Method for evaluating performance loss of optoelectronic semiconductor device

Abstract

The invention provides a performance loss evaluation method for an optoelectronic semiconductor device. The method comprises the following steps: obtaining a single luminous intensity distribution image of the optoelectronic semiconductor device; determining the primary loss and the secondary loss of the optoelectronic semiconductor device; for each pixel point, fixing a secondary loss parameter as a value of a standard device with the same structure of the optoelectronic semiconductor device when leaving a factory, and solving a dominant loss parameter corresponding to the dominant loss based on a physical model; for each pixel point, correcting the secondary loss parameter according to the luminous intensity difference obtained by inversion based on the actually measured luminous intensity and the obtained secondary loss parameter and dominant loss parameter until the difference converges so as to obtain the secondary loss parameter of each pixel point; constructing a current J-V curve of the optoelectronic semiconductor device based on the primary loss parameter and the secondary loss parameter of each pixel point; and evaluating the performance loss of the optoelectronic semiconductor device according to comparison between the current J-V curve and the J-V curve of the optoelectronic semiconductor device and the standard device with the same structure.

Description

Technical Field

[0001] This application relates to the semiconductor field, and in particular to a method for evaluating the performance loss of optoelectronic semiconductor devices. Background Technology

[0002] Semiconductor optoelectronic devices, such as solar cells, photovoltaic modules in photovoltaic power plants, light-emitting diodes (LEDs), or similar PN junction devices, occupy a crucial position in the fields of semiconductors and electronics. With increasing usage time, semiconductor optoelectronic devices experience performance degradation. In practical applications, understanding this performance degradation is essential; therefore, evaluating the performance loss of optoelectronic semiconductor devices is necessary.

[0003] Existing methods for diagnosing performance loss in optoelectronic devices based on luminescent imaging have the following shortcomings: (1) The testing cost is high and the time consumption is long. For example, it is necessary to obtain the distribution map of the luminescence signal under multiple voltage or light conditions (i.e., different carrier injection conditions), perform differential or fitting on the luminescence images under different injection conditions, and diagnose the loss of optoelectronic devices. This is not suitable for large-scale testing scenarios, such as using a drone with a camera to fly over a photovoltaic power station to collect photoluminescence or electroluminescence images. If luminescence images under multiple conditions are required, the drone needs to fly in the air for a long time, which is not only time-consuming, but also a great test of the drone's endurance. In addition, the testing efficiency is low. For the testing of a single device, it takes several times longer than taking a single image because it is necessary to take pictures under multiple conditions. (2) Some device parameters change with injection conditions, leading to numerical errors. Under different injection levels, the dark saturation current density, ideality factor, and main recombination mechanism of the device will change, making the parameters obtained based on image difference not strictly consistent; (3) For the latest image representation quantitative analysis methods that rely on pure machine learning, there is a lack of physical constraints if they rely purely on pure machine learning. Some existing methods attempt to directly predict device performance quantitatively from luminescent images through deep learning and deduce the efficiency loss distribution. However, such methods are highly dependent on training data (requiring a large amount of sample data and still difficult to cover various scenarios), have limited generalization ability, and lack physical interpretability. Therefore, it is difficult to guarantee the accuracy of diagnosis or device parameter acquisition. Summary of the Invention

[0004] According to one embodiment, this application provides a method for evaluating the performance loss of an optoelectronic semiconductor device, comprising: S1: obtaining a single luminous intensity distribution image of the optoelectronic semiconductor device; S2: determining the dominant loss and secondary loss of the optoelectronic semiconductor device based on the single luminous intensity distribution image; S3: for each pixel, fixing the secondary loss parameter corresponding to the secondary loss to the value of a standard device with the same structure as the optoelectronic semiconductor device at the time of manufacture, and solving the dominant loss parameter corresponding to the dominant loss based on a physical model; S4: for each pixel, correcting the secondary loss parameter based on the difference between the measured luminous intensity obtained in step S1 and the luminous intensity obtained by inversion based on the secondary loss parameter and the dominant loss parameter obtained in step S3, until the difference converges, to obtain the secondary loss parameter for each pixel; S5: constructing the current JV curve of the optoelectronic semiconductor device based on the dominant loss parameter of each pixel obtained in step S3 and the secondary loss parameter of each pixel obtained in step S4; S6: evaluating the performance loss of the optoelectronic semiconductor device by comparing the current JV curve with the JV curve of a standard device with the same structure as the optoelectronic semiconductor device.

