments of this application;

[0054] Figure 5 A structural block diagram of a failure analysis system provided in this application embodiment;

[0055] Figure 6 A schematic diagram of a defect marking structure provided in an embodiment of this application;

[0056] Figure 7 A flowchart illustrating a failure analysis method provided in an embodiment of this application;

[0057] Figure 8 This is a schematic diagram of a process for forming a defect marker structure, provided in an embodiment of this application.

[0058] The annotations in the attached figures are explained as follows:

[0059] 1-Defect; 21-Defect marker; 22-Pointing marker; 23-Distance marker; 24-Special marker. Detailed Implementation

[0060] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0061] In high-end manufacturing industries such as semiconductors, display panels, and precision optics, product yield is a core indicator, and minute defects in the production process (such as particle contamination, scratches, and crystal defects) are key factors affecting yield. Therefore, conducting rapid and accurate failure analysis of defects and tracing their root causes to improve processes is a crucial step in the manufacturing process.

[0062] Existing failure analysis processes typically face the following technical challenges:

[0063] (1) Difficulty in localization and relocation: The coordinates of defects scanned by defect detection equipment are not consistent with the coordinate systems of other high-magnification failure analysis equipment (such as SEM (Scanning Electron Microscope), FIB (Focused Ion Beam), AFM (Atomic Force Microscope), etc.). When transferring samples between different equipment, due to the huge differences in coordinate deviation and field of view (from millimeter to nanometer), it is extremely time-consuming and labor-intensive to find micron or even nanometer-sized defects on the analysis equipment. In some cases, key defects may be lost due to the inability to locate them.

[0064] (2) Visibility and persistence of marking: Traditional defect marking methods may not be obvious enough or difficult to identify under observation equipment at different scales (macro to micro). After finding the defect, the analyst lacks a multi-level marking scheme that can quickly guide the location in the macro view and accurately locate it in the micro analysis.

[0065] (3) Poor equipment compatibility: There are various brands and models of defect detection and analysis equipment on the market, with different coordinate systems and software interfaces. There is a lack of a universal coordinate transformation and matching method, which makes it difficult for the same analysis platform to flexibly adapt to samples from different sources, reducing analysis efficiency and the universality of the platform.

[0066] (4) Broken information traceability chain: The data generated during the analysis process (such as defect morphology, elements, physical properties, etc.) are usually stored in the form of reports in a scattered manner. They lack a systematic connection with the specific background information of the defect on the production line (such as which photomask or process segment it comes from). This makes it difficult to efficiently feed the analysis results back to the manufacturing execution system and to form a closed-loop management of "discovery-analysis-improvement".

[0067] Therefore, there is an urgent need in this field for a systematic solution that can overcome the above-mentioned shortcomings and achieve a complete process from defect discovery, precise location, cross-platform analysis to intelligent data feedback.

[0068] To address the challenge of precise defect location and relocation across scales and devices, this application provides a first failure analysis method. By introducing a multi-level marking system (including micron-level precision markings and macroscopic directional markings), it achieves rapid, non-destructive, and precise defect location across different observation and analysis devices, significantly improving search efficiency. Preferably, based on the introduction of a multi-level marking system, a unified coordinate transformation mechanism is further established.

[0069] Please refer to Figure 1 , Figure 1 This is a flowchart of a first failure analysis method provided in an embodiment of this application. The failure analysis method may include:

[0070] Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample and determine the coordinates of the defects; the surface of the sample to be tested includes at least one defect.

[0071] It should be noted that the process of scanning the sample to be tested using the defect detection equipment in this implementation may include:

[0072] The sample to be tested is placed in a defect detection device for full-surface scanning.

[0073] By performing a full-surface scan, the defect detection equipment can identify defects on the surface of the sample and record the coordinates of the defects, which are the precise coordinates of the defects in the sample coordinate system.

[0074] This embodiment does not limit the specific type of the sample to be tested. The sample to be tested may be, but is not limited to, a photomask substrate, a photomask, a wafer, or a chip.

[0075] Step 2: After scanning, multiple micron-sized defect marks are formed on the surface of the sample around the defect along the circumferential direction according to the coordinates of the defect.

[0076] It should be noted that in this embodiment, when the surface of the sample to be tested includes at least two defects, multiple micron-sized defect marks need to be formed on the surface of the sample to be tested around each defect along the circumferential direction according to the coordinates of each defect.

