Small wide instantaneous bandwidth radio frequency receiving front end SiP module based on HTCC

Abstract

The invention discloses a small-sized wide instantaneous bandwidth radio frequency receiving front-end SiP module based on an HTCC, and belongs to the technical field of microwaves and radio frequency. The radio frequency receiving front end is realized on the basis of an SiP module of the HTCC, the mirror image frequency is far away from the radio frequency signal frequency spectrum through a high local oscillator dual-frequency conversion mode, and the spurious component generated by frequency mixing is moved to a high-frequency area outside an intermediate-frequency passband, so that wide instantaneous bandwidth and high spurious suppression are realized. According to the invention, miniaturization of the SiP module is realized based on the HTCC technology; a secondary frequency conversion superheterodyne circuit architecture and a high local oscillator design are combined, so that the instantaneous working bandwidth is widened to 4GHz, and meanwhile, high spurious suppression is realized; in addition, the vertical interconnection structure is improved, long-distance low-loss transmission of radio-frequency signals is achieved, and the size is further reduced. The ultra-wideband low-noise amplifier has the advantages of miniaturization, wide instantaneous bandwidth, low noise amplification and high spurious suppression, and a solution is provided for miniaturization and low-cost mass production of an ultra-wideband radio frequency system.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of microwave and radio frequency technology, and particularly relates to a small-size wide instantaneous bandwidth radio frequency receiving front-end SiP module based on high-temperature co-fired ceramic (HTCC) technology. BACKGROUND

[0002] The 2-18 GHz frequency band is the core spectrum of radar, satellite communication and 5G millimeter wave technology, and its radio frequency receiving front-end is a key module in a wireless system, which is widely used in radar detection, wireless communication, satellite navigation and military defense fields. With the increasing complexity of electromagnetic environment and the explosive growth of transmission capacity demand, the radio frequency receiving front-end is required to have wide instantaneous bandwidth, low noise coefficient, high spurious suppression and wide-band high-density integration.

[0003] Early radio frequency receivers are designed with discrete components and hybrid modules, which, although achieving functional integration, have problems such as low efficiency, insufficient integration density, long signal transmission path, etc., and are difficult to meet the performance requirements of high-frequency wideband application scenarios. SiP technology efficiently integrates active / passive components manufactured by different processes through heterogeneous integration and three-dimensional stacking, providing key support for high-performance integrated transceivers. In packaging technology, high-temperature co-fired ceramic (HTCC) technology is an ideal choice for high-density system integration due to its high thermal conductivity, good solder joint reliability, low material cost, and support for multi-layer three-dimensional architecture and high-density interconnection.

[0004] However, existing radio frequency receiving front-ends usually have limited instantaneous bandwidth. In order to enhance the instantaneous bandwidth while maintaining good harmonic and spurious suppression performance, the method of increasing the local oscillator (LO) frequency is often used. However, under the condition of high LO frequency, it is a major technical challenge to design an interconnection structure with low loss characteristics and high-performance filtering transmission lines.

[0005] In summary, in order to meet the application requirements of wide instantaneous bandwidth, low noise coefficient, high spurious suppression and wide-band high-density integration at the same time, there is an urgent need for a new type of radio frequency front-end SiP module, which can realize innovation in size, circuit architecture and wide-band high-frequency transmission interconnection structure, solve many problems existing in existing radio frequency front-ends, and provide an innovative solution for the miniaturization and low-cost mass production of ultra-wideband radio frequency front-end systems. SUMMARY

