Semiconductor structure

Abstract

The invention provides a semiconductor structure. The semiconductor structure includes a substrate. The substrate includes a first core having a first top surface and a first bottom surface. A first dielectric layer is disposed on the first top surface and the first bottom surface of the first core. The substrate has a first aperture through the first core. In addition, the substrate has a second aperture through the first core and the first dielectric layer.

Description

Technical Field

[0001] This invention relates to a semiconductor structure, and more particularly to a packaging substrate for conductive components with through-holes of different lengths. Background Technology

[0002] To ensure the miniaturization and versatility of electronic products and communication equipment, there is a demand for semiconductor packages that are small in size, support multi-pin connections, operate at high speeds, and possess high functionality. In recent years, there has been an increasing demand for semiconductor package structures that offer small size, high I / O pad density, high operating frequency, better functionality, better electrical performance and reliability, and low cost. However, a trade-off exists between power integrity and signal integrity within the package substrate.

[0003] Therefore, the industry is looking forward to a novel packaging substrate. Summary of the Invention

[0004] One embodiment of the present invention provides a semiconductor structure. The semiconductor structure includes a substrate. The substrate includes a first core having a first top surface and a first bottom surface. A first dielectric layer is disposed on the first top surface and the first bottom surface of the first core. The substrate has a first via through the first core and a second via through the first core and the first dielectric layer.

[0005] Another embodiment of the present invention provides a semiconductor structure. The semiconductor structure includes a substrate. The substrate includes a core structure. The core structure includes at least two cores and at least three first dielectric layers stacked on top of each other. The at least two cores are arranged alternately with the at least three first dielectric layers. The substrate has a first via through one of the first cores and the at least three first dielectric layers, and a second via through the first cores and all of the first dielectric layers. Attached Figure Description

[0006] A more complete understanding of the invention can be obtained by reading the following detailed description and referring to the accompanying drawings, wherein:

[0007] Figure 1 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0008] Figure 2 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0009] Figure 3 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0010] Figure 4 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0011] Figure 5 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0012] Figure 6 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0013] Figure 7 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0014] Figure 8 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0015] Figure 9 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0016] Figure 10 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0017] Figure 11 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0018] Figure 12 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0019] Figure 13 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0020] Figure 14 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention;

[0021] Figure 15 These are schematic cross-sectional views of semiconductor structures according to some embodiments of the present invention; and

[0022] Figure 16 This is a schematic cross-sectional view of a semiconductor structure according to some embodiments of the present invention. Detailed Implementation

[0023] The following description is intended to illustrate the general principles of the invention and should not be considered limiting. The best way to determine the scope of the invention is by referring to the appended claims.

[0024] Figure 1 This is a schematic cross-sectional view of a semiconductor structure 500A according to some embodiments of the present invention. Figure 1In the following figures, direction D100 is defined as the horizontal direction (also considered as the extension direction of the conductive layer and / or conductive traces), and direction D120 is defined as the vertical direction (also considered as the extension direction of vias and / or vias).

[0025] Semiconductor structure 500A includes substrate 200A. For example, substrate 200A may include a multilayer packaging substrate (e.g., a flip-chip ball grid array (FCBGA) substrate). Substrate 200A can provide mechanical support and electrical connection between an integrated circuit (IC) chip and conductive bumps attached to the top and bottom surfaces of substrate 200A. Substrate 200A can have various types of inclusions, such as a core-supported substrate, including thin cores, thick cores (e.g., laminated BT (bismaleimide-triazine resin) or FR-4 type fiberboard material), and laminated cores. Alternatively, a core-supported packaging substrate, for example, may be constructed layer by layer around a central core, with conductive material layers (typically copper) separated from insulating dielectric layers, and interlayer connections formed through vias or microvias.

[0026] In some embodiments, substrate 200A includes a core structure 220A and substrate redistribution layers 230-1 and 230-2. Furthermore, the core structure 220A includes a single core 202 and core redistribution layers 210-1 and 210-2. In this embodiment, substrate 200A may also be referred to as a multilayer single-core substrate.

[0027] like Figure 1 As shown, the core 202 has a top surface 202T and a bottom surface 202B. In some embodiments, the core 202 may be made of polypropylene, prepreg (PP), FR-4 and / or other epoxy laminate materials.

[0028] Core redistribution layers 210-1 and 210-2 are respectively disposed on the top surface 202T and bottom surface 202B of core 202. In some embodiments, each core redistribution layer 210-1 and 210-2 includes one or more conductive layers 208 and one or more vias 212 disposed in one or more dielectric layers 210.

[0029] In some embodiments, the dielectric layers 210 of core redistribution layers 210-1 and 210-2 are symmetrically (or asymmetrically) disposed on the top surface 202T and bottom surface 202B of core 202. For example, the number of dielectric layers 210 in core redistribution layer 210-1 is the same as (or different from) the number of dielectric layers 210 in core redistribution layer 210-2. In this embodiment, the dielectric layers 210 of core redistribution layers 210-1 and 210-2 are symmetrically disposed on the top surface 202T and bottom surface 202B of core 202. Each core redistribution layer 210-1 and 210-2 includes two dielectric layers 210. In some embodiments, the dielectric layers 210 may be made of prepreg (PP). Core 202 and dielectric layers 210 may contain glass fibers. In some embodiments, the dielectric layers 210 may be formed by a lamination process.

[0030] It should be noted that Figure 1 The number of vias 212, conductive layers 208, and dielectric layers 210 shown in the core redistribution layers 210-1 and 210-2 is merely an example and does not constitute a limitation on the present invention.

[0031] like Figure 1 As shown, separate holes TH1 and TH2 (or through-holes TH1 and TH2) are embedded in the core structure 220A of substrate 200A. In some embodiments, hole TH1 is formed only through core 202. Furthermore, hole TH2 is formed through core 202 and all dielectric layers 210 on the top surface 202T and bottom surface 202B of core 202. In some embodiments, in direction D120, the depth P1 of hole TH1 is substantially equal to the thickness T1 of core 202. Furthermore, the depth P2 of hole TH2 is substantially equal to the total thickness of core 202 and core redistribution layers 210-1 and 210-2. Therefore, the depth P1 of hole TH1 is less than the depth P2 of hole TH2. In some embodiments, holes TH1 and TH2 are formed by a drilling process (e.g., mechanical drilling).

[0032] Conductive material 204 is disposed in hole TH1, and conductive material 206 is disposed in hole TH2. In some embodiments, such as Figure 1 As shown, each conductive material portion 204, 206 can be formed as a thin conductive layer lining the inner walls of holes TH1 and TH2. The conductive material 204 in hole TH1 and the conductive material 206 in hole TH2 can be hollow cylindrical. The conductive materials 204 and 206 can also be referred to as through-hole conductive components 204 and 206.

[0033] In some embodiments, the two terminals 204T1 and 204T2 of the conductive material 204 in hole TH1 are not aligned in direction D100 with the two corresponding terminals 206T1 and 206T2 of the conductive material 206 in hole TH2. For example, the two terminals 204T1 and 204T2 of the conductive material 204 in hole TH1 may be close to the top surface 202T and bottom surface 202B of the core 202, respectively. Furthermore, the two terminals 204T1 and 204T2 of the conductive material 204 in hole TH1 may be exposed from the top surface 202T and bottom surface 202B of the core 202, respectively. In some embodiments, the two terminals 206T1 and 206T2 of the conductive material 206 in hole TH2 may be close to the top surface 220AT and bottom surface 220AB of the core structure 220A, respectively. Furthermore, the two terminals 206T1 and 206T2 of the conductive material 206 in the hole TH2 can be exposed from the top surface 220AT and the bottom surface 220AB of the core structure 220A, respectively.

[0034] In some embodiments, the terminals 204T1 of the conductive material 204 in via TH1 and the terminals 206T1 of the conductive material 206 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-1. For example, the terminals 204T1 of the conductive material 204 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the top surface 202T of the core 202. The terminals 206T1 of the conductive material 206 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-1 (also the top surface 220AT of the core structure 220A), which is close to the top surface 220AT of the core structure 220A.

[0035] In other words, the terminal 204T1 of the conductive material 204 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the core 202. The terminal 206T1 of the conductive material 206 in the hole TH2 is close to the outer surface (also the top surface 220AT) of a dielectric layer 210 of the core redistribution layer 210-1, which is far from the core 202.

[0036] Similarly, terminals 204T2 of conductive material 204 in via TH1 and terminals 206T2 of conductive material 206 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminals 204T2 of conductive material 204 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the bottom surface 202B of the core 202. Terminals 206T2 of conductive material 206 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-2 (also the bottom surface 220AB of the core structure 220A), which is close to the bottom surface 220AB of the core structure 220A.

[0037] In other words, the terminal 204T2 of the conductive material 204 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the core 202. The terminal 206T1 of the conductive material 206 in the hole TH2 is close to the outer surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the bottom surface 220AB), which is far from the core 202.

[0038] In some embodiments, in direction D120, the size L1 of the conductive material 204 is approximately equal to the thickness of the core 202. Furthermore, the size L2 of the conductive material 206 is approximately equal to the total thickness of the core 202 and the core redistribution layers 210-1 and 210-2. Therefore, the size L1 of the conductive material 204 is smaller than the size L2 of the conductive material 206.

[0039] In some embodiments, conductive materials 204 and 206 comprise copper or nickel-copper and are formed by an electroplating process, such as electroless plating, electroplating, or electroless plating. For example, conductive materials 204 and 206 may also be referred to as plated through-hole (PTHs) 204 and 206.

[0040] like Figure 1 As shown, the semiconductor structure 500A further includes a non-conductive material 205 (comprising non-conductive material portions 205-1 and 205-2) that fills the remaining space of vias TH1 and TH2 and is surrounded by conductive materials 204 and 206. For example, non-conductive material portion 205-1 may fill via TH1 and be surrounded by conductive material 204. Furthermore, non-conductive material portion 205-2 may fill via TH2 and be surrounded by conductive material portion 206. In some embodiments, the non-conductive material 205 comprises epoxy resin, such as ink.

[0041] like Figure 1As shown, the core structure 220A further includes a conductive layer 208 formed directly on the top surface 202T and bottom surface 202B of the core 202, respectively. In some embodiments, the conductive layer 208 may cover the hole TH1, the conductive material 204 on the inner wall of the hole TH1, and the non-conductive material 205 filling the hole TH1. For example, the conductive layer 208 may completely cover the hole TH1 and the conductive material 204 and non-conductive material 205 in the hole TH1. Furthermore, the conductive layer 208 may be connected (coupled) to the conductive material 204 on the inner wall of the hole TH1.

[0042] like Figure 1 As shown, the conductive layer 208 can partially cover the top surface 202T and bottom surface 202B of the core 202. Furthermore, the dielectric layers 210 of the core redistribution layers 210-1 and 210-2 can be respectively disposed on the conductive layer 208. Additionally, the dielectric layers 210 of the core redistribution layers 210-1 and 210-2 can cover the conductive layer 208, holes TH1 and TH2, the conductive material 204 on the inner wall of hole TH1, the conductive material 206 on the inner wall of hole TH2, and the non-conductive material 205 filling holes TH1 and TH2.

[0043] In some embodiments, the conductive layer 208 on each level of the core redistribution layers 210-1 and 210-2 may include a set of conductive traces (not shown) or conductive planes (also referred to as ground planes) (not shown). In some embodiments, the conductive layer 208 includes a conductive material, such as a metal comprising copper, gold, silver, or other suitable metals. For example, the conductive layer 208 may be a copper trace 208.

[0044] like Figure 1 As shown, via 212 is disposed in the dielectric layer 210 of the core redistribution layers 210-1 and 210-2. Via 212 can be formed through the dielectric layer 210 of the core redistribution layers 210-1 and 210-2 to couple to the conductive layer 208. In some embodiments, via 212 can be formed by laser drilling.

[0045] It should be noted that the conductive layer 208 and the through hole 212 are arranged side by side and separated from the conductive material 206 on the inner wall of the hole TH2 in the direction D100.

[0046] like Figure 1As shown, the semiconductor structure 500A further includes substrate redistribution layers (RDLs) 230-1 and 230-2. The substrate redistribution layers 230-1 and 230-2 are disposed on the core redistribution layers 210-1 and 210-2, respectively. In some embodiments, each substrate redistribution layer 230-1 and 230-2 includes one or more conductive layers 224 (including conductive layers 224-1 and 224-2) and one or more vias 222 (including vias 222-1 and 222-2) disposed in one or more dielectric layers 230. It should be noted that... Figure 1 The number of vias 222, conductive layers 224, and dielectric layers 230 shown are merely examples and do not limit the invention.