[0077] This embodiment does not limit the specific number of defect markers, as long as they surround the defect. For example, a micron-sized defect marker can be formed on the surface of the sample to be tested in four directions: above, below, left, and right, based on the coordinates of the defect.

[0078] This embodiment does not limit the distance between the defect mark and the defect. It can be determined according to the actual size of the defect. For example, multiple micron-sized defect marks can be formed on the surface of the sample to be tested around the defect, at a distance of 1 μm to 10 μm from the center of the defect, along the circumferential direction.

[0079] This embodiment does not limit the specific method of forming defect marks, as long as the size of the defect marks that can be formed is on the micrometer scale. For example, the control system in the mark generation device reads the coordinates of the defect and drives the defect mark generation device in the mark generation device to form multiple micrometer-sized defect marks on the surface of the sample to be tested around the defect in the circumferential direction according to the coordinates of the defect. The defect mark generation device includes a diamond probe or a laser head.

[0080] It should be noted that in this embodiment, a diamond probe or laser head can be used to impact or etch the surface of the sample under test at the micrometer level, forming a unique set of defect marks that are clearly visible under a low-power microscope. This array of defect marks can itself serve as a reference for subsequent positioning.

[0081] This embodiment does not limit the specific type of marking generation device. Any device that integrates a diamond probe or a laser etching system (the laser etching system includes a laser head) can be used. For example, the marking generation device may include a precision marking platform or a defect detection device.

[0082] It should be noted that in this embodiment, when the marking generating device uses a precision marking platform, after the defect detection device scans the sample to be tested, the sample needs to be transferred to the precision marking platform; when the marking generating device uses a defect detection device, after the defect detection device scans the sample to be tested, the sample does not need to be moved and the sample to be tested remains in the defect detection device.

[0083] Step 3: Under the microscope, locate the defect and its marker based on the defect coordinates, and form a pointing mark on the sample surface on the side of the defect marker away from the defect; the pointing mark points towards the defect.

[0084] It should be noted that, in this embodiment, the process of locating the defect and its marker based on the defect's coordinates under a microscope may include:

[0085] The marked sample to be tested is placed under the microscope; the microscope has a large-stroke stage (the maximum distance the stage can move horizontally is relatively large);

[0086] The microscope stage automatically moves the sample to be tested according to the coordinates of the defect until the area including the defect appears in the microscope's field of view.

[0087] Under a microscope, locate the defect and the micron-sized defect markers around it.

[0088] This embodiment does not limit the specific type of microscope. The microscope may include, but is not limited to, optical microscopes, and optical microscopes may include, but are not limited to, confocal microscopes.

[0089] It should be noted that the pointing markers are directional markers placed near the defect marker array, but do not cover the defects themselves. The pointing markers can help to visually locate the defects and the approximate location of the defect markers in subsequent defect analysis.

[0090] This embodiment does not limit the specific type of the pointing mark, as long as it can point to the defect mark. For example, the pointing mark may include an arrow.

[0091] This embodiment does not limit the specific method of the pointing mark. Any tool that can leave a permanent visible mark on the surface of the sample to be tested can be used. For example, a marker can be used to draw a pointing mark on the surface of the sample to be tested on the side of the defect mark away from the defect mark. The marker can include a fine-tipped marker.

[0092] It should be noted that the marking methods such as diamond drill bits, laser heads, and markers used in this embodiment are all mature, stable, and low-cost technical solutions. They are easy to implement and promote in existing production lines and analytical laboratories, and have high practicality and economy. This makes the failure method provided in this embodiment reliable and cost-effective.

[0093] Furthermore, in this embodiment, a special mark can also be formed on the surface of the sample to be tested on the side of the defect mark that is opposite to the defect mark.

[0094] It should be noted that in this embodiment, directional marks and special marks can be formed at different positions on the surface of the sample to be tested; the special marks are marks that include numbers.

[0095] This embodiment does not limit the specific method of forming the special mark. The method of forming the special mark can be the same as the method of forming the pointing mark, or it can be different.

[0096] Step 4: After forming the pointing mark, add a distance mark to the microscope interface; the distance mark is located between the pointing mark and the defect mark; the distance mark includes the distance value between the pointing mark and the adjacent defect mark.

[0097] It should be noted that, in this embodiment, the distance marker represents the distance between the end of the pointer marker and the nearest defect marker in digital form. The process of adding distance markers to the microscope interface in this embodiment may include: measuring and recording the distance between the end of the pointer marker and the nearest defect marker in the microscope's computer software interface, and saving it as a distance marker in digital form in the image or data file including the defect.