[0005] Furthermore, in step S1, the single emission intensity distribution image is obtained by injecting a single excitation source with constant parameters into the optoelectronic semiconductor device.

[0006] Furthermore, in step S2, based on the single luminescence intensity distribution image, it is determined that one of the series parasitic resistance loss and the carrier recombination loss is the dominant loss of the optoelectronic semiconductor device, and the other is the secondary loss.

[0007] Furthermore, in step S2, based on the uniformity and brightness characteristics of the single luminous intensity distribution image, it is determined that one of the series parasitic resistance loss and the carrier recombination loss is the dominant loss of the optoelectronic semiconductor device, and the other is the secondary loss.

[0008] Furthermore, if the dominant loss of the optoelectronic semiconductor device is carrier recombination loss, step S3 includes: S31: setting the initial junction voltage. Equal to the standard junction voltage of the optoelectronic semiconductor device and the standard device of the same structure. Initial series parasitic resistance The standard series parasitic resistance of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. S32: The correction constant is derived from the relative luminous intensity measured based on the single luminous intensity distribution image. The dark saturation current density at each pixel is calculated. ,in Representing the iteration S33: Calculate the dark current density of each pixel. (The last part is a natural number, likely S33, which is not directly related to the previous sentence and can be omitted.) S34: Update junction voltage S35: Determine if the condition is met. ,in Given a threshold, if so, output Preliminary main loss parameters If not, let Proceed to step S32.

[0009] Furthermore, if the dominant loss of the optoelectronic semiconductor device is carrier recombination loss, step S4 includes: S41: Initiating a new iteration, setting the initial junction voltage... Initial series parasitic resistance The standard series parasitic resistance of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. S42: The correction constant is derived from the relative luminous intensity measured based on the single luminous intensity distribution image. The dark saturation current density at each pixel is calculated. ,in Representing the iteration It is a natural number greater than or equal to 1; S43: Calculate the dark current density for each pixel. S44: Update series parasitic resistance ,in This represents the standard dark current density of a standard device with the same structure as this optoelectronic semiconductor device; S45: Update junction voltage S46: Reconstructed luminous intensity Determine whether it satisfies ,in Given a threshold, if so, output For the final secondary loss parameter If not, let Proceed to step S42.

[0010] Furthermore, if the dominant loss of the optoelectronic semiconductor device is the series parasitic resistance loss, step S3 includes: S311: setting the initial junction voltage. Equal to the standard junction voltage of the optoelectronic semiconductor device and the standard device of the same structure. Initial dark saturation current density The standard dark saturation current density of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. S322: Calculate the dark current density of each pixel. ,in Representing the iteration S333: Calculate the series parasitic resistance of each pixel. (The last part is a list of numbers, likely related to the previous sentence and can be left as is.) S344: Update junction voltage S355: Determine if the condition is met. ,in Given a threshold, if so, output Preliminary main loss parameters If not, let Proceed to step S322.

[0011] Furthermore, if the dominant loss of the optoelectronic semiconductor device is the series parasitic resistance loss, step S4 includes: S411: Initiating a new iteration, setting the initial junction voltage... Initial dark saturation current density The standard dark saturation current density of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. S422: Calculate the dark current density for each pixel. ,in Representing the iteration S433: Calculate the series parasitic resistance of each pixel. (The last part is a natural number, likely S433, which is not directly related to the preceding sentence and can be omitted.) ,in This represents the standard dark current density of a standard device with the same structure as this optoelectronic semiconductor device; S444: Update junction voltage S455: Update calibration constants Dark saturation current density S466: Reconstruct luminescence intensity and determine convergence. Determine whether it satisfies ,in Given a threshold, if so, output For the final secondary loss parameter If not, let Proceed to step S422.

[0012] Furthermore, in step S6, the difference between the current JV curve and the corresponding operating point of the JV curve of a standard device with the same structure as the optoelectronic semiconductor device is calculated, and the performance loss of the optoelectronic semiconductor device is evaluated based on the difference.