[0047] In some embodiments, substrate redistribution layers 230-1 and 230-2 are connected to (or coupled to) conductive material 204 in via TH1 and conductive material 206 in via TH2. More specifically, conductive material 204 in via TH1 can be coupled to conductive layer 208 of core redistribution layers 210-1 and 210-2. Conductive layer 208 can be connected to (or coupled to) corresponding vias 212 in dielectric layer 210 of core redistribution layers 210-1 and 210-2. Vias 212 in dielectric layer 210 can be connected to (or coupled to) vias 222 and conductive layer 224 in substrate redistribution layers 230-1 and 230-2. In other words, conductive material 204 in via TH1 can be coupled to substrate redistribution layers 230-1 and 230-2 through conductive layer 208 and via 212 of core redistribution layers 210-1 and 210-2. Furthermore, the conductive material 206 in the hole TH2 can be directly connected to (or coupled to) the substrate redistribution layers 230-1 and 230-2 without using the conductive layer 208 and the via 212 of the core redistribution layers 210-1 and 210-2.

[0048] like Figure 1 As shown, conductive layers 224-1 and 224-2 can partially cover the top surface 220AT and bottom surface 220AB of the core structure 220A. Furthermore, dielectric layers 230 of substrate redistribution layers 230-1 and 230-2 can be disposed on conductive layers 224-1 and 224-2, respectively. Additionally, the dielectric layers 230 of substrate redistribution layers 230-1 and 230-2 can cover conductive layers 224-1 and 224-2.

[0049] In some embodiments, the conductive layers 224-1 and 224-2 of each level of the substrate redistribution layers 230-1 and 230-2 may include a set of conductive traces (not shown) or conductive planes (also referred to as ground planes) (not shown). In some embodiments, conductive layer 224-1 is directly coupled to vias 212 of the core redistribution layers 210-1 and 210-2, at the interface between the core redistribution layer 210-1 and the corresponding substrate redistribution layer 230-1 (also located on the top surface 220AT of the core structure 220A), and at the interface between the core redistribution layer 210-2 and the corresponding substrate redistribution layer 230-2 (also located on the bottom surface 220AB of the core structure 220A). In some embodiments, conductive layer 224-2 is directly coupled to conductive material 206 in via TH2. In some embodiments, conductive layers 208 and 224 may have the same or similar materials and processes.

[0050] like Figure 1 As shown, vias 222-1 and 222-2 are disposed in the dielectric layer 230 of the substrate redistribution layers 230-1 and 230-2. Via 222-1 may be formed through the dielectric layer 230 of the substrate redistribution layers 230-1 and 230-2, and coupled to the conductive material 204 in via TH1 via the conductive layer 208 covering the dielectric layer 210 and the conductive layer 224-1 covering the dielectric layer 230. Via 222-2 may be formed through the dielectric layer 230 of the substrate redistribution layers 230-1 and 230-2, and coupled to the conductive material 206 in via TH2 only via the conductive layer 224-1 covering the dielectric layer 230. In some embodiments, vias 212 and 222 may have the same or similar materials and processes.

[0051] In some embodiments, the dielectric layers 230 of the substrate redistribution layers 230-1 and 230-2 are symmetrically (or asymmetrically) disposed on the top surface 220AT and bottom surface 220AB of the core structure 220A. In some embodiments, at least two dielectric layers 230 are disposed on the top surface 220AT and bottom surface 220AB of the core structure 220A and connected to the outer dielectric layers 210 of the core redistribution layers 210-1 and 210-2. For example, the number of dielectric layers 230 in the substrate redistribution layer 230-1 is the same as (or different from) the number of dielectric layers 230 in the substrate redistribution layer 230-2.

[0052] In some embodiments, dielectric layers 210 and 230 are made of different materials and formed by different processes. In this embodiment, dielectric layer 230 comprises Ajinomoto Build-Up Film (ABF). In this embodiment, dielectric layer 230 can be formed by coating or lamination.

[0053] In some embodiments, the dielectric constant of dielectric layer 230 may differ from that of dielectric layer 210. For example, the dielectric constant of dielectric layer 230 may be lower than that of dielectric layer 210.

[0054] Due to the characteristics of the materials and manufacturing processes of dielectric layers 210 and 230, the core redistribution layers 210-1 and 210-2 and the substrate redistribution layers 230-1 and 230-2 may have different wiring densities. For example, when dielectric layer 210 is formed from prepreg (PP) and dielectric layer 230 is formed from ABF, the wiring density of substrate redistribution layers 230-1 and 230-2 may be greater than that of core redistribution layers 210-1 and 210-2.

[0055] The conductive traces of the conductive layer 208 in the core redistribution layers 210-1 and 210-2 may have a first minimum linewidth and spacing, while the conductive traces of the conductive layer 224 in the substrate redistribution layers 230-1 and 230-2 may have a second minimum linewidth and spacing smaller than the first minimum linewidth and spacing. Furthermore, the vias 212 in the core redistribution layers 210-1 and 210-2 may have a first diameter D1, while the vias 222 in the substrate redistribution layers 230-1 and 230-2 may have a second diameter D2 smaller than the first diameter D1.

[0056] like Figure 1 As shown, the semiconductor structure 500A further includes solder mask layers 240-1 and 240-2 disposed on respective substrate redistribution layers 230-1 and 230-2. In some embodiments, solder mask layers 240-1 and 240-2 may cover the conductive layer 224 on the outermost dielectric layer 230 of the substrate redistribution layers 230-1 and 230-2. Furthermore, solder mask layers 240-1 and 240-2 may have openings (not shown) to expose corresponding conductive pads (not shown). In some embodiments, solder mask layers 240-1 and 240-2 may comprise epoxy resin.

[0057] In some embodiments, the core structure 220A of the semiconductor structure 500A includes a dielectric layer 210 formed of, for example, prepreg (PP), which can improve the mechanical strength of the core structure 220A to withstand various external forces without breaking or yielding.

[0058] In some embodiments, the substrate 200A of the semiconductor structure 500A is provided with various types of conductive wiring for power transmission and signal transmission. In some embodiments, conductive material 204 in the hole TH1 of the core 202 of the core structure 220A, conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2, and conductive traces and vias 222-1 of the conductive layers 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH1 for power transmission (also referred to as power wiring PH1). For example, power wiring PH1 may include a positive power supply voltage VDD, a ground power supply voltage VSS, an overdrive voltage signal (e.g., a signal greater than VDD), a negative power supply voltage signal, and other power supply voltage signals. In some embodiments, the wiring density of conductive wiring PH1 in the core redistribution layers 210-1 and 210-2 is lower than the wiring density of conductive wiring PH1 in the substrate redistribution layers 230-1 and 230-2, depending on the material and process characteristics of the dielectric layers 210 and 230. For example, the conductive traces of the conductive layer 208 in the core redistribution layers 210-1 and 210-2 have a wider minimum linewidth and a larger spacing than the conductive traces of the conductive layer 224-1 of the conductive wiring PH1 in the substrate redistribution layers 230-1 and 230-2. Furthermore, the diameter D1 of the via 212 of the conductive wiring PH1 in the core redistribution layers 210-1 and 210-2 is larger than the diameter D2 of the via 222-1 of the conductive wiring PH1 in the substrate redistribution layers 230-1 and 230-2. Therefore, the conductive wiring PH1 has improved power integrity, making it suitable for power transmission.

[0059] Furthermore, the conductive material 206 passing through the hole TH2 of the core structure 220A, as well as the conductive traces and vias 222-2 of the conductive layers 224-2 of the substrate redistribution layers 230-1 and 230-2, can form conductive wiring PH2 (also known as signal wiring PH2) for signal transmission. Since the conductive material 206 is formed in the hole TH2 throughout the dielectric layer 210 of the core 202 and the core redistribution layers 210-1 and 210-2, the conductive wiring PH2 may have fewer interfaces between the vias and conductive traces of the redistribution layers (e.g., the conductive wiring PH2 can be formed without the conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2). Therefore, the conductive wiring PH2 has improved signal integrity and is suitable for signal transmission.

[0060] Since the core structure 220A of the substrate 200A of the semiconductor structure 500A is a single-core structure consisting of a single core 202 and a dielectric layer 210 disposed on the opposite surface of the core 202, and is formed from prepreg (PP), the mechanical strength of the substrate 200A is improved. Furthermore, conductive material 204 passing only through the core 202 can form conductive wiring PH1 suitable for power transmission. Conductive material 206 passing through the core structure 220A can form conductive wiring PH2 suitable for signal transmission. Therefore, the semiconductor structure 500A can achieve a balance between power integrity and signal integrity.

[0061] Figure 2 This is a schematic cross-sectional view of a semiconductor structure 500B according to some embodiments of the present invention. The elements of the following embodiments are consistent with those in the previous references. Figure 1 The same or similar elements described will not be repeated.

[0062] like Figure 1 and Figure 2 As shown, the difference between semiconductor structure 500A and semiconductor structure 500B includes at least the following: the substrate 200B of semiconductor structure 500B includes conductive material 304 formed as a conductive solid pillar filling the hole TH1 of core structure 220B. Conductive material 304 is also referred to as through-hole conductive component 304.

[0063] In some embodiments, because the conductive material 304 needs to completely fill the via TH1, the size (e.g., diameter) of the via TH1 in semiconductor structure 500B is typically smaller than the size (e.g., diameter) of the via TH1 in semiconductor structure 500A. Alternatively, depending on the design, the via TH1 in semiconductor structures 500A and 500B may have the same size (e.g., diameter). To meet signal integrity requirements, the via conductive component 304 will be designed to be located outside the chip shadow.

[0064] The conductive material 304 in hole TH1 can have a solid pillar shape. The conductive material 304 can also be referred to as a conductive solid pillar 304. Therefore, there is no non-conductive material 205 in hole TH1. The two terminals 304T1 and 304T2 of the conductive material 304 in hole TH1 can be close to the top surface 202T and bottom surface 202B of the core 202, respectively. Furthermore, the two terminals of the conductive material 304 in hole TH1 can be exposed from the top surface 202T and bottom surface 202B of the core 202, respectively.

[0065] In some embodiments, the terminals 304T1 of the conductive material 304 in via TH1 and the terminals 206T1 of the conductive material 206 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-1. For example, the terminals 304T1 of the conductive material 304 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-1 (which is also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the top surface 202T of the core 202. The terminals 206T1 of the conductive material 206 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-1 (which is also the top surface 220BT of the core structure 220B), which is close to the top surface 220BT of the core structure 220B.

[0066] In other words, the terminal 304T1 of the conductive material 304 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the core 202. The terminal 206T1 of the conductive material 206 in the hole TH2 is close to the outer surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the top surface 220BT), which is far from the core 202.

[0067] Similarly, terminals 304T2 of conductive material 304 in via TH1 and terminals 206T2 of conductive material 206 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminals 304T2 of conductive material 304 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the bottom surface 202B of the core 202. Terminals 206T2 of conductive material 206 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-2 (also the bottom surface 220BB of the core structure 220B), which is close to the bottom surface 220BB of the core structure 220B.

[0068] In other words, the terminal 304T2 of the conductive material 304 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the core 202. The terminal 206T1 of the conductive material 206 in the hole TH2 is close to the outer surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the bottom surface 220BB), which is far from the core 202.

[0069] In some embodiments, in direction D120, the dimension L11 of the conductive material 304 is substantially equal to the thickness of the core 202. Furthermore, the dimension L2 of the conductive material 206 is substantially equal to the total thickness of the core 202, and the core redistribution layers 210-1 and 210-2. Therefore, the dimension L11 of the conductive material 304 is smaller than the dimension L2 of the conductive material 206.

[0070] In some embodiments, conductive materials 204, 304, and 206 are made of the same or similar materials and manufactured in the same or similar processes.

[0071] like Figure 2 As shown, the conductive layer 208 can completely cover the hole TH1 and the conductive material 304 and non-conductive material 205 within the hole TH1. Furthermore, the conductive layer 208 can be connected (coupled) to the conductive material 304 on the inner wall of the hole TH1.

[0072] In some embodiments, substrate redistribution layers 230-1 and 230-2 are connected to (or coupled to) conductive material 304 in via TH1. More specifically, conductive material 304 in via TH1 may be conductive material 204 in via TH1, which may be coupled to conductive layer 208 of core redistribution layers 210-1 and 210-2.

[0073] In the substrate 200B of the semiconductor structure 500B, conductive material 304 in the hole TH1 through the core of the core structure 220A, conductive traces and vias 212 in the conductive layers 208 of the core redistribution layers 210-1 and 210-2, and conductive traces and vias 222-1 in the conductive layers 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH11 for power transmission (also known as power wiring PH11).