[0098] Step 5: In the failure analysis equipment, locate the position of the defect mark based on the pointing mark and distance mark, and locate the defect based on the defect mark.

[0099] This embodiment does not limit the specific method of locating the defect, as long as it can be found with the assistance of the pointing marker, distance marker, and defect marker. For example, the following methods can be used:

[0100] Transfer the sample to be tested to the failure analysis equipment;

[0101] By visually locating the directional markers, the sample stage in the failure analysis equipment can be quickly positioned to the large area where the defect is located.

[0102] Locate the array of defect markers (micrometer scale) at low magnification, and navigate to the defect markers based on the pointing and distance markers;

[0103] The defect (nanometer-scale) is located based on the defect marker.

[0104] This embodiment does not limit the specific number of failure analysis devices; different failure analysis devices all need to execute steps 5 and 6 in sequence.

[0105] Step 6: After locating the defect, perform failure analysis on the defect using failure analysis equipment to obtain the analysis results.

[0106] This embodiment does not limit the specific type of failure analysis equipment; it can be determined according to the type of data that needs to be analyzed, for example:

[0107] (1) Failure analysis can be performed on the first parameters of the defect surface and cross section using a first failure analysis device; the first failure analysis device includes at least one of SEM equipment, FIB equipment, EDS (Energy Dispersive Spectroscopy) equipment and TEM (Transmission Electron Microscope) equipment; the first data includes at least one of size, morphology and elemental composition;

[0108] (2) Failure analysis of the second parameter of the defect can be performed by a second failure analysis device; the second failure analysis device includes an AFM device; the second data includes physical performance parameters; the physical performance parameters include at least one of roughness, modulus and adhesion force;

[0109] Accordingly, the analysis results may include at least one of the following: size, morphology, elements, roughness, modulus, and adhesion.

[0110] Based on the above embodiments, this application achieves seamless and precise positioning across scales and devices: through a multi-level marking system combining "micrometer-level defect markers" and "macroscopic pointing markers," supplemented by "digital distance markers," it perfectly solves the transition problem from macroscopic positioning (such as naked eye, optical microscope) to microscopic analysis (such as failure analysis equipment, including SEM equipment, FIB equipment, AFM equipment); among which, pointing markers ensure that the general area is found quickly, while distance markers provide precise navigation, greatly shortening the time for searching for defects under high magnification equipment, improving analysis efficiency by several times, and effectively avoiding defect loss; preferably, based on the introduction of a multi-level marking system, a unified coordinate transformation mechanism is further established.

[0111] To address the compatibility and coordinate unification issues among multi-source devices, this application provides a second failure analysis method. By establishing a unified coordinate transformation mechanism and setting flexible coordinate offsets in the alignment microscope, the same microscope can be compatible with and accurately match coordinate data from defect detection equipment from different manufacturers and models, thereby improving the versatility and flexibility of the analysis platform.

[0112] Please refer to Figure 2 , Figure 2 This is a flowchart of a second failure analysis method provided in an embodiment of this application. Unlike the first failure analysis method embodiment, this embodiment includes step 30 before step 3. The remaining details have been described in detail in the first failure analysis method embodiment and will not be repeated here.

[0113] In this embodiment, before step 3, the following may also be included:

[0114] Step 30: Set the coordinate offset in the microscope according to the coordinates of different models of defect detection equipment; the coordinate offset is the coordinate offset between the defect detection equipment and the microscope.

[0115] It should be noted that step 30 in this embodiment can be performed before or after the step of placing the marked sample under the microscope.

[0116] This embodiment does not limit the specific method of setting the coordinate offset, as long as it ensures that the uniform calibration of the coordinate system can be completed. For example, the following methods can be used:

[0117] In the microscope's software interface, enter or select the model of the defect detection equipment used previously;

[0118] After determining the model, retrieve the pre-stored or manually set coordinate offset between the defect detection equipment and the microscope.

[0119] It should be noted that, by setting the coordinate offset in the microscope, this embodiment allows the same microscope to support coordinate matching for devices from multiple manufacturers and models.

[0120] Based on the above embodiments, this application improves the versatility and flexibility of the analysis platform: by establishing a unified coordinate transformation mechanism and introducing a configurable "coordinate offset" function in the alignment microscope, the coordinate system barrier between different brands and models of defect detection equipment is broken; the same analysis system can be adapted to a variety of front-end detection equipment without complex modifications, reducing equipment dependence and maintenance costs, and enhancing analysis capabilities in heterogeneous equipment environments.