[0013] The features and technical advantages of this disclosure have been outlined quite extensively above to facilitate a better understanding of the detailed description that follows. Additional features and advantages of this disclosure, which form the subject matter of the claims, will be described below. Those skilled in the art will understand that the disclosed concepts and specific embodiments can be readily used as the basis for modifying or designing other structures or processes for achieving the same purpose as this disclosure. Those skilled in the art will also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure as set forth in the appended claims. Attached Figure Description

[0014] To gain a more complete understanding of this disclosure and its advantages, the following description is given in conjunction with the accompanying drawings, wherein: Figure 1 A flowchart of a method for evaluating the performance loss of optoelectronic semiconductor devices according to an embodiment of this application is shown; Figure 2 This illustration shows a schematic diagram of the electroluminescence intensity distribution when the excitation source is an electrical signal and the optoelectronic semiconductor device is a photovoltaic module, according to an embodiment of this application. Figure 3 The dark saturation current density obtained according to an embodiment of this application is shown. Distribution diagram; Figure 4 The series parasitic resistance obtained according to an embodiment of this application is shown. Distribution diagram; Figure 5 The diagram illustrates a current JV characteristic curve constructed according to an embodiment of this application and a schematic diagram of the JV characteristic curve of a standard device.

[0015] Unless otherwise stated, corresponding numbers and symbols in the various figures generally refer to corresponding parts. These figures are drawn to clearly illustrate relevant aspects of the various embodiments and are not necessarily drawn to scale. Detailed Implementation

[0016] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0017] Research has revealed that the performance losses of optoelectronic semiconductor devices can be categorized into series parasitic resistance losses and carrier recombination losses based on their physical mechanisms. For example, taking silicon photovoltaic modules: 1. Silicon wafer cracks and gate wire breaks constitute series parasitic resistance losses; 2. Photoinduced degradation, light- and high-temperature induced degradation, ultraviolet-induced degradation, and potential-induced degradation constitute carrier recombination losses. Therefore, this application aims to assess the performance losses of optoelectronic semiconductor devices by quantitatively diagnosing series parasitic resistance losses and carrier recombination losses.

[0018] One embodiment of this application proposes a method for evaluating the performance loss of optoelectronic semiconductor devices. Please refer to [link to relevant documentation]. Figure 1 The flowchart shown here is a method for evaluating the performance loss of optoelectronic semiconductor devices according to an embodiment of this application, which includes: S1: Obtain a single image of the luminous intensity distribution of the optoelectronic semiconductor device; S2: Determine the dominant and secondary losses of the optoelectronic semiconductor device based on the single luminous intensity distribution image; S3: For each pixel, fix the secondary loss parameter corresponding to the secondary loss to the value of the standard device with the same structure as the optoelectronic semiconductor device when it leaves the factory, and solve the dominant loss parameter corresponding to the dominant loss based on the physical model; S4: For each pixel, the secondary loss parameter is corrected based on the difference between the measured luminous intensity obtained in step S1 and the luminous intensity obtained by inversion based on the secondary loss parameter and the dominant loss parameter obtained in step S3, until the difference converges, so as to obtain the secondary loss parameter for each pixel. S5: Construct the current JV curve (output current density-voltage curve) of the optoelectronic semiconductor device based on the dominant loss parameter of each pixel obtained in step S3 and the secondary loss parameter of each pixel obtained in step S4. S6: Based on the comparison between the current JV curve and the JV curve of a standard device with the same structure as the optoelectronic semiconductor device, evaluate the performance loss of the optoelectronic semiconductor device.

[0019] Specifically, in step S1, a single emission image of the optoelectronic semiconductor device is obtained by injecting a single excitation source with constant parameters into the optoelectronic semiconductor device, that is, a single emission intensity distribution image is obtained. It can be seen that this application only relies on single emission test, which avoids differential error caused by parameter changes with injection conditions, avoids the uncertainty introduced by multi-condition testing, and improves the consistency and stability of device performance loss assessment.

[0020] In practical applications, a single excitation source with constant parameters can be either a single optical signal or a single electrical signal, and the excitation conditions do not need to be changed during the test. When the excitation source is a single optical signal (PL), the single excitation source with constant parameters is a single light source with constant light intensity and wavelength (the incident photon energy must be greater than the bandgap of the optoelectronic semiconductor device). When the excitation source is a single electrical signal (EL), the single excitation source with constant parameters is a single power supply with constant voltage amplitude or a single power supply with constant current amplitude.