[0074] In some embodiments, considering the material and process characteristics of dielectric layers 210 and 230, the wiring density of conductive wiring PH11 in core redistribution layers 210-1 and 210-2 is lower than that of conductive wiring PH11 in substrate redistribution layers 230-1 and 230-2. For example, the conductive traces of conductive layer 208 in core redistribution layers 210-1 and 210-2 have a wider minimum linewidth and a larger spacing than the conductive traces of conductive layer 224-1 in conductive wiring PH11 in substrate redistribution layers 230-1 and 230-2. Furthermore, the diameter D1 of via 212 in conductive wiring PH11 in core redistribution layers 210-1 and 210-2 is larger than the diameter D2 of via 222-1 in conductive wiring PH11 in substrate redistribution layers 230-1 and 230-2. Therefore, conductive wiring PH11 has improved electrical integrity, suitable for power transmission.

[0075] In addition to the advantages of semiconductor structure 500A, the conductive material 304 in the hole TH1 of semiconductor structure 500B has lower impedance and resistance than the conductive material 204 in the hole TH1 of semiconductor structure 500B, when the hole TH1 of semiconductor structures 500A and 500B has the same dimensions. Therefore, semiconductor structure 500B may have superior power integrity and signal integrity.

[0076] Figure 3 This is a schematic cross-sectional view of a semiconductor structure 500C according to some embodiments of the present invention. The elements in the following embodiments are consistent with those previously referenced. Figure 1 and Figure 2 The same or similar elements will not be repeated to simplify the description.

[0077] like Figure 2 and Figure 3 As shown, the difference between semiconductor structure 500B and semiconductor structure 500C includes at least the use of conductive material 306 instead of non-conductive material 205-2 in the substrate 200C of semiconductor structure 500C. The conductive material 306 is formed as a conductive solid pillar filling the hole TH2 of the core structure 220B. The conductive material 306 is also referred to as through-hole conductive component 306.

[0078] The conductive material 306 in hole TH2 can have a solid pillar shape. The conductive material 306 can also be referred to as a conductive solid pillar 306. Therefore, no non-conductive material 205-2 is provided in hole TH2.

[0079] In some embodiments, the terminals 304T1 of the conductive material 304 in via TH1 and the terminals 306T1 of the conductive material 306 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-1. For example, the terminals 304T1 of the conductive material 304 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-1 (which is also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the top surface 202T of the core 202. The terminals 306T1 of the conductive material 306 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-1 (which is also the top surface 220BT of the core structure 220B), which is close to the top surface 220BT of the core structure 220B.

[0080] In other words, the terminal 304T1 of the conductive material 304 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the core 202. The terminal 306T1 of the conductive material 306 in the hole TH2 is close to the outer surface (also the top surface 220BT) of a dielectric layer 210 of the core redistribution layer 210-1, which is far from the core 202.

[0081] Similarly, terminals 304T2 of conductive material 304 in via TH1 and terminals 306T2 of conductive material 306 in via TH2 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminals 304T2 of conductive material 304 in via TH1 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the bottom surface 202B of the core 202. Terminals 306T2 of conductive material 306 in via TH2 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-2 (also the bottom surface 220BB of the core structure 220B), which is close to the bottom surface 220BB of the core structure 220B.

[0082] In other words, the terminal 304T2 of the conductive material 304 in the hole TH1 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the core 202. The terminal 306T1 of the conductive material 306 in the hole TH2 is close to the outer surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the bottom surface 220BB), which is far from the core 202.

[0083] In some embodiments, in direction D120, the dimension L11 of the conductive material 304 is approximately equal to the thickness of the core 202. Furthermore, the dimension L2C of the conductive material 306 is approximately equal to the total thickness of the core 202 and the core redistribution layers 210-1 and 210-2. Therefore, the dimension L11 of the conductive material 304 is smaller than the dimension L2C of the conductive material 306.

[0084] In some embodiments, conductive materials 204, 304, and 306 are made of the same or similar materials and manufactured in the same or similar processes.

[0085] Figure 4 This is a schematic cross-sectional view of a semiconductor structure 500D according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 3 The same or similar elements in the description will not be repeated, and the focus will be on brevity.

[0086] like Figure 3 and Figure 4 As shown, the difference between semiconductor structure 500C and semiconductor structure 500D includes at least the following: semiconductor structure 500D includes at least the core structure 220D of substrate 200D of semiconductor structure 500D, and the hole TH2 is formed through the inner dielectric layer 210 (i.e., a portion of core redistribution layers 210-1 and 210-2) of core redistribution layers 210-1 and 210-2.

[0087] In some embodiments, the depth P2D of hole TH2 is approximately equal to the total thickness of core 202 and inner core redistribution layers 210-1 and 210-2. The depth P1 of hole TH1 is less than the depth P2 of hole TH2.

[0088] In some embodiments, the substrate 200D of the semiconductor structure 500D includes a conductive material 406, which is formed as a conductive solid pillar filling a hole TH2. The conductive material 406 is also referred to as a through-hole conductive component 406.

[0089] The conductive material 406 in hole TH2 can have a solid pillar shape. Conductive material 406 can also be referred to as conductive solid pillar 306. Therefore, no non-conductive material 205-2 is provided in hole TH2.

[0090] Furthermore, the size L2D of the conductive material 306 is approximately equal to the total thickness of the core 202 and the inner core redistribution layers 210-1 and 210-2.

[0091] The semiconductor structure 500D further includes vias 212 disposed in the outer dielectric layer 210 of the core redistribution layers 210-1 and 210-2, directly above and below the terminals 406T1 and 406T2 of the conductive material 406. The vias 212 are coupled between the conductive material 406 and the conductive layer 224-2.

[0092] Figure 5 This is a schematic cross-sectional view of a semiconductor structure 500E according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figure 1 The same or similar elements in the description will not be repeated, and the focus will be on brevity.

[0093] like Figure 1 and Figure 5As shown, the difference between semiconductor structure 500A and semiconductor structure 500E includes at least one integrated passive device (IPD) 270 embedded in the core 202 of core structure 220C, in the substrate 200E of semiconductor structure 500E. Furthermore, the integrated passive device 270 can be coupled to vias 212-3 and conductive layer 208-3 of core redistribution layer 210-1, and vias 222-3 and conductive layer 224-3 of substrate redistribution layer 230-1.

[0094] like Figure 5 As shown, the integrated passive device 270 is embedded in the core 202 of the core structure 220C of the substrate 200E. For example, the integrated passive device 270 is disposed in a cavity (not shown) of the core 202. Furthermore, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 202T or the bottom surface 202B of the core 202. In this embodiment, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 202T of the core 202. Additionally, the dielectric layer 210 can fill the remaining space between the integrated passive device 270 and the core 202 (e.g., the sidewall of the cavity) to achieve isolation between the integrated passive device 270 and the core 202.

[0095] In some embodiments, the integrated passive device 270 is coupled to vias and conductive layers of the core redistribution layer 210-1 (or core redistribution layer 210-2) and the substrate redistribution layer 230-1 (or substrate redistribution layer 230-2), facing (approaching) the pads of the conductive layer 270. For example, when the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 202T of the core 202, the pads of the conductive layer 270 are coupled to vias 212-3 and conductive layers 208-3 disposed in the dielectric layer 210 of the core redistribution layer 210-1, and vias 222-3 and conductive layers 224-3 disposed in the dielectric layer 230 of the substrate redistribution layer 230-1. Vias 212-3 and conductive layer 208-3 of the core redistribution layer 210-1, and vias 222-3 and conductive layer 224-3 of the substrate redistribution layer 230-1 are disposed on (and close to) the top surface 202T of the core 202. In this embodiment, via 212-3 can pass through the two dielectric layers 210 of the core redistribution layer 210-1. Vias 212 can pass through the dielectric layers 210 of the core redistribution layers 210-1 and 210-2.

[0096] Alternatively, when the pads (not shown) of the integrated passive device 270 are exposed from the bottom surface 202B of the core 202, the pads of the conductive layer 270 are coupled to vias (not shown) and conductive layers (not shown) provided in the dielectric layer 210 of the core redistribution layer 210-2, and vias (not shown) and conductive layers (not shown) provided in the dielectric layer 230 of the substrate redistribution layer 230-2. The vias and conductive layers of the core redistribution layer 210-2 and the substrate redistribution layer 230-2 are provided on (and close to) the bottom surface 202B of the core 202.

[0097] In this embodiment, the conductive traces and vias 212-3 of the conductive layer 208-3 of the core redistribution layer 210-1, and the conductive traces and vias 222-3 of the conductive layer 224-3 of the substrate redistribution layer 230-1, can form a conductive wiring PH3 (also known as a power wiring PH3) coupled to conductive wiring PH1 or conductive wiring PH2.

[0098] In some embodiments, the integrated passive device 270 includes resistors, inductors, capacitors (e.g., deep trench capacitors (DTC)) or combinations thereof.

[0099] Figure 6 This is a schematic cross-sectional view of a semiconductor structure 500F according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 5 The same or similar elements will not be repeated to simplify the description.

[0100] like Figure 5 and Figure 6 As shown, the difference between semiconductor structure 500E and semiconductor structure 500F includes at least the use of conductive material 306 instead of non-conductive material 205-2 in the substrate 200F of semiconductor structure 500F. The conductive material 306 forms a conductive solid pillar filling the hole TH2 in the core structure 220F. The conductive material 306 is also referred to as the through-hole conductive component 306.

[0101] The conductive material 306 in hole TH2 can have a solid pillar shape. The conductive material 306 can also be referred to as a conductive solid pillar 306. Therefore, no non-conductive material 205-2 is provided in hole TH2.

[0102] In this embodiment, the position of the conductive material 306 of the semiconductor structure 500F and the electrical connections between the conductive material 306, the core redistribution layers 210-1, 201-2 and the substrate redistribution layers 230-1, 230-2 can be referenced from the conductive material 306 of the semiconductor structure 500C, and will not be repeated here for the sake of simplification.

[0103] Figure 7 This is a schematic cross-sectional view of a semiconductor structure 500G according to some embodiments of the present invention. The elements in the following embodiments are the same as those in the previous references. Figures 1 to 6 The same or similar elements will not be repeated to simplify the description.

[0104] like Figure 6 and Figure 7 As shown, the difference between semiconductor structure 500F and semiconductor structure 500G includes at least the fact that the hole TH2 of the core structure 220G of the substrate 200G of semiconductor structure 500G is formed through the inner dielectric layer 210 of the core redistribution layers 210-1 and 210-2 (i.e., portions of the core redistribution layers 210-1 and 210-2).

[0105] In some embodiments, the depth P2D of hole TH2 is approximately equal to the total thickness of core 202 and inner core redistribution layers 210-1 and 210-2. The depth P1 of hole TH1 is less than the depth P2 of hole TH2.

[0106] In some embodiments, the substrate 200G of the semiconductor structure 500G includes a conductive material 406 forming conductive solid pillars filled in the via TH2. The conductive material 406 is also referred to as the through-hole conductive component 406.

[0107] The conductive material 406 may have a solid cylindrical shape in the hole TH2. The conductive material 406 can also be referred to as a conductive solid pillar 306. Therefore, no non-conductive material 205-2 is provided in the hole TH2.

[0108] In this embodiment, the position of the conductive material 406 of the semiconductor structure 500G and the electrical connections between the conductive material 306, the core redistribution layers 210-1, 201-2 and the substrate redistribution layers 230-1, 230-2 can be referenced from the conductive material 306 of the semiconductor structure 500D, and will not be repeated for the sake of simplicity.

[0109] Figure 8 This is a schematic cross-sectional view of a semiconductor structure 500H according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 7 Elements that are identical or similar in description will not be repeated for the sake of brevity.

[0110] like Figure 5 and Figure 8 As shown, the difference between semiconductor structure 500F and semiconductor structure 500H includes at least the use of conductive material 304 instead of non-conductive material 205-1 in the substrate 200H of semiconductor structure 500H. The conductive material 304 is formed as a conductive solid pillar filling the hole TH1 of the core structure 220H. The conductive material 304 is also referred to as through-hole conductive component 304.

[0111] In this embodiment, the position of the conductive material 304 of the semiconductor structure 500H and the electrical connections between the conductive material 306, the core redistribution layers 210-1, 201-2 and the substrate redistribution layers 230-1, 230-2 can be referenced from the conductive material 304 of the semiconductor structure 500B, and will not be repeated for the sake of simplicity.

[0112] Figure 9 This is a schematic cross-sectional view of a semiconductor structure 500I according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 8 Elements that are identical or similar in description will not be repeated for the sake of brevity.

[0113] like Figure 8 and Figure 9 As shown, the difference between semiconductor structure 500H and semiconductor structure 500I includes at least the use of conductive material 306 instead of non-conductive material 205-2 in the substrate 200I of semiconductor structure 500I. The conductive material 306 is formed as a conductive solid pillar filling the hole TH2 of the core structure 220I. The conductive material 306 is also referred to as a through-hole conductive component 306.