[0121] To address the disconnect between analytical data and production information, this application provides a third failure analysis method. By establishing a database, failure analysis results (size, morphology, elements, physical properties, etc.) can be associated with production data to construct a complete defect information archive, thereby achieving structured management and traceability of analytical data. Preferably, a database containing special marker numbers is established.

[0122] Please refer to Figure 3 , Figure 3 This is a flowchart of the third failure analysis method provided in the embodiments of this application. Unlike the embodiments of the first failure analysis method, this embodiment includes step 7 after step 6. The remaining details have been described in detail in the embodiments of the first failure analysis method and will not be repeated here.

[0123] In this embodiment, after step 6, the following may also be included:

[0124] Step 7: Enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

[0125] It should be noted that the database in this embodiment can be integrated and connected with the MES (Manufacturing Execution System) system to automatically associate failure analysis results with production data through the MES system.

[0126] It should be noted that the source of the defect in this embodiment may include the ID (Identification) of the sample under test and the process stage in which the defect occurred. In addition to the above-mentioned data, the analysis data in this embodiment may also include other data.

[0127] This embodiment does not limit the specific method of entering the analysis data into the database, as long as it can be stored in the database. For example, the following methods can be used:

[0128] Step 71: Create a database; the database fields include the special mark number and analysis data; the special mark is a numbered mark pre-formed on the surface of the sample to be tested on the side opposite to the defect mark; the analysis data includes the coordinates of the defect, analysis results, the source of the defect, the analyst, and the analysis date, each with corresponding fields;

[0129] Step 72: Using the special marker number as the primary key, enter the analysis data into the corresponding field of the database to establish a one-to-one correspondence between the special marker number and the analysis data, that is, the special marker number can correspond to all the analysis data obtained from the failure analysis of the defect.

[0130] Based on the above embodiments, this application constructs a complete and structured closed loop of defect information: by establishing a database, microscopic analysis data (morphology, elements, physical properties) is associated with production line data and stored in a structured manner in the database. This not only realizes traceable management of analysis data, but more importantly, it accumulates a high-quality and highly correlated data foundation for big data analysis and artificial intelligence diagnosis; preferably, a database containing special marker numbers is established to use the "special marker" as a unique identifier.

[0131] To achieve rapid and intelligent feedback and root cause tracing of process problems, this application provides a fourth failure analysis method. By connecting the database with the MES system, it can automatically feed back the root cause of defects to the corresponding process links based on the analyzed key information (such as specific elements) and provide defect cause prediction, thereby guiding the rapid optimization of the production process, forming a quality control closed loop, and ultimately improving product yield.

[0132] Please refer to Figure 4 , Figure 4 This is a flowchart illustrating the fourth failure analysis method provided in this application. Unlike the third failure analysis method embodiment, this embodiment includes step 8 after step 7. The remaining details have been described in detail in the third failure analysis method embodiment and will not be repeated here.

[0133] In this embodiment, after step 7, the method further includes:

[0134] Step 8: When key information is detected in the entered analysis data, feedback information is generated and pushed to the MES system, so that the MES system can feed back the feedback information to the corresponding process segment and provide the cause of the defect; the MES system is integrated with the database.

[0135] This embodiment does not limit the specific method of integrating the MES system and the database, as long as data exchange can be achieved. For example, the MES system and the database can exchange data through an interface; correspondingly, feedback information can be pushed to the MES system through an interface.

[0136] This embodiment does not limit the specific triggering method, as long as it can trigger the automatic generation of feedback information. For example, the following methods can be used:

[0137] Set the field corresponding to specific analysis data in the database as the trigger condition;

[0138] When key information is detected in specific analysis data, feedback information is generated; the specific analysis data can be any type of analysis data.

[0139] It should be noted that in this embodiment, when it is detected that the entered analysis data does not include key information, only the entered analysis data is stored in the database.

[0140] The feedback information in this embodiment may include various information about the defect. For example, the feedback information may include specific analysis data exceeding the standard, that is, exceeding a preset threshold.

[0141] This embodiment does not limit the specific method of feeding back feedback information to the corresponding process segment. For example, the MES system can feed back feedback information to the corresponding process segment based on the source of the defect (such as the process segment in which the defect occurs) included in the key information and analysis data; the process segment may include the equipment or process step that generates the defect.

[0142] This embodiment does not limit the specific way of providing the cause of the defect. As long as the possible cause of the defect can be provided, it is acceptable. For example, the cause of the defect can be inferred based on historical data models.