[0006] In view of the deficiencies of the prior art, the application provides a small-size wide instantaneous bandwidth radio frequency receiving front-end SiP module based on HTCC. The application effectively solves the above technical problems through innovative circuit design, architecture design and five kinds of wide-band low-loss transmission interconnection structures of three categories. Among them, based on the advantages of HTCC process supporting multi-layer three-dimensional architecture and high-density interconnection, the miniaturization of the SiP module is realized; combined with the superheterodyne circuit architecture and high local oscillator design, the instantaneous operating bandwidth is widened to 4GHz, and the spurious suppression is higher than 50dBc; based on the impedance / mode matching method and the odd-even mode constraint principle, the surface high-frequency ultra-wideband zigzag substrate integrated waveguide (SIW) multifunctional transmission interconnection structure and the interlayer coaxial vertical interconnection structure are designed, realizing long-distance low-loss transmission of radio frequency signals, and the interconnection system is integrated with the SiP module, further reducing the size. The application has the performance characteristics of miniaturization, wide instantaneous bandwidth, low noise amplification and high spurious suppression, and provides an innovative solution for the miniaturization and low-cost mass production of ultra-wideband radio frequency systems.

[0007] The specific technical solutions adopted by the application are as follows:

[0008] A small-size high-integration radio frequency receiving front-end SiP module based on HTCC, characterized in that the radio frequency receiving front-end is realized based on the HTCC SiP module, and the radio frequency receiving front-end realizes wide instantaneous bandwidth and high spurious suppression by a high local oscillator dual-frequency conversion mode, moving the image frequency away from the radio frequency signal spectrum and moving the spurious components generated by mixing to a high-frequency region outside the intermediate frequency (IF) passband.

[0009] Preferably, the radio frequency receiving front-end comprises a radio frequency signal pre-processing module, a switch, a straight-through output module, a frequency conversion output module, a first local oscillator signal generation module and a second local oscillator signal generation module.

[0010] The radio frequency signal pre-processing module is used for pre-processing the wide-band input radio frequency signal and inputting the radio frequency signal to the subsequent module through the switch.

[0011] The switch inputs the radio frequency signal of 4 GHz and below to the straight-through output module and inputs the radio frequency signal of above 4 GHz to the frequency conversion output module based on the frequency band of the input radio frequency signal.

[0012] The first local oscillator signal generation module is used for generating a first high-frequency local oscillator signal and inputting the local oscillator signal to the frequency conversion output module.

[0013] The second local oscillator signal generation module is used for generating a second high-frequency local oscillator signal and inputting the local oscillator signal to the frequency conversion output module.

[0014] The straight-through output module directly outputs the input radio frequency signal of 4 GHz and below;

[0015] The frequency conversion output module converts the radio frequency signal of 4 GHz or above into an intermediate frequency signal based on the first-stage high-frequency local oscillator signal and the second-stage high-frequency local oscillator signal and outputs the intermediate frequency signal.

[0016] Preferably, the first-stage local oscillator signal generation module generates the first-stage high-frequency local oscillator signal by inputting an LO1 signal, and sequentially amplifying, tripling, filtering and amplifying the LO1 signal again.

[0017] The second-stage local oscillator signal generation module generates the second-stage high-frequency local oscillator signal by inputting an LO2 signal, and sequentially amplifying, tripling and filtering the LO2 signal.

[0018] The frequency conversion output module converts the radio frequency signal of 4 GHz or above into an intermediate frequency signal based on the first-stage high-frequency local oscillator signal and the second-stage high-frequency local oscillator signal and outputs the intermediate frequency signal.

[0019] Preferably, the filters in the first-stage local oscillator signal generation module and the second-stage local oscillator signal generation module are SIW filters; and in the frequency conversion output module, the first filter through which the IF1 signal passes is an SIW filter.

[0020] Preferably, the SiP module is electrically interconnected with the PCB through BGA solder balls.

[0021] Preferably, the wiring architecture of the SiP module adopts a microstrip-strip line-microstrip vertical interconnection structure, and realizes layered isolation layout to reduce signal interference and improve layout density.

[0022] Preferably, in the microstrip-strip line-microstrip vertical interconnection structure, the microstrips and the strip lines between different layers are interconnected through signal vias; the signal vias are equivalent to a plurality of series inductors, which will introduce significant parasitic inductance; to suppress this effect, a capacitance compensation method is adopted to offset the inductance: (1) a matching pad is added in the middle of the signal via, and a matching capacitance is formed between the matching pad and the surrounding ground shielding via; (2) the distance between the signal via and the adjacent ground shielding via is reduced to increase the inherent capacitance between the two kinds of vias; (3) the pad area at the connection between the microstrip line and the signal via is expanded to increase the capacitance between the pad and the ground layer.