[0114] The conductive material 306 may have a solid cylindrical shape in the hole TH2. The conductive material 306 can also be referred to as a conductive solid pillar 306. Therefore, no non-conductive material 205-2 is placed in the hole TH2.

[0115] In this embodiment, the position of the conductive material 306 of the semiconductor structure 500I and the electrical connection between the conductive material 306, the core redistribution layers 210-1, 201-2 and the substrate redistribution layers 230-1, 230-2 can be referenced from the conductive material 306 of the semiconductor structure 500C, and will not be repeated for the sake of simplicity.

[0116] Figure 10 This is a schematic cross-sectional view of a semiconductor structure 500J according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 9 Elements that are identical or similar in description will not be repeated for the sake of brevity.

[0117] like Figure 9 and Figure 10 As shown, the difference between semiconductor structure 500I and semiconductor structure 500J includes at least the fact that the hole TH2 of the core structure 220J of the substrate 200J of semiconductor structure 500J is formed through the inner dielectric layer (i.e., a portion of the core redistribution layers 210-1 and 210-2) of the core redistribution layers 210-1 and 210-2.

[0118] In some embodiments, the depth P2D of hole TH2 is approximately equal to the total thickness of core 202 and inner core redistribution layers 210-1 and 210-2. The depth P1 of hole TH1 is less than the depth P2 of hole TH2.

[0119] In some embodiments, the substrate 200J of the semiconductor structure 500J includes a conductive material 406 formed as a conductive solid pillar filling a hole TH2. The conductive material 406 is also referred to as a through-hole conductive component 406.

[0120] The conductive material 406 may have a solid cylindrical shape in the hole TH2. The conductive material 406 can also be referred to as a conductive solid pillar 306. Therefore, no non-conductive material 205-2 is provided in the hole TH2.

[0121] In this embodiment, the position of the conductive material 406 of the semiconductor structure 500J and the electrical connections between the conductive material 306, the core redistribution layers 210-1, 201-2 and the substrate redistribution layers 230-1, 230-2 can be referenced from the conductive material 306 of the semiconductor structure 500D, and will not be repeated for the sake of simplicity.

[0122] In addition to the advantages of semiconductor structures 500A to 500D, semiconductor structures 500E to 500J, which include an integrated passive device 270 embedded in the core 202, further have the advantages of small area and / or size, simplified semiconductor bonding technology (SBT) manufacturing process, increased functionality, improved electrical performance and reliability.

[0123] In some embodiments, such as Figures 11 to 15 As shown, the core structure of the semiconductor substrate is a multi-core structure, comprising at least two cores stacked on top of each other and separated from each other by one or more dielectric layers formed of prepreg (PP).

[0124] Figure 11 This is a schematic cross-sectional view of a semiconductor structure 500K according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figures 1 to 10 Elements that are identical or similar in description will not be repeated for the sake of brevity.

[0125] like Figure 1 and Figure 11 As shown, the difference between semiconductor structure 500A and semiconductor structure 500K includes at least the following: the core structure 220K of the substrate 200K of semiconductor structure 500K includes two cores 202 and 302, core redistribution layers 210-1 and 210-2, and an additional dielectric layer 210 between the core redistribution layers 210-1 and 210-2. Substrate 200K can also be referred to as a multilayer dual-core substrate.

[0126] like Figure 11As shown, core 302 is disposed on core 202. In this embodiment, an additional dielectric layer 210 is disposed on the top surface 202T of core 202, and located between the top surface 202T of core 202 and the bottom surface 302B of core 302. Furthermore, each dielectric layer 210 of the core redistribution layer 210-1 is disposed on the top surface 302T of core 302, and opposite to the additional dielectric layer 210. It should be noted that no vias and / or conductive traces (not shown) are provided in the additional dielectric layer 210.

[0127] In the core structure 220K, the thickness T12 of the core 202 can be the same as, greater than, or less than the thickness T22 of the core 302. In this embodiment, the total thickness (i.e., T12 + T22) of the cores 202 and 302 of the core structure 220K can be determined according to the design and the core structure 220K. Figure 1 The thickness T1 of the core 202 is the same, greater, or less than that of the core 302. In some embodiments, the cores 202 and 302 may be made of the same or similar materials.

[0128] like Figure 11 As shown, separate vias TH12 and TH22 are embedded in the core structure 220K of substrate 200K. In this embodiment, via TH12 passes through cores 202 and 302 and the additional dielectric layer 210 between cores 202 and 302. Furthermore, via TH22 passes through the core structure 220K containing cores 202 and 302 and all dielectric layers 210. In some embodiments, in direction D120, the depth P12 of via TH12 is approximately equal to the total thickness of cores 202 and 302 and the additional dielectric layer 210 between cores 202 and 302. Furthermore, the depth P22 of via TH22 is approximately equal to the total thickness of cores 202 and 302, the additional dielectric layer 210 between cores 202 and 302, and the core redistribution layers 210-1 and 210-2. Therefore, the depth of via TH12 is less than the depth of via TH22.

[0129] In other words, the core structure 220K of the substrate 200K includes at least two cores 202, 302 and at least three dielectric layers 210 stacked on top of each other. Furthermore, the two cores 202, 302 are arranged alternately with the three dielectric layers 210. In some embodiments, the core structure 220K has a via TH12 passing through one of the two cores 202, 302 and the three dielectric layers 210. Additionally, the core structure 220K has a via TH22 passing through the two cores 202, 302 and the three dielectric layers 210.

[0130] Conductive material 404 is disposed in hole TH12, and conductive material 506 is disposed in hole TH22. In some embodiments, such as Figure 11As shown, conductive materials 404 and 506 can have a hollow cylindrical shape. For example, conductive materials 404 and 506 can also be referred to as through-hole conductive components (e.g., plated through-hole (PTHs) 404 and 506).

[0131] In this embodiment, the two terminals 404T1 and 404T2 of the conductive material 404 in hole TH12 are not aligned with the two corresponding terminals 506T1 and 506T2 of the conductive material 506 in hole TH22 in direction D100. For example, the two terminals 404T1 and 404T2 of the conductive material 404 in hole TH12 may be close to the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively. Furthermore, the two terminals 404T1 and 404T2 of the conductive material 404 in hole TH12 may be exposed from the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively. In some embodiments, the two terminals 506T1 and 506T2 of the conductive material 506 in hole TH22 may be close to the top surface 220KT and the bottom surface 220KB of core structure 220K, respectively. In addition, the two terminals 506T1 and 506T2 of the conductive material 506 in the hole TH22 can be exposed from the top surface 220KT and the bottom surface 220KB of the core structure 220K, respectively.

[0132] In some embodiments, the terminals 404T1 of the conductive material 404 in via TH12 and the terminals 506T1 of the conductive material 506 in via TH22 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-1. For example, the terminals 404T1 of the conductive material 404 in via TH12 are close to a surface of the inner dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the top surface 302T of the core 302. The terminals 506T1 of the conductive material 506 in via TH22 are close to a surface of the dielectric layer 210 of the core redistribution layer 210-1 (also the top surface 220KT), which is close to the top surface 220KT of the core structure 220K.

[0133] In other words, the terminal 404T1 of the conductive material 404 in the hole TH12 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the core 302. The terminal 506T1 of the conductive material 506 in the hole TH22 is close to the outer surface (also the top surface 220KT) of a dielectric layer 210 of the core redistribution layer 210-1, which is far from the core 302.

[0134] Similarly, terminals 404T2 of conductive material 404 in via TH12 and terminals 506T2 of conductive material 506 in via TH22 are close to the opposite surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminal 404T2 of conductive material 404 in via TH12 is close to a surface of the inner dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the bottom surface 202B of the core 202. Terminal 506T2 of conductive material 506 in via TH22 is close to a surface of the dielectric layer 210 of the core redistribution layer 210-2 (also the bottom surface 220KB), which is close to the bottom surface 220KB of the core structure 220K.

[0135] In other words, in hole TH12, the terminal 404T2 of conductive material 404 is close to the inner surface of one of the dielectric layers 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the core 202. In hole TH22, the terminal 506T1 of conductive material 506 is close to the outer surface (also the bottom surface 220KB) of one of the dielectric layers 210 of the core redistribution layer 210-1, which is far from the core 202.

[0136] In some embodiments, in direction D120, the dimension L12 of the conductive material 404 is substantially equal to the total thickness of the cores 202, 302, and the additional dielectric layer 210 between the cores 202 and 302. Furthermore, the dimension L22 of the conductive material 506 is substantially equal to the total thickness of the cores 202, 302, the additional dielectric layer 210 between the cores 202 and 302, and the core redistribution layers 210-1 and 210-2. Therefore, the dimension L12 of the conductive material 404 is smaller than the dimension L22 of the conductive material 506.

[0137] In some embodiments, the conductive materials 204, 206, 404, and 506 are made of the same or similar materials and manufactured in the same or similar processes.

[0138] like Figure 11 As shown, the semiconductor structure 500K further includes a non-conductive material 505 (comprising non-conductive material portions 505-1, 505-2) filling the remaining space of vias TH12 and TH22, and is surrounded by conductive materials 404 and 506. For example, non-conductive material portion 505-1 may fill via TH12 and be surrounded by conductive material 404. Furthermore, non-conductive material portion 505-2 may fill via TH22 and be surrounded by conductive material portion 506. In some embodiments, the non-conductive materials 205 and 505 may have the same or similar materials and processes.

[0139] In other words, at least two dielectric layers 230 of the semiconductor structure 500K are disposed on the top surface 220KT and the bottom surface 220KB of the core structure 220K, and are connected to the top dielectric layer 210 and the bottom dielectric layer 210. The three first dielectric layers 210 and the two dielectric layers 230 are made of different materials.

[0140] In this embodiment, the electrical connections between conductive material 404, core redistribution layers 210-1, 210-2, and substrate redistribution layers 230-1, 230-2 can be referenced to the electrical connections between conductive material 204, core redistribution layers 210-1, 210-2, and substrate redistribution layers 230-1, 230-2 in semiconductor structure 500A, and will not be repeated for the sake of simplicity. Similarly, in this embodiment, the electrical connections between conductive material 506 and substrate redistribution layers 230-1, 230-2 can be referenced to the electrical connections between conductive material 206 and substrate redistribution layers 230-1, 230-2 in semiconductor structure 500A, and will not be repeated for the sake of simplicity.

[0141] In some embodiments, the substrate 200K of the semiconductor structure 500K provides various types of conductive lines for power transmission and signal transmission. In some embodiments, conductive traces and vias 212 in the conductive material 404 in the hole TH12 through the core of the core structure 220K, conductive traces and vias 222-1 in the conductive layer 208 of the core redistribution layers 210-1 and 210-2, and conductive traces and vias 222-1 in the conductive layer 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH12 for power transmission (also referred to as power wiring PH12). For example, power wiring PH12 may include a positive power supply voltage VDD, a ground power supply voltage VSS, an overdrive voltage signal (e.g., a signal greater than VDD), a negative power supply voltage signal, and other power supply voltage signals. In some embodiments, the wiring density of conductive wiring PH12 in the core redistribution layers 210-1 and 210-2 is lower than the wiring density of conductive wiring PH12 in the substrate redistribution layers 230-1 and 230-2, depending on the material and process characteristics of the dielectric layers 210 and 230. For example, the conductive traces of the conductive layer 208 in the core redistribution layers 210-1 and 210-2 have a wider minimum linewidth and a larger spacing than the conductive traces of the conductive wiring PH12 in the substrate redistribution layers 230-1 and 230-2. Furthermore, the diameter D1 of the via 212 of the conductive wiring PH12 in the core redistribution layers 210-1 and 210-2 is larger than the diameter D2 of the via 222-1 of the conductive wiring PH12 in the substrate redistribution layers 230-1 and 230-2. Therefore, the conductive wiring PH12 improves power integrity and is suitable for power transmission.

[0142] Furthermore, the conductive material 506 passing through the hole TH22 of the core structure 220K, as well as the conductive traces and vias 222-2 of the conductive layers 224-2 of the substrate redistribution layers 230-1 and 230-2, can form conductive wiring PH22 (also known as signal wiring PH22) for signal transmission. Since the conductive material 506 is formed in the hole TH22 throughout the dielectric layer 210 passing through the core 202 and the core redistribution layers 210-1 and 210-2, the conductive wiring PH22 can reduce the interface between the vias of the redistribution layers and the connecting conductive traces (for example, the conductive wiring PH22 can be formed without the conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2). Therefore, the conductive wiring PH22 improves signal integrity and is suitable for signal transmission.