[0021] Taking a real photovoltaic power station as an example, the electroluminescence image is collected by applying a constant current to a string of modules (multiple modules connected in series). In practical applications, a relatively low injection current is usually used, such as 20-30% of the injection current of the module's short-circuit circuit under sufficient sunlight. This is because it saves electricity, and the physical parameters of the photovoltaic device remain basically unchanged under low injection conditions. That is, the physical parameters of the device extracted at this time are close to the physical parameters of the photovoltaic device when it is operating at its maximum power point under sufficient sunlight. In this way, once a certain excitation source is selected, there is no need to change its parameters or switch between multiple excitation sources, making the operation simple and low-cost.

[0022] Specifically, in step S1, when a single excitation source with constant parameters is injected into the optoelectronic semiconductor device, the device undergoes radiative recombination and emits light. By acquiring a single image of the relative luminous intensity distribution of the device using an imaging system, the relative luminous intensity of each pixel of the optoelectronic semiconductor device can be obtained from the luminous intensity distribution image. For details, please refer to [link / reference]. Figure 2 The image shown is a schematic diagram of the electroluminescence intensity distribution when the excitation source is an electrical signal and the optoelectronic semiconductor device is a photovoltaic module (the photovoltaic module can be a perovskite photovoltaic module, a silicon photovoltaic module, or a sub-perovskite photovoltaic module or a sub-silicon photovoltaic module in a perovskite-silicon tandem photovoltaic module). Typically, the photovoltaic module contains photovoltaic cells connected in series and in parallel. The horizontal and vertical axes represent the lengths of the optoelectronic semiconductor device in the horizontal and vertical directions, respectively. The numbers represent the cell numbers contained in the module, and the brightness represents the relative electroluminescence intensity, where the brighter the light, the greater the relative luminescence intensity.

[0023] As mentioned above, the performance loss types (i.e., attenuation modes) of optoelectronic semiconductor devices are classified into series parasitic resistance loss and carrier recombination loss from the perspective of device physics. Therefore, the single emission intensity distribution image obtained in step S1 already contains information on both series parasitic resistance loss and carrier recombination loss. However, if the two loss parameters are solved jointly without distinction (equivalent to one equation with multiple unknown parameters), it will lead to unstable calculations and unreliable results.

[0024] Research has revealed that the characteristics of the luminous intensity distribution image (including luminous uniformity and brightness features) often differ for different attenuation modes. For example, whether the luminous intensity distribution image shows a uniform darkening of a region or uneven brightness corresponds to different attenuation modes. Furthermore, whether the luminous intensity distribution image shows a uniform darkening of a region or uneven brightness can be easily determined through machine learning, AI, or manual methods. In other words, this application can determine the dominant loss type of optoelectronic semiconductor devices using a single luminous intensity distribution image without quantitative calculations. This gives it high generalization ability and reliability, making it applicable to a variety of optoelectronic semiconductor devices.

[0025] Specifically, in step S2, based on the single luminescence intensity distribution image, one of the series parasitic resistance loss and the carrier recombination loss is determined to be the dominant loss of the optoelectronic semiconductor device, and the other is the secondary loss.

[0026] More specifically, in step S2, based on the uniformity and brightness characteristics of the single luminous intensity distribution image, it is determined that one of the series parasitic resistance loss and the carrier recombination loss is the dominant loss of the optoelectronic semiconductor device, and the other is the secondary loss.