[0023] Preferably, the mixers in the radio frequency receiving front end are all double-balanced mixers. Utilizing their symmetrical cancellation characteristics, they generate only one-quarter of the spurious components of a single-balanced mixer, effectively suppressing all spurious components generated by the combination of even harmonics of RF and LO signals.

[0024] The design principle of this invention is as follows:

[0025] The receiver front end first filters and amplifies the received radio frequency signal. For the frequency range of 2-4 GHz (inclusive), the second harmonic of 2 GHz is located in the passband and is difficult to filter out with a filter. Therefore, in order to meet the requirements of 4 GHz instantaneous bandwidth and high spurious suppression, the system outputs the 2-4 GHz frequency band signal through the direct-through output module and outputs the 4-18 GHz frequency band (excluding 4 GHz) signal through the frequency conversion output module.

[0026] The 4-18 GHz RF signal enters the conversion channel: the LO1 input is tripled to generate a 72-82 GHz LO1, and the 4 GHz instantaneous bandwidth RF input in the 4-18 GHz range is up-converted to a 64-68 GHz IF1 after the first mixing. After filtering and amplification of the IF1 signal, a second mixing is performed, where the LO2 input is tripled to generate a 58.8 GHz LO2, which is mixed with IF1 to produce the final IF output of 5.2-9.2 GHz. Internally, the module uses HTCC technology to achieve 11 layers of alumina dielectric stacked (0.1 mm per layer), with an overall size of 40 mm × 26 mm × 2.1 mm, a size reduction of over 60% compared to the receiver front-end implemented using PCB technology. A cavity is provided on the module surface for conductive bonding of the MMIC bare chip, enabling monolithic integration of the RF front-end. A soldered Kovar alloy package provides isolation and shielding to suppress environmental interference, crosstalk, and self-oscillation. BGA pads are located on the bottom of the module for heat dissipation and electrical interconnection with the PCB. The module's wiring architecture adopts a layered isolation design: DC power is distributed through metallized vias and gold wire bonding on the 6th dielectric layer; RF signals are transmitted through three optimized paths: microstrip-stripline structure (spanning the 4th dielectric layer), SIW transmission line (utilizing the 8th / 11th metal ground layer and vias on layers 9-11), and PCB-SiP vertical interconnect (achieving cross-board transmission through BGA balls and vias).

[0027] To achieve low-loss, wideband, long-distance transmission under high wiring density and minimize inter-transmission line interference, this invention designs surface and inter-layer interconnect structures based on impedance / mode matching methods and parity-mode constraint principles.

[0028] Surface-layer multi-functional transmission lines: For three high-frequency signal paths—LO1 (72–82 GHz), first intermediate frequency (64–68 GHz), and LO2 (58.8 GHz)—integrated transmission lines based on SIW structures were designed, combining bandpass filtering and signal transmission capabilities. To accommodate the space constraints of the die layout within the SiP module, a 90° folded SIW structure was introduced at the filter output, and impedance matching was achieved by placing metallized vias in the bending area, effectively suppressing signal reflection. This design ultimately achieves low-loss transmission and high-selectivity filtering of high-frequency signals, ensuring the system's high-frequency signal processing requirements are met while maintaining compact integration.

[0029] Low-loss vertical interconnect structure between layers: To address the interconnection requirements between different layers, an ultra-wideband vertical interconnect structure between layers was designed. In this vertical interconnect structure, the long metal vias used for signal transmission are equivalent to a series of inductors, which introduce significant parasitic inductance. To suppress this effect, this design employs three capacitance compensation methods to offset it: (1) Adding matching pads at the signal vias to neutralize part of the inductance using the matching capacitance formed by the pads and the surrounding ground shield vias; (2) Increasing the inherent capacitance between the vias by reducing the spacing between the signal vias and adjacent ground shield vias, and further enhancing the compensation by utilizing the corner capacitance between the signal vias and the ground layer; (3) Enlarging the area of ​​the matching pads at the vertical transition between the microstrip line and the signal vias to increase the capacitance between the pads and the ground layer, thereby maximizing the offsetting of parasitic inductance. Through the above methods, low-loss, wideband, long-distance interlayer signal transmission was finally achieved, realizing a multi-level low-loss (<1.5 dB) interconnect system.