[0143] Furthermore, after providing the cause of the defect, this embodiment can also output an alarm or report to notify the relevant process engineers and guide them to conduct troubleshooting and process optimization.

[0144] Based on the above embodiments, this application achieves intelligent feedback from analysis to process improvement: transcending the traditional scope of single defect analysis, a real-time feedback closed loop is constructed through the integration of the database and the MES system. The system can automatically locate the root cause of defects to specific process steps and provide cause predictions, directly providing process engineers with feasible improvement suggestions, thereby accelerating the yield improvement cycle and elevating the value of failure analysis from "post-event diagnosis" to "pre-event warning and process optimization".

[0145] The following describes a failure analysis system provided by an embodiment of this application. The failure analysis system described below can be referred to in correspondence with the failure analysis method described above.

[0146] Please refer to Figure 5 , Figure 5 This application provides a structural block diagram of a failure analysis system, which may include: a defect marking module 100 and a failure analysis module 200.

[0147] Defect marking module 100 is used to perform:

[0148] Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample and determine the coordinates of the defects; the surface of the sample to be tested includes at least one defect;

[0149] Step 2: After scanning, multiple micron-sized defect marks are formed on the surface of the sample around the defect along the circumferential direction according to the coordinates of the defect;

[0150] Failure analysis module 200 is used to perform:

[0151] Step 3: Under the microscope, locate the defect and its marker based on the defect's coordinates, and form a pointing mark on the sample surface on the side of the defect mark away from the defect; the pointing mark points towards the defect.

[0152] Step 4: After forming the pointing mark, add a distance mark to the microscope interface; the distance mark includes the distance value between the pointing mark and the adjacent defect mark;

[0153] Step 5: In the failure analysis equipment, locate the position of the defect mark based on the pointing mark and distance mark, and locate the defect based on the defect mark;

[0154] Step 6: After locating the defect, perform failure analysis on the defect using failure analysis equipment to obtain the analysis results.

[0155] Based on the above embodiments, this application is used to perform the above failure analysis method, and therefore has the same beneficial effects as described above.

[0156] Based on the above embodiments, the failure analysis system may further include: a data input module 300;

[0157] The data entry module 300 is used to perform step 7: enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

[0158] Based on the above embodiments, the failure analysis system may further include: a feedback system module 400;

[0159] The feedback system module 400 is used to execute step 8: when it detects that the entered analysis data includes key information, it generates feedback information and pushes the feedback information to the MES system, so that the MES system can feed back the feedback information to the corresponding process segment and provide the cause of the defect; the MES system is integrated with the database.

[0160] Based on the above embodiments, step 7 includes:

[0161] Step 71: Create a database; the database fields include the special mark number and analysis data; the special mark is a numbered mark pre-formed on the surface of the sample to be tested on the side opposite to the defect mark.

[0162] Step 72: Using the special marker number as the primary key, enter the analysis data into the corresponding field in the database to establish a one-to-one correspondence between the special marker number and the analysis data.

[0163] Based on the above embodiments, before step 3, the following is also included:

[0164] Step 30: Set the coordinate offset in the microscope according to the coordinates of different models of defect detection equipment; the coordinate offset is the coordinate offset between the defect detection equipment and the microscope.

[0165] Based on the above embodiments, step 3 includes:

[0166] Use a marker to draw directional marks on the surface of the sample to be tested on the side of the defect mark that is away from the defect mark.

[0167] Based on the above embodiments, step 2 includes:

[0168] The control system in the marking generation device reads the coordinates of the defect and drives the defect marking generation device in the marking generation device to form multiple micron-sized defect marks on the surface of the sample to be tested around the defect in the circumferential direction according to the coordinates of the defect; the defect marking generation device includes a diamond probe or a laser head.

[0169] Based on the above embodiments, step 5 includes:

[0170] Transfer the sample to be tested to the failure analysis equipment;

[0171] Locate the pointing marker with the naked eye;

[0172] Locate the defect marker array at low magnification, and navigate to the defect marker based on the pointing marker and distance marker;

[0173] The defect is located based on the defect marker.

[0174] The following describes a defect marking structure provided in an embodiment of this application. The defect marking structure described below can be referred to in correspondence with the defect marking structure used in the failure analysis method described above.