[0027] In fact, the parameter corresponding to the series parasitic resistance loss is the series parasitic resistance. The parameter corresponding to the carrier recombination loss is the dark saturation current density. See also Figure 2 In the luminous intensity distribution image, each pixel (xy) in each cell (corresponding to the grid in the image) can be considered as a parallel cell unit. Figure 2 A single image of luminous intensity distribution can be used to extract the relative luminous intensity of each pixel (xy). That is, the measured luminous intensity obtained in step S1, and the relative luminous intensity at pixel xy based on the exponential relationship between luminous intensity and junction voltage. Represented as ,in Indicates thermal voltage. As a correction constant, This represents the junction voltage at pixel xy of the device. Furthermore, the correction constant... Dark saturation current density at pixel xy There is a corresponding relationship: ,in This is a scaling factor, which can be determined by inverse calibration of the optoelectronic semiconductor device with the same structure as the standard device. For example, when testing the JV characteristics of the optoelectronic semiconductor device with the same structure as the standard device, the scaling factor that matches the JV curve characteristics constructed based on light emission with the current JV curve characteristics obtained by testing is solved. The series parasitic resistance at pixel xy is also considered. The calculation formula is ,in Standard junction voltage, The junction voltage at the pixel. Standard dark current density, The dark current density at each pixel. The standard series parasitic resistance is the same as the standard parameters of the optoelectronic semiconductor device when it leaves the factory. The voltage at the device terminal is considered the same for all parallel pixel units within the same device plane. The junction voltage at pixel xy of the device can be expressed as: . Let be the dark current density at pixel xy. .

[0028] In fact, the standard relative luminous intensity can be obtained from the datasheet of the same structure as the optoelectronic semiconductor device. Standard dark saturation current density Standard series parasitic resistance Standard junction voltage and standard calibration constant .

[0029] Specifically, if the dominant loss of the optoelectronic semiconductor device is carrier recombination loss, step S3 includes: S31: Set the initial junction voltage Equal to the standard junction voltage of the optoelectronic semiconductor device and the standard device of the same structure. Initial series parasitic resistance The standard series parasitic resistance of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. ; S32: Correction constants are derived from the relative luminous intensity measured based on the single luminous intensity distribution image. The dark saturation current density at each pixel is calculated. ,in Representing the iteration It is a natural number greater than or equal to 1; S33: Calculate the dark current density for each pixel. ; S34: Update junction voltage ; S35: Determine if the condition is met. ,in Given a threshold, if so, output Preliminary main loss parameters If not, let Proceed to step S32.

[0030] More specifically, if the dominant loss of the optoelectronic semiconductor device is carrier recombination loss, step S4 includes: S41: Start a new iteration, set the initial junction voltage Initial series parasitic resistance The standard series parasitic resistance of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. ; S42: Correction constants are derived from the relative luminous intensity measured based on the single luminous intensity distribution image. The dark saturation current density at each pixel is calculated. ,in Representing the iteration It is a natural number greater than or equal to 1; S43: Calculate the dark current density for each pixel. ; S44: Update series parasitic resistance ,in This represents the standard dark current density of a standard device with the same structure as this optoelectronic semiconductor device; S45: Update junction voltage ; S46: Reconstructed luminous intensity Determine whether it satisfies ,in Given a threshold, if so, output For the final secondary loss parameter If not, let Proceed to step S42.

[0031] Specifically, if the dominant loss of the optoelectronic semiconductor device is series parasitic resistance loss, step S3 includes: S311: Set the initial junction voltage Equal to the standard junction voltage of the optoelectronic semiconductor device and the standard device of the same structure. Initial dark saturation current density The standard dark saturation current density of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. ; S322: Calculate the dark current density for each pixel. ,in Representing the iteration It is a natural number greater than or equal to 1; S333: Calculate the series parasitic resistance of each pixel. ; S344: Update junction voltage ; S355: Determine if the condition is met. ,in Given a threshold, if so, output Preliminary main loss parameters If not, let Proceed to step S322.

[0032] More specifically, if the dominant loss of the optoelectronic semiconductor device is series parasitic resistance loss, step S4 includes: S411: Initiate a new iteration, setting the initial junction voltage Initial dark saturation current density The standard dark saturation current density of this optoelectronic semiconductor device is the same as that of a standard device with the same structure. ; S422: Calculate the dark current density for each pixel. ,in Representing the iteration S433: Calculate the series parasitic resistance of each pixel. (The last part is a natural number, likely S433, which is not directly related to the preceding sentence and can be omitted.) ,in This is the standard dark current density of the same structure as the optoelectronic semiconductor device. S444: Update junction voltage ; S455: Update calibration constants Dark saturation current density ; S466: Reconstruct luminescence intensity and determine convergence Determine whether it satisfies ,in Given a threshold, if so, output For the final secondary loss parameter If not, let Proceed to step S422.