[0030] The present invention has the following beneficial effects:

[0031] First, high integration and miniaturization. By adopting HTCC technology and SiP three-dimensional integration scheme, high-density heterogeneous integration of complex multi-chip RF links is achieved, and the size is significantly reduced compared to traditional PCB solutions.

[0032] Second, ultra-wideband and high instantaneous bandwidth. Operating frequency covers 2-18 GHz, with an instantaneous bandwidth reaching 4 GHz, meeting the requirements of modern broadband communication systems.

[0033] Third, excellent spurious suppression performance. Through the use of a high local oscillator dual-frequency conversion architecture and a dual-balanced mixer, spurious suppression exceeds 50 dBc, ensuring signal quality.

[0034] Fourth, low-loss transmission. The innovative surface SIW filter transmission line and interlayer vertical interconnect structure ensure low loss (<1.5 dB) and high fidelity signal transmission within the module and between the module and the PCB.

[0035] Fifth, high reliability. The HTCC substrate has good thermal stability and mechanical strength, and the Kovar alloy shielding effectively suppresses electromagnetic interference, improving the reliability of the module in complex environments. Attached Figure Description

[0036] Figure 1 This is a block diagram of the RF receiver front-end system circuit architecture.

[0037] Figure 2 This is a schematic diagram of the layered structure of the 2-18 GHz radio frequency receiver front-end SiP module in the embodiment.

[0038] Figure 3 This illustrates the surface cavity layout and key component integration locations of the 2-18 GHz radio frequency receiver front-end SiP module in this embodiment.

[0039] Figure 4 The diagram shows the structural layout and simulation response curves of the 72–82 GHz embedded SIW filter in the embodiment.

[0040] Figure 5 The diagram shows the structural layout and simulation response curves of the 58.8 GHz embedded SIW filter in the embodiment.

[0041] Figure 6 The diagram shows the structural layout and simulation response curves of the 64–68 GHz embedded SIW filter in the embodiment.

[0042] Figure 7 This is a schematic diagram and schematic diagram of a structure that uses capacitor compensation to cancel out inductance.

[0043] Figure 8 The actual model of the microstrip-stripline-microstrip vertical interconnection structure in this embodiment, along with simulation and measurement results, are presented.

[0044] Table 1 shows the measured frequency response and dynamic performance curves of the RF receiver front end, including noise figure and spurious rejection level, which intuitively verifies the overall performance of the module in the 2–18 GHz band. Detailed Implementation

[0045] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.

[0046] To facilitate a thorough understanding of the technical solutions of this invention by those skilled in the art, specific embodiments of this invention will now be described in detail with reference to the accompanying drawings. It should be particularly noted that the following embodiments are merely illustrative of the technical principles and implementation methods of this invention and do not constitute any limitation on the scope of protection of this invention. Based on the fundamental principles of this invention, any equivalent modifications or improvements made by those skilled in the art without creative effort should be included within the scope of protection of this invention. In the specific description, to avoid redundant descriptions of common knowledge affecting the understanding of the core technology of this invention, some conventional technical details will be appropriately omitted.

[0047] The accompanying drawings of this invention illustrate relevant structural diagrams. It should be noted that the drawings are not strictly to scale; some details have been appropriately enlarged for clarity, and some non-critical details may be simplified. The functional areas, structural layers, and their relative dimensions and positional relationships shown in the drawings are for illustrative purposes only, and reasonable deviations may exist in actual implementation due to process tolerances or technical limitations. Those skilled in the art can adaptively adjust the shape, size, and spatial layout of the illustrated structures according to specific application requirements; all such reasonable modifications should fall within the protection scope of this invention.