[0175] Please refer to Figure 6 , Figure 6 This is a schematic diagram of a defect marking structure provided in an embodiment of this application. The defect marking structure can be applied to the failure analysis method described above. The defect marking structure includes: multiple micron-sized defect marks 21 disposed on the sample surface, as well as pointing marks 22 and distance marks 23; the sample surface includes at least one defect 1.

[0176] Defect marker 21 is arranged around defect 1 in the circumferential direction;

[0177] Pointer mark 22 is located on the side of defect mark 21 that is away from defect 1; pointer mark 22 points to defect 1;

[0178] Distance marker 23 is located between pointer marker 22 and defect marker 21; distance marker 23 includes the distance value between pointer marker 22 and adjacent defect marker 21.

[0179] This embodiment does not limit the specific number of defect markers 21, as long as they surround the defect 1. For example, it may include four defect markers 21; the four defect markers 21 are located in the four directions of the defect 1, namely above, below, left and right.

[0180] This embodiment does not limit the distance between defect mark 21 and defect 1. It can be determined according to the actual size of defect 1. For example, defect mark 21 can be 1μm to 10μm away from the center of defect 1.

[0181] This embodiment does not limit the specific type of the pointing mark 22, as long as it can point to the defect mark 21. For example, the pointing mark 22 may include an arrow.

[0182] Furthermore, the defect marking structure in this embodiment may also include: a special mark 24 set on the sample surface;

[0183] Special mark 24 is located on the side of defect mark 21 opposite to defect 1; special mark 24 is a mark that includes a number.

[0184] Based on the above embodiments, this application is applied to the above failure analysis method, and therefore has the same beneficial effects as described above.

[0185] The failure analysis process described above is illustrated below with specific examples. Please refer to them. Figure 6 , Figure 7 and Figure 8 , Figure 6 This is a schematic diagram of a defect marking structure provided in an embodiment of this application. Figure 7 This is a flowchart illustrating a failure analysis method provided in an embodiment of this application. Figure 8 This is a schematic diagram of a process for forming a defect marker structure, provided in an embodiment of this application.

[0186] This embodiment provides a failure analysis method that integrates precise positioning, cross-device correlation, data management, and intelligent feedback. This method is particularly suitable for the rapid and accurate positioning, analysis, data entry, and root cause tracing of micro- and nano-scale defects in samples such as photomask substrates, photomasks, wafers, and chips. The specific method is as follows:

[0187] Step 1, Defect Marking:

[0188] 1.1 Place the sample to be tested (such as a photomask substrate, photomask, wafer, or chip) into a defect detection device for full-surface scanning; the defect detection device identifies defect 1 on the surface of the sample to be tested and records its precise coordinates (X, Y) in the sample coordinate system; wherein, the surface of the sample to be tested includes at least one defect 1;

[0189] 1.2 After scanning, the sample to be tested is transferred to a precision marking platform or kept in a defect detection device; the precision marking platform or defect detection device includes a control system and integrates a diamond probe or laser etching system;

[0190] 1.3. The coordinates of defect 1 are read by the control system, and the laser head in the diamond probe or laser etching system is driven to perform micron-level impact or etching on the sample surface in four directions (up, down, left, and right) of each defect 1, depending on the size of defect 1, at a distance of approximately 1μm to 10μm from the center of defect 1. This forms a unique set of defect marks 21 that are clearly visible under a low-power microscope. This array of defect marks 21 can itself serve as a reference for subsequent positioning. Figure 8 (a) It can be seen that before performing step 1.3, the surface of the sample to be tested only includes defect 1; from Figure 8 As can be seen in (b), after completing step 1.3, each defect 1 forms a defect mark 21 in the four directions of top, bottom, left, and right;

[0191] Step 2, Failure Analysis:

[0192] 2.1 Place the marked sample under a microscope with a large-stroke stage (such as a confocal microscope);

[0193] 2.2 Coordinate Matching:

[0194] 2.2.1 In the microscope's software interface, enter or select the model of the defect detection equipment used previously;

[0195] 2.2.2 The system will call the pre-stored or manually set coordinate offset between the defect detection device and the current microscope to complete the unified calibration of the coordinate system;

[0196] 2.3. Positioning and Macroscopic Marking:

[0197] 2.3.1 The microscope stage automatically moves the sample to be tested according to the coordinates of the calibrated defect 1 until the approximate area including defect 1 appears in the field of view of the microscope.