[0033] In one embodiment, please refer to Figure 3 The dark saturation current density obtained in one embodiment of this application is shown. Distribution diagram, where numbers represent the battery numbers contained in the component, the horizontal and vertical axes represent the lengths of the optoelectronic semiconductor devices along the horizontal and vertical axes, respectively, and the brightness represents... Size, the brighter it is The larger.

[0034] Please see Figure 4 The series parasitic resistance obtained in one embodiment of this application is shown. Distribution diagram, where numbers represent the battery numbers contained in the component, the horizontal and vertical axes represent the lengths of the optoelectronic semiconductor devices along the horizontal and vertical axes, respectively, and the brightness represents... Size, the brighter it is The larger.

[0035] In one embodiment, in step S5, based on the obtained and ,according to Establish the current JV curve for optoelectronic semiconductor devices, where, Photocurrent density; This refers to the device terminal voltage; Boltzmann's constant; For temperature.

[0036] In one embodiment, step S6 calculates the difference between the current JV curve and the corresponding operating point of the JV curve of a standard device with the same structure as the optoelectronic semiconductor device, and evaluates the performance loss of the optoelectronic semiconductor device based on the difference. Generally, the larger the difference, the more severe the loss. See also... Figure 5 The diagram shows the constructed current JV characteristic curve and the JV characteristic curve of the standard device. The horizontal axis represents voltage V, the vertical axis represents current density J, the solid line represents the constructed current JV characteristic curve, and the dashed line represents the JV characteristic curve of the standard device with the same structure.

[0037] This is because the JV curve typically reflects the comprehensive characteristics of optoelectronic semiconductors, such as carrier transport, carrier recombination, and series parasitic resistance. Therefore, the loss status of optoelectronic semiconductors can be obtained by comparing the current JV curve with the standard JV curve. For standard devices, the JV curve can be generated by applying a scanning voltage V within a preset range to the device under test under constant irradiance or specified electrical injection conditions and recording the corresponding output current density J.

[0038] Although embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations may be made herein without departing from the spirit and scope of the present disclosure as defined by the appended claims.

[0039] Furthermore, the scope of this application is not intended to be limited to the specific embodiments of the processes, machines, manufactures, compositions of matter, apparatuses, methods, and steps described in the specification. As will be readily understood by those skilled in the art from the disclosure of this publication, processes, machines, manufactures, compositions of matter, means, methods, or steps that perform substantially the same function, currently exist or will be developed or implemented thereafter, will yield substantially the same results as the corresponding embodiments described herein that are available according to this disclosure. Therefore, the appended claims are intended to include such processes, machines, manufactures, compositions of matter, apparatuses, methods, or steps within their scope.

Claims

1. A method of optoelectronic semiconductor device performance loss assessment, characterized by, The method comprises: S1: obtaining a single light emission intensity distribution image of the optoelectronic semiconductor device; S2: determining a dominant loss and a secondary loss of the optoelectronic semiconductor device according to the single light emission intensity distribution image; S3: for each pixel point, fixing a secondary loss parameter corresponding to the secondary loss as a value of a same-structure standard device of the optoelectronic semiconductor device at the time of leaving the factory, and solving a dominant loss parameter corresponding to the dominant loss based on a physical model; S4: for each pixel point, correcting the secondary loss parameter based on a difference between the measured light emission intensity obtained in step S1 and the light emission intensity obtained by inversely calculating the secondary loss parameter and the dominant loss parameter obtained in step S3 until the difference converges, so as to obtain the secondary loss parameter of each pixel point; S5: constructing a current J-V curve of the optoelectronic semiconductor device based on the dominant loss parameter of each pixel point obtained in step S3 and the secondary loss parameter of each pixel point obtained in step S4; S6: comparing the current J-V curve with a J-V curve of a same-structure standard device of the optoelectronic semiconductor device, and evaluating the performance loss of the optoelectronic semiconductor device.

2. The method of optoelectronic semiconductor device performance loss assessment according to claim 1, wherein, In step S1, the single light emission intensity distribution image is obtained by forming a single light emission image of the optoelectronic semiconductor device under injection of a single excitation source with constant parameters.