[0048] This invention provides a high-density system-in-package (SiP) module for ultra-wideband radio frequency receiving applications in the 2-18 GHz range, implemented using HTCC technology.

[0049] like Figure 1 As shown, the RF receiver front end includes an RF signal pre-processing module, a single-pole double-throw switch, a direct-output module, a frequency conversion output module, a first-stage local oscillator signal generation module, and a second-stage local oscillator signal generation module.

[0050] The radio frequency signal pre-processing module includes a limiter, a first low-noise amplifier, a first bandpass filter, a first attenuator, a second low-noise amplifier, and a second attenuator connected in series. It is used to preprocess the 2-18 GHz input radio frequency signal and input it to the subsequent module through a single-pole double-throw switch.

[0051] The switch, based on the frequency band of the input radio frequency signal, inputs radio frequency signals of 4 GHz and below to the direct output module, and inputs radio frequency signals above 4 GHz to the frequency conversion output module.

[0052] The first-stage local oscillator signal generation module includes a third low-noise amplifier, a first frequency multiplier, a first SIW bandpass filter, and a fourth low-noise amplifier connected in series. After the 24-27.3333GHz LO1 signal is input into the first-stage local oscillator signal generation module, it undergoes amplification, frequency tripleting, filtering, and secondary amplification in sequence to generate a 72-82GHz first-stage high-frequency local oscillator signal, which is then input to the frequency conversion output module.

[0053] The second-stage local oscillator signal generation module includes a sixth low-noise amplifier, a second frequency multiplier, and a third SIW bandpass filter connected in series. After the 19.6GHz LO2 signal is input into the second-stage local oscillator signal generation module, it is amplified, tripled, and filtered in sequence to generate a 58.8GHz second-stage high-frequency local oscillator signal, which is then input to the frequency conversion output module.

[0054] The pass-through output module includes a second bandpass filter, which is used to filter and pass-through the input RF signals of 4 GHz and below.

[0055] The frequency conversion output module includes, in series, a first mixer, a second SIW bandpass filter, a fifth low-noise amplifier, a second mixer, a first high-pass filter, a seventh low-noise amplifier, a second high-pass filter, an eighth low-noise amplifier, a low-pass filter, a π-type attenuator, and a third high-pass filter. The 4 GHz instantaneous bandwidth radio frequency signal (4-18 GHz) and the first-stage high-frequency local oscillator signal are first mixed in the first mixer, up-converted to an IF1 signal of 64-68 GHz. The IF1 signal, after filtering and amplification, enters the second mixer and is mixed a second time with the second-stage high-frequency local oscillator signal, up-converted to an IF2 signal of 5.2-9.2 GHz. The IF2 signal, after filtering and amplification, yields the final intermediate frequency output signal.

[0056] In this embodiment, the RF receiving front-end adopts a double-conversion superheterodyne receiver architecture. Through high local oscillator dual-frequency conversion, the mirror frequency is moved away from the RF signal spectrum, and spurious components generated by mixing are shifted to a higher frequency region outside the intermediate frequency (IF) passband. This architecture has a first-stage LO frequency in the 72-82 GHz range and a second-stage LO frequency of 58.8 GHz, achieving an instantaneous bandwidth of 4 GHz within an ultra-wide operating bandwidth of 2-18 GHz, with spurious suppression exceeding 50 dBc. Within the 2-4 GHz frequency range (inclusive), the second harmonic of 2 GHz lies within the passband and is difficult to filter out. Therefore, to meet the requirements of 4 GHz instantaneous bandwidth and high spurious suppression, a direct-through link outputs signals in the 2-4 GHz band, while a frequency-conversion link outputs signals in the 4-18 GHz band (excluding 4 GHz).