[0143] The core structure 220K is a composite structure consisting of cores 202 and 302 and a dielectric layer 210 disposed on the opposing surfaces of cores 202 and 302. Furthermore, the dielectric layer 210 is made of prepreg (PP). This improves the mechanical strength of the substrate 200K. Additionally, conductive material 404, which passes only through cores 202 and 302, and conductive material 506, which passes through the core structure 220K, can form conductive wiring PH12 and PH22 suitable for power and signal transmission. Therefore, the semiconductor structure 500K can achieve a balance between power integrity and signal integrity.

[0144] Figure 12 This is a schematic cross-sectional view of a semiconductor structure 500L according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figure 1 , Figure 5 and Figure 11 For the sake of brevity, identical or similar components will not be repeated.

[0145] like Figure 5 and Figure 6 As shown, the differences between semiconductor structure 500E and semiconductor structure 500L include at least the following: the substrate 200L of semiconductor structure 500L further includes an integrated passive device (IPD) 270 embedded in the core 302 of core structure 220L. Furthermore, the core redistribution layer 210-1 may further include vias 212-3 and conductive layers 208-3, and the substrate redistribution layer 230-1 may further include vias (not shown) and conductive layers 224-3 for coupling to the integrated passive device 270. Additionally, conductive material (via conductive components) 504 of substrate 200L is disposed in holes TH13 passing through the cores 202 and 302 and the opposing surfaces of the three dielectric layers 210 of cores 202 and 302.

[0146] like Figure 12 As shown, the core structure 220L of the substrate 200L further includes a hole TH13 passing through cores 202 and 302, an additional dielectric layer 210 between cores 202 and 302, and the innermost dielectric layer 210 of core redistribution layers 210-1 and 210-2. In some embodiments, in direction D120, the depth P13 of hole TH13 is approximately equal to the total thickness of cores 202 and 302, the total thickness of the additional dielectric layer 210 between cores 202 and 302, and the innermost dielectric layer 210 of core redistribution layers 210-1 and 210-2. The depth of hole TH13 is less than the depth of hole TH22.

[0147] In other words, the core structure 220L of the substrate 200L includes at least two cores 202 and 302 and at least five stacked dielectric layers 210. Furthermore, the cores 202 and 302 are arranged in an alternating manner with three of the five dielectric layers 210. Additionally, the remaining two dielectric layers 210 are positioned as the top and bottom layers of the core structure 220L. In some embodiments, the core structure 220L has vias TH13 passing through the cores 202 and 302 and the three intermediate dielectric layers 210. Furthermore, the core structure 220L has vias TH22 passing through the cores 202 and 302 and the five dielectric layers 210.

[0148] Conductive material (through-hole conductive component) 504 is disposed in the hole TH13, and non-conductive material 505-1 fills the remaining space of the hole TH13. In some embodiments, such as Figure 12 As shown, the conductive material 504 in the hole TH13 can be hollow cylindrical. For example, the conductive material 504 can also be called a plated through hole (PTH) 504.

[0149] In this embodiment, the two terminals 504T1 and 504T2 of the conductive material 504 in hole TH13 are not aligned with the two corresponding terminals 506T1 and 506T2 of the conductive material 506 in hole TH22 in direction D100. For example, the two terminals 504T1 and 504T2 of the conductive material 504 in hole TH13 can be close to and exposed to the outer surface of the innermost dielectric layer 210 of the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively.

[0150] In some embodiments, the terminals 504T1 of the conductive material 504 in hole TH13 and the terminals 506T1 of the conductive material 506 in hole TH22 are close to the opposite surfaces of the outermost dielectric layer 210 of the core redistribution layer 210-1.

[0151] In other words, the terminal 504T1 of the conductive material 504 in the hole TH13 is close to the inner surface of the outermost dielectric layer 210 of the core redistribution layer 210-1 near the core 302. The terminal 506T1 of the conductive material 506 in the hole TH22 is close to the outer surface (also the top surface 220LT) of the outermost dielectric layer 210 away from the core 302.

[0152] Similarly, terminals 504T2 of conductive material 504 in via TH13 and terminals 506T2 of conductive material 506 in via TH22 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminals 504T2 of conductive material 504 in via TH13 are close to the surface of the outermost dielectric layer 210 of the core redistribution layer 210 near the bottom surface 202B of the core 202. Terminals 506T2 of conductive material 506 in via TH22 are close to the surface of the outermost dielectric layer 210 (also the bottom surface 220LB) of the bottom surface 220LB of the core structure 220L.

[0153] In other words, the terminal 504T2 of the conductive material 504 in hole TH13 is close to the inner surface of the outermost dielectric layer 210 of the core redistribution layer 210-2 near the core 202. The terminal 506T1 of the conductive material 506 in hole TH22 is close to the outer surface (also the bottom surface 220LB) of the outermost dielectric layer 210 away from the core 202.

[0154] In some embodiments, in direction D120, the dimension L13 of the conductive material 504 is approximately equal to the total thickness of the cores 202 and 302 and the total thickness of the additional dielectric layer 210 on the opposing surfaces of the cores 202 and 302. The dimension L13 of the conductive material 504 is smaller than the dimension L22 of the conductive material 506.

[0155] In some embodiments, conductive materials 204, 206, 404, 506, and 504 may have the same or similar materials and processes. In some embodiments, non-conductive materials 205, 405, and 505-1 may have the same or similar materials and processes.

[0156] In some embodiments, the substrate 200L of the semiconductor structure 500L provides various types of conductive lines for power transmission and signal transmission. In some embodiments, the conductive material 504 in the via TH13, the conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2, and the conductive traces and vias 222-1 of the conductive layers 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH13 for power transmission (also referred to as power wiring PH13). In some embodiments, the wiring density of the conductive wiring PH13 in the core redistribution layers 210-1 and 210-2 is lower than that of the conductive wiring PH13 in the substrate redistribution layers 230-1 and 230-2, depending on the material and process characteristics of the dielectric layers 210 and 230. Therefore, the conductive wiring PH13 has improved power integrity and is suitable for power transmission.

[0157] Since the core structure 220L is a composite structure consisting of cores 202 and 302 and dielectric layers 210 disposed on the opposing surfaces of cores 202 and 302, and is made of prepreg (PP), the mechanical strength of the substrate 200L is improved. Furthermore, the conductive material 504 passing through cores 202 and 302 and the three intermediate dielectric layers 210, as well as the conductive material 506 passing through the core structure 220L, can form conductive wiring PH13 and PH22 suitable for power transmission and signal transmission. Therefore, the semiconductor structure 500L can achieve a balance between power integrity and signal integrity.

[0158] In some embodiments, the integrated passive device 270 of the semiconductor structure 500L is embedded in the core of the core structure 220L, near the top surface 220LT or bottom surface 220BT. For example... Figure 12 As shown, the integrated passive device 270 is embedded in the core 302 of the core structure 220L of the substrate 200L. The core 302 is located near the top surface 220LT of the core structure 220L. For example, the integrated passive device 270 is disposed in a cavity (not shown) of the core 302. Furthermore, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302. In this embodiment, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302. In addition, the dielectric layer 210 can fill the remaining space of the sidewalls (not shown) between the integrated passive device 270 and the core 302 (e.g., the sidewalls of the cavity) to achieve isolation between the integrated passive device 270 and the core 302.

[0159] Alternatively, the integrated passive device 270 can be embedded in the core 202 of the core structure 220L of the substrate 200L. The core 202 is located near the bottom surface 220LB of the core structure 220L. For example, the integrated passive device 270 is disposed in a cavity (not shown) of the core 202. Furthermore, the pads (not shown) of the integrated passive device 270 can be exposed from the bottom surface 202B of the core 202. In this embodiment, the pads (not shown) of the integrated passive device 270 can be exposed from the bottom surface 202B of the core 202. In addition, the dielectric layer 210 can fill the remaining space of the sidewalls (not shown) between the integrated passive device 270 and the core 202 (e.g., the sidewalls of the cavity) to achieve isolation between the integrated passive device 270 and the core 202.

[0160] In some embodiments, the integrated passive device 270 is coupled (close to) the pads of the conductive layer 270 to the vias and conductive layers of the core redistribution layer 210-1 (or core redistribution layer 210-2) and the substrate redistribution layer 230-1 (or substrate redistribution layer 230-2). For example, when the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302, the pads of the conductive layer 270 are coupled to the vias 212-3 and conductive layer 208-3 disposed in the dielectric layer 210 of the core redistribution layer 210-1, and to the vias (not shown) and conductive layer 224-3 disposed in the dielectric layer 230 of the substrate redistribution layer 230-1. The via 212-3 and conductive layer 208-3 of the core redistribution layer 210-1, and the via (not shown) and conductive layer 224-3 of the substrate redistribution layer 230-1 are disposed on (and close to) the top surface 302T of the core 302. In this embodiment, 212-3 can pass through the two dielectric layers 210 of the core redistribution layer 210-1.

[0161] Alternatively, when the pads (not shown) of the integrated passive device 270 are exposed from the bottom surface 202B of the core 202, the pads of the conductive layer 270 are coupled to vias (not shown) and conductive layers 224-3 disposed in the dielectric layer 210 of the core redistribution layer 210-2, and to vias (not shown) and conductive layers 224-3 disposed in the dielectric layer 230 of the substrate redistribution layer 230-2. The vias and conductive layers of the core redistribution layer 210-2 and the substrate redistribution layer 230-2 are disposed on (and close to) the bottom surface 202B of the core 202.

[0162] In this embodiment, the conductive traces and vias 212-3 of the conductive layer 208-3 of the core redistribution layer 210-1, and the conductive traces and vias (not shown) of the conductive layer 224-3 of the substrate redistribution layer 230-1 can form a conductive wiring PH32 (also known as a power wiring PH32) coupled to the conductive wiring PH13 or the conductive wiring PH22.

[0163] Figure 13 This is a schematic cross-sectional view of a semiconductor structure 500M according to some embodiments of the present invention. The elements in the following embodiments are the same as those in the previous references. Figure 1 , Figure 5 , Figure 11 and Figure 12 Descriptions that are identical or similar will not be repeated for the sake of brevity.

[0164] like Figure 12 and Figure 13 As shown, the difference between semiconductor structure 500F and semiconductor structure 500M includes at least the following: the core structure 220M of the substrate 200M of semiconductor structure 500M further includes an integrated passive device (IPD) 270-1 embedded in core 302 and an integrated passive device (IPD) 270-2 embedded in core 202. Furthermore, the core redistribution layer 210-1 may further include vias 212-3 and conductive layers 208-3, and the substrate redistribution layer 230-1 may further include vias (not shown) and conductive layers 224-3 for coupling to the integrated passive device 270-1. Additionally, the core redistribution layer 210-2 may further include vias 212-4 and conductive layers 208-4, and the substrate redistribution layer 230-2 may further include vias (not shown) and conductive layers 224-4 for coupling to the integrated passive device 270-2.

[0165] In some embodiments, integrated passive devices 270-1 and 270-2 of the semiconductor structure 500M are embedded in cores 202 and 302 near the top surface 220FT and bottom surface 220BT of the core structure 220F. Integrated passive devices 270-1 and 270-2 are separated from each other. Figure 13 As shown, an integrated passive device 270-1 is embedded in the core 302 of the core structure 220M of the substrate 200M. The core 302 is close to the top surface 220MT of the core structure 220M. For example, the integrated passive device 270-1 is disposed in a cavity (not shown) of the core 302. Furthermore, the pads (not shown) of the integrated passive device 270-1 may be exposed from the top surface 302T of the core 302. In this embodiment, the pads (not shown) of the integrated passive device 270-1 may be exposed from the top surface 302T of the core 302. Additionally, the dielectric layer 210 may fill the remaining space between the sidewalls (not shown) of the integrated passive device 270-1 and the core 302 (e.g., the sidewalls of the cavity) to achieve isolation between the integrated passive device 270-1 and the core 302.

[0166] like Figure 13As shown, the integrated passive device 270-2 may be embedded in the core 202 of the core structure 220M of the substrate 200M. The core 202 is close to the bottom surface 220MB of the core structure 220M. For example, the integrated passive device 270-2 is disposed in a cavity (not shown) of the core 202. Furthermore, the pads (not shown) of the integrated passive device 270-2 may be exposed from the bottom surface 202B of the core 202. In this embodiment, the pads (not shown) of the integrated passive device 270-2 may be exposed from the bottom surface 202B of the core 202. In addition, the dielectric layer 210 may fill the remaining space between the sidewalls (not shown) of the integrated passive device 270-2 and the core 202 (e.g., the sidewalls of the cavity) to achieve isolation between the integrated passive device 270-2 and the core 202.