[0198] 2.3.2 Under the microscope, the operator locates defect 1 and the micron-sized defect marker 21 around it;

[0199] 2.3.3 Using a fine-tipped marker or other tool that can leave a persistent and visible mark on the surface of the sample to be tested, draw a pointing mark 22 (such as an arrow) on the surface of the sample to be tested (set near the array of defect marks 21, but without covering defect 1 itself), pointing to defect 1;

[0200] 2.3.4 Simultaneously, draw a special marker 24 containing a unique number (e.g., "QF250923-1") in another suitable location; from Figure 8 (c) and Figure 6 It can be seen that after completing step 2.3, a pointing mark 22, a distance mark 23, and a special mark 24 are formed around the defect mark 21;

[0201] 2.4. Digital Recording:

[0202] In the microscope's computer software interface, the distance between the end pointing to mark 22 and the nearest defect mark 21, for example 500 μm, is measured and recorded, and saved digitally as distance mark 23 in the image or data file including defect 1.

[0203] 2.5 Microscopic Analysis:

[0204] 2.5.1 Transfer the sample to be tested to failure analysis equipment such as SEM equipment or FIB equipment.

[0205] 2.5.2 The operator can quickly locate the sample stage in the failure analysis equipment to the large area where defect 1 is located by visually locating the pointing mark 22 left by the marker pen;

[0206] 2.5.3 Then, at low magnification, locate the micron-scale defect marker array 21, and based on the previously recorded distance marker 23 (e.g., 500 μm), precisely navigate to the center of the defect marker 21, thereby locating the nanometer-scale defect 1 itself;

[0207] 2.5.4. Use SEM and EDS equipment to perform surface morphology and elemental analysis of defect 1, use FIB equipment to prepare and analyze the cross section of defect 1, and use AFM equipment to measure physical property parameters such as surface roughness and modulus.

[0208] Step 3: Enter the data:

[0209] 3.1 Create a database whose fields should include, but are not limited to: the number of special mark 24, the coordinates of defect 1, the source of defect 1 (such as the ID of the sample to be tested, the process section in which defect 1 appears), the analysis results (such as size, morphology, elements, roughness, modulus, adhesion, etc.), the analyst, and the analysis date.

[0210] 3.2. Enter all the analysis data obtained in step 2 into the corresponding fields of the database, using the number of special marker 24 (e.g., "QF250923-1") as the primary key, to establish a one-to-one correspondence between the number of special marker 24 and the analysis data.

[0211] Step 4, Feedback System:

[0212] 4.1 Integrate the above database with the factory's MES system; wherein, the fields (especially "elements") corresponding to specific analytical data in the database are set as trigger conditions;

[0213] 4.2 When the entered analysis data contains key information about a specific element (such as "aluminum Al"), the system will automatically generate a feedback message (such as "Al element exceeds the standard"). This feedback message is pushed to the MES system through the interface. The MES system will automatically associate the specific element with the process segment where defect 1 occurs based on the process segment information, and will link it to the equipment or process step that is most likely to produce the element (e.g., feeding back "Al element exceeds the standard" to the "metal sputtering" process segment). At the same time, the MES system can infer the cause of defect 1 based on historical data models (such as "chamber contamination", "target life expired", etc.) and notify the relevant process engineers in the form of alarms or reports to guide them in troubleshooting and process optimization.

[0214] This document uses specific examples to illustrate the principles and implementation methods of this application. The various embodiments are progressive, with each embodiment focusing on its differences from others. Similar or identical parts between embodiments can be referred to interchangeably. The descriptions of the embodiments above are merely illustrative of the method and core ideas of this application. For those skilled in the art, various improvements and modifications can be made to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this application.

[0215] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

Claims

1. A failure analysis method, characterized in that, include: Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample to be tested and determine the coordinates of the defects; the surface of the sample to be tested includes at least one of the defects; Step 2: After scanning is completed, multiple micron-sized defect marks are formed on the surface of the sample to be tested around the defect along the circumferential direction according to the coordinates of the defect; Step 3: Under the microscope, locate the defect and the defect mark according to the coordinates of the defect, and form a pointing mark on the surface of the sample to be tested on the side of the defect mark away from the defect. The pointing marker points to the defect; Step 4: After forming the pointing mark, add a distance mark to the interface of the microscope; The distance marker is located between the directional marker and the defect marker; the distance marker includes a numerical value representing the distance between the directional marker and the adjacent defect marker. Step 5: In the failure analysis equipment, locate the position of the defect mark according to the pointing mark and the distance mark, and locate the defect according to the defect mark; Step 6: After locating the defect, perform failure analysis on the defect using the failure analysis equipment to obtain the analysis results.

