A silicon nitride ceramic composition, a ceramic body, an electrostatic chuck, a method of manufacturing, and a semiconductor manufacturing apparatus
By introducing a silicon nitride ceramic composition of metal fluorides and transition metal oxides, the problems of untunable resistivity and poor corrosion resistance of Si3N4 ceramic materials in semiconductor devices are solved, and a silicon nitride ceramic body with high corrosion resistance and high thermal conductivity is prepared, which is suitable for electrostatic chucks and improves the stability and reliability of semiconductor manufacturing equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SINOMA ADVANCED NITRIDE CERAMICS CO LTD
- Filing Date
- 2026-02-10
- Publication Date
- 2026-06-16
AI Technical Summary
Existing Si3N4 ceramic materials have high and uncontrollable resistivity in semiconductor equipment, and are unstable in plasma environments, failing to meet the resistivity control requirements of electrostatic chucks. Furthermore, existing Si3N4 ceramic materials are not corrosion resistant in highly corrosive gases, affecting wafer adsorption stability and equipment reliability.
A silicon nitride ceramic composition containing Si3N4, metal fluoride sintering aids, and transition metal oxides was used to prepare a silicon nitride ceramic body with high corrosion resistance and high thermal conductivity by controlling the resistivity and forming a stable grain boundary phase during sintering, combined with optimized preparation methods such as tape casting-temperature isostatic pressing-gas pressure sintering process.
Stable control of the resistivity of Si3N4 ceramic material within the range of 108~1013 Ω·cm was achieved, the corrosion resistance was improved by 8 times, the thermal conductivity was increased to over 75 W·m-1·K-1, and the mechanical properties were excellent. It is suitable for high-performance electrostatic chucks and improves the long-term stability and reliability of semiconductor manufacturing equipment.
Smart Images

Figure CN121673068B_ABST