[0167] In some embodiments, integrated passive devices 270-1 and 270-2 are coupled to vias and conductive layers of core redistribution layers 210-1, 210-2 and substrate redistribution layers 230-1, 230-2, facing (or near) pads of conductive layers 270-1 and 270-2. For example... Figure 13 As shown, the pads (not shown) of conductive layer 270-1 are coupled to vias 212-3 and conductive layer 208-3 in the dielectric layer 210 of core redistribution layer 210-1, and vias (not shown) and conductive layer 224-3 in the dielectric layer 230 of substrate redistribution layer 230-1. The vias 212-3 and conductive layer 208-3 of core redistribution layer 210-1, and the vias (not shown) and conductive layer 224-3 of substrate redistribution layer 230-1 are disposed on (and close to) the top surface 302T of core 302.

[0168] like Figure 13 As shown, the pads (not shown) of conductive layer 270-2 are coupled to vias 212-4 and conductive layer 208-4 in the dielectric layer 210 of core redistribution layer 210-2, and vias (not shown) and conductive layer 224-4 in the dielectric layer 230 of substrate redistribution layer 230-2. The vias and conductive layers of core redistribution layer 210-2 and substrate redistribution layer 230-2 are disposed on (and close to) the bottom surface 202B of core 202.

[0169] In this embodiment, the conductive traces of the conductive layer 208-3 and via 212-3 of the core redistribution layer 210-1, and the conductive traces of the conductive layer 224-3 and via (not shown) of the substrate redistribution layer 230-1 may form conductive wiring PH32 (also referred to as power wiring PH32) coupled to conductive wiring PH13 or conductive wiring PH22. Furthermore, the conductive traces of the conductive layer 208-4 and via 212-4 of the core redistribution layer 210-2, and the conductive traces of the conductive layer 224-4 and via (not shown) of the substrate redistribution layer 230-2 may form conductive wiring PH42 (also referred to as power wiring PH42) coupled to conductive wiring PH13 or conductive wiring PH22.

[0170] Figure 14 This is a schematic cross-sectional view of a semiconductor structure 500P according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figure 1 and Figure 11 Descriptions that are identical or similar will not be repeated for the sake of brevity.

[0171] like Figure 11 and Figure 14 As shown, the difference between semiconductor structure 500K and semiconductor structure 500P includes at least the following: the core structure 220P of the substrate 200P of semiconductor structure 500P includes three cores 202, 302 and 402, core redistribution layers 210-1 and 210-2, and two additional dielectric layers 210 located between the core redistribution layers 210-1 and 210-2. Substrate 200P can also be referred to as a multilayer three-core (or multi-core) substrate.

[0172] like Figure 14 As shown, core 402 is disposed between cores 202 and 302 in direction D120. In this embodiment, an additional dielectric layer 210 is disposed on the top surface 202T of core 202 and located between the top surface 202T of core 202 and the bottom surface 402B of core 402. Another additional dielectric layer 210 is disposed on the top surface 402T of core 402 and located between the top surface 402T of core 402 and the bottom surface 302B of core 302.

[0173] Furthermore, the inner layer of the dielectric layer 210 of the core redistribution layer 210-1 is disposed on the top surface 402T of the core 402 and opposite to the two additional dielectric layers 210. The inner layer of the dielectric layer 210 of the core redistribution layer 210-2 is disposed on the bottom surface 202B of the core 202 and opposite to the two additional dielectric layers 210. It should be noted that no vias and / or conductive traces (not shown) are provided in the two additional dielectric layers 210.

[0174] In core structure 220E, the thickness T13 of core 202, the thickness T23 of core 302, and the thickness T33 of core 402 can have the same or different values. In this embodiment, the total thickness (i.e., T13+T23+T33) of cores 202, 302, and 402 in core structure 220P can be determined according to the design and core structure 220 ( Figure 1 The thickness T1 of the core 202 (single core) is the same, greater, or less than that of the core. In some embodiments, cores 202, 302, and 402 may be made of the same or similar materials.

[0175] like Figure 14 As shown, separate vias TH13 and TH23 are embedded in the core structure 220P of substrate 200P. In this embodiment, via TH13 passes through cores 202, 302, and 402, and the additional dielectric layer 210 between cores 202, 302, and 402. Furthermore, via TH23 passes through the core structure 220P containing cores 202, 302, and 402, and all dielectric layers 210. In some embodiments, in direction D120, the depth P14 of via TH13 is substantially equal to the total thickness of cores 202, 302, and 402, and the additional dielectric layer 210 between cores 202, 302, and 402. Furthermore, the depth P23 of via TH23 is substantially equal to the total thickness of cores 202, 302, and 402, the additional dielectric layer 210 between cores 202, 302, and 402, and the core redistribution layers 210-1 and 210-2. Therefore, the depth of via TH13 is less than the depth of via TH23.

[0176] In other words, the core structure 220P of the substrate 200P includes at least three cores 202, 302, and 402 and at least four dielectric layers 210 stacked on top of each other. Furthermore, the three cores 202, 302, and 402 are arranged alternately with the four dielectric layers 210. In some embodiments, the core structure 220P has a hole TH13 passing through two of the three cores 202, 302, and 402 and the four dielectric layers 210. Additionally, the core structure 220P has a hole TH23 passing through the three cores 202, 302, and 402 and the four dielectric layers 210.

[0177] The substrate 200P further includes a conductive material (through-hole conductive component) 604 disposed in the hole TH14 and a conductive material (through-hole conductive component) 606 disposed in the hole TH23. In some embodiments, such as Figure 14 As shown, the conductive material 604 in hole TH14 and the conductive material 606 in hole TH23 can be hollow cylindrical. For example, conductive materials 604 and 606 can also be referred to as plated through-holes (PTHs) 604 and 606.

[0178] In this embodiment, the two terminals 604T1 and 604T2 of the conductive material 604 in hole TH14 are not aligned with the two corresponding terminals 606T1 and 606T2 of the conductive material 606 in hole TH23 in direction D100. For example, the two terminals 604T1 and 604T2 of the conductive material 604 in hole TH14 may be close to the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively. Furthermore, the two terminals 604T1 and 604T2 of the conductive material 604 in hole TH14 may be exposed from the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively. In some embodiments, the two terminals 606T1 and 606T2 of the conductive material 606 in hole TH23 may be close to the top surface 220PT and the bottom surface 220PB of core structure 220P, respectively. In addition, the two terminals 606T1 and 606T2 of the conductive material 606 in the hole TH23 can be exposed from the top surface 220PT and the bottom surface 220PB of the core structure 220P, respectively.

[0179] In some embodiments, the terminals 604T1 of the conductive material 604 in via TH14 and the terminals 606T1 of the conductive material 606 in via TH23 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-1. For example, the terminal 604T1 of the conductive material 604 in via TH14 is close to a surface of the inner dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the top surface 302T of the core 302. The terminal 606T1 of the conductive material 606 in via TH23 is close to a surface of the outer dielectric layer 210 of the core redistribution layer 210-1 (also the top surface 220PT), which is close to the top surface 220PT of the core structure 220P.

[0180] In other words, the terminal 604T1 of the conductive material 604 in the hole TH14 is close to the inner surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the inner surface 210-1B of the core redistribution layer 210-1), which is close to the core 302. The terminal 606T1 of the conductive material 606 in the hole TH23 is close to the outer surface of a dielectric layer 210 of the core redistribution layer 210-1 (also the top surface 220PT), which is away from the core 302.

[0181] Similarly, terminals 604T2 of conductive material 604 in via TH14 and terminals 606T2 of conductive material 606 in via TH23 are close to the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminals 604T2 of conductive material 604 in via TH14 are close to the surface of the inner dielectric layer 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the bottom surface 202B of the core 202. Terminals 606T2 of conductive material 606 in via TH23 are close to the surface of the outer dielectric layer 210 of the core redistribution layer 210-2 (also the bottom surface 220PB of the core structure 220P), which is close to the bottom surface 220PB of the core structure 220P.

[0182] In other words, the terminal 604T2 of the conductive material 604 in hole TH14 is close to the inner surface of one of the dielectric layers 210 of the core redistribution layer 210-2 (also the inner surface 210-2B of the core redistribution layer 210-2), which is close to the core 202. The terminal 606T1 of the conductive material 606 in hole TH23 is close to the outer surface of one of the dielectric layers 210 of the core redistribution layer 210-1 (also the bottom surface 220PB), which is far from the core 202.

[0183] In some embodiments, in direction D120, the dimension L14 of the conductive material 604 is substantially equal to the total thickness of the cores 202, 302, 402 and the additional dielectric layer 210 between the cores 202, 302 and 402. Furthermore, the dimension L23 of the conductive material 606 is substantially equal to the total thickness of the cores 202, 302, 402, the additional dielectric layer 210 between the cores 202, 302 and 402, and the core redistribution layers 210-1 and 210-2. Therefore, the dimension L14 of the conductive material 604 is smaller than the dimension L23 of the conductive material 606.

[0184] In some embodiments, conductive materials 204, 206, 404, 406, 604, and 606 may have the same or similar materials and processes.

[0185] like Figure 14 As shown, the semiconductor structure 500P further includes a non-conductive material 605 (comprising non-conductive material portions 605-1 and 605-2) that fills the remaining space of vias TH14 and TH23 and is surrounded by conductive materials 604 and 606. For example, non-conductive material portion 605-1 may fill via TH14 and be surrounded by conductive material 604. Furthermore, non-conductive material portion 605-2 may fill via TH23 and be surrounded by conductive material portion 606. In some embodiments, non-conductive materials 205, 405, 505-1, and 605 may have the same or similar materials and processes.

[0186] In this embodiment, the electrical connections between the conductive material 604, the core redistribution layers 210-1 and 210-2, and the substrate redistribution layers 230-1 and 230-2 can be referenced to the electrical connections between the conductive material 204, the core redistribution layers 210-1 and 210-2, and the substrate redistribution layers 230-1 and 230-2 of the semiconductor structure 500A, and will not be repeated for the sake of simplicity. Similarly, in this embodiment, the electrical connections between the conductive material 606 and the substrate redistribution layers 230-1 and 230-2 can be referenced to the electrical connections between the conductive material 206 and the substrate redistribution layers 230-1 and 230-2 of the semiconductor structure 500A, and will not be repeated for the sake of simplicity.

[0187] In some embodiments, the substrate 200P of the semiconductor structure 500P provides various types of conductive lines for power transmission and signal transmission. In some embodiments, conductive traces and vias 212 through conductive material 604 in vias TH14 of the core structure 220P, conductive layers 208 of the core redistribution layers 210-1 and 210-2, and conductive traces and vias 222-1 of conductive layers 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH14 for power transmission (also referred to as power wiring PH14). For example, power wiring PH14 may include a positive power supply voltage VDD, a ground power supply voltage VSS, an overdrive voltage signal (e.g., a signal greater than VDD), a negative power supply voltage signal, and other power supply voltage signals. In some embodiments, the wiring density of conductive wiring PH14 in the core redistribution layers 210-1 and 210-2 is lower than the wiring density of conductive wiring PH14 in the substrate redistribution layers 230-1 and 230-2, depending on the material and process characteristics of the dielectric layers 210 and 230. For example, the conductive traces of the conductive layer 208 in the core redistribution layers 210-1 and 210-2 have a wider minimum linewidth and a larger spacing than the conductive traces of the conductive layer 224-1 in the conductive wiring PH14 in the substrate redistribution layers 230-1 and 230-2. Furthermore, the diameter D1 of the via 212 in the conductive wiring PH14 in the core redistribution layers 210-1 and 210-2 is larger than the diameter D2 of the via 222-1 in the conductive wiring PH14 in the substrate redistribution layers 230-1 and 230-2. Therefore, the conductive wiring PH14 has improved power integrity and is suitable for power transmission.

[0188] Furthermore, the conductive material 606 passing through the hole TH23 of the core structure 220P, as well as the conductive traces and vias 222-2 of the conductive layers 224-2 of the substrate redistribution layers 230-1 and 230-2, can form conductive wiring PH23 (also known as signal wiring PH23) for signal transmission. Since the conductive material 606 is formed in the hole TH23 throughout the dielectric layer 210 passing through the core 202 and the core redistribution layers 210-1 and 210-2, the conductive wiring PH23 may have fewer interfaces between the vias and the connecting conductive traces of the redistribution layers (e.g., the conductive wiring PH23 can be formed without the conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2). Therefore, the conductive wiring PH23 has improved signal integrity and is suitable for signal transmission.

[0189] Since the core structure 220P is a composite structure consisting of a core 202 and a dielectric layer 210 disposed on the opposing surfaces of cores 202, 302, and 402, and is made of prepreg (PP), the mechanical strength of the substrate 200P is improved. Furthermore, the conductive material 604 passing through cores 202, 302, and 402 and the conductive material 606 passing through the core structure 220P can form conductive paths PH14 and PH23 suitable for power transmission and signal transmission. Therefore, the semiconductor structure 500P can achieve a balance between power integrity and signal integrity.