2. The failure analysis method according to claim 1, characterized in that, After step 6, the following is also included: Step 7: Enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

3. The failure analysis method according to claim 2, characterized in that, After step 7, the method further includes: Step 8: When key information is detected in the entered analysis data, feedback information is generated and pushed to the MES system, so that the MES system feeds back the feedback information to the corresponding process segment and provides the cause of the defect; the MES system is integrated and connected with the database.

4. The failure analysis method according to claim 2, characterized in that, Step 7 includes: Step 71: Create the database; the database fields include the special mark number and the analysis data; the special mark is a numbered mark pre-formed on the surface of the sample to be tested on the side of the defect mark facing away from the defect; Step 72: Using the special marker number as the primary key, enter the analysis data into the corresponding field of the database to establish a one-to-one correspondence between the special marker number and the analysis data.

5. The failure analysis method according to any one of claims 1 to 4, characterized in that, Before step 3, the following is also included: Step 30: Set the coordinate offset in the microscope according to the coordinates of different models of the defect detection equipment; the coordinate offset is the coordinate offset between the defect detection equipment and the microscope.

6. The failure analysis method according to any one of claims 1 to 4, characterized in that, Step 3 includes: Use a marker to draw the pointing mark on the surface of the sample under test on the side of the defect mark that is opposite to the defect mark.

7. The failure analysis method according to any one of claims 1 to 4, characterized in that, Step 2 includes: The control system in the marking generation device reads the coordinates of the defect and drives the defect marking generation device in the marking generation device to form multiple micron-sized defect marks on the surface of the sample to be tested around the defect in the circumferential direction according to the coordinates of the defect; the defect marking generation device includes a diamond probe or a laser head.

8. The failure analysis method according to any one of claims 1 to 4, characterized in that, Step 5 includes: The sample to be tested is transferred to the failure analysis device; Locate the pointing marker with the naked eye; The defect marker array is located at low magnification, and the target marker and distance marker are used to navigate to the defect marker. The defect is located based on the defect marker.

9. A failure analysis system, characterized in that, include: Defect marking module and failure analysis module; The defect marking module is used to perform: Step 1: Scan the sample to be tested using a defect detection device to identify defects on the surface of the sample to be tested and determine the coordinates of the defects; the surface of the sample to be tested includes at least one of the defects; Step 2: After scanning is completed, multiple micron-sized defect marks are formed on the surface of the sample to be tested around the defect along the circumferential direction according to the coordinates of the defect; The failure analysis module is used to perform: Step 3: Under the microscope, locate the defect and the defect mark according to the coordinates of the defect, and form a pointing mark on the surface of the sample to be tested on the side of the defect mark away from the defect. The pointing marker points to the defect; Step 4: After forming the pointing mark, add a distance mark to the interface of the microscope; the distance mark includes the distance value between the pointing mark and the adjacent defect mark; Step 5: In the failure analysis equipment, locate the position of the defect mark according to the pointing mark and the distance mark, and locate the defect according to the defect mark; Step 6: After locating the defect, perform failure analysis on the defect using the failure analysis equipment to obtain the analysis results.

10. The failure analysis system according to claim 9, characterized in that, Also includes: Data entry module; The data entry module is used to perform step 7: enter the analysis data into the database; the analysis data includes the coordinates of the defect, the analysis results, the source of the defect, the analyst, and the analysis date.

11. The failure analysis system according to claim 10, characterized in that, Also includes: Feedback system module; The feedback system module is used to execute step 8: when it detects that the input analysis data includes key information, it generates feedback information and pushes the feedback information to the MES system, so that the MES system feeds back the feedback information to the corresponding process segment and provides the cause of the defect; the MES system is integrated and connected with the database.

12. A defect marking structure, characterized in that, The defect marking structure, applied to the failure analysis method according to any one of claims 1 to 8, comprises: a plurality of micron-sized defect markings disposed on the sample surface, as well as pointing markings and distance markings; the sample surface includes at least one defect; The defect markings are arranged circumferentially around the defect; The pointing mark is located on the side of the defect mark that is away from the defect; the pointing mark points towards the defect. The distance marker is located between the pointing marker and the defect marker; the distance marker includes the distance value between the pointing marker and the adjacent defect marker.

13. The defect marking structure according to claim 12, characterized in that, Also includes: Special markings are applied to the surface of the sample; The special mark is located on the side of the defect mark that is opposite to the defect; The special mark is a mark that includes a number.

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