[0057] For the aforementioned RF receiver front-end, this embodiment uses a SIP module for encapsulation and implementation; such as Figures 2-3 As shown, the module internally employs HTCC technology to achieve 11 layers of alumina dielectric stacked (0.1 mm per layer), with overall dimensions of 40 mm × 26 mm × 2.1 mm. Compared to the receiver front-end implemented using PCB technology, the size is reduced by more than 60%. A cavity is provided on the module surface for conductive bonding of the bare MMIC chip, enabling monolithic integration of the RF front-end. A soldered Kovar alloy package provides isolation and shielding, suppressing environmental interference, crosstalk, and self-oscillation. BGA solder balls are located on the bottom of the module for heat dissipation and electrical interconnection with the PCB.

[0058] The SiP module's wiring architecture employs a layered isolation design: DC power is distributed through metallized vias and gold wire bonding on the 6th dielectric layer. RF signals are transmitted via three optimized paths: microstrip-stripline structure (spanning the 4th dielectric layer), SIW transmission lines (utilizing the 8th / 11th metal ground layers and metal vias on layers 9-11), and PCB-SiP vertical interconnects (achieving cross-board transmission via BGA balls and vias).

[0059] To further achieve low-loss, wideband, long-distance transmission under high wiring density and minimize inter-transmission line interference, this embodiment optimizes the design of the surface layer and inter-layer interconnect structure based on impedance / mode matching method and parity mode constraint principle.

[0060] Surface-layer multi-functional transmission lines: For the three high-frequency signal paths LO1 (72–82 GHz), first intermediate frequency (64–68 GHz), and LO2 (58.8 GHz), integrated transmission lines based on SIW structures, combining bandpass filtering and signal transmission capabilities, were designed. To accommodate the space constraints of the die layout within the SiP module, a 90° folded SIW filter structure was introduced at the filter output, such as... Figures 4-6 As shown, impedance matching is achieved by arranging metallized vias in the bending region, effectively suppressing signal reflection. This design ultimately achieves low-loss transmission and high-selectivity filtering of high-frequency signals, ensuring the system's high-frequency signal processing requirements are met while maintaining compact integration.

[0061] Low-loss vertical interconnect structure between layers: To address the interconnection requirements between different layers, a microstrip-stripline-microstrip ultra-wideband vertical interconnect structure was designed. In this vertical interconnect structure, the signal vias used for signal transmission are equivalent to a series of inductors, which introduce significant parasitic inductance. To suppress this effect, three capacitance compensation methods are used to offset it: (1) adding a matching pad in the middle of the signal via, utilizing the matching capacitance formed by the matching pad and the surrounding ground shield vias; (2) reducing the spacing between the signal via and the adjacent ground shield via to increase the inherent capacitance between the two types of vias; (3) increasing the pad area at the connection between the microstrip line and the signal via to increase the capacitance between the pad and the ground layer. Through the above methods, low-loss, wideband, long-distance interlayer signal transmission was finally achieved, realizing a multi-level low-loss (<1.5 dB) interconnect system.

[0062] Furthermore, all mixers in this embodiment are double-balanced mixers. Utilizing their symmetrical cancellation characteristics, they generate only one-quarter of the spurious components of a single-balanced mixer, effectively suppressing all spurious components generated by the combination of even harmonics of RF and LO signals.

[0063] The structure in the embodiment was simulated and calculated using the commercial finite element electromagnetic simulation software ANSYS Electronics 2021R1.

[0064] refer to Figure 4 The horizontal axis represents frequency, and the vertical axis represents S-parameters. As shown in the simulation results, the filter operates at a frequency of 72 GHz-82 GHz, and the maximum insertion loss is 2.1 dB. This is due to the parasitic inductance effect of the gold wire bonding of the bare die in the high-frequency band. At the same time, the in-band ripple is less than 1.1 dB, which can ensure the efficient transmission of the target frequency band signal.