[0190] Figure 15 This is a schematic cross-sectional view of a semiconductor structure 500Q according to some embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figure 1 , Figure 5 , Figure 11 and Figure 14 Descriptions that are identical or similar will not be repeated for the sake of brevity.

[0191] like Figure 14 and Figure 15 As shown, the difference between semiconductor structure 500H and semiconductor structure 500Q includes at least the following: the substrate 200Q of semiconductor structure 500Q further includes an integrated passive device (IPD) 270 embedded in the core 302 of core structure 220Q. Furthermore, the core redistribution layer 210-1 may further include vias 212-3 and conductive layers 208-3, and the substrate redistribution layer 230-1 may further include vias (not shown) and conductive layers 224-3 for coupling with the integrated passive device 270. Additionally, conductive material (via conductive components) 704 of substrate 200Q is disposed in holes TH15 through the cores 202, 302, and 402 and the three dielectric layers 210 on the opposing surfaces of cores 202, 302, and 402.

[0192] like Figure 15As shown, the core structure 220Q of substrate 200Q further includes a hole TH15 passing through cores 202, 302, and 402, an additional dielectric layer 210 between cores 202, 302, and 402, and the innermost dielectric layer 210 of core redistribution layers 210-1 and 210-2. In some embodiments, in direction D120, the depth P15 of hole TH15 is substantially equal to the total thickness of cores 202, 302, and 402, the additional dielectric layer 210 between cores 202, 302, and 402, and the innermost dielectric layer 210 of core redistribution layers 210-1 and 210-2. The depth P15 of hole TH15 is less than the depth P23 of hole TH23.

[0193] In other words, the core structure 220Q of the substrate 200Q includes at least three cores 202, 302, and 402 and at least six dielectric layers 210 stacked on top of each other. Furthermore, the three cores 202, 302, and 402 are arranged in an alternating manner with four of the six dielectric layers 210. Additionally, the remaining two dielectric layers 210 are positioned as the top and bottom layers of the core structure 220Q. In some embodiments, the core structure 220Q has vias TH15 passing through the three cores 202, 302, and 402 and the middle four of the six dielectric layers 210. Furthermore, the core structure 220Q has vias TH22 passing through the three cores 202, 302, and 402 and the six dielectric layers 210.

[0194] Conductive material 704 is disposed in the hole TH15, and non-conductive material 705-1 fills the remaining space of the hole TH15. In some embodiments, such as Figure 15 As shown, the conductive material 704 in the hole TH15 can be hollow cylindrical. For example, the conductive material 704 can also be referred to as plated through-hole (PTH) 704.

[0195] In this embodiment, the two terminals 704T1 and 704T2 of the conductive material 704 in hole TH15 are not aligned with the two corresponding terminals 606T1 and 606T2 of the conductive material 606 in hole TH23 in direction D100. For example, the two terminals 704T1 and 704T2 of the conductive material 704 in hole TH15 can be close to and exposed to the outer surface of the dielectric layer 210 of the top surface 302T of core 302 and the bottom surface 202B of core 202, respectively.

[0196] In some embodiments, the terminals 704T1 of the conductive material 704 in hole TH15 and the terminals 606T1 of the conductive material 606 in hole TH23 are close to the opposite surfaces of the outermost dielectric layer 210 of the core redistribution layer 210-1.

[0197] In other words, the terminal 704T1 of the conductive material 704 in hole TH15 is close to the inner surface of the outermost dielectric layer 210 of the core redistribution layer 210-1, near the core 302. The terminal 606T1 of the conductive material 606 in hole TH23 is close to the outer surface (also the top surface 220QT) of the outermost dielectric layer 210 of the core redistribution layer 210-1, away from the core 302.

[0198] Similarly, terminals 704T2 of conductive material 704 in hole TH15 and terminals 606T2 of conductive material 606 in hole TH23 are located near the opposing surfaces of any dielectric layer 210 of the core redistribution layer 210-2. For example, terminal 704T2 of conductive material 704 in hole TH15 is located near the surface of the outermost dielectric layer 210 of the core redistribution layer 210 near the bottom surface 202B of the core 202. Terminal 606T2 of conductive material 606 in hole TH23 is located near the surface of the outermost dielectric layer 210 (also the bottom surface 220QB) of the core structure 220Q.

[0199] In other words, the terminal 704T2 of the conductive material 704 in hole TH15 is close to the inner surface of the outermost dielectric layer 210 of the core redistribution layer 210-2, near the core 202. The terminal 606T1 of the conductive material 606 in hole TH23 is close to the outermost dielectric layer 210 of the core redistribution layer 210-1, away from the core 202 (also the bottom surface 220QB).

[0200] In some embodiments, in direction D120, the dimension L15 of the conductive material 704 is substantially equal to the total thickness of the cores 202, 302, and 402 plus the additional dielectric layer 210 on the opposing surfaces of the cores 202, 302, and 402. The dimension L15 of the conductive material 704 is smaller than the dimension L23 of the conductive material 606.

[0201] In some embodiments, conductive materials 204, 206, 404, 406, 704, 604, and 606 may have the same or similar materials and processes. In some embodiments, non-conductive materials 205, 405, 505-1, 605, and 705-1 may have the same or similar materials and processes.

[0202] In some embodiments, the integrated passive device 270 of the semiconductor structure 500Q is disposed and embedded in the core of the top surface 220QT or bottom surface 220QT near the core structure 220Q. For example... Figure 15As shown, an integrated passive device 270 is disposed and embedded in the core 302 of the core structure 220Q of the substrate 200Q. The core 302 is close to the top surface 220QT of the core structure 220Q. For example, the integrated passive device 270 is disposed in a cavity (not shown) of the core 302. Furthermore, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302. In this embodiment, the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302. In addition, the dielectric layer 210 can fill the remaining space between the sidewalls (not shown) (e.g., the sidewalls of the cavity) between the integrated passive device 270 and the core 302 to achieve isolation between the integrated passive device 270 and the core 302.

[0203] Alternatively, the integrated passive device 270 can be embedded in the core 202 of the core structure 220Q of the substrate 200Q. The core 202 is close to the bottom surface 220QB of the core structure 220Q. For example, the integrated passive device 270 is disposed in a cavity (not shown) of the core 202. Furthermore, the pads (not shown) of the integrated passive device 270 can be exposed from the bottom surface 202B of the core 202. In this embodiment, the pads (not shown) of the integrated passive device 270 can be exposed from the bottom surface 202B of the core 202. In addition, the dielectric layer 210 can fill the remaining space between the integrated passive device 270 and the core 202 (not shown) (e.g., the sidewalls of the cavity) to achieve isolation between the integrated passive device 270 and the core 202.

[0204] Since no vias and / or conductive traces (not shown) are provided in the two additional dielectric layers 210 between cores 302 and 402 and between cores 202 and 402, the integrated passive device 270 is not provided embedded in the core 402 of the core structure 220Q of the substrate 200Q.

[0205] In some embodiments, the integrated passive device 270 is coupled (close to) the pads of the conductive layer 270 to the vias and conductive layers of the core redistribution layer 210-1 (or core redistribution layer 210-2) and the substrate redistribution layer 230-1 (or substrate redistribution layer 230-2). For example, when the pads (not shown) of the integrated passive device 270 can be exposed from the top surface 302T of the core 302, the pads of the conductive layer 270 are coupled to the vias 212-3 and conductive layer 208-3 disposed in the dielectric layer 210 of the core redistribution layer 210-1, and to the vias (not shown) and conductive layer 224-3 disposed in the dielectric layer 230 of the substrate redistribution layer 230-1. The through-hole 212-3 and conductive layer 208-3 of the core redistribution layer 210-1, and the through-hole (not shown) and conductive layer 224-3 of the substrate redistribution layer 230-1 are disposed on (and close to) the top surface 302T of the core 302.

[0206] Alternatively, when the pads (not shown) of the integrated passive device 270 are exposed from the bottom surface 202B of the core 202, the pads of the conductive layer 270 are coupled to vias (not shown) and conductive layers 224-3 disposed in the dielectric layer 210 of the core redistribution layer 210-2 and to vias (not shown) and conductive layers 224-3 disposed in the dielectric layer 230 of the substrate redistribution layer 230-2. The vias and conductive layers of the core redistribution layer 210-2 and the substrate redistribution layer 230-2 are disposed on (and close to) the bottom surface 202B of the core 202.

[0207] In this embodiment, the conductive traces and vias 212-3 of the conductive layer 208-3 of the core redistribution layer 210-1, and the conductive traces and vias (not shown) of the conductive layer 224-3 of the substrate redistribution layer 230-1 can form a conductive wiring PH33 (also called power wiring PH33), coupled to conductive wiring PH15 or conductive wiring PH23.

[0208] In some embodiments, the substrate 200Q of the semiconductor structure 500Q provides various types of conductive lines for power transmission and signal transmission. In some embodiments, the conductive material 704 in the via TH15, the conductive traces and vias 212 of the conductive layers 208 of the core redistribution layers 210-1 and 210-2, and the conductive traces and vias 222-1 of the conductive layers 224-1 of the substrate redistribution layers 230-1 and 230-2 can form conductive wiring PH15 for power transmission (also referred to as power wiring PH15). In some embodiments, the wiring density of the conductive wiring PH15 in the core redistribution layers 210-1 and 210-2 is lower than that of the conductive wiring PH15 in the substrate redistribution layers 230-1 and 230-2, taking into account the material and process characteristics of the dielectric layers 210 and 230. Therefore, the conductive wiring PH15 has improved power integrity and is suitable for power transmission.

[0209] Since the core structure 220Q is a composite structure consisting of cores 202, 302, and 402 and dielectric layers 210 disposed on the opposing surfaces of cores 202, 302, and 402, and is formed from prepreg (PP), the mechanical strength of the substrate 200Q is improved. Furthermore, the conductive material 704 passing through cores 202, 302, and 402 and the four intermediate dielectric layers 210, and the conductive material 606 passing through the core structure 220Q, can form conductive wiring PH15 and PH23 suitable for power transmission and signal transmission. Therefore, the semiconductor structure 500Q can achieve a balance between power integrity and signal integrity.

[0210] Figure 16 This is a schematic cross-sectional view of a semiconductor structure 500R according to certain embodiments of the present invention. The elements in the following embodiments are the same as those previously referenced. Figure 1 , Figure 5 , Figure 11 , Figure 12 , Figure 14 and Figure 15 The same or similar elements described will not be repeated.

[0211] like Figure 15 and Figure 16As shown, the differences between semiconductor structure 500J and semiconductor structure 500R include at least the following: the core structure 220R of the substrate 200R of semiconductor structure 500R further includes an integrated passive device (IPD) 270-1 embedded in the core 302 and an integrated passive device 270-2 embedded in the core 202. Furthermore, the core redistribution layer 210-1 may also include a via 212-3 and a conductive layer 208-3, and the substrate redistribution layer 230-1 may also include a via (not shown) and a conductive layer 224-3 for coupling with the integrated passive device 270-1. Additionally, the core redistribution layer 210-2 may also include a via 212-4 and a conductive layer 208-4, and the substrate redistribution layer 230-2 may also include a via (not shown) and a conductive layer 224-4 for coupling with the integrated passive device 270-2.

[0212] In some embodiments, integrated passive devices 270-1 and 270-2 of semiconductor structure 500R are embedded in cores 202 and 302 near the top surface 220RT and bottom surface 220BT of core structure 220R. For example Figure 16 As shown, the integrated passive device 270-1 is embedded in the core 302 of the core structure 220R of the substrate 200F. The core 302 is located near the top surface 220RT of the core structure 220R. For example, the integrated passive device 270-1 is disposed in a cavity (not shown) of the core 302. Furthermore, the pads (not shown) of the integrated passive device 270-1 can be exposed from the top surface 302T of the core 302. In this embodiment, the pads (not shown) of the integrated passive device 270-1 can be exposed from the top surface 302T of the core 302. In addition, the dielectric layer 210 can fill the remaining space between the integrated passive device 270-1 and the core 302 (not shown, such as the sidewalls of the cavity) to achieve isolation between the integrated passive device 270-1 and the core 302.

[0213] like Figure 16As shown, the integrated passive device 270-2 can be embedded in the core 202 of the core structure 220R of the substrate 200F. The core 202 is close to the bottom surface 220RB of the core structure 220R. For example, the integrated passive device 270-2 is disposed in a cavity (not shown) of the core 202. Furthermore, the pads (not shown) of the integrated passive device 270-2 can be exposed from the bottom surface 202B of the core 202. In this embodiment, the pads (not shown) of the integrated passive device 270-2 can be exposed from the bottom surface 202B of the core 202. In addition, the dielectric layer 210 can fill the remaining space between the integrated passive device 270-2 and the core 202 (not shown, such as the sidewalls of the cavity) to achieve isolation between the integrated passive device 270-2 and the core 202.