3. The method for optoelectronic semiconductor device performance loss assessment according to claim 1, wherein, In step S2, one of the series parasitic resistance loss and the carrier recombination loss is determined as the dominant loss of the optoelectronic semiconductor device, and the other is determined as the secondary loss according to the single light emission intensity distribution image.

4. The method of claim 3, wherein the step of determining the performance loss of the optoelectronic semiconductor device is performed by: In step S2, one of the series parasitic resistance loss and the carrier recombination loss is determined as the dominant loss of the optoelectronic semiconductor device, and the other is determined as the secondary loss according to the uniformity and brightness characteristics of the single light emission intensity distribution image.

5. The optoelectronic semiconductor device performance loss assessment method of claim 3, wherein, If the dominant loss of the optoelectronic semiconductor device is the carrier recombination loss, step S3 comprises: S31: setting an initial junction voltage equal to a standard junction voltage of a standard device of the same structure as the optoelectronic semiconductor device , an initial series parasitic resistance being equal to a standard series parasitic resistance of a standard device of the same structure as the optoelectronic semiconductor device ; S32: inversely deduce a correction constant from the relative luminous intensity based on the single luminous intensity distribution image measurement , obtain the dark saturation current density at each pixel point , wherein represents the th iteration, is a natural number greater than or equal to 1; S33: Calculate the dark current density of each pixel point ; S34: update junction voltage ; S35: determine whether or not wherein is a given threshold, if yes, output is a preliminary main loss parameter , if no, let enter step S32.

6. The method of claim 5, wherein the step of determining the performance loss of the optoelectronic semiconductor device is performed by: If the dominant loss of the optoelectronic semiconductor device is the carrier recombination loss, step S4 comprises: S41 : Start a new iteration, let the initial junction voltage , the initial series parasitic resistance be the standard series parasitic resistance of the optoelectronic semiconductor device of the same structure standard device ; S42: reverse the correction constant from the relative luminous intensity based on the single sheet luminous intensity distribution image measurement , obtain the dark saturation current density at each pixel point , wherein represents the th iteration, is a natural number greater than or equal to 1; S43: Calculate the dark current density of each pixel point ; S44: updating the serial parasitic resistance wherein is the standard dark current density of the optoelectronic semiconductor device to the standard device. S45: update junction voltage ; S46: reconstruct luminescence intensity , determine whether or not wherein is a given threshold value, if yes, output is the final secondary loss parameter , if no, let enter step S42.

7. The method for optoelectronic semiconductor device performance loss assessment according to claim 3, wherein, If the dominant loss of the optoelectronic semiconductor device is the series parasitic resistance loss, step S3 comprises: S311: setting an initial junction voltage equal to a standard junction voltage of a standard device of the same structure as the optoelectronic semiconductor device , an initial dark saturation current density is a standard dark saturation current density of a standard device of the same structure as the optoelectronic semiconductor device ; S322: calculate the dark current density of each pixel point wherein represents the first iteration, is a natural number greater than or equal to 1; S333: Calculate the series parasitic resistance of each pixel point ; S344: update junction voltage ; S355: judge whether or not wherein is a given threshold, if yes, output is a preliminary main loss parameter , if no, let enter step S322.

8. The method of optoelectronic semiconductor device performance loss assessment according to claim 7, wherein, If the dominant loss of the optoelectronic semiconductor device is the series parasitic resistance loss, step S4 comprises: S411: Start a new iteration, set the initial junction voltage , the initial dark saturation current density to be the standard dark saturation current density of the optoelectronic semiconductor device of the same structure as the standard device ; S422: calculate the dark current density of each pixel point wherein represents the first iteration, is a natural number greater than or equal to 1; S433: calculate the series parasitic resistance of each pixel point wherein is the standard dark current density of the optoelectronic semiconductor device to the standard device. S444: update junction voltage ; S455: update calibration constants dark saturation current density ; S466: Reconstruct the light emission intensity and determine convergence , determine whether the following condition is satisfied wherein is a given threshold value, if yes, output is the final secondary loss parameter , if no, let , and go to step S422.

9. The method for optoelectronic semiconductor device performance degradation assessment according to claim 1, wherein, In step S6, the difference between the corresponding working points of the current J-V curve and the J-V curve of the same-structure standard device of the optoelectronic semiconductor device is calculated, and the performance loss of the optoelectronic semiconductor device is evaluated according to the difference.

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