[0065] refer to Figure 5 As shown in the simulation results, the filter operates at a frequency of 58.8 GHz with an insertion loss of 2.5 dB. The local oscillator 2 signal input to the SiP module is 19.6 GHz, which is multiplied by 3 to obtain a local oscillator 2 frequency of 58.8 GHz. The frequency multiplier generates the 2nd and 4th harmonics at the input frequency of 19.6 GHz. The filter exhibits a suppression degree greater than 51 dBc for the 2nd harmonic at 39.2 GHz, and the frequency multiplier itself also provides a suppression degree of 40 dBc for the 2nd harmonic, thus meeting the suppression requirements. Similarly, the filter exhibits a suppression degree greater than 56 dBc for the 4th harmonic at 78.4 GHz, and the frequency multiplier itself provides a suppression degree of 30 dBc for the 4th harmonic, also meeting the suppression requirements for the 4th harmonic.

[0066] refer to Figure 6As shown in the simulation results, the filter operates at a frequency of 64-68 GHz with an insertion loss of 3.7 dB and an in-band ripple of less than 1.0 dB, ensuring efficient transmission of signals in the target frequency band. The filter's suppression efficiency in the first-stage local oscillator range is greater than 40 dBc, which satisfies the requirement for suppressing leakage from the first-stage local oscillator.

[0067] Based on the above design model, a radio frequency receiver front-end SiP module and a vertical interconnect structure were fabricated, and the fabricated finished product was tested.

[0068] The top and side views of the finished vertical interconnect structure in this embodiment are as follows: Figure 8 (a) Figure 8 As shown in (b), the simulation results are as follows: Figure 8 As shown in (c), its insertion loss is less than 0.5 dB and return loss is greater than 15 dB in the 2-18 GHz operating frequency range. Actual test results are shown in the figure. Figure 8 As shown in (d), the test curve and the simulation curve have a high degree of agreement. The measured insertion loss is less than 2.5 dB (including 2 dB loss introduced by the RF connector during the test), and the measured return loss is greater than 12 dB. This indicates that the vertical interconnect structure can meet the requirements of vertical interconnection between bare chips and PCB motherboard in the SiP module of this solution.

[0069] The measured results of the RF receiver front-end SiP module in this embodiment are shown in Table 1, which displays the measured frequency response and dynamic performance curves of the RF receiver front-end, including noise figure and spurious suppression level, and intuitively verifies the overall performance of the module in the 2–18 GHz frequency band.

[0070] Table 1

[0071] Parameter Technical specification Theoretical value Measured value RF input (pass-through) 2-4 GHz 2-4 GHz 2-4 GHz RF input (frequency conversion) 4-18 GHz 4-18 GHz 4-18 GHz IF output (pass-through) 2-4 GHz 2-4 GHz 2-4 GHz IF output (frequency conversion) 7.2 GHz 7.2 GHz 7.2 GHz Instantaneous bandwidth ≥ 4 GHz 4.2 GHz 4.2 GHz In-band ripple ≤ 5 dB ≤ 3 dB ≤ 4.9 dB Gain 30 ± 5 dB 35 dB 29.2 dB Noise figure ≤ 5 dB 4.46 dB 4.86 dB Spurious rejection ≥ 50 dBc ≥ 50 dBc 51.12 dB

[0072] Referring to Table 1, the actual test results of this SiP module meet the design goals. It has two operating modes: pass-through 2-4 GHz and frequency conversion 5.2-9.2 GHz. At the same time, the instantaneous bandwidth reaches 4.2 GHz, the in-band ripple is less than or equal to 4.9 dB, the overall link gain reaches 29.2 dB, the noise figure is less than 4.86 dB across the entire frequency band, and the spurious suppression is less than 51.12 dB across the entire frequency band.

[0073] In summary, this invention presents a 2–18 GHz ultra-wideband RF receiver front-end system-in-package (SiP) module based on high-temperature co-fired ceramic (HTCC) technology. This module integrates a three-dimensional vertical interconnect structure, a multi-functional filter transmission line, and a double-conversion superheterodyne architecture, achieving miniaturization (40 mm × 26 mm × 2.1 mm, more than 60% smaller than PCB solutions), wide bandwidth (2–18 GHz operating bandwidth, 4 GHz instantaneous bandwidth), high spurious rejection (>50 dBc), and low transmission loss (<1.5 dB). This significantly improves the system's integration, stability, and anti-interference capabilities, providing key technical support for the miniaturization and high reliability applications of 5G / 6G communication, radar, and satellite systems.