[0214] Since no vias and / or conductive traces (not shown) are provided in the two additional dielectric layers 210 between cores 302 and 402 and between cores 202 and 402, the integrated passive device 270 is not embedded in the core 402 of the core structure 220R of the substrate 200R.

[0215] In some embodiments, integrated passive devices 270-1 and 270-2 are coupled to pads of conductive layers 270-1 and 270-2 via vias and conductive layers in core redistribution layers 210-1 and 210-2 and substrate redistribution layers 230-1 and 230-2. For example... Figure 16 As shown, the pads (not shown) of conductive layer 270-1 are coupled to vias 212-3 and conductive layer 208-3 in the dielectric layer 210 of core redistribution layer 210-1, and vias (not shown) and conductive layer 224-3 in the dielectric layer 230 of substrate redistribution layer 230-1. The vias 212-3 and conductive layer 208-3 of core redistribution layer 210-1, and the vias (not shown) and conductive layer 224-3 of substrate redistribution layer 230-1 are disposed on (and close to) the top surface 302T of core 302.

[0216] like Figure 16 As shown, the pads of conductive layer 270-2 are coupled to vias 212-4 and conductive layer 208-4 in the dielectric layer 210 of core redistribution layer 210-2, and vias (not shown) and conductive layer 224-4 in the dielectric layer 230 of substrate redistribution layer 230-2. The vias and conductive layers of core redistribution layer 210-2 and substrate redistribution layer 230-2 are disposed on (and close to) the bottom surface 202B of core 202.

[0217] In this embodiment, the conductive traces and vias 212-3 of the conductive layer 208-3 of the core redistribution layer 210-1, and the conductive traces and vias (not shown) of the conductive layer 224-3 of the substrate redistribution layer 230-1 can form a conductive wiring PH33 (also called a power wiring PH33), which is coupled to conductive wiring PH15 or conductive wiring PH23. Furthermore, the conductive traces and vias 212-4 of the conductive layer 208-4 of the core redistribution layer 210-2, and the conductive traces and vias (not shown) of the conductive layer 224-4 of the substrate redistribution layer 230-2 can form a conductive wiring PH43 (also called a power wiring PH43), which is coupled to conductive wiring PH15 or conductive wiring PH23.

[0218] In some embodiments, the conductive materials 404, 704, 704, and 704 of semiconductor structures 500E-500H, 500J, and 500R can be similar to those of semiconductor structures 500B and 500D. Figure 2 and Figure 4 The conductive solid pillar (e.g., copper pillar) of conductive material 304 is used as a substitute.

[0219] Semiconductor structures 500E-500H, 500J, and 500R include multilayer multicore substrates 200E-200H, 200J, and 200R, wherein the core structure comprises multiple cores. Each substrate 200E-200H, 200J, and 200R has a core structure comprising at least two cores arranged alternately with three dielectric layers formed from prepreg (PP). In some embodiments, the core structure has a first via (e.g., vias TH12, TH13, TH14, TH14) passing through two cores and the dielectric layer between the cores. Furthermore, the core structure has a second via (e.g., vias TH22, TH23) passing through three cores 202, 302, 402, and three dielectric layers 210.

[0220] In addition to the advantages of semiconductor structures 500A to 500D, each of the multi-core substrates of semiconductor structures 500E-500H, 500J, and 500R includes multiple cores and dielectric layers between the cores. The dielectric layers between the cores, formed of, for example, prepreg (PP), can improve the mechanical strength of the core structure to withstand various external forces without cracking or yielding. Therefore, the thickness of each core in a multi-core structure can be thinner than the thickness of a single core in a single-core structure to meet the limitations of substrate height. The semiconductor structure can have improved mechanical strength and adjustable thickness.

[0221] Furthermore, semiconductor structures 500L to 500M and 500P to 500R can enhance power integrity and signal integrity performance by using denser conductive material and shorter lengths in the first via (e.g., vias TH12, TH13, TH14, TH14). Additionally, semiconductor structures 500L-500M and 500P-500R, with improved mechanical strength, can simplify semiconductor bonding technology (SBT) manufacturing processes. Moreover, semiconductor structures 5500L to 500M and 500P to 500R can utilize hybrid plated through-hole (PTH) or conductive pillar designs in multilayer core substrates.

[0222] This invention provides a semiconductor structure. The semiconductor structure includes a substrate. The substrate includes a first core having a first top surface and a first bottom surface. A first dielectric layer is disposed on the first top surface and the first bottom surface of the first core. The substrate has a first via through the first core and a second via through the first core and the first dielectric layer.

[0223] In some embodiments, the substrate further includes a first conductive material disposed in the first hole. The substrate further includes a second conductive material disposed in the second hole. In a first direction, a first dimension of the first conductive material is smaller than a second dimension of the second conductive material.

[0224] In some embodiments, the first terminal of the first conductive material and the second terminal of the second conductive material corresponding to the first terminal are close to the opposite surfaces of one of the first dielectric layers.

[0225] In some embodiments, the first terminal of the first conductive material is close to the inner surface of one of the first dielectric layers near the first core, while the second terminal of the second conductive material is close to the outer surface of one of the first dielectric layers away from the first core.

[0226] In some embodiments, the substrate further includes a second dielectric layer disposed on the first dielectric layer and opposite to the first core. The first dielectric layer and the second dielectric layer are made of different materials.

[0227] In some embodiments, the substrate further includes a first via disposed in the first dielectric layer and coupled to the first conductive material through a first conductive trace covering the first dielectric layer. The substrate further includes a second via disposed in the second dielectric layer and coupled to the second conductive material through a second conductive trace covering the second dielectric layer.

[0228] In some embodiments, the first through-hole has a first diameter, and the second through-hole has a second diameter. The second diameter is smaller than the first diameter.

[0229] In some embodiments, the first via and the first conductive trace are used for power transmission.

[0230] In some embodiments, the second via and the second conductive trace are used for signal transmission.

[0231] In some embodiments, the first conductive trace has a first linewidth, and the second conductive trace has a second linewidth. The second linewidth is smaller than the first linewidth.

[0232] In some embodiments, the substrate further includes a first integrated passive device embedded in the first core. The first integrated passive device is coupled to a third via and a third conductive trace disposed in the first dielectric layer on the top surface of the first core.

[0233] In some embodiments, the substrate further includes a second core disposed on the first core. One of the first dielectric layers is disposed between the first core and the second core.

[0234] In some embodiments, another of the first dielectric layers is disposed on the second core and opposite to one of the first dielectric layers.

[0235] In some embodiments, the first aperture further extends through the second core and one of the first dielectric layers, and the second aperture further extends through the second core and all of the first dielectric layers.

[0236] In some embodiments, the first hole further extends through another of the first dielectric layer.

[0237] In some embodiments, the substrate further includes a first integrated passive device embedded in the first core. The substrate further includes a second integrated passive device embedded in the second core. The first integrated passive device is separate from the second integrated passive device.

[0238] In some embodiments, the first integrated passive device and the second integrated passive device are coupled to vias and conductive traces disposed on the top and bottom surfaces of the first dielectric layer, except for one of the first dielectric layers.

[0239] In some embodiments, the first conductive material and the second conductive material have a hollow cylindrical shape or a solid cylindrical shape.

[0240] This invention provides a semiconductor structure. The semiconductor structure includes a substrate. The substrate includes a core structure. The core structure includes at least two cores and at least three first dielectric layers stacked on top of each other. The two cores are arranged alternately with the three first dielectric layers. The substrate has a first conductive material passing through one of the first cores and the first dielectric layers, and a second conductive material passing through the first cores and all the first dielectric layers.

[0241] In some embodiments, the first conductive material is used for signal transmission, while the second conductive material is used for power transmission.

[0242] In some embodiments, the substrate further includes an integrated passive device embedded in one of the cores. The first integrated passive device is coupled to a conductive trace disposed in one of the first dielectric layers near the top or bottom surface of the core structure.

[0243] In some embodiments, the substrate further includes at least two second dielectric layers disposed on the top and bottom surfaces of the core structure and connected to the top and bottom first dielectric layers. The three first dielectric layers and the two second dielectric layers are made of different materials.

[0244] While the invention has been described by way of example and preferred embodiments, it should be understood that the invention is not limited to the disclosed embodiments. Rather, it is intended to cover various modifications and similar arrangements (which will be apparent to those skilled in the art). Therefore, the scope of the appended claims should be given the broadest interpretation to cover all such modifications and similar arrangements.

Claims

1. A semiconductor structure, comprising: A substrate, wherein the substrate includes: A first core having a first top surface and a first bottom surface; A first dielectric layer is disposed on the first top surface and the first bottom surface of the first core. The substrate has a first hole that passes through the first core and a second hole that passes through the first core and the first dielectric layer.

2. The semiconductor structure of claim 1, wherein the substrate further comprises: The first conductive material is disposed in the first hole; as well as The second conductive material disposed in the second hole, wherein in the first direction, the first dimension of the first conductive material is smaller than the second dimension of the second conductive material.

3. The semiconductor structure of claim 2, wherein the first terminal of the first conductive material and the second terminal of the second conductive material corresponding to the first terminal are close to the opposite surfaces of one of the first dielectric layers.

4. The semiconductor structure of claim 1, wherein the substrate further comprises: A second dielectric layer is disposed on the first dielectric layer and opposite to the first core, wherein the first dielectric layer and the second dielectric layer are made of different materials.

5. The semiconductor structure of claim 4, wherein the substrate further comprises: A first via is disposed in the first dielectric layer and coupled to the first conductive material through a first conductive layer covering the first dielectric layer; as well as A second via is disposed in the second dielectric layer and coupled to the second conductive material through a second conductive layer covering the second dielectric layer.

6. The semiconductor structure of claim 5, wherein the first via has a first diameter and the second via has a second diameter, the second diameter being smaller than the first diameter.

7. The semiconductor structure of claim 5, wherein the first via and the first conductive layer are used for power transmission.

8. The semiconductor structure of claim 5, wherein the second via and the second conductive layer are used for signal transmission.

9. The semiconductor structure of claim 5, wherein the first conductive layer has a first linewidth, and the second conductive layer has a second linewidth, the second linewidth being smaller than the first linewidth.

10. The semiconductor structure of claim 1, wherein the substrate further comprises: A first integrated passive device embedded in the first core, wherein the first integrated passive device is coupled to a third via and a third conductive layer disposed on the top surface of the first core in the first dielectric layer.

11. The semiconductor structure of claim 1, wherein the substrate further comprises: A second core is disposed on the first core, wherein one of the first dielectric layers is disposed between the first core and the second core.

12. The semiconductor structure of claim 11, wherein another of the first dielectric layers is disposed on the second core and opposite to one of the first dielectric layers.

13. The semiconductor structure of claim 12, wherein the first aperture further penetrates one of the second core and the first dielectric layer, and the second aperture further penetrates the second core and all of the first dielectric layers.

14. The semiconductor structure of claim 13, wherein the first hole further extends through another of the first dielectric layer.

15. The semiconductor structure of claim 11, wherein the substrate further comprises: The first integrated passive device embedded in the first core; A second integrated passive device is embedded in the second core, wherein the first integrated passive device is separate from the second integrated passive device.

16. The semiconductor structure of claim 15, wherein the first integrated passive device and the second integrated passive device are coupled to vias and conductive traces disposed on the top and bottom surfaces of the first dielectric layer, other than one of the first dielectric layers.

17. A semiconductor structure comprising: A substrate, wherein the substrate includes: A core structure, wherein the core structure includes: At least two cores and at least three first dielectric layers are stacked on top of each other, wherein the at least two cores are arranged in an alternating manner with the at least three first dielectric layers. The core structure has a first conductive material passing through one of the at least two cores and the at least three first dielectric layers, and a second conductive material passing through the at least two cores and the at least three first dielectric layers.

18. The semiconductor structure of claim 17, wherein the first conductive material is used for signal transmission and the second conductive material is used for power transmission.

19. The semiconductor structure of claim 17, wherein the substrate further comprises: An integrated passive device embedded in one of the at least two cores, wherein the integrated passive device is coupled to a conductive trace in one of the at least three first dielectric layers disposed near the top or bottom surface of the core structure.

20. The semiconductor structure of claim 17, wherein the substrate further comprises: At least two second dielectric layers are disposed on the top and bottom surfaces of the core structure and connected to one of the top and bottom of the at least three first dielectric layers, wherein the at least three first dielectric layers and the at least two second dielectric layers are made of different materials.

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