[0074] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A small high-integration radio frequency receiving front-end SiP module based on HTCC, characterized in that, The radio frequency receiving front end is realized by the SiP module based on the HTCC, and the radio frequency receiving front end removes the image frequency far from the radio frequency signal spectrum by the high local oscillator double-frequency conversion mode, and moves the spurious components generated by the frequency conversion to the high-frequency region outside the intermediate frequency passband, so that the wide instantaneous bandwidth and high spurious suppression are realized.

2. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 1, characterized in that, The radio frequency receiving front end comprises a radio frequency signal pre-processing module, a switch, a straight-through output module, a frequency conversion output module, a first local oscillator signal generation module and a second local oscillator signal generation module. The radio frequency signal pre-processing module is used for pre-processing the wide-band input radio frequency signal and inputting the radio frequency signal to the subsequent module through the switch. The switch inputs the radio frequency signal of 4 GHz and below 4 GHz to the straight-through output module and inputs the radio frequency signal above 4 GHz to the frequency conversion output module based on the frequency band of the input radio frequency signal. The first local oscillator signal generation module is used for generating the first high-frequency local oscillator signal and inputting the first high-frequency local oscillator signal to the frequency conversion output module. The second local oscillator signal generation module is used for generating the second high-frequency local oscillator signal and inputting the second high-frequency local oscillator signal to the frequency conversion output module. The straight-through output module directly outputs the input radio frequency signal of 4 GHz and below 4 GHz. The frequency conversion output module performs secondary frequency conversion on the radio frequency signal above 4 GHz based on the first high-frequency local oscillator signal and the second high-frequency local oscillator signal, converts the radio frequency signal into an intermediate frequency signal and outputs the intermediate frequency signal.

3. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 2, characterized in that, The input signal of the first local oscillator signal generation module is an LO1 signal, and the LO1 signal generates the first high-frequency local oscillator signal after sequentially passing through once amplification, three times frequency conversion, filtering and twice amplification. The input signal of the second local oscillator signal generation module is an LO2 signal, and the LO2 signal generates the second high-frequency local oscillator signal after sequentially passing through once amplification, three times frequency conversion and filtering. The radio frequency signal above 4 GHz is first frequency-converted into an IF1 signal by the first high-frequency local oscillator signal, the IF1 signal is second frequency-converted into an IF2 signal by the second high-frequency local oscillator signal after filtering and amplification, and the IF2 signal is filtered and amplified to obtain the final output intermediate frequency output signal.

4. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 3, characterized in that, The filters in the first local oscillator signal generation module and the second local oscillator signal generation module are SIW filters, and the first filter through which the IF1 signal passes in the frequency conversion output module is an SIW filter.

5. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 4, characterized in that, The SiP module is electrically interconnected with the PCB through BGA solder balls.

6. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 4 or 5, characterized in that, The wiring architecture of the SiP module adopts a microstrip-strip line-microstrip vertical interconnection structure, realizes layered isolation layout, reduces signal interference and improves layout density.

7. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 6, characterized in that, In the microstrip-strip line-microstrip vertical interconnection structure, the microstrip and the strip line between different layers are interconnected through signal vias; the signal vias are equivalent to a plurality of series inductors, and the inductors are offset by using a capacitance compensation method: (1) a matching pad is additionally arranged in the middle of the signal via, and a matching capacitor is formed by the matching pad and surrounding ground shielding vias; (2) the spacing between the signal via and the adjacent ground shielding via is reduced to increase the inherent capacitance between the two kinds of vias; and (3) the pad area at the connection between the microstrip line and the signal via is expanded to increase the capacitance between the pad and the ground layer.

8. A small high-integration radio frequency receive front-end SiP module based on HTCC according to claim 7, characterized in that, The mixers in the radio frequency receiving front end are all double-balanced mixers.

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